JP5987930B2 - Conductive paste for laser etching, electrical circuit and touch panel - Google Patents
Conductive paste for laser etching, electrical circuit and touch panel Download PDFInfo
- Publication number
- JP5987930B2 JP5987930B2 JP2015019054A JP2015019054A JP5987930B2 JP 5987930 B2 JP5987930 B2 JP 5987930B2 JP 2015019054 A JP2015019054 A JP 2015019054A JP 2015019054 A JP2015019054 A JP 2015019054A JP 5987930 B2 JP5987930 B2 JP 5987930B2
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- Prior art keywords
- resin
- laser
- touch panel
- conductive paste
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
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- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
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- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
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- 150000002791 naphthoquinones Chemical class 0.000 description 1
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
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- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical compound C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000001007 phthalocyanine dye Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Chemical class 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000001057 purple pigment Substances 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical compound O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical class C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical compound C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
- 239000001008 quinone-imine dye Substances 0.000 description 1
- 239000001054 red pigment Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- CLZWAWBPWVRRGI-UHFFFAOYSA-N tert-butyl 2-[2-[2-[2-[bis[2-[(2-methylpropan-2-yl)oxy]-2-oxoethyl]amino]-5-bromophenoxy]ethoxy]-4-methyl-n-[2-[(2-methylpropan-2-yl)oxy]-2-oxoethyl]anilino]acetate Chemical compound CC1=CC=C(N(CC(=O)OC(C)(C)C)CC(=O)OC(C)(C)C)C(OCCOC=2C(=CC=C(Br)C=2)N(CC(=O)OC(C)(C)C)CC(=O)OC(C)(C)C)=C1 CLZWAWBPWVRRGI-UHFFFAOYSA-N 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- JOUDBUYBGJYFFP-FOCLMDBBSA-N thioindigo Chemical compound S\1C2=CC=CC=C2C(=O)C/1=C1/C(=O)C2=CC=CC=C2S1 JOUDBUYBGJYFFP-FOCLMDBBSA-N 0.000 description 1
- 150000007944 thiolates Chemical class 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- NUBZKXFFIDEZKG-UHFFFAOYSA-K trisodium;5-sulfonatobenzene-1,3-dicarboxylate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)C1=CC(C([O-])=O)=CC(S([O-])(=O)=O)=C1 NUBZKXFFIDEZKG-UHFFFAOYSA-K 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- KLNPWTHGTVSSEU-UHFFFAOYSA-N undecane-1,11-diamine Chemical compound NCCCCCCCCCCCN KLNPWTHGTVSSEU-UHFFFAOYSA-N 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
- 239000001052 yellow pigment Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/0929—Conductive planes
- H05K2201/09363—Conductive planes wherein only contours around conductors are removed for insulation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Human Computer Interaction (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Non-Insulated Conductors (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Electric Cables (AREA)
- Paints Or Removers (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
本発明は、平面方向の配置密度が高い導電性パターンを製造することができる導電性パターンの製造方法およびこの製造方法に好適に用いることのできる導電性ペーストに関する。本発明の導電性パターンは、典型的には透明タッチパネルの電極回路配線に用いることができる。 The present invention relates to a method for producing a conductive pattern capable of producing a conductive pattern having a high arrangement density in a planar direction, and a conductive paste that can be suitably used for this production method. The conductive pattern of the present invention can typically be used for electrode circuit wiring of a transparent touch panel.
近年、携帯電話や、ノートパソコン、電子書籍などに代表される透明タッチパネルを搭載する電子機器の高性能化と小型化が急激に進んでいる。これらの電子機器の高性能化と小型化には、搭載される電子部品の小型化、高性能化、集積度の向上に加え、これら電子部品相互を接合する電極回路配線の高密度化が求められている。透明タッチパネルの方式として電極回路配線の数が少ない抵抗膜方式に加え、電極回路配線の数が飛躍的に多い静電容量方式の普及が近年急速に進んでおり、このような観点から電極回路配線の高密度化が強く求められている。また、ディスプレイ画面をより大きくするために、また商品デザイン上の要求により、電極回路配線が配置される額縁部をより狭くしたいとの要求があり、このような観点からも電極回路配線の高密度化が求められている。以上のような要求を満たすために、従来以上の電極回路配線の高密度配置を行うことができる技術が求められている。 In recent years, electronic devices equipped with a transparent touch panel typified by a mobile phone, a notebook personal computer, an electronic book, and the like are rapidly increasing in performance and size. In order to improve the performance and miniaturization of these electronic devices, it is necessary to increase the density of the electrode circuit wiring that joins these electronic components in addition to the reduction in size, performance, and integration of the electronic components. It has been. As a transparent touch panel method, in addition to the resistive film method with a small number of electrode circuit wirings, the use of a capacitive method with a remarkably large number of electrode circuit wirings has been rapidly spreading in recent years. High density is strongly demanded. In addition, in order to make the display screen larger and due to demands on product design, there is a demand for a narrower frame portion on which the electrode circuit wiring is arranged. From this viewpoint, the density of the electrode circuit wiring is high. Is required. In order to satisfy the above requirements, there is a demand for a technique capable of performing higher-density arrangement of electrode circuit wiring than in the past.
抵抗膜方式の透明タッチパネルの額縁部分の電極回路配線の配置密度は、平面方向のラインとスペースの幅が各々200μm(以下、L/S=200/200μmというように略記する)以上程度であり、これを導電性ペーストのスクリーン印刷によって形成することが従来から行われている。静電容量方式のタッチパネルでは、L/Sの要求は100/100μm程度以下となっており、さらにはL/Sが50/50μm以下を求められる場合もあり、スクリーン印刷による電極回路配線形成技術では対応困難な状況になりつつある。 The arrangement density of the electrode circuit wiring in the frame part of the transparent touch panel of the resistive film type is about 200 μm (hereinafter abbreviated as L / S = 200/200 μm) in the width of the line and the space in the plane direction. Conventionally, this is formed by screen printing of a conductive paste. In the capacitive touch panel, the L / S requirement is about 100/100 μm or less, and there are cases where the L / S is required to be 50/50 μm or less. The situation is becoming difficult to deal with.
スクリーン印刷に替わる電極回路配線形成技術の候補の一例として、フォトリソグラフィ法が挙げられる。フォトリソグラフィ法を用いれば、L/Sが50/50μm以下の細線を形成することも十分に可能である。しかしながらフォトリソグラフィ法にも課題がある。フォトリソグラフィ法の最も典型的な事例は感光性レジストを用いる手法であり、一般的には、銅箔層を形成した表面基板の銅箔部位に感光性レジストを塗布し、フォトマスクあるいはレーザー光の直接描画等の方法により所望のパターンを露光し、感光性レジストの現像を行ない、その後、所望のパターン以外の銅箔部位を薬品で溶解・除去することにより、銅箔の細線パターンを形成させる。このため、廃液処理による環境負荷が大きく、さらには工程が煩雑であり、生産効率の観点、コスト的観点を含め多くの課題を抱えている。 As an example of a candidate electrode circuit wiring forming technique that replaces screen printing, a photolithography method can be given. If a photolithography method is used, it is possible to form a thin line having an L / S of 50/50 μm or less. However, there are also problems with photolithography. The most typical example of photolithography is a method using a photosensitive resist. Generally, a photosensitive resist is applied to a copper foil portion of a surface substrate on which a copper foil layer is formed, and a photomask or a laser beam is used. A desired pattern is exposed by a method such as direct drawing, the photosensitive resist is developed, and then a copper foil portion other than the desired pattern is dissolved and removed with a chemical to form a fine line pattern of the copper foil. For this reason, the environmental load by waste liquid processing is large, and also the process is complicated, and it has many problems including the viewpoint of production efficiency and the viewpoint of cost.
本発明の目的は、スクリーン印刷法では対応困難とされているL/Sが50/50μm以下のタッチパネル用高密度電極回路配線を、低コストかつ低い環境負荷で製造することができる製造方法を提供することにある。また、このような製造方法に好適に用いることのできる導電性ペーストを提供することにある。 An object of the present invention is to provide a manufacturing method capable of manufacturing high-density electrode circuit wiring for a touch panel having an L / S of 50/50 μm or less, which is difficult to cope with by a screen printing method, at low cost and with low environmental load. There is to do. Moreover, it is providing the electrically conductive paste which can be used suitably for such a manufacturing method.
本発明者らは平面方向に高密度で電極回路配線を配置する製造方法について鋭意検討した結果、バインダ樹脂と導電粉体からなる層を、透明導電層を有する基材上、もしくは透明導電層を有し該透明導電層がエッチングによって一部除去された基材上に形成し、その一部をレーザー光照射により絶縁性基材上から除去することにより、スクリーン印刷法では実現困難なL/Sが50/50μm以下の高密度電極回路配線を製造することができることを見出した。また、このような製造方法に適するバインダ樹脂と導電粉体からなる層を形成するのに適する導電性ペーストを見出した。すなわち、本願発明は以下の構成からなるものである。
(1)熱可塑性樹脂からなるバインダ樹脂(A)、金属粉(B)および有機溶剤(C)を含有し、前記バインダ樹脂(A)が、数平均分子量が5,000〜60,000であり、なおかつ、ガラス転移温度が150℃以下である熱可塑性樹脂であり、前記金属粉(B)の中心径(D50)が4μm以下であり、
レーザーエッチング加工によりL/Sが50/50μm以下のタッチパネルの回路配線を、透明導電層を有する基材上、もしくは透明導電層を有し該透明導電層がエッチングによって一部除去された基材上に形成するために用いられるレーザーエッチング加工用導電性ペースト。
(2)前記バインダ樹脂(A)が、ガラス転移温度が60〜100℃である熱可塑性樹脂であることを特徴とする、(1)に記載のタッチパネルの回路配線を形成するために用いられるレーザーエッチング加工用導電性ペースト。
(3)前記バインダ樹脂(A)が、ポリエステル樹脂、ポリウレタン樹脂、エポキシ樹脂、塩化ビニル樹脂、繊維素誘導体樹脂からなる群から選ばれる1種又は2種以上の混合物であることを特徴とする(1)または(2)に記載のタッチパネルの回路配線を形成するために用いられるレーザーエッチング加工用導電性ペースト。
(4)前記バインダ樹脂(A)が、酸価50〜300当量/106gであるポリエステル樹脂および酸価50〜300当量/106gであるポリウレタン樹脂からなる群から選ばれる1種又は2種以上の混合物であることを特徴とする(1)または(2)に記載のタッチパネルの回路配線を形成するために用いられるレーザーエッチング加工用導電性ペースト。
(5)更にレーザー光吸収剤(D)を含有することを特徴とする(1)〜(4)のいずれかに記載のタッチパネルの回路配線を形成するために用いられるレーザーエッチング加工用導電性ペースト。
(6)前記(1)〜(5)のいずれかに記載のレーザーエッチング加工用導電性ペーストから形成された導電性薄膜の一部に、炭酸ガスレーザー、YAGレーザー、ファイバーレーザーおよび半導体レーザーから選ばれるレーザー光を照射して、前記導電性薄膜の一部を除去することによって形成されたL/Sが50/50μm以下の回路配線を有するタッチパネル用電気回路の製造方法。
(7)前記導電性薄膜が透明導電性層上に形成されていることを特徴とする(6)に記載のタッチパネル用電気回路の製造方法。
(8)前記(6)〜(7)のいずれかに記載の電気回路の製造方法により形成された電気回路を構成部材として含むタッチパネルの製造方法。
(9)前記(1)〜(5)のいずれかに記載の導電性ペーストを用いて基材上に塗膜を形成し、次いで該塗膜を乾燥させた後にレーザーエッチング加工によりL/Sが50/50μm以下の回路配線を形成することを特徴とする、タッチパネル用回路配線の製造方法。
(10)前記(9)に記載の前記塗膜を乾燥させた後の膜厚が3μm以上、30μm以下であることを特徴とする、(9)に記載のタッチパネル用回路配線の製造方法。
(11)前記レーザーエッチング加工におけるレーザー光の走査速度が、1000mm/s以上であることを特徴とする、(9)〜(10)のいずれかに記載のタッチパネル用回路配線の製造方法。
(12)前記回路配線が透明導電性層を有する基材上に形成されていることを特徴とする(9)〜(11)のいずれかに記載のタッチパネル用回路配線の製造方法。
As a result of intensive studies on a manufacturing method for arranging electrode circuit wiring at a high density in the planar direction, the present inventors have found that a layer composed of a binder resin and conductive powder is formed on a substrate having a transparent conductive layer or a transparent conductive layer. The transparent conductive layer is formed on a substrate partially removed by etching, and a part of the transparent conductive layer is removed from the insulating substrate by laser light irradiation. It was found that a high-density electrode circuit wiring with a thickness of 50/50 μm or less can be produced. Moreover, the electroconductive paste suitable for forming the layer which consists of binder resin and electroconductive powder suitable for such a manufacturing method was discovered. That is, this invention consists of the following structures.
(1) It contains a binder resin (A) made of a thermoplastic resin, a metal powder (B) and an organic solvent (C), and the binder resin (A) has a number average molecular weight of 5,000 to 60,000. In addition, a thermoplastic resin having a glass transition temperature of 150 ° C. or less, and a center diameter (D50) of the metal powder (B) is 4 μm or less,
Touch panel circuit wiring with a L / S of 50/50 μm or less by laser etching processing on a substrate having a transparent conductive layer, or on a substrate having a transparent conductive layer and the transparent conductive layer partially removed by etching Conductive paste for laser etching process used to form in.
(2) The laser used for forming the circuit wiring of the touch panel according to (1), wherein the binder resin (A) is a thermoplastic resin having a glass transition temperature of 60 to 100 ° C. Conductive paste for etching process.
(3) The binder resin (A) is one or a mixture of two or more selected from the group consisting of a polyester resin, a polyurethane resin, an epoxy resin, a vinyl chloride resin, and a fiber derivative resin ( A conductive paste for laser etching used for forming the circuit wiring of the touch panel according to 1) or (2).
(4) the binder resin (A) is an acid value 50-300 equivalents / 10 6 g one or two selected from the group consisting of polyester resin and an acid number of 50 to 300 polyurethane resin is equivalent / 10 6 g is The conductive paste for laser etching used for forming the circuit wiring of the touch panel according to (1) or (2), which is a mixture of seeds or more.
(5) The conductive paste for laser etching used for forming the circuit wiring of the touch panel according to any one of (1) to (4), further comprising a laser light absorber (D) .
(6) A part of the conductive thin film formed from the conductive paste for laser etching according to any one of (1) to (5) is selected from a carbon dioxide gas laser, a YAG laser, a fiber laser, and a semiconductor laser. Of touch panel electric circuit having circuit wiring with L / S of 50/50 μm or less formed by irradiating laser beam to remove a part of the conductive thin film.
(7) The method for manufacturing an electric circuit for a touch panel according to (6), wherein the conductive thin film is formed on a transparent conductive layer.
(8) A method for manufacturing a touch panel including, as a constituent member, an electric circuit formed by the method for manufacturing an electric circuit according to any one of (6) to (7).
(9) A coating film is formed on a substrate using the conductive paste according to any one of (1) to (5), and then the coating film is dried, and then L / S is reduced by laser etching. A method of manufacturing a circuit wiring for a touch panel, comprising forming a circuit wiring of 50/50 μm or less.
(10) The method for producing a circuit wiring for a touch panel according to (9), wherein the film thickness after drying the coating film according to (9) is 3 μm or more and 30 μm or less.
(11) The method of manufacturing a circuit wiring for a touch panel according to any one of (9) to (10), wherein a scanning speed of laser light in the laser etching process is 1000 mm / s or more.
(12) The method for manufacturing a circuit wiring for a touch panel according to any one of (9) to (11), wherein the circuit wiring is formed on a base material having a transparent conductive layer.
本発明の導電性ペーストは、熱可塑性樹脂からなるバインダ樹脂(A)、金属粉(B)および有機溶剤(C)を含有する導電性ペーストであり、このような構成をとることによって、レーザーエッチング加工適性に優れ、なおかつレーザーエッチング加工後においても基材に対する初期および湿熱環境負荷後の密着性に優れる導電性薄膜を形成することができる。なおここで、レーザーエッチング加工適性に優れるとは、レーザーエッチング加工により導電性薄膜の少なくとも一部を基材から剥離させ、L/S=30/30μm程度の細線を形成させたときに、1)細線両端間の導通が確保され、2)隣接細線間の絶縁が確保され、3)細線形状が良好であること、の3条件を満たすことを指す。また、本発明の実施態様であるレーザー光吸収剤(D)を含有する導電性ペーストは、レーザー光吸収剤(D)を含有しない導電性ペーストよりもレーザー光照射による対する感度が高くなるので、レーザー走査速度の向上、レーザー出力の低減等が可能となる、との更に優れた効果をも発揮する。 The conductive paste of the present invention is a conductive paste containing a binder resin (A) made of a thermoplastic resin, a metal powder (B) and an organic solvent (C). By taking such a configuration, laser etching is performed. It is possible to form a conductive thin film that is excellent in processing suitability and excellent in adhesion to the substrate at the initial stage and after a wet heat environment load even after laser etching. In addition, it is excellent in laser etching process suitability here, when peeling at least one part of an electroconductive thin film from a base material by laser etching process, and forming a thin wire | line about L / S = 30/30 micrometers 1) It refers to satisfying the three conditions of ensuring conduction between both ends of the fine wire, 2) ensuring insulation between adjacent fine wires, and 3) having a good fine wire shape. Moreover, since the conductive paste containing the laser light absorber (D) according to the embodiment of the present invention has higher sensitivity to laser light irradiation than the conductive paste not containing the laser light absorber (D), The laser scanning speed can be improved and the laser output can be reduced.
<<本発明の導電性ペーストを構成する成分>>
本発明におけるレーザーエッチング加工用導電性ペーストは、熱可塑性樹脂からなるバインダ樹脂(A)、金属粉(B)および有機溶剤(C)を必須成分として含有する。
<< Components constituting the conductive paste of the present invention >>
The conductive paste for laser etching according to the present invention contains a binder resin (A) made of a thermoplastic resin, a metal powder (B), and an organic solvent (C) as essential components.
<バインダ樹脂(A)>
バインダ樹脂(A)の種類は熱可塑性樹脂であれば特に限定されないが、ポリエステル樹脂、エポキシ樹脂、フェノキシ樹脂、ポリアミド樹脂、ポリアミドイミド樹脂、ポリカーボネート樹脂、ポリウレタン樹脂、フェノール樹脂、アクリル樹脂、ポリスチレン、スチレンーアクリル樹脂、スチレンーブタジエン共重合体、フェノール樹脂、ポリエチレン系樹脂、ポリカーボネート系樹脂、フェノール樹脂、アルキッド樹脂、スチレンーアクリル樹脂、スチレンーブタジエン共重合樹脂、ポリスルホン樹脂、ポリエーテルスルホン樹脂、塩化ビニル−酢酸ビニル共重合樹脂、エチレン−酢酸ビニル共重合、ポリスチレン、シリコーン樹脂、フッ素系樹脂等を挙げることができ、これらの樹脂は単独で、あるいは2種以上の混合物として、使用することができる。ポリエステル樹脂、ポリウレタン樹脂、エポキシ樹脂、塩化ビニル樹脂、繊維素誘導体樹脂からなる群から選ばれる1種又は2種以上の混合物であることが好ましい。また、これらの樹脂の中でも、ポリエステル樹脂および/またはポリエステル成分を共重合成分として含有するポリウレタン樹脂(以下ポリエステルポリウレタン樹脂と呼ぶ場合がある)が、バインダ樹脂(A)として好ましい。
<Binder resin (A)>
The type of binder resin (A) is not particularly limited as long as it is a thermoplastic resin. However, polyester resin, epoxy resin, phenoxy resin, polyamide resin, polyamideimide resin, polycarbonate resin, polyurethane resin, phenol resin, acrylic resin, polystyrene, styrene -Acrylic resin, styrene-butadiene copolymer, phenol resin, polyethylene resin, polycarbonate resin, phenol resin, alkyd resin, styrene-acrylic resin, styrene-butadiene copolymer resin, polysulfone resin, polyethersulfone resin, vinyl chloride -Vinyl acetate copolymer resin, ethylene-vinyl acetate copolymer, polystyrene, silicone resin, fluorine resin, etc. can be mentioned, and these resins are used alone or as a mixture of two or more. Rukoto can. It is preferably one or a mixture of two or more selected from the group consisting of polyester resins, polyurethane resins, epoxy resins, vinyl chloride resins, and fiber derivative resins. Among these resins, a polyurethane resin containing a polyester resin and / or a polyester component as a copolymer component (hereinafter sometimes referred to as a polyester polyurethane resin) is preferable as the binder resin (A).
本発明におけるバインダ樹脂(A)としてポリエステル樹脂を用いることの利点の一つとして、分子設計の自由度の高さにある。ポリエステル樹脂を構成するジカルボン酸およびグリコール成分を選定し、共重合成分を自在に変化させることができ、また、分子鎖中、もしくは分子末端への官能基の付与も容易である。このため、得られるポリエステル樹脂のガラス転移温度や基材および導電性ペーストに配合される他の成分との親和性等の樹脂の特性を適宜調整することができる。 One advantage of using a polyester resin as the binder resin (A) in the present invention is the high degree of freedom in molecular design. The dicarboxylic acid and glycol components constituting the polyester resin can be selected and the copolymerization component can be freely changed, and the functional group can be easily added in the molecular chain or at the molecular end. For this reason, the characteristics of the resin such as the glass transition temperature of the polyester resin to be obtained and the affinity with other components blended in the base material and the conductive paste can be appropriately adjusted.
本発明におけるバインダ樹脂(A)として用いられるポリエステル樹脂の共重合成分として使用することのできるジカルボン酸の例としては、テレフタル酸、イソフタル酸、オルソフタル酸、2,6−ナフタレンジカルボン酸等の芳香族ジカルボン酸、コハク酸、グルタル酸、アジピン酸、セバシン酸、ドデカンジカルボン酸、アゼライン酸等の脂肪族ジカルボン酸、ダイマー酸等の炭素数12〜28の二塩基酸、1,4−シクロヘキサンジカルボン酸、1,3−シクロヘキサンジカルボン酸、1,2−シクロヘキサンジカルボン酸、4−メチルヘキサヒドロ無水フタル酸、3−メチルヘキサヒドロ無水フタル酸、2−メチルヘキサヒドロ無水フタル酸、ジカルボキシ水素添加ビスフェノールA、ジカルボキシ水素添加ビスフェノールS、ダイマー酸、水素添加ダイマー酸、水素添加ナフタレンジカルボン酸、トリシクロデカンジカルボン酸等の脂環族ジカルボン酸、ヒドロキシ安息香酸、乳酸等のヒドロキシカルボン酸を挙げることができる。また、発明の効果を損なわない範囲で、無水トリメリット酸、無水ピロメリット酸等の三価以上のカルボン酸、フマール酸等の不飽和ジカルボン酸、および/または、5−スルホイソフタル酸ナトリウム塩等のスルホン酸金属塩基含有ジカルボン酸を共重合成分として併用してもよい。 Examples of the dicarboxylic acid that can be used as a copolymer component of the polyester resin used as the binder resin (A) in the present invention include aromatics such as terephthalic acid, isophthalic acid, orthophthalic acid, and 2,6-naphthalenedicarboxylic acid. Dicarboxylic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedicarboxylic acid, aliphatic dicarboxylic acid such as azelaic acid, dibasic acid having 12 to 28 carbon atoms such as dimer acid, 1,4-cyclohexanedicarboxylic acid, 1,3-cyclohexanedicarboxylic acid, 1,2-cyclohexanedicarboxylic acid, 4-methylhexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 2-methylhexahydrophthalic anhydride, dicarboxyhydrogenated bisphenol A, Dicarboxy hydrogenated bisphenol S, da Mer acid, hydrogenated dimer acid, hydrogenated naphthalenedicarboxylic acid, alicyclic dicarboxylic acids such as tricyclodecane acid, hydroxybenzoic acid, and hydroxycarboxylic acids such as lactic acid. Further, within the range not impairing the effects of the invention, trivalent or higher carboxylic acids such as trimellitic anhydride and pyromellitic anhydride, unsaturated dicarboxylic acids such as fumaric acid, and / or 5-sulfoisophthalic acid sodium salt, etc. The sulfonic acid metal base-containing dicarboxylic acid may be used as a copolymerization component.
本発明におけるバインダ樹脂(A)として用いられるポリエステル樹脂の共重合成分として使用することのできるポリオールの例としては、エチレングリコール、プロピレングリコール、1,3−プロパンジオール、1,4−ブタンジオール、1,5−ペンタンジオール、ネオペンチルグリコール、1,6−ヘキサンジオール、3−メチル−1,5−ペンタンジオール、2−メチル−1,5−ペンタンジオール、2−メチル−1,3−プロパンジオール、2,2−ジエチル−1,3−プロパンジオール、2−ブチル−2−エチル−1,3−プロパンジオール、1,9−ノナンジオール、1,10−デカンジオール等の脂肪族ジオール、1,4−シクロヘキサンジメタノール、1,3−シクロヘキサンジメタノール、1,2−シクロヘキサンジメタノール、ダイマージオール等の脂環族ジオールが挙げられる。また、発明の効果を損なわない範囲でトリメチロールエタン、トリメチロールプロパン、グリセリン、ペンタエリスリトール、ポリグリセリン等の三価以上のポリオールを共重合成分として併用してもよい。 Examples of polyols that can be used as a copolymer component of the polyester resin used as the binder resin (A) in the present invention include ethylene glycol, propylene glycol, 1,3-propanediol, 1,4-butanediol, , 5-pentanediol, neopentyl glycol, 1,6-hexanediol, 3-methyl-1,5-pentanediol, 2-methyl-1,5-pentanediol, 2-methyl-1,3-propanediol, Aliphatic diols such as 2,2-diethyl-1,3-propanediol, 2-butyl-2-ethyl-1,3-propanediol, 1,9-nonanediol, 1,10-decanediol, 1,4 -Cyclohexanedimethanol, 1,3-cyclohexanedimethanol, 1,2-cyclohexanedim Ethanol, and alicyclic diol and dimer diol. In addition, trivalent or higher polyols such as trimethylolethane, trimethylolpropane, glycerin, pentaerythritol, polyglycerin and the like may be used in combination as a copolymerization component as long as the effects of the invention are not impaired.
本発明におけるバインダ樹脂(A)として用いられるポリエステル樹脂は、強度や耐熱性、耐湿性、及び耐熱衝撃性等の耐久性等の観点から、前記ポリエステル樹脂を構成する全酸成分のうち芳香族ジカルボン酸が60モル%以上共重合されていることが好ましく、より好ましくは80モル%以上、さらに好ましくは90モル%以上、特に好ましくは98モル%以上である。全酸成分が芳香族ジカルボン酸からなることは好ましい実施態様である。芳香族ジカルボン酸成分の共重合比率が低すぎると、得られるポリエステル樹脂のガラス転移温度が60℃より低くなり、得られる導電性薄膜の耐湿熱性、耐久性が低下する傾向にある。 The polyester resin used as the binder resin (A) in the present invention is an aromatic dicarboxylic acid among all acid components constituting the polyester resin from the viewpoints of durability such as strength, heat resistance, moisture resistance, and thermal shock resistance. The acid is preferably copolymerized in an amount of 60 mol% or more, more preferably 80 mol% or more, still more preferably 90 mol% or more, and particularly preferably 98 mol% or more. It is a preferred embodiment that the total acid component consists of an aromatic dicarboxylic acid. If the copolymerization ratio of the aromatic dicarboxylic acid component is too low, the glass transition temperature of the resulting polyester resin will be lower than 60 ° C., and the heat and humidity resistance and durability of the resulting conductive thin film will tend to be reduced.
本発明におけるバインダ樹脂(A)として用いられるポリエステル樹脂は、強度や耐熱性、耐湿性、及び耐熱衝撃性等の耐久性等の観点から、前記ポリエステル樹脂を構成する全ポリオールのうち主鎖の炭素数が4以下であるグリコールが60モル%以上であることが好ましく、80モル%以上であることがより好ましく、95モル%以上であることがさらに好ましい。全ポリオール成分の内、主鎖の炭素数が4以下であるグリコールの共重合比率が低すぎると得られるポリウレタン樹脂のガラス転移温度が60℃より低くなり、得られる導電性薄膜の耐湿熱性、耐久性が低下する傾向にある。 The polyester resin used as the binder resin (A) in the present invention is a main chain carbon among all polyols constituting the polyester resin from the viewpoint of durability such as strength, heat resistance, moisture resistance, and thermal shock resistance. The number of glycols having 4 or less is preferably 60 mol% or more, more preferably 80 mol% or more, and further preferably 95 mol% or more. When the copolymerization ratio of glycol having 4 or less carbon atoms in the main chain among all polyol components is too low, the glass transition temperature of the resulting polyurethane resin is lower than 60 ° C., and the resulting conductive thin film has heat and heat resistance and durability. Tend to decrease.
本発明におけるバインダ樹脂(A)としてポリウレタン樹脂を用いることも好ましい実施態様である。ポリエステル樹脂の場合と同様、ポリウレタン樹脂に関しても、ポリウレタン樹脂を構成する共重合成分として適切な成分を選定し、また、分子鎖中、もしくは分子末端への官能基の付与をおこなうことにより、ガラス転移温度や基材および導電性ペーストに配合される他の成分との親和性等の樹脂の特性を適宜調整することができる。 It is also a preferred embodiment to use a polyurethane resin as the binder resin (A) in the present invention. As in the case of polyester resins, with regard to polyurethane resins, glass transition can be achieved by selecting appropriate components as copolymer components that make up polyurethane resins, and by adding functional groups in the molecular chain or at the molecular ends. Resin properties such as temperature and affinity with other components blended in the substrate and the conductive paste can be appropriately adjusted.
ポリウレタン樹脂の共重合成分に関しても特に限定はされないが、設計の自由度や耐湿熱性、耐久性の維持といった観点から、ポリエステルポリオールを共重合成分として用いるポリエステルポリウレタン樹脂であることが好ましい。前記ポリエステルポリオールの好適な例としては、前述の本発明におけるバインダ樹脂(A)として用いることのできるポリエステル樹脂のうちポリオールであるものを挙げることができる。 The copolymer component of the polyurethane resin is not particularly limited, but is preferably a polyester polyurethane resin using a polyester polyol as a copolymer component from the viewpoint of freedom of design, heat and humidity resistance, and maintenance of durability. As a suitable example of the said polyester polyol, what is a polyol among the polyester resins which can be used as binder resin (A) in the above-mentioned this invention can be mentioned.
本発明におけるバインダ樹脂(A)として用いられるポリウレタン樹脂は、例えばポリオールとポリイソシアネートの反応によって得ることができる。前記ポリウレタン樹脂の共重合成分として用いることのできるポリイソシアネートとしては、2,4−トリレンジイソシアネート、2,6−トリレンジイソシアネート、p−フェニレンジイソシアネート、4,4’−ジフェニルメタンジイソシアネート、m−フェニレンジイソシアネート、3,3’−ジメトキシ−4,4’−ビフェニレンジイソシアネート、2,6−ナフタレンジイソシアネート、3,3’−ジメチル−4,4’−ビフェニレンジイソシアネート、4,4’−ジフェニレンジイソシアネート、4,4’−ジイソシアネートジフェニルエーテル、1,5−ナフタレンジイソシアネート、m−キシレンジイソシアネート、イソホロンジイソシアネート、テトラメチレンジイソシアネート、ヘキサメチレンジイソシアネート、トルエンジイソシアネート等を挙げることがで、芳香族ジイソシアネート、脂肪族ジイソシアネートおよび脂環族ジイソシアネートのいずれであっても良い。また、本発明の効果を損なわない範囲で、三価以上のイソシアネート化合物を共重合成分として併用しても良い。 The polyurethane resin used as the binder resin (A) in the present invention can be obtained, for example, by a reaction between a polyol and a polyisocyanate. The polyisocyanate that can be used as a copolymerization component of the polyurethane resin includes 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, p-phenylene diisocyanate, 4,4′-diphenylmethane diisocyanate, m-phenylene diisocyanate. 3,3′-dimethoxy-4,4′-biphenylene diisocyanate, 2,6-naphthalene diisocyanate, 3,3′-dimethyl-4,4′-biphenylene diisocyanate, 4,4′-diphenylene diisocyanate, 4,4 '-Diisocyanate diphenyl ether, 1,5-naphthalene diisocyanate, m-xylene diisocyanate, isophorone diisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate, tolu De be mentioned down diisocyanate, aromatic diisocyanates, may be any of aliphatic diisocyanates and alicyclic diisocyanates. Moreover, you may use together a trivalent or more isocyanate compound as a copolymerization component in the range which does not impair the effect of this invention.
本発明におけるバインダ樹脂(A)として用いられるポリウレタン樹脂には、イソシアネートと反応し得る官能基を有する化合物を必要に応じて共重合することができる。イソシアネートと反応し得る官能基としては、水酸基及びアミノ基が好ましく、いずれか一方を有するものでも双方を有するものであっても良い。その具体的な例としては、ジメチロールブタン酸、ジメチロールプロピオン酸、1,2−プロピレングリコール、1,2−ブチレングリコール、1,3−ブチレングリコール、2,3−ブチレングリコール、2,2−ジメチル−1,3−プロパンジオール、3−メチル−1,5−ペンタンジオール、2,2,4−トリメチル−1,3−ペンタンジオール、2−エチル−1,3−ヘキサンジオール、2,2−ジメチル−3−ヒドロキシプロピル−2’,2’−ジメチル−3’−ヒドロキシプロパネート、2−ノルマルブチル−2−エチル−1,3−プロパンジオール、3−エチル−1,5−ペンタンジオール、3−プロピル−1,5−ペンタンジオール、2,2−ジエチル−1,3−プロパンジオール、3−オクチル−1,5−ペンタンジオール、3−フェニル−1,5−ペンタンジオール、2,5−ジメチル−3−ナトリウムスルホ−2,5−ヘキサンジオール、ダイマージオール(たとえば、ユニケマ・インターナショナル社製PRIPOOL−2033)等の1分子中に2個の水酸基を有する化合物、トリメチロールエタン、トリメチロールプロパン、グリセリン、ペンタエリスリトール、ポリグリセリン等の1分子中に3個以上の水酸基を有するアルコール、モノエタノールアミン、ジエタノールアミン、トリエタノールアミン等の1分子に1個以上の水酸基とアミノ基を有するアミノアルコール、エチレンジアミン、1,6−ヘキサンジアミン、1,8−オクタンジアミン、1,9−ノナンジアミン、1,10-デカンジアミン、1,11-ウンデカンジアミン、1,12-ドデカンジアミンなどの脂肪族ジアミンやメタキシレンジアミン、4,4’-ジアミノジフェニルメタン、3,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルエーテル等の芳香族ジアミンなどの1分子中に2個のアミノ基を有する化合物が挙げられる。上記の数平均分子量1,000未満の1分子に2個以上のイソシアネートと反応し得る官能基を有する化合物は単独で用いてもよいし複数を併用しても何ら問題はない。 In the polyurethane resin used as the binder resin (A) in the present invention, a compound having a functional group capable of reacting with isocyanate can be copolymerized as necessary. The functional group capable of reacting with isocyanate is preferably a hydroxyl group or an amino group, and may have either one or both. Specific examples thereof include dimethylolbutanoic acid, dimethylolpropionic acid, 1,2-propylene glycol, 1,2-butylene glycol, 1,3-butylene glycol, 2,3-butylene glycol, 2,2- Dimethyl-1,3-propanediol, 3-methyl-1,5-pentanediol, 2,2,4-trimethyl-1,3-pentanediol, 2-ethyl-1,3-hexanediol, 2,2- Dimethyl-3-hydroxypropyl-2 ′, 2′-dimethyl-3′-hydroxypropanoate, 2-normalbutyl-2-ethyl-1,3-propanediol, 3-ethyl-1,5-pentanediol, 3 -Propyl-1,5-pentanediol, 2,2-diethyl-1,3-propanediol, 3-octyl-1,5-pentanediol , 3-phenyl-1,5-pentanediol, 2,5-dimethyl-3-sodiumsulfo-2,5-hexanediol, dimer diol (for example, PRIIPOL-2033 manufactured by Unikema International) Compounds having two hydroxyl groups, trimethylol ethane, trimethylol propane, glycerin, pentaerythritol, polyglycerin and other alcohols having three or more hydroxyl groups in one molecule, monoethanolamine, diethanolamine, triethanolamine 1 Amino alcohol having at least one hydroxyl group and amino group in its molecule, ethylenediamine, 1,6-hexanediamine, 1,8-octanediamine, 1,9-nonanediamine, 1,10-decanediamine, 1,11-undecanediamine 1,12-dodecandi Two amino groups in one molecule such as aliphatic diamines such as min, aromatic diamines such as metaxylene diamine, 4,4′-diaminodiphenylmethane, 3,4′-diaminodiphenyl ether, and 4,4′-diaminodiphenyl ether The compound which has is mentioned. The above-mentioned compound having a functional group capable of reacting with two or more isocyanates per molecule having a number average molecular weight of less than 1,000 may be used alone or in combination with a plurality of compounds without any problem.
本発明におけるバインダ樹脂(A)の数平均分子量は特に限定はされないが、数平均分子量が5,000〜60,000であることが好ましい。数平均分子量が低すぎると、形成された導電性薄膜の耐久性、耐湿熱性の面で好ましくない。一方、数平均分子量が高すぎると、樹脂の凝集力が増し、導電性薄膜としての耐久性等は向上するものの、レーザーエッチング加工適性が顕著に悪化する。 The number average molecular weight of the binder resin (A) in the present invention is not particularly limited, but the number average molecular weight is preferably 5,000 to 60,000. If the number average molecular weight is too low, it is not preferable in terms of durability and heat and humidity resistance of the formed conductive thin film. On the other hand, if the number average molecular weight is too high, the cohesive strength of the resin increases and the durability as a conductive thin film is improved, but the suitability for laser etching is significantly deteriorated.
本発明におけるバインダ樹脂(A)のガラス転移温度は60℃以上であることが好ましく、65℃以上であることがより好ましい。ガラス転移温度が低いと、レーザーエッチング加工適性が向上する場合があるが、導電性薄膜としての湿熱環境信頼性が低下するおそれがあり、また、表面硬度の低下を誘発しタック性により製造工程及び/又は使用の際に接触相手側へのペースト含有成分の移行が生じて導電性薄膜信頼性が低下するおそれがある。一方、本発明に用いるバインダ樹脂(A)のガラス転移温度は、印刷性、密着性、溶解性、ペースト粘度、及びレーザーエッチング加工適性等を考慮すると、150℃以下が好ましく、120℃以下がより好ましく、100℃以下が更に好ましい。 The glass transition temperature of the binder resin (A) in the present invention is preferably 60 ° C. or higher, and more preferably 65 ° C. or higher. If the glass transition temperature is low, the suitability for laser etching may be improved, but there is a risk that the reliability of wet heat environment as a conductive thin film may be reduced, and the manufacturing process and There is a risk that the reliability of the conductive thin film is lowered due to the migration of the paste-containing component to the contact partner side during use. On the other hand, the glass transition temperature of the binder resin (A) used in the present invention is preferably 150 ° C. or less, more preferably 120 ° C. or less in consideration of printability, adhesion, solubility, paste viscosity, laser etching processing suitability, and the like. Preferably, 100 degrees C or less is still more preferable.
本発明におけるバインダ樹脂(A)の酸価は特に限定されないが、特定の範囲の酸価を有していることで、基材に対する密着性を著しく向上させることができる場合がある。導電性薄膜のレーザーエッチング加工時において、レーザー照射部位周辺の温度が上昇し導電性薄膜と基材との密着性が低下する場合があるが、バインダ樹脂(A)として、特定範囲の酸価を有するバインダ樹脂を用いることにより、密着性の低下を抑制することができる場合がある。バインダ樹脂(A)の酸価は、50〜350eq/tonであることが好ましく、100〜250eq/tonであることがより好ましい。酸価が低すぎると、形成される導電性薄膜と基材との密着性が低くなる傾向がある。一方、酸価が高すぎると、形成される導電性薄膜の吸水性が高くなる上、カルボキシル基による触媒作用によりバインダ樹脂の加水分解が促進される可能性があり、導電性薄膜の信頼性の低下につながる傾向がある。 Although the acid value of binder resin (A) in this invention is not specifically limited, Adhesion with respect to a base material may be remarkably improved by having an acid value of a specific range. At the time of laser etching processing of the conductive thin film, the temperature around the laser irradiation site may increase and the adhesion between the conductive thin film and the substrate may decrease, but the binder resin (A) has an acid value in a specific range. By using the binder resin that has, it may be possible to suppress a decrease in adhesion. The acid value of the binder resin (A) is preferably 50 to 350 eq / ton, and more preferably 100 to 250 eq / ton. If the acid value is too low, the adhesion between the conductive thin film to be formed and the substrate tends to be low. On the other hand, if the acid value is too high, the water-absorbing property of the formed conductive thin film increases, and the hydrolysis of the binder resin may be promoted by the catalytic action of the carboxyl group. It tends to lead to a decline.
<金属粉(B)>
本発明に用いられる金属粉(B)としては、銀粉、金粉、白金粉、パラジウム粉等の貴金属粉、銅粉、ニッケル粉、アルミ粉、真鍮粉等の卑金属粉、銀等の貴金属でめっき又は合金化した卑金属粉等を挙げることができる。これらの金属粉は、単独で用いてもよく、また、併用してもよい。これらの中でも導電性、安定性、コスト等を考慮すると銀粉単独又は銀粉を主体とするものが好ましい。
<Metal powder (B)>
The metal powder (B) used in the present invention is plated with noble metal powder such as silver powder, gold powder, platinum powder and palladium powder, base metal powder such as copper powder, nickel powder, aluminum powder and brass powder, or noble metal such as silver. Examples include alloyed base metal powders. These metal powders may be used alone or in combination. Among these, considering the conductivity, stability, cost, etc., the silver powder alone or the one mainly composed of silver powder is preferable.
本発明に用いられる金属粉(B)の形状は特に限定されない。従来から知られている金属粉の形状の例としては、フレーク状(リン片状)、球状、樹枝状(デンドライト状)、特開平9−306240号公報に記載されている球状の1次粒子が3次元状に凝集した形状(凝集状)等があり、これらの中で、球状、凝集状およびフレーク状の金属粉を用いることが好ましい。 The shape of the metal powder (B) used in the present invention is not particularly limited. Examples of conventionally known metal powder shapes include flakes (flakes), spheres, dendrites (dendrites), and spherical primary particles described in JP-A-9-306240. There are three-dimensionally aggregated shapes (aggregate) and the like, and among these, it is preferable to use spherical, aggregated and flaky metal powders.
本発明に用いられる金属粉(B)の中心径(D50)は4μm以下であることが好ましい。中心径が4μm以下の金属粉(B)を用いることで、レーザーエッチング加工部位の細線形状が良好となる傾向にある。中心径が4μmより大きい金属粉を用いた場合には、レーザーエッチング加工後の細線形状が悪くなり、結果として細線同士が接触を起こし、短絡を招く可能性がある。さらには、レーザーエッチング加工で、一旦剥離・除去した導電性薄膜が再度加工部位に付着する可能性がある。金属粉(B)の中心径の下限は特に限定されないが、コスト的観点ならびに、粒径が細かくなると凝集し易く、結果として分散が困難となるため中心径は80nm以上であることが好ましい。中心径が80nmより小さくなると、金属粉の凝集力が増し、レーザーエッチング加工適正が悪化する他、コスト的観点からも好ましくない。 The center diameter (D50) of the metal powder (B) used in the present invention is preferably 4 μm or less. By using the metal powder (B) having a center diameter of 4 μm or less, the thin line shape of the laser etching processed portion tends to be good. When a metal powder having a center diameter larger than 4 μm is used, the shape of the fine wire after laser etching is deteriorated, and as a result, the fine wires may come into contact with each other, possibly causing a short circuit. Furthermore, there is a possibility that the conductive thin film once peeled and removed by the laser etching process may adhere to the processing site again. The lower limit of the center diameter of the metal powder (B) is not particularly limited, but it is preferable that the center diameter is 80 nm or more because it tends to agglomerate when the particle diameter becomes fine and dispersion becomes difficult as a result. When the center diameter is smaller than 80 nm, the cohesive force of the metal powder increases, the laser etching processing suitability deteriorates, and it is not preferable from the viewpoint of cost.
なお、中心径(D50)とは、何らかの測定方法によって得られた累積分布曲線(体積)において、その累積値が50%となる粒径(μm)のことである。本発明においては、累積分布曲線をレーザー回折散乱式粒度分布測定装置(日機装(株)製、MICROTRAC HRA)を用い全反射モードで測定することとする。 The central diameter (D50) is a particle diameter (μm) at which the cumulative value becomes 50% in the cumulative distribution curve (volume) obtained by some measurement method. In the present invention, the cumulative distribution curve is measured in the total reflection mode using a laser diffraction / scattering particle size distribution measuring apparatus (manufactured by Nikkiso Co., Ltd., MICROTRAC HRA).
金属粉(B)の含有量は、形成された導電性薄膜の導電性が良好であるという観点から、熱可塑性樹脂(A)100質量部に対して、400質量部以上が好ましく、560質量部以上がより好ましい。また、(B)成分の含有量は、基材とのとの密着性において良好であるという観点から、熱可塑性樹脂(A)100質量部に対して、1,900質量部以下が好ましく、1,230質量部以下がより好ましい。 The content of the metal powder (B) is preferably 400 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin (A) from the viewpoint that the conductivity of the formed conductive thin film is good. The above is more preferable. Further, the content of the component (B) is preferably 1,900 parts by mass or less with respect to 100 parts by mass of the thermoplastic resin (A), from the viewpoint of good adhesion to the substrate. 230 parts by mass or less is more preferable.
<有機溶剤(C)>
本発明に用いることのできる有機溶剤(C)は、とくに限定されないが、有機溶剤の揮発速度を適切な範囲に保つ観点から、沸点が100℃以上、300℃未満であることが好ましく、より好ましくは沸点が150℃以上、280℃未満である。本発明の導電性ペーストは、典型的には熱可塑性樹脂(A)、金属粉(B)、有機溶剤(C)および必要に応じてその他の成分を三本ロールミル等で分散して作製するが、その際に有機溶剤の沸点が低すぎると、分散中に溶剤が揮発し、導電性ペーストを構成する成分比が変化する懸念がある。一方で、有機溶剤の沸点が高すぎると、乾燥条件によっては溶剤が塗膜中に多量に残存する可能性があり、塗膜の信頼性低下を引き起こす懸念がある。
<Organic solvent (C)>
The organic solvent (C) that can be used in the present invention is not particularly limited, but from the viewpoint of keeping the volatilization rate of the organic solvent within an appropriate range, the boiling point is preferably 100 ° C. or more and less than 300 ° C., more preferably. Has a boiling point of 150 ° C. or higher and lower than 280 ° C. The conductive paste of the present invention is typically prepared by dispersing a thermoplastic resin (A), a metal powder (B), an organic solvent (C) and other components as necessary with a three-roll mill or the like. In this case, if the boiling point of the organic solvent is too low, the solvent volatilizes during dispersion, and there is a concern that the ratio of components constituting the conductive paste changes. On the other hand, if the boiling point of the organic solvent is too high, a large amount of the solvent may remain in the coating film depending on the drying conditions, which may cause a decrease in the reliability of the coating film.
また、本発明に用いることのできる有機溶剤(C)としては、熱可塑性樹脂(A)が可溶であり、かつ、金属粉(B)を良好に分散させることができるものが好ましい。具体例としては、エチルジグリコールアセテート(EDGAC)、ブチルグリコールアセテート(BMGAC)、ブチルジグリコールアセテート(BDGAC)、シクロヘキサノン、トルエン、イソホロン、γ-ブチロラクトン、ベンジルアルコール、エクソン化学製のソル
ベッソ100,150,200、プロピレングリコールモノメチルエーテルアセテート、アジピン酸、こはく酸およびグルタル酸のジメチルエステルの混合物(例えば、デュポン(株)社製DBE)、ターピオネール等が挙げられるが、これらの中で、熱可塑性樹脂(A)の配合成分の溶解性に優れ、連続印刷時の溶剤揮発性が適度でありスクリーン印刷法等による印刷に対する適性が良好であるという観点から、EDGAC、BMGAC、BDGACおよびそれらの混合溶剤が好ましい。
Moreover, as an organic solvent (C) which can be used for this invention, the thing in which a thermoplastic resin (A) is soluble and a metal powder (B) can be disperse | distributed favorably is preferable. Specific examples include ethyl diglycol acetate (EDGAC), butyl glycol acetate (BMGAC), butyl diglycol acetate (BDGAC), cyclohexanone, toluene, isophorone, γ-butyrolactone, benzyl alcohol, Exson Chemical's Solvesso 100, 150, 200, a mixture of dimethyl ester of propylene glycol monomethyl ether acetate, adipic acid, succinic acid and glutaric acid (for example, DBE manufactured by DuPont Co., Ltd.), terpionol, and the like. Among these, thermoplastic resins ( From the viewpoints of excellent solubility of the compounding component A), moderate solvent volatility during continuous printing, and good suitability for printing by a screen printing method, etc., EDGAC, BMGAC, BDGAC, and mixtures thereof Solvents are preferred.
有機溶剤(C)の含有量としては、ペースト全重量100重量部に対して5重量部以上、40重量部以下であることが好ましく、10重量部以上、35重量部以下であることがさらに好ましい。有機溶剤(C)の含有量が高すぎるとペースト粘度が低くなりすぎ、細線印刷の際にダレを生じやすくなる傾向にある。一方で有機溶剤(C)の含有量が低すぎると、ペーストとしての粘度が極めて高くなり、導電性薄膜を形成させる際の例えばスクリーン印刷性が顕著に低下する他、形成された導電性薄膜の膜厚が厚くなり、レーザーエッチング加工性が低下する場合がある。 The content of the organic solvent (C) is preferably 5 parts by weight or more and 40 parts by weight or less, more preferably 10 parts by weight or more and 35 parts by weight or less with respect to 100 parts by weight of the total paste. . When the content of the organic solvent (C) is too high, the paste viscosity becomes too low, and the sagging tends to occur during fine line printing. On the other hand, if the content of the organic solvent (C) is too low, the viscosity as a paste becomes extremely high, and, for example, the screen printability when forming the conductive thin film is significantly reduced. The film thickness becomes thick and the laser etching processability may be reduced.
<レーザー光吸収剤(D)>
本発明の導電ペーストには、レーザー光吸収剤(D)を配合しても良い。ここでレーザー光吸収剤(D)とは、レーザー光の波長に強い吸収を有する添加剤のことであり、レーザー光吸収剤(D)自身は導電性であっても非導電性であってもよい。例えば、基本波の波長が1064nmであるYAGレーザーを光源として用いる場合には、波長1064nmに強い吸収を有する染料および/又は顔料を、レーザー光吸収剤(D)として用いることができる。レーザー光吸収剤(D)を配合するとにより、本発明の導電性薄膜はレーザー光を高効率に吸収し、発熱によるバインダ樹脂(A)の揮散や熱分解が促進され、その結果レーザーエッチング加工適性が向上する。
<Laser light absorber (D)>
You may mix | blend a laser beam absorber (D) with the electrically conductive paste of this invention. Here, the laser light absorber (D) is an additive having strong absorption at the wavelength of the laser light, and the laser light absorber (D) itself may be conductive or non-conductive. Good. For example, when a YAG laser having a fundamental wave wavelength of 1064 nm is used as a light source, a dye and / or pigment having strong absorption at a wavelength of 1064 nm can be used as the laser light absorber (D). By blending the laser light absorber (D), the conductive thin film of the present invention absorbs the laser light with high efficiency, and the volatilization and thermal decomposition of the binder resin (A) due to heat generation is promoted, and as a result, suitability for laser etching processing. Will improve.
本発明に用いることのできるレーザー光吸収剤(D)のうち、導電性を有するものの例としては、カーボンブラック、グラファイト粉などの炭素系のフィラーを挙げることができる。炭素系のフィラーの配合は、本発明の導電性薄膜導電性を高める効果もあるが、例えばカーボンブラックは1060nm近傍に吸収波長を有しているので、YAGレーザー、ファイバーレーザーなどの1064nmの波長のレーザー光を照射すれば導電性薄膜がレーザー光を高効率で吸収するのでレーザー光照射に対する感度が高まり、レーザー照射の走査速度を上げた場合および/またはレーザー光源が低出力な場合においても良好なレーザーエッチング加工適性が得られる、との効果が期待できる。前記炭素系フィラーの含有量としては金属粉(B)100重量部に対し、0.1〜5重量部であることが好ましく、0.3〜2重量部であることがより好ましい。炭素系フィラーの配合比率が低すぎる場合は、導電性を高める効果およびレーザー光照射に対する感度を上げる効果が小さい。一方で炭素系フィラーの配合比率が高すぎる場合は、導電性薄膜の導電性が低下する傾向にあり、更に、カーボンの空隙部位へ樹脂が吸着し、基材との密着性が低下するという問題点が生じる場合もある。 Among the laser light absorbers (D) that can be used in the present invention, examples of those having conductivity include carbon-based fillers such as carbon black and graphite powder. The compounding of the carbon-based filler has the effect of increasing the conductivity of the conductive thin film of the present invention. For example, since carbon black has an absorption wavelength in the vicinity of 1060 nm, it has a wavelength of 1064 nm such as YAG laser and fiber laser. When irradiated with laser light, the conductive thin film absorbs laser light with high efficiency, so the sensitivity to laser light irradiation increases, and it is good even when the scanning speed of laser irradiation is increased and / or when the laser light source is low power The effect that laser etching processing suitability can be obtained can be expected. As content of the said carbon type filler, it is preferable that it is 0.1-5 weight part with respect to 100 weight part of metal powder (B), and it is more preferable that it is 0.3-2 weight part. When the blending ratio of the carbon filler is too low, the effect of increasing the conductivity and the effect of increasing the sensitivity to laser light irradiation are small. On the other hand, when the blending ratio of the carbon-based filler is too high, the conductivity of the conductive thin film tends to be lowered, and further, the resin is adsorbed to the void portion of the carbon and the adhesion with the substrate is lowered. Dots may occur.
本発明に用いることのできるレーザー光吸収剤(D)のうち、非導電性のものの例としては、従来公知の染料、顔料および赤外線吸収剤を挙げることができる。より具体的には、アゾ染料、金属錯塩アゾ染料、ピラゾロンアゾ染料、ナフトキノン染料、アントラキノン染料、フタロシアニン染料、カルボニウム染料、キノンイミン染料、メチン染料、シアニン染料、スクワリリウム色素、ピリリウム塩、金属チオレート錯体等の染料、顔料としては、黒色顔料、黄色顔料、オレンジ色顔料、褐色顔料、赤色顔料、紫色顔料、青色顔料、緑色顔料、蛍光顔料、金属粉顔料、その他、ポリマー結合色素が挙げられる。具体的には、不溶性アゾ顔料、アゾレーキ顔料、縮合アゾ顔料、キレートアゾ顔料、フタロシアニン系顔料、アントラキノン系顔料、ペリレンおよびペリノン系顔料、チオインジゴ系顔料、キナクリドン系顔料、ジオキサジン系顔料、イソインドリノン系顔料、キノフタロン系顔料、染付けレーキ顔料、アジン顔料、ニトロソ顔料、ニトロ顔料、天然顔料、蛍光顔料、無機顔料、が使用できる。赤外線吸収剤の例としてはジイモニウム塩タイプの赤外線吸収剤であるNIR−IM1、アミニウム塩タイプのNIR−AM1(ともにナガセケムテックス社製)を挙げることができる。これらの非導電性のレーザー光吸収剤(D)は0.01〜5重量部、好ましくは0.1〜2重量部含むことが好ましい。非導電性のレーザー光吸収剤(D)の配合比率が低すぎる場合は、レーザー光照射に対する感度を上げる効果が小さい。非導電性のレーザー光吸収剤(D)の配合比率が高すぎる場合は、導電性薄膜の導電性が低下するおそれがあり、またレーザー光吸収剤の色目が顕著となり、用途によっては好ましくない場合がある。 Among the laser light absorbers (D) that can be used in the present invention, examples of non-conductive ones include conventionally known dyes, pigments, and infrared absorbers. More specifically, azo dyes, metal complex azo dyes, pyrazolone azo dyes, naphthoquinone dyes, anthraquinone dyes, phthalocyanine dyes, carbonium dyes, quinoneimine dyes, methine dyes, cyanine dyes, squarylium dyes, pyrylium salts, metal thiolate complexes, etc. Examples of the dyes and pigments include black pigments, yellow pigments, orange pigments, brown pigments, red pigments, purple pigments, blue pigments, green pigments, fluorescent pigments, metal powder pigments, and polymer-bonded pigments. Specifically, insoluble azo pigments, azo lake pigments, condensed azo pigments, chelate azo pigments, phthalocyanine pigments, anthraquinone pigments, perylene and perinone pigments, thioindigo pigments, quinacridone pigments, dioxazine pigments, isoindolinone pigments , Quinophthalone pigments, dyed lake pigments, azine pigments, nitroso pigments, nitro pigments, natural pigments, fluorescent pigments, and inorganic pigments. Examples of infrared absorbers include NIR-IM1, which is a diimonium salt type infrared absorber, and NIR-AM1, an aminium salt type (both manufactured by Nagase ChemteX Corporation). These non-conductive laser light absorbers (D) are contained in an amount of 0.01 to 5 parts by weight, preferably 0.1 to 2 parts by weight. When the blending ratio of the non-conductive laser light absorber (D) is too low, the effect of increasing the sensitivity to laser light irradiation is small. When the blending ratio of the non-conductive laser light absorber (D) is too high, the conductivity of the conductive thin film may be lowered, and the color of the laser light absorber becomes remarkable, which is not preferable depending on the application. There is.
本発明の導電性ペーストには、下記の無機物を添加することができる。無機物としては、炭化ケイ素、炭化ホウ素、炭化チタン、炭化ジルコニウム、炭化ハフニウム、炭化バナジウム、炭化タンタル、炭化ニオブ、炭化タングステン、炭化クロム、炭化モリブテン、炭化カルシウム、ダイヤモンドカーボンラクタム等の各種炭化物;窒化ホウ素、窒化チタン、窒化ジルコニウム等の各種窒化物、ホウ化ジルコニウム等の各種ホウ化物;酸化チタン(チタニア)、酸化カルシウム、酸化マグネシウム、酸化亜鉛、酸化銅、酸化アルミニウム、シリカ、コロイダルシリカ等の各種酸化物;チタン酸カルシウム、チタン酸マグネシウム、チタン酸ストロンチウム等の各種チタン酸化合物;二硫化モリブデン等の硫化物;フッ化マグネシウム、フッ化炭素等の各種フッ化物;ステアリン酸アルミニウム、ステアリン酸カルシウム、ステアリン酸亜鉛、ステアリン酸マグネシウム等の各種金属石鹸;その他、滑石、ベントナイト、タルク、炭酸カルシウム、ベントナイト、カオリン、ガラス繊維、雲母等を用いることができる。これらの無機物を添加することによって、印刷性や耐熱性、さらには機械的特性や長期耐久性を向上させることが可能となる場合がある。中でも、本発明の導電性ペーストにおいては、耐久性、印刷適性、特にスクリーン印刷適性を付与するという観点でシリカが好ましい。 The following inorganic substances can be added to the conductive paste of the present invention. Examples of inorganic substances include silicon carbide, boron carbide, titanium carbide, zirconium carbide, hafnium carbide, vanadium carbide, tantalum carbide, niobium carbide, tungsten carbide, chromium carbide, molybdenum carbide, calcium carbide, diamond carbon lactam, and other carbides; boron nitride Various nitrides such as titanium nitride and zirconium nitride, various borides such as zirconium boride; various oxidations such as titanium oxide (titania), calcium oxide, magnesium oxide, zinc oxide, copper oxide, aluminum oxide, silica and colloidal silica Products: various titanate compounds such as calcium titanate, magnesium titanate, strontium titanate; sulfides such as molybdenum disulfide; various fluorides such as magnesium fluoride and carbon fluoride; aluminum stearate, calcium stearate Um, zinc stearate, various metal soaps such as magnesium stearate and the like; may be used talc, bentonite, talc, calcium carbonate, bentonite, kaolin, glass fiber, mica, and the like. By adding these inorganic substances, it may be possible to improve printability and heat resistance, as well as mechanical properties and long-term durability. Among these, in the conductive paste of the present invention, silica is preferable from the viewpoint of imparting durability, printability, particularly screen printability.
また、本発明の導電性ペーストには、チキソ性付与剤、消泡剤、難燃剤、粘着付与剤、加水分解防止剤、レベリング剤、可塑剤、酸化防止剤、紫外線吸収剤、難燃剤、顔料、染料を配合することができる。さらには樹脂分解抑制剤としてカルボジイミド、エポキシ等を適宜配合することもできる。これらは単独でもしくは併用して用いることができる。 The conductive paste of the present invention includes a thixotropic agent, an antifoaming agent, a flame retardant, a tackifier, a hydrolysis inhibitor, a leveling agent, a plasticizer, an antioxidant, an ultraviolet absorber, a flame retardant, and a pigment. , Dyes can be blended. Furthermore, a carbodiimide, an epoxy, etc. can also be mix | blended suitably as a resin degradation inhibitor. These can be used alone or in combination.
<硬化剤(E)>
本発明の導電性ペーストには、バインダ樹脂(A)と反応し得る硬化剤を、本発明の効果を損なわない程度に配合してもよい。硬化剤を配合することにより、硬化温度が高くなり、生産工程の負荷が増す可能性はあるが、塗膜乾燥時あるいはレーザーエッチング時に発生する熱による架橋で塗膜の耐湿熱性の向上が期待できる。
<Curing agent (E)>
You may mix | blend the hardening | curing agent which can react with binder resin (A) in the electrically conductive paste of this invention to such an extent that the effect of this invention is not impaired. By adding a curing agent, there is a possibility that the curing temperature becomes high and the load of the production process may increase. However, it is expected that the heat and humidity resistance of the coating film can be improved by crosslinking caused by heat generated during coating film drying or laser etching. .
本発明のバインダ樹脂(A)に反応し得る硬化剤は、種類は限定しないが密着性、耐屈曲性、硬化性等からイソシアネート化合物が特に好ましい。さらに、これらのイソシアネート化合物として、イソシアネート基をブロック化したものを使用すると、貯蔵安定性が向上し、好ましい。イソシアネート化合物以外の硬化剤としては、メチル化メラミン、ブチル化メラミン、ベンゾグアナミン、尿素樹脂等のアミノ樹脂、酸無水物、イミダゾール類、エポキシ樹脂、フェノール樹脂等の公知の化合物が挙げられる。これらの硬化剤には、その種類に応じて選択された公知の触媒あるいは促進剤を併用することもできる。硬化剤の配合量としては、本発明の効果を損なわない程度に配合されるものであり、特に制限されるものではないが、バインダ樹脂(A)100質量部に対して、0.5〜50質量部が好ましく、1〜30質量部がより好ましく、2〜20質量部がさらに好ましい。 The type of the curing agent capable of reacting with the binder resin (A) of the present invention is not limited, but an isocyanate compound is particularly preferable from the viewpoint of adhesion, flex resistance, curability, and the like. Furthermore, it is preferable to use those having an isocyanate group blocked as these isocyanate compounds because the storage stability is improved. Examples of curing agents other than isocyanate compounds include known compounds such as amino resins such as methylated melamine, butylated melamine, benzoguanamine, and urea resin, acid anhydrides, imidazoles, epoxy resins, and phenol resins. These curing agents can be used in combination with a known catalyst or accelerator selected according to the type. As a compounding quantity of a hardening | curing agent, it mix | blends to the grade which does not impair the effect of this invention, Although it does not restrict | limit in particular, It is 0.5-50 with respect to 100 mass parts of binder resin (A). A mass part is preferable, 1-30 mass parts is more preferable, and 2-20 mass parts is further more preferable.
本発明の導電性ペーストに配合することができるイソシアネート化合物の例としては、芳香族又は脂肪族のジイソシアネート、3価以上のポリイソシアネート等があり、低分子化合物、高分子化合物のいずれでもよい。例えば、テトラメチレンジイソシアネート、ヘキサメチレンジイソシアネート等の脂肪族ジイソシアネート、トルエンジイソシアネート、ジフェニルメタンジイソシアネート、キシリレンジイソシアネート、等の芳香族ジイソシアネート、水素化ジフェニルメタンジイソシアネート、水素化キシリレンジイソシアネート、ダイマー酸ジイソシアネート、イソホロンジイソシアネート等の脂環族ジイソシアネート、あるいはこれらのイソシアネート化合物の3量体、及びこれらのイソシアネート化合物の過剰量と例えばエチレングリコール、プロピレングリコール、トリメチロールプロパン、グリセリン、ソルビトール、エチレンジアミン、モノエタノールアミン、ジエタノールアミン、トリエタノールアミン等の低分子活性水素化合物又は各種ポリエステルポリオール類、ポリエーテルポリオール類、ポリアミド類の高分子活性水素化合物等と反応させて得られる末端イソシアネート基含有化合物が挙げられる。また、イソシアネート基のブロック化剤としては、例えばフェノール、チオフェノール、メチルチオフェノール、エチルチオフェノール、クレゾール、キシレノール、レゾルシノール、ニトロフェノール、クロロフェノール等のフェノール類;アセトキシム、メチルエチルケトオキシム、シクロヘキサノンオキシム等のオキシム類;メタノール、エタノール、プロパノール、ブタノール等のアルコール類;エチレンクロルヒドリン、1,3−ジクロロ−2−プロパノール等のハロゲン置換アルコール類;t−ブタノール、t−ペンタノール等の第三級アルコール類;ε−カプロラクタム、δ−バレロラクタム、γ−ブチロラクタム、β−プロピロラクタム等のラクタム類が挙げられ、その他にも芳香族アミン類、イミド類、アセチルアセトン、アセト酢酸エステル、マロン酸エチルエステル等の活性メチレン化合物、メルカプタン類、イミン類、イミダゾール類、尿素類、ジアリール化合物類、重亜硫酸ソーダ等も挙げられる。このうち、硬化性よりオキシム類、イミダゾール類、アミン類が特に好ましい。 Examples of isocyanate compounds that can be blended in the conductive paste of the present invention include aromatic or aliphatic diisocyanates, trivalent or higher polyisocyanates, and any of low molecular compounds and polymer compounds may be used. For example, aliphatic diisocyanates such as tetramethylene diisocyanate and hexamethylene diisocyanate, aromatic diisocyanates such as toluene diisocyanate, diphenylmethane diisocyanate, xylylene diisocyanate, hydrogenated diphenylmethane diisocyanate, hydrogenated xylylene diisocyanate, dimer acid diisocyanate, isophorone diisocyanate, etc. Alicyclic diisocyanates, or trimers of these isocyanate compounds, and excess amounts of these isocyanate compounds such as ethylene glycol, propylene glycol, trimethylolpropane, glycerin, sorbitol, ethylenediamine, monoethanolamine, diethanolamine, triethanolamine Low molecular active hydrogen compounds such as Polyester polyols, polyether polyols, terminal isocyanate group-containing compounds obtained by reacting a polymeric active hydrogen compound such as polyamides and the like. Examples of the isocyanate group blocking agent include phenols such as phenol, thiophenol, methylthiophenol, ethylthiophenol, cresol, xylenol, resorcinol, nitrophenol, and chlorophenol; oximes such as acetoxime, methyl ethyl ketoxime, and cyclohexanone oxime. Alcohols such as methanol, ethanol, propanol and butanol; halogen-substituted alcohols such as ethylene chlorohydrin and 1,3-dichloro-2-propanol; tertiary alcohols such as t-butanol and t-pentanol ; Lactams such as ε-caprolactam, δ-valerolactam, γ-butyrolactam, β-propylolactam, and other aromatic amines, imides, acetylacetone, Seto acetate, active methylene compounds such as malonic acid ethyl ester, mercaptans, imines, imidazoles, ureas, diaryl compounds, sodium bisulfite, etc. can be mentioned. Of these, oximes, imidazoles, and amines are particularly preferable from the viewpoint of curability.
<<本発明の導電性ペーストに求められる物性>> << Physical Properties Required for the Conductive Paste of the Present Invention >>
本発明の導電性ペーストは、F値が60〜95%であることが好ましく、より好ましくは75〜95%である。F値とはペースト中に含まれる全固形分100質量部に対するフィラー質量部を示す数値であり、F値=(フィラー質量部/固形分質量部)×100で表される。ここで言うフィラー質量部とは導電性粉末の質量部、固形分質量部とは溶剤以外の成分の質量部であり、導電性粉末、バインダ樹脂、その他の硬化剤や添加剤を全て含む。F値が低すぎると良好な導電性を示す導電性薄膜が得られず、F値が高すぎると導電性薄膜と基材との密着性及び/又は導電性薄膜の表面硬度が低下する傾向にあり、印刷性の低下も避けられない。尚、ここで導電性粉末とは、金属粉(B)および非金属からなる導電性粉末の双方を指す。 The conductive paste of the present invention preferably has an F value of 60 to 95%, more preferably 75 to 95%. The F value is a numerical value indicating the filler mass part with respect to 100 mass parts of the total solid content contained in the paste, and is represented by F value = (filler mass part / solid mass part) × 100. The filler mass part referred to here is the mass part of the conductive powder, and the solid mass part is a mass part of components other than the solvent, and includes all of the conductive powder, the binder resin, and other curing agents and additives. If the F value is too low, a conductive thin film showing good conductivity cannot be obtained. If the F value is too high, the adhesion between the conductive thin film and the substrate and / or the surface hardness of the conductive thin film tends to decrease. Yes, printability is inevitable. Here, the conductive powder refers to both the metal powder (B) and the conductive powder made of a nonmetal.
<<本発明の導電性ペーストの製造方法>>
本発明の導電性ペーストは前述したように熱可塑性樹脂(A)、金属粉(B)、有機溶剤(C)および必要に応じてその他の成分を三本ロール等で分散して作製することができる。ここで、より具合的な作製手順の例を示す。熱可塑性樹脂(A)をまずは有機溶剤(C)に溶解する。その後、金属粉(B)ならびに、必要に応じて添加剤を添加し、ダブルプラネタリーやディゾルバー、遊星式の攪拌機等で予備分散を実施する。その後、三本ロールミルで分散して、導電性ペーストを得る。このようにして得られた導電性ペーストは必要に応じて濾過することができる。その他の分散機、例えばビーズミル、ニーダー、エクストルーダーなどを用いて分散しても何ら問題はない。
<< Method for Producing Conductive Paste of the Present Invention >>
As described above, the conductive paste of the present invention can be prepared by dispersing the thermoplastic resin (A), the metal powder (B), the organic solvent (C), and other components as necessary with a three roll or the like. it can. Here, an example of a more specific production procedure is shown. The thermoplastic resin (A) is first dissolved in the organic solvent (C). Thereafter, the metal powder (B) and additives as necessary are added, and preliminary dispersion is carried out with a double planetary, a dissolver, a planetary stirrer or the like. Then, it disperses | distributes with a 3 roll mill, and obtains an electrically conductive paste. The conductive paste thus obtained can be filtered if necessary. There is no problem even if the dispersion is performed using other dispersers such as a bead mill, a kneader, and an extruder.
<<本発明の導電性薄膜、導電性積層体およびこれらの製造方法>>
本発明の導電性ペーストを基材上に塗布または印刷して塗膜を形成し、次いで塗膜に含まれる有機溶剤(C)を揮散させ塗膜を乾燥させることにより、本発明の導電性薄膜を形成することができる。導電性ペーストを基材上に塗布または印刷する方法はとくに限定されないが、スクリーン印刷法により印刷することが工程の簡便さおよび導電性ペーストを用いて電気回路を形成する業界で普及している技術である点から好ましい。また、導電性ペーストは、最終的に電気回路として必要とされる導電性薄膜部位よりも幾分広い部位に塗布または印刷することが、レーザーエッチング工程の負荷を下げ効率よく本発明の電気回路を形成するとの観点から、好ましい。
<< Conductive Thin Film, Conductive Laminate and Production Method of the Present Invention >>
The conductive paste of the present invention is formed by applying or printing the conductive paste of the present invention on a substrate to form a coating film, and then evaporating the organic solvent (C) contained in the coating film and drying the coating film. Can be formed. The method for applying or printing the conductive paste on the substrate is not particularly limited, but printing by the screen printing method is simple in the process and the technology that is widely used in the industry for forming an electric circuit using the conductive paste It is preferable from the point. In addition, the conductive paste can be applied or printed on a portion slightly wider than the portion of the conductive thin film that is ultimately required as an electric circuit, reducing the load of the laser etching process and improving the efficiency of the electric circuit of the present invention. From the viewpoint of forming, it is preferable.
本発明の導電性ペーストを塗布する基材としては、寸法安定性に優れた材料が好ましく用いられる。例えばポリエチレンテレフタレート、ポリエチレンナフタレート、ポリブチレンテレフタレート或いはポリカーボネート等の可撓性に優れる材料からなるフィルムを挙げることができる。また、ガラス等の無機材料も基材として使用することができる。基材の厚みはとくに限定されないが、50〜350μmであることが好ましくは、100〜250μmがパターン形成材料の機械的特性、形状安定性あるいは取り扱い性等から更に好ましい。 As the base material to which the conductive paste of the present invention is applied, a material excellent in dimensional stability is preferably used. For example, a film made of a material having excellent flexibility such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, or polycarbonate can be used. Moreover, inorganic materials, such as glass, can also be used as a base material. The thickness of the substrate is not particularly limited, but is preferably 50 to 350 μm, and more preferably 100 to 250 μm from the viewpoint of mechanical properties, shape stability, handleability, and the like of the pattern forming material.
また、本発明の導電性ペーストを塗布する基材の表面に物理的処理および/または化学的処理を行うことにより、導電性薄膜と基材との密着性を向上させることができる。物理的処理方法の例としては、サンドブラスト法、微粒子を含有した液体を噴射するウエットブラスト法、コロナ放電処理法、プラズマ処理法、紫外線あるいは真空紫外線照射処理法などを挙げることができる。また、化学的処理方法の例としては、強酸処理法、強アルカリ処理法、酸化剤処理法、カップリング剤処理法などを挙げることができる。 Moreover, the adhesiveness of an electroconductive thin film and a base material can be improved by performing a physical process and / or a chemical process to the surface of the base material which apply | coats the electrically conductive paste of this invention. Examples of the physical treatment method include a sand blast method, a wet blast method in which a liquid containing fine particles is sprayed, a corona discharge treatment method, a plasma treatment method, an ultraviolet ray or vacuum ultraviolet ray irradiation treatment method, and the like. Examples of chemical treatment methods include strong acid treatment methods, strong alkali treatment methods, oxidizing agent treatment methods, and coupling agent treatment methods.
また、前記基材は透明導電性層を有するものであってもよい。本発明の導電性薄膜を透明導電性層上に積層することができる。前記透明導電性層の素材は特に限定されず、例えば、酸化インジウム・スズを主成分としてなるITO膜を挙げることができる。また、透明導電性層は基材全面に形成されたものだけでなく、エッチング等により透明導電性層の一部が除去されたものを使用することもできる。 Moreover, the said base material may have a transparent conductive layer. The conductive thin film of the present invention can be laminated on the transparent conductive layer. The material of the transparent conductive layer is not particularly limited, and examples thereof include an ITO film containing indium tin oxide as a main component. Further, the transparent conductive layer is not limited to the one formed on the entire surface of the base material, but can also be one obtained by removing a part of the transparent conductive layer by etching or the like.
有機溶剤(C)を揮散させる工程は、常温下および/または加熱下で行うことが好ましい。加熱する場合、乾燥後の導電性薄膜の導電性や密着性、表面硬度が良好となることから、加熱温度は80℃以上が好ましく、100℃以上がより好ましく、110℃以上がさらに好ましい。また、下地の透明導電性層の耐熱性、及び生産工程における省エネルギーの観点から、加熱温度は150℃以下が好ましく、135℃以下がより好ましく、130℃以下がさらに好ましい。本発明の導電性ペーストに硬化剤が配合されている場合には、有機溶剤(C)を揮散させる工程を加熱下で行うと、硬化反応が進行する。 The step of evaporating the organic solvent (C) is preferably performed at room temperature and / or under heating. In the case of heating, since the conductivity, adhesion and surface hardness of the conductive thin film after drying are improved, the heating temperature is preferably 80 ° C. or higher, more preferably 100 ° C. or higher, and further preferably 110 ° C. or higher. Further, from the viewpoint of heat resistance of the underlying transparent conductive layer and energy saving in the production process, the heating temperature is preferably 150 ° C. or lower, more preferably 135 ° C. or lower, and further preferably 130 ° C. or lower. When the curing agent is blended in the conductive paste of the present invention, the curing reaction proceeds when the step of evaporating the organic solvent (C) is performed under heating.
本発明の導電性薄膜の厚さは、用いられる用途に従って適切な厚さに設定すればよい。但し、乾燥後の導電性薄膜の導電性が良好であるという観点と、レーザーエッチング加工適性が良好であるという観点から、導電性薄膜の膜厚は3μm以上、30μm以下が好ましく、より好ましくは5μm以上、20μm以下である。導電性薄膜の膜厚が薄すぎると、回路としての所望の導電性が得られない可能性がある。膜厚が厚すぎると、レーザーエッチング加工に要する照射量が過大に必要になり、基材にダメージを与える場合がある。また、膜厚のばらつきが大きいと、導電性薄膜のエッチングされやすさにばらつきが生じ、エッチング不足による線間の短絡やエッチング過剰による断線が生じやすくなる傾向にある。このため、膜厚のばらつきは小さい方がよい。 What is necessary is just to set the thickness of the electroconductive thin film of this invention to an appropriate thickness according to the use used. However, the thickness of the conductive thin film is preferably 3 μm or more and 30 μm or less, more preferably 5 μm from the viewpoint that the conductivity of the conductive thin film after drying is good and the suitability for laser etching processing is good. As mentioned above, it is 20 micrometers or less. If the conductive thin film is too thin, there is a possibility that desired conductivity as a circuit cannot be obtained. If the film thickness is too thick, an excessive amount of irradiation is required for laser etching, which may damage the substrate. In addition, when the film thickness varies greatly, the conductive thin film tends to be etched easily, and a short circuit between lines due to insufficient etching or disconnection due to excessive etching tends to occur. For this reason, it is better that the variation in film thickness is small.
<<本発明の電気回路およびその製造方法>> << Electric Circuit and Manufacturing Method of the Present Invention >>
レーザー光が照射され吸収された部位においては、レーザー光のエネルギーが熱へと変換され、温度上昇により熱分解および/または揮散が生じ、照射部位が剥離・除去される。本発明の導電性薄膜のレーザー光を照射された部位が効率よく基材から除去されるためには、本発明の導電性薄膜が照射レーザー光の波長に強い吸収を有することが好ましい。よって、レーザー種としては、本発明の導電性薄膜を構成するいずれかの成分が強い吸収を有する波長領域にエネルギーを有するレーザー種を選択することが好ましい。 In the site where the laser beam is irradiated and absorbed, the energy of the laser beam is converted into heat, and thermal decomposition and / or volatilization occurs due to the temperature rise, and the irradiated site is peeled and removed. In order for the portion of the conductive thin film of the present invention irradiated with the laser light to be efficiently removed from the substrate, the conductive thin film of the present invention preferably has strong absorption at the wavelength of the irradiated laser light. Therefore, it is preferable to select a laser species having energy in a wavelength region where any of the components constituting the conductive thin film of the present invention has strong absorption.
一般的なレーザー種としては、エキシマレーザ(基本波の波長が193〜308nm)、YAGレーザ(基本波の波長が1064nm)、ファイバーレーザー(基本波の波長が1060nm)、CO2レーザー(基本波の波長が10600nm)、半導体レーザーなどが挙げられ、基本的にはどのような方式、どのような波長のレーザー種を用いても何ら問題はない。導電性薄膜のいずれかの構成成分の吸収波長領域と一致し、なおかつ基材が強い吸収を有さない波長を照射することのできるレーザー種を選択することにより、レーザー光照射部位の導電性薄膜の除去を効率的に行い、なおかつ基材のダメージを避けることができる。このような観点から、照射するレーザー種としては、基本波の波長が、532〜10700nmの範囲が好ましい。例えば、ポリエステルフィルム、ポリエステルフィルム上にITO層を形成した透明導電性積層体、または、ポリエステルフィルム上にITO層を形成しその一部をエッチングにより除去された積層体を基材として用いる場合には、YAGレーザーまたはファイバーレーザーを使用することが、基本波の波長に基材が吸収を有さないので基材にダメージを与えにくい点で特に好ましい。 Common laser types include excimer laser (fundamental wavelength 193 to 308 nm), YAG laser (fundamental wave wavelength 1064 nm), fiber laser (fundamental wave wavelength 1060 nm), CO2 laser (fundamental wave wavelength). 10600 nm), semiconductor lasers, and the like. Basically, there is no problem even if any system and laser type of any wavelength are used. By selecting a laser species that matches the absorption wavelength region of any constituent of the conductive thin film and that can be irradiated with a wavelength that the substrate does not have strong absorption, the conductive thin film at the laser light irradiation site is selected. Can be efficiently removed, and damage to the substrate can be avoided. From such a viewpoint, the wavelength of the fundamental wave is preferably in the range of 532 to 10700 nm as the laser type to be irradiated. For example, when using as a base material a polyester film, a transparent conductive laminate in which an ITO layer is formed on a polyester film, or a laminate in which an ITO layer is formed on a polyester film and a part thereof is removed by etching It is particularly preferable to use a YAG laser or a fiber laser because the base material has no absorption at the wavelength of the fundamental wave and is difficult to damage the base material.
レーザー出力、Q変調周波数は特に限定されないが、レーザー光照射部位の導電性薄膜を除去でき、かつ下地の基材が損傷しないように調節する。一般的には、レーザー出力は、0.5〜100W、Q変調周波数10〜400kHzの範囲で適宜調節することが好ましい。レーザー出力が低すぎると、導電性薄膜の除去が不十分となる傾向にあるが、レーザーの走査速度を低くしたり走査回数を増やしたりすることにより園そのような傾向はある程度回避できる。レーザー出力が高すぎると、照射部分からの熱の拡散によって導電性薄膜が剥離される部位がレーザービーム径よりも極端に大きくなり、線幅が細くなりすぎたり断線したりする可能性がある。 The laser output and the Q modulation frequency are not particularly limited, but are adjusted so that the conductive thin film at the laser light irradiation site can be removed and the underlying substrate is not damaged. In general, the laser output is preferably adjusted as appropriate in the range of 0.5 to 100 W and the Q modulation frequency of 10 to 400 kHz. If the laser output is too low, removal of the conductive thin film tends to be insufficient, but such a tendency can be avoided to some extent by reducing the scanning speed of the laser or increasing the number of scans. If the laser output is too high, the portion where the conductive thin film is peeled off due to the diffusion of heat from the irradiated portion becomes extremely larger than the laser beam diameter, and the line width may be too thin or disconnected.
レーザー光の走査速度は、タクトタイムの減少による生産効率向上の観点からは高いほどよく、具体的には、1000mm/s以上が好ましく、1500mm/s以上がより好ましく、さらに好ましくは2000mm/s以上である。走査速度が遅すぎると、生産効率が低下するのみならず、導電性薄膜および基材が熱履歴によりダメージを受けるおそれがある。加工速度の上限は特には定めないが、走査速度が高すぎると、レーザー光照射部位の導電性薄膜の除去が不完全となり回路が短絡する可能性がある。また、走査速度が速すぎると、形成するパターンのコーナー部位において、直線部位と比較して走査速度を減速させることが避けられなくなるため、コーナー部位の熱履歴が直線部位にくらべて高くなり、コーナー部位のレーザーエッチング加工部位周辺の導電性薄膜の物性が顕著に低下するおそれがある。 The scanning speed of the laser beam is preferably as high as possible from the viewpoint of improving the production efficiency by reducing the tact time. Specifically, it is preferably 1000 mm / s or more, more preferably 1500 mm / s or more, and further preferably 2000 mm / s or more. It is. If the scanning speed is too slow, not only the production efficiency is lowered, but the conductive thin film and the substrate may be damaged by the thermal history. Although the upper limit of the processing speed is not particularly defined, if the scanning speed is too high, the removal of the conductive thin film at the laser light irradiation site may be incomplete and the circuit may be short-circuited. In addition, if the scanning speed is too high, it is inevitable that the scanning speed is reduced at the corner portion of the pattern to be formed as compared with the linear portion. There exists a possibility that the physical property of the electroconductive thin film around the site | part of the laser etching process of a site | part may fall notably.
レーザー光の走査は、レーザー光の発射体を動かす、レーザー光を照射される被照射体を動かす、あるいは双方を組み合わせる、のいずれでも良く、例えばXYステージを用いることにより実現できる。また、ガルバノミラー等を用いてレーザー光の照射方向を変更することによりレーザー光を走査することもできる。 Laser beam scanning may be performed by either moving the laser beam projectile, moving the irradiated object irradiated with the laser beam, or combining both, and can be realized by using, for example, an XY stage. Further, the laser beam can be scanned by changing the irradiation direction of the laser beam using a galvanometer mirror or the like.
レーザー光の照射に際して、集光レンズ(アクロマティックレンズ等)を使用することにより、単位面積あたりのエネルギー密度を高めることができる。この方法の利点としては、マスクを使用する場合と比較して、単位面積当たりのエネルギー密度を大きくすることができるため、小さな出力のレーザー発振器であっても高い走査速度でレーザーエッチング加工を行うことが可能になる点が挙げられる。集光したレーザー光を導電性薄膜へ照射する場合、焦点距離を調節する必要がある。焦点距離の調節は、特に基材に塗布されている膜厚によって調節する必要があるが、基材に損傷を与えず、かつ所定の導電性薄膜パターンを剥離・除去できるように調節することが好ましい。 The energy density per unit area can be increased by using a condensing lens (such as an achromatic lens) at the time of laser light irradiation. The advantage of this method is that the energy density per unit area can be increased compared to the case of using a mask, so laser etching can be performed at a high scanning speed even with a low-power laser oscillator. The point that becomes possible. When irradiating the focused laser beam to the conductive thin film, it is necessary to adjust the focal length. The focal length must be adjusted according to the film thickness applied to the substrate, but it can be adjusted so that the substrate is not damaged and the predetermined conductive thin film pattern can be removed and removed. preferable.
レーザー光の走査を複数回同一パターンで繰り返し行うことは、好ましい実施態様のひとつである。1回目の走査において除去不完全な導電性薄膜部位があった場合、もしくは除去した導電性薄膜を構成する成分が再度基材に付着した場合であっても、複数回の走査でレーザー光照射部位の導電性薄膜を完全に除去することが可能となる。走査回数の上限は特には限定されないが、加工部位周辺が熱履歴を複数回受けることで、ダメージを受け、変色したり、塗膜物性が低下する可能性があるため、注意が必要となる。また、生産効率の点からは、走査回数は少ないほど良いのは当然である。 It is one of the preferred embodiments that the scanning of the laser light is repeated a plurality of times in the same pattern. Even if there is an incompletely removed conductive thin film portion in the first scan, or even if the component constituting the removed conductive thin film is attached to the substrate again, the laser light irradiated portion is scanned multiple times. It is possible to completely remove the conductive thin film. The upper limit of the number of scans is not particularly limited. However, care must be taken because the periphery of the processed part may be damaged and discolored or the physical properties of the coating film may be deteriorated by receiving heat history multiple times. Of course, the smaller the number of scans, the better from the viewpoint of production efficiency.
レーザー光の走査を複数回同一パターンで繰り返し行なわないことも、好ましい実施態様のひとつである。得られる導電性薄膜、導電性積層体および電気回路の特性に悪影響を及ぼさない限り、走査回数は少ないほど生産効率的に優れることは当然である。 It is also a preferred embodiment that the laser beam scanning is not repeated a plurality of times in the same pattern. As long as the number of scans is small, the production efficiency is naturally excellent as long as the properties of the obtained conductive thin film, conductive laminate and electric circuit are not adversely affected.
<<本発明のタッチパネル>>
本発明の導電性薄膜、導電性積層体および/または電気回路はタッチパネルの構成部材として用いることができる。前記タッチパネルは、抵抗膜方式であっても静電容量方式であってもよい。いずれのタッチパネルにも適用が可能であるが、本ペーストは、細線形成に好適であるため、静電容量方式のタッチパネルの電極配線用に特に好適に用いることができる。尚、前記タッチパネルを構成する基材としては、ITO膜等の透明導電性層を有している基材、もしくはそれらがエッチングによって一部除去された基材を用いることが好ましい。
<< Touch Panel of the Present Invention >>
The conductive thin film, conductive laminate and / or electric circuit of the present invention can be used as a constituent member of a touch panel. The touch panel may be a resistive film type or a capacitive type. Although it can be applied to any touch panel, the paste is suitable for forming a thin line, and therefore can be particularly suitably used for electrode wiring of a capacitive touch panel. In addition, as a base material which comprises the said touch panel, it is preferable to use the base material which has transparent conductive layers, such as an ITO film | membrane, or the base material from which they were partially removed by the etching.
本発明をさらに詳細に説明するために以下に実施例、比較例を挙げるが、本発明は実施例によってなんら限定されるものではない。尚、実施例、比較例に記載された各測定値は次の方法によって測定したものである。 In order to describe the present invention in more detail, examples and comparative examples are given below, but the present invention is not limited to the examples. In addition, each measured value described in the Example and the comparative example was measured by the following method.
1.数平均分子量
試料樹脂を、樹脂濃度が0.5重量%程度となるようにテトラヒドロフランに溶解し、孔径0.5μmのポリ四フッ化エチレン製メンブランフィルターで濾過し、GPC測定試料とした。テトラヒドロフランを移動相とし、島津製作所社製のゲル浸透クロマトグラフ(GPC)Prominenceを用い、示差屈折計(RI計)を検出器として、カラム温度30℃、流量1ml/分にて樹脂試料のGPC測定を行なった。尚、数平均分子量は標準ポリスチレン換算値とし、分子量1000未満に相当する部分を省いて算出した。GPCカラムは昭和電工(株)製のshodex KF−802、804L、806Lを用いた。
1. Number average molecular weight The sample resin was dissolved in tetrahydrofuran so that the resin concentration was about 0.5% by weight and filtered through a polytetrafluoroethylene membrane filter having a pore size of 0.5 μm to obtain a GPC measurement sample. GPC measurement of a resin sample using tetrahydrofuran as a mobile phase, a gel permeation chromatograph (GPC) Prominence manufactured by Shimadzu Corporation, and a differential refractometer (RI meter) as a detector at a column temperature of 30 ° C. and a flow rate of 1 ml / min. Was done. The number average molecular weight was a standard polystyrene equivalent value, and was calculated by omitting a portion corresponding to a molecular weight of less than 1000. Shodex KF-802, 804L, and 806L manufactured by Showa Denko KK were used as GPC columns.
2.ガラス転移温度(Tg)
試料樹脂5mgをアルミニウム製サンプルパンに入れて密封し、セイコーインスツルメンツ(株)製の示差走査熱量分析計(DSC)DSC−220を用いて、200℃まで、昇温速度20℃/分にて測定し、ガラス転移温度以下のベースラインの延長線と遷移部における最大傾斜を示す接線との交点の温度で求めた。
2. Glass transition temperature (Tg)
5 mg of sample resin is put in an aluminum sample pan, sealed, and measured using a differential scanning calorimeter (DSC) DSC-220 manufactured by Seiko Instruments Inc. up to 200 ° C. at a temperature rising rate of 20 ° C./min. And the temperature at the intersection of the base line extension below the glass transition temperature and the tangent indicating the maximum slope at the transition.
3.酸価
試料樹脂0.2gを精秤し20mlのクロロホルムに溶解した。ついで、指示薬にフェノールフタレイン溶液を用い、0.01Nの水酸化カリウム(エタノール溶液)で滴定を行った。酸価の単位はeq/ton、すなわち試料1トン当たりの当量とした。
3. Acid value 0.2 g of sample resin was precisely weighed and dissolved in 20 ml of chloroform. Subsequently, titration was performed with 0.01 N potassium hydroxide (ethanol solution) using a phenolphthalein solution as an indicator. The unit of the acid value was eq / ton, that is, the equivalent per 1 ton of the sample.
4.樹脂組成
クロロホルム−dに試料樹脂を溶解し、VARIAN製400MHz−NMR装置を用い、1H−NMR分析により樹脂組成を求めた。
4). Resin Composition A sample resin was dissolved in chloroform-d, and a resin composition was determined by 1H-NMR analysis using a VARIAN 400 MHz-NMR apparatus.
5.ペースト粘度
粘度の測定はサンプル温度25℃において、BH型粘度計(東機産業社製,)を用い、
20rpmにおいて測定を実施した。
5. Paste viscosity Viscosity was measured at a sample temperature of 25 ° C using a BH viscometer (manufactured by Toki Sangyo Co., Ltd.)
Measurements were performed at 20 rpm.
6.導電性ペーストの貯蔵安定性
導電性ペーストをポリ容器に入れ、密栓したものを40℃で1ヶ月貯蔵した。貯蔵後に粘度測定及び上記5.導電性積層体テストピースにより作製したテストピースの評価を行った。
○:著しい粘度変化はなく、初期の比抵抗、鉛筆硬度および密着性を維持している。
×:著しい粘度上昇(初期粘度の2倍以上)または著しい粘度低下(初期粘度の1/2以
下)、および/または、比抵抗、鉛筆硬度および/または密着性の低下、のいずれかが認められる。
6). Storage stability of conductive paste The conductive paste was placed in a plastic container and sealed and stored at 40 ° C. for 1 month. 4. Viscosity measurement after storage and above 5. The test piece produced by the conductive laminate test piece was evaluated.
◯: There is no significant change in viscosity, and the initial specific resistance, pencil hardness and adhesion are maintained.
X: Either a significant increase in viscosity (more than twice the initial viscosity) or a significant decrease in viscosity (1/2 or less of the initial viscosity) and / or a decrease in specific resistance, pencil hardness and / or adhesion are observed. .
7.導電性積層体テストピースの作成
厚み100μmのアニール処理をしたPETフィルム(東レ社製ルミラーS)およびITO膜(尾池工業(株)製、KH300)のそれぞれに、200メッシュのポリエステルスクリーンを用いてスクリーン印刷法により導電性ペーストを印刷し、幅25mm、長さ450mmのべた塗りパターンを形成し、次いで熱風循環式乾燥炉にて120℃で30分加熱したものを導電性積層体テストピースとした。なお、乾燥膜厚が6〜10μmになるように印刷時の塗布厚を調整した。
7). Preparation of conductive laminate test piece A 200-mesh polyester screen was used for each of a PET film (Lumirror S manufactured by Toray Industries, Inc.) and an ITO film (KH300 manufactured by Oike Kogyo Co., Ltd.) that had been annealed to a thickness of 100 μm. A conductive paste was printed by a screen printing method to form a solid coating pattern having a width of 25 mm and a length of 450 mm, and then heated at 120 ° C. for 30 minutes in a hot air circulation drying oven to obtain a conductive laminate test piece. . In addition, the coating thickness at the time of printing was adjusted so that a dry film thickness might be 6-10 micrometers.
8.密着性
前記導電性積層体テストピースを用いてJIS K−5400−5−6:1990に従って、セロテープ(登録商標)(ニチバン(株)製)を用い、剥離試験により評価した。但し、格子パターンの各方向のカット数は11個、カット間隔は1mmとした。100/100は剥離がなく密着性が良好なことを示し、0/100は全て剥離してしまったことを表す。
8). Adhesiveness According to JIS K-5400-5-6: 1990 using the said electroconductive laminated body test piece, it evaluated by the peeling test using the cello tape (trademark) (made by Nichiban Co., Ltd.). However, the number of cuts in each direction of the lattice pattern was 11, and the cut interval was 1 mm. 100/100 indicates that there is no peeling and good adhesion, and 0/100 indicates that all are peeled off.
9.比抵抗
前記導電性積層体テストピースのシート抵抗と膜厚を測定し、比抵抗を算出した。膜厚はゲージスタンドST−022(小野測器社製)を用い、PETフィルムの厚みをゼロ点として硬化塗膜の厚みを5点測定し、その平均値を用いた。シート抵抗はMILLIOHMMETER4338B(HEWLETT PACKARD社製)を用いてテストピース4枚について測定し、その平均値を用いた。尚、本ミリオームメーターで検出できる範囲は1×10-2以下(Ω・cm)であり、1×10-2(Ω・cm)以上の比抵抗は測定限界外となる。
9. Specific Resistance The sheet resistance and film thickness of the conductive laminate test piece were measured, and the specific resistance was calculated. For the film thickness, a gauge stand ST-022 (manufactured by Ono Sokki Co., Ltd.) was used, and the thickness of the cured coating film was measured at five points with the thickness of the PET film as the zero point, and the average value was used. The sheet resistance was measured for four test pieces using MILLIOHMMETER 4338B (manufactured by HEWLETT PACKARD), and the average value was used. The range that can be detected by this milliohm meter is 1 × 10 −2 (Ω · cm) or less, and a specific resistance of 1 × 10 −2 (Ω · cm) or more is outside the measurement limit.
10.鉛筆硬度
導電性積層体テストピースを厚さ2mmのSUS304板上に置き、JIS K 5600−5−4:1999に従って鉛筆硬度を測定した。
10. Pencil Hardness The conductive laminate test piece was placed on a 2 mm thick SUS304 plate, and the pencil hardness was measured according to JIS K 5600-5-4: 1999.
11.耐湿熱性試験:
導電性積層体テストピースを、80℃で300時間加熱し、次いで85℃、85%RH(相対湿度)で300時間加熱し、その後24時間常温で放置した後、各種評価を行った。
11 Moisture and heat resistance test:
The conductive laminate test piece was heated at 80 ° C. for 300 hours, then heated at 85 ° C. and 85% RH (relative humidity) for 300 hours, and then allowed to stand at room temperature for 24 hours, after which various evaluations were performed.
12.レーザーエッチング加工適性の評価
スクリーン印刷法により、ポリエステル基材(東レ社製ルミラーS(厚み100μm))上に、導電性ペーストを2.5×10cmの長方形に印刷塗布した。スクリーン版としてT400ステンレスメッシュ(乳剤厚10μm、線径23μm(東京プロセスサービス社製))を用い、スキージ速度150mm/sで印刷した。印刷塗布後、熱風循環式乾燥炉にて120℃で30分間の乾燥を行って導電性薄膜を得た。尚、膜厚は5〜12μmとなるようにペーストを希釈調整した。次いで、上記方法にて作成した導電性薄膜にレーザーエッチング加工を行い、図1に示す長さ50mmの4本の直線部分を有するパターンを作製し、レーザーエッチング加工適性評価試験片とした。上記直線部分の線間のレーザーエッチング加工は、ビーム径30μmのレーザー光を60μmピッチで各2回走査することによって行った。レーザー光源にはファイバーレーザーを用い、Q変調周波数200kHz、出力10W、走査速度2700mm/sとした。
12 Evaluation of laser etching process suitability A conductive paste was printed and applied in a 2.5 × 10 cm rectangle on a polyester base material (Lumirror S (thickness: 100 μm) manufactured by Toray Industries, Inc.) by a screen printing method. A T400 stainless mesh (emulsion thickness 10 μm, wire diameter 23 μm (manufactured by Tokyo Process Service)) was used as a screen plate, and printing was performed at a squeegee speed of 150 mm / s. After the printing application, drying was performed at 120 ° C. for 30 minutes in a hot air circulation drying oven to obtain a conductive thin film. The paste was diluted and adjusted so that the film thickness was 5 to 12 μm. Next, laser etching processing was performed on the conductive thin film prepared by the above method to prepare a pattern having four straight portions with a length of 50 mm shown in FIG. 1 and used as a test piece for evaluating the suitability for laser etching processing. The laser etching process between the straight line portions was performed by scanning a laser beam having a beam diameter of 30 μm twice at a pitch of 60 μm. A fiber laser was used as the laser light source, and the Q modulation frequency was 200 kHz, the output was 10 W, and the scanning speed was 2700 mm / s.
評価項目、測定条件は以下の通りである。 Evaluation items and measurement conditions are as follows.
(レーザーエッチング加工幅評価)
前記レーザーエッチング加工適性評価試験片において、導電性薄膜が除去された部位の線幅を測定した。測定は、レーザー顕微鏡(キーエンスVHX−1000)を用いて行い、下記の評価判断基準で判定した。
○;導電性薄膜が除去された部位のライン幅が28〜32μm
△;導電性薄膜が除去された部位のライン幅が24〜27μmもしくは33〜36μm
×;導電性薄膜が除去された部位のライン幅が23μm以下、もしくは37μm以上
(Laser etching processing width evaluation)
In the laser etching process suitability evaluation test piece, the line width of the portion where the conductive thin film was removed was measured. The measurement was performed using a laser microscope (Keyence VHX-1000), and the determination was made according to the following evaluation criteria.
○: The line width of the portion where the conductive thin film is removed is 28 to 32 μm.
Δ: The line width of the portion where the conductive thin film is removed is 24 to 27 μm or 33 to 36 μm.
X: The line width of the portion where the conductive thin film has been removed is 23 μm or less, or 37 μm or more
(レーザーエッチング加工適性評価(1)細線両端間導通性)
前記レーザーエッチング加工適性評価試験片において、細線1b、2b、3b、4bの両端の間の導通が確保されているかにより評価した。具体的には、端子1a−端子1c間、端子2a−端子2c間、端子3a−端子3c間、端子4a−端子4c間、のそれぞれについてテスターを当てて導通の有無を確認し、下記評価基準で判定した。
○;4本の細線の全てについて細線の両端間に導通がある
△;4本の細線のうち、1〜3本について細線の両端間に導通がない
×;4本の細線の全てについて細線の両端間に導通がない
(レーザーエッチング加工適性評価(2)隣接細線間絶縁性)
前記レーザーエッチング加工適性評価試験片において、隣接する細線の間の絶縁が確保されているかにより評価した。具体的には、端子1a−端子2a間、端子2a−端子3a間、端子3a−端子4a間、のそれぞれについてテスターを当てて導通の有無を確認し、下記評価基準で判定した。
○;すべての隣接細線間が絶縁されている
△;一部の隣接細線間が絶縁されている
×;すべての隣接細線間が絶縁されていない
(Laser etching process suitability evaluation (1) Conductivity between both ends of fine wire)
In the laser etching process suitability evaluation test piece, the evaluation was made based on whether or not conduction between both ends of the thin wires 1b, 2b, 3b, and 4b was secured. Specifically, the presence / absence of conduction is confirmed by applying a tester between each of the terminals 1a and 1c, between the terminals 2a and 2c, between the terminals 3a and 3c, and between the terminals 4a and 4c. Judged by.
○: Conduction between both ends of the fine wire for all four fine wires. Δ: Conductivity between both ends of the thin wires for one of the four thin wires ×: Fine wires for all four thin wires No conduction between both ends (Laser etching process suitability evaluation (2) Insulation between adjacent thin wires)
The laser etching process suitability evaluation test piece was evaluated based on whether insulation between adjacent thin wires was ensured. Specifically, the presence / absence of conduction was confirmed by applying a tester between each of the terminals 1a and 2a, between the terminals 2a and 3a, and between the terminals 3a and 4a, and judged according to the following evaluation criteria.
○: All adjacent fine wires are insulated △: Some adjacent fine wires are insulated ×: All adjacent fine wires are not insulated
(導電性薄膜が除去された部位の残渣の評価)
前記レーザーエッチング加工適性評価試験片において、導電性薄膜が除去された部位をレーザー顕微鏡で観察し、残渣の付着有無を下記評価基準により判定した。
○:導電性薄膜が除去された部位に残渣がない。
△:導電性薄膜が除去された部位に残渣が多少ある。
×:導電性薄膜が除去された部位に残渣が多く見られる。
(Evaluation of residue at the site where the conductive thin film has been removed)
In the laser etching process suitability evaluation test piece, the site from which the conductive thin film was removed was observed with a laser microscope, and the presence or absence of residue was determined according to the following evaluation criteria.
○: There is no residue at the site where the conductive thin film has been removed.
Δ: There is some residue at the site where the conductive thin film has been removed.
X: Many residues are observed at the site where the conductive thin film has been removed.
(レーザーエッチング後の導電性薄膜と基材との密着性の評価)
前記レーザーエッチング加工適性評価試験片における導電性薄膜が除去された部位に挟まれている導電性薄膜が残存している部位の、基材に対する密着性を、セロテープ(登録商標)(ニチバン(株)製)を用いたテープ剥離テストにより、評価した。この評価は、試験片作成の24時間後直後(初期)とその後さらに85℃、85%RH(相対湿度)の湿熱環境下に120時間静置しさらに24時間常温で静置した後(耐湿熱試験後)に行った。
○:剥離がない。 △:一部剥離する。×:全て剥離する。
(Evaluation of adhesion between conductive thin film and substrate after laser etching)
The adhesiveness to the substrate of the portion where the conductive thin film is sandwiched between the portions where the conductive thin film has been removed in the laser etching processing suitability evaluation test piece is measured with Cellotape (registered trademark) (Nichiban Co., Ltd.) The product was evaluated by a tape peeling test using This evaluation was performed immediately after 24 hours (initial stage) after the test piece was prepared, and after that, after further standing in a moist heat environment of 85 ° C. and 85% RH (relative humidity) for 120 hours and then at room temperature for 24 hours (moisture heat resistance) After the test).
○: No peeling. Δ: Partially peeled off. X: All peel.
樹脂の製造例
ポリエステル樹脂P−1の製造例
攪拌機、コンデンサー、及び温度計を具備した反応容器にテレフタル酸700部、イソフタル酸700部、無水トリメリット酸16.9部、エチレングリコール983部、2−メチル−1,3−プロパンジオール154部を仕込み、窒素雰囲気2気圧加圧下、160℃から230℃まで3時間かけて昇温し、エステル化反応を行った。放圧後、テトラブチルチタネート0.92部を仕込み、次いで系内を徐々に減圧していき、20分かけて5mmHgまで減圧し、さらに0.3mmHg以下の真空下、260℃にて40分間重縮合反応を行った。次いで、窒素気流下、220℃まで冷却し、無水トリメリット酸を50.6部投入し、30分間反応を行いポリエステル樹脂を得た。得られた共重合ポリエステル樹脂P−1の組成及び物性を表1に示した。
Example of Resin Production Example of Polyester Resin P-1 In a reaction vessel equipped with a stirrer, a condenser, and a thermometer, 700 parts of terephthalic acid, 700 parts of isophthalic acid, 16.9 parts of trimellitic anhydride, 983 parts of ethylene glycol, 2 -154 parts of methyl-1,3-propanediol were charged, and the temperature was increased from 160 ° C to 230 ° C over 3 hours under a pressure of 2 atmospheres in a nitrogen atmosphere to carry out an esterification reaction. After releasing the pressure, 0.92 part of tetrabutyl titanate was added, and then the pressure inside the system was gradually reduced to 5 mmHg over 20 minutes, and then the pressure was reduced to 260 ° C. for 40 minutes under a vacuum of 0.3 mmHg or less. A condensation reaction was performed. Subsequently, it cooled to 220 degreeC under nitrogen stream, 50.6 parts of trimellitic anhydride was thrown in, and it reacted for 30 minutes, and obtained the polyester resin. The composition and physical properties of the obtained copolyester resin P-1 are shown in Table 1.
ポリエステル樹脂P−2〜P−11の製造例
ポリエステル樹脂P−1の製造例においてモノマーの種類と配合比率を変更し、ポリエステル樹脂P−2〜P−11を製造した。得られた共重合ポリエステル樹脂の組成及び樹脂物性を表1〜2に示した。
Manufacture example of polyester resin P-2-P-11 In the manufacture example of polyester resin P-1, the kind and compounding ratio of a monomer were changed, and polyester resin P-2-P-11 was manufactured. The composition and resin physical properties of the obtained copolyester resin are shown in Tables 1-2.
BPE−20F:ビスフェノールAのエチレンオキサイド付加物(三洋化成工業社製)
BPX−11 :ビスフェノールAのプロピレンオキサイド付加物(旭電化社製)
BPE-20F: Ethylene oxide adduct of bisphenol A (manufactured by Sanyo Chemical Industries)
BPX-11: Propylene oxide adduct of bisphenol A (Asahi Denka Co., Ltd.)
ポリウレタン樹脂U−1の製造例
攪拌機、コンデンサー、温度計を具備した反応容器にポリエステル樹脂P−7を1000部、ネオペンチルグリコール(NPG)を80部、ジメチロールブタン酸(DMBA)を90部投入した後、エチルジグリコールアセテート(EDGAC)1087部仕込み、85℃において溶解した。その後、4,4’−ジフェニルメタンジイソシアネート(MDI)を460部加え、85℃、2時間反応を行った後、触媒としてジブチルチンジラウレートを0.5部添加し、85℃でさらに4時間反応させた。ついで、EDGAC1940部で溶液を希釈し、ポリウレタン樹脂U−1の溶液を得た。得られたポリウレタン樹脂溶液の固形分濃度は35質量%であった。このようにして得た樹脂溶液をポリプロピレンフィルム上に滴下し、ステンレス鋼製のアプリケーターを用いて延展し、樹脂溶液の薄膜を得た。これを120℃に調整した熱風乾燥機内に3時間静置して溶剤を揮散させ、次いでポリプロピレンフィルムから樹脂薄膜を剥がし、フィルム状の乾燥樹脂薄膜を得た。乾燥樹脂薄膜の厚みは約30μmであった。左記乾燥樹脂薄膜をポリウレタン樹脂U−1の試料樹脂として、各種樹脂物性の評価結果を表3に示した。
Production Example of Polyurethane Resin U-1 In a reaction vessel equipped with a stirrer, a condenser and a thermometer, 1000 parts of polyester resin P-7, 80 parts of neopentyl glycol (NPG), and 90 parts of dimethylolbutanoic acid (DMBA) are charged. Then, 1087 parts of ethyl diglycol acetate (EDGAC) was charged and dissolved at 85 ° C. Thereafter, 460 parts of 4,4′-diphenylmethane diisocyanate (MDI) was added and reacted at 85 ° C. for 2 hours, and then 0.5 part of dibutyltin dilaurate was added as a catalyst and reacted at 85 ° C. for another 4 hours. . Next, the solution was diluted with 1940 parts of EDGAC to obtain a solution of polyurethane resin U-1. The solid content concentration of the obtained polyurethane resin solution was 35% by mass. The resin solution thus obtained was dropped on a polypropylene film and spread using a stainless steel applicator to obtain a resin solution thin film. This was left in a hot air dryer adjusted to 120 ° C. for 3 hours to volatilize the solvent, and then the resin thin film was peeled off from the polypropylene film to obtain a film-like dry resin thin film. The thickness of the dry resin thin film was about 30 μm. Table 3 shows the evaluation results of various resin properties, using the dry resin thin film on the left as a sample resin of polyurethane resin U-1.
ポリウレタン樹脂U−2〜U−8の製造例
ポリウレタン樹脂U−2〜U−8は、ポリエステルポリオール、イソシアネートと反応する基を有する化合物及びポリイソシアネートを表3に示すものに代えた以外は、ポリウレタン樹脂U−1の製造例と同様の方法にて製造した。ポリウレタン樹脂U−2〜U−8の樹脂物性の評価結果を表3に示した。
Production Examples of Polyurethane Resins U-2 to U-8 Polyurethane resins U-2 to U-8 are polyurethanes except that the polyester polyol, the compound having a group that reacts with isocyanate, and the polyisocyanate are replaced with those shown in Table 3. It manufactured by the method similar to the manufacture example of resin U-1. Table 3 shows the evaluation results of the physical properties of the polyurethane resins U-2 to U-8.
DMBA:ジメチロールブタン酸
NPG:ネオペンチルグリコール
DMH:2−ブチル−2−エチル−1,3−プロパンジオール
MDI:4,4’−ジフェニルメタンジイイソシアネート
IPDI:イソホロンジイソシアネート
DMBA: dimethylol butanoic acid NPG: neopentyl glycol DMH: 2-butyl-2-ethyl-1,3-propanediol MDI: 4,4′-diphenylmethane diisocyanate IPDI: isophorone diisocyanate
実施例1
ポリエステル樹脂P−1を固形分濃度が35質量%となるようにEDGACに溶解した溶液2860部(固形部換算1000部)、フレーク状銀粉1を7,888部、レベリング剤として共栄社化学(株)製のMKコンクを71部、分散剤としてビックケミー・ジャパン(株)製のDisperbyk130を30部、溶剤としてEDGACを300部を配合し、チルド三本ロール混練り機に3回通して分散した。その後、得られた導電性ペーストを所定のパターンに印刷後、120℃×30分間乾燥し、導電性薄膜を得た。本導電性薄膜を用いて基本物性を測定し、次いで、レーザーエッチング加工の検討を行った。ペーストおよびペースト塗膜、レーザーエッチング加工性の評価結果を表4に示した。
Example 1
Kyoeisha Chemical Co., Ltd. 2860 parts (1000 parts in terms of solid part) of a solution in which polyester resin P-1 is dissolved in EDGAC so that the solid content concentration is 35% by mass, 7,888 parts of flaky silver powder 1 as a leveling agent 71 parts of MK Conk made, 30 parts of Disperbyk 130 made by Big Chemie Japan Co., Ltd. as a dispersant and 300 parts of EDGAC as a solvent were blended and dispersed by passing 3 times through a chilled three-roll kneader. Thereafter, the obtained conductive paste was printed in a predetermined pattern and then dried at 120 ° C. for 30 minutes to obtain a conductive thin film. The basic physical properties were measured using this conductive thin film, and then laser etching processing was examined. Table 4 shows the evaluation results of the paste, paste coating film, and laser etching processability.
実施例2〜13
導電性ペーストの樹脂および配合を変えて実施例2〜17を実施した。導電性ペーストの配合および評価結果を表4〜表6に示した。実施例においてはオーブン120℃×30分という比較的低温かつ短時間の加熱により良好な塗膜物性を得ることができた。またITO膜への密着性、湿熱環境試験後の密着性も良好であった。
Examples 2-13
Examples 2 to 17 were carried out by changing the resin and the composition of the conductive paste. The formulation and evaluation results of the conductive paste are shown in Tables 4 to 6. In the examples, good film properties could be obtained by heating at a relatively low temperature of 120 ° C. for 30 minutes in an oven at a relatively low temperature. Also, the adhesion to the ITO film and the adhesion after the wet heat environment test were good.
なお、表4〜表7において、バインダ樹脂、導電粉末、添加剤及び溶剤は以下のものを用いた。
バインダ樹脂PH-1:InChem製PKKH(フェノキシ樹脂、数平均分子量14000、Tg=71℃)
銀粉1:フレーク状銀粉(D50:2μm)
銀粉2:球状銀粉(D50:1μm)
カーボンブラック:東海カーボン(株)製♯4400
ケッチェンブラック:ライオン(株)製ケッチェンECP600JD
グラファイト粉:(株)中越黒鉛工業所製のグラファイトBF
硬化剤:旭化成ケミカルズ(株)製MF−K60X
硬化触媒:共同薬品(株)製KS1260
レベリング剤:共栄社化学(株)MKコンク
分散剤1:ビックケミー・ジャパン(株)社製のDisperbyk130
分散剤2:ビックケミー・ジャパン(株)社製Disperbyk2155
分散剤3:ビックケミー・ジャパン(株)社製のDisperbyk180
添加剤1:日本アエロジル(株)製シリカR972
添加剤2:ナガセケムテックス(株)製 NIR-AM1
添加剤3:共栄社化学(株)製 ライトアクリレートPE−3A(ペンタエリスリトールトリアクリレート)
EDGAC:(株)ダイセル製エチルジグリコールアセテート
BMGAC:(株)ダイセル製ブチルグリコールアセテート
BDGAC:(株)ダイセル製ブチルジグリコールアセテート
TPOL :日本テルペン化学(株)製ターピネオール
In Tables 4 to 7, the following binder resins, conductive powders, additives and solvents were used.
Binder resin PH-1: PKKH manufactured by InChem (phenoxy resin, number average molecular weight 14000, Tg = 71 ° C.)
Silver powder 1: flaky silver powder (D50: 2 μm)
Silver powder 2: Spherical silver powder (D50: 1 μm)
Carbon black: Tokai Carbon Co., Ltd. # 4400
Ketjen Black: Ketjen ECP600JD made by Lion Corporation
Graphite powder: Graphite BF manufactured by Chuetsu Graphite Co., Ltd.
Curing agent: MF-K60X manufactured by Asahi Kasei Chemicals Corporation
Curing catalyst: Kyodo Pharmaceutical Co., Ltd. KS1260
Leveling agent: Kyoeisha Chemical Co., Ltd. MK Conk Dispersant 1: Disperbyk130 manufactured by Big Chemie Japan Co., Ltd.
Dispersant 2: Disperbyk 2155 manufactured by Big Chemie Japan Co., Ltd.
Dispersant 3: Disperbyk180 manufactured by Big Chemie Japan Co., Ltd.
Additive 1: Silica R972 manufactured by Nippon Aerosil Co., Ltd.
Additive 2: NIR-AM1 manufactured by Nagase ChemteX Corporation
Additive 3: Light acrylate PE-3A (pentaerythritol triacrylate) manufactured by Kyoeisha Chemical Co., Ltd.
EDGAC: Ethyl diglycol acetate manufactured by Daicel Corp. BMGAC: Butyl glycol acetate manufactured by Daicel Corp. BDGAC: Butyl diglycol acetate manufactured by Daicel Corp. TPOL: Terpineol manufactured by Nippon Terpene Chemical Co., Ltd.
比較例1
ラウリルカルボン酸銀(1000g)とブチルアミン(480g)とをトルエン(10L)に溶解させた。次いで、蟻酸(150g)を滴下し、そのまま室温で1.5時間攪拌した。大量のメタノールを加えると銀ナノ粒子の凝集物が沈殿するのでこれをデカンテーションした。デカンテーションを3回繰り返したのち、沈殿物を減圧下で乾燥させた。次いで、得られた沈殿物1000g(うち920g銀、カルボン酸銀アミン錯体80g)をターピネオール1860g中へ再分散させ、銀ナノ粒子(銀粉3)を含んだ導電性ペーストを得た。得られた銀粉3は透過型電子顕微鏡写真より粒子径が約10nmであった。導電性ペーストの固形分濃度は35質量%であった。得られた導電性ペーストを用いて実施例と同様に導電性積層体テストピースおよびレーザーエッチング加工適性評価試験片を作成し、実施例と同様に評価を行った。評価結果を表7に示した。本導電性銀ペースト組成物は初期塗膜物性が顕著に劣り、特には密着性に乏しく、実用には耐えないものであった。
Comparative Example 1
Silver lauryl carboxylate (1000 g) and butylamine (480 g) were dissolved in toluene (10 L). Next, formic acid (150 g) was added dropwise, and the mixture was stirred at room temperature for 1.5 hours. When a large amount of methanol was added, an aggregate of silver nanoparticles precipitated and was decanted. After repeating the decantation three times, the precipitate was dried under reduced pressure. Next, 1000 g of the resulting precipitate (of which 920 g silver, 80 g silver carboxylate amine complex) was redispersed in 1860 g terpineol to obtain a conductive paste containing silver nanoparticles (silver powder 3). The obtained silver powder 3 had a particle diameter of about 10 nm from a transmission electron micrograph. The solid content concentration of the conductive paste was 35% by mass. Using the obtained conductive paste, a conductive laminate test piece and a laser etching processability evaluation test piece were prepared in the same manner as in the example, and the evaluation was performed in the same manner as in the example. The evaluation results are shown in Table 7. This electroconductive silver paste composition was remarkably inferior in initial coating film properties, in particular, poor in adhesion, and could not withstand practical use.
比較例2
ターピネオールにドデシルアミンを溶解し、固形分濃度12重量%の溶液とした。この溶液1000部(固形120重量部)に、銀粉4(球状銀粉(D50=1μm)を8083部、さらに平均粒径1.5μmとなるようにビーズミルで粉砕したガラスフリット((酸化ビスマス(Bi2O3)を主成分するガラス粉末(酸化ビスマス含有量80.0〜99.9%)を250部加えて混合を継続し、均一となってから、この溶液を三本ロールミルで分散し、ガラスフリット含有導電性ペーストを作製した。得られた導電性ペーストを用いて実施例と同様に導電性積層体テストピースおよびレーザーエッチング加工適性評価試験片を作成し、実施例と同様に評価を行った。評価結果を表7に示した。本導電性銀ペースト組成物は初期塗膜物性が顕著に劣り、特には密着性に乏しく、実用には耐えないものであった。また、レーザーエッチング加工性が顕著に劣り、照射部位よりも広い範囲で照射したレーザービームの幅よりも大幅に広い巾の塗膜が剥離されてしまい、所定の線幅を加工することはできなかった。また、レーザーエッチング加工後の細線部分の密着性および耐湿熱性にも乏しかった。
Comparative Example 2
Dodecylamine was dissolved in terpineol to obtain a solution having a solid content of 12% by weight. To 1000 parts of this solution (solid 120 parts by weight), silver powder 4 (spherical silver powder (D50 = 1 μm)) 8083 parts, and glass frit ((bismuth oxide (Bi 2 O 3)) pulverized with a bead mill to an average particle size of 1.5 μm. After adding 250 parts of glass powder (bismuth oxide content 80.0-99.9%) as a main component and mixing, this solution is dispersed with a three-roll mill, and glass frit-containing conductive material is obtained. Using the obtained conductive paste, a conductive laminate test piece and a laser etching processability evaluation test piece were prepared in the same manner as in the example, and evaluated in the same manner as in the example. The conductive silver paste composition has a remarkably inferior initial coating film property, particularly poor adhesion, and cannot be put into practical use. The coating process having a significantly wider width than the width of the laser beam irradiated in a wider range than the irradiated part was peeled off, and the predetermined line width could not be processed. Also, the adhesion of the thin wire after laser etching and the heat and humidity resistance were poor.
本発明のレーザーエッチング加工用導電性ペーストは、レーザーエッチング加工適性を保持しながら、湿熱環境信頼性に優れ、導電性薄膜としての塗膜耐久性を維持することができる導電性薄膜を提供することができ、例えば、携帯電話、ノートパソコン、電子書籍等に搭載されるタッチパネルに用いられる導電性ペーストとして有用である。 The conductive paste for laser etching processing of the present invention provides a conductive thin film that is excellent in wet heat environment reliability while maintaining the suitability of laser etching processing and can maintain the durability of the coating film as a conductive thin film. For example, it is useful as a conductive paste used for a touch panel mounted on a mobile phone, a notebook computer, an electronic book, or the like.
1a、2a、3a、4a : 端子1a、2a、3a、4a
1b、2b、3b、4b : 細線1b、2b、3b、4b
1c、2c、3c、4c : 端子1c、2c、3c、4c
5 : レーザーエッチング加工適性評価試験片上に形成されるパターン
1a, 2a, 3a, 4a: Terminals 1a, 2a, 3a, 4a
1b, 2b, 3b, 4b: Fine wires 1b, 2b, 3b, 4b
1c, 2c, 3c, 4c: Terminals 1c, 2c, 3c, 4c
5: Pattern formed on test piece for evaluating laser etching process suitability
Claims (12)
レーザーエッチング加工によりL/Sが50/50μm以下のタッチパネルの回路配線を、透明導電層を有する基材上、もしくは透明導電層を有し該透明導電層がエッチングによって一部除去された基材上に形成するために用いられるレーザーエッチング加工用導電性ペースト。 Binder resin (A) made of thermoplastic resin, metal powder (B) and organic solvent (C), the binder resin (A) has a number average molecular weight of 5,000 to 60,000, and It is a thermoplastic resin having a glass transition temperature of 150 ° C. or less, and the center diameter (D50) of the metal powder (B) is 4 μm or less,
Touch panel circuit wiring with a L / S of 50/50 μm or less by laser etching processing on a substrate having a transparent conductive layer, or on a substrate having a transparent conductive layer and the transparent conductive layer partially removed by etching Conductive paste for laser etching process used to form in.
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JP2014183247A Active JP5987878B2 (en) | 2012-07-20 | 2014-09-09 | Conductive paste for laser etching, electrical circuit and touch panel |
JP2014257177A Active JP5773298B2 (en) | 2012-07-20 | 2014-12-19 | Conductive paste for laser etching, electrical circuit and touch panel |
JP2015019054A Active JP5987930B2 (en) | 2012-07-20 | 2015-02-03 | Conductive paste for laser etching, electrical circuit and touch panel |
JP2015141303A Active JP6363048B2 (en) | 2012-07-20 | 2015-07-15 | Conductive paste, conductive thin film and conductive laminate for laser etching |
JP2017049529A Active JP6458820B2 (en) | 2012-07-20 | 2017-03-15 | Conductive paste, conductive thin film and conductive laminate for laser etching |
JP2017221867A Pending JP2018067548A (en) | 2012-07-20 | 2017-11-17 | Conductive paste for laser etching processing, conductive thin film and conductive laminate |
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JP2014183247A Active JP5987878B2 (en) | 2012-07-20 | 2014-09-09 | Conductive paste for laser etching, electrical circuit and touch panel |
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JP2017126771A (en) | 2017-07-20 |
JP2015127958A (en) | 2015-07-09 |
TWI620202B (en) | 2018-04-01 |
KR20180031820A (en) | 2018-03-28 |
JP5773292B2 (en) | 2015-09-02 |
CN104488040A (en) | 2015-04-01 |
JP2020053393A (en) | 2020-04-02 |
KR102007129B1 (en) | 2019-08-02 |
JP2015026618A (en) | 2015-02-05 |
JP5987878B2 (en) | 2016-09-07 |
JP5880650B2 (en) | 2016-03-09 |
JP2014225709A (en) | 2014-12-04 |
JP2015135817A (en) | 2015-07-27 |
JP6363048B2 (en) | 2018-07-25 |
JPWO2014013899A1 (en) | 2016-06-30 |
TW201515022A (en) | 2015-04-16 |
CN104488040B (en) | 2018-08-03 |
JP6458820B2 (en) | 2019-01-30 |
JP2018067548A (en) | 2018-04-26 |
TW201409489A (en) | 2014-03-01 |
KR20150037861A (en) | 2015-04-08 |
JP2015181207A (en) | 2015-10-15 |
JP5773298B2 (en) | 2015-09-02 |
WO2014013899A1 (en) | 2014-01-23 |
JP7059240B2 (en) | 2022-04-25 |
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