JP5996382B2 - 切削装置のチャックテーブル - Google Patents
切削装置のチャックテーブル Download PDFInfo
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- JP5996382B2 JP5996382B2 JP2012244901A JP2012244901A JP5996382B2 JP 5996382 B2 JP5996382 B2 JP 5996382B2 JP 2012244901 A JP2012244901 A JP 2012244901A JP 2012244901 A JP2012244901 A JP 2012244901A JP 5996382 B2 JP5996382 B2 JP 5996382B2
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- cutting
- chuck table
- dressing board
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- holding
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- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000009966 trimming Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 12
- 238000005498 polishing Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
- B23Q3/06—Work-clamping means
- B23Q3/08—Work-clamping means other than mechanically-actuated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Jigs For Machine Tools (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
図1は、実施形態1に係るチャックテーブルを有する切削装置の構成例を示す図である。
次に、実施形態2に係る切削装置1のチャックテーブル30について説明する。実施形態2に係る切削装置1のチャックテーブル30の基本的構成は、実施形態1に係る切削装置1のチャックテーブル30と同様であるので、同一部分の構成の説明は省略する。図6は、実施形態2に係るチャックテーブルの構成例を示す図である。
30 チャックテーブル
31 環状保持部
31a 保持面
31b 吸引口
31c 吸引路
32 ドレッシングボード保持部
32a 保持面
32b,32c 吸引口
32d,32e 吸引路
33 基台部
34 排水溝
34a 溝底
34b,34c 排出口
40 撮像手段
50a,50b 切削手段
51a,51b 切削ブレード
91 吸引源
DB ドレッシングボード
L ドレッシング加工液
W 被加工物
Claims (2)
- 切削ブレードを有する切削手段で円板形状の被加工物の表面から該被加工物の外周縁を切削して除去する際に当該被加工物を裏面側から吸引保持する切削装置のチャックテーブルであって、
前記被加工物の外周部を環状の保持面で吸引保持する環状保持部と、
前記環状保持部の内周側で該環状保持部と同心状に配置され、ドレッシングボードを保持面で吸引保持するドレッシングボード保持部と、
前記環状保持部と前記ドレッシングボード保持部とがそれぞれ立設する基台部と、を有し、
前記ドレッシングボード保持部及び前記環状保持部は、それぞれの保持面に開口する吸引口と、一端が前記吸引口に連通するとともに他端が吸引源に接続される吸引路と、を備え、
前記環状保持部と前記ドレッシングボード保持部との間には、排水溝が形成され、
前記排水溝の溝底には、前記基台部の外部に貫通する排出口が配設され、
前記排水溝に流入するドレッシング加工液が前記排出口から排出される切削装置のチャックテーブル。 - 前記ドレッシングボード保持部の前記保持面は、前記環状保持部の前記保持面以下の高さに形成された請求項1記載の切削装置のチャックテーブル。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012244901A JP5996382B2 (ja) | 2012-11-06 | 2012-11-06 | 切削装置のチャックテーブル |
KR1020130132826A KR101995597B1 (ko) | 2012-11-06 | 2013-11-04 | 절삭 장치의 척테이블 |
CN201310540811.6A CN103811330B (zh) | 2012-11-06 | 2013-11-05 | 切削装置的卡盘工作台 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012244901A JP5996382B2 (ja) | 2012-11-06 | 2012-11-06 | 切削装置のチャックテーブル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014091206A JP2014091206A (ja) | 2014-05-19 |
JP5996382B2 true JP5996382B2 (ja) | 2016-09-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012244901A Active JP5996382B2 (ja) | 2012-11-06 | 2012-11-06 | 切削装置のチャックテーブル |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5996382B2 (ja) |
KR (1) | KR101995597B1 (ja) |
CN (1) | CN103811330B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6376852B2 (ja) * | 2014-06-11 | 2018-08-22 | 株式会社ディスコ | ドレッシングボードの保持治具 |
CN105529291A (zh) * | 2014-09-29 | 2016-04-27 | 盛美半导体设备(上海)有限公司 | 晶圆承接装置 |
JP6842859B2 (ja) | 2016-08-12 | 2021-03-17 | 株式会社荏原製作所 | ドレッシング装置、研磨装置、ホルダー、ハウジング及びドレッシング方法 |
JP7150390B2 (ja) * | 2018-02-14 | 2022-10-11 | 株式会社ディスコ | 加工装置 |
CN113172780B (zh) * | 2021-04-07 | 2022-06-03 | 郑州磨料磨具磨削研究所有限公司 | 一种碳化硅切割用划片结构及其在线修整方法 |
JP2023015782A (ja) * | 2021-07-20 | 2023-02-01 | 株式会社ディスコ | 加工装置 |
CN217577167U (zh) * | 2022-03-22 | 2022-10-14 | 天津市环智新能源技术有限公司 | 一种下料缓存台 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0516069A (ja) * | 1991-07-08 | 1993-01-26 | Sanshin Chem Ind Co Ltd | メタルボンド砥石のケミカルドレツシング方法及びその装置 |
JP3287761B2 (ja) * | 1995-06-19 | 2002-06-04 | 日本電信電話株式会社 | 真空吸着装置および加工装置 |
JP3515917B2 (ja) * | 1998-12-01 | 2004-04-05 | シャープ株式会社 | 半導体装置の製造方法 |
JP5226394B2 (ja) * | 2008-06-16 | 2013-07-03 | 株式会社ディスコ | フランジの端面修正方法 |
JP5254679B2 (ja) | 2008-06-23 | 2013-08-07 | 株式会社ディスコ | 切削ブレードのドレス方法 |
JP5242348B2 (ja) * | 2008-11-12 | 2013-07-24 | 株式会社ディスコ | 加工装置 |
JP5349982B2 (ja) * | 2009-01-14 | 2013-11-20 | 株式会社ディスコ | サブストレート付きウエーハの加工方法 |
KR101359070B1 (ko) * | 2009-03-03 | 2014-02-05 | 도쿄엘렉트론가부시키가이샤 | 탑재대 구조, 성막 장치 및 원료 회수 방법 |
JP2011183501A (ja) * | 2010-03-08 | 2011-09-22 | Disco Corp | 切削ブレードのドレッシング方法 |
JP2012038840A (ja) * | 2010-08-05 | 2012-02-23 | Renesas Electronics Corp | 半導体製造装置および半導体装置の製造方法 |
JP2012108397A (ja) | 2010-11-19 | 2012-06-07 | Nippon Seiki Co Ltd | 表示装置 |
JP5999972B2 (ja) * | 2012-05-10 | 2016-09-28 | 株式会社ディスコ | 保持テーブル |
-
2012
- 2012-11-06 JP JP2012244901A patent/JP5996382B2/ja active Active
-
2013
- 2013-11-04 KR KR1020130132826A patent/KR101995597B1/ko active IP Right Grant
- 2013-11-05 CN CN201310540811.6A patent/CN103811330B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101995597B1 (ko) | 2019-07-02 |
CN103811330B (zh) | 2017-09-29 |
CN103811330A (zh) | 2014-05-21 |
JP2014091206A (ja) | 2014-05-19 |
KR20140058368A (ko) | 2014-05-14 |
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