JP5930158B2 - Solid-state imaging device, control method for solid-state imaging device, and imaging device - Google Patents

Description

  The present invention relates to a solid-state imaging device, a control method for a solid-state imaging device, and an imaging device.

  In recent years, imaging devices such as video cameras and electronic still cameras have been widely used. For these imaging devices (hereinafter referred to as “cameras”), CCD (Charge Coupled Device) type solid-state imaging devices and amplification type solid-state imaging devices are used. In the amplification type solid-state imaging device, a plurality of pixels are arranged in a matrix. In the amplification type solid-state imaging device, the signal charges generated and accumulated in the photoelectric conversion unit which is the light receiving unit of each pixel are guided to the amplification unit provided in the pixel, and the signal amplified by the amplification unit is converted into the pixel. Output as an output signal.

  As the amplification type solid-state imaging device, for example, a solid-state imaging device using a junction field effect transistor in an amplification unit, or a CMOS type using a CMOS (Complementary Metal Oxide Semiconductor: complementary metal oxide semiconductor) transistor in an amplification unit. There are solid-state imaging devices.

  Conventionally, in a general CMOS type solid-state imaging device (hereinafter also referred to as “solid-state imaging device”), signal charges generated and accumulated by photoelectric conversion units of pixels arranged in a two-dimensional matrix are stored. A method of reading sequentially for each row is employed. In the case of this readout method, the exposure timing in the photoelectric conversion unit of each pixel is determined by the start and end of signal charge readout, and the exposure timing differs for each pixel row. For this reason, if a fast-moving subject is imaged using such a CMOS solid-state imaging device, the subject may be distorted and imaged.

  As an exposure method for eliminating the distortion of the subject, a simultaneous imaging function (hereinafter referred to as “global shutter function”) that realizes simultaneous generation of signal charges and accumulation by exposing all pixels at the same timing. Has been proposed. And the use of the CMOS type solid-state imaging device having a global shutter function is increasing.

  In a CMOS type solid-state imaging device having a global shutter function, it is usually necessary to store the signal charge generated by the photoelectric conversion unit until the reading is completed. Necessary. In a CMOS type solid-state imaging device having a conventional global shutter function, after all pixels are exposed simultaneously, the signal charges generated by each photoelectric conversion unit are transferred to each storage capacitor unit at the same time and stored temporarily. In addition, the signal charges stored in the storage capacitor unit are sequentially converted into pixel signals at a predetermined readout timing.

  However, in the conventional CMOS type solid-state imaging device having a global shutter function, the photoelectric conversion unit and the storage capacitor unit must be arranged on the same plane of the substrate, and an increase in the chip area of the solid-state imaging device is avoided. I can't. Furthermore, there is a problem in that the signal quality is deteriorated due to light or noise caused by leakage of the storage capacitor unit during a standby period until the signal charge stored in the storage capacitor unit is read.

  As a technique for solving such a problem, for example, as in Patent Document 1, a first substrate on which a photoelectric conversion unit is formed and a second substrate on which a plurality of MOS transistors are formed are separately provided. A method for preventing an increase in the chip area (mounting area) of the solid-state imaging device is disclosed by bonding these substrates together to form a single solid-state imaging device. In the technique disclosed in Patent Document 1, a first substrate and a second substrate that are separately manufactured are electrically connected by a connection electrode.

  Further, unlike the CCD solid-state imaging device, the CMOS solid-state imaging device can be driven by a single power source. In addition, while a CCD type solid-state imaging device requires a dedicated manufacturing process, a CMOS type solid-state imaging device can be manufactured using the same manufacturing process as other LSIs, and therefore, SOC (System On Chip). Is easy to deal with. For this reason, a CMOS type solid-state image pickup device has been proposed in which a signal processing circuit is mounted on the solid-state image pickup device to realize multi-function.

  As a CMOS-type solid-state imaging device that realizes multi-functions, for example, Patent Document 2 discloses a CMOS-type solid-state imaging device in which an AD converter that performs analog-digital conversion is mounted as a signal processing circuit. In the CMOS type solid-state imaging device disclosed in Patent Document 2, an AD converter is mounted for each pixel column.

JP 2010-219339 A JP 2005-323331 A

  In the technique disclosed in Patent Document 1, a conventional pixel having a global shutter function is divided into two substrates. For this reason, an increase in the chip area of the first substrate can be avoided. In addition, by adopting a configuration in which the first substrate and the second substrate are bonded to each other, deterioration of signal quality due to noise due to light during a standby period until the signal charge accumulated in the storage capacitor portion is read is avoided. be able to.

  FIG. 8 is a schematic view showing a connection configuration of a substrate of a conventional solid-state imaging device to which the technique disclosed in Patent Document 1 is applied and the signal processing circuit disclosed in Patent Document 2 is mounted. 8A shows a side view of the connection configuration of the first substrate and the second substrate of the solid-state imaging device 800, and FIG. 8B shows the first substrate and the first substrate of the solid-state imaging device 800. The top view of the connection structure of 2 board | substrates is shown.

  As shown in FIG. 8A, in the solid-state imaging device 800, the pixel unit 11 formed on the first substrate and the pixel unit 12 formed on the second substrate are connected via the inter-substrate connection unit 13. Connected. More specifically, a photoelectric conversion unit is formed in the pixel unit 11, and a storage capacitor unit is formed in the pixel unit 12. Further, in the inter-substrate connection unit 13, for example, the photoelectric conversion unit of the pixel unit 11 and the storage capacitor unit of the pixel unit 12 are connected by a bump. Thus, in the solid-state imaging device 800, the region of the pixel array unit 40 of the solid-state imaging device 800 is formed in a stacked configuration by the configuration of the pixel unit 11 and the pixel unit 12 connected via the bumps.

  By the way, in order to accurately output the pixel signal read from each pixel arranged in the solid-state imaging device, it is necessary to perform signal processing such as noise removal by each signal processing circuit. However, Patent Document 1 does not disclose a technique or a specific example of a configuration for signal processing. That is, from Patent Literature 1, a pixel signal obtained by amplifying a signal charge generated by a photoelectric conversion unit of a pixel unit is read out to a signal processing circuit, and a specific configuration for performing signal processing in the signal processing circuit is derived. I can't.

  Therefore, suppose a case where a readout circuit for reading out pixel signals is provided in the second substrate as in the solid-state imaging device 800 shown in FIG. In the solid-state imaging device 800, signal holding that forms a storage capacitor unit that stores signal charges generated by the photoelectric conversion unit of the pixel unit 11 in a region of the second substrate corresponding to the region of the pixel unit 11 of the first substrate. And a readout circuit around the solid-state imaging device 800 (solid-state imaging device control signal generation circuit 10, vertical readout control circuit 20, horizontal readout control circuit 30, column signal processing circuit 60, output circuit shown in FIG. 80) is formed in the second substrate. In this way, as can be seen from FIG. 8, the chip area of the second substrate in the solid-state imaging device 800 is significantly larger than that of the first substrate.

  Thereby, in the technique disclosed in Patent Document 1, the chip area of the solid-state imaging device 800 after connecting the first substrate and the second substrate is as large as the second substrate, and the solid-state imaging is performed. There is a problem that the mounting area of the device 800 cannot be significantly smaller than the mounting area of a solid-state imaging device manufactured with one substrate.

  In recent years, there have been an increasing number of examples of signal processing circuits such as AD converters (column signal processing circuit 60 shown in FIG. 8) mounted for each pixel column that are more multifunctional or faster. The circuit area of the circuit is also increasing. For this reason, in the configuration as described above, the difference in chip area between the first substrate and the second substrate is further increased.

  In addition, as a method of bonding the first substrate and the second substrate, after the respective semiconductor manufacturing steps are completed, the wafer that has generated the first substrate and the wafer that has generated the second substrate are bonded to the wafer. There are methods such as pasting in a state. In this case, since the dicing is performed after the wafer that has generated the first substrate and the wafer that has generated the second substrate are bonded together, the chip areas of the first substrate and the second substrate are the same. Become an area. For this reason, as described above, when there is a difference in chip area between the first substrate and the second substrate, a region in which no circuit is formed (hereinafter referred to as an “adjustment region”) is formed on any substrate. Occurs, leading to an increase in the chip area of the solid-state imaging device. For example, in the solid-state imaging device 800 shown in FIG. 8, since the chip area of the first substrate is the same as the chip area of the second substrate, an extra adjustment region is generated on the first substrate, and the solid state The chip area of the imaging apparatus 800 increases. For this reason, in the solid-state imaging device to which the technique disclosed in Patent Document 1 is applied, there is a problem that the chip cost is increased.

  The present invention has been made on the basis of the above-described problem recognition, and in a solid-state imaging device configured by connecting a plurality of chips, the difference in size of each chip on which the solid-state imaging device is formed is determined. An object of the present invention is to provide a solid-state imaging device, a control method for the solid-state imaging device, and an imaging device capable of reducing the chip area (mounting area) of the solid-state imaging device and reducing the cost by reducing the number. .

  In order to solve the above problems, a solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, A photoelectric conversion element that is disposed on one substrate and generates a signal corresponding to the amount of incident light; and a signal that is disposed on the second substrate corresponding to the photoelectric conversion element and that is generated by the corresponding photoelectric conversion element, A readout circuit that reads out via the corresponding connection unit and outputs an analog readout signal, a pixel unit in which a plurality of pixels are arranged, and a circuit element that performs signal processing on the readout signal A signal processing circuit, and the signal processing circuit is a reference for classifying the circuit elements constituting the signal processing circuit into the first substrate side or the second substrate side. Based on Each circuit element is divided into a first signal processing circuit or a second signal processing circuit, the circuit elements divided into the first signal processing circuits are arranged in the first substrate, and The circuit element divided into two signal processing circuits is arranged in the second substrate.

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connecting portion, and are disposed on the first substrate. A photoelectric conversion element that generates a signal in accordance with the amount of incident light, and a signal corresponding to the photoelectric conversion element that is arranged on the second substrate in correspondence with the photoelectric conversion element. A pixel circuit that includes a readout circuit that reads out and outputs as an analog readout signal, and performs signal processing on the readout signal and a digital signal corresponding to the readout signal A signal processing circuit for converting the signal processing circuit to a first signal processing circuit disposed on the first substrate and performing analog signal processing on the read signal; and the second substrate. Arrangement It is, and a second signal processing circuit for performing digital signal processing on the analog signal processed read signal by the first signal processing circuit.

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connecting portion, and are disposed on the first substrate. A photoelectric conversion element that generates a signal in accordance with the amount of incident light, and a signal that is arranged on the second substrate corresponding to the photoelectric conversion element and that is generated by the corresponding photoelectric conversion element. A readout circuit that reads out and outputs as an analog readout signal, a pixel section in which a plurality of pixels are arranged, and a signal processing circuit that performs signal processing on the readout signal, and the signal A processing circuit is disposed on the first substrate and is driven by a power supply voltage higher than a predetermined reference value, and a power supply disposed on the second substrate and lower than the predetermined reference value Driven by voltage Comprising a signal processing circuit.

  A control method for a solid-state imaging device according to an aspect of the present invention is a control method for a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, A signal generated according to the amount of incident light by the photoelectric conversion element arranged on one substrate is read out via the connection unit by a reading circuit arranged on the second substrate corresponding to the photoelectric conversion element. Each of the circuit elements is a first signal processing circuit or a read step for outputting as an analog read signal, and a classification criterion which is a criterion for classification to the first substrate side or the second substrate side. The circuit element divided into the second signal processing circuit, the circuit element divided into the first signal processing circuit is arranged in the first substrate, and the circuit element divided into the second signal processing circuit is the second signal processing circuit. Base of The arranged signal processing circuit within, including a signal processing step for performing the signal processing on the read signal.

  A control method for a solid-state imaging device according to an aspect of the present invention is a control method for a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, A signal generated according to the amount of incident light by the photoelectric conversion element arranged on one substrate is read out via the connection unit by a reading circuit arranged on the second substrate corresponding to the photoelectric conversion element. A read step for outputting as an analog read signal; a first signal processing circuit for performing analog signal processing on the read signal disposed on the first substrate; and the first signal disposed on the second substrate. A signal processing circuit comprising: a second signal processing circuit that performs digital signal processing on the read signal that has been subjected to analog signal processing by the one signal processing circuit; Processing to perform the, including a signal processing step of converting into a digital signal corresponding to the read signal.

  A control method for a solid-state imaging device according to an aspect of the present invention is a control method for a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, A signal generated according to the amount of incident light by the photoelectric conversion element arranged on one substrate is read out via the connection unit by a reading circuit arranged on the second substrate corresponding to the photoelectric conversion element. A read step for outputting as an analog read signal; a first signal processing circuit driven at a power supply voltage higher than a predetermined reference value disposed on the first substrate; and the second substrate disposed on the second substrate. A signal processing step of performing signal processing on the read signal by a signal processing circuit including a second signal processing circuit driven by a power supply voltage lower than a predetermined reference value.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection portion, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion element that generates a signal corresponding to the amount of light, and a signal generated on the second substrate corresponding to the photoelectric conversion element and generated by the corresponding photoelectric conversion element via the corresponding connection portion A readout circuit that reads out and outputs as an analog readout signal, a pixel portion in which a plurality of pixels are arranged, and a signal processing circuit that includes a circuit element that performs signal processing on the readout signal. The signal processing circuit is configured so that each circuit element constituting the signal processing circuit is based on a division criterion that is a criterion for dividing the circuit element into the first substrate side or the second substrate side. element The circuit element divided into the first signal processing circuit or the second signal processing circuit, the circuit element divided into the first signal processing circuit is arranged in the first substrate, and divided into the second signal processing circuit The circuit element is disposed in the second substrate.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection portion, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion element that generates a signal corresponding to the amount of light, and a signal generated on the second substrate corresponding to the photoelectric conversion element, and generated by the corresponding photoelectric conversion element, via the corresponding connection portion Read out and outputs as an analog read signal, a pixel unit having a plurality of pixels, and performs signal processing on the read signal and converts it into a digital signal corresponding to the read signal A signal processing circuit for performing analog signal processing on the read signal, and the signal processing circuit disposed on the second substrate. , The serial first signal processing circuit comprises a second signal processing circuit for performing digital signal processing on the analog signal processed read signal.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection portion, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion element that generates a signal corresponding to the amount of light, and a signal generated on the second substrate corresponding to the photoelectric conversion element and generated by the corresponding photoelectric conversion element via the corresponding connection portion A readout circuit that reads out and outputs as an analog readout signal. The signal processing circuit includes: a pixel portion in which a plurality of pixels are arranged; and a signal processing circuit that performs signal processing on the readout signal. Are arranged on the first substrate and driven with a power supply voltage higher than a predetermined reference value, and are arranged on the second substrate with a power supply voltage lower than the predetermined reference value. Second signal processing to drive And a circuit.

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connecting portion, and are disposed on the first substrate. A photoelectric conversion element that generates a signal in accordance with the amount of incident light, and a signal corresponding to the photoelectric conversion element that is arranged on the second substrate in correspondence with the photoelectric conversion element. A pixel portion including a plurality of readout transistors that are received by one of the source and the drain and output as an analog readout signal from the other of the source and the drain; and a signal for the readout signal A signal processing circuit including a circuit element that performs processing, and the signal processing circuit includes the circuit element constituting the signal processing circuit as the first substrate side or the second base. Each of the circuit elements is divided into a first signal processing circuit or a second signal processing circuit on the basis of a division criterion that is a reference for dividing the circuit element into the first signal processing circuit. Is arranged in the first substrate, and the circuit elements divided into the second signal processing circuits are arranged in the second substrate.

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connecting portion, and are disposed on the first substrate. A photoelectric conversion element that generates a signal in accordance with the amount of incident light, and a signal that is arranged on the second substrate corresponding to the photoelectric conversion element and that is generated by the corresponding photoelectric conversion element. A pixel portion including a plurality of readout transistors that are received by one of the source and the drain and output as an analog readout signal from the other of the source and the drain; and a signal for the readout signal A signal processing circuit that performs processing and converts the signal into a digital signal in accordance with the read signal, and the signal processing circuit is disposed on the first substrate, and is connected to the read signal. A first signal processing circuit that performs analog signal processing, and a second signal processing circuit that is disposed on the second substrate and that performs digital signal processing on a read signal that has been analog signal processed by the first signal processing circuit; .

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connecting portion, and are disposed on the first substrate. A photoelectric conversion element that generates a signal in accordance with the amount of incident light, and a signal corresponding to the photoelectric conversion element that is arranged on the second substrate in correspondence with the photoelectric conversion element. A pixel portion including a plurality of readout transistors that are received by one of the source and the drain and output as an analog readout signal from the other of the source and the drain; and a signal for the readout signal A first signal processing circuit disposed on the first substrate and driven by a power supply voltage higher than a predetermined reference value; and a second signal processing circuit that performs processing. It is disposed on the substrate, and a second signal processing circuit driven by power source voltage lower than the predetermined reference value.

  A control method for a solid-state imaging device according to an aspect of the present invention is a control method for a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, A signal generated in accordance with the amount of incident light by the photoelectric conversion element arranged on one substrate is arranged on the second substrate in correspondence with the photoelectric conversion element, and one of the source and drain via the connection portion Based on a read step for outputting as an analog read signal from the other of the source and the drain of the read transistor received by the transistor, and a classification criterion which is a criterion for classifying the first substrate side or the second substrate side, Each circuit element is divided into a first signal processing circuit or a second signal processing circuit, and the circuit elements divided into the first signal processing circuits are arranged in the first substrate. The segmented said circuit element is said second signal processing circuit disposed in the substrate to the second signal processing circuit, including a signal processing step for performing the signal processing on the read signal.

  A control method for a solid-state imaging device according to an aspect of the present invention is a control method for a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, A signal generated according to the amount of incident light by the photoelectric conversion element arranged on one substrate is arranged on the second substrate in correspondence with the photoelectric conversion element, and one of the source and the drain is connected via the connection portion. A read step for outputting as an analog read signal from the other of the source and drain of the read transistor received by the first transistor; a first signal processing circuit for performing analog signal processing on the read signal disposed on the first substrate; A second signal processing circuit that performs digital signal processing on a read signal that has been analog signal processed by the first signal processing circuit disposed on the second substrate; By a signal processing circuit having said to perform signal processing on the read signal, including a signal processing step of converting into a digital signal corresponding to the read signal.

  A control method for a solid-state imaging device according to an aspect of the present invention is a control method for a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, A signal generated according to the amount of incident light by the photoelectric conversion element arranged on one substrate is arranged on the second substrate in correspondence with the photoelectric conversion element, and one of the source and the drain is connected via the connection portion. A read step for outputting an analog read signal from the other of the source and the drain of the read transistor received by the first transistor, and a first signal processing circuit that is disposed on the first substrate and is driven with a power supply voltage higher than a predetermined reference value A signal processing circuit including a second signal processing circuit disposed on the second substrate and driven by a power supply voltage lower than the predetermined reference value. Including a signal processing step for performing the No. process, the.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection portion, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion element that generates a signal corresponding to the amount of light, and a signal generated on the second substrate corresponding to the photoelectric conversion element and generated by the corresponding photoelectric conversion element via the corresponding connection portion A pixel portion having a plurality of readout transistors that are received by one of the source and the drain and output as an analog readout signal from the other of the source and the drain, and perform signal processing on the readout signal. A signal processing circuit having a circuit element to perform, the signal processing circuit dividing the circuit element constituting the signal processing circuit into the first substrate side or the second substrate side. Each of the circuit elements is classified into a first signal processing circuit or a second signal processing circuit, and the circuit elements divided into the first signal processing circuits are classified into the first signal processing circuit, The circuit elements arranged in one substrate and divided into the second signal processing circuits are arranged in the second substrate.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection portion, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion element that generates a signal corresponding to the amount of light, and a signal generated on the second substrate corresponding to the photoelectric conversion element and generated by the corresponding photoelectric conversion element via the corresponding connection portion A pixel portion having a plurality of readout transistors that are received by one of the source and the drain and output as an analog readout signal from the other of the source and the drain, and perform signal processing on the readout signal. And a signal processing circuit that converts the read signal into a digital signal corresponding to the read signal, and the signal processing circuit is disposed on the first substrate, A first signal processing circuit that performs a signal processing, and a second signal processing circuit that is disposed on the second substrate and that performs a digital signal processing on a read signal that has been analog signal processed by the first signal processing circuit; Is provided.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection portion, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion element that generates a signal corresponding to the amount of light, and a signal generated on the second substrate corresponding to the photoelectric conversion element and generated by the corresponding photoelectric conversion element via the corresponding connection portion A pixel portion having a plurality of readout transistors that are received by one of the source and the drain and output as an analog readout signal from the other of the source and the drain, and perform signal processing on the readout signal. A first signal processing circuit disposed on the first substrate and driven by a power supply voltage higher than a predetermined reference value, and the second substrate. It is location, and a second signal processing circuit driven by power source voltage lower than the predetermined reference value.

1 is a block diagram showing a schematic configuration of a digital camera according to an embodiment of the present invention. 1 is a block diagram showing a schematic configuration of a solid-state imaging device according to a first embodiment of the present invention. FIG. 3 is a circuit diagram illustrating a schematic configuration of a unit pixel in a pixel array unit of the solid-state imaging device according to the first embodiment. FIG. 3 is a circuit diagram illustrating a schematic configuration of a column signal processing circuit in the solid-state imaging device according to the first embodiment. It is the layout figure which showed an example of arrangement | positioning to each board | substrate of each component of the solid-state imaging device of the 1st embodiment. It is the layout figure which showed another example of arrangement | positioning to each board | substrate of each component of the solid-state imaging device of the 1st embodiment. It is a circuit diagram showing a schematic structure of a column signal processing circuit in a solid-state imaging device according to a second embodiment of the present invention. It is the general | schematic figure which showed the connection structure of the board | substrate of the conventional solid-state imaging device.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. The following description includes specific details for illustrative purposes. However, those skilled in the art will understand that even if various modifications are made to the detailed contents described below, the scope of the present invention is not exceeded. Accordingly, the exemplary embodiments of the invention described below are set forth without loss of generality or limitation to the claimed invention. .

  FIG. 1 is a block diagram illustrating a schematic configuration of a digital camera (for example, a digital single lens reflex camera system) according to the present embodiment. Each component shown here can be realized in terms of hardware by elements such as a CPU and a memory of a computer, and in terms of software, it can be realized by a computer program. These are shown as functional blocks realized by these linkages. Therefore, those skilled in the art will understand that these functional blocks can be realized in various forms by a combination of hardware and software.

  A digital camera 7 shown in FIG. 1 includes a lens unit 2, a solid-state imaging device 1, an image signal processing device 3, a recording device 4, a camera control device 5, and a display device 6. The digital camera 7 shown in FIG. 1 is a digital camera that does not have a mechanical shutter for shielding the solid-state imaging device 1 and performs global exposure that exposes all pixels simultaneously.

The lens unit 2 is driven and controlled by the camera control device 5 such as zoom, focus, and diaphragm, and forms a subject image on the solid-state imaging device 1.
The solid-state imaging device 1 is a MOS solid-state imaging device that is driven and controlled by the camera control device 5 and converts subject light incident on the solid-state imaging device 1 via the lens unit 2 into an image signal. A detailed description of the solid-state imaging device 1 will be described later.

The image signal processing device 3 performs processing such as signal amplification, conversion into image data, various corrections, and image data compression on the image signal output from the solid-state imaging device 1. The image signal processing device 3 uses a memory (not shown) as temporary storage means for image data in each process.
The recording device 4 is a detachable recording medium such as a semiconductor memory, and records or reads image data.
The display device 6 is a display device such as a liquid crystal that displays an image based on image data imaged on the solid-state imaging device 1 and processed by the image signal processing device 3 or image data read from the recording device 4. .
The camera control device 5 is a control device that performs overall control of the digital camera 7.

<First Embodiment>
Next, the solid-state imaging device 1 according to the first embodiment mounted on the digital camera 7 will be described. FIG. 2 is a block diagram showing a schematic configuration of the solid-state imaging device 1 according to the first embodiment. In FIG. 2, the solid-state imaging device 1 includes a solid-state imaging device control signal generation circuit 10, a vertical readout control circuit 20, a horizontal readout control circuit 30, a pixel array unit 40 composed of a plurality of unit pixels 50, and a reference voltage generation unit 100. , A column signal processing circuit 60, and an output circuit 80.

  In the solid-state imaging device 1 illustrated in FIG. 2, an example of the pixel array unit 40 in which a plurality of unit pixels 50 are two-dimensionally arranged in 7 rows and 7 columns is illustrated. In the solid-state imaging device 1 illustrated in FIG. 2, the reference voltage generation unit 100 and the column signal processing circuit 60 are configured as a signal processing circuit.

The solid-state imaging device control signal generation circuit 10 controls the vertical readout control circuit 20, the horizontal readout control circuit 30, the column signal processing circuit 60, and the reference voltage generation unit 100.
The vertical readout control circuit 20 controls each unit pixel 50 in the pixel array unit 40 according to the control from the solid-state imaging device control signal generation circuit 10, and the pixel signal of each unit pixel 50 is applied to the vertical signal line 90. Output. The vertical readout control circuit 20 outputs a control signal for controlling the unit pixel 50 for each row of the unit pixels 50 arranged in the pixel array unit 40.

  Each unit pixel 50 in the pixel array unit 40 converts the incident subject light into a pixel signal, and in accordance with the control signal input from the vertical read control circuit 20, the pixel signal corresponding to the incident subject light is Output to the vertical signal line 90. A detailed description of the unit pixel 50 will be described later.

  The column signal processing circuit 60 is arranged in each column of the pixel array unit 40, and the pixels output from the unit pixels 50 in each column to the vertical signal line 90 in accordance with the control from the solid-state imaging device control signal generation circuit 10. Signal processing such as noise suppression and analog-digital conversion is performed on the signal. The column signal processing circuit 60 outputs an output signal obtained by performing signal processing on the pixel signal to the horizontal signal line 70 in accordance with the control from the horizontal readout control circuit 30. In the following description, it is assumed that the column signal processing circuit 60 is configured by a single slope AD converter that performs analog-digital conversion using the ramp wave input from the reference voltage generation unit 100. A detailed description of the column signal processing circuit 60 will be described later.

  The reference voltage generation unit 100 generates a ramp wave (reference voltage) having a certain slope that increases or decreases with the passage of time in accordance with control from the solid-state imaging device control signal generation circuit 10. The reference voltage generation unit 100 outputs the generated ramp wave to each column signal processing circuit 60. The ramp wave generated by the reference voltage generation unit 100 is used when the column signal processing circuit 60 arranged in each column of the pixel array unit 40, that is, a single slope AD converter performs analog-digital conversion.

  The horizontal readout control circuit 30 converts the output signal after analog-digital conversion output from the column signal processing circuit 60 arranged in each column into a horizontal signal line 70 in accordance with the control from the solid-state imaging device control signal generation circuit 10. Read sequentially. The signal read to the horizontal signal line 70 is output to the outside of the solid-state imaging device 1 through the output circuit 80.

  Next, the unit pixel 50 provided in the pixel array unit 40 in the solid-state imaging device 1 of the first embodiment will be described. FIG. 3 is a circuit diagram illustrating a schematic configuration of the unit pixel 50 in the pixel array unit 40 of the solid-state imaging device 1 according to the first embodiment. In FIG. 3, one unit pixel 50 is shown. The unit pixel 50 converts the incident subject light into a pixel signal and outputs it to the vertical signal line 90. The schematic configuration of the unit pixel 50 shown in FIG. 3 is the same as the configuration of the unit pixel in the conventional solid-state imaging device. However, in the solid-state imaging device 1 of the first embodiment, as illustrated in FIG. 3, each component in each unit pixel 50 is connected to the pixel unit 11 of the first substrate and the second substrate. The pixel portion 12 is arranged separately.

  In FIG. 3, the unit pixel 50 includes a photoelectric conversion unit 101, a photoelectric conversion unit reset transistor 102, a first transfer transistor 103, and a pixel unit 12 on the second substrate formed in the pixel unit 11 on the first substrate. The second transfer transistor 104, the pixel reset transistor 105, the amplification transistor 106, the selection transistor 107, and the charge storage unit 110 are formed. In addition, the pixel portion 11 of the first substrate and the pixel portion 12 of the second substrate are connected by the inter-substrate connection portion 13.

  The inter-substrate connection unit 13 is a connection unit for electrically connecting the first substrate and the second substrate. For the inter-substrate connecting portion 13, for example, a bump produced by a vapor deposition method or a plating method is used. Note that a space existing between the first substrate and the second substrate may be filled with an insulating member such as an adhesive. The first substrate and the second substrate transmit and receive signals through the inter-substrate connection unit 13. In the unit pixel 50 shown in FIG. 3, the first transfer transistor 103 in the pixel portion 11 of the first substrate, the second transfer transistor 104 and the charge storage portion 110 in the pixel portion 12 of the second substrate, Are connected via the inter-substrate connecting portion 13.

  The photoelectric conversion unit 101 photoelectrically converts incident light to generate a signal charge, and accumulates it as a photoelectric conversion signal. The first transfer transistor 103 converts the photoelectric conversion signal stored in the photoelectric conversion unit 101 in accordance with the control signal φTX1-xx input from the vertical read control circuit 20 via the inter-substrate connection unit 13. 110. The charge storage unit 110 is a capacitor that holds (accumulates) a photoelectric conversion signal. The photoelectric conversion signal transferred by the first transfer transistor 103 is stored in the charge storage unit 110.

  Of the signal name “control signal φTX1-xx” of the control signal described above, the portion “xx” following “-” after the name “control signal φTX1” of the control signal is arranged in the pixel array unit 40. This is a part that represents the row number of the unit pixel 50 that is being used. In the following description, the numbers of the row numbers of the unit pixels 50 arranged in the pixel array unit 40 including the control signal φTX1 described above are described in the “xx” portion of each control signal. In the case where “xx” is not described in the “xx” portion and “xx” is described as it is, this control signal in the present description is not a control signal for a specific row of the pixel array unit 40. The control signal is different for each row of the pixel array unit 40 and represents a control signal that can be considered by appropriately assigning a row number.

  The second transfer transistor 104 transfers the photoelectric conversion signal held (accumulated) in the charge accumulation unit 110 to the gate terminal of the amplification transistor 106 in accordance with the control signal φTX2-xx input from the vertical read control circuit 20. To do. The amplification transistor 106 outputs a signal voltage corresponding to the photoelectric conversion signal transferred to the gate terminal. The selection transistor 107 outputs the signal voltage output from the amplification transistor 106 to the vertical signal line 90 as a pixel signal output from the unit pixel 50 in response to the control signal φSEL1-xx input from the vertical readout control circuit 20.

  The photoelectric conversion unit reset transistor 102 resets the photoelectric conversion unit 101 to the power supply voltage VDD in accordance with the control signal φFT1-xx input from the vertical read control circuit 20. The pixel reset transistor 105 resets the signal in the unit pixel 50 to the power supply voltage VDD according to the control signal φRST1-xx input from the vertical readout control circuit 20.

  In the solid-state imaging device 1, the vertical readout control circuit 20 realizes a global shutter function by simultaneously controlling all the unit pixels 50. More specifically, the vertical readout control circuit 20 outputs the control signals φFT1-xx of all the unit pixels 50 at the same time, and starts photoelectric conversion by the photoelectric conversion units 101 of all the unit pixels 50 at the same time. Then, after a predetermined exposure time has elapsed, the vertical readout control circuit 20 outputs the control signals φTX1-xx of all the unit pixels 50 simultaneously, and the photoelectric conversion units 101 of all the unit pixels 50 accumulate. The photoelectric conversion signal is simultaneously transferred to and stored in the charge storage unit 110.

  Thereafter, in the solid-state imaging device 1, the vertical readout control circuit 20 sequentially controls the unit pixels 50 for each row, thereby outputting the pixel signals photoelectrically converted by the unit pixels 50 to the vertical signal line 90. More specifically, the vertical readout control circuit 20 controls the control signal φTX2-xx, the control signal φRST1-xx, and the control signal φSEL1-xx for each row of the unit pixels 50, and is held in each charge storage unit 110. The obtained photoelectric conversion signals are sequentially output (read) to the vertical signal line 90 as pixel signals. In the unit pixel 50, deterioration of signal quality due to noise caused by leakage or the like that occurs until each unit pixel 50 is read out is suppressed by providing the charge storage unit 110 on the second substrate.

  Next, the column signal processing circuit 60 in the solid-state imaging device 1 of the first embodiment will be described. FIG. 4 is a circuit diagram showing a schematic configuration of the column signal processing circuit 60 in the solid-state imaging device 1 of the first embodiment. FIG. 4 shows a column signal processing circuit 60 (single slope AD converter) arranged in one column of the pixel array unit 40. 4 also shows the unit pixel 50 shown in FIG. Further, FIG. 4 also shows a reference voltage generation unit 100 that outputs a ramp wave to the single slope AD converter.

  The column signal processing circuit 60 performs analog-digital conversion on the pixel signal output from the unit pixel 50 to the vertical signal line 90, and outputs the converted digital output signal to the horizontal signal line 70. The schematic configuration of the column signal processing circuit 60 shown in FIG. 4 is the same as the configuration of the column signal processing circuit in the conventional solid-state imaging device. However, in the solid-state imaging device 1 according to the first embodiment, as shown in FIG. 4, each component in each column signal processing circuit 60 is replaced with the column signal processing unit 14 of the first substrate. 2 separately from the column signal processing unit 15 of the second substrate.

  In FIG. 4, a column signal processing circuit 60 includes a comparator 16 formed in the column signal processing unit 14 on the first substrate, a counter & latch unit 19 formed in the column signal processing unit 15 on the second substrate, Consists of Further, the vertical signal line 90 and the column signal processing unit 14 of the first substrate are connected to the pixel unit 11 of the first substrate and the pixel unit 12 of the second substrate in the unit pixel 50 shown in FIG. Similarly, the inter-substrate connection unit 17 connects the column signal processing unit 14 of the first substrate and the column signal processing unit 15 of the second substrate by the inter-substrate connection unit 18. Note that the reference voltage generation unit 100 is disposed on the first substrate.

  As shown in FIG. 4, in the column signal processing circuit 60, the components of the single slope AD converter including the comparator 16 that performs an analog operation and the reference voltage generation unit 100 are arranged on the first board, The components of the single slope AD converter including the counter & latch unit 19 that performs the above operations are arranged on the second substrate.

  Since the inter-substrate connecting portion 17 and the inter-substrate connecting portion 18 are connection portions for electrically connecting the first substrate and the second substrate, similarly to the inter-substrate connecting portion 13 shown in FIG. Detailed description will be omitted. In the column signal processing circuit 60 shown in FIG. 4, the signal voltage corresponding to the photoelectric conversion signal output to the vertical signal line 90 as the pixel signal and held (accumulated) in the charge accumulation unit 110 in the unit pixel 50 is The voltage is applied (input) to one input terminal of the comparator 16 in the column signal processing unit 14 of the first substrate via the inter-substrate connection unit 17. In addition, the ramp wave generated by the reference voltage generation unit 100 is applied (input) to the other input terminal of the comparator 16 in the column signal processing unit 14 of the first substrate. In addition, a signal representing a comparison result by the comparator 16 in the column signal processing unit 14 of the first substrate (hereinafter referred to as “comparison result signal”) is a counter and latch in the column signal processing unit 15 of the second substrate. The signal is input to the unit 19 via the inter-substrate connection unit 18.

  The reference voltage generation unit 100 is configured to generate a ramp wave (reference voltage) having a certain slope in synchronization with a clock signal input from the solid-state imaging device control signal generation circuit 10 in accordance with control from the solid-state imaging device control signal generation circuit 10. For example, using a digital-to-analog converter. The reference voltage generation unit 100 applies (outputs) the generated ramp wave to the comparator 16.

  The comparator 16 compares the level of the pixel signal applied through the inter-substrate connection unit 17 with the level of the ramp wave applied from the reference voltage generation unit 100. For example, the comparator 16 compares the magnitude relationship between the level of the pixel signal and the level of the ramp wave. Then, the comparator 16 outputs a comparison result signal indicating that the level of the ramp wave and the level of the pixel signal coincide with each other to the counter & latch unit 19.

  The counter & latch unit 19 starts counting the clock signal input from the solid-state imaging device control signal generation circuit 10 in accordance with the control from the solid-state imaging device control signal generation circuit 10. The timing at which the counter & latch unit 19 starts counting is synchronized with the timing at which the reference voltage generation unit 100 outputs a ramp wave. The counter & latch unit 19 stops counting the clock signal at the timing when the comparison result signal is input from the comparator 16 via the inter-substrate connection unit 18 and outputs the current count value from the unit pixel 50. The digital signal representing the level of the pixel signal thus output, that is, the digital signal resulting from the analog-digital conversion is output to the horizontal signal line 70.

  By such an operation, the column signal processing circuit 60 (single slope AD converter) performs an analog-digital conversion process on the signal voltage corresponding to the photoelectric conversion signal held (accumulated) in the charge accumulation unit 110 in the unit pixel 50. can do. Thereby, the solid-state imaging device 1 can output a digital signal corresponding to the incident subject light as an image signal.

  Further, as shown in FIG. 4, the column signal processing circuit 60 is divided into the column signal processing unit 14 of the first substrate and the column signal processing unit 15 of the second substrate as shown in FIG. The chip area can be used more effectively than the conventional solid-state imaging device 800 shown, and the mounting area of the solid-state imaging device 1 can be reduced.

  Here, the arrangement of each component of the solid-state imaging device 1 of the first embodiment will be described. FIG. 5 is a layout diagram showing an example of the arrangement of each component of the solid-state imaging device 1 according to the first embodiment on each substrate. FIG. 5 shows the arrangement of each component viewed from the incident surface side of the subject light incident on the solid-state imaging device 1. When the solid-state imaging device 1 is formed, the first substrate shown in FIG. 5A is formed so as to overlap the second substrate shown in FIG. 5B, that is, the first substrate. And the second substrate are stacked.

  As illustrated in FIG. 5, in the solid-state imaging device 1, the pixel unit 11 of the pixel array unit 40, the column signal processing unit 14 of the column signal processing circuit 60, and the reference voltage generation unit 100 are provided on the first substrate. Deploy. In the solid-state imaging device 1, the pixel unit 12 of the pixel array unit 40, the column signal processing unit 15 of the column signal processing circuit 60, the solid-state imaging device control signal generation circuit 10, the vertical readout control circuit 20, and the horizontal readout are performed. The control circuit 30 and the output circuit 80 are disposed on the second substrate.

  In an example of the arrangement of each component of the solid-state imaging device 1 shown in FIG. 5 on each substrate, the reference voltage generation unit 100 is arranged immediately above the output circuit 80. Thus, by disposing each component of the solid-state imaging device 1, the chip areas of the first substrate and the second substrate can be made substantially the same area. Adjustment regions that are not formed can be reduced.

  As described above, in the solid-state imaging device 1 according to the first embodiment, the unit pixels 50 and the column signal processing circuit 60 in the pixel array unit 40 are arranged on the first substrate and the second substrate. By forming them separately, as can be seen from FIG. 5, the difference in size between the first substrate and the second substrate can be reduced. Thereby, the adjustment area | region in a 1st board | substrate can be decreased and a chip area can be utilized more effectively than the conventional solid-state imaging device. Thereby, the mounting area of the solid-state imaging device 1 can be reduced.

  Further, in the solid-state imaging device 1 according to the first embodiment, the constituent elements of the signal processing circuit include the constituent elements of the single slope AD converter including the comparator 16 that performs the analog operation and the reference voltage generation unit 100. The components of the single slope AD converter including the counter & latch unit 19 that performs the digital operation are disposed on the second substrate. In other words, in the solid-state imaging device 1 according to the first embodiment, each component of the signal processing circuit is set to the first on the basis of whether the component performs an analog operation or a digital operation. It is arranged on either the substrate or the second substrate. Thereby, at least one of the substrates can be manufactured by a manufacturing process to which a suitable semiconductor process technology is applied. For example, the first substrate can be manufactured by a semiconductor process suitable for an analog circuit. For example, the second substrate can be manufactured by a semiconductor process suitable for a digital circuit. Thus, by disposing the components of the signal processing circuit on each substrate so that at least one substrate can be manufactured by a suitable semiconductor process, the chip cost of the solid-state imaging device 1 can be reduced. The manufacturing process can be reduced. In this case, it is desirable to determine a circuit to be arranged in consideration of other factors such as the operation speed in the column signal processing circuit 60.

  In the solid-state imaging device 1 according to the first embodiment, an example in which the reference voltage generation unit 100 is arranged immediately above the output circuit 80 in the example of the arrangement shown in FIG. However, the arrangement of the constituent elements of the solid-state imaging device 1 on each substrate is shown in FIG. 5 if the circuit areas arranged on the first substrate and the second substrate are arranged to be substantially the same area. However, the configuration is not limited to that of the first embodiment. For example, each component of the solid-state imaging device 1 can be arranged on each substrate as shown in FIG.

  FIG. 6 is a layout diagram illustrating another example of the arrangement of each component of the solid-state imaging device 1 according to the first embodiment on each substrate. Also in the example of the arrangement shown in FIG. 6, similarly to the example of the arrangement shown in FIG. 5, the arrangement of each component viewed from the incident surface side of the subject light incident on the solid-state imaging device 1 is shown. In the case of forming the solid-state imaging device 1 as well, the first substrate shown in FIG. 6A and the second substrate shown in FIG. 6B are similar to the example of the arrangement shown in FIG. Are stacked.

  In another example of the arrangement of each component of the solid-state imaging device 1 illustrated in FIG. 6 on each substrate, similarly to the example of the arrangement illustrated in FIG. The column signal processing unit 14 of the circuit 60 and the reference voltage generation unit 100 are arranged on the first substrate. In addition, the pixel unit 12 of the pixel array unit 40, the column signal processing unit 15 of the column signal processing circuit 60, the solid-state imaging device control signal generation circuit 10, the vertical readout control circuit 20, the horizontal readout control circuit 30, and the output The circuit 80 is disposed on the second substrate.

  In another example of the arrangement shown in FIG. 6, the reference voltage generation unit 100 is arranged immediately above the vertical read control circuit 20. As described above, the circuit arrangement other than the pixel array unit 40 arranged on the first substrate and the second substrate is substantially the same area as the circuits arranged on the first substrate and the second substrate. As with the arrangement shown in FIG. 5, the adjustment area of the first substrate can be reduced and the chip area can be effectively utilized. As in the example of the arrangement shown in FIG. 5, it is possible to reduce the mounting area of the solid-state imaging device 1, reduce the chip cost of the solid-state imaging device 1, and reduce the manufacturing process. The effect that it is possible can be obtained.

<Second Embodiment>
Next, the solid-state imaging device according to the second embodiment mounted on the digital camera 7 will be described. In the solid-state imaging device of the second embodiment, only the column signal processing circuit 60 in the solid-state imaging device 1 of the first embodiment shown in FIG. The constituent elements are the same as those of the solid-state imaging device 1 of the first embodiment. Therefore, in the components of the solid-state imaging device of the second embodiment, the same reference numerals are added to the same components as those of the solid-state imaging device 1 of the first embodiment shown in FIG. Is omitted.

  FIG. 7 is a circuit diagram showing a schematic configuration of the column signal processing circuit 62 in the solid-state imaging device according to the second embodiment. As with the column signal processing circuit 60 shown in FIG. 4, the column signal processing circuit 62 is arranged in each column of the pixel array unit 40, and in accordance with control from the solid-state imaging device control signal generation circuit 10, Signal processing such as noise suppression and analog-digital conversion is performed on the pixel signals output from the unit pixels 50 to the vertical signal lines 90, respectively. Further, the column signal processing circuit 62 outputs an output signal obtained by performing signal processing on the pixel signal in accordance with the control from the horizontal readout control circuit 30 in the same manner as the column signal processing circuit 60 shown in FIG. Output to the signal line 70. In the following description, similarly to the column signal processing circuit 60 illustrated in FIG. 4, the column signal processing circuit 62 performs single-to-digital AD conversion using the ramp wave input from the reference voltage generation unit 100. It demonstrates as what is comprised with the converter.

  7 shows a column signal processing circuit 62 (single slope AD converter) arranged in one column of the pixel array section 40, similarly to the column signal processing circuit 60 shown in FIG. FIG. 7 also shows the unit pixel 50 shown in FIG. 3 and the reference voltage generator 100 together with the column signal processing circuit 60 shown in FIG. As shown in FIG. 7, also in the column signal processing circuit 62, each component in the column signal processing circuit 62 includes a column signal processing unit 14 on the first substrate and a column signal processing unit 15 on the second substrate. Divide into two.

  In FIG. 7, the column signal processing circuit 62 includes a comparator 16 and a level shifter 21 formed in the column signal processing unit 14 on the first substrate, and a counter & latch formed in the column signal processing unit 15 on the second substrate. Part 19. Similarly to the column signal processing circuit 60 shown in FIG. 4, the vertical signal line 90 and the column signal processing unit 14 of the first substrate are connected by the inter-substrate connecting unit 17, and the column signal of the first substrate is connected. The processing unit 14 and the column signal processing unit 15 of the second substrate are connected by an inter-substrate connection unit 18. Note that the reference voltage generation unit 100 is also arranged on the first substrate.

  In the column signal processing circuit 62, the components of the single slope AD converter including the comparator 16 arranged on the first substrate are driven with a relatively high power supply voltage. In the column signal processing circuit 62, the components of the single slope AD converter including the counter & latch unit 19 arranged on the second substrate are driven with a relatively low power supply voltage. The reference voltage generation unit 100 is also driven with a relatively high power supply voltage. Therefore, as shown in FIG. 7, in the column signal processing circuit 62, the components of the single slope AD converter including the comparator 16 driven by a relatively high power supply voltage and the reference voltage generation unit 100 are the first. The components of the single slope type AD converter including the counter & latch unit 19 which is disposed on the substrate and driven by a relatively low power supply voltage are disposed on the second substrate. The column signal processing circuit 62 includes a level shifter 21 for lowering the signal level of the comparison result signal output from the comparator 16 in addition to the column signal processing circuit 60 shown in FIG.

  The operations of the comparator 16, the counter & latch unit 19, and the reference voltage generation unit 100 are the same as those in the column signal processing circuit 60 shown in FIG. Since the operation is the same as that of the latch unit 19 and the reference voltage generation unit 100, detailed description thereof is omitted.

  In the column signal processing circuit 62 shown in FIG. 7, as in the column signal processing circuit 60 shown in FIG. A signal voltage corresponding to the accumulated photoelectric conversion signal is applied (input) to one input terminal of the comparator 16 in the column signal processing unit 14 of the first substrate via the inter-substrate connection unit 17. . Further, in the column signal processing circuit 62, similarly to the column signal processing circuit 60 shown in FIG. Is applied (input) to the other input terminal.

  In the column signal processing circuit 62, a comparison result signal that is a comparison result by the comparator 16 in the column signal processing unit 14 of the first substrate is output to the level shifter 21 in the column signal processing unit 14 of the first substrate. . The level shifter 21 converts the output level of the comparison result signal having a relatively high voltage input from the comparator 16 into a comparison result signal having a relatively low voltage used in the second substrate. Then, the level shifter 21 outputs the comparison result signal obtained by converting the output level to the counter & latch unit 19 in the column signal processing unit 15 of the second substrate via the inter-substrate connection unit 18.

  The counter & latch unit 19 converts the current count value stopped at the timing when the comparison result signal whose output level has been converted is input, and the digital signal resulting from analog-digital conversion of the level of the pixel signal output from the unit pixel 50 Is output to the horizontal signal line 70.

  By such an operation, the column signal processing circuit 62 (single slope AD converter) performs an analog-to-digital conversion process on the signal voltage corresponding to the photoelectric conversion signal held (accumulated) in the charge accumulation unit 110 in the unit pixel 50. can do. Thereby, also in the solid-state imaging device 1 of the second embodiment, similarly to the solid-state imaging device 1 of the first embodiment, a digital signal corresponding to the incident subject light can be output as an image signal.

  Further, as shown in FIG. 7, the column signal processing circuit 62 is divided into the column signal processing unit 14 of the first substrate and the column signal processing unit 15 of the second substrate, thereby forming a circuit. It is possible to reduce the adjustment area that is not used and to effectively use the chip area. In the solid-state imaging device 1 according to the second embodiment, the mounting area of the solid-state imaging device 1 can be reduced as in the solid-state imaging device 1 according to the first embodiment. Note that the arrangement of each component on each substrate in the solid-state imaging device 1 according to the second embodiment can be considered in the same manner as the arrangement example shown in FIGS. To do.

  As described above, also in the solid-state imaging device 1 according to the second embodiment, each unit pixel 50 and the column signal processing circuit 62 in the pixel array unit 40 are arranged on the first substrate and the second substrate. By forming them separately, the difference in size between the first substrate and the second substrate can be reduced as in the solid-state imaging device 1 of the first embodiment. As a result, the adjustment area in the first substrate can be reduced, and the chip area can be used more effectively than the conventional solid-state imaging device, and the solid-state imaging device 1 as in the first embodiment. 1 mounting area can be reduced.

  Further, in the solid-state imaging device 1 according to the second embodiment, the constituent elements of the signal processing circuit, the constituent elements of the single slope AD converter including the comparator 16 driven by a relatively high power supply voltage, and the reference voltage generation The unit 100 is arranged on the first substrate, and the components of the single slope AD converter including the counter & latch unit 19 driven by a relatively low power supply voltage are arranged on the second substrate. Further, in order to match the signal level between the components of the single slope type AD converter arranged on the first substrate and the components of the single slope type AD converter arranged on the second substrate, the level shifter 21 Is arranged. That is, in the solid-state imaging device 1 according to the second embodiment, each component is connected to the first substrate or the base on the basis of whether the power supply voltage for driving each component of the signal processing circuit is relatively high or low. It is arranged on any one of the second substrates. Thereby, for example, when forming a component of a single slope type AD converter including the counter & latch unit 19 disposed in the column signal processing unit 15 of the second substrate, a fine semiconductor process technology with a low withstand voltage is formed. Can be applied. Thereby, the mounting area of the solid-state imaging device 1 can be further reduced, and the chip cost of the solid-state imaging device 1 can be reduced. In this case as well, it is desirable to determine a circuit to be arranged in consideration of other factors such as the operation speed in the column signal processing circuit 60.

  As described above, according to the embodiment for carrying out the present invention, each component of the signal processing circuit of the solid-state imaging device is divided into the first substrate and the second substrate on the basis of a predetermined criterion. It is divided and formed. Thereby, the difference in size between the first substrate and the second substrate forming the solid-state imaging device can be reduced. As a result, the manufacturing cost of the solid-state imaging device and the cost associated with the chip can be reduced.

  Furthermore, according to the form for implementing this invention, since the 1st board | substrate and 2nd board | substrate which form a solid-state imaging device can be produced separately, 1st board | substrate and 2nd board | substrate are A semiconductor process suitable for each can be used. Thereby, the cost reduction of a solid-state imaging device can be aimed at.

  In addition, according to the mode for carrying out the present invention, a signal processing circuit for performing signal processing such as noise suppression and analog-digital conversion is formed separately on the first substrate and the second substrate, so that a small chip is formed. A signal processing circuit can be realized with an area (mounting area), and a solid-state imaging device capable of obtaining a high-quality image can be realized.

  In this embodiment, the solid-state imaging device according to an aspect of the present invention corresponds to, for example, the solid-state imaging device 1, the imaging device corresponds to, for example, the digital camera 7, and the connection unit includes, for example, a substrate. It corresponds to the inter-connection portion 13, the inter-substrate connection portion 17, and the inter-substrate connection portion 18. In the present embodiment, the photoelectric conversion element according to an aspect of the present invention corresponds to, for example, the photoelectric conversion unit 101, and the readout circuit includes, for example, the second transfer transistor 104, the amplification transistor 106, and the selection The signal processing circuit corresponding to the transistor 107 corresponds to, for example, the column signal processing circuit 60 and the reference voltage generation unit 100.

  In the present embodiment, the pixel unit according to an aspect of the present invention corresponds to, for example, the pixel array unit 40 or the pixel unit 11 and the pixel unit 12, and the pixel corresponds to, for example, the unit pixel 50. The circuit elements divided into the first signal processing circuits correspond to, for example, the comparator 16 and the level shifter 21 or the column signal processing unit 14, and the circuit elements divided into the second signal processing circuits include, for example, a counter and latch. This corresponds to the unit 19 or the column signal processing unit 15.

  In the present embodiment, the comparator according to an aspect of the present invention corresponds to, for example, the comparator 16, the counter and the latch correspond to, for example, the counter & latch unit 19, and the level shifter includes, for example, the level shifter The reference voltage generation unit corresponds to the reference voltage generation unit 100, for example.

  In the present embodiment, the read transistor according to an aspect of the present invention corresponds to, for example, the second transfer transistor 104, the amplification transistor 106, and the selection transistor 107.

  In addition, the specific structure in this invention is not limited to the form for implementing this invention, A various change can be made in the range which does not deviate from the meaning of this invention. For example, in the embodiment for carrying out the present invention, the case where the signal processing circuit is configured using a single slope AD converter has been described. However, instead of the single slope AD converter, a pipeline AD converter is used. The signal processing circuit can also be configured using a delta sigma type AD converter or a time conversion type AD converter. Further, for example, not only the AD converter but also other signal processing circuits and column signal processing circuits are divided into the first substrate and the second substrate according to the operation of each circuit and the power supply voltage. The chip area can be effectively utilized as in the embodiment for carrying out the present invention. As a result, at least one of the substrates can be manufactured by a manufacturing process to which a suitable semiconductor process technology is applied, and the mounting area of the solid-state imaging device can be reduced. It is possible to obtain an effect that it is possible to reduce the manufacturing process and the manufacturing process.

  The circuit configuration and the specific configuration of the driving method in the present invention are not limited to the embodiments for carrying out the present invention, and various modifications can be made without departing from the spirit of the present invention. . For example, even when the components and driving methods of pixels and signal processing circuits are changed, the driving method is changed according to the components and circuit configurations in the solid-state imaging device, unit pixel, signal processing circuit, or column signal processing circuit. You can respond by doing.

  Further, the arrangement of the pixels in the row direction and the column direction is not limited to the mode for carrying out the present invention, and the number of pixels in the row direction and the column direction in which the pixels are arranged without departing from the gist of the present invention. Can be changed.

  As described above, the description has been given based on the embodiment for carrying out the present invention. However, any combination of each component, each processing process, and the expression of the present invention converted into a computer program product or the like is also an aspect of the present invention. It is effective as Here, the computer program product includes a recording medium (DVD medium, hard disk medium, memory medium, etc.) on which a program code is recorded, a computer on which the program code is recorded, and an Internet system (for example, a server and the like) on which the program code is recorded. A recording medium, apparatus, device or system in which a program code is recorded, such as a system including a client terminal. In this case, each component and each processing process described above are mounted in each module, and a program code including the mounted module is recorded in a computer program product.

  For example, a computer program product according to an aspect of the present invention includes a program code for causing a computer to execute processing of a solid-state imaging device in which a first board and a second board are electrically connected by a connection unit. A recorded computer program product, wherein a signal generated by a photoelectric conversion element disposed on the first substrate in accordance with an amount of incident light is disposed on the second substrate corresponding to the photoelectric conversion element. Based on a readout module that reads out via the connection unit and outputs as an analog readout signal by a readout circuit, and a classification standard that is a standard for classification into the first substrate side or the second substrate side Each circuit element is divided into a first signal processing circuit or a second signal processing circuit, and is divided into the first signal processing circuit. The circuit element is arranged in the first substrate, and the circuit element divided into the second signal processing circuit is signaled with respect to the read signal by the signal processing circuit arranged in the second substrate. A computer program product in which a program code including a signal processing module for performing processing is recorded.

  Further, for example, a computer program product according to an aspect of the present invention is a program for causing a computer to execute processing of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit. A computer program product in which a code is recorded, wherein a signal generated by a photoelectric conversion element arranged on the first substrate in accordance with an amount of incident light is arranged on the second substrate corresponding to the photoelectric conversion element A read module that reads out via the connection unit and outputs the read signal as an analog read signal, and a first signal processing that performs analog signal processing on the read signal disposed on the first substrate. A readout signal that has been subjected to analog signal processing by the circuit and the first signal processing circuit disposed on the second substrate. And a second signal processing circuit that performs digital signal processing on the read signal. The signal processing module performs signal processing on the read signal and converts the read signal into a digital signal corresponding to the read signal. A computer program product in which a program code including the above is recorded.

  Further, for example, a computer program product according to an aspect of the present invention is a program for causing a computer to execute processing of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit. A computer program product in which a code is recorded, wherein a signal generated by a photoelectric conversion element arranged on the first substrate in accordance with an amount of incident light is arranged on the second substrate corresponding to the photoelectric conversion element A readout module that reads out via the connection unit and outputs the analog readout signal by the readout circuit, and a first signal that is driven at a power supply voltage higher than a predetermined reference value disposed on the first substrate A processing circuit, and a second signal processing circuit which is disposed on the second substrate and is driven with a power supply voltage lower than the predetermined reference value. The example was the signal processing circuit, a signal processing module to perform signal processing on the read signal, a computer program product program code is recorded, including a.

  Further, for example, a computer program product according to an aspect of the present invention is a program for causing a computer to execute processing of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit. A computer program product in which a code is recorded, wherein a signal generated by a photoelectric conversion element arranged on the first substrate in accordance with an amount of incident light is arranged on the second substrate corresponding to the photoelectric conversion element A readout module that outputs an analog readout signal from the other of the source and the drain of the readout transistor that is received by one of the source and the drain via the connection portion, and the first substrate side or the second substrate side Each circuit element is divided into the first signal processing circuit based on the classification standard, which is a standard for classifying the first signal processing circuit. Is divided into second signal processing circuits, the circuit elements divided into the first signal processing circuits are arranged in the first substrate, and the circuit elements divided into the second signal processing circuits are the first signal processing circuits. 2 is a computer program product in which a program code including a signal processing module that performs signal processing on the read signal by a signal processing circuit disposed in the second substrate is recorded.

  Further, for example, a computer program product according to an aspect of the present invention is a program for causing a computer to execute processing of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit. A computer program product in which a code is recorded, wherein a signal generated by a photoelectric conversion element arranged on the first substrate in accordance with an amount of incident light is arranged on the second substrate corresponding to the photoelectric conversion element A readout module for outputting an analog readout signal from the other of the source and the drain of the readout transistor received by one of the source and the drain via the connection portion, and the readout signal disposed on the first substrate. A first signal processing circuit for performing analog signal processing on the second substrate; A signal processing circuit comprising: a second signal processing circuit that performs digital signal processing on a read signal that has been subjected to analog signal processing by one signal processing circuit; And a signal processing module for converting the signal into a digital signal corresponding to the computer program product.

  Further, for example, a computer program product according to an aspect of the present invention is a program for causing a computer to execute processing of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit. A computer program product in which a code is recorded, wherein a signal generated by a photoelectric conversion element arranged on the first substrate in accordance with an amount of incident light is arranged on the second substrate corresponding to the photoelectric conversion element A read module for outputting an analog read signal from the other of the source and the drain of the read transistor received by one of the source and the drain via the connection portion, and a predetermined reference value disposed on the first substrate A first signal processing circuit that is driven by a higher power supply voltage, and the predetermined circuit disposed on the second substrate. A computer on which a program code including a signal processing module that performs signal processing on the read signal by a signal processing circuit including a second signal processing circuit that is driven by a power supply voltage lower than a quasi-value is recorded It is a program product.

  Further, for example, a program for realizing processing by each component of the digital camera 7 shown in FIG. 1 is recorded on a computer-readable recording medium, and the program recorded on the recording medium is read into a computer system. The various processes described above related to the digital camera 7 may be performed by executing. Here, the “computer system” may include an OS and hardware such as peripheral devices. Further, the “computer system” includes a homepage providing environment (or display environment) if a WWW system is used. The “computer-readable recording medium” means a flexible disk, a magneto-optical disk, a ROM, a writable nonvolatile memory such as a flash memory, a portable medium such as a CD-ROM, a hard disk built in a computer system, etc. This is a storage device.

  Further, the “computer-readable recording medium” refers to a volatile memory (for example, DRAM (Dynamic) in a computer system serving as a server or a client when a program is transmitted via a network such as the Internet or a communication line such as a telephone line. Random Access Memory)) that holds a program for a certain period of time is also included. The program may be transmitted from a computer system storing the program in a storage device or the like to another computer system via a transmission medium or by a transmission wave in the transmission medium. Here, the “transmission medium” for transmitting the program refers to a medium having a function of transmitting information, such as a network (communication network) such as the Internet or a communication line (communication line) such as a telephone line. The program may be for realizing a part of the functions described above. Furthermore, what can implement | achieve the function mentioned above in combination with the program already recorded on the computer system, and what is called a difference file (difference program) may be sufficient.

  The embodiment of the present invention has been described above with reference to the drawings. However, the specific configuration is not limited to this embodiment, and includes various modifications within the scope of the present invention. It is.

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by connection means, and are disposed on the first substrate. A photoelectric conversion means for generating a signal corresponding to the amount of incident light, and a corresponding connection means arranged on the second substrate corresponding to the photoelectric conversion means, and corresponding to the signal generated by the photoelectric conversion means. Read out via, and output as an analog read signal, a pixel means provided with a plurality of pixels, and a signal processing means comprising a circuit element for performing signal processing on the read signal, Each of the signal processing means is based on a classification standard that is a standard for classifying the circuit elements constituting the signal processing means into the first substrate side or the second substrate side, respectively. The circuit element is divided into first signal processing means or second signal processing means, the circuit element divided into the first signal processing means is arranged in the first substrate, and the second signal processing means The solid-state imaging device may be characterized in that the circuit elements divided into two are arranged in the second substrate.

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by connection means, and are disposed on the first substrate. A photoelectric conversion means for generating a signal corresponding to the amount of incident light, and a corresponding connection means arranged on the second substrate corresponding to the photoelectric conversion means, and corresponding to the signal generated by the photoelectric conversion means. A pixel means including a plurality of pixel means, and a digital signal corresponding to the readout signal. Signal processing means for converting to the first signal processing means, the signal processing means being arranged on the first substrate and performing analog signal processing on the read signal, and the second base. To be disposed, and a second signal processing means for performing digital signal processing on the analog signal processed read signal by said first signal processing means may be a solid-state imaging device, characterized in that.

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by connection means, and are disposed on the first substrate. A photoelectric conversion means for generating a signal corresponding to the amount of incident light, and a corresponding connection means arranged on the second substrate corresponding to the photoelectric conversion means, and corresponding to the signal generated by the photoelectric conversion means. And a signal processing means for performing signal processing on the readout signal, the pixel comprising: a readout means for reading out via and outputting as an analog readout signal. The processing means is disposed on the first substrate and is driven with a power supply voltage higher than a predetermined reference value. The processing means is disposed on the second substrate and has a power source lower than the predetermined reference value. Driven by voltage That comprises a second signal processing unit, and may be a solid-state imaging device, characterized in that.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion means for generating a signal corresponding to the amount of light; and a signal generated by the corresponding photoelectric conversion means arranged on the second substrate in correspondence with the photoelectric conversion means, via the corresponding connection means. Read out and output as an analog read signal, a plurality of pixel means, and a signal processing means including a circuit element for performing signal processing on the read signal. The signal processing means is configured to output the circuit elements constituting the signal processing means on the basis of a classification criterion that is a criterion for classifying the circuit elements into the first substrate side or the second substrate side. The element is divided into first signal processing means or second signal processing means, the circuit element divided into the first signal processing means is arranged in the first substrate, and divided into the second signal processing means. The imaging device may be characterized in that the circuit element thus arranged is arranged in the second substrate.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion means for generating a signal corresponding to the amount of light; and a signal generated by the corresponding photoelectric conversion means arranged on the second substrate in correspondence with the photoelectric conversion means, via the corresponding connection means. Read out and outputs as an analog read signal. Pixel means including a plurality of pixels, and performs signal processing on the read signal and converts it into a digital signal corresponding to the read signal. Signal processing means, and the signal processing means is disposed on the first substrate, and is disposed on the second substrate, and the first signal processing means performs analog signal processing on the read signal. Is, and a second signal processing means for performing digital signal processing on the analog signal processed read signal by said first signal processing means may be an image pickup apparatus characterized by.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion means for generating a signal corresponding to the amount of light; and a signal generated by the corresponding photoelectric conversion means arranged on the second substrate in correspondence with the photoelectric conversion means, via the corresponding connection means. Read out and outputs as an analog read signal. The signal processing means includes: pixel means in which a plurality of pixels are arranged; and signal processing means for performing signal processing on the read signal. Are disposed on the first substrate and driven with a power supply voltage higher than a predetermined reference value, and are disposed on the second substrate with a power supply voltage lower than the predetermined reference value. Second to drive No. processing comprises means, and may be an imaging apparatus characterized by.

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by connection means, and are disposed on the first substrate. A photoelectric conversion means for generating a signal corresponding to the amount of incident light, and a corresponding connection means arranged on the second substrate corresponding to the photoelectric conversion means, and corresponding to the signal generated by the photoelectric conversion means. A plurality of pixels each having a readout transistor which is received by one of the source and the drain via the other and outputs as an analog readout signal from the other of the source and the drain; and a signal for the readout signal Signal processing means including circuit elements for performing processing, wherein the signal processing means moves the circuit elements constituting the signal processing means to the first substrate side or the first Each of the circuit elements is divided into first signal processing means or second signal processing means based on a classification standard that is a standard for classifying the circuit board into the first signal processing means. The solid-state imaging device may be characterized in that a circuit element is arranged in the first substrate, and the circuit element divided by the second signal processing means is arranged in the second substrate. .

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by connection means, and are disposed on the first substrate. A photoelectric conversion means for generating a signal corresponding to the amount of incident light, and a corresponding connection means arranged on the second substrate corresponding to the photoelectric conversion means, and corresponding to the signal generated by the photoelectric conversion means. A plurality of pixels each having a readout transistor which is received by one of the source and the drain via the other and outputs as an analog readout signal from the other of the source and the drain; and a signal for the readout signal Signal processing means for performing processing and converting it into a digital signal corresponding to the read signal, the signal processing means being disposed on the first substrate, First signal processing means that performs analog signal processing on the second substrate, and second signal processing that is arranged on the second substrate and performs digital signal processing on the read signal that has been analog signal processed by the first signal processing means And a solid-state imaging device characterized by comprising:

  The solid-state imaging device according to an aspect of the present invention is a solid-state imaging device in which a first substrate and a second substrate are electrically connected by connection means, and are disposed on the first substrate. A photoelectric conversion means for generating a signal corresponding to the amount of incident light, and a corresponding connection means arranged on the second substrate corresponding to the photoelectric conversion means, and corresponding to the signal generated by the photoelectric conversion means. A plurality of pixels each having a readout transistor which is received by one of the source and the drain via the other and outputs as an analog readout signal from the other of the source and the drain; and a signal for the readout signal Signal processing means for performing processing, wherein the signal processing means is disposed on the first substrate, and is driven by a power supply voltage higher than a predetermined reference value. Arranged on the second substrate, and a second signal processing means for driving at the predetermined power source voltage lower than the reference value, it may be a solid-state imaging device, characterized in that.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion means for generating a signal corresponding to the amount of light; and a signal generated by the corresponding photoelectric conversion means arranged on the second substrate in correspondence with the photoelectric conversion means, via the corresponding connection means. A plurality of pixels each having a readout transistor that receives one of the source and the drain and outputs an analog readout signal from the other of the source and the drain; and performs signal processing on the readout signal. Signal processing means including a circuit element to perform, wherein the signal processing means moves the circuit element constituting the signal processing means to the first substrate side or the second substrate. Each of the circuit elements is classified into first signal processing means or second signal processing means based on a classification criterion that is a standard for classifying the circuit elements into the first signal processing means. The imaging device may be characterized in that the circuit element arranged in the first substrate and divided by the second signal processing means is arranged in the second substrate.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion means for generating a signal corresponding to the amount of light; and a signal generated by the corresponding photoelectric conversion means arranged on the second substrate in correspondence with the photoelectric conversion means, via the corresponding connection means. A plurality of pixels each having a readout transistor that receives one of the source and the drain and outputs an analog readout signal from the other of the source and the drain; and performs signal processing on the readout signal. And a signal processing unit that converts the signal into a digital signal corresponding to the read signal, and the signal processing unit is disposed on the first substrate, and First signal processing means for performing analog signal processing; and second signal processing means for performing digital signal processing on a read signal that is disposed on the second substrate and subjected to analog signal processing by the first signal processing means; The imaging device characterized by comprising.

  In addition, an imaging device according to an aspect of the present invention is an imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, and the imaging device is disposed on the first substrate and is incident A photoelectric conversion means for generating a signal corresponding to the amount of light; and a signal generated by the corresponding photoelectric conversion means arranged on the second substrate in correspondence with the photoelectric conversion means, via the corresponding connection means. A plurality of pixels each having a readout transistor that receives one of the source and the drain and outputs an analog readout signal from the other of the source and the drain; and performs signal processing on the readout signal. Signal processing means for performing, wherein the signal processing means is disposed on the first substrate and is driven by a power supply voltage higher than a predetermined reference value; and the second signal processing means Are arranged in a plate, and a second signal processing means for driving at a low power supply voltage than the predetermined reference value may be an imaging apparatus characterized by.

  The embodiment of the present invention has been described above with reference to the drawings. However, the specific configuration is not limited to this embodiment, and various alternatives and modifications can be made without departing from the spirit of the present invention. The equivalent can also be changed. Accordingly, the scope of the invention should not be determined with reference to the above description, but should be determined by the claims, including the full scope of equivalents. In addition, any of the features described above may be combined with other features regardless of whether or not they are preferable. Also, in the claims, each component is one or more quantities unless explicitly stated otherwise. In addition, the claims should not be construed as including means-plus-function limitations unless explicitly stated in the claims using words such as “means for”.

  In the solid-state imaging device according to the embodiment of the present invention, two substrates may be connected by a connection unit, or three or more substrates may be connected by a connection unit. In the case of a solid-state imaging device in which three or more substrates are connected at the connection portion, two of them correspond to the first substrate and the second substrate according to the claims.

DESCRIPTION OF SYMBOLS 1 ... Solid-state imaging device 2 ... Lens unit part 3 ... Image signal processing device 4 ... Recording device 5 ... Camera control device 6 ... Display device 7 ... Digital camera 10 ... Solid-state imaging device control signal generation circuit 20 ... vertical readout control circuit 30 ... horizontal readout control circuit 40 ... pixel array unit 50 ... unit pixel 11 ... pixel unit 12 ... pixel unit 101 ... Photoelectric conversion unit 102 ... Photoelectric conversion unit reset transistor 103 ... First transfer transistor 104 ... Second transfer transistor 105 ... Pixel reset transistor 106 ... Amplification transistor 107 ... Select transistor 110... Charge storage unit 13... Inter-substrate connection unit 60 and 62... Column signal processing circuit 14. ... Comparator 17 ... Inter-board connection 18 ... Inter-board connection 19 ... Counter & latch 21 ... Level shifter 70 ... Horizontal signal line 80 ... Output circuit 90 ... Vertical signal line 100 ... reference voltage generation unit 800 ... solid-state imaging device

Claims (48)

The first substrate and the second substrate are solid-state imaging devices electrically connected by a connection unit,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
A reading circuit disposed on the second substrate corresponding to the photoelectric conversion element, and reading out a signal generated by the corresponding photoelectric conversion element via the corresponding connection unit and outputting the signal as an analog read signal; ,
A plurality of pixels each having a pixel portion, and
A signal processing circuit including a circuit element for performing signal processing on the read signal;
With
The signal processing circuit includes:
Based on a classification standard that is a standard for classifying the circuit elements constituting the signal processing circuit into the first substrate side or the second substrate side, each circuit element is subjected to first signal processing. A circuit or a second signal processing circuit, the circuit element partitioned into the first signal processing circuit is disposed in the first substrate, and the circuit element partitioned into the second signal processing circuit is Placing in a second substrate;
A solid-state imaging device. The circuitry which performs analog signal processing on the pre-SL read signal divided into the first signal processing circuit,
A circuit element that performs digital signal processing on a read signal that has been subjected to analog signal processing by the circuit element that is partitioned into the first signal processing circuit is partitioned into the second signal processing circuit.
The solid-state imaging device according to claim 1 . The classification criteria are:
A standard determined based on a voltage level for driving the circuit element;
The solid-state imaging device according to claim 1. The pixel portion is
A plurality of the pixels are arranged in a matrix,
The signal processing circuit includes:
A plurality of pixels are arranged corresponding to the columns of the pixels arranged in the pixel unit,
Each of the signal processing circuits
The potential of the readout signal of the corresponding pixel is compared with the potential of an analog reference signal having a certain slope that increases or decreases over time, and the potential of the reference signal becomes the potential of the readout signal. A comparator that outputs a comparison signal indicating that a predetermined condition is satisfied is provided as the circuit element divided into the first signal processing circuit.
The solid-state imaging device according to claim 1. Each of the signal processing circuits
When the reference signal is input to the comparator, the counter that counts the time during which the comparator compares the potential of the read signal and the potential of the reference signal, and when the comparison signal is output And a latch for holding a digital count value output from the counter as the circuit element divided into the second signal processing circuit,
The solid-state imaging device according to claim 4 . Each of the signal processing circuits
A level shifter that converts the comparison signal of the first voltage level output from the comparator into a second voltage level and outputs the converted signal, as the circuit element divided into the first signal processing circuit;
The solid-state imaging device according to claim 4 . The second voltage level is:
A voltage level lower than the first voltage level;
The solid-state imaging device according to claim 6 . A reference voltage generator for generating the reference signal is disposed in the first substrate;
An output circuit that outputs a signal corresponding to the readout signal that has been digital signal processed by the signal processing circuit as an output signal of the solid-state imaging device is disposed in the second substrate.
The solid-state imaging device according to claim 4 . The reference voltage generator is
Arranged in a region in the first substrate overlapping in a direction perpendicular to a region occupied by the output circuit in the second substrate;
The solid-state imaging device according to claim 8 . A reference voltage generator for generating the reference signal is disposed in the first substrate;
For each row of the pixels arranged in the pixel unit, a vertical readout control circuit for controlling readout as a readout signal of a signal generated by the corresponding photoelectric conversion element by the readout circuit provided in each pixel. Is disposed in the second substrate,
The solid-state imaging device according to claim 4 . The reference voltage generator is
Arranged in a region in the first substrate overlapping in a vertical direction with respect to a region occupied by the vertical read control circuit in the second substrate;
The solid-state imaging device according to claim 1 0, characterized in that. The region of the circuit element other than the pixel portion disposed in the first substrate and the region of the circuit element other than the pixel portion disposed in the second substrate are regions having the same size.
The solid-state imaging device according to any one of claims 1 to 11, wherein the solid-state imaging device is provided. Electrically connecting the readout circuit arranged in the second substrate and the circuit element divided into the first signal processing circuits arranged in the first substrate by the connection unit;
Electrically connecting the circuit element partitioned into the first signal processing circuit and the circuit element partitioned into the second signal processing circuit disposed on the second substrate by the connecting portion;
The solid-state imaging device according to claim 1. Electrically connecting the output end of the readout circuit and the input end of the circuit element serving as the input end of the first signal processing circuit via the connecting portion;
The output end of the circuit element serving as the output end of the first signal processing circuit and the input end of the circuit element serving as the input end of the second signal processing circuit are electrically connected via the connection portion. ,
The solid-state imaging device according to claim 1 3, characterized in that. The first substrate and the second substrate are solid-state imaging devices electrically connected by a connection unit,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
A reading circuit disposed on the second substrate corresponding to the photoelectric conversion element, and reading out a signal generated by the corresponding photoelectric conversion element via the corresponding connection unit and outputting the signal as an analog read signal; ,
A plurality of pixels each having a pixel portion, and
A signal processing circuit that performs signal processing on the read signal and converts the signal into a digital signal corresponding to the read signal;
With
The signal processing circuit includes:
A first signal processing circuit disposed on the first substrate and performing analog signal processing on the read signal;
A second signal processing circuit that is disposed on the second substrate and performs digital signal processing on a read signal that has been subjected to analog signal processing by the first signal processing circuit;
Comprising
A solid-state imaging device. The first substrate and the second substrate are solid-state imaging devices electrically connected by a connection unit,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
A reading circuit disposed on the second substrate corresponding to the photoelectric conversion element, and reading out a signal generated by the corresponding photoelectric conversion element via the corresponding connection unit and outputting the signal as an analog read signal; ,
A plurality of pixels each having a pixel portion, and
A signal processing circuit for performing signal processing on the read signal;
With
The signal processing circuit includes:
A first signal processing circuit disposed on the first substrate and driven by a power supply voltage higher than a predetermined reference value;
A second signal processing circuit disposed on the second substrate and driven by a power supply voltage lower than the predetermined reference value;
Comprising
A solid-state imaging device. The pixel is
A signal storage circuit for storing a signal generated by the photoelectric conversion element;
The readout circuit is
Read the signal stored in the signal storage circuit,
The solid-state imaging device according to claim 1. The signal storage circuit includes:
Disposed on the second substrate;
The solid-state imaging device according to claim 17 . The connection point on the first substrate side in the connection part and the connection point on the second substrate side in the connection part are:
Arranged at any position on the path from the output terminal of the photoelectric conversion element to the input terminal of the signal storage circuit,
The solid-state imaging device according to claim 17 . The connecting portion is a bump.
The solid-state imaging device according to claim 1. The connecting portion is
A first electrode formed on the surface of the first substrate; and a second electrode formed on the surface of the second substrate and bonded to the first electrode;
The solid-state imaging device according to claim 1. The second substrate is
Connected to the surface opposite to the surface of the first substrate irradiated with light incident on the photoelectric conversion element;
The solid-state imaging device according to claim 1. A control method of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit,
A signal generated according to the amount of incident light by the photoelectric conversion element arranged on the first substrate is passed through the connection portion by a readout circuit arranged on the second substrate corresponding to the photoelectric conversion element. A read step for reading out and outputting as an analog read signal;
Each circuit element is divided into a first signal processing circuit or a second signal processing circuit on the basis of a division criterion that is a criterion for dividing the first substrate side or the second substrate side. The circuit element partitioned into a signal processing circuit is disposed in the first substrate, and the circuit element partitioned into the second signal processing circuit is disposed in the second substrate, A signal processing step for performing signal processing on the read signal;
including,
A control method for a solid-state imaging device. A control method of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit,
A signal generated according to the amount of incident light by the photoelectric conversion element arranged on the first substrate is passed through the connection portion by a readout circuit arranged on the second substrate corresponding to the photoelectric conversion element. A read step for reading out and outputting as an analog read signal;
A first signal processing circuit that performs analog signal processing on the read signal disposed on the first substrate, and a read signal that is analog signal processed by the first signal processing circuit disposed on the second substrate Signal processing step of performing signal processing on the read signal and converting it into a digital signal corresponding to the read signal by a signal processing circuit comprising a second signal processing circuit that performs digital signal processing on the read signal When,
including,
A control method for a solid-state imaging device. A control method of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit,
A signal generated according to the amount of incident light by the photoelectric conversion element arranged on the first substrate is passed through the connection portion by a readout circuit arranged on the second substrate corresponding to the photoelectric conversion element. A read step for reading out and outputting as an analog read signal;
A first signal processing circuit that is driven with a power supply voltage higher than a predetermined reference value arranged on the first substrate, and a drive with a power supply voltage lower than the predetermined reference value arranged on the second substrate. A signal processing step of performing signal processing on the read signal by a signal processing circuit comprising a second signal processing circuit;
including,
A control method for a solid-state imaging device. An imaging device in which a first substrate and a second substrate are electrically connected by a connection unit, the photoelectric conversion element disposed on the first substrate and generating a signal corresponding to an incident light amount;
A reading circuit disposed on the second substrate corresponding to the photoelectric conversion element, and reading out a signal generated by the corresponding photoelectric conversion element via the corresponding connection unit and outputting the signal as an analog read signal; ,
A plurality of pixels each having a pixel portion, and
A signal processing circuit including a circuit element for performing signal processing on the read signal;
With
The signal processing circuit includes:
Based on a classification standard that is a standard for classifying the circuit elements constituting the signal processing circuit into the first substrate side or the second substrate side, each circuit element is subjected to first signal processing. A circuit or a second signal processing circuit, the circuit element partitioned into the first signal processing circuit is disposed in the first substrate, and the circuit element partitioned into the second signal processing circuit is Placing in a second substrate;
An imaging apparatus characterized by that. An imaging apparatus in which a first substrate and a second substrate are electrically connected by a connecting portion,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
A reading circuit disposed on the second substrate corresponding to the photoelectric conversion element, and reading out a signal generated by the corresponding photoelectric conversion element via the corresponding connection unit and outputting the signal as an analog read signal; ,
A plurality of pixels each having a pixel portion, and
A signal processing circuit that performs signal processing on the read signal and converts the signal into a digital signal corresponding to the read signal;
With
The signal processing circuit includes:
A first signal processing circuit disposed on the first substrate and performing analog signal processing on the read signal;
A second signal processing circuit that is disposed on the second substrate and performs digital signal processing on a read signal that has been subjected to analog signal processing by the first signal processing circuit;
Comprising
An imaging apparatus characterized by that. An imaging apparatus in which a first substrate and a second substrate are electrically connected by a connecting portion,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
A reading circuit disposed on the second substrate corresponding to the photoelectric conversion element, and reading out a signal generated by the corresponding photoelectric conversion element via the corresponding connection unit and outputting the signal as an analog read signal; ,
A plurality of pixels each having a pixel portion, and
A signal processing circuit for performing signal processing on the read signal;
With
The signal processing circuit includes:
A first signal processing circuit disposed on the first substrate and driven by a power supply voltage higher than a predetermined reference value;
A second signal processing circuit disposed on the second substrate and driven by a power supply voltage lower than the predetermined reference value;
Comprising
An imaging apparatus characterized by that. The first substrate and the second substrate are solid-state imaging devices electrically connected by a connection unit,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
The second substrate is arranged in correspondence with the photoelectric conversion element, and receives a signal generated by the corresponding photoelectric conversion element via one of the corresponding connection portions to one of the source and the drain. From the other side, a readout transistor that outputs as an analog readout signal;
A plurality of pixels each having a pixel portion, and
A signal processing circuit including a circuit element for performing signal processing on the read signal;
With
The signal processing circuit includes:
Based on a classification standard that is a standard for classifying the circuit elements constituting the signal processing circuit into the first substrate side or the second substrate side, each circuit element is subjected to first signal processing. A circuit or a second signal processing circuit, the circuit element partitioned into the first signal processing circuit is disposed in the first substrate, and the circuit element partitioned into the second signal processing circuit is Placing in a second substrate;
A solid-state imaging device. The pixel portion is
A plurality of the pixels are arranged in a matrix,
The signal processing circuit includes:
A plurality of pixels are arranged corresponding to the columns of the pixels arranged in the pixel unit,
Each of the signal processing circuits
The potential of the readout signal of the corresponding pixel is compared with the potential of an analog reference signal having a certain slope that increases or decreases over time, and the potential of the reference signal becomes the potential of the readout signal. A comparator that outputs a comparison signal indicating that a predetermined condition is satisfied is provided as the circuit element divided into the first signal processing circuit.
30. The solid-state imaging device according to claim 29 . Each of the signal processing circuits
When the reference signal is input to the comparator, the counter that counts the time during which the comparator compares the potential of the read signal and the potential of the reference signal, and when the comparison signal is output And a latch for holding a digital count value output from the counter as the circuit element divided into the second signal processing circuit,
The solid-state imaging device according to claim 3 0, characterized in that. Each of the signal processing circuits
A level shifter that converts the comparison signal of the first voltage level output from the comparator into a second voltage level and outputs the converted signal, as the circuit element divided into the first signal processing circuit;
The solid-state imaging device according to claim 3 0, characterized in that. A reference voltage generator for generating the reference signal is disposed in the first substrate;
An output circuit that outputs a signal corresponding to the readout signal that has been digital signal processed by the signal processing circuit as an output signal of the solid-state imaging device is disposed in the second substrate.
The solid-state imaging device according to claim 3 0, characterized in that. The reference voltage generator is
Arranged in a region in the first substrate overlapping in a direction perpendicular to a region occupied by the output circuit in the second substrate;
The solid-state imaging device according to claim 3 3, characterized in that. A reference voltage generator for generating the reference signal is disposed in the first substrate;
For each row of the pixels arranged in the pixel unit, a vertical readout control circuit that controls readout of the signal generated by the corresponding photoelectric conversion element as the readout signal by the readout transistor included in each pixel. Is disposed in the second substrate,
The solid-state imaging device according to claim 3 0, characterized in that. The reference voltage generator is
Arranged in a region in the first substrate overlapping in a vertical direction with respect to a region occupied by the vertical read control circuit in the second substrate;
The solid-state imaging device according to claim 35, characterized in that. Electrically connecting the readout transistor disposed in the second substrate and the circuit element partitioned into the first signal processing circuit disposed in the first substrate by the connection unit;
Electrically connecting the circuit element partitioned into the first signal processing circuit and the circuit element partitioned into the second signal processing circuit disposed on the second substrate by the connecting portion;
30. The solid-state imaging device according to claim 29 . Electrically connecting the output terminal of the read transistor and the input terminal of the circuit element serving as the input terminal of the first signal processing circuit via the connection unit;
The output end of the circuit element serving as the output end of the first signal processing circuit and the input end of the circuit element serving as the input end of the second signal processing circuit are electrically connected via the connection portion. ,
The solid-state imaging device according to claim 3 7, characterized in that. The first substrate and the second substrate are solid-state imaging devices electrically connected by a connection unit,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
The second substrate is arranged in correspondence with the photoelectric conversion element, and receives a signal generated by the corresponding photoelectric conversion element via one of the corresponding connection portions to one of the source and the drain. From the other side, a readout transistor that outputs as an analog readout signal;
A plurality of pixels each having a pixel portion, and
A signal processing circuit that performs signal processing on the read signal and converts the signal into a digital signal corresponding to the read signal;
With
The signal processing circuit includes:
A first signal processing circuit disposed on the first substrate and performing analog signal processing on the read signal;
A second signal processing circuit that is disposed on the second substrate and performs digital signal processing on a read signal that has been subjected to analog signal processing by the first signal processing circuit;
Comprising
A solid-state imaging device. The first substrate and the second substrate are solid-state imaging devices electrically connected by a connection unit,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
The second substrate is arranged in correspondence with the photoelectric conversion element, and receives a signal generated by the corresponding photoelectric conversion element via one of the corresponding connection portions to one of the source and the drain. From the other side, a readout transistor that outputs as an analog readout signal;
A plurality of pixels each having a pixel portion, and
A signal processing circuit for performing signal processing on the read signal;
With
The signal processing circuit includes:
A first signal processing circuit disposed on the first substrate and driven by a power supply voltage higher than a predetermined reference value;
A second signal processing circuit disposed on the second substrate and driven by a power supply voltage lower than the predetermined reference value;
Comprising
A solid-state imaging device. The pixel is
A signal storage capacitor for storing a signal generated by the photoelectric conversion element;
The read transistor is
Read the signal stored in the signal storage capacity,
30. The solid-state imaging device according to claim 29 . The signal storage capacity is
Disposed on the second substrate;
The solid-state imaging device according to claim 4 1, characterized in that. A control method of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit,
A signal generated in accordance with the amount of incident light by the photoelectric conversion element disposed on the first substrate is disposed on the second substrate corresponding to the photoelectric conversion element, and is connected to the source and drain via the connection portion. A readout step of outputting the analog readout signal from the other of the source and drain of the readout transistor received by one of
Each circuit element is divided into a first signal processing circuit or a second signal processing circuit on the basis of a division criterion that is a criterion for dividing the first substrate side or the second substrate side. The circuit element partitioned into a signal processing circuit is disposed in the first substrate, and the circuit element partitioned into the second signal processing circuit is disposed in the second substrate, A signal processing step for performing signal processing on the read signal;
including,
A control method for a solid-state imaging device. A control method of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit,
A signal generated in accordance with the amount of incident light by the photoelectric conversion element disposed on the first substrate is disposed on the second substrate corresponding to the photoelectric conversion element, and is connected to the source and drain via the connection portion. A readout step of outputting the analog readout signal from the other of the source and drain of the readout transistor received by one of
A first signal processing circuit that performs analog signal processing on the read signal disposed on the first substrate, and a read signal that is analog signal processed by the first signal processing circuit disposed on the second substrate Signal processing step of performing signal processing on the read signal and converting it into a digital signal corresponding to the read signal by a signal processing circuit comprising a second signal processing circuit that performs digital signal processing on the read signal When,
including,
A control method for a solid-state imaging device. A control method of a solid-state imaging device in which a first substrate and a second substrate are electrically connected by a connection unit,
A signal generated in accordance with the amount of incident light by the photoelectric conversion element disposed on the first substrate is disposed on the second substrate corresponding to the photoelectric conversion element, and is connected to the source and drain via the connection portion. A readout step of outputting the analog readout signal from the other of the source and drain of the readout transistor received by one of
A first signal processing circuit that is driven with a power supply voltage higher than a predetermined reference value arranged on the first substrate, and a drive with a power supply voltage lower than the predetermined reference value arranged on the second substrate. A signal processing step of performing signal processing on the read signal by a signal processing circuit comprising a second signal processing circuit;
including,
A control method for a solid-state imaging device. An imaging apparatus in which a first substrate and a second substrate are electrically connected by a connecting portion,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
The second substrate is arranged in correspondence with the photoelectric conversion element, and receives a signal generated by the corresponding photoelectric conversion element via one of the corresponding connection portions to one of the source and the drain. From the other side, a readout transistor that outputs as an analog readout signal;
A plurality of pixels each having a pixel portion, and
A signal processing circuit including a circuit element for performing signal processing on the read signal;
With
The signal processing circuit includes:
Based on a classification standard that is a standard for classifying the circuit elements constituting the signal processing circuit into the first substrate side or the second substrate side, each circuit element is subjected to first signal processing. A circuit or a second signal processing circuit, the circuit element partitioned into the first signal processing circuit is disposed in the first substrate, and the circuit element partitioned into the second signal processing circuit is Placing in a second substrate;
An imaging apparatus characterized by that. An imaging apparatus in which a first substrate and a second substrate are electrically connected by a connecting portion,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
The second substrate is arranged in correspondence with the photoelectric conversion element, and receives a signal generated by the corresponding photoelectric conversion element via one of the corresponding connection portions to one of the source and the drain. From the other side, a readout transistor that outputs as an analog readout signal;
A plurality of pixels each having a pixel portion, and
A signal processing circuit that performs signal processing on the read signal and converts the signal into a digital signal corresponding to the read signal;
With
The signal processing circuit includes:
A first signal processing circuit disposed on the first substrate and performing analog signal processing on the read signal;
A second signal processing circuit that is disposed on the second substrate and performs digital signal processing on a read signal that has been subjected to analog signal processing by the first signal processing circuit;
Comprising
An imaging apparatus characterized by that. An imaging apparatus in which a first substrate and a second substrate are electrically connected by a connecting portion,
A photoelectric conversion element disposed on the first substrate and generating a signal corresponding to the amount of incident light;
The second substrate is arranged in correspondence with the photoelectric conversion element, and receives a signal generated by the corresponding photoelectric conversion element via one of the corresponding connection portions to one of the source and the drain. From the other side, a readout transistor that outputs as an analog readout signal;
A plurality of pixels each having a pixel portion, and
A signal processing circuit for performing signal processing on the read signal;
With
The signal processing circuit includes:
A first signal processing circuit disposed on the first substrate and driven by a power supply voltage higher than a predetermined reference value;
A second signal processing circuit disposed on the second substrate and driven by a power supply voltage lower than the predetermined reference value;
Comprising
An imaging apparatus characterized by that.

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