JP5629480B2 - THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to a technique for manufacturing an amorphous silicon (a-Si) TFT (thin film transistor).

In general, the characteristics of amorphous silicon TFTs are worse than those of polycrystalline silicon (p-Si) TFTs. For example, the mobility of amorphous silicon TFTs is generally 0.8 cm ² / Vs or less, which is much lower than the mobility of polycrystalline silicon TFTs. That is, the on-current is small. Further, for example, the threshold voltage of the amorphous silicon TFT varies more greatly than the threshold voltage of the polycrystalline silicon TFT. That is, the operation reliability is low.

  In order to improve the characteristics of the amorphous silicon TFT, it is effective to use microcrystalline silicon for the channel region of the TFT. Patent Documents 1 and 2 disclose an etch stopper type TFT using microcrystalline silicon in the channel region of the TFT. In the TFT manufacturing method of Patent Document 1, an adhesion improving layer is formed on a microcrystalline silicon layer, and a channel protective layer is formed thereon. In the TFT manufacturing method of Patent Document 2, a channel protective layer is formed on a channel layer made of microcrystalline silicon, and a plurality of microcrystalline silicon layers are stacked thereon.

JP 2009-231641 A JP 2008-91599 A

  As a method for easily forming a microcrystalline silicon layer, first, there is a method for improving film forming conditions and a film forming apparatus. However, with this method, it is difficult to greatly improve the mobility. Secondly, annealing by a furnace using solid phase growth is exemplified. However, in this method, the substrate is warped by being exposed to a high temperature environment for a long time. Thirdly, annealing using a laser (laser annealing) can be mentioned. With laser annealing, the mobility can be significantly improved without damaging the substrate.

  Therefore, in order to greatly improve the characteristics of the amorphous silicon TFT, it is desirable to include a microcrystalline silicon layer forming step by laser annealing in the manufacturing process. For example, in the manufacturing methods described in Patent Documents 1 and 2, the amorphous silicon film is irradiated with a laser to form a microcrystalline silicon layer before the adhesion improving layer and the channel protective layer are formed. In this case, in order to obtain a desired crystal grain size, it is necessary to sufficiently increase the irradiation condition (irradiation energy density). However, the higher the irradiation condition, the more likely the amorphous silicon film jumps (ablation due to residual hydrogen in the film).

  In view of the above-described circumstances, the present invention has an object to solve the problem of suppressing film jump in the manufacturing process while greatly improving the characteristics of the amorphous silicon TFT.

In order to solve the above problems, a manufacturing method of a TFT according to the present invention includes a step of forming a gate electrode on a substrate, a step of forming a gate insulating film covering the gate electrode, and a step of forming on the gate insulating film. A step of forming an amorphous semiconductor film, a step of forming a channel protective layer in a region overlapping the gate electrode on the semiconductor film in plan view, and irradiating the semiconductor film and the channel protective layer with laser Thus, the method includes a step of microcrystallizing a portion of the semiconductor film overlapping with the channel protective layer, and a step of forming a source electrode and a drain electrode connected to the semiconductor film.
According to this manufacturing method, even if the irradiation condition of the laser over the channel protective layer is lowered so that at least a part of the semiconductor film that does not overlap with the channel protective layer in plan view remains amorphous, Due to the heat storage action of the channel protective layer, the portion of the semiconductor film that overlaps the channel protective layer in plan view can be microcrystallized. That is, according to this manufacturing method, the film irradiation can be suppressed by suppressing the laser irradiation condition low. In addition, in the TFT manufactured by this manufacturing method, the portion of the semiconductor film that overlaps the channel protective layer in plan view is microcrystallized, so its characteristics are compared with those of the conventional one that is not microcrystallized. Greatly improved. In addition, in this TFT, at least a part of the portion that does not overlap with the channel protective layer in plan view remains amorphous, so that off current can be suppressed without being multilayered.

  The thickness of the semiconductor film is preferably 30 nm to 100 nm, and most preferably 50 nm. The thickness of the channel protective layer is preferably 30 nm or more and 80 nm or less, and most preferably 50 nm. The laser may be an excimer laser using ultraviolet light or a solid laser using visible light.

  When the laser is a solid-state laser using visible light, the gate insulating film has a thickness of 150 nm to 200 nm, and in the microcrystallization step, the gate of the semiconductor film is irradiated by the laser. The portion overlapping the electrode in plan view may be microcrystallized. According to this manufacturing method, the thickness of the gate insulating film is thinner than that of a general amorphous silicon TFT, and the amount of visible light reflected by the gate electrode and incident on the gate insulating film increases. In addition, the heat storage action of the gate insulating film becomes stronger. Therefore, the portion of the semiconductor film that overlaps with the gate electrode in plan view can be microcrystallized, and the portion that does not overlap with the gate electrode in plan view can remain amorphous. Therefore, the same effect as described above can be obtained. In addition, since the range of microcrystallization can be adjusted by patterning the gate electrode, there is an advantage that the degree of freedom in design is high.

In order to solve the above problems, a TFT according to the present invention includes a gate electrode formed on a substrate, a gate insulating film covering the gate electrode, and an amorphous source formed on the gate insulating film. A semiconductor film having a region, a drain region, and a microcrystalline channel region; a channel protective layer covering the channel region of the semiconductor film; a source electrode overlapping the source region; and a drain electrode overlapping the drain region It is provided with.
In this TFT, the portion of the semiconductor film that overlaps the channel protective layer in plan view is microcrystallized, so that the characteristics are greatly improved as compared with the conventional one that is not microcrystallized. In addition, in this TFT, the portion that does not overlap with the gate electrode in plan view remains amorphous, so that off-current can be suppressed without multilayering. In this TFT manufacturing process, laser irradiation is performed through the channel protective layer, and the irradiation conditions are lowered so that the portion of the semiconductor film that does not overlap the gate electrode in plan view remains amorphous. However, the portion of the semiconductor film that overlaps the gate electrode in plan view can be microcrystallized by the heat storage action of the channel protective layer and the gate insulating film. That is, according to this TFT, in the manufacturing process, film irradiation can be suppressed by suppressing laser irradiation conditions low.

  In order to solve the above problems, an electro-optical device according to the present invention includes the above-described TFT and an electro-optical element that is formed on the substrate and whose optical characteristics change according to supplied electric energy, The thin film transistor controls electrical energy supplied to the electro-optic element. In order to solve the above problems, an electronic apparatus according to the present invention includes the above electro-optical device.

It is sectional drawing which shows the manufacturing process of TFT which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the next process of the process shown in FIG. FIG. 4 is a diagram showing the relationship between the green laser irradiation condition and the crystal grain size for each film thickness L3 of the channel protective layer 14; It is a figure which illustrates the relationship between the irradiation conditions of the excimer laser using an ultraviolet-ray, and a crystal grain diameter. It is sectional drawing which shows the manufacturing process of TFT which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows the structure of the liquid crystal device to which TFT concerning 1st Embodiment of this invention is applied. It is sectional drawing which shows the structure of the EL apparatus to which TFT which concerns on 1st Embodiment of this invention is applied. 1 is a perspective view illustrating a configuration of a mobile phone to which an electro-optical device according to the invention is applied. 1 is a perspective view illustrating a configuration of a mobile phone to which an electro-optical device according to the invention is applied. 1 is a perspective view showing a configuration of a portable information terminal to which an electro-optical device according to the invention is applied.

  Embodiments of the present invention will be described below with reference to the drawings. However, in each figure, the dimensions and scales of each part are appropriately different from the actual ones. In the following description, wirings, layers (films), and processes that are not directly related to the present invention are not touched, but embodiments including these wirings, layers (films), and processes are also included in the scope of the present invention. sell. Moreover, the material which comprises each part which appears in the following description can be changed suitably.

<A: First Embodiment>
1 and 2 are cross-sectional views showing the manufacturing process of the TFT according to the first embodiment of the present invention. The TFT according to the present embodiment is an etch stopper type TFT having a bottom gate structure, and the manufacturing process of the TFT manufactures an etch stopper type amorphous silicon TFT having a bottom gate structure except for a part thereof. It is the same as the general process for doing this, and is specifically as described below.

  First, as shown in FIG. 1A, the gate electrode 11 is patterned on the substrate 10 (step of forming the gate electrode). Next, as shown in FIG. 1B, a gate insulating film 12 is formed on the substrate 10 with silicon nitride (SiNx) (step of forming a gate insulating film). In this formation, the gate insulating film 12 covers the gate electrode 11 in plan view. When the thickness of the gate insulating film 12 at this time (distance between the contact surface between the gate insulating film 12 and the gate electrode 11 and the surface of the gate insulating film 12 opposite to the gate electrode 11) is L1, L1 may be the same as the film thickness of the gate insulating film of a general amorphous silicon TFT, and is 300 nm in this embodiment.

  Next, as shown in FIG. 1C, an amorphous semiconductor film 13 is formed on the gate insulating film 12 (step of forming a semiconductor film). In this formation, the semiconductor film 13 covers the gate electrode 11 in plan view. The thickness of the semiconductor film 13 at this time is L2. L2 is preferably 30 nm or more and 100 nm or less, and is 50 nm which is optimum in this embodiment. In the semiconductor film 13, a channel region 13 c is formed in at least part of a region overlapping with the gate electrode 11 in plan view, and a region adjacent to the channel region 13 c and partially overlapping with the gate electrode 11 in plan view is formed. The source region 13s and the drain region 13d are formed. In the completed TFT, the channel region 13c functions as a channel, the source region 13s functions as a source, and the drain region 13d functions as a drain.

Next, as shown in FIG. 1D, the channel protective layer 14 is patterned on the semiconductor film 13 with an oxide film or a silicon nitride film (SiO ₂ or SiNx) (step of forming a channel protective layer). In this formation, the channel protective layer 14 covers the channel region 13c in plan view. The channel protective layer 14 is a layer for protecting the channel region 13c from deterioration due to etching described later. In the present embodiment, the channel protective layer 14 overlaps only the channel region 13c in plan view, but may overlap the region adjacent to the channel region 13c. Further, the film thickness L3 of the channel protective layer 14 is preferably 30 nm or more and 80 nm or less, and is 50 nm which is optimum in this embodiment.

  Next, laser annealing is performed (step of microcrystallization). That is, by irradiating the semiconductor film 13 and the channel protective layer 14 with laser, a portion of the semiconductor film 13 that overlaps the channel protective layer 14 in a plan view, that is, the channel region 13c is microcrystallized. In this embodiment, a solid laser using visible light, more specifically, a green laser having a wavelength of 532 nm is used. The laser irradiation conditions are determined as described below.

  FIG. 3 is a diagram illustrating the relationship between the irradiation condition (irradiation energy density) of the green laser and the crystal grain size for each film thickness (L3) of the channel protective layer 14. In this figure, when the irradiation condition is L3 = 0 nm, that is, when the channel protective layer 14 is not present, the irradiation condition (normal condition) for obtaining the normal crystal grain size A is shown as a percentage. ing. In this embodiment, the purpose is microcrystallization, and the crystal grain size B to be obtained is smaller than the crystal grain size A. Therefore, even if the channel protective layer 14 is not present, the irradiation condition is about 90%. Become.

  In addition, it is not restricted to a green laser that irradiation conditions become low if the crystal grain diameter to be obtained becomes small. For example, in the case of an excimer laser using ultraviolet rays (for example, ultraviolet rays having a wavelength of 308 nm), as illustrated in FIG. 4, the irradiation energy density at which a normal crystal grain size A can be obtained when the channel protective layer 14 is not present. When it is 100%, the crystal grain size B can be obtained under irradiation conditions of about 70%.

  As is clear from FIG. 3, the relationship between the irradiation condition and the crystal grain size depends on the film thickness (L3) of the channel protective layer. Specifically, in the range of 0 nm <L3, the irradiation condition decreases as L3 is shorter. For example, the irradiation condition when L3 = 100 nm is 100% or more, but the irradiation condition when L3 = 80 nm is about 90%, the irradiation condition when L3 = 70 nm is about 76%, and L3 = 60 nm. The irradiation condition in this case is about 68%, and the irradiation condition in the case of L3 = 30 nm is about 63%. That is, in order to achieve microcrystallization under irradiation conditions of about 90% or less, it is necessary to satisfy L3 ≦ 80 nm. If L3 is shortened, the irradiation conditions can be further reduced.

  The reason why the irradiation condition can be set below the normal condition in the range of 0 nm <L3 ≦ 80 nm is that the channel protective layer 14 in this range has a high heat storage effect. The “heat storage action” is an action that accumulates heat and decreases the cooling rate of the semiconductor film 13. If the channel protective layer 14 has a high heat storage effect, the cooling rate of the semiconductor film 13 can be greatly reduced, and therefore the semiconductor film 13 can be sufficiently annealed without being heated so much.

  By the way, a film jump becomes difficult to occur, so that irradiation conditions are low. Therefore, L3 should be minimized within the range of 0 nm <L3 ≦ 80 nm. However, in order to protect the channel region 13c from deterioration due to etching described later, 30 nm ≦ L3 is preferable. Therefore, L3 is preferably 30 nm or more and 80 nm or less, and is 50 nm in this embodiment. L3 = 50 nm is an optimum length that can sufficiently protect the channel region 13c while sufficiently reducing the irradiation energy density.

  As described above, in this embodiment, the laser is irradiated under the irradiation condition (about 65%) that can obtain the crystal grain size B when L3 = 50 nm. Thereby, the semiconductor film 13 is modified. That is, as shown in FIG. 2E, a portion of the semiconductor film 13 that overlaps the channel protective layer 14 in a plan view (portion L3 = 50 nm: channel region 13c) is microcrystallized. On the other hand, portions of the semiconductor film 13 that do not overlap with the channel protective layer 14 in plan view (portions where L3 = 0 nm: the source region 13s and the drain region 13d) remain amorphous. This is because crystallization does not occur when L3 = 0 nm under irradiation conditions of about 65% (see FIG. 3).

  Thus, in the present embodiment, the irradiation conditions are sufficiently low, so that the maximum temperature of the semiconductor film 13 in laser annealing is suppressed to a low level. Moreover, in this embodiment, since the channel protective layer 14 having a high heat storage action is employed, the cooling rate of the semiconductor film 13 is significantly reduced. Therefore, according to the present embodiment, film jump can be suppressed. Next, as illustrated in FIG. 2F, contact layers 15 s and 15 d, a source electrode 16 s, and a drain electrode 16 d are formed on the semiconductor film 13. Details are as follows.

First, an amorphous semiconductor film (N ⁺ semiconductor film) doped at a high concentration is formed on the semiconductor film 13. This formation is performed so that the N ⁺ semiconductor film covers the channel protective layer 14 and overlaps the source region 13s and the drain region 13d in plan view. Next, by etching the N ⁺ semiconductor film, a contact layer 15s that overlaps the source region 13s in plan view and a contact layer 15d that overlaps the drain region 13d in plan view are formed. This etching also removes the portion of the N ⁺ semiconductor film that overlaps the channel region 13c in plan view. However, since the channel region 13c is protected by the channel protective layer 14, the channel region 13c is deteriorated by this etching. There is no fear. The contact layers 15s and 15d are both layers for realizing ohmic contact (ohmic contact).

  Next, a conductive film is formed using a metal over the semiconductor film 13. This formation is performed so that the conductive film covers the channel protective layer 14 in plan view and overlaps the source region 13s and the drain region 13d. Next, by etching the conductive film, a source electrode 16s that overlaps the contact layer 15s (source region 13s) in plan view and a drain electrode 16d that overlaps the contact layer 15d (drain region 13d) in plan view are formed (see FIG. A step of forming a source electrode and a drain electrode). This etching also removes a portion of the conductive film that overlaps the channel region 13c in plan view. However, since the channel region 13c is protected by the channel protective layer 14, the channel region 13c may be deteriorated by this etching. Absent.

  The TFT thus completed is formed of a gate electrode 11 formed on the substrate 10, a gate insulating film 12 formed on the substrate 10 and covering the gate electrode 11 in plan view, and a semiconductor on the gate insulating film 12. A semiconductor film 13 having a channel region 13c, a source region 13s, and a drain region 13d; a channel protective layer 14 formed on the semiconductor film 13 and covering the channel region 13c in plan view; A source electrode 16s that overlaps one end of the protective layer 14 and the source region 13s in plan view, and a drain electrode 16d that is formed on the semiconductor film 13 and overlaps the other end of the channel protective layer 14 and the drain region 13d in plan view. Prepare.

  In the TFT according to the present embodiment, the portion of the semiconductor film 13 that overlaps the channel protective layer 14 in a plan view (channel region 13c) is microcrystallized. (Reliability) is significantly better than an amorphous silicon TFT in which the channel region 13c is not microcrystallized. By the way, if the entire region of the semiconductor film 13 is microcrystallized, the off current of the TFT becomes large. In order to suppress this off-current, it is effective to make the contact layers 15s and 15d multilayer, but the structure becomes complicated. On the other hand, according to the TFT according to the present embodiment, the portion that does not overlap with the channel protective layer 14 in a plan view remains amorphous, so that the off-current can be suppressed without being multilayered.

  In this embodiment, a green laser is used for annealing, but a solid laser using visible light other than green light may be used, or an excimer laser using ultraviolet light may be used. For example, when the excimer laser having the characteristics shown in FIG. 4 is employed, the ratio of the irradiation condition to the normal condition can be made smaller than the ratio (65/100) when the green laser is employed.

<B: Second Embodiment>
FIG. 5 is a cross-sectional view showing a part of the manufacturing process of the TFT according to the second embodiment of the present invention. The TFT manufacturing process according to the second embodiment is different from the TFT manufacturing process according to the first embodiment in that the gate electrode 11 is a reflective electrode that reflects visible light, and the thickness of the gate insulating film 12 is different. Only the point that is L4 and the part of the semiconductor film 13 other than the channel region 13c are also modified by laser annealing using a green laser. Note that a solid-state laser that uses visible light other than green light may also be employed in this embodiment.

  As is apparent from FIG. 5D, in the second embodiment, in the step of forming the gate electrode, the gate electrode 11 that is a reflective electrode is patterned on the substrate 10 to form the gate insulating film. In the process, a gate insulating film 12 is formed of silicon nitride on the substrate 10. In the formation of the gate insulating film 12, the film thickness is L4. L4 <L1. L4 is preferably 150 nm or more and 200 nm or less, and is 150 nm in this embodiment. Further, as shown in FIG. 5D, in this embodiment as well, in the same way as in the first embodiment, after the channel protective layer 14 is patterned in the step of forming the channel protective layer, the above-described microcrystallization step is performed. Perform laser annealing at Therefore, as shown in FIG. 5E, the channel region 13c of the semiconductor film 13 is microcrystallized.

  By the way, a part of the laser beam irradiated to a portion of the semiconductor film 13 that does not overlap the channel protective layer 14 in plan view passes through the semiconductor film 13 and is reflected by the gate electrode 11 through the gate insulating film 12. Re-enters the gate insulating film 12. Further, as described above, L4 <L1. Therefore, the heat storage action of the gate insulating film 12 is significantly stronger than the heat storage action of the gate insulating film 12 in the first embodiment. Therefore, in the second embodiment, as shown in FIG. 5E, not only the channel region 13c but also the adjacent region 13sn that overlaps the gate electrode 11 in the source region 13s in the plan view is the gate of the drain region 13d. The adjacent region 13dn overlapping the electrode 11 in plan view is also microcrystallized.

  Thus, in this embodiment, the region of the semiconductor film 13 that overlaps with the gate electrode 11 in plan view is microcrystallized by the heat storage action of the channel protective layer 14 and the gate electrode 11. However, the crystal grain sizes of the adjacent region 13 sn and the adjacent region 13 dn are both smaller than the crystal particle size of the channel region 13 c. From the viewpoint of strengthening the heat storage effect of the gate insulating film 12, L4 should be as short as possible. However, if L4 is too short, the insulating action of the main body is impaired. This is the reason why L4 is preferably 150 nm or more and 200 nm or less.

  As shown in FIG. 5F, the TFT according to this embodiment includes a gate electrode 11 that is a reflective electrode formed on the substrate 10 and a gate electrode 11 that is formed on the substrate 10 and covers the gate electrode 11 in plan view. A gate insulating film 12, a semiconductor film 13 formed on the gate insulating film 12 and having a channel region 13c, a source region 13s, and a drain region 13d, and formed on the semiconductor film 13, and the channel region 13c is viewed in plan view. The channel protective layer 14 is covered with a source electrode 16s that is formed on the semiconductor film 13 and overlaps one end of the channel protective layer 14 and the source region 13s in plan view. The channel protective layer 14 A drain electrode 16d that overlaps the other end and the drain region 13d in plan view is provided.

In the TFT according to this embodiment, since the channel region 13c is microcrystallized, the characteristics (the magnitude of the on-current and the reliability of operation) are amorphous silicon TFTs that do not microcrystallize the channel region 13c. Better than In addition, since the portion that does not overlap with the gate electrode 11 in plan view remains amorphous, off-state current can be suppressed without multilayering. In addition, since the region to be microcrystallized in the semiconductor film 13 can be controlled not by the channel protective layer 14 but by the gate electrode 11, there is an advantage that the degree of freedom in design is high. Further, since the adjacent region 13sn and the adjacent region 13dn are microcrystallized and the crystal grain size thereof is smaller than the crystal grain size of the channel region 13c, the same effect as when a so-called LDD (Lightly Doped Drain) structure is adopted Is obtained.
In the present embodiment, an example in which the crystal grain size B (120 to 130 nm) is obtained by microcrystallization is described, but the present invention is not limited to this. In the present embodiment, the term “microcrystal” refers to a range in which the particle size is smaller than 300 nm, which is referred to as polycrystalline, and is larger than 10 nm, which is referred to as amorphous. The crystal grain size can be confirmed with an electron microscope. When the crystal grain size cannot be confirmed, it is amorphous, but it can also be confirmed by detecting a specific peak wave number from Raman scattering measurement. That is, when a sharp peak appears in the vicinity of 520 cm ⁻¹ , it is polycrystalline silicon (Si), and when no peak appears and there is a gradual peak at 480 cm ^−1, it is amorphous silicon (Si).

<C: Electro-optical device>
Next, an electro-optical device to which the TFT according to the first embodiment is applied will be described. However, the same application can be applied to the TFT according to the second embodiment. The electro-optical device is a device that includes an electro-optical element whose optical characteristics change according to supplied electric energy. Examples of the electro-optical device include a liquid crystal device including a liquid crystal element as an electro-optical element, and an EL device including an EL (electro-luminescent) element as an electro-optical element.

  FIG. 6 is a cross-sectional view showing the configuration of the liquid crystal device to which the TFT according to the first embodiment is applied. However, illustration of wirings and layers (films) not directly related to the present invention is omitted. The liquid crystal device shown in FIG. 6 is a reflective liquid crystal device, and is configured by forming a TN (Twisted Nematic) type reflective liquid crystal element on a substrate 10 on which a TFT is formed. The reflective liquid crystal element includes a first electrode 21 that is a reflective electrode that reflects visible light, an alignment film 22 formed thereon, a liquid crystal layer 23 formed thereon, and an alignment formed thereon. A film 24 and a light transmissive second electrode 25 formed thereon are provided, and the light reflectivity changes according to the voltage between the first electrode 21 and the second electrode 25. The first electrode 21 is in contact with the drain electrode 16d. That is, in this liquid crystal device, the TFT controls the light reflectance of the reflective liquid crystal element by controlling the driving voltage of the reflective liquid crystal element.

  In addition to the first electrode 21, a light reflecting layer that reflects visible light may be provided. In this case, a light transmissive transparent electrode is employed as the first electrode 21. Further, a transmissive liquid crystal element may be employed instead of the reflective liquid crystal element. That is, a transmissive liquid crystal device including a backlight may be used. In this case, a light transmissive transparent electrode is employed as the first electrode 21. Further, a liquid crystal element of a method different from the TN method may be adopted.

  FIG. 7 is a cross-sectional view showing a configuration of an EL device to which the TFT according to the first embodiment is applied. However, illustration of wirings and layers (films) not directly related to the present invention is omitted. The EL device shown in FIG. 7 is configured by forming EL elements on a substrate 10 on which TFTs are formed. The EL element is an organic EL element or an inorganic EL element, and includes a first electrode 31 in contact with the drain electrode 16d, an EL layer 32 formed thereon, and a light transmissive second electrode 33 formed thereon. The EL layer 32 emits light with luminance according to the current or voltage between the first electrode 31 and the second electrode 33. That is, in this EL device, the TFT controls the luminance of the EL element by controlling the driving current or driving voltage of the EL element.

  A plurality of TFTs and electro-optical elements formed on the substrate 10 may be provided. When a plurality of TFTs are formed on the substrate 10, the above-described microcrystallization may be performed for all TFTs, or the above-described microcrystallization may be performed for some TFTs. For example, in the case of an electro-optical device in which a plurality of electro-optical elements are arranged as pixels, in a plan view, a TFT that overlaps a region where the pixels are arranged is not microcrystallized, and a TFT that does not overlap the region is microcrystallized. May be performed.

<D: Electronic equipment>
Next, an electronic apparatus to which an electro-optical device including a plurality of electro-optical elements is applied will be described. An electro-optical apparatus having a single electro-optical element may be applied to the electronic apparatus.
FIG. 8 is a perspective view illustrating a configuration of a portable personal computer that employs an electro-optical device including a plurality of electro-optical elements as the display device 100. The personal computer 2000 includes a display device 100 that displays various images, and a main body 2010 on which a power switch 2001 and a keyboard 2002 are installed.

  FIG. 9 is a perspective view illustrating a configuration of a mobile phone that employs an electro-optical device including a plurality of electro-optical elements as the display device 200. The cellular phone 3000 includes a plurality of operation buttons 3001 and scroll buttons 3002, and a display device 200 that displays various images. By operating the scroll button 3002, the screen displayed on the display device 200 is scrolled.

  FIG. 10 is a perspective view illustrating a configuration of a personal digital assistant (PDA) that employs an electro-optical device including a plurality of electro-optical elements as the display device 300. The portable information terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and a display device 300 that displays various images. When the power switch 4002 is operated, various information such as an address book and a schedule book are displayed on the display device 300.

DESCRIPTION OF SYMBOLS 10 ... Substrate, 11 ... Gate electrode, 12 ... Gate insulating film, 13 ... Semiconductor film, 14 ... Channel protective layer, 15s, 15d ... Contact layer, 16s ... Source electrode, 16d ... Drain electrode .

Claims (5)

Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming an amorphous semiconductor film on the gate insulating film;
Forming a channel protective layer in a region overlapping the gate electrode on the semiconductor film in plan view;
Irradiating the semiconductor film and the channel protective layer with a laser to microcrystallize a portion of the semiconductor film overlapping the channel protective layer;
Possess and forming said semiconductor film on the connected source and drain electrodes,
The gate insulating film has a thickness of 150 nm to 200 nm,
The laser is a solid-state laser using visible light,
In the microcrystallization process, a portion of the semiconductor film that overlaps the gate electrode in a plan view is microcrystallized by the laser irradiation . The semiconductor film has a thickness of 30 nm to 100 nm,
The method of manufacturing a thin film transistor according to claim 1, wherein the thickness of the channel protective layer is 30 nm or more and 80 nm or less. A gate electrode formed on the substrate;
A gate insulating film having a thickness of 150 nm to 200 nm covering the gate electrode;
A semiconductor film formed on the gate insulating film and having an amorphous source region and drain region, and a microcrystalline channel region;
A channel protective layer covering the channel region of the semiconductor film;
A source electrode overlapping the source region;
A drain electrode overlapping the drain region ,
The microcrystalline channel region is formed in a portion of the semiconductor film that overlaps the gate electrode in plan view by irradiating the semiconductor film and the channel protective layer with a solid-state laser using visible light. A thin film transistor. A thin film transistor according to claim 3 ;
An electro-optic element formed on the substrate and having optical characteristics that change according to the supplied electrical energy;
The electro-optical device, wherein the thin film transistor controls electric energy supplied to the electro-optical element. An electronic apparatus comprising the electro-optical device according to claim 4 .

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