JP5741581B2 - Transparent conductive film and organic electroluminescence element - Google Patents
Transparent conductive film and organic electroluminescence element Download PDFInfo
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- JP5741581B2 JP5741581B2 JP2012526389A JP2012526389A JP5741581B2 JP 5741581 B2 JP5741581 B2 JP 5741581B2 JP 2012526389 A JP2012526389 A JP 2012526389A JP 2012526389 A JP2012526389 A JP 2012526389A JP 5741581 B2 JP5741581 B2 JP 5741581B2
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- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
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- 125000006678 phenoxycarbonyl group Chemical group 0.000 description 1
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- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 125000000587 piperidin-1-yl group Chemical group [H]C1([H])N(*)C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
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- 239000002985 plastic film Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000075 poly(4-vinylpyridine) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
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- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- DOYOPBSXEIZLRE-UHFFFAOYSA-N pyrrole-3-carboxylic acid Chemical compound OC(=O)C=1C=CNC=1 DOYOPBSXEIZLRE-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
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- 230000007261 regionalization Effects 0.000 description 1
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- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
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- 125000005420 sulfonamido group Chemical group S(=O)(=O)(N*)* 0.000 description 1
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
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- 150000003568 thioethers Chemical class 0.000 description 1
- HERSKCAGZCXYMC-UHFFFAOYSA-N thiophen-3-ol Chemical compound OC=1C=CSC=1 HERSKCAGZCXYMC-UHFFFAOYSA-N 0.000 description 1
- MPKQTNAUFAZSIJ-UHFFFAOYSA-N thiophene-3,4-diol Chemical compound OC1=CSC=C1O MPKQTNAUFAZSIJ-UHFFFAOYSA-N 0.000 description 1
- GSXCEVHRIVLFJV-UHFFFAOYSA-N thiophene-3-carbonitrile Chemical compound N#CC=1C=CSC=1 GSXCEVHRIVLFJV-UHFFFAOYSA-N 0.000 description 1
- YNVOMSDITJMNET-UHFFFAOYSA-N thiophene-3-carboxylic acid Chemical compound OC(=O)C=1C=CSC=1 YNVOMSDITJMNET-UHFFFAOYSA-N 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical group CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001456 vanadium ion Inorganic materials 0.000 description 1
- 229920006163 vinyl copolymer Polymers 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/282—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/285—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing a polyether chain in the alcohol moiety
- C08F220/287—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing a polyether chain in the alcohol moiety and containing polypropylene oxide in the alcohol moiety
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Non-Insulated Conductors (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
Description
本発明は液晶表示素子、有機発光素子、無機電界発光素子、太陽電池、電磁波シールド、電子ペーパー、タッチパネル等の各種分野において好適に用いることができる透明電極、さらに該透明電極を用いた有機エレクトロルミネッセンス素子(以後、有機EL素子ともいう)に関する。 The present invention is a transparent electrode that can be suitably used in various fields such as a liquid crystal display element, an organic light emitting element, an inorganic electroluminescent element, a solar cell, an electromagnetic wave shield, electronic paper, and a touch panel, and further an organic electroluminescence using the transparent electrode The present invention relates to an element (hereinafter also referred to as an organic EL element).
近年、薄型TV需要の高まりに伴い、液晶・プラズマ・有機エレクトロルミネッセンス・フィールドエミッション等、各種方式のディスプレイ技術が開発されている。これら表示方式の異なる何れのディスプレイにおいても、透明電極は必須の構成技術となっている。また、テレビ以外でも、タッチパネルや携帯電話、電子ペーパー、各種太陽電池、各種エレクトロルミネッセンス調光素子においても、透明電極は欠くことのできない技術要素となっている。 In recent years, various types of display technologies such as liquid crystal, plasma, organic electroluminescence, and field emission have been developed in response to the increasing demand for thin TVs. In any of these displays with different display methods, the transparent electrode is an essential constituent technology. In addition to televisions, transparent electrodes are an indispensable technical element in touch panels, mobile phones, electronic paper, various solar cells, and various electroluminescence light control elements.
従来透明電極は、ガラスや透明なプラスチックフィルム等の透明基材上に、インジウム−スズの複合酸化物(ITO)膜を真空蒸着法やスパッタリング法で製膜したITO透明電極が主に使用されてきた。しかし、ITOに用いられているインジウムはレアメタルであり、且つ価格の高騰により、脱インジウムが望まれている。また、ディスプレイの大画面化、生産性向上に伴い、フレキシブル基板を用いたロール to ロールの生産技術が所望されている。 Conventionally, an ITO transparent electrode in which a composite oxide (ITO) film of indium-tin is formed on a transparent substrate such as glass or a transparent plastic film by a vacuum deposition method or a sputtering method has been mainly used. It was. However, indium used in ITO is a rare metal and removal of indium is desired due to the rising price. Also, roll-to-roll production technology using a flexible substrate has been desired along with an increase in display screen and productivity.
近年、このような大面積かつ低抵抗値が要求される製品にも対応できるよう、パターン状に形成された金属細線に導電性ポリマー等の透明導電膜を積層し、電流の面均一性と高い導電性を併せ持つ透明導電フィルムが開発されている(例えば、特許文献1、2参照)。しかしながら、このような構成では、有機電子デバイスのリークの原因となる金属細線の凹凸を、導電性ポリマー等の透明導電膜でなだらかにする必要があり、導電性ポリマーの厚膜化が必須となる。しかし、導電性ポリマーは可視光領域に吸収を有するため、厚膜化すると、透明電極の透明性が著しく低下してしまうという課題を有していた。 In recent years, a transparent conductive film such as a conductive polymer is laminated on a thin metal wire formed in a pattern so that it can be used for products requiring such a large area and a low resistance value, and the surface uniformity of current is high. A transparent conductive film having both conductivity has been developed (see, for example, Patent Documents 1 and 2). However, in such a configuration, it is necessary to smooth the irregularities of the fine metal wires that cause leakage of the organic electronic device with a transparent conductive film such as a conductive polymer, and it is essential to increase the thickness of the conductive polymer. . However, since the conductive polymer has absorption in the visible light region, there is a problem that when the film is thickened, the transparency of the transparent electrode is significantly lowered.
また、導電性と透明性を両立するとして、細線構造部上へ導電性ポリマーと絶縁性ポリマーの混合物を積層する技術が開示されている(例えば、特許文献3)。しかし、絶縁性ポリマーの添加は導電率の低下や導電性ポリマーへの相溶性の観点からヘイズ等の光学性能の劣化を引き起こすという課題を有していた。 Moreover, the technique which laminates | stacks the mixture of a conductive polymer and an insulating polymer on a thin wire | line structure part is disclosed as making electroconductivity and transparency compatible (for example, patent document 3). However, the addition of an insulating polymer has a problem that it causes deterioration of optical performance such as haze from the viewpoint of a decrease in conductivity and compatibility with the conductive polymer.
更に、導電性ポリマーと相溶する高分子として、ポリビニルピロリドン(PVP)、ポリ(ビニルピリジン)とポリ(酢酸ビニル)とのコポリマー(PVPy−VAc)、ポリメタクリル酸(PMAA)、ポリ(ヒドロキシエチルアクリレート)とポリ(メタクリル酸)とのコポリマー(PHEA−MAA)、ポリ(2−ヒドロキシエチルメタクリレート)、ポリビニルブチラール(PVB)とからなる群から選択されたポリマー又はコポリマーが開示されている(例えば、特許文献4)。しかし、これらのポリマーを用いた場合、膜強度不足のため、蒸着やスピンコートによる積層を行った場合膜表面が乱れ、有機電子デバイスを作製するとリークが発生するという課題を有していた。 Furthermore, as a polymer compatible with the conductive polymer, polyvinylpyrrolidone (PVP), a copolymer of poly (vinyl pyridine) and poly (vinyl acetate) (PVPy-VAc), polymethacrylic acid (PMAA), poly (hydroxyethyl) A polymer or copolymer selected from the group consisting of (acrylate) and poly (methacrylic acid) copolymer (PHEA-MAA), poly (2-hydroxyethyl methacrylate), polyvinyl butyral (PVB) is disclosed (eg, Patent Document 4). However, when these polymers are used, since the film strength is insufficient, the film surface is disturbed when lamination is performed by vapor deposition or spin coating, and leakage occurs when an organic electronic device is manufactured.
更に、導電性ポリマー等の透明導電膜を用いる場合、その透明導電膜中に水分が残留していると、有機電子デバイスの性能を劣化させることが知られており、透明導電膜中の水分除去が必須となる。しかし、透明基板についてフレキシブル性やコスト面から透明フィルムが用いられることが多くなってきている近年において、導電性ポリマー等の透明導電膜をフィルムが変形しないガラス転移温度Tg以下の低温で加熱すると、透明導電膜中に水分が残留してしまい、透明導電膜の乾燥が課題であった。 Furthermore, when a transparent conductive film such as a conductive polymer is used, it is known that if water remains in the transparent conductive film, the performance of the organic electronic device is deteriorated. Is essential. However, in recent years, transparent films have been increasingly used from the viewpoint of flexibility and cost for transparent substrates, and when a transparent conductive film such as a conductive polymer is heated at a low temperature below the glass transition temperature Tg at which the film does not deform, Moisture remained in the transparent conductive film, and drying of the transparent conductive film was a problem.
本発明は上記課題に鑑みなされたものであり、本発明の目的は、透明性、導電性、膜強度に優れると共に、高温、高湿度環境下においても透明性、導電性、膜強度の劣化が少なく、安定性、発光均一性に優れ、かつ発光均一性の劣化が少なく発光寿命に優れる有機EL素子を与える透明電極を提供することにある。 The present invention has been made in view of the above-mentioned problems, and the object of the present invention is excellent in transparency, conductivity, and film strength, as well as deterioration in transparency, conductivity, and film strength even in a high temperature and high humidity environment. An object of the present invention is to provide a transparent electrode that provides an organic EL device that is less in stability, excellent in light emission uniformity, and less in light emission uniformity and excellent in light emission life.
さらに、当該電極を用いた発光均一性が高く、発光均一性の劣化が少なく寿命に優れる有機EL素子を提供することにある。 It is another object of the present invention to provide an organic EL element that has high emission uniformity using the electrode, has little deterioration in emission uniformity, and has an excellent lifetime.
これまで透明導電膜塗布液としては、導電性と透過率を両立させるために3,4−ポリエチレンジオキシチオフェンポリスルホネート(PEDOT/PSS)等の水分散性導電性ポリマーと水溶性バインダーを含有する組成物が開発されてきた。ここにおいて、水溶性ポリマーとしては水分散性導電性ポリマーとの相溶性の観点から、親水性のバインダーが検討されてきた。しかし、透明基板としてフレキシブル性の要求が高まり、ポリエチレンテレフタレート等の樹脂フィルムを使用すると、フィルム変形を避けるとの観点から乾燥温度がガラス基板よりも低温となる。その結果、親水性バインダーの影響で膜中からの水分除去が困難になり、これらの透明導電膜を用いた素子性能を著しく劣化させていた。これらの現象を改良すべく鋭意検討した結果、バインダーの繰り返し単位中にヒドロキシ基を有する構造単位とヒドロキシ基を含有しない構造単位を含むバインダー樹脂を用いる本発明の構成に至った。 Conventionally, the transparent conductive film coating solution contains a water-dispersible conductive polymer such as 3,4-polyethylenedioxythiophene polysulfonate (PEDOT / PSS) and a water-soluble binder in order to achieve both conductivity and transmittance. Compositions have been developed. Here, hydrophilic binders have been studied as water-soluble polymers from the viewpoint of compatibility with water-dispersible conductive polymers. However, the demand for flexibility as a transparent substrate increases, and when a resin film such as polyethylene terephthalate is used, the drying temperature is lower than that of the glass substrate from the viewpoint of avoiding film deformation. As a result, it was difficult to remove moisture from the film due to the influence of the hydrophilic binder, and the device performance using these transparent conductive films was significantly deteriorated. As a result of diligent studies to improve these phenomena, the present invention has been completed using a binder resin containing a structural unit having a hydroxy group and a structural unit not containing a hydroxy group in the repeating unit of the binder.
即ち、本発明の課題が、本発明構成の如く、第2導電層に、繰り返し単位中にヒドロキシ基を有する構造単位とヒドロキシ基を含有しない構造単位を含むバインダー樹脂を含有させることにより達成できることが判明し、本発明に至った。 That is, the object of the present invention can be achieved by including a binder resin containing a structural unit having a hydroxy group in a repeating unit and a structural unit not containing a hydroxy group in the second conductive layer, as in the configuration of the present invention. As a result, the present invention has been achieved.
本発明は第2導電層に導電性ポリマーとヒドロキシ基数をコントロールしたバインダー樹脂を用いることで透明導電膜の透明性と導電性を両立し、且つ膜強度に優れ、更に高温、高湿度環境下における環境試験後でも高い導電性と透明性及び良好な膜強度を併せ持つ、安定性の優れた透明電極及び該透明電極を用いた高寿命の有機エレクトロルミネッセンス素子が、得られることを見出したものである。 The present invention uses a conductive polymer and a binder resin in which the number of hydroxy groups is controlled for the second conductive layer to achieve both transparency and conductivity of the transparent conductive film, and excellent film strength, and in a high temperature and high humidity environment. It has been found that a highly stable transparent electrode and a long-life organic electroluminescence device using the transparent electrode, which have both high conductivity, transparency and good film strength even after an environmental test, can be obtained. .
本発明の目的は、下記の構成を採ることにより達成される。 The object of the present invention is achieved by adopting the following configuration.
(1)
基材上にパターン状に形成された金属材料からなる第1導電層と、導電性ポリマーを含有する第2導電層を有する透明導電膜において、前記第2導電層に下記一般式(I)で表されるヒドロキシ基を有する構造単位と、下記一般式(II)で表されるヒドロキシ基を有せずかつエステル又はアミド結合を有する構造単位とを含むバインダー樹脂を含有することを特徴とする透明導電膜。
(1)
In a transparent conductive film having a first conductive layer made of a metal material formed in a pattern on a substrate and a second conductive layer containing a conductive polymer, the second conductive layer is represented by the following general formula (I) A transparent resin containing a binder resin comprising a structural unit having a hydroxy group and a structural unit having no hydroxy group and having an ester or amide bond represented by the following general formula (II): Conductive film.
〔式中、Rは水素原子、メチル基を表し、Qは−C(=O)O−、−C(=O)NRa−を表す。Raは水素原子、アルキル基を表し、Aは置換或いは無置換アルキレン基、−(CH2CHRbO)x−CH2CHRb−を表し、Rbは水素原子、アルキル基を示し、xは平均繰り返しユニット数を表し、1〜100の数である。〕[Wherein, R represents a hydrogen atom or a methyl group, and Q represents —C (═O) O— or —C (═O) NRa—. Ra represents a hydrogen atom or an alkyl group, A represents a substituted or unsubstituted alkylene group, — (CH 2 CHRbO) x —CH 2 CHRb—, Rb represents a hydrogen atom or an alkyl group, and x represents the average number of repeating units. And is a number from 1 to 100. ]
〔式中、Rは水素原子、メチル基を表し、Qは−C(=O)O−、−C(=O)NRa−を表す。Raは水素原子、アルキル基を表し、Aは置換或いは無置換アルキレン基、−(CH2CHRbO)x−CH2CHRb−を表し、Rbは水素原子、アルキル基を表す。xは平均繰り返しユニット数を表し、1〜100の数である。yは0、1を表す。Zは、水素原子、アルコキシ基、−O−C(=O)−Rc、−O−SO2−Rd、−O−SiRe3を表す。Rc、Rd、Reは置換或いは無置換のアルキル基、またはアリール基を表す。但し、RaとZが結合してN−A2と共にモルホリン環を形成しても良い。〕
(2)
前記バインダー樹脂中の一般式(I)のモル比が10〜50%であることを特徴とする前記(1)記載の透明導電膜。
[Wherein, R represents a hydrogen atom or a methyl group, and Q represents —C (═O) O— or —C (═O) NRa—. Ra represents a hydrogen atom or an alkyl group, A represents a substituted or unsubstituted alkylene group,-(CH2CHRbO) x-CH2CHRb-, and Rb represents a hydrogen atom or an alkyl group. x represents the average number of repeating units and is a number from 1 to 100. y represents 0 or 1; Z represents a hydrogen atom, an alkoxy group, —O—C (═O) —Rc, —O—SO 2 —Rd, or —O—SiRe 3. Rc, Rd, and Re represent a substituted or unsubstituted alkyl group or an aryl group. However, Ra and Z may be combined to form a morpholine ring with N-A2. ]
( 2 )
The transparent conductive film according to (1) above, wherein the molar ratio of the general formula (I) in the binder resin is 10 to 50%.
(3)
前記(1)又は(2)記載の透明導電膜を用いたことを特徴とする有機エレクトロルミネッセンス素子。
( 3 )
An organic electroluminescence device using the transparent conductive film according to (1) or (2) .
本発明の上記手段により、透明性、導電性、膜強度に優れると共に、高温、高湿度環境下においても透明性、導電性、膜強度の劣化が少なく、安定性、発光均一性に優れ、かつ発光均一性の劣化が少なく発光寿命に優れる有機EL素子を与える透明電極を提供できる。 By the above means of the present invention, the transparency, conductivity and film strength are excellent, and transparency, conductivity and film strength are hardly deteriorated even in a high temperature and high humidity environment, and stability and light emission uniformity are excellent. It is possible to provide a transparent electrode that provides an organic EL device that has little emission uniformity deterioration and excellent emission lifetime.
さらに、当該電極を用いた発光均一性が高く、発光均一性の劣化が少なく寿命に優れる有機EL素子を提供できる。 Furthermore, it is possible to provide an organic EL element that has high emission uniformity using the electrode, has little deterioration in emission uniformity, and has an excellent lifetime.
以下、本発明を実施するための形態について説明する。 Hereinafter, modes for carrying out the present invention will be described.
本発明の構成の透明導電膜の一例を図解した概略図を示すと図1の如くである。 FIG. 1 is a schematic diagram illustrating an example of the transparent conductive film having the structure of the present invention.
図1(a)は、透明導電膜の上面図であり、図1(b)は、図1(a)のA−A′線断面図を示す。 FIG. 1A is a top view of the transparent conductive film, and FIG. 1B is a cross-sectional view taken along line AA ′ of FIG.
図1において、1はパターン状に形成された金属材料からなる第1導電層、2は導電性ポリマーを含有する第2導電層、3は基材を示す。本発明の構成における特徴は、第2導電層にヒドロキシ基を有する構造単位と、ヒドロキシ基を有せずかつエステル又はアミド結合を有する構造単位とを含むバインダー樹脂を含有する。 In FIG. 1, 1 is a first conductive layer made of a metal material formed in a pattern, 2 is a second conductive layer containing a conductive polymer, and 3 is a substrate. The characteristic in the structure of this invention contains the binder resin containing the structural unit which has a hydroxyl group in a 2nd conductive layer, and the structural unit which does not have a hydroxyl group and has an ester or amide bond.
《第2導電層》
〈バインダー樹脂〉
本発明に係るバインダー樹脂とは、25℃の水100gに0.001g程度以上溶解するバインダー樹脂であることが好ましく、具体的には下記の構造を有するもので酸性基中のOHを有するもの等は含まない。水への溶解性の程度は、ヘイズメーター、濁度計で測定することができる。<< Second conductive layer >>
<Binder resin>
The binder resin according to the present invention is preferably a binder resin that dissolves about 0.001 g or more in 100 g of water at 25 ° C., and specifically has the following structure and has OH in an acidic group, etc. Is not included. The degree of solubility in water can be measured with a haze meter or a turbidimeter.
本発明に係るバインダー樹脂としては透明であることが好ましく、具体的には一般式(I)で表される構造単位と一般式(II)で表される構造単位を含有する構造を有するものが望ましい。 The binder resin according to the present invention is preferably transparent, and specifically has a structure containing a structural unit represented by the general formula (I) and a structural unit represented by the general formula (II). desirable.
本発明一般式(I)で表されるヒドロキシ基を有する構造単位において、Rは水素原子、メチル基を表す。また、Qは−C(=O)O−、−C(=O)NRa−を表し、Raは水素原子、アルキル基を表す。アルキル基は、例えば炭素原子数1〜5の直鎖、或いは分岐アルキル基が好ましく、より好ましくはメチル基である。また、これらのアルキル基は置換基で置換されていても良い。これら置換基の例としては、シクロアルキル基、アリール基、ヘテロシクロアルキル基、ヘテロアリール基、ヒドロキシ基、ハロゲン原子、アルコキシ基、アルキルチオ基、アリールチオ基、シクロアルコキシ基、アリールオキシ基、アシル基、アルキルカルボンアミド基、アリールカルボンアミド基、アルキルスルホンアミド基、アリールスルホンアミド基、ウレイド基、アラルキル基、ニトロ基、アルコキシカルボニル基、アリールオキシカルボニル基、アラルキルオキシカルボニル基、アルキルカルバモイル基、アリールカルバモイル基、アルキルスルファモイル基、アリールスルファモイル基、アシルオキシ基、アルケニル基、アルキニル基、アルキルスルホニル基、アリールスルホニル基、アルキルオキシスルホニル基、アリールオキシスルホニル基、アルキルスルホニルオキシ基、アリールスルホニルオキシ基等である。 In the structural unit having a hydroxy group represented by formula (I) of the present invention, R represents a hydrogen atom or a methyl group. Q represents —C (═O) O— or —C (═O) NRa—, and Ra represents a hydrogen atom or an alkyl group. The alkyl group is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and more preferably a methyl group. These alkyl groups may be substituted with a substituent. Examples of these substituents include cycloalkyl groups, aryl groups, heterocycloalkyl groups, heteroaryl groups, hydroxy groups, halogen atoms, alkoxy groups, alkylthio groups, arylthio groups, cycloalkoxy groups, aryloxy groups, acyl groups, Alkylcarbonamide group, arylcarbonamide group, alkylsulfonamide group, arylsulfonamide group, ureido group, aralkyl group, nitro group, alkoxycarbonyl group, aryloxycarbonyl group, aralkyloxycarbonyl group, alkylcarbamoyl group, arylcarbamoyl group , Alkylsulfamoyl group, arylsulfamoyl group, acyloxy group, alkenyl group, alkynyl group, alkylsulfonyl group, arylsulfonyl group, alkyloxysulfonyl group, aryl Kishisuruhoniru group, an alkylsulfonyloxy group, an an aryl sulfonyloxy group.
上記シクロアルキル基の炭素原子数は、3〜20であることが好ましく、3〜12であることがより好ましく、3〜8であることが更に好ましい。シクロアルキル基の例としては、シクロプロピル基、シクロブチル基、シクロペンチル基及びシクロヘキシル基が含まれる。上記アルコキシ基は、分岐を有していてもよく、炭素原子数は1〜20であることが好ましく、1〜12であることがより好ましく、1〜6であることが更に好ましく、1〜4であることが最も好ましい。アルコキシ基の例としては、メトキシ基、エトキシ基、2−メトキシエトキシ基、2−メトキシ−2−エトキシエトキシ基、ブチルオキシ基、ヘキシルオキシ基及びオクチルオキシ基が含まれ、好ましくはエトキシ基である。上記アルキルチオ基は、分岐を有していてもよく、炭素原子数は1〜20であることが好ましく、1〜12であることがより好ましく、1〜6であることが更に好ましく、1〜4であることが最も好ましい。アルキルチオ基の例としては、メチルチオ基、エチルチオ基等が含まれる。上記アリールチオ基の炭素数は、6〜20であることが好ましく、6〜12であることが更に好ましい。アリールチオ基の例にはフェニルチオ基及びナフチルチオ基等が含まれる。上記シクロアルコキシ基の炭素原子数は、3〜12であることが好ましく、より好ましくは3〜8である。シクロアルコキシ基の例には、シクロプロポキシ基、シクロブチロキシ基、シクロペンチロキシ基及びシクロヘキシロキシ基が含まれる。上記アリール基の炭素原子数は6〜20であることが好ましく、6〜12であることが更に好ましい。アリール基の例にはフェニル基及びナフチル基が含まれる。上記アリールオキシ基の炭素原子数は6〜20であることが好ましく、6〜12であることが更に好ましい。アリールオキシ基の例にはフェノキシ基及びナフトキシ基が含まれる。上記ヘテロシクロアルキル基の炭素原子数は、2〜10であることが好ましく、3〜5であることが更に好ましい。ヘテロシクロアルキル基の例にはピペリジノ基、ジオキサニル基及びモルホリノ基が含まれる。上記ヘテロアリール基の炭素原子数は、3〜20であることが好ましく、3〜10であることが更に好ましい。ヘテロアリール基の例にはチエニル基、ピリジル基が含まれる。上記アシル基の炭素原子数は1〜20であることが好ましく、1〜12であることが更に好ましい。アシル基の例にはホルミル基、アセチル基及びベンゾイル基が含まれる。上記アルキルカルボンアミド基の炭素原子数は1〜20であることが好ましく、1〜12であることが更に好ましい。アルキルカルボンアミド基の例にはアセトアミド基等が含まれる。上記アリールカルボンアミド基の炭素原子数は1〜20であることが好ましく、1〜12であることが更に好ましい。アリールカルボンアミド基の例にはベンズアミド基等が含まれる。上記アルキルスルホンアミド基の炭素原子数は1〜20であることが好ましく、1〜12であることが更に好ましい。スルホンアミド基の例にはメタンスルホンアミド基等が含まれる上記アリールスルホンアミド基の炭素原子数は1〜20であることが好ましく、1〜12であることが更に好ましい。アリールスルホンアミド基の例には、ベンゼンスルホンアミド基及びp−トルエンスルホンアミドが基含まれる。上記アラルキル基の炭素原子数は7〜20であることが好ましく、7〜12であることが更に好ましい。アラルキル基の例にはベンジル基、フェネチル基及びナフチルメチル基が含まれる。上記アルコキシカルボニル基の炭素原子数は1〜20であることが好ましく、2〜12であることが更に好ましい。アルコキシカルボニル基の例にはメトキシカルボニル基が含まれる。上記アリールオキシカルボニル基の炭素原子数は7〜20であることが好ましく、7〜12であることが更に好ましい。アリールオキシカルボニル基の例にはフェノキシカルボニル基が含まれる。上記アラルキルオキシカルボニル基の炭素原子数は8〜20であることが好ましく、8〜12であることが更に好ましい。アラルキルオキシカルボニル基の例にはベンジルオキシカルボニル基が含まれる。上記アシルオキシ基の炭素原子数は1〜20であることが好ましく、2〜12であることが更に好ましい。アシルオキシ基の例にはアセトキシ基及びベンゾイルオキシ基が含まれる。上記アルケニル基の炭素原子数は2〜20であることが好ましく、2〜12であることが更に好ましい。アルケニル基の例に、ビニル基、アリル基及びイソプロペニル基が含まれる。上記アルキニル基の炭素原子数は2〜20であることが好ましく、2〜12であることが更に好ましい。アルキニル基の例にはエチニル基が含まれる。上記アルキルスルホニル基の炭素原子数は1〜20であることが好ましく、1〜12であることが更に好ましい。アルキルスルホニル基の例に、メチルスルホニル基、エチルスルホニル基が含まれる。上記アリールスルホニル基の炭素原子数は6〜20であることが好ましく、6〜12であることが更に好ましい。アリールスルホニル基の例に、フェニルスルホニル基、ナフチルスルホニル基が含まれる。上記アルキルオキシスルホニル基の炭素原子数は1〜20あることが好ましく、1〜12であることが更に好ましい。アルキルオキシスルホニル基の例に、メトキシスルホニル基、エトキシスルホニル基が含まれる。上記アリールオキシスルホニル基の炭素原子数は6〜20であることが好ましく、6〜12であることが更に好ましい。アリールオキシスルホニル基の例に、フェノキシスルホニル基、ナフトキシスルホニル基が含まれる。上記アルキルスルホニルオキシ基の炭素原子数は1〜20であることが好ましく、1〜12であることが更に好ましい。アルキルスルホニルオキシ基の例に、メチルスルホニルオキシ基、エチルスルホニルオキシ基が含まれる。上記アリールスルホニルオキシ基の炭素原子数は6〜20であることが好ましく、6〜12であることが更に好ましい。アリールスルホニルオキシ基の例に、フェニルスルホニルオキシ基、ナフチルスルホニルオキシ基が含まれる。置換基は同一でも異なっていても良く、これら置換基が更に置換されても良い。 The number of carbon atoms of the cycloalkyl group is preferably 3-20, more preferably 3-12, and still more preferably 3-8. Examples of the cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, and a cyclohexyl group. The alkoxy group may have a branch, and the number of carbon atoms is preferably 1 to 20, more preferably 1 to 12, still more preferably 1 to 6, and further preferably 1 to 4. Most preferably. Examples of the alkoxy group include a methoxy group, an ethoxy group, a 2-methoxyethoxy group, a 2-methoxy-2-ethoxyethoxy group, a butyloxy group, a hexyloxy group and an octyloxy group, and preferably an ethoxy group. The alkylthio group may have a branch, and the number of carbon atoms is preferably 1 to 20, more preferably 1 to 12, still more preferably 1 to 6, and further preferably 1 to 4. Most preferably. Examples of the alkylthio group include a methylthio group and an ethylthio group. The arylthio group preferably has 6 to 20 carbon atoms, and more preferably 6 to 12 carbon atoms. Examples of the arylthio group include a phenylthio group and a naphthylthio group. The number of carbon atoms of the cycloalkoxy group is preferably 3-12, more preferably 3-8. Examples of the cycloalkoxy group include a cyclopropoxy group, a cyclobutoxy group, a cyclopentyloxy group, and a cyclohexyloxy group. The aryl group preferably has 6 to 20 carbon atoms, and more preferably 6 to 12 carbon atoms. Examples of the aryl group include a phenyl group and a naphthyl group. The aryloxy group preferably has 6 to 20 carbon atoms, and more preferably 6 to 12 carbon atoms. Examples of the aryloxy group include a phenoxy group and a naphthoxy group. The heterocycloalkyl group preferably has 2 to 10 carbon atoms, and more preferably 3 to 5 carbon atoms. Examples of the heterocycloalkyl group include a piperidino group, a dioxanyl group, and a morpholino group. The heteroaryl group preferably has 3 to 20 carbon atoms, and more preferably 3 to 10 carbon atoms. Examples of the heteroaryl group include a thienyl group and a pyridyl group. The acyl group preferably has 1 to 20 carbon atoms, and more preferably 1 to 12 carbon atoms. Examples of the acyl group include a formyl group, an acetyl group, and a benzoyl group. The alkylcarbonamide group preferably has 1 to 20 carbon atoms, and more preferably 1 to 12 carbon atoms. Examples of the alkylcarbonamide group include an acetamide group. The arylcarbonamide group preferably has 1 to 20 carbon atoms, and more preferably 1 to 12 carbon atoms. Examples of the arylcarbonamide group include a benzamide group and the like. The alkylsulfonamide group preferably has 1 to 20 carbon atoms, and more preferably 1 to 12 carbon atoms. Examples of the sulfonamido group include a methanesulfonamido group and the like, and the arylsulfonamido group preferably has 1 to 20 carbon atoms, and more preferably 1 to 12 carbon atoms. Examples of the arylsulfonamide group include a benzenesulfonamide group and p-toluenesulfonamide group. The number of carbon atoms in the aralkyl group is preferably 7-20, and more preferably 7-12. Examples of the aralkyl group include a benzyl group, a phenethyl group, and a naphthylmethyl group. The alkoxycarbonyl group preferably has 1 to 20 carbon atoms, more preferably 2 to 12 carbon atoms. Examples of the alkoxycarbonyl group include a methoxycarbonyl group. The aryloxycarbonyl group preferably has 7 to 20 carbon atoms, and more preferably 7 to 12 carbon atoms. Examples of the aryloxycarbonyl group include a phenoxycarbonyl group. The aralkyloxycarbonyl group preferably has 8 to 20 carbon atoms, and more preferably 8 to 12 carbon atoms. Examples of the aralkyloxycarbonyl group include a benzyloxycarbonyl group. The acyloxy group preferably has 1 to 20 carbon atoms, and more preferably 2 to 12 carbon atoms. Examples of the acyloxy group include an acetoxy group and a benzoyloxy group. The alkenyl group has preferably 2 to 20 carbon atoms, and more preferably 2 to 12 carbon atoms. Examples of the alkenyl group include vinyl group, allyl group and isopropenyl group. The alkynyl group preferably has 2 to 20 carbon atoms, and more preferably 2 to 12 carbon atoms. Examples of the alkynyl group include an ethynyl group. The alkylsulfonyl group preferably has 1 to 20 carbon atoms, and more preferably 1 to 12 carbon atoms. Examples of the alkylsulfonyl group include a methylsulfonyl group and an ethylsulfonyl group. The arylsulfonyl group preferably has 6 to 20 carbon atoms, and more preferably 6 to 12 carbon atoms. Examples of the arylsulfonyl group include a phenylsulfonyl group and a naphthylsulfonyl group. The alkyloxysulfonyl group preferably has 1 to 20 carbon atoms, and more preferably 1 to 12 carbon atoms. Examples of the alkyloxysulfonyl group include a methoxysulfonyl group and an ethoxysulfonyl group. The aryloxysulfonyl group preferably has 6 to 20 carbon atoms, and more preferably 6 to 12 carbon atoms. Examples of the aryloxysulfonyl group include a phenoxysulfonyl group and a naphthoxysulfonyl group. The alkylsulfonyloxy group preferably has 1 to 20 carbon atoms, and more preferably 1 to 12 carbon atoms. Examples of the alkylsulfonyloxy group include a methylsulfonyloxy group and an ethylsulfonyloxy group. The number of carbon atoms of the arylsulfonyloxy group is preferably 6-20, and more preferably 6-12. Examples of the arylsulfonyloxy group include a phenylsulfonyloxy group and a naphthylsulfonyloxy group. The substituents may be the same or different, and these substituents may be further substituted.
本発明一般式(I)で表されるヒドロキシ基を有する構造単位において、Aは置換或いは無置換アルキレン基、−(CH2CHRbO)x−CH2CHRb−を表す。アルキレン基は、例えば炭素原子数1〜5が好ましく、より好ましくはエチレン基、プロピレン基である。これらのアルキレン基は前述した置換基で置換されていても良い。また、Rbは水素原子、アルキル基を表す。アルキル基は、例えば炭素原子数1〜5の直鎖、或いは分岐アルキル基が好ましく、より好ましくはメチル基である。また、これらのアルキル基は前述の置換基で置換されていても良い。更に、xは平均繰り返しユニット数を表し、1〜100が好ましく、より好ましくは1〜10である。繰り返しユニット数は分布を有しており、表記は平均値を示し、小数点以下1桁で表記しても良い。In the structural unit having a hydroxy group represented by formula (I) of the present invention, A represents a substituted or unsubstituted alkylene group, — (CH 2 CHRbO) x —CH 2 CHRb—. The alkylene group preferably has, for example, 1 to 5 carbon atoms, more preferably an ethylene group or a propylene group. These alkylene groups may be substituted with the above-described substituents. R b represents a hydrogen atom or an alkyl group. The alkyl group is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and more preferably a methyl group. Further, these alkyl groups may be substituted with the above-described substituents. Furthermore, x represents the average number of repeating units, preferably 1 to 100, more preferably 1 to 10. The number of repeating units has a distribution, the notation indicates an average value, and may be expressed by one digit after the decimal point.
本発明一般式(II)で表されるヒドロキシ基を有しない構造単位において、R、Q、Ra、A、Rb、xは、各々一般式(I)で定義した内容と同義である。 In the structural unit having no hydroxy group represented by the general formula (II) of the present invention, R, Q, Ra, A, Rb, and x have the same meanings as defined in the general formula (I).
本発明一般式(II)で表されるヒドロキシ基を有しない構造単位において、yは0、1を表す。また、Zは、水素原子、アルコキシ基、−O−C(=O)−Rc、−O−SO2−Rd、−O−SiRe3を表す。Rc、Rd、Reは置換或いは無置換のアルキル基、またはアリール基を表し、アルキル基は、例えば炭素原子数1〜12が好ましく、より好ましくはメチル基、エチル基で、更に好ましくはメチル基である。これらのアルキル基は前述した置換基で置換されても良い。アルキル基としては、ハロゲン置換アルキル基が好ましく、特にパーフルオロアルキル基が好ましく、例えば炭素原子数1〜8が好ましく、より好ましくはトリフルオロメチル基、ペンタフルオロエチル基で、更に好ましくはトリフルオロメチル基である。アリール基は、例えばフェニル基、トルイル基が好ましく、より好ましくはトルイル基である。更に、これらのアルキル基、アリール基は前述した置換基で置換されても良い。In the structural unit having no hydroxy group represented by the general formula (II) of the present invention, y represents 0 or 1. Z represents a hydrogen atom, an alkoxy group, —O—C (═O) —Rc, —O—SO 2 —Rd, or —O—SiRe 3 . Rc, Rd and Re represent a substituted or unsubstituted alkyl group or an aryl group, and the alkyl group preferably has, for example, 1 to 12 carbon atoms, more preferably a methyl group or an ethyl group, still more preferably a methyl group. is there. These alkyl groups may be substituted with the substituent described above. The alkyl group is preferably a halogen-substituted alkyl group, particularly preferably a perfluoroalkyl group, for example, preferably having 1 to 8 carbon atoms, more preferably a trifluoromethyl group or a pentafluoroethyl group, still more preferably trifluoromethyl. It is a group. The aryl group is preferably, for example, a phenyl group or a toluyl group, and more preferably a toluyl group. Furthermore, these alkyl groups and aryl groups may be substituted with the above-described substituents.
以下に一般式(I)、一般式(II)で表される構造単位の代表的具体例を示すが、本発明はこれらによって限定されるものではない。 Typical examples of the structural units represented by general formula (I) and general formula (II) are shown below, but the present invention is not limited thereto.
本発明のバインダー樹脂は一般式(I)で表される構造単位と一般式(II)で表される構造単位を含有する以外に更に別の構造単位を含有していても良い。本発明のバインダー樹脂を、本発明のヒドロキシ基含有非導電性ポリマーと呼ぶこともある。 The binder resin of the present invention may contain another structural unit other than the structural unit represented by the general formula (I) and the structural unit represented by the general formula (II). The binder resin of the present invention may be referred to as the hydroxy group-containing nonconductive polymer of the present invention.
本発明に係るバインダー樹脂において、一般式(I)で表されるヒドロキシ基を有する構造単位のモル比は、5〜90%が好ましく、より好ましくは10〜50%である。 In the binder resin according to the present invention, the molar ratio of the structural unit having a hydroxy group represented by the general formula (I) is preferably 5 to 90%, more preferably 10 to 50%.
本発明のバインダー樹脂は汎用的な重合触媒を用いたラジカル重合により得ることができる。重合様式としては、塊状重合、溶液重合、懸濁重合、乳化重合等が挙げられ、好ましくは溶液重合である。重合温度は、使用する開始剤によって異なるが、一般に−10〜250℃、好ましくは0〜200℃、より好ましくは10〜100℃で実施される。 The binder resin of the present invention can be obtained by radical polymerization using a general-purpose polymerization catalyst. Examples of the polymerization mode include bulk polymerization, solution polymerization, suspension polymerization, emulsion polymerization and the like, preferably solution polymerization. The polymerization temperature varies depending on the initiator used, but is generally -10 to 250 ° C, preferably 0 to 200 ° C, more preferably 10 to 100 ° C.
本発明のバインダー樹脂の分子量は3,000〜2,000,000の範囲が好ましく、より好ましくは4,000〜500,000、更に好ましくは5000〜100000の範囲内である。 The molecular weight of the binder resin of the present invention is preferably in the range of 3,000 to 2,000,000, more preferably 4,000 to 500,000, and still more preferably 5,000 to 100,000.
本発明のバインダー樹脂の数平均分子量、分子量分布の測定は、一般的に知られているゲルパーミエーションクロマトグラフィー(GPC)により行うことができる。使用する溶媒は、バインダー樹脂が溶解すれば特に限りはなく、THF(テトラヒドロフラン)、DMF(ジメチルホルムアミド)、CH2Cl2が好ましく、より好ましくはTHF、DMFであり、更に好ましくはDMFである。また、測定温度も特に制限はないが40℃が好ましい。The number average molecular weight and molecular weight distribution of the binder resin of the present invention can be measured by generally known gel permeation chromatography (GPC). The solvent to be used is not particularly limited as long as the binder resin dissolves, and THF (tetrahydrofuran), DMF (dimethylformamide), and CH 2 Cl 2 are preferable, more preferably THF and DMF, and still more preferably DMF. The measurement temperature is not particularly limited, but 40 ° C. is preferable.
〈導電性ポリマー〉
本発明では、第2導電層は導電性ポリマーを含有する。<Conductive polymer>
In the present invention, the second conductive layer contains a conductive polymer.
本発明に係る導電性ポリマーは、π共役系導電性高分子とポリ陰イオンとを有してなる導電性ポリマーであることが好ましい。こうした導電性ポリマーは、後述するπ共役系導電性高分子を形成する前駆体モノマーを、適切な酸化剤と酸化触媒と後述のポリ陰イオンの存在下で化学酸化重合することによって容易に製造できる。 The conductive polymer according to the present invention is preferably a conductive polymer having a π-conjugated conductive polymer and a polyanion. Such a conductive polymer can be easily produced by chemical oxidative polymerization of a precursor monomer that forms a π-conjugated conductive polymer described later in the presence of an appropriate oxidizing agent, an oxidation catalyst, and a poly anion described later. .
(π共役系導電性高分子)
本発明に用いられるπ共役系導電性高分子としては、特に限定されず、ポリチオフェン(基本のポリチオフェンを含む、以下同様)類、ポリピロール類、ポリインドール類、ポリカルバゾール類、ポリアニリン類、ポリアセチレン類、ポリフラン類、ポリパラフェニレンビニレン類、ポリアズレン類、ポリパラフェニレン類、ポリパラフェニレンサルファイド類、ポリイソチアナフテン類、ポリチアジル類、の鎖状導電性ポリマーを利用することができる。中でも、導電性、透明性、安定性等の観点からポリチオフェン類やポリアニリン類が好ましい。ポリエチレンジオキシチオフェンが最も好ましい。(Π-conjugated conductive polymer)
The π-conjugated conductive polymer used in the present invention is not particularly limited, and includes polythiophenes (including basic polythiophenes, the same applies hereinafter), polypyrroles, polyindoles, polycarbazoles, polyanilines, polyacetylenes, A chain conductive polymer of polyfurans, polyparaphenylene vinylenes, polyazulenes, polyparaphenylenes, polyparaphenylene sulfides, polyisothianaphthenes, polythiazyl compounds can be used. Of these, polythiophenes and polyanilines are preferable from the viewpoints of conductivity, transparency, stability, and the like. Most preferred is polyethylene dioxythiophene.
(π共役系導電性高分子前駆体モノマー)
π共役系導電性高分子の形成に用いられる前駆体モノマーは、分子内にπ共役系を有し、適切な酸化剤の作用によって高分子化した際にもその主鎖にπ共役系が形成されるものである。例えば、ピロール類及びその誘導体、チオフェン類及びその誘導体、アニリン類及びその誘導体等が挙げられる。(Π-conjugated conductive polymer precursor monomer)
Precursor monomers used in the formation of π-conjugated conductive polymers have a π-conjugated system in the molecule, and even when polymerized by the action of an appropriate oxidant, a π-conjugated system is formed in the main chain. It is what is done. Examples thereof include pyrroles and derivatives thereof, thiophenes and derivatives thereof, anilines and derivatives thereof, and the like.
前駆体モノマーの具体例としては、ピロール、3−メチルピロール、3−エチルピロール、3−n−プロピルピロール、3−ブチルピロール、3−オクチルピロール、3−デシルピロール、3−ドデシルピロール、3,4−ジメチルピロール、3,4−ジブチルピロール、3−カルボキシルピロール、3−メチル−4−カルボキシルピロール、3−メチル−4−カルボキシエチルピロール、3−メチル−4−カルボキシブチルピロール、3−ヒドロキシピロール、3−メトキシピロール、3−エトキシピロール、3−ブトキシピロール、3−ヘキシルオキシピロール、3−メチル−4−ヘキシルオキシピロール、チオフェン、3−メチルチオフェン、3−エチルチオフェン、3−プロピルチオフェン、3−ブチルチオフェン、3−ヘキシルチオフェン、3−ヘプチルチオフェン、3−オクチルチオフェン、3−デシルチオフェン、3−ドデシルチオフェン、3−オクタデシルチオフェン、3−ブロモチオフェン、3−クロロチオフェン、3−ヨードチオフェン、3−シアノチオフェン、3−フェニルチオフェン、3,4−ジメチルチオフェン、3,4−ジブチルチオフェン、3−ヒドロキシチオフェン、3−メトキシチオフェン、3−エトキシチオフェン、3−ブトキシチオフェン、3−ヘキシルオキシチオフェン、3−ヘプチルオキシチオフェン、3−オクチルオキシチオフェン、3−デシルオキシチオフェン、3−ドデシルオキシチオフェン、3−オクタデシルオキシチオフェン、3,4−ジヒドロキシチオフェン、3,4−ジメトキシチオフェン、3,4−ジエトキシチオフェン、3,4−ジプロポキシチオフェン、3,4−ジブトキシチオフェン、3,4−ジヘキシルオキシチオフェン、3,4−ジヘプチルオキシチオフェン、3,4−ジオクチルオキシチオフェン、3,4−ジデシルオキシチオフェン、3,4−ジドデシルオキシチオフェン、3,4−エチレンジオキシチオフェン、3,4−プロピレンジオキシチオフェン、3,4−ブテンジオキシチオフェン、3−メチル−4−メトキシチオフェン、3−メチル−4−エトキシチオフェン、3−カルボキシチオフェン、3−メチル−4−カルボキシチオフェン、3−メチル−4−カルボキシエチルチオフェン、3−メチル−4−カルボキシブチルチオフェン、アニリン、2−メチルアニリン、3−イソブチルアニリン、2−アニリンスルホン酸、3−アニリンスルホン酸等が挙げられる。 Specific examples of the precursor monomer include pyrrole, 3-methylpyrrole, 3-ethylpyrrole, 3-n-propylpyrrole, 3-butylpyrrole, 3-octylpyrrole, 3-decylpyrrole, 3-dodecylpyrrole, 3, 4-dimethylpyrrole, 3,4-dibutylpyrrole, 3-carboxylpyrrole, 3-methyl-4-carboxylpyrrole, 3-methyl-4-carboxyethylpyrrole, 3-methyl-4-carboxybutylpyrrole, 3-hydroxypyrrole 3-methoxypyrrole, 3-ethoxypyrrole, 3-butoxypyrrole, 3-hexyloxypyrrole, 3-methyl-4-hexyloxypyrrole, thiophene, 3-methylthiophene, 3-ethylthiophene, 3-propylthiophene, 3 -Butylthiophene, 3-hexylchi Phen, 3-heptylthiophene, 3-octylthiophene, 3-decylthiophene, 3-dodecylthiophene, 3-octadecylthiophene, 3-bromothiophene, 3-chlorothiophene, 3-iodothiophene, 3-cyanothiophene, 3-phenyl Thiophene, 3,4-dimethylthiophene, 3,4-dibutylthiophene, 3-hydroxythiophene, 3-methoxythiophene, 3-ethoxythiophene, 3-butoxythiophene, 3-hexyloxythiophene, 3-heptyloxythiophene, 3- Octyloxythiophene, 3-decyloxythiophene, 3-dodecyloxythiophene, 3-octadecyloxythiophene, 3,4-dihydroxythiophene, 3,4-dimethoxythiophene, 3,4-diethoxythiol 3,4-dipropoxythiophene, 3,4-dibutoxythiophene, 3,4-dihexyloxythiophene, 3,4-diheptyloxythiophene, 3,4-dioctyloxythiophene, 3,4-didecyloxy Thiophene, 3,4-didodecyloxythiophene, 3,4-ethylenedioxythiophene, 3,4-propylenedioxythiophene, 3,4-butenedioxythiophene, 3-methyl-4-methoxythiophene, 3-methyl -4-ethoxythiophene, 3-carboxythiophene, 3-methyl-4-carboxythiophene, 3-methyl-4-carboxyethylthiophene, 3-methyl-4-carboxybutylthiophene, aniline, 2-methylaniline, 3-isobutyl Aniline, 2-aniline sulfonic acid, 3-aniline A sulfonic acid etc. are mentioned.
(ポリ陰イオン)
本発明に用いられるポリ陰イオンは、置換もしくは未置換のポリアルキレン、置換もしくは未置換のポリアルケニレン、置換もしくは未置換のポリイミド、置換もしくは未置換のポリアミド、置換もしくは未置換のポリエステル及びこれらの共重合体であって、アニオン基を有する構成単位とアニオン基を有さない構成単位とからなるものである。(Poly anion)
The polyanion used in the present invention includes a substituted or unsubstituted polyalkylene, a substituted or unsubstituted polyalkenylene, a substituted or unsubstituted polyimide, a substituted or unsubstituted polyamide, a substituted or unsubstituted polyester, and a co-polymer thereof. A polymer comprising a structural unit having an anionic group and a structural unit having no anionic group.
このポリ陰イオンは、π共役系導電性高分子を溶媒に可溶化させる可溶化高分子である。また、ポリ陰イオンのアニオン基は、π共役系導電性高分子に対するドーパントとして機能して、π共役系導電性高分子の導電性と耐熱性を向上させる。 This poly anion is a solubilized polymer that solubilizes the π-conjugated conductive polymer in a solvent. The anion group of the polyanion functions as a dopant for the π-conjugated conductive polymer, and improves the conductivity and heat resistance of the π-conjugated conductive polymer.
ポリ陰イオンのアニオン基としては、π共役系導電性高分子への化学酸化ドープが起こりうる官能基であればよいが、中でも、製造の容易さ及び安定性の観点からは、一置換硫酸エステル基、一置換リン酸エステル基、リン酸基、カルボキシ基、スルホ基等が好ましい。さらに、官能基のπ共役系導電性高分子へのドープ効果の観点より、スルホ基、一置換硫酸エステル基、カルボキシ基がより好ましい。 The anion group of the polyanion may be any functional group capable of causing chemical oxidation doping to the π-conjugated conductive polymer. Among them, from the viewpoint of ease of production and stability, a monosubstituted sulfate ester Group, monosubstituted phosphate group, phosphate group, carboxy group, sulfo group and the like are preferable. Furthermore, from the viewpoint of the doping effect of the functional group on the π-conjugated conductive polymer, a sulfo group, a monosubstituted sulfate group and a carboxy group are more preferable.
ポリ陰イオンの具体例としては、ポリビニルスルホン酸、ポリスチレンスルホン酸、ポリアリルスルホン酸、ポリアクリル酸エチルスルホン酸、ポリアクリル酸ブチルスルホン酸、ポリ−2−アクリルアミド−2−メチルプロパンスルホン酸、ポリイソプレンスルホン酸、ポリビニルカルボン酸、ポリスチレンカルボン酸、ポリアリルカルボン酸、ポリアクリルカルボン酸、ポリメタクリルカルボン酸、ポリ−2−アクリルアミド−2−メチルプロパンカルボン酸、ポリイソプレンカルボン酸、ポリアクリル酸等が挙げられる。これらの単独重合体であってもよいし、2種以上の共重合体であってもよい。 Specific examples of polyanions include polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly-2-acrylamido-2-methylpropane sulfonic acid, poly Isoprene sulfonic acid, polyvinyl carboxylic acid, polystyrene carboxylic acid, polyallyl carboxylic acid, polyacryl carboxylic acid, polymethacryl carboxylic acid, poly-2-acrylamido-2-methylpropane carboxylic acid, polyisoprene carboxylic acid, polyacrylic acid, etc. Can be mentioned. These homopolymers may be sufficient and 2 or more types of copolymers may be sufficient.
また、化合物内にさらにF(フッ素原子)を有するポリ陰イオンであってもよい。具体的には、パーフルオロスルホン酸基を含有するナフィオン(Dupont社製)、カルボン酸基を含有するパーフルオロ型ビニルエーテルからなるフレミオン(旭硝子社製)等を挙げることができる。 Further, it may be a poly anion further having F (fluorine atom) in the compound. Specifically, Nafion (made by Dupont) containing a perfluorosulfonic acid group, Flemion (made by Asahi Glass Co., Ltd.) made of perfluoro vinyl ether containing a carboxylic acid group, and the like can be mentioned.
これらのうち、スルホン酸を有する化合物であると、導電性ポリマー含有層を塗布、乾燥することによって形成した後に、マイクロ波を照射する前に100〜120℃で5分以上の加熱乾燥処理を施してもよい。これにより架橋反応が促進するため、塗布膜の洗浄耐性や溶媒耐性が著しく向上することから、好ましい。 Among these, the compound having a sulfonic acid is formed by applying and drying the conductive polymer-containing layer, and then subjected to a heat drying treatment at 100 to 120 ° C. for 5 minutes or more before irradiating the microwave. May be. This promotes the crosslinking reaction, which is preferable since the washing resistance and solvent resistance of the coating film are remarkably improved.
さらに、これらの中でも、ポリスチレンスルホン酸、ポリイソプレンスルホン酸、ポリアクリル酸エチルスルホン酸、ポリアクリル酸ブチルスルホン酸が好ましい。これらのポリ陰イオンは、本発明のヒドロキシ基含有非導電性ポリマーとの相溶性が高く、また、得られる導電性ポリマーの導電性をより高くできる。 Furthermore, among these, polystyrene sulfonic acid, polyisoprene sulfonic acid, polyacrylic acid ethylsulfonic acid, and polyacrylic acid butylsulfonic acid are preferable. These poly anions have high compatibility with the hydroxy group-containing non-conductive polymer of the present invention, and can further increase the conductivity of the obtained conductive polymer.
ポリ陰イオンの重合度は、モノマー単位が10〜100000個の範囲であることが好ましく、溶媒溶解性及び導電性の点からは、50〜10000個の範囲がより好ましい。 The degree of polymerization of the polyanion is preferably in the range of 10 to 100,000 monomer units, and more preferably in the range of 50 to 10,000 from the viewpoint of solvent solubility and conductivity.
ポリ陰イオンの製造方法としては、例えば、酸を用いてアニオン基を有さないポリマーにアニオン基を直接導入する方法、アニオン基を有しないポリマーをスルホ化剤によりスルホン酸化する方法、アニオン基含有重合性モノマーの重合により製造する方法が挙げられる。 Examples of the method for producing a polyanion include a method of directly introducing an anionic group into a polymer having no anionic group using an acid, a method of sulfonating a polymer having no anionic group with a sulfonating agent, and an anionic group containing The method of manufacturing by superposition | polymerization of a polymerizable monomer is mentioned.
アニオン基含有重合性モノマーの重合により製造する方法は、溶媒中、アニオン基含有重合性モノマーを、酸化剤及び/または重合触媒の存在下で、酸化重合またはラジカル重合によって製造する方法が挙げられる。具体的には、所定量のアニオン基含有重合性モノマーを溶媒に溶解させ、これを一定温度に保ち、それに予め溶媒に所定量の酸化剤及び/または重合触媒を溶解した溶液を添加し、所定時間で反応させる。その反応により得られたポリマーは溶媒によって一定の濃度に調整される。この製造方法において、アニオン基含有重合性モノマーにアニオン基を有さない重合性モノマーを共重合させてもよい。 Examples of the method for producing an anionic group-containing polymerizable monomer by polymerization include a method for producing an anionic group-containing polymerizable monomer in a solvent by oxidative polymerization or radical polymerization in the presence of an oxidizing agent and / or a polymerization catalyst. Specifically, a predetermined amount of the anionic group-containing polymerizable monomer is dissolved in a solvent, kept at a constant temperature, and a solution in which a predetermined amount of an oxidizing agent and / or a polymerization catalyst is dissolved in the solvent is added to the predetermined amount. React with time. The polymer obtained by the reaction is adjusted to a certain concentration by the solvent. In this production method, an anionic group-containing polymerizable monomer may be copolymerized with a polymerizable monomer having no anionic group.
アニオン基含有重合性モノマーの重合に際して使用する酸化剤及び酸化触媒、溶媒は、π共役系導電性高分子を形成する前駆体モノマーを重合する際に使用するものと同様である。 The oxidizing agent, oxidation catalyst, and solvent used in the polymerization of the anionic group-containing polymerizable monomer are the same as those used in the polymerization of the precursor monomer that forms the π-conjugated conductive polymer.
得られたポリマーがポリ陰イオン塩である場合には、ポリ陰イオン酸に変質させることが好ましい。アニオン酸に変質させる方法としては、イオン交換樹脂を用いたイオン交換法、透析法、限外ろ過法等が挙げられ、これらの中でも、作業が容易な点から限外ろ過法が好ましい。 When the obtained polymer is a polyanionic salt, it is preferably transformed into a polyanionic acid. Examples of the method for converting to an anionic acid include an ion exchange method using an ion exchange resin, a dialysis method, an ultrafiltration method, and the like. Among these, the ultrafiltration method is preferable from the viewpoint of easy work.
導電性ポリマーに含まれるπ共役系導電性高分子とポリ陰イオンの比率、「π共役系導電性高分子」:「ポリ陰イオン」は質量比で1:1〜20が好ましい。導電性、分散性の観点からより好ましくは1:2〜10の範囲である。 The ratio of π-conjugated conductive polymer and polyanion contained in the conductive polymer, “π-conjugated conductive polymer”: “polyanion”, is preferably 1: 1 to 20 in mass ratio. From the viewpoint of conductivity and dispersibility, the range of 1: 2 to 10 is more preferable.
π共役系導電性高分子を形成する前駆体モノマーをポリ陰イオンの存在下で化学酸化重合して、本発明に係る導電性ポリマーを得る際に使用される酸化剤は、例えばJ.Am.Soc.,85、454(1963)に記載されるピロールの酸化重合に適する、いずれかの酸化剤である。実際的な理由のために、安価でかつ取扱い易い酸化剤、例えば鉄(III)塩、例えばFeCl3、Fe(ClO4)3、有機酸及び有機残基を含む無機酸の鉄(III)塩、または過酸化水素、重クロム酸カリウム、過硫酸アルカリ(例えば過硫酸カリウム、過硫酸ナトリウム)またはアンモニウム、過ホウ酸アルカリ、過マンガン酸カリウム及び銅塩例えば四フッ化ホウ酸銅を用いることが好ましい。加えて、酸化剤として随時触媒量の金属イオン例えば鉄、コバルト、ニッケル、モリブデン及びバナジウムイオンの存在下における空気及び酸素も使用することができる。過硫酸塩並びに有機酸及び有機残基を含む無機酸の鉄(III)塩の使用が腐食性でないために大きな応用上の利点を有する。The oxidant used when the precursor monomer forming the π-conjugated conductive polymer is chemically oxidatively polymerized in the presence of the polyanion to obtain the conductive polymer according to the present invention is, for example, J. Org. Am. Soc. 85, 454 (1963), which is suitable for the oxidative polymerization of pyrrole. For practical reasons, cheap and easy to handle oxidants such as iron (III) salts, eg FeCl 3 , Fe (ClO 4 ) 3 , organic acids and iron (III) salts of inorganic acids containing organic residues Or use hydrogen peroxide, potassium dichromate, alkali persulfate (eg potassium persulfate, sodium persulfate) or ammonium, alkali perborate, potassium permanganate and copper salts such as copper tetrafluoroborate preferable. In addition, air and oxygen in the presence of catalytic amounts of metal ions such as iron, cobalt, nickel, molybdenum and vanadium ions can be used as oxidants at any time. The use of persulfates and the iron (III) salts of inorganic acids containing organic acids and organic residues has great application advantages because they are not corrosive.
有機残基を含む無機酸の鉄(III)塩の例としては炭素数1〜20のアルカノールの硫酸半エステルの鉄(III)塩、例えばラウリル硫酸;炭素数1〜20のアルキルスルホン酸、例えばメタンまたはドデカンスルホン酸;脂肪族炭素数1〜20のカルボン酸、例えば2−エチルヘキシルカルボン酸;脂肪族パーフルオロカルボン酸、例えばトリフルオロ酢酸及びパーフルオロオクタノン酸;脂肪族ジカルボン酸、例えばシュウ酸並びに殊に芳香族の、随時炭素数1〜20のアルキル置換されたスルホン酸、例えばベンゼセンスルホン酸、p−トルエンスルホン酸及びドデシルベンゼンスルホン酸のFe(III)塩が挙げられる。 Examples of iron (III) salts of inorganic acids containing organic residues include iron (III) salts of alkanol sulfate half esters of alkanols such as lauryl sulfate; alkyl sulfonic acids of 1 to 20 carbons such as Methane or dodecanesulfonic acid; carboxylic acid having 1 to 20 aliphatic carbon atoms such as 2-ethylhexylcarboxylic acid; aliphatic perfluorocarboxylic acid such as trifluoroacetic acid and perfluorooctanoic acid; aliphatic dicarboxylic acid such as oxalic acid And in particular aromatic (optionally) alkyl-substituted sulfonic acids having 1 to 20 carbon atoms, such as the Fe (III) salts of benzenecenesulfonic acid, p-toluenesulfonic acid and dodecylbenzenesulfonic acid.
こうした導電性ポリマーは、市販の材料も好ましく利用できる。例えば、ポリ(3,4−エチレンジオキシチオフェン)とポリスチレンスルホン酸からなる導電性ポリマー(PEDOT−PSSと略す)が、H.C.Starck社からCleviosシリーズとして、Aldrich社からPEDOT−PSSの483095、560596として、Nagase Chemtex社からDenatronシリーズとして市販されている。また、ポリアニリンが、日産化学社からORMECONシリーズとして市販されている。本発明において、こうした剤も好ましく用いることができる。 As such a conductive polymer, a commercially available material can also be preferably used. For example, a conductive polymer (abbreviated as PEDOT-PSS) composed of poly (3,4-ethylenedioxythiophene) and polystyrenesulfonic acid is described in H.C. C. It is commercially available from Starck as the Clevios series, from Aldrich as PEDOT-PSS 483095, 560596, and from Nagase Chemtex as the Denatron series. Polyaniline is also commercially available from Nissan Chemical as the ORMECON series. In the present invention, such an agent can also be preferably used.
第2ドーパントとして有機化合物を含有してもよい。本発明で用いることができる有機化合物には特に制限はなく、公知のものの中から適宜選択することができ、例えば、酸素含有化合物が好適に挙げられる。前記酸素含有化合物としては、酸素を含有する限り特に制限はなく、例えば、ヒドロキシ基含有化合物、カルボニル基含有化合物、エーテル基含有化合物、スルホキシド基含有化合物等が挙げられる。前記ヒドロキシ基含有化合物としては、例えば、エチレングリコール、ジエチレングリコール、プロピレングリコール、トリメチレングリコール、1,4−ブタンジオール、グリセリン等が挙げられ、これらの中でも、エチレングリコール、ジエチレングリコールが好ましい。前記カルボニル基含有化合物としては、例えば、イソホロン、プロピレンカーボネート、シクロヘキサノン、γ−ブチロラクトン等が挙げられる。前記エーテル基含有化合物としては、例えば、ジエチレングリコールモノエチルエーテル、等が挙げられる。前記スルホキシド基含有化合物としては、例えば、ジメチルスルホキシド等が挙げられる。これらは、1種単独で使用してもよいし、2種以上を併用してもよいが、ジメチルスルホキシド、エチレングリコール、ジエチレングリコールから選ばれる少なくとも1種を用いることが好ましい。 An organic compound may be contained as the second dopant. There is no restriction | limiting in particular in the organic compound which can be used by this invention, It can select suitably from well-known things, For example, an oxygen containing compound is mentioned suitably. The oxygen-containing compound is not particularly limited as long as it contains oxygen, and examples thereof include a hydroxy group-containing compound, a carbonyl group-containing compound, an ether group-containing compound, and a sulfoxide group-containing compound. Examples of the hydroxy group-containing compound include ethylene glycol, diethylene glycol, propylene glycol, trimethylene glycol, 1,4-butanediol, and glycerin. Among these, ethylene glycol and diethylene glycol are preferable. Examples of the carbonyl group-containing compound include isophorone, propylene carbonate, cyclohexanone, and γ-butyrolactone. Examples of the ether group-containing compound include diethylene glycol monoethyl ether. Examples of the sulfoxide group-containing compound include dimethyl sulfoxide. These may be used alone or in combination of two or more, but at least one selected from dimethyl sulfoxide, ethylene glycol, and diethylene glycol is preferably used.
《第1導電層》
本発明に係る第1導電層は、フィルム基板上に金属材料をパターン状に形成することを特徴とする。これにより金属材料からなる光不透過の導電部と透光性窓部を併せ持つフィルム基板となり、透明性、導電性に優れた電極基板が作製できる。金属材料は、導電性に優れていれば特に制限はなく、例えば、金、銀、銅、鉄、ニッケル、クロム等の金属の他に合金でもよい。特に、後述のようにパターンの形成のしやすさの観点から金属材料の形状は、金属微粒子または金属ナノワイヤであることが好ましく、金属材料は導電性の観点から銀であることが好ましい。<< First conductive layer >>
The first conductive layer according to the present invention is characterized in that a metal material is formed in a pattern on a film substrate. As a result, a film substrate having both a light-impermeable conductive portion made of a metal material and a light-transmissive window portion is obtained, and an electrode substrate excellent in transparency and conductivity can be produced. The metal material is not particularly limited as long as it is excellent in conductivity. For example, the metal material may be an alloy other than a metal such as gold, silver, copper, iron, nickel, and chromium. In particular, the shape of the metal material is preferably metal fine particles or metal nanowires from the viewpoint of ease of pattern formation as described later, and the metal material is preferably silver from the viewpoint of conductivity.
パターン形状には特に制限はないが、例えば、導電部がストライプ状、メッシュ状あるいはランダムな網目状であってもよいが、開口率は透明性の観点から80%以上であることが好ましい。開口率とは、光不透過の導電部を除いた光透過部分が全体に占める割合である。例えば、導電部がストライプ状あるいはメッシュ状であるとき、線幅100μm、線間隔1mmのストライプ状パターンの開口率は、およそ90%である。パターンの線幅は10〜200μmが好ましい。細線の線幅を10μm以上とすることにより、所望の導電性が得られ、また200μm以下とすることにより高い透明性を得ることができる。細線の高さは、0.1〜10μmが好ましい。細線の高さを0.1μm以上とすることにより、所望の導電性が得られ、また10μm以下とすることにより有機電子デバイスの形成において、電流リークや機能層の膜厚分布不良が低減される。 The pattern shape is not particularly limited. For example, the conductive portion may be a stripe shape, a mesh shape, or a random network shape, but the aperture ratio is preferably 80% or more from the viewpoint of transparency. The aperture ratio is the ratio of the light transmitting portion excluding the light non-transmitting conductive portion to the whole. For example, when the conductive portion has a stripe shape or a mesh shape, the aperture ratio of the stripe pattern having a line width of 100 μm and a line interval of 1 mm is about 90%. The line width of the pattern is preferably 10 to 200 μm. When the line width of the thin wire is 10 μm or more, desired conductivity can be obtained, and when it is 200 μm or less, high transparency can be obtained. The height of the thin wire is preferably 0.1 to 10 μm. By setting the height of the thin wire to 0.1 μm or more, desired conductivity is obtained, and by setting the height to 10 μm or less, current leakage and poor thickness distribution of the functional layer are reduced in the formation of the organic electronic device. .
導電部がストライプ状またはメッシュ状の電極を形成する方法としては、特に、制限はなく、従来公知な方法が利用できる。例えば、基材全面に金属層を形成し、公知のフォトリソ法によって形成できる。具体的には、基材上に全面に、印刷、蒸着、スパッタ、めっき等の1あるいは2以上の物理的または化学的形成手法を用いて導電体層を形成する、あるいは、金属箔を接着剤で基材に積層した後、公知のフォトリソ法を用いて、エッチングすることにより、所望のストライプ状あるいはメッシュ状に加工できる。 There is no particular limitation on the method for forming the stripe-shaped or mesh-shaped electrode of the conductive portion, and a conventionally known method can be used. For example, a metal layer can be formed on the entire surface of the substrate and formed by a known photolithography method. Specifically, a conductor layer is formed on the entire surface using one or more physical or chemical forming methods such as printing, vapor deposition, sputtering, plating, etc., or a metal foil is used as an adhesive. After being laminated on the base material, the film can be processed into a desired stripe shape or mesh shape by etching using a known photolithography method.
別な方法としては、金属微粒子を含有するインクをスクリーン印刷により所望の形状に印刷する方法や、メッキ可能な触媒インクをグラビア印刷、あるいは、インクジェット方式で所望の形状に塗布した後、メッキ処理する方法、さらに別な方法としては、銀塩写真技術を応用した方法も利用できる。銀塩写真技術を応用した方法については、例えば、特開2009−140750号公報の[0076]−[0112]、及び実施例を参考にして実施できる。触媒インクをグラビア印刷してメッキ処理する方法については、例えば、特開2007−281290号公報を参考にして実施できる。 As another method, a method of printing an ink containing metal fine particles in a desired shape by screen printing, or applying a plating catalyst ink to a desired shape by gravure printing or an ink jet method, followed by plating treatment As another method, a method using silver salt photographic technology can also be used. A method using silver salt photographic technology can be carried out with reference to, for example, [0076]-[0112] of JP-A-2009-140750 and Examples. About the method of carrying out the gravure printing of catalyst ink and plating, it can carry out with reference to Unexamined-Japanese-Patent No. 2007-281290, for example.
ランダムな網目構造としては、例えば、特表2005−530005号公報に記載のような、金属微粒子を含有する液を塗布乾燥することにより、自発的に導電性微粒子の無秩序な網目構造を形成する方法を利用できる。 As a random network structure, for example, a method for spontaneously forming a disordered network structure of conductive fine particles by applying and drying a liquid containing metal fine particles as described in JP-T-2005-530005 Can be used.
別な方法としては、例えば、特表2009−505358号公報に記載のような、金属ナノワイヤを含有する塗布液を塗布乾燥することで、金属ナノワイヤのランダムな網目構造を形成させる方法を利用できる。 As another method, for example, a method of forming a random network structure of metal nanowires by applying and drying a coating solution containing metal nanowires as described in JP-T-2009-505358 can be used.
金属ナノワイヤとは、金属元素を主要な構成要素とする繊維状構造体のことをいう。特に、本発明における金属ナノワイヤとは、原子スケールからnmサイズの短径を有する多数の繊維状構造体を意味する。 The metal nanowire refers to a fibrous structure having a metal element as a main component. In particular, the metal nanowire in the present invention means a large number of fibrous structures having a minor axis from the atomic scale to the nm size.
金属ナノワイヤとしては、1つの金属ナノワイヤで長い導電パスを形成するために、平均長さが3μm以上であることが好ましく、さらには3〜500μmが好ましく、特に3〜300μmであることが好ましい。併せて、長さの相対標準偏差は40%以下であることが好ましい。また、平均短径には特に制限はないが、透明性の観点からは小さいことが好ましく、一方で、導電性の観点からは大きい方が好ましい。金属ナノワイヤの平均短径として10〜300nmが好ましく、30〜200nmであることがより好ましい。併せて、短径の相対標準偏差は20%以下であることが好ましい。金属ナノワイヤの目付け量は0.005〜0.5g/m2が好ましく、0.01〜0.2g/m2がより好ましい。As the metal nanowire, in order to form a long conductive path with one metal nanowire, the average length is preferably 3 μm or more, more preferably 3 to 500 μm, and particularly preferably 3 to 300 μm. In addition, the relative standard deviation of the length is preferably 40% or less. Moreover, although there is no restriction | limiting in particular in an average breadth, it is preferable that it is small from a transparency viewpoint, and the larger one is preferable from a conductive viewpoint. The average minor axis of the metal nanowire is preferably 10 to 300 nm, and more preferably 30 to 200 nm. In addition, the relative standard deviation of the minor axis is preferably 20% or less. Basis weight of the metal nanowires is preferably 0.005~0.5g / m 2, 0.01~0.2g / m 2 is more preferable.
金属ナノワイヤに用いられる金属としては、銅、鉄、コバルト、金、銀等を用いることができるが、導電性の観点から銀が好ましい。また、金属は単一で用いてもよいが、導電性と安定性(金属ナノワイヤの硫化や酸化耐性、及びマイグレーション耐性)を両立するために、主成分となる金属と1種類以上の他の金属を任意の割合で含んでもよい。 As the metal used for the metal nanowire, copper, iron, cobalt, gold, silver or the like can be used, and silver is preferable from the viewpoint of conductivity. In addition, although a single metal may be used, in order to achieve both conductivity and stability (sulfurization, oxidation resistance, and migration resistance of metal nanowires), the main metal and one or more other metals May be included in any proportion.
金属ナノワイヤの製造方法には特に制限はなく、例えば、液相法や気相法等の公知の手段を用いることができる。また、具体的な製造方法にも特に制限はなく、公知の製造方法を用いることができる。例えば、銀ナノワイヤの製造方法としては、Adv.Mater.,2002,14,833〜837、Chem.Mater.,2002,14,4736〜4745、金ナノワイヤの製造方法としては特開2006−233252号公報等、銅ナノワイヤの製造方法としては特開2002−266007号公報等、コバルトナノワイヤの製造方法としては特開2004−149871号公報等を参考にすることができる。特に、上述した銀ナノワイヤの製造方法は、水溶液中で簡便に銀ナノワイヤを製造することができ、また銀の導電率は金属中で最大であることから、好ましく適用することができる。 There is no restriction | limiting in particular in the manufacturing method of metal nanowire, For example, well-known means, such as a liquid phase method and a gaseous phase method, can be used. Moreover, there is no restriction | limiting in particular in a specific manufacturing method, A well-known manufacturing method can be used. For example, as a method for producing silver nanowires, Adv. Mater. , 2002, 14, 833-837, Chem. Mater. 2002, 14, 4736-4745, a method for producing gold nanowires is disclosed in Japanese Patent Application Laid-Open No. 2006-233252, a method for producing copper nanowires is disclosed in Japanese Patent Application Laid-Open No. 2002-266007, and the like. Reference can be made to 2004-149871. In particular, the above-described method for producing silver nanowires can be preferably applied because silver nanowires can be easily produced in an aqueous solution, and the conductivity of silver is maximum in metals.
また、第1導電層の細線部の表面比抵抗は、100Ω/□以下であることが好ましく、大面積化するには20Ω/□以下であることがより好ましい。表面比抵抗は、例えば、JIS K6911、ASTM D257等に準拠して測定することができ、また市販の表面抵抗率計を用いて簡便に測定することができる。 Further, the surface specific resistance of the thin wire portion of the first conductive layer is preferably 100 Ω / □ or less, and more preferably 20 Ω / □ or less for increasing the area. The surface specific resistance can be measured based on, for example, JIS K6911, ASTM D257, etc., and can be easily measured using a commercially available surface resistivity meter.
また、第1導電層はフィルム基板にダメージを与えない範囲で加熱処理を施すことが好ましい。これにより、金属微粒子や金属ナノワイヤ同士の融着が進み、第1導電層の高導電化するため、特に好ましい。 Moreover, it is preferable to heat-process a 1st conductive layer in the range which does not damage a film substrate. Thereby, fusion of metal fine particles and metal nanowires progresses and the first conductive layer becomes highly conductive, which is particularly preferable.
第2導電層は、パターン形成された第1導電層を完全に被覆してもよいし、一部を被覆または接触してもよい。第2導電層は導電性ポリマーと本発明のヒドロキシ基含有非導電性ポリマーからなる分散液を塗布、乾燥して膜形成する。第2導電層の塗布は、前述のグラビア印刷法、フレキソ印刷法、スクリーン印刷法等の印刷方法に加えて、ロールコート法、バーコート法、ディップコーティング法、スピンコーティング法、キャスティング法、ダイコート法、ブレードコート法、バーコート法、グラビアコート法、カーテンコート法、スプレーコート法、ドクターコート法、インクジェット法等の塗布法を用いることができる。 The second conductive layer may completely cover the patterned first conductive layer, or may partially cover or contact it. The second conductive layer is formed into a film by applying and drying a dispersion composed of a conductive polymer and the hydroxy group-containing non-conductive polymer of the present invention. In addition to the above-described printing methods such as gravure printing, flexographic printing, and screen printing, the second conductive layer is applied by roll coating, bar coating, dip coating, spin coating, casting, and die coating. A coating method such as a blade coating method, a bar coating method, a gravure coating method, a curtain coating method, a spray coating method, a doctor coating method, or an inkjet method can be used.
また、第1導電層の一部を第2導電層が被覆または接触している透明電極を作製する手段としては、転写フィルムに第1導電層を上述の方法で形成し、さらに第2導電層を上述の方法で積層したしたものを、上述のフィルム基板に転写する方法が挙げられる。また、第1導電層の非導電部にインクジェット法等で公知の方法で、第2導電層を形成する方法等が挙げられる。 As a means for producing a transparent electrode in which a part of the first conductive layer is covered or in contact with the second conductive layer, the first conductive layer is formed on the transfer film by the above-described method, and the second conductive layer is further formed. There is a method of transferring a laminate of the above to the above film substrate. Moreover, the method etc. which form a 2nd conductive layer by the well-known method by the inkjet method etc. in the nonelectroconductive part of a 1st conductive layer are mentioned.
第2導電層は、さらに本発明のヒドロキシ基含有非導電性ポリマーを含むことが特徴である。これにより、高い導電性、高い透明性、強い膜強度を得ることができる。 The second conductive layer is further characterized by including the hydroxy group-containing nonconductive polymer of the present invention. Thereby, high electroconductivity, high transparency, and strong film | membrane intensity | strength can be obtained.
このような構造を有する本発明の導電層を形成することで、金属または金属酸化物細線、あるいは導電性ポリマー層単独では得ることのできない高い導電性を、電極面内において均一に得ることができる。 By forming the conductive layer of the present invention having such a structure, high conductivity that cannot be obtained with a metal or metal oxide fine wire or a conductive polymer layer alone can be obtained uniformly in the electrode plane. .
第2導電層の導電性ポリマーと本発明のヒドロキシ基含有非導電性ポリマーとの比率は、導電性ポリマーを100質量部とした時、ヒドロキシ基含有非導電性ポリマーが30〜900質量部であることが好ましく、電流リーク防止、ヒドロキシ基含有非導電性ポリマーの導電性増強効果、透明性の観点から、ヒドロキシ基含有非導電性ポリマーが100質量部以上であることがより好ましい。 The ratio of the conductive polymer of the second conductive layer to the hydroxy group-containing nonconductive polymer of the present invention is 30 to 900 parts by mass of the hydroxy group-containing nonconductive polymer when the conductive polymer is 100 parts by mass. It is preferable that the hydroxy group-containing nonconductive polymer is 100 parts by mass or more from the viewpoints of preventing current leakage, the conductivity enhancing effect of the hydroxy group-containing nonconductive polymer, and transparency.
第2導電層の乾燥膜厚は30〜2000nmであることが好ましい。導電性の点から、100nm以上であることがより好ましく、電極の表面平滑性の点から、200nm以上であることがさらに好ましい。また、透明性の点から、1000nm以下であることがより好ましい。 The dry film thickness of the second conductive layer is preferably 30 to 2000 nm. From the viewpoint of conductivity, the thickness is more preferably 100 nm or more, and from the viewpoint of the surface smoothness of the electrode, it is further preferably 200 nm or more. Moreover, it is more preferable that it is 1000 nm or less from the point of transparency.
第2導電層を塗布した後、適宜乾燥処理を施すことができる。乾燥処理の条件として特に制限はないが、基材や導電層が損傷しない範囲の温度で乾燥処理することが好ましい。例えば、80〜120℃で10秒から10分の乾燥処理をすることができる。これにより電極の洗浄耐性、溶媒耐性が著しく向上し、さらに素子性能が向上する。特に、有機EL素子においては、駆動電圧の低減、寿命の向上といった効果が得られる。 After apply | coating a 2nd conductive layer, a drying process can be given suitably. Although there is no restriction | limiting in particular as conditions of a drying process, It is preferable to dry-process at the temperature of the range which does not damage a base material or a conductive layer. For example, the drying process can be performed at 80 to 120 ° C. for 10 seconds to 10 minutes. Thereby, the cleaning resistance and solvent resistance of the electrode are remarkably improved, and the device performance is further improved. In particular, in an organic EL element, effects such as reduction in driving voltage and improvement in life can be obtained.
添加剤としては、可塑剤、酸化防止剤や硫化防止剤等の安定剤、界面活性剤、溶解促進剤、重合禁止剤、染料や顔料等の着色剤等が挙げられる。さらに、塗布性等の作業性を高める観点から、溶媒(例えば、水や、アルコール類、グリコール類、セロソルブ類、ケトン類、エステル類、エーテル類、アミド類、炭化水素類等の有機溶媒)を含んでいてもよい。 Examples of the additive include plasticizers, stabilizers such as antioxidants and sulfurization inhibitors, surfactants, dissolution accelerators, polymerization inhibitors, and colorants such as dyes and pigments. Furthermore, from the viewpoint of improving workability such as coating properties, solvents (for example, organic solvents such as water, alcohols, glycols, cellosolves, ketones, esters, ethers, amides, hydrocarbons, etc.) are used. May be included.
《基材》
本発明の透明電極に用いられる基材はフィルム基板とも呼ばれ、高い光透明性を有し、フレキシブル性に優れており、誘電損失係数が十分小さくて、マイクロ波の吸収が加熱対象である導電層よりも小さい材質であれば特に制限はない。例えば、樹脂基板、樹脂フィルム等が好適に挙げられるが、生産性の観点や軽量性と柔軟性といった性能の観点から透明樹脂フィルムを用いることが好ましい。"Base material"
The base material used for the transparent electrode of the present invention is also called a film substrate, has high light transparency, excellent flexibility, a sufficiently small dielectric loss coefficient, and a conductive material whose microwave absorption is to be heated. There is no particular limitation as long as the material is smaller than the layer. For example, although a resin substrate, a resin film, etc. are mentioned suitably, it is preferable to use a transparent resin film from a viewpoint of productivity, a viewpoint of performance, such as lightness and a softness | flexibility.
透明樹脂フィルムであれば、外力による変形や衝撃に強く、割れにくい。好ましく用いることができる透明樹脂フィルムには特に制限はなく、その材料、形状、構造、厚み等については公知のものの中から適宜選択することができる。例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート、変性ポリエステル等のポリエステル系樹脂フィルム、ポリエチレン(PE)樹脂フィルム、ポリプロピレン(PP)樹脂フィルム、ポリスチレン樹脂フィルム、環状オレフィン系樹脂等のポリオレフィン類樹脂フィルム、ポリ塩化ビニル、ポリ塩化ビニリデン等のビニル系樹脂フィルム、ポリエーテルエーテルケトン(PEEK)樹脂フィルム、ポリサルホン(PSF)樹脂フィルム、ポリエーテルサルホン(PES)樹脂フィルム、ポリカーボネート(PC)樹脂フィルム、ポリアミド樹脂フィルム、ポリイミド樹脂フィルム、アクリル樹脂フィルム、トリアセチルセルロース(TAC)樹脂フィルム等を挙げることができる。可視域の波長(380〜780nm)における透過率が80%以上である樹脂フィルムであれば、本発明に用いられるフィルム基板として好ましく用いられる。中でも透明性、耐熱性、取り扱いやすさ、強度及びコストの点から、二軸延伸ポリエチレンテレフタレートフィルム、二軸延伸ポリエチレンナフタレートフィルム、ポリエーテルサルホンフィルム、ポリカーボネートフィルムが好ましく、二軸延伸ポリエチレンテレフタレートフィルム、二軸延伸ポリエチレンナフタレートフィルムがより好ましい。 If it is a transparent resin film, it is resistant to deformation and impact due to external force, and is difficult to break. There is no restriction | limiting in particular in the transparent resin film which can be used preferably, About the material, a shape, a structure, thickness, etc., it can select suitably from well-known things. For example, polyester resin films such as polyethylene terephthalate (PET), polyethylene naphthalate, modified polyester, polyethylene (PE) resin films, polypropylene (PP) resin films, polystyrene resin films, polyolefin resin films such as cyclic olefin resins, Vinyl resin films such as polyvinyl chloride and polyvinylidene chloride, polyether ether ketone (PEEK) resin film, polysulfone (PSF) resin film, polyether sulfone (PES) resin film, polycarbonate (PC) resin film, polyamide resin Examples thereof include a film, a polyimide resin film, an acrylic resin film, and a triacetyl cellulose (TAC) resin film. A resin film having a transmittance of 80% or more at a visible wavelength (380 to 780 nm) is preferably used as a film substrate used in the present invention. Among them, from the viewpoint of transparency, heat resistance, ease of handling, strength and cost, a biaxially stretched polyethylene terephthalate film, a biaxially stretched polyethylene naphthalate film, a polyethersulfone film, and a polycarbonate film are preferable, and a biaxially stretched polyethylene terephthalate film. A biaxially stretched polyethylene naphthalate film is more preferred.
本発明に用いられるフィルム基板には、塗布液の濡れ性や接着性を確保するために、表面処理を施すことや易接着層を設けることができる。表面処理や易接着層については、従来公知の技術を使用できる。 The film substrate used in the present invention can be subjected to a surface treatment or an easy adhesion layer in order to ensure the wettability and adhesiveness of the coating solution. A conventionally well-known technique can be used about a surface treatment or an easily bonding layer.
例えば、表面処理としては、コロナ放電処理、火炎処理、紫外線処理、高周波処理、グロー放電処理、活性プラズマ処理、レーザー処理等の表面活性化処理を挙げることができる。 For example, the surface treatment includes surface activation treatment such as corona discharge treatment, flame treatment, ultraviolet treatment, high frequency treatment, glow discharge treatment, active plasma treatment, and laser treatment.
また、易接着層としては、ポリエステル、ポリアミド、ポリウレタン、ビニル系共重合体、ブタジエン系共重合体、アクリル系共重合体、ビニリデン系共重合体、エポキシ系共重合体等を挙げることができる。易接着層は単層でもよいが、接着性を向上させるためには2層以上の構成にしてもよい。 Examples of the easy adhesion layer include polyester, polyamide, polyurethane, vinyl copolymer, butadiene copolymer, acrylic copolymer, vinylidene copolymer, and epoxy copolymer. The easy adhesion layer may be a single layer, but may be composed of two or more layers in order to improve adhesion.
また、フィルム基板の表面または裏面には、無機物、有機物の被膜またはその両者のハイブリッド被膜が形成されていてもよく、JIS K 7129−1992に準拠した方法で測定した水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が、1×10−3g/(m2・24h)以下のバリア性フィルムであることが好ましく、さらには、JIS K 7126−1987に準拠した方法で測定した酸素透過度が、1×10−3ml/m2・24h・atm以下、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が、1×10−3g/(m2・24h)以下の高バリア性フィルムであることが好ましい。In addition, an inorganic film, an organic film, or a hybrid film of both may be formed on the front surface or the back surface of the film substrate, and the water vapor transmission rate (25 ± 0.00%) measured by a method based on JIS K 7129-1992. 5 ° C., relative humidity (90 ± 2)% RH) is preferably a barrier film of 1 × 10 −3 g / (m 2 · 24 h) or less, and further conforms to JIS K 7126-1987. The oxygen permeability measured by the method is 1 × 10 −3 ml / m 2 · 24 h · atm or less, and the water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) is 1 × 10 A high barrier film of −3 g / (m 2 · 24 h) or less is preferable.
高バリア性フィルムとするためにフィルム基板の表面または裏面に形成されるバリア膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。さらに該膜の脆弱性を改良するためにこれら無機層と有機材料からなる層の積層構造を持たせることがより好ましい。無機層と有機層の積層順については特に制限はないが、両者を交互に複数回積層させることが好ましい。 As a material for forming a barrier film formed on the front or back surface of the film substrate in order to obtain a high barrier film, any material may be used as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and organic material layers. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times.
《有機エレクトロルミネッセンス素子》
本発明の有機エレクトロルミネッセンス素子は、有機発光層を含む有機層および本発明の透明電極を有することを特徴とする。《Organic electroluminescence device》
The organic electroluminescence device of the present invention is characterized by having an organic layer including an organic light emitting layer and the transparent electrode of the present invention.
本発明における有機エレクトロルミネッセンス素子は、本発明の透明電極を陽極として用いることが好ましく、有機発光層、陰極については有機エレクトロルミネッセンス素子に一般的に使われている材料、構成等の任意のものを用いることができる。 The organic electroluminescent device in the present invention preferably uses the transparent electrode of the present invention as an anode, and the organic light-emitting layer and the cathode are made of any material or configuration generally used in organic electroluminescent devices. Can be used.
有機エレクトロルミネッセンス素子の素子構成としては、
陽極/有機発光層/陰極、陽極/ホール輸送層/有機発光層/電子輸送層/陰極、
陽極/ホール注入層/ホール輸送層/有機発光層/電子輸送層/陰極、
陽極/ホール注入層/有機発光層/電子輸送層/電子注入層/陰極、
陽極/ホール注入層/有機発光層/電子注入層/陰極、
等の各種の構成のものを挙げることができる。As an element configuration of the organic electroluminescence element,
Anode / organic light emitting layer / cathode, anode / hole transport layer / organic light emitting layer / electron transport layer / cathode,
Anode / hole injection layer / hole transport layer / organic light emitting layer / electron transport layer / cathode,
Anode / hole injection layer / organic light emitting layer / electron transport layer / electron injection layer / cathode,
Anode / hole injection layer / organic light emitting layer / electron injection layer / cathode,
The thing of various structures, such as these, can be mentioned.
また、本発明において有機発光層に使用できる発光材料またはドーピング材料としては、アントラセン、ナフタレン、ピレン、テトラセン、コロネン、ペリレン、フタロペリレン、ナフタロペリレン、ジフェニルブタジエン、テトラフェニルブタジエン、クマリン、オキサジアゾール、ビスベンゾキサゾリン、ビススチリル、シクロペンタジエン、キノリン金属錯体、トリス(8−ヒドロキシキノリナート)アルミニウム錯体、トリス(4−メチル−8−キノリナート)アルミニウム錯体、トリス(5−フェニル−8−キノリナート)アルミニウム錯体、アミノキノリン金属錯体、ベンゾキノリン金属錯体、トリ−(p−ターフェニル−4−イル)アミン、1−アリール−2,5−ジ(2−チエニル)ピロール誘導体、ピラン、キナクリドン、ルブレン、ジスチルベンゼン誘導体、ジスチルアリーレン誘導体、および各種蛍光色素および希土類金属錯体、燐光発光材料等があるが、これらに限定されるものではない。またこれらの化合物のうちから選択される発光材料を90〜99.5質量部、ドーピング材料を0.5〜10質量部含むようにすることも好ましい。 In addition, as the light emitting material or doping material that can be used in the organic light emitting layer in the present invention, anthracene, naphthalene, pyrene, tetracene, coronene, perylene, phthaloperylene, naphthaloperylene, diphenylbutadiene, tetraphenylbutadiene, coumarin, oxadiazole, bisbenzo Xazoline, bisstyryl, cyclopentadiene, quinoline metal complex, tris (8-hydroxyquinolinato) aluminum complex, tris (4-methyl-8-quinolinato) aluminum complex, tris (5-phenyl-8-quinolinato) aluminum complex, Aminoquinoline metal complex, benzoquinoline metal complex, tri- (p-terphenyl-4-yl) amine, 1-aryl-2,5-di (2-thienyl) pyrrole derivative, pyran, quinacridone Rubrene, distyrylbenzene derivatives, di still arylene derivatives and various fluorescent dyes and rare earth metal complex, there are phosphorescent materials, but is not limited thereto. It is also preferable to include 90 to 99.5 parts by mass of a light emitting material selected from these compounds and 0.5 to 10 parts by mass of a doping material.
有機発光層は上記の材料等を用いて公知の方法によって作製されるものであり、蒸着、塗布、転写などの方法が挙げられる。この有機発光層の厚みは0.5〜500nmが好ましく、特に、0.5〜200nmが好ましい。 The organic light emitting layer is prepared by a known method using the above materials and the like, and examples thereof include vapor deposition, coating, and transfer. The thickness of the organic light emitting layer is preferably 0.5 to 500 nm, particularly preferably 0.5 to 200 nm.
本発明の有機エレクトロルミネッセンス素子は、自発光型ディスプレイ、液晶用バックライト、照明等に用いることができる。本発明の有機エレクトロルミネッセンス素子は、均一にムラなく発光させることができるため、照明用途で用いることが好ましい。 The organic electroluminescence device of the present invention can be used for a self-luminous display, a liquid crystal backlight, illumination, and the like. Since the organic electroluminescence element of the present invention can emit light uniformly and without unevenness, it is preferably used for lighting purposes.
本発明の透明電極は高い導電性と透明性を併せ持ち、液晶表示素子、有機発光素子、無機電界発光素子、電子ペーパー、有機太陽電池、無機太陽電池等の各種オプトエレクトロニクスデバイスや、電磁波シールド、タッチパネル等の分野において好適に用いることができる。その中でも、透明電極表面の平滑性が厳しく求められる有機エレクトロルミネッセンス素子や有機薄膜太陽電池素子の透明電極として特に好ましく用いることができる。 The transparent electrode of the present invention has both high conductivity and transparency, and various optoelectronic devices such as liquid crystal display elements, organic light emitting elements, inorganic electroluminescent elements, electronic paper, organic solar cells, inorganic solar cells, electromagnetic wave shields, touch panels. It can be suitably used in such fields. Among these, it can use especially preferably as a transparent electrode of the organic electroluminescent element and organic thin-film solar cell element by which the smoothness of the transparent electrode surface is calculated | required severely.
以下に本発明を実施例により、更に具体的に説明するが、本発明の構成はこれら実施態様に制限されるものではない。 EXAMPLES The present invention will be described more specifically with reference to examples. However, the configuration of the present invention is not limited to these embodiments.
〈水溶性バインダー樹脂の合成〉
合成例1(P−1の合成:本発明内)
200ml三ツ口フラスコにTHF100mlを加え10分間加熱還流させた後、窒素下で室温に冷却した。I−1:2−ヒドロキシエチルアクリレート(1.74g、15mmol、分子量:116.05)、II−6:ブレンマーPME−200(9.7g、35mmol、分子量:276.16)、AIBN(0.8g、5mmol、分子量:164.11)を加え、5時間加熱還流した。室温に冷却した後、3000mlのMEK(メチルエチルケトン)中に反応溶液を滴下し、1時間攪拌した。MEKをデカンテーション後、100mlのMEKで3回洗浄後、THFでポリマーを溶解し、100mlフラスコへ移した。THFをロータリーエバポレーターにより減圧留去後、50℃で3時間減圧乾燥した。その結果、数平均分子量33700、分子量分布2.4の水溶性バインダー樹脂P−1を10.3g(収率90%)得た。<Synthesis of water-soluble binder resin>
Synthesis Example 1 (Synthesis of P-1: within the present invention)
After adding 100 ml of THF to a 200 ml three-necked flask and heating to reflux for 10 minutes, the mixture was cooled to room temperature under nitrogen. I-1: 2-hydroxyethyl acrylate (1.74 g, 15 mmol, molecular weight: 116.05), II-6: Blemmer PME-200 (9.7 g, 35 mmol, molecular weight: 276.16), AIBN (0.8 g) 5 mmol, molecular weight: 164.11) was added, and the mixture was heated to reflux for 5 hours. After cooling to room temperature, the reaction solution was dropped into 3000 ml of MEK (methyl ethyl ketone) and stirred for 1 hour. After decantation of MEK, the polymer was washed 3 times with 100 ml of MEK, and then the polymer was dissolved in THF and transferred to a 100 ml flask. THF was distilled off under reduced pressure using a rotary evaporator and then dried under reduced pressure at 50 ° C. for 3 hours. As a result, 10.3 g (yield 90%) of water-soluble binder resin P-1 having a number average molecular weight of 33700 and a molecular weight distribution of 2.4 was obtained.
なお、分子量はGPC(Waters2695、Waters社製)で測定した。 The molecular weight was measured by GPC (Waters 2695, manufactured by Waters).
〈GPC測定条件〉
装置:Wagers2695(Separations Module)
検出器:Waters 2414(Refractive Index Detector)
カラム:Shodex Asahipak GF−7M HQ
溶離液:ジメチルホルムアミド(20mM LiBr)
流速:1.0ml/min
温度:40℃
合成例2(P−2の合成:本発明内)
モノマーとしてI−5:ブレンマーAE−90(7.20g、45mmol、分子量:160.07)、II−4:メトキシエトキシエチルアクリレート(0.87g、5mmol、分子量:174.09)を用いた以外は合成例1と同様な方法により、数平均分子量29200、分子量分布2.6、の水溶性バインダー樹脂P−2を7.10g(収率88%)得た。<GPC measurement conditions>
Apparatus: Wagers 2695 (Separations Module)
Detector: Waters 2414 (Refractive Index Detector)
Column: Shodex Asahipak GF-7M HQ
Eluent: Dimethylformamide (20 mM LiBr)
Flow rate: 1.0 ml / min
Temperature: 40 ° C
Synthesis Example 2 (Synthesis of P-2: within the present invention)
Except for using I-5: Blemmer AE-90 (7.20 g, 45 mmol, molecular weight: 160.07), II-4: methoxyethoxyethyl acrylate (0.87 g, 5 mmol, molecular weight: 174.09) as monomers. By the same method as in Synthesis Example 1, 7.10 g (yield 88%) of water-soluble binder resin P-2 having a number average molecular weight of 29200 and a molecular weight distribution of 2.6 was obtained.
合成例3(P−3の合成:本発明内)
モノマーとしてI−8:ブレンマーAE−200(7.10g、25mmol、分子量:284.16)、II−21:N−メチルアクリルアミド(2.13g、25mmol、分子量:85.05)を用いた以外は合成例1と同様な方法により、数平均分子量31700、分子量分布2.1、の水溶性バインダー樹脂P−3を7.75g(収率84%)得た。Synthesis Example 3 (Synthesis of P-3: within the present invention)
Except for using I-8: Blemmer AE-200 (7.10 g, 25 mmol, molecular weight: 284.16), II-21: N-methylacrylamide (2.13 g, 25 mmol, molecular weight: 85.05) as monomers. By the same method as in Synthesis Example 1, 7.75 g (yield 84%) of water-soluble binder resin P-3 having a number average molecular weight of 31700 and a molecular weight distribution of 2.1 was obtained.
合成例4(P−4の合成:本発明内)
モノマーとしてI−12:ブレンマーPP−500(3.04g、5mmol、分子量:608.41)、II−7:ブレンマーPME−400(22.3g、45mmol、分子量:496.59)を用いた以外は合成例1と同様な方法により、数平均分子量33200、分子量分布2.7、の水溶性バインダー樹脂P−4を22.0g(収率87%)得た。Synthesis Example 4 (Synthesis of P-4: within the present invention)
Except that I-12: Blemmer PP-500 (3.04 g, 5 mmol, molecular weight: 608.41), II-7: Blemmer PME-400 (22.3 g, 45 mmol, molecular weight: 496.59) were used as monomers. In the same manner as in Synthesis Example 1, 22.0 g (yield 87%) of water-soluble binder resin P-4 having a number average molecular weight of 33200 and a molecular weight distribution of 2.7 was obtained.
合成例5(P−5の合成:本発明内)
モノマーとしてI−13:ブレンマーGLM(0.22g、1.5mmol、分子量:146.06)、II−12:ブレンマーAE−400(23.4g、48.5mmol、分子量:482.27)を用いた以外は合成例1と同様な方法により、数平均分子量27600、分子量分布3.1、の水溶性バインダー樹脂P−5を21.0g(収率89%)得た。Synthesis Example 5 (Synthesis of P-5: within the present invention)
I-13: Blemmer GLM (0.22 g, 1.5 mmol, molecular weight: 146.06), II-12: Blemmer AE-400 (23.4 g, 48.5 mmol, molecular weight: 482.27) were used as monomers. Except for the above, 21.0 g (yield 89%) of water-soluble binder resin P-5 having a number average molecular weight of 27600 and a molecular weight distribution of 3.1 was obtained in the same manner as in Synthesis Example 1.
合成例6(P−6の合成:本発明内)
モノマーとしてI−13:ブレンマーGLM(0.37g、2.5mmol、分子量:146.06)、II−12:ブレンマーAE−400(22.9g、47.5mmol、分子量:482.27)を用いた以外は合成例1と同様な方法により、数平均分子量31100、分子量分布2.9、の水溶性バインダー樹脂P−6を19.8g(収率85%)得た。Synthesis Example 6 (Synthesis of P-6: within the present invention)
I-13: Blemmer GLM (0.37 g, 2.5 mmol, molecular weight: 146.06), II-12: Blemmer AE-400 (22.9 g, 47.5 mmol, molecular weight: 482.27) were used as monomers. In the same manner as in Synthesis Example 1, 19.8 g (yield 85%) of water-soluble binder resin P-6 having a number average molecular weight of 31100 and a molecular weight distribution of 2.9 was obtained.
合成例7(P−7の合成:本発明内)
モノマーとしてI−13:ブレンマーGLM(3.56g、25mmol、分子量:146.06)、II−12:ブレンマーAE−400(12.1g、25mmol、分子量:482.27)を用いた以外は合成例1と同様な方法により、数平均分子量23100
、分子量分布2.7、の水溶性バインダー樹脂P−7を14.3g(収率91%)得た。Synthesis Example 7 (Synthesis of P-7: within the present invention)
Synthesis example except that I-13: Blemmer GLM (3.56 g, 25 mmol, molecular weight: 146.06), II-12: Blemmer AE-400 (12.1 g, 25 mmol, molecular weight: 482.27) were used as monomers. 1 and the number average molecular weight 23100
Thus, 14.3 g (yield 91%) of water-soluble binder resin P-7 having a molecular weight distribution of 2.7 was obtained.
合成例8(P−8の合成:本発明内)
モノマーとしてI−13:ブレンマーGLM(5.84g、40mmol、分子量:146.06)、II−12:ブレンマーAE−400(4.82g、10mmol、分子量:482.27)を用いた以外は合成例1と同様な方法により、数平均分子量25400、分子量分布2.6、の水溶性バインダー樹脂P−8を9.38g(収率88%)得た。Synthesis Example 8 (Synthesis of P-8: within the present invention)
Synthesis Example except that I-13: Blemmer GLM (5.84 g, 40 mmol, molecular weight: 146.06), II-12: Blemmer AE-400 (4.82 g, 10 mmol, molecular weight: 482.27) were used as monomers. In the same manner as in Example 1, 9.38 g (yield 88%) of water-soluble binder resin P-8 having a number average molecular weight of 25400 and a molecular weight distribution of 2.6 was obtained.
合成例9(P−9の合成:本発明内)
500ml三ツ口フラスコにTHF200mlを加え10分間加熱還流させた後、窒素下で室温に冷却した。2−ヒドロキシエチルアクリレート(10.0g、86mmol、分子量:116.05)、AIBN(1.41g、8.5mmol、分子量:164.11)を加え、5時間加熱還流した。室温に冷却した後、5000mlのMEK中に反応溶液を滴下し、1時間攪拌した。MEKをデカンテーション後、200mlのMEKで3回洗浄後、THFでポリマーを溶解し、100mlフラスコへ移した。THFをロータリーエバポレーターにより減圧留去後、50℃で3時間減圧乾燥した。その結果、数平均分子量35700、分子量分布2.3の水溶性バインダー樹脂Zを9.0g(収率90%)得た。Synthesis Example 9 (Synthesis of P-9: within the present invention)
After adding 200 ml of THF to a 500 ml three-necked flask and heating to reflux for 10 minutes, it was cooled to room temperature under nitrogen. 2-hydroxyethyl acrylate (10.0 g, 86 mmol, molecular weight: 116.05) and AIBN (1.41 g, 8.5 mmol, molecular weight: 164.11) were added, and the mixture was heated to reflux for 5 hours. After cooling to room temperature, the reaction solution was added dropwise into 5000 ml of MEK and stirred for 1 hour. After decantation of MEK, the polymer was washed 3 times with 200 ml of MEK, and then the polymer was dissolved in THF and transferred to a 100 ml flask. THF was distilled off under reduced pressure using a rotary evaporator and then dried under reduced pressure at 50 ° C. for 3 hours. As a result, 9.0 g (yield 90%) of water-soluble binder resin Z having a number average molecular weight of 35700 and a molecular weight distribution of 2.3 was obtained.
水溶性バインダー樹脂Z3.0g、脱水テトラヒドロフラン30mlを100mlフラスコへ投入し、完溶させたのちアイスバスにより内温を10℃以下にした。トリフルオロメタンスルホニルクロリド(0.65g、3.9mmol、分子量:167.93)を脱水テトラヒドロフラン10mlに溶解した溶液を別途調製し、水溶性バインダー樹脂Z溶液中へ30分かけて滴下した。内温は10℃以下を維持した。滴下終了後1時間撹拌後、溶液をろ紙でろ過し、得られた溶液をロータリーエバポレーターにより、溶液を10mlまで濃縮した。この溶液を300mlのエチルアルコール中に反応溶液を滴下し、1時間攪拌した後、ジイソプロピルエーテルを150ml添加し、更に1時間撹拌した。溶液をデカンテーション後、100mlのジイソプロピルエーテルで3回洗浄後、THFでポリマーを溶解し、50mlフラスコへ移した。THFをロータリーエバポレーターにより減圧留去後、50℃で3時間減圧乾燥した。その結果、数平均分子量30700、分子量分布2.1の水溶性バインダー樹脂P−9を2.91g(収率87%)得た。構造は1H−NMRにより確認した。A water-soluble binder resin Z3.0 g and dehydrated tetrahydrofuran 30 ml were charged into a 100 ml flask and completely dissolved, and then the internal temperature was reduced to 10 ° C. or lower with an ice bath. A solution prepared by dissolving trifluoromethanesulfonyl chloride (0.65 g, 3.9 mmol, molecular weight: 167.93) in 10 ml of dehydrated tetrahydrofuran was separately prepared, and dropped into the water-soluble binder resin Z solution over 30 minutes. The internal temperature was maintained at 10 ° C. or lower. After stirring for 1 hour after completion of the dropwise addition, the solution was filtered with a filter paper, and the resulting solution was concentrated to 10 ml by a rotary evaporator. The reaction solution was added dropwise to 300 ml of ethyl alcohol and stirred for 1 hour, 150 ml of diisopropyl ether was added, and the mixture was further stirred for 1 hour. After decantation of the solution, the polymer was washed with 100 ml of diisopropyl ether three times, and then the polymer was dissolved in THF and transferred to a 50 ml flask. THF was distilled off under reduced pressure using a rotary evaporator and then dried under reduced pressure at 50 ° C. for 3 hours. As a result, 2.91 g (yield 87%) of water-soluble binder resin P-9 having a number average molecular weight of 30700 and a molecular weight distribution of 2.1 was obtained. The structure was confirmed by 1 H-NMR.
合成例10(P−10の合成:本発明内)
トリフルオロメタンスルホニルクロリドの代わりに4−メチルベンゾイルクロリド(0.30g、1.9mmol、分子量:154.02)を用いた以外は合成例9と同様な方法により、数平均分子量32200、分子量分布2.0、の水溶性バインダー樹脂P−10を2.84g(収率90%)得た。構造は1H−NMRにより確認した。Synthesis Example 10 (Synthesis of P-10: within the present invention)
A number average molecular weight of 32200 and a molecular weight distribution of 2.200 were obtained in the same manner as in Synthesis Example 9 except that 4-methylbenzoyl chloride (0.30 g, 1.9 mmol, molecular weight: 154.02) was used instead of trifluoromethanesulfonyl chloride. Thus, 2.84 g (yield 90%) of water-soluble binder resin P-10 was obtained. The structure was confirmed by 1 H-NMR.
合成例11(P−11の合成:本発明内)
モノマーとしてI−15:N−メチロールアクリルアミド(0.25g、2.5mmol、分子量:101.05)、II−6:ブレンマーPME−200(13.1g、47.5mmol、分子量:276.16)を用いた以外は合成例1と同様な方法により、数平均分子量35900、分子量分布2.7、の水溶性バインダー樹脂P−11を11.7g
(収率88%)得た。Synthesis Example 11 (Synthesis of P-11: within the present invention)
I-15: N-methylolacrylamide (0.25 g, 2.5 mmol, molecular weight: 101.05), II-6: Blemmer PME-200 (13.1 g, 47.5 mmol, molecular weight: 276.16) as monomers 11.7 g of water-soluble binder resin P-11 having a number average molecular weight of 35,900 and a molecular weight distribution of 2.7 was obtained in the same manner as in Synthesis Example 1 except that it was used.
(Yield 88%).
合成例12(P−12の合成:本発明内)
モノマーとしてI−19:ヒドロキシエチルアクリルアミド(0.58g、5mmol、分子量:115.06)、II−24:アクリロイルモルホリン(6.35g、45mmol、分子量:141.08)を用いた以外は合成例1と同様な方法により、数平均分子量35900、分子量分布2.7、の水溶性バインダー樹脂P−12を6.03g(収率
87%)得た。Synthesis Example 12 (Synthesis of P-12: within the present invention)
Synthesis Example 1 except that I-19: hydroxyethylacrylamide (0.58 g, 5 mmol, molecular weight: 115.06) and II-24: acryloylmorpholine (6.35 g, 45 mmol, molecular weight: 141.08) were used as monomers. By the same method, 6.03 g (yield 87%) of water-soluble binder resin P-12 having a number average molecular weight of 35900 and a molecular weight distribution of 2.7 was obtained.
合成例13(P−13の合成:本発明外)
モノマーとしてI−8のみ5.06gを用いた以外は合成例1と同様な方法により、数平均分子量37000、分子量分布2.7、のバインダー樹脂P−13を4.50g(収率89%)得た。Synthesis Example 13 (Synthesis of P-13: outside the present invention)
4.50 g of binder resin P-13 having a number average molecular weight of 37000 and a molecular weight distribution of 2.7 was obtained in the same manner as in Synthesis Example 1 except that 5.06 g of only I-8 was used as a monomer (yield 89%). Obtained.
合成例14(P−14の合成:本発明外)
モノマーとしてII−7のみ5.33gを用いた以外は合成例1と同様な方法により、数平均分子量39000、分子量分布2.8、のバインダー樹脂P−14を4.80g(収率90%)得た。Synthesis Example 14 (Synthesis of P-14: outside the present invention)
4.80 g of binder resin P-14 having a number average molecular weight of 39000 and a molecular weight distribution of 2.8 was obtained in the same manner as in Synthesis Example 1 except that 5.33 g of II-7 alone was used as a monomer (yield 90%). Obtained.
合成例15(P−Bの合成:本発明外)
モノマーとして2−ヒドロキシエチルアクリレート(3.48g、30mmol、分子量:116.05)、アクリル酸(2.16g、30mmol、分子量:72.02)を用いた以外は合成例1と同様な方法により、ヒドロキシ基を有する樹脂で数平均分子量37100、分子量分布2.6、のバインダー樹脂P−Bを4.29g(収率76%)得た。Synthesis Example 15 (Synthesis of P-B: outside the present invention)
According to the same method as in Synthesis Example 1 except that 2-hydroxyethyl acrylate (3.48 g, 30 mmol, molecular weight: 116.05) and acrylic acid (2.16 g, 30 mmol, molecular weight: 72.02) were used as monomers. 4.29 g (yield 76%) of a binder resin P-B having a number average molecular weight of 37100 and a molecular weight distribution of 2.6 was obtained using a resin having a hydroxy group.
〈フィルム基板の作製〉
厚み100μmのポリエチレンテレフタレートフィルム(コスモシャインA4100、東洋紡績株式会社製)の下引き加工していない面に、JSR株式会社製UV硬化型有機/無機ハイブリッドハードコート材:OPSTAR Z7501を塗布、乾燥後の平均膜厚が4μmになるようにワイヤーバーで塗布した後、80℃、3分で乾燥後、空気雰囲気下、高圧水銀ランプ使用して硬化条件1.0J/cm2で硬化を行い、平滑層を形成した。<Production of film substrate>
A UV curable organic / inorganic hybrid hard coat material: OPSTAR Z7501 manufactured by JSR Co., Ltd. was applied to a non-undercoated surface of a polyethylene terephthalate film (Cosmo Shine A4100, manufactured by Toyobo Co., Ltd.) having a thickness of 100 μm, and dried. After coating with a wire bar so that the average film thickness becomes 4 μm, after drying at 80 ° C. for 3 minutes, curing is performed under a curing condition of 1.0 J / cm 2 using a high-pressure mercury lamp in an air atmosphere, and a smooth layer Formed.
次に、上記平滑層を設けた試料を、この上にガスバリア層を以下に示す条件で、形成した。 Next, a gas barrier layer was formed on the sample provided with the smooth layer under the following conditions.
(ガスバリア層塗布液)
パーヒドロポリシラザン(PHPS、AZエレクトロニックマテリアルズ(株)製アクアミカ NN320)の20質量%ジブチルエーテル溶液をワイヤレスバーにて、乾燥後の(平均)膜厚が、0.30μmとなるように塗布し、塗布試料を得た。(Gas barrier layer coating solution)
A 20% by weight dibutyl ether solution of perhydropolysilazane (PHPS, AZ Electronic Materials Co., Ltd. Aquamica NN320) was applied with a wireless bar so that the (average) film thickness after drying was 0.30 μm. A coated sample was obtained.
(第1工程;乾燥処理)
得られた塗布試料を温度85℃、湿度55%RHの雰囲気下で1分処理し、乾燥試料を得た。(First step; drying treatment)
The obtained coated sample was treated for 1 minute in an atmosphere having a temperature of 85 ° C. and a humidity of 55% RH to obtain a dried sample.
(第2工程;除湿処理)
乾燥試料をさらに温度25℃、湿度10%RH(露点温度−8℃)の雰囲気下に10分間保持し、除湿処理を行った。(Second step; dehumidification treatment)
The dried sample was further held for 10 minutes in an atmosphere of a temperature of 25 ° C. and a humidity of 10% RH (dew point temperature −8 ° C.) to perform dehumidification.
(改質処理A)
除湿処理を行った試料を下記の条件で改質処理を行い、ガスバリア層を形成した。改質処理時の露点温度は−8℃で実施した。(Modification A)
The sample subjected to the dehumidification treatment was modified under the following conditions to form a gas barrier layer. The dew point temperature during the reforming treatment was -8 ° C.
(改質処理装置)
株式会社エム・ディ・コム製エキシマ照射装置MODEL:MECL−M−1−200、波長172nm、ランプ封入ガス Xe
稼動ステージ上に固定した試料を以下の条件で改質処理を行った。(Modification equipment)
Ex. Irradiator MODEL: MECL-M-1-200, wavelength 172 nm, lamp filled gas Xe manufactured by M.D.Com
The sample fixed on the operation stage was modified under the following conditions.
(改質処理条件)
エキシマ光強度 60mW/cm2(172nm)
試料と光源の距離 1mm
ステージ加熱温度 70℃
照射装置内の酸素濃度 1%
エキシマ照射時間 3秒
上記のようにしてガスバリア性を有する透明電極用のフィルム基板を作製した。(Reforming treatment conditions)
Excimer light intensity 60 mW / cm 2 (172 nm)
1mm distance between sample and light source
Stage heating temperature 70 ℃
Oxygen concentration in irradiation device 1%
Excimer irradiation time 3 seconds A film substrate for a transparent electrode having gas barrier properties was produced as described above.
〈第1導電層の形成〉
上記で得られたガスバリア性を有する透明電極用フィルム基板上のバリアのない面に、以下の方法で第1導電層を形成した。<Formation of first conductive layer>
A first conductive layer was formed on the non-barrier surface of the transparent electrode film substrate having gas barrier properties obtained above by the following method.
(細線格子)
細線格子(金属材料)については以下に示す、グラビア印刷または銀ナノワイヤにより作製した。(Thin wire grid)
The fine wire lattice (metal material) was prepared by gravure printing or silver nanowire as shown below.
(グラビア印刷)
銀ナノ粒子ペースト1(M−Dot SLP:三ツ星ベルト製)をRK Print Coat Instruments Ltd製グラビア印刷試験機K303MULTICOATERを用いて線幅50μm、高さ1.5μm、間隔1.0mmの細線格子を印刷した後、110℃、5分の乾燥処理を行った。(Gravure printing)
Silver nanoparticle paste 1 (M-Dot SLP: manufactured by Mitsuboshi Belting Co., Ltd.) was printed on a fine wire grid having a line width of 50 μm, a height of 1.5 μm, and an interval of 1.0 mm using a gravure printing tester K303MULTICOATOR manufactured by RK Print Coat Instruments Ltd. Thereafter, a drying process was performed at 110 ° C. for 5 minutes.
(銀ナノワイヤによるランダムな網目構造)
ランダムな網目構造については以下に示すように銀ナノワイヤを用いて作製した。(Random network structure with silver nanowires)
A random network structure was prepared using silver nanowires as shown below.
銀ナノワイヤ分散液を、銀ナノワイヤの目付け量が0.06g/m2となるように、銀ナノワイヤ分散液を、バーコート法を用いて塗布し110℃、5分乾燥加熱し、銀ナノワイヤ基板を作製した。The silver nanowire dispersion liquid is applied using a bar coating method so that the basis weight of the silver nanowires is 0.06 g / m 2 , dried at 110 ° C. for 5 minutes, and heated to form a silver nanowire substrate. Produced.
銀ナノワイヤ分散液は、Adv.Mater.,2002,14,833〜837に記載の方法を参考に、PVP K30(分子量5万;ISP社製)を利用して、平均短径75nm、平均長さ35μmの銀ナノワイヤを作製し、限外濾過膜を用いて銀ナノワイヤを濾別、洗浄処理した後、ヒドロキシプロピルメチルセルロース60SH−50(信越化学工業社製)を銀に対し25質量%加えた水溶液に再分散し、銀ナノワイヤ分散液を調製した。 Silver nanowire dispersions are described in Adv. Mater. , 2002, 14, 833 to 837, by using PVP K30 (molecular weight 50,000; manufactured by ISP), silver nanowires having an average minor axis of 75 nm and an average length of 35 μm were produced. Silver nanowires are filtered and washed using a filtration membrane, and then redispersed in an aqueous solution in which 25% by mass of hydroxypropylmethylcellulose 60SH-50 (manufactured by Shin-Etsu Chemical Co., Ltd.) is added to silver to prepare a silver nanowire dispersion. did.
実施例1
《透明電極の作製》
〈透明電極TC−101の作製〉
ガスバリア性を有する透明電極用のフィルム基板上にグラビア印刷にて第1導電層を形成した透明電極上に、下記塗布液Aを、押し出し法を用いて、乾燥膜厚300nmになるように押し出しヘッドのスリット間隙を調整して塗布し、110℃、5分で加熱乾燥し、導電性ポリマーと水溶性バインダー樹脂P−1からなる第2導電層を形成し、得られた電極を8×8cmに切り出した。得られた電極をオーブンを用いて110℃、30分加熱することで透明電極TC−101を作製した。Example 1
<< Preparation of transparent electrode >>
<Preparation of transparent electrode TC-101>
The following coating liquid A is extruded on the transparent electrode in which the first conductive layer is formed by gravure printing on the film substrate for the transparent electrode having gas barrier properties, using an extrusion method so as to have a dry film thickness of 300 nm. The slit gap is adjusted and applied, and heated and dried at 110 ° C. for 5 minutes to form a second conductive layer made of a conductive polymer and a water-soluble binder resin P-1, and the obtained electrode is 8 × 8 cm. Cut out. Transparent electrode TC-101 was produced by heating the obtained electrode using an oven at 110 ° C. for 30 minutes.
〈第2導電層の形成〉
(塗布液A)
ポリチオフェン:PEDOT−PSS CLEVIOS PH510
(固形分濃度1.89%、H.C.Starck社製) 1.59g
P−1(固形分20%水溶液) 0.35g
ジメチルスルホキシド(DMSO) 0.08g
(透明電極TC−102〜TC−112の作製)
透明電極1の作製において、塗布液AのP−1を、P−2〜P−12に変更したこと以外は透明電極TC−101の作製と同様にして、透明電極TC−102〜TC−112を作製した。<Formation of second conductive layer>
(Coating liquid A)
Polythiophene: PEDOT-PSS CLEVIOS PH510
(Solid content 1.89%, manufactured by HC Starck) 1.59 g
P-1 (20% solid content aqueous solution) 0.35 g
Dimethyl sulfoxide (DMSO) 0.08g
(Preparation of transparent electrodes TC-102 to TC-112)
In the production of the transparent electrode 1, the transparent electrodes TC-102 to TC-112 were produced in the same manner as the production of the transparent electrode TC-101 except that P-1 of the coating liquid A was changed to P-2 to P-12. Was made.
(透明電極TC−113の作製)
透明電極1の作製において、塗布液AのPEDOT−PSS CLEVIOS PH510(固形分1.89%、H.C.Starck社製)を、ポリアニリンM(固形分濃度6.0%、ティーエーケミカル)0.5gに変更したこと以外は透明電極TC−101の作製と同様にして、透明電極TC−113を作製した。(Preparation of transparent electrode TC-113)
In the production of the transparent electrode 1, PEDOT-PSS CLEVIOS PH510 (solid content 1.89%, manufactured by HC Starck) of the coating solution A was added to polyaniline M (solid content concentration 6.0%, TA Chemical). A transparent electrode TC-113 was produced in the same manner as the production of the transparent electrode TC-101 except that the thickness was changed to 0.5 g.
(透明電極TC−114の作製)
(ランダムな網目構造)
銀ナノワイヤ分散液は、Adv.Mater.,2002,14,833〜837に記載の方法を参考に、PVP K30(分子量5万;ISP社製)を利用して、平均短径75nm、平均長さ35μmの銀ナノワイヤを作製し、限外濾過膜を用いて銀ナノワイヤを濾別、洗浄処理した後、ヒドロキシプロピルメチルセルロース60SH−50(信越化学工業社製)を銀に対し25質量%加えた水溶液に再分散し、銀ナノワイヤ分散液を調製した。(Preparation of transparent electrode TC-114)
(Random network structure)
Silver nanowire dispersions are described in Adv. Mater. , 2002, 14, 833 to 837, by using PVP K30 (molecular weight 50,000; manufactured by ISP), silver nanowires having an average minor axis of 75 nm and an average length of 35 μm were produced. Silver nanowires are filtered and washed using a filtration membrane, and then redispersed in an aqueous solution in which 25% by mass of hydroxypropylmethylcellulose 60SH-50 (manufactured by Shin-Etsu Chemical Co., Ltd.) is added to silver to prepare a silver nanowire dispersion. did.
ランダムな網目構造については以下に示すように銀ナノワイヤを用いて作製した。 A random network structure was prepared using silver nanowires as shown below.
銀ナノワイヤ分散液を、銀ナノワイヤの目付け量が0.06g/m2となるように、銀ナノワイヤ分散液を、バーコート法を用いて塗布し110℃、5分乾燥加熱し、銀ナノワイヤ基板を作製した。The silver nanowire dispersion liquid is applied using a bar coating method so that the basis weight of the silver nanowires is 0.06 g / m 2 , dried at 110 ° C. for 5 minutes, and heated to form a silver nanowire substrate. Produced.
銀ナノワイヤによりランダムな網目構造を形成した透明電極上に、塗布液Aを用いて第2導電層を形成し、8×8cmに切り出した。得られた電極をオーブンを用いて110℃、30分加熱することで透明電極TC−114を作製した。 On the transparent electrode in which a random network structure was formed by silver nanowires, the second conductive layer was formed using the coating liquid A, and cut into 8 × 8 cm. Transparent electrode TC-114 was produced by heating the obtained electrode using an oven at 110 ° C. for 30 minutes.
(比較透明電極TC−115の作製)
透明電極TC−101の作製において、塗布液A中のP−1をP−13に変更したこと以外は透明電極TC−101の作製と同様にして、透明電極TC−115を作製した。(Preparation of comparative transparent electrode TC-115)
In the production of the transparent electrode TC-101, a transparent electrode TC-115 was produced in the same manner as the production of the transparent electrode TC-101 except that P-1 in the coating solution A was changed to P-13.
(比較透明電極TC−116の作製)
透明電極TC−101の作製において、塗布液A中のP−1をP−14に変更したこと以外は透明電極TC−101の作製と同様にして、透明電極TC−116を作製した。(Preparation of comparative transparent electrode TC-116)
In the production of the transparent electrode TC-101, a transparent electrode TC-116 was produced in the same manner as the production of the transparent electrode TC-101 except that P-1 in the coating solution A was changed to P-14.
(比較透明電極TC−117、TC−118の作製)
透明電極1の作製において、塗布液AのP−1を、P−A(ポリ(4−ビニルピリジン)(ポリサイエンス社製))、P−Bに変更したこと以外は透明電極TC−101の作製と同様にして、透明電極TC−117、TC−118を作製した。(Production of comparative transparent electrodes TC-117 and TC-118)
In the production of the transparent electrode 1, the P-1 of the coating solution A was changed to PA (poly (4-vinylpyridine) (manufactured by Polyscience)), P-B. Transparent electrodes TC-117 and TC-118 were produced in the same manner as the production.
《透明電極の評価》
得られた透明電極のフィルム形状、透明性、表面抵抗(導電性)及び膜強度を下記のように評価した。また、透明電極の安定性を評価するため、80℃90%RHの環境下で3日間置く強制劣化試験後の透明電極試料のフィルム形状、透明性、表面抵抗及び膜強度評価を行った。<< Evaluation of transparent electrode >>
The film shape, transparency, surface resistance (conductivity) and film strength of the obtained transparent electrode were evaluated as follows. In addition, in order to evaluate the stability of the transparent electrode, the film shape, transparency, surface resistance and film strength of the transparent electrode sample after the forced deterioration test placed in an environment of 80 ° C. and 90% RH for 3 days were evaluated.
(透明性)
JIS K 7361−1:1997に準拠して、東京電色社製 HAZE METER NDH5000を用いて、全光線透過率を測定し、下記基準で評価した。有機電子デバイスに用いるため、75%以上であることが好ましい。(transparency)
Based on JIS K 7361-1: 1997, total light transmittance was measured using HAZE METER NDH5000 manufactured by Tokyo Denshoku Co., Ltd., and evaluated according to the following criteria. Since it is used for an organic electronic device, it is preferably 75% or more.
◎:80%以上
○:75%〜80%未満
△:70%〜75%未満
×:70%未満
(表面抵抗)
JIS K 7194:1994に準拠して、抵抗率計(ロレスタGP(MCP−T610型):(株)ダイヤインスツルメンツ社製)を用いて表面抵抗を測定した。表面抵抗は100Ω/□以下であることが好ましく、有機電子デバイスを大面積にするには、30Ω/□以下であることが好ましい。◎: 80% or more ○: 75% to less than 80% △: 70% to less than 75% ×: less than 70% (surface resistance)
The surface resistance was measured using a resistivity meter (Loresta GP (MCP-T610 type): manufactured by Dia Instruments Co., Ltd.) in accordance with JIS K 7194: 1994. The surface resistance is preferably 100Ω / □ or less, and preferably 30Ω / □ or less in order to increase the area of the organic electronic device.
(膜強度)
導電層の膜の強度を、テープ剥離法により評価した。(Membrane strength)
The strength of the conductive layer film was evaluated by a tape peeling method.
導電層の上に住友スリーエム社製スコッチテープを用いて圧着/剥離を10回繰り返し、導電層の脱落を目視観察し、下記基準で評価した。 Crimping / peeling was repeated 10 times on the conductive layer using a Scotch tape manufactured by Sumitomo 3M Co., and the dropping of the conductive layer was visually observed and evaluated according to the following criteria.
◎:5回の圧着/剥離で変化無し
○:3回の圧着剥離で変化無し
△:1回の圧着剥離で剥離が見られるが8割以上のパターンが残っている
×:1回の圧着剥離で剥離が見られ、残っているパターンが8割未満
評価の結果を表1に示す。◎: No change after 5 times of pressure bonding / peeling ○: No change after 3 times of pressure peeling / bonding △: Peeling is observed after 1 time of pressure peeling, but more than 80% pattern remains ×: 1 time of pressure peeling Peeling is observed, and the remaining pattern is less than 80%.
表1に示した結果から、透明電極TC−115〜TC−118に対して、透明電極TC−101〜114は、平滑性、導電性、光透過性に優れると共に、高温、高湿度環境下においても平滑性、導電性、光透過性の劣化が少なく、安定性に優れることがわかる。 From the results shown in Table 1, the transparent electrodes TC-101 to 114 are superior to the transparent electrodes TC-115 to TC-118 in terms of smoothness, conductivity and light transmittance, and in a high temperature and high humidity environment. It can be seen that there is little deterioration in smoothness, conductivity, and light transmittance, and the stability is excellent.
実施例2
《有機ELデバイスの作製》
作製した透明電極基板を超純水で洗浄後、パターン辺長20mmの正方形タイル状透明パターン一個が中央に配置されるように30mm角に切り出し、アノード電極に用いて、以下の手順でそれぞれ有機ELデバイスを作製した。正孔輸送層以降は蒸着により形成した。透明電極TC−101〜TC−118を用い、それぞれ有機EL素子OEL−201〜OEL−218を作製した。Example 2
<< Production of organic EL devices >>
The prepared transparent electrode substrate was washed with ultrapure water, cut into a 30 mm square so that one square tile-shaped transparent pattern with a pattern side length of 20 mm was placed in the center, and used for the anode electrode, respectively. A device was fabricated. The hole transport layer and subsequent layers were formed by vapor deposition. Organic EL elements OEL-201 to OEL-218 were produced using transparent electrodes TC-101 to TC-118, respectively.
市販の真空蒸着装置内の蒸着用るつぼの各々に、各層の構成材料を各々素子作製に必要量を充填した。蒸着用るつぼはモリブデン製またはタングステン製の抵抗加熱用材料で作製されたものを用いた。 Each crucible for vapor deposition in a commercially available vacuum vapor deposition apparatus was filled with a constituent material of each layer in a necessary amount for device production. The evaporation crucible used was made of a resistance heating material made of molybdenum or tungsten.
まず、正孔輸送層、有機発光層、正孔阻止層、電子輸送層からなる有機EL層を順次形成した。 First, an organic EL layer including a hole transport layer, an organic light emitting layer, a hole blocking layer, and an electron transport layer was sequentially formed.
〈正孔輸送層の形成〉
真空度1×10−4Paまで減圧した後、化合物1の入った前記蒸着用るつぼに通電して加熱し、蒸着速度0.1nm/秒で蒸着し、厚さ30nmの正孔輸送層を設けた。<Formation of hole transport layer>
After depressurizing to a vacuum of 1 × 10 −4 Pa, the deposition crucible containing compound 1 was heated by energization, and deposited at a deposition rate of 0.1 nm / second to provide a 30 nm thick hole transport layer. It was.
〈有機発光層の形成〉
次に、以下の手順で各発光層を設けた。<Formation of organic light emitting layer>
Next, each light emitting layer was provided in the following procedures.
形成した正孔輸送層上に、化合物2が13.0質量%、化合物3が3.7質量%、化合物5が83.3質量%になるように、化合物2、化合物3及び化合物5を蒸着速度0.1nm/秒で正孔輸送層と同じ領域に共蒸着し、発光極大波長が622nm、厚さ10nmの緑赤色燐光発光の有機発光層を形成した。 Compound 2, Compound 3 and Compound 5 are deposited on the formed hole transport layer so that Compound 2 is 13.0% by mass, Compound 3 is 3.7% by mass, and Compound 5 is 83.3% by mass. Co-evaporation was performed in the same region as the hole transport layer at a speed of 0.1 nm / second to form a green-red phosphorescent organic light emitting layer having a maximum emission wavelength of 622 nm and a thickness of 10 nm.
次いで、化合物4が10.0質量%、化合物5が90.0質量%になるように、化合物4及び化合物5を蒸着速度0.1nm/秒で緑赤色燐光発光の有機発光層と同じ領域に共蒸着し、発光極大波長が471nm、厚さ15nmの青色燐光発光の有機発光層を形成した。 Next, compound 4 and compound 5 are deposited in the same region as the organic light-emitting layer emitting green-red phosphorescence at a deposition rate of 0.1 nm / second so that compound 4 is 10.0% by mass and compound 5 is 90.0% by mass. Co-evaporation was performed to form a blue phosphorescent organic light emitting layer having an emission maximum wavelength of 471 nm and a thickness of 15 nm.
〈正孔阻止層の形成〉
さらに、形成した有機発光層と同じ領域に、化合物6を膜厚5nmに蒸着して正孔阻止層を形成した。<Formation of hole blocking layer>
Further, a hole blocking layer was formed by depositing compound 6 in a thickness of 5 nm on the same region as the formed organic light emitting layer.
〈電子輸送層の形成〉
引き続き、形成した正孔阻止層と同じ領域に、CsFを膜厚比で10%になるように化合物6と共蒸着し、厚さ45nmの電子輸送層を形成した。<Formation of electron transport layer>
Subsequently, in the same region as the formed hole blocking layer, CsF was co-evaporated with compound 6 so as to have a film thickness ratio of 10% to form an electron transport layer having a thickness of 45 nm.
〈カソード電極の形成〉
形成した電子輸送層の上に、透明電極を陽極として陽極外部取り出し端子及び15mm×15mmの陰極形成用材料としてAlを5×10−4Paの真空下にてマスク蒸着し、厚さ100nmの陽極を形成した。<Formation of cathode electrode>
On the formed electron transport layer, a transparent electrode is used as an anode and an anode external takeout terminal and Al as a 15 mm × 15 mm cathode forming material are mask-deposited under a vacuum of 5 × 10 −4 Pa, and a 100 nm thick anode Formed.
さらに、陰極及び陽極の外部取り出し端子が形成できるように、端部を除き陽極の周囲に接着剤を塗り、ポリエチレンテレフタレートを基材としAl2O3を厚さ300nmで蒸着した可撓性封止部材を貼合した後、熱処理で接着剤を硬化させ封止膜を形成し、発光エリア15mm×15mmの有機EL素子を作製した。Further, a flexible seal in which an adhesive is applied around the anode except for the end portion, and polyethylene terephthalate is used as a base material and Al 2 O 3 is deposited in a thickness of 300 nm so that external terminals for the cathode and anode can be formed. After pasting the members, the adhesive was cured by heat treatment to form a sealing film, and an organic EL device having a light emitting area of 15 mm × 15 mm was produced.
《有機EL素子の評価》
得られた有機EL素子について発光ムラ及び寿命を下記のように評価した。<< Evaluation of organic EL elements >>
The obtained organic EL device was evaluated for light emission unevenness and lifetime as follows.
(発光均一性)
発光均一性は、KEITHLEY製ソースメジャーユニット2400型を用いて、直流電圧を有機EL素子に印加し発光させた。1000cd/m2で発光させた有機EL素子OEL−201〜OEL−218について、50倍の顕微鏡で各々の発光輝度ムラを観察した。また、有機EL素子OEL−201〜OEL−218をオーブンにて60%RH、80℃2時間加熱したのち、再び前記23±3℃、55±3%RHの環境下で1時間以上調湿した後、同様に発光均一性を観察した。(Emission uniformity)
For light emission uniformity, a KEITHLEY source measure unit 2400 type was used to apply a DC voltage to the organic EL element to emit light. Regarding the organic EL elements OEL-201 to OEL-218 that emitted light at 1000 cd / m 2 , each light emission luminance unevenness was observed with a 50 × microscope. Further, the organic EL elements OEL-201 to OEL-218 were heated in an oven at 60% RH and 80 ° C. for 2 hours, and then conditioned again in the environment of 23 ± 3 ° C. and 55 ± 3% RH for 1 hour or more. Thereafter, the emission uniformity was observed in the same manner.
◎:完全に均一発光しており、申し分ない
○:ほとんど均一発光しており、問題ない
△:部分的に若干発光ムラが見られるが、許容できる
×:全面にわたって発光ムラが見られ、許容できない
(寿命)
得られた有機EL素子の、初期の輝度を5000cd/m2で連続発光させて、電圧を固定して、輝度が半減するまでの時間を求めた。アノード電極をITOとした有機EL素子を上記と同様の方法で作製し、これに対する比率を求め、以下の基準で評価した。100%以上が好ましく、150%以上であることがより好ましい。A: Completely uniform light emission, satisfactory O: Almost uniform light emission, no problem Δ: Some light emission unevenness is observed partially, but acceptable X: Light emission unevenness is observed over the entire surface, not acceptable (lifespan)
The obtained organic EL device was continuously emitted at an initial luminance of 5000 cd / m 2 , the voltage was fixed, and the time until the luminance was reduced by half was determined. An organic EL element having an anode electrode made of ITO was produced by the same method as described above, the ratio to this was determined, and evaluated according to the following criteria. 100% or more is preferable, and 150% or more is more preferable.
◎:150%以上
○:100〜150%未満
△:80〜100%未満
×:80%未満
評価の結果を表2に示す。A: 150% or more B: 100 to less than 150% B: 80 to less than 100% X: less than 80% The results of evaluation are shown in Table 2.
表2から、比較の有機EL素子OEL−215〜OEL−218は80℃30分の加熱後、発光均一性が著しく劣化するのに対し、本発明の有機EL素子OEL−201〜OEL−214の発光均一性は加熱後でも安定しており耐久性に優れることがわかる。 From Table 2, the comparative organic EL elements OEL-215 to OEL-218 significantly deteriorate in light emission uniformity after heating at 80 ° C. for 30 minutes, whereas the organic EL elements OEL-201 to OEL-214 of the present invention It can be seen that the light emission uniformity is stable even after heating and has excellent durability.
1 パターン状に形成された金属材料からなる第1導電層
2 本発明のバインダー樹脂と導電性ポリマーを含有する第2導電層
3 基材DESCRIPTION OF SYMBOLS 1 1st conductive layer which consists of metal material formed in pattern shape 2 2nd conductive layer containing binder resin and conductive polymer of this invention 3 Base material
Claims (3)
〔式中、Rは水素原子、メチル基を表し、Qは−C(=O)O−、−C(=O)NRa−を表す。Raは水素原子、アルキル基を表し、Aは置換或いは無置換アルキレン基、−(CH 2 CHRbO)x−CH 2 CHRb−を表し、Rbは水素原子、アルキル基を示し、xは平均繰り返しユニット数を表し、1〜100の数である。〕
〔式中、Rは水素原子、メチル基を表し、Qは−C(=O)O−、−C(=O)NRa−を表す。Raは水素原子、アルキル基を表し、Aは置換或いは無置換アルキレン基、−(CH 2 CHRbO)x−CH 2 CHRb−を表し、Rbは水素原子、アルキル基を表す。xは平均繰り返しユニット数を表し、1〜100の数である。yは0、1を表す。Zは、水素原子、アルコキシ基、−O−(C=O)−Rc、−O−SO 2 −Rd、−O−SiRe 3 を表す。Rc、Rd、Reは置換或いは無置換のアルキル基、またはアリール基を表す。また、RaとZが結合してN−Aと共にモルホリン環を形成しても良い。〕 In a transparent conductive film having a first conductive layer made of a metal material formed in a pattern on a substrate and a second conductive layer containing a conductive polymer, the second conductive layer is represented by the following general formula (I) A transparent resin containing a binder resin comprising a structural unit having a hydroxy group and a structural unit having no hydroxy group and having an ester or amide bond represented by the following general formula (II): Conductive film.
[Wherein, R represents a hydrogen atom or a methyl group, and Q represents —C (═O) O— or —C (═O) NRa—. Ra represents a hydrogen atom or an alkyl group, A represents a substituted or unsubstituted alkylene group, — (CH 2 CHRbO) x —CH 2 CHRb—, Rb represents a hydrogen atom or an alkyl group, and x represents the average number of repeating units. And is a number from 1 to 100. ]
[Wherein, R represents a hydrogen atom or a methyl group, and Q represents —C (═O) O— or —C (═O) NRa—. Ra represents a hydrogen atom or an alkyl group, A represents a substituted or unsubstituted alkylene group, — (CH 2 CHRbO) x —CH 2 CHRb—, and Rb represents a hydrogen atom or an alkyl group. x represents the average number of repeating units and is a number from 1 to 100. y represents 0 or 1; Z represents a hydrogen atom, an alkoxy group, —O— (C═O) —Rc, —O—SO 2 —Rd, or —O—SiRe 3 . Rc, Rd, and Re represent a substituted or unsubstituted alkyl group or an aryl group. Moreover, Ra and Z may combine to form a morpholine ring together with NA. ]
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JP2002179954A (en) * | 2000-10-10 | 2002-06-26 | Deha Manteku Co Ltd | Photo-setting transparent conductive coating material containing aqueous conductive polymer solution, and transparent conductive film formed by using it |
JP2009004348A (en) * | 2006-09-28 | 2009-01-08 | Fujifilm Corp | Spontaneous emission display, transparent conductive film, method for manufacturing transparent conductive film, electroluminescence device, solar cell transparent electrode, and electronic paper transparent electrode |
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