JP5893917B2 - Resin sheet for electronic parts, method for producing resin sheet for electronic parts, and method for producing semiconductor device - Google Patents

Description

  The present invention relates to a resin sheet for electronic parts, a method for producing a resin sheet for electronic parts, and a method for producing a semiconductor device.

  In recent years, semiconductor packages and electronic component modules have become smaller, higher density, and higher performance, and noise and heat problems generated from devices have become prominent. Under such circumstances, in the manufacturing process of a semiconductor package or the like, after a device is sealed with a resin, there is an increase in the number of cases in which a metal film is formed on the sealing resin in order to ensure electromagnetic shielding and heat dissipation. ing.

  In forming a metal film on the sealing resin, electroless copper plating is often used. In this electroless plating process, first, pretreatment such as cleaning and roughening of the surface to be plated is performed, and then a metal nucleus serving as a catalyst for plating is formed on the resin, and then electroless copper plating is performed. (See, for example, Non-Patent Document 1 and Patent Document 1).

"Plating book, Electric plating study group", Nikkan Kogyo Shimbun, P207-218, P233-243 (1986. 9)

JP 2011-77430 A

  However, in the above method, in order to perform electroless copper plating after performing a pretreatment step such as cleaning and roughening of the surface to be plated and a step of forming a metal nucleus serving as a plating catalyst on the resin, There was a problem that there were many processes.

  The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a resin sheet for electronic parts capable of easily forming an electroless plating layer and a method for producing the resin sheet for electronic parts. There is to do.

  In order to solve the conventional problems, the inventors of the present application have studied a resin sheet for electronic parts and a method for producing the resin sheet for electronic parts. As a result, the inventors have found that it is possible to easily form an electroless plating layer by adopting the following configuration, and have completed the present invention.

  That is, the resin sheet for electronic parts according to the present invention has a thermosetting resin film and a release film, and a catalyst layer used in an electroless plating method between the thermosetting resin film and the release film. Is provided.

  According to the said structure, since there is a catalyst layer used for the electroless plating method between the thermosetting resin film and the release film, if the release film is peeled off, a pretreatment step such as roughening or a resin The electroless plating layer can be formed without performing a step of forming a metal nucleus serving as a plating catalyst on the top. Therefore, an electroless plating layer can be easily formed.

  The said structure WHEREIN: It is preferable that the contact angle with the water of the said peeling film is 90 degrees or less. When the contact angle of the release film with water is 90 degrees or less, the catalyst layer is favorably formed between the thermosetting resin film and the release film. In particular, when a release film is immersed in a catalyst-containing solution to form a catalyst layer on the release film, and a thermosetting resin film is bonded to the surface on which the catalyst layer is formed to produce a resin sheet for electronic parts When the contact angle of the release film with water is 90 degrees or less, the catalyst-containing solution adheres well to the release film. Therefore, the catalyst layer can be more reliably formed on the release film.

  The said structure WHEREIN: It is preferable that the said catalyst layer contains a palladium catalyst. When the catalyst layer contains a palladium catalyst, it is preferable in that a uniform and high-quality plating film can be obtained.

  The method for producing a resin sheet for electronic parts according to the present invention includes a step of forming a catalyst layer used for an electroless plating method on a release film, and a thermosetting resin film on the surface on which the catalyst layer is formed. And a step of obtaining a resin sheet for electronic parts in which a release film, a catalyst layer, and a thermosetting resin film are laminated in this order.

  According to the said structure, the catalyst layer used for an electroless-plating method is formed between a thermosetting resin film and a peeling film. Therefore, according to the resin sheet for electronic parts manufactured by the method, as long as the release film is peeled off, a pretreatment step such as roughening, a step of forming a metal nucleus serving as a catalyst for plating on the resin, etc. An electroless plating layer can be formed without performing this. Therefore, an electroless plating layer can be easily formed. In addition, a catalyst layer is formed on the release film, and a thermosetting resin film is bonded to the surface on which the catalyst layer is formed to obtain a resin sheet for electronic parts. Therefore, the catalyst is directly formed on the thermosetting resin film. It is superior in that the contamination of the chemical tank due to the resin composition or the like during formation of the catalyst layer can be reduced rather than forming the layer.

  In the said structure, it is preferable that the contact angle with the water of the said peeling film is 90 degrees or less. When the contact angle of the release film with water is 90 degrees or less, the catalyst layer is favorably formed between the thermosetting resin film and the release film. In particular, when a release film is immersed in a catalyst-containing solution to form a catalyst layer on the release film, the catalyst-containing solution adheres well to the release film when the contact angle of the release film with water is 90 degrees or less. To do. Therefore, the catalyst layer can be more reliably formed on the release film.

  The said structure WHEREIN: It is preferable that the said catalyst layer contains a palladium catalyst. When the catalyst layer contains a palladium catalyst, it is preferable in that a uniform and high-quality plating film can be obtained.

  Moreover, the method for manufacturing a semiconductor device according to the present invention includes a step of preparing the resin sheet for electronic components, a step of molding the resin sheet for electronic components, and heating the resin sheet for electronic components after molding, The step of thermosetting the thermosetting resin film, the step of thermosetting the thermosetting resin film and then peeling the release film, and forming the electroless plating layer on the catalyst layer by electroless plating And a step of performing.

  According to the said structure, a semiconductor device is manufactured using the resin sheet for electronic components in which the catalyst layer used for the electroless-plating method is provided between the thermosetting resin film and the peeling film. Since the catalyst layer used in the electroless plating method is provided between the thermosetting resin film and the release film, if the release film is peeled off, pretreatment steps such as roughening and plating on the resin An electroless plating layer can be formed without performing a step of forming metal nuclei serving as a catalyst for the above. Therefore, an electroless plating layer can be easily formed.

It is a cross-sectional schematic diagram of the resin sheet for electronic components which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the resin sheet for electronic components shown in FIG. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the resin sheet for electronic components shown in FIG. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the resin sheet for electronic components shown in FIG. It is a cross-sectional schematic diagram for demonstrating an example of the manufacturing method of the semiconductor device using the resin sheet for electronic components shown in FIG. It is a cross-sectional schematic diagram for demonstrating an example of the manufacturing method of the semiconductor device using the resin sheet for electronic components shown in FIG. It is a cross-sectional schematic diagram for demonstrating an example of the manufacturing method of the semiconductor device using the resin sheet for electronic components shown in FIG. It is a cross-sectional schematic diagram for demonstrating an example of the manufacturing method of the semiconductor device using the resin sheet for electronic components shown in FIG.

(Resin sheet for electronic parts)
First, the resin sheet for electronic components which concerns on one Embodiment of this invention is demonstrated below. FIG. 1 is a schematic cross-sectional view of a resin sheet for electronic parts according to an embodiment of the present invention. As shown in FIG. 1, the electronic component resin sheet 10 includes a thermosetting resin film 12 and a release film 16, and an electroless plating method is provided between the thermosetting resin film 12 and the release film 16. A catalyst layer 14 to be used is provided.

  The catalyst layer 14 has a catalyst nucleus for inducing precipitation of the electroless plating layer 19 (see FIG. 8) in the electroless plating solution. As the catalyst constituting the catalyst nucleus, for example, at least one of palladium, silver, and gold can be used.

  The catalyst layer 14 may contain components other than the catalyst, and may contain, for example, tin as a component derived from the catalyst solution.

The thickness of the catalyst layer 14 is not particularly limited, but when the catalyst layer 14 contains a palladium catalyst, it is preferable that the palladium adsorption amount is 0.1 to 10 μg / cm ^2. preferably from 0.5-5 microgram / cm ^2. By setting the thickness of the catalyst layer 14 within the above range, a uniform plating film (catalyst layer 14) can be obtained. The amount of palladium adsorbed can be analyzed by ICP emission spectroscopic analysis after being dissolved in a 1: 3 mixture of concentrated nitric acid and concentrated hydrochloric acid.

  The contact angle of the release film 16 with water on the side facing the thermosetting resin film 12 is preferably 90 degrees or less, and more preferably 75 degrees or less. Moreover, although the said contact angle is so preferable that it is small, it is 15 degree | times or more, for example, More preferably, it is 30 degree | times or more. When the contact angle with water on the surface of the release film 16 facing the thermosetting resin film 12 is 90 degrees or less, the catalyst layer 14 is excellently disposed between the thermosetting resin film 12 and the release film 16. It is formed. In particular, the release film 16 is immersed in a catalyst-containing solution to form the catalyst layer 14 on the release film 16, and the thermosetting resin film 12 is bonded to the surface on which the catalyst layer 14 is formed, to thereby form a resin sheet for electronic components. 10 is produced, the catalyst-containing solution adheres well to the release film 16 when the contact angle of the release film 16 with the water on the surface facing the thermosetting resin film 12 is 90 degrees or less. Therefore, the catalyst layer 14 can be more reliably formed on the release film 16. The contact angle can be controlled by surface treatment such as release agent treatment or physical treatment of the release film.

  The release film 16 has a function as a protective material that protects the catalyst layer 14 and the thermosetting resin film 12 until practical use. The release film 16 is peeled off when the electroless plating layer 19 (see FIG. 8) is formed on the catalyst layer 14. Examples of the release film 16 include plastic films such as polyethylene terephthalate (PET), polyethylene, and polypropylene, and paper. These plastic films and papers may be surface-coated with a release agent such as a fluorine-type release agent, a silicone release agent, or a long-chain alkyl acrylate release agent. However, when the surface is coated, it is preferable that the contact angle between the release film 16 and the water on the side facing the thermosetting resin film 12 is 90 degrees or less.

  The thickness of the release film 16 is not particularly limited, and is preferably in the range of 15 to 150 μm, for example, and more preferably in the range of 25 to 75 μm.

  The thermosetting resin film 12 has a function of sealing an electronic component such as a semiconductor chip. Examples of the constituent material of the thermosetting resin film 12 include those in which a thermoplastic resin and a thermosetting resin are used in combination. A thermosetting resin alone can also be used.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor chip is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, dodecyl group and the like.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities that corrode the semiconductor chip is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.

  Moreover, an inorganic filler can be appropriately blended in the thermosetting resin film 12. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the storage elastic modulus, and the like.

  Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. And various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbons. These can be used alone or in combination of two or more. Among these, silica, particularly fused silica is preferably used.

  The average particle size of the inorganic filler is preferably in the range of 0.1 to 30 μm, and more preferably in the range of 0.5 to 25 μm. In the present invention, inorganic fillers having different average particle sizes may be used in combination. The average particle size is a value determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

  The blending amount of the inorganic filler is preferably set to 100 to 1400 parts by weight with respect to 100 parts by weight of the organic resin component. Particularly preferred is 230 to 900 parts by weight. When the blending amount of the inorganic filler is 100 parts by weight or more, heat resistance and strength are improved. Moreover, fluidity | liquidity is securable by setting it as 1400 weight part or less. Thereby, it can prevent that adhesiveness and embedding fall.

  In addition to the said inorganic filler, another additive can be suitably mix | blended with the thermosetting resin film 12 as needed. Examples of other additives include a flame retardant, a silane coupling agent, an ion trap agent, a release agent, and a plasticizer. As the flame retardant, various known flame retardant components can be used. From the viewpoint of reducing the environmental burden, metal hydroxides such as magnesium hydroxide and aluminum hydroxide, organic phosphorus compounds such as phosphate compounds and phosphazenes are used. It is preferable to use a system compound or the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more. As the release agent, various conventionally used release agents such as silicone release agents and long-chain alkyl release agents can be appropriately selected and used. Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, acrylic resins, and epoxy diluents.

The viscosity of the thermosetting resin film 12 is preferably 100 Pa · s to 10000 Pa · s at the molding temperature, and more preferably 800 Pa · s to 3000 Pa · s. Although the said molding temperature can be suitably set according to the composition of the thermosetting resin film 12, etc., it is 40-180 degreeC, for example, More preferably, it is 80-150 degreeC.
The thickness of the thermosetting resin film 12 (total thickness in the case of multiple layers) is not particularly limited, but is preferably 100 μm or more and 1000 μm or less in consideration of the embedding property of electronic parts. In addition, the thickness of the thermosetting resin film 12 can be appropriately set in consideration of the thickness of the electronic component.

  In the electronic component resin sheet 10, a cover film (not shown) may be provided on the surface of the thermosetting resin film 12 opposite to the side on which the release film 16 is provided. As said cover film, the thing similar to the peeling film 16 can be used, for example.

  In the embodiment described above, the case where the resin sheet for electronic parts is composed of the thermosetting resin film 12, the release film 16, and the catalyst layer 14 has been described. However, the resin sheet for electronic parts in the present invention is not limited to this example, and may have other layers.

(Manufacturing method of resin sheet for electronic parts)
Next, one manufacturing method of the resin sheet 10 for electronic components is demonstrated. 2-4 is a cross-sectional schematic diagram for demonstrating one manufacturing method of the resin sheet for electronic components. The method for producing a resin sheet for electronic parts according to the present embodiment includes a step of forming a catalyst layer 14 used for an electroless plating method on a release film 16 and a thermosetting resin on the surface on which the catalyst layer 14 is formed. The film 12 is bonded, and at least a step of obtaining a resin sheet 10 for electronic parts in which the release film 16, the catalyst layer 14, and the thermosetting resin film 12 are laminated in this order is provided.

  Examples of the method for forming the release film 16 include a calendering method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Examples of the method for forming the catalyst layer 14 include a method of immersing the release film 16 in the catalyst layer forming solution 18 (see FIG. 2). Thereby, the peeling film 16 with the catalyst layer 14 is obtained (refer FIG. 3). Examples of the catalyst layer forming solution 18 include a tin-palladium colloidal solution and a palladium ion complex solution. As immersion time, 1 to 15 minutes are preferable and 2 to 8 minutes are more preferable. Moreover, 20-70 degreeC is preferable and, as for the temperature of the solution 18 for catalyst layer formation at the time of immersion, 30-60 degreeC is more preferable. In addition, after immersing the release film 16 in the catalyst layer forming solution 18 to form the catalyst layer 14, it is preferable that the release film 16 with the catalyst layer 14 is washed with water and dried. The washing condition can be 3 to 10 minutes with pure water. Moreover, as drying conditions, it can be set as 5 to 10 minutes at 70-130 degreeC.

  On the other hand, a thermosetting resin film 12 is prepared. The step of forming the thermosetting resin film 12 can be obtained by kneading and extruding the constituent material of the thermosetting resin film 12.

  Subsequently, the thermosetting resin film 12 is transferred to the surface of the release film 16 with the catalyst layer 14 on which the catalyst layer 14 is formed (see FIG. 4). The transfer can be performed by pressure bonding. The bonding temperature is preferably 40 to 80 ° C, more preferably 50 to 70 ° C. Further, the laminating pressure is preferably 0.1 to 0.6 MPa, more preferably 0.2 to 0.5 MPa. Thereby, the resin sheet 10 for electronic components is obtained.

  In the above-described method for producing a resin sheet for electronic parts, the case where a thermosetting resin film is produced by extrusion molding has been described. However, in the present invention, the production of the thermosetting resin film is not limited to this example. For example, the adhesive composition solution that is a constituent material of the thermosetting resin film is applied on the release film and applied. You may manufacture by performing the process of forming a layer, and drying the said coating layer after that.

  In the manufacturing method of the resin sheet for electronic parts mentioned above, the case where a release film with a catalyst layer was produced and bonded to a thermosetting resin film was described. However, the manufacturing method of the resin sheet for electronic components in the present invention is not limited to this example. For example, after manufacturing a thermosetting resin film, the thermosetting resin film is immersed in a catalyst layer forming solution to form a catalyst layer on the thermosetting resin film, and then a release film is formed on the catalyst layer. It is good also as sticking together.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device using a resin sheet for electronic components will be described. 5 to 8 are schematic cross-sectional views for explaining an example of a method for manufacturing a semiconductor device using a resin sheet for electronic components. The manufacturing method of the resin sheet for electronic components according to the present embodiment includes a step of preparing the resin sheet for electronic components described above, a step of molding the resin sheet for electronic components, and the resin for electronic components after molding. A step of heating the sheet to thermally cure the thermosetting resin film, a step of thermally curing the thermosetting resin film, and then peeling the release film, and an electroless plating method to remove the catalyst layer. And a step of forming an electrolytic plating layer.

  First, the resin sheet 10 for electronic components described above is prepared.

  Next, the electronic component resin sheet 10 is molded. Specifically, the electronic component resin sheet 10 is pressed against the substrate 40 on which the semiconductor chip 42 is provided so that the thermosetting resin film 12 is opposed to the semiconductor chip 42, and the semiconductor chip 42 is pressed against the thermosetting resin film 12. It is molded so as to be embedded (see FIG. 5). Thereby, the semiconductor chip 42 is sealed with the thermosetting resin film 12 (see FIG. 6). The embedding can be performed by applying pressure from both sides of the resin sheet 10 for electronic parts using a press molding machine or a roll molding machine. As a result, the semiconductor chip 42 can be sealed with the thermosetting resin film 12 (see FIG. 6). The embedding temperature is preferably 60 to 150 ° C, more preferably 80 to 120 ° C. The embedding pressure is preferably 0.02 to 3 MPa, more preferably 0.05 to 1 MPa.

  Next, the molded electronic component resin sheet 10 is heated to thermally cure the thermosetting resin film 12. The heating temperature in the thermosetting step is preferably 90 to 200 ° C, more preferably 120 to 175 ° C. The heating time is preferably 30 to 240 minutes, and more preferably 60 to 180 minutes.

  After the thermosetting resin film 12 is thermally cured, the release film 16 is then released (see FIG. 7). Peeling can be performed using a conventionally known peeling device.

  Next, the electroless plating layer 19 is formed on the catalyst layer by an electroless plating method. Specifically, the substrate 40 provided with the semiconductor chip 42, and a laminate in which the thermosetting resin film 12 and the catalyst layer 14 are laminated is immersed in an electroless plating solution. The composition of the electroless plating solution can be set in accordance with the electroless plating layer 19 to be formed, and examples thereof include copper sulfate hydrate and EDTA (ethylenediamine tetraacetate as a main component). The immersion time in the electroless plating solution can be set according to the thickness of the electroless plating layer 19 to be formed, for example, in the case of forming the electroless plating layer 19 having a film thickness (0.5 μm). The immersion time in the electroless plating solution can be about 250 to 350 seconds, whereby the electroless plating layer 19 can be formed on the catalyst layer 14 (see FIG. 8).

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the gist of the present invention only to those unless otherwise limited. In the following, “parts” means parts by weight.

Example 1
<Preparation of thermosetting resin film>
The following (a) to (f) were kneaded and extruded at 120 ° C. for 5 minutes with a biaxial kneader to obtain a thermosetting resin film A having a thickness of 0.7 μm.
(A) Epoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., YSLV-80XY) 286 parts (b) Phenolic resin (Maywa Kasei Co., Ltd., MEH-7851-SS) 303 parts (c) Curing accelerator (manufactured by Shikoku Kasei Kogyo Co., Ltd.) 2PHZ) 6 parts (d) Silica filler (manufactured by Denki Kagaku Kogyo Co., Ltd., FB-9454-FC) 3695 parts (e) Silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403) 5 parts (f) Filler Carbon (Mitsubishi Chemical Co., # 20) 5 parts

<Preparation of release film with Pd nucleus>
A PET film (MRF-50 manufactured by Mitsubishi Chemical Corporation, thickness 50 μm, silicone-treated product on one side only) was prepared as a release film. Next, the PET film was placed in a tin-palladium colloid solution (pure water, a mixture of CATAPREP 404 and CATAPOSIT 44 manufactured by Rohm and Haas, a mixing ratio of 86: 10: 4) at 45 ° C. for 4 minutes. Soaked. Then, it washed with water at normal temperature (23 degreeC). Thus, a release film A with a Pd nucleus in which a Pd (palladium) nucleus was formed on the non-silicone-treated surface side of the PET film was obtained.

<Preparation of resin sheet for electronic parts>
The non-silicone-treated surface of the Pd-nucleated PET film was bonded to the thermosetting resin film A produced above. Also, as the cover film A, a PET film (MRF-50 manufactured by Mitsubishi Chemical Co., Ltd., thickness 50 μm, silicone-treated product on one side only) without a catalyst core is prepared, and a PET film with a Pd core of the thermosetting resin film A is prepared. Cover film A was bonded to the surface that was not bonded. Thereby, the resin sheet A for electronic components which concerns on the present Example 1 was obtained.

(Example 2)
<Preparation of release film with Pd nucleus>
A release film B with a Pd nucleus was obtained in the same manner as in Example 1 except that a polymethylpentene film (Mitsui Chemicals, Opulan X-88BMT4, thickness 50 μm) was used as the release film.

<Preparation of resin sheet for electronic parts>
A resin sheet B for electronic parts according to Example 2 was obtained in the same manner as Example 1 except that the Pd nucleus release film B was used.

(Example 3)
<Preparation of resin sheet for electronic parts>
The thermosetting resin film A is immersed in a tin-palladium colloid solution (pure water, a mixture of CATAPREP 404 and CATAPOSIT 44 manufactured by Rohm and Haas, mixing ratio is 86: 10: 4) at 45 ° C. for 4 minutes. I let you. Then, it washed with water at normal temperature (23 degreeC).

  Next, the non-silicone-treated surface of a PET film (MRF-50 manufactured by Mitsubishi Chemical Corporation, thickness 50 μm, silicone-treated product on one side only) prepared as the release film C was bonded to the thermosetting resin film A. In addition, on the surface of the thermosetting resin film A on which the release film C was not bonded, the silicone-treated surface of a PET film (MRF-50 manufactured by Mitsubishi Chemical, thickness 50 μm, silicone-treated product on one side only) prepared as the cover film C Were pasted together. Thereby, the resin sheet C for electronic components which concerns on the present Example 3 was obtained.

(Measurement of contact angle)
Example 1, and the contact angle of the surface where the Pd nuclei release film used in Example 2 by 2 / theta method was measured. The results are shown in Table 1.

(Evaluation of plating formability for release film)
The Pd cored release film A according to Example 1 and the Pd cored release film B according to Example 2 were applied to the electroless plating solution (pure water, manufactured by Rohm and Haas, CIRCUPOSIT4500M, 4500A, 4500B). The mixed solution and the mixing ratio were immersed in 72: 12: 6: 10) at 50 ° C. for 4 minutes to form copper plating on the surface of the release film with Pd nucleus. The surface of the resin was visually observed, and the ratio of the area of the plated portion when the entire surface of the release film with Pd nucleus was taken as 100% was defined as the plating rate. The results are shown in Table 1.

(Evaluation of plating formability on thermosetting resin film)
The cover films were peeled from the resin sheets for electronic parts according to Examples 1 to 3, respectively. Next, the thermosetting resin film surface was opposed to a substrate on which a plurality of semiconductor devices (for example, semiconductor chips) were arranged, and molding was performed using a vacuum press at 30 torr, 90 ° C., and 1 MPa. . After opening to the atmosphere, the resin was heat-cured by heating at 150 ° C. for 1 hour.

  Next, the release film is peeled off, and the molded product is electroless plating solution (pure water, manufactured by Rohm and Haas, CIRCUPOSIT 4500M, 4500A, 4500B, mixed ratio is 72: 12: 6: 10 ) For 4 minutes at 50 ° C. to form a copper plating on the resin surface. The surface of the resin was visually observed, and the ratio of the area of the plated portion when the entire resin surface was 100% was taken as the plating rate. The results are shown in Table 1. Further, the case where the plating rate was 100% was evaluated as ◎, the case where it was 90% or more and less than 100 was evaluated as ○, and the case where it was less than 90% was evaluated as ×. The results are shown in Table 1.

(result)
From the results of evaluating the plating formability on the release film, it was confirmed that Pd nuclei were formed on the release film by immersing the release film according to Examples 1 and 2 in a tin-palladium colloidal solution. Moreover, it was confirmed from the results of the evaluation of the plating formability on the thermosetting resin film that the Pd nuclei formed on the release film were transferred to the thermosetting resin film and plating could be formed on the thermosetting resin film.

DESCRIPTION OF SYMBOLS 10 Resin sheet | seat for electronic components 12 Thermosetting type resin film 14 Catalyst layer 16 Peeling film 18 Catalyst layer formation solution 19 Electroless plating layer 40 Substrate 42 Semiconductor chip

Claims (8)

It has a thermosetting resin film, a release film, and a cover film ,
Between the thermosetting resin film and the release film, a catalyst layer used for an electroless plating method is provided ,
The said cover film is provided in the surface on the opposite side to the side in which the said peeling film of the said thermosetting resin film is provided , The resin sheet for electronic components characterized by the above-mentioned.   2. The resin sheet for electronic parts according to claim 1, wherein a contact angle with water on a surface of the release film facing the thermosetting resin film is 90 degrees or less.   The resin sheet for electronic parts according to claim 1 or 2, wherein the catalyst layer contains a palladium catalyst. Forming a catalyst layer used in the electroless plating method on the release film;
The catalyst layer is formed surface, Rutotomoni bonding a thermosetting resin film, the surface opposite to the bonding surface of the catalyst layer of the thermosetting resin film, by bonding the cover film And a step of obtaining a resin sheet for electronic parts in which a release film, a catalyst layer , a thermosetting resin film , and a cover film are laminated in this order. 5. The method for producing a resin sheet for electronic parts according to claim 4, wherein a contact angle of the release film with water on a surface facing the thermosetting resin film is 90 degrees or less.   The method for producing a resin sheet for electronic parts according to claim 4 or 5, wherein the catalyst layer contains a palladium catalyst. Preparing the resin sheet for electronic parts according to any one of claims 1 to 3,
Molding the resin sheet for electronic parts;
Heating the resin sheet for electronic parts after molding, and thermosetting the thermosetting resin film;
A step of peeling the release film after thermosetting the thermosetting resin film;
And a step of forming an electroless plating layer on the catalyst layer by an electroless plating method. The step of molding the resin sheet for electronic components is performed by pressing the resin sheet for electronic components against a substrate on which a semiconductor chip is provided so that the thermosetting resin film faces the substrate. The method of manufacturing a semiconductor device according to claim 7, wherein the method is a step of molding the semiconductor device so as to be embedded in a curable resin film.