JP5805113B2 - Adhesive tape and method for manufacturing semiconductor device using adhesive tape - Google Patents

Description

  The present invention relates to an adhesive tape and a method of manufacturing a semiconductor device using the adhesive tape, and more particularly, to pick up a chip that is a radiation non-curing type in which the adhesive force does not change due to radiation irradiation and is divided into wafers. The present invention relates to a pressure-sensitive adhesive tape used in manufacturing and a method for manufacturing a semiconductor device using the pressure-sensitive adhesive tape.

  2. Description of the Related Art Conventionally, semiconductor-related materials for semiconductor wafers and semiconductor packages are cut using a cutting blade such as a rotary blade and separated into small semiconductor elements and IC components. For example, a semiconductor wafer made of silicon, germanium, gallium-arsenide, or the like is manufactured in a large diameter state and then back-grinded (back grind) until a predetermined thickness is obtained. Back surface processing (etching processing, polishing processing, etc.) is performed. Next, the semiconductor wafer is cut (diced) and separated and collected (pickup), and then mounted in a mount and mold process. In this dicing process, an adhesive tape for dicing is used to fix and hold a semiconductor processing wafer and cut it into chips.

  The dicing pressure-sensitive adhesive tape is required to have a strong holding property in order to prevent yield reduction and breakage of the dicing blade due to the chips being scattered by the impact of the dicing blade cutting the wafer during cutting. Further, when peeling and collecting, the chip is peeled from the tape by pushing up the chip with a push-up pin from the back side of the tape, so that easy peelability is required in order to prevent chip cracking and yield reduction due to poor peeling. As described above, the dicing adhesive tape is required to have a contradictory performance in the dicing process and the pick-up process, and in order to achieve these requirements, radiation curable dicing whose adhesive force changes due to radiation irradiation. It is known to use a pressure-sensitive adhesive tape (for example, see Patent Document 1).

  By the way, in recent years, the spread of IC cards has progressed, and it is desired to reduce the thickness of chips. For this reason, it is necessary to reduce the thickness of a semiconductor chip, which has conventionally been about 350 μm, to a thickness of 50 to 100 μm or less. In order to achieve such thinning of the chip, a new wafer cutting method has been proposed. Half-cut dicing process (for example, refer to Patent Document 2) for processing a groove to be a crease without completely cutting the wafer, or a condensing point of a pulsed laser beam having a wavelength transmissive to the wafer A process for making the wafer easy to cut, such as a stealth dicing process (for example, refer to Patent Document 3) for forming a band-shaped modified region inside the wafer in accordance with the thickness, and then applying an external force, etc. A method of cutting has been proposed. These methods are effective in reducing defects such as chipping, particularly when the wafer is thin. Moreover, when stealth dicing is used, a kerf line is not required, so that an improvement in yield can be expected.

  Further, as a method for applying external force, a semiconductor chip manufacturing method is disclosed in which a condensing point is aligned inside a wafer, a modified layer is formed by laser irradiation, and then grinding is performed from the back surface side until reaching the modified region. (For example, see Patent Document 4). This method is called a “first dicing method”, and a thin chip can be efficiently manufactured by simultaneously grinding the back surface of the wafer and dividing it into individual chips.

JP 2005-19607 A JP 2002-192370 A JP 2003-338467 A JP2012-124300A

  Thus, in recent years, a new dicing method has been proposed, and as a result, the characteristics required for the adhesive tape for dicing have also changed. Here, when the manufacturing process of the semiconductor device is performed using the stealth dicing method, unlike the dicing method using the blade, the kerf line is not formed between the chips, so the radiation curing type dicing adhesive tape is used for radiation irradiation. When the tape is cured, the original chip interval is lost due to curing shrinkage (kerf shift), making it difficult for the chip to be peeled off during the pick-up process, and causing problems due to contact between the chips. It has become.

  In the stealth dicing method, processing of a thin wafer having a thickness of 100 μm or less is often used as described above, and chip cracking during pick-up is a problem. For this reason, the pressure-sensitive adhesive tape is required to have a lighter peeling performance than general blade dicing applications.

  In view of this, the present invention provides a kerf by the adhesive biting into the chip due to curing shrinkage caused by using a radiation curable dicing adhesive tape in a dicing process in which a kerf line is not formed on the wafer, such as a stealth dicing method or a tip dicing method. An object of the present invention is to provide a radiation non-curing pressure-sensitive adhesive tape that does not shift, can be easily peeled off from the tape during pick-up, and does not peel off from the ring frame when expanded.

  In order to solve the above-mentioned problems, the adhesive tape according to the present invention forms a modified region inside the wafer by irradiating a laser with a focusing point inside the wafer having a circuit pattern formed on the surface. An adhesive tape used for picking up a chip divided into chips in the modified region, which is a radiation non-curing type that is not cured by irradiation with radiation, a peeling angle of 180 degrees under conditions of 23 ° C. and 50% RH, The peeling force with the silicon mirror surface at a peeling speed of 300 mm / min is 0.1 to 0.4 N / 25 mm. Under the conditions of 23 ° C. and 50% RH, the peeling angle is 180 degrees and the peeling speed is 300 mm / min. The peel force from the SUS304 surface is 0.4 to 0.8 N / 25 mm.

  The pressure-sensitive adhesive tape has a pressure-sensitive adhesive layer formed on a base film, and the pressure-sensitive adhesive layer has an alkyl group having a carbon number of 4 or more (meth) acrylic acid alkyl ester monomer of 70 to 90% by mass, An isocyanate-based cross-linking agent comprising an acrylic copolymer having a hydroxyl value of 45 to 100 constituted by 10 to 30% by mass of 2-hydroxypropyl acrylate and a polypropylene oxide having a number average molecular weight of 3000 to 10,000. It is preferable to be used and crosslinked.

  Further, the adhesive tape forms (a) a modified region in the wafer by attaching a surface protection tape to the surface of the wafer and irradiating a laser with a focusing point inside the wafer. (B) grinding the back surface of the wafer until reaching the modified region or the vicinity of the modified region; (c) applying the adhesive tape to the back surface of the wafer; and A step of fixing the adhesive tape to a ring frame for holding; (d) a step of peeling off the surface protection tape affixed to the surface of the wafer; and (e) expanding the adhesive tape to form the modified region. It is preferable to use for the manufacturing method of the semiconductor device including the process of picking up the chip | tip divided | segmented by (4).

  In addition, the organic adhesive tape is formed by (a) attaching a surface protection tape to the surface of the wafer, aligning a condensing point inside the wafer, and irradiating a laser to form the modified region inside the wafer. (B) grinding the back surface of the wafer until reaching the modified region or near the modified region, and (c) applying the adhesive tape to the back surface of the wafer and holding the adhesive tape (D) holding the wafer and the ring frame on a holding base, and applying external stress from the back side of the wafer via the adhesive tape, Dividing the wafer into chips along the modified region, (e) peeling the surface protection tape attached to the surface of the wafer, and (f) the above It expands the wearing tape, it is preferable to use the manufacturing method of semiconductor device comprising the steps of picking up the chips.

  In order to solve the above-mentioned problems, a method of manufacturing a semiconductor device according to the present invention includes (a) attaching a surface protection tape to the surface of the wafer, and irradiating a laser with a focusing point inside the wafer. Forming the modified region inside the wafer, (b) grinding the back surface of the wafer until reaching the modified region or the vicinity of the modified region, and (c) the back surface of the wafer. Attaching the adhesive tape to the ring frame, fixing the adhesive tape to a ring frame for holding the adhesive tape, and (d) peeling the surface protection tape attached to the surface of the wafer; e) expanding the adhesive tape and picking up the chips divided in the modified region, and manufacturing the semiconductor device, wherein the adhesive tape comprises radiation It is a radiation non-curing type that is not cured by irradiation, and has a peeling force with respect to the silicon mirror surface at a peeling angle of 180 degrees and a peeling speed of 300 mm / min under conditions of 23 ° C. and 50% RH, 0.1 to 0.4 N / 25 mm, and the peel strength with respect to the SUS304 surface at a peel angle of 180 degrees and a peel speed of 300 mm / min under the conditions of 23 ° C. and 50% RH is 0.4 to 0.8 N / 25 mm. .

  Further, in the method of manufacturing a semiconductor device according to the present invention, (a) a surface protection tape is attached to the surface of the wafer, and a laser beam is irradiated with the focusing point inside the wafer. Forming a quality region; (b) grinding the back surface of the wafer until reaching the modified region or near the modified region; and (c) applying the adhesive tape to the back surface of the wafer; A step of fixing the adhesive tape to a ring frame for holding the adhesive tape; and (d) holding the wafer and the ring frame on a holding table and applying external stress from the back side of the wafer via the adhesive tape. A step of dividing the wafer into chips along the modified region, and (e) a process of peeling the surface protection tape attached to the surface of the wafer. And (f) expanding the adhesive tape and picking up the chip, the method of manufacturing a semiconductor device, wherein the adhesive tape is a radiation non-curing type that is not cured by radiation irradiation, and is 23 ° C. Under the conditions of 50% RH, the peeling force with the silicon mirror surface at a peeling angle of 180 degrees and a peeling speed of 300 mm / min is 0.1 to 0.4 N / 25 mm, and the conditions are 23 ° C. and 50% RH. The peeling force with the SUS304 surface at a peeling angle of 180 degrees and a peeling speed of 300 mm / min is 0.4 to 0.8 N / 25 mm.

  In the manufacturing method of the semiconductor device, the pressure-sensitive adhesive tape has a pressure-sensitive adhesive layer formed on a base film, and the pressure-sensitive adhesive layer has an alkyl group (meth) acrylic acid alkyl ester having 4 or more carbon atoms. Acrylic copolymer having a hydroxyl value of 45 to 100 composed of 70 to 90% by mass of monomer and 10 to 30% by mass of 2-hydroxypropyl acrylate, and polypropylene oxide having a number average molecular weight of 3000 to 10,000 And is preferably crosslinked using an isocyanate-based crosslinking agent.

  According to the present invention, in a dicing process in which a kerf line is not formed on a wafer, such as a stealth dicing method or a tip dicing method, a kerf due to biting of an adhesive into a chip due to curing shrinkage caused by using a radiation curable dicing adhesive tape is used. There is no shift, the chip can be easily peeled off from the tape at the time of pickup, and a radiation non-curing pressure-sensitive adhesive tape that does not peel off from the ring frame at the time of expansion can be provided.

It is sectional drawing which shows typically the structure of the adhesive tape which concerns on embodiment of this invention. It is sectional drawing which shows typically the dicing process by the stealth dicing method using the adhesive tape which concerns on embodiment of this invention. It is sectional drawing which shows typically the dicing process by the stealth dicing method using the adhesive tape which concerns on embodiment of this invention. It is sectional drawing which shows typically the dicing process by the stealth dicing method using the adhesive tape which concerns on embodiment of this invention. It is sectional drawing which shows typically the dicing process by the stealth dicing method using the adhesive tape which concerns on embodiment of this invention. It is sectional drawing which shows typically the expanding process using the adhesive tape which concerns on embodiment of this invention. It is sectional drawing which shows typically the pick-up process using the adhesive tape which concerns on embodiment of this invention. It is sectional drawing which shows typically another method of applying external force in the dicing process by the stealth dicing method using the adhesive tape which concerns on embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail.

  In the pressure-sensitive adhesive tape 1 according to the embodiment of the present invention, at least one pressure-sensitive adhesive layer 3 is formed on at least one side of the base film 2. FIG. 1 is a schematic cross-sectional view showing a preferred embodiment of the radiation non-curable adhesive tape 1 of the present invention. The adhesive tape 1 has a base film 2, and an adhesive is provided on the base film 2. An agent layer 3 is formed. In addition, a separator 4 provided as necessary is formed on the pressure-sensitive adhesive layer 3.

  Hereinafter, each component of the adhesive tape 1 of this embodiment is demonstrated in detail.

(Base film 2)
The base film 2 is not particularly limited, and a known resin such as plastic can be used. In general, a thermoplastic plastic film is used as the base film 2. As the base film 2 to be used, polyethylene, polypropylene, ethylene-propylene copolymer, polyolefin such as polybutene, styrene-hydrogenated isoprene-styrene block copolymer, styrene-isoprene-styrene copolymer, styrene- Thermoplastic elastomers such as hydrogenated butadiene-styrene copolymers and styrene-hydrogenated isoprene / butadiene-styrene copolymers, ethylene-vinyl acetate copolymers, ethylene- (meth) acrylic acid copolymers, ethylene- ( Engineering such as (meth) acrylic acid ester copolymers, ethylene copolymers such as ethylene- (meth) acrylic acid metal salt ionomers, polyethylene terephthalate, polybutylene terephthalate, polycarbonate, polymethyl methacrylate, etc. Plastic, soft polyvinyl chloride, semi-hard polyvinyl chloride, polyester, polyurethane, polyamide, polyimide, natural rubber as well as high molecular material such as synthetic rubber is preferred. Further, a mixture of two or more selected from these groups or a multilayered structure may be used, and any one can be selected depending on the adhesiveness with the pressure-sensitive adhesive layer 3.

  The base film 2 may be a commercially available one or a film formed by a conventional method. The thickness of the base film 2 is not particularly different from the base film 2 of the normal dicing adhesive tape 1. Usually, it is 30-200 micrometers, More preferably, it is 50-150 micrometers.

  The surface of the base film 2 that contacts the pressure-sensitive adhesive layer 3 may be subjected to a corona treatment or a treatment such as a primer in order to improve adhesion.

(Adhesive layer 3)

  As a resin used for the radiation non-curing type pressure-sensitive adhesive layer 3 that is not cured by radiation irradiation, silicon having a peeling angle of 180 degrees and a peeling speed of 300 mm / min under conditions of 23 ° C. and 50% RH of the pressure-sensitive adhesive tape 1 is used. The peel force from the mirror surface is 0.1 to 0.4 N / 25 mm, and the peel force from the SUS304 surface at a peel angle of 180 degrees and a peel speed of 300 mm / min under the conditions of 23 ° C. and 50% RH, If it will be 0.4-0.8N / 25mm, there will be no restriction | limiting in particular, The structural unit derived | led-out from the (meth) acrylic-acid alkylester monomer, 2-hydroxypropyl acrylate, 2-hydroxylethyl ( A structural unit derived from (meth) acrylate and / or 2-hydroxybutyl acrylate, Copolymer contains constituent units derived from the ester monomers can be used, crosslinked with an isocyanate compound.

  In order to make the peel force of the silicon mirror surface and SUS304 within the above range, 70 to 90% by mass of (meth) acrylic acid alkyl ester monomer having 4 or more carbon atoms in the alkyl group, 2-hydroxy The propyl acrylate contains an acrylic copolymer having a hydroxyl value of 45 to 100 composed of 10 to 30% by mass and polypropylene oxide having a number average molecular weight of 3000 to 10,000, and is crosslinked using an isocyanate crosslinking agent. It is preferable to use one.

  Here, (meth) acrylic acid alkyl ester monomers having 4 or more carbon atoms in the alkyl group include butyl (meth) acrylate, hexyl (meth) acrylate, octyl (meth) acrylate, (meth) acrylic acid 2 -Methylpropyl, 2-methylbutyl (meth) acrylate, 2-ethylbutyl (meth) acrylate, 2-methylhexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, (meth) acrylic acid 1,2- Examples thereof include dimethylbutyl and lauryl (meth) acrylate. Among them, those having an alkyl group having 8 or more carbon atoms are particularly preferable.

  The copolymer forming the pressure-sensitive adhesive preferably contains 70 to 90% by mass of a structural unit derived from a (meth) acrylic acid alkyl ester monomer having an alkyl group having 4 or more carbon atoms. When there are too many structural units derived from the (meth) acrylic acid alkyl ester monomer, the crosslinking point of the pressure-sensitive adhesive is reduced, and sufficient characteristics cannot be obtained, and when it is too small, the pressure-sensitive adhesive composition is mixed, and the base film The pot life until it is applied to 2 is shortened, which causes a problem when the pressure-sensitive adhesive tape 1 for dicing of the present invention is produced.

  Moreover, 2-hydroxypropyl acrylate is used as a crosslinkable functional group-containing monomer, and it is preferable that 10-30 mass% is contained as a structural unit. When a functional group-containing monomer such as 2-hydroxyethyl acrylate having a shorter chain length than 2-hydroxypropyl acrylate is used, the cross-linking reaction is quick and the pot life is shortened, which hinders the production of the dicing adhesive tape 1 of the present invention. When a monomer having a long chain length such as 2-hydroxybutyl acrylate is used, the progress of the cross-linking reaction is delayed, and there is a problem that the completion of the cross-linking reaction is extremely prolonged. Further, if the functional group-containing monomer is less than 10% by mass, the polarity is low, the adhesion to the adherend is reduced, the ring frame 9 peels off, and if it exceeds 30% by mass, the adherend is reversed. The adhesiveness becomes excessive, and the chip 11 becomes difficult to peel off from the tape during pick-up.

  The structural unit derived from a (meth) acrylic acid alkyl ester monomer having 4 or more carbon atoms in the alkyl group is 70 to 90% by mass, and the functional group-containing monomer is 2-hydroxyethyl acrylate and / or 2-hydroxypropyl acrylate. The hydroxyl value of the acrylic copolymer is preferably 45 to 100 mgKOH / g. When the hydroxyl value is less than 45 mgKOH / g, the polarity is low, the adhesion to the adherend is reduced, the ring frame 9 peels off, and when it exceeds 100 mgKOH / g, the adhesion to the adherend is reversed. This is because it becomes excessive and the chip 11 is difficult to peel off from the tape at the time of pickup.

  The polypropylene oxide having a number average molecular weight of 3000 to 10,000 is not particularly limited as long as it has a number average molecular weight of 3000 to 10,000, and can be appropriately selected from known polypropylene oxides. When the number average molecular weight is less than 3000, the low molecular weight component moves to the surface of the adherend, and the contamination increases. When the number average molecular weight exceeds 10,000, the compatibility with the acrylic copolymer deteriorates, and the incompatible component is reduced. The number average molecular weight is preferably in the range of 3000 to 10000, because it moves to the adherend surface and increases the contamination.

  The blending amount of the polypropylene oxide is not particularly limited and can be appropriately adjusted within a range in which the desired adhesive strength can be obtained, but is 0.5 to 5 parts by mass with respect to 100 parts by mass of the acrylic copolymer. It can be suitably selected from the range. If the blending amount of polypropylene oxide is less than 0.5 part, it is difficult to peel off the chip 11 (see FIG. 7) from the adhesive tape 1 during pick-up, and if it exceeds 5 parts, contamination of the adherend increases.

  The peel strength of silicon mirror surface and SUS304 is carbon number of alkyl group, (meth) acrylic acid alkyl ester monomer and 2-hydroxypropyl acrylate blending ratio, hydroxyl value, number average molecular weight of polypropylene oxide, blending of polypropylene oxide It can be adjusted by appropriately combining the proportions.

  The copolymer constituting the pressure-sensitive adhesive is crosslinked with an isocyanate compound. The isocyanate compound is not particularly limited. For example, 4,4′-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4′-diphenyl ether diisocyanate, 4,4 ′-[2,2-bis (4- Aromatic isocyanate such as phenoxyphenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, Examples include lysine diisocyanate and lysine triisocyanate. Specifically, Coronate L (trade name, manufactured by Nippon Polyurethane Co., Ltd.) or the like can be used as a commercial product.

  In the pressure-sensitive adhesive layer 3, the content of the isocyanate compound is preferably 2 to 12 parts by mass with respect to 100 parts by mass of the copolymer. When the isocyanate compound is less than 2 parts by mass, the crosslinking is insufficient and the cohesiveness is low, and the adhesive residue to which the adhesive residue adheres to the adherend increases when the adherend is peeled off. This is because when the isocyanate compound exceeds 12 parts by mass, the pot life until the pressure-sensitive adhesive composition is mixed and applied to the base film 2 is shortened, and trouble occurs when the pressure-sensitive adhesive tape 1 is produced.

  In the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 3, if necessary, for example, a tackifier, an anti-aging agent, a filler, a colorant, a flame retardant, an antistatic agent, a softening agent, and an antioxidant. Known additives such as an agent, a plasticizer, and a surfactant may be included.

  The pressure-sensitive adhesive layer 3 can be formed using a conventional method for forming the pressure-sensitive adhesive layer 3. For example, a method of forming the pressure-sensitive adhesive composition on a predetermined surface of the substrate film 2 and a method of forming the pressure-sensitive adhesive composition on a release film (for example, a plastic film or sheet coated with a release agent) Etc.) After forming the pressure-sensitive adhesive layer 3 on the substrate, the pressure-sensitive adhesive layer 3 can be formed on the substrate film 2 by a method of transferring the pressure-sensitive adhesive layer 3 to a predetermined surface of the substrate. . The pressure-sensitive adhesive layer 3 may have a single layer form or a laminated form.

  Moreover, 3-20 micrometers is preferable and, as for the thickness of the adhesive layer 3, More preferably, it is 5-15 micrometers. If the pressure-sensitive adhesive is less than 5 μm, the wafer 5 cannot be sufficiently held when the wafer 5 is conveyed, and if the pressure-sensitive adhesive is thicker than 15 μm, the adhesiveness becomes excessive, and pickup failure or chip 11 (see FIG. 7). This is because an adhesive residue is generated.

  As a result of intensive studies on the adhesive properties of the adhesive tape 1, the inventors have made the peeling force with respect to the silicon mirror surface 0.1 to 0.4 N / 25 mm tape width so that the peripheral chip 11 does not vary during pickup. It was found that the chip 11 can be easily peeled from the tape. On the other hand, if the peel force is less than 0.1 N / 25 mm tape width, the problem of peripheral chip 11 scattering during pick-up increases, and if it is greater than 0.4 N / 25 mm tape width, It became clear that the chip 11 (see FIG. 7) could not be peeled off and pickup failure occurred.

  Furthermore, as a result of intensive studies on the adhesive properties of the adhesive tape 1, the present inventors set the adhesive strength against SUS304 to 0.4 to 0.8 N / 25 mm tape width, so that the tape can be stretched (expanded) in the pickup process. It was found that peeling from the SUS ring frame 9 (see FIGS. 6 and 7) due to the stress and adhesive residue could be suppressed. On the other hand, when the peeling force is less than 0.4 N / 25 mm tape width, the adhesive force is insufficient and the tape peeling from the ring frame 9 (see FIGS. 6 and 7) frequently occurs, and most of the ring frame part peels off. When expanding, the chip interval cannot be expanded and picking up becomes difficult, and even when the peeling of the ring frame is small, there is a concern that peeling will worsen when storing in the wafer cassette during re-pickup or frame collection, and the process may stop. Arise. In addition, when it was larger than 0.8 N / 25 mm tape width, it became clear that the adhesiveness was excessive and the adhesive residue on the ring frame 9 (see FIGS. 6 and 7) increased.

(Separator 4)
The separator 4 is used for the purpose of protecting the pressure-sensitive adhesive layer 3, for the purpose of easily performing label processing for cutting the pressure-sensitive adhesive tape 1 into a predetermined shape, and for the purpose of smoothing the pressure-sensitive adhesive as necessary. Provided. Examples of the constituent material of the separator 4 include synthetic resin films such as paper, polyethylene, polypropylene, and polyethylene terephthalate. In order to improve the peelability from the pressure-sensitive adhesive layer 3, the surface of the separator 4 may be subjected to a peeling treatment such as silicone treatment, long-chain alkyl treatment, or fluorine treatment as necessary. Moreover, the ultraviolet-ray prevention process may be performed as needed so that an adhesive sheet may not react with environmental ultraviolet rays. The thickness of the separator 4 is usually 10 to 100 μm, preferably about 25 to 50 μm.

<How to use>
Next, the usage method of the adhesive tape 1 of this invention is demonstrated.

  The adhesive tape 1 of the present invention can be used in a method of manufacturing a semiconductor manufacturing apparatus including a step of dividing a wafer 5 on which a modified layer region is formed by stealth dicing into chips 11 and taking out the chips 11 by pick-up. As long as it does, it is not specifically limited. For example, it can be suitably used in the following semiconductor manufacturing apparatus manufacturing methods (A) and (B).

[Manufacturing Method of Semiconductor Manufacturing Equipment (A)]
(A) A step of attaching the surface protection tape 6 to the surface of the wafer 5, aligning the condensing point inside the wafer 5 and irradiating a laser to form the modified region 7 inside the wafer 5, and (b) ) Grinding the back surface of the wafer 5 until it reaches the modified region 7 or near the modified region 7; and (c) a ring for attaching the adhesive tape 1 to the back surface of the wafer 5 and holding the adhesive tape 1. A step of fixing the adhesive tape 1 to the frame 9; (d) a step of peeling the surface protective tape 6 affixed to the surface of the wafer 5; and (e) a chip obtained by expanding the adhesive tape 1 and dividing it in the modified region 7. 11. A method of manufacturing a semiconductor device including a step of picking up 11.

[Manufacturing Method of Semiconductor Manufacturing Equipment (B)]
(A) A step of forming a modified region 7 inside the wafer 5 by applying a surface protection tape 6 to the surface of the wafer 5, aligning the light focusing point inside the wafer 5 and irradiating a laser; and (b) A step of grinding the back surface of the wafer 5 until it reaches the modified region 7 or the vicinity of the modified region 7; and (c) a ring frame 9 for attaching the adhesive tape 1 to the back surface of the wafer 5 and holding the adhesive tape 1. And (d) holding the wafer 5 and the ring frame 9 on a holding stand and applying external stress from the back side of the wafer 5 through the adhesive tape 1 to thereby modify the wafer 5 into a modified region. 7 is divided into units of chips 11, (e) a step of peeling the surface protective tape 6 attached to the surface of the wafer 5, and (f) the adhesive tape 1 is expanded and the chips 11 are picked up. The method of manufacturing a semiconductor device including a degree.

  The usage method of the adhesive tape 1 at the time of applying the adhesive tape 1 to the manufacturing method (A) of the said semiconductor processing apparatus is demonstrated, referring FIGS.

  First, as shown in FIG. 2, a surface protection tape 6 is bonded to the surface of the semiconductor wafer 5 on which the circuit pattern is formed, and a laser beam is irradiated from the back surface side of the wafer 5 with a focusing point inside the wafer 5. As a result, the modified region 7 is formed inside the wafer 5.

  Next, as shown in FIG. 3 (A), as shown in FIG. 3 (B), the modified region 7 is formed by a back grinding process in which the back surface of the wafer 5 on which the modified region 7 is formed is ground with a grindstone 8. Grind until it reaches.

  Next, as shown in FIG. 4, the pressure-sensitive adhesive layer 3 of the pressure-sensitive adhesive tape 1 from which the separator 4 has been peeled is bonded to the back surface of the wafer 5, and the ring frame 9 is bonded to the outer peripheral portion of the pressure-sensitive adhesive layer 3. Then, as shown in FIG. 5, the surface protection tape 6 is peeled off.

  Next, as shown in FIG. 6, the adhesive tape 1 on which the wafer 5 and the ring frame 9 are bonded is placed on the stage (not shown) of the expanding apparatus with the base film 2 side down, and the ring With the frame 9 fixed, the push-up member 10 of the expanding device is raised and the adhesive tape 1 is expanded. Thus, the adhesive tape 1 is stretched in the circumferential direction, so that the wafer 5 is divided in units of chips 11 starting from the modified region 7.

  Then, as shown in FIG. 7, the semiconductor chip 11 can be obtained by a pickup process in which the chip 11 is pushed up from the back surface side of the adhesive tape 1 by the push-up pin 12 and is sucked by the collet 13.

  In the semiconductor device manufacturing method described above, the adhesive tape 1 is expanded to apply an external force to the wafer 5 to divide the wafer 5 into chips 11 starting from the modified region 7. 4 is bonded to the back surface of the wafer 5 and the ring frame 9 is bonded to the outer peripheral portion of the pressure-sensitive adhesive layer 3 and then the surface protective tape 6 is peeled off. As shown in FIG. 8 (A), by sliding the roller 14 from the back surface side of the adhesive tape 1, that is, the base film 2 side, an external force is applied to the wafer 5 and the modified region 7 is used as a starting point. You may make it divide | segment into a chip | tip 11 unit (refer FIG. 8 (B)). Thereafter, in the same manner as in the semiconductor device manufacturing method described above, the surface protective tape 6 is peeled off, the adhesive tape 1 is expanded, the chip 11 is pushed up from the back surface side of the adhesive tape 1 with the push-up pins 12, and the semiconductor chip 11 is removed. Pick up (see FIGS. 6 and 7).

(Example)
Next, the present invention will be described in more detail based on examples. EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples.

[Base film]
As the base film, Hi-Milan AM-7316 (trade name, manufactured by Mitsui DuPont Chemical Co., Ltd.), which is an ethylene-methacrylic acid- (2-methyl-propyl acrylate) terpolymer-Zn ++-ionomer resin, is used. A film having a thickness of 80 μm was prepared. One side of this film was subjected to corona treatment to obtain a base film A.

[Acrylic copolymer]
Using a structural unit derived from ethyl acrylate, butyl acrylate, or 2-ethylhexyl acrylate and a structural unit derived from 2-hydroxypropyl acrylate as raw materials, the composition ratio (parts by weight) shown in Table 1 below is determined. The base polymers A to H containing an acrylic polymer were obtained by performing polymerization so that the hydroxyl value of the polymer became the same.

<Example 1>
2 parts by mass of polypropylene glycol having a molecular weight of 3000 as polypropylene oxide (trade name: polypropylene glycol 3000, manufactured by Junsei Chemical Co., Ltd.) and 6 parts by weight of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a cross-linking agent with respect to 100 parts by mass of the base polymer B The mixture was mixed at a mixing ratio of parts to obtain an adhesive composition.
The obtained adhesive composition was applied to the corona-treated surface of the substrate film A so as to have a thickness of 10 μm, and an adhesive tape according to Example 1 was prepared.

<Example 2>
A pressure-sensitive adhesive tape according to Example 2 was prepared in the same manner as in Example 1 except that polypropylene glycol having a molecular weight of 4000 (trade name: Polypropylene glycol 4000, manufactured by Junsei Chemical Co., Ltd.) was used as the polypropylene oxide.

<Example 3>
Adhesive according to Example 3 in the same manner as in Example 1 except that polypropylene oxide having a molecular weight of 10,000 (trade name: Preminol S4011, manufactured by Asahi Glass Co., Ltd.) was used as the polypropylene oxide, and the addition part was 1.0 part by mass. Created a tape.

<Example 4>
2 parts by mass of polypropylene glycol having a molecular weight of 4000 as polypropylene oxide (trade name: Polypropylene glycol 4000, manufactured by Junsei Chemical Co., Ltd.) and 6 parts by weight of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a cross-linking agent with respect to 100 parts by mass of the base polymer C A pressure-sensitive adhesive tape according to Example 4 was prepared in the same manner as in Example 1 except that the pressure-sensitive adhesive containing part was used.

<Example 5>
2 parts by mass of polypropylene glycol having a molecular weight of 4000 as polypropylene oxide (trade name: Polypropylene glycol 4000, manufactured by Junsei Chemical Co., Ltd.) and 6 parts by weight of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a cross-linking agent with respect to 100 parts by mass of the base polymer F A pressure-sensitive adhesive tape according to Example 5 was prepared in the same manner as in Example 1 except that the pressure-sensitive adhesive containing part was used.

<Example 6>
Adhesive according to Example 6 in the same manner as in Example 5 except that polypropylene oxide having a molecular weight of 10,000 (trade name: Preminol S4011, manufactured by Asahi Glass Co., Ltd.) was used as the polypropylene oxide, and the addition part was 1.0 part by mass. Created a tape.

<Example 7>
2 parts by mass of polypropylene glycol having a molecular weight of 4000 as polypropylene oxide (trade name: Polypropylene glycol 4000, manufactured by Junsei Chemical Co., Ltd.) and 6 parts by weight of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a crosslinking agent with respect to 100 parts by mass of the base polymer G A pressure-sensitive adhesive tape according to Example 7 was prepared in the same manner as in Example 1 except that the pressure-sensitive adhesive containing part was used.

<Comparative Example 1>
Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a crosslinking agent was mixed at a blending ratio of 6 parts by mass with respect to 100 parts by mass of the base polymer A to obtain an adhesive composition.
The obtained adhesive composition was applied to the corona-treated surface of the base film A so as to have a thickness of 10 μm, and a dicing adhesive tape was prepared.

<Comparative Example 2>
A pressure-sensitive adhesive tape according to Comparative Example 2 was prepared in the same manner as Comparative Example 1 except that polypropylene glycol having a molecular weight of 4000 (trade name: Polypropylene glycol 4000, manufactured by Junsei Chemical Co., Ltd.) was used as the polypropylene oxide.

<Comparative Example 3>
2 parts by mass of polypropylene glycol having a molecular weight of 2000 as polypropylene oxide (trade name: Polypropylene glycol 2000, manufactured by Junsei Kagaku Co., Ltd.) and 6 parts by weight of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a crosslinking agent with respect to 100 parts by mass of the base polymer B The adhesive tape which concerns on the comparative example 3 was created like the comparative example 1 except having used the adhesive which contains a part.

<Comparative Example 4>
Comparative Example 4 was made in the same manner as Comparative Example 3 except that polypropylene glycol having a molecular weight of 2000 (trade name: Polypropylene glycol 2000, manufactured by Junsei Chemical Co., Ltd.) was used as the polypropylene oxide, and the number of added parts was 5.0 parts by mass. Such an adhesive tape was prepared.

<Comparative Example 5>
2 parts by mass of polypropylene glycol having a molecular weight of 4000 as polypropylene oxide (trade name: Polypropylene glycol 4000, manufactured by Junsei Chemical Co., Ltd.) and 6 parts by weight of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a crosslinking agent with respect to 100 parts by mass of the base polymer D The adhesive tape which concerns on the comparative example 5 was created like the comparative example 1 except having used the adhesive which contains a part.

<Comparative Example 6>
1.0 part by weight of polypropylene glycol (trade name: Preminol S4011, manufactured by Asahi Glass Co., Ltd.) having a molecular weight of 10,000 as polypropylene oxide, and 6 parts by weight of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a crosslinking agent with respect to 100 parts by weight of the base polymer E The adhesive tape which concerns on the comparative example 6 was created like the comparative example 1 except having used the adhesive which contains a part.

<Comparative Example 7>
A pressure-sensitive adhesive tape according to Comparative Example 7 was prepared in the same manner as Comparative Example 1 except that a pressure-sensitive adhesive containing 6 parts by mass of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) was used as a crosslinking agent with respect to 100 parts by mass of the base polymer F. .

<Comparative Example 8>
2 parts by mass of polypropylene glycol having a molecular weight of 2000 as polypropylene oxide (trade name: Polypropylene glycol 2000, manufactured by Pure Chemical Co., Ltd.) and 6 parts by weight of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as a cross-linking agent with respect to 100 parts by mass of the base polymer F The adhesive tape which concerns on the comparative example 8 was created like the comparative example 1 except having used the adhesive which contains a part.

<Comparative Example 9>
Adhesive according to Comparative Example 9 is the same as Comparative Example 8 except that polypropylene oxide having a molecular weight of 10,000 (trade name: Preminol S4011, manufactured by Asahi Glass Co., Ltd.) is used as the polypropylene oxide, and the addition part is 6.0 parts by mass. Created a tape.

<Comparative Example 10>
A pressure-sensitive adhesive tape according to Comparative Example 10 was prepared in the same manner as Comparative Example 1 except that a pressure-sensitive adhesive containing 6 parts by mass of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) was used as a crosslinking agent with respect to 100 parts by mass of the base polymer H. .

<Comparative Example 11>
A pressure-sensitive adhesive tape according to Comparative Example 11 was prepared in the same manner as Comparative Example 10 except that polypropylene glycol having a molecular weight of 4000 (trade name: Polypropylene glycol 4000, manufactured by Junsei Chemical Co., Ltd.) was used as the polypropylene oxide.

  The following evaluation was performed about the adhesive tape obtained by the said Example and comparative example. The evaluation results for the examples are shown in Table 2, and the evaluation results for the comparative examples are shown in Table 3.

[Test 1: Silicon mirror surface peeling force measurement]
Three test pieces each having a width of 25 mm and a length of 300 mm were collected from the adhesive tape according to each of the examples and comparative examples, and bonded to a silicon mirror wafer. After standing, the adhesive strength was measured using a tensile tester conforming to JIS B 7721 whose measured value was in the range of 15 to 85% of its capacity. The measurement was performed by a 180 ° peeling method, and the tensile speed at this time was 300 mm / min. The measurement temperature was 23 ° C. and the measurement humidity was 50%.

[Test 2: SUS surface peeling force measurement]
Three specimens each having a width of 25 mm and a length of 300 mm were collected from the adhesive tape according to each of Examples and Comparative Examples, and the thickness specified in JIS G 4305 was finished with 280th water resistant abrasive paper specified in JIS R 6253. After sticking on a SUS304 steel plate with a thickness of 1.5 mm to 2.0 mm, a 2 kg rubber roller is pressure-bonded over 3 reciprocations, and after standing for 1 hour, the measured value falls within the range of 15 to 85% of its capacity. Adhesive strength was measured using a tensile tester conforming to 7721. The measurement was performed by a 180 ° peeling method, and the tensile speed at this time was 300 mm / min. The measurement temperature was 23 ° C. and the measurement humidity was 50%.

[Evaluation 1: Pickup evaluation]
After a surface protective tape is bonded to a silicon wafer having a thickness of 725 μm and a diameter of 300 mm, a modified region is formed inside the wafer by using a laser dicing apparatus (trade name: ML300, manufactured by Tokyo Seimitsu Co., Ltd.). The wafer on which the region has been formed is ground to a thickness of 100 μm and a chip size of 10 mm × 10 mm by using a grinder device (trade name: PG3000RM, manufactured by Tokyo Seimitsu Co., Ltd.) until it reaches the modified region. It was cut into pieces.
Furthermore, after sticking the adhesive tape which concerns on an Example and a comparative example on the grinding | polishing surface side of the said wafer, and fixing to a ring frame, the surface protection tape is peeled off, and a die picker apparatus (The product name: CAP- The pick-up test according to 300II) was performed.

The pickup conditions are as follows.
Push-up pin shape: radius 0.7 mm, tip curvature radius R = 0.25 mm, tip θ = 15
Pin push-up height: 600 μm
Pin push-up speed: 50mm / sec
Collet shape: Suction hole 0.89mmφ
Expandable expansion amount: 10mm
Ring frame: Model DTF-2-6-1 manufactured by DISCO (manufactured by SUS420J2)

  50 chips separated under the above conditions were picked up, and the success or failure of the pick-up was confirmed. The evaluation was “◯” for all the chips that could be taken out, and “X” for the case where even one chip remained on the adhesive tape and could not be taken out.

[Evaluation 2: Ring frame peelability evaluation]
About the adhesive tape which concerns on the Example and comparative example after pick-up property evaluation by the said evaluation 1, the presence or absence of peeling from a ring frame was confirmed. “○” indicates that the adhesive tape has not been peeled off from the ring frame, “△” indicates that less than 1/4 of the part of the adhesive tape that has been bonded to the ring frame is “△”, and the adhesive tape is bonded to the ring frame. What peeled 1/4 or more of the part currently peeled was evaluated as "x".

[Evaluation 3: Chip dispersibility evaluation]
When the pickup property evaluation was performed in Test 3, the presence or absence of chip scattering around the pickup location was visually confirmed. Evaluation was made as “◯” when the chip arrangement around the pickup location was not disturbed or scattered, and “X” when the chip arrangement was disturbed or when the chip was scattered outside the adhesive tape.

  As shown in Table 2, the peeling force with the silicon mirror surface at a peeling angle of 180 degrees and a peeling speed of 300 mm / min under the conditions of 23 ° C. and 50% RH is 0.1 to 0.4 N / 25 mm. In the conditions of 23 ° C. and 50% RH, the peeling force with the SUS304 surface at a peeling angle of 180 degrees and a peeling speed of 300 mm / min is 0.4 to 0.8 N / 25 mm. It was possible to easily take out the chip from the adhesive tape without causing the peripheral chips other than the push-up chip to be scattered. Furthermore, the adhesive tape did not peel off from the ring frame in the expand during the pickup process.

  On the other hand, at 23 ° C. and 50% RH, at a peeling angle of 180 degrees and at a peeling speed of 300 mm / min, the peeling force with the silicon mirror surface exceeded 0.4 N / 25 mm, and under the conditions of 23 ° C. and 50% RH, In Comparative Examples 1, 2, 3, and 6, in which the peeling force with the SUS304 surface exceeds 0.8 N / 25 mm at a peeling angle of 180 degrees and a peeling speed of 300 mm / min, the tape peeling from the ring frame is not seen. There was a chip that remained on the adhesive tape at the time of pick-up and could not be taken out, resulting in poor pick-up performance.

  About Comparative Examples 1 and 2, since the (meth) acrylic acid alkyl ester monomer having an alkyl group with less than 4 carbon atoms is used, the polarity of the base polymer is high, and the adhesion to the silicon wafer is excessive. it is conceivable that. Moreover, about the comparative example 3, since the number average molecular weight of the polypropylene oxide in an adhesive is less than 3000 and molecular weight is low, it is considered because sufficient release effect could not be acquired. In Comparative Example 6, the alkyl group having a carbon number of 4 or more (meth) acrylic acid alkyl ester monomer is less than 70%, 2-hydroxypropyl acrylate is more than 30%, and the hydroxyl value is more than 100 mgKOH / g. For this reason, it is considered that the polarity of the base polymer is high and the adhesiveness with the silicon wafer becomes excessive.

  Moreover, although the peeling force with the SUS304 surface at a peeling angle of 180 degrees and a peeling speed of 300 mm / min is 0.4 to 0.8 N / 25 mm, the peeling angle is 180 degrees under the conditions of 23 ° C. and 50% RH. In Comparative Examples 4, 7, and 8 where the peeling force from the silicon mirror surface exceeds 0.4 N / 25 mm at a peeling speed of 300 mm / min, the tape is not peeled off from the ring frame. However, there was a chip that could not be taken out and was inferior in pick-up property.

  In Comparative Examples 4 and 8, the number average molecular weight of the polypropylene oxide in the pressure-sensitive adhesive is less than 3000, and it is considered that a sufficient release effect could not be obtained due to the low molecular weight. Moreover, about the comparative example 7, since the polypropylene oxide was not contained in the adhesive, it is thought that the mold release effect was not able to be acquired.

  In addition, Comparative Example 9 having a peeling force of less than 0.1 N / 25 mm at 23 ° C. and 50% RH at a peeling angle of 180 degrees and a peeling speed of 300 mm / min is less than 0.1 N / 25 mm. The chip could be easily peeled off, but the chip other than the pin push-up part was also peeled off, resulting in chip breakage. In addition, Comparative Examples 5 and 10 having a peeling force of less than 0.4 N / 25 mm at 23 ° C. and 50% RH at a peeling angle of 180 degrees and a peeling speed of 300 mm / min are less than 0.4 N / 25 mm. The chip could be easily peeled off, but part of the adhesive tape peeled off from the ring frame. In Comparative Example 11, there were many peeled portions of the adhesive tape from the ring frame, and the adhesive tape could not be expanded and picked up.

  In Comparative Example 9, it is considered that the compounding amount of polypropylene oxide was large and the release effect was excessive. For Comparative Examples 5, 10, and 11, (meth) acrylic acid alkyl ester monomer having 4 or more carbon atoms in the alkyl group exceeds 90%, 2-hydroxypropyl acrylate is less than 10%, and the hydroxyl value is 45 mgKOH / Since it is less than g, it is thought that the polarity of the base polymer is low and the adhesion to the ring frame is insufficient.

1: Adhesive tape 2: Base film 3: Adhesive layer 4: Separator 5: Wafer 6: Surface protection tape 7: Modified region 8: Grinding wheel 9: Ring frame 11: Chip

Claims (7)

To pick up the chips divided into chips in the modified region after forming a modified region inside the wafer by irradiating a laser with a focusing point inside the wafer with a circuit pattern formed on the surface An adhesive tape used,
It is a radiation non-curing type that does not cure when irradiated with radiation,
Under the conditions of 23 ° C. and 50% RH, the peel force with the silicon mirror surface at a peel angle of 180 degrees and a peel speed of 300 mm / min is 0.1 to 0.4 N / 25 mm,
A pressure-sensitive adhesive tape having a peeling force of 0.4 to 0.8 N / 25 mm with respect to a SUS304 surface at a peeling angle of 180 degrees and a peeling speed of 300 mm / min under the conditions of 23 ° C. and 50% RH. An adhesive layer is formed on the base film,
The pressure-sensitive adhesive layer has a hydroxyl value composed of 70 to 90% by mass of a (meth) acrylic acid alkyl ester monomer having an alkyl group having 4 or more carbon atoms and 10 to 30% by mass of 2-hydroxypropyl acrylate. The pressure-sensitive adhesive tape according to claim 1, comprising an acrylic copolymer of 45 to 100 and polypropylene oxide having a number average molecular weight of 3000 to 10,000, and is crosslinked using an isocyanate crosslinking agent. .   (A) attaching a surface protection tape to the surface of the wafer, aligning a condensing point inside the wafer and irradiating a laser to form the modified region inside the wafer; and (b) the above Grinding the back surface of the wafer until reaching the modified region or the vicinity of the modified region, and (c) attaching the adhesive tape to the back surface of the wafer, and a ring frame for holding the adhesive tape A step of fixing the adhesive tape; (d) a step of peeling off the surface protection tape affixed to the surface of the wafer; and (e) an expansion of the adhesive tape and picking up the chips divided in the modified region. The pressure-sensitive adhesive tape according to claim 1, wherein the pressure-sensitive adhesive tape is used in a method for manufacturing a semiconductor device including a process. (A) attaching a surface protection tape to the surface of the wafer, aligning a condensing point inside the wafer and irradiating a laser to form the modified region inside the wafer; and (b) the above Grinding the back surface of the wafer until reaching the modified region or near the modified region; and (c) applying the adhesive tape to the back surface of the wafer and attaching the adhesive to a ring frame for holding the adhesive tape. A step of fixing the tape; and (d) holding the wafer and the ring frame on a holding table and applying external stress from the back side of the wafer via the adhesive tape, thereby causing the wafer to follow the modified region. A step of dividing the wafer into chips, (e) a step of peeling off the surface protection tape attached to the surface of the wafer, and (f) expanding the adhesive tape, Pressure-sensitive adhesive tape according to claim 1 or claim 2, characterized by using the serial chip to a method of manufacturing a semiconductor device comprising the steps of picking up. (A) U and affixed to the surface protection tape on the surface of E c, by irradiating the laser while locating a converging point within the wafer, and forming a modified region within the wafer, (b) the a step of grinding the back surface of the wafer until it reaches the vicinity of the modified region or the modified region, the sticking a pressure-sensitive adhesive tape on the back surface of the (c) the wafer, to a ring frame for holding the adhesive tape A step of fixing the adhesive tape; (d) a step of peeling off the surface protection tape affixed to the surface of the wafer; and (e) an expansion of the adhesive tape and picking up the chips divided in the modified region. A method of manufacturing a semiconductor device including a process,
The pressure-sensitive adhesive tape is a radiation non-curing type that is not cured by irradiation with radiation, and has a peeling force of 0 from a silicon mirror surface at a peeling angle of 180 degrees and a peeling speed of 300 mm / min under conditions of 23 ° C. and 50% RH. 0.1 to 0.4 N / 25 mm, and the peel strength with respect to the SUS304 surface at a peel angle of 180 degrees and a peel speed of 300 mm / min under conditions of 23 ° C. and 50% RH is 0.4 to 0.8 N / 25 mm. A method for manufacturing a semiconductor device, wherein: (A) U and affixed to the surface protection tape on the surface of E c, by irradiating the laser while locating a converging point within the wafer, and forming a modified region within the wafer, (b) the a step of grinding the wafer back surface to reach the vicinity of the modified region or the modified region, the sticking a pressure-sensitive adhesive tape on the back surface of the (c) said wafer, said adhesive to a ring frame for holding the adhesive tape A step of fixing the tape; and (d) holding the wafer and the ring frame on a holding table and applying external stress from the back side of the wafer via the adhesive tape, thereby causing the wafer to follow the modified region. Dividing the chip into units, (e) peeling the surface protection tape affixed to the surface of the wafer, and (f) expanding the adhesive tape, A method of manufacturing a semiconductor device including the step of Kkuappu,
The pressure-sensitive adhesive tape is a radiation non-curing type that is not cured by irradiation with radiation, and has a peeling force of 0 from a silicon mirror surface at a peeling angle of 180 degrees and a peeling speed of 300 mm / min under conditions of 23 ° C. and 50% RH. 0.1 to 0.4 N / 25 mm, and the peel strength with respect to the SUS304 surface at a peel angle of 180 degrees and a peel speed of 300 mm / min under conditions of 23 ° C. and 50% RH is 0.4 to 0.8 N / 25 mm. A method for manufacturing a semiconductor device, wherein: In the pressure-sensitive adhesive tape, a pressure-sensitive adhesive layer is formed on a base film, and the pressure-sensitive adhesive layer has 70 to 90% by mass of a (meth) acrylic acid alkyl ester monomer having an alkyl group having 4 or more carbon atoms, An isocyanate-based cross-linking agent comprising an acrylic copolymer having a hydroxyl value of 45 to 100 constituted by 10 to 30% by mass of 2-hydroxypropyl acrylate and a polypropylene oxide having a number average molecular weight of 3000 to 10,000. The method of manufacturing a semiconductor device according to claim 5, wherein the semiconductor device is crosslinked by using.

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