JP5489423B2 - Radiation imaging device - Google Patents

Description

  The present invention relates to a radiation imaging device, and more particularly to a radiation imaging device that outputs an imaging signal in accordance with the amount of radiation transmitted through a subject.

  In the medical field, a radiation imaging apparatus is used that performs imaging inside a human body by irradiating the human body with radiation such as X-rays and detecting the intensity of the radiation transmitted through the human body. Such radiation imaging apparatuses are roughly classified into a direct imaging apparatus and an indirect imaging apparatus. The direct imaging device is a system that directly converts the radiation that has passed through the human body into an electrical signal and takes it out. The indirect imaging device once converts the radiation that has passed through the human body into a phosphor and converts it into visible light. In this method, the visible light is converted into an electric signal and taken out to the outside.

  As a radiation imaging element used in an indirect imaging apparatus, an X-ray imaging element in which a photoelectric conversion element, a capacitor, and a TFT (switching element) are provided in the same layer configuration on a substrate is disclosed (for example, see Patent Document 1). . This radiation image sensor includes a pair of upper and lower electrodes for each pixel, a photoelectric conversion unit including a photoelectric conversion film sandwiched between the electrodes and made of an inorganic photoelectric conversion material such as amorphous silicon, and a photoelectric conversion film. And a TFT switch for converting the charge accumulated in the capacitor into a voltage signal and outputting the voltage signal are formed side by side on the substrate, and a protective film ( A phosphor made of cesium iodide (CsI) is provided via a (SiN film).

On the other hand, attempts have been made to use a lightweight and flexible resin substrate instead of a glass substrate in order to further reduce the thickness, weight, and damage resistance of the element.
However, the manufacture of the transistor using the above-described silicon thin film requires a relatively high temperature thermal process and is generally difficult to form directly on a resin substrate having low heat resistance.

  Therefore, active development of TFTs using semiconductor thin films of amorphous oxides that can be formed at low temperatures, such as In—Ga—Zn—O amorphous oxides, has been actively carried out (see, for example, Patent Document 2, Non-Patent Document 2). Patent Document 1).

A TFT using an amorphous oxide semiconductor can be formed at room temperature and can be formed on a film, and thus has recently attracted attention as a material for an active layer of a film (flexible) TFT. In particular, Tokyo Institute of Technology, Hosono et al. Reported that a TFT using a-IGZO has a field effect mobility of about 10 cm ² / Vs even on a PEN substrate, which is higher than that of an a-Si TFT on glass. In particular, it has attracted attention as a film TFT (see, for example, Non-Patent Document 2).
From such a viewpoint, an X-ray sensor using a TFT using an amorphous oxide on a flexible substrate as a light receiving portion has also been proposed (for example, see Patent Document 3).

However, in the case of using a TFT using the a-IGZO as a drive circuit of a display device, for ^example, the mobility of 1cm ² / Vs~10cm 2 / Vs, properties are insufficient, and high OFF current, ON / There is a problem that the OFF ratio is low. In particular, for use in a display device using an organic EL element, further improvement in mobility and improvement in the ON / OFF ratio are required.
JP-A-8-116044 JP 2006-165529 A JP 2006-165530 A IDW / AD '05, pages 845-846 (6 December, 2005) NATURE, Vol. 432 (25 November, 2004), pages 488-492.

When the photoelectric conversion film of the radiation image sensor is made of an inorganic photoelectric conversion material such as silicon, it has a broad absorption spectrum, so it absorbs part of the X-rays transmitted through the phosphor in addition to the light emitted by the phosphor. End up. As a result, there is a problem that the signal corresponding to the absorbed X-ray becomes noise and the image quality deteriorates.
Also, when the photoelectric conversion unit and the switching element layer configuration are shared and the photoelectric conversion unit and the switching element are arranged in parallel, the signal corresponding to the X-rays becomes noise in the switching element as well as the photoelectric conversion unit. End up.

  In general, a radiation imaging element needs to have a light receiving area (an area occupied by a photoelectric conversion film) equal to, for example, the size of the chest of a human body, and a large light receiving area is required. However, when the photoelectric conversion unit, the capacitor, and the TFT switch are formed in parallel on the substrate as in the case of the radiation imaging device described above, the formation area of the switching element and the capacitor is increased in each pixel unit, and one pixel However, the light receiving area corresponding to the photoelectric conversion unit is reduced, and there is a problem that high image quality cannot be obtained as a whole. In addition, when the capacitors and the TFT switches are arranged in a column on the substrate with respect to the photoelectric conversion unit, a light receiving area corresponding to the photoelectric conversion unit can be widely obtained. There is a problem that the output of the TFT switch is lowered and the necessary switching function cannot be performed.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a radiation imaging element capable of effectively suppressing noise and obtaining high image quality.

  In order to achieve the above object, the present invention provides the following radiation imaging element.

<1> A radiation imaging element that receives radiation transmitted through a subject and outputs an imaging signal corresponding to the radiation dose,
A photoelectric conversion unit including a lower electrode formed above the substrate, a photoelectric conversion film formed above the lower electrode and made of an organic photoelectric conversion material , and an upper electrode formed above the photoelectric conversion film; A pixel including a phosphor film formed on an electrode and a field effect transistor provided on the substrate corresponding to the photoelectric conversion unit and outputting a signal corresponding to the charge generated in the photoelectric conversion film Multiple parts,
The field effect transistor has at least a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode;
The active layer includes an amorphous oxide semiconductor and is in contact with the gate insulating film, and the resistive layer includes an amorphous oxide semiconductor between the active layer and at least one of the source electrode and the drain electrode. Is a radiation imaging element characterized by being electrically connected.
<2> The radiation imaging element according to <1>, wherein the resistance layer is thicker than the active layer.
<3> The radiation imaging element according to <1> or <2>, wherein electrical conductivity between the resistance layer and the active layer continuously changes.
< 4 > The radiation imaging element according to any one of < 1 > to < 3 > , wherein an oxygen concentration of the active layer is lower than an oxygen concentration of the resistance layer.
< 5 > The amorphous oxide semiconductor includes at least one selected from the group consisting of In, Ga, and Zn, or a composite oxide thereof. Any one of <1> to < 4 > This is a radiation imaging device.
< 6 > The amorphous oxide semiconductor contains In and Zn, and the composition ratio of Zn and In (represented by the ratio of Zn to In, Zn / In) of the resistance layer is the composition ratio Zn / In of the active layer. The radiation imaging element according to < 5 >, which is larger than In.
< 7 > The radiation imaging element according to any one of <1> to < 6 >, wherein the electric conductivity of the active layer is 10 ⁻⁴ Scm ⁻¹ or more and less than 10 ² Scm ⁻¹ .
< 8 > The radiation imaging element according to < 7 >, wherein the electric conductivity of the active layer is 10 ⁻¹ Scm ⁻¹ or more and less than 10 ² Scm ⁻¹ .
< 9 > The ratio of the electrical conductivity of the active layer to the electrical conductivity of the resistive layer (the electrical conductivity of the active layer / the electrical conductivity of the resistive layer) is 10 ¹ or more and 10 ¹⁰ or less. <1> to < 8 > The radiation imaging element according to any one of < 8 >.
< 10 > The ratio of the electrical conductivity of the active layer to the electrical conductivity of the resistive layer (the electrical conductivity of the active layer / the electrical conductivity of the resistive layer) is 10 ² or more and 10 ⁸ or less. < 9 > A radiation imaging device according to < 9 >.
< 11 > The radiation imaging element according to any one of <1> to < 10 >, wherein the substrate is a flexible resin substrate.

  According to the present invention, it is possible to provide a radiation imaging element capable of effectively suppressing noise and obtaining high image quality.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic cross-sectional view schematically showing a configuration of a three-pixel portion of a radiation imaging element that is an embodiment of the present invention. In the radiation imaging element 12, a signal output unit 14, a photoelectric conversion unit 13, and a phosphor film 8 are sequentially stacked on a substrate 1 such as a semiconductor substrate, a quartz substrate, and a glass substrate, and the signal output unit 14, A pixel unit is configured by the photoelectric conversion unit 13 and the phosphor film 8. A plurality of pixel units are arranged on the substrate 1, and the signal output unit 14 and the photoelectric conversion unit 13 in each pixel unit are configured to overlap each other.

<Phosphor film>
The phosphor film 8 is formed on the photoelectric conversion unit 13 via the transparent insulating film 7, and forms a phosphor that emits light by converting radiation incident from above (opposite the substrate 1) into light. It is a film. Providing such a phosphor film 8 absorbs the radiation transmitted through the subject and emits light.

The wavelength range of light emitted from the phosphor film 8 is preferably in the visible light range (wavelength 360 nm to 830 nm). In order to enable monochrome imaging with the radiation imaging element 12, the wavelength range of green is included. More preferably.
Specifically, the phosphor used for the phosphor film 8 preferably contains cesium iodide (CsI) when imaging using X-rays as radiation, and the emission spectrum upon irradiation with X-rays is 420 nm to 600 nm. It is particularly preferable to use CsI in the above .
Further, the thickness of the phosphor film 8 is 600 μm or less although it depends on energy.

<Photoelectric conversion unit>
Although it does not specifically limit as a photoelectric conversion material used for the photoelectric conversion part in this invention, The case where an organic photoelectric conversion material is used as an example is demonstrated.
The photoelectric conversion unit 13 includes an upper electrode 6, a lower electrode 2, and a photoelectric conversion film 4 disposed between the upper and lower electrodes, and the photoelectric conversion film 4 absorbs light emitted from the phosphor film 8. It is composed of a conversion material.

The upper electrode 6 is preferably made of a conductive material that is transparent at least with respect to the emission wavelength of the phosphor film 8 because the light generated by the phosphor film 8 needs to enter the photoelectric conversion film 4. Specifically, it is preferable to use a transparent conductive oxide (TCO) having a high transmittance for visible light and a small resistance value.
Although a metal thin film such as Au can be used as the upper electrode 6, TCO is preferable because it tends to increase the resistance value when it is desired to obtain a transmittance of 90% or more. For example, ITO, IZO, AZO, FTO, SnO ₂ , TiO ₂ , or ZnO ₂ can be preferably used, and ITO is most preferable from the viewpoint of process simplicity, low resistance, and transparency. Note that the upper electrode 6 may have a single configuration common to all the pixel portions, or may be divided for each pixel portion.
Moreover, the thickness of the upper electrode 6 can be 30 nm or more and 300 nm or less, for example.

  The photoelectric conversion film 4 contains an organic photoelectric conversion material, absorbs the light emitted from the phosphor film 8, and generates a charge corresponding to the absorbed light. In this way, if the photoelectric conversion film 4 includes an organic photoelectric conversion material, it has a sharp absorption spectrum in the visible range, and electromagnetic waves other than light emission by the phosphor film 8 are hardly absorbed by the photoelectric conversion film 4. Noise generated by absorption of radiation such as X-rays by the photoelectric conversion film 4 can be effectively suppressed.

  The organic photoelectric conversion material constituting the photoelectric conversion film 4 is preferably such that its absorption peak wavelength is closer to the emission peak wavelength of the phosphor film 8 in order to absorb light emitted by the phosphor film 8 most efficiently. Ideally, the absorption peak wavelength of the organic photoelectric conversion material and the emission peak wavelength of the phosphor film 8 are ideal, but if the difference between the two is small, the light emitted from the phosphor film 8 is sufficiently absorbed. Is possible. Specifically, the difference between the absorption peak wavelength of the organic photoelectric conversion material and the emission peak wavelength with respect to the radiation of the phosphor film 8 is preferably within 10 nm, and more preferably within 5 nm.

Examples of organic photoelectric conversion materials that can satisfy such conditions include quinacridone-based organic compounds and phthalocyanine-based organic compounds. For example, since the absorption peak wavelength in the visible region of quinacridone is 560 nm, if quinacridone is used as the organic photoelectric conversion material and Cs I is used as the material of the phosphor film 8, the difference in peak wavelength can be made within 5 nm. Thus, the amount of charge generated in the photoelectric conversion film 4 can be substantially maximized.

Here, the photoelectric conversion film 4 applicable to the radiation image sensor according to the present invention will be described more specifically.
The electromagnetic wave absorption / photoelectric conversion site in the radiation imaging device according to the present invention can be configured by an organic layer including a pair of electrodes 2 and 6 and an organic photoelectric conversion film 4 sandwiched between the electrodes 2 and 6. . More specifically, this organic layer is a part that absorbs electromagnetic waves, a photoelectric conversion part, an electron transport part, a hole transport part, an electron blocking part, a hole blocking part, a crystallization preventing part, an electrode, and an interlayer contact improvement. It can be formed by stacking or mixing parts.

The organic layer preferably contains an organic p-type compound or an organic n-type compound.
The organic p-type semiconductor (compound) is a donor organic semiconductor (compound) mainly represented by a hole-transporting organic compound and refers to an organic compound having a property of easily donating electrons. More specifically, an organic compound having a smaller ionization potential when two organic materials are used in contact with each other. Therefore, any organic compound can be used as the donor organic compound as long as it is an electron-donating organic compound. For example, triarylamine compound, benzidine compound, pyrazoline compound, styrylamine compound, hydrazone compound, triphenylmethane compound, carbazole compound, polysilane compound, thiophene compound, phthalocyanine compound, cyanine compound, merocyanine compound, oxonol compound, polyamine compound, indole Compounds, pyrrole compounds, pyrazole compounds, polyarylene compounds, condensed aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene derivatives), nitrogen-containing heterocyclic compounds The metal complex etc. which it has as can be used. In addition, it is not restricted to these, If it is an organic compound whose ionization potential is smaller than the organic compound used as an n-type (acceptor property) compound, it can use as a donor organic semiconductor.

  An organic n-type semiconductor (compound) is an acceptor organic semiconductor (compound) mainly represented by an electron-transporting organic compound and refers to an organic compound having a property of easily accepting electrons. More specifically, the organic compound having the higher electron affinity when two organic compounds are used in contact with each other. Therefore, as the acceptor organic compound, any organic compound can be used as long as it is an electron-accepting organic compound. For example, condensed aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene derivatives), 5-membered to 7-membered heterocycles containing nitrogen, oxygen, and sulfur atoms Compounds (e.g. pyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline, quinoxaline, quinazoline, phthalazine, cinnoline, isoquinoline, pteridine, acridine, phenazine, phenanthroline, tetrazole, pyrazole, imidazole, thiazole, oxazole, indazole, benzimidazole, benzotriazole , Benzoxazole, benzothiazole, carbazole, purine, triazolopyridazine, triazolopyrimidine, tetrazaindene, (Xadiazole, imidazopyridine, pyralidine, pyrrolopyridine, thiadiazolopyridine, dibenzazepine, tribenzazepine, etc.), polyarylene compounds, fluorene compounds, cyclopentadiene compounds, silyl compounds, nitrogen-containing heterocyclic compounds as ligands Etc. In addition, not only these but an organic compound with an electron affinity larger than the organic compound used as a donor organic compound can be used as an acceptor organic semiconductor.

  As the p-type organic dye or the n-type organic dye, known ones can be used, but preferably a cyanine dye, a styryl dye, a hemicyanine dye, a merocyanine dye (including zero methine merocyanine (simple merocyanine)), three nuclei Merocyanine dye, tetranuclear merocyanine dye, rhodacyanine dye, complex cyanine dye, complex merocyanine dye, allopolar dye, oxonol dye, hemioxonol dye, squalium dye, croconium dye, azamethine dye, coumarin dye, arylidene dye, anthraquinone dye, triphenyl Methane dye, azo dye, azomethine dye, spiro compound, metallocene dye, fluorenone dye, fulgide dye, perylene dye, phenazine dye, phenothiazine dye, quinone dye, in Pigment dye, diphenylmethane dye, polyene dye, acridine dye, acridinone dye, diphenylamine dye, quinacridone dye, quinophthalone dye, phenoxazine dye, phthaloperylene dye, porphyrin dye, chlorophyll dye, phthalocyanine dye, metal complex dye, condensed aromatic carbocyclic system And dyes (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene derivatives) and the like.

  Next, the metal complex compound will be described. The metal complex compound is a metal complex having a ligand having at least one nitrogen atom, oxygen atom or sulfur atom coordinated to a metal. The metal ion in the metal complex is not particularly limited, but is preferably beryllium ion, magnesium ion, aluminum ion, gallium ion, zinc ion, indium ion, or tin ion, more preferably beryllium ion, aluminum ion, gallium ion, Or it is a zinc ion, More preferably, it is an aluminum ion or a zinc ion. There are various known ligands contained in the metal complex. For example, “Photochemistry and Photophysics of Coordination Compounds” Springer-Verlag H. Examples include the ligands described in Yersin's 1987 issue, “Organometallic Chemistry-Fundamentals and Applications”, Akio Yamamoto's 1982 issue.

  The ligand is preferably a nitrogen-containing heterocyclic ligand (preferably having 1 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, particularly preferably 3 to 15 carbon atoms, and a monodentate ligand. Or a bidentate or higher ligand, preferably a bidentate ligand such as a pyridine ligand, a bipyridyl ligand, a quinolinol ligand, a hydroxyphenylazole ligand (hydroxyphenyl) Benzimidazole, hydroxyphenylbenzoxazole ligand, hydroxyphenylimidazole ligand), etc.), alkoxy ligand (preferably 1-30 carbon atoms, more preferably 1-20 carbon atoms, particularly preferably C1-C10, for example, methoxy, ethoxy, butoxy, 2-ethylhexyloxy, etc.), aryloxy Ligand (preferably having 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms, such as phenyloxy, 1-naphthyloxy, 2-naphthyloxy, 2,4, 6-trimethylphenyloxy, 4-biphenyloxy, etc.), heteroaryloxy ligands (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and particularly preferably 1 to 12 carbon atoms). And examples thereof include pyridyloxy, pyrazyloxy, pyrimidyloxy, quinolyloxy, and the like.

An alkylthio ligand (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, such as methylthio and ethylthio), an arylthio ligand (preferably Has 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms, and examples thereof include phenylthio and the like, and a heterocyclic substituted thio ligand (preferably 1 to 1 carbon atom). 30, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, and examples thereof include pyridylthio, 2-benzimidazolylthio, 2-benzoxazolylthio, 2-benzthiazolylthio and the like. Or a siloxy ligand (preferably having 1 to 30 carbon atoms, more preferably 3 to 25 carbon atoms, and particularly preferably 6 to 20 carbon atoms). For example, a triphenylsiloxy group, a triethoxysiloxy group, and a triisopropylsiloxy group.), More preferably a nitrogen-containing heterocyclic ligand, an aryloxy ligand, a heteroaryloxy group, or It is a siloxy ligand, More preferably, a nitrogen-containing heterocyclic ligand, an aryloxy ligand, or a siloxy ligand is mentioned.

  In the present invention, a p-type semiconductor layer and an n-type semiconductor layer are provided between a pair of electrodes, and at least one of the p-type semiconductor and the n-type semiconductor is an organic semiconductor, and these semiconductor layers It is preferable to include a photoelectric conversion film (photosensitive layer) having a bulk heterojunction structure layer including the p-type semiconductor and the n-type semiconductor as an intermediate layer. Thus, in the photoelectric conversion film, the inclusion of the bulk heterojunction structure layer can compensate for the disadvantage that the carrier diffusion length of the organic layer is short, and can improve the photoelectric conversion efficiency. The bulk heterojunction structure is described in detail in Japanese Patent Application Laid-Open No. 2005-303266.

  In the present invention, a photoelectric conversion film having a structure having two or more repeating structures (tandem structures) of a pn junction layer formed of a p-type semiconductor layer and an n-type semiconductor layer between a pair of electrodes ( A photosensitive layer) is preferable, and more preferably, a thin layer of a conductive material is inserted between the repetitive structures. The number of repeating structures (tandem structures) of the pn junction layer may be any number, but is preferably 2 to 50, more preferably 2 to 30, and particularly preferably 2 to 10 in order to increase the photoelectric conversion efficiency. It is. Silver or gold is preferable as the conductive material, and silver is most preferable. The tandem structure is described in detail in JP-A-2005-303266.

  In the present invention, in a photoelectric conversion film having a p-type semiconductor layer and an n-type semiconductor layer, more preferably a mixed / dispersed (bulk heterojunction structure) layer, between the pair of electrodes, A photoelectric conversion film containing an organic compound whose orientation is controlled in at least one of the n-type semiconductors is preferable, and more preferably, the orientation is controlled in both the p-type semiconductor and the n-type semiconductor, or the orientation can be controlled. This is a case containing an organic compound. As the organic compound used in the organic layer of the photoelectric conversion film, one having π-conjugated electrons is preferably used, but this π-electron plane is not perpendicular to the substrate (electrode substrate) but oriented at an angle close to parallel. The better it is. The angle with respect to the substrate is preferably 0 ° to 80 °, more preferably 0 ° to 60 °, still more preferably 0 ° to 40 °, and still more preferably 0 ° to 20 °. Particularly preferably, it is 0 ° or more and 10 ° or less, and most preferably 0 ° (that is, parallel to the substrate). As described above, the organic compound layer whose orientation is controlled may be partially included in the entire organic layer, but preferably the proportion of the portion whose orientation is controlled with respect to the entire organic layer is 10% or more. More preferably, it is 30% or more, more preferably 50% or more, further preferably 70% or more, particularly preferably 90% or more, and most preferably 100%. Such a state compensates for the shortcoming of the short carrier diffusion length of the organic layer by controlling the orientation of the organic compound in the organic layer in the photoelectric conversion film, and improves the photoelectric conversion efficiency.

  In the case where the orientation of the organic compound is controlled, it is more preferable that the heterojunction plane (for example, the pn junction plane) is not parallel to the substrate. It is more preferable that the heterojunction plane is oriented not at a parallel to the substrate (electrode substrate) but at an angle close to the vertical. The angle with respect to the substrate is preferably 10 ° or more and 90 ° or less, more preferably 30 ° or more and 90 ° or less, further preferably 50 ° or more and 90 ° or less, and further preferably 70 ° or more and 90 ° or less. Particularly preferably, it is 80 ° or more and 90 ° or less, and most preferably 90 ° (that is, perpendicular to the substrate). The organic compound layer whose heterojunction surface is controlled as described above may be partially included in the entire organic layer. Preferably, the proportion of the portion whose orientation is controlled with respect to the entire organic layer is 10% or more, more preferably 30% or more, still more preferably 50% or more, still more preferably 70% or more, and particularly preferably 90%. Above, most preferably 100%. In such a case, the area of the heterojunction surface in the organic layer increases, the amount of carriers of electrons, holes, electron-hole pairs, etc. generated at the interface increases, and the photoelectric conversion efficiency can be improved. In the photoelectric conversion film in which the orientation of both the heterojunction plane and the π-electron plane of the organic compound is controlled as described above, the photoelectric conversion efficiency can be particularly improved. These states are described in detail in JP-A-2006-086493.

The thickness of the photoelectric conversion film 4 is preferably as large as possible in terms of absorbing light from the phosphor film 8, but considering the ratio that does not contribute to charge separation, it is preferably 30 nm or more and 300 nm or less, more preferably 50 nm. It is not less than 250 nm and particularly preferably not less than 80 nm and not more than 200 nm.
In the radiation imaging element 12 shown in FIG. 1, the photoelectric conversion film 4 has a single-sheet configuration common to all pixel units, but may be divided for each pixel unit.

The lower electrode 2 is a thin film divided for each pixel portion. The lower electrode 2 can be made of a transparent or opaque conductive material, and aluminum, silver, or the like can be suitably used.
The thickness of the lower electrode 2 can be, for example, 30 nm or more and 300 nm or less.

  In the photoelectric conversion unit 13, by applying a predetermined bias voltage between the upper electrode 6 and the lower electrode 2, one of charges (holes, electrons) generated in the photoelectric conversion film 4 is moved to the upper electrode 6. And the other can be moved to the lower electrode 2. In the radiation imaging element 12 of the present embodiment, a wiring is connected to the upper electrode 6, and a bias voltage is applied to the upper electrode 6 through this wiring. In addition, the polarity of the bias voltage is determined so that electrons generated in the photoelectric conversion film 4 move to the upper electrode 6 and holes move to the lower electrode 2, but this polarity is reversed. May be.

  The photoelectric conversion unit 13 constituting each pixel unit may include at least the lower electrode 2, the photoelectric conversion film 4, and the upper electrode 6. However, in order to suppress an increase in dark current, the electron blocking film 3 and the hole are included. It is preferable to provide at least one of the blocking films 5, and it is more preferable to provide both.

  The electron blocking film 3 can be provided between the lower electrode 2 and the photoelectric conversion film 4. When a bias voltage is applied between the lower electrode 2 and the upper electrode 6, electrons are transferred from the lower electrode 2 to the photoelectric conversion film 4. It is possible to suppress the dark current from increasing due to the injection of.

  An electron donating organic material can be used for the electron blocking film 3. Specifically, in a low molecular material, N, N′-bis (3-methylphenyl)-(1,1′-biphenyl) -4,4′-diamine (TPD) or 4,4′-bis [N Aromatic diamine compounds such as-(naphthyl) -N-phenyl-amino] biphenyl (α-NPD), oxazole, oxadiazole, triazole, imidazole, imidazolone, stilbene derivative, pyrazoline derivative, tetrahydroimidazole, polyarylalkane, butadiene 4,4 ′, 4 ″ -tris (N- (3-methylphenyl) N-phenylamino) triphenylamine (m-MTDATA), porphine, tetraphenylporphine copper, phthalocyanine, copper phthalocyanine, titanium phthalocyanine oxide, etc. Polyphyrin compounds, triazole derivatives, oxa Use zazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, annealing amine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, or silazane derivatives. In the polymer material, polymers such as phenylene vinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, diacetylene, and derivatives thereof can be used.

  The material actually used for the electron blocking film 3 may be selected according to the material of the adjacent electrode, the material of the adjacent photoelectric conversion film 4 and the like, and 1.3 eV or more from the work function (Wf) of the material of the adjacent electrode. Those having a large electron affinity (Ea) and an Ip equivalent to or smaller than the ionization potential (Ip) of the material of the adjacent photoelectric conversion film 4 are preferable.

  The thickness of the electron blocking film 3 is preferably 10 nm or more and 200 nm or less, more preferably 30 nm or more and 150 nm or less, and particularly preferably, in order to reliably exhibit the dark current suppressing effect and prevent a decrease in the photoelectric conversion efficiency of the photoelectric conversion unit 13. Is from 50 nm to 100 nm.

  The hole blocking film 5 can be provided between the photoelectric conversion film 4 and the upper electrode 6. When a bias voltage is applied between the lower electrode 2 and the upper electrode 6, the hole blocking film 5 is transferred from the upper electrode 6 to the photoelectric conversion film 4. It is possible to suppress the increase in dark current due to the injection of holes.

  An electron-accepting organic material can be used for the hole blocking film 5. As an electron-accepting material, fullerenes such as C60 and C70, carbon nanotubes, derivatives thereof, 1,3-bis (4-tert-butylphenyl-1,3,4-oxadiazolyl) phenylene (OXD-7) ) And other oxadiazole derivatives, anthraquinodimethane derivatives, diphenylquinone derivatives, bathocuproine, bathophenanthroline, and derivatives thereof, triazole compounds, tris (8-hydroxyquinolinato) aluminum complexes, bis (4-methyl-8) -Quinolinato) Aluminum complexes, distyrylarylene derivatives, silole compounds and the like can be used.

  The thickness of the hole blocking film 5 is preferably 10 nm or more and 200 nm or less, more preferably 30 nm or more and 150 nm or less, in order to surely exhibit the dark current suppressing effect and prevent a decrease in the photoelectric conversion efficiency of the photoelectric conversion unit 13. Preferably they are 50 nm or more and 100 nm or less.

  The material actually used for the hole blocking film 5 may be selected according to the material of the adjacent electrode, the material of the adjacent photoelectric conversion film 4 and the like, and 1.3 eV from the work function (Wf) of the material of the adjacent electrode. As described above, it is preferable that the ionization potential (Ip) is large and that the Ea is equal to or larger than the electron affinity (Ea) of the material of the adjacent photoelectric conversion film 4.

In the case where the bias voltage is set such that holes out of charges generated in the photoelectric conversion film 4 move to the upper electrode 6 and electrons move to the lower electrode 2, the electron blocking film 3 and the hole blocking are set. The position of the film 5 may be reversed. Moreover, it is not necessary to provide both the electron blocking film 3 and the hole blocking film 5, and if any of them is provided, a certain dark current suppressing effect can be obtained.
Here, the photoelectric conversion material used for the photoelectric conversion film is not limited to an organic material in the present invention, and an inorganic material such as amorphous Si or amorphous oxide can also be used.

<Signal output section>
A signal output unit 14 is formed on the surface of the substrate 1 below the lower electrode 2 of each pixel unit. FIG. 2 schematically shows the configuration of the signal output unit 14. Corresponding to the lower electrode 2, a capacitor 9 that accumulates the charges transferred to the lower electrode 2, and a field effect thin film transistor that converts the charges accumulated in the capacitor 9 into a voltage signal and outputs the voltage signal (hereinafter sometimes simply referred to as a thin film transistor). 10) is formed. The region in which the capacitor 9 and the thin film transistor 10 are formed has a portion that overlaps the lower electrode 2 in plan view. With such a configuration, the signal output unit 14 and the photoelectric conversion unit 13 in each pixel unit Will have an overlap in the thickness direction. In order to minimize the plane area of the radiation imaging element 12 (pixel portion), it is desirable that the region where the capacitor 9 and the thin film transistor 10 are formed is completely covered with the lower electrode 2.

  The capacitor 9 is electrically connected to the corresponding lower electrode 2 through a wiring made of a conductive material penetrating an insulating film 11 provided between the substrate 1 and the lower electrode 2. Thereby, the electric charge collected by the lower electrode 2 can be moved to the capacitor 9.

<Thin film transistor section>
A thin film field effect transistor (sometimes abbreviated as “TFT”) used in the present invention has at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode in order. The active element has a function of switching a current between the source electrode and the drain electrode by applying a voltage to the electrode to control a current flowing in the active layer. As the TFT structure, either a staggered structure (also referred to as a top gate type) or an inverted staggered structure (also referred to as a bottom gate type) can be formed.

The TFT used in the present invention has at least a resistance layer and an active layer having electric conductivity higher than that of the resistance layer, and the resistance layer is electrically connected between the active layer and at least one of the source electrode and the drain electrode. Connected to.
One preferred embodiment has at least a resistive layer and an active layer in layers on a substrate whose schematic cross-sectional view is shown in FIG. 1, wherein the active layer is in contact with a gate insulating film, and the resistive layer is a source electrode and The structure is in contact with the drain electrode.
From the viewpoint of operational stability, it is preferable that the thickness of the active layer is larger than the thickness of the resistance layer. Preferably, the ratio of the thickness of the resistance layer to the thickness of the active layer is more than 1 and 100 or less, more preferably more than 1 and 10 or less.
Further, as another aspect, an aspect in which the electrical conductivity between the resistance layer and the active layer continuously changes in the active layer is also preferable.
Preferably, the oxygen concentration of the active layer is lower than the oxygen concentration of the resistance layer.
Preferably, the resistance layer and the active layer include an oxide semiconductor, and the oxide semiconductor is an amorphous oxide semiconductor including at least one selected from the group consisting of In, Ga, and Zn, or a composite oxide thereof. is there. More preferably, the oxide semiconductor contains In and Zn, and the composition ratio of Zn and In (represented by the ratio of Zn to In, Zn / In) of the resistance layer is larger than the composition ratio Zn / In of the active layer. Preferably, the Zn / In ratio of the resistance layer is 3% or more larger than the Zn / In ratio of the active layer, more preferably 10% or more.
Preferably, the ratio of the electrical conductivity of the active layer to the electrical conductivity of the resistive layer (the electrical conductivity of the active layer / the electrical conductivity of the resistive layer) is 10 ¹ or more and 10 ¹⁰ or less, more preferably 10 ² or more. 10 ⁸ or less.

Preferably, the electric conductivity of the active layer is 10 ⁻⁴ Scm ⁻¹ or more and less than 10 ² Scm ⁻¹ . More preferably, it is 10 ⁻¹ Scm ⁻¹ or more and less than 10 ² Scm ⁻¹ . The electric conductivity of the resistance layer is preferably 10 ⁻² Scm ⁻¹ or less, more preferably 10 ⁻⁹ Scm ⁻¹ or more and less than 10 ⁻³ Scm ^−1, which is smaller than the electric conductivity of the active layer.
If the electric conductivity of the active layer is less than 10 ⁻⁴ Scm ⁻¹ , high field effect mobility cannot be obtained, and if it is 10 ² Scm ⁻¹ or more, the OFF current increases and a good ON / OFF ratio is obtained. Is not preferable.

1) Structure Next, the structure of the thin film field effect transistor according to the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic diagram showing an example of an inverted staggered structure, which is a thin film field effect transistor of the present invention. When the substrate 100 is a flexible substrate such as a plastic film, an insulating layer 106 is provided on one surface of the substrate 100, and a gate electrode 102, a gate insulating film 103, an active layer 104-1, and a resistance layer 104- are formed thereon. 2 and a source electrode 105-1 and a drain electrode 105-2 are provided on the surface thereof. The active layer 104-1 is in contact with the gate insulating film 103, and the resistance layer 104-2 is in contact with the source electrode 105-1 and the drain electrode 105-2. The composition of the active layer 104-1 and the resistance layer 104-2 is such that the electrical conductivity of the active layer 104-1 when no voltage is applied to the gate electrode is greater than the electrical conductivity of the resistance layer 104-2. Is determined.

Here, for the active layer and the resistance layer, an oxide semiconductor disclosed in JP-A-2006-165530, for example, an In—Ga—Zn—O-based oxide semiconductor is used. Preferably, it is an amorphous oxide semiconductor, for example, an oxide containing at least one of In, Ga, and Zn (for example, an In—O system) is preferable, and at least two of In, Ga, and Zn are preferable. An oxide containing In (for example, In—Zn—O, In—Ga, or Ga—Zn—O) is more preferable, and an oxide containing In, Ga, and Zn is particularly preferable. As the In—Ga—Zn—O-based amorphous oxide, an amorphous oxide whose composition in a crystalline state is represented by InGaO ₃ (ZnO) _m (m is a natural number less than 6) is preferable, and InGaZnO is particularly preferable. ₄ is more preferable. These oxide semiconductors are known to have higher electron mobility as the electron carrier concentration is higher. That is, the higher the electric conductivity, the higher the electron mobility.

  According to the structure of the present invention, when the thin film field effect transistor is in an ON state in which a voltage is applied to the gate electrode, the active layer serving as a channel has a large electric conductivity. Becomes higher, and a high ON current can be obtained. Since the electric resistance of the resistance layer is small in the OFF state and the resistance of the resistance layer is high, the OFF current is kept low, so that the ON / OFF ratio characteristics are greatly improved.

FIG. 2 is a schematic view showing an example of a conventional thin film field effect transistor having an inverted staggered structure.
The active layer 114 has no electrical conductivity distribution in the thickness direction. In the conventional configuration, since it is necessary to lower the resistance value of the active layer 114 in order to reduce the OFF current, it is necessary to lower the carrier concentration of the active layer 114. According to JP 2006-165530 A, in order to obtain a good ON / OFF ratio, in order to reduce the conductivity of the amorphous oxide semiconductor of the active layer 104, the electron carrier concentration is less than 10 ¹⁸ / cm ³ , More preferably, it is disclosed to be less than 10 ¹⁶ / cm ³ . However, as shown in FIG. 2 of JP-A-2006-165530, in an In—Ga—Zn—O-based oxide semiconductor, the electron mobility of the film decreases when the electron carrier concentration is lowered. For this reason, the field effect mobility of the TFT cannot be 10 cm ² / Vs or more, and a sufficient ON current cannot be obtained. Therefore, sufficient characteristics cannot be obtained for the ON / OFF ratio.
Further, when the electron carrier concentration of the oxide semiconductor of the active layer 114 is increased in order to increase the electron mobility of the film, the electrical conductivity of the active layer 114 increases, the OFF current increases, and the ON / OFF ratio characteristics are poor. Become.

  Although not shown in the drawing, the gist of the present invention is that a semiconductor layer including an active layer and a resistance layer is electrically connected between a gate insulating film and a source electrode and a drain electrode. The semiconductor layer is provided so that the electric conductivity in the vicinity of the gate insulating film is larger than the electric conductivity in the vicinity of the source electrode and the drain electrode of the semiconductor layer. The present invention is not limited to providing a plurality of semiconductor layers including an active layer and a resistance layer as shown in FIG. The electrical conductivity of the semiconductor layer may change continuously.

  FIG. 3 is a schematic diagram showing an example of a comparative top-gate thin film field effect transistor. This is the structure disclosed in Japanese Patent Laid-Open No. 2006-165530. The active layer is formed of two layers, a high oxygen concentration layer 107 and a low oxygen concentration layer 108. The high oxygen concentration layer 107 is a layer having a low electron carrier concentration, that is, a layer having a low electric conductivity, and the low oxygen concentration layer 108 is a layer having a high electron carrier concentration, that is, a layer having a high electric conductivity. Therefore, in this comparative structure, since the active layer in contact with the gate insulating film 123 serving as a channel is a film having a low electron carrier concentration and a low electron mobility, high mobility cannot be achieved even in field effect mobility.

<Method for Manufacturing Radiation Imaging Element 12>
Next, a method for manufacturing the radiation imaging element 12 of this embodiment will be described.
In the present invention, both the amorphous oxide constituting the active layer 24 of the thin film transistor 10 and the organic photoelectric conversion material constituting the photoelectric conversion film 4 can be formed at a low temperature. Therefore, the substrate 1 is not limited to a substrate having high heat resistance such as a semiconductor substrate, a quartz substrate, and a glass substrate, and a flexible substrate such as a plastic can also be used. Specifically, flexible materials such as polyesters such as polyethylene terephthalate, polybutylene phthalate, polyethylene naphthalate, polystyrene, polycarbonate, polyethersulfone, polyarylate, polyimide, polycycloolefin, norbornene resin, poly (chlorotrifluoroethylene), etc. A conductive substrate can be used. If such a plastic flexible substrate is used, it is possible to reduce the weight, which is advantageous for carrying around, for example.
In addition, the substrate 1 is provided with an insulating layer for ensuring insulation, a gas barrier layer for preventing permeation of moisture and oxygen, an undercoat layer for improving flatness or adhesion to electrodes, and the like. May be.

After forming an insulating layer on the substrate 1 as necessary, the signal output unit 14 is formed.
As shown in FIG. 5, the thin film transistor 10 constituting the signal output unit 14 includes a gate electrode 22, a gate insulating film 23, and an active layer (channel layer) 24, and a source electrode 25 on the active layer 24. And the drain electrode 26 are formed at predetermined intervals. In the radiation imaging element 12 according to the present invention, the active layer 24 is formed of an amorphous oxide.
If the active layer 24 of the thin film transistor 10 is formed of an amorphous oxide, it does not absorb radiation such as X-rays, or even if it is absorbed, it remains extremely small. It can be effectively suppressed.

The thin film transistor 10 and the capacitor 9 can be formed by the following method, for example.
On the insulating substrate 1, after forming a film by sputtering using, for example, Mo, the gate electrode 22 patterned by photolithography is formed. At this time, the lower electrode 31 of the capacitor 9 can be patterned simultaneously.
Examples of the material for forming the gate electrode 22 include metals such as Al, Mo, Cr, Ta, Ti, Au, and Ag, alloys such as Al—Nd and APC, tin oxide, zinc oxide, indium oxide, and indium tin oxide. Preferable examples include metal oxide conductive films such as (ITO) and zinc indium oxide (IZO), organic conductive compounds such as polyaniline, polythiophene, and polypyrrole, or mixtures thereof.
The thickness of the gate electrode 22 is preferably 10 nm or more and 1000 nm or less.

Next, a gate insulating film 23 is formed by sputtering using SiO ₂ or the like. As a material constituting the gate insulating film 23, at least two or more insulators such as SiO ₂ , SiN _x , SiON, Al ₂ O ₃ , Y _s O ₃ , Ta ₂ O ₅ , and HfO ₂ are used. A mixed crystal compound can be used. A polymer insulator such as polyimide can also be used as the gate insulating film 23.

Further, a semiconductor layer is formed on the gate insulating film 23 by sputtering an I GZO film with a polycrystalline sintered body having a composition of InGaZnO ₄ as a target. Since an amorphous oxide semiconductor ( IGZO film) can be formed at a low temperature, even if a flexible resin substrate such as plastic is used, the amorphous oxide semiconductor (I GZO film) can be formed without deforming the substrate by heat. it can.
Furthermore, the amorphous oxide semiconductor ( IGZO film) can change the electric resistance of the film formed by adjusting the oxygen partial pressure during sputtering. Therefore, by keeping the oxygen partial pressure low in the initial stage of sputtering and keeping the oxygen partial pressure high in the second half of sputtering, the region close to the gate insulating film 23 is electrically connected to the active layer having high electrical conductivity and the region close to the source / drain electrodes. A structure having a resistance layer with low conductivity can be formed. After forming the active layer and the resistance layer in this way, the semiconductor layer 24 patterned by photolithography is formed.

After the active layer 24 is formed, indium tin oxide (ITO) is deposited by sputtering, for example, and source / drain electrodes 25 and 26 are formed in the same manner as the patterning of the gate electrode 22. At this time, the upper electrode 32 of the capacitor 9 is simultaneously patterned so as to be connected to the drain electrode 26.
Examples of the material constituting the source / drain electrode 26 include metals such as Al, Mo, Cr, Ta, Ti, Au, and Ag, alloys such as Al—Nd and APC, tin oxide, zinc oxide, indium oxide, and oxide. Preferable examples include metal oxide conductive films such as indium tin (ITO) and indium zinc oxide (IZO), organic conductive compounds such as polyaniline, polythiophene, and polypyrrole, or mixtures thereof.
The thicknesses of the source electrode 25 and the drain electrode 26 are preferably 10 nm or more and 1000 nm or less.

  Subsequently, as a protective film (insulating film) 11, an acrylic photosensitive resin is applied on the substrate 1 using a spin coater or the like, exposed so that a contact hole is formed at a predetermined position, and then developed. Thereby, the protective film (insulating film) 11 in which the contact hole is formed can be formed.

  Next, the lower electrode 2 of the photoelectric conversion unit 13 is formed by sputtering, for example, with Mo. Subsequently, by patterning in the same manner as the patterning of the gate electrode 22, the lower electrode 2 divided for each pixel portion can be formed. If the lower electrode 2 is divided for each pixel portion and the photoelectric conversion film 4, the upper electrode 6, and the phosphor film 8 are shared by a plurality of pixel portions arranged on the substrate 1, manufacturing is possible. It becomes easy and manufacturing cost can be kept low.

After forming the lower electrode 2, an electron blocking film, a photoelectric conversion film 4, a hole blocking film, and an upper electrode 6 are sequentially formed using the materials described above. The film forming method is not particularly limited, considering the suitability with the material to be used, etc., a printing method, a wet method such as a coating method, a physical method such as a vacuum deposition method, a sputtering method, an ion plating method, The film can be formed according to a method appropriately selected from chemical methods such as CVD and plasma CVD.
In the case where the photoelectric conversion film 4 is formed of amorphous silicon, a CVD apparatus is usually required and the manufacturing cost increases. However, in the present invention, an organic photoelectric conversion material is used, and the photoelectric conversion film 4 can be easily formed by, for example, vacuum deposition. Therefore, the manufacturing cost can be kept low.

After forming the upper electrode 6, an insulating film 7 is formed. The insulating film 7 is formed as a transparent insulating film 7 so that light from the phosphor film 8 can be transmitted, and can be formed of SiO ₂ , SiN or the like.

Next, the phosphor film 8 is formed. The phosphor film 8 depends on the type of radiation, the absorption peak wavelength of the photoelectric conversion film 4 and the like, but can be formed by Cs I or the like as described above when applied to an X-ray imaging apparatus.

Next, the operation of the radiation imaging element 12 will be described.
When the human body is irradiated with X-rays and X-rays transmitted through the human body enter the phosphor film 8, for example, light having a wavelength of 420 nm to 600 nm is emitted from the phosphor film 8, and this light enters the photoelectric conversion film 4. To do. When light in the green wavelength region of the incident light is absorbed by the photoelectric conversion film 4, charges are generated here, and holes of the generated charges move to the lower electrode 2 and accumulate in the capacitor 9. Is done.
The holes accumulated in the capacitor 9 are converted into a voltage signal by the thin film transistor 10 and output. A monochrome image obtained by photographing the inside of the human body is obtained by the voltage signal obtained from each pixel unit.

  And according to the radiation image pick-up element 12 of this embodiment, since the organic photoelectric conversion material with which it is easy to control an absorption peak wavelength is used as a material of the photoelectric conversion film 4, the light emission peak wavelength of the fluorescent substance film 8 and It is possible to make the absorption peak wavelengths of the photoelectric conversion film 4 substantially coincide with each other, and it is effective to absorb light emitted from the phosphor film 8 without waste and to generate noise by absorbing radiation such as X-rays. Can be prevented.

  In the case where the photoelectric conversion material is not an organic material, for example, in the case of amorphous silicon, since the absorption spectrum is broad, a large amount of X-ray noise is picked up by the photoelectric conversion unit 13. In this case, the X-ray noise hardly reaches the signal output unit 14, and even if an amorphous oxide is used for the TFT active layer, the noise reduction effect is hardly obtained. On the other hand, when an organic material is used as the photoelectric conversion material, the absorption spectrum has a sharp peak and the photoelectric conversion unit 13 can hardly pick up X-ray noise, but it is picked up by the photoelectric conversion unit 13. Since the X-ray noise that has not arrived reaches the signal output unit 14, the TFT active layer can easily pick up the X-ray noise. At this time, when the material constituting the TFT active layer is not an amorphous oxide, for example, in the case of amorphous silicon, the TFT active layer picks up the X-ray noise that is not picked up by the photoelectric conversion unit 13. The effect using the photoelectric conversion material is lost. However, if the TFT active layer is made of an amorphous oxide, the X-ray noise can be effectively prevented from being absorbed by the signal output unit 14. That is, since the active layer 24 of the thin film transistor 10 of the signal output unit 14 is made of an amorphous oxide, it hardly absorbs radiation such as X-rays transmitted through the photoelectric conversion unit 13, and noise in the signal output unit 14. Can also be effectively prevented.

  Thus, in the present invention, the photoelectric conversion film 4 and the active layer 24 of the signal output unit 14 do not use silicon, and the photoelectric conversion film 4 made of an organic material and the active layer 24 made of an amorphous oxide are used. By the combination, it is possible to achieve a state in which the X-ray noise is not absorbed by the photoelectric conversion unit 13 or the signal output unit 14, and as a result, noise caused by radiation such as X-rays in the photoelectric conversion unit 13 and the signal output unit 14 is greatly increased. Can be reduced.

  In addition, since the signal output unit 14 and the photoelectric conversion unit 13 in each pixel unit are formed so as to overlap at least partially in the thickness direction, the photoelectric conversion unit 13 and the signal output unit 14 are formed on the same plane. The area of one pixel can be reduced as compared with the radiation image pickup device, and the light receiving area by the photoelectric conversion unit 13 can be increased. Therefore, with the radiation imaging element 12 having such a configuration, noise due to radiation or the like can be effectively suppressed in the photoelectric conversion unit 13 and the signal output unit 14, and high-definition image quality can be obtained.

  Further, according to the radiation imaging element 12 of the present embodiment, since the dark current can be suppressed by the electron blocking film 3 and the hole blocking film 5, it is possible to perform imaging with higher image quality. When the radiation imaging element 12 is used for medical purposes, the entire area of the pixel portion is considerably increased. However, if the area is large, more charges are injected from the lower electrode 2 and the upper electrode 6 to the photoelectric conversion film 4. It is expected that. Therefore, it is effective to provide the electron blocking film 3 and the hole blocking film 5 to positively suppress the dark current.

  In addition, according to the radiation imaging element 12 of the present embodiment, after the signal output unit 14 and the lower electrode 2 are formed, each component can be formed by sequentially depositing each material on the entire surface of the substrate. For this reason, even when the area of the radiation imaging element 12 is increased, it is not necessary to increase the miniaturization process so much, so that the manufacturing can be easily performed.

It is a cross-sectional schematic diagram which shows schematic structure of the field effect transistor used for embodiment of this invention. It is a cross-sectional schematic diagram which shows schematic structure of the structure of the conventional field effect transistor. It is a cross-sectional schematic diagram which shows schematic structure of another structure of the conventional field effect transistor. It is a cross-sectional schematic diagram which shows schematic structure of the 3 pixel part of the radiation image pick-up element which is embodiment of this invention. It is sectional drawing which shows schematically the structure of the signal output part of 1 pixel part.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 Lower electrode 3 Electron blocking film 4 Photoelectric conversion film 5 Hole blocking film 6 Upper electrode 7 Transparent insulating film 8 Phosphor film 9 Capacitor 10 Field effect thin film transistor 11 Insulating film 12 Radiation imaging device 13 Photoelectric conversion unit 14 Signal output Part 22 gate electrode 23 gate insulating film 24 semiconductor layer 25 source electrode 26 drain electrode 31 capacitor lower electrode 32 capacitor upper electrode 100: TFT substrate 102, 122: gate electrodes 103, 113, 123: gate insulating films 104, 114: active layer 104-1: Active layer 104-2: Resistance layer 105-1, 105-21: Source electrode 105-2, 105-22: Drain electrode 106: Insulating layer 107: High oxygen concentration layer 108: Low oxygen concentration layer

Claims (11)

A radiation imaging element that receives radiation transmitted through a subject and outputs an imaging signal corresponding to the radiation dose,
A photoelectric conversion unit including a lower electrode formed above the substrate, a photoelectric conversion film formed above the lower electrode and made of an organic photoelectric conversion material , and an upper electrode formed above the photoelectric conversion film; A pixel including a phosphor film formed on an electrode and a field effect transistor provided on the substrate corresponding to the photoelectric conversion unit and outputting a signal corresponding to the charge generated in the photoelectric conversion film Multiple parts,
The field effect transistor has at least a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode;
The active layer includes an amorphous oxide semiconductor and is in contact with the gate insulating film, and the resistive layer includes an amorphous oxide semiconductor between the active layer and at least one of the source electrode and the drain electrode. A radiation imaging device characterized in that is electrically connected.   The radiation imaging element according to claim 1, wherein the thickness of the resistance layer is larger than the thickness of the active layer.   The radiation imaging element according to claim 1, wherein electrical conductivity between the resistance layer and the active layer continuously changes. Radiation imaging device according to any one of claims 1 to 3 in which the oxygen concentration of the active layer is equal to or lower than the oxygen concentration in the resistive layer. The amorphous oxide semiconductor is In, according to any one of claims 1 to 4, characterized in that it comprises at least one or a composite oxide thereof selected from the group consisting of Ga and Zn Radiation imaging device. The amorphous oxide semiconductor contains In and Zn, and the composition ratio of Zn and In in the resistance layer (represented by the ratio of Zn to In, Zn / In) is greater than the composition ratio Zn / In of the active layer The radiation imaging element according to claim 5 . Radiation imaging device according to any one of claims 1 to 6, wherein the electrical conductivity of the active layer is less than ¹⁰ -4 ^{Scm -1} or more ¹⁰ 2 ^{Scm -1.} The radiation imaging device according to claim 7 , wherein the electric conductivity of the active layer is 10 ⁻¹ Scm ⁻¹ or more and less than 10 ² Scm ⁻¹ . The ratio of the electrical conductivity of the active layer to the electrical conductivity of the resistive layer (the electrical conductivity of the active layer / the electrical conductivity of the resistive layer) is 10 ¹ or more and 10 ¹⁰ or less. The radiation imaging element according to any one of claims 8 to 9. Claim 9, wherein the ratio of the electric conductivity of the active layer to the electric conductivity of the resistance layer (electric conductivity of active layer / electric conductivity of resistance layer), characterized in that at 10 ² to 10 ⁸ or less The radiation image sensor described in 1. Radiation imaging device according to any one of claims 1 to 10, wherein the substrate is a flexible resin substrate.