JP5808725B2 - Etching method - Google Patents

Description

  The present invention relates to an etching method using plasma, a sapphire substrate processed by the etching method, and a light-emitting element including the sapphire substrate.

  As a method for etching a workpiece, a substrate having a resist film formed on the surface is generally etched using the resist film as a mask (see, for example, Patent Document 1). For example, in the etching method described in Patent Document 1, a sapphire substrate is etched by exciting a mixed gas obtained by adding a carbon-based gas to an etching gas into a plasma state, and the flow rate of the carbon-based gas is adjusted by adjusting the flow rate of the carbon-based gas. The taper shape is adjusted.

JP 2011-134800 A

  By the way, in the conventional etching method, the etching process is performed in consideration of the selection ratio determined by the material of the workpiece and the resist. However, when processing a fine and deep shape on a workpiece, processing of a desired shape cannot be performed unless a material with an appropriate selection ratio exists.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an etching method capable of increasing the etching selectivity between a workpiece and a resist, and a sapphire substrate processed by this etching method. And it is providing a light emitting element provided with this sapphire substrate.

  In order to achieve the object, in the present invention, a resist film forming step of forming a resist film on a workpiece, a pattern forming step of forming a predetermined pattern on the resist film, and the resist on which the pattern is formed Exposing the film to plasma under predetermined alteration conditions, altering the resist film to increase the etching selectivity, and exposing the workpiece to plasma under etching conditions different from the alteration conditions And an etching process for the workpiece, which etches the workpiece using the resist film having a high etching selectivity as a mask.

  In the etching method, the condition for alteration may have a lower bias output than the condition for etching.

  In the etching method, the workpiece may be a substrate mask layer formed on a predetermined substrate.

  The etching method may include a substrate etching step of etching the substrate to be processed using the etched substrate mask layer as a mask.

  In the etching method, an uneven shape having a period of 1 μm or less may be formed on the substrate to be processed in the substrate etching step.

  In the etching method, an uneven shape with a depth of 300 nm or more may be formed on the substrate to be processed.

  In the etching method, the substrate to be processed may be sapphire.

  Moreover, in this invention, the sapphire board | substrate with which the uneven | corrugated process was given by the said etching method is provided.

  Furthermore, in this invention, the light emitting element which has the said sapphire substrate and the semiconductor light emitting layer formed on the said sapphire substrate is provided.

  According to the present invention, it is possible to increase the selection ratio between the workpiece and the resist.

FIG. 1 is a schematic explanatory view of a plasma etching apparatus showing an embodiment of the present invention. FIG. 2 is a flowchart showing an etching method. FIG. 3A shows the process of the etching method of the substrate to be processed and the mask layer, (a) shows the substrate to be processed before processing, (b) shows the state in which the mask layer is formed on the substrate to be processed, (c ) Shows a state where a resist film is formed on the mask layer, (d) shows a state where a mold is brought into contact with the resist film, and (e) shows a state where a pattern is formed on the resist film. FIG. 3B shows a process of the etching method of the substrate to be processed and the mask layer, (f) shows a state in which the residual film of the resist film is removed, (g) shows a state in which the resist film is altered, and (h) Indicates a state in which the mask layer is etched using the resist film as a mask, and (i) indicates a state in which the substrate to be processed is etched using the mask layer as a mask. FIG. 3C shows the process of the etching method of the substrate to be processed and the mask layer, (j) shows a state in which the substrate to be processed is further etched using the mask layer as a mask, and (k) shows the mask layer remaining from the substrate to be processed. The removed state is shown, and (l) shows a state in which wet etching is performed on the substrate to be processed. 4A and 4B show a substrate to be processed, where FIG. 4A shows a schematic perspective view, and FIG. 4B shows an AA cross-sectional view. FIG. 5 is a schematic cross-sectional view of a light-emitting element provided with a substrate to be processed.

FIG. 1 is a schematic explanatory view of a plasma etching apparatus showing an embodiment of the present invention.
As shown in FIG. 1, the plasma etching apparatus 1 is an inductively coupled (ICP) type, a flat substrate holding table 2 that holds a substrate to be processed 100, a container 3 that houses the substrate holding table 2, and a container 3, a coil 4 provided via a quartz plate 6, and a power source 5 connected to the substrate holder 2. The coil 4 is a three-dimensional spiral coil, which supplies high-frequency power from the center of the coil and is grounded at the outer periphery of the coil. The substrate 100 to be etched is placed on the substrate holder 2 directly or via a transfer tray. The substrate holder 2 has a built-in cooling mechanism for cooling the substrate 100 to be processed, and is controlled by the cooling control unit 7. The container 3 has a supply port and can supply various gases such as O ₂ gas and Ar gas.

  In performing etching with the plasma etching apparatus 1, the substrate 100 to be processed is placed on the substrate holder 2, and then the air in the container 3 is discharged to make a reduced pressure state. Then, a predetermined processing gas is supplied into the container 3 to adjust the gas pressure in the container 3. Thereafter, high-frequency high-frequency power is supplied to the coil 4 and the substrate holder 2 for a predetermined time to generate a reactive gas plasma 8. The substrate 8 to be processed is etched by the plasma 8.

Next, an etching method using the plasma etching apparatus 1 will be described with reference to FIGS. 2, 3A, and 3B.
FIG. 2 is a flowchart showing an etching method. As shown in FIG. 2, the etching method of this embodiment includes a mask layer forming step S1, a resist film forming step S2, a pattern forming step S3, a residual film removing step S4, a resist alteration step S5, and a mask layer. Etching step S6, substrate etching step S7, mask layer removing step S8, and curved portion forming step S9.

FIG. 3A shows the process of the etching method of the substrate to be processed and the mask layer, (a) shows the substrate to be processed before processing, (b) shows the state in which the mask layer is formed on the substrate to be processed, (c ) Shows a state where a resist film is formed on the mask layer, (d) shows a state where a mold is brought into contact with the resist film, and (e) shows a state where a pattern is formed on the resist film.
FIG. 3B shows a process of the etching method of the substrate to be processed and the mask layer, (f) shows a state in which the residual film of the resist film is removed, (g) shows a state in which the resist film is altered, and (h) Indicates a state in which the mask layer is etched using the resist film as a mask, and (i) indicates a state in which the substrate to be processed is etched using the mask layer as a mask. Incidentally, the resist film after the alteration is expressed by painting out in the drawing.
FIG. 3C shows the process of the etching method of the substrate to be processed and the mask layer, (j) shows a state in which the substrate to be processed is further etched using the mask layer as a mask, and (k) shows the mask layer remaining from the substrate to be processed. The removed state is shown, and (l) shows a state in which wet etching is performed on the substrate to be processed.

  First, as shown in FIG. 3A (a), a substrate to be processed 100 before processing is prepared. Prior to etching, the substrate to be processed 100 is cleaned with a predetermined cleaning liquid. In the present embodiment, the substrate to be processed 100 is a sapphire substrate.

Next, as shown in FIG. 3A (b), a mask layer 110 is formed on the substrate to be processed 100 (mask layer forming step: S1). In the present embodiment, the mask layer 110 has a SiO ₂ layer 111 on the substrate to be processed 100 and a Ni layer 112 on the SiO ₂ layer 111. The thickness of each of the layers 111 and 112 is arbitrary. For example, the SiO ₂ layer can be 1 nm to 100 nm and the Ni layer 112 can be 1 nm to 100 nm. Note that the mask layer 110 may be a single layer. The mask layer 110 is formed by a sputtering method, a vacuum evaporation method, a CVD method, or the like.

  Next, as shown in FIG. 3A (c), a resist film 120 is formed on the mask layer 110 (resist film forming step: S2). In this embodiment, a thermoplastic resin is used as the resist film 120 and is formed to have a uniform thickness by a spin coating method. The resist film 120 is made of, for example, an epoxy resin and has a thickness of, for example, 100 nm or more and 300 nm or less.

  Then, the resist film 120 is heated and softened together with the substrate to be processed 100, and the resist film 120 is pressed with a mold 130 as shown in FIG. 3A (d). An uneven structure 131 is formed on the contact surface of the mold 130, and the resist film 120 is deformed along the uneven structure 131.

  Thereafter, the resist film 120 is cooled and cured together with the substrate to be processed 100 while keeping the pressed state. Then, by separating the mold 200 from the resist film 120, the concavo-convex structure 121 is transferred to the resist film 120 as shown in FIG. 3A (e) (pattern forming step: S3). Here, the period of the concavo-convex structure 121 is 1 μm or less. In the present embodiment, the period of the concavo-convex structure 121 is 500 nm. In the present embodiment, the width of the convex portion 123 of the concavo-convex structure 121 is not less than 100 nm and not more than 300 nm. Moreover, the height of the convex part 123 is 100 nm or more and 300 nm or less. In this state, a residual film 122 is formed in the recess of the resist film 120.

The substrate to be processed 100 on which the resist film 120 is formed as described above is attached to the substrate holder 2 of the plasma etching apparatus 1. Then, the residual film 122 is removed by, for example, plasma ashing to expose the mask layer 110 that is a workpiece as shown in FIG. 3B (f) (residual film removing step: S4). In the present embodiment, O ₂ gas is used as a processing gas for plasma ashing. At this time, the convex portion 123 of the resist film 120 is also affected by ashing, and the side surface 124 of the convex portion 123 is not perpendicular to the surface of the mask layer 110 but is inclined by a predetermined angle.

  Then, as shown in FIG. 3B (g), the resist film 120 is exposed to plasma under the condition for alteration, thereby altering the resist film 120 and increasing the etching selectivity (resist alteration step: S5). In the present embodiment, Ar gas is used as a process gas for altering the resist film 120. In the present embodiment, the alteration condition is set such that the bias output of the power source 5 is lower than the etching condition described later.

  Thereafter, the mask layer 110 as a workpiece is etched using the resist film 120 that has been exposed to plasma under etching conditions and has a high etching selectivity as a mask (mask layer etching step: S6). In the present embodiment, Ar gas is used as a processing gas for etching the resist film 120. As a result, a pattern 113 is formed in the mask layer 110 as shown in FIG.

  Here, the processing gas, the antenna output, the bias output, and the like can be changed as appropriate for the alteration condition and the etching condition, but it is preferable to change the bias output using the same processing gas as in this embodiment. Specifically, regarding the condition for alteration, when the processing gas is Ar gas, the antenna output of the coil 4 is 350 W, and the bias output of the power supply 5 is 50 W, curing of the resist film 120 was observed. Etching of the mask layer 110 was observed when the etching gas was Ar gas, the antenna output of the coil 4 was 350 W, and the bias output of the power source 5 was 100 W. In addition to lowering the bias output relative to the etching conditions, the resist can be cured even if the antenna output is reduced or the gas flow rate is reduced.

Next, as shown in FIG. 3B (i), the substrate to be processed 100 is etched using the mask layer 110 as a mask (etching step of the substrate to be processed: S7). In the present embodiment, etching is performed with the resist film 120 remaining on the mask layer 110. Further, plasma etching is performed using a chlorine-based gas such as BCl ₃ gas as a processing gas.

  Then, as shown in FIG. 3C (j), as etching progresses, a concavo-convex structure 101 is formed on the substrate 100 to be processed. In the present embodiment, the height of the concavo-convex structure 101 is 500 nm. Note that the height of the concavo-convex structure 101 can be larger than 500 nm. Here, if the height of the concavo-convex structure 101 is relatively shallow, for example, 300 nm, the etching may be finished with the resist film 120 remaining as shown in FIG. 3B (i). .

In the present embodiment, side etching is promoted by the SiO ₂ layer 111 of the mask layer 110, and the side surface 103 of the convex portion 102 of the concavo-convex structure 101 is inclined. Further, the state of side etching can also be controlled by the inclination angle of the side surface 123 of the resist film 120. If the mask layer 110 is a single layer of the Ni layer 112, the side surface 103 of the convex portion 102 can be made substantially perpendicular to the main surface.

Thereafter, as shown in FIG. 3B (k), the mask layer 110 remaining on the substrate to be processed 100 is removed using a predetermined stripping solution (mask layer removing step: S8). In this embodiment, after removing the Ni layer 112 by using high-temperature nitric acid, the SiO ₂ layer 111 is removed by using hydrofluoric acid. Note that even if the resist film 120 remains on the mask layer 110, it can be removed together with the Ni layer 112 with high-temperature nitric acid. However, if the residual amount of the resist film 120 is large, the resist film 120 is previously obtained by O ₂ ashing. Is preferably removed.

  Then, as shown in FIG. 3B (l), the corner of the convex portion 102 is removed by wet etching to form a curved portion (curved portion forming step: S9). Here, the etching solution is arbitrary, but for example, a phosphoric acid aqueous solution heated to about 170 ° C., so-called “hot phosphoric acid” can be used. In addition, this bending part formation process can be abbreviate | omitted suitably. Through the above steps, the substrate to be processed 100 having the concavo-convex structure 101 on the surface is manufactured.

  According to the etching method of the substrate to be processed 100, the resist film 120 is exposed to plasma and altered, so that the etching selectivity between the mask layer 110 and the resist film 120 can be increased. Thereby, it becomes easy to process the mask layer 110 with a fine and deep shape, and the mask layer 110 with a fine shape can be formed sufficiently thick.

  Further, the plasma etching apparatus 1 can continuously perform the alteration of the resist film 120 and the etching of the mask layer 110, and the man-hour is not significantly increased. In the present embodiment, the resist film 120 is altered and the mask layer 110 is etched by changing the bias output of the power supply 5, and the selectivity of the resist film 120 can be easily increased.

  Furthermore, since the substrate to be processed 100 is etched using the sufficiently thick mask layer 110 as a mask, it becomes easy to process the substrate 100 to be processed in a fine and deep shape. In particular, in the sapphire substrate, the formation of the concavo-convex structure 101 having a period of 1 μm or less and a depth of 300 nm or more forms a resist film on the substrate on which the mask layer is formed, and uses the resist film to form the mask layer. The etching method that performs etching has been impossible in the past, but is possible with the etching method of the present embodiment. In particular, the etching method of this embodiment is suitable for forming a concavo-convex structure having a period of 1 μm or less and a depth of 500 nm or more.

  The nanoscale periodic concavo-convex structure is referred to as moth eye. However, when this moth eye is processed on sapphire, sapphire is a difficult-to-cut material and can only be processed to a depth of about 200 nm. However, a step of about 200 nm may be insufficient as a moth eye. It can be said that the etching method of this embodiment has solved a novel problem in the case of performing moth-eye processing on a sapphire substrate.

  In addition, although what formed a resist pattern using a nanoimprint technique was shown, you may form a resist pattern by electron beam irradiation using a stencil mask etc., for example.

Further, although the mask layer 110 made of SiO ₂ / Ni is shown as a workpiece, it goes without saying that the mask layer 110 may be a single Ni layer or other material. In short, the resist may be altered to increase the etching selectivity between the mask layer 110 and the resist film 120.

  Further, although the substrate to be processed 100 is etched using the mask layer 110, the substrate to be processed 100 may be etched without using the mask layer 110. In this case, the substrate to be processed 100 becomes a material to be processed, and a resist film 120 is formed on the substrate to be processed 100, and the resist is altered to increase the etching selectivity.

  In addition, the change of the bias output of the plasma etching apparatus 1 is shown as the condition for alteration and the condition for etching. However, in addition to changing the antenna output and the gas flow rate, for example, it may be set by changing the processing gas. Good. In short, the condition for alteration may be a condition in which the resist is altered when the resist is exposed to plasma and the etching selectivity is increased.

  Further, although sapphire is used as the substrate to be processed 100 and the Ni layer 110 is included as the mask layer 110, it is needless to say that the present invention can be applied to etching of other materials. For example, SiC, Si, GaAs, GaN, InP, ZnO or the like can be used as a substrate for etching.

4A and 4B show a substrate to be processed, where FIG. 4A shows a schematic perspective view, and FIG. 4B shows an AA cross-sectional view.
The processed substrate 100 manufactured through the above-described steps will be described. In the present embodiment, as shown in FIGS. 4A and 4B, the concavo-convex structure 101 has a plurality of convex portions 102 formed periodically, and a concave portion is formed between the convex portions 102. ing. In this embodiment, the shape of each convex part 102 is a frustum shape which cut off the upper part of the cone. In addition, the shape of the convex part 102 can be made into other frustum shapes, such as a polygonal frustum other than a truncated cone shape, and can also be made into weights, such as a cone and a polygonal frustum. Note that the concave portion instead of the convex portion 102 may have a shape such as a weight, a frustum, or a frustum. In the present embodiment, the concavo-convex structure 101 is formed in alignment with the intersection of the virtual triangular lattice at a predetermined cycle so that the center of each convex portion 102 is the position of the apex of the regular triangle in plan view. The

  In this embodiment, the period of each convex part 102 is 500 nm. Here, the period refers to the distance between the height peak positions of adjacent convex portions 102. In addition, each convex portion 102 has a base end diameter of 200 nm and a height of 600 nm. In addition, the period, dimension, shape, etc. of each convex part 102 can be changed suitably.

  And the light emitting element 200 shown, for example in FIG. 5 can be manufactured using this to-be-processed substrate 100. FIG. The light emitting element 200 is a face-up type LED, and a group III nitride semiconductor layer is formed on the surface of the substrate 100 to be processed having the concavo-convex structure 101. The group III nitride semiconductor layer has a buffer layer 210, an n-type GaN layer 212, a multiple quantum well active layer 214, an electron block layer 216, and a p-type GaN layer 218 in this order from the substrate 100 to be processed. A p-side electrode 220 is formed on the p-type GaN layer 218, and an n-side electrode 224 is formed on the n-type GaN layer 212. A reflective film 226 made of, for example, Al is formed on the back surface side of the sapphire substrate 2.

  The buffer layer 210 is made of AlN, the n-type GaN layer 212 is made of n-GaN, and the multiple quantum well active layer 214 is made of GalnN / GaN. In the present embodiment, the peak wavelength of light emission of the multiple quantum well active layer 214 is 450 nm. The electron block layer 216 is composed of p-AIGaN, and the p-type GaN layer 218 is composed of p-GaN. The n-type GaN layer 212 to the p-type GaN layer 218 are formed by epitaxial growth of a group III nitride semiconductor, and the concavo-convex structure 101 exists on the substrate 100 to be processed. Is flattened.

  The p-side electrode 220 is made of a transparent material such as ITO (Indium Tin Oxide). The n-side electrode 224 is formed on the exposed n-type GaN layer 212 by etching the n-type GaN layer 212 from the p-type GaN layer 218. The n-side electrode 224 is made of, for example, Ti / Al / Ti / Au.

  In the light emitting element 200, the surface of the reflective film 226 on the substrate 100 side forms the reflective surface 228, and light emitted from the active layer 214 is transmitted through the interface of the concavo-convex structure 101 by diffraction. Light is reflected by the reflecting surface 228. Thereby, the light transmitted by the diffractive action is re-incident on the interface, and the light is transmitted again using the diffractive action at the interface, whereby the light can be extracted outside the element in a plurality of modes. In order to obtain this diffraction effect, the period of each convex portion 101 is preferably larger than the optical wavelength of the light emitted from the multiple quantum well active layer 214 and smaller than the coherent length of the light.

Here, the optical wavelength means a value obtained by dividing the actual wavelength by the refractive index. The coherent length corresponds to the distance until the periodic oscillations of the waves cancel each other and the coherence disappears due to differences in individual wavelengths of the photon group having a predetermined spectral width. The coherent length lc is approximately lc = (λ ² / Δλ), where λ is the wavelength of light and Δλ is the half width of the light. Here, the period of each convex part 102 is preferably larger than twice the optical wavelength of the light emitted from the multiple quantum well active layer 214. Moreover, it is preferable that the period of each convex part 102 is half or less of the coherent length of the light emitted from the multiple quantum well active layer 214.

  In this embodiment, the period of each convex part 102 is 500 nm. Since the wavelength of light emitted from the active layer 214 is 450 nm and the refractive index of the group III nitride semiconductor layer is 2.4, the optical wavelength thereof is 187.5 nm. Further, since the half width of the light emitted from the active layer 214 is 63 nm, the coherent length of the light is 3214 nm. That is, the period of the concavo-convex structure 101 is greater than twice the optical wavelength of the active layer 214 and less than or equal to half the coherent length.

  Thus, although what used the to-be-processed substrate 100 which consists of sapphire for the light emitting element 200 was illustrated, the to-be-processed substrate 100 can also be used for another device, and about other specific uses etc. suitably It can be changed.

DESCRIPTION OF SYMBOLS 1 Plasma etching apparatus 2 Substrate holding stand 3 Container 4 Coil 5 Power supply 6 Quartz plate 7 Cooling control part 8 Plasma 100 Processed substrate 101 Uneven structure 102 Convex part 103 Side surface 200 Light emitting element 210 Buffer layer 212 N-type GaN layer 214 Multiple quantum well Active layer 216 Electron blocking layer 218 p-type GaN layer 220 p-side electrode 224 n-side electrode 226 reflective film 228 reflective surface

Claims (8)

A resist film forming step of forming a resist film on the substrate mask layer on the sapphire substrate;
A pattern forming step of forming a predetermined pattern on the resist film;
A resist alteration step of applying a bias output of alteration conditions, inducing Ar gas plasma to the substrate mask layer, altering the resist film on which the pattern is formed, and increasing an etching selectivity;
Applying a bias output higher than the condition for alteration, guiding Ar plasma to the mask layer for the substrate, and etching the mask layer for the substrate using the resist film having a high etching selectivity as a mask A material etching process;
Etching the substrate using the etched substrate mask layer as a mask to etch the sapphire substrate to form a concavo-convex shape on the sapphire substrate.   The etching method according to claim 1, wherein an uneven shape having a depth of 300 nm or more is formed on the sapphire substrate in the substrate etching step.   The etching method according to claim 1, further comprising a residual film removing step of removing the residual film of the resist film by plasma ashing after the pattern forming step.   4. The method according to claim 1, wherein after the resist film is pressed with a mold in the pattern forming step, the resist film is cured while the pressed state is maintained, and the uneven structure of the mold is transferred to the resist film. 2. The etching method according to item 1.   5. The etching method according to claim 1, wherein the sapphire substrate is etched in a state in which the resist film remains on the substrate mask layer in the substrate etching step. 6. The substrate mask layer has a SiO ₂ layer on the sapphire substrate and a Ni layer on the SiO ₂ layer,
The etching method according to claim 5, wherein the sapphire substrate is etched in a state where the SiO ₂ layer, the Ni layer, and the resist film are laminated in the substrate etching step.   The etching method according to claim 5, further comprising a mask layer removing step of removing the substrate mask layer remaining on the sapphire substrate using a predetermined stripping solution after the substrate etching step. 8. The substrate mask layer remaining on the sapphire substrate is removed using a predetermined stripping solution after removing the resist film in advance by O ₂ ashing in the mask layer removing step. 9. Etching method.

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