[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP5590711B2 - Light emitting element mounting method and light emitting element mounting structure - Google Patents

Light emitting element mounting method and light emitting element mounting structure Download PDF

Info

Publication number
JP5590711B2
JP5590711B2 JP2010112692A JP2010112692A JP5590711B2 JP 5590711 B2 JP5590711 B2 JP 5590711B2 JP 2010112692 A JP2010112692 A JP 2010112692A JP 2010112692 A JP2010112692 A JP 2010112692A JP 5590711 B2 JP5590711 B2 JP 5590711B2
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
electrode
ink
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010112692A
Other languages
Japanese (ja)
Other versions
JP2011243666A (en
Inventor
謙磁 塚田
和裕 杉山
公彦 安田
誠吾 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Corp
Original Assignee
Fuji Machine Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Machine Manufacturing Co Ltd filed Critical Fuji Machine Manufacturing Co Ltd
Priority to JP2010112692A priority Critical patent/JP5590711B2/en
Publication of JP2011243666A publication Critical patent/JP2011243666A/en
Application granted granted Critical
Publication of JP5590711B2 publication Critical patent/JP5590711B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73267Layer and HDI connectors

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

本発明は、発光素子の実装方法を改善した発光素子実装方法及び発光素子実装構造に関する発明である。   The present invention relates to a light emitting element mounting method and a light emitting element mounting structure, which are improved light emitting element mounting methods.

従来より、発光素子の代表的なものとしてLED(発光ダイオード)が知られているが、LEDを搭載部材(配線基板、リード等)に実装する場合、特許文献1(特開平9−298313号公報)に記載されているように、LEDを実装する搭載部材(配線基板、リード等)とLEDの電極との間をワイヤボンディングで配線するのが一般的である。   Conventionally, an LED (light emitting diode) is known as a typical light emitting element. However, when an LED is mounted on a mounting member (wiring board, lead, etc.), Patent Document 1 (Japanese Patent Laid-Open No. 9-298313). In general, wiring is performed between a mounting member (wiring board, lead, etc.) on which an LED is mounted and an electrode of the LED by wire bonding.

また、特許文献2(特開平7−288340号公報)では、LEDの発光効率の向上等を目的として、LEDの少なくとも一方の電極を直線状に形成し且つ該電極の中央部にワイヤボンディング用の円形のパッド部を形成した構成となっている。   Further, in Patent Document 2 (Japanese Patent Laid-Open No. 7-288340), for the purpose of improving the luminous efficiency of the LED, at least one electrode of the LED is formed in a straight line and is used for wire bonding at the center of the electrode. A circular pad portion is formed.

特開平9−298313号公報JP-A-9-298313 特開平7−288340号公報JP-A-7-288340

上記特許文献1,2のものは、いずれも、LEDを実装する搭載部材とLEDの電極との間をワイヤボンディングで配線する構成となっているが、ワイヤボンディングでは、熱圧着と超音波によってワイヤを接合するため、それらの衝撃によってLEDや搭載部材が破損したり、或は、耐衝撃性を確保するためにLEDや搭載部材を厚くして機械的強度を強化する必要があった。また、ワイヤボンディング後にLEDを樹脂で封止する際にワイヤが引っ張られて破損する可能性があった。しかも、LEDの電極に接続したワイヤの一部がLEDの上方に突出するため、LEDパッケージの高さ寸法が大きくなってしまい、LEDパッケージの低背化に限界があった。   Each of the above-mentioned Patent Documents 1 and 2 has a configuration in which a mounting member for mounting an LED and an electrode of the LED are wired by wire bonding. In wire bonding, the wire is bonded by thermocompression bonding and ultrasonic waves. Therefore, it is necessary to increase the mechanical strength by increasing the thickness of the LED and the mounting member in order to ensure impact resistance. In addition, when the LED is sealed with resin after wire bonding, the wire may be pulled and damaged. In addition, since a part of the wire connected to the electrode of the LED protrudes above the LED, the height dimension of the LED package becomes large, and there is a limit to the reduction in the height of the LED package.

また、従来のLEDは、発光素子の光放射領域がワイヤボンディング用の円形の電極の遮光によって狭められてしまい、LEDの発光効率が低下するという欠点もあった。   Further, the conventional LED has a drawback that the light emission region of the light emitting element is narrowed by the light shielding of the circular electrode for wire bonding, and the light emission efficiency of the LED is lowered.

そこで、本発明が解決しようとする課題は、発光素子の電極と搭載部材との間を接続する際に発光素子や搭載部材が破損することを防止できると共に、低背化の要求を満たし、且つ、発光素子の発光効率を向上できる発光素子実装方法及び発光素子実装構造を提供することである。   Therefore, the problem to be solved by the present invention is to prevent the light emitting element and the mounting member from being damaged when connecting between the electrode of the light emitting element and the mounting member, and to satisfy the demand for low profile, and Another object is to provide a light emitting element mounting method and a light emitting element mounting structure capable of improving the light emission efficiency of the light emitting element.

上記課題を解決するために、請求項1に係る発明は、発光素子を搭載部材に実装する発光素子実装方法において、前記発光素子を前記搭載部材に接着する素子接着工程と、電極材料の微粒子を含有するインクをインクジェットで前記発光素子の表面のうちの光放射領域の少なくとも一方の側縁に沿って線状に印刷して少なくとも一方の電極を線状に形成する電極形成工程と、前記発光素子の電極と前記搭載部材との間の配線下地部を絶縁材料で斜面状に形成する工程と、前記発光素子の電極と前記搭載部材とを接続する配線パターンをインクジェットで前記配線下地部上に印刷して形成する配線パターン形成工程とを含み、前記電極形成工程よりも前の工程で、前記発光素子の表面のうちインクジェットで前記電極を印刷する部分以外の部分に、インクジェットのインクが付着しないように撥液性の表面処理を施すことを特徴とするものである。 In order to solve the above-mentioned problem, an invention according to claim 1 is a light emitting element mounting method for mounting a light emitting element on a mounting member, and includes an element bonding step of bonding the light emitting element to the mounting member, and fine particles of an electrode material. An electrode forming step in which at least one electrode is linearly printed by ink-jet printing along at least one side edge of a light emitting region of the surface of the light emitting element by inkjet ; and the light emitting element Forming a wiring base portion between the electrode and the mounting member in an inclined shape with an insulating material, and printing a wiring pattern connecting the electrode of the light emitting element and the mounting member on the wiring base portion by inkjet in was observed including a wiring pattern forming step of forming, before the said electrode forming step process, portions other than the portion to print the electrode by an ink-jet of the surface of the light emitting element And it is characterized in that the surface treatment of the liquid repellency as inkjet ink does not adhere.

本発明では、発光素子の電極と搭載部材との間を、インクジェットで印刷した配線パターンで接続するため、ワイヤボンディングが不要となり、ワイヤボンディング時の衝撃による発光素子や搭載部材の破損を防止できると共に、低背化の要求を満たすことができる。しかも、発光素子の少なくとも一方の電極を該発光素子の光放射領域の側縁に沿って線状に形成し、且つ、該電極からワイヤボンディング用の円形のパッド部を無くすことができるため、発光素子の光放射領域の面積を拡大でき(従来はワイヤボンディング用の円形のパッド部で光放射領域の面積が狭められていた)、更に、線状の電極によって発光素子のpn接合部に流れる電流の拡散性を向上させることができ、上述した光放射領域の面積拡大効果と相俟って、発光素子の発光効率を向上できる利点もある。   In the present invention, the electrode of the light emitting element and the mounting member are connected by a wiring pattern printed by inkjet, so that wire bonding is not necessary, and damage to the light emitting element and the mounting member due to an impact during wire bonding can be prevented. Can meet the demands of low profile. In addition, since at least one electrode of the light emitting element is formed linearly along the side edge of the light emitting region of the light emitting element, and the circular pad portion for wire bonding can be eliminated from the electrode, light emission The area of the light emitting region of the element can be enlarged (in the past, the area of the light emitting region was narrowed by a circular pad portion for wire bonding), and the current flowing to the pn junction of the light emitting element by the linear electrode The diffusibility of the light emitting element can be improved, and combined with the above-described area expansion effect of the light emitting region, there is an advantage that the light emission efficiency of the light emitting element can be improved.

本発明は、発光素子に形成する片方の電極を、金属の蒸着、メッキ、スパッタ、イオンプレーティング、スクリーン印刷等によって形成しても良いが、求項のように、電極形成工程で、電極材料の微粒子を含有するインクをインクジェットで線状に印刷して少なくとも一方の電極を線状に形成するようにすれば、インクジェットによって少なくとも一方の線状の電極を簡単に形成することができる。
ところで、発光素子の構造によっては、発光素子の電極と搭載部材とを接続する配線パターンを発光素子の側面にインクジェットで直接印刷すると、配線パターンが発光素子とショートしたり、配線パターンの密着力が弱くなる可能性がある。しかも、発光素子の側面にインクジェットで配線パターンを印刷するには、インクジェットのインク噴射方向と発光素子の側面とが平行とならないようにどちらかを傾斜させる必要があり、面倒である。
そこで、請求項1に係る発明では、配線パターン形成工程よりも前の工程で、発光素子の側面のうちの配線パターンを形成する領域を絶縁材料で斜面状に形成するようにしている。このようにすれば、インクジェットのインク噴射方向(又は発光素子)を傾斜させなくても、発光素子の側部に配線パターンをインクジェットで印刷できると共に、絶縁材料としてインクの密着力が強い材料を用いることで、配線パターンの密着力を強化しながら、配線パターンと発光素子とのショートも防止できる。
しかも、請求項1に係る発明では、電極形成工程よりも前の工程で、発光素子の表面のうちインクジェットで電極を印刷する部分以外の部分にインクジェットのインクが付着しないように撥液性の表面処理を施すようにしているため、発光素子の表面のうち、インクジェットで電極を印刷する部分以外の部分に、インクジェットのインクが付着することを防止できる。
The present invention, the one electrode forming the light emitting element, the metal deposition, plating, sputtering, ion plating, may be formed by screen printing or the like, but as the Motomeko 1, the electrode forming step, ink can be a simply formed at least one of linear electrodes at least one of the electrodes by printing a line shape in the inkjet to lever so as to form a line shape, the ink jet containing fine particles of the electrode material .
By the way, depending on the structure of the light emitting element, when the wiring pattern for connecting the electrode of the light emitting element and the mounting member is directly printed on the side surface of the light emitting element by inkjet, the wiring pattern may be short-circuited with the light emitting element, May be weak. Moreover, in order to print a wiring pattern on the side surface of the light emitting element by inkjet, it is necessary to incline either one of the ink jet direction of the inkjet and the side surface of the light emitting element, which is troublesome.
Therefore, in the invention according to claim 1, in the step prior to the wiring pattern forming step, the region of the side surface of the light emitting element where the wiring pattern is to be formed is formed in an inclined shape with an insulating material. In this way, a wiring pattern can be printed on the side of the light emitting element by ink jet without tilting the ink jet direction (or light emitting element) of the ink jet, and a material having strong ink adhesion is used as an insulating material. Thus, it is possible to prevent a short circuit between the wiring pattern and the light emitting element while enhancing the adhesion of the wiring pattern.
In addition, in the invention according to claim 1, the liquid repellent surface prevents the ink jet ink from adhering to a portion of the surface of the light emitting element other than the portion where the electrode is printed by the ink jet in the step before the electrode forming step. Since the treatment is performed, it is possible to prevent the inkjet ink from adhering to a portion of the surface of the light emitting element other than the portion where the electrode is printed by inkjet.

この際、請求項3のように、透明な電極材料の微粒子を含有するインクを用いると良い。透明な電極材料を用いれば、発光素子の光放射領域の面積を一層拡大できる。   At this time, it is preferable to use an ink containing fine particles of a transparent electrode material as in claim 3. If a transparent electrode material is used, the area of the light emitting region of the light emitting element can be further expanded.

更に、請求項4のように、電極形成工程で、電極を発光素子の光放射領域を取り囲むように形成しても良い。このようにすれば、発光素子のpn接合部に流れる電流の拡散性を一層向上させることができ、発光素子を効率良く発光させることができる。   Further, as in claim 4, in the electrode forming step, the electrode may be formed so as to surround the light emitting region of the light emitting element. In this way, the diffusibility of the current flowing through the pn junction of the light emitting element can be further improved, and the light emitting element can emit light efficiently.

尚、請求項に係る発明は、前記請求項1に係る発明の技術思想を「発光素子実装構造」として表現したものである。 The invention according to claim 5 expresses the technical idea of the invention according to claim 1 as “light emitting element mounting structure”.

図1(a)は本発明の実施例1のLED実装構造を模式的に示す平面図、同図(b)は同縦断面図である。Fig.1 (a) is a top view which shows typically the LED mounting structure of Example 1 of this invention, The same figure (b) is the longitudinal cross-sectional view. 図2(a)は実施例1のLEDを模式的に示す平面図、同図(b)は同縦断面図である。Fig.2 (a) is a top view which shows typically LED of Example 1, (b) is the longitudinal cross-sectional view. 図3は実施例1のLED実装方法を説明する工程図である。FIG. 3 is a process diagram illustrating the LED mounting method according to the first embodiment. 図4(a)は実施例2のLEDを模式的に示す平面図、同図(b)は同縦断面図である。4A is a plan view schematically showing the LED of Example 2, and FIG. 4B is a longitudinal sectional view thereof.

以下、本発明を実施するための形態を具体化した2つの実施例1,2を説明する。   Hereinafter, two Examples 1 and 2 which embody the form for implementing this invention are demonstrated.

本発明の実施例1を図1乃至図3に基づいて説明する。
まず、図2に基づいてLED素子11(発光素子)の構成を説明する。
LED素子11は、サファイア基板等の絶縁性基板12上にn型半導体層13とp型半導体層14が積層されるように形成され、下側のn型半導体層13の一方側の端部が露出されてその上面にn側電極15が形成され、上側のp型半導体層14の他方側の端部上面にp側電極16が形成されている。
A first embodiment of the present invention will be described with reference to FIGS.
First, the structure of the LED element 11 (light emitting element) is demonstrated based on FIG.
The LED element 11 is formed such that an n-type semiconductor layer 13 and a p-type semiconductor layer 14 are laminated on an insulating substrate 12 such as a sapphire substrate, and an end portion on one side of the lower n-type semiconductor layer 13 is formed. An n-side electrode 15 is formed on the upper surface of the exposed p-type semiconductor layer 14 so as to be exposed, and a p-side electrode 16 is formed on the upper surface of the other end of the upper p-type semiconductor layer 14.

本実施例1では、n側電極15とp側電極16は、LED素子11の光放射領域の側縁に沿って直線状に形成されている。n側電極15は、例えばAu、Au合金、Ag、Ag合金等の導体を用いて、蒸着、メッキ、スパッタ、イオンプレーティング、スクリーン印刷等によって形成されている。尚、n側電極15は従来と同様の円形状に形成しても良い。   In the first embodiment, the n-side electrode 15 and the p-side electrode 16 are formed linearly along the side edge of the light emitting region of the LED element 11. The n-side electrode 15 is formed by vapor deposition, plating, sputtering, ion plating, screen printing or the like using a conductor such as Au, Au alloy, Ag, or Ag alloy. Note that the n-side electrode 15 may be formed in a circular shape similar to the conventional one.

実施例1では、p側電極16は、透明な電極材料であるITOの微粒子(ナノサイズの粒子)を含有するITOナノ粒子インクをインクジェットで線状に印刷して形成している。透明な電極材料としては、ITOの他に、ZnO(酸化亜鉛)、SnO(酸化スズ)、CNT(カーボンナノチューブ)等のいずれかを用いても良い。 In the first embodiment, the p-side electrode 16 is formed by printing ITO nanoparticle ink containing ITO fine particles (nano-sized particles), which is a transparent electrode material, in a linear manner by inkjet. As the transparent electrode material, in addition to ITO, any of ZnO (zinc oxide), SnO (tin oxide), CNT (carbon nanotube), and the like may be used.

或は、p側電極16は、Auナノ粒子等を含有する金属ナノ粒子インクをインクジェットで線状に印刷して形成しても良い。尚、n側電極15も、Auナノ粒子等を含有する金属ナノ粒子インクをインクジェットで線状に印刷して形成しても良い。   Alternatively, the p-side electrode 16 may be formed by printing a metal nanoparticle ink containing Au nanoparticles or the like in a linear manner by inkjet. Note that the n-side electrode 15 may also be formed by printing a metal nanoparticle ink containing Au nanoparticles or the like in a linear manner by inkjet.

LED素子11の表面のうち、両側の電極15,16以外の部分は、インクジェットのインクが付着しないように撥液性の表面処理17が施されている。両側の電極15,16の表面は、インクジェットのインクが付着しやすいように親液性の表面処理を施しても良い。   A portion of the surface of the LED element 11 other than the electrodes 15 and 16 on both sides is subjected to a liquid repellent surface treatment 17 so that ink jet ink does not adhere. The surfaces of the electrodes 15 and 16 on both sides may be subjected to lyophilic surface treatment so that ink jet ink can easily adhere to the surfaces.

次に、図1に基づいて上記構成のLED素子11を配線基板20(搭載部材)に実装するLED素子実装構造を説明する。配線基板20の素子搭載部には、接着剤(例えばAgペースト等)によりLED素子11が接着されている。配線基板20の実装面には、LED素子11の搭載部の両側にランド21,22がプリント配線方法等により形成されている。LED素子11の両側の電極15,16と配線基板20のランド21,22との間には、絶縁性樹脂(例えばエポキシ樹脂、ウレタン樹脂等)を用いてディスペンサ、インクジェット等により両側の電極15,16の側縁からランド21,22近傍に向けて下り傾斜する斜面部23,24(配線下地部)が形成されている。斜面部23,24を形成する絶縁性樹脂は、インクの密着力が強い樹脂を用いると良い。尚、斜面部23,24の表面は、インクジェットのインクが付着しやすいように親液性の表面処理を施しても良い。 Next, an LED element mounting structure for mounting the LED element 11 having the above configuration on the wiring board 20 (mounting member) will be described with reference to FIG. The LED element 11 is bonded to the element mounting portion of the wiring board 20 with an adhesive (for example, Ag paste). On the mounting surface of the wiring board 20, lands 21 and 22 are formed on both sides of the mounting portion of the LED element 11 by a printed wiring method or the like. Between the electrodes 15 and 16 on both sides of the LED element 11 and the lands 21 and 22 of the wiring board 20, an insulating resin (for example, epoxy resin, urethane resin or the like) is used to dispense both electrodes 15, Slope portions 23 and 24 (wiring base portions) are formed so as to be inclined downward from the side edges of 16 toward the lands 21 and 22. As the insulating resin forming the slope portions 23 and 24, a resin having a strong ink adhesion may be used. It should be noted that the surfaces of the slope portions 23 and 24 may be subjected to lyophilic surface treatment so that ink jet ink can easily adhere thereto.

LED素子11の両側の電極15,16と配線基板20のランド21,22との間を接続する配線パターン25,26が、Agナノ粒子インク等の金属ナノ粒子インクをインクジェットで斜面部23,24の表面に印刷して形成されている。   The wiring patterns 25 and 26 connecting the electrodes 15 and 16 on both sides of the LED element 11 and the lands 21 and 22 of the wiring substrate 20 are formed by using the metal nanoparticle ink such as Ag nanoparticle ink by the inkjet. It is formed by printing on the surface.

この場合、LED素子11の発光層からの光が上からだけではなく、絶縁性基板12に反射して半導体層からも出光するため、n側電極15及び/又は配線パターン25,26を、上述した透明な電極材料によって形成しても良い。また、斜面部23,24を形成する絶縁性樹脂も、透明で屈折率の高い樹脂を用いると良く、更に、その樹脂の屈折率は、LED素子11を封止するモールド樹脂の屈折率と同等かそれ以上の屈折率の樹脂を用いることが望ましい。   In this case, since the light from the light emitting layer of the LED element 11 is reflected not only from above but also from the semiconductor layer after being reflected from the insulating substrate 12, the n-side electrode 15 and / or the wiring patterns 25 and 26 are formed as described above. The transparent electrode material may be formed. The insulating resin forming the slope portions 23 and 24 may be a transparent resin having a high refractive index, and the refractive index of the resin is equivalent to the refractive index of the mold resin that seals the LED element 11. It is desirable to use a resin having a refractive index higher than that.

次に、図3を用いて、LED素子11を配線基板20に実装する各工程を説明する。
まず、工程(1)で、配線基板20の素子搭載部に接着剤(例えばAgペースト等)をディスペンサ等により塗布する。次の工程(2)で、LED素子11を配線基板20の素子搭載部に搭載して接着する。
Next, each process of mounting the LED element 11 on the wiring board 20 will be described with reference to FIG.
First, in step (1), an adhesive (for example, Ag paste) is applied to the element mounting portion of the wiring board 20 by a dispenser or the like. In the next step (2), the LED element 11 is mounted on the element mounting portion of the wiring board 20 and bonded.

次の工程(3)で、LED素子11の両側の電極15,16と配線基板20のランド21,22との間に、絶縁性樹脂(例えばエポキシ樹脂、ウレタン樹脂等)を用いてディスペンサ、インクジェット等により両側の電極15,16の側縁からランド21,22近傍に向けて下り傾斜する斜面部23,24を形成する。   In the next step (3), an insulating resin (for example, epoxy resin, urethane resin or the like) is used between the electrodes 15 and 16 on both sides of the LED element 11 and the lands 21 and 22 of the wiring board 20 to dispense the ink jet. The slope portions 23 and 24 are formed so as to incline downward from the side edges of the electrodes 15 and 16 on both sides toward the lands 21 and 22.

斜面部23,24の硬化後、工程(4)に進み、LED素子11の光放射領域の側縁に沿ってITOナノ粒子インク又はAuナノ粒子インク等の金属ナノ粒子インクをインクジェットで直線状に印刷してp側電極16を形成する。n側電極15は、予め形成しておいても良いし、Auナノ粒子インク等の金属ナノ粒子インクをインクジェットで印刷して形成しても良い。   After the slope portions 23 and 24 are cured, the process proceeds to step (4), and the metal nanoparticle ink such as ITO nanoparticle ink or Au nanoparticle ink is linearly formed by inkjet along the side edge of the light emitting region of the LED element 11. The p-side electrode 16 is formed by printing. The n-side electrode 15 may be formed in advance, or may be formed by printing metal nanoparticle ink such as Au nanoparticle ink by inkjet.

尚、予め、LED素子11の表面のうち、p側電極16(n側電極15)を印刷する部分以外の部分に、インクジェットのインクが付着しないように撥液性の表面処理17を施しておいても良いし、p側電極16(n側電極15)をインクジェットで印刷する電極形成工程の前工程で、p側電極16(n側電極15)を印刷する部分以外の部分に、撥液性の表面処理17を施すようにしても良い。この際、撥液性の表面処理17のパターニングは、例えば、感光性の撥液樹脂材料をLED素子11の表面にスピンコートで成膜し、不要部分をUV光で除去することで、LED素子11の表面に撥液性の表面処理17のパターンを形成すれば良い。   In addition, a liquid-repellent surface treatment 17 is applied in advance to the portion of the surface of the LED element 11 other than the portion where the p-side electrode 16 (n-side electrode 15) is printed. In addition, the liquid repellent property may be applied to a portion other than the portion where the p-side electrode 16 (n-side electrode 15) is printed in the pre-process of the electrode forming step for printing the p-side electrode 16 (n-side electrode 15) by inkjet. The surface treatment 17 may be applied. At this time, the patterning of the liquid repellent surface treatment 17 is performed by, for example, forming a photosensitive liquid repellent resin material on the surface of the LED element 11 by spin coating, and removing unnecessary portions with UV light. The pattern of the liquid-repellent surface treatment 17 may be formed on the surface 11.

p側電極16(n側電極15)のインク乾燥後に工程(5)に進み、LED素子11の両側の電極15,16と配線基板20のランド21,22との間を接続する配線パターン25,26を、Agナノ粒子インク等の金属ナノ粒子インクをインクジェットで斜面部23,24の表面に印刷して形成する。   After drying the ink on the p-side electrode 16 (n-side electrode 15), the process proceeds to step (5), and wiring patterns 25, which connect between the electrodes 15 and 16 on both sides of the LED element 11 and the lands 21 and 22 of the wiring board 20, 26 is formed by printing metal nanoparticle ink such as Ag nanoparticle ink on the surfaces of the slope portions 23 and 24 by inkjet.

配線パターン25,26のインク乾燥後に工程(6)に進み、LED素子11を搭載した配線基板20を焼成炉に搬入して、インクジェットで印刷したp側電極16(n側電極15)と配線パターン25,26を例えば150〜350℃で焼成する。これにより、LED素子11の実装工程が終了する。   After the ink of the wiring patterns 25 and 26 is dried, the process proceeds to step (6), the wiring board 20 on which the LED elements 11 are mounted is carried into a baking furnace, and the p-side electrode 16 (n-side electrode 15) and the wiring pattern printed by inkjet. For example, 25 and 26 are fired at 150 to 350 ° C. Thereby, the mounting process of the LED element 11 is completed.

以上説明した本実施例1によれば、LED素子11の両側の電極15,16と配線基板20のランド21,22との間を、インクジェットで印刷した配線パターン25,26で接続するため、ワイヤボンディングが不要となり、ワイヤボンディング時の衝撃によるLED素子11や配線基板20の破損を防止できると共に、低背化の要求を満たすことができる。しかも、LED素子11の少なくともp側電極16を該LED素子11の光放射領域の側縁に沿って線状に形成し、且つ、該p側電極16からワイヤボンディング用の円形のパッド部を無くすことができるため、LED素子11の光放射領域の面積を拡大でき(従来はワイヤボンディング用の円形のパッド部で光放射領域の面積が狭められていた)、更に、線状のp側電極16によってLED素子11のpn接合部に流れる電流の拡散性を向上させることができ、上述した光放射領域の面積拡大効果と相俟って、LED素子11の輝度を向上できる利点もある。   According to the first embodiment described above, the electrodes 15 and 16 on both sides of the LED element 11 and the lands 21 and 22 of the wiring board 20 are connected by the wiring patterns 25 and 26 printed by ink jet. Bonding becomes unnecessary, and it is possible to prevent the LED element 11 and the wiring board 20 from being damaged due to an impact during wire bonding, and to satisfy the demand for a low profile. Moreover, at least the p-side electrode 16 of the LED element 11 is linearly formed along the side edge of the light emitting region of the LED element 11, and the circular pad portion for wire bonding is eliminated from the p-side electrode 16. Therefore, the area of the light emitting region of the LED element 11 can be enlarged (in the past, the area of the light emitting region was narrowed by a circular pad portion for wire bonding), and the linear p-side electrode 16 Thus, the diffusibility of the current flowing in the pn junction of the LED element 11 can be improved, and there is an advantage that the brightness of the LED element 11 can be improved in combination with the above-described area expansion effect of the light emitting region.

実施例1のように、ITOナノ粒子インク、Auナノ粒子インク等の金属ナノ粒子インクをインクジェットで線状に印刷してp側電極16を形成するようにすれば、インクジェットによって線状のp側電極16を簡単に形成することができる。しかも、透明な電極材料であるITOナノ粒子インクを用いてp側電極16を印刷すれば、LED素子11の光放射領域の面積を一層拡大できる。 If the metal nanoparticle ink such as ITO nanoparticle ink or Au nanoparticle ink is linearly printed by inkjet to form the p-side electrode 16 as in the first embodiment, the linear p is formed by inkjet. The side electrode 16 can be easily formed. Moreover, if the p-side electrode 16 is printed using ITO nanoparticle ink which is a transparent electrode material, the area of the light emitting region of the LED element 11 can be further expanded.

ED素子の構造によっては、LED素子の側面にインクジェットで配線パターンを直接印刷すると、配線パターンがLED素子とショートしたり、配線パターンの密着力が弱くなる可能性がある。しかも、LED素子の側面にインクジェットで配線パターンを印刷するには、インクジェットのインク噴射方向とLED素子の側面とが平行とならないようにどちらかを傾斜させる必要があり、面倒である。 Depending on the structure of L ED elements, printing a wiring pattern directly in the ink jet to the side surface of the LED element, or the wiring pattern is short and LED elements, adhesion of the wiring patterns may become weaker. Moreover, in order to print the wiring pattern on the side surface of the LED element by inkjet, it is necessary to incline either one of the ink jet direction of the inkjet and the side surface of the LED element, which is troublesome.

そこで、本実施例1では、配線パターン形成工程(5)の前工程で、LED素子11の側面のうちの配線パターン25,26を形成する領域を絶縁性樹脂で斜面状に形成するようにしている。このようにすれば、インクジェットのインク噴射方向(又はLED素子11)を傾斜させなくても、LED素子11の側部に配線パターン25,26をインクジェットで印刷できると共に、絶縁性樹脂としてインクの密着力が強い樹脂を用いることで、配線パターン25,26の密着力を強化しながら、配線パターン25,26とLED素子11とのショートも防止できる。   Therefore, in the first embodiment, in the previous step of the wiring pattern forming step (5), the region for forming the wiring patterns 25 and 26 on the side surface of the LED element 11 is formed in an inclined shape with an insulating resin. Yes. In this way, the wiring patterns 25 and 26 can be printed on the side of the LED element 11 by ink jet without tilting the ink jet direction (or LED element 11) of the ink jet, and the ink adheres as an insulating resin. By using a strong resin, it is possible to prevent a short circuit between the wiring patterns 25 and 26 and the LED element 11 while strengthening the adhesion between the wiring patterns 25 and 26.

図4に示す本発明の実施例2では、電極形成工程で、p側電極16にLED素子11の光放射領域を取り囲む包囲部16aを一体に形成するようにしている。p側電極16と包囲部16aの形成方法は、ITOナノ粒子インク、Auナノ粒子インク等の金属ナノ粒子インクをインクジェットで印刷して形成しても良いし、金属の蒸着、メッキ、スパッタ、イオンプレーティング、スクリーン印刷等によって形成しても良い。その他の事項は上記実施例1と同じである。   In Example 2 of the present invention shown in FIG. 4, the surrounding portion 16 a surrounding the light emitting region of the LED element 11 is integrally formed on the p-side electrode 16 in the electrode forming step. As a method of forming the p-side electrode 16 and the surrounding portion 16a, metal nanoparticle ink such as ITO nanoparticle ink and Au nanoparticle ink may be printed by inkjet, or metal deposition, plating, sputtering, ion You may form by plating, screen printing, etc. Other matters are the same as those in the first embodiment.

本実施例2のように、p側電極16にLED素子11の光放射領域を取り囲む包囲部16aを一体に形成するようにすれば、LED素子11のpn接合部に流れる電流の拡散性を一層向上させることができ、LED素子11を効率良く発光させることができる。
尚、LED素子11を搭載する搭載部材は、配線基板に限定されず、リード等であっても良い。
If the surrounding part 16a surrounding the light emission region of the LED element 11 is formed integrally with the p-side electrode 16 as in the second embodiment, the diffusibility of the current flowing through the pn junction part of the LED element 11 is further increased. The LED element 11 can emit light efficiently.
The mounting member on which the LED element 11 is mounted is not limited to the wiring board, but may be a lead or the like.

11…LED素子(発光素子)、13…n型半導体層、14…p型半導体層、15…n側電極、16…p側電極、16a…包囲部、20…配線基板(搭載部材)、21,22…ランド、23,24…斜面部(配線下地部)、25,26…配線パターン
DESCRIPTION OF SYMBOLS 11 ... LED element (light emitting element), 13 ... n-type semiconductor layer, 14 ... p-type semiconductor layer, 15 ... n-side electrode, 16 ... p-side electrode, 16a ... enclosure part, 20 ... wiring board (mounting member), 21 , 22 ... Land, 23, 24 ... Slope (wiring base) , 25, 26 ... Wiring pattern

Claims (5)

発光素子を搭載部材に実装する発光素子実装方法において、
前記発光素子を前記搭載部材に接着する素子接着工程と、
電極材料の微粒子を含有するインクをインクジェットで前記発光素子の表面のうちの光放射領域の少なくとも一方の側縁に沿って線状に印刷して少なくとも一方の電極を線状に形成する電極形成工程と、
前記発光素子の電極と前記搭載部材との間の配線下地部を絶縁材料で斜面状に形成する工程と、
前記発光素子の電極と前記搭載部材との間を接続する配線パターンを前記配線下地部上にインクジェットで印刷して形成する配線パターン形成工程と
を含み、
前記電極形成工程よりも前の工程で、前記発光素子の表面のうちインクジェットで前記電極を印刷する部分以外の部分に、インクジェットのインクが付着しないように撥液性の表面処理を施すことを特徴とする発光素子実装方法。
In the light emitting element mounting method of mounting the light emitting element on the mounting member,
An element bonding step of bonding the light emitting element to the mounting member;
Electrode forming step in which ink containing fine particles of electrode material is printed by ink jet along at least one side edge of the light emitting region of the surface of the light emitting element to form at least one electrode in a linear shape When,
Forming a wiring base portion between the electrode of the light emitting element and the mounting member in an inclined shape with an insulating material;
Look including a wiring pattern forming step of forming a wiring pattern for connecting the electrode and the mounting member of the light emitting element by printing with an ink jet on the wiring substrate portion,
In a step prior to the electrode forming step, a liquid repellent surface treatment is applied to a portion of the surface of the light emitting element other than a portion where the electrode is printed by ink jet so that ink jet ink does not adhere to the surface. The light emitting element mounting method.
前記電極形成工程で、電極材料の微粒子を含有するインクをインクジェットで前記発光素子のうちの光放射領域の両側縁に沿って線状に印刷してp側電極とn側電極をそれぞれ線状に形成することを特徴とする請求項1に記載の発光素子実装方法。 In the electrode forming step, ink containing fine particles of the electrode material is printed in a line along both side edges of the light emitting region of the light emitting element by ink jet, so that the p-side electrode and the n-side electrode are respectively linear. The light emitting element mounting method according to claim 1, wherein the light emitting element mounting method is formed. 前記電極材料は、透明な電極材料であることを特徴とする請求項1又は2に記載の発光素子実装方法。 The electrode material, the light-emitting element mounting method according to claim 1 or 2, characterized in that a transparent electrode material. 前記電極形成工程で、前記電極を前記発光素子の光放射領域を取り囲むように形成することを特徴とする請求項1乃至3のいずれかに記載の発光素子実装方法。   The light emitting element mounting method according to claim 1, wherein, in the electrode forming step, the electrode is formed so as to surround a light emitting region of the light emitting element. 発光素子を搭載部材に実装する発光素子実装構造において、
前記発光素子の少なくとも一方の電極は、電極材料の微粒子を含有するインクをインクジェットで該発光素子の光放射領域の少なくとも一方の側縁に沿って線状に印刷して形成され、
前記発光素子の電極と前記搭載部材との間の配線下地部は、絶縁材料で斜面状に形成され、
前記発光素子の電極と前記搭載部材との間は、前記配線下地部上にインクジェットで印刷して形成した配線パターンで接続され
前記発光素子の表面のうちインクジェットで前記電極を印刷する部分以外の部分には、インクジェットのインクが付着しないように撥液性の表面処理が施されていることを特徴とする発光素子実装構造。
In the light emitting element mounting structure for mounting the light emitting element on the mounting member,
At least one electrode of the light emitting element is formed by printing ink containing fine particles of an electrode material in a line along at least one side edge of the light emitting region of the light emitting element by inkjet ,
The wiring base portion between the electrode of the light emitting element and the mounting member is formed in an inclined shape with an insulating material,
The electrode of the light emitting element and the mounting member are connected by a wiring pattern formed by printing on the wiring base portion with inkjet ,
A light-emitting element mounting structure , wherein a portion of the surface of the light-emitting element other than a part where the electrode is printed by ink-jet is subjected to a liquid-repellent surface treatment so that ink-jet ink does not adhere .
JP2010112692A 2010-05-14 2010-05-14 Light emitting element mounting method and light emitting element mounting structure Active JP5590711B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010112692A JP5590711B2 (en) 2010-05-14 2010-05-14 Light emitting element mounting method and light emitting element mounting structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010112692A JP5590711B2 (en) 2010-05-14 2010-05-14 Light emitting element mounting method and light emitting element mounting structure

Publications (2)

Publication Number Publication Date
JP2011243666A JP2011243666A (en) 2011-12-01
JP5590711B2 true JP5590711B2 (en) 2014-09-17

Family

ID=45410052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010112692A Active JP5590711B2 (en) 2010-05-14 2010-05-14 Light emitting element mounting method and light emitting element mounting structure

Country Status (1)

Country Link
JP (1) JP5590711B2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6082726B2 (en) * 2012-02-24 2017-02-15 国立大学法人九州工業大学 Thermoelectric conversion material
WO2013145071A1 (en) * 2012-03-26 2013-10-03 富士機械製造株式会社 Led package and manufacturing method for same
CN103840054A (en) * 2012-11-20 2014-06-04 展晶科技(深圳)有限公司 Light-emitting-diode chip
CN105009314B (en) 2013-02-27 2019-11-05 日亚化学工业株式会社 Light emitting device, light-emitting component installation method and light-emitting component mounting device
JP6398222B2 (en) * 2013-02-28 2018-10-03 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP2014212166A (en) * 2013-04-17 2014-11-13 日本特殊陶業株式会社 Optical waveguide device
JP6312412B2 (en) * 2013-12-04 2018-04-18 シャープ株式会社 Nitride semiconductor light emitting device
US11264548B2 (en) * 2016-02-24 2022-03-01 Magic Leap, Inc. Low profile interconnect for light emitter

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0538921U (en) * 1991-10-23 1993-05-25 三菱電線工業株式会社 Electrode structure of light emitting element
JP2000091638A (en) * 1998-09-14 2000-03-31 Matsushita Electric Ind Co Ltd Gallium nitride compound semiconductor light emitting element
JP2004335596A (en) * 2003-05-02 2004-11-25 Seiko Epson Corp Mounting structure and method of optical element
JP4539284B2 (en) * 2004-10-26 2010-09-08 パナソニック株式会社 Light emitting element mounting structure and method for manufacturing light emitting element mounting structure
JP4207004B2 (en) * 2005-01-12 2009-01-14 セイコーエプソン株式会社 Manufacturing method of semiconductor device
EP2434554B1 (en) * 2007-08-03 2018-05-30 Panasonic Intellectual Property Management Co., Ltd. Wavelength-converted light-emitting device with uniform emission
JP2009176969A (en) * 2008-01-25 2009-08-06 Ricoh Co Ltd Semiconductor laser device and image forming device using it
JP2009194108A (en) * 2008-02-13 2009-08-27 Seiko Instruments Inc Semiconductor light-emitting element, manufacturing method thereof and illumination apparatus

Also Published As

Publication number Publication date
JP2011243666A (en) 2011-12-01

Similar Documents

Publication Publication Date Title
JP5590711B2 (en) Light emitting element mounting method and light emitting element mounting structure
US9153735B2 (en) Optoelectronic semiconductor component
US8994062B2 (en) LED module
TWI513063B (en) Light emitting device and method of manufacturing the light emitting device
KR102709497B1 (en) Semiconductor device package
JP6398554B2 (en) Light emitting device and manufacturing method thereof
JP2011181699A (en) Light emitting device
US9105771B2 (en) Method for producing at least one optoelectronic semiconductor component
US9755121B2 (en) Method of detaching sealing member of light emitting device
JP2016225598A (en) Metal covering method, light-emitting device and manufacturing method therefor
JP2010263242A (en) Lighting device
JP6065586B2 (en) Light emitting device and manufacturing method thereof
JP2007123613A (en) Light-emitting device
EP3186840A1 (en) Flip chip led package
JP5128518B2 (en) Display device
JP5189835B2 (en) Surface mount LED with reflective frame
US20100127635A1 (en) Optoelectronic device
TWI677111B (en) Wiring substrate body and method of manufacturing the same
JP2015207737A (en) Light-emitting device and method of manufacturing the same
JP5290543B2 (en) Light emitting device
KR20190033438A (en) Display device
JP6319026B2 (en) Light emitting device and manufacturing method thereof
US20220209079A1 (en) Light-emitting module and method of manufacturing light-emitting module
JP2015153981A (en) light-emitting device
US9726357B2 (en) Light-emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130426

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140107

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140728

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140728

R150 Certificate of patent or registration of utility model

Ref document number: 5590711

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250