JP5577644B2 - Radiation image detection apparatus and manufacturing method thereof - Google Patents

Description

  The present invention relates to a radiological image detection apparatus used for medical diagnosis apparatuses, non-destructive inspection devices, and the like, and a manufacturing method thereof.

  Conventionally, radiation images such as X-ray images have been widely used for medical diagnosis in medical practice. In particular, radiographic images using intensifying screen-film systems are still the world as an imaging system that combines high reliability and excellent cost performance as a result of high sensitivity and high image quality in the long history. Used in the medical field. However, the image information is so-called analog image information, and free image processing and instantaneous electric transmission cannot be performed like the digital image information that has been developed in recent years.

  In recent years, digital radiological image detection apparatuses represented by computed radiography (CR), flat panel radiation detectors (FPD), and the like have appeared. Since a digital radiographic image is obtained and an image can be displayed on an image display device such as a cathode tube or a liquid crystal panel, it is not always necessary to form an image on a photographic film. As a result, these digital radiographic image detection devices reduce the necessity of image formation by the silver halide photography method, and greatly improve the convenience of diagnosis work in hospitals and clinics.

  Here, computed radiography (CR) reads and digitizes a radiographic image read by an imaging plate by laser scanning, but requires a reading process, and is not sharp enough and has a spatial resolution. Is not enough.

On the other hand, in a flat panel radiation detector (FPD) that has been developed as a digital radiation image technology capable of directly obtaining a digital radiation image, a photodiode after converting radiation into light by a scintillator such as Gd ₂ O ₂ S or CsI There are a scintillator system that converts the X-rays into electric charges and a system that converts the X-rays directly into electric charges using an X-ray detection element represented by Se. The present invention relates to the former scintillator type FPD.

  As a scintillator type FPD, for example, Patent Document 1 discloses an FPD that is a combination of a scintillator panel and a photoelectric conversion element using a thin film transistor (TFT) and a charge coupled device (CCD).

  Further, in paragraphs [0039] to [0042] of Japanese Patent Laid-Open No. 2008-309770 (Patent Document 2), the flatness and rigidity of the scintillator panel are improved by providing a reinforcing plate, and the aluminum substrate of the scintillator panel is curved. A technique for preventing the scintillator from peeling off due to the above has been disclosed. The reinforcing plate of Patent Document 2 is provided so that the reinforcing plate covers the scintillator when viewed from the thickness direction of the aluminum substrate in order to prevent the image from becoming uneven due to the shadow of the reinforcing plate. Yes.

  Furthermore, Japanese Patent Application Laid-Open No. 2008-286785 (Patent Document 3) discloses a technique for defining an arrangement region of each layer constituting a radiological image detection apparatus for the purpose of preventing peeling between members constituting each layer. Has been.

JP 2005-114456 A JP 2008-309770 A JP 2008-286785 A

  However, in the technique described in Patent Document 2, the reinforcing plate is attached to an aluminum substrate of a scintillator panel provided with a moisture-resistant protective layer by, for example, a double-sided tape or an adhesive. There was a problem that the protective layer was damaged, the moisture resistance deteriorated, and the yield of non-defective products decreased. Furthermore, the technique described in Patent Document 2 has a problem in that the reinforcing plate is larger than the aluminum substrate and the panel is enlarged.

  Moreover, although the technique described in Patent Document 3 presents a solution to the problem of peeling between members due to the difference in coefficient of thermal expansion of the members, there is no mention regarding improvement of moisture resistance. .

  The present invention has been made in view of the above situation, and an object of the present invention is to provide a radiological image detection apparatus that is excellent in productivity and excellent in moisture resistance that prevents the occurrence of image defects.

The above object of the present invention can be achieved by the following constitution.
1. A radiation image in which at least a first substrate, a first adhesive layer, a second substrate, and a scintillator panel in which a scintillator layer is laminated in this order, and an output substrate having a photoelectric conversion element layer are adhered or bonded. In the detection device, the first substrate placement region includes the photoelectric conversion element layer placement region in the planar placement region of each layer of the scintillator panel, and the first substrate, A radiation image detection apparatus, wherein the first adhesive layer, the second substrate, and the scintillator layer are covered with a moisture-resistant protective layer.
and,
12 A radiation image in which at least a first substrate, a first adhesive layer, a second substrate, and a scintillator panel in which a scintillator layer is laminated in this order, and an output substrate having a photoelectric conversion element layer are adhered or bonded. In the detection device manufacturing method, in the arrangement region in the surface direction of each layer of the scintillator panel, the arrangement region of the first substrate includes the arrangement region of the photoelectric conversion element layer, and the first substrate. And after forming the scintillator panel by providing the first adhesive layer, the second substrate, and the scintillator layer , the first substrate, the first adhesive layer, and the second A method for manufacturing a radiographic image detection apparatus , comprising: providing a moisture-resistant protective layer so as to cover a substrate and the scintillator layer .

In addition, the present invention can exhibit better effects by adopting the following modes.
2. 2. The radiological image detection apparatus according to 1, wherein the arrangement region in the plane direction of the scintillator layer includes the arrangement region of the photoelectric conversion element layer and the arrangement region of the first substrate.
3. 3. The radiological image detection apparatus according to 2 above, wherein an arrangement region in the surface direction of the first adhesive layer is narrower than an arrangement region of the scintillator layer and wider than an arrangement region of the first substrate.
4). 4. The radiological image detection apparatus according to any one of 1 to 3 , wherein the moisture-resistant protective layer covers the entire surface of the first substrate on a radiation incident side surface.
5. 5. The radiographic image detection apparatus according to any one of 1 to 4, wherein the moisture-resistant protective layer covers a part of a surface of the first substrate on a radiation incident side.
6). 6. The radiological image detection apparatus according to any one of 1 to 5, wherein at least a radiation transmissive reflective layer is formed between the second substrate and the scintillator layer.
7). The radiographic image detection apparatus according to any one of 1 to 5, wherein a moisture absorption layer is attached to the first substrate by a second adhesive layer.
8). 8. The radiation image detecting apparatus according to any one of 1 to 7, wherein the moisture-resistant protective layer is a polyparaxylylene film formed by a CVD method.
9. 9. The radiological image detection apparatus according to any one of 1 to 8, wherein the scintillator layer is formed by a vapor deposition method.
10. 10. The radiological image detection apparatus according to any one of 1 to 9, wherein the scintillator layer includes a cesium halide phosphor.
11. 11. The radiographic image detection apparatus as described in 10 above, wherein the cesium halide phosphor contains thallium as an activator.

  ADVANTAGE OF THE INVENTION According to this invention, it is excellent in productivity and can provide the radiographic image detection apparatus excellent in moisture resistance which prevented generation | occurrence | production of the image defect.

  That is, the arrangement area of the first substrate includes the arrangement area of the photoelectric conversion element layer, so that the shadow of the first substrate is prevented from being reflected on the photoelectric conversion element, and the scintillator from the first substrate is prevented. Since the entire layer is covered with the moisture-proof protective layer after forming the layers, the moisture-proof protective layer is not damaged at the time of creation as in the prior art, and the productivity can be improved.

  Moreover, since the arrangement area of the scintillator layer includes the arrangement area of the first substrate, all of the radiation image light-converted by the scintillator layer can be taken into the photoelectric conversion element, and the size of the scintillator layer is detected. Since it is the maximum size of the apparatus, the overall size can be reduced.

Partially broken perspective view showing a schematic configuration of the radiation image detection apparatus 100 Schematic sectional view showing the layer structure of the radiation image detection apparatus Schematic explaining the relationship of the arrangement area of the layer configuration of the radiation image detection device 4A is a side view showing a schematic configuration of the vapor deposition apparatus 61, and FIG. 4B is a view taken along line AA in FIG. 4A.

In the radiation detection system, a subject is irradiated with radiation generated by a radiation generator, and the radiation transmitted through the subject is incident on a radiation image detection apparatus. The radiation image detection device detects radiation information from a subject, converts it into a digital image signal, and outputs it. The radiation used is, for example, an X-ray having a wavelength of about 1 × 10 ⁻¹⁰ m.

  The image signal converted by the radiation image detection apparatus is subjected to various image processing, displayed on an image display unit, or output onto a medium by various printers. Further, the image signal can be stored in a memory or transmitted to another department via a network.

  Hereinafter, a schematic structure according to the present invention of such a radiation image detection apparatus will be described with reference to FIG. The radiation image detection apparatus 100 includes an imaging panel 110 that receives irradiated radiation and converts radiation information into a digital image signal.

  The imaging panel 110 includes a scintillator panel 111 that emits fluorescence when irradiated with radiation, and a photoelectric conversion unit 112 that is provided below and photoelectrically converts fluorescence generated in the scintillator panel 111. As shown in FIG. 1, the photoelectric conversion units 112 are two-dimensionally arranged in a lattice shape, and each photoelectric conversion element corresponds to one pixel of a radiation image.

  The radiological image detection apparatus 100 further includes a control circuit 120 that controls the operation of the radiological image detection apparatus 100, a memory unit 130 that stores an image signal converted by the imaging panel 110, and an operation unit that switches the operation of the radiological image detection apparatus 100. 140, a display unit 150 that displays completion of radiographic image capturing preparation and writing of an image signal to the memory unit 130, a power supply unit 160 that supplies power necessary to obtain an image signal from the imaging panel 110, and the radiation image detection apparatus 100 And a communication connector 170 for communicating with the external image processing unit, and a housing 180 for housing them.

  Here, if the radiographic image detection apparatus 100 is provided with the power supply unit 160 and the memory unit 130 that stores the image signal of the radiographic image and the radiographic image detection apparatus 100 is detachable via the connector 170, the radiographic image detection is performed. It can be set as the portable structure which can carry the apparatus 100. FIG.

  The casing 180 is made of a lightweight and durable material such as aluminum or aluminum alloy. The radiation incident surface side of the housing 180 is formed of a material that easily transmits radiation, such as carbon fiber. Further, a radiation absorbing material such as a lead plate is provided on the back surface side opposite to the radiation incident surface, and radiation transmitted through the radiation image detecting device 100 and constituent materials of the radiation image detecting device 100 are generated by radiation absorption 2. Prevent leakage of secondary radiation outside the device.

  FIG. 2 is a cross-sectional view showing the layer structure of the imaging panel 110 of the radiological image detection apparatus of the present invention. The schematic diagram functionally bound to the left half includes a layer that can be added to the right half. The layer structure is shown.

  First, the functionally layered structure of the left half will be described.

  In the figure, radiation is incident from above. The imaging panel 110 is roughly composed of a stack of the scintillator panel 10 and the photoelectric conversion element substrate 20 from the upper radiation incident direction in the figure, and the scintillator panel 10 is in order from the radiation incident direction, the first substrate 11. The scintillator sheet 13 having the first adhesive layer 12, the second substrate 14, and the scintillator layer 15 is covered with a moisture-resistant protective layer 16 as a whole. The photoelectric conversion element substrate 20 has a configuration in which a diaphragm 21, a photoelectric conversion element layer 22, an output layer 23, and a third substrate 24 provided between the scintillator panel 10 and the third substrate 24 are stacked in order from the radiation incident direction. .

  Here, the scintillator panel 10 converts a radiographic image into light. As will be described later in the manufacturing method, the second substrate 14 is provided as a base for the scintillator layer 15, and the scintillator sheet 13 is used for both. Configure. The scintillator sheet 13 formed on the base is bonded to the first substrate 11 with the first adhesive layer 12. The first substrate 11 has a function of ensuring the strength and flatness of the scintillator panel 10. The moisture resistant protective layer 16 protects the entire scintillator panel 10 from moisture.

  Next, a specific layer configuration will be described on the right side of FIG. 2. On the scintillator layer 15 side of the second substrate 14, an intermediate layer 17 a for ensuring the smoothness of the second substrate, light extraction efficiency A reflective layer 17b for increasing the reflectance, an oxide layer 17c for improving reflectance and luminance, and a protective layer 17d for protecting the scintillator layer 15 are sequentially stacked. These are additional layers, but it is desirable to add them in order to improve the performance of the device. It is better to provide at least a reflective layer.

  Further, a moisture absorption layer 19 for absorbing moisture is bonded to the radiation incident side of the first substrate 12 by the second adhesive layer 18. The moisture absorption layer 19 is particularly effective when the moisture-resistant protective layer 16 is formed of a film and moisture in the atmosphere is taken into the inside when the film is sealed. The position of the moisture absorption layer 19 is not limited to the above position, and may be, for example, between the first substrate 11 and the first adhesive layer 12. In addition, the part shown with the symbol of P in the figure is a fused part when the moisture-resistant protective layer 16 is composed of two films and heat-sealed.

  The moisture resistant protective layer 16 is formed so as to substantially cover the entire scintillator panel 10 including the second adhesive layer 18 and the moisture absorbing layer 19.

  The photoelectric conversion element substrate 20 is provided on the surface opposite to the radiation incident surface of the scintillator panel 10, and in order from the scintillator panel 10 side, the diaphragm 21, the photoelectric conversion element layer 22, the image signal output layer 23, and the first 3 substrates 24.

  The diaphragm 21 is a buffer layer when the scintillator panel 10 and the photoelectric conversion element substrate 20 are in close contact with each other or bonded together.

  The photoelectric conversion element layer 22 includes a transparent electrode 22a, a charge generation layer 22b that generates electric charges when excited by electromagnetic waves transmitted through the transparent electrode 22a, and a counter electrode 22c that serves as a counter electrode for the transparent electrode 22a. These are arranged in this order from the diaphragm 21 side.

  Next, the operation of the radiological image detection apparatus 100 will be described. First, the radiation incident on the radiation image detection apparatus 100 enters from the scintillator panel 10 side of the imaging panel 110 toward the photoelectric conversion element substrate 20 side. The scintillator layer 15 in the scintillator panel 10 absorbs radiation energy and emits electromagnetic waves (light) corresponding to the intensity. Of the emitted electromagnetic wave, the electromagnetic wave incident on the photoelectric conversion element substrate 20 passes through the diaphragm 21 and the transparent electrode 22a of the photoelectric conversion element substrate 20, and reaches the charge generation layer 22b. Then, the electromagnetic wave is absorbed in the charge generation layer 22b, and a hole-electron pair (charge separation state) is formed according to the intensity.

  Thereafter, the generated charges (holes and electrons) are carried to different electrodes (transparent electrode 22a and counter electrode 22c) by an internal electric field generated by application of a bias voltage by the power supply unit 160, and flow as a photocurrent.

  Holes carried to the counter electrode 22c side are accumulated in a capacitor provided in the image signal output layer 23, and the accumulated holes drive a transistor connected to the capacitor to output an image signal. The output image signal is stored in the memory unit 130.

  FIG. 3 is a schematic diagram for explaining the arrangement region of the above layer configuration. This figure is a cross section of the layer structure, and shows the distance from the center line H parallel to the radiation incident direction to the end face of each layer.

  In FIG. 3, A is the distance from the center line H to the end face of the photoelectric conversion element layer 22, B is the distance from the center line H to the end face of the first substrate 11, and C is the end face of the scintillator layer 15. D is the distance from the center line H to the end face of the first adhesive layer 12.

  Here, that the arrangement area of the first substrate includes the arrangement area of the photoelectric conversion element layer is A <B in all directions of the center line H (in the direction parallel to the plane of FIG. 3 and in the direction perpendicular to the plane of the plane). It means that. Similarly, that the arrangement region of the scintillator layer includes the arrangement region of the photoelectric conversion element layer means A <C, and the arrangement region in the surface direction of the first adhesive layer is larger than the arrangement region of the scintillator layer. Narrow and wider than the arrangement area of the first substrate means B <D <C.

  By adopting such an arrangement relationship, it is possible to capture all of the photo-converted radiation image into the photoelectric conversion element and to reduce the size of the apparatus.

  In the relationship A <B <D <C, the difference between the distances A and B, B and C, and C and D is preferably 0.3 mm to 1.5 mm, and more preferably 0.5 mm to 1. 0 mm.

  Subsequently, each layer will be described in detail.

(Scintillator layer)
The scintillator layer (also referred to as “phosphor layer”) is a layer made of a scintillator (phosphor) that emits fluorescence when irradiated with radiation.

  That is, the scintillator absorbs the energy of incident radiation such as X-rays, and emits electromagnetic waves having a wavelength of 300 to 800 nm, that is, electromagnetic waves (light) ranging from ultraviolet light to infrared light centering on visible light. Refers to the body. When columnar crystals are used as the phosphor, the column diameter of the columnar crystals is preferably 2.0 to 20 μm, more preferably 3.0 to 15 μm. Moreover, it is preferable that the film thickness of a scintillator layer is 100-1000 micrometers, More preferably, it is 120-800 micrometers, Especially preferably, it is 140-600 micrometers.

  In the present invention, the filling rate of the scintillator layer is preferably 70 to 90%, more preferably 72 to 88%, and particularly preferably 75 to 85%. Here, the filling rate means a value obtained by dividing the actual mass of the scintillator layer by the theoretical density and the apparent volume. The degree of filling of the scintillator layer can be controlled by controlling the substrate temperature at the time of vapor deposition, or controlling the degree of vacuum by adjusting the vapor deposition rate or the amount of introduction of a carrier gas such as Ar. In the case of the coating method, the ratio between the phosphor and the binder can be adjusted, or the temperature, pressure, and speed during calendering can be adjusted.

  Further, the coefficient of variation of the filling rate of the scintillator layer is 20% or less, preferably 10% or less, more preferably 5% or less. As a result, the brightness and sharpness can be improved, and the occurrence of image defects due to temperature fluctuations can be prevented. The coefficient of variation of the filling rate is preferably as small as possible, but is usually 0.1% or more.

The variation coefficient of the filling rate is an index value indicating the degree of variation in the filling rate of the phosphor in the scintillator layer. The coefficient of variation of the filling rate is determined by measuring the filling rate in 100 sections generated by dividing the vertical and horizontal sections into 10 on the scintillator panel, and calculating the average filling rate D _av obtained from the filling rate in each measurement section and the standard deviation D of the filling rate. _It calculates by the following formula using _dev .

Coefficient of variation of filling degree = D _dev / D _av (%)
Where D _dev : Standard deviation of filling rate
D _av : Average filling rate In order to make the variation coefficient of the filling rate 20% or less, it can be performed by controlling the arrangement of the evaporation sources used in the scintillator layer manufacturing apparatus. For example, it can be performed by arranging a plurality of evaporation sources on the circumference of the circle, but it is more preferable that the evaporation sources are also arranged at the center of the circle. More preferably, the plurality of evaporation sources are arranged on the circumference of a plurality of concentric circles having different radii. Moreover, when forming a scintillator layer by the apply | coating method, it can carry out by controlling the slit shape of the coating device used at the time of application | coating by precision grinding | polishing.

(Scintillator layer, phosphor)
As a material for forming the scintillator layer, various known phosphor materials can be used, but cesium iodide (CsI) which is a cesium halide phosphor is preferable. Cesium iodide (CsI) has a relatively high conversion rate from X-rays to visible light, and phosphors can be easily formed into a columnar crystal structure by vapor deposition. Therefore, scattering of emitted light in the crystal is suppressed by the light guide effect. It is possible to increase the thickness of the scintillator layer (phosphor layer).

  However, since CsI alone is not sufficient in luminous efficiency, various activators are added. For example, as shown in Japanese Patent Publication No. 54-35060, a mixture of CsI and sodium iodide (NaI) at an arbitrary molar ratio can be mentioned. Further, as disclosed in, for example, Japanese Patent Application Laid-Open No. 2001-59899, CsI is vapor-deposited to form indium (In), thallium (Tl), lithium (Li), potassium (K), rubidium (Rb), sodium ( An activation material such as Na) can be simultaneously formed by sputtering.

  Moreover, as a raw material for forming a CsI scintillator layer containing thallium, an additive containing one or more types of thallium compounds and cesium iodide are preferably used. Thallium activated cesium iodide (CsI: Tl) is preferable because it has a broad emission wavelength from 400 nm to 750 nm.

As the thallium compound containing one or more types of thallium compounds, various thallium compounds (compounds having oxidation numbers of + I and + III) can be used. Preferred thallium compounds are thallium bromide (TlBr), thallium chloride (TlCl), thallium fluoride (TlF, TlF ₃ ), and the like.

  Further, the melting point of the thallium compound (melting point under normal temperature and normal pressure) is preferably in the range of 400 to 700 ° C. from the viewpoint of luminous efficiency. Moreover, it is preferable that the molecular weight of a thallium compound exists in the range of 206-300.

  In the scintillator layer, the content of the activator is preferably an optimal amount according to the target performance, but is preferably 0.01 to 20 mol% with respect to the content of cesium iodide, More preferably, it is 0.05-5 mol%.

Furthermore, in the present invention, various types other than the above-described CsI: Tl can be used. As another example,
Basic composition formula (I): M ^I X · aM ^II X ′ ₂ · bM ^III X ″ ₃ : zA
Alkali metal halide phosphors represented by the formula can be used.

In the above formula, M ^I represents at least one alkali metal selected from the group consisting of Li, Na, K, Rb and Cs, and M ^II represents Be, Mg, Ca, Sr, Ba, Ni, Cu, Zn and at least one rare earth metal or divalent metal selected from the group consisting cd, M ^III is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho Represents at least one rare earth element or trivalent metal selected from the group consisting of Er, Tm, Yb, Lu, Al, Ga and In. X, X ′ and X ″ each represent at least one halogen selected from the group consisting of F, Cl, Br and I, and A represents Y, Ce, Pr, Nd, Sm, Eu, Gd, Represents at least one rare earth element or metal selected from the group consisting of Tb, Dy, Ho, Er, Tm, Yb, Lu, Na, Mg, Cu, Ag, Tl and Bi, and a, b and z are Each represents a numerical value within the range of 0 ≦ a <0.5, 0 ≦ b <0.5, and 0 <z <1.0.

Further, M ^I in the basic composition formula (I) preferably contains at least Cs, X preferably contains at least I, and A is particularly preferably Tl or Na. . z is preferably a numerical value within the range of 1 × 10 ⁻⁴ ≦ z ≦ 0.1.

Also,
Basic compositional formula (II): M ^II FX: zLn
Rare earth activated alkaline earth metal fluoride halide phosphors are also preferred materials.

In the above formulas, M ^II is Ba, at least one rare earth metal selected from the group consisting of Sr and Ca, Ln is Ce, Pr, Sm, Eu, Tb, Dy, Ho, Nd, Er, Tm And at least one rare earth element selected from the group consisting of Yb. X represents at least one halogen selected from the group consisting of Cl, Br and I. Z represents a numerical value within a range of 0 <z ≦ 0.2. As M ^II in the above formula, Ba preferably accounts for more than half. Ln is particularly preferably Eu or Ce.

In addition, LnTaO ₄ : (Nb, Gd), Ln ₂ SiO ₅ : Ce, LnOX: Tm (Ln is a rare earth element), Gd ₂ O ₂ S: Tb, Gd ₂ O ₂ S: Pr, Ce, ZnWO ₄ , LuAlO ₃ : Ce, Gd ₃ Ga ₅ O ₁₂ : Cr, Ce, HfO _{2 and the} like can be mentioned.

  Here, in the present invention, the scintillator layer is provided on the second radiation transmissive substrate (second substrate) via a reflective layer, a protective layer, etc., and the first adhesive layer is provided on the second substrate side. Through which a first radiation transmitting substrate (first substrate) is provided to form a scintillator panel, and then a pixel comprising a photosensor and a TFT is two-dimensionally formed on the third substrate. A radiation image detection device is obtained by adhering or closely contacting the photoelectric conversion panel on which the portion is formed.

(First radiation transparent substrate)
The first radiation transmissive substrate (first substrate) according to the present invention is radiation transmissive, and various types of glass, polymer materials, metals, and the like can be used. The first substrate is affixed to the second substrate with a first adhesive layer (for example, a double-sided tape, a hot melt sheet, an adhesive, or the like) directly or through a functional layer such as a moisture absorbing layer as necessary. Yes. As the first substrate, (1) carbon fiber reinforced plastic (CFRP: Carbon Fiber Reinforced Plastics), (2) carbon board (carbonized and hardened charcoal and paper), (3) carbon substrate (graphite substrate) ), (4) a plastic substrate, (5) a glass substrate, (6) a substrate in which the substrates (1) to (5) are formed thinly and sandwiched with a foamed resin can be used.

  The thickness of the first substrate is preferably larger than the thickness of the second substrate. Thereby, the intensity | strength of the whole scintillator panel improves. The arrangement area of the first substrate needs to be wider than the arrangement area of the photoelectric conversion elements. Thereby, it is possible to prevent the shadow of the first substrate from being reflected, and as a result, it is possible to prevent the image from becoming uneven. At the same time, the scintillator panel can be reduced in size.

  About the edge part of a 1st board | substrate, it is preferable to taper or round (R is attached) over a corner | angular part or a perimeter. Thereby, there exists an effect that it becomes difficult to tear also when sealed.

(Second radiation transmissive substrate)
The second radiation transmissive substrate (second substrate) according to the present invention is a plate that is radiation transmissive and can carry a scintillator layer, and uses various glasses, polymer materials, metals, and the like. Can do.

  In particular, a polymer film containing polyimide or polyethylene naphthalate is suitable when a columnar scintillator is formed by a vapor phase method using cesium iodide as a raw material.

Furthermore, the second substrate is preferably a flexible polymer film having a thickness of 50 to 500 μm. Here, the “substrate having flexibility” means a substrate having an elastic modulus (E120) at 120 ° C. of 1000 to 6000 N / mm ² , and a polymer film containing polyimide or polyethylene naphthalate as the substrate. Is preferred.

  Note that the “elastic modulus” means the slope of the stress with respect to the strain amount in a region where the strain indicated by the standard line of the sample conforming to JIS-C2318 and the corresponding stress have a linear relationship using a tensile tester. Is what we asked for. This is a value called Young's modulus, and in the present invention, this Young's modulus is defined as an elastic modulus.

Substrate used in the present invention, the elastic modulus at the 120 ° C. as described above (E120) is preferably a ^{1000N / mm 2 ~6000N / mm 2} . More preferably ^{1200N / mm 2 ~5000N / mm 2} .

  The polymer film may be used alone, or may be laminated or mixed. Among them, as a particularly preferable polymer film, a polymer film containing polyimide or polyethylene naphthalate is preferable as described above.

(Reflective layer)
The reflection layer is for reflecting light emitted from the scintillator of the scintillator layer to increase the light extraction efficiency, and is formed directly on the second substrate or via an intermediate layer. The reflection layer is made of a material that reflects light from the scintillator layer and has radiation transparency, and is made of an element group consisting of Al, Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt, and Au. It is preferably formed of a material containing any element selected. In particular, it is preferable to use a metal thin film made of the above elements, for example, an Ag film, an Al film, or the like. Two or more such metal thin films may be formed.

  In addition, it is preferable that the thickness of a reflection layer is 0.005-0.3 micrometer from a viewpoint of emitted light extraction efficiency, More preferably, it is 0.01-0.2 micrometer.

(Oxide layer)
An oxide layer composed of at least one layer may be further provided between the reflective layer and the scintillator layer. By providing the oxide layer, the reflectance is improved and the luminance is improved. In particular, when a conductive substrate such as aluminum or carbon is used as the second substrate, an effect of preventing corrosion can be obtained.

The oxide layer preferably contains a metal oxide, and examples thereof include SiO ₂ and TiO ₂ . The oxide layer is more preferably composed of a plurality of oxide layers. The thickness of the oxide layer is preferably 0.005 to 0.3 μm, more preferably 0.01 to 0.2 μm, from the viewpoint of improving luminance and preventing corrosion.

(Middle layer)
In the present invention, an intermediate layer for imparting smoothness to the second substrate may be provided between the second substrate and the reflective layer. The intermediate layer is preferably a layer containing a resin. Specifically, as the resin, polyurethane, vinyl chloride copolymer, vinyl chloride-vinyl acetate copolymer, vinyl chloride-vinylidene chloride copolymer, vinyl chloride-acrylonitrile copolymer, butadiene-acrylonitrile copolymer, Polyamide resin, polyvinyl acetal, polyester, cellulose derivative (nitrocellulose, etc.), polyimide, polyamide, polyparaxylylene, styrene-butadiene copolymer, various synthetic rubber resins, phenol resin, epoxy resin, urea resin, melamine resin , Phenoxy resin, silicon resin, acrylic resin, urea formamide resin, and the like. Among them, it is preferable to use polyurethane, polyester, vinyl chloride copolymer, polyvinyl butyral, nitrocellulose, polyimide, and polyparaxylylene. A matting agent or filler may be added as necessary to control the surface properties and Young's modulus of the intermediate layer.

  The thickness of the intermediate layer is preferably 1.0 μm to 30 μm, more preferably 2.0 μm to 25 μm, and particularly preferably 5.0 μm to 20 μm.

Moreover, as means for providing the intermediate layer on the surface of the second substrate, there are means such as a bonding method and a coating method. Among these, the bonding method is performed using heating and a pressure roller, the heating condition is about 80 to 150 ° C., the pressing condition is 4.90 × 10 to 2.94 × 10 ² N / cm, and the conveyance speed is 0.1. -2.0 m / s is preferable.

(Protective layer)
The scintillator panel of the present invention preferably has a protective layer on the reflective layer provided on the second substrate. The thickness of the protective layer is preferably from 0.2 to 5.0 μm, more preferably from 0.5 to 4.0 μm, particularly preferably from 0.7 to 3.5 μm, from the viewpoint of suppressing light scattering. Preferably there is.

  An organic resin is preferably used for the protective layer, and specific examples of the organic resin include polyurethane, vinyl chloride copolymer, vinyl chloride-vinyl acetate copolymer, vinyl chloride-vinylidene chloride copolymer, vinyl chloride. -Acrylonitrile copolymer, butadiene-acrylonitrile copolymer, polyamide resin, polyvinyl acetal, polyester, cellulose derivative (nitrocellulose, etc.), polyimide, polyamide, polyparaxylylene, styrene-butadiene copolymer, various synthetic rubbers Examples thereof include resins, phenol resins, epoxy resins, urea resins, melamine resins, phenoxy resins, silicon resins, acrylic resins, urea formamide resins, and the like.

  Among them, it is preferable to use polyurethane, polyester, vinyl chloride copolymer, polyvinyl butyral, nitrocellulose, polyimide, and polyparaxylylene.

  Usually, in forming a scintillator by vapor deposition, the substrate temperature is 150 ° C to 250 ° C, but the protective layer contains an organic resin having a glass transition temperature of -20 ° C to 45 ° C. The protective layer effectively functions as an adhesive layer.

  Moreover, it is preferable that a protective layer is a light absorption layer, and it is preferable that the maximum absorption wavelength is 560-650 nm. The protective layer preferably contains at least one colorant of a pigment and a dye so that the maximum absorption wavelength is in the range of 560 to 650 nm. As a colorant having a maximum absorption wavelength between 560 and 650 nm, a purple to blue organic or inorganic colorant is preferably used.

Examples of purple to blue organic colorants are purple: dioxazine, blue: phthalocyanine blue, indanthrene blue, and the like. Examples of the purple-blue-blue-green inorganic colorants include ultramarine blue, cobalt blue, cerulean blue, chromium oxide, and TiO ₂ —ZnO—CoO—NiO pigments, but the present invention is not limited thereto.

  A particularly preferable colorant is a metal phthalocyanine pigment. Specific examples of the metal phthalocyanine pigment include copper phthalocyanine. However, other metal-containing phthalocyanine pigments such as those based on zinc, cobalt, iron, nickel, and other such metals can be used as long as the maximum absorption wavelength is in the range of 560-650 nm.

  Suitable phthalocyanine pigments may be unsubstituted or substituted, for example with one or more alkyl, alkoxy, halogen, or substituents typical of other phthalocyanine pigments. The crude phthalocyanine can be prepared by any of several methods known in the art, but preferably a metal donor, nitrogen donor (eg urea or phthalonitrile itself) of phthalic anhydride, phthalonitrile or derivatives thereof, Preferably, it can be produced by reacting in an organic solvent at any time in the presence of a catalyst.

  The pigment is preferably used by being dispersed in the organic resin forming the protective layer. Various dispersants can be used according to the organic resin and the pigment to be used. Examples of the dispersant include phthalic acid, stearic acid, caproic acid, and a lipophilic surfactant.

  Such a protective layer is formed by applying and drying a resin dissolved in a solvent, or by a CVD method.

(Adhesive layer)
As the adhesive layer that can be used for the first adhesive layer and the second adhesive layer according to the present invention, for example, a double-sided tape (matrix tape), a hot melt sheet, and an adhesive are used.

Examples of the hot melt resin used for the hot melt sheet include polyolefin resin, polyester, polyurethane, and epoxy hot melt resins. Although the thermal expansion coefficient of hot-melt resin changes with materials, it is 160-230 * 10 < ^-6 > / degreeC, for example. As the hot melt resin, for example, the hot melt resin described in [0024] to [0034] of JP-A-2006-78471 can be used. As the adhesive, an adhesive belonging to the group of acrylic, epoxy, and silicone can be used. The thermal expansion coefficient of the adhesive varies depending on the material, but is, for example, 110 × 10 ⁻⁶ / ° C. or less.

  The arrangement area in the surface direction of the first adhesive layer is preferably narrower than the arrangement area of the scintillator layer and wider than the arrangement area of the first radiation transmissive substrate.

(Hygroscopic layer)
In the present invention, the moisture absorption layer can be provided on the upper surface of the first substrate or between the first substrate and the second substrate. As the moisture absorption layer, it is preferable to use a resin layer containing a desiccant. For example, a dry keep (a product in which a resin such as plastic and a desiccant are integrated) can be used.

(Moisture resistant protective layer)
The moisture-resistant protective layer mainly focuses on protecting the scintillator layer. That is, cesium iodide (CsI) absorbs water vapor in the air and deliquesces when it is exposed with high hygroscopicity, and the main purpose is to prevent this. In the present invention, the moisture-resistant protective layer is configured not only to cover the scintillator layer but also to cover the entire surface including the other layers constituting the scintillator panel, and thus the moisture-resistant protective layer is damaged in the manufacturing process. As a result, the yield of non-defective products of the radiation image detection apparatus can be increased.

  The moisture-resistant protective layer can be formed using various materials, but most preferably, a polyparaxylylene film is formed by a CVD method. That is, a polyparaxylylene film can be formed on the entire surface of the scintillator sheet and the first substrate to form a moisture-resistant protective layer. Polyparaxylylene exhibits a very low moisture permeability and is excellent in interstitial permeability, and is therefore suitable as the moisture-resistant protective film of the present invention by forming a film by the CVD method.

  Further, the moisture-resistant protective layer may be formed by directly applying a coating solution for the moisture-resistant protective layer to the surface of the phosphor layer. Alternatively, a moisture-resistant protective layer separately formed in advance may be adhered to the phosphor layer. It may be sealed by wrapping. When an organic film is used as a moisture-resistant protective layer separately formed in advance, an example of the configuration includes a multilayer laminated material having a configuration of a protective layer (outermost layer) / a moisture-proof layer / a heat-welded layer (innermost layer). Further, each of the above layers can be multilayered as necessary.

  When using said organic film as a protective film, it is preferable that the scintillator panel is vacuum-sealed by the protective film. Vacuum sealing is possible by attaching a protective film to the top and bottom surfaces of the scintillator panel, reducing the pressure with a vacuum device, and then thermally fusing the end surfaces of the two protective films.

Furthermore, the moisture-resistant protective layer may be formed by laminating inorganic substances such as SiC, SiO ₂ , SiN, Al ₂ O ₃ by vapor deposition or sputtering.

  The thickness of the moisture-resistant protective layer is preferably 12 μm or more and 100 μm or less, more preferably 20 μm in consideration of the formation of voids, moisture resistance protection of the scintillator (phosphor) layer, sharpness, moisture resistance, workability, etc. As mentioned above, 60 micrometers or less are preferable.

  The haze ratio of the moisture-resistant protective layer is preferably 3% or more and 40% or less, and more preferably 3% or more and 10% or less in consideration of sharpness, radiation image unevenness, manufacturing stability, workability, and the like. It is more preferable. The haze ratio is an index representing the degree of cloudiness (the larger the numerical value, the greater the degree of cloudiness), and is a value represented by the ratio (%) of the scattered light transmittance to the total light transmittance.

  The light transmittance of the moisture-resistant protective layer is preferably 70% or more at 550 nm in consideration of photoelectric conversion efficiency, scintillator emission wavelength, etc., but a film having a light transmittance of 99% or more is difficult to obtain industrially. Therefore, the preferred range is substantially 99 to 70%.

The moisture permeability of the moisture-resistant protective layer is preferably 50 g / m ² · day (40 ° C./90% RH) (measured according to JIS Z0208, the same shall apply hereinafter) or less, taking into account the protection and deliquescence properties of the scintillator layer. Is preferably 10 g / m ² · day (40 ° C, 90% RH) or less, but a film with a water permeability of 0.01 g / m ² · day (40 ° C, 90% RH) or less is difficult to obtain industrially. Therefore, it is preferably substantially 0.01 g / m ² · day (40 ° C. · 90% RH) or more and 50 g / m ² · day (40 ° C. · 90% RH) or less, more preferably 0.1 g / m ^2. -Day (40 degreeC * 90% RH) or more and 10 g / m < ² > * day (40 degreeC * 90% RH) or less become a preferable range.

(Production method of scintillator panel)
A specific example of a manufacturing method for manufacturing the scintillator panel 10 of the present invention will be described with reference to the drawings.

  First, as a preparation step, an intermediate layer 17a, a reflective layer 17b, an oxide layer 17c, a protective layer 17d, and the like are sequentially formed on the second substrate 14 as necessary. The material of each layer and the production method are as described above.

  Next, a scintillator layer is formed. Prior to the description, a vapor deposition apparatus for forming the scintillator layer will be described.

  FIG. 4 is a diagram showing a schematic configuration of the vapor deposition apparatus 61. As shown in FIG. 4, the vapor deposition apparatus 61 includes a vacuum vessel 62, and the vacuum vessel 62 is provided with a vacuum pump 66 that exhausts the inside of the vacuum vessel 62 and introduces the atmosphere.

  A substrate holder 64 for holding the substrate B (second substrate 14) is provided near the upper surface inside the vacuum vessel 62.

  A phosphor layer is formed on the surface of the substrate B by a vapor deposition method. As the vapor deposition method, a vapor deposition method, a sputtering method, a CVD method, an ion plating method, or the like can be used. In the present invention, the vapor deposition method is particularly preferable.

  The substrate holder 64 is configured to hold the substrate B so that the surface of the substrate B on which the phosphor layer is formed faces the bottom surface of the vacuum vessel 62 and is parallel to the bottom surface of the vacuum vessel 62.

  The substrate holder 64 is preferably provided with a heater (not shown) for heating the substrate B. By heating the substrate B with this heater, the adhesion of the substrate B to the substrate holder 64 is enhanced and the film quality of the phosphor layer is adjusted. Further, the adsorbate on the surface of the substrate B is removed and removed, and an impurity layer is prevented from being generated between the surface of the substrate B and a phosphor to be described later.

  Moreover, you may have a mechanism (not shown) for circulating a heating medium or a heating medium as a heating means. This means is suitable when the substrate B is deposited while keeping the temperature of the substrate B at a relatively low temperature of 50 to 150 ° C.

  Moreover, you may have a halogen lamp (not shown) as a heating means. This means is suitable when the substrate B is deposited while keeping the temperature of the substrate B at a relatively high temperature such as 150 ° C. or higher.

  Further, the substrate holder 64 is provided with a substrate rotation mechanism 65 that rotates the substrate B in the horizontal direction. The substrate rotation mechanism 65 includes a substrate rotation shaft 67 that supports the substrate holder 64 and rotates the substrate B, and a motor (not shown) that is disposed outside the vacuum vessel 62 and serves as a drive source for the substrate rotation shaft 67. ing.

  Further, near the bottom surface inside the vacuum vessel 62, evaporation sources 63a and 63b are arranged at positions facing each other on the circumference of a circle centering on the center line perpendicular to the substrate B. In this case, the distance between the substrate B and the evaporation sources 63a and 63b is preferably 100 mm to 1500 mm, and more preferably 200 mm to 1000 mm. The distance between the center line perpendicular to the substrate B and the evaporation sources 63a and 63b is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm.

  In the vapor deposition apparatus of the present invention, it is possible to provide three or more evaporation sources, and each evaporation source may be arranged at equal intervals or at different intervals. Further, the radius of the circle centered on the center line perpendicular to the substrate B can be arbitrarily determined. In the present invention, it is preferable that a plurality of evaporation sources are arranged on the circumference of a circle. However, the evaporation source 63c is also arranged at the center of the circle, and a plurality of evaporation sources are arranged on a plurality of concentric circles. Thus, even when used for a large-sized panel such as an FPD, the variation coefficient of the phosphor filling rate of the scintillator layer can be 20% or less, and the impact resistance and moisture resistance can be improved. .

  The evaporation sources 63a and 63b contain phosphors and are heated by a resistance heating method. Therefore, the evaporation sources 63a and 63b may be composed of an alumina crucible around which a heater is wound, or a boat or a heater made of a refractory metal. Also good. In addition to the resistance heating method, the method of heating the phosphor may be a method such as heating by an electron beam or heating by high frequency induction. In view of the fact that it can be applied to many substances, a method in which a current is directly applied and resistance heating is performed, and a method in which a crucible is indirectly resistance heated with a surrounding heater is preferable. Further, the evaporation sources 63a and 63b may be molecular beam sources by a molecular source epitaxial method.

  Further, between the evaporation sources 63a and 63b and the substrate B, a shutter 68 for blocking the space from the evaporation sources 63a and 63b to the substrate B is provided so as to be openable and closable in the horizontal direction. In the sources 63a and 63b, substances other than the target substance attached to the surface of the phosphor can be prevented from evaporating at the initial stage of vapor deposition and adhering to the substrate B.

  According to the manufacturing method using the above-described vapor deposition apparatus 61, by providing a plurality of evaporation sources 63a and 63b, the overlapping portions of the vapor flows of the evaporation sources 63a and 63b are rectified and vapor-deposited on the surface of the substrate B, which will be described later. The crystallinity of the phosphor can be made uniform. At this time, as the number of evaporation sources is increased, the vapor flow is rectified at more locations, so that the crystallinity of the phosphor can be made uniform in a wider range. Further, by disposing the evaporation sources 63a and 63b on the circumference of a circle centered on the center line perpendicular to the substrate B, the effect that the crystallinity becomes uniform due to the rectification of the vapor flow is obtained. Can be obtained isotropically.

  Further, the phosphor can be deposited more uniformly on the surface of the substrate B by performing phosphor deposition described later while rotating the substrate B by the substrate rotating mechanism 65.

  A scintillator layer is formed by the vapor deposition apparatus 61 described above. First, the second substrate 14 (the intermediate layer 17a, the reflective layer 17b, the oxide layer 17c, the protective layer 17d, and the like provided in the preparation process) is attached to the substrate holder 64. Further, in the vicinity of the bottom surface of the vacuum vessel 62, evaporation sources 63a and 63b are arranged on the circumference of a circle centering on a center line perpendicular to the second substrate 14, and phosphors to be evaporated (cesium iodide and iodine). A mixture containing thallium fluoride).

  Next, the vacuum pump 66 is operated to evacuate the inside of the vacuum vessel 62, and the inside of the vacuum vessel 62 is brought to a vacuum atmosphere of 0.1 Pa or less. Here, “under vacuum atmosphere” means under a pressure atmosphere of 100 Pa or less, and preferably under a pressure atmosphere of 0.1 Pa or less.

  Thereafter, an inert gas such as argon is introduced into the vacuum vessel 62, and the inside of the vacuum vessel 62 is maintained in a vacuum atmosphere of 0.1 Pa to 5 Pa. Then, the heater of the substrate holder 64 and the motor of the substrate rotation mechanism 65 are driven, and the second substrate 14 attached to the substrate holder 64 is rotated while being heated while facing the evaporation source 63.

  In this state, a current is passed from the electrode to the evaporation source 63, and the mixture containing cesium iodide and thallium iodide is heated at about 700 to 800 ° C. for a predetermined time to evaporate the mixture.

  As a result, innumerable columnar crystals are sequentially grown on the surface of the substrate 14 to form the scintillator layer 15 having a desired thickness.

  As temperature which heats a vapor deposition source, 500 to 800 degreeC is preferable, and especially 630 to 750 degreeC is preferable. The substrate temperature is preferably 100 ° C to 250 ° C, and particularly preferably 150 ° C to 250 ° C. By setting the substrate temperature within this range, the shape of the columnar crystal is improved and the luminance characteristics are improved.

Note that the phosphor layer can be formed by performing the process of growing the phosphor on the surface of the substrate 14 in a plurality of times. In the vapor deposition method, the vapor deposition target may be cooled or heated as necessary during vapor deposition. Furthermore, the phosphor layer may be heat-treated (annealed) after the vapor deposition. In the vapor deposition method, reactive vapor deposition may be performed in which vapor deposition is performed by introducing a gas such as O ₂ or H ₂ as necessary.

  Next, a method for producing the scintillator panel 10 using the scintillator sheet 13 produced as described above will be described.

  First, the adhesive layer 12 is affixed to the manufactured scintillator sheet 13, and the 1st board | substrate 11 (glass substrate etc.) is mounted in alignment and pressed and it adhere | attaches on it. Finally, the moisture resistant protective layer 16 is formed. As described above, the moisture-resistant protective layer 16 forms a polyparaxylylene film by a CVD method.

  In the above description, an example in which the moisture-resistant protective layer covers the entire surface of the scintillator panel including the first substrate is shown. However, when the first substrate is made of a material such as a glass plate that does not allow moisture to pass, A moisture-resistant protective layer may be formed except for the upper surface side of one substrate. That is, the moisture-resistant protective layer covers the lower surface of the scintillator layer (photoelectric conversion element layer side) and the end surface of each layer constituting the scintillator panel, and the upper surface side of the first substrate can be opened. In such a configuration, a mask is provided on the upper surface of the first substrate when the moisture-resistant protective layer is formed, and the mask is removed after the moisture-resistant protective layer is formed.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in detail, this invention is not limited to these.

(Production of reflective layer)
A 125 μm-thick polyimide film (UPILEX-125S made by Ube Industries) was used as the second substrate, and aluminum was sputtered thereon to form a reflective layer (0.02 μm), and then an SiO ₂ film (0.08 μm) A film and a TiO ₂ film (0.05 μm) were formed.

(Preparation of protective layer)
Byron 200 (Toyobo Co., Ltd .: Polyester resin, Tg: 67 ° C.) 100 parts by weight Hexamethylene diisocyanate 3 parts by weight Phthalocyanine blue 0.1 part by weight Methyl ethyl ketone (MEK) 100 parts by weight Toluene 100 parts by weight The mixture was dispersed for 15 hours in a bead mill to obtain a coating solution for coating a protective layer.

  This coating solution was applied to the reflective layer surface of the substrate by an extrusion coater so that the dry film thickness was 2.5 μm.

(Formation of scintillator layer)
The said board | substrate which provided the reflection layer and the protective layer in the board | substrate holder provided with the board | substrate rotation mechanism was installed. Next, the phosphor raw material (CsI: 0.8 Tl mol%) is filled in the evaporation source crucible as an evaporation material, and the eight evaporation source crucibles are located near the bottom surface inside the vacuum container and are perpendicular to the substrate. It was arranged on the circumference of a circle centered on. At this time, the distance between the substrate and the evaporation source was adjusted to 400 mm, and the distance between the center line perpendicular to the substrate and the evaporation source was adjusted to 300 mm. Further, the eight shielding plates are arranged on the line connecting the evaporation source and the central point of the surface of the substrate facing the evaporation source so that the height and position of the shielding plate are in contact with each other, The range of the incident angle when the phosphor is deposited on the substrate is limited. Next, four evaporation source crucibles were arranged on the circumference of a circle centered on the center line perpendicular to the substrate, near the bottom surface inside the vacuum vessel. At this time, the distance between the substrate and the evaporation source was adjusted to 400 mm, and the distance between the center line perpendicular to the substrate and the evaporation source was adjusted to 150 mm. Further, one evaporation source crucible was arranged in the vicinity of the bottom surface inside the vacuum vessel and at the center of a circle centered on the center line perpendicular to the substrate.

  Subsequently, the inside of the vacuum vessel was once evacuated, Ar gas was introduced and the degree of vacuum was adjusted to 0.02 Pa, and then the substrate temperature was maintained at 50 ° C. while rotating the substrate at a speed of 10 rpm. Next, the inside of the crucible was raised to a predetermined temperature by resistance heating, and after deposition of the phosphor was started, the substrate temperature was raised to 200 ° C., and the film thickness of the phosphor layer (CsI: 0.8 Tl mol%) became 470 μm. At that point, the deposition was terminated.

(Create scintillator panel)
After the vapor deposition, the scintillator sheet on which the scintillator layer was formed was cut into a 430.0 mm × 430.0 mm square shape. Next, a glass substrate (429) was prepared using a hot melt sheet (429.5 mm × 429.5 mm, a thickness of 50 μm, and hirodyne 7544 (manufactured by Hirodine Industries) as a hot melt resin mainly composed of an ethylene vinyl acetate copolymer). 0.0 mm × 429.0 mm, thickness is 0.5 mm, and roundness (R) is attached over the entire circumference of the end. Thereafter, a moisture-resistant protective layer made of a polyparaxylylene film having a thickness of 15 μm was provided on the entire surface by CVD.

  The scintillator panel was replaced with a PaxScan2520 (Varian FPD) scintillator panel and set as an apparatus 101. The number of image defects and moisture resistance of the apparatus 101 were evaluated by the methods described later. In addition, the arrangement area of the photoelectric conversion elements was a quadrangular shape, and was adjusted so as to have the size described in Table 1.

(Devices 102 to 103)
The device 101 was manufactured in the same manner as the device 101 except that the thickness of the scintillator layer was changed as shown in Table 1.

(Device 104)
In the production of the device 101, when providing the moisture-resistant protective layer of the scintillator panel, a mask member is provided on the surface opposite to the scintillator layer side (radiation incident side) of the glass substrate, and then a polyparaffin having a thickness of 15 μm is formed on the entire surface by CVD. A xylylene film was provided. Thereafter, by removing the mask member, a moisture-resistant protective layer made of a polyparaxylylene film was provided in addition to the portion other than the upper surface (surface on the radiation incident side) of the glass substrate. Except this point, the apparatus is the same as the apparatus 101.

(Device 105)
The device 104 was manufactured in the same manner as the device 104 except that the thickness of the scintillator layer was changed as shown in Table 1.

(Device 106)
In the production of the scintillator panel of the apparatus 101, a moisture-resistant protective layer made of a polyparaxylylene film having a thickness of 15 μm was provided on the entire surface by CVD before the glass substrate was brought into close contact. Then, it produced similarly to the apparatus 101 except having stuck the glass substrate with the hot-melt sheet.

(Apparatus 107)
The device 101 was manufactured in the same manner as the device 101 except that the arrangement area of the photoelectric conversion elements of PaxScan 2520 was changed as shown in Table 1.

(Device 108)
The device 101 was manufactured in the same manner as the device 101 except that the glass substrate was not used.

<Evaluation>
<Evaluation of image defects>
The number of image defects generated by setting the scintillator panel was measured from the 12-bit output data. Here, the image defect is a pixel showing a signal of 90% or less and 110% or more of the average signal of the image. As the number of image defects, the number per 500 pixels × 500 pixels was measured.

<Evaluation of moisture resistance>
The obtained scintillator panel was left in an environment of 70 ° C./90% for 3 days, and the brightness deterioration range after being left was displayed as a relative value with the value before being left as 100. Evaluation of luminance was performed by irradiating an X-ray with a voltage of 80 kVp from the back surface (surface on which the scintillator layer was not formed) of the sample, detecting image data with an FPD provided with a scintillator, and setting the average signal value of the image as the emission luminance.

  The results are shown in Table 1. From Table 1, it can be seen that the radiological image detection apparatus of the present invention is small in size, free from image defects, and excellent in moisture resistance.

DESCRIPTION OF SYMBOLS 10, 111 Scintillator panel 11 1st board | substrate 12 1st adhesion layer 13 scintillator sheet 14 2nd board | substrate 15 scintillator layer 16 moisture-resistant protective layer 17a intermediate | middle layer 17b reflective layer 17c oxide layer 17d protective layer 18 2nd adhesion layer 19 Hygroscopic layer 20 Photoelectric conversion element substrate 21 Separator 22 Photoelectric conversion element layer 22a Transparent electrode 22b Charge generation layer 22c Counter electrode 23 Output layer 24 Third substrate 61 Deposition device 62 Vacuum vessel 63, 63a, 63b, 63c Evaporation source (covered Filling member)
64 Substrate holder 65 Substrate rotation mechanism 66 Vacuum pump 67 Substrate rotation axis 68 Shutter 100 Radiation image detection device 110 Imaging panel

Claims (12)

A radiation image in which at least a first substrate, a first adhesive layer, a second substrate, and a scintillator panel in which a scintillator layer is laminated in this order, and an output substrate having a photoelectric conversion element layer are adhered or bonded. A detection device,
In the arrangement region in the surface direction of each layer of the scintillator panel, the arrangement region of the first substrate includes the arrangement region of the photoelectric conversion element layer, and the first substrate, the first adhesive layer, The radiographic image detection apparatus, wherein the second substrate and the scintillator layer are covered with a moisture-resistant protective layer.   The radiographic image detection apparatus according to claim 1, wherein the arrangement region in the plane direction of the scintillator layer includes the arrangement region of the photoelectric conversion element layer and the arrangement region of the first substrate. .   The radiographic image detection apparatus according to claim 2, wherein an arrangement area in the surface direction of the first adhesive layer is narrower than an arrangement area of the scintillator layer and wider than an arrangement area of the first substrate. The moisture-resistant protective layer, a radiation image detection apparatus according to any one of claims 1 to 3, characterized in that covers the entire surface in the plane of the radiation incident side of the first substrate.   5. The radiographic image detection apparatus according to claim 1, wherein the moisture-resistant protective layer covers a part of a surface of the first substrate on a radiation incident side. 6.   6. The radiological image detection apparatus according to claim 1, wherein at least a radiation transmissive reflective layer is formed between the second substrate and the scintillator layer. 7.   The radiographic image detection apparatus according to claim 1, wherein a moisture absorption layer is attached to the first substrate by a second adhesive layer.   The radiographic image detection apparatus according to claim 1, wherein the moisture-resistant protective layer is a polyparaxylylene film formed by a CVD method.   The radiographic image detection apparatus according to claim 1, wherein the scintillator layer is formed by a vapor deposition method.   The radiographic image detection apparatus according to claim 1, wherein the scintillator layer includes a cesium halide phosphor.   The radiographic image detection apparatus according to claim 10, wherein the cesium halide phosphor contains thallium as an activator. A radiation image in which at least a first substrate, a first adhesive layer, a second substrate, and a scintillator panel in which a scintillator layer is laminated in this order, and an output substrate having a photoelectric conversion element layer are adhered or bonded. A method for manufacturing a detection device, comprising:
In the arrangement region in the surface direction of each layer of the scintillator panel, the arrangement region of the first substrate includes the arrangement region of the photoelectric conversion element layer, and the first substrate, the first adhesive layer, After forming the scintillator panel by providing the second substrate and the scintillator layer , the first substrate, the first adhesive layer, the second substrate, and the scintillator layer are covered. A method for manufacturing a radiation image detection apparatus, comprising providing a moisture-resistant protective layer as described above.

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