JP5588847B2 - Polymerizable composition, and photosensitive layer, permanent pattern, wafer level lens, solid-state imaging device, and pattern forming method using the same - Google Patents

Description

  The present invention relates to a polymerizable composition, and in particular, a polymerizable composition that can be suitably used for forming a solder resist, and a photosensitive layer, a permanent pattern, a wafer level lens, a solid-state imaging device, and pattern formation using the same. Regarding the method.

A solid-state imaging device (image sensor) used for a mobile phone, a digital camera, a digital video, a surveillance camera, or the like is a photoelectric conversion device integrated into an integrated circuit using a semiconductor device manufacturing technique. In recent years, solid-state imaging devices have been desired to be further miniaturized as mobile phones and digital cameras become smaller and lighter.
In order to reduce the size of a solid-state imaging device, an application of a through electrode and a method of thinning a silicon wafer have been proposed (see, for example, Patent Document 1). Although it is possible to reduce the size by polishing and thinning the silicon wafer, the thinning of the silicon wafer maintains the light blocking property of light with a wavelength of 800 nm or less, but it becomes easier to transmit light with a wavelength of 800 nm or more. It was. A photodiode used in a solid-state imaging device reacts to light with a wavelength of 800 nm or more and 1200 nm or less, and thus a new problem arises that the image quality is deteriorated due to transmission of light with a wavelength of 800 nm or more. It was.

  The solid-state imaging device has a color filter and a lens adjacent to one of the photodiodes, and an infrared cut filter in the vicinity of the color filter or the lens to block light having a wavelength of 800 to 1200 nm. However, metal wiring, solder resist, and the like exist on the opposite side of the color filter. The space between metal wirings is often filled with a solder resist, but there is a problem that infrared light such as leaked light entering the mobile phone or digital camera cannot be blocked. Therefore, conventionally, an infrared shielding layer is further provided on the outside of the solder resist that is poor in shielding against infrared rays, and means for ensuring the infrared shielding property is taken. Generally, however, there are steps on the solder resist due to wiring or the like. Therefore, there is a problem that it is difficult to apply the infrared light shielding layer material to the surface of the substrate having a step with a uniform film thickness, and if there is a thin portion, light is transmitted from there.

In order to provide the infrared light shielding layer only in a desired portion, it is preferable that the layer has photosensitivity and photolithography performance capable of patterning by exposure. Examples of the light-shielding photosensitive composition having photolithography include black resists using carbon black used for the formation of LCD color filters. Carbon black has a high light-shielding property in the visible region, but in the infrared region. The light shielding property is low, and when applying such a black resist as a solder resist, adding an amount of carbon black that secures the necessary light shielding property in the infrared region, the light shielding property in the visible region becomes too high. Usually, light used in image formation, such as a high-pressure mercury lamp, KrF, ArF, and the like, which is used for exposure, is shielded from light having a wavelength shorter than the visible range, resulting in a decrease in sensitivity and insufficient photocurability. There is a problem that an excellent pattern cannot be obtained even after a developing process using a developer.
In addition, at present, after forming the solder resist by a coating method, an infrared light shielding layer is separately provided. Therefore, in the formation of the solder resist and the formation of the infrared light shielding layer, a plurality of steps such as coating, exposure, development, post-heating, etc. Therefore, since the process is complicated and the cost increases, an improvement has been desired.
Therefore, attempts have been made to give the solder resist itself light-shielding properties. For example, a black solder resist composition containing a black colorant, a colorant other than black, and a polyfunctional epoxy compound has been proposed (for example, (See Patent Document 2). However, this composition is characterized in that the content of the black colorant is kept low by using it in combination with a colorant other than black, and has a light shielding property, in particular, a light shielding property in the infrared region and pattern formation. From the viewpoint of compatibility with the properties, it was insufficient in practice.

JP 2009-194396 A JP 2008-257045 A JP 2009-205029 A

In addition, for the purpose of detecting the position of the semiconductor substrate with a visible light sensor in the manufacturing process of the solid-state imaging device, the surface of the solid-state imaging device on the metal wiring and solder resist side of the semiconductor substrate (that is, opposite to the color filter or lens) A convex alignment mark is often provided at a predetermined position on the side surface.
In the case of the above-described embodiment in which an infrared light shielding layer is further provided on the outer side of the solder resist having poor infrared light shielding properties, even if the infrared light shielding layer is a layer having a light shielding property with respect to visible light, the infrared light shielding. For this purpose, it is not necessary to increase the thickness of this layer so much (because the film can be thinner than the solder resist layer to achieve the purpose of shielding infrared rays), even if the alignment mark is covered with an infrared shielding layer. It is considered that there was no major hindrance to detection by a visible light sensor. However, as in Patent Document 2, in particular, in order to give the solder resist itself a light-shielding property, in a form in which the solder resist composition contains a black colorant, when the alignment mark is covered with the solder resist layer, The trouble that the alignment mark is not detected by the visible light sensor is more likely to occur due to the thickness of the solder resist layer.

  In view of the above, there is a real need for a polymerizable composition that has a high light-shielding property in the infrared region, a high light-transmitting property in the visible light region, and can form an excellent pattern by alkali development.

  Patent Document 3 discloses a technique of using a layer containing an inorganic near-infrared absorber as a near-infrared absorbing layer for an image display device. For example, a polymerizable compound and a polymerization initiator are disclosed in the examples. And a near-infrared absorbing layer-forming coating solution containing a near-infrared absorber, but the layer obtained from this coating solution is not patterned by exposure and alkali development. In fact, even if this layer is an unexposed region, the solubility in an alkali developer is insufficient, and the layer has little alkali developability.

This invention is made | formed in view of this present condition, and makes it a subject to solve the said various problems in the past and to achieve the following objectives.
That is, the object of the present invention is to form a pattern having high light-shielding property in the infrared region, high light-transmitting property in the visible light region, and excellent resolution by alkali development, and stable over time. Another object of the present invention is to provide a polymerizable composition having excellent properties, and a photosensitive layer, a permanent pattern, a wafer level lens, a solid-state imaging device, and a pattern forming method using the same.

The present invention has the following configuration, whereby the above object of the present invention is achieved.
<1>
A polymerizable composition comprising a photopolymerization initiator, a polymerizable compound, a tungsten compound represented by the following general formula (I), an alkali-soluble binder, and an elastomer.
M _x W _y O _z (I)
M represents a metal, W represents tungsten, and O represents oxygen.
0.001 ≦ x / y ≦ 1.1
2.2 ≦ z / y ≦ 3.0
<2>
The polymerizable composition according to <1>, wherein the alkali-soluble binder has an acid group.
<3>
The polymerizable composition according to <2>, wherein the acid group is a carboxyl group.
<4>
The polymerizable composition according to any one of <1> to <3>, wherein the alkali-soluble binder has a crosslinkable group.
<5>
The polymerizable composition according to any one of <1> to <4>, wherein M is an alkali metal.
<6>
The polymerizable composition according to any one of <1> to <5>, wherein the polymerizable compound is a polyfunctional polymerizable compound having a plurality of polymerizable groups in the molecule.
<7>
The polymerizable composition according to any one of <1> to <6>, further containing an inorganic filler.
<8>
The polymerizable composition according to any one of <1> to <7>, which is for a solder resist.
<9>
<1>-<8> The photosensitive layer formed from the polymeric composition of any one of <8>.
<10>
A permanent pattern formed from the polymerizable composition according to any one of <1> to <8>.
<11>
The permanent pattern according to <10>, wherein the permanent pattern is a solder resist layer.
<12>
The permanent pattern according to <10>, wherein the permanent pattern is an infrared ray shielding film.
<13>
A wafer level lens having a lens and the permanent pattern according to <10> formed on a peripheral edge of the lens.
<14>
<10>-<13> The solid-state image sensor which has a permanent pattern of any one of <13>.
<15>
A solid-state imaging device having a solid-state imaging device substrate having an imaging device portion formed on one surface and an infrared shielding film provided on the other surface side of the solid-state imaging device substrate, wherein the infrared shielding film is < Solid-state image sensor which is a permanent pattern of 10>.
<16>
<9> The step of forming the photosensitive layer, the step of pattern exposing the photosensitive layer to cure the exposed portion, and the step of removing the unexposed portion by alkali development to form a permanent pattern. The pattern formation method which has in order.
The present invention is an invention according to the above <1> to <16>, but other matters (for example, the following [1] to [17]) are also described below.

[1] A polymerizable composition comprising a polymerization initiator, a polymerizable compound, a tungsten compound, an alkali-soluble binder, and an elastomer.
[2] The polymerizable composition according to [1], wherein the alkali-soluble binder has an acid group.
[3] The polymerizable composition as described in [2] above, wherein the acid group is a carboxyl group.
[4] The polymerizable composition according to any one of [1] to [3], wherein the alkali-soluble binder has a crosslinkable group.
[5] The polymerizable composition according to any one of [1] to [4], wherein the tungsten compound is represented by the following general formula (I).
M _x W _y O _z (I)
M represents a metal, W represents tungsten, and O represents oxygen.
0.001 ≦ x / y ≦ 1.1
2.2 ≦ z / y ≦ 3.0
[6] The polymerizable composition as described in [5] above, wherein M is an alkali metal.
[7] The polymerizable composition according to any one of [1] to [6], wherein the polymerizable compound is a polyfunctional polymerizable compound having a plurality of polymerizable groups in the molecule.
[8] The polymerizable composition according to any one of [1] to [7], further containing a filler.
[9] The polymerizable composition according to any one of [1] to [8], which is for a solder resist.
[10] A photosensitive layer formed from the polymerizable composition according to any one of [1] to [9].
[11] A permanent pattern formed from the polymerizable composition according to any one of [1] to [9].
[12] The permanent pattern according to [11], wherein the permanent pattern is a solder resist layer.
[13] The permanent pattern according to [11], wherein the permanent pattern is an infrared ray shielding film.
[14] A wafer level lens having a lens and the permanent pattern according to [11] formed on a peripheral edge of the lens.
[15] A solid-state imaging device having the permanent pattern according to any one of [11] to [14].
[16] A solid-state image pickup device having a solid-state image pickup device substrate having an image pickup device portion formed on one surface and an infrared light-shielding film provided on the other surface side of the solid-state image pickup device substrate, The solid-state image sensor whose film is a permanent pattern given in the above [11].
[17] A step of forming the photosensitive layer according to the above [10], a step of pattern exposing the photosensitive layer to cure the exposed portion, and a step of removing the unexposed portion by alkali development to form a permanent pattern Are formed in this order.

  According to the present invention, it is possible to form a pattern having a high light shielding property in the infrared region, a high light transmission property in the visible light region, and an excellent resolution by alkali development. It is an object to provide an excellent polymerizable composition, and a photosensitive layer, a permanent pattern, a wafer level lens, a solid-state imaging device, and a pattern forming method using the same.

It is a schematic sectional drawing which shows the structure of the camera module provided with the solid-state image sensor which concerns on embodiment of this invention. 1 is a schematic cross-sectional view of a solid-state image sensor according to an embodiment of the present invention. It is a top view which shows an example of a wafer level lens array. FIG. 4 is a sectional view taken along line AA shown in FIG. 3. It is a figure which shows the state which is supplying the molding material used as a lens to a board | substrate. 6A to 6C are diagrams illustrating a procedure for forming a lens on a substrate with a mold. 7A to 7C are schematic diagrams illustrating a process of forming a patterned light-shielding film on a substrate on which a lens is molded. It is sectional drawing which shows an example of a wafer level lens array. 9A to 9C are schematic views showing other modes of the light shielding film forming step. FIG. 10A to FIG. 10C are schematic views showing a process of molding a lens on a substrate having a patterned light-shielding film.

Hereinafter, the polymerizable composition of the present invention will be described in detail.
In addition, in the description of the group (atomic group) in this specification, the description which does not describe substitution and non-substitution includes the thing which has a substituent with the thing which does not have a substituent. . For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). Moreover, in this specification, a viscosity value points out the value in 25 degreeC.
The polymerizable composition of the present invention contains a polymerization initiator, a polymerizable compound, a tungsten compound, an alkali-soluble binder, and an elastomer, and if necessary, an infrared shielding material other than the tungsten compound, a dispersant, a sensitizer, and a crosslinking agent. An agent, a curing accelerator, an inorganic filler, a surfactant, and other components may be contained.
The polymerizable composition according to the present invention is, for example, a negative composition, typically a negative resist composition. Hereinafter, the structure of this composition is demonstrated.
The description of the constituent elements described below may be made based on typical embodiments of the present invention, but the present invention is not limited to such embodiments. In the present specification, a numerical range represented by using “to” means a range including numerical values described before and after “to” as a lower limit value and an upper limit value.
In the present specification, “(meth) acrylate” represents acrylate and methacrylate, “(meth) acryl” represents acryl and methacryl, and “(meth) acryloyl” represents acryloyl and methacryloyl. In the present specification, “monomer” and “monomer” are synonymous.The monomer in the present invention is distinguished from oligomer and polymer, and refers to a compound having a mass average molecular weight of 2,000 or less. In the specification, a polymerizable compound means a compound having a polymerizable group, and may be a monomer or a polymer, and a polymerizable group is a group involved in a polymerization reaction. say.

[1] Polymerization initiator Although there is no restriction | limiting in particular about the polymerization initiator used for the polymeric composition of this invention, It is preferable that it is a photopolymerizable compound. When polymerization is initiated by light, those having photosensitivity to visible light from the ultraviolet region are preferred. Of these, acetophenone compounds are most preferred.
Examples of the polymerization initiator suitable for the present invention will be given below, but the present invention is not limited thereto.

Specific examples of the acetophenone compound include 2,2-diethoxyacetophenone, p-dimethylaminoacetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and p-dimethylaminoacetophenone. 4′-isopropyl-2-hydroxy-2-methyl-propiophenone, 1-hydroxy-cyclohexyl-phenyl-ketone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butane-1 -One, 2-tolyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropane-1 -One, 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one, 2 -Benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one, 2- (dimethylamino) -2-[(4-methylphenyl) methyl] -1- [4- ( 4-morpholinyl) phenyl] -1-butanone and 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one.
Among these, α-aminoacetophenone compounds are preferable, and 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one is particularly preferable. Examples of commercially available α-aminoacetophenone compounds include IRGACURE 907, IRGACURE 369, and IRGACURE 379 (trade names: all manufactured by BASF Japan).

A polymerization initiator may be used individually by 1 type, and may use 2 or more types together.
The content of the polymerization initiator with respect to the total solid mass of the polymerizable composition of the present invention is preferably 0.01% by mass to 30% by mass, more preferably 0.1% by mass to 20% by mass, and 0.1% by mass. % To 15% by mass is particularly preferable.

[2] Polymerizable compound The polymerizable composition of the present invention contains a polymerizable compound. The polymerizable compound used here includes a functional group that reacts with at least one of an acid, a radical, and heat (in this specification, such a functional group may be referred to as a “polymerizable group”). Any compound may be used as long as it is a compound having in the molecule, and it is preferably a polyfunctional polymerizable compound having a plurality of polymerizable groups in the molecule.
Examples of the polymerizable compound having a polymerizable functional group that reacts with at least one of acid, radical, and heat, which are preferably used in the present invention, include an unsaturated ester functional group, an unsaturated amide group, a vinyl ether group, and allyl. Examples include ethylenically unsaturated group-containing compounds having an ethylenically unsaturated group such as a group; methylol compounds, bismaleimide compounds, benzocyclobutene compounds, bisallylnadiimide compounds, and benzoxazine compounds.

Examples of the polymerizable compound that can be preferably used in the present invention include a general radical polymerizable compound, and a compound widely known as a compound having an ethylenically unsaturated double bond in the industrial field is used without particular limitation. Can do.
These have chemical forms such as monomers, prepolymers, that is, dimers, trimers and oligomers, or mixtures thereof and copolymers thereof.
Examples of monomers and copolymers thereof include unsaturated carboxylic acids (eg, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.), esters, amides, and copolymers thereof Examples thereof include unsaturated carboxylic acid esters, esters of unsaturated carboxylic acids and aliphatic polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and aliphatic polyvalent amine compounds.
In particular, an ester of an unsaturated carboxylic acid and an aliphatic polyhydric alcohol compound can exhibit high hydrophobicity in the exposed area, so that it is easy to form a pattern having a desired shape by alkali development, and a highly durable pattern. (In particular, the above-mentioned effect is remarkable when more severe durability is required for the solder resist, such as when the wiring density of the metal wiring covered with the solder resist is high).
In addition, an addition reaction product of an unsaturated carboxylic acid ester or amide having a nucleophilic substituent such as a hydroxyl group, amino group or mercapto group with a monofunctional or polyfunctional isocyanate or epoxy, and monofunctional or polyfunctional A dehydration condensation reaction product with a functional carboxylic acid is also preferably used.

  Further, an addition reaction product of an unsaturated carboxylic acid ester or amide having an electrophilic substituent such as an epoxy group or an epoxy group with a monofunctional or polyfunctional alcohol, amine or thiol, a halogen group or In addition, a substitution reaction product of an unsaturated carboxylic acid ester or amide having a leaving substituent such as a tosyloxy group and a monofunctional or polyfunctional alcohol, amine or thiol is also suitable. As another example, it is also possible to use a group of compounds substituted with unsaturated phosphonic acid, styrene, vinyl ether or the like instead of the unsaturated carboxylic acid.

  As the unsaturated carboxylic acid ester, a methacrylic acid ester is preferable, and tetramethylene glycol dimethacrylate, triethylene glycol dimethacrylate, neopentyl glycol dimethacrylate, trimethylolpropane trimethacrylate, trimethylolethane trimethacrylate, ethylene glycol dimethacrylate, 1 , 3-butanediol dimethacrylate, hexanediol dimethacrylate, pentaerythritol dimethacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol dimethacrylate, dipentaerythritol hexamethacrylate, sorbitol trimethacrylate, sorbitol tetramethacrylate, bis [ p- (3- Takuriruokishi-2-hydroxypropoxy) phenyl] dimethyl methane, bis - [p- (methacryloxyethoxy) phenyl] dimethyl methane, and their EO-modified product, PO-modified products thereof.

  As the unsaturated carboxylic acid ester, itaconic acid ester is also preferable, ethylene glycol diitaconate, propylene glycol diitaconate, 1,3-butanediol diitaconate, 1,4-butanediol diitaconate, tetramethylene Examples include glycol diitaconate, pentaerythritol diitaconate, sorbitol tetritaconate, and the like. Examples of crotonic acid esters include ethylene glycol dicrotonate, tetramethylene glycol dicrotonate, pentaerythritol dicrotonate, and sorbitol tetradicrotonate. Examples of isocrotonic acid esters include ethylene glycol diisocrotonate, pentaerythritol diisocrotonate, and sorbitol tetraisocrotonate. Examples of maleic acid esters include ethylene glycol dimaleate, triethylene glycol dimaleate, pentaerythritol dimaleate, and sorbitol tetramaleate.

Specific examples of the monomer of an ester of an aliphatic polyhydric alcohol compound and an unsaturated carboxylic acid include (meth) acrylic acid ester, ethylene glycol diacrylate, triethylene glycol diacrylate, 1,3-butanediol diacrylate, Tetramethylene glycol diacrylate, propylene glycol diacrylate, neopentyl glycol diacrylate, trimethylolpropane triacrylate, trimethylolpropane tri (acryloyloxypropyl) ether, trimethylolethane triacrylate, hexanediol diacrylate, 1,4-cyclohexane Diol diacrylate, tetraethylene glycol diacrylate, tricyclodecane dimethanol diacrylate, tricyclodecanedi Tanol dimethacrylate, pentaerythritol diacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol diacrylate, dipentaerythritol hexaacrylate, tricyclodecane dimethanol diacrylate, sorbitol triacrylate, sorbitol tetraacrylate, sorbitol pentaacrylate Sorbitol hexaacrylate, tri (acryloyloxyethyl) isocyanurate, polyester acrylate oligomer, and the like. Moreover, EO modified body of these compounds, or PO modified body is also mentioned.
Among these, dipentaerythritol hexaacrylate and tricyclodecane dimethanol diacrylate are preferable, and tricyclodecane dimethanol diacrylate is most preferable.

  Examples of other esters include aliphatic alcohol esters described in JP-B-51-47334 and JP-A-57-196231, JP-A-59-5240, JP-A-59- Those having an aromatic skeleton described in Japanese Patent No. 5241 and JP-A-2-226149, those containing an amino group described in JP-A-1-165613, and the like are also preferably used. Furthermore, the ester monomers described above can also be used as a mixture.

  Specific examples of amide monomers of aliphatic polyvalent amine compounds and unsaturated carboxylic acids include methylene bis-acrylamide, methylene bis-methacrylamide, 1,6-hexamethylene bis-acrylamide, 1,6-hexamethylene bis. -Methacrylamide, diethylenetriamine trisacrylamide, xylylene bisacrylamide, xylylene bismethacrylamide and the like. Examples of other preferable amide monomers include those having a cyclohexylene structure described in JP-B-54-21726.

  In addition, urethane-based addition polymerizable compounds produced by using an addition reaction of isocyanate and hydroxyl group are also suitable, and specific examples thereof include, for example, one molecule described in JP-B-48-41708. A vinyl urethane containing two or more polymerizable vinyl groups in one molecule obtained by adding a vinyl monomer containing a hydroxyl group represented by the following general formula (E) to a polyisocyanate compound having two or more isocyanate groups. Compounds and the like.

^{_{CH 2 = C (R 4)}} COOCH 2 CH (R 5) OH (E)
[However, R ⁴ and R ⁵ each independently represent H or CH ₃ . ]

  Also, urethane acrylates such as those described in JP-A-51-37193, JP-B-2-32293, and JP-B-2-16765, JP-B-58-49860, JP-B-56-17654, Urethane compounds having an ethylene oxide skeleton described in JP-B-62-39417 and JP-B-62-39418 are also suitable. Further, by using addition polymerizable compounds having an amino structure or a sulfide structure in the molecule described in JP-A-63-277653, JP-A-63-260909, and JP-A-1-105238, A polymerizable composition having an extremely excellent photosensitive speed can be obtained.

  Other examples include polyester acrylates, epoxy resins and (meth) acrylic acid as described in JP-A-48-64183, JP-B-49-43191, JP-B-52-30490, and JP-A-52-30490. Mention may be made of polyfunctional acrylates and methacrylates such as reacted epoxy acrylates. Further, specific unsaturated compounds described in JP-B-46-43946, JP-B-1-40337 and JP-B-1-40336, vinylphosphonic acid compounds described in JP-A-2-25493, and the like can also be mentioned. . In some cases, a structure containing a perfluoroalkyl group described in JP-A-61-22048 is preferably used. Furthermore, Journal of Japan Adhesion Association vol. 20, no. 7, pages 300 to 308 (1984), which are introduced as photocurable monomers and oligomers, can also be used.

In the present invention, when a radically polymerizable compound is added as a monomer, a polyfunctional polymerizable compound containing 2 to 6 ethylenically unsaturated bonds is preferably used, and 2 to 4 ethylenically unsaturated bonds are preferably used. It is more preferable to contain, and it is most preferable to contain two (meth) acrylic acid ester structures.
Further, from the viewpoint of curing sensitivity and developability of the unexposed area, a compound containing an EO-modified product is preferable, and from the viewpoint of curing sensitivity and exposed area strength, a compound containing a urethane bond is also preferably used. . Furthermore, from the viewpoint of developability during pattern formation, a compound having an acid group is preferably used.

  In addition, ethylenically unsaturated compounds having an acid group are also suitable. Examples of commercially available products include TO-756, which is a carboxyl group-containing trifunctional acrylate manufactured by Toagosei Co., Ltd., and a carboxyl group-containing pentafunctional acrylate. Some TO-1382 and the like can be mentioned.

  In addition, examples of the high heat-resistant polymerizable compound include benzocyclobutene (BCB), bisallylnadiimide (BANI), benzoxazine, melamine, and analogs thereof.

Two or more polymerizable compounds can be used.
The content of the polymerizable compound is preferably 3% by mass or more and 80% by mass or less, and preferably 5% by mass or more and 50% by mass or less with respect to the total solid mass of the polymerizable composition of the present invention. More preferred.
The polymerizable compound may be the same as or different from the alkali-soluble binder.
More specifically, when the polymerizable compound is a polymer, the polymerizable compound may be the same as the alkali-soluble binder described in detail later (that is, the polymerizable compound and the alkali-soluble binder are the same component). May be). In this embodiment, the content of the polymerizable compound is preferably 3% by mass or more and 80% by mass or less, preferably 5% by mass or more and 60% by mass or less, based on the total solid content mass of the polymerizable composition of the present invention. It is more preferable that

[3] Tungsten compound The polymerizable composition of the present invention contains a tungsten compound.
Tungsten compound is an infrared shielding material that has high absorption for infrared rays (light having a wavelength of about 800 to 1200 nm) (that is, high light shielding property (shielding property) for infrared rays) and low absorption for visible light. is there. Therefore, according to the polymerizable composition of the present invention, by containing the tungsten compound, it is possible to form a pattern having a high light shielding property in the infrared region and a high light transmitting property in the visible light region.
In addition, the tungsten compound has less absorption even for light having a shorter wavelength than that in the visible range used for exposure of a high-pressure mercury lamp, KrF, ArF, or the like used for image formation. Therefore, when the tungsten compound is combined with the polymerization initiator, the polymerizable compound, and the alkali-soluble binder, a pattern having excellent resolution by alkali development can be obtained.

Examples of the tungsten compound include a tungsten oxide compound, a tungsten boride compound, a tungsten sulfide compound, and the like, and a tungsten oxide compound represented by the following general formula (composition formula) (I) is more preferable.
M _x W _y O _z (I)
M represents a metal, W represents tungsten, and O represents oxygen.
0.001 ≦ x / y ≦ 1.1
2.2 ≦ z / y ≦ 3.0

  As the metal of M, alkali metal, alkaline earth metal, Mg, Zr, Cr, Mn, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Examples include Ga, In, Tl, Sn, Pb, Ti, Nb, V, Mo, Ta, Re, Be, Hf, Os, and Bi, and an alkali metal is preferable. The metal of M may be one type or two or more types.

  M is preferably an alkali metal, preferably Rb or Cs, and more preferably Cs.

When x / y is 0.001 or more, infrared rays can be sufficiently shielded, and when it is 1.1 or less, generation of an impurity phase in the tungsten compound can be more reliably avoided. it can.
When z / y is 2.2 or more, chemical stability as a material can be further improved, and when it is 3.0 or less, infrared rays can be sufficiently shielded.

Specific examples of the tungsten oxide compound represented by the general formula (I) include Cs _0.33 WO ₃ , Rb _0.33 WO ₃ , K _0.33 WO ₃ , Ba _0.33 WO _{3 and the} like. Cs _0.33 WO ₃ or Rb _0.33 WO ₃ is preferable, and Cs _0.33 WO ₃ is more preferable.

  The tungsten compound is preferably fine particles. The average particle diameter of the tungsten fine particles is preferably 800 nm or less, more preferably 400 nm or less, and further preferably 200 nm or less. When the average particle diameter is in such a range, the tungsten fine particles are less likely to block visible light by light scattering, and thus the translucency in the visible light region can be further ensured. From the viewpoint of avoiding photoacid disturbance, the average particle size is preferably as small as possible. However, for reasons such as ease of handling during production, the average particle size of the tungsten fine particles is usually 1 nm or more.

  Two or more tungsten compounds can be used.

Tungsten compounds are commercially available, but when the tungsten compound is, for example, a tungsten oxide compound, the tungsten oxide compound is obtained by a method of heat-treating the tungsten compound in an inert gas atmosphere or a reducing gas atmosphere. (See Japanese Patent No. 4096205).
The tungsten oxide compound is also available as a dispersion of tungsten fine particles such as YMF-02 manufactured by Sumitomo Metal Mining Co., Ltd.

  The content of the tungsten compound is preferably 3% by mass or more and 20% by mass or less, and more preferably 5% by mass or more and 15% by mass or less with respect to the total solid mass of the polymerizable composition of the present invention. preferable.

[4] Alkali-soluble binder The polymerizable composition of the present invention contains an alkali-soluble binder (alkali-soluble resin). Thereby, when it exposes in order to form a pattern in the film | membrane obtained from polymeric composition, an unexposed part can be removed with an alkali developing solution, and the pattern excellent in alkali development can be formed.

The alkali-soluble binder is not particularly limited as long as it is alkali-soluble, and can be appropriately selected according to the purpose. For example, (meth) acrylic resin, urethane resin, polyvinyl alcohol, polyvinyl butyral, polyvinyl formal , Polyamide, polyester and the like, and a (meth) acrylic resin is preferable.
The alkali-soluble binder preferably has an acid group.
Examples of the acid group include a carboxyl group, a sulfonic acid group, a phosphonic acid group, a phosphoric acid group, a sulfonamide group, a phenolic hydroxyl group, a thiol group, and the like. From the viewpoint of properties, it is preferably a carboxyl group.

  The alkali-soluble binder having an acid group is not particularly limited, but is preferably a polymer obtained using a polymerizable compound having an acid group as a monomer component.

There is no restriction | limiting in particular as a polymeric compound which has an acid group, According to the objective, it can select suitably, For example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, incrotonic acid, maleic acid, p-carboxyl Examples thereof include styrene, p-hydroxystyrene, and among these, acrylic acid, methacrylic acid, p-carboxylstyrene, and p-hydroxystyrene are preferable. Here, the polymer obtained using p-hydroxystyrene is a polymer having a phenolic hydroxyl group as an acid group. Examples of alkali-soluble binders having a phenolic hydroxyl group include Marka Linker M, Marka Linker MB (product name: Maruzen Petrochemical), VP-2500, VP-12000 (p-vinylphenol polymer product name: Nippon Soda). Can be mentioned.
The acid dissociation constant pKa of the polymerizable compound having an acid group is preferably 4.0 to 11.0, more preferably 4.0 to 9.0, and still more preferably 4.0 to 6.0. .

Although there is no restriction | limiting in particular as a polymeric compound which does not have an acid group, For example, (meth) acrylic acid ester (an alkyl ester, an aryl ester, an aralkyl ester etc.) can be mentioned suitably.
The alkyl group in the alkyl ester moiety of the (meth) acrylate ester may be linear or branched, and is preferably an alkyl group having 1 to 10 carbon atoms, and 1 to 6 carbon atoms. The alkyl group is more preferably.
The aryl group in the aryl ester moiety of the (meth) acrylic acid ester is preferably an aryl group having 6 to 14 carbon atoms, and more preferably an aryl group having 6 to 10 carbon atoms.
The aralkyl group in the aralkyl ester moiety of the (meth) acrylic acid ester is preferably an aralkyl group having 7 to 20 carbon atoms, and more preferably an aralkyl group having 7 to 12 carbon atoms.

The molar ratio of the monomer corresponding to the polymerizable compound having an acid group and the monomer corresponding to the polymerizable compound having no acid group is usually 1:99 to 99: 1, and 30:70 to 99: 1. It is preferable that it is and it is more preferable that it is 50: 50-99: 1.
The content of the acid group in the alkali-soluble binder is not particularly limited, but is preferably 0.5 meq / g to 4.0 meq / g, and preferably 1.0 meq / g to 3.0 meq / g. More preferred. When the content is 0.5 meq / g or more, sufficient alkali developability can be obtained, and an excellent pattern can be obtained more reliably. When the content is 4.0 meq / g or less, it is possible to reliably avoid the possibility that the strength of the permanent pattern is impaired.

  It is preferable that the alkali-soluble binder further has a crosslinkable group, which can improve both the curability of the exposed area and the alkali developability of the unexposed area, and provides a highly durable pattern. (In particular, the above-mentioned effect is remarkable when more severe durability is required for the solder resist, such as when the wiring density of the metal wiring covered with the solder resist is high). Here, the crosslinkable group is a group that crosslinks the binder polymer in the course of a polymerization reaction that occurs in the photosensitive layer when the photosensitive layer obtained from the polymerizable composition is exposed or heated. Although it will not specifically limit if it is a group of such a function, For example, an ethylenically unsaturated bond group, an amino group, an epoxy group etc. are mentioned as a functional group which can be addition-polymerized. Moreover, the functional group which can become a radical by light irradiation may be sufficient, and as such a crosslinkable group, a thiol group, a halogen group, etc. are mentioned, for example. Of these, an ethylenically unsaturated bond group is preferable. As the ethylenically unsaturated bond group, a styryl group, a (meth) acryloyl group, and an allyl group are preferable. From the viewpoint of coexistence of the stability of the crosslinkable group before exposure and the strength of the permanent pattern, (meth) acryloyl More preferably, it is a group.

  Alkali-soluble binders, for example, have free radicals (polymerization initiation radicals or growth radicals in the polymerization process of a polymerizable compound) added to the crosslinkable functional group, and are added directly between polymers or via a polymerization chain of the polymerizable compound. Polymerizes to form crosslinks between the polymer molecules and cure. Alternatively, atoms in the polymer (eg, hydrogen atoms on carbon atoms adjacent to the functional bridging group) are abstracted by free radicals to form polymer radicals that are bonded together, thereby causing cross-linking between polymer molecules. Forms and cures.

The content of the crosslinkable group in the alkali-soluble binder is not particularly limited, but is preferably 0.5 meq / g to 3.0 meq / g, more preferably 1.0 meq / g to 3.0 meq / g. 5 meq / g to 2.8 meq / g is particularly preferable. When the content is 0.5 meq / g or more, the curing reaction amount is sufficient and high sensitivity is obtained, and when the content is 3.0 meq / g or less, the storage stability of the polymerizable composition is increased. can do.
Here, the content (meq / g) can be measured by, for example, iodine value titration.
The alkali-soluble binder having a crosslinkable group is described in detail in JP-A No. 2003-262958, and the compounds described therein can also be used in the present invention.
The alkali-soluble binder containing these crosslinkable groups is preferably an alkali-soluble binder having an acid group and a crosslinkable group, and typical examples thereof are shown below.
(1) Urethane modification obtained by reacting an isocyanate group and an OH group in advance, leaving one unreacted isocyanate group and reacting at least one (meth) acryloyl group with an acrylic resin containing a carboxyl group A polymerizable double bond-containing acrylic resin.
(2) An unsaturated group-containing acrylic resin obtained by a reaction between an acrylic resin containing a carboxyl group and a compound having both an epoxy group and a polymerizable double bond in the molecule.
(3) A polymerizable double bond-containing acrylic resin obtained by reacting an acrylic resin containing an OH group with a dibasic acid anhydride having a polymerizable double bond.
Among the above, the resins (1) and (2) are particularly preferable.

  Moreover, as an alkali-soluble binder having an acid group and a crosslinkable group, a polymer compound having an acidic group and an ethylenically unsaturated bond in a side chain, and having a bisphenol A skeleton and a bisphenol F skeleton And a novolak resin having an acidic group and an ethylenically unsaturated bond, a resole resin, and the like. These resins can be obtained by the technique described in paragraph Nos. [0008] to [0027] of JP-A No. 11-240930.

  As described above, the alkali-soluble binder is preferably a (meth) acrylic resin, and the “(meth) acrylic resin” includes (meth) acrylic acid, (meth) acrylic acid ester (alkyl ester, aryl ester). Esters, aralkyl esters, etc.), (meth) acrylamides, and copolymers having (meth) acrylic acid derivatives such as (meth) acrylamide derivatives as polymerization components.

  A suitable example of the (meth) acrylic resin is a copolymer having a repeating unit containing an acid group. Preferred examples of the acid group include those described above. As the repeating unit containing an acid group, a repeating unit derived from (meth) acrylic acid or one represented by the following general formula (I) is preferably used.

(In General Formula (I), R ¹ represents a hydrogen atom or a methyl group, R ² represents a single bond or an n + 1 valent linking group, A represents an oxygen atom or —NR ³ —, and R ³ represents a hydrogen atom. Or, it represents a monovalent hydrocarbon group having 1 to 10 carbon atoms, and n represents an integer of 1 to 5.)

The linking group represented by R ² in the general formula (I) is composed of one or more atoms selected from the group consisting of a hydrogen atom, a carbon atom, an oxygen atom, a nitrogen atom, a sulfur atom and a halogen atom. The number of atoms constituting the linking group represented by R ² is preferably 1-80. Specific examples include an alkylene group, an arylene group, and the like, and these divalent groups have a structure in which a plurality of these are connected by any of an amide bond, an ether bond, a urethane bond, a urea bond, and an ester bond. May be. R ² is preferably a single bond, an alkylene group, or a structure in which a plurality of alkylene groups are linked by at least one of an amide bond, an ether bond, a urethane bond, a urea bond, and an ester bond.
The alkylene group preferably has 1 to 5 carbon atoms, and more preferably 1 to 3 carbon atoms.
The arylene group preferably has 6 to 14 carbon atoms, and more preferably 6 to 10 carbon atoms.
The alkylene group and the arylene group may further have a substituent, and examples of such a substituent include a monovalent nonmetallic atomic group excluding a hydrogen atom, and a halogen atom (—F, -Br, -Cl, -I), hydroxyl group, cyano group, alkoxy group, aryloxy group, mercapto group, alkylthio group, arylthio group, alkylcarbonyl group, arylcarbonyl group, carboxyl group and its conjugate base group, alkoxycarbonyl group , Aryloxycarbonyl group, carbamoyl group, aryl group, alkenyl group, alkynyl group and the like.

The hydrocarbon group for R ³ preferably has 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and still more preferably 1 to 3 carbon atoms.
R ³ is most preferably a hydrogen atom or a methyl group.
n is preferably 1 to 3, particularly preferably 1 or 2, and most preferably 1.

  The ratio (mol%) of the repeating unit having an acid group in all repeating unit components of the (meth) acrylic resin is preferably 10 to 90% from the viewpoint of developability. Considering both the developability and the strength of the permanent pattern, 50 to 85% is more preferable, and 60 to 80% is particularly preferable.

  As described above, the (meth) acrylic resin preferably further has a crosslinkable group, and specific examples of the crosslinkable group and the content thereof are the same as those described above.

  The (meth) acrylic polymer used in the present invention includes, in addition to the above-described polymer unit having an acid group and polymer unit having a crosslinkable group, a polymer unit of (meth) acrylic acid alkyl or aralkyl ester, (meth) acrylamide. Alternatively, it may have a polymer unit of a derivative thereof, a polymer unit of α-hydroxymethyl acrylate, or a polymer unit of a styrene derivative. The alkyl group of the (meth) acrylic acid alkyl ester is preferably an alkyl group having 1 to 5 carbon atoms and an alkyl group having the aforementioned substituent having 2 to 8 carbon atoms, and a methyl group is more preferable. Examples of the (meth) acrylic acid aralkyl ester include benzyl (meth) acrylate. Examples of (meth) acrylamide derivatives include N-isopropylacrylamide, N-phenylmethacrylamide, N- (4-methoxycarbonylphenyl) methacrylamide, N, N-dimethylacrylamide, morpholinoacrylamide and the like. Examples of the α-hydroxymethyl acrylate include ethyl α-hydroxymethyl acrylate and cyclohexyl α-hydroxymethyl acrylate. Examples of styrene derivatives include styrene and 4-tertbutylstyrene.

  As an alkali-soluble binder other than (meth) acrylic resin, an acetal-modified polyvinyl alcohol-based binder polymer having an acid group described in European Patent 993966, European Patent 1204000, Japanese Patent Application Laid-Open No. 2001-318463, etc. has film strength and developability. It is excellent in balance and is suitable. In addition, polyvinyl pyrrolidone, polyethylene oxide, and the like are useful as the water-soluble linear organic polymer. In order to increase the strength of the cured film, alcohol-soluble nylon, polyether of 2,2-bis- (4-hydroxyphenyl) -propane and epichlorohydrin, and the like are also useful.

  Among these, [benzyl (meth) acrylate / (meth) acrylic acid / other addition-polymerizable vinyl monomers as required] copolymers, and [allyl (meth) acrylate / (meth) acrylic acid / necessary The other addition-polymerizable vinyl monomer] copolymer is suitable because it is excellent in the balance of film strength, sensitivity and developability.

The weight average molecular weight of the binder polymer that can be used in the polymerizable composition of the present invention is preferably 3,000 or more, more preferably 5,000 to 300,000, and most preferably 10,000 to 3. The number average molecular weight is preferably 1,000 or more, and more preferably in the range of 2,000 to 250,000. The polydispersity (weight average molecular weight / number average molecular weight) is preferably 1 or more, and more preferably 1.1 to 10.
These alkali-soluble binders may be random polymers, block polymers, graft polymers or the like.

  The alkali-soluble binder can be synthesized by a conventionally known method. Examples of the solvent used in the synthesis include tetrahydrofuran, ethylene dichloride, cyclohexanone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and butyl acetate. These solvents are used alone or in combination of two or more.

  An alkali-soluble binder may be used individually by 1 type, and may use 2 or more types together.

  The content of the alkali-soluble binder is preferably 5% by mass to 80% by mass and more preferably 30% by mass to 60% by mass with respect to the total solid mass of the polymerizable composition of the present invention. When the content is in the above range, exposure sensitivity is good, processing time is short, and good TCT resistance is obtained.

[5] Elastomer The polymerizable composition of the present invention contains an elastomer. Although the mechanism of action is not clear, since the polymerizable composition of the present invention contains an elastomer, it has excellent stability over time (more specifically, in the liquid of the polymerizable composition, the viscosity is dependent on time. (Small) polymerizable composition.

  There is no restriction | limiting in particular as an elastomer which can be used for this invention, According to the objective, it can select suitably, For example, a styrene elastomer, an olefin elastomer, a urethane elastomer, a polyester elastomer, a polyamide elastomer, an acrylic elastomer And silicone elastomers. These elastomers are composed of a hard segment component and a soft segment component. In general, the former contributes to heat resistance and strength, and the latter contributes to flexibility and toughness. Among these, polyester elastomers are advantageous in terms of compatibility with other materials.

  Examples of the styrenic elastomer include styrene-butadiene-styrene block copolymer, styrene-isoprene-styrene block copolymer, styrene-ethylene-butylene-styrene block copolymer, styrene-ethylene-propylene-styrene block copolymer, and the like. As a component constituting the styrene-based elastomer, styrene derivatives such as α-methylstyrene, 3-methylstyrene, 4-propylstyrene, and 4-cyclohexylstyrene can be used in addition to styrene. Specifically, Tufprene, Sorprene T, Asaprene T, Tuftec (above, manufactured by ADEKA), Elastomer AR (made by Aron Kasei), Kraton G, Over Reflex (above, made by Shell Japan), JSR-TR , TSR-SIS, Dynalon (above, manufactured by JSR Corporation), Denka STR (manufactured by Electrochemical Co., Ltd.), Quintac (manufactured by ZEON Corporation), TPE-SB series (manufactured by Sumitomo Chemical Co., Ltd.), Lavalon (Mitsubishi) Chemical Co., Ltd.), Septon, Hybler (above, Kuraray Co., Ltd.), Sumiflex (Sumitomo Bakelite Co., Ltd.), Rheostomer, Actimer (above, Riken Vinyl Kogyo Co., Ltd.) and the like.

  The olefin elastomer is a copolymer of an α-olefin having 2 to 20 carbon atoms such as ethylene, propylene, 1-butene, 1-hexene, 4-methyl-pentene, for example, an ethylene-propylene copolymer (EPR). ), Ethylene-propylene-diene copolymer (EPDM) and the like. The olefin-based elastomer includes dicyclopentadiene, 1,4-hexadiene, cyclooctanediene, methylene norbornene, ethylidene norbornene, butadiene, isoprene, and the like. Examples include coalesced and epoxidized polybutadiene. Examples of the olefin-based elastomer include carboxy-modified NBR obtained by copolymerizing butadiene-acrylonitrile copolymer with methacrylic acid. Further, as the olefin elastomer, ethylene-α-olefin copolymer rubber, ethylene-α-olefin-nonconjugated diene copolymer rubber, propylene-α-olefin copolymer rubber, butene-α-olefin copolymer Rubber etc. are mentioned.

  Specific examples of the olefin elastomer include Miralastoma (Mitsui Petrochemical Co., Ltd.), EXACT (Exxon Chemical Co., Ltd.), ENGAGE (Dow Chemical Co., Ltd.), hydrogenated styrene-butadiene rubber “DYNABON HSBR” (manufactured by JSR Corporation). ), Butadiene-acrylonitrile copolymer “NBR series” (manufactured by JSR Corporation), “XER series” of both end carboxyl group-modified butadiene-acrylonitrile copolymers having a crosslinking point (manufactured by JSR Corporation), polybutadiene Examples thereof include “BF-1000” (manufactured by Nippon Soda Co., Ltd.), which is partially epoxidized epoxidized polybutadiene.

  Urethane elastomers are composed of structural units of a hard segment composed of low molecular (short chain) diol and diisocyanate and a soft segment composed of high molecular (long chain) diol and diisocyanate. Examples of the polymer (long chain) diol include polypropylene glycol, polytetramethylene oxide, poly (1,4-butylene adipate), poly (ethylene-1,4-butylene adipate), polycaprolactone, and poly (1,6-hexene). Xylene carbonate), poly (1,6-hexylene-neopentylene adipate) and the like. The number average molecular weight of the polymer (long chain) diol is preferably 500 to 10,000. Examples of the low molecular (short chain) diol include ethylene glycol, propylene glycol, 1,4-butanediol, and bisphenol A. The number average molecular weight of the short-chain diol is preferably 48 to 500. Specific examples of the urethane elastomer include PANDEX T-2185, T-2983N (manufactured by Dainippon Ink & Chemicals, Inc.), sylactolan E790, and the like.

  The polyester elastomer is obtained by polycondensation of a dicarboxylic acid or a derivative thereof and a diol compound or a derivative thereof. Specific examples of the dicarboxylic acid include aromatic dicarboxylic acids such as terephthalic acid, isophthalic acid, and naphthalenedicarboxylic acid, and aromatic dicarboxylic acids in which hydrogen atoms of these aromatic rings are substituted with a methyl group, an ethyl group, a phenyl group, and the like, Examples thereof include aliphatic dicarboxylic acids having 2 to 20 carbon atoms such as adipic acid, sebacic acid and dodecanedicarboxylic acid, and alicyclic dicarboxylic acids such as cyclohexanedicarboxylic acid. These compounds can be used alone or in combination of two or more. Specific examples of the diol compound include aliphatic diols such as ethylene glycol, 1,3-propanediol, 1,4-butanediol, 1,6-hexanediol, 1,10-decanediol, and 1,4-cyclohexanediol; Examples include alicyclic diol, bisphenol A, bis- (4-hydroxyphenyl) -methane, bis- (4-hydroxy-3-methylphenyl) -propane, resorcin and the like. These compounds can be used alone or in combination of two or more. In addition, a multiblock copolymer having an aromatic polyester (for example, polybutylene terephthalate) portion as a hard segment component and an aliphatic polyester (for example, polytetramethylene glycol) portion as a soft segment component can be used. Polyester elastomers are available in various grades depending on the types and ratios of hard segments and soft segments, and the difference in molecular weight. Specific examples of polyester elastomers include Hytrel (Du Pont-Toray), Perprene (Toyobo), Espel (Hitachi Chemical Industries), and the like.

  Polyamide elastomers are composed of hard segments made of polyamide and soft segments made of polyether or polyester, and are roughly divided into two types: polyether block amide type and polyether ester block amide type. The Examples of the polyamide include polyamide 6, polyamide 11, and polyamide 12. Examples of the polyether include polyoxyethylene, polyoxypropylene, polytetramethylene glycol and the like. Specific examples of polyamide-based elastomers include UBE polyamide elastomer (manufactured by Ube Industries), Daiamide (manufactured by Daicel Huls), PEBAX (manufactured by Toray Industries, Inc.), Grilon ELY (manufactured by MS Japan), Novamid (manufactured by Mitsubishi Chemical Corporation). ), Glase (Dainippon Ink Chemical Co., Ltd.) and the like.

  Acrylic elastomers are acrylic esters such as ethyl acrylate, butyl acrylate, methoxyethyl acrylate, ethoxyethyl acrylate, monomers having an epoxy group such as glycidyl methacrylate, allyl glycidyl ether, and / or vinyls such as acrylonitrile and ethylene. It is obtained by copolymerizing with a monomer. Examples of the acrylic elastomer include acrylonitrile-butyl acrylate copolymer, acrylonitrile-butyl acrylate-ethyl acrylate copolymer, acrylonitrile-butyl acrylate-glycidyl methacrylate copolymer, and the like.

  Silicone elastomers are mainly composed of organopolysiloxane, and are classified into polydimethylsiloxane, polymethylphenylsiloxane, and polydiphenylsiloxane. Further, a part of organopolysiloxane modified with a vinyl group, an alkoxy group or the like may be used. Specific examples of the silicone elastomer include KE series (manufactured by Shin-Etsu Chemical Co., Ltd.), SE series, CY series, SH series (above, manufactured by Toray Dow Corning Silicone Co., Ltd.) and the like.

  In addition to the above-mentioned elastomer, a rubber-modified epoxy resin can be used. The rubber-modified epoxy resin is, for example, a part or all of the epoxy groups such as the above-mentioned bisphenol F type epoxy resin, bisphenol A type epoxy resin, salicylaldehyde type epoxy resin, phenol novolac type epoxy resin, or cresol novolak type epoxy resin. Is obtained by modification with carboxylic acid-modified butadiene-acrylonitrile rubber, terminal amino-modified silicone rubber or the like.

  Among elastomers, from the viewpoints of shear adhesion and thermal shock resistance, both terminal carboxyl group-modified butadiene-acrylonitrile copolymers, espels having hydroxyl groups which are polyester elastomers (Espel 1612, 1620, manufactured by Hitachi Chemical Co., Ltd.), epoxy Polybutadiene is preferred.

  The content of the elastomer with respect to the total solid mass of the polymerizable composition of the present invention is preferably 0.5% by mass to 30% by mass, more preferably 1% by mass to 10% by mass, and more preferably 3% by mass to 3% by mass. 8% by mass is particularly preferred. When the content is within the preferable range, it is advantageous in that sufficient stability over time can be obtained while other performances are excellent.

[6] Ultraviolet absorber The polymerizable composition of the present invention preferably contains an ultraviolet absorber.

  An ultraviolet absorber is contained in, for example, a resist composition for a solder resist, and a photosensitive layer is formed by coating the resist composition on a semiconductor substrate for a solid-state imaging device having an alignment mark provided on the surface. Next, by forming a solder resist layer by performing exposure and development, the “problem derived from the reflected light from the substrate surface” described later is solved, and the detectability of the alignment mark by the visible light sensor It is possible to more reliably create a solder resist layer that can ensure both of the above.

  When the surface of the substrate on which the photosensitive layer is provided is made of a material having high light reflectivity such as metal, the reflected light from the substrate surface during exposure to the photosensitive layer cannot be ignored, and the cross-sectional shape of the pattern obtained is It tends to become a pulling shape (that is, the rectangular shape of the cross-sectional shape tends to be impaired). On the other hand, if the exposure amount is suppressed in order to reduce the reflected light, in this case, the exposure amount is insufficient and it is difficult to form a pattern having a rectangular cross section.

  However, in the case where the polymerizable composition of the present invention contains the above-described ultraviolet absorber, the exposure amount necessary for obtaining a pattern having a rectangular cross section (hereinafter also referred to as “appropriate exposure amount”) is irradiated. However, when the ultraviolet absorber absorbs the reflected light, it is easy to form a pattern having a rectangular cross section.

The ultraviolet absorber is preferably one that does not have the ability to initiate polymerization of the polymerizable compound by light or heat (that is, it does not correspond to the polymerization initiator). Here, “does not have the ability to initiate polymerization of a polymerizable compound” means that the ultraviolet absorber substantially initiates polymerization of the polymerizable compound even when it receives light or heat energy. This means that no active species are generated.
More specifically, the ultraviolet absorber has no photosensitivity to ultraviolet rays or visible light (more specifically, light having a wavelength of 300 to 450 nm), and heat (more specifically, For example, those having no heat sensitivity to heat of 150 ° C. to 250 ° C. are preferable. Here, “photosensitivity” and “thermosensitivity” mean that an intended function is exhibited with a change in chemical structure by ultraviolet rays, visible light, or heat.

  Further, it is preferable that the ultraviolet absorber not only does not have the ability to initiate polymerization of the polymerizable compound but also does not have the characteristics of a sensitizer described later. Here, the characteristic of a sensitizer refers to a characteristic that initiates polymerization by passing energy obtained by absorbing light itself to another substance (polymerization initiator).

  In particular, the ultraviolet absorber preferably has a maximum absorption wavelength between 300 nm and 430 nm, and particularly preferably has a maximum absorption wavelength between 330 nm and 420 nm.

  The ultraviolet absorber is more preferably in any one of (I) a wavelength range of 340 nm to 380 nm, (II) a wavelength range of 380 nm to 420 nm, and (III) a wavelength range of 420 nm to 450 nm. It is preferable to have a maximum absorption wavelength.

When a light source for exposure contains i rays when the photosensitive layer formed by the polymerizable composition of the present invention is exposed to light and developed to form a pattern, the ultraviolet absorber is in the above wavelength range ( I) preferably has a maximum absorption wavelength.
When the exposure light source contains h-rays, the ultraviolet absorber preferably has a maximum absorption wavelength in the wavelength range (II).
When the exposure light source contains g-rays, the ultraviolet absorber preferably has a maximum absorption wavelength in the wavelength range (III).

  As the UV absorber, UV absorbers such as salicylate, benzophenone, benzotriazole, substituted acrylonitrile, and triazine can be used.

  Examples of salicylate-based UV absorbers include phenyl salicylate, p-octylphenyl salicylate, pt-butylphenyl salicylate, and the like. Examples of benzophenone-based UV absorbers include 2,2′-dihydroxy-4- Methoxybenzophenone, 2,2′-dihydroxy-4,4′-dimethoxybenzophenone, 2,2 ′, 4,4′-tetrahydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2,4-dihydroxybenzophenone, 2- And hydroxy-4-octoxybenzophenone. Examples of the benzotriazole ultraviolet absorber include 2- (2′-hydroxy-3 ′, 5′-di-tert-butylphenyl) -5-chlorobenzotriazole, 2- (2′-hydroxy-3). '-Tert-butyl-5'-methylphenyl) -5-chlorobenzotriazole, 2- (2'-hydroxy-3'-tert-amyl-5'-isobutylphenyl) -5-chlorobenzotriazole, 2- ( 2'-hydroxy-3'-isobutyl-5'-methylphenyl) -5-chlorobenzotriazole, 2- (2'-hydroxy-3'-isobutyl-5'-propylphenyl) -5-chlorobenzotriazole, 2 -(2'-hydroxy-3 ', 5'-di-tert-butylphenyl) benzotriazole, 2- (2'-hydroxy-5' Methylphenyl) benzotriazole, 2- [2'-hydroxy-5 '- (1,1,3,3-tetramethylbutyl) phenyl] benzotriazole and the like.

  Examples of the substituted acrylonitrile-based ultraviolet absorber include ethyl 2-cyano-3,3-diphenyl acrylate, 2-ethylhexyl 2-cyano-3,3-diphenyl acrylate, and the like. Furthermore, as an example of the triazine ultraviolet absorber, 2- [4-[(2-hydroxy-3-dodecyloxypropyl) oxy] -2-hydroxyphenyl] -4,6-bis (2,4-dimethylphenyl) ) -1,3,5-triazine, 2- [4-[(2-hydroxy-3-tridecyloxypropyl) oxy] -2-hydroxyphenyl] -4,6-bis (2,4-dimethylphenyl) Mono (hydroxyphenyl) triazine compounds such as 1,3,5-triazine and 2- (2,4-dihydroxyphenyl) -4,6-bis (2,4-dimethylphenyl) -1,3,5-triazine 2,4-bis (2-hydroxy-4-propyloxyphenyl) -6- (2,4-dimethylphenyl) -1,3,5-triazine, 2,4-bis (2-hydroxy-); -Methyl-4-propyloxyphenyl) -6- (4-methylphenyl) -1,3,5-triazine, 2,4-bis (2-hydroxy-3-methyl-4-hexyloxyphenyl) -6 Bis (hydroxyphenyl) triazine compounds such as (2,4-dimethylphenyl) -1,3,5-triazine; 2,4-bis (2-hydroxy-4-butoxyphenyl) -6- (2,4-di Butoxyphenyl) -1,3,5-triazine, 2,4,6-tris (2-hydroxy-4-octyloxyphenyl) -1,3,5-triazine, 2,4,6-tris [2-hydroxy And tris (hydroxyphenyl) triazine compounds such as -4- (3-butoxy-2-hydroxypropyloxy) phenyl] -1,3,5-triazine.

  The ultraviolet absorber is preferably a compound represented by the following general formula (A).

In the formula, each of R ₆₁ and R ₆₂ independently represents a hydrogen atom, an alkyl group, an aryl group, or a group of nonmetallic atoms necessary to form a 5- or 6-membered ring by connecting to each other. In addition, either R ₆₁ or R ₆₂ may be bonded to a methine group adjacent to the nitrogen atom to form a 5- or 6-membered ring. X ₆₁ and Y ₆₁ are each independently a cyano group, —COOR ₆₃ , —CONR ₆₃ R ₆₄ , —COR ₆₃ , —SO ₂ R ₆₃ , or —SO ₂ R ₆₃ R ₆₄ , and R ₆₃ and R ₆₄ Each independently represents a hydrogen atom, an alkyl group or an aryl group. X ₆₁ and Y ₆₁ may be connected to each other to form a 5- or 6-membered ring. _Further, any one of R _61, R 62, _{X 61} and _{Y 61} is bonded with one of _{R 61, R 62, X} 61 and _{Y 61} in another compound represented by formula (A) A dimer may be formed.
Hereinafter, although the specific example of a compound represented by general formula (A) is shown, it is not limited to this.

In the present invention, the various ultraviolet absorbers may be used alone or in combination of two or more.
The polymerizable composition of the present invention may or may not contain an ultraviolet absorber, but when it is contained, the content of the ultraviolet absorber is 0 with respect to the total solid mass of the polymerizable composition of the present invention. It is preferably 0.001% by mass or more and 1% by mass or less, and more preferably 0.01% by mass or more and 0.3% by mass or less.

[6] Infrared shielding material other than tungsten compound The polymerizable composition of the present invention is an infrared shielding material other than a tungsten compound (hereinafter also referred to as “other infrared shielding material”) as long as the effects of the present invention are not impaired. You may contain. The other infrared shielding material is a compound having absorption at a wavelength of 800 to 1200 nm, and preferably has good transparency of light used for exposure. From such a viewpoint, the other infrared shielding material is It is preferably selected from infrared absorbing dyes and infrared absorbing inorganic pigments.
Examples of infrared absorbing dyes include metal complex dyes such as cyanine dyes, phthalocyanine dyes, naphthalocyanine dyes, immonium dyes, aminoum dyes, quinolium dyes, pyrylium dyes, and Ni complex dyes.
The pigment | dye which can be used as an infrared shielding material is also available as a commercial item, for example, the following commercial pigment | dyes are mentioned suitably.
F0 Chemicals S0345, S0389, S0450, S0253, S0322, S0585, S0402, S0337, S0391, S0094, S0325, S0260, S0229, S0447, S0378, S0306, S0484
American Dye Source, Inc. Ltd. ADS795WS, ADS805WS, ADS819WS, ADS820WS, ADS823WS, ADS830WS, ADS850WS, ADS845MC, ADS870MC, ADS880MC, ADS890MC, ADS920MC, ADS990MC, ADS805PI, ADSW805PP, ADS810CO, ADS813MT, ADS815EI, ADS816EI, ADS818HT, ADS819MT, ADS819MT, ADS821NH, ADS822MT, ADS838MT , ADS840MT, ADS905AM, ADS956BP, ADS1040P, ADS1040T, ADS1045P, ADS1040P, ADS1050P, ADS1065A, ADS1065P, ADS1100T, ADS1120 F

YKR-4010, YKR-3030, YKR-3070, MIR-327, MIR-371, SIR-159, PA-1005, MIR-369, MIR-379, SIR-128, PA-1006, YKR, manufactured by Yamamoto Kasei Co., Ltd. -2080, MIR-370, YKR-3040, YKR-3081, SIR-130, MIR-362, YKR-3080, SIR-132, PA-1001
NK-123, NK-124, NK-1144, NK-2204, NK-2268, NK-3027, NKX-113, NKX-1199, NK-2674, NK-3508, NKX-114, manufactured by Hayashibara Biochemical Research Institute NK-2545, NK-3555, NK-3509, NK-3519

Among these dyes, phthalocyanine dyes and metal complex dyes are preferable from the viewpoint of heat resistance.
These dyes may be used alone, but for the purpose of expressing good light-shielding properties at wavelengths of 800 to 1200 nm, two or more of these dyes may be used in combination.

Examples of infrared absorbing inorganic pigments that can be used as other infrared shielding materials include zinc white, lead white, lithopone, titanium oxide, chromium oxide, iron oxide, precipitated barium sulfate and barite powder, red lead, iron oxide red , Yellow lead, zinc yellow (1 type of zinc yellow, 2 types of zinc yellow), ultramarine blue, prussian blue (potassium ferrocyanide), zircon gray, praseodymium yellow, chrome titanium yellow, chrome green, peacock, victoria green, Examples include bitumen (unrelated to Prussian blue), vanadium zirconium blue, chrome tin pink, ceramic red, salmon pink, etc., and black pigments such as Co, Cr, Cu, Mn, Ru, Fe, Ni, Sn, Ti And a metal oxide, metal nitride or a metal oxide containing one or more metal elements selected from the group consisting of Ag and Ag It can be used such as a mixture of.
As the black pigment, titanium black, which is a black pigment containing titanium nitride, is preferable because it has good shielding properties in the infrared region with a wavelength of 800 to 1200 nm.
Titanium black can be obtained by a known method, and as commercially available products, for example, Ishihara Sangyo Co., Ltd., Ako Kasei Co., Ltd., Gemco Co., Ltd., Mitsubishi Materials Corporation, and Mitsubishi Materials You may use the titanium black by an electronic chemical company.

Titanium black refers to black particles having titanium atoms. Preferred are low-order titanium oxide and titanium oxynitride. As the titanium black particles, particles whose surfaces are modified may be used as necessary for the purpose of improving dispersibility and suppressing aggregation.
Examples of the surface modification method include a method of coating the surface with one or more selected from silicon oxide, titanium oxide, germanium oxide, aluminum oxide, magnesium oxide, and zirconium oxide. You may surface-treat with a water-repellent substance as shown in the paragraph numbers [0010] to [0027] of the publication.

  Titanium black is produced by heating a mixture of titanium dioxide and metal titanium in a reducing atmosphere (Japanese Patent Laid-Open No. 49-5432), ultrafine dioxide obtained by high-temperature hydrolysis of titanium tetrachloride. A method of reducing titanium in a reducing atmosphere containing hydrogen (Japanese Patent Laid-Open No. 57-205322), a method of reducing titanium dioxide or titanium hydroxide at a high temperature in the presence of ammonia (Japanese Patent Laid-Open No. 60-65069, No. 61-201610), a method in which a vanadium compound is attached to titanium dioxide or titanium hydroxide and reduced at high temperature in the presence of ammonia (Japanese Patent Laid-Open No. 61-201610). It is not a thing.

The particle size of the titanium black particles is not particularly limited, but is preferably 3 to 2000 nm, more preferably 10 to 500 nm from the viewpoint of dispersibility and colorability.
The specific surface area of titanium black is not particularly limited, but the water repellency after surface treatment of such titanium black with a water repellent becomes a predetermined performance. ² / g approximately, and preferably from 20 to 100 m ² / g approximately.

  As for the particle size of the inorganic pigment used as the other infrared shielding material, the average particle size is preferably 3 nm to 0.01 mm, and the average particle size is from 10 nm to 10 nm from the viewpoint of dispersibility, light shielding property, and sedimentation with time It is preferable that it is 1 micrometer.

  The polymerizable composition may or may not contain other infrared shielding material, but when it is contained, the content of the other infrared shielding material is 5% by mass or more and 75% by mass with respect to the mass of the tungsten compound. It is preferably at most 10 mass%, more preferably at least 10 mass% and at most 40 mass%.

[7] Dispersant In the present invention, when the tungsten compound is particularly tungsten fine particles, the tungsten compound is dispersed with a known dispersant for the purpose of improving dispersibility and dispersion stability in the polymerizable composition. May be.
As the dispersant, for example, a known dispersant or surfactant can be appropriately selected and used.

Specifically, many types of compounds can be used. For example, organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (meth) acrylic acid (co) polymer polyflow No. 75, no. 90, no. Cationic surfactants such as 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusho Co., Ltd.); polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl Nonionic surfactants such as phenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, and sorbitan fatty acid ester; anionic interfaces such as W004, W005, and W017 (manufactured by Yusho Co., Ltd.) Activator: EFKA-46, EFKA-47, EFKA-47EA, EFKA polymer 100, EFKA polymer 400, EFKA polymer 401, EFKA polymer 450 (all manufactured by BASF Japan); Solsperse 3 Various Solsperse dispersants (manufactured by Nippon Lubrizol Co., Ltd.) such as 00, 5000, 9000, 12000, 13240, 13940, 17000, 24000, 26000, 28000, 32000, 36000; Adeka Pluronic L31, F38, L42, L44, L61 , L64, F68, L72, P95, F77, P84, F87, P94, L101, P103, F108, L121, P-123 (manufactured by ADEKA Corporation) and Isonet S-20 (manufactured by Sanyo Kasei Co., Ltd.), Disperbyk 101, 103, 106, 108, 109, 111, 112, 116, 130, 140, 142, 162, 163, 164, 166, 167, 170, 171, 174, 176, 180, 182, 2000, 2001, 2050, 2150 ( Kkukemi Co., Ltd.) and the like. In addition, an oligomer or polymer having a polar group at the molecular end or side chain, such as an acrylic copolymer, may be mentioned.
From the viewpoints of dispersibility, developability and sedimentation, the following resins described in JP-A 2010-106268 are preferred, and in particular, from the viewpoint of dispersibility, polymer dispersion having a polyester chain in the side chain An agent is preferable, and a resin having an acid group and a polyester chain is preferable from the viewpoint of dispersibility and resolution of a pattern formed by a photolithography method. As a preferable acid group in the dispersant, an acid group having a pKa of 6 or less is preferable from the viewpoint of adsorptivity, and carboxylic acid, sulfonic acid, and phosphoric acid are particularly preferable.

The dispersion resin described in JP 2010-106268 A that is preferably used in the present invention will be described below.
A preferable dispersion resin is a graft copolymer having a graft chain selected from a polyester structure, a polyether structure, and a polyacrylate structure, in which the number of atoms excluding hydrogen atoms is in the range of 40 to 10,000 in the molecule. A graft copolymer containing a structural unit represented by any one of the following formulas (1) to (5).

[In Formula (1) to Formula (5), X ¹ , X ² , X ³ , X ⁴ , X ⁵ , and X ⁶ each independently represent a hydrogen atom or a monovalent organic group. From the viewpoint of synthesis restrictions, a hydrogen atom or an alkyl group having 1 to 12 carbon atoms is preferable, a hydrogen atom or a methyl group is more preferable, and a methyl group is particularly preferable.
In the formula (3) or (4), R ′ represents a branched or straight chain alkylene group (the number of carbon atoms is preferably 1 to 10, more preferably 2 or 3, and in the formula (3), , —CH ₂ —CH (CH ₃ ) — is preferably a group represented by —CH (CH ₃ ) —CH ₂ — in the formula (4).
In the formulas (1) to (5), Y ¹ , Y ² , Y ³ , Y ⁴ , and Y ⁵ are each independently a divalent linking group and are not particularly limited in structure. Specific examples include the following (Y-1) to (Y-20) linking groups. In the following structures, A and B each represent a bond with the left terminal group and the right terminal group in Formulas (1) to (5). Of the structures shown below, (Y-2) and (Y-13) are more preferable from the viewpoint of ease of synthesis.

In Formula (1) to Formula (5), Z ¹ , Z ² , Z ³ , Z ⁴ , and Z ⁵ each independently represent a hydrogen atom or a monovalent substituent, and the structure of the substituent is particularly limited. Specific examples include an alkyl group, a hydroxyl group, an alkoxy group, an aryloxy group, a heteroaryloxy group, an alkylthioether group, an arylthioether group, a heteroarylthioether group, and an amino group. Among these, from the viewpoint of improving dispersibility in particular, it is preferable to have a steric repulsion effect, and an alkyl group having 5 to 24 carbon atoms is preferable. The cyclic alkyl group is preferable.
In Formula (1)-Formula (5), n, m, p, q, and r are integers of 1 to 500, respectively.
In Formula (1) and Formula (2), j and k each independently represent an integer of 2 to 8. J and k in Formula (1) and Formula (2) are preferably integers of 4 to 6, and most preferably 5, from the viewpoints of dispersion stability and developability.

In formula (5), R represents a hydrogen atom or a monovalent organic group and is not particularly limited in terms of structure, but is preferably a hydrogen atom, an alkyl group, an aryl group, or a heteroaryl group, more preferably a hydrogen atom. An atom or an alkyl group. When R is an alkyl group, the alkyl group is preferably a linear alkyl group having 1 to 20 carbon atoms, a branched alkyl group having 3 to 20 carbon atoms, or a cyclic alkyl group having 5 to 20 carbon atoms. A linear alkyl group having 1 to 20 carbon atoms is more preferable, and a linear alkyl group having 1 to 6 carbon atoms is particularly preferable.
Moreover, as R in Formula (5), two or more types of R having different structures may be mixed and used in the specific resin.

The structural unit represented by the formula (1) is more preferably a structural unit represented by the following formula (1A) from the viewpoint of dispersion stability and developability.
The structural unit represented by the formula (2) is more preferably a structural unit represented by the following formula (2A) from the viewpoint of dispersion stability and developability.

Wherein ^(1A), X ^1, Y 1, ^{Z 1} and n are as defined ^{X 1,} Y 1, ^{Z 1} and n in Formula (1), and preferred ranges are also the same.
Wherein ^(2A), X ^2, Y 2, ^{Z 2} and m are as defined ^{X 2,} Y 2, ^{Z 2} and m in the formula (2), and preferred ranges are also the same.
Especially, the compound which has a polyester chain in a side chain shown by the said Formula (1) is preferable. As typical examples of these, Exemplified Compound 1 to Exemplified Compound 71 described in Paragraph Nos. [0046] to [0078] of JP-A-2010-106268 can be preferably used as a dispersant in the present invention.
In addition, although the exemplary compound 1-the exemplary compound 50 are described below as a suitable dispersing agent for this invention, this invention is not restrict | limited to these. In the following exemplary compounds, the numerical value written together with each structural unit (the numerical value written together with the main chain repeating unit) represents the content of the structural unit [mass%: described as (wt%)]. The numerical value written together with the repeating part of the side chain indicates the number of repetitions of the repeating part.

From the viewpoint of dispersibility, developability, and sedimentation, the dispersant is preferably a resin having a polyester chain in the side chain, and from the viewpoint of dispersibility and resolution, a resin having an acid group is more preferable. As a preferable acid group, an acid group having a pKa of 6 or less is preferable from the viewpoint of adsorptivity, and an acid group derived from carboxylic acid, sulfonic acid, or phosphoric acid is particularly preferable.
Most preferably, from the viewpoints of solubility in a dispersion solution, dispersibility, and developability, a resin in which the polyester chain is a polycaprolactone side chain and has a carboxylic acid group is preferable.

  In addition, amphoteric dispersants such as Hinoact T-8000E manufactured by Kawaken Fine Chemical Co., Ltd. can also be used as the dispersant.

In the case of using a dispersant, first, a dispersion composition is prepared using a tungsten compound (and other infrared shielding materials as described above), a dispersant, and an appropriate solvent, and then blended into the polymerizable composition. Is preferable from the viewpoint of improving dispersibility.
The polymerization composition may or may not contain a dispersant, but when it is contained, the content of the dispersant in the dispersion composition is based on the total solid mass of the tungsten compound in the dispersion composition. Or, when other infrared shielding material is used and an infrared absorbing inorganic pigment is used as the other infrared shielding material, the total solid mass of the tungsten compound and the infrared absorbing inorganic pigment 1 mass%-90 mass% is preferable with respect to the sum, and 3 mass%-70 mass% is more preferable.

[8] Sensitizer The polymerizable composition of the present invention preferably contains a sensitizer for the purpose of improving the radical generation efficiency of the polymerization initiator and increasing the photosensitive wavelength. As the sensitizer that can be used in the present invention, those that sensitize the above-mentioned photopolymerization initiator by an electron transfer mechanism or an energy transfer mechanism are preferable. Examples of the sensitizer that can be used in the present invention include those belonging to the compounds listed below and having an absorption wavelength in the wavelength region of 300 nm to 450 nm.

Examples of preferred sensitizers include those belonging to the following compounds and having an absorption wavelength in the wavelength range from 330 nm to 450 nm.
For example, polynuclear aromatic compounds (for example, phenanthrene, anthracene, pyrene, perylene, triphenylene, 9,10-dialkoxyanthracene), xanthene compounds (for example, fluorescein, eosin, erythrosine, rhodamine B, rose bengal), Thioxanthone compounds (isopropylthioxanthone, diethylthioxanthone, chlorothioxanthone), acridone compounds (eg, acridone, chloroacridone, N-methylacridone, N-butylacridone, 10-n-butyl-2-chloroacridone), Cyanine compounds (eg, thiacarbocyanine, oxacarbocyanine), merocyanine compounds (eg, merocyanine, carbomerocyanine), phthalocyanine compounds, thiazine compounds (eg, Thionine, methylene blue, toluidine blue), acridine compounds (for example, acridine orange, chloroflavin, acriflavine), anthraquinone compounds (for example, anthraquinone), squalium compounds (for example, squalium), acridine orange, coumarin compounds (for example, , Coumarin, 7-diethylamino-4-methylcoumarin), ketocoumarin, phenothiazine compound, phenazine compound, styrylbenzene compound, azo compound, diphenylmethane, triphenylmethane, distyrylbenzene compound, carbazole compound, porphyrin, spiro Compound, quinacridone, indigo, styryl, pyrylium compound, pyromethene compound, pyrazolotriazole compound, benzothiazole compound, barbitu Acid derivatives, thiobarbituric acid derivatives, acetophenone, benzophenone, thioxanthone, aromatic ketone compounds such as Michler's ketone, and heterocyclic compounds such as N- aryl oxazolidinone and the like.
Further, European Patent No. 568,993, US Pat. No. 4,508,811, No. 5,227,227, JP-A-2001-125255, JP-A-11-271969, etc. And the like.
Among them, the sensitizer is preferably at least one selected from the group consisting of a thioxanthone compound, an acridone compound, and a coumarin compound, and a thioxanthone compound is particularly preferable. High sensitivity can be more reliably obtained by combining these sensitizers with the polymerization initiator.
The polymerizable composition may or may not contain a sensitizer, but when it is contained, the content of the sensitizer is 0.01 mass relative to the total solid content mass of the polymerizable composition of the present invention. % To 10% by mass, more preferably 0.1% to 2% by mass.

[9] Crosslinking agent The polymerizable composition of the present invention may further contain a crosslinking agent for the purpose of improving the strength of the permanent pattern.
The crosslinking agent is not particularly limited as long as it is a compound having a crosslinkable group, and such a compound preferably has two or more crosslinkable groups. As specific examples of the crosslinkable group, oxetane group, cyanate group, and the same groups as those mentioned for the crosslinkable group which the alkali-soluble binder may have can be suitably exemplified. , An oxetane group or a cyanate group. That is, the crosslinking agent is particularly preferably an epoxy compound, an oxetane compound or a cyanate compound.
Examples of the epoxy compound that can be suitably used as a crosslinking agent in the present invention include an epoxy compound having at least two oxirane groups in one molecule and an epoxy compound having at least two epoxy groups having an alkyl group at the β-position in one molecule. Compound etc. are mentioned.

  Examples of the epoxy compound having at least two oxirane groups in one molecule include a bixylenol type or biphenol type epoxy compound (“YX4000 Japan Epoxy Resin” etc.) or a mixture thereof, a complex having an isocyanurate skeleton, etc. Cyclic epoxy compounds (“TEPIC; manufactured by Nissan Chemical Industries, Ltd.”, “Araldite PT810; manufactured by BASF Japan”, etc.), bisphenol A type epoxy compounds, novolac type epoxy compounds, bisphenol F type epoxy compounds, hydrogenated bisphenol A types Epoxy compounds, bisphenol S type epoxy compounds, phenol novolak type epoxy compounds, cresol novolak type epoxy compounds, halogenated epoxy compounds (for example, low brominated epoxy compounds, high halogenated epoxy compounds) Compound, brominated phenol novolac type epoxy compound, etc.), allyl group-containing bisphenol A type epoxy compound, trisphenol methane type epoxy compound, diphenyldimethanol type epoxy compound, phenol biphenylene type epoxy compound, dicyclopentadiene type epoxy compound (" HP-7200, HP-7200H; manufactured by Dainippon Ink Chemical Co., Ltd. "), glycidylamine type epoxy compounds (diaminodiphenylmethane type epoxy compounds, diglycidylaniline, triglycidylaminophenol, etc.), glycidyl ester type epoxy compounds ( Phthalic acid diglycidyl ester, adipic acid diglycidyl ester, hexahydrophthalic acid diglycidyl ester, dimer acid diglycidyl ester, etc.) Hydantoin type epoxy Shi compound, alicyclic epoxy compound (3,4-epoxycyclohexylmethyl-3 ', 4'-epoxycyclohexane carboxylate,

Bis (3,4-epoxycyclohexylmethyl) adipate, dicyclopentadiene diepoxide, “GT-300, GT-400, ZEHPE3150; manufactured by Daicel Chemical Industries, Ltd.”), imide type alicyclic epoxy compound, trihydroxy Phenylmethane type epoxy compound, bisphenol A novolak type epoxy compound, tetraphenylol ethane type epoxy compound, glycidyl phthalate compound, tetraglycidyl xylenoyl ethane compound, naphthalene group-containing epoxy compound (naphthol aralkyl type epoxy compound, naphthol novolak type epoxy compound) Tetrafunctional naphthalene type epoxy compounds, commercially available products are “ESN-190, ESN-360; manufactured by Nippon Steel Chemical Co., Ltd.”, “HP-4032, EXA-4750, EXA-”. 700; manufactured by Dainippon Ink and Chemicals, Inc.), a reaction product of a polyphenol compound obtained by addition reaction of a phenol compound with a diolefin compound such as divinylbenzene or dicyclopentadiene, and epichlorohydrin, 4-vinylcyclohexene- 1-oxide ring-opened polymer epoxidized with peracetic acid, etc., epoxy compound having linear phosphorus-containing structure, epoxy compound having cyclic phosphorus-containing structure, α-methylstilbene type liquid crystal epoxy compound, dibenzoyloxybenzene Type liquid crystal epoxy compound, azophenyl type liquid crystal epoxy compound, azomethine phenyl type liquid crystal epoxy compound, binaphthyl type liquid crystal epoxy compound, azine type epoxy compound, glycidyl methacrylate copolymer epoxy compound (“CP-50S, CP-50M; "Nippon Yushi Co., Ltd."), copolymerized epoxy compounds of cyclohexylmaleimide and glycidyl methacrylate, bis (glycidyloxyphenyl) fluorene type epoxy compounds, bis (glycidyloxyphenyl) adamantane type epoxy compounds, and the like. It is not limited to. These epoxy resins may be used individually by 1 type, and may use 2 or more types together.

In addition to the epoxy compound having at least two oxirane groups in one molecule, an epoxy compound containing at least two epoxy groups having an alkyl group at the β-position can be used, and the β-position is an alkyl group. Particularly preferred is a compound containing an epoxy group substituted with a (specifically, a β-alkyl-substituted glycidyl group or the like).
In the epoxy compound containing at least an epoxy group having an alkyl group at the β-position, all of two or more epoxy groups contained in one molecule may be a β-alkyl-substituted glycidyl group, and at least one epoxy group May be a β-alkyl-substituted glycidyl group.

Examples of the oxetane compound include oxetane resins having at least two oxetanyl groups in one molecule.
Specifically, for example, bis [(3-methyl-3-oxetanylmethoxy) methyl] ether, bis [(3-ethyl-3-oxetanylmethoxy) methyl] ether, 1,4-bis [(3-methyl- 3-Oxetanylmethoxy) methyl] benzene, 1,4-bis [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, (3-methyl-3-oxetanyl) methyl acrylate, (3-ethyl-3-oxetanyl) In addition to polyfunctional oxetanes such as methyl acrylate, (3-methyl-3-oxetanyl) methyl methacrylate, (3-ethyl-3-oxetanyl) methyl methacrylate or oligomers or copolymers thereof, compounds having an oxetane group; Novolac resin, poly (p-hydroxystyrene), cardo type bisphenol , Calixarenes, calixresorcinarenes, ether compounds such as silsesquioxanes and the like, and other compounds having an oxetane ring and alkyl (meth) acrylate A polymer etc. are also mentioned.
Examples of the bismaleimide compound include 4,4′-diphenylmethane bismaleimide, bis- (3-ethyl-5-methyl-4-maleimidophenyl) methane, and 2,2′-bis- [4- (4-maleimide). Phenoxy) phenyl] propane, and the like.

  Examples of the cyanate compound include a bis A type cyanate compound, a bis F type cyanate compound, a cresol novolac type cyanate compound, and a phenol novolac type cyanate compound.

  The polymerizable composition may or may not contain a crosslinking agent, but when it is contained, the content of the crosslinking agent is 1% by mass or more and 40% by mass with respect to the total solid content of the polymerizable composition of the present invention. % Or less, and more preferably 3% by mass or more and 20% by mass or less.

[10] Curing accelerator The polymerizable composition of the present invention may further contain a curing accelerator for the purpose of accelerating the thermal curing of the crosslinking agent such as the epoxy compound or the oxetane compound.
Examples of the curing accelerator include amine compounds (for example, dicyandiamide, benzyldimethylamine, 4- (dimethylamino) -N, N-dimethylbenzylamine, 4-methoxy-N, N-dimethylbenzylamine, 4-methyl- N, N-dimethylbenzylamine, etc.), quaternary ammonium salt compounds (eg, triethylbenzylammonium chloride, etc.), blocked isocyanate compounds (eg, dimethylamine, etc.), imidazole derivative bicyclic amidine compounds and salts thereof (eg, imidazole) 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1-cyanoethyl-2-phenylimidazole, 1- (2-cyanoethyl) -2-ethyl 4-methylimidazole, etc.), phosphorus compounds (eg, triphenylphosphine, etc.), guanamine compounds (eg, melamine, guanamine, acetoguanamine, benzoguanamine, etc.), S-triazine derivatives (eg, 2,4-diamino-6-methacryloyl) Oxyethyl-S-triazine, 2-vinyl-2,4-diamino-S-triazine, 2-vinyl-4,6-diamino-S-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxy Ethyl-S-triazine / isocyanuric acid adduct, etc.) can be used. The curing accelerator is preferably melamine or dicyandiamide.
A hardening accelerator may be used individually by 1 type, and may use 2 or more types together.
The polymerizable composition may or may not contain a curing accelerator, but when it is contained, the content of the curing accelerator with respect to the total solid content of the polymerizable composition is usually 0.01 to 15% by mass. It is.

[11] Inorganic filler The polymerizable composition of the present invention may further contain an inorganic filler. As the inorganic filler that can be used in the present invention, silica is preferable, and spherical silica surface-treated with a silane coupling agent is particularly preferable.
When the polymerizable composition of the present invention contains a filler, it is preferable in that a highly durable pattern is obtained (especially when the wiring density of the metal wiring covered with the solder resist is high, more than the solder resist). The above effect is remarkable when severe durability is required).
By using spherical silica surface-treated with a silane coupling agent, the thermal cycle test resistance and storage stability of the polymerizable composition are improved. It becomes possible to maintain the same good shape as immediately after.

The “spherical” in the spherical filler is not necessarily a needle shape, a columnar shape, or an indeterminate shape, but may be rounded, and is not necessarily “true spherical”. As the form of "", "spherical" is mentioned.
It can be confirmed that the filler is spherical by observing with a scanning electron microscope (SEM).

There is no restriction | limiting in particular in the volume average particle diameter of the primary particle of the said inorganic filler, Although it can select suitably according to the objective, 0.05 micrometer-3 micrometers are preferable and 0.1 micrometer-1 micrometer are more preferable. When the volume average particle size of the primary particles of the filler is in the above range, the deterioration of workability due to the expression of thixotropic properties is suppressed, and the maximum particle size is not increased, so that foreign matter adheres to the obtained cured film. And the occurrence of defects due to non-uniformity of the coating film is suppressed, which is advantageous.
The volume average particle diameter of the primary particles of the inorganic filler can be measured by a dynamic light scattering particle diameter distribution measuring apparatus.
The inorganic filler can be dispersed by using the aforementioned dispersant and binder. As described above, an alkali-soluble binder polymer having a crosslinkable group in the side chain is particularly preferable from the viewpoint of curability.

-Surface treatment-
Next, the surface treatment of the inorganic filler will be described. There is no restriction | limiting in particular as surface treatment of an inorganic filler, Although it can select suitably according to the objective, The process which coat | covers a silica with a silane coupling agent is preferable.

-Silane coupling agent-
There is no restriction | limiting in particular as a silane coupling agent used for the surface treatment of an inorganic filler, Although it can select suitably according to the objective, At least 1 sort (s) selected from an alkoxysilyl group, a chlorosilyl group, and an acetoxysilyl group Functional group (hereinafter also referred to as “first functional group”) and at least one functional group selected from (meth) acryloyl group, amino group and epoxy group (hereinafter also referred to as “second functional group”). The second functional group is more preferably a (meth) acryloyl group or an amino group, the second functional group is more preferably a (meth) acryloyl group, and the second functional group is a (meth) acryloyl group. If it exists, it is advantageous in terms of storage stability and TCT resistance.

  Further, as described in JP-B-7-68256, the first functional group is at least one selected from an alkoxysilyl group, a chlorosilyl group, and an acetoxysilyl group, and the second functional group is an imidazole group or an alkyl group. Those having at least one selected from an imidazole group and a vinylimidazole group can also be preferably used.

  The silane coupling agent is not particularly limited. For example, γ-aminopropyltriethoxysilane, N- (β-aminoethyl) -γ-aminopropyltrimethoxysilane, N- (β-aminoethyl)- γ-aminopropylmethyldimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, JP 7- [Alpha]-[[3- (trimethoxysilyl) propoxy] methyl] -imidazole-1-ethanol, 2-ethyl-4-methyl- [alpha]-[[3- (trimethoxysilyl) propoxy] described in Japanese Patent No. 68256 Methyl] -imidazole-1-ethanol, 4-vinyl-α-[[3 (Trimethoxysilyl) propoxy] methyl] - imidazole-1-ethanol, 2-ethyl-4-methyl-imidazo-trimethoxysilane, and their salts, intramolecular condensates, intermolecular condensates, and the like preferably. These may be used individually by 1 type and may be used in combination of 2 or more types.

The surface treatment of the spherical silica with the silane coupling agent may be performed only on the spherical silica in advance (this case is hereinafter also referred to as “pretreatment”), or other components included in the polymerizable composition. You may carry out together with a part or all of the filler.
The method for performing the pretreatment is not particularly limited, and examples thereof include a dry method, an aqueous solution method, an organic solvent method, and a spray method. The temperature at which the pretreatment is performed is not particularly limited, but is preferably from room temperature to 200 ° C.
It is also preferable to add a catalyst during the pretreatment. There is no restriction | limiting in particular as this catalyst, For example, an acid, a base, a metal compound, an organometallic compound etc. are mentioned.

  The amount of the silane coupling agent added in the pretreatment is not particularly limited, but is preferably in the range of 0.01 to 50 parts by mass with respect to 100 parts by mass of spherical silica, and 0.05 to The range of 50 parts by mass is more preferable. When the addition amount is in the above range, a surface treatment sufficient to exhibit the effect is performed, and a decrease in handleability due to aggregation of spherical silica after the treatment is suppressed.

  In the silane coupling agent, the first functional group reacts with the substrate surface, the spherical silica surface, and the active group of the binder, and the second functional group further includes a carboxyl group and an ethylenically unsaturated group of the binder. Therefore, it has the effect of improving the adhesion between the substrate and the photosensitive layer. On the other hand, since the silane coupling agent is highly reactive, when it is added to the polymerizable composition, the second functional group mainly reacts or deactivates during storage due to the diffusion action, Shelf life and pot life may be shortened.

However, as described above, if the spherical silica pretreated with a silane coupling agent is used, the diffusion effect is suppressed, so that the shelf life and pot life problems are greatly improved. It is also possible to do. Furthermore, when pre-treating spherical silica, conditions such as stirring conditions, temperature conditions, and use of a catalyst can be freely selected, so that the silane coupling agent is compared with the case of adding without pre-treatment. The reaction rate between the first functional group and the active group in the spherical silica can be significantly increased. Therefore, very good results can be obtained particularly in severe required characteristics such as electroless gold plating, electroless solder plating, and moisture resistance load test. Moreover, the amount of the silane coupling agent used can be reduced by performing the pretreatment, and the shelf life and pot life can be further improved.
Examples of spherical silica surface-treated with a silane coupling agent that can be used in the present invention include, for example, Electrochemical Industry: FB, SFP series, Tatsumori: 1-FX, Toa Gosei: HSP series, Fuso Chemical Industries: SP series etc. are mentioned.

  There is no restriction | limiting in particular in content of the inorganic filler with respect to the total solid content mass of polymeric composition, Although it can select suitably according to the objective, 1 mass%-60 mass% are preferable. When the addition amount is in the above range, a sufficient decrease in the coefficient of linear expansion is achieved, and embrittlement of the formed cured film is suppressed, and the function as a wiring protective film when a wiring is formed using a permanent pattern Is fully expressed.

[12] Surfactant To the polymerizable composition of the present invention, various surfactants may be added from the viewpoint of further improving the coatability. As the surfactant, various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a silicone-based surfactant can be used.

In particular, since the polymerizable composition of the present invention contains a fluorosurfactant, liquid properties (particularly fluidity) when prepared as a coating liquid are further improved. Liquid-saving property can be further improved.
That is, in the case of forming a film using a coating liquid to which a polymerizable composition containing a fluorosurfactant is applied, by reducing the interfacial tension between the coated surface and the coating liquid, The wettability is improved and the coating property to the coated surface is improved. For this reason, even when a thin film of about several μm is formed with a small amount of liquid, it is effective in that it is possible to more suitably form a film having a uniform thickness with small thickness unevenness.

  The fluorine content in the fluorosurfactant is preferably 3% by mass to 40% by mass, more preferably 5% by mass to 30% by mass, and particularly preferably 7% by mass to 25% by mass. A fluorine-based surfactant having a fluorine content in this range is effective in terms of uniformity of coating film thickness and liquid-saving properties, and has good solubility in the polymerizable composition.

  Examples of the fluorosurfactant include Megafac F171, F172, F173, F176, F176, F177, F141, F142, F143, F144, R30, F437, F475, F479, F482, F554, F780, F780, F781 (above DIC Corporation), Florard FC430, FC431, FC171 (above, Sumitomo 3M Limited), Surflon S-382, SC-101, Same SC-103, Same SC-104, Same SC-105, Same SC1068, Same SC-381, Same SC-383, Same S393, Same KH-40 (above, manufactured by Asahi Glass Co., Ltd.), Solsperse 20000 (Japan Rouble) Zole Co., Ltd.).

  Specific examples of nonionic surfactants include glycerol, trimethylolpropane, trimethylolethane, and ethoxylates and propoxylates thereof (for example, glycerol propoxylate, glycerin ethoxylate, etc.), polyoxyethylene lauryl ether, polyoxyethylene Stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10, L31, L61, L62 manufactured by BASF, 10R5, 17R2, 25R2, Tetronic 304, 701, 704, 901, 904, 150R1, etc. It is.

  Specific examples of the cationic surfactant include phthalocyanine derivatives (trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.), organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (meth) acrylic acid ( Co) polymer polyflow no. 75, no. 90, no. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusho Co., Ltd.) and the like.

  Specific examples of the anionic surfactant include W004, W005, W017 (manufactured by Yusho Co., Ltd.) and the like.

Examples of the silicone surfactant include “Toray Silicone DC3PA”, “Toray Silicone SH7PA”, “Toray Silicone DC11PA”, “Tore Silicone SH21PA”, “Tore Silicone SH28PA”, “Toray Silicone” manufactured by Toray Dow Corning Co., Ltd. “Silicone SH29PA”, “Toresilicone SH30PA”, “Toresilicone SH8400”, “TSF-4440”, “TSF-4300”, “TSF-4445”, “TSF-4460”, “TSF” manufactured by Momentive Performance Materials, Inc. -4552 "," KP341 "," KF6001 "," KF6002 "manufactured by Shin-Etsu Silicone Co., Ltd.," BYK307 "," BYK323 "," BYK330 "manufactured by Big Chemie.
Among these surfactants, the surfactant having the most preferable fluorine-based surfactant may be used alone or in combination of two or more.
The polymerizable composition may or may not contain a surfactant, but when it is contained, the content of the surfactant is 0.001 mass relative to the total solid mass of the polymerizable composition of the present invention. % To 1% by mass, more preferably 0.01% to 0.1% by mass.

[13] Other components In the polymerizable composition of the present invention, in addition to the essential components and the preferred additives, other components are appropriately selected and used depending on the purpose as long as the effects of the present invention are not impaired. May be.
Examples of other components that can be used in combination include silane coupling agents, thermosetting accelerators, thermal polymerization inhibitors, plasticizers, colorants (color pigments or dyes), and further promotion of adhesion to the substrate surface. Agents and other auxiliary agents (for example, conductive particles, fillers, antifoaming agents, flame retardants, leveling agents, peeling accelerators, antioxidants, fragrances, surface tension modifiers, chain transfer agents, etc.) May be.
By appropriately containing these components, it is possible to adjust properties such as stability, photographic properties, and film properties of the target solder resist. In particular, the addition of a silane coupling agent is preferable for improving the adhesion to the substrate.
The thermal polymerization inhibitor is described in detail, for example, in paragraphs [0101] to [0102] of JP-A-2008-250074.
The plasticizer is described in detail, for example, in paragraphs [0103] to [0104] of JP-A-2008-250074.
The colorant is described in detail, for example, in paragraphs [0105] to [0106] of JP-A-2008-250074 and paragraphs [0038] and [0039] of JP-A-2009-205029.
The adhesion promoter is described in detail in, for example, paragraphs [0107] to [0109] of JP-A-2008-250074.
Any of the additives described in these publications can be used in the polymerizable composition of the present invention.

  The polymerizable composition of the present invention thus obtained preferably has a solid content concentration of 5% by mass to 90% by mass, more preferably 20% by mass to 80% by mass, and most preferably 40%. It is not less than 60% by mass.

The polymerizable composition of the present invention is preferably filtered with a filter for the purpose of removing foreign substances or reducing defects. If it is conventionally used for the filtration use etc., it can use without being specifically limited. For example, fluorine resins such as PTFE (polytetrafluoroethylene), polyamide resins such as nylon-6 and nylon-6,6, polyolefin resins such as polyethylene and polypropylene (PP) (including high density and ultra high molecular weight), etc. Filter. Among these materials, polypropylene (including high density polypropylene) is preferable.
The filter has a pore diameter of about 0.01 to 7.0 μm, preferably about 0.01 to 2.5 μm, and more preferably about 0.01 to 1.5 μm. By setting it as this range, it becomes possible to remove reliably the fine foreign material which is mixed in the dissolved pigment etc. and inhibits preparation of the uniform and smooth coloring composition in a post process.
When using filters, different filters may be combined. At that time, the filtering by the first filter may be performed only once or may be performed twice or more. When filtering two or more times by combining different filters, it is preferable that the second and subsequent pore sizes be larger than the pore size of the first filtering. Moreover, you may combine the 1st filter of a different hole diameter within the range mentioned above. The pore diameter here can refer to the nominal value of the filter manufacturer. As a commercially available filter, for example, it can be selected from various filters provided by Nippon Pole Co., Ltd., Advantech Toyo Co., Ltd., Japan Entegris Co., Ltd. (formerly Japan Microlith Co., Ltd.) or KITZ Micro Filter Co., Ltd. .
As the second filter, a filter formed of the same material as the first filter described above can be used. The pore size of the second filter is suitably about 0.5 to 7.0 μm, preferably about 2.5 to 7.0 μm, more preferably about 4.5 to 6.0 μm. By setting it within this range, the component particles contained in the mixed solution are left in the mixed solution, and foreign matters that hinder the preparation of a uniform and smooth polymerizable composition in the post-process are removed. Can be removed.
For example, the filtering by the first filter may be performed only with the dispersion, and the second filtering may be performed after mixing other components.

The use of the polymerizable composition of the present invention is not particularly limited, and examples thereof include a solder resist, a light shielding film for a back surface of a silicon substrate in a solid-state imaging device, a light shielding film for a wafer level lens, and the like. It is preferable that
When the polymerizable composition of the present invention is for a solder resist, the solid content concentration is preferably 30% by mass or more and 80% by mass or less in order to form a relatively thick coating film, more preferably It is 35 mass% or more and 70 mass% or less, Most preferably, it is 40 mass% or more and 60 mass% or less.
The viscosity of the polymerizable composition of the present invention is preferably in the range of 1 mPa · s to 3000 mPa · s, more preferably in the range of 10 mPa · s to 2000 mPa · s, most preferably The range is from 100 mPa · s to 1500 mPa · s.
When the polymerizable composition of the present invention is for a solder resist, it is preferably in the range of 10 mPa · s or more and 3000 mPa · s or less, more preferably 500 mPa · s, from the viewpoint of thick film formability and uniform coating property. The range is from s to 1500 mPa · s, and most preferably from 700 mPa · s to 1400 mPa · s.

The present invention also relates to a photosensitive layer formed from the above-described polymerizable composition of the present invention. Since such a photosensitive layer is formed from the polymerizable composition of the present invention, the light-shielding property in the infrared region is high, the light-transmitting property in the visible light region is high, and the resolution by alkali development is high. It is a photosensitive layer capable of forming an excellent pattern. In addition, since the polymerizable composition is excellent in stability over time, it is a photosensitive layer that can reliably exhibit the above-described characteristics regardless of the time from preparation of the polymerizable composition to formation of the photosensitive layer.
Furthermore, this invention relates also to the permanent pattern formed from the polymeric composition of above-described this invention. The permanent pattern of the present invention is obtained by subjecting a photosensitive layer formed from the polymerizable composition of the present invention to exposure and alkali development, and uses the polymerizable composition of the present invention. Thus, the pattern has a high light-shielding property in the infrared region, a high light-transmitting property in the visible light region, and an excellent resolution by alkali development. In addition, since the polymerizable composition is excellent in stability over time, it is a pattern that can surely exhibit the above-described characteristics regardless of the time from preparation of the polymerizable composition to formation of the photosensitive layer.
Furthermore, the present invention includes a step of forming a photosensitive layer using the polymerizable composition of the present invention, a step of pattern exposing the photosensitive layer to cure an exposed portion, and removing an unexposed portion by alkali development. The present invention also relates to a pattern forming method having a process of forming a permanent pattern in this order.

  Hereinafter, a method for forming a permanent pattern will be described in detail by taking a patterned solder resist as an example using the polymerizable composition of the present invention. However, the following description regarding the type and amount of the solvent for preparing the coating liquid, the coating liquid coating method, the thickness of the photosensitive layer, the exposure process, and other processes is not limited to the solder resist application. Here, the case where a photosensitive layer (polymerizable composition layer) is formed using a polymerizable composition is taken as an example.

-Photosensitive layer-
In order to form a patterned solder resist (solder resist pattern), first, a photosensitive layer is formed from the polymerizable composition of the present invention. The photosensitive layer is not particularly limited as long as it is a layer formed containing the polymerizable composition, and the film thickness, the laminated structure, and the like can be appropriately selected according to the purpose.

  As a method for forming the photosensitive layer, a coating solution prepared by dissolving, emulsifying or dispersing the polymerizable composition of the present invention in water or a solvent is prepared on a support, and the coating solution is directly applied. The method of forming by making it dry is mentioned.

  The solvent for preparing the coating solution is not particularly limited, and can be appropriately selected depending on the purpose as long as each component of the polymerizable composition of the present invention can be uniformly dissolved or dispersed. Alcohols such as methanol, ethanol, normal-propanol, isopropanol, normal-butanol, secondary butanol, normal-hexanol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diisobutyl ketone, cyclohexanone, cyclopentanone; acetic acid Esters such as ethyl, butyl acetate, acetic acid-normal-amyl, methyl sulfate, ethyl propionate, dimethyl phthalate, ethyl benzoate, propylene glycol monomethyl ether acetate, and methoxypropyl acetate; Aromatic hydrocarbons such as xylene, benzene and ethylbenzene; halogenated hydrocarbons such as carbon tetrachloride, trichloroethylene, chloroform, 1,1,1-trichloroethane, methylene chloride and monochlorobenzene; tetrahydrofuran, diethyl ether, ethylene glycol Examples include ethers such as monomethyl ether, ethylene glycol monoethyl ether, 1-methoxy-2-propanol, and propylene glycol monomethyl ether; dimethylformamide, dimethylacetamide, dimethylsulfoxide, and sulfolane. These may be used alone or in combination of two or more. Moreover, you may add a well-known surfactant.

The method for applying the coating liquid on the support is not particularly limited and may be appropriately selected depending on the intended purpose. For example, using a spin coater, slit spin coater, roll coater, die coater, curtain coater, etc. The method of apply | coating is mentioned.
Moreover, as drying conditions of a coating film, although it changes also with each component, the kind of solvent, a usage rate, etc., it is about 30 seconds-15 minutes normally at the temperature of 60 to 150 degreeC.

  There is no restriction | limiting in particular as thickness of the said photosensitive layer, Although it can select suitably according to the objective, For example, 1 micrometer-100 micrometers are preferable, 2 micrometers-50 micrometers are more preferable, and 4 micrometers-30 micrometers are especially preferable.

(Solder resist pattern formation method)
The method for forming a solder resist permanent pattern using the polymerizable composition for a solder resist of the present invention includes at least an exposure step, and usually, a development step in which conditions are appropriately selected as necessary, and other Process. In the present invention, “exposure” is used to include not only light of various wavelengths but also irradiation of radiation such as electron beams and X-rays.

<Exposure process>
In the exposure step, the photosensitive layer formed by the polymerizable composition layer is exposed through a mask, and only the region irradiated with light is cured by this step.
The exposure is preferably performed by irradiation of radiation, and the radiation that can be used for exposure includes visible light, ultraviolet light, far ultraviolet light, electron beams, X-rays, and the like. As the radiation, in particular, ultraviolet rays such as electron beams, KrF, ArF, g rays, h rays, i rays and visible rays are preferably used. Preferably, g-line, h-line, and i-line are preferable.
Examples of the exposure method include stepper exposure and exposure with a high-pressure mercury lamp.
Exposure is preferably ^{5mJ / cm 2 ~3000mJ / cm 2} , more preferably ^{10mJ / cm 2 ~2000mJ / cm 2} , 50mJ / cm 2 ~1000mJ / cm 2 being most preferred.

<Other processes>
There is no restriction | limiting in particular as said other process, According to the objective, it can select suitably, For example, the surface treatment process of a base material, a development process, a hardening process process, a post exposure process etc. are mentioned.

<Development process>
Subsequent to the exposure step, an alkali development treatment (development step) is performed, and the light non-irradiated part in the exposure step is eluted in an alkaline aqueous solution. Thereby, only the photocured part remains and the solder resist which has pattern-shaped light-shielding property is formed.
As the developer, an organic alkali developer that does not damage the underlying circuit or the like is desirable. The development temperature is usually 20 ° C. to 40 ° C., and the development time is 10 seconds to 180 seconds.

  Examples of the alkali used in the developer include ammonia water, ethylamine, diethylamine, dimethylethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline, pyrrole, piperidine, 1,8-diazabicyclo- [5,4,0. ] An alkaline aqueous solution obtained by diluting an organic alkaline compound such as -7-undecene with pure water so that the concentration is generally 0.001 to 10% by mass, preferably 0.01 to 1% by mass is used. . In the case where a developer composed of such an alkaline aqueous solution is used, it is generally washed (rinsed) with pure water after development.

<Curing process>
The curing treatment step is a step of performing a curing treatment on the photosensitive layer in the formed pattern after the development step, if necessary. By performing this treatment, the mechanical strength of the permanent pattern is obtained. Will improve.
There is no restriction | limiting in particular as said hardening process, Although it can select suitably according to the objective, For example, a whole surface exposure process, a whole surface heat processing, etc. are mentioned suitably.

Examples of the entire surface exposure processing method include a method of exposing the entire surface of the laminated body having the patterned photosensitive layer formed after the development step. By exposing the entire surface, curing of the polymerization component in the polymerizable composition forming the photosensitive layer is accelerated, curing of the permanent pattern further proceeds, and mechanical strength and durability are improved.
There is no restriction | limiting in particular as an apparatus which performs the said whole surface exposure, Although it can select suitably according to the objective, For example, UV exposure machines, such as an ultrahigh pressure mercury lamp, are mentioned suitably.

Moreover, as a method for the entire surface heat treatment, a method of heating the entire surface of the laminate having the patterned photosensitive layer formed after the development step can be mentioned. By heating the entire surface, the film strength of the pattern is increased.
120 to 250 degreeC is preferable and the heating temperature in a whole surface heating has more preferable 120 to 250 degreeC. When the heating temperature is 120 ° C. or higher, the film strength is improved by heat treatment. When the heating temperature is 250 ° C. or lower, the resin in the polymerizable composition is decomposed, and the film quality is prevented from being weak and brittle.
The heating time in the entire surface heating is preferably 3 minutes to 180 minutes, and more preferably 5 minutes to 120 minutes.
There is no restriction | limiting in particular as an apparatus which performs whole surface heating, According to the objective, it can select suitably from well-known apparatuses, For example, a dry oven, a hot plate, IR heater etc. are mentioned.

  Since the patterned resist thus formed has excellent infrared shielding properties, its application range is wide. Since the polymerizable composition of the present invention is excellent in shielding properties in the infrared region and light transmittance in the ultraviolet region to the visible region, a pattern having an excellent shape is formed, and the formed pattern (cured film) is In order to have excellent infrared shielding properties, it is useful for forming a solder resist for a device having a photo diode having sensitivity to the infrared region, particularly for a solid-state imaging device.

  As described above, the polymerizable composition of the present invention is useful not only for forming a solder resist, but also for forming a light shielding film on the back surface of a silicon substrate in a solid-state imaging device and a light shielding film on a wafer level lens.

  Thus, the present invention also relates to a solid-state imaging device having a permanent pattern formed from the polymerizable composition of the present invention.

Hereinafter, although the solid-state image sensor which concerns on embodiment of this invention is demonstrated, referring FIG.1 and FIG.2, this invention is not limited by the following specific examples.
Throughout FIGS. 1 and 2, common portions are denoted by common reference numerals.
In the description, “upper”, “upper”, and “upper” refer to the side far from the silicon substrate 10, and “lower”, “lower”, and “lower” are the sides closer to the silicon substrate 10. Point to.

FIG. 1 is a schematic cross-sectional view illustrating a configuration of a camera module including a solid-state imaging device according to a specific example of the embodiment.
A camera module 200 shown in FIG. 1 is connected to a circuit board 70 that is a mounting board via solder balls 60 that are connection members.
Specifically, the camera module 200 includes a solid-state image sensor substrate 100 having an image sensor section on a first main surface of a silicon substrate, and a glass substrate disposed above the first main surface side of the solid-state image sensor substrate 100. 30 (light transmissive substrate), an infrared cut filter 42 disposed above the glass substrate 30, a lens holder 50 disposed above the glass substrate 30 and the infrared cut filter 42 and having the imaging lens 40 in the internal space, The solid-state image pickup device substrate 100 and the glass substrate 30 are configured to include a light shielding / electromagnetic shield 44 disposed so as to surround the periphery. Each member is bonded by adhesives 20, 41, 43, 45.
In the camera module 200, incident light hν from outside passes through the imaging lens 40, the infrared cut filter 42, and the glass substrate 30 in order, and then reaches the imaging element portion of the solid-state imaging element substrate 100.
The camera module 200 is connected to the circuit board 70 via a solder ball 60 (connection material) on the second main surface side of the solid-state imaging device substrate 100.

FIG. 2 is an enlarged cross-sectional view of the solid-state imaging device substrate 100 in FIG.
The solid-state image sensor substrate 100 includes a silicon substrate 10 as a base, an image sensor 12, an interlayer insulating film 13, a base layer 14, a red color filter 15R, a green color filter 15G, a blue color filter 15B, an overcoat 16, a micro The lens 17, the light shielding film 18, the insulating film 22, the metal electrode 23, the solder resist layer 24, the internal electrode 26, and the element surface electrode 27 are configured.
However, the solder resist layer 24 may be omitted.

First, the configuration on the first main surface side of the solid-state imaging device substrate 100 will be mainly described.
As shown in FIG. 2, an imaging element unit in which a plurality of imaging elements 12 such as CCDs and CMOSs are two-dimensionally arranged is provided on the first main surface side of the silicon substrate 10 that is a base of the solid-state imaging element substrate 100. ing.
An interlayer insulating film 13 is formed on the image sensor 12 in the image sensor section, and a base layer 14 is formed on the interlayer insulating film 13. Furthermore, on the base layer 14, a red color filter 15 R, a green color filter 15 G, and a blue color filter 15 B (hereinafter collectively referred to as “color filter 15”) corresponding to the image sensor 12. ) Are arranged.
A light shielding film (not shown) may be provided around the boundary between the red color filter 15R, the green color filter 15G, and the blue color filter 15B, and the periphery of the imaging element unit. This light shielding film can be produced using, for example, a known black color resist.
An overcoat 16 is formed on the color filter 15, and a microlens 17 is formed on the overcoat 16 so as to correspond to the imaging element 12 (color filter 15).

In addition, a peripheral circuit (not shown) and an internal electrode 26 are provided in the periphery of the image sensor section on the first main surface side, and the internal electrode 26 is electrically connected to the image sensor 12 via the peripheral circuit. Has been.
Furthermore, an element surface electrode 27 is formed on the internal electrode 26 with the interlayer insulating film 13 interposed therebetween. In the interlayer insulating film 13 between the internal electrode 26 and the element surface electrode 27, a contact plug (not shown) for electrically connecting these electrodes is formed. The element surface electrode 27 is used for applying a voltage and reading a signal through the contact plug and the internal electrode 26.
A base layer 14 is formed on the element surface electrode 27. An overcoat 16 is formed on the base layer 14. The base layer 14 and the overcoat 16 formed on the element surface electrode 27 are opened to form a pad opening, and a part of the element surface electrode 27 is exposed.

The above is the configuration on the first main surface side of the solid-state imaging device substrate 100.
On the first main surface side of the solid-state image pickup device substrate 100, an adhesive 20 is provided around the image pickup device portion, and the solid-state image pickup device substrate 100 and the glass substrate 30 are bonded via the adhesive 20.

  The silicon substrate 10 has a through hole that penetrates the silicon substrate 10, and a through electrode that is a part of the metal electrode 23 is provided in the through hole. The imaging element portion and the circuit board 70 are electrically connected by the through electrode.

Next, the configuration on the second main surface side of the solid-state imaging device substrate 100 will be mainly described.
On the second main surface side, an insulating film 22 is formed from the second main surface to the inner wall of the through hole.
On the insulating film 22, a metal electrode 23 is provided that is patterned so as to reach the inside of the through hole from the region on the second main surface of the silicon substrate 10. The metal electrode 23 is an electrode for connecting the image pickup element portion in the solid-state image pickup element substrate 100 and the circuit board 70.
The through electrode is a portion of the metal electrode 23 formed inside the through hole. The through electrode penetrates part of the silicon substrate 10 and the interlayer insulating film, reaches the lower side of the internal electrode 26, and is electrically connected to the internal electrode 26.

Further, a solder resist layer 24 (protective layer) is provided on the second main surface side, which covers the second main surface on which the metal electrode 23 is formed and has an opening that exposes a portion on the metal electrode 23. Insulating film).
Further, on the second main surface side, there is provided a light shielding film 18 that covers the second main surface on which the solder resist layer 24 is formed and has an opening through which a part of the metal electrode 23 is exposed. It has been.
In this configuration, (1) the light-shielding solder resist layer in which the light-shielding film 18 and the solder resist layer 24 are formed as a single layer may be formed from the polymerizable composition of the present invention. The film 18 and the solder resist layer 24 are separate layers, and the light-shielding film 18 may be formed from the polymerizable composition of the present invention (in this case, the solder resist layer is formed from a known solder resist composition). May be)
In FIG. 2, the light shielding film 18 is patterned so as to cover a part of the metal electrode 23 and expose the remaining part, but may be patterned so as to expose the entire metal electrode 23. (The same applies to the patterning of the solder resist layer 24).
The solder resist layer 24 may be omitted, and the light shielding film 18 may be directly formed on the second main surface on which the metal electrode 23 is formed.

  A solder ball 60 as a connection member is provided on the exposed metal electrode 23, and the metal electrode 23 of the solid-state imaging device substrate 100 and a connection electrode (not shown) of the circuit board 70 are connected via the solder ball 60. , Are electrically connected.

Although the configuration of the solid-state image sensor substrate 100 has been described above, each part of the solid-state image sensor substrate 100 other than the light-shielding film 18 is the method described in paragraphs 0033 to 0068 of JP 2009-158863 A or JP 2009. It can be formed by a known method such as the method described in paragraphs 0036 to 0065 of JP-A-99591.
The light shielding film 18 can be formed by the above-described manufacturing method of the light shielding film of the present invention.
The interlayer insulating film 13 is formed as a SiO ₂ film or a SiN film by sputtering, CVD (Chemical Vapor Deposition), or the like, for example.
The color filter 15 is formed by photolithography using a known color resist, for example.
The overcoat 16 and the base layer 14 are formed, for example, by photolithography using a known organic interlayer film forming resist.
The microlens 17 is formed by using styrene resin or the like, for example, by photolithography.
In the case where the solder resist layer 24 is combined with the light shielding film 18 to form a single light shielding solder resist layer, the layer is preferably formed of the polymerizable composition of the present invention.
On the other hand, when the solder resist layer 24 is a layer separate from the light shielding film 18, the solder resist layer 24 is formed by photolithography using, for example, a known solder resist containing a phenol resin, a polyimide resin, or an amine resin. Preferably it is formed.
The solder ball 60 is formed using, for example, Sn—Ag, Sn—Cu, Sn—Ag—Cu as Sn—Pb (eutectic), 95Pb—Sn (high lead high melting point solder), and Pb free solder. . The solder ball 60 is formed in a spherical shape having a diameter of 100 μm to 1000 μm (preferably a diameter of 150 μm to 700 μm), for example.
The internal electrode 26 and the element surface electrode 27 are formed as a metal electrode such as Cu by CMP (Chemical Mechanical Polishing) or photolithography and etching, for example.
The metal electrode 23 is formed as a metal electrode such as Cu, Au, Al, Ni, W, Pt, Mo, Cu compound, W compound, and Mo compound by sputtering, photolithography, etching, and electrolytic plating, for example. The metal electrode 23 may have a single layer configuration or a stacked configuration including two or more layers. The film thickness of the metal electrode 23 is, for example, 0.1 μm to 20 μm (preferably 0.1 μm to 10 μm). The silicon substrate 10 is not particularly limited, but a silicon substrate that is thinned by scraping the back surface of the substrate can be used. Although the thickness of the substrate is not limited, for example, a silicon wafer having a thickness of 20 μm to 200 μm (preferably 30 to 150 μm) is used.
The through hole of the silicon substrate 10 is formed by, for example, photolithography and RIE (Reactive Ion Etching).

  As described above, the solid-state imaging device substrate 100 which is a specific example of the embodiment has been described with reference to FIGS. 1 and 2. However, the embodiment is not limited to the embodiment of FIGS. If it is the structure which has an electrode and a light shielding film, there will be no limitation in the structure in particular.

  Next, an example in which a permanent pattern obtained from the polymerizable composition of the present invention is applied to a light shielding film of a wafer level lens will be described with reference to the drawings.

FIG. 3 is a plan view showing an example of the configuration of a wafer level lens array having a plurality of wafer level lenses.
As shown in FIG. 3, the wafer level lens array includes a substrate 410 and lenses 412 arranged on the substrate 410. Here, in FIG. 3, the plurality of lenses 412 are arranged two-dimensionally with respect to the substrate 410, but may be arranged one-dimensionally.
4 is a cross-sectional view taken along line AA shown in FIG.
As shown in FIG. 4, in the wafer level lens array, a light shielding film 414 for preventing light transmission from a portion other than the lens 412 is provided between the plurality of lenses 412 arranged on the substrate 410.
The wafer level lens is configured by one lens 412 existing on the substrate 410 and a light shielding film 414 provided on the peripheral edge thereof. The polymerizable composition of the present invention is used for forming the light shielding film 414.

  Hereinafter, a configuration of a wafer level lens array in which a plurality of lenses 412 are two-dimensionally arranged on the substrate 410 as shown in FIG. 3 will be described as an example.

  The lens 412 is generally made of the same material as the substrate 410, and is molded integrally on the substrate 410 or formed as a separate structure and fixed on the substrate. is there. Although an example is given here, the wafer level lens of the present invention is not limited to this mode, and can take various modes such as a multi-layer structure and a lens module separated by dicing.

  As a material for forming the lens 412, for example, glass can be used. There are many types of glass, and a glass having a high refractive index can be selected. Therefore, the glass is suitable for a lens material that requires a large power. Further, glass has excellent heat resistance, and has an advantage of withstanding reflow mounting on an imaging unit or the like.

  As another material for forming the lens 412, a resin can be used. Resin is excellent in processability and is suitable for forming a lens surface easily and inexpensively with a mold or the like.

In that case, it is preferable to use an energy curable resin for forming the lens 412. The energy curable resin may be either a resin curable by heat or a resin curable by irradiation with active energy rays (for example, heat, ultraviolet rays, or electron beam irradiation).
Any known energy curable resin can be used, but considering reflow mounting of the imaging unit, a resin having a relatively high softening point such as 200 ° C. or higher is preferable. A resin having a softening point of 250 ° C. or higher is more preferable.

  Hereinafter, with reference to FIG. 5 to FIG. 10, the form and production of the wafer level lens will be specifically described by taking an example of a production method of the wafer level lens array.

[Wafer Level Lens Form and Fabrication (1)]
-Lens formation-
First, a method for forming the lens 412 on the substrate 410 will be described with reference to FIGS. 5 and 6A to 6C.
Here, FIG. 5 is a diagram showing a state in which a molding material (described as M in FIG. 5), which is a resin composition for lens formation, is supplied to the substrate 410.
FIGS. 6A to 6C are diagrams showing a procedure for forming the lens 412 on the substrate 410 with the mold 460.

  As shown in FIG. 5, the molding material M is dropped onto the portion of the substrate 410 where the lens 412 is molded using the dispenser 450. Here, an amount of the molding material M corresponding to one lens 412 is supplied to one part to be supplied.

After the molding material M is supplied to the substrate 410, a mold 460 for molding the lens 412 is disposed on the surface of the substrate 410 to which the molding material M is supplied, as shown in FIG.
Here, the mold 460 is provided with recesses 462 for transferring the shape of the lens 412 in accordance with the number of desired lenses 412.

  As shown in FIG. 6B, the mold 460 is pressed against the molding material M on the substrate 410, and the molding material M is deformed following the shape of the recess 462. When the mold 460 is pressed against the molding material M and the molding material M is a thermosetting resin or an ultraviolet curable resin, heat or ultraviolet rays are irradiated from the outside of the mold 460 to cure the molding material M. Let

  After the molding material M is cured, the substrate 410 and the lens 412 are released from the mold 460 as shown in FIG.

-Formation of light shielding film-
Next, with reference to FIGS. 7A to 7C, a method for forming the light shielding film 414 on the periphery of the lens 412 will be described.
Here, FIGS. 7A to 7C are schematic cross-sectional views showing a process of providing the light-shielding film 414 on the substrate 410 on which the lens 412 is molded.

  The light-shielding film 414 is formed by a light-shielding coating layer forming step (see FIG. 7A) in which the polymerizable composition of the present invention is applied to the substrate 410 to form the light-shielding coating layer 414A. An exposure process (see FIG. 7B) in which the light-shielding coating layer 414A is subjected to pattern exposure through a mask 470, and the exposed light-shielding coating layer 414A is developed to remove uncured portions. And a developing process for forming the light-shielding film 414 (see FIG. 7C).

Note that the light shielding film 414 can be formed arbitrarily before or after the lens 412 is fabricated, but here, a method after the lens 412 is fabricated will be described in detail.
Hereinafter, each process in the formation method of the light shielding film 414 is demonstrated.

<Light-shielding coating layer forming step>
In the light-shielding coating layer forming step, as shown in FIG. 7A, a polymerizable composition is coated on the substrate 410 to form a light-shielding coating layer 414A having a low light reflectance made of the polymerizable composition. To do. At this time, the light-shielding coating layer 414A is formed so as to cover the entire surface of the substrate 410 and the surfaces of the lens surface 412a and the lens edge portion 412b of the lens 412.

There is no restriction | limiting in particular as the board | substrate 410 which can be used for this process. Examples include soda glass, alkali-free glass, Pyrex (registered trademark) glass, quartz glass, and transparent resin.
In addition, the board | substrate 410 said here says the form containing both the lens 412 and the board | substrate 410 in the aspect which forms the lens 412 and the board | substrate 410 integrally.
In addition, an undercoat layer may be provided on these substrates 410 as necessary in order to improve adhesion with an upper layer, prevent diffusion of substances, or flatten the surface of the substrate 10.

As a method of applying the polymerizable composition on the substrate 410 and the lens 412, various application methods such as slit coating, spray coating, inkjet method, spin coating, cast coating, roll coating, and screen printing are applied. be able to.
The film thickness immediately after application of the polymerizable composition is preferably 0.1 μm to 10 μm, more preferably 0.2 μm to 5 μm, from the viewpoint of film thickness uniformity of the coating film and ease of drying of the coating solvent. 0.2 μm to 3 μm is more preferable.

  The light-shielding coating layer 414A applied on the substrate 410 can be dried (prebaked) at a temperature of 50 ° C. to 140 ° C. for 10 seconds to 300 seconds using a hot plate, an oven, or the like.

  The coating film thickness after drying of the polymerizable composition (hereinafter, appropriately referred to as “dry film thickness”) can be arbitrarily selected from the desired performance such as light shielding properties, and is generally from 0.1 μm to less than 50 μm. It is a range.

<Exposure process>
In the exposure step, the light-shielding coating layer 414A formed in the light-shielding coating layer forming step is exposed in a pattern. The pattern exposure may be scanning exposure, but as shown in FIG. 7B, a mode in which exposure is performed through a mask 470 having a predetermined mask pattern is preferable.

  In the exposure in this step, pattern exposure of the light-shielding coating layer 414A is performed through a predetermined mask pattern, and only the portion irradiated with light in the light-shielding coating layer 414A is cured by this exposure. Here, a mask pattern for irradiating light onto the surface of the lens edge 412b and the surface of the substrate 410 between the lenses 412 is used. By doing so, only the light-shielding coating layer 414A in the region excluding the lens surface 412a is cured by light irradiation, and this cured region forms the light-shielding film 414.

  As radiation that can be used for exposure, ultraviolet rays such as g-line, h-line, and i-line are particularly preferably used. This radiation may be a light source having a single wavelength, or a light source including all wavelengths such as a high-pressure mercury lamp may be used.

<Development process>
Next, by performing an alkali development process (development process), the light non-irradiated portion in exposure, that is, the uncured region of the light-shielding coating layer 414A is eluted into the alkaline aqueous solution, and only the region cured by light irradiation is left.
Specifically, the light-shielding coating layer 414A exposed as shown in FIG. 7B is developed to form a light-shielding coating formed on the lens surface 12a as shown in FIG. 7C. Only the layer 414A is removed, and a cured light shielding film 414 is formed in the other region.

As the alkali agent contained in the developer (alkaline aqueous solution) used in the development step, any of organic or inorganic alkali agents and combinations thereof can be used. In the formation of the light-shielding film in the present invention, it is desirable to use an organic alkali agent from the viewpoint of hardly damaging surrounding circuits.
Examples of the alkaline agent used in the developer include ammonia water, ethylamine, diethylamine, dimethylethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline, pyrrole, piperidine, 1,8-diazabicyclo- [5, 4, 0] -7-undecene and other organic alkaline compounds (organic alkaline agents), and inorganic compounds (inorganic alkaline agents) such as sodium hydroxide, potassium hydroxide, sodium hydrogen carbonate, potassium hydrogen carbonate, and the like. An alkaline aqueous solution diluted with pure water so that the concentration is 0.001 to 10% by mass, preferably 0.01 to 1% by mass, is preferably used as the developer.

  The development temperature is usually 20 ° C. to 30 ° C., and the development time is in the range of 20 seconds to 90 seconds.

  When a developer composed of such an alkaline aqueous solution is used, the unexposed portion of the coating film is generally removed with a developer and then washed (rinsed) with pure water. That is, after the development process, the excess developer is sufficiently washed and removed with pure water and further subjected to a drying step.

  In addition, after performing the light-shielding coating layer forming step, the exposure step, and the development step described above, the formed light-shielding film (light-shielding pattern) is cured by heating (post-baking) and / or exposure as necessary. A curing step may be included.

Post-baking is a heat treatment after development for complete curing, and usually a heat curing treatment at 100 ° C. to 250 ° C. is performed. Conditions such as the post-baking temperature and time can be appropriately set depending on the material of the substrate 410 or the lens 412. For example, when the substrate 412 is glass, 180 ° C. to 240 ° C. is preferably used in the above temperature range.
In this post-bake treatment, the light-shielding film 414 formed after development is continuously or batch-wise used by a heating means such as a hot plate, a convection oven (hot air circulation dryer) or a high-frequency heater so as to satisfy the above conditions. It can be done with a formula.

  In the above procedure, the case where the shape of the lens 412 is concave has been described as an example, but the shape is not particularly limited, and may be a convex shape or an aspherical shape. In the above procedure, a wafer level lens in which a plurality of lenses 412 are molded on one surface of the substrate 410 has been described as an example. However, a configuration in which a plurality of lenses 412 are molded on both surfaces of the substrate 410 may be used. In that case, a patterned light shielding film 414 is formed on both surfaces in a region excluding the lens surface.

[Wafer Level Lens Form and Fabrication (2)]
FIG. 8 is a diagram illustrating another configuration example of the wafer level lens array.
The wafer level lens shown in FIG. 8 has a configuration (monolithic type) in which the substrate 410 and the lens 412 are simultaneously molded with the same molding material.
When producing such a wafer level lens, the same molding material as described above can be used. In this example, a plurality of concave lenses 412 are formed on one surface (the upper surface in the drawing) of the substrate 410, and a convex shape is formed on the other surface (the lower surface in the drawing). A plurality of lenses 420 are formed. Further, a patterned light-shielding film 414 is formed on a region of the substrate 410 excluding the lens surface 412a, that is, on the surface of the substrate 410 and the surface of the lens edge portion 412b. As a patterning method for forming the light shielding film 414, the above-described procedure can be applied.

[Wafer Level Lens Form and Fabrication (3)]
Next, with reference to FIGS. 9A to 9C and FIGS. 10A to 10C, still another configuration example of the wafer level lens array and a procedure for manufacturing the same will be described.
Here, FIGS. 9A to 9C are schematic views showing other processes for forming the patterned light-shielding film 414.
FIGS. 10A to 10C are schematic views showing a process of forming a lens 412 after forming a patterned light-shielding film 414 first.

  In the example of the wafer level lens array shown in FIGS. 5 to 8, the patterned light shielding film 414 is formed on the substrate 410 on which the lens 412 is provided. In the procedure described below, first, the substrate 410 is used. This is a procedure for forming the lens 412 on the substrate 410 after forming the patterned light-shielding film 414 on the substrate 410.

-Formation of light shielding film-
First, as shown in FIG. 9A, a light-shielding coating layer forming step of forming a light-shielding coating layer 414A by applying a polymerizable composition on a substrate 410 is performed.

  Thereafter, the light-shielding coating layer 414A applied on the substrate 410 is dried at a temperature of 50 ° C. to 140 ° C. for 10 seconds to 300 seconds using a hot plate, oven, or the like. The dry film thickness of the polymerizable composition can be arbitrarily selected from performances such as desired light shielding properties, and is generally in the range of 0.1 μm or more and less than 50 μm.

Next, as illustrated in FIG. 9B, an exposure process is performed in which the light-shielding coating layer 414 </ b> A formed in the light-shielding coating layer forming process is exposed in a pattern through a mask 470. Mask 470 has a predetermined mask pattern.
In the exposure in this step, the light-shielding coating layer 414 is subjected to pattern exposure to cure only the light-irradiated portion of the light-shielding coating layer 414A. Here, a mask pattern that irradiates light only to the light-shielding coating layer 414 </ b> A in a region excluding a portion that becomes the lens opening 414 a of the lens 412 when the lens 412 is molded in a later process is used. By this method, only the light-shielding coating layer 414A in the region excluding the portion that becomes the lens opening 414a of the lens 412 is cured by light irradiation. As radiation that can be used for exposure, ultraviolet rays such as g-line, h-line, and i-line are preferably used as in the procedure described above.

Next, by performing alkali development processing (development process), only the light-shielding coating layer 414A in the region corresponding to the lens opening 414a of the lens 412 which is an uncured region of the light-shielding coating layer 414A in the pattern exposure is converted into an alkaline aqueous solution. Is eluted. At this time, as shown in FIG. 9C, the light-cured light-shielding coating layer 414A except for the region of the lens opening 414a of the lens 412 remains on the substrate 410 to form a light-shielding film 414.
Here, as the alkaline agent in the alkaline aqueous solution as the developer, the same procedure as described above can be used.
After the development process, the excess developer is then washed away and dried.

  Also in this embodiment, after performing the light-shielding coating layer forming step, the exposure step, and the development step, the curing step of curing the formed light-shielding film by the above-described post-baking and / or exposure as necessary. You may give it.

  Even when the polymerizable composition of the present invention adheres to, for example, a nozzle of a coating apparatus discharge section, a piping section of a coating apparatus, or the inside of a coating apparatus, the polymerizable composition can be easily cleaned and removed using a known cleaning liquid. In this case, in order to perform more efficient cleaning and removal, it is preferable to use the solvent described above as the cleaning liquid as the solvent contained in the polymerizable composition of the present invention.

JP-A-7-128867, JP-A-7-146562, JP-A-8-278737, JP-A-2000-273370, JP-A-2006-85140, JP-A-2006-291191, The cleaning liquids described in JP 2007-2101 A, JP 2007-2102 A, JP 2007-281523 A and the like can also be suitably used as cleaning liquids for cleaning and removing the polymerizable composition of the present invention. .
As the cleaning liquid, it is preferable to use alkylene glycol monoalkyl ether carboxylate or alkylene glycol monoalkyl ether.
These solvents that can be used as the cleaning liquid may be used alone or in combination of two or more.
When mixing 2 or more types of solvent, the mixed solvent formed by mixing the solvent which has a hydroxyl group, and the solvent which does not have a hydroxyl group is preferable. The mass ratio of the solvent having a hydroxyl group and the solvent having no hydroxyl group is from 1/99 to 99/1, preferably from 10/90 to 90/10, more preferably from 20/80 to 80/20. The mixed solvent is a mixed solvent of propylene glycol monomethyl ether acetate (PGMEA; also known as 1-methoxy-2-acetoxypropane) and propylene glycol monomethyl ether (PGME; also known as 1-methoxy-2-propanol). 40 is particularly preferred.
In addition, in order to improve the permeability of the cleaning liquid to the polymerizable composition, the surfactant described above as a surfactant that can be contained in the polymerizable composition may be added to the cleaning liquid.

-Lens formation-
Next, a process of forming the lens 412 after forming the light shielding film 414 will be described.
As shown in FIG. 10A, a molding material M constituting the lens 412 is dropped by a dispenser 450 on a substrate 410 on which a patterned light-shielding film 414 is formed. The molding material M is supplied so as to partially include an end portion of the light shielding film 414 adjacent to the opening so as to cover a region corresponding to the lens opening 414 a of the lens 412.

  After the molding material M is supplied to the substrate 410, a mold 480 for molding a lens is disposed on the surface side of the substrate 410 to which the molding material M is supplied, as shown in FIG. The mold 480 is provided with concave portions 482 for transferring the shape of the lens 412 according to the number of desired lenses 412.

  The mold 480 is pressed against the molding material M on the substrate 410, and the molding material M is deformed following the shape of the recess. When the mold 480 is pressed against the molding material M and the molding material M is a thermosetting resin or an ultraviolet curable resin, the molding material M is cured by irradiating heat or ultraviolet rays from the outside of the mold. .

  After the molding material M is cured, the substrate 410 and the lens 412 are released from the mold 480 to obtain a wafer level lens having a patterned light-shielding film 414 on the substrate 410 as shown in FIG.

  As described above, the patterned light shielding film 414 provided in the wafer level lens is not only provided in the region excluding the lens surface 412a of the lens 412 as shown in FIG. 7, but also as shown in FIG. In addition, the light shielding film 414 may be provided in a region of the lens 412 excluding the lens opening 414a.

  The wafer level lens has sufficient light shielding in a region other than the lens surface 412a of the lens 412 or the lens opening 414a by a light shielding film 414 having a low light reflectance formed on a pattern on at least one surface of the substrate 410. Generation of reflected light can be suppressed. For this reason, when applied to an imaging module having a solid-state imaging device, it is possible to prevent the occurrence of problems such as ghosts and flares associated with reflected light during imaging.

  Further, since the light shielding film 414 is provided on the surface of the substrate, it is not necessary to attach another light shielding member or the like to the wafer level lens, and an increase in manufacturing cost can be suppressed.

  Note that in the case where a structure having an uneven surface is provided around the lens, there is a concern that light incident on the structure may be reflected or diverged, which may cause problems such as ghosts. Therefore, if the light shielding film 414 patterned in the region excluding the lens surface 412a of the lens 412 is provided as shown in FIG. 7, light can be shielded except the lens surface 412a, and the optical performance can be improved. .

  Examples of the present invention will be described below, but the present invention is not limited to these examples.

<Preparation of binder solution A>
In a 1,000 mL three-necked flask, 159 g of 1-methoxy-2-propanol was placed and heated to 85 ° C. under a nitrogen stream. A solution prepared by adding 63.4 g of benzyl methacrylate, 72.3 g of methacrylic acid and 4.15 g of V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) to 159 g of 1-methoxy-2-propanol was added dropwise over 2 hours. did. After completion of the dropwise addition, the reaction was further continued by heating for 5 hours.
Subsequently, the heating was stopped to obtain a copolymer of benzyl methacrylate / methacrylic acid (30/70 mol ratio).
Next, 120.0 g of the copolymer solution was transferred to a 300 mL three-necked flask, and 16.6 g of glycidyl methacrylate and 0.16 g of p-methoxyphenol were added and stirred to dissolve. After dissolution, 3.0 g of triphenylphosphine was added and heated to 100 ° C. to carry out an addition reaction. The disappearance of glycidyl methacrylate was confirmed by gas chromatography, and heating was stopped. 38 g of 1-methoxy-2-propanol was added, acid group content 2 meq / g (acid value 112 mgKOH / g), crosslinkable group content 2.23 meq / g, mass average molecular weight 24,000 (polystyrene conversion value by GPC method) ), A binder solution A having a solid content of 46% by mass was prepared.

<Preparation of binder solution B>
VP-2500 [Nippon Soda poly (p-vinylphenol) (mass average molecular weight 3500, dispersity 1.39)] was dissolved in propylene glycol monomethyl ether acetate to prepare a binder solution B having a solid content of 46% by mass. .

<Preparation of binder solution C>
Cyclomer P ACA230AA [Acrylic polymer having a carboxyl group and an unsaturated group (manufactured by Daicel Chemical Industries, Ltd. (mass average molecular weight 14000, acid value 21 mgKOH / g) in 1-methoxy-2-propanol solution (solid content 55% by mass)] 1-methoxy-2-propanol was added to the mixture to prepare a binder solution C having a solid content of 46% by mass.

<Preparation of binder solution D>
In a 1,000 mL three-necked flask, 159 g of 1-methoxy-2-propanol was placed and heated to 85 ° C. under a nitrogen stream. A solution prepared by adding 63.4 g of benzyl methacrylate, 72.3 g of methacrylic acid and 4.15 g of V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) to 159 g of 1-methoxy-2-propanol was added dropwise over 2 hours. did. After completion of the dropwise addition, the reaction was further continued by heating for 5 hours.
Subsequently, the heating was stopped to obtain a copolymer of benzyl methacrylate / methacrylic acid (30/70 mol ratio).
Next, 120.0 g of the copolymer solution was transferred to a 300 mL three-necked flask, 48.6 g of glycidyl methacrylate and 0.16 g of p-methoxyphenol were added, and the mixture was stirred and dissolved. After dissolution, 3.0 g of triphenylphosphine was added and heated to 100 ° C. to carry out an addition reaction. The progress of the reaction was confirmed by measuring the acid value, and when the acid value became zero, the heating was stopped. 1-Methoxy-2-propanol was added to prepare a binder solution D having an acid group content of 0 meq / g (acid value of 0 mgKOH / g) and a solid content of 46% by mass.

<Preparation of inorganic filler dispersion 1>
After mixing 30 parts by mass of silica (manufactured by Admatechs Co., Ltd., SO-C1) (inorganic filler) and 48.2 parts by mass of the binder solution A, with a motor mill M-50 (manufactured by Eiger), An inorganic filler dispersion liquid 1 was prepared by dispersing zirconia beads having a diameter of 1.0 mm for 1.5 hours at a peripheral speed of 9 m / s.

<Preparation of inorganic filler dispersion 2>
After mixing 30 parts by mass of silica (manufactured by Admatechs Co., Ltd., SO-C1) (inorganic filler) and 48.2 parts by mass of the binder solution C, with a motor mill M-50 (manufactured by Eiger), An inorganic filler dispersion liquid 2 was prepared by dispersing zirconia beads having a diameter of 1.0 mm for 1.5 hours at a peripheral speed of 9 m / s.

<Preparation of polymerizable composition solution>

Example 1
The following composition was mixed, filtered with a first filter, and then filtered with a second filter to obtain a polymerizable composition solution of Example 1.
Nippon Pall Profile Star (polypropylene filtration accuracy 1.5 μm) was used for the first filter, and Nippon Pole HDCII (high density polypropylene filtration accuracy 6.0 μm) was used for the second filter.

-14.9 parts by mass of the above-mentioned binder solution A (alkali-soluble binder)-Dipentaerythritol hexaacrylate (trade name: KAYARAD DPHA, manufacturer: Nippon Kayaku Co., Ltd.) (polymerizable compound) 7.72 parts by mass-Irgacure 907 (Acetophenone compound manufactured by BASF Japan) (polymerization initiator)
2.03 parts by mass · Kayacure DETX-S (thioxanthone compound manufactured by Nippon Kayaku Co., Ltd.) (sensitizer) 0.43 parts by mass · Megafac F-780 (manufactured by Dainippon Ink, Inc.) (surfactant)
0.14 parts by mass / YMF-02 (18.5% by mass dispersion of cesium tungsten oxide (Cs _0.33 WO ₃ ) (average dispersed particle size of 800 nm or less) manufactured by Sumitomo Metal Mining Co., Ltd.)
11.6 parts by mass / Espel 9940A (Elastomer manufactured by Hitachi Chemical Co., Ltd.) 5.0 parts by weight

(Example 2)
A composition of Example 2 was prepared in the same manner as in Example 1 except that the binder solution A was changed to the binder solution C with respect to Example 1.

(Example 3)
A composition of Example 3 was prepared in the same manner as in Example 1 except that the binder solution A was changed to the binder solution B with respect to Example 1.

Example 4
Example 4 is the same as Example 2 except that dipentaerythritol hexaacrylate is changed to tricyclodecane dimethanol diacrylate (trade name: A-DCP, manufacturer: Shin-Nakamura Chemical). A composition was prepared.

(Example 5)
The following composition was mixed to obtain a polymerizable composition solution of Example 5.

-14.9 parts by mass of the binder solution C (alkali-soluble binder)-Tricyclodecane dimethanol diacrylate (trade name: A-DCP, manufacturer: Shin-Nakamura Chemical) (polymerizable compound) 7.72 parts by mass-Irgacure 907 (Acetophenone compound manufactured by BASF Japan) (polymerization initiator)
2.03 parts by mass · Kayacure DETX-S (Nippon Kayaku Co., Ltd. thioxanthone compound) (sensitizer) 0.43 parts by mass · Inorganic filler dispersion 1 (inorganic filler) 45.09 parts by mass · Megafuck F-780 (Dainippon Ink Co., Ltd.) (surfactant)
0.14 parts by mass. YMF-02 (Cesium tungsten oxide (18.5% by mass dispersion of Cs 0.33 WO 3 (average dispersion particle size 800 nm or less)) manufactured by Sumitomo Metal Mining Co., Ltd.)
26.97 parts by mass, 5.0 parts by weight of Esper 9940A (Elastomer manufactured by Hitachi Chemical Co., Ltd.)

(Example 6)
A composition of Example 6 was prepared in the same manner as in Example 5 except that the inorganic filler dispersion liquid 1 was changed to the inorganic filler dispersion liquid 2.

(Comparative Example 1)
A composition of Comparative Example 1 was prepared in the same manner as in Example 1 except that the binder solution A was removed from Example 1.

(Comparative Example 2)
A composition of Comparative Example 2 was prepared in the same manner as in Example 1 except that YMF-02 (cesium tungsten oxide dispersion) was removed from Example 1.

(Comparative Example 3)
A composition of Comparative Example 3 was obtained by using the same composition as in Example 1 except that the binder solution A was replaced with the binder solution D.

(Comparative Example 4)
A composition of Comparative Example 4 was obtained by using the same composition as in Example 1 except that YMF-02 (dispersion of cesium tungsten oxide) was replaced with the following carbon black dispersion A.

(Preparation of carbon black dispersion A)
The following composition I was subjected to a high viscosity dispersion treatment with two rolls to obtain a dispersion. The viscosity of the dispersion at this time was 70000 mPa · s.
Then, the mixture of the following composition II was added to this dispersion, and it stirred for 3 hours using the homogenizer on 3000 rpm conditions. The obtained mixed solution was subjected to fine dispersion treatment for 4 hours with a disperser (trade name: Dispermat, manufactured by GETZMANN) using zirconia beads having a diameter of 0.3 mm to prepare a carbon black dispersion A.

(Composition I)
-Average primary particle size 15 nm carbon black (Pigment Black 7) 23 parts by mass- Benzyl methacrylate / methacrylic acid copolymer propylene glycol monomethyl ether acetate 45% by mass solution 22 parts by mass (benzyl methacrylate unit / methacrylic acid unit = 67 / 33 (mol%), Mw: 28000)
・ Solsperth 5000 (Nippon Lubrizol Co., Ltd.) 1.2 parts by mass

(Composition II)
-Benzyl methacrylate / methacrylic acid copolymer propylene glycol monomethyl ether acetate 45% by mass solution 22 parts by mass (benzyl methacrylate unit / methacrylic acid unit = 67/33 (mol%), Mw: 28000)
・ 200 parts by mass of propylene glycol monomethyl ether acetate

<Evaluation of polymerizable composition>
(Stability evaluation over time)
Regarding the polymerizable compositions of the above Examples and Comparative Examples, the viscosity value (V _i ) at 25 ° C. of the polymerizable composition solution at the time of preparation was measured. Next, the viscosity value (V ₆₀ ) at 25 ° C. after 60 days of aging of the polymerizable composition solution was measured. The relative value represented by the formula [V ₆₀ / V _i × 100] was used to evaluate the stability over time. The closer the relative value is to 100, the better the change from the initial viscosity is. The viscosity was measured using a viscometer RE-80L manufactured by Toki Sangyo Co., Ltd.

(Resist pattern formation and sensitivity evaluation)
The obtained polymerizable compositions of Examples and Comparative Examples were each applied to a silicon wafer by spin coating so that the film thickness was 25 μm, and then heated on a hot plate at 120 ° C. for 2 minutes for photosensitivity. A sex layer was obtained.
Then, the resulting light-sensitive layer, using an i-line stepper, the exposure amount in the range of exposure amount 50~2000mJ / cm ² through a photomask having a square pattern of one side 100 [mu] m, in increments of 50 mJ / cm ² Irradiated with a change.
The photosensitive layer after the exposure was subjected to paddle development at 25 ° C. for 40 seconds using a 2.38 mass% aqueous solution of tetramethylammonium hydroxide. Thereafter, rinsing was performed with a spin shower, followed by washing with pure water to obtain an infrared shielding solder resist pattern. When the development process was carried out for 60 seconds, the minimum exposure amount (sensitivity) at which a square pattern with a side of 100 μm was obtained was measured and used as a measure of pattern formability. The smaller the value, the better the sensitivity.

(Evaluation of infrared shielding and visible light transmission)
Under the above conditions, a polymerizable composition is spin-coated on a glass substrate to form a photosensitive layer (polymerizable composition layer) coating film having a film thickness of 25 μm, and an ultraviolet-visible near-infrared spectrophotometer UV3600 (manufactured by Shimadzu Corporation) is used. Using, the transmittance | permeability of wavelength 1200nm of a coating film was measured. The lower the numerical value, the better the infrared shielding property. It can be said that the transmittance is 2% or less and a practically good infrared shielding property is exhibited.
Furthermore, the transmittance | permeability of wavelength 550nm of the said coating film was measured using ultraviolet visible near-infrared spectrophotometer UV3600 (made by Shimadzu Corporation). It is evaluated that the higher the numerical value, the better the visible light transmittance. It can be said that the visible light transmittance is 30% or more, and the practically good visible light transmittance is exhibited.

(Resolution evaluation)
Under the same conditions as resist pattern formation with the minimum exposure amount (sensitivity) calculated in the sensitivity evaluation, exposure and development are performed with a photomask having a 1: 1 line and space pattern with a line width of 100 μm. A resist pattern having a 1: 1 line and space pattern was obtained. The linearity of the formed pattern was observed using an electron microscope (S-4800 manufactured by Hitachi High-Technologies Corporation), and ranked according to the following evaluation.

Rank 5: Good pattern linearity, good cross section and rectangular level 4. Rank 4: Pattern linearity is almost good and cross section is almost rectangular Level rank 3: Pattern linearity and cross section Although the rectangle is somewhat bad, there is no problem in practical use. Level rank 2: The linearity of the pattern is considerably poor, and the cross section deviates from the rectangle.
Rank 1: Both the linearity of the pattern and the rectangular shape of the cross section are clearly bad.

  The results of the above evaluation are shown in the following table.

From the results of Table 1, according to the polymerizable composition of the present invention, (1) high light shielding property in the infrared region, (2) high light transmission property in the visible light region, and (3) by alkali development. It was found that it was possible to form a pattern satisfying all of the excellent resolution. Moreover, it turned out that it is excellent in the temporal stability of polymeric composition.
On the other hand, in Comparative Examples 1, 3, and 4, pattern resolution could not be performed. Therefore, it was not possible to evaluate sensitivity and resolution for Comparative Examples 1, 3, and 4. Moreover, about the comparative example 2, the light-shielding property in an infrared region was not acquired.

DESCRIPTION OF SYMBOLS 10 Silicon substrate 12 Image pick-up element 13 Interlayer insulating film 14 Base layer 15 Color filter 16 Overcoat 17 Micro lens 18 Light shielding film 20 Adhesive 22 Insulating film 23 Metal electrode 24 Solder resist layer 26 Internal electrode 27 Element surface electrode 30 Glass substrate 40 Imaging Lens 41 Adhesive 42 Infrared cut filter 43 Adhesive 44 Light shielding / electromagnetic shield 45 Adhesive 50 Lens holder 60 Solder ball 70 Circuit board 100 Solid-state imaging device substrate 200 Camera module 410 Substrate 412 and 420 Lens 412a Lens surface 412b Lens edge 414 Light-shielding film 414A Light-shielding coating layer 414a Lens opening 450 Dispenser 460, 480 Mold 462, 482 Recess 470 Mask

Claims (16)

A polymerizable composition comprising a photopolymerization initiator, a polymerizable compound, a tungsten compound represented by the following general formula (I), an alkali-soluble binder, and an elastomer.
M _x W _y O _z (I)
M represents a metal, W represents tungsten, and O represents oxygen.
0.001 ≦ x / y ≦ 1.1
2.2 ≦ z / y ≦ 3.0   The polymerizable composition according to claim 1, wherein the alkali-soluble binder has an acid group.   The polymerizable composition according to claim 2, wherein the acid group is a carboxyl group.   The polymerizable composition according to claim 1, wherein the alkali-soluble binder has a crosslinkable group. Wherein M is a polymerizable composition according to any one of claims 1 to 4 is an alkali metal. The polymerizable compound, the polymerizable composition according to any one of claims 1 to 5, which is a polyfunctional polymerizable compound having a plurality of polymerizable groups in the molecule. Further comprising an inorganic filler, the polymerizable composition according to any one of claims 1-6. The polymerizable composition according to any one of claims 1 to 7, which is a solder resist. The photosensitive layer formed from the polymeric composition of any one of Claims 1-8 . The permanent pattern formed from the polymeric composition of any one of Claims 1-8 . Permanent pattern according to claim 1 0 wherein the permanent pattern is a solder resist layer. Permanent pattern according to claim 1 0 wherein the permanent pattern is an infrared shielding film. Lens and a wafer level lens having a permanent pattern according to claim 1 0, which is formed on the periphery of the lens. Solid-state imaging device having a permanent pattern according to any one of claims 1 0 to 1 3. A solid-state imaging device having a solid-state imaging device substrate having an imaging device section formed on one surface and an infrared shielding film provided on the other surface side of the solid-state imaging device substrate, wherein the infrared shielding film is claimed. the solid-state imaging device is a permanent pattern according to claim 1 0. The step of forming the photosensitive layer according to claim 9 , the step of pattern exposing the photosensitive layer to cure the exposed portion, and the step of removing the unexposed portion by alkali development to form a permanent pattern. The pattern formation method which has in order.