JP5814437B2 - Semiconductor device manufacturing method and semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device.

  Semiconductor integrated circuits, in particular, integrated circuits using MOS transistors, are becoming increasingly highly integrated. Along with this high integration, the MOS transistors used therein have been miniaturized to the nano region. As the miniaturization of MOS transistors progresses, there is a problem that it is difficult to suppress the leakage current, and the area occupied by the circuit cannot be easily reduced due to a request for securing a necessary amount of current. In order to solve such a problem, a Surrounding Gate Transistor (SGT) having a structure in which a source, a gate, and a drain are arranged in a vertical direction with respect to a substrate and the gate surrounds a columnar semiconductor layer has been proposed (for example, Patent Documents). 1, Patent Document 2, Patent Document 3).

  By using metal instead of polysilicon for the gate electrode, depletion can be suppressed and the resistance of the gate electrode can be reduced. However, the post-process after forming the metal gate must always be a manufacturing process that considers metal contamination by the metal gate.

  Further, in a conventional MOS transistor, in order to achieve both a metal gate process and a high temperature process, a metal gate last process for creating a metal gate after a high temperature process is used in an actual product (Non-Patent Document 1). After forming a gate with polysilicon, an interlayer insulating film is deposited, then the polysilicon gate is exposed by chemical mechanical polishing, and after etching the polysilicon gate, a metal is deposited. Therefore, also in SGT, in order to make a metal gate process and a high temperature process compatible, it is necessary to use the metal gate last process which produces a metal gate after a high temperature process. In SGT, since the columnar silicon layer is higher than the gate, it is necessary to devise for using the metal gate last process.

  In order to reduce the parasitic capacitance between the gate wiring and the substrate, the conventional MOS transistor uses the first insulating film. For example, in FINFET (Non-patent Document 2), a first insulating film is formed around one fin-like semiconductor layer, the first insulating film is etched back, the fin-like semiconductor layer is exposed, and the gate wiring and the substrate The parasitic capacitance between them is reduced. Therefore, also in SGT, it is necessary to use the first insulating film in order to reduce the parasitic capacitance between the gate wiring and the substrate. In SGT, since there is a columnar semiconductor layer in addition to the fin-shaped semiconductor layer, a device for forming the columnar semiconductor layer is required.

  On the other hand, a FINFET that forms two transistors from one dummy pattern is known (for example, Patent Document 4). Side walls are formed around the dummy pattern, and the substrate is etched using the side walls as a mask to form fins, thereby forming two transistors from one dummy pattern.

  Since there are two transistors, one can be an nMOS transistor and one can be a pMOS transistor.

JP-A-2-71556 Japanese Patent Laid-Open No. 2-188966 Japanese Patent Laid-Open No. 3-145761 JP 2011-71235 A

IEDM2007 K. Mistry et.al, pp 247-250 IEDM2010 CC.Wu, et.al, 27.1.1-27.1.4.

  Therefore, a parasitic capacitance between a gate wiring and a substrate is reduced, and a CMOS SGT manufacturing method for forming an nMOS SGT and a pMOS SGT from one dummy pattern and a structure of the resulting SGT is a gate last process. With the goal.

  In the method of manufacturing a semiconductor device according to the present invention, a first fin-like silicon layer and a second fin-like silicon layer are formed on a substrate, and the first fin-like silicon layer and the second fin-like silicon layer are respectively formed on the substrate. Are connected to each other to form a closed loop, a first insulating film is formed around the first fin-like silicon layer and the second fin-like silicon layer, and an upper portion of the first fin-like silicon layer is formed. Forming a first columnar silicon layer on top of the second fin-shaped silicon layer, and forming a second columnar silicon layer on the second fin-shaped silicon layer; And the diameter of the second pillar-shaped silicon layer is the same as the width of the second fin-shaped silicon layer, and after the first step, the first Columnar silicon layer and the first fin-like silicon Impurities are implanted into the upper portion and the lower portion of the first columnar silicon layer to form an n-type diffusion layer, and the upper portion of the second columnar silicon layer, the upper portion of the second fin-like silicon layer, and the lower portion of the second columnar silicon layer. A second step of implanting impurities into the substrate and forming a p-type diffusion layer; and after the second step, a gate insulating film, a first polysilicon gate electrode, a second polysilicon gate electrode, and a polysilicon gate wiring And the gate insulating film covers the periphery and top of the first columnar silicon layer and the second columnar silicon layer, and the first polysilicon gate electrode and the second polysilicon layer are formed. The silicon gate electrode covers the gate insulating film, and the upper surface of the polysilicon after forming the first polysilicon gate electrode, the second polysilicon gate electrode, and the polysilicon gate wiring is the first polysilicon gate electrode. A position higher than the gate insulating film on the n-type diffusion layer above the n-type silicon layer and the gate insulating film on the p-type diffusion layer above the second columnar silicon layer, After the step, a fourth step of forming silicide on the n-type diffusion layer above the first fin-like silicon layer and on the p-type diffusion layer above the second fin-like silicon layer; After the fourth step, an interlayer insulating film is deposited, the first polysilicon gate electrode, the second polysilicon gate electrode, and the polysilicon gate wiring are exposed, and the first polysilicon gate electrode and A fifth step of forming a first metal gate electrode, a second metal gate electrode, and a metal gate wiring by depositing a metal after etching the second polysilicon gate electrode and the polysilicon gate wiring; Previous A metal gate wiring extending in a direction orthogonal to the first fin-like silicon layer and the second fin-like silicon layer connected to the first metal gate electrode and the second metal gate electrode, After the fifth step, the sixth step of forming the first contact and the second contact is directly connected to the n-type diffusion layer on the first columnar silicon layer and the first contact. The p-type diffusion layer on the second columnar silicon layer and the second contact are directly connected to each other.

  In the first step, a second oxide film is deposited on the substrate to form a dummy pattern, a first resist for forming the dummy pattern is formed, and the second oxidation film is formed. The film is etched to form a dummy pattern, the first resist is removed, a first nitride film is deposited, the first nitride film is etched and left in a sidewall shape, and the dummy pattern A first nitride film sidewall is formed around the dummy pattern, the dummy pattern is removed, the silicon substrate is etched using the first nitride film sidewall as a mask, and connected at each end to form a closed loop. Forming a first fin-like silicon layer and a second fin-like silicon layer; forming a first insulating film around the first fin-like silicon layer and the second fin-like silicon layer; Nitride film sidewalls are removed, the first insulating film is etched back, and an upper portion of the first fin-like silicon layer and an upper portion of the second fin-like silicon layer are exposed, and the first fin Forming a second resist so as to be orthogonal to the silicon-like layer and the second fin-like silicon; etching the first fin-like silicon layer and the second fin-like silicon layer; and By removing the resist, the first columnar silicon layer is formed so that a portion where the first fin-shaped silicon layer and the second resist are orthogonal to each other becomes the first columnar silicon layer, and the second columnar silicon layer is formed. The second columnar silicon layer is formed so that a portion where the fin-shaped silicon layer and the second resist are orthogonal to each other becomes the second columnar silicon layer.

  Further, after the first step, a second oxide film is deposited on the entire structure after the first step, and a second nitride film is formed on the entire structure after the first step. The nitride film is etched and left in a sidewall shape, a third resist for forming an n-type diffusion layer is formed, an impurity is implanted, the upper portion of the first columnar silicon layer, and the first fin shape An n-type diffusion layer is formed on the silicon layer, the third resist is removed, the second nitride film and the third oxide film are removed, heat treatment is performed, and a fourth oxide film is deposited. , Forming a third nitride film, etching the third nitride film, leaving it in a sidewall shape, forming a fourth resist for forming a p-type diffusion layer, implanting impurities, A p-type diffusion layer is formed on the top of the two columnar silicon layers and the second fin-like silicon layer, and the fourth The resist is removed, removing the third oxide film and the fourth nitride film, and carrying out heat treatment.

  Further, after the second step, in the third step, a gate insulating film is formed so as to surround the columnar silicon layer, polysilicon is deposited, and the upper surface of the polysilicon after planarization is Flattening so as to be higher than the gate insulating film above the n-type diffusion layer above the first columnar silicon layer and higher than the gate insulating film above the p-type diffusion layer above the second columnar silicon layer. And depositing a fourth nitride film, forming a fifth resist for forming the first polysilicon gate electrode, the second polysilicon gate electrode and the polysilicon gate wiring, and the fourth nitride Etching the film, etching the polysilicon, forming the first polysilicon gate electrode, the second polysilicon gate electrode, and the polysilicon gate wiring, and etching the gate insulating film Grayed, and removing the fifth resist.

  Further, in the fourth step, a fifth nitride film is deposited on the entire structure after the third step, the fifth nitride film is etched and left in a sidewall shape, , And silicide is formed on the n-type diffusion layer and the p-type diffusion layer above the first fin-like silicon layer and the second fin-like silicon layer.

  Further, in the fifth step, a sixth nitride film is deposited on the entire structure after the fourth step, an interlayer insulating film is deposited, planarized by chemical mechanical polishing, and then by chemical mechanical polishing. The first polysilicon gate electrode, the second polysilicon gate electrode, and the polysilicon gate wiring are exposed, and the first polysilicon gate electrode, the second polysilicon gate electrode, and the polysilicon gate wiring are etched. And depositing a metal, embedding the metal in a portion where the first polysilicon gate electrode, the second polysilicon gate electrode and the polysilicon gate wiring were present, etching the metal, and forming a first columnar silicon Exposing the gate insulating film on the n-type diffusion layer above the layer and the gate insulating film on the p-type diffusion layer above the second columnar silicon layer, and a first metal gate electrode; 2 of the metal gate electrode, and forming a metal gate wiring.

  The semiconductor device of the present invention includes a first fin-like silicon layer formed on a substrate, a second fin-like silicon layer formed on the substrate, the first fin-like silicon layer, and the first The two fin-like silicon layers are connected at their ends to form a closed loop, and a first insulating film formed around the first fin-like silicon layer and the second fin-like silicon layer; , A first columnar silicon layer formed on the first fin-shaped silicon layer, a second columnar silicon layer formed on the second fin-shaped silicon layer, and the first columnar silicon layer The diameter of the second fin-shaped silicon layer is the same as the width of the first fin-shaped silicon layer, and the diameter of the second pillar-shaped silicon layer is the same as the width of the second fin-shaped silicon layer. Top of the silicon layer and the first columnar silicon An n-type diffusion layer formed below the first columnar silicon layer, an n-type diffusion layer formed above the first columnar silicon layer, an upper portion of the second fin-shaped silicon layer, and the second columnar silicon layer. A p-type diffusion layer formed in a lower portion; a p-type diffusion layer formed in an upper portion of the second columnar silicon layer; an upper portion of the first fin-shaped silicon layer; and a second fin-shaped silicon layer. Silicide formed above the upper n-type diffusion layer and p-type diffusion layer, a gate insulating film formed around the first columnar silicon layer, and a first formed around the gate insulating film A metal gate electrode, a gate insulating film formed around the second columnar silicon layer, a second metal gate electrode formed around the gate insulating film, and the first metal gate electrode The first connected to the second metal gate electrode A fin-like silicon layer, a metal gate wiring extending in a direction orthogonal to the second fin-like silicon layer, and a first n-type diffusion layer formed on the first columnar silicon layer; And an n-type diffusion layer formed on the first columnar silicon layer, the second contact formed on the p-type diffusion layer formed on the second columnar silicon layer. And the first contact are directly connected, and the n-type diffusion layer formed on the second columnar silicon layer and the second contact are directly connected.

  According to the present invention, a parasitic capacitance between a gate wiring and a substrate is reduced, and is a gate last process, and an nMOS SGT and a pMOS SGT are formed from one dummy pattern. A method for manufacturing a CMOS SGT and a structure of the resulting SGT Can be provided. Based on the conventional method of manufacturing a FINFET in which a sidewall is formed around a dummy pattern, the substrate is etched using the sidewall as a mask, fins are formed, and two transistors are formed from one dummy pattern. Two SGTs can be easily formed from one dummy pattern.

  Since there are two SGTs, one is an nMOS SGT and one is a pMOS SGT, so that one CMOS SGT can be created from one dummy pattern, so that a highly integrated CMOS SGT can be provided.

  In addition, conventionally, silicide is formed on the top of the columnar silicon layer. However, since the deposition temperature of polysilicon is higher than the temperature for forming silicide, the silicide must be formed after forming the polysilicon gate. If silicide is to be formed on the top of the pillar, after forming the polysilicon gate, a hole is formed in the upper portion of the polysilicon gate electrode, a sidewall of the insulating film is formed on the sidewall of the hole, silicide is then formed, and the hole is formed. Since there was a disadvantage of increasing the number of manufacturing steps to fill the insulating film, a diffusion layer was formed before forming the polysilicon gate electrode and polysilicon gate wiring, the columnar silicon layer was covered with the polysilicon gate electrode, and the silicide was finned By forming only on top of the silicon layer, the gate is made with polysilicon, and then the interlayer After depositing the edge film, the polysilicon gate is exposed by chemical mechanical polishing, and after the polysilicon gate is etched, the metal gate can be used for the conventional metal gate last manufacturing method, so that the metal gate CMOS SGT can be easily formed. Can be formed.

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  Below, the manufacturing process for forming the structure of SGT which concerns on embodiment of this invention is demonstrated with reference to FIGS.

  Forming a first fin-like silicon layer and a second fin-like silicon layer on a substrate; forming a first insulating film around the first fin-like silicon layer and the second fin-like silicon layer; A manufacturing method of forming a first columnar silicon layer on the first fin-shaped silicon layer and forming a second columnar silicon layer on the second fin-shaped silicon layer will be described.

  As shown in FIG. 2, a second oxide film 102 is deposited on the silicon substrate 101 to form a dummy pattern. A nitride film or a laminated film of an oxide film and polysilicon may be used.

  As shown in FIG. 3, a first resist 103 for forming a dummy pattern is formed.

  As shown in FIG. 4, the second oxide film 102 is etched to form a dummy pattern 102.

  As shown in FIG. 5, the first resist 103 is removed.

  As shown in FIG. 6, a first nitride film 104 is deposited.

  As shown in FIG. 7, the first nitride film 104 is etched and left in a sidewall shape. A first nitride film sidewall 104 was formed around the dummy pattern 102. The first fin-like silicon layer 106 and the second fin-like silicon layer 105, which are connected at their ends and have a closed loop, are etched by etching the silicon using the formed first nitride film sidewall 104. Will be formed.

  As shown in FIG. 8, the dummy pattern 102 is removed.

  As shown in FIG. 9, the silicon substrate 101 is etched using the first nitride film sidewall 104 as a mask, and the first fin-like silicon layer 106 and the second fin-like shape, which are connected at their ends to form a closed loop, are formed. A silicon layer 105 is formed.

  As shown in FIG. 10, a first insulating film 107 is formed around the first fin-like silicon layer 106 and the second fin-like silicon layer 105. An oxide film formed by high-density plasma or an oxide film formed by low-pressure chemical vapor deposition may be used as the first insulating film.

  As shown in FIG. 11, the 1st nitride film side wall 104 is removed. If the first nitride film sidewall 104 is removed during silicon etching or oxide film deposition, this step is unnecessary.

  As shown in FIG. 12, the first insulating film 107 is etched back to expose the upper portion of the first fin-like silicon layer 106 and the upper portion of the second fin-like silicon layer 105.

  As shown in FIG. 13, a second resist 108 is formed so as to be orthogonal to the first fin-like silicon layer 106 and the second fin-like silicon 105. A portion where the first fin-like silicon layer 106, the second fin-like silicon layer 105, and the resist 108 are orthogonal to each other is a portion that becomes a columnar silicon layer. Since a line-shaped resist can be used, the possibility that the resist falls after patterning is low, and the process is stable.

  As shown in FIG. 14, the first fin-like silicon layer 106 and the second fin-like silicon layer 105 are etched. A portion where the first fin-like silicon layer 106 and the second resist 108 are orthogonal to each other becomes the first columnar silicon layer 110. A portion where the second fin-shaped silicon layer 105 and the second resist 108 are orthogonal to each other becomes a second columnar silicon layer 109. Therefore, the diameter of the first columnar silicon layer 110 is the same as the width of the first fin-shaped silicon layer 106. The diameter of the second columnar silicon layer 109 is the same as the width of the second fin-shaped silicon layer 105.

  A first columnar silicon layer 110 is formed on the first fin-shaped silicon layer 106, a second columnar silicon layer 109 is formed on the second fin-shaped silicon layer 105, and the first fin-shaped silicon layer is formed. The first insulating film 107 is formed around the layer 106 and the second fin-shaped silicon layer 105.

  As shown in FIG. 15, the second resist 108 is removed.

  Next, an impurity is implanted into the upper portion of the first columnar silicon layer 110, the upper portion of the first fin-like silicon layer 106, and the lower portion of the first columnar silicon layer 110 to form an n-type diffusion layer in order to obtain a gate last. A manufacturing method for forming a p-type diffusion layer by implanting impurities into the upper part of the second columnar silicon layer 109, the upper part of the second fin-like silicon layer 105, and the lower part of the second columnar silicon layer 109 will be described.

  As shown in FIG. 16, the 3rd oxide film 111 is deposited and the 2nd nitride film 112 is formed. Later, since the upper part of the columnar silicon layer is covered with the gate insulating film and the polysilicon gate electrode, a diffusion layer is formed on the upper part of the columnar silicon layer before being covered.

  As shown in FIG. 17, the second nitride film 112 is etched and left in a sidewall shape.

  As shown in FIG. 18, an impurity is implanted into the upper part of the first columnar silicon layer 110, the upper part of the first fin-like silicon layer 106, and the lower part of the first columnar silicon layer 110 to form an n-type diffusion layer. 3 resist 113 is formed.

  As shown in FIG. 19, impurities such as arsenic and phosphorus are implanted to form an n-type diffusion layer 115 on the first columnar silicon layer 110 and n-type diffusion layers 116 and 117 on the first fin-like silicon layer 106. .

  As shown in FIG. 20, the third resist 113 is removed.

  As shown in FIG. 21, the second nitride film 112 and the third oxide film 111 are removed.

  Heat treatment is performed as shown in FIG. The n-type diffusion layers 116 and 117 on the first fin-like silicon layer 106 come into contact with each other to become an n-type diffusion layer 118.

  As shown in FIG. 23, the 4th oxide film 119 is deposited and the 3rd nitride film 120 is formed. Later, since the upper part of the columnar silicon layer is covered with the gate insulating film and the polysilicon gate electrode, a diffusion layer is formed on the upper part of the columnar silicon layer before being covered.

  As shown in FIG. 24, the third nitride film 120 is etched to remain in a sidewall shape.

  As shown in FIG. 25, in order to form a p-type diffusion layer by implanting impurities into the upper part of the second columnar silicon layer 109, the upper part of the second fin-like silicon layer 105, and the lower part of the second columnar silicon layer 109, 4 resists 121 are formed.

  As shown in FIG. 26, an impurity such as boron is implanted to form a p-type diffusion layer 122 on the second columnar silicon layer 109 and p-type diffusion layers 123 and 124 on the second fin-like silicon layer 105.

  As shown in FIG. 27, the 4th resist 121 is removed.

  As shown in FIG. 28, the third nitride film 120 and the fourth oxide film 119 are removed.

  Heat treatment is performed as shown in FIG. The p-type diffusion layers 123 and 124 on the second fin-like silicon layer 105 are in contact with each other to become a p-type diffusion layer 125.

  Thus, in order to obtain gate last, impurities are implanted into the upper part of the first columnar silicon layer 110, the upper part of the first fin-like silicon layer 106, and the lower part of the first columnar silicon layer 110 to form n-type diffusion layers 115 and 118. Then, impurities are implanted into the upper part of the second columnar silicon layer 109, the upper part of the second fin-like silicon layer 105, and the lower part of the second columnar silicon layer 109 to form p-type diffusion layers 122 and 125.

  From the above, since one can be an nMOS SGT and one can be a pMOS SGT, one CMOS SGT can be created from one dummy pattern.

  Further, when the line width of the dummy pattern is the minimum processing size F, since the minimum processing size F is between the first columnar silicon layer 110 and the second columnar silicon layer 109, alignment of the resist mask for introducing impurities is performed. The margin can be F / 2, and the pMOS and nMOS can be easily separated.

  Next, a manufacturing method for forming the first polysilicon gate electrode 127a, the second polysilicon gate electrode 127b, and the polysilicon gate wiring 127c from polysilicon in order to obtain gate last will be described. Since the polysilicon gate electrode and the polysilicon gate wiring are exposed by chemical mechanical polishing after depositing an interlayer insulating film for gate last, it is necessary to prevent the upper portion of the columnar silicon layer from being exposed by chemical mechanical polishing. .

  As shown in FIG. 30, a gate insulating film 126 is formed, and polysilicon 127 is deposited and planarized. The upper surface of the polysilicon 127 after planarization is higher than the gate insulating film 126 on the n-type diffusion layer 115 above the first columnar silicon layer 110 and the p-type diffusion layer 122 above the second columnar silicon layer 109. The position is higher than that of the upper gate insulating film 126. As a result, when the polysilicon gate electrode and the polysilicon gate wiring are exposed by chemical mechanical polishing after depositing an interlayer insulating film to form gate last, the upper part of the columnar silicon layer is not exposed by chemical mechanical polishing.

  A fourth nitride film 128 is deposited. When the silicide is formed on the first fin-like silicon layer 106 and the second fin-like silicon layer 105, the fourth nitride film 128 has the first polysilicon gate electrode 127a and the second polysilicon gate. It is a film that inhibits the formation of silicide on the electrode 127b and the polysilicon gate wiring 127c.

  As shown in FIG. 31, the 5th resist 129 for forming the 1st polysilicon gate electrode 127a, the 2nd polysilicon gate electrode 127b, and the polysilicon gate wiring 127c is formed. It is desirable that a portion serving as a gate wiring be orthogonal to the first fin-shaped silicon layer 106 and the second fin-shaped silicon layer 105. This is because the parasitic capacitance between the gate wiring and the substrate is reduced.

  As shown in FIG. 32, the fourth nitride film 128 is etched, the polysilicon 127 is etched, and a first polysilicon gate electrode 127a, a second polysilicon gate electrode 127b, and a polysilicon gate wiring 127c are formed. .

  As shown in FIG. 33, the gate insulating film 126 is etched.

As shown in FIG. 34, the 5th resist 129 is removed.
In order to obtain the gate last as described above, a manufacturing method in which the first polysilicon gate electrode 127a, the second polysilicon gate electrode 127b, and the polysilicon gate wiring 127c are formed of polysilicon is shown. The upper surface of the polysilicon after the formation of the first polysilicon gate electrode 127a, the second polysilicon gate electrode 127b, and the polysilicon gate wiring 127c is the gate above the n-type diffusion layer 115 above the first columnar silicon layer 110. It is higher than the insulating film 126 and higher than the gate insulating film 126 on the p-type diffusion layer 122 above the second columnar silicon layer 109.

  Next, a manufacturing method for forming silicide on the n-type diffusion layer 118 above the first fin-like silicon layer 106 and the p-type diffusion layer 125 above the second fin-like silicon layer 105 will be described.

  The first polysilicon gate electrode 127a, the second polysilicon gate 127b, the polysilicon gate wiring 127c, the n-type diffusion layer 115 above the first columnar silicon layer 110, and the p-type above the second columnar silicon layer 109. The diffusion layer 122 is characterized in that no silicide is formed. If silicide is formed on the n-type diffusion layer 115 above the first columnar silicon layer 110 and the p-type diffusion layer 122 above the second columnar silicon layer 109, the number of manufacturing steps increases.

  As shown in FIG. 35, the 5th nitride film 130 is deposited.

  As shown in FIG. 36, the fifth nitride film 130 is etched and left in a sidewall shape.

  As shown in FIG. 37, a metal such as nickel or cobalt is deposited, and silicide 131 is converted into an n-type diffusion layer 118 and a p-type diffusion layer 125 above the first fin-like silicon layer 106 and the second fin-like silicon layer 105. Form on top of. At this time, the first polysilicon gate electrode 127a, the second polysilicon gate electrode 127b, and the polysilicon gate wiring 127c are covered with the fifth nitride film 130 and the fourth nitride film 128, and the first columnar silicon is formed. The n-type diffusion layer 115 on the layer 110 and the p-type diffusion layer 122 on the second columnar silicon layer 109 include a gate insulating film 126, a first polysilicon gate electrode 127a, a second polysilicon gate electrode 127b, and Since it is covered with the polysilicon gate wiring 127c, no silicide is formed.

  The manufacturing method for forming silicide on the n-type diffusion layer 118 above the first fin-like silicon layer 106 and the p-type diffusion layer 125 above the second fin-like silicon layer 105 is described above.

  Next, an interlayer insulating film 133 is deposited, the first polysilicon gate electrode 127a, the second polysilicon gate electrode 127b, and the polysilicon gate wiring 127c are exposed, and the first polysilicon gate electrode 127a and the second polysilicon gate electrode 127c are exposed. A gate last manufacturing method of forming a first metal gate electrode 134a, a second metal gate electrode 134b, and a metal gate wiring 134c by depositing a metal 134 after etching the polysilicon gate electrode 127b and the polysilicon gate wiring 127c. Indicates.

  As shown in FIG. 38, a sixth nitride film 132 is deposited to protect the silicide 131.

  As shown in FIG. 39, an interlayer insulating film 133 is deposited and planarized by chemical mechanical polishing.

  As shown in FIG. 40, the first polysilicon gate electrode 127a, the second polysilicon gate electrode 127b, and the polysilicon gate wiring 127c are exposed by chemical mechanical polishing.

  As shown in FIG. 41, the 1st polysilicon gate electrode 127a, the 2nd polysilicon gate electrode 127b, and the polysilicon gate wiring 127c are etched. Wet etching is desirable.

  As shown in FIG. 42, a metal 134 is deposited and planarized, and the metal 134 is buried in the portion where the first polysilicon gate electrode 127a, the second polysilicon gate electrode 127b, and the polysilicon gate wiring 127c are present. It is preferred to use atomic layer deposition.

  As shown in FIG. 43, the metal 134 is etched, and the gate insulating film 126 on the n-type diffusion layer 115 above the first columnar silicon layer 110 and the p-type diffusion layer 122 above the second columnar silicon layer 109 are etched. The gate insulating film 126 is exposed. A first metal gate electrode 134a, a second metal gate electrode 134b, and a metal gate wiring 134c are formed.

  An interlayer insulating film 133 is deposited, the first polysilicon gate electrode 127a, the second polysilicon gate electrode 127b, and the polysilicon gate wiring 127c are exposed, and the first polysilicon gate electrode 127a and the second polysilicon gate are exposed. A method of manufacturing a gate last is shown in which a metal 134 is deposited after etching the electrode 127b and the polysilicon gate wiring 127c to form a first metal gate electrode 134a, a second metal gate electrode 134b, and a metal gate wiring 134c. It was.

  Next, a manufacturing method for forming contacts will be described. Since silicide is not formed in the n-type diffusion layer 115 above the first columnar silicon layer 110 and the p-type diffusion layer 122 above the second columnar silicon layer 109, the first contact and the upper portion of the first columnar silicon layer 110 are not formed. The n-type diffusion layer 115 is directly connected, and the second contact and the p-type diffusion layer 122 on the second columnar silicon layer 109 are directly connected.

  As shown in FIG. 44, an interlayer insulating film 135 is deposited and planarized.

  As shown in FIG. 45, a sixth resist for forming a first contact hole 138 above the first columnar silicon layer 110 and forming a second contact hole 137 above the second columnar silicon layer 109 is formed. 136 is formed. Then, the interlayer insulating film 135 is etched to form a first contact hole 138 and a second contact hole 137.

  As shown in FIG. 46, the sixth resist 136 is removed.

  As shown in FIG. 47, a third contact hole 140 and a fourth contact hole 141 are formed on the metal gate wiring 134c and on the first fin-like silicon layer 106 and the second fin-like silicon layer 105. A seventh resist 139 is formed.

  As shown in FIG. 48, the interlayer insulating films 135 and 133 are etched to form the third contact hole 140 and the fourth contact hole 141.

  As shown in FIG. 49, the seventh resist 139 is removed, the sixth nitride film 132 and the gate insulating film 126 are etched, and the silicide 131, the n-type diffusion layer 115, and the p-type diffusion layer 122 are exposed, Metal is deposited to form a first contact 144, a second contact 143, a third contact 142, and a fourth contact 145.

  Thus, a manufacturing method for forming a contact has been shown. Since silicide is not formed in the n-type diffusion layer 115 above the first columnar silicon layer 110 and the p-type diffusion layer 122 above the second columnar silicon layer 109, the first contact and the upper portion of the first columnar silicon layer 110 are not formed. The n-type diffusion layer 115 is directly connected, and the second contact and the p-type diffusion layer 122 on the second columnar silicon layer 109 are directly connected.

  Next, a manufacturing method for forming the metal wiring layer will be described.

  As shown in FIG. 50, metal 146 is deposited.

  As shown in FIG. 51, eighth resists 147, 148, 149, 150 for forming metal wirings are formed, the metal 146 is etched, and metal wirings 151, 152, 153, 154 are formed.

As shown in FIG. 52, the eighth resists 147, 148, 149, 150 are removed.
Thus, a manufacturing method for forming a metal wiring layer has been shown.

  The result of the manufacturing method is shown in FIG.

  A first fin-like silicon layer 106 formed on the substrate 101, a second fin-like silicon layer 105 formed on the substrate 101, the first fin-like silicon layer 106 and the second fin-like silicon layer The layers 105 are connected at respective ends to form a closed loop, and the first insulating film 107 formed around the first fin-like silicon layer 106 and the second fin-like silicon layer 105, and the first Of the first columnar silicon layer 110 formed on the fin-shaped silicon layer 106, the second columnar silicon layer 109 formed on the second fin-shaped silicon layer 105, and the first columnar silicon layer 110. The diameter is the same as the width of the first fin-shaped silicon layer 106, the diameter of the second columnar silicon layer 109 is the same as the width of the second fin-shaped silicon layer 105, and the first fin-shaped silicon layer 106 is the same. An n-type diffusion layer 118 formed on the upper portion of the n-type layer 106 and a lower portion of the first columnar silicon layer 110, an n-type diffusion layer 115 formed on the upper portion of the first columnar silicon layer 110, and a second fin A p-type diffusion layer 125 formed above the second silicon layer layer 105 and a second columnar silicon layer 109; a p-type diffusion layer 122 formed above the second columnar silicon layer 109; A silicide 131 formed on the n-type diffusion layer 118 and the p-type diffusion layer 125 above the fin-like silicon layer 106 and the second fin-like silicon layer 105, and around the first columnar silicon layer 110. The formed gate insulating film 126, the first metal gate electrode 134 a formed around the gate insulating film 126, the gate insulating film 126 formed around the second columnar silicon layer 109, and the gate The second metal gate electrode 134b formed around the insulating film 126, the first fin-like silicon layer 106 connected to the first metal gate electrode 134a and the second metal gate electrode 134b, and the second fin A metal gate wiring 134c extending in a direction perpendicular to the silicon layer 105, a first contact 144 formed on the n-type diffusion layer 115 formed on the first columnar silicon layer 110, and a second A second contact 143 formed on the p-type diffusion layer 122 formed on the columnar silicon layer 109, and an n-type diffusion layer 115 formed on the first columnar silicon layer 110 and the first contact The contact 144 is directly connected, and the p-type diffusion layer 122 formed on the second columnar silicon layer 109 and the second contact 143 are directly connected.

  As described above, a parasitic capacitance between the gate wiring and the substrate is reduced, a gate last process, and an nMOS SGT and a pMOS SGT are formed from a single dummy pattern, and a CMOS SGT manufacturing method and the resulting SGT structure are provided. sell.

  It should be noted that the present invention can be variously modified and modified without departing from the broad spirit and scope of the present invention. Further, the above-described embodiment is for explaining an example of the present invention, and does not limit the scope of the present invention.

  In addition, in the above, it is obvious to those skilled in the art that the p-type (including p + type) and n-type (including n + type) are each of the opposite conductivity type is also included in the technical scope of the present invention. is there.

101. Silicon substrate 102. Second oxide film, dummy pattern 103. First resist 104. First nitride film, first nitride film sidewall 105. Second fin-like silicon layer 106. First fin-like silicon layer 107. First insulating film 108. Second resist 109. Second columnar silicon layer 110. First columnar silicon layer 111. Third oxide film 112. Second nitride film 113. Third resist 115. n-type diffusion layer 116. n-type diffusion layer 117. n-type diffusion layer 118. n-type diffusion layer 119. Fourth oxide film 120. Third nitride film 121. Fourth resist 122. p-type diffusion layer 123. p-type diffusion layer 124. p-type diffusion layer 125. p-type diffusion layer 126. Gate insulating film 127. Polysilicon 127a. First polysilicon gate electrode 127b. Second polysilicon gate electrode 127c. Polysilicon gate wiring 128. Fourth nitride film 129. Fifth resist 130. Fifth nitride film 131. Silicide 132. Sixth nitride film 133. Interlayer insulating film 134. Metal 134a. First metal gate electrode 134b. Second metal gate electrode 134c. Metal gate wiring 135. Interlayer insulating film 136. Sixth resist 137. Second contact hole 138. First contact hole 139. Seventh resist 140. Third contact hole 141. Fourth contact hole 142. Third contact 143. Second contact 144. First contact 145. Fourth contact 146. Metal 147. Eighth resist 148. Eighth resist 149. Eighth resist 150. Eighth resist 151. Metal wiring 152. Metal wiring 153. Metal wiring 154. Metal wiring

Claims (7)

A first fin-like silicon layer and a second fin-like silicon layer are formed on a substrate using a sidewall formed around the dummy pattern, and the first fin-like silicon layer and the second fin-like silicon layer are formed. A first insulating film is formed around the layer, a first columnar silicon layer is formed on the first fin-shaped silicon layer, and a second columnar silicon is formed on the second fin-shaped silicon layer. A first step of forming a layer;
After the first step, an n-type diffusion layer is formed by implanting impurities into the upper part of the first columnar silicon layer, the upper part of the first fin-like silicon layer, and the lower part of the first columnar silicon layer, A second step of forming a p-type diffusion layer by implanting impurities into the upper portion of the two columnar silicon layers, the upper portion of the second fin-shaped silicon layer, and the lower portion of the second columnar silicon layer;
After the second step, a third step of creating a gate insulating film, a first polysilicon gate electrode, a second polysilicon gate electrode, and a polysilicon gate wiring, wherein the gate insulating film is the The first columnar silicon layer and the second columnar silicon layer are covered with a periphery and an upper portion, the first polysilicon gate electrode and the second polysilicon gate electrode cover a gate insulating film, and the first polysilicon layer The upper surface of the polysilicon after forming the silicon gate electrode, the second polysilicon gate electrode and the polysilicon gate wiring is formed on the n-type diffusion layer above the first columnar silicon layer and the gate insulating film. A position higher than the gate insulating film on the p-type diffusion layer above the second columnar silicon layer;
After the third step, silicide is formed on the n-type diffusion layer above the first fin-like silicon layer and on the p-type diffusion layer above the second fin-like silicon layer. Process,
After the fourth step, an interlayer insulating film is deposited, the first polysilicon gate electrode, the second polysilicon gate electrode, and the polysilicon gate wiring are exposed, and the first polysilicon gate electrode is exposed. And a fifth step of forming a first metal gate electrode, a second metal gate electrode, and a metal gate wiring by depositing a metal after etching the second polysilicon gate electrode and the polysilicon gate wiring. Here, the metal gate line is connected to the first metal gate electrode and the second metal gate electrode, and the metal gate line includes the first fin-like silicon layer and the second fin-like silicon layer. A sixth step of forming a first contact and a second contact after the fifth step, wherein the first columnar silicon The n-type diffusion layer above the layer and the first contact are directly connected, and the p-type diffusion layer above the second columnar silicon layer and the second contact are directly connected;
A method for manufacturing a semiconductor device, comprising: In the first step, a second oxide film is deposited on the substrate to form a dummy pattern, a first resist for forming the dummy pattern is formed, and the second oxide film is formed Etching to form a dummy pattern, removing the first resist, depositing a first nitride film, etching the first nitride film, leaving a sidewall, and surrounding the dummy pattern First nitride film sidewalls are formed, the dummy pattern is removed, the substrate is etched using the first nitride film sidewalls as a mask, and first fins connected at respective ends to form closed loops Forming a silicon-like layer and a second fin-like silicon layer, and forming a first insulating film around the first fin-like silicon layer and the second fin-like silicon layer;
The first nitride film sidewall is removed, the first insulating film is etched back, and an upper part of the first fin-like silicon layer and an upper part of the second fin-like silicon layer are exposed, and the first Forming a second resist so as to be orthogonal to the first fin-like silicon layer and the second fin-like silicon layer, etching the first fin-like silicon layer and the second fin-like silicon layer;
By removing the second resist, the first columnar silicon layer is formed so that a portion where the first fin-shaped silicon layer and the second resist are orthogonal to each other becomes the first columnar silicon layer. 2. The second columnar silicon layer is formed so that a portion where the second fin-shaped silicon layer and the second resist are orthogonal to each other is the second columnar silicon layer. Semiconductor device manufacturing method. After the first step, the second step, the entire structure after the first step,
A third oxide film is deposited, a second nitride film is formed, the second nitride film is etched and left as a sidewall, and a third resist for forming an n-type diffusion layer is formed. Then, an impurity is implanted to form an n-type diffusion layer on the first columnar silicon layer and on the first fin-like silicon layer, the third resist is removed, and the second nitride film and the The third oxide film is removed, heat treatment is performed, a fourth oxide film is deposited, a third nitride film is formed, the third nitride film is etched and left in a sidewall shape, and p-type A fourth resist for forming a diffusion layer is formed, impurities are implanted, and a p-type diffusion layer is formed on the second columnar silicon layer and on the second fin-shaped silicon layer, and the fourth The resist is removed, the fourth oxide film and the third nitride film are removed, and heat treatment is performed. The method of manufacturing a semiconductor device according to claim 1, wherein the door. After the second step, in the third step, a gate insulating film is formed so as to surround the columnar silicon layer, polysilicon is deposited,
The upper surface of the polysilicon after planarization is higher than the gate insulating film on the n-type diffusion layer above the first columnar silicon layer, and above the p-type diffusion layer above the second columnar silicon layer. Planarization is performed to be higher than the gate insulating film, a fourth nitride film is deposited, and a fifth polysilicon gate electrode, a second polysilicon gate electrode, and a polysilicon gate wiring are formed. Forming the resist, etching the fourth nitride film, etching the polysilicon, forming the first polysilicon gate electrode, the second polysilicon gate electrode, and the polysilicon gate wiring, The method for manufacturing a semiconductor device according to claim 1, wherein the gate insulating film is etched to remove the fifth resist.   In the fourth step, a fifth nitride film is deposited on the entire structure after the third step, the fifth nitride film is etched, left in a sidewall shape, and a metal is deposited. 5. The semiconductor device according to claim 4, wherein silicide is formed on the n-type diffusion layer and the p-type diffusion layer above the first fin-like silicon layer and the second fin-like silicon layer. Production method. In the fifth step, the entire structure after the fourth step,
A sixth nitride film is deposited, an interlayer insulating film is deposited, planarized by chemical mechanical polishing, and the first polysilicon gate electrode, the second polysilicon gate electrode, and the polysilicon gate wiring are exposed by chemical mechanical polishing. Etching the first polysilicon gate electrode, the second polysilicon gate electrode and the polysilicon gate wiring, depositing metal, and forming the first polysilicon gate electrode and the second polysilicon gate electrode; The metal is buried in the portion where the polysilicon gate wiring is present, the metal is etched, and the gate insulating film on the n-type diffusion layer above the first columnar silicon layer and the p above the second columnar silicon layer are etched. And exposing a gate insulating film on the mold diffusion layer to form a first metal gate electrode, a second metal gate electrode, and a metal gate wiring. The method of manufacturing a semiconductor device according to Motomeko 5. A first fin-like semiconductor layer formed on a substrate;
A second fin-shaped semiconductor layer formed on the substrate, and wherein the first fin-shaped semiconductor layer and the second fin-shaped semiconductor layer are formed using sidewalls formed around a dummy pattern; A first insulating film formed around the first fin-shaped semiconductor layer and the second fin-shaped semiconductor layer;
A first columnar semiconductor layer formed on the first fin-like semiconductor layer;
A second columnar semiconductor layer formed on the second fin-shaped semiconductor layer;
An n-type diffusion layer formed above the first fin-like semiconductor layer and below the first columnar semiconductor layer;
An n-type diffusion layer formed on the first columnar semiconductor layer;
A p-type diffusion layer formed above the second fin-like semiconductor layer and below the second columnar semiconductor layer;
A p-type diffusion layer formed on the second columnar semiconductor layer;
Silicide formed on an upper portion of the first fin-like semiconductor layer, an n-type diffusion layer on the upper portion of the second fin-like semiconductor layer, and an upper portion of the p-type diffusion layer;
A gate insulating film formed around the first columnar semiconductor layer;
A first metal gate electrode formed around the gate insulating film;
A gate insulating film formed around the second columnar semiconductor layer;
A second metal gate electrode formed around the gate insulating film;
The first fin-like semiconductor layer connected to the first metal gate electrode and the second metal gate electrode, and the metal gate wiring extending in a direction perpendicular to the second fin-like semiconductor layer; A first contact formed on an n-type diffusion layer formed on the first columnar semiconductor layer;
A second contact formed on a p-type diffusion layer formed on the second columnar semiconductor layer,
The n-type diffusion layer formed on the first columnar semiconductor layer and the first contact are directly connected, and the p-type diffusion layer formed on the second columnar semiconductor layer and the second contact. Is a semiconductor device which is directly connected.

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