JP5737568B2 - Display panel, display device and electronic device - Google Patents

Description

  The present invention relates to a display panel including an organic EL (electro luminescence) element, a display device including the display panel, and an electronic apparatus.

  In recent years, in the field of display devices that perform image display, display devices using current-driven optical elements, such as organic EL elements, whose light emission luminance changes according to the value of a flowing current have been developed as light-emitting elements of pixels. (See, for example, Patent Document 1). Unlike a liquid crystal element or the like, the organic EL element is a self-luminous element. Therefore, a display device (organic EL display device) using an organic EL element does not require a light source (backlight), and thus has higher image visibility and lower power consumption than a liquid crystal display device that requires a light source. And the response speed of the element is fast.

  In the organic EL display device, similarly to the liquid crystal display device, there are a simple (passive) matrix method and an active matrix method as its driving method. Although the former has a simple structure, there is a problem that it is difficult to realize a large-sized and high-definition display device. For this reason, active matrix systems are currently being actively developed. In this method, a current flowing through a light emitting element arranged for each pixel is controlled by an active element (typically a thin film transistor (TFT)) provided in a drive circuit provided for each light emitting element.

  By the way, in general, the current-voltage (IV) characteristics of the organic EL element deteriorate (deteriorate with time) as time elapses. In a pixel circuit that current-drives an organic EL element, when the IV characteristic of the organic EL element changes with time, the voltage division ratio between the organic EL element and the drive transistor connected in series to the organic EL element changes. The gate-source voltage of the transistor also changes. As a result, since the current value flowing through the drive transistor changes, the current value flowing through the organic EL element also changes, and the light emission luminance also changes according to the current value.

  Further, the threshold voltage and mobility of the driving transistor may change over time, and the threshold voltage and mobility μ may vary from pixel circuit to pixel circuit due to variations in manufacturing processes. When the threshold voltage and mobility μ of the driving transistor are different for each pixel circuit, the current value flowing through the driving transistor varies for each pixel circuit. Therefore, even if the same voltage is applied to the gate of the driving transistor, the organic EL element The light emission brightness varies, and the uniformity of the screen is lost.

  Therefore, even if the IV characteristic of the organic EL element changes with time or the threshold voltage or mobility of the driving transistor changes with time, the light emission luminance of the organic EL element is kept constant without being affected by them. In order to maintain this, a display device has been developed that incorporates a compensation function for variations in IV characteristics of organic EL elements and a correction function for variations in threshold voltage and mobility of drive transistors.

JP 2008-083272 A

  However, when the efficiency of the organic EL element is reduced, it is difficult to effectively perform the mobility correction, and in some cases, the mobility correction is insufficient, so that there is a problem that burn-in occurs.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a display panel capable of reducing burn-in, a display device including the display panel, and an electronic apparatus.

  The display panel according to the present invention includes a self-light emitting element and a pixel circuit for driving the self-light emitting element for each pixel. The pixel circuit includes a first storage capacitor, a first transistor that writes a voltage corresponding to the video signal to the storage capacitor, and a second transistor that drives the organic EL element based on the voltage of the first storage capacitor. . The pixel circuit further feeds back a voltage corresponding to the intensity of light emitted from the self-luminous element to the gate voltage of the second transistor.

  A display device according to the present invention includes a display panel having a self-light-emitting element, a pixel circuit for driving the self-light-emitting element for each pixel, and a drive circuit for driving the pixel circuit. The display panel included in this display device has the same components as the above display panel. An electronic apparatus according to the present invention includes the above display device.

  In the display panel, the display device, and the electronic apparatus according to the present invention, a voltage corresponding to the intensity of the light emitted from the self-light emitting element is fed back to the gate voltage of the second transistor. As a result, when the pixels are driven based on the same video signal, the luminance difference between the pixels having a relatively high light emission efficiency and the pixels having a relatively low light emission efficiency is reduced.

  In the present invention, at least one of the one or more first transistors is disposed at a position where light emitted from the self-light emitting element is incident, for example. At this time, when the display panel has a bottom emission structure, the transistor arranged at the position where the light emitted from the self-luminous element is incident among the one or the plurality of first transistors is a region facing the transparent electrode. It is preferable to arrange | position. Further, when the display panel has a top emission structure, the transistor arranged at the position where the light emitted from the self-light emitting element is incident among the one or more first transistors is an opening provided in the reflective electrode. It is preferable that it is arrange | positioned in the area | region which opposes.

  In the present invention, the pixel circuit may include a high-speed feedback circuit connected in parallel to the first storage capacitor. Here, the high-speed feedback circuit has a third transistor and a second storage capacitor connected in series with each other.

  According to the display panel, the display device, and the electronic apparatus according to the present invention, when the pixels are driven based on the same video signal, the pixels with relatively high luminous efficiency and the pixels with relatively low luminous efficiency Since the difference in luminance is made small, the burn-in can be reduced.

  In the present invention, when the above-described high-speed feedback circuit is provided, the gate voltage of the second transistor can be corrected more quickly.

1 is a schematic diagram of a display device according to a first embodiment. FIG. 2 is a circuit diagram of a subpixel in FIG. 1. FIG. 2 is a layout diagram of subpixels in FIG. 1. It is sectional drawing of the sub pixel of FIG. FIG. 2 is a waveform diagram illustrating an example of the operation of the display device in FIG. 1. It is a wave form diagram for demonstrating the amount of leak currents by the difference in the intensity of EL light. It is a wave form diagram showing a mode that the voltage according to the intensity of EL light is fed back to the gate. FIG. 3 is a circuit diagram illustrating a modification of the circuit in FIG. 2. It is a wave form diagram showing a mode that the voltage according to the intensity | strength of EL light is fed back to the gate at high speed. It is a wave form diagram showing an example of operation | movement of a display apparatus when using the circuit of FIG. FIG. 4 is a layout diagram illustrating a modified example of the subpixel of FIG. 3. It is sectional drawing of the subpixel of FIG. It is a top view showing schematic structure of the module containing the display apparatus of each said embodiment. It is a perspective view showing the external appearance of the application example 1 of the display apparatus of the said embodiment. (A) is a perspective view showing the external appearance seen from the front side of the application example 2, (B) is a perspective view showing the external appearance seen from the back side. 12 is a perspective view illustrating an appearance of application example 3. FIG. 14 is a perspective view illustrating an appearance of application example 4. FIG. (A) is a front view of the application example 5 in an open state, (B) is a side view thereof, (C) is a front view in a closed state, (D) is a left side view, and (E) is a right side view, (F) is a top view and (G) is a bottom view.

DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the invention will be described in detail with reference to the drawings. The description will be given in the following order.

1. First embodiment
An example in which the display panel has a bottom emission structure. Modified example of the first embodiment
2. Example in which a high-speed feedback circuit is provided Second embodiment
Example of display panel having top emission structure 4. Modified example of the first embodiment
4. Example in which a high-speed feedback circuit is provided Modules and application examples

<1. Embodiment>
[Constitution]
FIG. 1 illustrates an example of the overall configuration of a display device 1 according to an embodiment. The display device 1 includes a display panel 10 and a drive circuit 20 that drives the display panel 10.

  The display panel 10 has a display area 10A in which a plurality of display pixels 14 are two-dimensionally arranged. The display panel 10 displays an image based on the video signal 20A input from the outside by driving each display pixel 14 in an active matrix. Each display pixel 14 includes a red sub-pixel 13R, a green sub-pixel 13G, and a blue sub-pixel 13B. In the following, the subpixel 13 is used as a general term for the subpixels 13R, 11G, and 11B.

  FIG. 2 illustrates an example of a circuit configuration of the subpixel 13. As shown in FIG. 2, the subpixel 13 includes an organic EL element 11, a capacitor Csub connected in parallel to the organic EL element 11, and a pixel circuit 12 that drives the organic EL element 11. The organic EL element 11 corresponds to a specific example of “self-luminous element” in the claims. The subpixel 13R is provided with an organic EL element 11R that emits red light as the organic EL element 11. Similarly, the organic EL element 11G that emits green light is provided as the organic EL element 11 in the subpixel 13G. The subpixel 13B is provided with an organic EL element 11B that emits blue light as the organic EL element 11.

  The pixel circuit 12 includes, for example, a write transistor Tws, a drive transistor Tdr, and a storage capacitor Cs, and has a 2Tr1C circuit configuration. Note that the pixel circuit 12 is not limited to the 2Tr1C circuit configuration, and may include two write transistors Tws connected in series to each other, or may include transistors other than those described above or capacitors. Also good.

  The write transistor Tws is a transistor that writes a voltage corresponding to the video signal to the storage capacitor Cs. The drive transistor Tdr is a transistor that drives the organic EL element 11 based on the voltage of the storage capacitor Cs written by the write transistor Tws. The transistors Tws and Tdr are configured by, for example, n-channel MOS type thin film transistors (TFTs). The transistors Tws and Tdr may be configured by p-channel MOS type TFTs.

  The write transistor Tws in the present embodiment corresponds to a specific example of “first transistor” in the claims, and the drive transistor Tdr in the present embodiment corresponds to the “second transistor” in the claims. This corresponds to a specific example. Further, the storage capacitor Cs of the present embodiment corresponds to a specific example of “first storage capacitor” in the claims.

  The drive circuit 20 includes a timing generation circuit 21, a video signal processing circuit 22, a data line drive circuit 23, a gate line drive circuit 24 and a drain line drive circuit 25. The drive circuit 20 is also connected to the data line DTL connected to the output of the data line drive circuit 23, the gate line WSL connected to the output of the gate line drive circuit 24, and the output of the drain line drive circuit 25. And a drain line DSL. The drive circuit 20 further includes a ground line GND connected to the cathode of the organic EL element 11. The ground line GND is connected to the ground and becomes a ground voltage (reference voltage) when connected to the ground.

  The timing generation circuit 21 controls, for example, the data line driving circuit 23, the gate line driving circuit 24, and the drain line driving circuit 25 to operate in conjunction with each other. For example, the timing generation circuit 21 outputs a control signal 21A to these circuits in response to (in synchronization with) a synchronization signal 20B input from the outside.

  For example, the video signal processing circuit 22 corrects a digital video signal 20A input from the outside, converts the corrected video signal into analog, and outputs a signal voltage 22B to the data line driving circuit 23. is there.

  In response to (in synchronization with) the input of the control signal 21A, the data line driving circuit 23 applies the analog signal voltage 22B input from the video signal processing circuit 22 via each data line DTL to the display pixel to be selected. 14 (or sub-pixel 13). For example, the data line driving circuit 23 can output a signal voltage 22B and a constant voltage unrelated to the video signal.

  In response to (in synchronization with) the input of the control signal 21A, the gate line driving circuit 24 sequentially applies a selection pulse to the plurality of gate lines WSL, thereby applying the plurality of display pixels 14 (or sub-pixels 13) to the gate line WSL. The unit is selected sequentially. The gate line driving circuit 24 can output, for example, a voltage applied when the write transistor Tws is turned on and a voltage applied when the write transistor Tws is turned off.

  The drain line driving circuit 25 outputs a predetermined voltage to the drain of the driving transistor Tdr of each pixel circuit 12 via each drain line DSL in response to (in synchronization with) the input of the control signal 21A. ing. The drain line drive circuit 25 can output, for example, a voltage applied when the organic EL element 11 emits light and a voltage applied when the organic EL element 11 is quenched.

  Next, with reference to FIG. 2 and FIG. 3, the connection relationship and arrangement of each component will be described. FIG. 3 shows an example of the layout of the sub-pixel 13.

  The gate line WSL extends in the row direction, and is connected to the gate 31A of the write transistor Tws via the contact 37A. The drain line DSL is also formed to extend in the row direction, and is connected to the drain 32C of the drive transistor Tdr via the contact 37B. The data line DTL extends in the column direction and is connected to the drain 31C of the write transistor Tws via the contact 37C. The source 31B of the write transistor Tws is connected to the gate 32A of the drive transistor Tdr and one end (terminal 33A) of the storage capacitor Cs. The source 32B of the drive transistor Tdr and the other end (terminal 33B) of the storage capacitor Cs are connected to the anode 35A of the organic EL element 11 via the contact 37D. The organic layer 35C of the organic EL element 11 is disposed on the anode 35A. The cathode 35B of the organic EL element 11 is disposed on the organic layer 35C and is connected to the ground line GND.

  Next, the cross-sectional configuration of the write transistor Tws and the vicinity thereof in the display panel 10 will be described. FIG. 4 illustrates an example of a cross-sectional configuration of the write transistor Tws and the vicinity thereof in the display panel 10. For example, as shown in FIG. 4, the display panel 10 includes an insulating layer 42, an insulating layer 43, an insulating layer 44, and a substrate 45 in this order from the substrate 41 side on the substrate 41 in the vicinity of the write transistor Tws. Have. The insulating layer 43 has an opening 43A, and the organic EL element 11 is provided in the opening 43A. For example, as shown in FIG. 4, the organic EL element 11 is configured by laminating an anode electrode 35A, an organic layer 35C, and a cathode electrode 35B in order from the bottom surface side of the opening 43A.

  The substrates 41 and 45 are made of, for example, a glass substrate, a silicon (Si) substrate, a resin substrate, or the like. The anode electrode 35 </ b> A is a flat film that follows the flat surface of the insulating layer 42. The anode electrode 35A is made of a conductive material transparent to visible light, for example, ITO (Indium Tin Oxide). The organic layer 35C includes, for example, in order from the anode electrode 35A side, a hole injection layer that increases the hole injection efficiency, a hole transport layer that increases the hole transport efficiency to the light emitting layer, and recombination of electrons and holes. A light-emitting layer that causes light emission due to, and an electron-transport layer that increases the efficiency of electron transport to the light-emitting layer. The cathode electrode 35B is formed in contact with at least the upper surface of the organic layer 35C, and functions as a common electrode formed on the entire surface including the insulating layer 43, for example. The cathode electrode 35B is made of a metal material and functions as a reflection mirror. Thereby, the light emitted from the organic layer 35 </ b> C of the organic EL element 11 is output to the outside through the anode electrode 35 </ b> A, the insulating layer 42, and the substrate 41. Therefore, the display panel 10 has a bottom emission structure.

  In the present embodiment, for example, as shown in FIGS. 3 and 4, the write transistor Tws is arranged at a position where light emitted from the organic EL element 11 directly enters. Specifically, the write transistor Tws is disposed immediately below the organic EL element 11, for example, in a region facing the anode electrode 35 </ b> A of the organic EL element 11.

[Operation]
Next, an example of operation | movement of the display apparatus 1 of this Embodiment is demonstrated.

  In this display device 1, a signal voltage 22B corresponding to the video signal 20A is applied to each data line DTL by the data line driving circuit 23, and a selection pulse corresponding to the control signal 21A is driven to the gate line driving circuit 24 and the drain line driving. The circuit 25 sequentially applies to the plurality of gate lines WSL and drain lines DSL. Actually, an image is displayed through an operation described below.

  FIG. 5 shows an example of a voltage waveform applied to a certain pixel circuit 12 and an example of changes in the gate voltage Vg and source voltage Vs of the drive transistor Tdr. FIG. 5A shows a state in which the signal voltage Vsig and the offset voltage Vofs are applied to the data line DTL. FIG. 5B shows a state where a voltage Von for turning on the write transistor Tws and a voltage Voff for turning off the write transistor Tws are applied to the gate line WSL. FIG. 5C shows a state where the voltage Vcc and the voltage Vini are applied to the drain line DSL. Further, in FIGS. 5D and 5E, the gate voltage Vg and the source voltage Vs of the driving transistor Tdr change from time to time in response to voltage application to the drain line DSL, the data line DTL, and the gate line WSL. The situation is shown.

(Threshold correction preparation period)
First, preparation for threshold correction is performed. Specifically, when the voltage of the gate line WSL is Voff and the voltage of the drain line DSL is Vcc (that is, when the organic EL element 11 emits light), the drain line driving circuit 25 is The voltage of the drain line DSL is lowered from Vcc to Vini (T1). Then, the source voltage Vs becomes Vini, and the organic EL element 11 is quenched. Thereafter, when the voltage of the data line DTL is Vofs, the gate line driving circuit 24 raises the voltage of the gate line WSL from Voff to Von, and sets the gate of the driving transistor Tdr to Vofs.

(First threshold correction period)
Next, threshold correction is performed. Specifically, while the write transistor Tws is on and the voltage of the data line DTL is Vofs, the drain line drive circuit 25 increases the voltage of the drain line DSL from Vini to Vcc (T2). Then, a current Ids flows between the drain and source of the drive transistor Tdr, and the source voltage Vs increases. Thereafter, before the data line driving circuit 23 switches the voltage of the data line DTL from Vofs to Vsig, the gate line driving circuit 24 lowers the voltage of the gate line WSL from Von to Voff (T3). Then, the gate of the drive transistor Tdr becomes floating, and the threshold value correction is paused.

(First threshold correction suspension period)
During the period when the threshold correction is paused, for example, the voltage of the data line DTL is sampled in another row (pixel) different from the row (pixel) on which the previous threshold correction has been performed. At this time, since the source voltage Vs is lower than Vofs−Vth (Vth is the threshold voltage of the driving transistor Tdr) in the row (pixel) on which the previous threshold correction is performed, the previous threshold correction is performed even during the threshold correction pause period. In the row (pixel) subjected to threshold correction, the current Ids flows between the drain and source of the drive transistor Tdr, the source voltage Vs rises, and the gate voltage Vg also rises due to coupling via the storage capacitor Cs.

(Second threshold correction period)
Next, threshold correction is performed again. Specifically, when the voltage of the data line DTL is Vofs and threshold correction is possible, the gate line drive circuit 24 raises the voltage of the gate line WSL from Voff to Von, and the gate of the drive transistor Tdr. The voltage is set to Vofs (T4). At this time, when the source voltage Vs is lower than Vofs−Vth (when threshold correction is not yet completed), until the drive transistor Tdr is cut off (until the gate-source voltage Vgs becomes Vth), A current Ids flows between the drain and source of the driving transistor Tdr. Thereafter, before the data line driving circuit 23 switches the voltage of the data line DTL from Vofs to Vsig, the gate line driving circuit 24 lowers the voltage of the gate line WSL from Von to Voff (T5). Then, since the gate of the driving transistor Tdr is in a floating state, the gate-source voltage Vgs can be maintained constant regardless of the magnitude of the voltage of the data line DTL.

  In the threshold correction period, when the storage capacitor Cs is charged to Vth and the gate-source voltage Vgs becomes Vth, the drive circuit 20 ends the threshold correction. However, if the gate-source voltage Vgs does not reach Vth, the drive circuit 20 repeatedly executes threshold correction and threshold correction pause until the gate-source voltage Vgs reaches Vth.

(Writing / mobility correction period)
After the threshold correction suspension period is over, writing and mobility correction are performed. Specifically, while the voltage of the data line DTL is Vsig, the gate line drive circuit 24 raises the voltage of the gate line WSL from Voff to Von (T6), and the gate of the drive transistor Tdr is changed to the data line DTL. Connecting. Then, the gate voltage Vg of the drive transistor Tdr becomes the voltage Vsig of the data line DTL. At this time, the anode voltage of the organic EL element 11 is still smaller than the threshold voltage Vel of the organic EL element 11 at this stage, and the organic EL element 11 is cut off. Therefore, the current Ids flows through the element capacitance (not shown) of the organic EL element 11, and the element capacitance is charged. Therefore, the source voltage Vs increases by ΔV, and the gate-source voltage Vgs eventually becomes Vsig + Vth−ΔV. . In this way, mobility correction is performed simultaneously with writing. Here, ΔV increases as the mobility of the driving transistor Tdr increases. Therefore, by reducing the gate-source voltage Vgs by ΔV before light emission, it is possible to remove variations in mobility for each pixel 13.

(Bootstrap period)
Finally, the gate line driving circuit 24 lowers the voltage of the gate line WSL from Von to Voff (T7). Then, the gate of the drive transistor Tdr becomes floating, the current Ids flows between the drain and source of the drive transistor Tdr, and the source voltage Vs rises. As a result, a voltage equal to or higher than the threshold voltage Vel is applied to the organic EL element 11, and the organic EL element 11 starts to emit light with a desired luminance.

  As described above, in the display device 1 according to the present embodiment, the pixel circuit 12 is controlled to be turned on / off in each subpixel 13, and the driving current is injected into the organic EL element 11 of each subpixel 13, thereby generating holes and electrons. Recombine with each other to emit light, and the light is extracted outside. As a result, an image is displayed in the display area 10 </ b> A of the display panel 10.

[effect]
Next, effects of the display device 1 according to the present embodiment will be described. In the present embodiment, the display panel 10 has a bottom emission structure, and the write transistor Tws is disposed at a position where light emitted from the organic EL element 11 directly enters. Therefore, the characteristics of the write transistor Tws change depending on the light emitted from the organic EL element 11.

  In general, when a transistor receives light, the characteristic changes as shown in FIG. 6, and the leakage current in the off region increases according to the light intensity. Consider this by applying it to the pixel circuit 12. In the following, when the write transistor Tws is composed of an n-channel MOS type transistor, the drive circuit 20 (gate line drive color 24) is connected to the gate of the write transistor Tws by Voff (that is, It is assumed that the organic EL element 11 starts to emit light in a state where a voltage lower than the source voltage and the drain voltage of the writing transistor Tws is applied. When the write transistor Tws is composed of a p-channel MOS transistor, the drive circuit 20 (the gate line drive color 24) is connected to Voff (that is, the write transistor) at the gate of the write transistor Tws. It is assumed that the organic EL element 11 starts emitting light in a state where a voltage higher than the Tws source voltage and the drain voltage is being applied.

First, the write transistor Tws, when the EL light from the organic EL element 11 enters, as shown in FIG. 3, and leakage of charges from the storage capacitor Cs, the leakage current I _L flows through the write transistor Tws. Therefore, for example, as shown in FIGS. 5D and 5E, the gate-source voltage Vgs of the drive transistor Tdr decreases, and the current decreases. 5D and 5E, when the normal gate-source voltage is Vgs0, the gate-source voltage is Vgs1 smaller than Vgs0 in this embodiment. It has been shown.

  The leakage current from the storage capacitor Cs depends on the light intensity. For this reason, as shown in FIG. 7, the leak current is large in a pixel with high luminance, and the leak current is small in a pixel with low luminance. In other words, in the present embodiment, the write transistor Tws is arranged immediately below the organic EL element 11, so that a voltage corresponding to the intensity of light emitted from the organic EL element 11 is changed to the gate voltage of the drive transistor Tdr. Has been fed back. As a result, first, the gate-source voltage Vgs decreases quickly in a pixel with high luminance, and the gate-source voltage Vgs decreases slowly in a pixel with low luminance, so a plurality of signal voltages having the same gradation are written. In the pixel, a luminance difference between a pixel having a relatively high light emission efficiency and a pixel having a relatively low light emission efficiency is reduced. As a result, even if the efficiency of the organic EL element 11 is reduced and it is difficult to effectively perform mobility correction, it is possible to reduce image sticking. In this embodiment mode, burn-in can be reduced without providing a special circuit.

<2. Modification of First Embodiment>
[Constitution]
In the above embodiment, since the charge is leaked from the storage capacitor Cs, the light emission luminance of the organic EL element 11 is corrected while lowering the luminance while the organic EL element 11 emits light. Therefore, it may take time to completely correct the luminance. Therefore, for example, as shown in FIG. 8, a high-speed feedback circuit 15 may be provided in the pixel circuit 12 to shorten the time for correcting the light emission luminance.

  For example, as illustrated in FIG. 8, the high-speed feedback circuit 15 is a circuit connected in parallel to the storage capacitor Cs, and includes, for example, a transistor Tr1 and a storage capacitor Cs1 connected in series to each other. The gate of the transistor Tr1 is connected to a newly provided gate line WSL1. The source or drain of the transistor Tr1 is connected to the gate of the driving transistor Tdr, and the transistor Tr1 source and drain that is not connected to the driving transistor Tdr is connected to the writing transistor Tws and the storage capacitor Cs. Therefore, the gate of the drive transistor Tdr is electrically connected to the write transistor Tws and the holding capacitor Cs when the transistor Tr1 is on, and the holding capacitors Cs and Cs1 are connected in parallel to each other.

[Operation, effect]
Next, the operation and effect of the display device 1 according to this modification will be described. In this modification, as shown in FIG. 9, during the period from the threshold correction preparation period to the bootstrap period, the gate line driving circuit 24 applies the same signal (selection pulse) to both the gate lines WSL and WSL1. Is supposed to be entered. However, in this modification, the gate line driving circuit 24 inputs a selection pulse (P1 in the figure) only to the gate line WSL1 as soon as the light emission period starts.

  As shown in FIG. 10, before the selection pulse (P1 in the figure) is input to the gate line WSL1, the potential difference Vcs1 of the storage capacitor Cs is written in the same manner as when the high-speed feedback circuit 15 is not provided. It decreases due to current leakage by the embedded transistor Tws. However, since no EL light is incident on the transistor Tr1, the potential difference Vcs2 of the storage capacitor Cs2 is not affected by the current leakage caused by the write transistor Tws and remains held. At this time, the potential difference Vcs1 of the storage capacitor Cs decreases as the light emission luminance of the organic EL element 11 increases, and decreases as the light emission luminance of the organic EL element 11 decreases.

  After that, when a selection pulse (P1 in the figure) is input to the gate line WSL1 and the transistor Tr1 is turned on, the storage capacitor Cs and the storage capacitor Cs2 are connected in parallel, so that the potential differences Vcs1 and Vcs2 are equipotential. . Therefore, the potential difference Vcs2 of the storage capacitor Cs1, that is, the gate-source voltage Vgs of the drive transistor Tdr is small in the pixel with high emission luminance of the organic EL element 11, and the drive transistor Tdr of the pixel with low emission luminance of the organic EL element 11 is low. The gate-source voltage Vgs increases. Thereby, in a plurality of pixels in which signal voltages having the same gradation are written, a luminance difference between a pixel having a relatively high light emission efficiency and a pixel having a relatively low light emission efficiency is reduced. As a result, burn-in can be reduced. Further, the time for correcting the luminance can be shortened by increasing the timing of applying the selection pulse (P1 in the figure).

<3. Second Embodiment>
[Constitution]
Next, a display device according to a second embodiment will be described. The display device of the present embodiment is mainly different from the configuration of the display device 1 of the above embodiment in that the display panel 10 has a top emission structure. Therefore, in the following, differences from the above embodiment will be mainly described, and description of common points with the above embodiment will be omitted as appropriate.

  FIG. 11 shows an example of the layout of the sub-pixel 13 in the present embodiment. FIG. 12 illustrates an example of a cross-sectional configuration in the vicinity of the write transistor Tws in the sub-pixel 13 of FIG.

  In the present embodiment, the anode electrode 35 </ b> A and the organic layer 35 </ b> C of the organic EL element 11 are widely formed on the upper surface of the subpixel 13. The anode electrode 35A has an opening H immediately above the write transistor Tws. The anode electrode 35A is made of a metal material and functions as a reflection mirror. The organic layer 35C is widely formed on the upper surface of the sub-pixel 13 including just above the write transistor Tws, and the organic layer 35C can be seen through the opening H just above the write transistor Tws. That is, the write transistor Tws is arranged in a region facing the opening H, and is arranged at a position where light emitted from the organic EL element 11 enters. The cathode electrode 35B is made of a conductive material that is transparent to visible light, such as ITO. Thereby, the light emitted from the organic layer 35 </ b> C of the organic EL element 11 is output to the outside through the anode electrode 35 </ b> A, the insulating layer 42, and the substrate 41.

[effect]
Next, the effect of the display device of this embodiment will be described. In the present embodiment, the display panel 10 has a top emission structure, and the write transistor Tws is disposed at a position where light emitted from the organic EL element 11 directly enters. Therefore, the characteristics of the write transistor Tws change depending on the light emitted from the organic EL element 11.

In the present embodiment, as in the first embodiment, when EL light enters the write transistor Tws, as shown in FIG. 3, the charge leaks from the storage capacitor Cs and leaks to the write transistor Tws. Current I _L flows. Therefore, for example, as shown in FIGS. 5D and 5E, the gate-source voltage Vgs of the drive transistor Tdr decreases, and the current decreases. The leakage current from the storage capacitor Cs depends on the light intensity. For this reason, as shown in FIG. 7, the leak current is large in a pixel with high luminance, and the leak current is small in a pixel with low luminance. That is, in the present embodiment, the write transistor Tws is arranged directly below the organic EL element 11 through the opening H, so that a voltage corresponding to the intensity of light emitted from the organic EL element 11 is driven. This is fed back to the gate voltage of the transistor Tdr. As a result, first, the gate-source voltage Vgs decreases quickly in a pixel with high luminance, and the gate-source voltage Vgs decreases slowly in a pixel with low luminance. In the pixel, a luminance difference between a pixel having a relatively high light emission efficiency and a pixel having a relatively low light emission efficiency is reduced. As a result, even if the efficiency of the organic EL element 11 is reduced and it is difficult to effectively perform mobility correction, it is possible to reduce image sticking. Also in this embodiment mode, burn-in can be reduced without providing a special circuit.

<4. Modification of Second Embodiment>
[Constitution]
In the second embodiment, since the charge is leaked from the storage capacitor Cs, the light emission luminance of the organic EL element 11 is corrected while lowering the luminance while the organic EL element 11 emits light. Therefore, it may take time to completely correct the luminance. Therefore, for example, as shown in FIG. 8, a high-speed feedback circuit 15 may be provided in the pixel circuit 12 to shorten the time for correcting the light emission luminance. In such a case, image sticking can be reduced. Further, the time for correcting the luminance can be shortened by increasing the timing of applying the selection pulse (P1 in the figure) to the gate line WSL1.

<5. Modules and application examples>
Hereinafter, application examples of the display device 1 described in the first and second embodiments and the modifications thereof will be described. The display device 1 displays an externally input video signal or an internally generated video signal as an image or video, such as a television device, a digital camera, a notebook personal computer, a mobile terminal device such as a mobile phone, or a video camera. The present invention can be applied to display devices for electronic devices in all fields.

[module]
The display device 1 is incorporated into various electronic devices such as application examples 1 to 5 described later, for example, as a module shown in FIG. In this module, for example, an area 210 exposed from a member (not shown) that seals the display panel 10 is provided on one side of the substrate 3, and the timing generation circuit 21 and the video signal processing circuit 22 are provided in the exposed area 210. The data line driving circuit 23, the gate line driving circuit 24, and the drain line driving circuit 25 are extended to form external connection terminals (not shown). The external connection terminal may be provided with a flexible printed circuit (FPC) 220 for signal input / output.

[Application Example 1]
FIG. 14 illustrates an appearance of a television device to which the display device 1 is applied. The television apparatus has a video display screen unit 300 including, for example, a front panel 310 and a filter glass 320, and the video display screen unit 300 is configured by the display device 1.

[Application Example 2]
FIG. 15 shows the appearance of a digital camera to which the display device 1 is applied. The digital camera includes, for example, a flash light emitting unit 410, a display unit 420, a menu switch 430, and a shutter button 440, and the display unit 420 includes the display device 1.

[Application Example 3]
FIG. 16 shows the appearance of a notebook personal computer to which the display device 1 is applied. The notebook personal computer has, for example, a main body 510, a keyboard 520 for inputting characters and the like, and a display unit 530 for displaying an image. The display unit 530 is configured by the display device 1. .

[Application Example 4]
FIG. 17 shows the appearance of a video camera to which the display device 1 is applied. This video camera has, for example, a main body 610, a subject photographing lens 620 provided on the front side surface of the main body 610, a start / stop switch 630 at the time of photographing, and a display 640. Reference numeral 640 denotes the display device 1.

[Application Example 5]
FIG. 18 shows an appearance of a mobile phone to which the display device 1 is applied. For example, the mobile phone is obtained by connecting an upper housing 710 and a lower housing 720 with a connecting portion (hinge portion) 730, and includes a display 740, a sub-display 750, a picture light 760, and a camera 770. Yes. The display 740 or the sub display 750 is configured by the display device 1.

  While the present invention has been described with reference to each of the above embodiments and application examples, the present invention is not limited to these, and various modifications can be made.

  For example, in the above embodiment and the like, the case where the display device is an active matrix type has been described. However, the configuration of the pixel circuit 12 for driving the active matrix is not limited to that described in the above embodiment and the like. Therefore, a capacitor and a transistor can be added to the pixel circuit 12 as necessary. In that case, in addition to the timing generation circuit 21, the video signal processing circuit 22, the data line driving circuit 23, the gate line driving circuit 24, and the drain line driving circuit 25 described above, a necessary driving circuit according to the change of the pixel circuit 12. May be added. In this case, when there are a plurality of transistors corresponding to the write transistor Tws, it is sufficient that the light shielding layer SHD is provided for at least one of the plurality of write transistors Tws. A layer SHD is preferably provided.

  In the above embodiment and the like, the timing generation circuit 21 and the video signal processing circuit 22 control the driving of the data line driving circuit 23, the gate line driving circuit 24, and the drain line driving circuit 25. You may make it control these drives. Control of the data line driving circuit 23, the gate line driving circuit 24, and the drain line driving circuit 25 may be performed by hardware (circuit) or software (program).

  In the above-described embodiments and the like, it has been described that the source and drain of the write transistor Tws and the source and drain of the drive transistor Tdr are fixed. Needless to say, depending on the direction in which the current flows, The opposing relationship between the source and the drain may be opposite to the above description.

  In the above embodiments and the like, it has been described that the write transistor Tws and the drive transistor Tdr are formed of n-channel MOS type TFTs. However, at least one of the write transistor Tws and the drive transistor Tdr is p It may be formed by a channel MOS type TFT. When the drive transistor Tdr is formed of a p-channel MOS type TFT, the anode 35A of the organic EL element 11 is a cathode and the cathode 35B of the organic EL element 11 is an anode in the above-described embodiment and the like. . In the above-described embodiment and the like, the write transistor Tws and the drive transistor Tdr do not always need to be amorphous silicon type TFTs or micro silicon type TFTs. For example, even a low temperature polysilicon type TFT may be used. Good.

  In the above-described embodiment and the like, the threshold correction and the mobility correction are always performed, but the luminance correction in the present disclosure does not need to be performed simultaneously with the threshold correction and the mobility correction. Therefore, for example, by performing only the luminance correction in the present disclosure without performing the threshold correction and the mobility correction, it is possible to reduce the luminance unevenness due to the variation in the threshold and the mobility.

  DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 10 ... Display panel, 10A ... Display area | region, 11, 11R, 11G, 11B ... Organic EL element, 12 ... Pixel circuit, 13, 13R, 13G, 13B ... Sub pixel, 14 ... Display pixel, 15 ... High-speed feedback circuit, 20... Driving circuit, 21... Timing generation circuit, 21 A. control signal, 22... Video signal processing circuit, 23... Data line driving circuit, 24. 32A ... Gate, 31B, 32B ... Source, 31C, 32C ... Drain, 33A, 33B ... Terminal, 35A ... Anode electrode, 35B ... Cathode electrode, 35C ... Organic layer, 41, 45 ... Substrate, 42, 43, 44 ... Insulation Layer, 43A, H ... opening, Cs, Cs1 ... holding capacitor, Tdr ... drive transistor, Tr1 ... transistor, Tws ... write transistor Star, DSL ... drain line, DTL ... data line, WSL, WSL1 ... gate line.

Claims (9)

A display panel including a self-light emitting element and a pixel circuit for driving the self-light emitting element for each pixel,
The pixel circuit includes a first storage capacitor, a first transistor that writes a voltage corresponding to a video signal to the storage capacitor, and a second transistor that drives the organic EL element based on the voltage of the first storage capacitor. And having a voltage according to the intensity of the light emitted from the light emitting element fed back to the gate voltage of the second transistor ,
The pixel circuit includes a high-speed feedback circuit connected in parallel to the first storage capacitor,
The display panel , wherein the high-speed feedback circuit includes a third transistor and a second storage capacitor connected in series with each other . The display panel according to claim 1, wherein the first transistor is disposed at a position where light emitted from the self-light-emitting element is incident. The display panel includes a substrate on which the pixel circuit is formed,
The self-luminous element has a transparent electrode, an organic layer and a reflective electrode in order from the substrate side,
The display panel according to claim 1, wherein the first transistor is disposed in a region facing the transparent electrode. The display panel includes a substrate on which the pixel circuit is formed,
The self-luminous element has a reflective electrode, an organic layer, and a transparent electrode in order from the substrate side,
The reflective electrode has an opening;
The display panel according to claim 1, wherein the first transistor is disposed in a region facing the opening. A display panel having a self-luminous element and a pixel circuit for driving the self-luminous element for each pixel;
A drive circuit for driving the pixel circuit,
The pixel circuit includes a storage capacitor, one or more first transistors that write a voltage corresponding to a video signal to the storage capacitor, and a second transistor that drives the organic EL element based on the voltage of the storage capacitor. And having a voltage according to the intensity of the light emitted from the light emitting element fed back to the gate voltage of the second transistor ,
The pixel circuit includes a high-speed feedback circuit connected in parallel to the first storage capacitor,
The display device , wherein the high-speed feedback circuit includes a third transistor and a second storage capacitor connected in series with each other . The display device according to claim 5 , wherein at least one of the one or more first transistors is disposed at a position where light emitted from the self-light-emitting element is incident. Of the one or more first transistors, a transistor disposed at a position where light emitted from the self-luminous element is incident is an n-channel MOS transistor,
The drive circuit applies a voltage lower than the source voltage and drain voltage of the n-channel MOS transistor to the gate of the n-channel MOS transistor when the self-luminous element emits light. The display device according to claim 6 . Of the one or more first transistors, a transistor disposed at a position where light emitted from the light-emitting element is incident is a p-channel MOS transistor,
The drive circuit applies a voltage higher than the source voltage and drain voltage of the n-channel MOS transistor to the gate of the n-channel MOS transistor when the self-luminous element emits light. The display device according to claim 6 . A display device,
The display device
A display panel having a self-luminous element and a pixel circuit for driving the self-luminous element for each pixel;
A driving circuit for driving the pixel circuit,
The pixel circuit includes a storage capacitor, a first transistor that writes a voltage corresponding to a video signal to the storage capacitor, and a second transistor that drives the organic EL element based on the voltage of the storage capacitor. A voltage corresponding to the intensity of light emitted from the self-luminous element is fed back to the gate voltage of the second transistor ;
The pixel circuit includes a high-speed feedback circuit connected in parallel to the first storage capacitor,
The high-speed feedback circuit has a third transistor and a second storage capacitor connected in series with each other .

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