JP5645718B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
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- JP5645718B2 JP5645718B2 JP2011049194A JP2011049194A JP5645718B2 JP 5645718 B2 JP5645718 B2 JP 5645718B2 JP 2011049194 A JP2011049194 A JP 2011049194A JP 2011049194 A JP2011049194 A JP 2011049194A JP 5645718 B2 JP5645718 B2 JP 5645718B2
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- 238000010438 heat treatment Methods 0.000 title claims description 108
- 239000000758 substrate Substances 0.000 claims description 34
- 238000012545 processing Methods 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 136
- 235000012431 wafers Nutrition 0.000 description 60
- 238000000034 method Methods 0.000 description 32
- 230000008569 process Effects 0.000 description 31
- 238000000354 decomposition reaction Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 18
- 239000012212 insulator Substances 0.000 description 18
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 16
- 239000002994 raw material Substances 0.000 description 15
- 239000012159 carrier gas Substances 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 229910052733 gallium Inorganic materials 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011491 glass wool Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
Description
なお、支持ロッド19が貫通可能な開口を蓋体12aに設け、この開口と支持ロッド19との間を磁性流体で密閉するとともに、回転機構により支持ロッド19を回転するようにしても良い。
第1の加熱部21は、金属製の筒状体23と、筒状体23の内面に沿って設けられる絶縁体24と、絶縁体24により支持される発熱体25(図3参照)とを有している。また、第1の加熱部21の上端には、加熱部20とアウターチューブ10との間の内部空間に供給される空気(後述)を排気するための上端排気口22Dが形成され、上端排気口22Dに接続される排気管(図示せず)を通して、加熱部20の内部空間からの空気が外部へ排気される。また、第1の加熱部21の筒状体23の側面には、発熱体25に電力を供給する複数の電流導入端子25aが設けられている。
図3及び図4に示すように、第1の加熱部21には、第1の加熱部21の下端から上端まで延び、アウターチューブ10のガイド管10a〜10dが通り抜けるのを許容するスリットが設けられている。具体的には、筒状体23の一部に、筒状体23の長手方向に沿って、筒状体23の下端から上端まで延びるスリット23Cが形成されており、これに対応して絶縁体24においても、絶縁体24の下端から上端まで延びるスリット24Cが形成されている。このため、第1の加熱部21は、ほぼC字状の平面形状を有している。また、第1の加熱部21の内面は、スリット(23C、24C)を除いて、アウターチューブ10の外周面に面している。
また、ガリウム原料槽31a〜31dには恒温槽32が設けられ、図示しない温度制御器によってガリウム原料槽31a〜31dひいては内部のTMGaの温度が所定の温度に維持され、TMGaの蒸気圧が温度に応じた値で一定に維持される。恒温槽32によりTMGa蒸気圧の一定に維持されるとともに、配管La〜Ldに設けられた圧力調整器PCa〜PCdにより配管La〜Ld内の圧力が一定に維持されることとにより、配管La〜Ldを流れるキャリアガス中のTMGa濃度を一定に維持することができる。
Claims (7)
- 複数の基板を多段に支持する支持体;
前記支持体を内部に収容可能な反応管であって、該反応管の側部に配置され前記反応管の内部にガスを供給する複数のガス供給管を有する当該反応管;
前記反応管の内部に収容された前記基板を加熱する第1の加熱部であって、該第1の加熱部の下端から上端まで延び、前記複数のガス供給管が通り抜けられるスリットを有し、該スリット以外においては内面が前記反応管の側部に面する第1の加熱部;及び
前記第1の加熱部の外側に配置され、前記複数のガス供給管が通り抜けられるスリットと該スリットの両側に設けられ連結部材が取り付け可能な取り付け部とを有する筐体;
を備える熱処理装置。 - 前記第1の加熱部の前記スリットの縁に沿って設けられる第2の加熱部を更に備える、請求項1に記載の熱処理装置。
- 前記反応管が、下部に開口を有する有蓋円筒形状を有し、
前記第1の加熱部が円筒形状を有し、
前記第1の加熱部は、前記スリットが前記反応管の側部に近接するように、前記反応管に対して偏心するように配置される、請求項1又は2に記載の熱処理装置。 - 前記スリットを通り抜ける前記複数のガス供給管と、前記スリットの縁との間の空間を埋める断熱材を更に備える、請求項1から3のいずれか一項に記載の熱処理装置。
- 前記複数のガス供給管が前記反応管の長手方向に沿って配列される、請求項1から4のいずれか一項に記載の熱処理装置。
- 前記第1の加熱部の上端に配置される第3の加熱部を更に備える、請求項1から5のいずれか一項に記載の熱処理装置。
- 前記複数のガス供給管の下方に形成された排気管を有し、
前記複数のガス供給管から供給されたガスは、前記排気管から排気される、
請求項1から6のいずれか一項に記載の熱処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011049194A JP5645718B2 (ja) | 2011-03-07 | 2011-03-07 | 熱処理装置 |
US13/409,426 US9039411B2 (en) | 2011-03-07 | 2012-03-01 | Thermal treatment apparatus |
TW101106709A TWI502630B (zh) | 2011-03-07 | 2012-03-01 | 熱處理裝置 |
KR20120022700A KR101489553B1 (ko) | 2011-03-07 | 2012-03-06 | 열처리 장치 |
CN201210058464.9A CN102677018B (zh) | 2011-03-07 | 2012-03-07 | 热处理装置 |
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JP2011049194A JP5645718B2 (ja) | 2011-03-07 | 2011-03-07 | 熱処理装置 |
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JP2012186367A JP2012186367A (ja) | 2012-09-27 |
JP5645718B2 true JP5645718B2 (ja) | 2014-12-24 |
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JP2011049194A Active JP5645718B2 (ja) | 2011-03-07 | 2011-03-07 | 熱処理装置 |
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US (1) | US9039411B2 (ja) |
JP (1) | JP5645718B2 (ja) |
KR (1) | KR101489553B1 (ja) |
CN (1) | CN102677018B (ja) |
TW (1) | TWI502630B (ja) |
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JP2012172871A (ja) * | 2011-02-18 | 2012-09-10 | Tokyo Electron Ltd | 熱処理装置および熱処理装置の温度測定方法 |
JP5702657B2 (ja) * | 2011-04-18 | 2015-04-15 | 東京エレクトロン株式会社 | 熱処理装置 |
US20170207078A1 (en) * | 2016-01-15 | 2017-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition apparatus and semiconductor process |
KR102043876B1 (ko) | 2016-02-09 | 2019-11-12 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
JP1565116S (ja) * | 2016-02-10 | 2016-12-12 | ||
CN106123575B (zh) * | 2016-08-09 | 2018-10-09 | 宿州市威菱耐火材料有限责任公司 | 一种转炉座砖的热处理装置及处理方法 |
CN106288793B (zh) * | 2016-08-09 | 2019-04-02 | 宿州市威菱耐火材料有限责任公司 | 一种耐高温出钢口的热处理装置及处理方法 |
CN106288792B (zh) * | 2016-08-09 | 2018-11-27 | 宿州市威菱耐火材料有限责任公司 | 一种新型钢包砖热处理装置及处理方法 |
CN106247792B (zh) * | 2016-08-09 | 2018-11-23 | 宿州市威菱耐火材料有限责任公司 | 一种出钢口的热处理装置及处理方法 |
CN106247795B (zh) * | 2016-08-09 | 2018-11-27 | 宿州市威菱耐火材料有限责任公司 | 一种耐高温钢包砖的热处理装置及处理方法 |
CN108570656B (zh) * | 2018-05-16 | 2020-02-18 | 深圳市硅光半导体科技有限公司 | 一种氮化硅膜的制作方法及氮化硅膜 |
JP7055075B2 (ja) * | 2018-07-20 | 2022-04-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
WO2021039270A1 (ja) * | 2019-08-30 | 2021-03-04 | 株式会社Kokusai Electric | 半導体装置の製造方法および製造装置 |
JP1706320S (ja) * | 2021-06-28 | 2022-01-31 | ||
CN114388654B (zh) * | 2021-12-13 | 2023-10-24 | 泰州隆基乐叶光伏科技有限公司 | 一种硅片加热装置及方法 |
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