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JP5745812B2 - Plasma processing equipment - Google Patents

Plasma processing equipment Download PDF

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JP5745812B2
JP5745812B2 JP2010240867A JP2010240867A JP5745812B2 JP 5745812 B2 JP5745812 B2 JP 5745812B2 JP 2010240867 A JP2010240867 A JP 2010240867A JP 2010240867 A JP2010240867 A JP 2010240867A JP 5745812 B2 JP5745812 B2 JP 5745812B2
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gas
processing chamber
top plate
processing
plasma
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JP2012094690A (en
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飯塚　八城
八城 飯塚
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to TW100138773A priority patent/TWI512780B/en
Priority to US13/282,665 priority patent/US20120103523A1/en
Priority to CN201110332469.1A priority patent/CN102456531B/en
Priority to KR1020110110415A priority patent/KR101287081B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Description

本発明は、プラズマ処理装置に関する。   The present invention relates to a plasma processing apparatus.

従来から、半導体装置の製造分野等においては、半導体ウエハ等の基板に、成膜処理やエッチング処理等の処理を行う装置として、誘導結合プラズマ（ＩＣＰ）を用いるプラズマ処理装置が知られている。   2. Description of the Related Art Conventionally, in the field of manufacturing semiconductor devices and the like, plasma processing apparatuses using inductively coupled plasma (ICP) are known as apparatuses for performing a film forming process or an etching process on a substrate such as a semiconductor wafer.

ＩＣＰを用いたプラズマ処理装置の処理ガス供給構造としては、処理室の上部に高周波コイルを設けたプラズマ処理装置では、例えば、基板の周囲の、高周波コイルと基板の間の空間に、環状の中空管からなる処理ガス供給機構を設け、中空管の内側に設けた複数のガス吹き出し口から基板の上部の空間に処理ガスを噴出させる方式のものが知られている（例えば、特許文献１参照。）。   As a processing gas supply structure of a plasma processing apparatus using ICP, in a plasma processing apparatus in which a high frequency coil is provided in the upper part of a processing chamber, for example, an annular medium is provided in a space around the substrate between the high frequency coil and the substrate. There is known a system in which a processing gas supply mechanism including an empty tube is provided, and processing gas is jetted into a space above the substrate from a plurality of gas outlets provided inside the hollow tube (for example, Patent Document 1). reference.).

また、処理室の側壁部に高周波コイルを設けたプラズマ処理装置では、例えば、処理室の上部中央から基板の上部の空間に処理ガスを噴出させる方式のものが知られている（例えば、特許文献２参照。）。   In addition, in a plasma processing apparatus in which a high-frequency coil is provided on the side wall of a processing chamber, for example, a method in which a processing gas is ejected from the upper center of the processing chamber to the space above the substrate is known (for example, Patent Documents). 2).

さらに、個別にガス供給機構を有する複数のチャネルを有し、複数のチャネル毎に個別に給電されるＲＦコイルを有する構成のプラズマ処理装置が知られている（例えば、特許文献３参照。）。   Further, a plasma processing apparatus having a plurality of channels each having a gas supply mechanism and an RF coil that is individually fed to each of the plurality of channels is known (for example, see Patent Document 3).

上記の処理ガス供給構造は、いずれも穴やスリットの開口によるノズル状の構造を用いた方式である。処理室の上部に高周波コイルを設けたプラズマ処理装置の場合、基板の上部にガス導入するための大きな構造物が存在すると、その構造物に遮られるように基板の処理状態が不均一になる虞がある。また、基板の上部、かつ、高周波コイルの下部にガス拡散室を設けた構成とした場合は、この空間での放電現象を防止する対策が必要となる。さらに、個別にガス供給機構を有する複数のチャネルを有する構成とした場合、処理空間の形状に、チャネルによる凹凸が形成されてしまい、その構造も複雑となる。このため、ガスを噴出させる部位は、基本的に基板の中央部および外周部に制約されていた。   Each of the above processing gas supply structures is a system using a nozzle-like structure with openings of holes and slits. In the case of a plasma processing apparatus provided with a high-frequency coil in the upper part of the processing chamber, if there is a large structure for introducing gas to the upper part of the substrate, the processing state of the substrate may become non-uniform so as to be blocked by the structure. There is. In addition, when the gas diffusion chamber is provided above the substrate and below the high frequency coil, a measure for preventing the discharge phenomenon in this space is required. Furthermore, when it is set as the structure which has several channels which have a gas supply mechanism separately, the unevenness | corrugation by a channel will be formed in the shape of processing space, and the structure will also become complicated. For this reason, the part from which the gas is ejected is basically restricted to the central part and the outer peripheral part of the substrate.

特開２００１−８５４１３号公報JP 2001-85413 A 特許第３８４５１５４号公報Japanese Patent No. 3845154 特開平９−２３７６９８号公報Japanese Patent Laid-Open No. 9-237698

上述したとおり、従来のプラズマ処理装置及びその処理ガス供給構造では、ガスを噴出させる部位が制約されるため、処理ガスの供給状態を制御して処理の面内均一性を向上させることが難しいという問題があった。   As described above, in the conventional plasma processing apparatus and its processing gas supply structure, it is difficult to improve the in-plane uniformity of the processing by controlling the supply state of the processing gas because the part where gas is ejected is restricted. There was a problem.

本発明は、上記従来の事情に対処してなされたもので、従来に比べて処理の面内均一性の向上を図ることのできるプラズマ処理装置を提供しようとするものである。   The present invention has been made in response to the above-described conventional circumstances, and an object of the present invention is to provide a plasma processing apparatus capable of improving in-plane uniformity of processing as compared with the conventional case.

本発明のプラズマ処理装置は、処理チャンバー内に誘導結合プラズマを発生させて前記処理チャンバー内に収容され基板の処理を行うプラズマ処理装置であって、上部開口を有し、容器状に形成された処理チャンバー本体と、直径が異なる複数の環状の誘電体部材と金属部材とを交互に同心状に組み合わせ、前記誘電体部材と前記金属部材との間を気密封止した天板部を有し、前記上部開口を覆うように設けられた上蓋と、前記上蓋の、前記金属部材の部分に配設され、前記処理チャンバー内に処理ガスを供給するための複数のガス導入機構と、前記処理チャンバー外の前記誘電体部材の上部に配設された高周波コイルと、 を具備し、前記天板部がドーム状の形状とされていることを特徴とする。 The plasma processing apparatus of the present invention is a plasma processing apparatus for generating an inductively coupled plasma in a processing chamber and processing the substrate accommodated in the processing chamber, and has an upper opening and is formed in a container shape. A processing chamber body, a plurality of annular dielectric members having different diameters and metal members are concentrically combined alternately, and a top plate portion that hermetically seals between the dielectric member and the metal member, An upper lid provided to cover the upper opening; a plurality of gas introduction mechanisms disposed in the metal member portion of the upper lid for supplying a processing gas into the processing chamber; and an outside of the processing chamber A high-frequency coil disposed on an upper portion of the dielectric member, and the top plate portion has a dome shape .

本発明によれば、従来に比べて処理の面内均一性の向上を図ることのできるプラズマ処理装置を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the plasma processing apparatus which can aim at the improvement of the in-plane uniformity of a process compared with the past can be provided.

本発明の一実施形態に係るプラズマエッチング装置の概略構成を示す断面図。1 is a cross-sectional view showing a schematic configuration of a plasma etching apparatus according to an embodiment of the present invention. 図１のプラズマエッチング装置の要部構成を示す断面図。Sectional drawing which shows the principal part structure of the plasma etching apparatus of FIG. 図１のプラズマエッチング装置の概略構成を示す上面図。The top view which shows schematic structure of the plasma etching apparatus of FIG. 他の実施形態に係るプラズマエッチング装置の概略構成を示す断面図。Sectional drawing which shows schematic structure of the plasma etching apparatus which concerns on other embodiment.

以下、本発明の詳細を、図面を参照して実施形態について説明する。   Hereinafter, details of the present invention will be described with reference to the drawings.

図１は、本発明の一実施形態に係るプラズマ処理装置としてのプラズマエッチング装置１の構成を模式的に示す図である。同図に示すように、プラズマエッチング装置１は、処理チャンバー１０を具備している。処理チャンバー１０は、表面を陽極酸化処理されたアルミニウム等から略円筒状に構成されており、上部開口を有する容器状に形成された処理チャンバー本体１１と、この処理チャンバー本体１１の上部開口を覆うように配設された上蓋１２とからその主要部が構成されている。   FIG. 1 is a diagram schematically showing a configuration of a plasma etching apparatus 1 as a plasma processing apparatus according to an embodiment of the present invention. As shown in the figure, the plasma etching apparatus 1 includes a processing chamber 10. The processing chamber 10 is formed in a substantially cylindrical shape from anodized aluminum or the like on the surface, and covers the processing chamber main body 11 formed in a container shape having an upper opening, and the upper opening of the processing chamber main body 11. The main part is comprised from the upper cover 12 arrange | positioned in this way.

上蓋１２は、表面を陽極酸化処理されたアルミニウム等から構成され開口部１３ａを有する枠体１３と、この枠体１３の開口部１３ａを閉塞するように配設された天板部１４とを有している。   The upper lid 12 includes a frame body 13 having an opening 13a made of aluminum or the like whose surface is anodized, and a top plate section 14 disposed so as to close the opening 13a of the frame body 13. doing.

図２，３にも示すように、天板部１４は、複数の環状の誘電体部材１５ａ〜１５ｃと、金属部材１６ａ〜１６ｃとを同心状に交互に積層させるように組み合わせて構成されている。金属部材１６ａ〜１６ｃのうち、金属部材１６ａ，１６ｂは、環状に形成されており、中央部に配設された金属部材１６ｃは、円板状に形成されている。   As shown in FIGS. 2 and 3, the top plate portion 14 is configured by combining a plurality of annular dielectric members 15 a to 15 c and metal members 16 a to 16 c so as to be alternately stacked concentrically. . Among the metal members 16a to 16c, the metal members 16a and 16b are formed in an annular shape, and the metal member 16c disposed in the center is formed in a disc shape.

そして、中央部に配設された金属部材１６ｃの外側には誘電体部材１５ｃ、誘電体部材１５ｃの外側には金属部材１６ｂ、金属部材１６ｂの外側には誘電体部材１５ｂ、誘電体部材１５ｂの外側には金属部材１６ａ、金属部材１６ａの外側には誘電体部材１５ａが配設されている。そして、誘電体部材１５ａの外側は、枠体１３の開口部１３ａの内壁部と嵌合されている。   A dielectric member 15c is disposed outside the metal member 16c disposed in the central portion, a metal member 16b is disposed outside the dielectric member 15c, and a dielectric member 15b and dielectric member 15b are disposed outside the metal member 16b. A metal member 16a is disposed outside, and a dielectric member 15a is disposed outside the metal member 16a. The outer side of the dielectric member 15 a is fitted with the inner wall portion of the opening 13 a of the frame 13.

本実施形態では、誘電体部材１５ａ〜１５ｃは石英によって構成されているが、例えばセラミックス等の他の誘電体を用いてもよい。また、本実施形態では、金属部材１６ａ〜１６ｃは、陽極酸化処理されたアルミニウムによって構成されているが、例えばステンレス等の他の金属から構成してもよい。   In the present embodiment, the dielectric members 15a to 15c are made of quartz, but other dielectric materials such as ceramics may be used. Moreover, in this embodiment, although the metal members 16a-16c are comprised by the anodized aluminum, you may comprise from other metals, such as stainless steel, for example.

上記の誘電体部材１５ａ〜１５ｃと、金属部材１６ａ〜１６ｃとによって構成された天板部１４は、中央部の高さが高く、周縁部に行くに従って高さが徐々に低くなる外側に向かって凸形状となったドーム状に形成されており、各誘電体部材１５ａ〜１５ｃと、金属部材１６ａ〜１６ｃとの間、及び、最外周に位置する誘電体部材１５ａと枠体１３との間は、気密に封止された状態となっている。   The top plate portion 14 constituted by the dielectric members 15a to 15c and the metal members 16a to 16c has a high central portion, and the height gradually decreases toward the peripheral portion. It is formed in the dome shape which became convex shape, between each dielectric member 15a-15c and metal member 16a-16c, and between the dielectric member 15a located in the outermost periphery, and the frame 13 It is in an airtightly sealed state.

このように、天板部１４をドーム状とすることにより、減圧雰囲気とされる処理チャンバー１０内と外部との気圧差によって、天板部１４が破損することを抑制することができる。なお、誘電体部材１５ａ〜１５ｃと、金属部材１６ａ〜１６ｃとの気密封止は、Ｏリング等のシール材による気密封止の他、例えば、コバール等を中間材として、誘電体部材１５ａ〜１５ｃと金属部材１６ａ〜１６ｃとを接合した構成としてもよい。さらに、誘電体部材１５ａ〜１５ｃの接合面に金属膜を付着させて金属同士を接合する構成としてもよい。   Thus, by making the top plate part 14 into a dome shape, it is possible to prevent the top plate part 14 from being damaged due to a pressure difference between the inside and the outside of the processing chamber 10 in a reduced pressure atmosphere. The dielectric members 15a to 15c and the metal members 16a to 16c are hermetically sealed with a sealing material such as an O-ring, for example, with Kovar or the like as an intermediate material, for example, the dielectric members 15a to 15c. It is good also as a structure which joined metal member 16a-16c. Furthermore, it is good also as a structure which adheres a metal film to the joining surface of dielectric material 15a-15c, and joins metals.

誘電体部材１５ａ〜１５ｃの外側には、高周波コイル１７が配設されている。この高周波コイル１７は、図示しない高周波電源に接続されており、高周波電源から所定周波数、例えば１３．５６ＭＨｚの高周波電力が印加されるようになっている。   A high frequency coil 17 is disposed outside the dielectric members 15a to 15c. The high-frequency coil 17 is connected to a high-frequency power source (not shown), and high-frequency power of a predetermined frequency, for example, 13.56 MHz is applied from the high-frequency power source.

天板部１４の上部には、枠体１３の開口部１３ａの部分を架橋するように梁部材３１が配設されている。この梁部材３１は、図３に示すように、上方から見た形状が、略十字状となるように形成されている。なお、梁部材３１の形状は、十字状に限らず、どのような形状であってもよい。   A beam member 31 is disposed on the top plate portion 14 so as to bridge the opening 13a portion of the frame 13. As shown in FIG. 3, the beam member 31 is formed so that the shape seen from above is substantially a cross shape. The shape of the beam member 31 is not limited to a cross shape, and may be any shape.

また、図１に示すように、梁部材３１の下側には、金属部材１６ａ〜１６ｃに対応して夫々下側に向けて突出する支持部３１ａ〜３１ｃが形成されている。そして、これらの支持部３１ａ〜３１ｃと金属部材１６ａ〜１６ｃとが当接され、ねじ３２によって梁部材３１と金属部材１６ａ〜１６ｃとが固定されている。このようにして、天板部１４が、梁部材３１によって支持されている。   As shown in FIG. 1, support portions 31 a to 31 c that protrude downward are formed on the lower side of the beam member 31 corresponding to the metal members 16 a to 16 c. And these support parts 31a-31c and the metal members 16a-16c are contact | abutted, and the beam member 31 and the metal members 16a-16c are being fixed with the screw | thread 32. FIG. In this way, the top plate portion 14 is supported by the beam member 31.

梁部材３１には、ガス導入口１８ａ〜１８ｃが配設されている。これらのガス導入口１８ａ〜１８ｃは、夫々金属部材１６ａ〜１６ｃ中に配設されたガス流路１９ａ〜１９ｃに接続されている。   The beam member 31 is provided with gas inlets 18a to 18c. These gas inlets 18a to 18c are connected to gas flow paths 19a to 19c disposed in the metal members 16a to 16c, respectively.

図２に示すように、金属部材１６ａ，１６ｂ中に配設されたガス流路１９ａ，１９ｂは、環状に形成された金属部材１６ａ，１６ｂ中に環状に形成された環状ガス流路１９０ａ，１９０ｂと、環状ガス流路１９０ａ，１９０ｂとガス導入口１８ａ，１８ｂとを連通する縦ガス流路１９１ａ，１９１ｂとから構成されている。ガス吐出口２０ａ，２０ｂは、環状ガス流路１９０ａ，１９０ｂに沿って円周方向に等間隔で複数配設されている（図２には１つのみ示してある。）。   As shown in FIG. 2, the gas flow paths 19a and 19b disposed in the metal members 16a and 16b are annular gas flow paths 190a and 190b formed in an annular shape in the metal members 16a and 16b formed in an annular shape. And vertical gas flow paths 191a and 191b communicating with the annular gas flow paths 190a and 190b and the gas inlets 18a and 18b. A plurality of gas discharge ports 20a and 20b are arranged at equal intervals in the circumferential direction along the annular gas flow paths 190a and 190b (only one is shown in FIG. 2).

また、円形の金属部材１６ｃに形成されたガス流路１９ｃは、円形に形成されガス拡散空間とされる円形ガス流路１９０ｃと、円形ガス流路１９０ｃとガス導入口１８ｃとを連通する縦ガス流路１９１ｃとから構成されている。ガス吐出口２０ｃは、円形ガス流路１９０ｃの部分に均等に複数配設されている。   The gas flow path 19c formed in the circular metal member 16c includes a circular gas flow path 190c that is formed in a circular shape and serves as a gas diffusion space, and a vertical gas that communicates the circular gas flow path 190c and the gas introduction port 18c. And a flow path 191c. A plurality of gas discharge ports 20c are equally disposed in the circular gas flow path 190c.

そして、図示しない処理ガス供給源から梁部材３１に配設されたガス導入口１８ａ〜１８ｃに供給された処理ガスが、金属部材１６ａ〜１６ｃ中に配設されたガス流路１９ａ〜１９ｃを経由して、ガス吐出口２０ａ〜２０ｃから処理チャンバー１０内に供給されるようになっている。   Then, the processing gas supplied from the processing gas supply source (not shown) to the gas inlets 18a to 18c provided in the beam member 31 passes through the gas flow paths 19a to 19c provided in the metal members 16a to 16c. The gas discharge ports 20a to 20c are supplied into the processing chamber 10.

図１に示すように、処理チャンバー１０の内部には、天板部１４の下方に位置するように、半導体ウエハ等の基板を載置するための載置台２１が設けられている。したがって、載置台２１の基板載置面と天板部１４とは、対向するように配置されている。載置台２１の基板載置面には、基板を吸着するための図示しない静電チャック等が設けられている。   As shown in FIG. 1, a mounting table 21 for mounting a substrate such as a semiconductor wafer is provided inside the processing chamber 10 so as to be positioned below the top plate portion 14. Therefore, the substrate mounting surface of the mounting table 21 and the top plate part 14 are disposed so as to face each other. An electrostatic chuck or the like (not shown) for attracting the substrate is provided on the substrate placement surface of the placement table 21.

載置台２１には、バイアス電圧印加のための図示しない高周波電源が接続されている。一方、載置台２１と対向するように配置された天板部１４の金属部材１６ａ〜１６ｃは、所定電位、本実施形態では接地電位に接続され、載置台２１に対向する対向電極としての機能を有している。   A high frequency power source (not shown) for applying a bias voltage is connected to the mounting table 21. On the other hand, the metal members 16a to 16c of the top plate portion 14 disposed so as to face the mounting table 21 are connected to a predetermined potential, in this embodiment, a ground potential, and function as a counter electrode facing the mounting table 21. Have.

載置台２１の周囲には、下方に向けて排気するための環状の排気空間２２が設けられており、排気空間２２は、排気口を介して排気装置（いずれも図示せず。）と連通されている。また、載置台２１の周囲には、載置台２１の上方の処理空間２３と、排気空間２２とを仕切るためのバッフル板２４が配設されている。   An annular exhaust space 22 for exhausting downward is provided around the mounting table 21, and the exhaust space 22 communicates with an exhaust device (both not shown) through an exhaust port. ing. A baffle plate 24 for partitioning the processing space 23 above the mounting table 21 and the exhaust space 22 is disposed around the mounting table 21.

さらに、処理チャンバー本体１１の側壁部分には、処理する基板を搬入、搬出するための搬入・搬出口２５が設けられている。この搬入・搬出口２５には、ゲートバルブ等の図示しない開閉機構が設けられている。   Further, a loading / unloading port 25 for loading and unloading a substrate to be processed is provided on the side wall portion of the processing chamber body 11. The loading / unloading port 25 is provided with an opening / closing mechanism (not shown) such as a gate valve.

上記構成の本実施形態のプラズマエッチング装置１では、誘電体部材１５ａ〜１５ｃと、金属部材１６ａ〜１６ｃとを組み合わせて天板部１４を形成し、金属部材１６ａ〜１６ｃの部分から処理ガスを供給し、誘電体部材１５ａ〜１５ｃの部分を高周波コイル１７に対する誘電体窓として機能させるようになっている。   In the plasma etching apparatus 1 of the present embodiment configured as described above, the top plate portion 14 is formed by combining the dielectric members 15a to 15c and the metal members 16a to 16c, and the processing gas is supplied from the portions of the metal members 16a to 16c. The dielectric members 15 a to 15 c are made to function as dielectric windows for the high-frequency coil 17.

したがって、高周波コイル１７の直近にガス拡散室が無い構造となっているため、ガス拡散室内における放電の発生対策を行う必要がない。また、基板の中央部及び周辺部に限定されることなく、処理ガスの噴出位置を基板の径方向の任意の複数の位置に、設定することができるので、処理ガスを基板の上方の処理空間２３に均一に供給して、処理の面内均一性の向上を図ることができる。また、所望により処理ガスを処理空間２３内に不均一に供給してプラズマ処理の状態を任意に制御することもできる。さらに、金属部材１６ａ〜１６ｃの部分を対向電極として作用させることによって、プラズマ処理の制御性を向上させることができる。なお、上記のように、誘電体部材１５ａ〜１５ｃと、金属部材１６ａ〜１６ｃとを組み合わせて天板部１４が形成されているので、誘電体部材１５ａ〜１５ｃと、金属部材１６ａ〜１６ｃとの熱膨張率の差によって、これらの間の気密封止が損なわれる虞がある。このため、天板部１４の温度を所定範囲の温度に維持する温調機構を設けることが好ましい。   Therefore, since there is no gas diffusion chamber in the immediate vicinity of the high-frequency coil 17, it is not necessary to take measures against occurrence of discharge in the gas diffusion chamber. Further, the process gas ejection position can be set at any position in the radial direction of the substrate without being limited to the central portion and the peripheral portion of the substrate. In-plane uniformity of the processing can be improved. Further, if desired, the processing gas can be supplied non-uniformly into the processing space 23 to arbitrarily control the plasma processing state. Furthermore, the controllability of the plasma treatment can be improved by causing the metal members 16a to 16c to act as counter electrodes. In addition, since the top plate part 14 is formed by combining the dielectric members 15a to 15c and the metal members 16a to 16c as described above, the dielectric members 15a to 15c and the metal members 16a to 16c There is a possibility that the hermetic seal between them is impaired due to the difference in thermal expansion coefficient. For this reason, it is preferable to provide a temperature control mechanism that maintains the temperature of the top plate portion 14 within a predetermined range.

上記構成のプラズマエッチング装置１によって、半導体ウエハのプラズマエッチングを行う場合、図示しない開閉機構を開き、搬入・搬出口２５から処理チャンバー１０内に基板を搬入し、載置台２１に載置して静電チャックにより吸着する。   When plasma etching of a semiconductor wafer is performed by the plasma etching apparatus 1 having the above-described configuration, an opening / closing mechanism (not shown) is opened, a substrate is loaded into the processing chamber 10 from the loading / unloading port 25, and placed on the mounting table 21. Adsorbed by the electric chuck.

次いで、搬入・搬出口２５の図示しない開閉機構を閉じ、排気空間２２から図示しない真空ポンプ等によって、処理チャンバー１０内を所定の真空度となるまで真空引する。   Next, the opening / closing mechanism (not shown) of the loading / unloading port 25 is closed, and the inside of the processing chamber 10 is evacuated from the exhaust space 22 by a vacuum pump (not shown) until a predetermined degree of vacuum is reached.

その後、所定流量の所定の処理ガス（エッチングガス）を、処理チャンバー１０内に供給する。この際、ガス導入口１８ａ〜１８ｃから導入された処理ガスが、金属部材１６ａ〜１６ｃ中に配設されたガス流路１９ａ〜１９ｃを経由して、ガス吐出口２０ａ〜２０ｃから処理チャンバー１０内に供給される。   Thereafter, a predetermined processing gas (etching gas) having a predetermined flow rate is supplied into the processing chamber 10. At this time, the processing gas introduced from the gas introduction ports 18a to 18c passes through the gas flow paths 19a to 19c disposed in the metal members 16a to 16c, and enters the processing chamber 10 from the gas discharge ports 20a to 20c. To be supplied.

そして、処理チャンバー１０内の圧力が、所定の圧力に維持された後、高周波コイル１７に所定の周波数の高周波電力が印加される。これにより、処理チャンバー１０内の基板の上方の処理空間２３内には、エッチングガスのＩＣＰプラズマが発生する。また、必要に応じて、載置台２１に、図示しない高周波電源からバイアス用の高周波電圧が印加され、ＩＣＰプラズマによる基板のプラズマエッチングが行われる。   Then, after the pressure in the processing chamber 10 is maintained at a predetermined pressure, high frequency power having a predetermined frequency is applied to the high frequency coil 17. Thereby, ICP plasma of etching gas is generated in the processing space 23 above the substrate in the processing chamber 10. Further, if necessary, a high frequency voltage for bias is applied to the mounting table 21 from a high frequency power source (not shown), and plasma etching of the substrate with ICP plasma is performed.

この時、ガス導入口１８ａ〜１８ｃ、ガス流路１９ａ〜１９ｃ、ガス吐出口２０ａ〜２０ｃから構成される処理ガス供給機構により、処理チャンバー１０内の分散された複数箇所から処理ガスを供給するので、基板に供給される処理ガスをより均一化することができる。また、処理ガス供給機構は、金属部材１６ａ〜１６ｃに設けられており、外部に高周波コイル１７が配設された誘電体部材１５ａ〜１５ｃの部分には、電磁場を遮るような部材が設けられていないので、高周波コイル１７によって処理空間２３に誘導される電磁場が遮られて基板の処理状態が不均一になることも抑制することができる。これによって、プラズマの状態を均一化することができ、基板の各部に均一なエッチング処理を施すことができる。すなわち、処理の面内均一性を向上させることができる。   At this time, the processing gas is supplied from a plurality of dispersed locations in the processing chamber 10 by the processing gas supply mechanism including the gas inlets 18a to 18c, the gas flow paths 19a to 19c, and the gas discharge ports 20a to 20c. The processing gas supplied to the substrate can be made more uniform. The processing gas supply mechanism is provided on the metal members 16a to 16c, and the dielectric members 15a to 15c where the high frequency coil 17 is provided outside are provided with members that block the electromagnetic field. Therefore, it is possible to prevent the processing state of the substrate from becoming non-uniform by blocking the electromagnetic field induced in the processing space 23 by the high frequency coil 17. As a result, the plasma state can be made uniform, and a uniform etching process can be performed on each part of the substrate. That is, the in-plane uniformity of processing can be improved.

そして、所定のプラズマエッチング処理が終了すると、高周波電力の印加及び処理ガスの供給が停止され、上記した手順とは逆の手順で、基板が処理チャンバー１０内から搬出される。   Then, when the predetermined plasma etching process is completed, the application of the high frequency power and the supply of the processing gas are stopped, and the substrate is carried out of the processing chamber 10 by a procedure reverse to the procedure described above.

なお、本発明は上記実施形態に限定されるものではなく、各種の変形が可能であることは勿論である。例えば、上蓋に設けられた天板部１４の形状は、ドーム形状に限らず、図４に示すプラズマエッチング装置１０１のように、天板部１４を平板状としてもよい。この場合、梁部材３１も平板状とし、高周波コイル１７を配設するための溝４０等を設けた構成とすることができる。また、気密に閉塞される金属部材１６ａ〜１６ｃと誘電体部材１５ａ〜１５ｃとの当接面は、垂直面同士を当接させるのではなく、図４に示すように、傾斜面同士を当接させる構成とすることが好ましい。なお、図４において、図１のプラズマエッチング装置１と対応する部分には同一の符号を付して重複した説明は省略する。   In addition, this invention is not limited to the said embodiment, Of course, various deformation | transformation are possible. For example, the shape of the top plate portion 14 provided on the upper lid is not limited to the dome shape, and the top plate portion 14 may be flat like the plasma etching apparatus 101 shown in FIG. In this case, the beam member 31 can also be formed in a flat plate shape and provided with a groove 40 for arranging the high-frequency coil 17. Further, the contact surfaces of the metal members 16a to 16c and the dielectric members 15a to 15c that are hermetically closed do not contact the vertical surfaces but contact the inclined surfaces as shown in FIG. It is preferable to adopt a configuration in which In FIG. 4, parts corresponding to those in the plasma etching apparatus 1 in FIG.

また、上記した実施形態では、天板部１４を構成する誘電体部材１５ａ〜１５ｃ、及び金属部材１６ａ〜１６ｃを夫々３つとした場合について説明したが、誘電体部材１５ａ〜１５ｃ、及び金属部材１６ａ〜１６ｃの数は、３つに限らず、例えば、２つ、或いは４つ以上等幾つであってもよい。   In the above-described embodiment, the case where the number of the dielectric members 15a to 15c and the metal members 16a to 16c constituting the top plate portion 14 is three has been described. However, the dielectric members 15a to 15c and the metal member 16a are described. The number of ˜16c is not limited to three, and may be any number such as two or four or more.

１……プラズマエッチング装置、１０……処理チャンバー、１１……処理チャンバー本体、１２……上蓋、１３……枠体、１３ａ……開口部、１４……天板部、１５ａ〜１５ｃ……誘電体部材、１６ａ〜１６ｃ……金属部材、１７……高周波コイル、１８ａ〜１８ｃ……ガス導入口、１９ａ〜１９ｃ……ガス流路、２０ａ〜２０ｃ……ガス吐出口、２１……載置台。   DESCRIPTION OF SYMBOLS 1 ... Plasma etching apparatus, 10 ... Processing chamber, 11 ... Processing chamber main body, 12 ... Upper lid, 13 ... Frame, 13a ... Opening part, 14 ... Top plate part, 15a-15c ... Dielectric Body member, 16a to 16c ... Metal member, 17 ... High frequency coil, 18a to 18c ... Gas introduction port, 19a to 19c ... Gas flow path, 20a to 20c ... Gas discharge port, 21 ... Mounting table.

Claims (3)

処理チャンバー内に誘導結合プラズマを発生させて前記処理チャンバー内に収容され基板の処理を行うプラズマ処理装置であって、
上部開口を有し、容器状に形成された処理チャンバー本体と、
直径が異なる複数の環状の誘電体部材と金属部材とを交互に同心状に組み合わせ、前記誘電体部材と前記金属部材との間を気密封止した天板部を有し、前記上部開口を覆うように設けられた上蓋と、
前記上蓋の、前記金属部材の部分に配設され、前記処理チャンバー内に処理ガスを供給するための複数のガス導入機構と、
前記処理チャンバー外の前記誘電体部材の上部に配設された高周波コイルと、
を具備し、前記天板部がドーム状の形状とされている
ことを特徴とするプラズマ処理装置。 A plasma processing apparatus for generating inductively coupled plasma in a processing chamber and processing a substrate accommodated in the processing chamber,
A processing chamber body having an upper opening and formed in a container shape;
A plurality of annular dielectric members having different diameters and metal members are alternately concentrically combined to have a top plate portion hermetically sealed between the dielectric member and the metal member, and covers the upper opening. An upper lid provided so that
A plurality of gas introduction mechanisms disposed in the metal member portion of the upper lid for supplying a processing gas into the processing chamber;
A high-frequency coil disposed on the dielectric member outside the processing chamber;
The plasma processing apparatus is characterized in that the top plate has a dome shape . 請求項１記載のプラズマ処理装置であって、
前記上蓋は、前記天板部によって気密に閉塞される開口部を有する枠体を有し、当該枠体には、前記開口部を架橋するように梁部材が配設され、前記天板部は、前記金属部材の部分において前記梁部材に支持されている
ことを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 1,
The upper lid includes a frame having an opening that is airtightly closed by the top plate, and a beam member is disposed on the frame so as to bridge the opening, and the top plate is The plasma processing apparatus is supported by the beam member in the metal member portion. 請求項１又は２記載のプラズマ処理装置であって、
前記上蓋が、温調機構を具備していることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 1 or 2 ,
The plasma processing apparatus, wherein the upper lid includes a temperature control mechanism.
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