JP5577701B2 - ORGANIC ELECTROLUMINESCENT ELEMENT MATERIAL, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE - Google Patents
ORGANIC ELECTROLUMINESCENT ELEMENT MATERIAL, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE Download PDFInfo
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- JP5577701B2 JP5577701B2 JP2009522625A JP2009522625A JP5577701B2 JP 5577701 B2 JP5577701 B2 JP 5577701B2 JP 2009522625 A JP2009522625 A JP 2009522625A JP 2009522625 A JP2009522625 A JP 2009522625A JP 5577701 B2 JP5577701 B2 JP 5577701B2
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- 125000005447 octyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
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- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
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- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
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- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
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- 125000001725 pyrenyl group Chemical group 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
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- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical compound C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- DLJHXMRDIWMMGO-UHFFFAOYSA-N quinolin-8-ol;zinc Chemical compound [Zn].C1=CN=C2C(O)=CC=CC2=C1.C1=CN=C2C(O)=CC=CC2=C1 DLJHXMRDIWMMGO-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000001022 rhodamine dye Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
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- 239000000565 sealant Substances 0.000 description 1
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- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
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- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
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- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Description
本発明は、有機エレクトロルミネッセンス素子材料、有機エレクトロルミネッセンス素子、表示装置及び照明装置に関する。 The present invention relates to an organic electroluminescence element material, an organic electroluminescence element, a display device, and a lighting device.
従来、発光型の電子ディスプレイデバイスとして、エレクトロルミネッセンスディスプレイ(以下、ELDという)がある。ELDの構成要素としては、無機エレクトロルミネッセンス素子や有機エレクトロルミネッセンス素子(以下、有機EL素子ともいう)が挙げられる。無機エレクトロルミネッセンス素子は平面型光源として使用されてきたが、発光素子を駆動させるためには交流の高電圧が必要である。有機EL素子は発光する化合物を含有する発光層を陰極と陽極で挟んだ構成を有し、発光層に電子及び正孔を注入して、再結合させることにより励起子(エキシトン)を生成させ、このエキシトンが失活する際の光の放出(蛍光・リン光)を利用して発光する素子であり、数V〜数十V程度の電圧で発光が可能であり、さらに自己発光型であるために視野角に富み、視認性が高く、薄膜型の完全固体素子であるために省スペース、携帯性等の観点から注目されている。 Conventionally, as a light-emitting electronic display device, there is an electroluminescence display (hereinafter referred to as ELD). Examples of the constituent elements of ELD include inorganic electroluminescent elements and organic electroluminescent elements (hereinafter also referred to as organic EL elements). Inorganic electroluminescent elements have been used as planar light sources, but an alternating high voltage is required to drive the light emitting elements. An organic EL device has a structure in which a light emitting layer containing a compound that emits light is sandwiched between a cathode and an anode, injects electrons and holes into the light emitting layer, and recombines them to generate excitons (exciton). It is an element that emits light by using light emission (fluorescence / phosphorescence) when this exciton is deactivated, and can emit light at a voltage of about several volts to several tens of volts, and it is self-luminous. In addition, it is attracting attention from the viewpoints of space saving, portability and the like because it is a thin film type complete solid element with a wide viewing angle and high visibility.
しかしながら、今後の実用化に向けた有機EL素子においては、さらに低消費電力で効率よく高輝度に発光する有機EL素子の開発が望まれている。 However, in organic EL elements for practical use in the future, development of organic EL elements that emit light efficiently and with high luminance with lower power consumption is desired.
特許第3093796号公報では、スチルベン誘導体、ジスチリルアリーレン誘導体またはトリススチリルアリーレン誘導体に微量の蛍光体をドープし、発光輝度の向上、素子の長寿命化を達成している。また、8−ヒドロキシキノリンアルミニウム錯体をホスト化合物として、これに微量の蛍光体をドープした有機発光層を有する素子(例えば、特開昭63−264692号公報)、8−ヒドロキシキノリンアルミニウム錯体をホスト化合物として、これにキナクリドン系色素をドープした有機発光層を有する素子(例えば、特開平3−255190号公報)等が知られている。 In Japanese Patent No. 3093796, a small amount of a phosphor is doped into a stilbene derivative, a distyrylarylene derivative or a tristyrylarylene derivative to achieve an improvement in light emission luminance and a longer device lifetime. Further, an element having an organic light-emitting layer in which an 8-hydroxyquinoline aluminum complex is used as a host compound and a small amount of phosphor is doped thereto (for example, JP-A 63-264692), and an 8-hydroxyquinoline aluminum complex is used as a host compound. For example, an element having an organic light emitting layer doped with a quinacridone dye (for example, JP-A-3-255190) is known.
以上のように、励起一重項からの発光を用いる場合、一重項励起子と三重項励起子の生成比が1:3であるため発光性励起種の生成確率が25%であり、光の取り出し効率が約20%であるため、外部取り出し量子効率(η)の限界は5%とされている。 As described above, when light emission from excited singlet is used, the generation ratio of singlet excitons and triplet excitons is 1: 3, and thus the generation probability of luminescent excited species is 25%. Since the efficiency is about 20%, the limit of the external extraction quantum efficiency (η) is set to 5%.
ところが、プリンストン大より励起三重項からのリン光発光を用いる有機EL素子の報告(M.A.Baldo et al.,Nature,395巻,151〜154頁(1998年))がされて以来、室温でリン光を示す材料の研究が活発になってきている。 However, since the University of Princeton reported on an organic EL device using phosphorescence emission from an excited triplet (MA Baldo et al., Nature, 395, 151-154 (1998)), Research on materials that exhibit phosphorescence has become active.
例えば、M.A.Baldo et al.,Nature,403巻,17号,750〜753頁(2000年)、また米国特許第6,097,147号明細書等にも開示されている。 For example, M.M. A. Baldo et al. , Nature, 403, 17, 750-753 (2000), US Pat. No. 6,097,147, and the like.
励起三重項を使用すると、内部量子効率の上限が100%となるため、励起一重項の場合に比べて原理的に発光効率が4倍となり、冷陰極管とほぼ同等の性能が得られる可能性があることから照明用途としても注目されている。 When excited triplets are used, the upper limit of internal quantum efficiency is 100%, so that in principle the luminous efficiency is four times that of excited singlets, and there is a possibility that almost the same performance as cold cathode tubes can be obtained. Therefore, it is attracting attention as a lighting application.
例えば、S.Lamansky et al.,J.Am.Chem.Soc.,123巻,4304頁(2001年)等においては、多くの化合物がイリジウム錯体系等重金属錯体を中心に合成検討されている。 For example, S.M. Lamansky et al. , J .; Am. Chem. Soc. , 123, 4304 (2001), etc., many compounds have been studied mainly for heavy metal complexes such as iridium complexes.
また、前述のM.A.Baldo et al.,Nature,403巻,17号,750〜753頁(2000年)においては、ドーパントとしてトリス(2−フェニルピリジン)イリジウムを用いた検討がされている。 In addition, the aforementioned M.I. A. Baldo et al. , Nature, 403, 17, 750-753 (2000), studies have been made using tris (2-phenylpyridine) iridium as a dopant.
その他、M.E.Tompson等は、The 10th International Workshop on Inorganic and Organic Electroluminescence(EL’00、浜松)において、ドーパントとしてL2Ir(acac)、例えば、(ppy)2Ir(acac)を、またMoon−Jae Youn.0g、Tetsuo Tsutsui等は、やはりThe 10th International Workshop on Inorganic and Organic Electroluminescence(EL’00、浜松)において、ドーパントとしてトリス(2−(p−トリル)ピリジン)イリジウム(Ir(ptpy)3),トリス(ベンゾ[h]キノリン)イリジウム(Ir(bzq)3)等を用いた検討を行っている(なおこれらの金属錯体は一般にオルトメタル化イリジウム錯体と呼ばれている。)。In addition, M.M. E. Thompson et al., In The 10th International Works on Inorganic and Organic Electroluminescence (EL'00, Hamamatsu), used L 2 Ir (acac), for example, (ppy) 2 Ir (acac), e. 0 g, Tetsuo Tsutsui, etc., again The 10th International Workshop on Inorganic and Organic Electroluminescence (EL'00, Hamamatsu), the dopant as tris (2-(p-tolyl) pyridine) iridium (Ir (ptpy) 3), tris ( Studies using benzo [h] quinoline) iridium (Ir (bzq) 3 ) and the like are being conducted (note that these metal complexes are generally called orthometalated iridium complexes).
また、前記S.Lamansky et al.,J.Am.Chem.Soc.,123巻,4304頁(2001年)や特開2001−247859号公報等においても、各種イリジウム錯体を用いて素子化する試みがされている。 In addition, the S. Lamansky et al. , J .; Am. Chem. Soc. , 123, 4304 (2001) and Japanese Patent Application Laid-Open No. 2001-247859, etc., attempts have been made to form devices using various iridium complexes.
また、高い発光効率を得るためにThe 10th International Workshop on Inorganic and Organic Electroluminescence(EL’00、浜松)では、Ikai等はホール輸送性の化合物をリン光性化合物のホストとして用いている。また、M.E.Tompson等は各種電子輸送性材料をリン光性化合物のホストとして、これらに新規なイリジウム錯体をドープして用いている。 In order to obtain high luminous efficiency, in the 10th International Workshop on Inorganic and Organic Electroluminescence (EL'00, Hamamatsu), Ikai et al. Uses a hole transporting compound as a host of a phosphorescent compound. In addition, M.M. E. Thompson et al. Use various electron transporting materials as a host of phosphorescent compounds, doped with a novel iridium complex.
中心金属をイリジウムの代わりに白金としたオルトメタル化錯体も注目されている。この種の錯体に関しては、配位子に特徴を持たせた例が多数知られている。 Orthometalated complexes in which the central metal is platinum instead of iridium are also attracting attention. With respect to this type of complex, many examples are known in which ligands are characterized.
また、りん光ドーパントをデンドリマー化することで、3重項−3重項消滅を抑えてさらなる発光効率向上を試みる研究が行われている(例えば、特許文献1参照)。デンドリマーとは、第1世代、第2世代・・・を持つ巨大な分岐した化合物であり、樹状材料ともいう。しかし、これらりん光デンドリマーは、期待したほどの発光効率向上はしていないのが現状である。
本発明は、上記課題に鑑みなされたものであり、その目的は、高い発光効率を示し、かつ低電圧で駆動できる有機EL素子材料、それを用いた有機EL素子、照明装置及び表示装置を提供することにある。 The present invention has been made in view of the above problems, and an object thereof is to provide an organic EL element material that exhibits high luminous efficiency and can be driven at a low voltage, and an organic EL element, an illumination device, and a display device using the same. There is to do.
本発明の上記課題は、以下の構成(1)〜(6)により達成される。
(1)下記一般式(2a)で表される金属錯体であることを特徴とする有機エレクトロルミネッセンス素子材料。
(2)第1発光波長が400〜500nmの範囲内であることを特徴とする前記(1)に記載の有機エレクトロルミネッセンス素子材料。
(3)前記(1)または(2)に記載の有機エレクトロルミネッセンス素子材料を含有することを特徴とする有機エレクトロルミネッセンス素子。
(4)前記(1)または(2)に記載の有機エレクトロルミネッセンス素子材料を含有する有機層がウェットプロセスにより形成されることを特徴とする有機エレクトロルミネッセンス素子。
(5)前記(3)または(4)に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする表示装置。
(6)前記(3)または(4)に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする照明装置。
なお、以下の構成1〜18は、参考とされる構成である。
The said subject of this invention is achieved by the following structures (1)-( 6 ).
(1) The organic electroluminescent device material which is a Rukin metal complex represented by the following general formula (2a).
(2 ) The organic electroluminescence element material according to (1 ), wherein the first emission wavelength is in the range of 400 to 500 nm.
( 3 ) The organic electroluminescent element characterized by containing the organic electroluminescent element material as described in said (1) or (2) .
( 4 ) An organic electroluminescence device, wherein an organic layer containing the organic electroluminescence device material according to (1) or (2) is formed by a wet process.
( 5 ) A display device comprising the organic electroluminescence element according to ( 3 ) or ( 4 ).
( 6 ) An illuminating device comprising the organic electroluminescence element according to ( 3 ) or ( 4 ).
In addition, the following structures 1-18 are structures used as a reference.
1.下記一般式(1)で表される部分構造を有する金属錯体であることを特徴とする有機エレクトロルミネッセンス素子材料。 1. An organic electroluminescence element material, which is a metal complex having a partial structure represented by the following general formula (1).
(式中、Tはりん光発光ユニットを表し、Ar1は芳香族環または芳香族複素環を表し、H1はキャリア輸送ユニットを表し、n1は0〜10の整数を表す。)
2.下記一般式(2)で表される部分構造を有する金属錯体であることを特徴とする有機エレクトロルミネッセンス素子材料。(In the formula, T represents a phosphorescent light emitting unit, Ar 1 represents an aromatic ring or an aromatic heterocyclic ring, H 1 represents a carrier transport unit, and n1 represents an integer of 0 to 10.)
2. An organic electroluminescence element material, which is a metal complex having a partial structure represented by the following general formula (2).
(式中、X1、X2は各々独立に炭素原子または窒素原子を表し、A1はX1と炭素原子と共に芳香族環または芳香族複素環を形成する原子群を表し、A2はX2と窒素原子と共に芳香族環または芳香族複素環を形成する原子群を表し、Ar1は芳香族環または芳香族複素環を表し、H1はキャリア輸送ユニットを表し、n1は0〜10の整数を表し、Mは元素周期表における8〜10族の金属を表す。)
3.下記一般式(3)で表される部分構造を有する金属錯体であることを特徴とする有機エレクトロルミネッセンス素子材料。(In the formula, X 1 and X 2 each independently represent a carbon atom or a nitrogen atom, A 1 represents an atomic group that forms an aromatic ring or an aromatic heterocyclic ring together with X 1 and a carbon atom, and A 2 represents X 2 and Represents an atomic group that forms an aromatic ring or an aromatic heterocyclic ring together with a nitrogen atom, Ar 1 represents an aromatic ring or an aromatic heterocyclic ring, H 1 represents a carrier transport unit, and n1 represents an integer of 0 to 10 M represents a group 8-10 metal in the periodic table.
3. An organic electroluminescence element material, which is a metal complex having a partial structure represented by the following general formula (3).
(式中、X1、X2は各々独立に炭素原子または窒素原子を表し、A1はX1と炭素原子と共に芳香族環、芳香族複素環を形成する原子群を表し、A2はX2と窒素原子と共に芳香族環、芳香族複素環を形成する原子群を表し、Ar1は芳香族環、芳香族複素環を表し、H1はキャリア輸送ユニットを表し、n1は0〜10の整数を表し、Mは元素周期表における8〜10族の金属を表す。)
4.前記一般式(2)、(3)で表されるA1が、5員の複素環であることを特徴とする前記2または3に記載の有機エレクトロルミネッセンス素子材料。(In the formula, X 1 and X 2 each independently represent a carbon atom or a nitrogen atom, A 1 represents an atomic group that forms an aromatic ring or an aromatic heterocyclic ring together with X 1 and a carbon atom, and A 2 represents X 2 and Represents an atomic group that forms an aromatic ring or an aromatic heterocyclic ring together with a nitrogen atom, Ar 1 represents an aromatic ring or an aromatic heterocyclic ring, H 1 represents a carrier transport unit, and n1 represents an integer of 0 to 10 M represents a group 8-10 metal in the periodic table.
4). 4. The organic electroluminescence device material according to 2 or 3, wherein A1 represented by the general formulas (2) and (3) is a 5-membered heterocyclic ring.
5.前記一般式(2)、(3)で表されるA2が、イミダゾール環であることを特徴とする前記4に記載の有機エレクトロルミネッセンス素子材料。 5. 5. The organic electroluminescence element material according to 4, wherein A2 represented by the general formulas (2) and (3) is an imidazole ring.
6.前記一般式(2)、(3)で表されるA2が、ピラゾール環であることを特徴とする前記4に記載の有機エレクトロルミネッセンス素子材料。 6). 5. The organic electroluminescent element material according to 4, wherein A2 represented by the general formulas (2) and (3) is a pyrazole ring.
7.前記一般式(2)、(3)で表されるA2が、ピリジン環であることを特徴とする前記2または3に記載の有機エレクトロルミネッセンス素子材料。 7). 4. The organic electroluminescent element material according to 2 or 3, wherein A2 represented by the general formulas (2) and (3) is a pyridine ring.
8.前記一般式(2)、(3)で表されるA2が、イソキノリン環であることを特徴とする前記2または3に記載の有機エレクトロルミネッセンス素子材料。 8). 4. The organic electroluminescent element material according to 2 or 3, wherein A2 represented by the general formulas (2) and (3) is an isoquinoline ring.
9.前記一般式(2)、(3)で表されるA1が、芳香族環であることを特徴とする前記2または3に記載の有機エレクトロルミネッセンス素子材料。 9. 4. The organic electroluminescence element material according to 2 or 3, wherein A1 represented by the general formulas (2) and (3) is an aromatic ring.
10.前記一般式(2)、(3)で表されるA1が、ベンゼン環であることを特徴とする前記9に記載の有機エレクトロルミネッセンス素子材料。 10. 10. The organic electroluminescence device material according to 9, wherein A1 represented by the general formulas (2) and (3) is a benzene ring.
11.前記一般式(1)〜(3)で表されるH1が、下記一般式(4)で表されることを特徴とする前記1〜10のいずれか1項に記載の有機エレクトロルミネッセンス素子材料。 11. 11. The organic electroluminescent element material according to any one of 1 to 10, wherein H1 represented by the general formulas (1) to (3) is represented by the following general formula (4).
(式中、X3〜X10は各々独立に炭素原子、窒素原子または酸素原子を表し、R1〜R10は水素原子または置換基を表し、Ar2は芳香族環または芳香族複素環を表し、n2は0〜10の整数を表し、R5とR6は直接結合して環を形成してもよい。)
12.前記一般式(1)〜(3)で表されるH1が、下記一般式(5)で表されることを特徴とする前記1〜10のいずれか1項に記載の有機エレクトロルミネッセンス素子材料。(Wherein X 3 to X 10 each independently represents a carbon atom, a nitrogen atom or an oxygen atom, R 1 to R 10 each represents a hydrogen atom or a substituent, and Ar 2 represents an aromatic ring or an aromatic heterocyclic ring. N2 represents an integer of 0 to 10, and R 5 and R 6 may be directly bonded to form a ring.)
12 11. The organic electroluminescence element material according to any one of 1 to 10, wherein H1 represented by the general formulas (1) to (3) is represented by the following general formula (5).
(式中、X3〜X10は各々独立に炭素原子、窒素原子または酸素原子を表し、R1〜R10は水素原子または置換基を表し、R1〜R10のうちどれかが−(Ar4)n3−で表され、Ar3、Ar4は芳香族環、芳香族複素環を表し、n3は0〜10の整数を表し、R5とR6は直接結合して環を形成してもよい。)
13.金属錯体の金属が白金またはイリジウムであることを特徴とする前記1〜12のいずれか1項に記載の有機エレクトロルミネッセンス素子材料。(Wherein X 3 to X 10 each independently represents a carbon atom, a nitrogen atom or an oxygen atom, R 1 to R 10 each represents a hydrogen atom or a substituent, and any one of R 1 to R 10 is-( Ar 4 ) n 3 —, Ar 3 and Ar 4 represent an aromatic ring or an aromatic heterocyclic ring, n 3 represents an integer of 0 to 10, and R 5 and R 6 are directly bonded to form a ring. May be.)
13. 13. The organic electroluminescent element material according to any one of 1 to 12 above, wherein the metal of the metal complex is platinum or iridium.
14.第1発光波長が400〜500nmの範囲内であることを特徴とする前記1〜13のいずれか1項に記載の有機エレクトロルミネッセンス素子材料。 14 14. The organic electroluminescence element material according to any one of 1 to 13, wherein the first emission wavelength is in the range of 400 to 500 nm.
15.前記1〜14のいずれか1項に記載の有機エレクトロルミネッセンス素子材料を含有することを特徴とする有機エレクトロルミネッセンス素子。 15. The organic electroluminescent element material of any one of said 1-14 is contained, The organic electroluminescent element characterized by the above-mentioned.
16.前記1〜14のいずれか1項に記載の有機エレクトロルミネッセンス素子材料を含有する有機層がウェットプロセスにより形成されることを特徴とする有機エレクトロルミネッセンス素子。 16. 15. An organic electroluminescent element, wherein an organic layer containing the organic electroluminescent element material according to any one of 1 to 14 is formed by a wet process.
17.前記15または16に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする表示装置。 17. 17. A display device comprising the organic electroluminescence element as described in 15 or 16 above.
18.前記15または16に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする照明装置。 18. 17. An illumination device comprising the organic electroluminescence element as described in 15 or 16 above.
本発明により、高い発光効率を示し、かつ低電圧で駆動できる有機EL素子材料、それを用いた有機EL素子、及び該有機EL素子を用いた照明装置、表示装置を提供することができた。 According to the present invention, an organic EL element material that exhibits high luminous efficiency and can be driven at a low voltage, an organic EL element using the material, and an illumination device and a display device using the organic EL element can be provided.
1 ディスプレイ
3 画素
5 走査線
6 データ線
7 電源ライン
10 有機EL素子
11 スイッチングトランジスタ
12 駆動トランジスタ
13 コンデンサ
A 表示部
B 制御部
107 透明電極付きガラス基板
106 有機EL層
105 陰極
102 ガラスカバー
108 窒素ガス
109 捕水剤DESCRIPTION OF SYMBOLS 1 Display 3 Pixel 5 Scan line 6 Data line 7 Power supply line 10 Organic EL element 11 Switching transistor 12 Drive transistor 13 Capacitor A Display part B Control part 107 Glass substrate with a transparent electrode 106 Organic EL layer 105 Cathode 102 Glass cover 108 Nitrogen gas 109 Water catcher
本発明の有機EL素子材料においては、前記1〜14のいずれか1項に規定の構成により、有機EL素子に有用な有機EL素子材料を分子設計することに成功した。これを用いて、高い発光効率を示し、かつ低電圧で駆動可能な有機EL素子、照明装置、表示装置を得ることができた。 In the organic EL element material of the present invention, the organic EL element material useful for the organic EL element has been successfully molecularly designed by the configuration defined in any one of the above 1 to 14. By using this, it was possible to obtain an organic EL element, a lighting device, and a display device that showed high luminous efficiency and could be driven at a low voltage.
以下、本発明に係る各構成要素の詳細について、順次説明する。 Hereinafter, details of each component according to the present invention will be sequentially described.
〔有機EL素子材料〕
本発明の有機EL素子材料について説明する。[Organic EL element materials]
The organic EL element material of the present invention will be described.
本発明の有機EL素子材料(金属錯体)は、りん光発光ユニットとキャリア輸送ユニットが直鎖に連結していることが特徴であり、この有機EL素子材料を用いることにより、高い発光効率を示し、かつ低電圧で駆動可能な有機EL素子が得られた。 The organic EL element material (metal complex) of the present invention is characterized in that the phosphorescent light emitting unit and the carrier transport unit are connected in a straight chain. By using this organic EL element material, high luminous efficiency is exhibited. In addition, an organic EL element that can be driven at a low voltage was obtained.
(りん光発光ユニット)
本発明でりん光発光ユニットとは、図5で表されるような、金属原子MとA環とB環から成る配位子から構成されるユニットのことをいう。(Phosphorescence unit)
In the present invention, the phosphorescent light emitting unit refers to a unit composed of a metal atom M, a ligand composed of an A ring and a B ring, as shown in FIG.
(キャリア輸送ユニット)
芳香族や芳香族複素環から成る化合物で、キャリア輸送をするユニットである。一般的な有機ELの電子輸送材料、正孔輸送材料、ホスト材料のことを指し、好ましくは、前記一般式(4)、(5)で表される化合物である。(Carrier transport unit)
It is a compound that consists of aromatic and aromatic heterocycles and that transports carriers. It refers to a general organic EL electron transport material, hole transport material, and host material, and is preferably a compound represented by the general formulas (4) and (5).
(配位子)
本発明の有機EL素子材料(金属錯体)は、上記一般式(1)〜(3)で表される部分構造を有する、または該一般式(1)〜(3)の各々の互変異性体で表される構造を有する(具体的には、配位子として有することである)ことが特徴であり、該金属錯体の配位子の全てが、前記一般式(1)〜(3)で表される構造、または該一般式(1)〜(3)の各々の互変異性体で表される構造のみで構成されていてもよく、従来公知の金属錯体形成に用いられる、所謂配位子として当該業者が周知の配位子(配位化合物ともいう)を必要に応じて配位子として有していてもよい。(Ligand)
The organic EL device material (metal complex) of the present invention has a partial structure represented by the general formulas (1) to (3), or each tautomer of the general formulas (1) to (3). (Specifically, having a structure as a ligand), and all of the ligands of the metal complex are represented by the general formulas (1) to (3). Or a structure represented by each of the tautomers of the general formulas (1) to (3), which is used for forming a conventionally known metal complex. The child may have a known ligand (also called a coordination compound) as a ligand as necessary.
本発明に記載の効果を好ましく得る観点からは、錯体中の配位子の種類は、好ましくは1〜2種類から構成されることが好ましく、さらに好ましくは1種類である。 From the viewpoint of preferably obtaining the effects described in the present invention, the type of the ligand in the complex is preferably composed of 1 to 2 types, more preferably 1 type.
従来公知の金属錯体に用いられる配位子としては、種々の公知の配位子があるが、例えば、「Photochemistry and Photophysics of Coordination Compounds」,Springer−Verlag社,H.Yersin著 1987年発行、「有機金属化学−基礎と応用−」 裳華房社 山本明夫著 1982年発行 等に記載の配位子(例えば、ハロゲン配位子(好ましくは塩素配位子)、含窒素ヘテロ環配位子(例えば、ビピリジル、フェナントロリン等)、ジケトン配位子なと)が挙げられる。 As a ligand used in a conventionally known metal complex, there are various known ligands. For example, “Photochemistry and Photophysics of Coordination Compounds”, Springer-Verlag, H.C. Published by Yersin in 1987, “Organometallic Chemistry-Fundamentals and Applications-” Liu Huabo Company, Akio Yamamoto, published in 1982, etc. (for example, halogen ligands (preferably chlorine ligands), Nitrogen heterocyclic ligands (for example, bipyridyl, phenanthroline, etc.) and diketone ligands).
(元素周期表の8〜10族の遷移金属元素)
本発明で金属錯体の形成に用いられる金属としては、元素周期表の8〜10族の遷移金属元素(単に遷移金属ともいう)が用いられるが、中でもイリジウム、白金が好ましい。(Transition metal element of group 8-10 of the periodic table)
As the metal used for forming the metal complex in the present invention, a transition metal element belonging to Group 8 to 10 of the periodic table (also simply referred to as a transition metal) is used, among which iridium and platinum are preferable.
《一般式(1)で表される部分構造を有する金属錯体》
一般式(1)において、Tは前記りん光発光ユニットを表し、Ar1は芳香族環または芳香族複素環を表し、H1は前記キャリア輸送ユニットを表し、n1は0〜10の整数を表す。<< Metal Complex having Partial Structure Represented by General Formula (1) >>
In the general formula (1), T represents the phosphorescent light emitting unit, Ar 1 represents an aromatic ring or an aromatic heterocyclic ring, H 1 represents the carrier transport unit, and n1 represents an integer of 0 to 10. .
Ar1で表される芳香族環としては、フェニル基、p−クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基、メタターフェニリル基等が挙げられる。As the aromatic ring represented by Ar 1 , phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group, Examples include a pyrenyl group, a biphenylyl group, a metaterphenylyl group, and the like.
Ar1で表される芳香族複素環としては、オキサゾール環、オキサジアゾール環、オキサトリアゾール環、イソオキサゾール環、テトラゾール環、チアジアゾール環、チアトリアゾール環、イソチアゾール環、チオフェン環、フラン環、ピロール環、イミダゾール環、ピラゾール環、トリアゾール環、ピリジン環、ピリダジン環、ピリミジン環、ピラジン環、ジアジン環、トリアジン環等が挙げられる。The aromatic heterocycle represented by Ar 1 includes an oxazole ring, an oxadiazole ring, an oxatriazole ring, an isoxazole ring, a tetrazole ring, a thiadiazole ring, a thiatriazole ring, an isothiazole ring, a thiophene ring, a furan ring, and a pyrrole. Examples include a ring, an imidazole ring, a pyrazole ring, a triazole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a diazine ring, and a triazine ring.
Ar1で表される芳香族環、芳香族複素環は置換基を有してもよく、置換基としては、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、tert−ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、イソプロピルオキシ基、tert−ブチルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)が好ましく、分岐アルキル基(例えば、イソプロピル基、tert−ブチル基等)または分岐アルコキシ基(例えば、イソプロピルオキシ基、tert−ブチルオキシ基等)がさらに好ましい。The aromatic ring or aromatic heterocyclic ring represented by Ar 1 may have a substituent, and examples of the substituent include an alkyl group (for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a tert-butyl group). , Pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, etc.), alkoxy group (for example, methoxy group, ethoxy group, propyloxy group, isopropyloxy group, tert-butyloxy group, pentyloxy) Group, hexyloxy group, octyloxy group, dodecyloxy group, etc.), branched alkyl group (for example, isopropyl group, tert-butyl group, etc.) or branched alkoxy group (for example, isopropyloxy group, tert-butyloxy group, etc.) Is more preferable.
《一般式(2)で表される部分構造を有する金属錯体》
一般式(2)において、X1、X2は各々独立に炭素原子または窒素原子を表し、A1はX1と炭素原子と共に芳香族環または芳香族複素環を形成する原子群を表し、A2はX2と窒素原子と共に芳香族環または芳香族複素環を形成する原子群を表し、Ar1は芳香族環または芳香族複素環を表し、H1は前記キャリア輸送ユニットを表し、n1は0〜10の整数を表し、Mは前記元素周期表における8〜10族の金属を表す。<< Metal Complex having Partial Structure Represented by General Formula (2) >>
In the general formula (2), X 1 and X 2 each independently represent a carbon atom or a nitrogen atom, A 1 represents an atomic group that forms an aromatic ring or an aromatic heterocyclic ring together with X 1 and the carbon atom, and A 2 represents X 2 represents an atomic group that forms an aromatic ring or an aromatic heterocyclic ring together with a nitrogen atom, Ar 1 represents an aromatic ring or an aromatic heterocyclic ring, H 1 represents the carrier transport unit, and n1 represents 0 to 0 Represents an integer of 10, and M represents a metal of Group 8 to 10 in the periodic table.
A1、A2で表される芳香族環または芳香族複素環としては、一般式(1)のAr1で表される芳香族環または芳香族複素環と同義である。この芳香族環または芳香族複素環は、一般式(1)で説明した置換基を有してもよい。The aromatic ring or aromatic heterocycle represented by A1 or A2 has the same meaning as the aromatic ring or aromatic heterocycle represented by Ar 1 in the general formula (1). This aromatic ring or aromatic heterocyclic ring may have the substituent described in the general formula (1).
《一般式(3)で表される部分構造を有する金属錯体》
一般式(3)において、X1、X2は各々独立に炭素原子または窒素原子を表し、A1はX1と炭素原子と共に芳香族環または芳香族複素環を形成する原子群を表し、A2はX2と窒素原子と共に芳香族環または芳香族複素環を形成する原子群を表し、Ar1は芳香族環または芳香族複素環を表し、H1は前記キャリア輸送ユニットを表し、n1は0〜10の整数を表し、Mは前記元素周期表における8〜10族の金属を表す。<< Metal Complex having Partial Structure Represented by General Formula (3) >>
In the general formula (3), X 1 and X 2 each independently represent a carbon atom or a nitrogen atom, A 1 represents an atomic group that forms an aromatic ring or an aromatic heterocyclic ring together with X 1 and the carbon atom, and A 2 represents X 2 represents an atomic group that forms an aromatic ring or an aromatic heterocyclic ring together with a nitrogen atom, Ar 1 represents an aromatic ring or an aromatic heterocyclic ring, H 1 represents the carrier transport unit, and n1 represents 0 to 0 Represents an integer of 10, and M represents a metal of Group 8 to 10 in the periodic table.
A1、A2で表される芳香族環または芳香族複素環としては、一般式(1)のAr1で表される芳香族環または芳香族複素環と同義である。この芳香族環または芳香族複素環は、一般式(1)で説明した置換基を有してもよい。The aromatic ring or aromatic heterocycle represented by A1 or A2 has the same meaning as the aromatic ring or aromatic heterocycle represented by Ar 1 in the general formula (1). This aromatic ring or aromatic heterocyclic ring may have the substituent described in the general formula (1).
前記一般式(2)、(3)で表されるA1は、5員の複素環であることが好ましい。5員の複素環としては、オキサゾール環、オキサジアゾール環、オキサトリアゾール環、イソオキサゾール環、テトラゾール環、チアジアゾール環、チアトリアゾール環、イソチアゾール環、チオフェン環、フラン環、ピロール環、イミダゾール環、ピラゾール環、トリアゾール環等が挙げられる。 A1 represented by the general formulas (2) and (3) is preferably a 5-membered heterocyclic ring. Examples of the 5-membered heterocyclic ring include oxazole ring, oxadiazole ring, oxatriazole ring, isoxazole ring, tetrazole ring, thiadiazole ring, thiatriazole ring, isothiazole ring, thiophene ring, furan ring, pyrrole ring, imidazole ring, Examples include a pyrazole ring and a triazole ring.
前記一般式(2)、(3)で表されるA2は、イミダゾール環、ピラゾール環、ピリジン環、イソキノリン環であることが好ましい。 A2 represented by the general formulas (2) and (3) is preferably an imidazole ring, a pyrazole ring, a pyridine ring, or an isoquinoline ring.
前記一般式(2)、(3)で表されるA1は、芳香族環であることが好ましい。芳香族環としては、一般式(1)のAr1で表される芳香族環と同義であり、ベンゼン環がより好ましい。A1 represented by the general formulas (2) and (3) is preferably an aromatic ring. As an aromatic ring, it is synonymous with the aromatic ring represented by Ar < 1 > of General formula (1), and a benzene ring is more preferable.
前記一般式(1)〜(3)で表されるH1は、前記一般式(4)で表されることが好ましい。一般式(4)において、X3〜X10は各々独立に炭素原子、窒素原子または酸素原子を表し、R1〜R10は水素原子または置換基を表し、Ar2は芳香族環または芳香族複素環を表し、n2は0〜10の整数を表し、R5とR6は直接結合して環を形成してもよい。R1〜R10で表される置換基、Ar2で表される芳香族環または芳香族複素環は、一般式(1)で説明した置換基、芳香族環、芳香族複素環と同義である。H1 represented by the general formulas (1) to (3) is preferably represented by the general formula (4). In the general formula (4), X 3 to X 10 each independently represents a carbon atom, a nitrogen atom or an oxygen atom, R 1 to R 10 represent a hydrogen atom or a substituent, and Ar 2 represents an aromatic ring or aromatic group. Represents a heterocyclic ring, n2 represents an integer of 0 to 10, and R 5 and R 6 may be directly bonded to form a ring. The substituent represented by R 1 to R 10 , the aromatic ring or aromatic heterocyclic ring represented by Ar 2 has the same meaning as the substituent, aromatic ring or aromatic heterocyclic ring described in the general formula (1). is there.
前記一般式(1)〜(3)で表されるH1は、前記一般式(5)で表されることが好ましい。一般式(5)において、X3〜X10は各々独立に炭素原子、窒素原子または酸素原子を表し、R1〜R10は水素原子または置換基を表し、R1〜R10のうちどれかが−(Ar4)n3−で表され、Ar3、Ar4は芳香族環、芳香族複素環を表し、n3は0〜10の整数を表し、R5とR6は直接結合して環を形成してもよい。R1〜R10で表される置換基、Ar3、Ar4で表される芳香族環または芳香族複素環は、一般式(1)で説明した置換基、芳香族環、芳香族複素環と同義である。H1 represented by the general formulas (1) to (3) is preferably represented by the general formula (5). In the general formula (5), X 3 to X 10 each independently represents a carbon atom, a nitrogen atom or an oxygen atom, R 1 to R 10 represent a hydrogen atom or a substituent, and any one of R 1 to R 10 Is represented by — (Ar 4 ) n3 —, Ar 3 and Ar 4 represent an aromatic ring or an aromatic heterocyclic ring, n3 represents an integer of 0 to 10, and R 5 and R 6 are directly bonded to form a ring. May be formed. The substituent represented by R 1 to R 10 , the aromatic ring or aromatic heterocycle represented by Ar 3 or Ar 4 is the substituent, aromatic ring or aromatic heterocycle described in the general formula (1). It is synonymous with.
以下、本発明の前記一般式(1)〜(3)またはその互変異性体を部分構造として有する金属錯体の具体例を示すが、本発明はこれらに限定されない。 Hereinafter, although the specific example of the metal complex which has the said general formula (1)-(3) or its tautomer of this invention as a partial structure is shown, this invention is not limited to these.
これらの金属錯体は、例えば、Organic Letter誌,vol3,No.16,2579〜2581頁(2001)、Inorganic Chemistry,第30巻,第8号,1685〜1687頁(1991年)、J.Am.Chem.Soc.,123巻,4304頁(2001年)、Inorganic Chemistry,第40巻,第7号,1704〜1711頁(2001年)、Inorganic Chemistry,第41巻,第12号,3055〜3066頁(2002年)、New Journal of Chemistry.,第26巻,1171頁(2002年)、Organic Letter誌,vol8,No.3,415〜418頁(2006)、さらにこれらの文献中に記載の参考文献等の方法を適用することにより合成できる。 These metal complexes are described in, for example, Organic Letter, vol. 16, 2579-2581 (2001), Inorganic Chemistry, Vol. 30, No. 8, pp. 1685-1687 (1991), J. Am. Am. Chem. Soc. , 123, 4304 (2001), Inorganic Chemistry, Vol. 40, No. 7, 1704-1711 (2001), Inorganic Chemistry, Vol. 41, No. 12, 3055-3066 (2002) , New Journal of Chemistry. 26, 1171 (2002), Organic Letter, vol8, No. 3, 415 to 418 (2006), and further by applying methods such as references described in these documents.
《有機EL素子の構成層》
本発明の有機EL素子の構成層について説明する。本発明において、有機EL素子の層構成の好ましい具体例を以下に示すが、本発明はこれらに限定されない。
(i)陽極/発光層/電子輸送層/陰極
(ii)陽極/正孔輸送層/発光層/電子輸送層/陰極
(iii)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極
(iv)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
(v)陽極/陽極バッファー層/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
本発明の有機EL素子においては、第1発光波長(発光極大波長)が400〜500nmの範囲内であることが好ましく、430〜480nmがより好ましい。また、発光極大波長が510〜550nmの緑色発光層、発光極大波長が600〜640nmの赤色発光層を用いた表示装置であることが好ましい。また、これらの少なくとも3層の発光層を積層して白色発光層としたものであってもよい。さらに、発光層間には非発光性の中間層を有していてもよい。本発明の有機EL素子としては白色発光層であることが好ましく、これらを用いた照明装置であることが好ましい。<< Constituent layers of organic EL elements >>
The constituent layers of the organic EL element of the present invention will be described. In this invention, although the preferable specific example of the layer structure of an organic EL element is shown below, this invention is not limited to these.
(I) Anode / light emitting layer / electron transport layer / cathode (ii) Anode / hole transport layer / light emitting layer / electron transport layer / cathode (iii) Anode / hole transport layer / light emitting layer / hole blocking layer / electron Transport layer / cathode (iv) anode / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer / cathode (v) anode / anode buffer layer / hole transport layer / light emitting layer / hole Blocking layer / electron transport layer / cathode buffer layer / cathode In the organic EL device of the present invention, the first emission wavelength (emission maximum wavelength) is preferably in the range of 400 to 500 nm, more preferably 430 to 480 nm. Moreover, it is preferable that it is a display apparatus using the green light emitting layer whose emission maximum wavelength is 510-550 nm, and the red light emitting layer whose emission maximum wavelength is 600-640 nm. Alternatively, a white light emitting layer may be formed by laminating at least three light emitting layers. Further, a non-light emitting intermediate layer may be provided between the light emitting layers. The organic EL element of the present invention is preferably a white light emitting layer, and is preferably a lighting device using these.
本発明の有機EL素子を構成する各層について説明する。 Each layer which comprises the organic EL element of this invention is demonstrated.
《発光層》
本発明に係る発光層は、電極または電子輸送層、正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層であり、発光する部分は発光層の層内であっても発光層と隣接層との界面であってもよい。<Light emitting layer>
The light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
発光層の膜厚の総和は特に制限はないが、膜の均質性や、発光時に不必要な高電圧を印加するのを防止し、かつ、駆動電流に対する発光色の安定性向上の観点から、2nm〜5μmの範囲に調整することが好ましく、さらに好ましくは2〜200nmの範囲に調整され、特に好ましくは、10〜20nmの範囲である。 The total film thickness of the light emitting layer is not particularly limited, but from the viewpoint of improving the uniformity of the film, preventing unnecessary application of high voltage during light emission, and improving the stability of the emission color with respect to the drive current. It is preferable to adjust in the range of 2 nm to 5 μm, more preferably in the range of 2 to 200 nm, and particularly preferably in the range of 10 to 20 nm.
発光層の作製には、後述する発光ドーパントやホスト化合物を、例えば、真空蒸着法、スピンコート法、キャスト法、LB法、インクジェット法等の公知の薄膜化法により製膜して形成することができる。 For the production of the light-emitting layer, a light-emitting dopant or a host compound, which will be described later, is formed and formed by a known thinning method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink-jet method. it can.
本発明の有機EL素子の発光層には、発光ホスト化合物と、発光ドーパント(リン光ドーパント(リン光発光性ドーパントともいう)や蛍光ドーパント等)の少なくとも1種類とを含有することが好ましい。 The light emitting layer of the organic EL device of the present invention preferably contains a light emitting host compound and at least one kind of light emitting dopant (such as a phosphorescent dopant (also referred to as a phosphorescent dopant) or a fluorescent dopant).
(ホスト化合物(発光ホスト等ともいう))
本発明に用いられるホスト化合物について説明する。(Host compound (also called luminescent host))
The host compound used in the present invention will be described.
ここで、本発明においてホスト化合物とは、発光層に含有される化合物の内でその層中での質量比が20%以上であり、かつ室温(25℃)においてリン光発光のリン光量子収率が、0.1未満の化合物と定義される。好ましくはリン光量子収率が0.01未満である。また、発光層に含有される化合物の中で、その層中での質量比が20%以上であることが好ましい。 Here, the host compound in the present invention is a phosphorescent quantum yield of phosphorescence emission at a room temperature (25 ° C.) having a mass ratio of 20% or more in the compound contained in the light emitting layer. Is defined as a compound of less than 0.1. The phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer.
ホスト化合物としては、公知のホスト化合物を単独で用いてもよく、または複数種併用して用いてもよい。ホスト化合物を複数種用いることで、電荷の移動を調整することが可能であり、有機EL素子を高効率化することができる。また、後述する発光ドーパントを複数種用いることで、異なる発光を混ぜることが可能となり、これにより任意の発光色を得ることができる。 As the host compound, known host compounds may be used alone or in combination of two or more. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. Moreover, it becomes possible to mix different light emission by using multiple types of light emission dopants mentioned later, and, thereby, arbitrary luminescent colors can be obtained.
また、本発明に用いられる発光ホストとしては、従来公知の低分子化合物でも、繰り返し単位をもつ高分子化合物でもよく、ビニル基やエポキシ基のような重合性基を有する低分子化合物(蒸着重合性発光ホスト)でもよい。 The light emitting host used in the present invention may be a conventionally known low molecular compound or a high molecular compound having a repeating unit, and a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (deposition polymerization property). Light emitting host).
併用してもよい公知のホスト化合物としては、正孔輸送能、電子輸送能を有しつつ、かつ発光の長波長化を防ぎ、なおかつ高Tg(ガラス転移温度)である化合物が好ましい。 As the known host compound that may be used in combination, a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from becoming longer, and has a high Tg (glass transition temperature) is preferable.
公知のホスト化合物の具体例としては、以下の文献に記載されている化合物が挙げられる。 Specific examples of known host compounds include compounds described in the following documents.
特開2001−257076号公報、同2002−308855号公報、同2001−313179号公報、同2002−319491号公報、同2001−357977号公報、同2002−334786号公報、同2002−8860号公報、同2002−334787号公報、同2002−15871号公報、同2002−334788号公報、同2002−43056号公報、同2002−334789号公報、同2002−75645号公報、同2002−338579号公報、同2002−105445号公報、同2002−343568号公報、同2002−141173号公報、同2002−352957号公報、同2002−203683号公報、同2002−363227号公報、同2002−231453号公報、同2003−3165号公報、同2002−234888号公報、同2003−27048号公報、同2002−255934号公報、同2002−260861号公報、同2002−280183号公報、同2002−299060号公報、同2002−302516号公報、同2002−305083号公報、同2002−305084号公報、同2002−308837号公報等。 JP-A-2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579, 2002-105445 gazette, 2002-343568 gazette, 2002-141173 gazette, 2002-352957 gazette, 2002-203683 gazette, 2002-363227 gazette, 2002-231453 gazette, No. 003-3165, No. 2002-234888, No. 2003-27048, No. 2002-255934, No. 2002-286061, No. 2002-280183, No. 2002-299060, No. 2002. -302516, 2002-305083, 2002-305084, 2002-308837, and the like.
(発光ドーパント)
本発明に係る発光ドーパントについて説明する。(Luminescent dopant)
The light emitting dopant according to the present invention will be described.
本発明に係る発光ドーパントとしては、蛍光ドーパント(蛍光性化合物ともいう)、リン光ドーパント(リン光発光体、リン光性化合物、リン光発光性化合物等ともいう)を用いることができるが、より発光効率の高い有機EL素子を得る観点からは、本発明の有機EL素子の発光層や発光ユニットに使用される発光ドーパント(単に、発光材料ということもある)としては、上記のホスト化合物を含有すると同時に、リン光ドーパントを含有することが好ましい。 As the light-emitting dopant according to the present invention, a fluorescent dopant (also referred to as a fluorescent compound) or a phosphorescent dopant (also referred to as a phosphorescent emitter, a phosphorescent compound, a phosphorescent compound, or the like) can be used. From the viewpoint of obtaining an organic EL device with high luminous efficiency, the light emitting dopant used in the light emitting layer or the light emitting unit of the organic EL device of the present invention (sometimes simply referred to as a light emitting material) contains the above host compound. At the same time, it is preferable to contain a phosphorescent dopant.
(リン光ドーパント)
本発明に係るリン光ドーパントについて説明する。(Phosphorescent dopant)
The phosphorescent dopant according to the present invention will be described.
本発明に係るリン光ドーパントは、励起三重項からの発光が観測される化合物であり、具体的には、室温(25℃)にてリン光発光する化合物であり、リン光量子収率が、25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。 The phosphorescent dopant according to the present invention is a compound in which light emission from an excited triplet is observed. Specifically, the phosphorescent dopant is a compound that emits phosphorescence at room temperature (25 ° C.) and has a phosphorescence quantum yield of 25. Although it is defined as a compound of 0.01 or more at ° C., a preferable phosphorescence quantum yield is 0.1 or more.
上記リン光量子収率は、第4版実験化学講座7の分光IIの398頁(1992年版、丸善)に記載の方法により測定できる。溶液中でのリン光量子収率は種々の溶媒を用いて測定できるが、本発明に係るリン光ドーパントは、任意の溶媒のいずれかにおいて上記リン光量子収率(0.01以上)が達成されればよい。 The phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.
リン光ドーパントの発光は原理としては2種挙げられ、一つはキャリアが輸送されるホスト化合物上でキャリアの再結合が起こってホスト化合物の励起状態が生成し、このエネルギーをリン光ドーパントに移動させることでリン光ドーパントからの発光を得るというエネルギー移動型、もう一つはリン光ドーパントがキャリアトラップとなり、リン光ドーパント上でキャリアの再結合が起こりリン光ドーパントからの発光が得られるというキャリアトラップ型であるが、いずれの場合においても、リン光ドーパントの励起状態のエネルギーはホスト化合物の励起状態のエネルギーよりも低いことが条件である。 There are two types of light emission of phosphorescent dopants in principle. One is the recombination of carriers on the host compound to which carriers are transported to generate an excited state of the host compound, and this energy is transferred to the phosphorescent dopant. The energy transfer type that obtains light emission from the phosphorescent dopant, and the other is that the phosphorescent dopant becomes a carrier trap, carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant is obtained. Although it is a trap type, in any case, the excited state energy of the phosphorescent dopant is required to be lower than the excited state energy of the host compound.
リン光ドーパントは、有機EL素子の発光層に使用される公知のものの中から適宜選択して用いることができる。 The phosphorescent dopant can be appropriately selected from known materials used for the light emitting layer of the organic EL device.
本発明に係るリン光ドーパントとしては、好ましくは元素周期表で8〜10族の金属を含有する錯体系化合物であり、さらに好ましくはイリジウム化合物、オスミウム化合物、または白金化合物(白金錯体系化合物)、希土類錯体であり、中でも最も好ましいのはイリジウム化合物である。 The phosphorescent dopant according to the present invention is preferably a complex compound containing a group 8-10 metal in the periodic table, more preferably an iridium compound, an osmium compound, or a platinum compound (platinum complex compound), Rare earth complexes, most preferably iridium compounds.
以下に、リン光ドーパントとして用いられる化合物の具体例を示すが、本発明はこれらに限定されない。これらの化合物は、例えば、Inorg.Chem.40巻、1704〜1711に記載の方法等により合成できる。 Although the specific example of the compound used as a phosphorescence dopant below is shown, this invention is not limited to these. These compounds are described, for example, in Inorg. Chem. 40, 1704-1711, and the like.
(蛍光ドーパント(蛍光性化合物ともいう))
蛍光ドーパント(蛍光性化合物)としては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、または希土類錯体系蛍光体等が挙げられる。(Fluorescent dopant (also called fluorescent compound))
Fluorescent dopants (fluorescent compounds) include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes Examples thereof include dyes, stilbene dyes, polythiophene dyes, and rare earth complex phosphors.
次に、本発明の有機EL素子の構成層として用いられる、注入層、阻止層、電子輸送層等について説明する。 Next, an injection layer, a blocking layer, an electron transport layer, and the like used as a constituent layer of the organic EL element of the present invention will be described.
《注入層:電子注入層、正孔注入層》
注入層は必要に応じて設け、電子注入層と正孔注入層があり、上記のごとく陽極と発光層または正孔輸送層の間、及び陰極と発光層または電子輸送層との間に存在させてもよい。<< Injection layer: electron injection layer, hole injection layer >>
The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, it exists between the anode and the light emitting layer or the hole transport layer and between the cathode and the light emitting layer or the electron transport layer. May be.
注入層とは、駆動電圧低下や発光輝度向上のために電極と有機層間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123〜166頁)に詳細に記載されており、正孔注入層(陽極バッファー層)と電子注入層(陰極バッファー層)とがある。 An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance. “Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) 2), Chapter 2, “Electrode Materials” (pages 123 to 166) in detail, and includes a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
陽極バッファー層(正孔注入層)は、特開平9−45479号公報、同9−260062号公報、同8−288069号公報等にもその詳細が記載されており、具体例として、銅フタロシアニンに代表されるフタロシアニンバッファー層、酸化バナジウムに代表される酸化物バッファー層、アモルファスカーボンバッファー層、ポリアニリン(エメラルディン)やポリチオフェン等の導電性高分子を用いた高分子バッファー層等が挙げられる。 The details of the anode buffer layer (hole injection layer) are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069 and the like. As a specific example, copper phthalocyanine is used. Examples thereof include a phthalocyanine buffer layer represented by an oxide, an oxide buffer layer represented by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
陰極バッファー層(電子注入層)は、特開平6−325871号公報、同9−17574号公報、同10−74586号公報等にもその詳細が記載されており、具体的にはストロンチウムやアルミニウム等に代表される金属バッファー層、フッ化リチウムに代表されるアルカリ金属化合物バッファー層、フッ化マグネシウムに代表されるアルカリ土類金属化合物バッファー層、酸化アルミニウムに代表される酸化物バッファー層等が挙げられる。上記バッファー層(注入層)はごく薄い膜であることが望ましく、素材にもよるがその膜厚は0.1nm〜5μmの範囲が好ましい。 The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc. Metal buffer layer typified by lithium, alkali metal compound buffer layer typified by lithium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride, oxide buffer layer typified by aluminum oxide, etc. . The buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 μm although it depends on the material.
《阻止層:正孔阻止層、電子阻止層》
阻止層は、上記のごとく有機化合物薄膜の基本構成層の他に必要に応じて設けられるものである。例えば、特開平11−204258号公報、同11−204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。<Blocking layer: hole blocking layer, electron blocking layer>
As described above, the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film. For example, it is described in JP-A Nos. 11-204258, 11-204359, and “Organic EL elements and their forefront of industrialization” (issued by NTT, Inc. on November 30, 1998). There is a hole blocking (hole blocking) layer.
正孔阻止層とは広い意味では電子輸送層の機能を有し、電子を輸送する機能を有しつつ正孔を輸送する能力が著しく小さい正孔阻止材料からなり、電子を輸送しつつ正孔を阻止することで電子と正孔の再結合確率を向上させることができる。また、後述する電子輸送層の構成を必要に応じて、本発明に係わる正孔阻止層として用いることができる。 The hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking. Moreover, the structure of the electron carrying layer mentioned later can be used as a hole-blocking layer concerning this invention as needed.
本発明の有機EL素子の正孔阻止層は、発光層に隣接して設けられていることが好ましい。 The hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
正孔阻止層には、前述のホスト化合物として挙げたアザカルバゾール誘導体を含有することが好ましい。 The hole blocking layer preferably contains the azacarbazole derivative mentioned as the host compound.
また、本発明においては、複数の発光色の異なる複数の発光層を有する場合、その発光極大波長が最も短波にある発光層が、全発光層中、最も陽極に近いことが好ましいが、このような場合、該最短波層と該層の次に陽極に近い発光層との間に正孔阻止層を追加して設けることが好ましい。さらには、該位置に設けられる正孔阻止層に含有される化合物の50質量%以上が、前記最短波発光層のホスト化合物に対しそのイオン化ポテンシャルが0.3eV以上大きいことが好ましい。 In the present invention, when a plurality of light emitting layers having different light emission colors are provided, the light emitting layer having the shortest wavelength of light emission is preferably closest to the anode among all the light emitting layers. In this case, it is preferable to additionally provide a hole blocking layer between the shortest wave layer and the light emitting layer next to the anode next to the anode. Furthermore, it is preferable that 50% by mass or more of the compound contained in the hole blocking layer provided at the position has an ionization potential of 0.3 eV or more larger than the host compound of the shortest wave emitting layer.
イオン化ポテンシャルは化合物のHOMO(最高被占分子軌道)レベルにある電子を真空準位に放出するのに必要なエネルギーで定義され、例えば下記に示すような方法により求めることができる。 The ionization potential is defined by the energy required to emit an electron at the HOMO (highest occupied molecular orbital) level of the compound to the vacuum level, and can be obtained by the following method, for example.
(1)米国Gaussian社製の分子軌道計算用ソフトウェアであるGaussian98(Gaussian98、Revision A.11.4,M.J.Frisch,et al,Gaussian,Inc.,Pittsburgh PA,2002.)を用い、キーワードとしてB3LYP/6−31G*を用いて構造最適化を行うことにより算出した値(eV単位換算値)の小数点第2位を四捨五入した値としてイオン化ポテンシャルを求めることができる。この計算値が有効な背景には、この手法で求めた計算値と実験値の相関が高いためである。 (1) Using Gaussian 98 (Gaussian 98, Revision A.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.), a molecular orbital calculation software manufactured by Gaussian, USA The ionization potential can be obtained as a value obtained by rounding off the second decimal place of the value (eV unit converted value) calculated by performing structural optimization using B3LYP / 6-31G *. This calculation value is effective because the correlation between the calculation value obtained by this method and the experimental value is high.
(2)イオン化ポテンシャルは光電子分光法で直接測定する方法により求めることもできる。例えば、理研計器社製の低エネルギー電子分光装置「Model AC−1」を用いて、あるいは紫外光電子分光として知られている方法を好適に用いることができる。 (2) The ionization potential can also be obtained by a method of directly measuring by photoelectron spectroscopy. For example, a method known as ultraviolet photoelectron spectroscopy can be suitably used by using a low energy electron spectrometer “Model AC-1” manufactured by Riken Keiki Co., Ltd.
一方、電子阻止層とは広い意味では正孔輸送層の機能を有し、正孔を輸送する機能を有しつつ電子を輸送する能力が著しく小さい材料からなり、正孔を輸送しつつ電子を阻止することで電子と正孔の再結合確率を向上させることができる。また、後述する正孔輸送層の構成を必要に応じて電子阻止層として用いることができる。本発明に係る正孔阻止層、電子輸送層の膜厚としては、好ましくは3nm〜100nmであり、さらに好ましくは5nm〜30nmである。 On the other hand, the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved. Moreover, the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed. The film thickness of the hole blocking layer and the electron transport layer according to the present invention is preferably 3 nm to 100 nm, and more preferably 5 nm to 30 nm.
《正孔輸送層》
正孔輸送層とは正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層、電子阻止層も正孔輸送層に含まれる。正孔輸送層は単層または複数層設けることができる。《Hole transport layer》
The hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers.
正孔輸送材料としては、正孔の注入または輸送、電子の障壁性のいずれかを有するものであり、有機物、無機物のいずれであってもよい。例えば、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体及びピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体、アニリン系共重合体、また導電性高分子オリゴマー、特にチオフェンオリゴマー等が挙げられる。 The hole transport material has any one of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
正孔輸送材料としては上記のものを使用することができるが、ポルフィリン化合物、芳香族第3級アミン化合物及びスチリルアミン化合物、特に芳香族第3級アミン化合物を用いることが好ましい。 The above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
芳香族第3級アミン化合物及びスチリルアミン化合物の代表例としては、N,N,N′,N′−テトラフェニル−4,4′−ジアミノフェニル;N,N′−ジフェニル−N,N′−ビス(3−メチルフェニル)−〔1,1′−ビフェニル〕−4,4′−ジアミン(TPD);2,2−ビス(4−ジ−p−トリルアミノフェニル)プロパン;1,1−ビス(4−ジ−p−トリルアミノフェニル)シクロヘキサン;N,N,N′,N′−テトラ−p−トリル−4,4′−ジアミノビフェニル;1,1−ビス(4−ジ−p−トリルアミノフェニル)−4−フェニルシクロヘキサン;ビス(4−ジメチルアミノ−2−メチルフェニル)フェニルメタン;ビス(4−ジ−p−トリルアミノフェニル)フェニルメタン;N,N′−ジフェニル−N,N′−ジ(4−メトキシフェニル)−4,4′−ジアミノビフェニル;N,N,N′,N′−テトラフェニル−4,4′−ジアミノジフェニルエーテル;4,4′−ビス(ジフェニルアミノ)クオードリフェニル;N,N,N−トリ(p−トリル)アミン;4−(ジ−p−トリルアミノ)−4′−〔4−(ジ−p−トリルアミノ)スチリル〕スチルベン;4−N,N−ジフェニルアミノ−(2−ジフェニルビニル)ベンゼン;3−メトキシ−4′−N,N−ジフェニルアミノスチルベンゼン;N−フェニルカルバゾール、さらには米国特許第5,061,569号明細書に記載されている2個の縮合芳香族環を分子内に有するもの、例えば、4,4′−ビス〔N−(1−ナフチル)−N−フェニルアミノ〕ビフェニル(NPD)、特開平4−308688号公報に記載されているトリフェニルアミンユニットが3つスターバースト型に連結された4,4′,4″−トリス〔N−(3−メチルフェニル)−N−フェニルアミノ〕トリフェニルアミン(MTDATA)等が挙げられる。 Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ', N'-tetraphenyl-4,4'-diaminophenyl; N, N'-diphenyl-N, N'- Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' − (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl; N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino- (2-diphenylvinyl) benzene; 3-methoxy-4'-N, N-diphenylaminostilbenzene; N-phenylcarbazole, as well as two of those described in US Pat. No. 5,061,569 Having a condensed aromatic ring in the molecule, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-308 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 88 are linked in a starburst type ( MTDATA) and the like.
さらにこれらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。また、p型−Si、p型−SiC等の無機化合物も正孔注入材料、正孔輸送材料として使用することができる。 Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used. In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
また、特開平11−251067号公報、J.Huang et.al.著文献(Applied Physics Letters 80(2002),p.139)に記載されているような、所謂p型正孔輸送材料を用いることもできる。本発明においては、より高効率の発光素子が得られることからこれらの材料を用いることが好ましい。 JP-A-11-251067, J. Org. Huang et. al. A so-called p-type hole transport material as described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used. In the present invention, these materials are preferably used because a light-emitting element with higher efficiency can be obtained.
正孔輸送層は上記正孔輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができる。正孔輸送層の膜厚については特に制限はないが、通常は5nm〜5μm程度、好ましくは5〜200nmである。この正孔輸送層は上記材料の1種または2種以上からなる一層構造であってもよい。 The hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can. Although there is no restriction | limiting in particular about the film thickness of a positive hole transport layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5-200 nm. The hole transport layer may have a single layer structure composed of one or more of the above materials.
また、不純物をドープしたp性の高い正孔輸送層を用いることもできる。その例としては、特開平4−297076号公報、特開2000−196140号公報、同2001−102175号公報の各公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。 Alternatively, a hole transport layer having a high p property doped with impurities can be used. Examples thereof include JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.
本発明においては、このようなp性の高い正孔輸送層を用いることが、より低消費電力の素子を作製することができるため好ましい。 In the present invention, it is preferable to use a hole transport layer having such a high p property because a device with lower power consumption can be produced.
《電子輸送層》
電子輸送層とは電子を輸送する機能を有する材料からなり、広い意味で電子注入層、正孔阻止層も電子輸送層に含まれる。電子輸送層は単層または複数層設けることができる。《Electron transport layer》
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided as a single layer or a plurality of layers.
従来、単層の電子輸送層、及び複数層とする場合は発光層に対して陰極側に隣接する電子輸送層に用いられる電子輸送材料(正孔阻止材料を兼ねる)としては、陰極より注入された電子を発光層に伝達する機能を有していればよく、その材料としては従来公知の化合物の中から任意のものを選択して用いることができ、例えば、ニトロ置換フルオレン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、カルボジイミド、フレオレニリデンメタン誘導体、アントラキノジメタン及びアントロン誘導体、オキサジアゾール誘導体等が挙げられる。さらに上記オキサジアゾール誘導体において、オキサジアゾール環の酸素原子を硫黄原子に置換したチアジアゾール誘導体、電子吸引基として知られているキノキサリン環を有するキノキサリン誘導体も、電子輸送材料として用いることができる。さらにこれらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。 Conventionally, in the case of a single electron transport layer and a plurality of layers, an electron transport material (also serving as a hole blocking material) used for an electron transport layer adjacent to the light emitting layer on the cathode side is injected from the cathode. As long as it has a function of transferring electrons to the light-emitting layer, any material can be selected and used from among conventionally known compounds. For example, nitro-substituted fluorene derivatives, diphenylquinone derivatives Thiopyrandioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane and anthrone derivatives, oxadiazole derivatives and the like. Furthermore, in the above oxadiazole derivative, a thiadiazole derivative in which an oxygen atom of the oxadiazole ring is substituted with a sulfur atom, or a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group can also be used as an electron transport material. Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
また8−キノリノール誘導体の金属錯体、例えば、トリス(8−キノリノール)アルミニウム(Alq)、トリス(5,7−ジクロロ−8−キノリノール)アルミニウム、トリス(5,7−ジブロモ−8−キノリノール)アルミニウム、トリス(2−メチル−8−キノリノール)アルミニウム、トリス(5−メチル−8−キノリノール)アルミニウム、ビス(8−キノリノール)亜鉛(Znq)等、及びこれらの金属錯体の中心金属がIn、Mg、Cu、Ca、Sn、GaまたはPbに置き替わった金属錯体も、電子輸送材料として用いることができる。その他、メタルフリーもしくはメタルフタロシアニン、またはそれらの末端がアルキル基やスルホン酸基等で置換されているものも、電子輸送材料として好ましく用いることができる。また、発光層の材料として例示したジスチリルピラジン誘導体も、電子輸送材料として用いることができるし、正孔注入層、正孔輸送層と同様にn型−Si、n型−SiC等の無機半導体も電子輸送材料として用いることができる。 Also, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum, Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), etc., and the central metals of these metal complexes are In, Mg, Cu , Ca, Sn, Ga, or Pb can also be used as an electron transport material. In addition, metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material. In addition, the distyrylpyrazine derivative exemplified as the material of the light emitting layer can also be used as an electron transport material, and an inorganic semiconductor such as n-type-Si, n-type-SiC, etc. as in the case of the hole injection layer and the hole transport layer. Can also be used as an electron transporting material.
電子輸送層は上記電子輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができる。電子輸送層の膜厚については特に制限はないが、通常は5nm〜5μm程度、好ましくは5〜200nmである。電子輸送層は上記材料の1種または2種以上からなる一層構造であってもよい。 The electron transport layer can be formed by thinning the electron transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. Although there is no restriction | limiting in particular about the film thickness of an electron carrying layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5-200 nm. The electron transport layer may have a single layer structure composed of one or more of the above materials.
また、不純物をドープしたn性の高い電子輸送層を用いることもできる。その例としては、特開平4−297076号公報、同10−270172号公報、特開2000−196140号公報、同2001−102175号公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。 Further, an electron transport layer having a high n property doped with impurities can also be used. Examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
本発明においては、このようなn性の高い電子輸送層を用いることがより低消費電力の素子を作製することができるため好ましい。 In the present invention, it is preferable to use an electron transport layer having such a high n property because an element with lower power consumption can be manufactured.
《陽極》
有機EL素子における陽極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としては、Au等の金属、CuI、インジウムチンオキシド(ITO)、SnO2、ZnO等の導電性透明材料が挙げられる。また、IDIXO(In2O3−ZnO)等非晶質で透明導電膜を作製可能な材料を用いてもよい。陽極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させ、フォトリソグラフィー法で所望の形状のパターンを形成してもよく、あるいはパターン精度をあまり必要としない場合は(100μm以上程度)、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。あるいは、有機導電性化合物のように塗布可能な物質を用いる場合には、印刷方式、コーティング方式等湿式製膜法を用いることもできる。この陽極より発光を取り出す場合には、透過率を10%より大きくすることが望ましく、また陽極としてのシート抵抗は数百Ω/□以下が好ましい。さらに膜厚は材料にもよるが、通常は、10〜1000nmの範囲であり、好ましくは10〜200nmの範囲で選ばれる。"anode"
As the anode in the organic EL element, an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used. Specific examples of such electrode substances include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO 2 , and ZnO. Alternatively, an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used. For the anode, these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a pattern having a desired shape may be formed by a photolithography method, or when pattern accuracy is not so high (about 100 μm or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material. Or when using the substance which can be apply | coated like an organic electroconductivity compound, wet film forming methods, such as a printing system and a coating system, can also be used. When light emission is extracted from the anode, it is desirable that the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred Ω / □ or less. Further, although the film thickness depends on the material, it is usually in the range of 10 to 1000 nm, preferably in the range of 10 to 200 nm.
《陰極》
一方、陰極としては仕事関数の小さい(4eV以下)金属(電子注入性金属と称する)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム−カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。陰極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させることにより、作製することができる。また、陰極としてのシート抵抗は数百Ω/□以下が好ましく、膜厚は通常10nm〜5μm、好ましくは50nm〜200nmの範囲で選ばれる。尚、発光した光を透過させるため、有機EL素子の陽極または陰極のいずれか一方が透明または半透明であれば発光輝度が向上し好都合である。"cathode"
On the other hand, as the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like. Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Suitable are a magnesium / aluminum mixture, a magnesium / indium mixture, an aluminum / aluminum oxide (Al 2 O 3 ) mixture, a lithium / aluminum mixture, aluminum and the like. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance as a cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 nm to 200 nm. In order to transmit the emitted light, if either one of the anode or the cathode of the organic EL element is transparent or translucent, the light emission luminance is improved, which is convenient.
また、陰極に上記金属を1〜20nmの膜厚で作製した後に、陽極の説明で挙げた導電性透明材料をその上に作製することで、透明または半透明の陰極を作製することができ、これを応用することで陽極と陰極の両方が透過性を有する素子を作製することができる。 Moreover, after producing the said metal with a film thickness of 1-20 nm on a cathode, a transparent or semi-transparent cathode can be produced by producing the electroconductive transparent material quoted by description of the anode on it, By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.
《支持基板》
本発明の有機EL素子に用いることのできる支持基板(以下、基体、基板、基材、支持体等とも言う)としては、ガラス、プラスチック等の種類には特に限定はなく、また透明であっても不透明であってもよい。支持基板側から光を取り出す場合には、支持基板は透明であることが好ましい。好ましく用いられる透明な支持基板としては、ガラス、石英、透明樹脂フィルムを挙げることができる。特に好ましい支持基板は、有機EL素子にフレキシブル性を与えることが可能な樹脂フィルムである。《Support substrate》
As a support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention, there is no particular limitation on the type of glass, plastic, etc. May be opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
樹脂フィルムとしては、例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステル、ポリエチレン、ポリプロピレン、セロファン、セルロースジアセテート、セルローストリアセテート、セルロースアセテートブチレート、セルロースアセテートプロピオネート(CAP)、セルロースアセテートフタレート(TAC)、セルロースナイトレート等のセルロースエステル類またはそれらの誘導体、ポリ塩化ビニリデン、ポリビニルアルコール、ポリエチレンビニルアルコール、シンジオタクティックポリスチレン、ポリカーボネート、ノルボルネン樹脂、ポリメチルペンテン、ポリエーテルケトン、ポリイミド、ポリエーテルスルホン(PES)、ポリフェニレンスルフィド、ポリスルホン類、ポリエーテルイミド、ポリエーテルケトンイミド、ポリアミド、フッ素樹脂、ナイロン、ポリメチルメタクリレート、アクリルあるいはポリアリレート類、アートン(商品名JSR社製)あるいはアペル(商品名三井化学社製)といったシクロオレフィン系樹脂等を挙げられる。 Examples of the resin film include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by Mitsui Chemicals) Can be mentioned.
樹脂フィルムの表面には、無機物、有機物の被膜またはその両者のハイブリッド被膜が形成されていてもよく、JIS K 7129−1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が0.01g/(m2・24h)以下のバリア性フィルムであることが好ましく、さらには、JIS K 7126−1987に準拠した方法で測定された酸素透過度が、10-3ml/(m2・24hr・MPa)以下、水蒸気透過度が、10-5g/(m2・24h)以下の高バリア性フィルムであることが好ましい。On the surface of the resin film, an inorganic film, an organic film, or a hybrid film of both may be formed. Water vapor permeability (25 ± 0.5 ° C.) measured by a method according to JIS K 7129-1992. , Relative humidity (90 ± 2)% RH) is preferably 0.01 g / (m 2 · 24 h) or less of a barrier film, and oxygen measured by a method according to JIS K 7126-1987. A high barrier film having a permeability of 10 −3 ml / (m 2 · 24 hr · MPa) or less and a water vapor permeability of 10 −5 g / (m 2 · 24 h) or less is preferable.
バリア膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。さらに該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることがより好ましい。無機層と有機層の積層順については特に制限はないが、両者を交互に複数回積層させることが好ましい。 As a material for forming the barrier film, any material may be used as long as it has a function of suppressing entry of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and organic material layers. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times.
バリア膜の形成方法については特に限定はなく、例えば、真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ−イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができるが、特開2004−68143号公報に記載されているような大気圧プラズマ重合法によるものが特に好ましい。 The method for forming the barrier film is not particularly limited. For example, the vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma weight A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, and the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
不透明な支持基板としては、例えば、アルミ、ステンレス等の金属板、フィルムや不透明樹脂基板、セラミック製の基板等が挙げられる。 Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.
本発明の有機EL素子の発光の室温における外部取り出し効率は、1%以上であることが好ましく、より好ましくは5%以上である。ここに、外部取り出し量子効率(%)=有機EL素子外部に発光した光子数/有機EL素子に流した電子数×100である。 The external extraction efficiency at room temperature of light emission of the organic EL device of the present invention is preferably 1% or more, more preferably 5% or more. Here, the external extraction quantum efficiency (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.
また、カラーフィルター等の色相改良フィルター等を併用しても、有機EL素子からの発光色を蛍光体を用いて多色へ変換する色変換フィルターを併用してもよい。色変換フィルターを用いる場合においては、有機EL素子の発光のλmaxは480nm以下が好ましい。 In addition, a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor. In the case of using a color conversion filter, the λmax of light emission of the organic EL element is preferably 480 nm or less.
《封止》
本発明に用いられる封止手段としては、例えば、封止部材と電極、支持基板とを接着剤で接着する方法を挙げることができる。<Sealing>
As a sealing means used for this invention, the method of adhere | attaching a sealing member, an electrode, and a support substrate with an adhesive agent can be mentioned, for example.
封止部材としては、有機EL素子の表示領域を覆うように配置されておればよく、凹板状でも平板状でもよい。また透明性、電気絶縁性は特に問わない。 As a sealing member, it should just be arrange | positioned so that the display area | region of an organic EL element may be covered, and concave plate shape or flat plate shape may be sufficient. Further, transparency and electrical insulation are not particularly limited.
具体的には、ガラス板、ポリマー板・フィルム、金属板・フィルム等が挙げられる。ガラス板としては、特にソーダ石灰ガラス、バリウム・ストロンチウム含有ガラス、鉛ガラス、アルミノケイ酸ガラス、ホウケイ酸ガラス、バリウムホウケイ酸ガラス、石英等を挙げることができる。また、ポリマー板としては、ポリカーボネート、アクリル、ポリエチレンテレフタレート、ポリエーテルサルファイド、ポリサルフォン等を挙げることができる。金属板としては、ステンレス、鉄、銅、アルミニウム、マグネシウム、ニッケル、亜鉛、クロム、チタン、モリブテン、シリコン、ゲルマニウム及びタンタルからなる群から選ばれる一種以上の金属または合金からなるものが挙げられる。 Specific examples include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz. Examples of the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone. Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
本発明においては、素子を薄膜化できるということからポリマーフィルム、金属フィルムを好ましく使用することができる。さらには、ポリマーフィルムは、JIS K 7126−1987に準拠した方法で測定された酸素透過度が1×10-3ml/(m2・24hr・MPa)以下、JIS K 7129−1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が、1×10-3g/(m2・24h)以下以下のものであることが好ましい。In the present invention, a polymer film and a metal film can be preferably used because the element can be thinned. Furthermore, the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 × 10 −3 ml / (m 2 · 24 hr · MPa) or less, and a method according to JIS K 7129-1992. It is preferable that the water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) measured in (1) is 1 × 10 −3 g / (m 2 · 24 h) or less. .
封止部材を凹状に加工するのは、サンドブラスト加工、化学エッチング加工等が使われる。 For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.
接着剤として具体的には、アクリル酸系オリゴマー、メタクリル酸系オリゴマーの反応性ビニル基を有する光硬化及び熱硬化型接着剤、2−シアノアクリル酸エステル等の湿気硬化型等の接着剤を挙げることができる。また、エポキシ系等の熱及び化学硬化型(二液混合)を挙げることができる。また、ホットメルト型のポリアミド、ポリエステル、ポリオレフィンを挙げることができる。また、カチオン硬化タイプの紫外線硬化型エポキシ樹脂接着剤を挙げることができる。 Specific examples of the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups such as acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. be able to. Moreover, heat | fever and chemical curing types (two-component mixing), such as an epoxy type, can be mentioned. Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
なお、有機EL素子が熱処理により劣化する場合があるので、室温から80℃までに接着硬化できるものが好ましい。また、前記接着剤中に乾燥剤を分散させておいてもよい。封止部分への接着剤の塗布は市販のディスペンサーを使ってもよいし、スクリーン印刷のように印刷してもよい。 In addition, since an organic EL element may deteriorate by heat processing, what can be adhesive-hardened from room temperature to 80 degreeC is preferable. A desiccant may be dispersed in the adhesive. Application | coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.
また、有機層を挟み支持基板と対向する側の電極の外側に該電極と有機層を被覆し、支持基板と接する形で無機物、有機物の層を形成し封止膜とすることも好適にできる。この場合、該膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。さらに該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることが好ましい。これらの膜の形成方法については、特に限定はなく、例えば真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ−イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができる。 In addition, it is also preferable that the electrode and the organic layer are coated on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film. . In this case, the material for forming the film may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can. Further, in order to improve the brittleness of the film, it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials. The method for forming these films is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster-ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
封止部材と有機EL素子の表示領域との間隙には、気相及び液相では、窒素、アルゴン等の不活性気体やフッ化炭化水素、シリコンオイルのような不活性液体を注入することが好ましい。また真空とすることも可能である。また、内部に吸湿性化合物を封入することもできる。 In the gap between the sealing member and the display area of the organic EL element, an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil can be injected in the gas phase and liquid phase. preferable. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
吸湿性化合物としては、例えば、金属酸化物(例えば、酸化ナトリウム、酸化カリウム、酸化カルシウム、酸化バリウム、酸化マグネシウム、酸化アルミニウム等)、硫酸塩(例えば、硫酸ナトリウム、硫酸カルシウム、硫酸マグネシウム、硫酸コバルト等)、金属ハロゲン化物(例えば、塩化カルシウム、塩化マグネシウム、フッ化セシウム、フッ化タンタル、臭化セリウム、臭化マグネシウム、沃化バリウム、沃化マグネシウム等)、過塩素酸類(例えば、過塩素酸バリウム、過塩素酸マグネシウム等)等が挙げられ、硫酸塩、金属ハロゲン化物及び過塩素酸類においては無水塩が好適に用いられる。 Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, and the like), and anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
《保護膜、保護板》
有機層を挟み支持基板と対向する側の前記封止膜、あるいは前記封止用フィルムの外側に、素子の機械的強度を高めるために保護膜、あるいは保護板を設けてもよい。特に封止が前記封止膜により行われている場合には、その機械的強度は必ずしも高くないため、このような保護膜、保護板を設けることが好ましい。これに使用することができる材料としては、前記封止に用いたのと同様なガラス板、ポリマー板・フィルム、金属板・フィルム等を用いることができるが、軽量かつ薄膜化ということからポリマーフィルムを用いることが好ましい。《Protective film, protective plate》
In order to increase the mechanical strength of the element, a protective film or a protective plate may be provided on the outer side of the sealing film on the side facing the support substrate with the organic layer interposed therebetween or on the sealing film. In particular, when the sealing is performed by the sealing film, the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate. As a material that can be used for this, the same glass plate, polymer plate / film, metal plate / film, etc. used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
《光取り出し》
有機EL素子は空気よりも屈折率の高い(屈折率が1.7〜2.1程度)層の内部で発光し、発光層で発生した光のうち15%から20%程度の光しか取り出せないことが一般的に言われている。これは、臨界角以上の角度θで界面(透明基板と空気との界面)に入射する光は、全反射を起こし素子外部に取り出すことができないことや、透明電極ないし発光層と透明基板との間で光が全反射を起こし、光が透明電極ないし発光層を導波し、結果として光が素子側面方向に逃げるためである。《Light extraction》
The organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15% to 20% of the light generated in the light emitting layer. It is generally said. This is because light incident on the interface (interface between the transparent substrate and air) at an angle θ greater than the critical angle causes total reflection and cannot be taken out of the device, or between the transparent electrode or light emitting layer and the transparent substrate. This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.
この光の取り出しの効率を向上させる手法としては、例えば、透明基板表面に凹凸を形成し、透明基板と空気界面での全反射を防ぐ方法(米国特許第4,774,435号明細書)、基板に集光性を持たせることにより効率を向上させる方法(特開昭63−314795号公報)、素子の側面等に反射面を形成する方法(特開平1−220394号公報)、基板と発光体の間に中間の屈折率を持つ平坦層を導入し、反射防止膜を形成する方法(特開昭62−172691号公報)、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法(特開2001−202827号公報)、基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法(特開平11−283751号公報)等がある。 As a method for improving the light extraction efficiency, for example, a method of forming irregularities on the surface of the transparent substrate to prevent total reflection at the interface between the transparent substrate and the air (US Pat. No. 4,774,435), A method of improving efficiency by providing a light collecting property to a substrate (Japanese Patent Laid-Open No. 63-314795), a method of forming a reflective surface on a side surface of an element (Japanese Patent Laid-Open No. 1-220394), and light emission from a substrate A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index between the bodies (Japanese Patent Laid-Open No. 62-172691), a flat having a lower refractive index between the substrate and the light emitter than the substrate A method of introducing a layer (Japanese Patent Laid-Open No. 2001-202827), a method of forming a diffraction grating between any one of a substrate, a transparent electrode layer and a light emitting layer (including between the substrate and the outside) (Japanese Patent Laid-Open No. 11-283951) Gazette).
本発明においては、これらの方法を本発明の有機EL素子と組み合わせて用いることができるが、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法、あるいは基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法を好適に用いることができる。 In the present invention, these methods can be used in combination with the organic EL device of the present invention. However, a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any layers of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
本発明はこれらの手段を組み合わせることにより、さらに高輝度あるいは耐久性に優れた素子を得ることができる。 In the present invention, by combining these means, it is possible to obtain an element having higher luminance or durability.
透明電極と透明基板の間に低屈折率の媒質を光の波長よりも長い厚みで形成すると、透明電極から出てきた光は、媒質の屈折率が低いほど外部への取り出し効率が高くなる。 When a medium having a low refractive index is formed between the transparent electrode and the transparent substrate with a thickness longer than the wavelength of light, the light extracted from the transparent electrode has a higher extraction efficiency to the outside as the refractive index of the medium is lower.
低屈折率層としては、例えば、エアロゲル、多孔質シリカ、フッ化マグネシウム、フッ素系ポリマー等が挙げられる。透明基板の屈折率は一般に1.5〜1.7程度であるので、低屈折率層は屈折率がおよそ1.5以下であることが好ましい。また、さらに1.35以下であることが好ましい。 Examples of the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.
また、低屈折率媒質の厚みは媒質中の波長の2倍以上となるのが望ましい。これは低屈折率媒質の厚みが、光の波長程度になってエバネッセントで染み出した電磁波が基板内に入り込む膜厚になると、低屈折率層の効果が薄れるからである。 The thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
全反射を起こす界面もしくはいずれかの媒質中に回折格子を導入する方法は、光取り出し効率の向上効果が高いという特徴がある。この方法は回折格子が1次の回折や2次の回折といった所謂ブラッグ回折により、光の向きを屈折とは異なる特定の向きに変えることができる性質を利用して、発光層から発生した光のうち層間での全反射等により外に出ることができない光を、いずれかの層間もしくは、媒質中(透明基板内や透明電極内)に回折格子を導入することで光を回折させ、光を外に取り出そうとするものである。 The method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency. This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction and second-order diffraction. Light that cannot be emitted due to total internal reflection between layers is diffracted by introducing a diffraction grating in any layer or medium (in a transparent substrate or transparent electrode), and the light is removed. I want to take it out.
導入する回折格子は、二次元的な周期屈折率を持っていることが望ましい。これは発光層で発光する光はあらゆる方向にランダムに発生するので、ある方向にのみ周期的な屈折率分布を持っている一般的な1次元回折格子では、特定の方向に進む光しか回折されず、光の取り出し効率がさほど上がらない。しかしながら、屈折率分布を二次元的な分布にすることにより、あらゆる方向に進む光が回折され、光の取り出し効率が上がる。 The introduced diffraction grating desirably has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much. However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and light extraction efficiency is increased.
回折格子を導入する位置としては前述の通り、いずれかの層間もしくは媒質中(透明基板内や透明電極内)でもよいが、光が発生する場所である有機発光層の近傍が望ましい。 As described above, the position where the diffraction grating is introduced may be in any of the layers or in the medium (in the transparent substrate or in the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
このとき、回折格子の周期は媒質中の光の波長の約1/2〜3倍程度が好ましい。 At this time, the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
回折格子の配列は正方形のラチス状、三角形のラチス状、ハニカムラチス状等、2次元的に配列が繰り返されることが好ましい。 The arrangement of the diffraction grating is preferably two-dimensionally repeated, such as a square lattice, a triangular lattice, or a honeycomb lattice.
《集光シート》
本発明の有機EL素子は基板の光取り出し側に、例えば、マイクロレンズアレイ状の構造を設けるように加工したり、あるいは所謂集光シートと組み合わせることにより、特定方向、例えば、素子発光面に対し正面方向に集光することにより、特定方向上の輝度を高めることができる。<Condenser sheet>
The organic EL device of the present invention is processed on the light extraction side of the substrate so as to provide, for example, a microlens array structure, or combined with a so-called condensing sheet, for example, with respect to a specific direction, for example, the device light emitting surface. By condensing in the front direction, the luminance in a specific direction can be increased.
マイクロレンズアレイの例としては、基板の光取り出し側に一辺が30μmでその頂角が90度となるような四角錐を2次元に配列する。一辺は10〜100μmが好ましい。これより小さくなると回折の効果が発生して色付く、大きすぎると厚みが厚くなり好ましくない。 As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are two-dimensionally arranged on the light extraction side of the substrate. One side is preferably 10 to 100 μm. If it becomes smaller than this, the effect of diffraction will generate | occur | produce and color, and if too large, thickness will become thick and is not preferable.
集光シートとしては、例えば、液晶表示装置のLEDバックライトで実用化されているものを用いることが可能である。このようなシートとして、例えば、住友スリーエム社製輝度上昇フィルム(BEF)等を用いることができる。プリズムシートの形状としては、例えば、基材に頂角90度、ピッチ50μmの△状のストライプが形成されたものであってもよいし、頂角が丸みを帯びた形状、ピッチをランダムに変化させた形状、その他の形状であってもよい。 As the condensing sheet, for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used. As the shape of the prism sheet, for example, the base material may be formed by forming a △ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 μm, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.
また、発光素子からの光放射角を制御するために、光拡散板・フィルムを集光シートと併用してもよい。例えば、(株)きもと製拡散フィルム(ライトアップ)等を用いることができる。 Moreover, in order to control the light emission angle from a light emitting element, you may use together a light diffusing plate and a film with a condensing sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
《有機EL素子の作製方法》
本発明の有機EL素子の作製方法の一例として、陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極からなる有機EL素子の作製法を説明する。<< Method for producing organic EL element >>
As an example of the method for producing the organic EL device of the present invention, a method for producing an organic EL device comprising an anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode will be described.
まず適当な基体上に所望の電極物質、例えば、陽極用物質からなる薄膜を1μm以下、好ましくは10〜200nmの膜厚になるように、蒸着やスパッタリング等の方法により形成させ陽極を作製する。 First, a desired electrode material, for example, a thin film made of an anode material is formed on a suitable substrate by a method such as vapor deposition or sputtering so as to have a film thickness of 1 μm or less, preferably 10 to 200 nm, thereby producing an anode.
次に、この上に有機EL素子材料である正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層、正孔阻止層の有機化合物薄膜を形成させる。 Next, an organic compound thin film of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a hole blocking layer, which are organic EL element materials, is formed thereon.
これら各層の形成方法としては、前記のごとく蒸着法、ウェットプロセス(スピンコート法、キャスト法、インクジェット法、印刷法)等があるが、均質な膜が得られやすく、かつピンホールが生成しにくい等の点から、本発明においてはスピンコート法、インクジェット法、印刷法等のウェットプロセス(塗布法)による製膜が好ましい。 As a method for forming each of these layers, there are a vapor deposition method, a wet process (spin coating method, casting method, ink jet method, printing method), etc. as described above. In view of the above, in the present invention, film formation by a wet process (coating method) such as a spin coating method, an ink jet method, or a printing method is preferable.
本発明に係る有機EL材料を溶解または分散する液媒体としては、例えば、メチルエチルケトン、シクロヘキサノン等のケトン類、酢酸エチル等の脂肪酸エステル類、ジクロロベンゼン等のハロゲン化炭化水素類、トルエン、キシレン、メシチレン、シクロヘキシルベンゼン等の芳香族炭化水素類、シクロヘキサン、デカリン、ドデカン等の脂肪族炭化水素類、DMF、DMSO等の有機溶媒を用いることができる。また分散方法としては、超音波、高剪断力分散やメディア分散等の分散方法により分散することができる。 Examples of the liquid medium for dissolving or dispersing the organic EL material according to the present invention include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, toluene, xylene, and mesitylene. Aromatic hydrocarbons such as cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane, and organic solvents such as DMF and DMSO can be used. Moreover, as a dispersion method, it can disperse | distribute by dispersion methods, such as an ultrasonic wave, high shear force dispersion | distribution, and media dispersion | distribution.
これらの層を形成後、その上に陰極用物質からなる薄膜を1μm以下、好ましくは、50〜200nmの範囲の膜厚になるように、例えば、蒸着やスパッタリング等の方法により形成させ、陰極を設けることにより所望の有機EL素子が得られる。 After these layers are formed, a thin film made of a cathode material is formed thereon by a method such as vapor deposition or sputtering so as to have a thickness of 1 μm or less, preferably in the range of 50 to 200 nm. By providing, a desired organic EL element can be obtained.
また作製順序を逆にして、陰極、電子注入層、電子輸送層、発光層、正孔輸送層、正孔注入層、陽極の順に作製することも可能である。このようにして得られた多色の表示装置に、直流電圧を印加する場合には陽極を+、陰極を−の極性として電圧2〜40V程度を印加すると発光が観測できる。また交流電圧を印加してもよい。なお、印加する交流の波形は任意でよい。 In addition, it is also possible to reverse the production order and produce the cathode, the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer, the hole injection layer, and the anode in this order. When a DC voltage is applied to the multicolor display device thus obtained, light emission can be observed by applying a voltage of about 2 to 40 V with the positive polarity of the anode and the negative polarity of the cathode. An alternating voltage may be applied. The alternating current waveform to be applied may be arbitrary.
《用途》
本発明の有機EL素子は、表示装置、ディスプレイ、各種発光光源として用いることができる。発光光源として、例えば、照明装置(家庭用照明、車内照明)、時計や液晶用バックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるがこれに限定するものではないが、特に液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。<Application>
The organic EL element of the present invention can be used as a display device, a display, and various light sources. For example, lighting devices (home lighting, interior lighting), clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light Although the light source of a sensor etc. are mentioned, It is not limited to this, Especially, it can use effectively for the use as a backlight of a liquid crystal display device, and a light source for illumination.
本発明の有機EL素子においては、必要に応じ製膜時にメタルマスクやインクジェットプリンティング法等でパターニングを施してもよい。パターニングする場合は、電極のみをパターニングしてもよいし、電極と発光層をパターニングしてもよいし、素子全層をパターニングしてもよく、素子の作製においては、従来公知の方法を用いることができる。 In the organic EL device of the present invention, patterning may be performed by a metal mask, an ink jet printing method, or the like at the time of film formation, if necessary. In the case of patterning, only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire layer of the element may be patterned. In the fabrication of the element, a conventionally known method is used. Can do.
本発明の有機EL素子や本発明に係る化合物の発光する色は、「新編色彩科学ハンドブック」(日本色彩学会編、東京大学出版会、1985)の108頁の図4.16において、分光放射輝度計CS−1000(コニカミノルタセンシング社製)で測定した結果をCIE色度座標に当てはめたときの色で決定される。 The light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 4.16 on page 108 of “New Color Science Handbook” (edited by the Japan Color Society, University of Tokyo Press, 1985). It is determined by the color when the result measured with the total CS-1000 (manufactured by Konica Minolta Sensing) is applied to the CIE chromaticity coordinates.
また、本発明の有機EL素子が白色素子の場合には、白色とは、2度視野角正面輝度を上記方法により測定した際に、1000cd/m2でのCIE1931表色系における色度がX=0.33±0.07、Y=0.33±0.1の領域内にあることを言う。When the organic EL element of the present invention is a white element, white means that the chromaticity in the CIE1931 color system at 1000 cd / m 2 is X when the 2 ° viewing angle front luminance is measured by the above method. = 0.33 ± 0.07 and Y = 0.33 ± 0.1.
以下、実施例を挙げて本発明を具体的に説明するが、本発明はこれらに限定されるものではない。なお、実施例において「%」の表示を用いるが、特に断りがない限り「質量%」を表す。 EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto. In addition, although the display of "%" is used in an Example, unless otherwise indicated, "mass%" is represented.
実施例1
《有機EL素子1−1の作製》
陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm製膜した基板(NHテクノグラス社製NA−45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。Example 1
<< Production of Organic EL Element 1-1 >>
After patterning on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 100 nm of ITO (indium tin oxide) on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
この透明支持基板上に、ポリ(3,4−エチレンジオキシチオフェン)−ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を3000rpm、30秒でスピンコート法により製膜した後、200℃にて1時間乾燥し、膜厚30nmの第1正孔輸送層を設けた。 On this transparent support substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. After the film formation by spin coating, the film was dried at 200 ° C. for 1 hour to provide a first hole transport layer having a thickness of 30 nm.
この基板を窒素雰囲気下に移し、第1正孔輸送層上に、50mgの化合物Aを10mlのトルエンに溶解した溶液を1000rpm、30秒の条件下、スピンコート法により製膜した。180秒間紫外光を照射し、光重合・架橋を行った後、60℃で1時間真空乾燥し第2正孔輸送層とした。 This substrate was transferred to a nitrogen atmosphere, and a solution of 50 mg of compound A dissolved in 10 ml of toluene was formed on the first hole transport layer by spin coating at 1000 rpm for 30 seconds. After irradiating with ultraviolet light for 180 seconds to carry out photopolymerization / crosslinking, vacuum drying was performed at 60 ° C. for 1 hour to form a second hole transport layer.
次に、H−1(60mg)、D−1(12.0mg)をトルエン6mlに溶解した溶液を、1000rpm、30秒の条件下、スピンコート法により製膜した。 Next, a solution obtained by dissolving H-1 (60 mg) and D-1 (12.0 mg) in 6 ml of toluene was formed into a film by a spin coating method at 1000 rpm for 30 seconds.
続いて、この基板を真空蒸着装置の基板ホルダーに固定し、モリブデン製抵抗加熱ボートにBAlqを200mg入れ、真空蒸着装置に取り付けた。真空槽を4×10-4Paまで減圧した後、BAlqの入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/秒で前記電子輸送層の上に蒸着して、さらに膜厚40nmの電子輸送層を設けた。なお、蒸着時の基板温度は室温であった。Subsequently, this substrate was fixed to a substrate holder of a vacuum deposition apparatus, 200 mg of BAlq was put into a molybdenum resistance heating boat, and attached to the vacuum deposition apparatus. After reducing the vacuum chamber to 4 × 10 −4 Pa, the heating boat containing BAlq is energized and heated, and deposited on the electron transport layer at a deposition rate of 0.1 nm / sec. A 40 nm electron transport layer was provided. In addition, the substrate temperature at the time of vapor deposition was room temperature.
引き続き、フッ化リチウム0.5nm及びアルミニウム110nmを蒸着して陰極を形成し、白色の発光有機EL素子1−1を作製した。 Then, 0.5 nm of lithium fluoride and 110 nm of aluminum were vapor-deposited, the cathode was formed, and the white light emitting organic EL element 1-1 was produced.
《有機EL素子1−2〜1−19の作製》
有機EL素子1−1の作製において、発光層のドーパント化合物D−1、ホスト化合物H−1を表1に示す化合物に置き換えた以外は同様にして、有機EL素子1−2〜1−19を作製した。<< Production of Organic EL Elements 1-2 to 1-19 >>
In the production of the organic EL element 1-1, except that the dopant compound D-1 and the host compound H-1 in the light emitting layer were replaced with the compounds shown in Table 1, the organic EL elements 1-2 to 1-19 were changed. Produced.
《有機EL素子の評価》
得られた有機EL素子の評価に際しては、作製後の各有機EL素子の非発光面をガラスケースで覆い、厚み300μmのガラス基板を封止用基板として用いて、周囲にシール材としてエポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを上記陰極上に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止して、図3、図4に示すような照明装置を形成して評価した。<< Evaluation of organic EL elements >>
When evaluating the obtained organic EL element, the non-light emitting surface of each organic EL element after production was covered with a glass case, a glass substrate having a thickness of 300 μm was used as a sealing substrate, and an epoxy-based light was used as a sealant around the periphery. A curable adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) is applied, and this is overlaid on the cathode and brought into close contact with the transparent support substrate. UV light is irradiated from the glass substrate side to cure and seal Then, an illumination device as shown in FIGS. 3 and 4 was formed and evaluated.
図3は照明装置の概略図を示し、有機EL素子101はガラスカバー102で覆われている(なお、ガラスカバーでの封止作業は、有機EL素子101を大気に接触させることなく窒素雰囲気下のグローブボックス(純度99.999%以上の高純度窒素ガスの雰囲気下)で行った)。 FIG. 3 is a schematic diagram of the lighting device, and the organic EL element 101 is covered with a glass cover 102 (in addition, the sealing operation with the glass cover is performed in a nitrogen atmosphere without bringing the organic EL element 101 into contact with the atmosphere. (In a high purity nitrogen gas atmosphere with a purity of 99.999% or more).
図4は照明装置の断面図を示し、図4において、105は陰極、106は有機EL層、107は透明電極付きガラス基板を示す。なお、ガラスカバー102内には窒素ガス108が充填され、捕水剤109が設けられている。 4 shows a cross-sectional view of the lighting device. In FIG. 4, reference numeral 105 denotes a cathode, 106 denotes an organic EL layer, and 107 denotes a glass substrate with a transparent electrode. The glass cover 102 is filled with nitrogen gas 108 and a water catching agent 109 is provided.
(外部取り出し量子効率)
有機EL素子を室温(約23〜25℃)、2.5mA/cm2の定電流条件下による点灯を行い、点灯開始直後の発光輝度(L)[cd/m2]を測定することにより、外部取り出し量子効率(η)を算出した。ここで、発光輝度の測定はCS−1000(コニカミノルタセンシング製)を用いた。外部取り出し量子効率は有機EL素子1−19を100とする相対値で表した。(External quantum efficiency)
By lighting the organic EL element under a constant current condition of room temperature (about 23 to 25 ° C.) and 2.5 mA / cm 2 , and measuring the emission luminance (L) [cd / m 2 ] immediately after the start of lighting, The external extraction quantum efficiency (η) was calculated. Here, CS-1000 (manufactured by Konica Minolta Sensing) was used for measurement of light emission luminance. The external extraction quantum efficiency was expressed as a relative value with the organic EL element 1-19 as 100.
(駆動電圧)
駆動電圧とは、2.5mA/cm2で駆動した時の電圧で、比較の有機EL素子1−19の駆動電圧(V)からの差を求めた。(Drive voltage)
The drive voltage is a voltage when driven at 2.5 mA / cm 2 , and the difference from the drive voltage (V) of the comparative organic EL element 1-19 was determined.
駆動電圧(V)=有機EL素子1−19の駆動電圧(V)−本発明の有機EL素子の駆動電圧(V)
評価の結果を表1に示す。Drive voltage (V) = Drive voltage (V) of organic EL element 1-19−Drive voltage (V) of organic EL element of the present invention
The evaluation results are shown in Table 1.
表1から、本発明の有機EL素子は、比較の有機EL素子に比べ、高い発光効率と低い駆動電圧が達成できることが明らかである。 From Table 1, it is clear that the organic EL device of the present invention can achieve high luminous efficiency and low driving voltage compared to the comparative organic EL device.
実施例2
《有機EL素子2−1の作製》
陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm製膜した基板(NHテクノグラス社製NA−45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。Example 2
<< Preparation of Organic EL Element 2-1 >>
After patterning on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 100 nm of ITO (indium tin oxide) on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
この透明支持基板上に、ポリ(3,4−エチレンジオキシチオフェン)−ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を3000rpm、30秒でスピンコート法により製膜した後、200℃にて1時間乾燥し、膜厚30nmの第1正孔輸送層を設けた。 On this transparent support substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. After the film formation by spin coating, the film was dried at 200 ° C. for 1 hour to provide a first hole transport layer having a thickness of 30 nm.
この基板を窒素雰囲気下に移し、第1正孔輸送層上に、50mgの化合物Aを10mlのトルエンに溶解した溶液を1000rpm、30秒の条件下、スピンコート法により製膜した。180秒間紫外光を照射し、光重合・架橋を行った後、60℃で1時間真空乾燥し第2正孔輸送層とした。 This substrate was transferred to a nitrogen atmosphere, and a solution of 50 mg of compound A dissolved in 10 ml of toluene was formed on the first hole transport layer by spin coating at 1000 rpm for 30 seconds. After irradiating with ultraviolet light for 180 seconds to carry out photopolymerization / crosslinking, vacuum drying was performed at 60 ° C. for 1 hour to form a second hole transport layer.
次に、化合物B(60mg)、D−1(12.0mg)をトルエン6mlに溶解した溶液を、1000rpm、30秒の条件下、スピンコート法により製膜した。15秒間紫外光を照射し、光重合・架橋を行わせ、さらに真空中150℃で1時間加熱を行い、発光層とした。 Next, a solution obtained by dissolving Compound B (60 mg) and D-1 (12.0 mg) in 6 ml of toluene was formed into a film by spin coating under conditions of 1000 rpm and 30 seconds. Irradiated with ultraviolet light for 15 seconds to cause photopolymerization / crosslinking, and further heated in vacuum at 150 ° C. for 1 hour to obtain a light emitting layer.
さらに、化合物C(20mg)をトルエン6mlに溶解した溶液を、1000rpm、30秒の条件下、スピンコート法により製膜した。15秒間紫外光を照射し、光重合・架橋を行わせ、さらに真空中80℃で1時間加熱を行い、正孔阻止層とした。 Further, a solution of compound C (20 mg) dissolved in 6 ml of toluene was formed into a film by spin coating under conditions of 1000 rpm and 30 seconds. Ultraviolet light was irradiated for 15 seconds, photopolymerization / crosslinking was performed, and further heating was performed in vacuum at 80 ° C. for 1 hour to form a hole blocking layer.
続いて、この基板を真空蒸着装置の基板ホルダーに固定し、モリブデン製抵抗加熱ボートにAlq3を200mg入れ、真空蒸着装置に取り付けた。真空槽を4×10-4Paまで減圧した後、Alq3の入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/秒で前記電子輸送層の上に蒸着して、さらに膜厚40nmの電子輸送層を設けた。なお、蒸着時の基板温度は室温であった。Subsequently, this substrate was fixed to a substrate holder of a vacuum deposition apparatus, 200 mg of Alq 3 was placed in a molybdenum resistance heating boat, and attached to the vacuum deposition apparatus. After reducing the vacuum chamber to 4 × 10 −4 Pa, the heating boat containing Alq 3 is heated by heating, evaporated onto the electron transport layer at a deposition rate of 0.1 nm / second, and further coated with a film. An electron transport layer having a thickness of 40 nm was provided. In addition, the substrate temperature at the time of vapor deposition was room temperature.
引き続き、フッ化リチウム0.5nm及びアルミニウム110nmを蒸着して陰極を形成し、白色発光有機EL素子2−1を作製した。 Then, 0.5 nm of lithium fluoride and 110 nm of aluminum were vapor-deposited, the cathode was formed, and the white light emitting organic EL element 2-1 was produced.
《有機EL素子2−2〜2−13の作製》
有機EL素子2−1の作製において、発光層のドーパント化合物D−1、ホスト化合物H−1を表2に示す化合物に置き換えた以外は同様にして、有機EL素子2−2〜2−13を作製した。<< Production of Organic EL Elements 2-2 to 2-13 >>
In the production of the organic EL element 2-1, the organic EL elements 2-2 to 2-13 were similarly prepared except that the dopant compound D-1 and the host compound H-1 in the light emitting layer were replaced with the compounds shown in Table 2. Produced.
《有機EL素子の評価》
得られた有機EL素子について実施例1と同様に評価した。なお、外部取り出し量子効率は有機EL素子2−13を100とする相対値で表し、駆動電圧は有機EL素子2−13の駆動電圧(V)からの差を求めた。<< Evaluation of organic EL elements >>
The obtained organic EL device was evaluated in the same manner as in Example 1. The external extraction quantum efficiency was expressed as a relative value with the organic EL element 2-13 as 100, and the driving voltage was determined as a difference from the driving voltage (V) of the organic EL element 2-13.
評価の結果を表2に示す。 The evaluation results are shown in Table 2.
表2から、本発明の有機EL素子は、比較の有機EL素子に比べ、高い発光効率と低い駆動電圧が達成できることが明らかである。 From Table 2, it is clear that the organic EL device of the present invention can achieve high luminous efficiency and low driving voltage as compared with the comparative organic EL device.
実施例3
《白色発光素子及び白色照明装置の作製》
陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm製膜した基板(NHテクノグラス社製NA−45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。Example 3
<< Preparation of white light emitting element and white lighting device >>
After patterning on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 100 nm of ITO (indium tin oxide) on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
この透明支持基板上に、ポリ(3,4−エチレンジオキシチオフェン)−ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を3000rpm、30秒でスピンコート法により製膜した後、200℃にて1時間乾燥し、膜厚30nmの第1正孔輸送層を設けた。 On this transparent support substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. After the film formation by spin coating, the film was dried at 200 ° C. for 1 hour to provide a first hole transport layer having a thickness of 30 nm.
この基板を窒素雰囲気下に移し、第1正孔輸送層上に、50mgの化合物Aを10mlのトルエンに溶解した溶液を1000rpm、30秒の条件下、スピンコート法により製膜した。180秒間紫外光を照射し、光重合・架橋を行った後、60℃で1時間真空乾燥し第2正孔輸送層とした。 This substrate was transferred to a nitrogen atmosphere, and a solution of 50 mg of compound A dissolved in 10 ml of toluene was formed on the first hole transport layer by spin coating at 1000 rpm for 30 seconds. After irradiating with ultraviolet light for 180 seconds to carry out photopolymerization / crosslinking, vacuum drying was performed at 60 ° C. for 1 hour to form a second hole transport layer.
次に、化合物B(60mg)、Ir−9(3.0mg)、D−5(3.0mg)をトルエン6mlに溶解した溶液を用い、1000rpm、30秒の条件下、スピンコート法により製膜した。15秒間紫外光を照射し、光重合・架橋を行わせ、さらに真空中150℃で1時間加熱を行い、発光層とした。 Next, using a solution obtained by dissolving Compound B (60 mg), Ir-9 (3.0 mg), and D-5 (3.0 mg) in 6 ml of toluene, a film is formed by spin coating under conditions of 1000 rpm and 30 seconds. did. Irradiated with ultraviolet light for 15 seconds to cause photopolymerization / crosslinking, and further heated in vacuum at 150 ° C. for 1 hour to obtain a light emitting layer.
さらに、化合物C(20mg)をトルエン6mlに溶解した溶液を、1000rpm、30秒の条件下、スピンコート法により製膜した。15秒間紫外光を照射し、光重合・架橋を行わせ、さらに真空中80℃で1時間加熱を行い、正孔阻止層とした。 Further, a solution of compound C (20 mg) dissolved in 6 ml of toluene was formed into a film by spin coating under conditions of 1000 rpm and 30 seconds. Ultraviolet light was irradiated for 15 seconds, photopolymerization / crosslinking was performed, and further heating was performed in vacuum at 80 ° C. for 1 hour to form a hole blocking layer.
続いて、この基板を真空蒸着装置の基板ホルダーに固定し、モリブデン製抵抗加熱ボートにAlq3を200mg入れ、真空蒸着装置に取り付けた。真空槽を4×10-4Paまで減圧した後、Alq3の入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/秒で前記電子輸送層の上に蒸着して、さらに膜厚40nmの電子輸送層を設けた。なお、蒸着時の基板温度は室温であった。Subsequently, this substrate was fixed to a substrate holder of a vacuum deposition apparatus, 200 mg of Alq 3 was placed in a molybdenum resistance heating boat, and attached to the vacuum deposition apparatus. After reducing the vacuum chamber to 4 × 10 −4 Pa, the heating boat containing Alq 3 is heated by heating, evaporated onto the electron transport layer at a deposition rate of 0.1 nm / second, and further coated with a film. An electron transport layer having a thickness of 40 nm was provided. In addition, the substrate temperature at the time of vapor deposition was room temperature.
引き続き、フッ化リチウム0.5nm及びアルミニウム110nmを蒸着して陰極を形成し、白色発光有機EL素子を作製した。 Then, 0.5 nm of lithium fluoride and 110 nm of aluminum were vapor-deposited, the cathode was formed, and the white light emitting organic EL element was produced.
この素子に通電したところほぼ白色の光が得られ、照明装置として使用できることが分かった。 When this element was energized, almost white light was obtained, and it was found that it could be used as a lighting device.
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