JP5663250B2 - Resin composition for semiconductor encapsulation and resin-encapsulated semiconductor device - Google Patents

Description

  The present invention relates to an epoxy resin composition for semiconductor encapsulation, which is a sealing material for an element used when manufacturing an electronic component, and a resin-encapsulated semiconductor device obtained using the same.

In recent years, with the high-density mounting of electronic components on a printed wiring board, the surface mount type package has changed from the conventional pin insertion type package to the mainstream. Surface-mount ICs, LSIs, and the like are thin and small packages with a high mounting density, and the volume occupied by the elements in the package has increased, and the thickness of the package has become very thin. In addition, the increase in the chip area and the increase in the number of pins have progressed due to the multi-functionality and large capacity of the elements, and further the increase in the number of pads has led to a reduction in pad pitch and a reduction in pad size, so-called narrow pad pitch. Progressing.
However, since the pitch between the electrodes cannot be reduced as much as the semiconductor element on the substrate on which the semiconductor element is mounted, it is possible to increase the number of terminals by increasing the length of the wire drawn from the semiconductor element or by tying the wires. ing. However, when the wire becomes thin, the wire is easily flown by the resin injection pressure in the subsequent resin sealing step. This tendency is particularly remarkable in the side gate method.
Therefore, a so-called compression molding method has come to be used as a method of resin-sealing electronic elements such as semiconductor chips (see Patent Document 1). In this compression molding method, a resin is supplied so as to oppose an object to be sealed (for example, a substrate provided with an electronic element such as a semiconductor chip) held in a mold, Resin sealing is performed by compressing the resin.
In this way, according to the compression molding method, the amount of resin flowing in a direction substantially parallel to the main surface of the object to be sealed can be reduced, so that the object to be sealed is damaged by the flow of the resin. Can be reduced. For example, it is possible to reduce the damage of the wire-bonded wiring and the like due to the flow of the resin.
Therefore, by using a compression molding molding material obtained by molding a compression molding material made of a thermosetting resin composition softened or melted at 70 to 150 ° C. into a pellet or sheet shape having a thickness of 3.0 mm or less. A film-like resin sheet for encapsulating a semiconductor that can be sealed with a small flow and a high filling property has been proposed (see, for example, Patent Document 2).
However, even in the compression molding, if the melt viscosity of the resin of the sealing material is too high, there is a problem that the moldability is not sufficient, for example, a wire flow occurs, and unfilling occurs. For this reason, it has been studied to lower the melt viscosity by reducing the content of the inorganic filler, but since the decrease in the content of the inorganic filler causes a warp of the semiconductor device, There has been a demand for a resin molding material having a low melt viscosity while maintaining the filling amount.
By the way, in order to seal a semiconductor element etc., a thermosetting resin composition, in particular, a thermosetting resin composition mainly composed of an epoxy resin and a phenol resin as a curing agent is often used. Many proposals have been made to use nitrogen-modified phenolic resins in order to improve properties (patent documents 3 to 9).
Even when such a nitrogen-modified phenolic resin is used, it is insufficient in terms of reducing wire flow and improving moldability by the molten resin.

JP 2007-307843 A JP 2006-216899 A JP-A-9-207271 Japanese Patent Laid-Open No. 10-324791 Japanese Patent Laid-Open No. 2001-40071 Japanese Patent Laid-Open No. 2001-234036 JP 2005-302997 A JP 2006-111808 A JP 2007-137944 A

  The present invention has been made in order to solve such problems, and a resin composition for semiconductor encapsulation, a resin-encapsulated semiconductor device, in particular, compression molding, in which the wire flow rate due to molten resin during molding is extremely small. An object of the present invention is to provide an optimal resin composition for encapsulating a semiconductor and a resin encapsulated semiconductor device.

  As a result of intensive studies to achieve the above object, the present inventors have used an epoxy resin having a specific structure and a nitrogen-modified phenol resin having a specific structure as a curing agent, and using a curing accelerator and spherical silica. By using the resin composition used in combination, a resin composition for semiconductor encapsulation having a low melt viscosity and a very low wire flow rate at the time of molding was obtained, and it was found that the above object was achieved, and the present invention was completed. .

That is, the present invention
(1) (A) biphenyl type epoxy resin, (B) nitrogen-containing phenol resin, (C) curing accelerator and (D) spherical silica as essential components, and (B) nitrogen-containing phenol resin is represented by the following general formula ( 1)

Represents
Here, R ¹ and R ² may be monovalent and divalent groups of the same skeleton, or may be monovalent and divalent groups of different skeletons. R ³ is selected from a hydrogen atom or an alkyl group and an alkoxy group, and may be the same or different from each other. n is an integer of 1 to 5]
The (D) spherical silica is contained in an amount of 80 mass% to 95 mass% based on the resin composition, and has a load of 10 kg (shear stress 1.23 × 10 ⁵ Pa). A semiconductor device formed by compression molding together with a semiconductor element using a resin composition for compression molding for semiconductor encapsulation having a melt viscosity of 4 to 13 Pa · s in the environment),
(2) The semiconductor device according to (1), wherein the (C) curing accelerator is an imidazole compound,
(3) The semiconductor device according to (1) or (2), wherein the linear expansion coefficient after curing is 40 ppm / ° C. or less, and the flexural modulus at 260 ° C. is 1.5 GPa or less,
(4) The semiconductor device according to any one of (1) to (3), wherein the spherical silica (D) is contained in an amount of 85% by mass to 93% by mass on the basis of the resin composition.
( 5 ) The semiconductor device according to any one of (1) to (4), wherein the thickness of the resin composition layer after sealing is 0.2 to 1.5 mm.

  According to the present invention, since the melt viscosity can be kept low without increasing the coefficient of linear expansion of the cured product, the resin flow composition for semiconductor encapsulation having excellent moldability and extremely low wire flow rate due to the molten resin during molding. Things are provided. Further, by sealing with this semiconductor sealing resin composition, a resin-encapsulated semiconductor device with good reliability can be obtained.

Hereinafter, the present invention will be described in detail.
First, the component (A) will be described.
The biphenyl type epoxy resin (A) used in the present invention is not particularly limited as long as it is an epoxy resin having a biphenyl skeleton. The biphenyl skeleton in the present invention includes those obtained by hydrogenating at least one aromatic ring of biphenyl rings.
For example, 4,4′-bis (2,3-epoxypropoxy) biphenyl or 4,4′-bis (2,3-epoxypropoxy) -3,3 ′, 5,5′-tetramethylbiphenyl is the main component. And epoxy resin obtained by reacting epichlorohydrin with a biphenol compound such as 4,4′-biphenol or 4,4 ′-(3,3 ′, 5,5′-tetramethyl) biphenol. It is done. Among them, 4,4′-bis (2,3-epoxypropoxy) -3,3 ′, 5,5′-tetramethylbiphenyl, 4,4′-dihydroxy-3,3 ′, 5,5′-tetramethyl An epoxy resin mainly composed of glycidyl ether of biphenyl is preferable.
Specific examples of such commercially available compounds include YX-4000 (epoxy equivalent 185), YX-4000K (epoxy equivalent 185), and YX-4000H (epoxy), which are biphenyl type epoxy resins manufactured by Japan Epoxy Resin Co., Ltd. Equivalent 193), YX-4000HK (epoxy equivalent 193), YL-6121H (epoxy equivalent 172) and the like.
Furthermore, a biphenyl type epoxy resin represented by the following general formula (2) having an aralkyl skeleton at both ends can also be used.

(Where m is an integer of 1 to 4)
Examples of commercially available biphenyl type epoxy resins having an aralkyl skeleton at both ends as described above include NC-3000-H, NC-3000S, NC-3000S-H, which are biphenyl type epoxy resins manufactured by Nippon Kayaku Co., Ltd. It is done.
By adopting a biphenyl type epoxy resin, a resin composition for semiconductor encapsulation which can maintain the melt viscosity in the optimum range even when blended with a high content of spherical silica of component (D) described later, and is excellent in heat resistance. Can be obtained.
About the compounding quantity of a component (A), it demonstrates later in relation to the following component (B).

Next, the component (B) will be described.
The nitrogen-containing phenol resin of component (B) is a compound represented by the general formula (1).
In the general formula (1), R ¹ and R ² may be monovalent and divalent groups of the same skeleton, or may be monovalent and divalent groups of different skeletons.
In formulas (1-2), (1-3), (1-5) and (1-6), R ³ is selected from a hydrogen atom or an alkyl group and an alkoxy group, and may be the same or different from each other. Good. n is an integer of 1-5.
For example, when R ¹ is (1-1) and R ² is (1-4), the compound represented by the general formula (1) is imidazolidilinone, phenol, and formaldehyde in the presence of an acidic catalyst. Can be synthesized as shown in the following reaction formula.

Among the above six groups, R ¹ is preferably (1-1) and R ² is (1-4) from the viewpoint of easy availability of raw materials.
From the viewpoint of easy availability of raw materials, R ³ is preferably a hydrogen atom.
When R ³ is an alkyl group, it is a methyl group, an ethyl group, a propyl group, a butyl group or the like, and is preferably a methyl group. In the case of the alkoxy group of R ³ , it is a methoxy group, an ethoxy group, a propoxy group, a butoxy group or the like, and is preferably a methoxy group.
n is an integer of 1-5. When n is more than this range, it is excellent in terms of the balance between flame retardancy and moldability.
Moreover, a commercial item can be used for the compound represented by General formula (1).
As a commercial item, TAM-005 etc. which are the nitrogen modification phenol compounds represented by the said General formula (1) by Showa Denko KK are mentioned.

The said component (A) and component (B) determine a compounding ratio as follows.
The blending ratio of the biphenyl type epoxy resin of the component (A) and the nitrogen-modified phenol resin of the component (B) is such that the phenolic hydroxyl group of the component (B) is 0.5 to 1 with respect to one epoxy group of the component (A). It is preferable to adjust so that it may be 6. It is especially preferable that it is 0.6-1.4. If it is less than 0.5, the hydroxyl group is insufficient, the proportion of homopolymerization of the epoxy group increases, and the glass transition temperature may be lowered. On the other hand, when the number exceeds 1.6, the ratio of the phenolic hydroxyl group is increased, the reactivity is lowered, the crosslinking density is decreased, and a cured product may not be obtained with sufficient strength.

Next, component (C) will be described.
The curing accelerator of component (C) used in the present invention is preferably an imidazole, such as imidazole, 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1- Cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium Meritite, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')] -Ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2' -Methylimidazolyl- (1 ')]-ethyl-s-triazine, 2-phenylimidazole isocyanuric acid adduct, 2-methylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl- 4-methyl-5-hydroxymethylimidazole, 2-phenylimidazoline, 1-cyanoethyl-2-phenyl-4,5-di (2-cyanoethoxy ) Methylimidazole, 1-dodecyl-2-methyl-3-benzyl-imidazolium chloride, mention may be made of 1-benzyl-2-phenylimidazole hydrochloride, and 1-benzyl-2-phenyl imidazolium trimellitate, and the like.
From the viewpoint of good fluidity and moldability, 2-heptadecylimidazole is particularly preferable.
These imidazoles can be used alone or in admixture of two or more.
The blending amount of the component (C) curing accelerator is usually 0.5 to 5. with respect to 100 parts by mass of the total amount of the biphenyl type epoxy resin of the component (A) and the nitrogen-modified phenol resin of the component (B). It is selected in the range of about 0 parts by mass, preferably 1.0 to 3.0 parts by mass, more preferably 1.5 to 2.5 parts by mass.

Next, the component (D) will be described.
The spherical silica of the component (D) used in the present invention is preferably one having a mass average particle diameter of 10 μm to 30 μm. If the average particle size is less than 10 μm, the fluidity is lowered, the moldability is impaired, and if the average particle size exceeds 30 μm, foaming tends to occur, which is not preferable.
The spherical silica may be mixed with fused silica powder.
The blending ratio of the fused silica powder to the spherical silica of component (D) is preferably 80 to 100% by mass, and more preferably 90 to 100% by mass. If it is 80% by mass or less, the warpage characteristic is lowered. In addition to the fused silica powder, crystalline silica and fine synthetic silica can be blended.
By blending an appropriate amount of fine synthetic silica, fluidity and moldability are improved.
Furthermore, the compounding ratio in the total resin composition of the spherical silica which is a component (D) needs to be 80 mass%-95 mass%, Preferably, it is 85 mass%-93 mass%. When the blending ratio of the spherical silica is less than 80% by mass of the entire resin composition, the linear expansion coefficient increases and the dimensional accuracy, moisture resistance, mechanical strength, etc. of the molded product decrease. On the other hand, if it exceeds 95% by mass, the melt viscosity is increased and the fluidity is lowered, or the moldability is lowered and the practical use becomes difficult.

In addition, in the resin composition for semiconductor encapsulation of the present invention, in addition to the above components, inorganic fillers (alumina, chip, etc.) that are generally blended in this type of composition within a range not impairing the effects of the present invention. Silicon nitride, aluminum nitride), coupling agents, synthetic waxes, natural waxes, higher fatty acids, release agents such as higher fatty acid metal salts, colorants such as carbon black and cobalt blue, silicone oils, silicone rubbers, etc. A quality agent, hydrotalcite, an ion scavenger, etc. can be mix | blended.
As the coupling agent, an epoxy silane, amino silane, ureido silane, vinyl silane, alkyl silane, organic titanate, aluminum alcoholate, or the like is used. These can be used alone or in admixture of two or more. From the viewpoints of flame retardancy and curability, aminosilane coupling agents are preferable, and γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropylmethyldimethoxysilane, γ- Aminopropylmethyldiethoxysilane and the like are preferable.
The compounding quantity of the said component is about 0.05-3 mass% in the resin composition for semiconductor sealing, Preferably it is about 0.1-1 mass%.

In preparing the resin composition for semiconductor encapsulation of the present invention, (A) biphenyl type epoxy resin as described above, (B) nitrogen-modified phenol resin represented by the general formula (1), (C) curing After thoroughly mixing the accelerator, (D) spherical silica, and the various components blended as necessary with a mixer, etc., heat-mix with a hot roll, kneader, etc., then cool and solidify. After pulverizing to an appropriate size, the pulverized product is sieved and classified.
Moreover, the melt viscosity of the resin composition for semiconductor encapsulation of the present invention is preferably 2 to 50 Pa · s, and more preferably 2 to 20 Pa · s.
If the melt viscosity is less than 2 Pa · s, the burr becomes large, and if it is more than 50 Pa · s, the moldability is inferior, the filling property becomes insufficient, and voids may be generated.
The method for pulverizing the resin composition for semiconductor encapsulation of the present invention is not particularly limited, and a general pulverizer can be used. A cutting mill, a ball mill, a cyclone mill, a hammer mill, a vibration mill, a cutter mill, and a grinder mill are preferable, and a speed mill is more preferable.
In the classification step, the pulverized product of the semiconductor sealing resin composition obtained by the pulverization is adjusted to a particle aggregate having a predetermined particle size distribution by sieving classification and air classification. Classification using a sieve of about 7 to 500 mesh can be successfully applied to the resin-encapsulated semiconductor device of the present invention.
The particle diameter of the pulverized product is preferably 0.05 mm or more and 3 mm or less, more preferably 0.1 mm or more and 2 mm or less. If the particle diameter is less than 0.05 mm, there is a risk that problems such as measurement errors due to mixing of finely agglomerated powder and scattered fine powder adhere to the mold surface and form surface voids, On the other hand, if the thickness exceeds 3 mm, aggregates may remain, and any of them may cause problems such as poor appearance.
In the resin-encapsulated semiconductor device of the present invention, the above-described resin composition for encapsulating a semiconductor according to the present invention is molded into a sheet shape, and then placed in a molding die to melt and soften the sheet of the resin composition. It can be obtained by sealing the resin and the object to be sealed by applying a compressive force by moving the movable side mold upward.
The molding conditions in this case are generally a molding temperature of 120 to 200 ° C. and a molding pressure of 2 to 20 MPa. The resin-encapsulated semiconductor device of the present invention is obtained by sealing by compression molding under such molding conditions.

The linear expansion coefficient after curing of the resin composition for semiconductor encapsulation of the present invention is preferably 40 ppm / ° C. or less, and if the linear expansion coefficient is larger than 40 ppm / ° C., warpage of the sealed semiconductor device (package) increases. It is not preferable. Moreover, it is preferable that the upper limit of the bending elastic modulus in 260 degreeC of hardened | cured material is 1.5 GPa or less.
If the upper limit value of the flexural modulus at 260 ° C. of the cured product is greater than 1.5 GPa, it is not preferable because warpage after reflow may increase or peeling or cracks may occur.
In addition, the kind of semiconductor chip sealed with the resin composition for semiconductor sealing at this time is not particularly limited, but the thickness of the semiconductor device after resin sealing is 0.2 to 1.5 mm. Such a thing is preferable.
As described above, by molding the semiconductor sealing resin composition of the present invention by a compression molding method, it is possible to obtain a resin-encapsulated semiconductor device with a small warpage and a small wire flow.

  EXAMPLES Next, although an Example and a comparative example demonstrate this invention further in detail, this invention is not limited to these Examples at all.

[Example 1]
YX-4000HK [Brand name, 3,3 ′, 5,5′-tetramethyl-4,4′-dihydroxybiphenyl epoxidized product, epoxy equivalent, manufactured by Japan Epoxy Resin Co., Ltd., as the biphenyl type epoxy resin of component (A) 193, hydrolyzable chlorine 450 ppm, melting point 105 ° C., melt viscosity 11 mPa · s at 150 ° C.] 5.2 parts by mass, a nitrogen-containing phenol resin represented by the general formula (1) of component (B)

2P4MHZ [trade name, Shikoku Kasei Co., Ltd.] 2-phenyl-4-hydroxymethyl-5-methylimidazole] 0.25 parts by mass, FB-875FC [trade name, manufactured by Denki Kagaku Kogyo Co., Ltd., spherical silica with an average particle size of 12 μm] 90 as component (D) As a mass part and other components, as a silane coupling agent, Z-6883 [trade name, 3-phenylaminopropyltrimethoxysilane manufactured by Toray Dow Corning Co., Ltd.] 0.3 mass part, and MA-100 [ Product name, carbon black manufactured by Mitsubishi Chemical Co., Ltd.] 0.25 parts by mass using a mixer at room temperature, and then at 120 ° C. using a hot roll. And then heat-kneaded. After cooling, the mixture was pulverized using a speed mill (made by Gohashi Seisakusho Co., Ltd.), and then passed through a 100-mesh sieve to obtain a resin composition for semiconductor encapsulation.

[Example 2]
Example, except that 75 parts by mass of FB-875FC and 15 parts by mass of Admafine SO-25R (trade name, manufactured by Admatex, spherical silica having an average particle size of 0.5 μm) were used as the spherical silica of component (D). In the same manner as in Example 1, a resin composition for semiconductor encapsulation was obtained.

[Example 3]
For semiconductor encapsulation similar to Example 1, except that 8.0 parts by mass of YX-4000HK, 6.1 parts by mass of TAM-005, 0.23 parts by mass of 2P4MHZ, and 85 parts by mass of FB-875FC were used. A resin composition was obtained.

[Example 4]
5.3 parts by mass of YX-4000HK, 4.1 parts by mass of TAM-005, 1,8-diazabicyclo (5,4,0) undecene-7 [trade name, San Apro Co., Ltd.] as a curing accelerator for component (C) A resin composition for encapsulating a semiconductor was obtained in the same manner as in Example 1 except that 0.1 mass part and FB-875FC was 90 mass parts.

[Comparative Example 1]
6.1 parts by mass of YX-4000HK, MEH-7500 as a phenol resin instead of TAM-005 [trade name, phenol-aldehyde resin not modified by nitrogen, manufactured by Meiwa Kasei Co., Ltd., softening point: 107-113 ° C, ICI viscosity: 0.73 to 1.03 Pa · s / 150 ° C., hydroxyl group equivalent 97] A comparative resin composition for encapsulating a semiconductor was obtained in the same manner as in Example 1 except that the content was 3.1 parts by mass.

[Comparative Example 2]
A comparative resin composition for semiconductor encapsulation was obtained in the same manner as in Example 2 except that 6.1 parts by mass of YX-4000HK and 3.1 parts by mass of MEH-7500 were used.

[Comparative Example 3]
5.9 parts by mass of YX-4000HK, BRG-558 as a phenol resin instead of TAM-005 750 (polystyrene conversion)] A comparative resin composition for semiconductor encapsulation was obtained in the same manner as in Example 1 except that the content was 3.2 parts by mass.

[Comparative Example 4]
A resin composition for semiconductor encapsulation for comparison was prepared in the same manner as in Example 2 except that 5.9 parts by mass of YX-4000HK and 3.2 parts by mass of BRG-558 as a phenol resin instead of TAM-005 were used. Obtained.

[Comparative Example 5]
4.5 parts by weight of YX-4000HK, HE-200C-10 as a phenol resin instead of TAM-005 [trade name, polycondensate of non-nitrogen-modified phenol-p-xylene glycol dimethyl ether manufactured by Air Water Co., Ltd. , A hydroxyl group equivalent of 200] was used in the same manner as in Example 1 except that 4.7 parts by mass of a hydroxyl group equivalent of 200] was obtained.

[Comparative Example 6]
A comparative semiconductor sealing resin composition was obtained in the same manner as in Example 1 except that 13.7 parts by mass of YX-4000HK, 10.5 parts by mass of TAM-005, and 75 parts by mass of FB-875FC were used. It was.
Table 1 shows the evaluation results of the blended compositions, resin compositions, and cured products in Examples 1 to 4 and Comparative Examples 1 to 6.

The semiconductor sealing resin composition, the cured product, the comparative semiconductor sealing resin composition, and the physical properties of the cured product obtained in the above Examples and Comparative Examples were evaluated by the methods shown below. did.
Molding of the resin-encapsulated semiconductor device is performed by using a compression molding machine for each resin composition together with a semiconductor element under conditions of a mold temperature of 175 ° C., a molding pressure of 8.0 MPa, and a curing time of 150 seconds, and then 175 ° C. Was post-cured for 4 hours.

[Spiral flow]
The measurement was performed under the conditions of 175 ° C. and 150 seconds in accordance with EMMI-I-65.
[Geltime]
The gel time on a hot plate at 175 ° C. was measured.
[Melt viscosity]
Using a Shimadzu flow tester CFT-500 type (trade name, manufactured by Shimadzu Corporation), the melt viscosity at 175 ° C. and a load of 10 kg (under an environment of shear stress of 1.23 × 105 Pa) was measured.
[Formability]
FBGA (50 mm × 50 mm × 0.54 mm) was compression-molded at 175 ° C. for 2 minutes using the resin composition for semiconductor encapsulation, followed by observing the occurrence of “nest” on the surface of the molded product. Evaluation was based on criteria.
◯: No nests are generated Δ: Nests are slightly generated ×: Many nests are generated “-” in Comparative Example 6 means that molding is impossible.
[Glass-transition temperature]
A semiconductor sealing resin composition and a comparative semiconductor sealing resin composition were molded at 175 ° C. for 120 seconds, then post-cured at 175 ° C. for 4 hours, and a test piece was obtained from the resulting cured product. And measured by a thermomechanical analyzer (TMA). Further, a stick-like sample was prepared from a cured product that was thermoformed at 200 ° C. for 1 hour, and the glass transition temperature was measured by TMA at a temperature increase rate of 10 ° C./min.
[Linear expansion coefficient]
The measurement was performed simultaneously with the measurement of the glass transition temperature using TMA, and the linear expansion coefficient below the glass transition temperature was calculated.
[Bending elastic modulus]
It measured based on JIS-K-6911.
[Package warpage]
FBGA (50 mm × 50 mm × 0.54 mm) was compression molded at 175 ° C. for 2 minutes using the semiconductor sealing resin composition and the comparative semiconductor sealing resin composition, and then the warpage of the package was evaluated. .
As the evaluation method, the amount of warpage was measured using a warpage amount measuring device “Thermo Ray PS200” manufactured by Achromometrics.
[Wire flow rate]
After sealing, the wire was observed with an X-ray inspection apparatus (manufactured by Pony Industry Co., Ltd.), and the wire flow rate of the maximum deformed portion was measured.

The resin composition for encapsulating a semiconductor of the present invention can keep the melt viscosity low without increasing the linear expansion coefficient of the cured product, and thus has excellent moldability and extremely low wire flow rate due to the molten resin. This is useful for manufacturing a resin-encapsulated semiconductor device having good properties.

Claims (5)

(A) Biphenyl type epoxy resin, (B) Nitrogen-containing phenol resin, (C) Curing accelerator and (D) Spherical silica are essential components, and (B) Nitrogen-containing phenol resin is represented by the following general formula (1)

Here, R ¹ and R ² may be monovalent and divalent groups of the same skeleton, or may be monovalent and divalent groups of different skeletons. R ³ is selected from a hydrogen atom or an alkyl group and an alkoxy group, and may be the same or different from each other. n is an integer of 1 to 5]
The (D) spherical silica is contained in an amount of 80 mass% to 95 mass% based on the resin composition, and has a load of 10 kg (shear stress 1.23 × 10 ⁵ Pa). A semiconductor device formed by compression molding together with a semiconductor element using a resin composition for compression molding for semiconductor encapsulation having a melt viscosity of 4 to 13 Pa · s in the environment). The semiconductor device according to claim 1, wherein the (C) curing accelerator is an imidazole compound. The semiconductor device according to claim 1, wherein the linear expansion coefficient after curing is 40 ppm / ° C. or less, and the flexural modulus at 260 ° C. is 1.5 GPa or less. The semiconductor device according to claim 1, wherein the (D) spherical silica is contained in an amount of 85 mass% to 93 mass% based on the resin composition. In the above semiconductor device, a semiconductor device according to claim 1, the thickness of the resin composition layer after sealing is 0.2 to 1.5 mm.