JP5859598B2 - Transparent conductive film and touch panel - Google Patents

Description

  The present invention relates to a transparent conductive film and a touch panel using the same.

  A transparent conductive member that is transparent in the visible light region and has conductivity is used for preventing static charge of items and blocking electromagnetic waves, as well as transparent electrodes in displays such as liquid crystal displays and electroluminescence displays, and touch panels. ing.

  Conventionally, as a transparent conductive member, so-called conductive glass in which an indium oxide thin film is formed on glass is well known, but conductive glass is flexible and workable because the base material is glass. It is inferior and may be difficult to use depending on the application. Therefore, in recent years, transparent conductive films based on various plastic films such as polyethylene terephthalate have been used due to the advantages of flexibility, workability, impact resistance and light weight. Has been.

  As a transparent conductive film for detecting an input position on a touch panel or the like, a transparent conductive film including a transparent conductive layer having a predetermined pattern shape is known. However, when the transparent conductive layer is patterned, the difference between the pattern portion and the pattern opening portion (non-pattern portion) is clarified, which may deteriorate the appearance as a display element.

  In order to improve the appearance when the transparent conductive layer is patterned, for example, Patent Document 1 below proposes forming a transparent dielectric layer between the transparent base material and the transparent conductive layer.

JP 2009-76432 A

  However, in the conventional transparent conductive film, the boundary between the pattern portion and the pattern opening portion is clarified due to the difference in the hue of the reflected light between the pattern portion and the portion immediately below the pattern opening portion. There was a risk that it would look bad.

  Therefore, the present invention provides a transparent conductive film in which a transparent conductive layer is patterned, and can suppress deterioration in appearance due to a difference in hue of reflected light between a pattern portion and a pattern opening. And a touch panel using the same.

In order to achieve the object, the transparent conductive film of the present invention is a transparent conductive film in which a first transparent dielectric layer and a transparent conductive layer are formed in this order on a transparent substrate, and the transparent conductive layer Are patterned to form a pattern portion and a pattern opening, and the hue a ^* value and the hue b ^* value of reflected light when the pattern portion is irradiated with white light are respectively represented by a ^* _P and When b ^* _P is set and a hue a ^* value and a hue b ^* value of reflected light when white light is irradiated just below the pattern opening are a ^* _O and b ^* _O , respectively, 0 ≦ | a ^* _P It is a transparent conductive film characterized by satisfying a relationship of −a ^* _O | ≦ 4.00 and satisfying a relationship of 0 ≦ | b ^* _P− b ^* _O | ≦ 5.00. The “reflected light” refers to reflected light when white light is irradiated at an incident angle of 10 degrees from the transparent conductive layer side to the pattern portion or the pattern opening portion with a tungsten iodine lamp.

  According to the transparent conductive film of the present invention, since the difference in hue of reflected light between the pattern portion and the pattern opening portion is suppressed, it becomes difficult to distinguish between the pattern portion and the pattern opening portion, and the appearance is good. A transparent conductive film can be provided.

  The transparent conductive film of the present invention further includes a second transparent dielectric layer that is disposed between the first transparent dielectric layer and the transparent conductive layer and has a refractive index different from that of the first transparent dielectric layer. It is preferable. This is because the difference in reflectance between the pattern portion and the pattern opening portion can be reduced, so that the difference between the pattern portion and the pattern opening portion can be further suppressed.

  When the transparent conductive film of the present invention further has the second transparent dielectric layer, the optical thickness of the first transparent dielectric layer is 3 to 45 nm, and the optical thickness of the second transparent dielectric layer is 3 When the optical thickness of the transparent conductive layer is 20 to 100 nm, the refractive index of the second transparent dielectric layer is n1, and the refractive index of the transparent conductive layer is n2, n1 <n2. Is preferably satisfied. This is because the difference in hue of reflected light between the pattern portion and the pattern opening portion can be further suppressed. Moreover, since the difference in reflectance between the pattern portion and the portion immediately below the pattern opening can be further reduced, the difference between the pattern portion and the pattern opening can be further suppressed. The “optical thickness” of each layer is a value obtained by multiplying the physical thickness of each layer (thickness measured by a thickness meter or the like) by the refractive index of the layer. The refractive index in the present invention is a refractive index with respect to light having a wavelength of 589.3 nm. In the present invention, the physical thickness is simply “thickness”.

  The second transparent dielectric layer is preferably patterned to form a pattern portion and a pattern opening. This is because the difference in hue of reflected light between the pattern portion and the pattern opening portion can be further suppressed. In this case, it is preferable that the pattern part of the said transparent conductive layer and the pattern part of the said 2nd transparent dielectric material layer correspond. This is because it is possible to further suppress the difference in hue of reflected light between the pattern portion and immediately below the pattern opening, and to further reduce the difference in reflectance between the pattern portion and immediately below the pattern opening.

  The touch panel of the present invention is a touch panel including the above-described transparent conductive film of the present invention. According to the touch panel of the present invention, the same effects as those of the transparent conductive film of the present invention described above can be obtained.

It is sectional drawing which shows an example of the transparent conductive film of this invention. It is sectional drawing which shows another example of the transparent conductive film of this invention. AC is sectional drawing which shows the other example of the transparent conductive film of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the same code | symbol is attached | subjected to the same component and the overlapping description is abbreviate | omitted.

  FIG. 1 is a cross-sectional view showing an example of the transparent conductive film of the present invention. A transparent conductive film 10 shown in FIG. 1 includes a transparent substrate 1, a first transparent dielectric layer 2, a second transparent dielectric layer 3, and a transparent conductive layer 4 that are sequentially formed on the transparent substrate 1. including. The transparent conductive layer 4 and the second transparent dielectric layer 3 are patterned, and a pattern portion P and a pattern opening O are formed respectively. Further, the pattern portion P of the transparent conductive layer 4 and the pattern portion P of the second transparent dielectric layer 3 coincide.

Then, the transparent conductive film 10 has a hue a ^* value and a hue b ^* value of reflected light when the pattern portion P of the transparent conductive layer 4 is irradiated with white light as a ^* _P and b ^* _P , respectively. When the hue a ^* value and hue b ^* value of the reflected light when white light is irradiated directly under the pattern opening O of the layer 4 are a ^* _O and b ^* _O , respectively, 0 ≦ | a ^* _P −a ^* _O | ≦ 4.00 is satisfied, and 0 ≦ | b ^* _P− b ^* _O | ≦ 5.00 is satisfied. Thereby, since the difference in the hue of the reflected light between the pattern portion P and the pattern opening portion O is suppressed, it becomes difficult to discriminate between the pattern portion P and the pattern opening portion O, and the transparent conductive material having a good appearance. The film 10 can be obtained. In the case of FIG. 1, “directly below the pattern opening O” refers to the surface of the first transparent dielectric layer 2 facing the pattern opening O. In the transparent conductive film 10, in order to further suppress the difference in hue of the reflected light, the relationship 0 ≦ | a ^* _P− a ^* _O | ≦ 3.00 is satisfied, and 0 ≦ | b ^* _P− It is preferable that the relationship b ^* _O | ≦ 4.50 is satisfied. From the same viewpoint, the value of | a ^* _P− a ^* _O | is more preferably 0 to 2.00, further preferably 0 to 1.00, and 0 to 0.70. Is even more preferred.

  In the transparent conductive film 10, a viewpoint of further suppressing a difference in hue of reflected light between the pattern portion P and the pattern opening portion O and a reflectance between the pattern portion P and the pattern opening portion O. From the viewpoint of reducing the difference and further suppressing the difference between the pattern portion P and the pattern opening O, the transparent conductive film 10 preferably satisfies the following conditions. That is, in the transparent conductive film 10, the optical thickness of the first transparent dielectric layer 2 is 3 to 45 nm, the optical thickness of the second transparent dielectric layer 3 is 3 to 50 nm, and the optical thickness of the transparent conductive layer 4. Is 20 to 100 nm, and the refractive index of the second transparent dielectric layer 3 is preferably n1, and the refractive index of the transparent conductive layer 4 is preferably n2, it is preferable that the relationship of n1 <n2 is satisfied. More preferable ranges of the optical thickness of each layer are 3 to 22 nm for the first transparent dielectric layer 2, 3 to 40 nm for the second transparent dielectric layer 3, and 20 to 75 nm for the transparent conductive layer 4. is there.

  Although it does not restrict | limit especially as the transparent base material 1, The various plastic film which has transparency is used. For example, the materials include polyester resins, acetate resins, polyethersulfone resins, polycarbonate resins, polyamide resins, polyimide resins, polyolefin resins, (meth) acrylic resins, polyvinyl chloride resins, poly Examples thereof include vinylidene chloride resins, polystyrene resins, polyvinyl alcohol resins, polyarylate resins, polyphenylene sulfide resins, and the like. Of these, polyester resins, polycarbonate resins, and polyolefin resins are particularly preferable.

  Moreover, the polymer film described in JP 2001-343529 A (WO 01/37007) can also be used. For example, a resin composition containing a thermoplastic resin having a substituted and / or unsubstituted imide group in the side chain and a thermoplastic resin having a substituted and / or unsubstituted phenyl and nitrile group in the side chain can be exemplified. Specifically, a polymer film of a resin composition containing an alternating copolymer composed of isobutylene and N-methylmaleimide and an acrylonitrile / styrene copolymer can also be used.

  The thickness of the transparent substrate 1 is preferably in the range of 2 to 200 μm, and more preferably in the range of 2 to 100 μm. If it is within this range, it is easy to reduce the thickness of the transparent conductive film 10 while ensuring the mechanical strength.

  The transparent substrate 1 is subjected to an etching process such as sputtering, corona discharge, flame, ultraviolet irradiation, electron beam irradiation, chemical conversion, oxidation or undercoating treatment on the surface in advance, and the first transparent dielectric layer 2 provided on the surface. You may make it improve the adhesiveness with respect to the transparent base material 1. FIG. Further, before the first transparent dielectric layer 2 is provided, dust may be removed and cleaned by solvent cleaning, ultrasonic cleaning, or the like, if necessary.

The first and second transparent dielectric layers 2 and 3 can be formed of an inorganic material, an organic material, or a mixture of an inorganic material and an organic material. For example, as an inorganic substance, NaF (1.3), Na ₃ AlF ₆
(1.35), LiF (1.36), MgF ₂ (1.38), CaF ₂ (1.4), BaF ₂ (1.3), SiO ₂ (1.46), LaF ₃ (1. 55), inorganic substances such as CeF ₃ (1.63), Al ₂ O ₃ (1.63) [the values in parentheses of the above materials are refractive indexes. ]. In addition to the above, a composite oxide containing at least indium oxide and cerium oxide can also be used. Examples of organic substances include acrylic resins, urethane resins, melamine resins, alkyd resins, siloxane polymers, organic silane condensates, and mixtures thereof.

In particular, the second transparent dielectric layer 3 is preferably formed of an inorganic material. This is because the photoconductive deterioration can be prevented and the durability of the transparent conductive film 10 can be improved. In this case, the inorganic substance is preferably SiO ₂ . Since SiO ₂ is inexpensive and easily available and has high acid resistance, the second transparent dielectric layer 3 can be prevented from being deteriorated when the transparent conductive layer 4 is patterned by etching with an acid.

The first and second transparent dielectric layers 2 and 3 are provided between the transparent substrate 1 and the transparent conductive layer 4 and do not have a function as a conductive layer. That is, the first and second transparent dielectric layers 2 and 3 are provided as dielectric layers so that they can be insulated between the pattern portions P and P of the transparent conductive layer 4. Accordingly, the first and second transparent dielectric layers 2 and 3 have a surface resistance of, for example, 1 × 10 ⁶ Ω / □ or more, preferably 1 × 10 ⁷ Ω / □ or more, more preferably 1 × 10 ^8. Ω / □ or more. There is no particular upper limit on the surface resistance of the first and second transparent dielectric layers 2 and 3. In general, the upper limit of the surface resistance of the first and second transparent dielectric layers 2 and 3 is about 1 × 10 ¹³ Ω / □ which is the measurement limit, but exceeds 1 × 10 ¹³ Ω / □. There may be.

  The constituent material of the transparent conductive layer 4 is not particularly limited, and is selected from the group consisting of indium, tin, zinc, gallium, antimony, titanium, silicon, zirconium, magnesium, aluminum, gold, silver, copper, palladium and tungsten. At least one metal (or metalloid) oxide is used. If necessary, the oxide may further contain a metal element shown in the above group or an oxide thereof. For example, indium oxide containing tin oxide or tin oxide containing antimony is preferably used.

  The refractive index (n0) of the first transparent dielectric layer 2 is preferably 1.3 to 2.5, and more preferably 1.4 to 2.3. The refractive index (n1) of the second transparent dielectric layer 3 is preferably 1.3 to 2.0, more preferably 1.3 to 1.6. The refractive index (n2) of the transparent conductive layer 4 is preferably 1.9 to 2.1. If each layer is within the above range, transparency can be ensured, and the difference in the hue of reflected light between the pattern portion P and the pattern opening O can be effectively suppressed.

  The thickness of the first transparent dielectric layer 2 is preferably 2 to 30 nm, more preferably 2 to 12 nm, from the viewpoint of thickness uniformity, crack generation prevention, and transparency improvement. From the same viewpoint, the thickness of the second transparent dielectric layer 3 is preferably 2 to 30 nm. From the same viewpoint, the thickness of the transparent conductive layer 4 is preferably 10 to 50 nm, more preferably 10 to 40 nm, and still more preferably 10 to 30 nm.

  As a method for producing the transparent conductive film 10, for example, the first transparent dielectric layer 2, the second transparent dielectric layer 3, and the transparent conductive layer 4 are formed on one side of the transparent substrate 1 from the transparent substrate 1 side. Examples thereof include a method including a step of sequentially forming, a step of etching and patterning the transparent conductive layer 4 with an etching solution, and a step of etching and patterning the second transparent dielectric layer 3 with an etching solution.

  Examples of the method for forming the first transparent dielectric layer 2, the second transparent dielectric layer 3, and the transparent conductive layer 4 include a vacuum deposition method, a sputtering method, an ion plating method, a coating method, and the like. An appropriate method can be employed depending on the required thickness.

  When the transparent conductive layer 4 is etched, the transparent conductive layer 4 may be covered with a mask for forming a pattern, and the transparent conductive layer 4 may be etched with an etching solution such as an acid. Examples of the acid include inorganic acids such as hydrogen chloride, hydrogen bromide, sulfuric acid, nitric acid and phosphoric acid, organic acids such as acetic acid, mixtures thereof, and aqueous solutions thereof.

When the second transparent dielectric layer 3 is etched, the transparent conductive layer 4 is covered with a mask for forming the same pattern as when the transparent conductive layer 4 is etched, and the second transparent dielectric layer 3 is coated with an etching solution. What is necessary is just to etch. As described above, the second transparent dielectric layer 3 is preferably made of an inorganic material such as SiO ₂ , so that an alkali is preferably used as the etching solution. Examples of the alkali include aqueous solutions of sodium hydroxide, potassium hydroxide, ammonia, tetramethylammonium hydroxide, and mixtures thereof.

  In addition, after patterning the transparent conductive layer 4, you may heat-process the patterned transparent conductive layer 4 as needed. This is because the constituent components of the transparent conductive layer 4 are crystallized, so that transparency and conductivity can be improved. The heating temperature at this time is in the range of 100 to 150 ° C., for example, and the heating time is in the range of 15 to 180 minutes, for example.

  About the pattern aspect of the transparent conductive layer 4 and the 2nd transparent dielectric material layer 3, it does not specifically limit, Depending on the use to which the transparent conductive film 10 is applied, various patterns, such as a stripe form, can be formed. it can.

  Next, the transparent conductive film which is another example of this invention is demonstrated, referring FIG. As shown in FIG. 2, the transparent conductive film 20 is the lower surface of the transparent substrate 1 of the transparent conductive film 10 described above (that is, on the opposite side of the transparent substrate 1 from the first transparent dielectric layer 2). The transparent substrate 6 is provided on the surface) via the transparent adhesive layer 5.

  As a constituent material of the transparent adhesive layer 5, if it has transparency, it can be especially used without a restriction | limiting. For example, acrylic polymers, silicone polymers, polyesters, polyurethanes, polyamides, polyvinyl ethers, vinyl acetate / vinyl chloride copolymers, modified polyolefins, epoxy polymers, fluorine polymers, natural rubber, synthetic rubber and other rubber polymers Can be appropriately selected and used. In particular, an acrylic pressure-sensitive adhesive is preferably used from the viewpoint that it is excellent in optical transparency, exhibits adhesive properties such as appropriate wettability, cohesiveness and adhesiveness, and is excellent in weather resistance and heat resistance.

  The transparent pressure-sensitive adhesive layer 5 is usually formed from a pressure-sensitive adhesive solution (solid content concentration of about 10 to 50% by weight) in which a base polymer or a composition thereof is dissolved or dispersed in a solvent. As the solvent, an organic solvent such as toluene or ethyl acetate, or a solvent suitable for the type of adhesive such as water can be appropriately selected and used.

  The thickness of the transparent substrate 6 is preferably 10 to 300 μm, more preferably 20 to 250 μm. Moreover, when forming the transparent base | substrate 6 with a several base film, it is preferable that the thickness of each base film is 10-200 micrometers, and it is more preferable that it is 20-150 micrometers. As the transparent substrate 6 and the substrate film, those similar to the transparent substrate 1 described above can be used.

The transparent substrate 1 and the transparent substrate 6 may be bonded together by providing the transparent adhesive layer 5 on the transparent substrate 6 side and bonding the transparent substrate 1 to this, or conversely the transparent substrate 6 A transparent adhesive layer 5 may be provided on one side, and a transparent substrate 6 may be bonded thereto. In the latter method, since the transparent adhesive layer 5 can be continuously formed on the roll-shaped transparent substrate 1, it is more advantageous in terms of productivity. The transparent substrate 6 can also be formed by sequentially bonding a plurality of substrate films to the transparent substrate 1 with a transparent adhesive layer (not shown). In addition, the thing similar to the transparent adhesive layer 5 mentioned above can be used for the transparent adhesive layer used for lamination | stacking of a base film.

For example, after the transparent substrate 6 is bonded, the transparent pressure-sensitive adhesive layer 5 is provided with a cushioning effect, so that the transparent conductive layer 4 provided on one surface of the transparent substrate 1 has scratch resistance and a dot for touch panel use. It has a function of improving characteristics (so-called pen input durability and surface pressure durability). From the viewpoint of exhibiting this function more effectively, it is preferable to set the elastic modulus of the transparent adhesive layer 5 in the range of 1 to 100 N / cm ² and the thickness in the range of 1 μm or more (more preferably 5 to 100 μm). . If it exists in this range, the said effect will fully be exhibited and the adhesive force of the transparent base | substrate 6 and the transparent base material 1 will also become sufficient.

  The transparent substrate 6 bonded through such a transparent adhesive layer 5 can impart good mechanical strength to the transparent substrate 1, and can improve pen input durability and surface pressure durability. .

  If necessary, a hard coat layer (not shown) for protecting the outer surface may be provided on the outer surface of the transparent substrate 6. As the hard coat layer, for example, a cured film made of a curable resin such as a melamine resin, a urethane resin, an alkyd resin, an acrylic resin, or a silicone resin is preferably used. The thickness of the hard coat layer is preferably 0.1 to 30 μm from the viewpoint of hardness and the prevention of occurrence of cracks and curls.

  As mentioned above, although the transparent conductive film which is an example of this invention was demonstrated, this invention is not limited to the said embodiment. For example, in the above embodiment, the case where the second transparent dielectric layer is patterned has been illustrated, but the second transparent dielectric layer may not be patterned.

  In the present invention, the second transparent dielectric layer may not be provided. In this case, it is preferable to select the constituent materials so that the relationship of n0 <n2 is satisfied, where n0 is the refractive index of the first transparent dielectric layer and n2 is the refractive index of the transparent conductive layer.

  In the present invention, a third transparent dielectric layer 7 may be formed between the second transparent dielectric layer 3 and the transparent conductive layer 4 as shown in FIGS. In this case, each transparent dielectric layer may not be patterned as in the transparent conductive film 30 of FIG. 3A, or even if some of the transparent dielectric layers are patterned as in FIGS. 3B and 3C. Good. That is, the third transparent dielectric layer 7 may be patterned like the transparent conductive film 40 of FIG. 3B, and the second and third transparent dielectric layers 3, 3, like the transparent conductive film 50 of FIG. 7 may be patterned. Although not shown, four or more transparent dielectric layers may be provided.

  The transparent conductive film of the present invention can be provided with an antiglare treatment layer or an antireflection layer for the purpose of improving visibility. In particular, when used for a resistive film type touch panel, an antiglare treatment layer or an antireflection layer is provided on the outer surface of the transparent substrate (the surface opposite to the transparent adhesive layer) in the same manner as the hard coat layer described above. Can do. Further, an antiglare treatment layer or an antireflection layer can be provided on the hard coat layer. On the other hand, when used for a capacitive touch panel, the antiglare treatment layer and the antireflection layer may be provided on the transparent conductive layer.

  The constituent material of the antiglare treatment layer is not particularly limited, and for example, an ionizing radiation curable resin, a thermosetting resin, a thermoplastic resin, or the like can be used. The thickness of the antiglare treatment layer is preferably from 0.1 to 30 μm.

  As the antireflection layer, titanium oxide, zirconium oxide, silicon oxide, magnesium fluoride, or the like is used. In order to express the antireflection function more greatly, it is preferable to use a laminate of a titanium oxide layer and a silicon oxide layer. In the laminate, a titanium oxide layer having a high refractive index (refractive index: about 2.35) is formed on a transparent substrate or a hard coat layer, and a silicon oxide layer having a low refractive index (refractive index: A two-layer laminate in which about 1.46) is formed is preferred. Furthermore, a four-layer laminate in which a titanium oxide layer and a silicon oxide layer are formed in this order on the two-layer laminate is more preferable. By providing such an antireflection layer of a two-layer laminate or a four-layer laminate, reflection in the visible light wavelength region (380 to 780 nm) can be reduced uniformly.

  The transparent conductive film of the present invention can be suitably applied to, for example, a capacitive touch panel and a resistive touch panel.

  Examples of the present invention will be described below together with comparative examples, but the present invention is not construed as being limited to the following examples. In addition, evaluation in an Example and a comparative example was performed by the method shown below.

<Refractive index of each layer>
The refractive index of each layer was measured by using an Abbe refractometer manufactured by Atago Co., Ltd. so that measurement light (wavelength: 589.3 nm) was incident on each measurement surface under the condition of 25.0 ° C. Measurement was carried out by the prescribed measurement method shown in (1).

<Thickness of each layer>
The thickness of the transparent substrate was measured with a Mitsutoyo micro gauge thickness gauge. The thickness of the other layers was measured by observing a cross section with a transmission electron microscope H-7650 manufactured by Hitachi, Ltd.

<Visible light transmittance>
Visible light transmittance at a wavelength of 550 nm was measured using a spectroscopic analyzer UV-240 manufactured by Shimadzu Corporation.

<Reflectance difference>
Using the integrating sphere measurement mode of the spectrophotometer U4100 manufactured by Hitachi, Ltd., the reflection spectrum was measured with an incident angle of 10 degrees, and the average reflectance immediately below the pattern portion and the pattern opening in the wavelength region of 450 to 650 nm was calculated. . And the absolute value of the difference in reflectance between the pattern portion and the pattern opening portion was calculated from these average reflectance values. In the measurement, a light-shielding layer is formed on the back side (transparent substrate side) of the transparent conductive film (sample) using a black spray, and reflection from the back side of the sample and incidence of light from the back side are almost all. Measurement was carried out in the absence.

<Difference in hue>
White light is irradiated at an incident angle of 10 degrees from the transparent conductive layer side directly below the pattern portion or pattern opening, and the hue a ^* value and b ^* value of the reflected light with a wavelength of 380 to 780 nm at that time are spectrophotometrics manufactured by Hitachi, Ltd. Measurement was performed using a total of U4100. From the obtained measured values, Δa ^* and Δb ^* were calculated by the following equations. The calculation of the reflected color was performed under the condition of a double field of view using the standard light D65 defined in JIS Z 8720. In the following ^{formulas, a} _{* P} and ^b _{* P} refers to the hue ^{a *} value and hue ^{b *} value of the reflected light when irradiated with white light to each pattern ^{unit, a} _{* O} and ^b _{* O} is The hue a ^* value and the hue b ^* value of reflected light when white light is irradiated directly under the pattern opening, respectively.
Δa ^* = | a ^* _P− a ^* _O |
Δb ^* = | b ^* _P− b ^* _O |

<Appearance evaluation>
Under sunlight, the sample was placed on a black plate with the transparent conductive layer side facing up, and visually evaluated according to the following criteria.
A: Difficult to distinguish between pattern and pattern opening.
○: The pattern portion and the pattern opening can be slightly distinguished.
X: A pattern part and a pattern opening part can be distinguished clearly.

<Example 1>
(Formation of first transparent dielectric layer)
On one surface of a transparent substrate (refractive index nf = 1.66) made of a polyethylene terephthalate film (hereinafter referred to as PET film) having a thickness of 125 μm, a melamine resin: alkyd resin: organosilane condensate (weight ratio 2: 2: The thermosetting resin 1) was applied and cured to form a first transparent dielectric layer (refractive index n0 = 1.54, thickness: 4 nm).

(Formation of second transparent dielectric layer)
Next, SiO ₂ (refractive index n1 = 1.46) is vacuum deposited on the first transparent dielectric layer by an electron beam heating method at a vacuum degree of 1 × 10 ^{−2 to} 3 × 10 ⁻² Pa. A second transparent dielectric layer having a thickness of 20 nm was formed.

(Formation of transparent conductive layer)
Next, a sintered body material of 97 wt% indium oxide and 3 wt% tin oxide is used on the second transparent dielectric layer in an atmosphere of a mixed gas (0.4 Pa) of 98% argon gas and 2% oxygen gas. Then, an ITO layer (refractive index n2 = 2.00) having a thickness of 22 nm was formed as a transparent conductive layer by a reactive sputtering method.

(Pattern by etching ITO layer)
After forming a photoresist film patterned in a stripe pattern on the ITO layer, the ITO film was immersed in hydrochloric acid (hydrogen chloride aqueous solution) at 25 ° C. and 5% by weight for 1 minute to etch the ITO layer. . The obtained ITO layer had a pattern width of 5 mm and a pattern pitch of 1 mm.

(Patterning by etching the second transparent dielectric layer)
After forming a photoresist film on all the pattern parts of the ITO layer, the photoresist film is immersed in a 2 wt% sodium hydroxide aqueous solution at 50 ° C. for 1 minute to form a second transparent dielectric immediately under the ITO pattern opening. The body layer was etched. The pattern width of the obtained second transparent dielectric layer was 5 mm, and the pattern pitch was 1 mm.

<Examples 2 to 6>
In Example 1, the same operation as Example 1 was performed except having adjusted the thickness of the 1st transparent dielectric layer and the 2nd transparent dielectric layer to the numerical value shown in Table 1, and the transparent conductive film was obtained. .

<Example 7>
In Example 1, the same operation as in Example 1 was performed except that the first transparent dielectric layer was formed by the following method and the thickness of the transparent conductive layer (ITO layer) was 40 nm. A conductive film was obtained.

(Method for Forming First Transparent Dielectric Layer of Example 7)
A titanium target is used on one surface of a transparent substrate (refractive index nf = 1.66) made of a PET film having a thickness of 125 μm in an atmosphere of a mixed gas (0.5 Pa) of 50% argon gas and 50% oxygen gas. Then, a first transparent dielectric layer (refractive index n0 = 2.35, thickness: 8 nm) made of titanium oxide was formed by a reactive sputtering method.

<Comparative Examples 1-4>
In Example 1, the same operation as Example 1 was performed except having adjusted the thickness of the 1st transparent dielectric layer and the 2nd transparent dielectric layer to the numerical value shown in Table 1, and the transparent conductive film was obtained. .

<Comparative Example 5>
In Example 7, a transparent conductive film was obtained in the same manner as in Example 7 except that the thickness of the transparent conductive layer (ITO layer) was 55 nm.

<Comparative Example 6>
In Example 1, except that the thickness of the first transparent dielectric layer was 35 nm and the second transparent dielectric layer was not provided, the same operation as in Example 1 was performed to obtain a transparent conductive film. It was.

  The said evaluation was performed about the transparent conductive film (sample) of the said Example and comparative example. The results are shown in Table 1.

As shown in Table 1, it was found that in the examples, the values of Δa ^* and Δb ^* were both suppressed, and a transparent conductive film having a good appearance was obtained.

DESCRIPTION OF SYMBOLS 1 Transparent base material 2 1st transparent dielectric material layer 3 2nd transparent dielectric material layer 4 Transparent conductive layer 5 Transparent adhesive layer 6 Transparent base | substrate 7 3rd transparent dielectric material layers 10, 20, 30, 40, 50 Transparent conductive film O Pattern opening P Pattern part

Claims (3)

A method for producing a transparent conductive film in which a first transparent dielectric layer, a second transparent dielectric layer, and a transparent conductive layer are formed in this order on a transparent substrate made of a plastic film,
Forming a first transparent dielectric layer, a second transparent dielectric layer and a transparent conductive layer in this order on the transparent substrate from the transparent substrate side;
Etching the transparent conductive layer with an etchant and patterning, and heat treating the patterned transparent conductive layer to crystallize the transparent conductive layer,
The first transparent dielectric layer is formed of an inorganic material;
The transparent conductive layer is patterned to form a pattern portion and a pattern opening,
The first transparent dielectric layer has an optical thickness of 3 to 45 nm;
The optical thickness of the second transparent dielectric layer is 3 to 50 nm,
The optical thickness of the transparent conductive layer is 20 to 100 nm,
When the pattern portion is irradiated with white light from the transparent conductive layer side, the hue a ^* value and the hue b ^* value of reflected light are a ^* _P and b ^* _P , respectively, and the pattern opening portion from the transparent conductive layer side 0 ≦ | a ^* _P− a ^* _O | ≦ 4.00 where the hue a ^* value and the hue b ^* value of the reflected light when irradiated with white light immediately below the light are a ^* _O and b ^* _O , respectively. And a relationship of 0 ≦ | b ^* _P− b ^* _O | ≦ 5.00 is satisfied, and the method for producing a transparent conductive film is characterized in that:   The method for producing a transparent conductive film according to claim 1, wherein the forming step of the first transparent dielectric layer and the second transparent dielectric layer is performed by a reactive sputtering method. When the refractive index of the first transparent dielectric layer is n0, the refractive index of the second transparent dielectric layer is n1, and the refractive index of the transparent conductive layer is n2, the relationship of n1 <n0 and n1 <n2 is satisfied. The manufacturing method of the transparent conductive film of Claim 1 or 2.

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