JP5609716B2 - 光反射性異方性導電接着剤及び発光装置 - Google Patents
光反射性異方性導電接着剤及び発光装置 Download PDFInfo
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- JP5609716B2 JP5609716B2 JP2011048625A JP2011048625A JP5609716B2 JP 5609716 B2 JP5609716 B2 JP 5609716B2 JP 2011048625 A JP2011048625 A JP 2011048625A JP 2011048625 A JP2011048625 A JP 2011048625A JP 5609716 B2 JP5609716 B2 JP 5609716B2
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
該熱硬化性樹脂組成物における光反射性針状絶縁粒子並びに光反射性球状絶縁粒子の配合量が、熱硬化性樹脂組成物に対してそれぞれ1〜50体積%であり、且つ光反射性球状絶縁粒子の光反射性針状絶縁粒子に対する配合比(V/V)が1:1〜10である光反射性異方性導電接着剤を提供する。
(異方性導電接着剤の作製)
光反射性白色針状絶縁粒子(金属酸化物ウィスカ)及び/または光反射性白色球状絶縁粒子(金属酸化物粒子)と、導電粒子として、球状のアクリル樹脂粒子の表面に金メッキ層が形成された金被覆樹脂粒子(平均粒径5μm)または酸化チタン微粒子で被覆された光反射性導電粒子(平均粒径5μm)10質量部を、脂環式エポキシ化合物(CEL2021P、ダイセル化学工業(株))50質量部とメチルヘキサヒドロ無水フタル酸50質量部とを含有する透明なエポキシ系熱硬化性樹脂組成物(屈折率1.45)に、表1の添加量で混合し、異方性導電接着剤を調製した。
作製した異方性導電接着剤を白色板上に厚さ100μmとなるように塗布し、200℃で1分間加熱して硬化させた。得られた硬化物について、分光光度計((株)島津製作所製 UV3100)を用いて硫酸バリウムを標準とした波長450nmの光に対する全反射率(鏡面反射及び拡散反射)を測定した。得られた結果を表1に示す。実用上、光反射率は30%超であることが望ましい。
100μmピッチの銅配線にNi/Au(5.0μm厚/0.3μm厚)メッキ処理した配線を有するガラスエポキシ基板に、バンプホルダ(FB700、(株)カイジョー)を用いて15μm高の金(Au)バンプを形成した。この金バンプ付きエポキシ基板に、光反射性異方性導電接着剤を用いて、青色LED(Vf=3.2V(If=20mA))素子を200℃、20秒、1kg/チップの条件でフリップチップ実装し、テスト用LEDモジュールを得た。
得られたテスト用LEDモジュールについて、全光束量測定システム(積分全球)(LE−2100、大塚電子(株)製)を用いて全光束量を測定した(測定条件 If=20mA(定電流制御))。得られた結果を表1に示す。実用上、全光束量は、300mlm超であることが望まれる。
導通信頼性及び耐クラック性について、以下の2種類の冷熱サイクル試験(TCT)を行うことにより評価した。
テスト用LEDモジュールを、−40℃及び100℃の雰囲気に各30分間曝し、これを1サイクルとする冷熱サイクルを1000サイクル行った。
<TCT−B>
テスト用LEDモジュールを、−55℃及び125℃の雰囲気に各30分間曝し、これを1サイクルとする冷熱サイクルを1000サイクル行った。
A: 初期Vf値からのVf値の上昇分が3%未満である場合
B: 初期Vf値からのVf値の上昇分が3%以上5%未満である場合
C: 初期Vf値からのVf値の上昇分が5%以上である場合
A: クラックの発生が全く観察されない場合
B: クラックの発生が僅かに観察されるが、実用上問題のないレベルである場合
C: クラックの発生が観察される場合
2 無機粒子
3 光反射層
4 熱可塑性樹脂
10、20 光反射性導電粒子
11 熱硬化性樹脂組成物の硬化物
21 基板
22 接続端子
23 LED素子
24 n電極
25 p電極
26 バンプ
100 光反射性異方性導電接着剤の硬化物
200 発光装置
Claims (14)
- 発光素子を配線板に異方性導電接続するために使用する光反射性異方性導電接着剤であって、熱硬化性樹脂組成物、導電粒子、光反射性針状絶縁粒子及び光反射性球状絶縁粒子を含有し、
該熱硬化性樹脂組成物における光反射性針状絶縁粒子並びに光反射性球状絶縁粒子の配合量が、熱硬化性樹脂組成物に対してそれぞれ1〜50体積%であり、且つ光反射性球状絶縁粒子の光反射性針状絶縁粒子に対する配合比(V/V)が1:1〜10である光反射性異方性導電接着剤。 - 該光反射性針状絶縁粒子が、酸化チタン、酸化亜鉛及びチタン酸塩からなる群より選択される少なくとも1種の無機粒子である請求項1記載の光反射性異方性導電接着剤。
- 該光反射性針状絶縁粒子が、酸化亜鉛の表面をシラン剤で処理してなることを特徴とする請求項1記載の光反射性異方性導電接着剤。
- 該光反射性針状絶縁粒子のアスペクト比が、10よりも大きく35未満であることを特徴とする請求項1〜3のいずれかに記載の光反射性異方性導電接着剤。
- 光反射性針状絶縁粒子の屈折率(JIS K7142)が、熱硬化性樹脂組成物の硬化物の屈折率(JIS K7142)よりも大きい請求項1〜4のいずれかに記載の光反射性異方性導電接着剤。
- 光反射性球状絶縁粒子が、酸化チタン、窒化ホウ素、酸化亜鉛及び酸化アルミニウムからなる群より選択される少なくとも一種の無機粒子である請求項1〜5のいずれかに記載の光反射性異方性導電接着剤。
- 光反射性球状絶縁粒子の平均粒径が、0.1〜30μmである請求項1〜6のいずれかに記載の光反射性異方性導電接着剤。
- 光反射性球状絶縁粒子の屈折率(JIS K7142)が、熱硬化性樹脂組成物の硬化物の屈折率(JIS K7142)よりも大きい請求項6又は7記載の光反射性異方性導電接着剤。
- 光反射性球状絶縁粒子が、球状銀粒子の表面を絶縁性樹脂で被覆した樹脂被覆金属粒子である請求項1〜8のいずれかに記載の光反射性異方性導電接着剤。
- 熱硬化性樹脂組成物が、エポキシ樹脂と酸無水物系硬化剤とを含有する請求項1〜9のいずれかに記載の光反射性異方性導電接着剤。
- 導電粒子が、金属材料で被覆されているコア粒子と、その表面に酸化チタン粒子、酸化亜鉛粒子又は酸化アルミニウム粒子から選択された少なくとも一種の無機粒子から形成された光反射層とからなる光反射性導電粒子である請求項1〜10のいずれかに記載の光反射性異方性導電接着剤。
- 熱硬化性樹脂組成物100質量部に対する光反射性導電粒子の配合量が、1〜100質量部である請求項11記載の光反射性異方性導電接着剤。
- 請求項1〜12のいずれかに記載の光反射性異方性導電接着剤を介して、発光素子がフリップチップ方式で配線板に実装されている発光装置。
- 発光素子が、発光ダイオードである請求項13記載の発光装置。
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JP2011048625A JP5609716B2 (ja) | 2011-03-07 | 2011-03-07 | 光反射性異方性導電接着剤及び発光装置 |
EP12755243.8A EP2685513B1 (en) | 2011-03-07 | 2012-02-23 | Light-reflective anisotropic conductive adhesive and light-emitting device |
PCT/JP2012/054411 WO2012121021A1 (ja) | 2011-03-07 | 2012-02-23 | 光反射性異方性導電接着剤及び発光装置 |
US13/995,033 US20130264602A1 (en) | 2011-03-07 | 2012-02-23 | Light-reflective anisotropic conductive adhesive and light-emitting device |
CN201280011864.2A CN103403896B (zh) | 2011-03-07 | 2012-02-23 | 光反射性各向异性导电粘接剂以及发光装置 |
KR1020137023354A KR101911564B1 (ko) | 2011-03-07 | 2012-02-23 | 광반사성 이방성 도전 접착제 및 발광 장치 |
TW101106490A TWI553088B (zh) | 2011-03-07 | 2012-02-29 | A light reflective anisotropic conductive adhesive and a light emitting device |
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Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5617210B2 (ja) * | 2009-09-14 | 2014-11-05 | デクセリアルズ株式会社 | 光反射性異方性導電接着剤及び発光装置 |
JP5916334B2 (ja) * | 2011-10-07 | 2016-05-11 | デクセリアルズ株式会社 | 異方性導電接着剤及びその製造方法、発光装置及びその製造方法 |
DE102013104195A1 (de) * | 2013-04-25 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
KR101513641B1 (ko) | 2013-08-20 | 2015-04-22 | 엘지전자 주식회사 | 표시장치 |
JP6292808B2 (ja) | 2013-09-13 | 2018-03-14 | デクセリアルズ株式会社 | 接着剤、及び発光装置 |
DE102013110114A1 (de) * | 2013-09-13 | 2015-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
CN105531836A (zh) | 2013-09-26 | 2016-04-27 | 迪睿合株式会社 | 发光装置、各向异性导电粘接剂、发光装置制造方法 |
JP6450923B2 (ja) * | 2013-12-20 | 2019-01-16 | パナソニックIpマネジメント株式会社 | 電子部品実装システムおよび電子部品実装方法ならびに電子部品実装装置 |
US9812625B2 (en) | 2014-02-18 | 2017-11-07 | Nichia Corporation | Light-emitting device having resin member with conductive particles |
JP6347635B2 (ja) * | 2014-03-19 | 2018-06-27 | デクセリアルズ株式会社 | 異方性導電接着剤 |
US10435601B2 (en) | 2014-05-23 | 2019-10-08 | Dexerials Corporation | Adhesive agent and connection structure |
CN107408616A (zh) | 2015-03-18 | 2017-11-28 | 迪睿合株式会社 | 发光装置制造方法 |
DE102015112967A1 (de) * | 2015-08-06 | 2017-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
TWI569473B (zh) * | 2015-08-26 | 2017-02-01 | 邱羅利士公司 | 封裝結構及其製法 |
CN105552192A (zh) * | 2015-12-08 | 2016-05-04 | 李小鹏 | 一种多晶反射绝缘板及其制备方法 |
TWM521008U (zh) * | 2016-01-27 | 2016-05-01 | Lite On Technology Corp | 車燈裝置及其發光模組 |
DE102016106494A1 (de) * | 2016-04-08 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
JP2018088498A (ja) * | 2016-11-29 | 2018-06-07 | デクセリアルズ株式会社 | 異方性導電接着剤 |
JP6868388B2 (ja) * | 2016-12-26 | 2021-05-12 | 日亜化学工業株式会社 | 発光装置および集積型発光装置 |
JP7014948B2 (ja) * | 2017-06-13 | 2022-02-02 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
WO2019167819A1 (ja) * | 2018-03-01 | 2019-09-06 | 住友ベークライト株式会社 | ペースト状接着剤組成物及び半導体装置 |
WO2020095796A1 (ja) * | 2018-11-07 | 2020-05-14 | 日本化学工業株式会社 | 被覆粒子及びそれを含む導電性材料、並びに被覆粒子の製造方法 |
CN110283561B (zh) * | 2019-05-30 | 2021-09-10 | 天津德高化成科技有限公司 | 一种led显示屏贴片式分立器件用封装树脂组合物及其用途 |
JP2021103609A (ja) | 2019-12-24 | 2021-07-15 | デクセリアルズ株式会社 | 異方性導電フィルム |
US20230103341A1 (en) * | 2020-06-22 | 2023-04-06 | Nitto Denko Corporation | Optical element bonding/reinforcing resin composition, and optical module produced by using the same |
JP7464862B2 (ja) | 2022-04-21 | 2024-04-10 | 日亜化学工業株式会社 | 発光装置、光源 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5183594A (en) * | 1988-08-29 | 1993-02-02 | Matsushita Electric Industrial Co., Ltd. | Conductive resin composition containing zinc oxide whiskers having a tetrapod structure |
JPH11168235A (ja) | 1997-12-05 | 1999-06-22 | Toyoda Gosei Co Ltd | 発光ダイオード |
JP4098403B2 (ja) * | 1998-06-01 | 2008-06-11 | 富士通株式会社 | 接着剤、接着方法及び実装基板の組み立て体 |
JP3637277B2 (ja) * | 2000-03-21 | 2005-04-13 | 大塚化学ホールディングス株式会社 | 難燃剤、及び難燃性樹脂組成物、及び成形物、及び電子部品 |
JP2001332124A (ja) * | 2000-05-22 | 2001-11-30 | Toshiba Chem Corp | 導電性ペーストおよび光半導体装置 |
US20050228097A1 (en) * | 2004-03-30 | 2005-10-13 | General Electric Company | Thermally conductive compositions and methods of making thereof |
EP2078736A1 (en) * | 2006-10-31 | 2009-07-15 | Techno Polymer Co., Ltd. | Heat-dissipating resin composition, substrate for led mounting, reflector, and substrate for led mounting having reflector portion |
JP5608955B2 (ja) * | 2007-02-06 | 2014-10-22 | 日亜化学工業株式会社 | 発光装置及びその製造方法並びに発光装置用成形体 |
JP2009197185A (ja) * | 2008-02-25 | 2009-09-03 | Hitachi Chem Co Ltd | 透明熱伝導接着フィルム及びその用途 |
JP5422921B2 (ja) * | 2008-05-28 | 2014-02-19 | デクセリアルズ株式会社 | 接着フィルム |
JP5402109B2 (ja) * | 2009-02-27 | 2014-01-29 | デクセリアルズ株式会社 | 異方性導電フィルム及び発光装置 |
JP5126175B2 (ja) * | 2009-07-27 | 2013-01-23 | 住友ベークライト株式会社 | 金属含有ペーストおよび半導体装置 |
EP2581955A4 (en) * | 2010-06-09 | 2015-12-30 | Dexerials Corp | LIGHT REFLECTING AND ELECTRICALLY CONDUCTIVE ANISOTROPE PASTE AND LIGHT-EMITTING DEVICE |
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US20130264602A1 (en) | 2013-10-10 |
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EP2685513A1 (en) | 2014-01-15 |
EP2685513B1 (en) | 2015-10-21 |
CN103403896B (zh) | 2016-10-05 |
KR101911564B1 (ko) | 2018-10-24 |
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KR20140052950A (ko) | 2014-05-07 |
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