JP5644160B2 - 半導体レーザ装置 - Google Patents
半導体レーザ装置 Download PDFInfo
- Publication number
- JP5644160B2 JP5644160B2 JP2010087925A JP2010087925A JP5644160B2 JP 5644160 B2 JP5644160 B2 JP 5644160B2 JP 2010087925 A JP2010087925 A JP 2010087925A JP 2010087925 A JP2010087925 A JP 2010087925A JP 5644160 B2 JP5644160 B2 JP 5644160B2
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- Prior art keywords
- semiconductor laser
- layer
- solder
- laser device
- submount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 64
- 229910000679 solder Inorganic materials 0.000 claims description 67
- 229920005989 resin Polymers 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 31
- 238000002844 melting Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 21
- 229910007637 SnAg Inorganic materials 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 15
- 239000003870 refractory metal Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 50
- 238000004519 manufacturing process Methods 0.000 description 31
- 238000000034 method Methods 0.000 description 10
- 238000000465 moulding Methods 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000003860 storage Methods 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
Landscapes
- Semiconductor Lasers (AREA)
- Die Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
図1は実施の形態1に係る半導体レーザ装置を示す平面図であり、図2はその断面図である。
実施の形態2では、実施の形態1と異なり、モールド樹脂2は熱可塑性樹脂である。半田4,6はSnAg半田である。フレーム1及びリード3の表面にメッキを形成した後に、プレスによりフレーム1にダウンセットを形成する。その他の構成は実施の形態1と同様である。
図11は、実施の形態3に係る半導体レーザ装置を拡大した断面図である。サブマウント5と半導体レーザチップ7との接合部以外の構成は実施の形態1と同様である。
図14は、実施の形態4に係る半導体レーザ装置を拡大した断面図である。サブマウント5以外の構成は実施の形態2と同様である。
Claims (3)
- フレームと、
前記フレームにモールド樹脂により固定されたリードと、
前記フレーム上に、第1の半田により接合されたサブマウントと、
前記サブマウント上に、第2の半田により接合された半導体レーザチップとを備え、
前記モールド樹脂の耐熱温度は、前記第1及び第2の半田の融点よりも高く、
前記第1及び第2の半田はSnAg半田であり、
前記サブマウントの表面に高融点金属層が形成され、
前記高融点金属層上に第1のPt層が形成され、
前記第1のPt層が前記第1及び第2の半田に接することを特徴とする半導体レーザ装置。 - 前記半導体レーザチップはAuメッキ層を有し、
前記半導体レーザチップの前記Auメッキ層と前記第2の半田との間に第2のPt層が設けられていることを特徴とする請求項1に記載の半導体レーザ装置。 - 前記第2のPt層の厚みは150nm以上、350nm以下であることを特徴とする請求項2に記載の半導体レーザ装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010087925A JP5644160B2 (ja) | 2010-04-06 | 2010-04-06 | 半導体レーザ装置 |
TW99147226A TWI438991B (zh) | 2010-04-06 | 2010-12-31 | Semiconductor laser device |
CN 201110083417 CN102214894B (zh) | 2010-04-06 | 2011-04-02 | 半导体激光器装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010087925A JP5644160B2 (ja) | 2010-04-06 | 2010-04-06 | 半導体レーザ装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011222627A JP2011222627A (ja) | 2011-11-04 |
JP2011222627A5 JP2011222627A5 (ja) | 2013-04-18 |
JP5644160B2 true JP5644160B2 (ja) | 2014-12-24 |
Family
ID=44746071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010087925A Active JP5644160B2 (ja) | 2010-04-06 | 2010-04-06 | 半導体レーザ装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5644160B2 (ja) |
CN (1) | CN102214894B (ja) |
TW (1) | TWI438991B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012102305A1 (de) * | 2012-03-19 | 2013-09-19 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
US8867582B2 (en) | 2012-04-04 | 2014-10-21 | Osram Opto Semiconductors Gmbh | Laser diode assembly |
WO2013141287A1 (ja) * | 2012-03-22 | 2013-09-26 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US9008138B2 (en) | 2012-04-12 | 2015-04-14 | Osram Opto Semiconductors Gmbh | Laser diode device |
DE102012103160A1 (de) | 2012-04-12 | 2013-10-17 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
JP2014209508A (ja) * | 2013-04-16 | 2014-11-06 | 住友電気工業株式会社 | はんだ付半導体デバイス、実装はんだ付半導体デバイス、はんだ付半導体デバイスの製造方法および実装方法 |
JP6572803B2 (ja) * | 2016-03-09 | 2019-09-11 | 三菱電機株式会社 | 半導体レーザ装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5559817A (en) * | 1994-11-23 | 1996-09-24 | Lucent Technologies Inc. | Complaint layer metallization |
JP3607220B2 (ja) * | 2001-06-06 | 2005-01-05 | 松下電器産業株式会社 | 半導体レーザ装置 |
JP3882712B2 (ja) * | 2002-08-09 | 2007-02-21 | 住友電気工業株式会社 | サブマウントおよび半導体装置 |
JP2004327982A (ja) * | 2003-04-11 | 2004-11-18 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2005190520A (ja) * | 2003-12-24 | 2005-07-14 | Sankyo Seiki Mfg Co Ltd | 光ヘッド装置 |
JP2005303169A (ja) * | 2004-04-15 | 2005-10-27 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2006024812A (ja) * | 2004-07-09 | 2006-01-26 | Sony Corp | 半導体素子搭載のリードフレームとそれを用いた半導体装置 |
JP4513513B2 (ja) * | 2004-11-09 | 2010-07-28 | 株式会社村田製作所 | 電子部品の製造方法 |
JP2006319109A (ja) * | 2005-05-12 | 2006-11-24 | Matsushita Electric Ind Co Ltd | 半導体装置用リードフレームおよびそれを用いた半導体装置用パッケージとその製造方法 |
JP5095091B2 (ja) * | 2005-06-08 | 2012-12-12 | シャープ株式会社 | レーザ装置の製造方法 |
JP4740030B2 (ja) * | 2005-06-08 | 2011-08-03 | シャープ株式会社 | レーザ装置の製造方法 |
CN100592585C (zh) * | 2006-03-28 | 2010-02-24 | 三菱电机株式会社 | 光学元件用组件及使用该组件的光学半导体器件 |
-
2010
- 2010-04-06 JP JP2010087925A patent/JP5644160B2/ja active Active
- 2010-12-31 TW TW99147226A patent/TWI438991B/zh not_active IP Right Cessation
-
2011
- 2011-04-02 CN CN 201110083417 patent/CN102214894B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2011222627A (ja) | 2011-11-04 |
TWI438991B (zh) | 2014-05-21 |
CN102214894A (zh) | 2011-10-12 |
CN102214894B (zh) | 2013-07-24 |
TW201140971A (en) | 2011-11-16 |
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