JP5735226B2 - Vapor deposition apparatus and vapor deposition method - Google Patents

Description

  The present invention relates to a vapor deposition technique such as an organic material for producing, for example, an organic EL display, an organic EL lighting device, a vapor deposition polymer film, and the like.

5 (a) and 5 (b) are schematic configuration diagrams of an organic vapor deposition apparatus according to the prior art, FIG. 5 (a) is a cross-sectional view showing an internal configuration, and FIG. 5 (b) is an evaporation source and a surface evaporator. It is a top view which shows the structure of these.
As shown in FIGS. 5 (a) and 5 (b), a conventional organic vapor deposition apparatus 101 has a vacuum chamber 102 connected to a vacuum exhaust system (not shown). A substrate 103 is arranged.

A surface evaporator 104 is provided inside the vacuum chamber 102.
The surface evaporator 104 is configured by arranging a plurality of pipe-like steam dischargers 107 each having a heater 105 for heating and provided with a nozzle 106 for discharging steam. The steam discharger 107 includes a steam transport pipe 108. To the evaporation source 110.

The evaporation source 110 has an evaporation container 112 in which an organic material 111 is accommodated, and a heater 113 for heating is attached to the outer wall of the evaporation container 112.
With such a configuration, the vapor of the organic material vaporized in the evaporation source 110 is introduced into the vapor discharger 107 via the vapor transport pipe 108 so that the vapor is discharged from the nozzle 106 and reaches the substrate 103. It has become.

  However, in such a conventional technique, since the vapor transport pipe 108 is arranged in the vacuum chamber 102, the flow of the vapor of the evaporation material is affected. As a result, the vapor discharged from the vapor discharger 107 is affected. There is a problem that the distribution becomes non-uniform.

  That is, in the prior art, the amount of steam discharged from the plurality of steam dischargers 107 cannot be individually controlled, and the amount of steam discharge differs for each steam discharger 107, so that it is formed on the substrate 103. There is a problem that the uniformity of the film thickness is poor.

  In particular, when a film is formed using a dopant material for an organic layer of an organic EL device, the luminance of the device is greatly changed by a slight difference in film thickness, and thus the film is formed on a substrate 103 having a large area. There is a problem that it is difficult to deal with.

  Further, in the case where film formation is performed simultaneously using a dopant material and a host material, the vapor of the dopant material and the host material is difficult to mix and is deposited on the substrate 103 as it is. There is also a problem that it is difficult to form a film having a uniform ratio.

  Furthermore, in the case where film formation is simultaneously performed using a dopant material and a host material, there is a problem in that the dopant material vapor emitter and the host material vapor emitter may be contaminated with each other.

JP 2004-79904 A JP-A-7-90572

The present invention has been made to solve the above-described problems of the prior art, and the object of the present invention is to form a film having a uniform film thickness and film quality on a large-area film-forming target. An object of the present invention is to provide a vapor deposition technique that can be used.
Another object of the present invention is to provide a vapor deposition technique in which the vapor dischargers are not likely to be contaminated with each other in the case where films are formed simultaneously using different evaporation materials.

In order to achieve the above object, the present invention comprises a vacuum chamber in which a film formation target is disposed, a plurality of evaporation sources provided outside the vacuum chamber, and an elongated shape. The vapor of the evaporating material provided from the plurality of evaporation sources is directed toward the film formation target, and is provided in a direction that can move relative to the film target and intersects the relative movement direction. A vapor discharge device for discharging the vapor, wherein the vapor discharge device is provided with a vapor of the evaporation material from the evaporation source and is isolated from each other in the longitudinal direction of the vapor discharge device. A plurality of vapor diffusion portions having a shape and an elongated vapor mixing chamber extending in the longitudinal direction of the vapor discharge device for mixing the vapor of the evaporation material diffused in the plurality of vapor diffusion portions are integrally configured, The plurality of vapor diffusion parts , Which has a plurality of diffusion chamber which is stepwise divided toward the discharge side from the introduction side of the vapor of the evaporating material, respectively, the plurality of diffusion chamber has a partition wall for isolating the mutual atmosphere The diffusion chambers adjacent to each other are connected via a communication port through which the vapor of the evaporation material can pass, and the final diffusion chamber of the plurality of diffusion chambers is in communication with the vapor of the evaporation material. Each of the vapor mixing chambers is connected to the vapor mixing chamber via an opening, and the vapor mixing chamber is provided with a plurality of vapor discharge ports arranged along the longitudinal direction of the vapor mixing chamber .
In the present invention, the communication ports of the plurality of vapor diffusion portions are also effective when the number is increased from the evaporation material introduction side to the discharge side.
In the present invention, the communication ports of the plurality of vapor diffusion parts are configured to increase by 2 ^n-1 pieces (n is a natural number) from the vapor introduction side to the discharge side of the vaporized material. Is also effective.
In the present invention, the communication ports of the plurality of vapor diffusion parts are also effective when the sum of the areas of the respective communication ports is reduced from the vapor introduction side to the discharge side of the evaporation material. Is.
In the present invention, the plurality of evaporation sources are also effective when each has a steam amount control means for independently controlling the amount of steam supplied to the steam discharger.
In the present invention, the plurality of evaporation sources are also effective when a host material evaporation source having an evaporation container for host material and a dopant material evaporation source having an evaporation container for dopant material are provided.
In the present invention, the plurality of evaporation sources include a plurality of evaporation sources for generating vapors of the three primary colors of light, and independently control the amount of steam supplied from the plurality of evaporation sources to the vapor discharger. This is also effective when configured as described above.
On the other hand, the present invention is a vapor deposition method for forming an organic thin film on a film formation target using any of the vapor deposition apparatuses described above, and for forming an organic thin film layer of an organic EL device as the evaporation material. This is a vapor deposition method using an organic material.
The present invention is particularly effective when a host material and a dopant material for forming an organic thin film layer of an organic EL device are used as the evaporation material.
The present invention is also effective when an evaporating material for generating vapors of the three primary colors of light is used as the evaporating material.
In the present invention, vapors of evaporation materials of the three primary colors of light are supplied to and mixed with the vapor discharger, and vapors of the evaporation material discharged from the vapor discharger are discharged toward the film formation target and the components are formed. It is also effective in the case where a layered organic thin film having a white tandem structure is formed on the film formation target by moving the film target multiple times with respect to the vapor discharge device.
In the present invention, using a vapor deposition apparatus having a plurality of evaporation sources that can be generated by switching the vapor of the three primary colors of light, the vapor of the evaporation material of each color of the three primary colors of light is supplied to the vapor discharger and mixed, The vapor deposition material vapor released from the vapor discharger is discharged toward the film formation target, and the film formation target is moved at least three times with respect to the vapor discharge target, thereby forming the film formation target. It is also effective when it has a step of forming a full-color organic thin film thereon.

  In the case of the present invention, each of the plurality of vapor diffusion sections has a plurality of diffusion chambers that are divided in stages from the vapor introduction side to the discharge side of the evaporation material, and the plurality of diffusion chambers are adjacent to each other. The diffusion chamber is connected via a communication port through which the vapor of the evaporation material can pass, and the final diffusion chamber among the plurality of diffusion chambers is connected via the communication port through which the vapor of the evaporation material can pass. Since it is connected to the mixing chamber, it is possible to reliably mix different evaporating materials in the vapor mixing chamber after reliably diffusing the vapors of different evaporating materials in the plurality of vapor diffusion sections. On the other hand, when vapor deposition is performed, the film thickness and film quality in each region on the substrate can be made uniform.

  In the case of the present invention, the plurality of vapor diffusion portions of the vapor discharger are supplied with vapors of the evaporation material from the plurality of evaporation sources and the atmospheres are isolated from each other. Even when a film is formed at the same time using a material, a host material, and an evaporating material for generating vapor of the three primary colors of light), there is no possibility that the respective vapor dischargers are contaminated with each other.

Furthermore, according to the present invention, the apparatus includes a so-called linear type vapor discharger having a vapor mixing chamber provided with a plurality of vapor discharge ports arranged in a direction intersecting the relative movement direction of the film formation target. By providing a plurality of vapor deposition apparatuses of the present invention in an in-line vacuum system, a mass production apparatus that continuously forms an organic layer of an organic EL apparatus can be provided.

  Furthermore, in the present invention, when each of the plurality of evaporation sources has a steam amount control means (for example, a valve) for independently controlling the amount of steam supplied to the steam discharger, this steam amount control. By controlling the means (for example, switching the bulb), it becomes possible to form a full-color or white organic layer using the three primary colors of light.

  According to the present invention, it is possible to form a film having a uniform film thickness and film quality on a large-area film formation target, and in the case where film formation is performed simultaneously using different evaporation materials, each vapor release It is possible to provide a deposition technique in which the vessels are not likely to be contaminated with each other.

Schematic configuration plan view showing the overall configuration of an organic EL manufacturing apparatus using a vapor deposition apparatus according to the present invention (A): Cross-sectional view showing the internal configuration of the vapor deposition apparatus (b): Schematic configuration diagram showing the internal configuration of the main body of the linear vapor discharger of the vapor deposition apparatus (A) (b): The figure which shows the other example of the linear vapor discharger used for this invention Sectional drawing which shows the internal structure of the vapor deposition apparatus of other embodiment of this invention. (A): Schematic configuration diagram of an organic vapor deposition apparatus according to the prior art, cross-sectional view showing the internal configuration (b): plan view showing the configuration of the evaporation source and the surface evaporator

Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
FIG. 1 is a schematic configuration plan view showing the overall configuration of an organic EL manufacturing apparatus using a vapor deposition apparatus according to the present invention, FIG. 2A is a cross-sectional view showing the internal configuration of the vapor deposition apparatus, and FIG. These are the schematic block diagrams which show the internal structure of the main-body part of the linear vapor discharger of the vapor deposition apparatus. Hereinafter, the vertical relationship will be described based on the configuration shown in FIGS. 2A and 2B, but the present invention is not limited to this.

As shown in FIG. 1, the organic EL manufacturing apparatus 1 of the present embodiment has an in-line type vacuum chamber 2 connected to a vacuum exhaust system (not shown). 2A is provided, and a vapor deposition region 2B is provided in the central portion of the vacuum chamber 2.
Here, a transport device (not shown) is provided in the vapor deposition region 2B, and the substrate 60 is transported linearly in the longitudinal direction of the vacuum chamber 2, that is, in the direction of the arrow X or the opposite direction.

The vapor deposition region 2B is provided with a plurality of linear vapor dischargers (vapor dischargers) 10 constituting the vapor deposition device 30 for forming an organic layer of an organic EL device (not shown).
The vapor deposition region 2B of the vacuum chamber 2 is connected to the transfer chamber 5 via a mask alignment (bonding and separation) region 2C.

  A transfer robot (not shown) is provided in the transfer chamber 5, and a pretreatment chamber 6 </ b> A, an electrode forming chamber 6 </ b> B, a sealing chamber 6 </ b> C, which are provided around the transfer chamber 5 through the gate valves D to H, respectively. The substrate 60 and the mask (not shown) are transferred between the chamber 6D and the preparation take-out chamber 6E.

  The transfer chamber 5, the pretreatment chamber 6A, the electrode forming chamber 6B, the sealing chamber 6C, the charging / unloading chamber 6D and the charging / unloading chamber 6E described above are each connected to a vacuum exhaust system (not shown) and independently vacuum exhausted Is supposed to do.

  As shown in FIG. 1 or FIG. 2 (a) (b), the linear vapor discharger 10 of the present embodiment has an elongated main body portion 10A, for example, a box shape, and the main body portion 10A is in the substrate transport direction. They are arranged in a direction crossing X (in this embodiment, a Y direction perpendicular to the substrate transport direction X).

  The main body portion 10A of the linear vapor emitter 10 diffuses a host material diffusion portion 10h for diffusing a host material for forming an organic layer of an organic EL device, for example, and a dopant material for forming an organic layer of the organic EL device. The host material diffusion unit 10h and the dopant material diffusion unit 10d are connected and integrated via a vapor mixing chamber 41 as will be described later.

The host material diffusion portion 10h and the dopant material diffusion portion 10d basically have the same configuration, and both configurations will be described below as common.
The main body 10A of the linear vapor discharger 10 has a supply pipe 7h (7d) connected to, for example, a steam introduction chamber 10B provided in the lower part of the main body 10A, and a predetermined organic material via these supply pipes 7h and 7d. It is configured to introduce steam.

  As shown in FIG. 1, the supply pipes 7h and 7d are connected to a host material evaporation source 8h and a dopant material evaporation source 8d, for example, as evaporation sources provided outside the vapor deposition region 2B.

  In the case of the present embodiment, the host material evaporation source 8h includes a red evaporation source 85R, a green evaporation source 85G, and a blue evaporation source 85B as evaporation sources for generating vapors of the three primary colors of light. The red evaporation source 85R, the green evaporation source 85G, and the blue evaporation source 85B are connected to the linear vapor discharger 10 via the supply pipe 7h.

  Similarly to the host material evaporation source 8h, the dopant material evaporation source 8d is a red evaporation source 86R, a green evaporation source 86G, and a blue evaporation source as evaporation sources for generating vapors of the three primary colors of light. 86B, and the red evaporation source 86R, the green evaporation source 86G, and the blue evaporation source 86B are connected to the linear vapor discharger 10 through the supply pipe 7d.

  In the present embodiment, the red evaporation source 85R, the green evaporation source 85G, the blue evaporation source 85B of the host material evaporation source 8h, the red evaporation source 86R of the dopant material evaporation source 8d, and the green evaporation source 86G. The blue evaporation source 86B has the same configuration.

  Here, the red evaporation source 85R, the green evaporation source 85G, the blue evaporation source 85B, and the red evaporation source 86R of the dopant material evaporation source 8d, the green evaporation source 86G, and the blue evaporation source 8h of the host material evaporation source 8h. As shown in FIG. 2A, the sources 86 </ b> B each have an evaporation container 84. Each evaporation container 84 contains a predetermined organic material 81 and is provided around each evaporation container 84. Each evaporation container 84 is heated by the heater 82.

  Each of the red evaporation sources 85R (86R), the green evaporation source 85G (86G), and the blue evaporation source 85B (86B) is connected to a gas supply source (not shown). A carrier gas whose flow rate is controlled is supplied from a gas supply source.

  Furthermore, the red evaporation source 85R of the host material evaporation source 8h, the green evaporation source 85G, the evaporation container 84 of the blue evaporation source 85B, the red evaporation source 86R of the dopant material evaporation source 8d, and the green evaporation source 86G. The blue evaporation source 86B is connected to the supply pipe 7h or 7d via a valve 80 capable of independently controlling the flow rate of the steam.

  In the present embodiment, the red evaporation source 85R of the host material evaporation source 8h, the green evaporation source 85G, the valve 80 of the blue evaporation source 85B, and the red evaporation source 86R of the dopant material evaporation source 8d, By switching the valves 80 of the green evaporation source 86G and the blue evaporation source 86B respectively, the vapors of the three primary colors (R, G, B) of light and the predetermined host material and dopant material are changed based on predetermined information. The linear steam discharger 10 is configured to be supplied to the steam introduction chamber 10B.

On the other hand, the supply pipes 7d and 7h are provided with vapor discharge nozzles 70 each having a small conductance in the vapor deposition region 2B in the vacuum chamber 2.
A film thickness sensor 71 is provided in the vicinity of the vapor discharge nozzle 70, and an organic material supplied to the vapor introduction chamber 10B via the supply pipes 7d and 7h based on the result detected by the film thickness sensor 71. Is configured to control the amount of steam.

  On the other hand, the linear vapor discharger 10 of the present embodiment has a plurality of (three in this example) first to third diffusion chambers 11, 21, 31 are provided in this order.

Further, as will be described below, in the present embodiment, the number of first to fourth communication ports 12 increases by 2 ^n-1 (n is a natural number) from the evaporation material introduction side to the discharge side. , 22, 32, and 42 are provided.
The first diffusion chamber 11 is configured to have a larger volume than the steam introduction chamber 10B, and is connected to the steam introduction chamber 10B through one first communication port 12 provided at the bottom thereof.

The position of the first communication port 12 is set so as to face the ceiling portion of the first diffusion chamber 11 , whereby the vapor of the evaporation material collides with the ceiling portion of the first diffusion chamber 11. In order to facilitate understanding, in FIG. 2B, the positions of the first communication port 12 and the second communication port 22 are overlapped with each other. Drawn).
The first diffusion chamber 11 is connected to the second diffusion chamber 21 via two second communication ports 22 provided in the ceiling portion (the bottom portion of the second diffusion chamber 21).

  In the case of the present invention, although not particularly limited, from the viewpoint of preventing gas backflow, that is, maintaining the pressure gradient, the sum of the areas of the second communication ports 22 is the sum of the first communication ports 12. It is preferable to set so as not to be larger (smaller) than the sum of the areas.

  Furthermore, from the viewpoint of evenly distributing the gas flow, the area and shape of the communication port in the same stage are made the same, and in this embodiment, the area and shape of the first to third communication ports 12 to 32 are the same. More preferably.

Further, the position of the second communication port 22 is set so as to face the ceiling portion of the second diffusion chamber 21 , whereby the vapor of the evaporation material collides with the ceiling portion of the second diffusion chamber 21. In order to facilitate understanding, in FIG. 2B, the positions of the second communication port 22 and the third communication port 32 are overlapped with each other. Is drawn on).

  Furthermore, in the present embodiment, the second diffusion chamber 21 is partitioned into two regions by the two partition walls 21a, and the atmosphere of each region is isolated differently. These partition walls 21a are effective for promoting the diffusion thereof when the vaporized material particles collide.

In the present invention, the position where the partition wall 21a is provided is not particularly limited. However, from the viewpoint of more uniformly diffusing the vapor of the evaporation material, the second diffusion chamber 21 isolated by the partition wall 21a. It is preferable to provide in the position where the volume of each area | region and the passage speed of the vapor | steam of an evaporating material become equal.
The second diffusion chamber 21 is connected to the third diffusion chamber 31 through four third communication ports 32 provided in the ceiling portion (the bottom of the third diffusion chamber 31).

  In the case of the present invention, although not particularly limited, from the viewpoint of preventing gas backflow, that is, maintaining the pressure gradient, the sum of the areas of the third communication ports 32 is the above-described second communication port. It is preferable to set so as not to be larger (smaller) than the sum of the areas of 22.

  Further, the position of the third communication port 32 is set so as to face the ceiling portion of the third diffusion chamber 31, whereby the vapor of the evaporation material collides with the ceiling portion of the third diffusion chamber 31. Thus, the vapor diffusion of the evaporation material is configured to be promoted (in FIG. 2B, the positions of the third communication port 32 and the fourth communication port 42 are overlapped for easy understanding). Is drawn on).

  Further, in the present embodiment, the third diffusion chamber 31 is partitioned into four regions by, for example, six partition walls 31a, and the atmosphere of each region is isolated differently. These partition plates are effective for promoting the diffusion of the vaporized material particles by collision.

  In the present invention, the position where the partition wall 31a is provided is not particularly limited, but from the viewpoint of more uniformly diffusing the vapor of the evaporation material, the third diffusion chamber 31 partitioned by the partition wall 31a. It is preferable to provide at a position where the volume of each region and the vapor passing speed of the evaporating material are equal.

Further, a steam mixing chamber 41 is provided in a portion of the third diffusion chamber 31 on the substrate 60 side.
Then, as shown in FIGS. 2A and 2B, the third diffusion chamber 31 of the host material diffusion portion 10h and the dopant material diffusion portion 10d is provided in the ceiling portion (the bottom portion of the vapor mixing chamber 41). The steam mixing chamber 41 is connected through eight fourth communication ports 42.

  In the case of the present invention, although not particularly limited, from the viewpoint of preventing gas backflow, that is, maintaining the pressure gradient, the sum of the areas of the fourth communication ports 42 is the above-described third communication port. It is preferable to set so as not to be larger (smaller) than the sum of the 32 areas.

  Further, the position of the fourth communication port 42 is set so as to face the ceiling portion of the vapor mixing chamber 41, whereby the vapor of the evaporation material collides with the ceiling portion of the vapor mixing chamber 41 and the evaporation material It is configured to promote the diffusion of steam.

  In the present embodiment, the third diffusion chamber 31 is partitioned into eight regions by seven partition walls 41a, and the atmosphere in each region is isolated differently. These partition plates are effective for promoting the diffusion of the vaporized material particles by collision.

  In the present invention, the position where the partition wall 41a is provided is not particularly limited, but from the viewpoint of more uniformly diffusing the vapor of the evaporation material, each region of the steam mixing chamber 41 partitioned by the partition wall 41a. It is preferable to provide at the position where the volume of the vapor and the vapor passing speed of the evaporating material are equal.

A plurality of vapor discharge nozzles (vapor discharge ports) 52 for discharging the vapor of the evaporation material toward the substrate 60 are provided in the upper part of the vapor mixing chamber 41.
These vapor discharge nozzles 52 are arranged along the Y direction at predetermined intervals at positions facing the substrate 60 in each region of the vapor mixing chamber 41.

In the present invention, the interval between the vapor discharge nozzles 52 which are the vapor discharge ports is not particularly limited, but it is preferable to provide them at regular intervals from the viewpoint of ensuring the uniformity of the film thickness.
A plurality of heaters 53 for heating are provided in the upper part of the steam mixing chamber 41, and a heat radiation preventing plate 54 is provided above the heaters 53.

In the case of forming an organic vapor deposition film on the substrate 60 in the present embodiment having such a configuration, first, for example, a substrate 60 made of, for example, glass, which is a film formation target, is transferred via a preparation take-out chamber 6E. 5 and after carrying out a predetermined pretreatment in the pretreatment chamber 6A, the substrate 60 is carried into the mask alignment region 2C of the vacuum chamber 2 to align the substrate 60 and the mask (not shown).

  Thereafter, with the inside of the vacuum chamber 2 at a predetermined pressure, the heaters 82 of the host material evaporation source 8h and the dopant material evaporation source 8d are heated to vaporize the evaporation material in each evaporation container 84, By opening 80, the three primary colors of the host material and the vapor of the dopant material through the supply pipes 7h and 7d are respectively transferred into the vapor introduction chambers 10B of the host material diffusion portion 10h and the dopant material diffusion portion 10d. Introduce.

The vapor of the evaporation material in the vapor introduction chamber 10B of the host material diffusion portion 10h and the dopant material diffusion portion 10d passes through the first to third communication ports 12 to 32 of the first to third diffusion chambers 11 to 31 described above. After passing and diffusing, it passes through the fourth communication port 42 and is introduced into the vapor mixing chamber 41, in which the vapors of the three primary colors of the host material and the dopant material are mixed.
Thereafter, the vapor of the vaporized material that is sufficiently mixed with the passage of time is discharged from the vapor discharge nozzle 52 of the vapor mixing chamber 41 toward the substrate 60.

In this state, the substrate 60 disposed in the mask alignment region 2C in the vacuum chamber 2 is moved toward the folding region 2A and passed over the plurality of linear vapor emitters 10. Thereby, a white organic vapor deposition film (not shown) is formed on the substrate 60.
Thereafter, with the valves 80 of the red evaporation sources 85R and 86R, the green evaporation sources 85G and 86G, and the blue evaporation sources 85B and 86B closed, the substrate 60 is returned from the folding region 2A to the mask alignment region 2C.

Then, the substrate 60 is moved again toward the folded region 2 </ b> A and passed over the plurality of linear vapor emitters 10, thereby forming a white organic vapor deposition film on the substrate 60.
Thereafter, with each valve 80 closed, the substrate 60 is returned from the folding region 2A to the mask alignment region 2C.
By performing the above film forming process twice or more, for example, an organic thin film having a tandem structure in which a plurality of films that can be used for white illumination or the like are stacked can be formed on the substrate 60.

On the other hand, when an organic thin film of the three primary colors of light is formed on the substrate, the vapor of the red evaporation material is supplied to the linear vapor discharger 10 by opening the valves 80 of the red evaporation sources 85R and 86R, for example. To do.
And the board | substrate 60 arrange | positioned in the mask alignment area | region 2C in the vacuum chamber 2 is moved toward the folding | turning area | region 2A, and the upper direction of the some linear vapor discharge device 10 is allowed to pass through. Thereby, a red organic vapor deposition film is formed on the substrate 60.
Further, the valves 80 of the red evaporation sources 85R and 86R are closed, and the substrate 60 is returned from the folding region 2A to the mask alignment region 2C.

Next, for example, by opening the valves 80 of the green evaporation sources 85G and 86G, the vapor of the green evaporation material is supplied to the linear vapor discharger 10.
Then, the substrate 60 disposed in the mask alignment region 2C in the vacuum chamber 2 is moved toward the folding region 2A and passed over the plurality of linear vapor emitters 10, whereby a green organic vapor deposition film is formed on the substrate 60. Form.
Further, the valves 80 of the green evaporation sources 85G and 86G are closed, and the substrate 60 is returned from the folding region 2A to the mask alignment region 2C.

Finally, the vapor 80 of the blue evaporation material is supplied to the linear vapor discharger 10 by opening the valves 80 of the blue evaporation sources 85B and 86B.
Then, the substrate 60 disposed in the mask alignment region 2C in the vacuum chamber 2 is moved toward the folding region 2A and passed over the plurality of linear vapor emitters 10 to thereby form a blue organic vapor deposition film on the substrate 60. Form.
Further, the valves 80 of the blue evaporation sources 85B and 86B are closed, and the substrate 60 is returned from the folding region 2A to the mask alignment region 2C.
Through the film forming process described above, red, green, and blue organic thin films that are the three primary colors of light are formed on the substrate 60.

  As described above, in the present embodiment, the host material diffusion portion 10h and the dopant material diffusion portion 10d are divided in stages from the vapor introduction side to the emission side of the vaporized material. Each of the first to third diffusion chambers 11 to 31 has diffusion chambers 11 to 31 through the first to fourth communication ports 12 to 42 through which the vapor of the evaporation material can pass through the diffusion chambers adjacent to each other. Further, since the third diffusion chamber 31 which is the final stage is connected to the vapor mixing chamber 41 via the fourth communication port 42, the vapor of the host material and the dopant material which are evaporation materials, In particular, after the evaporation materials for generating the three primary colors of light are reliably diffused, the vapors of the respective evaporation materials can be reliably mixed in the vapor mixing chamber 41, thereby performing vapor deposition on, for example, a large substrate. The film thickness and film quality in each region on the substrate can be made uniform in the case.

  In the present embodiment, the host material diffusing unit 10h and the dopant material diffusing unit 10d of the linear vapor discharge device 10 are supplied with vapors of evaporation material from the host material evaporation source 8h and the dopant material evaporation source 8d, respectively. Since the atmosphere is isolated from each other, the host material diffusion portion 10h and the dopant material diffusion portion 10d are contaminated with each other even when film formation is simultaneously performed using the host material and the dopant material for the organic EL device. There is no fear of being done.

  Furthermore, according to the present embodiment, since the linear vapor discharger 10 is provided, the organic layer of the organic EL device is continuously formed by providing a plurality of vapor deposition devices 30 of the present invention in an in-line vacuum system. A mass production apparatus can be provided.

  Furthermore, in the present embodiment, the host material evaporation source 8h and the dopant material evaporation source 8d each have a valve 80 for independently controlling the amount of vapor supplied to the linear vapor discharger 10. Therefore, by switching the valve 80, a full-color or white organic layer can be formed using the three primary colors of light.

  In particular, in the present embodiment, since the substrate 60 is moved a plurality of times with respect to the linear vapor emitter 10 during film formation, a full-color or tandem-type white organic layer without increasing the size of the apparatus. Can be formed.

  3 (a) and 3 (b) are diagrams showing another example of the linear vapor discharger used in the present invention. In the following, the same reference numerals are given to the portions corresponding to the above-described embodiment, and the details thereof are shown. Description is omitted.

  As shown in FIGS. 3 (a) and 3 (b), the linear vapor discharger 15 of this example does not provide partition walls in the first to third diffusion chambers 11 to 31 and the vapor mixing chamber 41 of the main body 10A. In other respects, the configuration is the same as that of the linear vapor discharger 10 described above.

According to the linear vapor discharger 15 of this example, the configuration is simpler and the cost can be reduced.
However, from the viewpoint of more uniformly diffusing and mixing the vapor of the evaporating material, the first to third diffusion chambers 11 to 31 and the steam mixing chamber 41 of the main body portion 10A as in the linear vapor discharge device 10 described above. It is preferable to provide a partition wall. Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.

FIG. 4 is a cross-sectional view showing an internal configuration of a vapor deposition apparatus according to another embodiment of the present invention. Hereinafter, portions corresponding to those in the above embodiment are denoted by the same reference numerals and detailed description thereof is omitted. To do.
As shown in FIG. 4, the vapor deposition apparatus 31 of this Embodiment has a linear vapor discharger set horizontally.

  That is, the main body portion 10A of the linear vapor discharger 10 of the present embodiment has a host material evaporation source 8h and a dopant material evaporation source 8d arranged in this order in the direction toward the substrate 60. The steam introduction chamber 10 </ b> B, the first to third diffusion chambers 11 to 31, and the steam mixing chamber 41 described above are provided along the substrate transport direction X and integrally configured.

The steam introduction chamber 10B, the first to third diffusion chambers 11 to 31 and the steam mixing chamber 41 are connected by the first to fourth communication ports 12 to 42 described above.
The supply pipes 7 are connected to the vapor introduction chambers 10B of the host material evaporation source 8h and the dopant material evaporation source 8d, and each supply pipe 7 is, for example, a host provided outside the vapor deposition region 2B of the vacuum chamber 2. The material evaporation source 8h and the dopant material evaporation source 8d are connected via a valve 80, respectively.

On the other hand, in the present embodiment, a plurality of vapor discharge nozzles 52 are provided on the upper side of the vapor mixing chamber 41, that is, on the substrate 60 side. The plurality of vapor discharge nozzles 52 are arranged in a direction crossing the moving direction of the substrate, for example, a direction (Y direction) orthogonal to the moving direction of the substrate.
In the present embodiment, a plurality of heaters 17 are provided around the main body 10A.

  According to the present embodiment having such a configuration, since the steam introduction chamber 10B and the first to third diffusion chambers 11 to 31 are provided in the horizontal direction, which is the moving direction of the substrate 60, linear steam discharge The height of the container 10 (the length in the direction toward the substrate 60) can be reduced as compared with the above embodiment. As a result, there is a merit that even if the diffusion chamber is increased, the vapor deposition region of the vacuum chamber 2 is not enlarged.

In the present embodiment, since the host material diffusing portion 10h and the dopant material diffusing portion 10d can be individually heated by the heater 17, the vapor diffusion can be performed under more optimal conditions with respect to the vapor of each evaporation material. It can be carried out.
Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.

The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, in the above embodiment, the case where three diffusion chambers are provided has been described as an example. However, the present invention is not limited to this, and the number of vapor discharge chambers can be arbitrarily set as long as there are a plurality of diffusion chambers.

The number of communication ports provided in the diffusion chamber and the steam mixing chamber is not limited to that in the above embodiment, and can be changed as appropriate.
However, from the viewpoint of reliably diffusing the vapor of the evaporation material, it is preferable to provide eight or more communication ports at the bottom of the vapor mixing chamber.

Further, in the above embodiment, a plurality of regions are provided by providing a partition wall in the main body of the linear vapor discharger. However, the present invention is not limited to this, and each region is individually separated using a box-shaped member. It is also possible to provide it.
Furthermore, the number of evaporation sources provided outside the vacuum chamber is not limited to that in the above embodiment, and can be arbitrarily set as long as an evaporation material can be introduced into each vapor discharge chamber.

On the other hand, the present invention provides not only the three primary colors of host materials and dopant materials for forming the organic layer of the organic EL device, but also different host materials or dopants by switching valves provided in a plurality of evaporation sources, for example. The present invention can also be applied when co-evaporation is performed using a material.
The present invention can also be applied to an apparatus for vapor deposition polymerization using, for example, different evaporation materials, and an apparatus for depositing a metal material or inorganic material such as LiF (lithium fluoride).

Furthermore, although the case where the film formation target is moved has been described as an example in the above embodiment, the present invention is not limited to this, and the linear vapor discharger can also be moved.
As described above, the present invention is more effective when applied to vapor deposition on a large-sized film formation target.

DESCRIPTION OF SYMBOLS 1 ... Organic EL manufacturing apparatus 2 ... Vacuum chamber 2B ... Evaporation area | region 8h ... Evaporation source 8d for host material ... Evaporation source 9 for dopant material ... Heater 10 ... Linear vapor discharger (vapor release device)
DESCRIPTION OF SYMBOLS 10A ... Main-body part 10B ... Steam introduction chamber 10h ... Host material diffusion part 10d ... Dopant material diffusion part 11 ... 1st diffusion chamber 12 ... 1st communication port 21 ... 2nd diffusion chamber 21a ... Partition part 22 ... 2nd communication Mouth 30 ... Evaporation apparatus 31 ... Third diffusion chamber 31a ... Partition wall 32 ... Third communication port 41 ... Vapor mixing chamber 41a ... Partition wall 42 ... Fourth communication port 52 ... Vapor discharge nozzle (vapor discharge port)

Claims (12)

A vacuum chamber in which an object to be deposited is placed;
A plurality of evaporation sources provided outside the vacuum chamber;
An evaporating material that is formed in an elongated shape, is capable of relative movement with respect to the film formation target, and is provided in a direction that intersects the relative movement direction, and is supplied from the plurality of evaporation sources A vapor discharger for discharging the vapor toward the film formation target,
The vapor discharger includes a plurality of elongated vapor diffusion portions extending in the longitudinal direction of the vapor discharge unit, each of which is supplied with vapor of the evaporation material from the evaporation source and is isolated from each other, and the plurality of vapor diffusion units An elongated steam mixing chamber extending in the longitudinal direction of the steam discharger for mixing the vapor of the vaporized material diffused in the vapor diffusion part is integrally configured,
The plurality of vapor diffusion portions respectively have a plurality of diffusion chambers divided in stages from the vapor introduction side to the discharge side of the evaporation material, and the plurality of diffusion chambers isolate each other's atmosphere. has a partition wall and the diffusion chamber adjacent each other vapor of the evaporating material is connected via the communication port can pass for further diffusion chamber in the final stage among the plurality of diffusion chambers, the evaporation material Are connected to the steam mixing chamber through a communication port through which the steam can pass,
The vapor deposition apparatus, wherein the vapor mixing chamber is provided with a plurality of vapor discharge ports arranged along the longitudinal direction of the vapor mixing chamber. Wherein the plurality of communication ports of the vapor diffusion portion is Configured claim 1 Symbol placement evaporation apparatus so that the number is increased toward the discharge side from the introduction side of the evaporation material. Communication port of said plurality of vapor diffusion portion, the evaporator 2 ^n-1 or toward the discharge side from the introduction side of the vapor of the material (n is a natural number) according to claim 1 or 2 is configured to increase at The vapor deposition apparatus of any one of Claims. Communication port of said plurality of vapor diffusion portion is any one of claims 1 to 3 the sum of the areas of each of the communication port toward the discharge side from the introduction side of the vapor of the evaporating material is configured to be smaller The vapor deposition apparatus of 1 item | term. Wherein the plurality of evaporation source, vapor deposition apparatus of any one of claims 1 to 4, each having a steam amount controlling means for independently controlling the amount of steam supplied to the steam ejector. Wherein the plurality of evaporation sources, and a host material for the evaporation source having a vaporization container of the host material, of claims 1 to 5 and a dopant material for the evaporation source having a vaporization container of the dopant material according to any one of claims Vapor deposition equipment. The plurality of evaporation sources include a plurality of evaporation sources for generating vapors of the three primary colors of light, and are configured to independently control the amount of steam supplied from the plurality of evaporation sources to the vapor discharger. The vapor deposition apparatus of any one of Claim 5 or 6 . A deposition method for forming an organic thin film on the film-forming target on using a vapor deposition apparatus of any one of claims 1 to 7,
A vapor deposition method using an organic material for forming an organic thin film layer of an organic EL device as the evaporation material. The vapor deposition method according to claim 8, wherein a host material and a dopant material for forming an organic thin film layer of an organic EL device are used as the evaporation material. Examples evaporation material, a deposition method according to any one of claims 8 or 9 using the evaporation material for generating light in three primary colors of steam. The vapor of the three primary colors of light is supplied to and mixed with the vapor discharger, and the vapor of the evaporation material discharged from the vapor discharger is discharged toward the film formation target and the film formation target is by moving a plurality of times with respect to the vapor emission device, the method of deposition according to any one of claims 8 to 10 comprising a step of laminating an organic thin film of white tandem structure in the film-forming target on. Using a vapor deposition device with multiple evaporation sources that can be generated by switching the vapors of the three primary colors of light,
The vapors of evaporating materials of the three primary colors of light are supplied to and mixed with the vapor discharger, and the vapors of the evaporating material discharged from the vapor discharger are discharged toward the film formation target and the film is formed. for at least 3 moving times, a deposition method according to any one of claims 8 to 10 comprising the step of forming an organic thin film of the full color to the film-forming target on the object with respect to the vapor emission device.

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