JP5964957B2 - Structure for high-speed signal integrity in a semiconductor package with a single metal layer substrate - Google Patents

Description

  The present application relates generally to semiconductor devices and processes, and more specifically to configurations and fabrication methods for structures for high-speed signal integrity in semiconductor packages with single metal layer substrates and wire bonds.

  A semiconductor device typically includes an integrated circuit (IC) chip and a substrate that is integrated with the chip in a package that encapsulates the device. In order to function as intended in modern semiconductor devices, any pair of differential signals propagating through the device will be within the predetermined limits to the relative magnitude and relative phase angle of the signal wave. Are required to be matched.

  In integrated circuit (IC) chip designs for differential signals, building blocks can use circuit components, which have been matched by combining critical layouts for components such as transistors and resistors with each other. ing.

  In board or carrier designs that carry signals from an IC chip to, for example, a printed circuit board (PCB), designers often encounter similar requirements. That is, there is usually a constraint to keep the mismatch of the paired differential signal paths within limits. As an example, for a 10 GHz signal propagating in a polymer substrate (as is common in the prior art), the wavelength is only about 1.5 cm. A differential signal pair requires only a 0.75 mm mismatch in the total length of the signal path to create a 5% error in phase angle. This mismatch necessarily involves not only the length of the metal traces on the substrate and the length of the signal path, including the length of the bonding wires that connect the IC chip to the substrate, but also the proximity and parallelism of the traces and bonding wires. However, parallelism and proximity often have a 10% mismatch budget. The sum of these parameters that contribute to the mismatch is often referred to as the mismatch budget.

  The package system mismatch budget is based on total length mismatch, metal trace thickness and width, trace and bond wire proximity and parallelism, and through-hole and via diameters along the signal path and plated metal thickness. Involved.

  In today's technology, a solution to these constraints is to utilize a substrate with multiple metal layers. Multiple metal layers provide flexibility to route differential signal pairs with wires from the IC chip bond pads to the stitch pads formed by the top level metal of the substrate, the top metal layers being metal filled Traces are also formed that lead the signal to the formed via hole, which leads to the metal layer below the top level. Thereafter, additional traces can be formed by the underlying metal layer, which can result in routing signals to the contact pads as the output terminals of the substrate. Often, solder balls or metal studs are affixed to contact pads and serve as connectors to external circuit elements such as printed circuit boards.

  In high-frequency semiconductor devices, applicants recognize the unprecedented pursuit for higher frequencies and the constant pursuit for lower costs as major market trends. In view of these trends, Applicants considered that the presence of metal filled vias between metal multilayers significantly burdened the mismatch budget of high speed signal packages. The reason is seen in the inherent shortcomings of vias. That is, the possibility of dimensional mismatch in the signal path is inevitably increased by additional drilling of via holes, via hole wall electroplating, and related manufacturing processes, and an unavoidable inability in the electrical impedance created by the vias. Although continuity can add a phase angle mismatch between signals and, at the end of the day, should never be neglected, multi-layer substrates with vias can be unacceptably expensive.

  In order to solve the via mismatch problem, Applicants have chosen a substrate with a single metal layer that completely eliminates the need for via holes. The metal layer is patterned into an array of contact pads sized for solder bumps and an array of stitch pads for wire bonding. Using the pad array, the zone of the pad is selected as the basis for the transmitter / receiver cell.

  Applicant further recognizes that for high frequency operation of transmitter / receiver cells, the differential pair needs to have tight coupling within the pair, but the differential pair needs to be placed next to each other. doing. This arrangement makes it extremely difficult to achieve an acceptably small crosstalk between the differential pairs. Applicants have solved the problem of minimizing crosstalk between two tightly spaced differential line pairs by placing grounded traces and wire bonds between the two pairs.

  In wire bonded devices, the tightly packed arrangement of differential pairs requires tightly spaced stitch pads (landing pads on the substrate to receive wire bonds from the integrated circuit chip). In order to make room for the stitch pads available in the transmitter / receiver unit cell, Applicants depopulate one contact pad per 2 × 3 array, thereby placing it in close proximity to the tight. To create a space for two differential pairs of stitch pads to be used, and have at least one additional stitch pad available to the wire at electrical ground potential, placed between the pair as a shield. In the depopulated area, enough space is left to place connection traces between each stitch pad and contact pad in a manner that is aligned as required for length and parallelism. Care is taken to bond the wires connecting the stitch pads to the respective bond pads on the chip surface in parallel and equal length arcs. The resulting differential conductor pair is matched in terms of length and parallelism in a narrow window.

  The differential pair is noise shielded by a ground trace or a power trace. With these arrangements of transmitter / receiver cells, high-speed products in the 10 GHz range are possible with excellent signal integrity.

FIG. 1 illustrates a perspective view of a transmitter / receiver cell for conducting high frequency signals according to an exemplary embodiment.

FIG. 2 is a cross section of an individual contact pad with solder bumps attached to contact an external substrate.

FIG. 3 shows a top view of a substrate zone including contact pads and stitch pads in an exemplary arrangement.

FIG. 4 is a top view of a stitch pad in a substrate zone, the pad including bonding wires connecting the stitch pad to a chip bond pad.

FIG. 5 is a top view of one embodiment of a quad duplex high speed differential transceiver.

  FIG. 1 illustrates an exemplary transmitter / receiver cell, generally designated 100, for conducting high frequency signals with integrity in a semiconductor package according to one embodiment of the present invention. The semiconductor chip 101 is attached to the substrate 103 using an adhesive attachment layer 102 (layer thickness of about 20 μm). In the example of FIG. 1, the chip may have a thickness of about 280 μm, and in other embodiments the thickness may be larger or smaller.

  Located near the edge, the chip 101 has a plurality of metal bond pads 110 suitable for metal wire attachment bonds. In the example of FIG. 1, individual wires of the plurality of wires 120 may have a diameter of about 20-30 μm, which produces a free air ball of about 30-50 μm and a collapsed ball of about 30-60 μm. . In FIG. 1, the bond pads 110 are shown in a linear regular row array with a center-to-center pitch of about 60 μm, but in other embodiments a staggered array of bond pads, a larger or smaller pitch. May have bond pads of different areas, and non-rectangular contours, or any other arrangement. A bond that can be a ball bond, stitch bond, or wedge bond is shown in FIG. 1 as a ball bond with a wire neck about 100 μm high on the ball.

  In the example of FIG. 1, the wire length 121 is about 1000 μm. It should be emphasized that the length of all wires 120 shown in FIG. 1 match within a variation window of less than 5%. In other embodiments, the wire length may be larger or smaller, but the wires have the same length within a variation window of less than 5%.

  As shown in FIG. 1, the substrate 103 includes a carrier 130 made of an insulating material and a metal layer to be patterned, and the metal layer faces the chip 101. The insulating carrier material can be provided by a wide range of low cost materials, for example, the insulating material can be a 50 μm thick tape polyimide or a thicker glass fiber reinforced plastic substrate. By way of example, the metal of the layer can be copper and a preferred thickness can be in the range of about 10-50 μm. The pattern of the metal layer for the exemplary embodiment is shown schematically in FIG. 5 and in enlarged detail in FIG. The pattern includes a row and column array of regularly spaced pads 131 of a size suitable for the contact pads selected for attaching metal bumps such as solder balls, and further includes metal connectors such as bonding wires. Includes an array 133 of alternating pad rows and columns, sized appropriately for the stitch pads, and a network of traces generally indicated at 132 and 135, respectively. Each contact pad 131 may be shaped as a circle or rectangle or a rectangle with rounded corners, and the diameter of the exemplary contact pad 131 may be 375 μm. At the position of the contact pad 131, the insulating carrier presents a via hole 134 having a diameter smaller than the diameter of the contact pad.

  FIG. 2 shows an example of the solder bump 201 attached to the contact pad 131 by filling the via hole 134 in the insulating carrier 130. The contact pad metal must overlap the punched holes for the solder bumps. The contact pad outline may be circular, rectangular, rectangular with rounded corners, hexagonal, or any other suitable shape. In a preferred example where the contact pad 131 has a width of 375 μm, the via hole 134 can be manufactured by punching a hole with a diameter of about 300 μm through the substrate 134. The size of the solder bumps 201 is selected to make a reliable connection to the metal pads 202 on the substrate 203 after reflow. As an example, the metal pad 202 can be made of copper, has a solderable surface (eg, a nickel layer with an outermost thin gold layer), and the size of the reflowed solder bump 201 is metal fatigue And can absorb thermomechanical stress without cracks.

  Referring to FIG. 1, the illustrated example transmitter / receiver cell is three-dimensional. The bonding wire 120 spans the height difference between the chip 101 and the surface of the substrate 103 with a two-dimensional pattern of metal layers. It should be pointed out that the short term “cell” is used herein to refer to the electrical unit required to place two differential pairs of conductive lines side by side for size efficiency purposes. . The coupling of the signal between the differential pair should be less than or equal to 1% of the voltage (−40 dB at 5 GHz). Thus, differential signals exhibit low crosstalk between and within pairs, and good coupling and length matching, so that high frequency signals are conducted with good integrity. A differential pair of conductive lines made up of wires, traces, pads, and bumps conduct electrical high frequency signals together from one endpoint to another. Considering the cross section through the differential pair, it has a total current that is substantially zero. The two-dimensional units of pads and traces required for the two differential pairs of cells are referred to herein as “zones”. An example of a zone is illustrated in FIG. 1 (the fact that the exemplary zone shown in FIG. 1 can only be part of a larger patterned substrate area surrounding an attached chip is illustrated in FIG. )

  The zone represented in FIG. 1 includes a first pair of contact pads 131a and 131b and a second parallel pair of contact pads 131c and 131d. Solder bumps attached to each contact pad through via holes in the carrier 130 support the metal pads, and the contact pad pairs provide input / output terminals for the differential pair of cells. A single contact pad 131e is disposed in the space between the first and second pairs. Contact pad 131e is connected to ground potential to provide electrical shielding between adjacent pairs of contact pads, and hence differential pairs of conductive lines.

  In the example of FIG. 1, the first pair of contact pads 131a and 131b and the second pair 131c and 131d, together with a single contact pad 131e, have a regular pitch 136 of 500 μm between the centers and 2 × Three arrays are formed. On the other hand, as shown in the figure, a place for the “partner” of a single contact pad 131e is required in an array 133 of pads dimensioned as stitch pads, and a suitable space for attaching the bonding wires 120. Has been depopulated to provide.

  The regularity of the stitch pad array 133 can be seen in FIGS. FIG. 3 shows the zone of FIG. 1 in a top view in connection with a chip bond pad, and FIG. 4 highlights the stitch pad and wire bond connections from the chip bond pad to the substrate stitch pad. The contour and area of the stitch pad is selected so that the pad provides a space for attaching a stitch or wedge bond, for example using a capillary, in a wire bonding method (wire diameter of about 20-30 μm). As an example, the stitch pad may have a rectangular shape with a side length of 100 to 150 μm. As shown in FIG. 3, the array of stitch pads fits in the space between the first and second pairs of contact pads (described above). This space is equivalent to the contact pad space being depopulated as shown in the figure. In this example, the zone includes five adjacent contact pads that surround a site where future contact pads are vacated. These five contact pads form a U shape, with the U opening facing away from the bond pad and facing the substrate edge 130a. In other embodiments, the bond pads can be arranged in a mirror image, with the U-shaped opening facing the chip edge 101a. The stitch pad is patterned into an unequal number of two rows. In the example shown in FIG. 3, the longer row has four stitch pads and the shorter row has two stitch pads, which are arranged in a staggered position with respect to the longer row. Is done. A first pair of stitch pads is shown in the drawings as 133a and 133b. Similar staggered positions apply to stitch pads 133c and 133d.

  Adjacent stitch pads in parallel rows are staggered. This is because, by staggering, the attached bonding wires can span between each bond pad and the stitch pad in parallel and close to tight, for example, with a spacing of only 60 μm. is there. The pair of bonding wires for the stitch pads 133a and 133b are indicated by 120a and 120b in FIGS. 1 and 4, respectively. Similarly, a pair of bonding wires for stitch pads 133c and 133d are indicated by 120c and 120d, respectively. In other examples, the spacing may be even larger, such as 150 μm. Due to the staggered position of the stitch pads 133a and 133b relative to each other, the differential pair of respective bonding wires 120a and 120b can be parallel to each other within 5 degrees. Similar correlation is maintained for stitch pads 133c and 133d and their respective bonding wires.

  The stitch pads and contact pads need to be connected by conductive traces, and preferably these traces are manufactured by etching from the same metal layer 131 on the surface of the insulating carrier 130. The width of the trace depends on the aspect ratio with the layer thickness. As an example, the trace may have a width of about 20 μm. FIG. 3 shows a pair of traces connecting each stitch pad and adjacent contact pads. As an example, the trace 132a that connects the stitch pad 133a to the adjacent contact pad 131a and the trace 132b that connects the stitch pad 133b to the adjacent contact pad 131b are substantially parallel and laid out to have the same length. Form a pair. Symmetric to the pair of traces 132a and 132b is the pair of traces 132c and 132d. This pair is substantially parallel to and equal in length to the pair of contact pads 131c and 131d, respectively.

  As shown in FIG. 3, the array of alternating stitch pads has stitch pads 133e and 133f in symmetrical central positions between pairs 133a and 133b and pairs 133c and 133d. In some embodiments, stitch pads 133e and 133f may be combined into a single pad with a larger area than other stitch pads. The stitch pads 133e and 133f are connected to a contact pad 131e that is a ground potential. One or two bonding wires 120e connecting the stitch pads 113e and 133f to the respective bond pads at the chip edge are parallel to and equidistant from the other bonding wires. As a result, the ground potentials of the stitch pads 133e and 133f and the bonding wire 120e are the differential pairs 120a-133a-132a-131a and 120b-133b-132b-131b and the differential pairs 120c-133c-132c-131c and 120d-133d. Helps provide an efficient shield against low crosstalk between conductive lines of -132d-131d. The listed differential pairs are comprised of two substantially parallel, equal length conductor portions that can conduct high frequency signals from package terminals (solder bumps) to chip terminals and vice versa with high integrity. Is possible. As discussed above, considering the cross section through the differential pair, it has a total current that is substantially zero.

  As described above, whether the U-shaped opening of the contact pad array faces the chip edge as shown in FIG. 3 or faces away from the chip edge, the purpose of high integrity signal transmission Can be achieved.

  Referring to FIG. 1, the trace designated 135 leads from the stitch pad to the edge of the substrate. These traces serve the purpose of connecting a patterned metal layer to the plating bar to temporarily hook the chip to the plating bath to deposit additional metal on the traces at a low cost.

  In order to protect the bonding wires and the chip surface, the chip needs to be sealed, preferably with a molding compound. In a preferred example, the molding compound thickness on top of the bonding wire arc can be 300-400 μm.

  The exemplary embodiments described in FIGS. 1, 2, 3, and 4 are based on the conventional requirement to keep the differential signal integrity within 5% of the mismatch budget and within 10% of the differential impedance budget. It shows what can be achieved without using multiple metal layer substrates and associated metal filled via holes. With a single metal layer substrate, the patterned metal layer includes zones that can accommodate alternate types of bond stitch pads. Traces from adjacent stitch pads to each contact pad run almost in parallel. In the three-dimensional cell associated with the zone, the contact pads of the differential pair are placed so that the sum of the bonding wires and traces for the differential pair are of equal length.

  The resulting cell may stay well within the 5% mismatch budget and 10% proximity and parallelism budget, which ensures the signal integrity of the semiconductor package. The required impedance match is about 100Ω for differential impedance. The design requirement causes a ground reference to be performed on each of the signals. The preferred impedance to ground is approximately 50Ω for each of the traces in the differential pair, with each differential pair being composed of a positive going voltage and a negative going voltage when referenced to this ground. The impedance of these voltages relative to this reference ground is preferably about 50Ω for both positive and negative signals.

  The frequency range of the high speed signal device is preferably about 5-10 GHz. At 10 GHz, the wavelength is 30 mm in the air and about 15 mm in the molding compound. At 10 GHz, the impedance match is preferably within 15%, more preferably within 10%. Assuming a 100Ω load, the preferred voltage range for the device is about 800-1000 mV, with a current of about 10 mA per differential pair. For 1000 mV input differential signals, the crosstalk between the differential pairs is preferably kept below 10 mV (or -40 dB at 5 GHz). In the exemplary embodiment described above, the crosstalk has been measured to be about 3 mV.

  The concept of a transmitter / receiver cell with two differential pairs of parallel and symmetrically located conductor lines can be extended to a system, in which the chip contains several such cells that surround the chip. Assembled on a substrate. In the preferred arrangement, four transmitter / receiver cells surround a chip in a cross-sectional arrangement.

  Another exemplary embodiment is shown in FIG. 5 as a quad duplex high speed differential transceiver. Note that for the sake of brevity, FIG. 5 shows a simplified X-ray diagram showing only selected pads, traces, and bonding wires. FIG. 5 shows a top view of a square (or rectangular) semiconductor chip 501 with bond pads 510 near the chip edge. This figure is viewed through the sealing compound in an X-ray fashion. The chip is assembled on a substrate 503 having a metal layer facing the chip. The metal layer includes a patterned array of rows and columns of regularly spaced pads 531 dimensioned as contact pads. Within this array, four transmitter / receiver cells in FIG. 5 are indicated by dashed outlines 540a, 540b, 540c, and 540d, and these cells allow the high frequency signal to conduct with integrity. Designed according to.

  These cells are arranged symmetrically on the four sides of the chip. Each cell is single for ground potential in a second pair (531c, 531d) parallel to the first pair of contact pads (531a, 531b) and in the space between the first and second pairs. Contact pads (531e) and alternating pairs of pads (133) dimensioned as stitch pads. Each stitch pad pair is connected to its respective adjacent contact pad pair by parallel, equal length traces (132a and 132b, 132c and 132d).

  Bonding wires (120a and 120b, 120c and 120d) span arcs of parallel and equal length to connect bond pad pairs to respective pairs of stitch pads. The sum of bond pads, wires, stitch pads, traces, and contact pads form a conductor line, and parallel and equal length pairs of conductor lines form a differential pair from the bond pad to the contact pad. In the differential pair, the length of the conductor line is matched within 5%, and the bonding wire is parallelism within 5%. In this context, the direction of the bonding wire may form an angle that is perpendicular to each chip side, or the direction of the bonding wire forms an angle that is slightly offset from normal to each chip side. May be. Two differential pairs of parallel and symmetrically located conductor lines form a transmitter / receiver cell for conducting high frequency signals with integrity.

  The principles described apply not only to integrated circuits but also to other devices for high speed electrical signals.

  These principles apply to the substrate using other stackups, materials, or methods that substantially achieve the interconnection between the IC chip and the PBC using the techniques described herein. Applies to devices that can be used. For example, a device in which the patterned conductive layer is applied by plating, printing, or etching, or a device in which the insulating layer is made of a cured epoxy material such as a molding compound, or mutual via the insulating layer. This also applies to devices where the connection consists of substantially small vias that are filled with copper, solder, or other conductive material.

  These principles also apply to devices that are sealed by molding compounds and by other protective packages such as metal cans.

  Those skilled in the art will appreciate that variations can be made to the described exemplary embodiments and that many other embodiments are possible within the scope of the claims of the present invention.

Claims (16)

A semiconductor device,
Has a bond pad near the chip edge, the semiconductor chip is assembled on a substrate,
The substrate having a metal layer facing the semiconductor chip, the metal layer being patterned into an array comprising regularly spaced rows and columns dimensioned as contact pads; and the substrate,
A zone in the array, the zone being a single for ground potential in a second pair parallel to the first pair of contact pads and in the space between the first and second pairs; and the contact pad, and a staggered pair of pads which are dimensioned as a stitch pads, each stitch pad pair are connected to respective adjacent contact pad pairs by tracing parallel equal length, said zone,
A bonding wire that spans a parallel, equal length arc for connecting a pair of bond pads to each pair of stitch pads, and thus, of parallel, equal length conductor lines from the bond pad to the contact pad. The bonding wire forming a differential pair; and
Two differential pairs of parallel and symmetrically located conductor lines forming a transmitter / receiver cell; and
Including a semiconductor device. The device of claim 1, comprising:
A semiconductor device further comprising a solder bump attached to a surface of the contact pad remote from the semiconductor chip. The device of claim 2, comprising:
A semiconductor device wherein the sum of the conductors forming one of the conductor lines of one differential pair matches within 5% of the sum of the conductors forming the other conductor line of the pair. The device of claim 3, comprising:
A semiconductor device in which the bonding wires of the two conductor lines forming one differential pair are within 100 μm spacing from each other over their entire length. A device according to claim 4, wherein
A semiconductor device in which the bonding wires of the two conductor lines forming one differential pair are parallel to each other within 5 degrees. The device of claim 5, comprising:
A semiconductor device in which the coupling of the signal between two differential pairs is less than or equal to 1% of the voltage, corresponding to -40 dB at 5 GHz. The device of claim 1, comprising:
A semiconductor device, wherein the substrate has a metal layer facing an external contact pad. The device of claim 1, comprising:
A semiconductor device, wherein the substrate has a pattern created by plating or etching a conductive layer. The device of claim 1, comprising:
A semiconductor device wherein the insulating layer on the substrate is selected from the group comprising polyimide, glass fiber reinforced plastic, or epoxy molding compound. The device of claim 1, comprising:
The semiconductor device wherein the surface of the contact pad remote from the semiconductor chip is solderable and is selected from the group comprising NiPdAu, copper OSP, or tin or a tin-based alloy. A semiconductor device,
Has a bond pad near the chip edge, the semiconductor chip is assembled on a substrate,
The substrate having a metal layer facing the semiconductor chip, the metal layer being patterned into an array including regularly spaced rows and columns dimensioned as contact pads; and the substrate,
Four zones in the array, each zone for a ground potential in a second pair parallel to the first pair of contact pads and in the space between the first and second pairs. A single contact pad and alternating pairs of pads sized as stitch pads, each stitch pad pair being connected to each adjacent contact pad pair by parallel, equal length traces, said zone but symmetrically it is disposed around the periphery of the semiconductor chip provided with a respective one zone in each chip side, and the four zones,
Bonding wires on each side of the chip, spanning parallel, equal length arcs for connecting bond pad pairs to respective pairs of stitch pads, and thus parallel, equal lengths from bond pads to contact pads forming a differential pair of conductor lines of the, and the bonding wire,
Two differential pairs of conductor lines in parallel and symmetrical positions, the two differential pairs forming a transmitter / receiver cell for conducting high frequency signals with integrity, and four cells , and provided with a respective one of the zones are symmetrically disposed around the periphery of the semiconductor chip, the two differential pairs in each chip side,
Including a semiconductor device. The device of claim 11, comprising:
A semiconductor device further comprising a solder bump attached to a surface of the contact pad remote from the semiconductor chip. A device according to claim 12, comprising:
In each cell, a semiconductor device wherein the sum of the conductors forming one of the conductor lines of one differential pair matches within 5% of the sum of the conductors forming the other conductor line of the pair. The device of claim 13, comprising:
In each cell, a semiconductor device in which the bonding wires of the two conductor lines forming one differential pair are within 100 μm spacing from each other over their entire length. 15. A device according to claim 14, wherein
In each cell, a semiconductor device in which the bonding wires of the two conductor lines forming one differential pair are parallel to each other within 5 degrees. The device of claim 15, comprising:
In each cell, a semiconductor device in which the signal coupling between two differential pairs is less than or equal to 1% of the voltage, corresponding to −40 dB at 5 GHz.

Images