JP5943386B2 - Lead frame and manufacturing method thereof - Google Patents

Description

  The present invention relates to a lead frame in which a terminal portion is formed by half-etching applied from the upper surface side of a metal plate, and after a semiconductor element is placed at a predetermined position on the upper surface side, resin sealing is performed from the upper surface side. The present invention relates to a lead frame for forming a semiconductor package by performing half-etching from the lower surface side and a manufacturing method thereof.

  In recent years, semiconductor packages are required to have multiple pins, small size, and thinning. As a semiconductor package that satisfies these requirements, a relatively inexpensive QFN (Quad Flat Non-lead) type package using a lead frame made of a metal material is known.

  As a lead frame of a QFN type package, one having a plurality of conductor terminals formed in an area array around a region where a semiconductor element is placed is known. The upper surface side of the conductor terminal is a bonding part for wire bonding to the electrode of the semiconductor element via a bonding wire, and the lower surface side is an external connection part. In the QFN type package, by using the upper and lower surfaces of the conductor terminals in this manner, the number of pins, the size, and the thickness are reduced.

  As a manufacturing method of such a QFN type package, a metal plate (copper) is subjected to a noble metal plating process, an etching resistant resist film is formed on the lower surface side of the metal plate, and then the upper plating layer is etched. A step of forming a lead frame by half-etching as a mask, and mounting a semiconductor element at a predetermined position on the upper surface side of the lead frame, and a noble metal plating layer (bonding part) formed on the upper surface side of the semiconductor element and the lead frame Wire bonding to the lead frame, resin sealing on the upper surface side of the lead frame, and etching resist film formed on the lower surface side of the lead frame is removed, and etching is performed on the lower surface side using a noble metal plating layer as an etching mask. A manufacturing method is known that undergoes a process of forming an external connection by processing (see Patent Document 1). ).

JP 2007-150372 A

  By the way, the QFN type package is standardized so that the external connection portions are arranged at a predetermined pitch, like other types of packages. For this reason, when the number of pins is increased, the conductor terminals having the external connection portions have to be arranged at positions away from the region where the semiconductor element is placed, and as a result, the manufactured semiconductor package is enlarged. There was a problem that.

  In addition, the conductor terminal of the semiconductor package described in Patent Document 1 has a problem in that it is easily oxidized and corroded because the lower surface side is exposed, and the adhesive force with the sealing resin is weak and easily falls off.

  The present invention has been made in view of such problems of the prior art, and the object of the present invention is to have a conductor terminal that is less susceptible to oxidation and corrosion on the lower surface side and has high adhesion to a sealing resin. A small lead frame and a method for manufacturing the same are provided.

In order to achieve the above object, the lead frame of the present invention has a terminal portion formed by half-etching on the upper surface side of a metal plate, and the upper surface side is sealed with a semiconductor element placed thereon. In a lead frame for forming a semiconductor package having a conductor terminal composed of the terminal portion formed on the lower surface side of the metal plate by half etching, the terminal portion has a substantially columnar bonding having a bonding portion. A first protrusion serving as a part-side terminal, a second protrusion serving as a substantially columnar external connection part-side terminal having an external connection part, and a third protrusion. The projecting portion connects the bonding portion side terminal and the external connection portion side terminal, and has a through-hole penetrating in a substantially horizontal direction at a substantially center in a longitudinal direction of the third projecting portion, The protrusions, the formed semiconductor element when placed on the lower side and a position of the semiconductor device, the horizontal width of the third protrusions, said first projection and said second It is characterized by being narrower than the width of the protruding portion .

The lead frame of the present invention, the lower surface portion of the third said through-hole of the protrusion of is preferably in the state of being the lower side or we dissolve removed.

The lead frame of the present invention, the through hole, the resin sealing, resin is preferable state der Rukoto filling.

In order to achieve the above object, a lead frame manufacturing method according to the present invention includes a first projecting portion serving as a substantially columnar bonding portion side terminal having a bonding portion, and a lower portion of the semiconductor element when the semiconductor element is mounted. A second protrusion serving as a substantially columnar external connection portion side terminal positioned on the side and having a horizontal width smaller than the width of the first protrusion and the second protrusion , when forming a third protruding portion serving as a wiring portion for connecting the bonding portion side terminals and the external connection portion side terminals, the longitudinal direction substantially horizontal third projecting portion serving as a wiring portion A through-hole penetrating in the direction is formed.

  According to the present invention, it is possible to provide a small-sized lead frame having a conductor terminal that is less susceptible to oxidation / corrosion on the lower surface side and has high adhesion to a sealing resin, and a method for manufacturing the same.

6 is a plan view showing a semiconductor package using the lead frame according to Embodiment 1. FIG. It is a schematic sectional drawing which shows the case where the semiconductor package shown in FIG. 1 is cut | disconnected by the AA line. FIG. 2 is a schematic cross-sectional view showing a manufacturing process of the semiconductor package shown in FIG. 6 is a schematic cross-sectional view showing a modification of a semiconductor package using a lead frame according to Example 2. FIG.

  Embodiments of a semiconductor package using the lead frame of the present invention will be described below with reference to the drawings.

  First, a semiconductor package using the lead frame according to the first embodiment will be described with reference to FIGS.

  In the figure, 1 is a conductor terminal, 1a is a bonding part, 1b is an external connection part, 1c is a bonding part side terminal, 1d is an external connection part side terminal, 1e is a wiring part, 1f is a notch (through hole), 2 is a semiconductor element, 3 is a bonding wire, 4 is a sealing resin, 5a and 5a ′ are dry film resists, 5b is a resist mask for plating, 5c is a resist mask for etching, and 6 is a plating layer.

  First, the configuration of a semiconductor package using this lead frame will be described with reference to FIGS.

  As shown in FIGS. 1 and 2, the semiconductor package using this lead frame is formed so that the semiconductor element 2 is placed at the approximate center on the upper surface side as shown by a two-dot chain line. A plurality of conductor terminals 1 are formed in an area array around the area. The electrodes of the semiconductor element 2 are wire-bonded and electrically connected to the corresponding conductor terminals 1 and bonding wires 3. The semiconductor package using the lead frame is formed by mounting the semiconductor element 2 on the lead frame, performing wire bonding, and then sealing with a sealing resin 4.

  The conductor terminal 1 has a bonding portion 1a on the upper surface side and has a bonding portion side terminal 1c formed around a region where the semiconductor element 2 is placed, and an external connection portion 1b on the lower surface side. A wiring portion formed between the external connection portion side terminal 1d formed in the region on which the semiconductor element 2 is placed, and the bonding portion side terminal 1c and the external connection portion side terminal 1d. 1e. The bonding part side terminal 1c and the external connection part side terminal 1d are substantially columnar, and the vertical length of the bonding part side terminal 1c is shorter than the vertical length of the external connection part side terminal 1d. Has been. Moreover, the shape of the wiring part 1e is a substantially plate shape formed so that the horizontal width is narrower than the widths of the bonding part side terminal 1c and the external connection part side terminal 1d.

  Since the conductor terminal 1 has such a shape, this lead frame can effectively utilize the space below the region where the semiconductor element is placed. Therefore, if this lead frame is used, it is possible to reduce the size of the semiconductor package, and thus to reduce the size of the entire device using the semiconductor package.

Further, in this lead frame, the conductor terminal 1 is formed with a notch (through hole) 1f at substantially the center in the longitudinal direction of the wiring portion 1e so as to penetrate the wiring portion 1e in a substantially horizontal direction. The notch (through hole) 1f is filled with the sealing resin 4 when the resin sealing is performed.

  Since such a notch (through hole) 1f is formed, it is possible to prevent the conductor terminal 1 from falling off in a semiconductor package using this lead frame.

  Next, the manufacturing process of the lead frame and the manufacturing process of the semiconductor package using the lead frame will be described with reference to FIG.

  First, as shown in FIG. 3A, a dry film resist 5a is laminated on both surfaces of a metal plate.

  As the metal plate, it is preferable to use a metal plate made of a copper alloy having a plate thickness of 100 μm to 200 μm, such as a metal plate made of a Cu alloy material having a plate thickness of 125 μm. The thickness of the dry film resist 5a is preferably about 15 to 40 μm.

  Next, as shown in FIG. 3B, an exposure process is performed using a glass mask on which a desired pattern is formed, and the upper surface side of the bonding portion side terminal 1c of the conductor terminal 1 and the external connection portion side A plating resist mask 5b is formed in a region other than the region on the lower surface side of the terminal 1d.

  Such a plating resist mask 5b and an etching resist mask 5c described later are generally formed by laminating a negative type dry film resist such as a dry film resist 5a that cures the photosensitive portion. However, it may be formed using a positive type dry film resist, or may be formed by applying a liquid resist.

When performing the exposure process, an exposure mask on which a desired pattern is drawn is brought into close contact, and the resist mask 5a is exposed to the pattern of the exposure mask by irradiating ultraviolet rays. The irradiation amount of the ultraviolet rays at this time is about ²⁰ to 100 mJ / cm ² . In the development, when an alkali development type resist is used, sodium carbonate having a concentration of about 1% is usually used.

  Next, as shown in FIG. 3C, in the region on the upper surface side of the protruding portion that becomes the bonding portion side terminal 1c of the conductor terminal 1, the region on the lower surface side of the protruding portion that becomes the external connection portion side terminal 1d. Plating is performed to form a plating layer 6.

  The material for forming the plating layer 6 may be appropriately selected depending on the wire bonding property and the solder wettability when mounted on the printed board. Usually, Ni, Pd, Au, Ag, etc. are selected by electroplating.

  Next, as shown in FIG. 3D, the plating resist mask 5b is peeled off from both surfaces of the metal plate.

  In the case of using an alkali development type resist mask, sodium hydroxide having a concentration of about 1% is usually used for peeling the resist mask.

  Next, as shown in FIG. 3E, a dry film resist 5a 'is laminated on both surfaces of the metal plate.

  Next, as shown in FIG. 3 (f), an exposure process is performed using a glass mask on which a desired pattern is formed, so that the region where the conductor terminal 1 is formed is covered on the upper surface side of the metal plate. An etching resist mask 5c is formed. Similarly, an etching resist mask 5c is formed so as to cover the entire region on the lower surface side.

  Note that, on the upper surface side, it is preferable to form the etching resist mask 5 c so as to cover the plating layer 6. This is to prevent the plating layer 6 from becoming a burr when a half etching process performed thereafter is performed in consideration of an etching amount and an exposure position shift.

  For example, when the width of the region where the bonding portion side terminal 1c and the external connection portion side terminal 1d are formed is 0.4 mm, and the width of the region where the wiring portion 1e is formed is 0.1 mm, the resist mask for etching is used. 5c is preferably formed in such a size as to cover at least a position about 50 μm away from the end of the plating layer 6.

  Next, as shown in FIG. 3G, half etching is performed from the upper surface side of the metal plate to a predetermined depth to form a terminal portion that becomes the conductor terminal 1 when the semiconductor package is formed. A notch (through hole) 1f is formed in a protruding portion that becomes one wiring portion 1e of the conductor element.

  In addition, as a formation method of this notch (through-hole) 1f, when performing a half etching process, it is said that the etching liquid containing the organic compound containing nitrogen and sulfur which has affinity with copper is used as an etching inhibitor. There is a way.

When half-etching is performed from the upper surface side, when an ordinary etching solution is used, the etching process is sequentially performed from the upper surface side to the lower surface side. Therefore, a notch (through hole) 1f or the like is used. A through hole cannot be formed.
However, when an etching solution containing an etching inhibitor is used, the etching inhibitor is adsorbed on the upper surface side portion of the portion to be left after the etching treatment, so that the etching treatment of that portion is suppressed, so that the width is narrow. A through hole can be formed in a portion, for example, in the vicinity of the approximate center in the longitudinal direction of the protruding portion that becomes the wiring portion 1e.
That is, since both sides of the resist mask for forming the wiring portion 1e are not covered with the resist mask because the upper surface of the metal plate is exposed, the etching proceeds from both sides without the resist mask to the lower side of the resist mask. Etching is suppressed on the side surface of the metal plate in contact with the resist mask on the upper surface side and the vicinity thereof, and the wiring portion 1e is formed by the effect of the etching inhibitor, and a through hole is formed thereunder.
On the other hand, since the width of the bonding portion side terminal 1c and the external connection portion side terminal 1d is wider than the width in the horizontal direction of the wiring portion 1e, the bonding portion side even if etching is performed until a through hole is formed in the wiring portion 1e. No through hole is formed in the terminal 1c and the external connection portion side terminal 1d.

  Specifically, for example, the depth of the half-etching process is set to about 50 μm to 100 μm, and an etching solution containing an azole-based etching inhibitor at a liquid temperature of 40 ° C. is used for 4 minutes at a spray pressure of 0.20 MPa. It is preferable to perform etching and perform half etching from the surface side to a depth of about 80 μm. The wiring portion 1e formed in this manner has a width of about 0.02 mm and a thickness of about 0.015 mm near the center, and a through hole extending from the bottom to a depth of about 80 μm (0.08 mm) of the metal plate. Is formed.

Next, as shown in FIG. 3 (h), peeling off the etching resist mask 5c from the upper surface of the metal plate. Thereby, a lead frame is obtained.

  Next, as shown in FIG. 3I, the semiconductor element 2 having a plurality of electrodes is placed using a die paste or the like (not shown) at a predetermined position on the upper surface side. Each of the electrodes of the semiconductor element 2 and the corresponding bonding portion 1 a of the conductor terminal 1, that is, the plating layer 6 formed on the upper surface side of the terminal portion that becomes the conductor terminal 1, are connected via the bonding wire 3. Bond.

  Note that a silver paste is preferably used as the die paste. Moreover, as a bonding wire, it is preferable to use Au wire, Ag wire, Cu wire, etc., and it is preferable that a wire diameter is about 20-40 micrometers.

  Next, as shown in FIG. 3J, resin sealing is performed from the upper surface side using a sealing resin 4 such as an epoxy resin. At this time, the sealing resin 4 is also filled into the notch (through hole) 1f.

  Next, as shown in FIG. 3K, the etching resist mask 5c is peeled from the lower surface side of the metal plate.

  Finally, as shown in FIG. 3 (l), the lower surface side of the metal plate is etched to form a half of the lower surface side of the conductor terminal 1 to complete the semiconductor package. At this time, the plating layer 6 serves as a resist mask for this etching process.

  Thereafter, the semiconductor package manufactured in this way is cut by a method such as dicing to form individual semiconductor packages.

  At the time of this cutting, since unnecessary portions of the lead frame (metal plate) are removed by etching, only the resin portion is cut. Therefore, this semiconductor package is easier to cut than a semiconductor package that needs to cut the lead frame (metal plate) and the resin at the same time, and the life of the cutting tool used is also increased.

  Next, a semiconductor package using the lead frame according to the second embodiment will be described with reference to FIG. The lead frame of the present embodiment has substantially the same configuration as the lead frame of the first embodiment except for the shape of the conductor terminals when the semiconductor package is manufactured. Therefore, the same members are denoted by the same reference numerals. Detailed description thereof will be omitted. A detailed description of the manufacturing process of the lead frame and the semiconductor package using the lead frame is also omitted.

  In the figure, 1 ′ is a conductor terminal, 1a ′ is a bonding part, 1b ′ is an external connection part, 1c ′ is a bonding part side terminal, 1d ′ is an external connection part side terminal, 1e ′ is a wiring part, and 1f ′ is a wiring part. Through holes, 2 is a semiconductor element, 3 is a bonding wire, and 4 is a resin.

  As shown in FIG. 4, in this lead frame, the vertical length of the substantially columnar bonding portion side terminal 1c ′ and the vertical length of the wiring portion 1e ′ are equal to each other in the vertical direction of the external connection portion side terminal 1d ′. It is almost the same as the length. Further, the through hole 1f 'is formed as an opening substantially at the center of the wiring portion 1e'.

  Since the conductor terminal 1 has such a shape, if this lead frame is used, it is possible to reduce the size of the semiconductor package, and thus the size of the entire apparatus using the semiconductor package. Furthermore, since the bonding portion side terminal 1c 'is long, wire bonding can be performed stably.

  In the above-described embodiment, only one through hole 1f, 1f 'is formed at the approximate center of the protruding portion to be the wiring portions 1e, 1e'. However, the lead frame of the present invention is not limited to such a configuration, and a plurality of through holes may be provided, and the formation location may not be substantially the center of the protruding portion serving as the wiring portion. .

  INDUSTRIAL APPLICABILITY The present invention is extremely useful for reducing the size of a semiconductor package, and thus achieving the size reduction of the entire device using the semiconductor package, and preventing the conductor terminals of the semiconductor package from falling off.

DESCRIPTION OF SYMBOLS 1, 1 'Conductor terminal 1a, 1a' Bonding part 1b, 1b 'External connection part 1c, 1c' Bonding part side terminal 1d, 1d 'External connection part side terminal 1e, 1e' Wiring part 1f, 1f 'Through-hole 2 Semiconductor Element 3 Bonding wire 4 Sealing resin 5a, 5a ′ Dry film resist 5b Plating resist mask 5c Etching resist mask 6 Plating layer

Claims (4)

It has terminal portions formed by half-etching on the upper surface side of the metal plate, the upper surface side is resin-sealed with a semiconductor element mounted thereon, and is formed by half-etching processing on the lower surface side of the metal plate. In a lead frame for forming a semiconductor package having a conductor terminal comprising the terminal portion,
The terminal portion includes a first protrusion serving as a substantially columnar bonding portion side terminal having a bonding portion, a second protrusion serving as a substantially columnar external connection portion side terminal including an external connection portion, and a third protrusion. A protrusion, and
The third projecting portion connects the bonding unit side terminal and the external connection unit side terminal, and has a through-hole penetrating in a substantially horizontal direction at a substantially center in a longitudinal direction of the third projecting portion,
The second protrusion is formed at a position below the semiconductor element when the semiconductor element is placed;
The lead frame according to claim 1, wherein a horizontal width of the third protrusion is smaller than a width of the first protrusion and the second protrusion. The lower surface of the portion of the third said through-hole of the protrusion of the lead frame according to claim 1, characterized in that in the state of being the lower side or we dissolve removed.   The lead frame according to claim 1, wherein the through hole is in a state filled with resin by resin sealing. A first protrusion serving as a substantially columnar bonding portion side terminal having a bonding portion; and a second column serving as a substantially columnar external connection portion side terminal having an external connection portion positioned below the semiconductor element when the semiconductor element is mounted. And the width in the horizontal direction is narrower than the width of the first protrusion and the second protrusion, and becomes a wiring portion that connects the bonding portion side terminal and the external connection portion side terminal. A method for manufacturing a lead frame, characterized in that, when forming the third projecting portion, a through-hole penetrating the longitudinal direction of the third projecting portion serving as the wiring portion in a substantially horizontal direction is formed.

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