JP5745973B2 - Thin-film solar cell manufacturing apparatus and manufacturing method - Google Patents

Description

  The present invention relates to a manufacturing apparatus and a manufacturing method for a thin film solar cell.

  Solar cells are mainly made of silicon, consisting of single crystal, polycrystal, and amorphous silicon, and are becoming widespread in residential use and business establishments. In the future, further spread is expected. For this reason, future demand for solar cells is expected to increase significantly.

  Current mainstream solar cells have the disadvantage of low energy conversion efficiency. In order to compensate for this drawback, a solar cell is known in which a carbon nanotube structure is provided on a polycrystalline silicon substrate to improve the energy conversion and electron transfer efficiency (see, for example, Patent Document 1).

JP 2009-253296 A

  However, although the solar cell described in Patent Document 1 is excellent in performance, it is not suitable for mass production and cannot cope with an increase in demand predicted in the future. As described above, the solar cell manufacturing method using the carbon nanotube structure as described in Patent Document 1 cannot manufacture a large-area solar cell at low cost and high productivity. It's real.

  In view of the above, an object of the present invention is to provide a manufacturing apparatus and a manufacturing method capable of manufacturing a large-area thin film solar cell using carbon nanotubes at low cost and high productivity.

In order to solve the above-mentioned problems, a method for manufacturing a thin-film solar cell according to claim 1 of the present invention includes a substrate sheet, an electrode sheet, an insulating sheet, a counter electrode sheet, and a transparent sheet that are continuously fed to form a thin-film solar cell. A manufacturing apparatus for continuously manufacturing,
A semiconductor film forming apparatus that generates an n-type semiconductor / p-type semiconductor film on a laminated sheet obtained by laminating an electrode sheet on the substrate sheet;
An insulating layer laminator for laminating an insulating sheet on a part of the semiconductor film generated in the laminated sheet;
A carbon nanotube film forming apparatus for generating a p-type / n-type carbon nanotube film on a semiconductor film formed on the laminated sheet and an insulating sheet laminated on a part of the semiconductor film;
A counter electrode laminator for laminating a counter electrode sheet on the carbon nanotube film produced on the insulating sheet;
The carbon nanotube film produced | generated to the said semiconductor film and the transparent layer laminated device which laminates | stacks a transparent sheet on a counter electrode sheet | seat, and forms a thin film solar cell are provided.

Furthermore, the thin-film solar cell manufacturing apparatus according to claim 2 of the present invention is the thin-film solar cell manufacturing apparatus according to claim 1, wherein the laminated sheet is formed by laminating an electrode sheet on a part of the substrate sheet. And
The substrate sheet is transparent.

A method for manufacturing a thin film solar cell according to claim 3 of the present invention, board sheets Ru sent continuously, the electrode sheet, the insulating sheet, the thin-film solar cell continuously laminating counter electrode sheet and the transparent sheet A manufacturing method for manufacturing,
Generating an n-type semiconductor / p-type semiconductor of the semiconductor film electrode sheet in a part of the upper Kimoto plate sheet laminated sheet obtained by laminating,
Laminating an insulating sheet on a part of the semiconductor film generated in the laminated sheet,
A p-type / n-type carbon nanotube film is produced on the semiconductor film produced on the laminated sheet and the insulating sheet laminated on a part of the semiconductor film ,
Laminating a counter electrode sheet on the carbon nanotube film produced on the insulating sheet,
A thin film solar cell is formed by laminating a transparent sheet on the carbon nanotube film and the counter electrode sheet formed on the semiconductor film .

  According to the above thin film solar cell manufacturing apparatus and manufacturing method, the thin film solar cell is continuously formed with a simple apparatus and method, so that the thin film solar cell with a large area using carbon nanotubes can be manufactured at low cost and high productivity. A battery can be manufactured.

It is side surface sectional drawing which shows schematic structure of the manufacturing apparatus of the thin film solar cell which concerns on the Example of this invention. It is a perspective view of the semiconductor film-forming apparatus and CNT film-forming apparatus in the manufacturing apparatus, (a) is a figure which shows a semiconductor film-forming apparatus, (b) is a figure which shows a CNT film-forming apparatus. It is a bottom view of the lamination sheet in the manufacturing apparatus, and is a figure which shows the state which forms into a film and laminates | stacks on a lamination sheet. It is AA sectional drawing of the thin film solar cell in FIG. It is the perspective view which turned up and down the winding roll in the manufacturing apparatus. It is the perspective view of the thin film solar cell cut | disconnected by the desired length, (a) is the figure as it was cut | disconnected, (b) is the figure sealed by resin processing after cut | disconnecting. It is a perspective view of the see-through type thin film solar cell cut | disconnected by desired length.

[Manufacturing apparatus and manufacturing method of thin film solar cell]
Hereinafter, the manufacturing apparatus which manufactures the thin film solar cell which concerns on the Example of this invention continuously is demonstrated based on drawing.

  In this example, a substrate sheet, a negative electrode sheet (which is an example of an electrode sheet), an insulating sheet, a positive electrode sheet (which is an example of a counter electrode sheet), and a transparent sheet are used as a sheet constituting the thin film solar cell. In any case, a long one having a predetermined width, that is, a belt-like one is used. Among these sheets, as shown in FIG. 3, the insulating sheet I is the narrowest, the positive electrode sheet P is wider than the insulating sheet I, and the substrate sheet K, the negative electrode sheet N, and the transparent sheet T are substantially the same width. And wider than the positive electrode sheet P. By the way, transparent plastic is used for the substrate sheet K and the transparent sheet T, respectively. Moreover, copper foil or aluminum foil is used for the negative electrode sheet N and the positive electrode sheet P, respectively. Further, Kapton (registered trademark) tape, plastic tape, or silica film is used for the insulating sheet I.

  These sheets K, N, I, P, and T are respectively wound around rolls, and in the production of thin film solar cells, the thin film solar cells are drawn out from these rolls and continuously processed and laminated. Once formed, the thin film solar cell is also wound around a roll. That is, the sheets K, N, I, P, and T are pulled out from one of the five unwinding rolls, and a thin film solar cell is continuously formed from the drawn sheets K, N, I, P, and T, The thin film solar cell is wound around one other winding roll. Therefore, the thin film solar cell to be manufactured has a strip shape like the sheets K, N, I, P, and T.

Hereinafter, the manufacturing apparatus which manufactures the said strip | belt-shaped thin film solar cell continuously is demonstrated based on FIGS. 1-3.
As shown in FIG. 1, the manufacturing apparatus includes an apparatus main body 1 provided with an elongated space. The apparatus main body 1 is divided into three rooms by a partition wall 9. Naturally, each partition wall 9 is formed with an upstream communication port 9a and a downstream communication port 9b through which the substrate sheet K can pass.

  That is, in the apparatus main body 1, a supply chamber 2 that is located on one end side of the apparatus main body 1 and is supplied with sheets K, N, I, P, and T constituting the solar cell, and the other end in the apparatus main body 11. A thin film solar cell is collected from the sheets K, N, I, P, T located between the collection chamber 8 for collecting the thin film solar cell formed on the side and the supply chamber 2 and the collection chamber 8. And an intermediate chamber 3 in which the equipment to be formed is arranged. In the following, for convenience, the supply chamber 2 side is referred to as the upstream side, and the collection chamber 8 side is referred to as the downstream side, the back side (left side toward the downstream side) in FIG. 1 is the left side, and the near side (downstream side) in FIG. The right side) is called the right side.

  Inside the supply chamber 2, a substrate unwinding roll 21 around which the substrate sheet K is wound, and a negative electrode unwinding roll disposed on the upstream side of the substrate unwinding roll 21 and around which the negative electrode sheet N is wound. 22, an insulating unwinding roll 23 disposed on the upstream side of the negative electrode unwinding roll 22 and wound with the insulating sheet I, and a positive electrode sheet P wound around the insulating unwinding roll 23. The insulating unwinding roll 24 and the transparent unwinding roll 25 around which the transparent sheet T is wound are provided below the insulating unwinding roll 24. Further, a pressure-bonding roll 26 for laminating the substrate sheet K, the negative electrode sheet N, the insulating sheet I, the positive electrode sheet P, and the transparent sheet T in this order from the top is disposed on the upstream side of the upstream communication port 9a. .

  In the intermediate chamber 3, a processing chamber 4 positioned in the middle and lower portions through which the sheets K, N, I, P, and T pass, and an upstream and downstream direction 5 positioned in the upper side of the processing chamber 4. There is a space divided into two small rooms. Among these five small rooms, the second to fourth small rooms from the upstream side are the first heating chamber 51, the second heating chamber 52, and the third heating chamber 53, respectively. Inside each of the first heating chamber 51, the second heating chamber 52, and the third heating chamber 53, a plurality of (for example, three) electric heaters 54 are disposed above the electric heaters 54, and the electric heaters 54 are arranged. And a gold mirror 55 that reflects the heat of the light downward. Further, the heat of the electric heater 54 is transferred to the inside of the processing chamber 4 at the lower wall portion of the first heating chamber 51, the second heating chamber 52, and the third heating chamber 53 (which is also the upper wall portion of the processing chamber 4). Quartz windows 56 are provided for transmission. That is, the first heating chamber 51, the second heating chamber 52, and the third heating chamber 53 can each be heated up to about 150 ° C. below. As will be described in detail later, a semiconductor film forming apparatus (described later) 36 and a carbon nanotube film forming apparatus (which will be described later but abbreviated as CNT film forming apparatus 37 hereinafter) disposed inside the processing chamber 4 are respectively provided. In addition, the first heating chamber 51 and the second heating chamber 52 are located.

  In the processing chamber 4, the laminated and pressure-bonded sheets K, N, I, P, and T, the substrate sheet K and the negative electrode sheet N, the insulating sheet I, the positive electrode sheet P, and the transparent sheet T The separation roll 31 that is separated into two is disposed downstream of the upstream communication port 9a. In the following, a sheet obtained by laminating the negative electrode sheet N on the substrate sheet K is referred to as laminated sheets K and N, and the laminated sheets K and N are arranged so that the negative electrode sheet N protrudes to the left side of the substrate sheet K. (See FIG. 3). Therefore, the separation roll 31 separates the sheets K, N, I, P, and T from the supply chamber 2 into the laminated sheets K and N, the insulating sheet I, the positive electrode sheet P, and the transparent sheet T.

  Further, in the processing chamber 4, a substrate that guides the laminated sheets K and N (substrate sheet K and negative electrode sheet N) arranged and separated on the downstream side of the separation roll 31 to the upper part in the processing chamber 4. The n-type semiconductor 6 (from the lower side (negative electrode sheet N side) to the negative electrode layer guide roll 40 and the laminated sheets K and N arranged on the downstream side of the substrate negative electrode layer guide roll 40 and guided to the upper part of the processing chamber 4 ( And a semiconductor film forming apparatus 36 for generating (which is an example of a semiconductor film). Further, an insulating layer guide roll 41 that guides the insulating sheet I disposed and separated on the downstream side of the separating roll 31 to the lower side of the laminated sheets K and N, and disposed on the downstream side of the insulating layer guide roll 41 for insulation. An insulating layer turning roll 42 for turning the sheet I upward, and an insulating sheet I stacked on the right side portion of the n-type semiconductor 6 disposed above the insulating layer turning roll 42 and generated by the semiconductor film forming apparatus 36 An insulating layer laminating roll (an example of an insulating layer laminator, see FIG. 3) 43, and a carbon nanotube (CNT) film 7 disposed on the n-type semiconductor 6 and the insulating sheet I disposed on the downstream side of the insulating layer laminating roll 43. And a CNT film forming device 37 for generating In addition, a positive electrode layer guide roll 44 that guides the positive electrode sheet P disposed and separated below the separation roll 31 to the lower side of the insulating sheet I, and a positive electrode layer disposed on the downstream side of the positive electrode layer guide roll 44. A positive electrode layer turning roll 45 that turns the sheet P upward, and a portion of the right side of the carbon nanotube film 7 that is disposed above the positive electrode layer turning roll 45 and is generated by the CNT film forming device 37 so as to protrude from the right side. And a positive electrode layer laminating roll 46 (which is an example of a counter electrode layer laminator, see FIG. 3) for laminating the positive electrode sheet P. The semi-finished product in which the positive electrode sheet P is laminated by the positive electrode layer laminating roll 46 is hereinafter referred to as a semi-finished product sheet. Also, a transparent layer guide roll 47 that guides the transparent sheet T disposed and separated at the lowermost downstream side of the separation roll 31 to the lower side of the positive electrode sheet P, and is disposed downstream of the transparent layer guide roll 47 and is transparent. A transparent layer turning roll 48 that turns the sheet T upward is provided. Further, a semi-product turning roll 49 disposed downstream of the positive electrode layer stacking roll 46 and above the transparent layer turning roll 48 to turn the semi-finished product sheet downward, and the semi-product turning roller 49 and the positive electrode layer stacking roll 46. And a control roll 32 that is disposed between and for controlling the tension and cooling of the semi-finished product sheet. In addition, a product forming roll (an example of a transparent layer laminator) 33 that laminates and presses the transparent sheet T on the lower surface of the semi-finished product sheet is connected to the semi-finished product turning roll 49 and the transparent layer turning roll 48 on the downstream side communication port 9b. A thin film solar cell is formed by laminating and pressing the transparent sheet T on the lower surface of the semi-finished product sheet with the product forming roll 33.

Further, a gas supply pipe 34 for supplying an atmospheric gas (for example, a mixed gas of O ₂ and N ₂ ) into the processing chamber 4 is provided on the lower wall portion below the separation roll 31. Further, a gas discharge pipe 35 for discharging gas from the inside of the processing chamber 4 is provided on the upper wall portion on the downstream side of the third heating chamber 53.

  Incidentally, as shown in FIGS. 2A and 2B, the semiconductor film forming apparatus 36 and the CNT film forming apparatus 37 are both spray application apparatuses and have the same configuration. That is, as shown in FIG. 2A, the semiconductor film forming apparatus 36 guides a semiconductor material from a tank 61 that stores a semiconductor material obtained by dissolving the n-type semiconductor 6 in a solvent, and a hose through the tank 61. It has a spray nozzle 63 for spraying upward by a pump 62 and applying, and a drive device 64 that can move the spray nozzle 63 in the left-right direction. As shown in FIG. 2B, the CNT film forming apparatus 37 also introduces a CNT raw material from a tank 71 that stores a CNT raw material obtained by dissolving the carbon nanotube film 7 in a solvent, and a hose through the tank 71. It has a spray nozzle 73 for spraying upward by a pump 72 and applying, and a drive device 74 that can move the spray nozzle 73 in the left-right direction.

As shown in FIG. 1, the semiconductor film forming apparatus 36 is arranged below the first heating chamber 51 so as to generate the n-type semiconductor 6 after being heated in the first heating chamber 51. The CNT film forming device 37 is also arranged below the second heating chamber 52 so that the carbon nanotube film 7 is generated after being heated in the second heating chamber 52. . That is, by applying a raw material to a heated application target, uneven coating of the raw material can be prevented. On the other hand, the carbon nanotube film 7 generated by the CNT film forming device 37 is p-type when the atmospheric gas inside the processing chamber 4 includes O ₂ and becomes n-type when H ₂ is included. Further, the positive electrode layer laminating roll 46 is disposed downstream from the lower side of the third heating chamber 53 to reliably evaporate and remove the solvent remaining in the generated n-type semiconductor 6 and the carbon nanotube film 7. It is designed to form a semi-finished product sheet.

  Inside the collection chamber 8, a product guide roll 81 disposed downstream of the downstream communication port 9 b and guiding the strip-shaped thin film solar cell from the processing chamber 4 to the downstream side, and downstream of the product guide roll 81 A winding roll 82 (also a product recovery roll) that is disposed on the side and winds the thin film solar cell is provided.

Hereinafter, the operation of the manufacturing apparatus, that is, a method for manufacturing a thin film solar cell will be described with reference to FIGS.
As shown in FIG. 1, in the processing chamber 4, a mixed gas of O ₂ and N ₂ is supplied through a gas supply pipe 34 and discharged through a gas discharge pipe 35 in advance. That is, the mixed gas of O ₂ and N ₂ becomes the atmosphere gas in the processing chamber 4.

  On the other hand, inside the supply chamber 2, the sheets K, N, I, P, and T are pulled out from the respective unwinding rolls 21 to 25, stacked and crimped by the crimping rolls 26, and sent to the processing chamber 4.

  The sheets K, N, I, P, and T sent to the processing chamber 4 are separated into laminated sheets K and N, an insulating sheet I, a positive electrode sheet P, and a transparent sheet T by a separation roll 31. The laminated sheets K and N separated by the separation roll 31 are guided to the upper part in the processing chamber 4 by the substrate negative electrode layer guide roll 40 so that the substrate sheet K is on the upper surface side and the negative electrode sheet N is on the lower surface side. Then, the n-type semiconductor 6 is generated by the semiconductor film forming apparatus 36 (see the semiconductor film forming apparatus 36 in FIG. 3). Further, the insulating sheet I separated by the separation roll 31 is guided below the laminated sheets K and N by the insulating layer guide roll 41 and turned upward by the insulating layer turning roll 42 to be insulated by the insulating layer laminated roll 43. Is laminated on a part of the right side of the n-type semiconductor 6 (see the insulating layer lamination roll 43 in FIG. 3). Then, the carbon nanotube film 7 is generated on the n-type semiconductor 6 and the insulating sheet I by the CNT film forming device 37 (see the CNT film forming device 37 in FIG. 3) and passes below the third heating chamber 53. Thus, the solvent remaining in the n-type semiconductor 6 and the carbon nanotube film 7 is surely evaporated and removed. Further, the positive electrode sheet P separated by the separation roll 31 is guided below the insulating sheet I by the positive electrode layer guide roll 44 and turned upward by the positive electrode layer diverting roll 45, and the positive electrode layer stacking roll 46 produces carbon. A part of the right side of the nanotube film 7 is laminated so as to protrude from the right side to form a semi-finished product sheet (see the positive electrode layer laminating roll 46 in FIG. 3). The semi-finished product sheet is subjected to tension control and cooling by the control roll 32, and is turned downward by the semi-finished product turning roll 49, and the transparent sheet T is laminated on the lower surface by the product forming roll 33, and the thin film solar cell (See the product forming roll 33 in FIG. 3). The AA cross section in the thin film solar cell of FIG. 3 is shown in FIG.

Here, the generation of the n-type semiconductor 6 and the carbon nanotube film 7 will be described in detail. First, the generation of the n-type semiconductor 6 will be described.
The laminated sheets K and N passing through the semiconductor film forming device 36 are heated up to 150 ° C. in the first heating chamber 51 of FIG. 1 and are moved to the left and right by the drive device 64 of FIG. The raw material is sprayed and applied uniformly. Similarly, the sheet that passes through the CNT film forming device 37 (more precisely, the sheet in which the n-type semiconductor 6 is formed on the laminated sheets K and N and the insulating sheet I is laminated) is the second heating chamber 52 in FIG. The CNT raw material is sprayed and uniformly applied by the spray nozzle 73 that moves to the left and right by the driving device 74 of FIG. The generated carbon nanotube film 7 is p-type because the atmospheric gas inside the processing chamber 4 contains O ₂ .

As shown in FIG. 1, inside the collection chamber 8, the thin-film solar cell is guided by the product guide roll 81, wound up by the winding roll 82, and collected.
Thus, according to the said thin film solar cell manufacturing apparatus and manufacturing method, since a strip | belt-shaped thin film solar cell is formed continuously, a large area thin film solar cell can be manufactured with high productivity.

The thin-film solar cell manufacturing apparatus and manufacturing method are simple, and the solar cell to be manufactured does not use rare metals such as indium or platinum, and has an abundant distribution amount. Therefore, a thin film solar cell can be manufactured at low cost.
[Thin film solar cell]
Hereinafter, the thin film solar cell manufactured by the said manufacturing apparatus and manufacturing method is demonstrated based on FIGS.

  FIG. 5 is a perspective view in which the winding roll 82 winding the thin film solar cell is turned upside down. As shown in FIG. 5, since the thin film solar cell to be manufactured has a strip shape, it can be used after being cut by a desired performance or length. Hereinafter, when the cut sheet is referred to as a sheet portion, the cut thin film solar cell is laminated on the substrate sheet K portion and the substrate sheet K portion as shown in FIG. A negative electrode sheet N portion protruding from the left side of the substrate sheet K portion, an n-type semiconductor 6 generated in the substrate sheet K portion and the negative electrode sheet N portion, and an insulating sheet laminated on a part of the right side of the n-type semiconductor 6 The I portion, the p-type carbon nanotube film 7 generated in the n-type semiconductor 6 and the insulating sheet I portion, and the carbon nanotube film 7 generated in the insulating sheet I portion were laminated so as to protrude from the right side. The positive electrode sheet P part is comprised from the carbon nanotube film | membrane 7 produced | generated by the said n-type semiconductor 6, and the transparent sheet T part laminated | stacked on the positive electrode sheet P part.

  Thereby, the cut thin film solar cell is generated in the n-type semiconductor 6 by the light entering from the transparent sheet T part reaching the junction surface between the p-type carbon nanotube film 7 and the n-type semiconductor 6. Electrons are captured in the negative electrode sheet N portion, and holes generated in the p-type carbon nanotube film 7 are captured in the positive electrode sheet P portion, and an electromotive force is generated. Further, in order to improve the durability of the cut thin film solar cell, as shown in FIG. 6B, the upstream and downstream cut surfaces are sealed by resin R processing (or lamination processing). It may be reinforced.

  On the other hand, by making the used negative electrode sheet N narrow to substantially the same width as the positive electrode sheet P, the manufactured thin film solar cell becomes a see-through type, and the cut thin film solar cell has a configuration as shown in FIG. Become. That is, the thin film solar cell in this case includes a substrate sheet K portion, a negative electrode sheet N portion that is laminated on a part of the left side of the substrate sheet K portion and protrudes from the left side of the substrate sheet K portion, and the substrate sheet K. N-type semiconductor 6 produced in the N-type semiconductor 6 and the negative-electrode sheet N part, the insulating sheet I part laminated on the right part of the n-type semiconductor 6, and the p-type produced in the n-type semiconductor 6 and the insulating sheet I part. Type carbon nanotube film 7, positive electrode sheet P portion laminated so as to protrude from the right side in carbon nanotube film 7 generated in insulating sheet I portion, and carbon nanotube film 7 generated in n-type semiconductor 6 And a transparent sheet T portion laminated on the positive electrode sheet P portion.

Thereby, the cut thin film solar cell not only generates an electromotive force due to the light entering from the transparent sheet T part, but can be seen through from one surface to the other surface.
As described above, since the thin film solar cell is obtained in a rolled state, it can be easily transported and stored, and can be used after being cut by a desired length. Can increase the degree of freedom.

Furthermore, the thin film solar cell obtained can be made into a see-through type by making the negative electrode sheet N narrow.
In the above embodiment, the semiconductor film forming apparatus 36 and the CNT film forming apparatus 37 have been described as generating the n-type semiconductor 6 and the p-type carbon nanotube film 7, respectively. A nanotube film may be generated. In this case, a semiconductor material obtained by dissolving a p-type semiconductor in a solvent is used as a semiconductor raw material of the semiconductor film forming apparatus 36, and a gas containing H ₂ is used as an atmospheric gas.

  Moreover, in the said Example, although the semiconductor film-forming apparatus 36 and the CNT film-forming apparatus 37 demonstrated that all were spray coating apparatuses, it is not limited to this, An electrostatic coating apparatus and a roll coater apparatus are used. There may be. Further, the semiconductor film forming apparatus 36 may be a sputtering apparatus. In this case, the first heating chamber 51 disposed above the sputtering apparatus is unnecessary, and in order to maintain the degree of vacuum inside the sputtering apparatus, a sealing portion (such as a labyrinth seal) is inserted into the laminated sheet insertion port in the sputtering apparatus. Is provided.

  Furthermore, although the said Example demonstrated that the transparent plastic was used for the board | substrate sheet | seat K, as long as the thin film solar cell manufactured is not made into a see-through type, you may use a stainless steel foil.

In the above embodiment, the mixed gas containing O ₂ or N ₂ is supplied as the atmospheric gas in order to generate the n-type or p-type carbon nanotube film 7. However, the present invention is limited to these gases. However, it may be an atmospheric gas containing other gases. Further, instead of the atmospheric gas, a carbon nanotube film previously made to be n-type or p-type may be generated.

K substrate sheet N negative electrode sheet I insulating sheet P positive electrode sheet T transparent sheet 1 device main body 4 processing chamber 6 n-type semiconductor 7 carbon nanotube film 8 recovery chamber 33 product forming roll 36 semiconductor film forming device 37 CNT film forming device 43 insulating layer lamination Roll 46 Positive electrode layered roll 82 Winding roll

Claims (3)

A manufacturing apparatus for continuously manufacturing a thin film solar cell by laminating a substrate sheet, an electrode sheet, an insulating sheet, a counter electrode sheet and a transparent sheet which are continuously sent,
A semiconductor film forming apparatus that generates an n-type semiconductor / p-type semiconductor film on a laminated sheet obtained by laminating an electrode sheet on the substrate sheet;
An insulating layer laminator for laminating an insulating sheet on a part of the semiconductor film generated in the laminated sheet;
A carbon nanotube film forming apparatus for generating a p-type / n-type carbon nanotube film on a semiconductor film formed on the laminated sheet and an insulating sheet laminated on a part of the semiconductor film;
A counter electrode laminator for laminating a counter electrode sheet on the carbon nanotube film produced on the insulating sheet;
An apparatus for manufacturing a thin-film solar cell, comprising: a carbon nanotube film formed on the semiconductor film; and a transparent layer stacker that forms a thin-film solar cell by laminating a transparent sheet on a counter electrode sheet. A laminated sheet is formed by laminating an electrode sheet on a part of a substrate sheet,
Thin-film solar cell manufacturing apparatus according to claim 1, wherein the substrate sheet is transparent. Board sheet Ru sent continuously, the electrode sheet, the insulating sheet, the thin-film solar cell to a manufacturing method for continuously producing by laminating counter electrode sheet and the transparent sheet,
Generating an n-type semiconductor / p-type semiconductor of the semiconductor film electrode sheet in a part of the upper Kimoto plate sheet laminated sheet obtained by laminating,
Laminating an insulating sheet on a part of the semiconductor film generated in the laminated sheet,
A p-type / n-type carbon nanotube film is produced on the semiconductor film produced on the laminated sheet and the insulating sheet laminated on a part of the semiconductor film ,
Laminating a counter electrode sheet on the carbon nanotube film produced on the insulating sheet,
A method for producing a thin film solar cell, comprising forming a thin film solar cell by laminating a transparent sheet on a carbon nanotube film and a counter electrode sheet produced on the semiconductor film .

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