JP5422078B1 - High frequency circuit module - Google Patents

Abstract

A high frequency circuit module having a high mounting density is provided.
A high frequency circuit module includes an RFIC that performs transmission processing and reception processing of a high frequency signal, a power amplifier IC that amplifies a transmission signal from the RFIC, a transmission signal that is output from the power amplifier IC to an antenna, and an antenna. Duplexers 110 and 120 for separating received signals input from the RFIC 160 to the RFIC 160, one or both of the RFIC 160 and the power amplifier IC 155 are embedded in the circuit board 200, and the duplexers 110 and 120 are connected to the RFIC 160 and the power. It is arranged between the amplifier IC 155.
[Selection] Figure 6

Description

  The present invention relates to a high-frequency circuit module in which a high-frequency IC, a power amplifier IC, and a duplexer are mounted on a circuit board, and particularly to an arrangement structure of each component.

  In recent years, as represented by a multi-function mobile phone called a so-called smart phone, the multi-function and miniaturization of the mobile phone have been attempted. In such a cellular phone, a high-frequency circuit module in which various components necessary for transmitting and receiving a high-frequency signal are mounted on a circuit board is mounted on a motherboard (see, for example, Patent Document 1). The high-frequency circuit module described in Patent Document 1 includes a high-frequency IC that performs transmission processing and reception processing of a high-frequency signal, a power amplifier IC that powers the transmission signal, a transmission filter, a reception filter, a high-frequency switch, and the like on a circuit board. ing. The output signal of the power amplifier IC is sequentially transmitted from the antenna via a transmission matching circuit, a transmission filter, and a high frequency switch. On the other hand, the reception signal from the antenna is sequentially input to the high frequency IC via the high frequency switch, the reception filter, and the reception matching circuit. Here, the signal line through which the transmission signal from the high frequency IC to the high frequency switch passes and the signal line through which the reception signal from the high frequency switch to the high frequency IC pass are formed on the circuit board so as not to cross each other and to be close to each other. Has been. Patent Document 2 discloses a circuit that is not related to the operation of W-CDMA between the shortest distance between a circuit system that handles W-CDMA RF transmission signals and a reception circuit that handles W-CDMA RF reception signals. A multi-mode high-frequency circuit that can reduce signal interference between a W-CDMA transmission circuit and a reception circuit by arranging a GSM circuit system is described.

Japanese Patent Laid-Open No. 2005-198051 JP 2006-340257 A

  However, the prior art has a limit to meet the recent demand for further downsizing and higher density. In the configuration described in Patent Document 1, since the power amplifier IC is disposed in the immediate vicinity of the high frequency IC, the signal line for the reception signal passes through the vicinity of the power amplifier IC as the size and density of the power amplifier IC are increased. . As a result, there is a problem that noise and leakage signals generated in the power amplifier IC are mixed in the receiving circuit of the high frequency IC. In the configuration described in Patent Document 2, when the W-CDMA block as the first communication method is confirmed, the W-PA-IC (121) corresponding to the power amplifier IC is separated from the high frequency IC (310), but the duplexer ( 100) is distant from the high frequency IC (310), so that there is a problem that noise generated in the power amplifier IC, leakage signals, etc. are mixed into the reception circuit of the high frequency IC in the reception signal that has passed through the duplexer (100). It was.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide a high-frequency circuit module having a high mounting density.

  In order to achieve the above object, a high-frequency circuit module according to the present invention includes a circuit board in which insulator layers and conductor layers are alternately stacked, and a high-frequency signal transmission process and a reception process that are mounted on the circuit board. A high frequency IC, a power amplifier IC mounted on a circuit board for amplifying a transmission signal from the high frequency IC, a duplexer for separating a transmission signal output from the power amplifier IC to the antenna and a reception signal input from the antenna to the high frequency IC One or both of the high-frequency IC and the power amplifier IC are embedded in the circuit board, and the duplexer is disposed between the high-frequency IC and the power amplifier IC when viewed through the circuit board from above. It is characterized by.

  According to the present invention, the signal line for inputting the reception signal from the duplexer to the high frequency IC is not located near the power amplifier IC. Further, the length of the signal line for inputting the received signal from the duplexer to the high frequency IC can be shortened. As a result, it becomes easy to reduce the size and increase the density while preventing noise from entering the receiving circuit of the high-frequency IC. The transmission signal output from the high frequency IC passes through the vicinity of the duplexer and is input to the power amplifier IC. However, since the transmission signal is before power amplification, the influence on the duplexer and other circuits is extremely small. On the other hand, since the power amplifier IC and the duplexer are close to each other, the length of the signal line for transmitting the transmission signal after power amplification can be shortened. That is, the signal line for transmitting the signal amplified by the power amplifier IC to the duplexer can be made shorter than the signal line for transmitting the signal before amplification output from the high frequency IC. As a result, power loss and radiation noise can be reduced. The duplexer may be mounted on the circuit board or embedded in the circuit board.

  As an example of a preferred aspect of the present invention, a ground electrode is formed on the bottom surface of the circuit board, the power amplifier IC is embedded in the circuit board, and the heat dissipation electrode of the power amplifier IC is interposed via via conductors. Examples thereof include those characterized by being connected to a ground electrode on the bottom surface of the circuit board. According to the present invention, since the distance between the heat radiation electrode of the power amplifier IC and the ground electrode formed on the bottom surface of the circuit board can be reduced, the heat radiation efficiency is improved.

  As an example of a preferred aspect of the present invention, the circuit board includes a core layer that is a conductor layer that is thicker than other conductor layers and functions as a ground, and either one of the high-frequency IC and the power amplifier IC or Both are characterized in that they are arranged in through holes or recesses formed in the core layer. According to the present invention, the shielding property and heat dissipation of the high frequency IC and the power amplifier IC are improved by the core layer.

  The high-frequency circuit module according to the present invention includes a circuit board formed by alternately laminating insulator layers and conductor layers, and a power amplifier IC mounted on one surface of the circuit board. A terminal electrode formed on the other surface of the circuit board and projecting the power amplifier IC in the thickness direction of the circuit board; a ground electrode formed on the other surface of the circuit board; A heat dissipating first via conductor for connecting the terminal and a conductor layer in the circuit board and a heat dissipating second via conductor for connecting the conductor layer and the ground electrode are provided.

  According to the present invention, the heat generated in the power amplifier IC is conducted in the thickness direction of the circuit board by the first via conductor, and is electrically driven in the left-right direction along the conductor layer. The heat of the conductor layer is conducted to the ground electrode of the circuit board by the second via conductor, and is radiated to the parent circuit board at the mounting destination. As a result, even when the power amplifier IC is arranged on the peripheral portion of the circuit board, the heat generated in the power amplifier IC is radiated to the parent circuit board through the first via conductor and the second via conductor and the conductor layer for heat radiation. can do.

  The high-frequency circuit module according to the present invention is mounted on a circuit board formed by laminating an insulator layer and a conductor layer, a high-frequency IC mounted on the circuit board and performing high-frequency signal transmission processing and reception processing, and the circuit board. The circuit board includes a power amplifier IC that amplifies a transmission signal from the high frequency IC, and a duplexer that separates a transmission signal output from the power amplifier IC to the antenna and a reception signal input from the antenna to the high frequency IC. A first signal line for transmitting the transmission signal amplified by the power amplifier IC to the duplexer, and a second signal line for transmitting the transmission signal before amplification output from the high frequency IC to the power amplifier IC, and One signal line is formed to have a wiring length shorter than that of the second signal line.

  According to the present invention, the first signal line for transmitting the transmission signal amplified by the power amplifier IC to the duplexer is more than the second signal line for transmitting the transmission signal before amplification output from the high frequency IC to the power amplifier IC. Since it is short, it becomes easy to reduce the size and increase the density while preventing noise from being mixed into the receiving circuit of the high frequency IC, and it is possible to reduce power loss and radiation noise.

  The high-frequency circuit module according to the present invention is mounted on a circuit board formed by laminating an insulator layer and a conductor layer, a high-frequency IC mounted on the circuit board and performing high-frequency signal transmission processing and reception processing, and the circuit board. The circuit board includes a power amplifier IC that amplifies a transmission signal from the high frequency IC, and a duplexer that separates a transmission signal output from the power amplifier IC to the antenna and a reception signal input from the antenna to the high frequency IC. A second signal line for transmitting the transmission signal before amplification output from the high frequency IC to the power amplifier IC, a third signal line for transmitting the reception signal from the duplexer to the high frequency IC, and the third signal line The wiring length is shorter than that of the second signal line.

  According to the present invention, the third signal line for transmitting the reception signal from the duplexer to the high frequency IC is shorter than the second signal line for transmitting the transmission signal before amplification output from the high frequency IC to the power amplifier IC. It is easy to reduce the size and increase the density while preventing noise from entering the receiving circuit of the IC.

  As described above, according to the present invention, the signal line for inputting the received signal from the duplexer to the high frequency IC is not located near the power amplifier IC. Further, the length of the signal line for inputting the received signal from the duplexer to the high frequency IC can be shortened. As a result, it becomes easy to reduce the size and increase the density while preventing noise from entering the receiving circuit of the high-frequency IC.

High-frequency circuit module schematic circuit diagram The top view of the high frequency circuit module concerning a 1st embodiment The bottom view of the high frequency circuit module concerning a 1st embodiment Sectional drawing of the high frequency circuit module which concerns on 1st Embodiment The top view of the high frequency circuit module concerning other examples concerning a 1st embodiment Top view of the high-frequency circuit module according to the second embodiment Bottom view of the high-frequency circuit module according to the second embodiment Sectional drawing of the high frequency circuit module which concerns on 2nd Embodiment

(First embodiment)
A high-frequency circuit module according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a schematic circuit diagram of the high-frequency circuit module. In the present embodiment, only the configuration according to the gist of the present invention will be mainly described for the sake of simplicity.

  The high-frequency circuit module 100 according to the present embodiment is used in a mobile phone that supports two frequency bands. As shown in FIG. 1, the high-frequency circuit module 100 includes a high-frequency switch 101, first and second duplexers 110 and 120, transmission high-frequency power amplifiers 151 and 152, and an RFIC (Radio Frequency Integrated Circuit) 160. I have. In the actual circuit configuration, a matching circuit, a bandpass filter for transmission signals, and the like are provided for each frequency band, but are omitted in this embodiment for the sake of simplicity.

  The high frequency switch 101 switches the connection between the first to second duplexers 110 to 120 and one external antenna 10.

  Each of the duplexers 110 and 120 includes transmission filters 112 and 122 and reception filters 114 and 124, respectively. As the transmission filters 112 and 122 and the reception filters 114 and 124, various types such as a surface acoustic wave (SAW) filter and a bulk acoustic wave (BAW) filter can be used. In this embodiment, a SAW filter is used. The transmission filters 112 and 122 are connected to the transmission port of the RFIC 160 via the high frequency power amplifiers 151 and 152. The reception filters 114 and 124 are connected to the reception port of the RFIC 160. The high frequency power amplifiers 151 and 152 are packaged in one power amplifier IC 155. The RFIC 160 performs transmission processing and reception processing such as modulation / demodulation processing and multiplexing processing of high-frequency signals.

  Next, the structure of the high-frequency circuit module 100 will be described with reference to FIGS. 2 is a top view of the high-frequency circuit module, FIG. 3 is a bottom view of the high-frequency circuit module, and FIG. 4 is a cross-sectional view in the direction of arrow A in FIG.

  As shown in FIG. 2, the high-frequency circuit module 100 has an RFIC 160, a first duplexer 110, a power amplifier IC 155, and a high-frequency switch 101 mounted on the upper surface of a circuit board 200. In the first duplexer 110, the first transmission filter 112 and the first reception filter 114 are accommodated in one surface mounting package. On the other hand, the second duplexer 120 is embedded in the circuit board 200. Here, the second duplexer 120 is configured such that its constituent elements (transmission filter, reception filter, etc.) are individually embedded in the circuit board 200. That is, unlike the first duplexer 110, the second duplexer 120 is not in a form housed in a package.

  The circuit board 200 is a multilayer board formed by alternately laminating insulator layers and conductor layers. As shown in FIG. 4, the circuit board 200 includes a core layer 210 that is a metal conductor layer having good conductivity and is relatively thick, and a plurality of circuit boards 200 formed on one main surface (upper surface) of the core layer 210. Insulator layer 221 and conductor layer 222, and a plurality of insulator layers 231 and conductor layer 232 formed on the other main surface (lower surface) of core layer 210. The insulator layers 221 and 231 and the conductor layers 222 and 232 are formed on both main surfaces of the core layer 210 by a build-up method. Here, two of the conductor layers 222 located between the core layer 210 and one main surface (upper surface) of the circuit board 200, and the other main surface (lower surface) of the core layer 210 and the circuit board 200, One of the conductor layers 232 located between the layers is a ground conductor layer 225, 226, 235 to which a reference potential (ground) is applied. The ground conductor layers 225 and 235 are the conductor layers 222 and 232 that are closest to the core layer 210, and are connected to the core layer 210 via via conductors 241, respectively. Therefore, the core layer 210 also functions as a ground conductor. Also, a conductor layer 222 is interposed between the two ground conductor layers 225 and 226, and the wiring formed on the conductor layer 222 can function as a strip line. On one main surface (upper surface) of the circuit board 200, conductive lands 201 and wirings 202 for component mounting are formed. A large number of terminal electrodes 205 are formed on the peripheral edge of the other main surface (lower surface) of the circuit board 200. A large number of ground electrodes 206 having an area larger than that of the terminal electrode 205 are formed on the main surface (lower surface) of the circuit board 200 and inside the region where the terminal electrode 205 is formed. An RFIC 160, a first duplexer 110, and a power amplifier IC 155 are soldered to the land 201.

  The core layer 210 is formed with a through hole 211 for accommodating a component. A second transmission filter 122 and a second reception filter 124 that constitute the second duplexer 120 are disposed in the through hole 211. Therefore, the core layer 210 preferably has a thickness larger than the height of the built-in component. In the present embodiment, core layer 210 is formed of a metal plate, more specifically, a metal plate made of copper or a copper alloy. An insulator such as a resin is integrally filled with the insulator layer 221 or 231 in the through hole 211 and in the gap with the housing component. Terminal electrodes 122 a and 124 a are formed on the upper surfaces of the second transmission filter 122 and the second reception filter 124. The terminal electrodes 122a and 124a are connected to the conductor layer 222 through via conductors 242.

  A characteristic point of the high-frequency module 100 according to the present invention is that the first duplexer 110 and the second duplexer 120 are arranged between the RFIC 160 and the power amplifier IC 155 as shown in FIG. As a result, the length of the signal line 170 for transmitting the reception signal input from the first duplexer 110 and the second duplexer 120 to the RFIC 160 can be shortened, and the mixing of noise into the signal line 170 can be extremely reduced. be able to. In the example of FIG. 2, the reception signal output from the first duplexer 110 is input to the RFIC 160 via the signal line 170 formed on the upper surface of the circuit board 200. On the other hand, the transmission signal output from the RFIC 160 is sent to the power amplifier IC 155 via the signal line 180 formed in the inner layer of the circuit board 200, more specifically, the conductor layer 222 interposed between the two ground conductor layers 225 and 226. Entered. The amplified transmission signal output from the power amplifier IC is input to the first duplexer 110 via the signal line 185 formed on the upper surface of the circuit board 200. Here, it should be noted that the signal line 185 that transmits the signal amplified by the power amplifier IC is shorter than the signal line 180 that transmits the signal before amplification output from the RFIC 160. In FIG. 2, signal lines that are input to and output from the second duplexer 120 are omitted for the sake of simplicity.

  Another characteristic point of the high-frequency module 100 according to the present invention is that the power amplifier IC 155 is mounted on the peripheral portion of the circuit board 200 as shown in FIGS. 2 and 3. As shown in FIG. 3, the power amplifier IC 155 is mounted at a position where a projection area projected in the thickness direction of the circuit board 200 overlaps with a formation area of the terminal electrode 205. As shown in FIG. 4, the ground terminal 155a of the power amplifier IC 155 is mounted on the land 201 of the circuit board 200, and the land 201 is connected to the core layer 210 via a plurality of heat radiation via conductors 243. Yes. The core layer 210 is connected to the ground electrode 206 on the lower surface via a plurality of heat dissipating via conductors 244. With such a structure, heat generated in the power amplifier IC 155 is conducted in the thickness direction of the circuit board 200 by the via conductor 243 and conducted in the left-right direction along the core layer 210. The heat of the core layer 210 is conducted to the ground electrode 206 through the via conductor 244, and is radiated to the parent circuit board at the mounting destination.

  According to such a high-frequency circuit module 100, since the duplexers 110 and 120 are disposed between the RFIC 160 and the power amplifier IC 155, a signal line for inputting a reception signal from the duplexers 110 and 120 to the RFIC 160 is powered. It is not located near the amplifier IC 155. In addition, the length of the signal line for inputting the received signal from the duplexers 110 and 120 to the RFIC 160 can be shortened. As a result, it is easy to reduce the size and increase the density while preventing noise from entering the receiving circuit of the RFIC 160. The transmission signal output from the RFIC 160 passes through the vicinity of the duplexers 110 and 120 and is input to the power amplifier IC 155. However, since the transmission signal is before power amplification, the influence on the duplexers 110 and 120 and other circuits is extremely small. On the other hand, since the power amplifier IC 155 and the duplexers 110 and 120 are adjacent to each other, the length of the signal line for transmitting the transmission signal after power amplification can be shortened. As a result, power loss and radiation noise can be reduced.

  Further, in the high-frequency circuit module 100 according to the present embodiment, even if the power amplifier IC 155 is arranged on the peripheral portion of the circuit board 200, the heat generated in the power amplifier IC is dissipated through the via conductors 243 and 244 for radiating and the core layer 210. The heat can be radiated to the parent circuit board via Therefore, the RFIC 160 can be arranged on the inner side of the peripheral edge of the circuit board. This facilitates the design of component arrangement and circuit pattern especially in the vicinity of the RFIC 160, and further, the wiring length can be shortened, so that the high frequency characteristics are excellent.

  In the first embodiment, the transmission signal output from the RFIC 160 is input to the power amplifier IC 155 via the signal line 180 formed in the inner layer of the circuit board 200. As shown in FIG. The signal may be input to the power amplifier IC 155 via the signal line 181 formed on the circuit board 200.

(Second Embodiment)
A high-frequency circuit module according to a second embodiment of the present invention will be described with reference to the drawings. The high-frequency circuit module according to the present embodiment is different from the first embodiment in the mounting form of the RFIC and the power amplifier IC. The other points, for example, the schematic circuit diagram of the high-frequency circuit module, are the same as those in the first embodiment, and therefore the differences will be mainly described in detail here.

  The structure of the high-frequency circuit module 300 according to the second embodiment will be described with reference to FIGS. 6 is a top view of the high-frequency circuit module, FIG. 7 is a bottom view of the high-frequency circuit module, and FIG. 8 is a cross-sectional view in the direction of arrow A in FIG.

  As shown in FIG. 6, the high-frequency circuit module 300 has a high-frequency switch 101 and a first duplexer 110 mounted on the surface of a circuit board 400. The first duplexer 110 is an individual component in which the first transmission filter 112 and the first reception filter 114 are accommodated in one package. On the other hand, the second duplexer 120, the RFIC 160, and the power amplifier IC 155 are embedded in the circuit board 400. Here, the second duplexer 120 is an individual component in which the second transmission filter 122 and the first reception filter 124 are accommodated in one surface mounting package.

  The circuit board 400 is a multilayer board formed by alternately laminating insulator layers and conductor layers. As shown in FIG. 8, the circuit board 400 has a core layer 410 that is a conductive layer made of a relatively thick metal having good conductivity, and a plurality of layers formed on one main surface (upper surface) of the core layer 410. Insulator layer 421 and conductor layer 422, and a plurality of insulator layers 431 and conductor layers 432 formed on the other main surface (lower surface) of core layer 410. The insulator layers 421 and 431 and the conductor layers 422 and 432 are formed on both main surfaces of the core layer 410 by a build-up method. Here, the core layer 410 functions as a ground conductor to which a reference potential (ground) is applied. On one main surface (upper surface) of the circuit board 400, conductive lands 401 and wirings 402 for component mounting are formed. A large number of terminal electrodes 405 are formed on the peripheral edge of the other main surface (lower surface) of the circuit board 400. A large number of ground electrodes 406 having an area larger than that of the terminal electrode 405 are formed on the main surface (lower surface) of the circuit board 400 and inside the region where the terminal electrode 405 is formed. A high frequency switch 101 and a first duplexer 110 are soldered to the land 401.

  The core layer 410 is formed with a through hole 411 for accommodating a component. In the through hole 411, the RFIC 160, the second duplexer 120, and the power amplifier IC 155 are disposed. Therefore, it is preferable that the core layer 410 has a thickness larger than the height of the built-in electronic component and a bending strength. The core layer 410 is made of a conductive material and is electrically supplied with a reference potential (ground). Therefore, in a broad sense, the core layer 410 can be interpreted as a conductor layer of the multilayer circuit board 400. In the present embodiment, the core layer 410 is formed of a metal plate, more specifically, a metal plate made of copper or a copper alloy. An insulator such as a resin is integrally filled with the insulating layer 421 or 431 in the through hole 411 and in the gap with the housing component. Terminal electrodes 160 a, 120 a, and 155 a are formed on the lower surfaces of the RFIC 160, the second duplexer 120, and the power amplifier IC 155. The terminal electrodes 160a, 120a, 155a are connected to the conductor layer 432 through the via conductors 442.

  A characteristic point of the high-frequency module 300 according to the present invention is that, as in the first embodiment, as shown in FIGS. 6 and 7, the first duplexer 110 and the second duplexer 120 are connected between the RFIC 160 and the power amplifier IC 155. It is in the point arranged between. As a result, the length of the signal line 170 for transmitting the reception signal input from the first duplexer 110 and the second duplexer 120 to the RFIC 160 can be shortened, and the mixing of noise into the signal line 170 can be extremely reduced. be able to. In the example of FIG. 6, the reception signal output from the first duplexer 110 is input to the RFIC 160 via the signal line 170 formed in the inner layer of the circuit board 400. On the other hand, the transmission signal output from the RFIC 160 is input to the power amplifier IC 155 via the signal line 180 formed in the inner layer of the circuit board 400. The amplified transmission signal output from the power amplifier IC 155 is input to the first duplexer 110 via the signal line 185 formed in the inner layer of the circuit board 400. Here, it should be noted that the signal line 185 that transmits the signal amplified by the power amplifier IC is shorter than the signal line 180 that transmits the signal before amplification output from the RFIC 160. In FIG. 6, signal lines that are input to and output from the second duplexer 120 are omitted for the sake of simplicity.

  In this embodiment, as shown in FIGS. 6 and 7, the RFIC 160 is disposed at a position at least partially overlapping the region where the high frequency switch 101 is projected in the thickness direction of the circuit board 400. In addition, the first duplexer 110 is disposed at a position where at least a part of the first duplexer 110 is overlapped with a region obtained by projecting the second duplexer 120 in the thickness direction of the circuit board 400. As described above, since the components are arranged so as to overlap each other, the mounting density is improved in the projection area in the board thickness direction, thereby enabling miniaturization. In addition, since the distance between various signal lines connecting the high-frequency switch 101, the duplexers 110 and 120, the power amplifier IC 155, and the RFIC 160 can be shortened, signal loss, noise intrusion, and the like are suppressed.

  As shown in FIG. 7, the power amplifier IC 155 is mounted at a position where the projection area projected in the thickness direction of the circuit board 400 overlaps with the formation area of the ground electrode 406. As shown in FIG. 8, the ground terminal 155 b that also serves as the heat radiation electrode of the power amplifier IC 155 is connected to the ground electrode 406 on the lower surface of the circuit board 400 through a plurality of heat radiation via conductors 443. With such a structure, heat generated in the power amplifier IC 155 is conducted to the ground electrode 406 through the via conductor 443 and is radiated to the mounting target parent circuit board.

  According to such a high-frequency circuit module 300, since the duplexers 110 and 120 are disposed between the RFIC 160 and the power amplifier IC 155, a signal line for inputting a reception signal from the duplexers 110 and 120 to the RFIC 160 is a power. It is not located near the amplifier IC 155. In addition, the length of the signal line for inputting the received signal from the duplexers 110 and 120 to the RFIC 160 can be shortened. As a result, it is easy to reduce the size and increase the density while preventing noise from entering the receiving circuit of the RFIC 160. The transmission signal output from the RFIC 160 passes through the vicinity of the duplexers 110 and 120 and is input to the power amplifier IC 155. However, since the transmission signal is before power amplification, the influence on the duplexers 110 and 120 and other circuits is extremely small. On the other hand, since the power amplifier IC 155 and the duplexers 110 and 120 are adjacent to each other, the length of the signal line for transmitting the transmission signal after power amplification can be shortened. As a result, power loss and radiation noise can be reduced.

  In the high-frequency circuit module 300 according to the present embodiment, since the power amplifier IC 155 is embedded in the circuit board 400, the distance between the heat radiation electrode 155b of the power amplifier IC 155 and the ground electrode 406 of the circuit board 400 is reduced. Can do. Thereby, the heat radiation efficiency of the power amplifier IC 155 is improved.

  Although the embodiment of the present invention has been described in detail above, the present invention is not limited to this. For example, in the first embodiment, both the RFIC 160 and the power amplifier IC 155 are mounted on the circuit board 200. In the second embodiment, both the RFIC 160 and the power amplifier IC 155 are embedded in the circuit board 400. The RFIC 160 may be mounted on the circuit board and the power amplifier IC 155 may be embedded in the circuit board, or the RFIC 160 may be embedded in the circuit board and the power amplifier IC 155 may be mounted on the circuit board. In each embodiment, it does not matter whether the duplexers 110 and 120 and the high-frequency switch 101 are mounted or embedded on the circuit board.

  In addition, the mounting structure for the wiring between the RFIC 160, the power amplifier IC 155, and the duplexers 110 and 120 in each of the above embodiments is merely an example of the present invention, and is mounted on the circuit board according to the specifications of the high-frequency circuit module. Whether the wiring is formed or formed in the inner layer can be arbitrary.

  In the first embodiment, the second duplexer 120 is embedded in the circuit board 200. The filters 122 and 124, which are individual parts, are embedded in the circuit board 200. On the other hand, in the second embodiment, the filters 122 and 124 are packaged. As the second duplexer 120 is embedded in the circuit board 400 as the individual component, the mounting form of the duplexers 110 and 120 is not limited.

  In each of the above embodiments, one power amplifier IC 155 including two high-frequency power amplifiers 151 and 152 is used. However, the number of amplifier circuits included in the power amplifier IC 155 and the number of power amplifier ICs 155 themselves are not limited. It is. Another example of mounting the circuit of FIG. 1 is one in which two power amplifier ICs are mounted on the circuit board 200 corresponding to the high-frequency power amplifiers 151 and 152, respectively. In this case, both power amplifier ICs may be mounted on the upper surface of the circuit board 200, or both power amplifier ICs may be embedded in the circuit board 200. Furthermore, one power amplifier IC may be mounted on the upper surface of the circuit board 200 and the other power amplifier IC may be embedded in the circuit board 200.

  In each of the above embodiments, the through holes 211 and 411 are formed in the core layers 210 and 410, and electronic parts such as a filter, an RFIC, and a power amplifier IC are arranged in the through holes 211 and 411. Instead of the holes 211 and 411, recesses may be formed in the core layers 210 and 410, and the respective electronic components may be disposed in the recesses.

  In each of the above embodiments, copper or a copper alloy is exemplified as the material of the core layers 210 and 410, but other metals, alloys, resins, or other materials are not required. Further, the presence or absence of conductivity of the core layers 210 and 410 is not questioned. Further, in the above embodiment, the circuit boards 200 and 400 are illustrated as having the relatively thick core layers 210 and 410, but a multilayer circuit board without the core layers 210 and 410 may be used.

  In each of the above embodiments, the various parts are exposed on the upper surfaces of the circuit boards 200 and 400, but a case is attached so as to cover the whole or part of the upper surfaces of the circuit boards 200 and 400. Or may be sealed with a resin or the like.

  DESCRIPTION OF SYMBOLS 10 ... Antenna, 100, 300 ... High frequency circuit module, 101 ... High frequency switch, 110, 120 ... Duplexer, 112, 122 ... Transmission filter, 114, 124 ... Reception filter, 155 ... Power amplifier IC, 160 ... RFIC, 200, 400 ... Circuit board, 201, 401 ... Land, 205, 405 ... Terminal electrode, 206, 406 ... Ground electrode, 210, 410 ... Core layer, 211, 411 ... Through-hole, 225, 226, 235 ... Ground conductor layer, 243 244, 442, 443 ... Via conductor

Claims (8)

A circuit board formed by laminating an insulator layer and a conductor layer;
A high frequency IC mounted on a circuit board for performing transmission processing and reception processing of a high frequency signal;
A power amplifier IC mounted on a circuit board for amplifying a transmission signal from a high frequency IC;
A duplexer that separates a transmission signal output from the power amplifier IC to the antenna and a reception signal input from the antenna to the high-frequency IC;
A first signal line for transmitting the transmission signal amplified by the power amplifier IC to the duplexer and a second signal line for transmitting the transmission signal before amplification output from the high frequency IC to the power amplifier IC are formed on the circuit board. In addition, the first signal line is formed with a wiring length shorter than that of the second signal line. The third signal line for transmitting a reception signal from the duplexer to the high frequency IC is formed on the circuit board, and the third signal line is formed with a wiring length shorter than the second signal line. 1. The high frequency module according to 1. A circuit board formed by laminating an insulator layer and a conductor layer;
A high frequency IC mounted on a circuit board for performing transmission processing and reception processing of a high frequency signal;
A power amplifier IC mounted on a circuit board for amplifying a transmission signal from a high frequency IC;
A duplexer that separates a transmission signal output from the power amplifier IC to the antenna and a reception signal input from the antenna to the high-frequency IC;
The circuit board is formed with a second signal line for transmitting the transmission signal before amplification output from the high frequency IC to the power amplifier IC, and a third signal line for transmitting the reception signal from the duplexer to the high frequency IC, and The third signal line is formed with a wiring length shorter than that of the second signal line. The circuit board has a core layer that is a conductor layer that is thicker than the other conductor layers and functions as a ground, a ground electrode formed on the bottom surface, and a heat dissipation first connecting the lower surface of the power amplifier IC and the core layer. 4. The high-frequency circuit module according to claim 1, further comprising: a first via conductor and a second via conductor for heat dissipation that connects the ground electrode and the core layer. 5. The high-frequency circuit module according to claim 1, wherein the duplexer is embedded in a circuit board. The high frequency circuit module according to claim 4, wherein the duplexer is disposed in a through hole or a recess formed in a core layer of the circuit board. The duplexer includes a transmission filter that filters a transmission signal output from the power amplifier IC to the antenna and a reception filter that filters a reception signal input from the antenna to the high-frequency IC.
The high-frequency circuit module according to claim 6, wherein the transmission filter and the reception filter are individually arranged in a through hole or a recess formed in the core layer. The high frequency circuit module according to any one of claims 1 to 4, wherein the duplexer is mounted on a circuit board.

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