JP5486431B2 - 発光装置用部品、発光装置およびその製造方法 - Google Patents
発光装置用部品、発光装置およびその製造方法 Download PDFInfo
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- JP5486431B2 JP5486431B2 JP2010167880A JP2010167880A JP5486431B2 JP 5486431 B2 JP5486431 B2 JP 5486431B2 JP 2010167880 A JP2010167880 A JP 2010167880A JP 2010167880 A JP2010167880 A JP 2010167880A JP 5486431 B2 JP5486431 B2 JP 5486431B2
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- light emitting
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
<蛍光体(原料粒子)の合成例(YAG:Ce蛍光体の合成例)>
硝酸イットリウム6水和物0.14985mol(14.349g)、硝酸アルミニウム9水和物0.25mol(23.45g)、および、硝酸セリウム6水和物0.00015mol(0.016g)を、250mLの蒸留水に溶解させ、0.4Mの前駆体(プレカーサ)溶液を調製した。
<蛍光体セラミックプレート(YAG−CP)の作製例>
YAG:Ce蛍光体(平均粒子径95nm)4g、バインダー樹脂としてpoly (vinyl butyl−co−vinyl alcohol co vinyl alcohol)(シグマアルドリッチ社製、重量平均分子量90000〜120000)0.21g、焼結助剤としてシリカ粉末(Cabot Corporation社製、商品名「CAB−O−SIL HS−5」)0.012g、および、メタノール10mLを乳鉢にて混合してスラリーとし、得られたスラリーをドライヤーにてメタノールを除去し、乾燥粉末を得た。
<回路基板、発光ダイオードおよびハウジングの製造例>
サイズ35mm×35mm、厚さ1.5mmのBT(ビスマレイミドトリアジン)樹脂基板上の中央に、青色発光ダイオードチップ(CREE社製、品番C450EX1000−0123、サイズ980μm×980μm、チップ厚み約100μm)を縦方向に2個、横方向に2個、合計4個(2行×2列)を、それぞれ4mm間隔で実装した青色LED素子を作製した。
<反射層の拡散反射率>
2液混合タイプの熱硬化性シリコーンエラストマー(信越シリコーン社製、品番KER2500)に、チタン酸バリウム粒子(堺化学工業社製、品番BT−03、吸着比表面積値3.7g/m2)を55質量%となるように添加し、よく攪拌混合し、拡散性反射樹脂層(以下、反射層)用のコーティング樹脂液(白色樹脂液)とした。
試験例1で用いたコーティング樹脂液(白色樹脂液)を、アプリケータを用いて、PET(ポリエチレンテレフタレート)フィルム上に、約200μmの厚みに塗工し、100℃で1時間、150℃で1時間加熱することによりキュアし、反射層を形成した。
実施例1と同様にして、YAG:Ce蛍光体のセラミックプレート(蛍光層)の表面にゲル状シリコーン樹脂(硬化状態の封止樹脂層)を形成し、その上に別途作製した反射層を貼りつけた。
2 封止樹脂層
3 蛍光層
4 反射層
Claims (3)
- 発光ダイオードを封止できる封止樹脂層と、
前記封止樹脂層の表面に形成され、蛍光を発光できる蛍光層と、
前記封止樹脂層の裏面において、前記封止樹脂層が前記発光ダイオードを封止する領域を避けるように設けられる、光を反射できる反射層と
を備えることを特徴とする、発光装置用部品。 - 前記反射層が、前記封止樹脂層が前記発光ダイオードを封止する領域を除く領域の全面に、パターン形成されていることを特徴とする、請求項1に記載の発光装置用部品。
- 外部から電力が供給される回路基板の上に、発光ダイオードを電気的に接合する工程と、
前記回路基板の上において、前記発光ダイオードを囲むように、かつ、上端部が、前記発光ダイオードの上端部よりも上側に配置されるように、ハウジングを設ける工程と、
前記封止樹脂層が前記発光ダイオードを被覆するとともに、前記蛍光層が前記ハウジングの上に配置されるように、前記回路基板の上に、請求項1または2に記載の発光装置用部品を設ける工程と
を備えることを特徴とする、発光装置の製造方法。
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JP2010167880A JP5486431B2 (ja) | 2010-07-27 | 2010-07-27 | 発光装置用部品、発光装置およびその製造方法 |
CN201110196823.2A CN102347423B (zh) | 2010-07-27 | 2011-07-13 | 发光装置用零件、发光装置及其制造方法 |
US13/182,064 US20120025247A1 (en) | 2010-07-27 | 2011-07-13 | Component for light-emitting device, light-emitting device and producing method thereof |
TW100125215A TW201205900A (en) | 2010-07-27 | 2011-07-15 | Component for light-emitting device, light-emitting device and producing method thereof |
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CN104981915A (zh) * | 2013-02-06 | 2015-10-14 | 株式会社小糸制作所 | 发光模块 |
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US9353932B2 (en) | 2013-03-13 | 2016-05-31 | Palo Alto Research Center Incorporated | LED light bulb with structural support |
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JP6476592B2 (ja) * | 2014-05-22 | 2019-03-06 | 信越化学工業株式会社 | 波長変換部材 |
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JP6249002B2 (ja) | 2015-09-30 | 2017-12-20 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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-
2010
- 2010-07-27 JP JP2010167880A patent/JP5486431B2/ja not_active Expired - Fee Related
-
2011
- 2011-07-13 US US13/182,064 patent/US20120025247A1/en not_active Abandoned
- 2011-07-13 CN CN201110196823.2A patent/CN102347423B/zh not_active Expired - Fee Related
- 2011-07-15 TW TW100125215A patent/TW201205900A/zh unknown
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CN102347423A (zh) | 2012-02-08 |
CN102347423B (zh) | 2015-08-05 |
JP2012028666A (ja) | 2012-02-09 |
US20120025247A1 (en) | 2012-02-02 |
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