JP5457325B6 - Solid state device - Google Patents

Description

  The present invention relates to a solid element device in which a solid element is sealed with a glass material, and more particularly to a solid element device using a glass material having a low melting point as a glass material.

  Conventionally, there is a solid element device in which a solid element such as a light emitting diode is sealed with a translucent resin material such as an epoxy resin. In such a solid element device, it is known that the translucent resin exhibits degradation such as yellowing in response to strong light. In particular, when a group III nitride compound semiconductor light emitting device that emits short-wavelength light is used, the translucent resin near the device is yellowed by the high energy light emitted from the device and the heat generated by the device itself. As a result, the light extraction efficiency may be reduced to a level that cannot be ignored.

  In order to prevent such deterioration of the sealing member, light emitting devices using low-melting glass as the sealing member have been proposed in JP-A-8-102553 and JP-A-11-177129.

  The light emitting device described in Japanese Patent Application Laid-Open No. 8-102553 is configured by covering the periphery of the LED element, the wire bonding portion, and the lead portion with a sealing body 7 made of transparent low-melting glass. As the low melting point glass, for example, selenium, thallium, arsenic, sulfur or the like is added so that the melting point is about 130 to 350 degrees Celsius. In this case, a low-melting glass having a melting point of 200 degrees Celsius or less (more preferably 150 degrees or less) is preferably used.

  According to the light-emitting device described in Japanese Patent Laid-Open No. 8-102553, the sealing body changes to yellow over time due to the bad or weak characteristics with respect to ultraviolet rays included in the epoxy resin or the like. The trouble can be avoided.

  In addition, a light emitting device described in Japanese Patent Application Laid-Open No. 11-177129 is a low melting point glass having a refractive index of about 2 which is close to a refractive index of about 2.3 of a GaN-based LED light emitting element as a sealing body covering the LED light emitting element. Is used.

  According to the light emitting device described in Japanese Patent Application Laid-Open No. 11-177129, the LED light emitting element is sealed with a low melting point glass having a refractive index close to that of the GaN-based LED light emitting element, so that it is totally reflected on the surface of the LED light emitting element. Thus, the amount of light returning to the inside is reduced, and the amount of light emitted from the LED light emitting element and incident on the low melting point glass is increased. As a result, the luminous efficiency of the chip-type LED or the like according to the present invention is higher than that of the conventional one in which the LED light-emitting element is sealed with an epoxy resin.

JP-A-8-102553 JP-A-11-177129

  An object of the present invention is to provide a solid element device capable of quickly conducting heat generated in a solid element to a heat sink or the like.

The present invention includes an inorganic material substrate, a plurality of solid elements mounted on the inorganic material substrate by flip chip mounting , connected in series, and in contact with the plurality of solid elements and bonded to the inorganic material substrate. A sealing glass that seals the solid element, and a circuit pattern that is formed on the inorganic material substrate and applies a current to the plurality of solid elements, and is formed on the surface of the inorganic material substrate, and the plurality of solid elements A surface pattern connected to the surface pattern, a circuit pattern including a back surface pattern connected to the surface pattern and formed on the back surface of the inorganic material substrate and connected to the outside, and the inorganic material on which the plurality of solid elements are mounted provided on the back surface of the substrate, and a heat dissipation pattern for releasing heat of the plurality of solid state elements to the outside, the heat radiation pattern in the back surface of the inorganic material substrate Solid state device whose serial a region corresponding to the plurality of solid state elements are provided at a site not formed the back pattern.

  According to the present invention, it is possible to quickly conduct heat generated in a solid element to a heat sink or the like.

The light-emitting device which concerns on the 1st Embodiment of this invention is shown, (a) is a longitudinal cross-sectional view of a light-emitting device, (b) is a side view of the GaN-type LED element which is a light source. The 1st modification of the light-emitting device which concerns on 1st Embodiment is shown, (a) is a longitudinal cross-sectional view of a light-emitting device, (b) is a side view of the GaN-type LED element which is a light source. It is a longitudinal cross-sectional view which shows the light-emitting device using another underfill as a 3rd modification. It is a longitudinal cross-sectional view which shows the light-emitting device which provided the mold part which consists of resin materials as a 4th modification. It is a longitudinal cross-sectional view which shows the light-emitting device which concerns on 2nd Embodiment. It is a longitudinal cross-sectional view of the light-emitting device which concerns on the 3rd Embodiment of this invention. It is a longitudinal cross-sectional view which shows the modification of the light-emitting device which concerns on 3rd Embodiment. It is a longitudinal cross-sectional view which shows the light-emitting device which concerns on 4th Embodiment. It is a longitudinal cross-sectional view which shows the 1st modification of the light-emitting device which concerns on 4th Embodiment. It is a longitudinal cross-sectional view which shows the 2nd modification of the light-emitting device which concerns on 4th Embodiment. The light-emitting device which concerns on 5th Embodiment is shown, (a) is a top view of a light-emitting device, (b) is a side view of a light-emitting device, (c) is a bottom view of a light-emitting device. It is a longitudinal cross-sectional view which shows the 1st modification of the light-emitting device which concerns on 5th Embodiment. It is a longitudinal cross-sectional view which shows the 2nd modification of the light-emitting device which concerns on 5th Embodiment. It is sectional drawing which shows the light-emitting device which concerns on 6th Embodiment. The 1st modification of the light-emitting device which concerns on 6th Embodiment is shown, (a) is a longitudinal cross-sectional view of a light-emitting device, (b) is a side view of the GaN-type LED element which is a light source. The 2nd modification of the light-emitting device which concerns on 6th Embodiment is shown, (a) is a longitudinal cross-sectional view of a light-emitting device, (b) is a side view of the GaN-type LED element which is a light source. The light-emitting device which concerns on 7th Embodiment is shown, (a) is a longitudinal cross-sectional view of a light-emitting device, (b) is a side view of the GaN-type LED element which is a light source. It is a longitudinal cross-sectional view which shows the 1st modification of the light-emitting device which concerns on 7th Embodiment. The light-emitting device which concerns on 8th Embodiment is shown, (a) is a longitudinal cross-sectional view of a light-emitting device, (b) is a side view of the GaN-type LED element which is a light source. It is a longitudinal cross-sectional view which shows the modification of the light-emitting device which concerns on 8th Embodiment. (A) to (e) is a diagram showing a forming process for forming a circuit pattern having an Au layer on an AlN substrate. It is a longitudinal cross-sectional view of the light-emitting device which concerns on 9th Embodiment. It is a figure which shows the state which performed the glass sealing based on a hot press process with respect to a lead frame. It is a figure which shows the state which mounted the GaN-type LED element 2 in Si submount which functions as a Zener diode. The light-emitting device which concerns on 10th Embodiment is shown, (a) is a top view, (b) is (a) AA sectional drawing, (c) is a perspective view of a lower glass. It is sectional drawing which shows the 1st modification of the light-emitting device which concerns on 10th Embodiment. It is sectional drawing which shows the 2nd modification of the light-emitting device which concerns on 10th Embodiment. The light-emitting device which concerns on 11th Embodiment is shown, (a) is a side view, (b) is a perspective view in the case of glass sealing. It is a longitudinal cross-sectional view which shows the light-emitting device based on 12th Embodiment. It is sectional drawing which shows the structure of the face-up type light emitting element used in the Example of this invention. It is a perspective view which shows the assembly body of a light emitting element and a lead | read | reed. It is sectional drawing which shows the manufacturing method of an optical device. It is sectional drawing which shows the optical device of an Example. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is a perspective view which shows the manufacturing method of an optical device. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the manufacturing method of an optical device. It is sectional drawing which shows the structure of a light emitting element of a flip chip type. It is sectional drawing which shows the Example of the optical device using a light emitting element. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is a top view which shows the other aspect of the assembly | attachment body with a flip chip type light emitting element and electric power transmission means. It is sectional drawing which shows the Example of the optical device provided with the assembly | attachment body. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is sectional drawing which shows the optical device of another Example. It is a top view which shows the optical device of another Example. It is sectional drawing which shows the structure of an optical element. It is a figure which shows the manufacturing method of the optical device of a 10th Example. It is a figure which shows the state of the mount of the optical element with respect to a board | substrate. It is a figure which shows the structure of the optical device of a 10th Example. It is a top view which shows the structure of the optical device of another Example. FIG. 61 is a sectional view taken along line BB in FIG. 60. It is CC sectional view taken on the line in FIG. It is a bottom view. It is a top view which shows the optical device of another Example. It is sectional drawing which shows the structure of the optical element of an Example. It is a top view of the optical device of a 12th Example. It is the III-III sectional view taken on the line in FIG. It is a principal part enlarged view in FIG. It is a bottom view of the optical device of an Example. It is a figure which shows the structure of the optical device of another Example. It is a figure which shows the structure of the optical device of another Example. It is a figure which shows the structure of the optical device of another Example. It is a figure which shows the structure of the optical device of another Example. It is a figure which shows the structure of the optical device of another Example. It is sectional drawing which shows the structure of a light emitting element. It is a figure which shows the structure of the light-emitting device of an Example, (A) is sectional drawing, (B) is a top view. It is sectional drawing which shows the structure of the light-emitting device of the Example provided with the sealing member. It is sectional drawing which shows the structure of the light-emitting device of the Example provided with the sealing member of another form. It is sectional drawing which shows the lead frame of another form. It is a top view which shows the lead frame of another form. It is a top view which shows the lead frame of another form. It is a perspective view which shows the lead frame of another form. It is a perspective view which shows the lead frame of another form. It is sectional drawing which shows the structure of the light-emitting device which concerns on 13th Embodiment. It is sectional drawing which shows the modification of the light-emitting device which concerns on 13th Embodiment. It is sectional drawing which shows the light-emitting device based on 14th Embodiment. It is sectional drawing which shows the structure of the light-emitting device which concerns on 15th Embodiment. It is sectional drawing which shows the structure of the light-emitting device based on 16th Embodiment. It is sectional drawing which shows the structure of the light-emitting device based on 17th Embodiment. It is sectional drawing which shows the structure of the light-emitting device based on 18th Embodiment. It is sectional drawing which shows the structure of the light-emitting device based on 19th Embodiment. It is a top view which shows the bump formation surface of the LED element of a standard size. It is a top view which shows the bump formation surface of a large sized LED element. It is sectional drawing which shows the structure of the light-emitting device based on 20th Embodiment. It is a top view which shows the state which mounted the submount in the lead frame. It is a figure which shows the state immediately before performing glass sealing using a metal mold | die. It is sectional drawing which shows the modification of the light-emitting device which concerns on 20th Embodiment. It is sectional drawing which shows the face-up type light-emitting device based on the 21st Embodiment of this invention. The flip-chip type light-emitting device concerning a 22nd embodiment is shown, (a) is a sectional view and (b) is a side view seen from the right side of (a). The face up type light emitting device concerning a 23rd embodiment is shown. (A) is a sectional view and (b) is a side view seen from the right side of (a).

  Hereinafter, a solid-state device according to the present invention will be described in detail with reference to the drawings.

1A and 1B show a light emitting device according to a first embodiment of the present invention, in which FIG. 1A is a longitudinal sectional view of the light emitting device, and FIG. 1B is a side view of a GaN-based LED element as a light source. As shown in FIG. 1A, the light emitting device 1 includes a flip chip type GaN-based LED element 2, a glass-containing Al ₂ O ₃ substrate 3 on which the GaN-based LED element 2 is mounted, and tungsten (W) -nickel. A circuit pattern 4 made of (Ni) -gold (Au) and formed on the glass-containing Al ₂ O ₃ substrate 3; an Au stud bump 5 that electrically connects the GaN-based LED element 2 and the circuit pattern 4; And a P ₂ O ₅ —ZnO-based glass sealing portion 6 that seals the GaN-based LED element 2 and is bonded to the glass-containing Al ₂ O ₃ substrate 3.

As shown in FIG. 1B, the GaN-based LED element 2 includes a buffer layer 21, an n-type layer 22, a layer 23 including a light emitting layer 23, p on the surface of a substrate 20 made of sapphire (Al ₂ O ₃ ). The p-type layer 24 is formed by sequentially growing crystals, and is removed by etching the p-electrode 25 provided on the surface of the p-type layer 24 and part of the p-type layer 24 to the n-type layer 22. And an n-electrode 26 formed on the exposed n-type layer 22. This GaN-based LED element 2 is epitaxially grown at 700 ° C. or higher, has a heat-resistant temperature of 600 ° C. or higher, and is stable with respect to the temperature when sealing processing is performed using low-melting glass described later.

  The p-electrode 25 functions as a lower surface reflecting mirror that reflects light emitted from the layer 23 including the light-emitting layer in the direction of the substrate 20. The size is 0.34 mm 0.34 mm × thickness 0.09 mm.

The glass-containing Al ₂ O ₃ substrate 3 has a coefficient of thermal expansion of 12.3 × 10 ⁻⁶ / ° C. and has a via hole 3A. The via hole 3A conducts the circuit pattern 4 made of metallized W on the front surface and the back surface of the substrate.

The glass sealing part 6 is a P ₂ O ₅ —ZnO-based low-melting glass (thermal expansion coefficient: 11.4 × 10 ⁻⁶ / ° C., yield point: 415 ° C., refractive index: 1.59, internal transmittance: 99% (470 nm)), and has a top surface 6A and a side surface 6B based on being cut with a dicer after being bonded to the glass-containing Al ₂ O ₃ substrate 3 by hot pressing with a mold. It is formed into a shape.

Low melting glass is processed with a viscosity that is orders of magnitude higher than the level generally referred to as high viscosity in resins. In the case of glass, the viscosity does not decrease to a general resin sealing level even if the yield point exceeds several tens of degrees Celsius. Further, if the viscosity is set to a level at the time of general resin molding, it requires a temperature exceeding the crystal growth temperature of the LED element or adheres to the mold, and sealing / molding processing becomes difficult. For this reason, it is preferable to process at 10 ⁶ poise or more.

  A method for manufacturing the light emitting device 1 will be described below.

First, a glass-containing Al ₂ O ₃ substrate 3 having via holes 3A is prepared, and W paste is screen-printed on the surface of the glass-containing Al ₂ O ₃ substrate 3 according to a circuit pattern. Next, the glass-containing Al ₂ O ₃ substrate 3 printed with the W paste is heat-treated at a temperature of 1000 ° C. to burn W on the substrate 3, and further, Ni plating and Au plating are performed on the W to form the circuit pattern 4. Form. Next, the GaN-based LED element 2 is electrically bonded to the circuit pattern 4 (surface side) of the glass-containing Al ₂ O ₃ substrate 3 by Au stud bumps 5. Next, a plate-like P ₂ O ₅ —ZnO-based low melting glass is set in parallel to the glass-containing Al ₂ O ₃ substrate 3 on which the GaN-based LED element 2 is mounted, and the pressure is set to 60 kgf in a nitrogen atmosphere. Hot pressing is performed at a temperature of 465 ° C. The viscosity of the low-melting glass under these conditions is 10 ⁸ to 10 ⁹ poise, and the low-melting glass is bonded to the glass-containing Al ₂ O ₃ substrate 3 via the oxide contained therein. Next, the glass-containing Al ₂ O ₃ substrate 3 integrated with the low-melting glass is set on a dicer and diced to separate the rectangular light emitting device 1.

  According to the first embodiment described above, the following effects are obtained.

(1) By using a low-melting glass and hot pressing in a high viscosity state, processing sufficiently lower than the crystal growth temperature is possible.

(2) A strong sealing strength can be obtained by bonding the glass-containing Al ₂ O ₃ substrate 3 and the glass sealing portion 6 on the basis of a chemical bond via an oxide. Therefore, even a small package with a small bonding area can be realized.

(3) Since the sealing glass and the glass-containing Al ₂ O ₃ substrate have the same thermal expansion coefficient, poor adhesion such as peeling and cracking hardly occurs even after being bonded at a high temperature and at a normal temperature or a low temperature. Moreover, cracks do not occur in tensile stress in glass, but cracks do not easily occur in compressive stress, and sealing glass has a slightly lower thermal expansion coefficient than glass-containing Al ₂ O ₃ substrate. According to the inventor's confirmation, peeling and cracking did not occur even in 1000 cycles of the liquid phase cooling / heating impulse test of −40 ° C. ← → 100 ° C. In addition, as a basic confirmation of the bonding of a 5 mm × 5 mm glass piece to a ceramic substrate, the results of experiments with various combinations of thermal expansion coefficients for glass and ceramic substrates showed that the lower one for the member with the higher thermal expansion coefficient. When the ratio of the coefficient of thermal expansion of the members was 0.85 or more, it was possible to perform bonding without causing cracks. Although it depends on the rigidity and size of the member, the stress absorption layer of the eighth embodiment, and the like, the fact that the thermal expansion coefficients are equal indicates this range.

(4) Since a wire can be dispensed with by flip-chip bonding, there is no problem with electrodes even when processing in a high viscosity state. Since the viscosity of the low melting point glass at the time of sealing is as hard as 10 ⁸ to 10 ⁹ poise and the physical properties are significantly different from that of the epoxy resin before the thermosetting treatment is about 5 poise, the electrode on the surface of the element When a face-up type LED element that electrically connects a power supply member such as a lead with a wire is sealed, the wire is crushed or deformed during glass sealing, which can be prevented. Further, when sealing a flip chip type LED element in which an electrode on the element surface is flip chip bonded to a power supply member such as a lead via a bump such as gold (Au), the power supply member is connected to the LED element based on the viscosity of the glass. A pressure in the direction is applied, which causes collapse of the bumps and short circuit between the bumps, which can also be prevented.

(5) The low-melting point glass and the glass-containing Al ₂ O ₃ substrate 3 are set in parallel and hot-pressed in a high-viscosity state, so that the low-melting point glass moves parallel to the surface of the glass-containing Al ₂ O ₃ substrate. In order to seal the GaN-based LED element 2, no void is generated.

(6) Since the circuit pattern 4 for wiring of the glass-containing Al ₂ O ₃ substrate 3 is drawn out to the back surface by the via hole 3A, special measures such as entering into an unnecessary part or covering an electrical terminal, etc. A plurality of light emitting devices 1 can be easily mass-produced based on a dicer cut only by collectively sealing a plate-like low melting point glass to a plurality of devices without taking any measures. Since low-melting glass is processed in a high-viscosity state, it is not necessary to take sufficient measures as in the case of a resin, and it is possible to sufficiently support mass production if the external terminals are pulled out to the back surface without using via holes. .

(7) The flip-chip mounting of the GaN-based LED element 2 overcomes the problems associated with realizing glass sealing and has the effect of realizing an ultra-small light emitting device 1 of 0.5 mm square. is there. This is because the bonding space of the wire is unnecessary, and the glass sealing portion 6 and the glass-containing Al ₂ O ₃ substrate 3 are selected to have the same thermal expansion coefficient member, and by strong bonding based on chemical bonding, This is because even if the bonding is performed in a small space, no interfacial peeling occurs.

  FIG. 2 shows a first modification of the light emitting device according to the first embodiment, wherein (a) is a longitudinal sectional view of the light emitting device, and (b) is a side view of a GaN-based LED element as a light source. . In the following description, common components will be described with the same reference numerals.

  The light emitting device 1 includes a face-up GaN-based LED element 2 flip-chip bonded to a circuit pattern 4 and a white underfill 7 that protects the electrodes of the GaN-based LED element 2 and Au stud bumps 5. The configuration is different from that of the first embodiment.

For the underfill 7, for example, a filler with good light reflectivity such as boron nitride (BN) can be used, and it is potted on the glass-containing Al ₂ O ₃ substrate 3 in advance before bonding the GaN-based LED element 2. The GaN-based LED element 2 is provided thereon by flip-chip bonding.

  The GaN-based LED element 2 is provided on the surface of the translucent electrode 27 and the translucent electrode 27 such as ITO (Indium Tin Oxide) provided on the surface of the p-type layer 24 as shown in FIG. P electrode 25.

  According to the first modification described above, the light reflected and diffused by the underfill 7 is emitted from the substrate 20 of the GaN-based LED element 2 even in the face-up GaN-based LED element 2, The take-out property is improved. In the second embodiment, the white underfill 7 is selected to enhance the light extraction efficiency. However, if the light extraction efficiency is not important, the underfill 7 of a color other than the white color is used. May be.

As a second modification, the surface of the glass sealing portion 6 may be subjected to a surface treatment for improving moisture resistance, acid resistance and alkali resistance. In this case, MgF ₂ , SiO ₂ , SiN surface treatment is effective. Also, a process for reducing interface reflection by an antireflection multilayer film or the like may be used. In this case, a TiO ₂ + SiO ₂ multilayer coating is effective.

  FIG. 3 is a longitudinal sectional view showing a light emitting device using another underfill as a third modification. In the light emitting device 1 of the third modification, diamond having good thermal conductivity is used as the underfill 7 that protects the electrode of the GaN-based LED element 2 and the Au stud bump 5. In addition, BN, aluminum nitride (AlN), and silicon carbide (SiC) can be used as the other underfill 7 having good thermal conductivity. These are mixed in the heat-resistant ceramic coating material as a filler having an average particle size of several microns.

  FIG. 4 is a longitudinal sectional view showing a light emitting device provided with a mold part made of a resin material as a fourth modification. In the light emitting device 1, the light emitting device 1 described in the first embodiment is bonded to a lead frame 8, and a mold portion 9 made of an epoxy resin is provided as a whole.

  The mold part 9 has a hemispherical optical shape surface 9A and is formed by a transfer molding method.

According to such a configuration, the optical system can be easily formed in the glass-sealed device, and the glass-containing Al ₂ O ₃ substrate 3 and the glass sealing portion 6 are surrounded by the mold portion 9. Moisture resistance is further improved. The mold part 9 may be formed of a resin material other than an epoxy resin, for example, a silicon resin, and a molding technique such as a potting mold method other than the transfer molding method may be applied. Further, it can be formed by an injection method using a resin material such as acrylic or polycarbonate. In this case, productivity can be improved.

  Moreover, you may make the mold part 9 contain a fluorescent substance. The phosphor may be a YAG phosphor, a silicate phosphor, or a mixture of these at a predetermined ratio.

FIG. 5 is a longitudinal sectional view showing a light emitting device according to the second embodiment. In this light emitting device 1, instead of the glass material used in the light emitting device 1 of the first embodiment, a configuration in which a SiO ₂ —Nb ₂ O ₅ based glass sealing portion 6 is provided, and a glass-containing Al ₂ O ₃ The difference is in the configuration in which the substrate 3 is provided with the Ag-based circuit pattern 4.

SiO ₂ —Nb ₂ O ₅ -based glass sealing portion 6 is composed of SiO ₂ —Nb ₂ O ₅ -based low melting glass (thermal expansion coefficient: 12.1 × 10 ⁻⁶ / ° C., yield point: 507 ° C., refractive index. : 1.69, internal transmittance: 98% (470 nm)), and the upper surface 6A based on being cut with a dicer after being bonded to the glass-containing Al ₂ O ₃ substrate 3 based on hot pressing. And it has a side surface 6B and is molded into a rectangular shape.

The glass-containing Al ₂ O ₃ substrate 3 has a coefficient of thermal expansion of 12.3 × 10 ⁻⁶ / ° C. and has a via hole 3A. The via hole 3A allows the circuit pattern 4 of Ag by electroplating to be conducted on the front and back surfaces of the substrate.

According to the second embodiment described above, by using the SiO ₂ —Nb ₂ O ₅ -based low melting point glass, moisture permeability can be reduced and light extraction can be improved. In addition, by using a low-melting-point glass having low moisture permeability, for example, when a voltage is applied and the pattern interval is several tens of microns as in a circuit pattern for flip-chip mounting the GaN-based LED element 2 As described above, Ag, which is a highly reflective material, can be used even in places where application is difficult due to concern about migration in resin sealing.

FIG. 6 is a longitudinal sectional view of a light emitting device according to the third embodiment of the present invention. The light emitting device 1, the formation of the GaN-based LED element 2 in face-up type, a glass-containing _Al 2 _{O 3} substrate 3 for mounting the GaN-based LED element 2, consists of a W in the glass-containing _Al 2 _{O 3} substrate 3 And the Au stud bump 5 that electrically connects the GaN-based LED element 2 and the circuit pattern 4, and Au that electrically connects the electrode of the GaN-based LED element 2 and the circuit pattern 4. A heat-resistant inorganic material coating 11 that surrounds and coats the wire 10, the GaN-based LED element 2, the wire 10, and the circuit pattern 4; an inorganic white adhesive 12 that bonds the GaN-based LED element 2 to the circuit pattern 4; It has a P ₂ O ₅ —ZnO-based glass sealing portion 6 that is sealed and bonded to the glass-containing Al ₂ O ₃ substrate 3.

The heat resistant inorganic material coat 11 is a porous SiO ₂ hard coat having translucency, and prevents the wire 10 from being deformed in the sealing process of the P ₂ O ₅ —ZnO glass.

  The inorganic white adhesive 12 reflects light emitted from the GaN-based LED element 2 to the substrate side and emits it from the electrode forming surface.

  A method for manufacturing the light emitting device 1 will be described below.

First, a glass-containing Al ₂ O ₃ substrate 3 having via holes 3A is prepared, and W paste is screen-printed on the surface of the glass-containing Al ₂ O ₃ substrate 3 according to a circuit pattern. Next, the glass-containing Al ₂ O ₃ substrate 3 printed with the W paste is heat-treated at 1500 ° C. to burn W onto the substrate 3, and further, Ni plating and Au plating are performed on the W to form the circuit pattern 4. To do. Next, the GaN-based LED element 2 is bonded to the circuit pattern 4 (surface side) of the glass-containing Al ₂ O ₃ substrate 3 with an inorganic white adhesive 12. Next, the p electrode and the n electrode of the GaN-based LED element 2 and the circuit pattern 4 are electrically joined by the wire 10. Next, a SiO ₂ -based coating material is potted so as to surround the GaN-based LED element 2 and the wire 10. Next, these are subjected to heat treatment at 150 ° C. to form a porous heat-resistant inorganic material coat 11. Next, P ₂ O ₅ —ZnO-based low melting glass is set in parallel to the glass-containing Al ₂ O ₃ substrate 3 on which the GaN-based LED element 2 is mounted, and the pressure is set to 60 kgf and hot at a temperature of 415 ° C. or higher. Press work. Next, the glass-containing Al ₂ O ₃ substrate 3 integrated with the low-melting glass is set on a dicer and diced to separate the rectangular light emitting device 1.

According to the third embodiment described above, by coating the wire 10 with the heat-resistant inorganic material coating 11 having translucency, the P ₂ O _{5 can be obtained} at a high yield with respect to the GaN-based LED element 2 to which the wire is bonded. Glass sealing with a ZnO-based low melting point glass becomes possible, and the glass-sealed light emitting device 1 can be realized.

  Although the glass sealing process can be realized without providing the heat-resistant inorganic material coat 11, it is inevitable that the wire 10 is deformed, so that an electrical short circuit is likely to occur and the yield is lowered. In addition, the ball-shaped joint portion of the Au wire 10 is crushed on the GaN-based LED element 2 to easily cause an electrical short circuit, and the film-like Au covers the element surface and hinders light extraction. Is also likely to occur.

  FIG. 7 is a longitudinal sectional view showing a modification of the light emitting device according to the third embodiment. The light emitting device 1 is different from the third embodiment in the configuration using the AlInGaP-based LED element 2 having electrodes on the upper and lower sides of the element.

  In the AlInGaP-based LED element 2, the upper electrode and the circuit pattern 4 are electrically connected by a wire 10, and the lower electrode and the circuit pattern 4 are electrically connected by an Ag paste 13.

As described above, the LED element having the electrodes arranged on the upper surface and the lower surface also has a high yield by applying the heat resistant inorganic material coat 11 and performing the glass sealing process with the P ₂ O ₅ —ZnO-based low melting point glass. The glass-sealed light emitting device 1 can be realized.

  FIG. 8 is a longitudinal sectional view showing a light emitting device according to the fourth embodiment. This light-emitting device 1 uses the GaN-based LED element 2 used in the light-emitting device 1 of the first embodiment formed based on scribe processing. The GaN-based LED element 2 formed by the scribing process is configured by covering the side surface with the element coating material 14 because it has sharp irregularities on the side surface which is a cut portion.

As the element coating material 14, for example, a SiO ₂ -based coating material can be used. The SiO ₂ -based coating material is coated so as to cover the side surface of the GaN-based LED element 2, and is cured by heat treatment at 150 ° C.

  According to the above-described fourth embodiment, the pointed uneven portions generated in the GaN-based LED element 2 by the scribing process are likely to cause cracks and voids, so that the uneven portions are covered with the element coating material 14 material. By making it smooth, the occurrence of cracks can be prevented. Moreover, generation | occurrence | production of a void can also be suppressed.

FIG. 9 is a longitudinal sectional view showing a first modification of the light emitting device according to the fourth embodiment. This light emitting device 1 is different from the fourth embodiment in that the light emitting device 1 is configured to be covered with an element coating material 14 made of a SiO ₂ coating material so as to cover the entire periphery of the GaN-based LED element 2.

As the element coating material 14, a glass having a high thermal expansion coefficient was used by setting the thermal expansion coefficient between the thermal expansion coefficient of the GaN-based LED element 2 and the thermal expansion coefficient of the P ₂ O ₅ —ZnO low-melting glass. In this case, cracks can be prevented from occurring even when a large-size LED element is used.

  According to the first modification described above, the generation of cracks and voids due to the shape of the surface of the GaN-based LED element 2 is suppressed, and cracks due to the difference in thermal expansion coefficient between the GaN-based LED element 2 and the low melting point glass are reduced. Occurrence can be prevented. In consideration of the light extraction performance from the GaN-based LED element 2, it is preferable to provide the element coating material 14 as thin as possible.

  FIG. 10 is a longitudinal sectional view showing a second modification of the light emitting device according to the fourth embodiment. The light emitting device 1 is different from the fourth embodiment in that the light emitting device 1 is configured to be covered with a phosphor layer 15 containing a phosphor so as to cover the entire periphery of the GaN-based LED element 2.

The phosphor layer 15 is obtained by adding a YAG phosphor as a phosphor to the element coating material 14 made of the SiO ₂ coating material used in the first modification. The phosphor may be a single phosphor or a mixture of a plurality of types of phosphors. As another phosphor, a silicate phosphor can be used, and a YAG phosphor and a silicate phosphor may be mixed and contained in the phosphor layer 15.

  According to the second modification described above, in addition to the preferable effects of the first modification, since the phosphor is shielded from external moisture by glass sealing, the phosphor can be prevented from deteriorating and has a stable wavelength over a long period of time. Convertibility is obtained.

11A and 11B show a light emitting device according to a fifth embodiment, where FIG. 11A is a plan view of the light emitting device, FIG. 11B is a side view of the light emitting device, and FIG. 11C is a bottom view of the light emitting device. The light-emitting device 1 includes a plurality of flip-chip type GaN-based LED elements 2, a glass-containing Al ₂ O ₃ substrate 3 having a multilayer structure on which the GaN-based LED elements 2 are mounted, and glass-containing Al _2. A circuit pattern formed of tungsten (W) in the surface and layer of the O ₃ substrate 3 (the substrate surface pattern is further subjected to Ni and Au plating) 4 and the GaN-based LED element 2 and Au stud bump 5 for electrically connecting the circuit pattern 4, _P 2 _O 5 -ZnO-based glass sealing portion which is bonded to the glass-containing _Al 2 _{O 3} substrate 3 with sealing the GaN-based LED element 2 6, bottom circuit patterns 16 </ b> A (anode) and 16 </ b> C (cathode) exposed from the intermediate layer in the four corners of the glass-containing Al ₂ O ₃ substrate 3, and the GaN-based LED element 2. 3 × 3 through Au stud bumps 5 on circuit pattern 4 formed on the substrate surface so as to have a circular outer shape, and heat dissipation pattern 17 made of copper foil that dissipates heat based on heat generation to the outside. A total of nine GaN-based LED elements 2 are arranged in the arrangement.

The glass-containing Al ₂ O ₃ substrate 3 has a multilayer structure having an intra-layer wiring made of W, and is formed by connecting three GaN-based LED elements 2 in the column direction shown in FIG. 11B in series. A group is formed, and the anode of the element group is connected to one of the bottom circuit patterns 16A, and the cathode of the element group is connected to the bottom circuit pattern 16C. The cathodes of the element groups formed for the other two rows are also connected to the cathode.

  According to the fifth embodiment described above, even when a plurality of GaN-based LED elements 2 are used, a series / parallel circuit can be easily formed by using a ceramic multilayer substrate. The wiring can be easily formed. In addition, by taking out the external electrical connection terminal from the intermediate layer and providing a metal pattern for heat dissipation on the bottom surface, heat generated based on light emission of the nine closely mounted GaN-based LED elements 2 can be generated from the metal pattern for heat dissipation. It becomes possible to conduct heat quickly to a heat sink or the like.

FIG. 12 is a longitudinal sectional view showing a first modification of the light emitting device according to the fifth embodiment. This light emitting device 1 is different from the fifth embodiment in that a wavelength conversion type light emitting device 1 is provided by providing a phosphor layer 15 on the surface of the P ₂ O ₅ —ZnO-based glass sealing portion 6. .

According to the first modification described above, the P ₂ O ₅ —ZnO-based glass sealing portion 6 includes the phosphor layer 15 surrounding the entire GaN-based LED element 2, and thus the white light emitting device 1 with high light output. Can be realized. In addition, even if there is a variation in the LED element characteristics in the multi-element type light emitting device 1, the difference is not prominent, and the light emitting device 1 having uniform light emitting characteristics can be realized.

FIG. 13 is a longitudinal sectional view showing a second modification of the light emitting device according to the fifth embodiment. In this light emitting device 1, a flip chip type GaN LED element 2 that emits blue or green light and an upper electrode type AlInGaP LED element 2 that emits red light are mixed to form a P ₂ O ₅ —ZnO glass seal. This is different from the fifth embodiment in that it is sealed with the stopper 6. The AlInGaP-based LED element 2 is surrounded with a wire 10 by a heat resistant inorganic material coat 11.

According to the second modification described above, glass sealing with P ₂ O ₅ —ZnO-based low-melting glass can be performed even when flip-chip and upper / lower electrode type LED elements are mixed. In addition, it can set arbitrarily also about the combination of the luminescent color of the LED element 2. FIG.

FIG. 14 is a cross-sectional view showing a light emitting device according to the sixth embodiment. The light emitting device 1 includes a AlInGaP-based LED element 2 having an electrode on the upper and lower elements, AlInGaP-based LED element 2 and the glass-containing _Al 2 _{O 3} substrate 3 for mounting a, is composed of W and the glass-containing _Al 2 _{O 3} substrate 3, a wire 10 made of Au that electrically connects the electrode of the AlInGaP LED element 2 and the circuit pattern 4, and the AlInGaP LED element 2, the wire 10, and the circuit pattern 4. High refractive index material coat 11A made of TiO ₂ (refractive index: 2.4) to be surrounded and coated, Ag paste 13 for bonding and electrically connecting the AlInGaP-based LED element 2 to the circuit pattern 4, and high refraction glass-containing _Al 2 _{O 3} substrate with the rate material AlInGaP-based LED element 2 surrounded by coating 11A seals Having _SiO 2 _-Nb 2 _{O 5} -based glass sealing part 6 to be bonded with.

The SiO ₂ —Nb ₂ O ₅ -based glass sealing portion 6 is composed of SiO ₂ —Nb ₂ O ₅ -based low melting glass (thermal expansion coefficient: 10.2 × 10 ⁻⁶ / ° C., yield point: 543 ° C., refractive index. 1.92, internal transmittance: 81% (470 nm), 91% (520 nm (at a thickness of 10 mm)), and has an optically shaped surface 6D formed in a hemispherical shape. The light emitted from the LED element 2 and passing through the high refractive index material coat 11A is incident on the glass interface substantially perpendicularly, thereby reducing the interface reflection as much as possible and radiating to the outside.

  The optical shape surface 6D may have a shape other than a hemisphere as long as the light emitted from the AlInGaP-based LED element 2 is incident within a critical angle with respect to the interface of the glass sealing portion 6. Specifically, it may be a hexahedron or an octahedron.

According to the sixth embodiment described above, the AlInGaP-based LED element 2 is surrounded by the high refractive index material coat 11A of TiO ₂ having a refractive index of 2.4, and SiO ₂ —Nb ₂ O ₅ having a refractive index of 1.92. Since it is sealed with the system glass sealing part 6, it is possible to suppress the occurrence of interface reflection loss at the interface between the high refractive index material coat 11 </ b> A and the SiO ₂ —Nb ₂ O ₅ system glass sealing part 6. The light extraction efficiency from the LED element which is a refractive index medium can be improved.

Further, since the SiO ₂ —Nb ₂ O ₅ -based glass sealing portion 6 is formed in a convex shape, the AlInGaP-based LED element 2 is incident on the interface between the glass sealing portion 6 and the air at an angle close to normal incidence. As a result, high external radiation efficiency can be obtained.

FIG. 15 shows a first modification of the light emitting device according to the sixth embodiment, where (a) is a longitudinal sectional view of the light emitting device, and (b) is a side view of a GaN-based LED element as a light source. . This light-emitting device 1 includes a GaN-based LED element 2 having a SiC substrate 29 in place of the AlInGaP-based LED element 2, and the surface of the SiO ₂ —Nb ₂ O ₅ -based glass sealing portion 6 has a quarter wavelength. This is different from the sixth embodiment in having an optical shape surface 6D provided with a SiO ₂ film 6E having a thickness.

  The SiC substrate 29 has an n-electrode 26 on the bottom surface and is electrically connected to the circuit pattern 4 via the Ag paste 13.

According to the first modification described above, since the SiO ₂ film 6E having a thickness corresponding to ¼ wavelength is provided on the optical shape surface 6D, the light guided to the optical shape surface 6D interferes with the SiO ₂ film 6E. By doing so, reflection can be reduced.

  FIG. 16 shows a second modification of the light emitting device according to the sixth embodiment, where (a) is a longitudinal sectional view of the light emitting device, and (b) is a side view of a GaN-based LED element as a light source. . The light emitting device 1 is different from the sixth embodiment in that a flip chip type GaN LED element 2 having a GaN substrate 30 is used instead of the AlInGaP LED element 2.

According to the second modification described above, by using the GaN-based LED element 2 having the GaN substrate 30, light can be efficiently guided to the substrate surface without causing interface reflection inside the LED element. The light guided to the substrate surface is externally radiated from the optical shape surface 6D through the SiO ₂ —Nb ₂ O ₅ based glass sealing part 6, thereby obtaining high external radiation efficiency.

FIG. 17 shows a light emitting device according to a seventh embodiment, wherein (a) is a longitudinal sectional view of the light emitting device, and (b) is a side view of a GaN-based LED element as a light source. In this light emitting device 1, the substrate is replaced with Al ₂ O ₃ instead of glass-containing Al ₂ O ₃ and the sealing glass material corresponding to the thermal expansion coefficient of this Al ₂ O ₃ is used. It is different from the form. The figure shows a state before being divided into individual devices. As shown in FIG. 17A, each light-emitting device 1 includes a flip chip type GaN-based LED element 2, an Al ₂ O ₃ substrate 3 on which the GaN-based LED element 2 is mounted, and an Al ₂ O ₃ substrate 3. The formed circuit pattern 4, the Au stud bump 5 that electrically connects the GaN-based LED element 2 and the circuit pattern 4, and the GaN-based LED element 2 are sealed and bonded to the Al ₂ O ₃ substrate 3. And a B ₂ O ₃ —F-based glass sealing portion 6.

GaN-based LED element 2, the Au damage stud bump 5, to prevent short circuit between electrodes, _Al 2 _{O 3} substrate 3 during encapsulation processing of _B 2 _O 3 -F-based glass as shown in (b) Underfill 7 is filled in between.

The Al ₂ O ₃ substrate 3 has a via hole 3A, and the circuit patterns 4 on the front surface and the back surface are electrically connected through the via hole 3A. Moreover, the groove | channel 3B used as a board | substrate parting position is formed with the predetermined space | interval.

The circuit pattern 4 has bonding patterns 4A and 4B that increase the bonding strength with the B ₂ O ₃ -F-based glass sealing portion 6 on the surface on which the GaN-based LED element 2 is mounted. It also serves as a part of the circuit pattern 4 taken out on the back surface of the Al ₂ O ₃ substrate 3.

The B ₂ O ₃ —F-based glass sealing portion 6 is made of B ₂ O ₃ —F-based low melting glass (thermal expansion coefficient: 6.9 × 10 ⁻⁶ / ° C., yield point: 539 ° C., refractive index: 1 .75, internal transmittance: 98% (470 nm)), and Al ₂ O ₃ by hot pressing a preform glass provided with an optical shape surface 6D and a thin portion 6B in advance by preform processing. Bonded to the surface of the substrate 3. The thin-walled portion 6B is formed with a thickness that does not cause damage such as cracks to the adjacent light emitting device 1 when a load is applied to the scribe processing portion and divided.

The light-emitting device 1 mounts the GaN-based LED element 2 and seals it with the B ₂ O ₃ —F-based glass sealing portion 6, and then applies a load with the groove 3 B of the Al ₂ O ₃ substrate 3 as a dividing position. Based on the stress concentration, the Al ₂ O ₃ substrate 3 is broken, and at the same time, the B ₂ O ₃ -F-based glass sealing portion 6 is divided at the thin portion 6B.

According to the seventh embodiment described above, by using an Al ₂ O ₃ substrate that is generally used, white light absorption is reduced and light extraction efficiency is improved. Moreover, it is easy to obtain and inexpensive. In addition, since a load is applied to the scribe portion and the light emitting device 1 is divided, the mass productivity is excellent. In the division of the light emitting device 1 by dicing, residual strain to the glass is generated when cutting with a dicer, and the B ₂ O ₃ —F-based glass sealing portion 6 may be chipped by heat shock. In the light-emitting device 1 divided in this manner, the residual strain is small, and defects such as chipping are unlikely to occur.

In addition, as a low melting glass other than the B ₂ O ₃ —F system, SiO ₂ —B ₂ O ₃ —La ₂ O ₃ system low melting glass (thermal expansion coefficient: 8.3 × 10 ⁻⁶ / ° C., yield point: 559 ° C., refractive index: 1.81, internal transmittance: 99% (470 nm)) can also be used.

  As another dividing method other than scribing, it is also possible to perform division using a laser beam.

FIG. 18 is a longitudinal sectional view showing a first modification of the light emitting device according to the seventh embodiment. The light emitting device 1 is different from the seventh embodiment in that the B ₂ O ₃ -F glass sealing portion 6 is formed of flat B ₂ O ₃ -F low melting point glass. .

The B ₂ O ₃ —F-based SiO ₂ —B ₂ O ₃ glass sealing portion 6 has a scribing portion 6 C at a position facing the groove 3 B formed in the Al ₂ O ₃ substrate 3, and a load is applied. When this is done, the B ₂ O ₃ —F-based glass sealing portion 6 and the Al ₂ O ₃ substrate 3 are separated by generating stress concentration in cooperation with the grooves 3B.

According to the first modified example described above, the preform of the B ₂ O ₃ —F-based glass sealing part 6 is not required, the manufacturing process can be simplified, and the productivity is excellent.

Further, as another low melting point glass applicable to the glass sealing portion 6, it is also possible to use SiO ₂ —B ₂ O ₃ based low melting point glass.

FIG. 19 shows a light emitting device according to an eighth embodiment, wherein (a) is a longitudinal sectional view of the light emitting device, and (b) is a side view of a GaN-based LED element as a light source. The light-emitting device 1 seals the GaN-based LED element 2 and the AlN substrate 3 on which the GaN-based LED element 2 is mounted, the BN underfill 7 having excellent thermal conductivity, and the AlN substrate 2. The present embodiment is different from the seventh embodiment in that it has a SiO ₂ —B ₂ O ₃ glass sealing portion 6 having a thermal expansion coefficient equivalent to that of AlN bonded to the substrate 3.

The SiO ₂ —B ₂ O ₃ -based glass sealing part 6 is composed of SiO ₂ —B ₂ O ₃ -based low melting glass (thermal expansion coefficient: 4.9 × 10 ⁻⁶ / ° C., yield point: 558 ° C., refractive index: 1.61, internal transmittance: 96% (380 nm)), and the thermal expansion coefficient of the GaN-based LED element 2 is approximately the same as that of 5 × 10 ⁻⁶ / ° C.

According to the above-described eighth embodiment, the heat generated based on the light emission of the GaN-based LED element 2 passes through the underfill 7 and Au stud bump 5 excellent in thermal conductivity, and the AlN substrate 3 made of a high heat dissipation material. Heat is transferred to the outside and efficiently radiated to the outside. Further, the main members such as the GaN-based LED element 2, the AlN substrate 3, the SiO ₂ —B ₂ O ₃ -based glass sealing portion 6 have substantially the same thermal expansion coefficient, so that peeling and sealing performance due to the difference in thermal expansion coefficient are achieved. This does not cause a decrease.

  For example, even when there is a difference in coefficient of thermal expansion between the main members, it is possible to absorb internal stress by providing a structure that achieves stress relaxation, thereby preventing deterioration in sealing performance and peeling.

  FIG. 20 is a longitudinal sectional view showing a modification of the light emitting device according to the eighth embodiment. The light emitting device 1 is different from the seventh embodiment in that a soft metal layer for absorbing internal stress is provided on the surface of the circuit pattern 4 on which the GaN-based LED element 2 is mounted.

  FIGS. 21A to 21E are views showing a forming process for forming a circuit pattern on an AlN substrate. First, as shown in (a), a paste containing W corresponding to the circuit pattern is screen-printed on both surfaces of the AlN substrate 3 in which the via holes 3A are formed in advance. Next, the AlN substrate 3 is sintered at a temperature exceeding 1500 ° C., and W is baked. Thereby, W and the AlN substrate 3 are firmly bonded. It is also possible to form this W by sputtering. Further, instead of W, a refractory metal such as Mo may be used. Next, as shown in (b), a nickel (Ni) layer 26 is provided on the circuit pattern 4 on the surface side of the AlN substrate 3 by plating. Next, as shown in (c), the AlN substrate 3 is heated at about 700 ° C. to react Ni and W. Thereby, the circuit pattern 4 is firmly bonded on the AlN substrate 3. Next, as shown in (d), an Au layer 4C is formed on the surface of the circuit pattern 4 by electrolytic plating. Next, as shown in (e), the GaN-based LED element 2 is mounted at a predetermined position by the Au stud bump 5.

The SiO ₂ —B ₂ O ₃ -based low-melting glass is hot-pressed on the AlN substrate 3 on which the GaN-based LED element 2 is mounted on the circuit pattern 4 in this way, and the individual light emitting devices 1 based on the scribe. Divide into

  According to the above-described modification, the strong circuit pattern 4 can be bonded to the AlN substrate 3. Further, by providing the Au pattern 4C for mounting the GaN-based LED element 2 via the Au stud bump and the Ni pattern 4A for bonding to the low melting point glass on the circuit pattern 4, it becomes possible to mount the stud bump. And stress relaxation can be aimed at. Glass is bonded via an oxide and not bonded to Au, but is bonded to Ni via a Ni oxide film on the Ni surface. Also, good bonding can be obtained with both glass and AlN. Since the AlN substrate has a high thermal conductivity, a temperature difference from the glass tends to occur immediately after the GaN-based LED element 2 is turned on, but even in such a situation, the stress is relaxed and stabilized based on the elastic deformation of the Au layer 4C. Glass sealing property is obtained.

FIG. 22 is a longitudinal sectional view of the light emitting device according to the ninth embodiment. The light emitting device 1 includes a flip-chip GaN-based LED element 2, an AlN submount 18 on which the GaN-based LED element 2 is mounted, a circuit pattern 4 made of W and formed on the AlN submount 18, an AlN A lead 19 made of a copper alloy having a step portion 19A on which the submount 18 is mounted, an Au stud bump 5 that electrically connects the GaN-based LED element 2 and the circuit pattern 4, and the GaN-based LED element 2 and the lead 19 And a P ₂ O ₅ -F-based glass sealing portion 6 that surrounds and integrally seals.

  The AlN submount 18 has a metallized circuit pattern.

The P ₂ O ₅ —F-based glass sealing part 6 is composed of a P ₂ O ₅ —F-based low-melting glass (thermal expansion coefficient: 16.9 × 10 ⁻⁶ / ° C., yield point: 363 ° C., refractive index: 1. 54, internal transmittance: 99% (470 nm)), an optically shaped surface 6D which is formed in a hemispherical shape and emits light in a desired radiation range is formed based on hot pressing.

In hot pressing, two P ₂ O ₅ -F low melting point glasses are set in parallel so as to sandwich the lead 19 formed on the lead frame, and the pressure is 10 kgf in a nitrogen atmosphere at a temperature of 410 ° C. or higher. Do. The viscosity of the low melting point glass under these conditions is 10 ⁸ to 10 ⁹ poise.

  FIG. 23 is a diagram illustrating a state where glass sealing based on hot pressing is performed on the lead frame. In the drawing, a lead frame 31 made of a plate-like copper alloy with a pair of leads 311 drawn in one direction is shown. The lead frame 31 includes a lead 311 for fixing the AlN submount 18, an opening 312 provided on the support side of the lead 311, an oval hole 313 for absorbing thermal deformation of the lead frame 31, and a feed position of the lead frame 31. Positioning holes 314 for positioning, and the periphery of the lead 311 is removed as an opening 310 when a plate-shaped copper alloy is punched.

  Below, the manufacturing method of the light-emitting device 1 is demonstrated.

First, the lead frame 31 having the leads 19 on which the step portions 19A for mounting the AlN submount 18 are formed is formed. Next, the AlN submount 18 on which the circuit pattern 4 is formed is joined to the lead frame 31. Next, the GaN-based LED element 2 is flip-chip bonded to the circuit pattern 4 provided on the surface of the AlN submount 18 via the Au stud bump 5. Next, P ₂ O ₅ -F-based low melting point glass is set in parallel on the top and bottom of the lead frame 31. Next, hot pressing is performed on the P ₂ O ₅ -F-based low-melting glass using a mold (not shown). The P ₂ O ₅ -F-based low-melting glass is individually formed into the thin wall portion 6B and the P ₂ O ₅ -F-based glass sealing portion 6 based on hot pressing. Next, the lead 311 is cut and separated from the lead frame 31 as a light emitting device.

  According to the ninth embodiment described above, the following effects are obtained.

(1) Since hot pressing is performed in a high-viscosity state using P ₂ O ₅ -F-based low-melting glass, glass sealing at a crystal growth temperature or lower is possible.

(2) Since hot pressing is performed in a nitrogen atmosphere, each member is difficult to oxidize.

(3) Since two pieces of glass are set so as to sandwich the lead, they are sealed in a highly viscous state.

(4) Since the P ₂ O ₅ -F-based low-melting glass and the copper alloy lead have substantially the same coefficient of thermal expansion, bonding defects such as peeling and cracking are unlikely to occur. Even if there is a slight difference in the coefficient of thermal expansion, internal stress is absorbed based on the plasticity of copper, which is a soft metal. In the first to eighth embodiments, the ceramic substrate on which the circuit pattern is formed is used as the power supply means. However, the thermal expansion coefficient of the generally available ceramic substrate is lower than that of the low-melting glass. Although the correlation is not necessarily large, a material having a weak intermolecular bond tends to have a low melting point and at the same time a characteristic having a high coefficient of thermal expansion. On the other hand, the light emitting device 1 can be realized even with a glass having a lower melting point having a coefficient of thermal expansion of 15 × 10 ⁻⁶ / ° C. or more by using a metal lead as power supply means. If a material having a large coefficient of thermal expansion is selected as the low-melting glass, the difference in coefficient of thermal expansion from the GaN-based LED element becomes large. Therefore, it is preferable to use a countermeasure against this difference.

(5) Since flip chip mounting is used, the electrode portion is less likely to be damaged.

(6) It has a structure in which cracks due to a difference in coefficient of thermal expansion between members hardly occur.

That is, a step having a shape corresponding to the AlN submount is formed on the lead, and stress relaxation is possible in the length direction of the AlN submount by the plasticity of the soft metal lead. In addition, glass is prone to cracks in tensile stress, but cracks are unlikely to occur in compressive stress. Since the GaN-based LED element having a low thermal expansion coefficient is configured to surround the center portion, the lead having a higher expansion coefficient than that, and the P ₂ O ₅ -F-based low melting point glass, each surface of the GaN-based LED element Stress acts in a direction perpendicular to the glass, and compressive stress is generated in the glass. Thus, the LED element and the submount can be realized even if the low-melting glass has a large thermal expansion coefficient.

(7) The heat generated by the GaN-based LED element is quickly radiated to the outside through the AlN submount and the lead. Moreover, since the thermal conductivity of glass is about 10 times better than that of the resin sealing material, heat radiation from the glass cannot be ignored.

(8) Also, hot pressing is performed on the lead frame, glass sealing is individually performed on the lead, and tie bar cutting is performed from the lead frame, which enables mass production in a lump and is excellent in mass productivity.

The material constituting the submount is not limited to AlN, and may be formed of sapphire (Al ₂ O ₃ ). When Al ₂ O ₃ is used, the difference in coefficient of thermal expansion from the glass material becomes small, so that generation of cracks and peeling can be suppressed.

  Further, as shown in FIG. 24, the GaN-based LED element 2 may be mounted on the Si submount 18 that functions as a Zener diode by the n layer 18B and the p layer 18C. In this case, the GaN-based LED element can be protected from electrostatic breakdown. Note that the wire 10 that electrically connects the p layer 18C of the Si submount 18 and the lead 19 is protected by the protective member such as the heat-resistant inorganic material coat 11 described above, thereby causing damage due to the glass sealing process. It can be avoided.

  Moreover, about the two glass which pinches | interposes a lead | read | reed, you may use a white thing for lower glass. In this case, the light emitted downward can be reflected and emitted to the optical shape forming side.

Further, the two glasses sandwiching the lead may have different viscosities. Specifically, P ₂ O ₅ -F low melting point glass (thermal expansion coefficient: 17.3 × 10 ⁻⁶ / ° C., yield point: 310 ° C., refractive index: 1.51, internal transmittance: 99 is used for the upper glass. % (470 nm)) and P ₂ O ₅ —F-based low melting glass (thermal expansion coefficient: 16.9 × 10 ⁻⁶ / ° C., yield point: 363 ° C., refractive index: 1.54) on the lower glass. , Internal transmittance: 99% (470 nm)). In this case, when hot pressing is performed, the upper side has a high viscosity and the lower side has a low viscosity, which facilitates molding.

25A and 25B show a light emitting device according to the tenth embodiment, in which FIG. 25A is a plan view, FIG. 25B is a sectional view taken along line AA, and FIG. 25C is a perspective view of a lower glass. The light-emitting device 1 electrically connects a face-up GaN-based LED element 2, a lead 19 having a lead cup portion 19 </ b> B on which the GaN-based LED element 2 is mounted, and the GaN-based LED element 2 and the lead 19. the wire 10, GaN-based LED element 2, a silicon coating 35 which covers and protects the wires 10, integrally sealing the lead 19 through the preformed upper glass 60A and lower glass 60B _P 2 _O 5 -F System glass sealing part 6.

  The lead cup portion 19B is formed in a mortar shape by the inclined surface 190 and the bottom surface 191, and is accommodated in the lead accommodating groove 60C of the lower glass 60B shown in FIG. The lead receiving groove 60C is formed when the lower glass 60B is preformed with a mold.

  Below, the manufacturing method of the light-emitting device 1 is demonstrated.

  First, a lead frame (not shown) provided with a pair of leads 19 made of copper and having a surface plated with silver is prepared. Next, the GaN-based LED element 2 is mounted on the lead cup portion 19 </ b> B of the lead 19. The GaN-based LED element 2 is bonded to the bottom surface 191 of the lead cup portion 19B with an inorganic transparent adhesive. Next, the pair of leads 19 and the electrodes of the GaN-based LED element 2 are electrically connected by wires 10. Next, the pair of leads 19 and the GaN-based LED element 2 are housed in the lead housing groove 60C of the preformed lower glass 60B in a state of being electrically connected. Next, the silicon resin coat 35 is potted so that the pair of leads 19 and the GaN-based LED element 2 are covered. Next, the upper glass 60A is prepared and integrated with the lower glass 60B based on hot pressing. Next, the light emitting device 1 is separated from the lead frame.

  According to the tenth embodiment described above, the following effects can be obtained.

  The silicon resin is heated at about 400 ° C. or higher, the molecular bond is broken by heat, and gas is generated. However, since the silicon resin coat 35 can be processed at 360 ° C. without thermally decomposing, Stress can be relieved by absorption with resin. Moreover, the glass sealing state of a pair of lead 19 is stabilized by using the preformed lower glass 60B which accommodates the lead cup part 19B. In addition, by performing hot press processing on the lead frame, individually sealing the glass on the lead, and cutting the tie bar from the lead frame, batch mass production becomes possible, and the mass productivity is excellent.

  FIG. 26 is a cross-sectional view showing a first modification of the light emitting device according to the tenth embodiment. The light-emitting device 1 includes a flip-chip GaN-based LED element 2 (0.3 mm × 0.3 mm), an AlN submount 18 on which the GaN-based LED element 2 is mounted, and a step portion 19A that accommodates the AlN submount 18. This embodiment is different from the tenth embodiment in that it has a pair of lead frames 19 each having.

  The pair of lead frames 19 has an inclined surface 19D above the stepped portion 19A, and the light emitted from the GaN-based LED element 2 is reflected by the inclined surface 19D and radiated outside.

  The AlN submount 18 has via holes 18A that electrically connect the circuit patterns 4 provided on the front surface and the back surface.

  Below, the manufacturing method of the light-emitting device 1 is demonstrated.

  First, a lead frame (not shown) provided with a pair of leads 19 is prepared. Next, the AlN submount 18 is electrically connected with Ag paste so as to be positioned on the step portion 19A of the lead 19. Next, the GaN-based LED element 2 is bonded to the AlN submount 18 via the Au stud bump 5. Next, the pair of leads 19 and the GaN-based LED element 2 are housed in the lead housing groove 60C of the preformed lower glass 60B in a state of being electrically connected. Next, the silicon coat 35 is potted so that the pair of leads 19 and the GaN-based LED element 2 are covered. Next, the upper glass 60A is prepared and integrated with the lower glass 60B based on hot pressing. Next, the light emitting device 1 is separated from the lead frame.

  According to the first modification described above, it is possible to efficiently extract light from the substrate side by using the flip-chip type GaN-based LED element 2.

  FIG. 27 is a cross-sectional view showing a second modification of the light emitting device according to the tenth embodiment. The light-emitting device 1 includes a pair of leads having a flip chip type GaN-based LED element (large size) 2, an AlN submount 18 on which the GaN-based LED element 2 is mounted, and a step portion 19 A that accommodates the AlN submount 18. It differs from the tenth embodiment in that it has a frame 19. The size of the large GaN-based LED element 2 is 1 mm × 1 mm.

In the second modified example, the configuration using the large-size chip has been described. However, the P ₂ O ₅ -F-based glass AlN submount 18 and the P ₂ O ₅ -F-based glass are increased by increasing the chip size. The difference in coefficient of thermal expansion of the sealing part 6 is large. Even in such a case, good sealing properties can be obtained.

FIG. 28 shows a light emitting device according to the eleventh embodiment, in which (a) is a side view and (b) is a perspective view for glass sealing. As shown in FIG. 28A, the light-emitting device 1 heats a cylindrical body 60D made of P ₂ O ₅ —F-based glass so that the GaN-based LED element 2, the wire 10, and the pair of leads 19 are made of glass. It is sealed.

  As shown in FIG. 28 (b), the cylindrical body 60D is composed of a cylindrical glass with a part cut away, and the glass 60 is melted by heating the cylindrical body 60D with a heating device such as a burner (not shown). Then, the GaN-based LED element 2, the wire 10, and the pair of leads 19 are glass-sealed.

  According to the eleventh embodiment described above, the GaN-based LED element 2, the wire 10, and the pair of leads 19 can be glass-sealed based on the surface tension of the molten glass. In this embodiment mode, glass is sealed by adhering molten glass, but hot pressing may be performed in a state where the glass is melted.

  FIG. 29 is a longitudinal sectional view showing a light emitting device according to the twelfth embodiment. The light emitting device 1 is obtained by providing a mold portion 9 made of an epoxy resin with respect to the light emitting device 1 described in the ninth embodiment.

  The mold part 9 has a hemispherical optical shape surface 9A and is formed by a transfer molding method.

  According to such a configuration, the optical system can be easily formed in the glass-sealed device, and the moisture resistance is further improved by the glass-sealed portion 6 being surrounded by the mold portion 9. In addition, since the lead lead portion is not directly from the glass, there is an effect of preventing the glass from being cracked or cracked due to stress at the time of lead bending. The mold part 9 may be formed of a resin material other than an epoxy resin, for example, a silicon resin, and a molding technique such as a potting mold method other than the transfer molding method may be applied. Further, it can be formed by an injection method using a resin material such as acrylic or polycarbonate. In this case, productivity can be improved.

  The embodiment shown in FIGS. 30 to 55 will be described in detail below.

(Optical element)
Optical elements include light emitting diodes, laser diodes and other light emitting elements and light receiving elements. The light receiving and emitting wavelength of the optical element is not particularly limited, and a group III nitride compound semiconductor element effective for ultraviolet to green light, a GaAs semiconductor element effective for red light, or the like can be used.

The problem of the sealing member is particularly noticeable in the group III nitride compound semiconductor light emitting device that emits a short wavelength. Here, the group III nitride compound semiconductor is represented by a general formula of Al _X Ga _Y In _1- XYN (0 <X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ X + Y ≦ 1). Among these, those containing Al include a so-called binary system of AlN, a so-called ternary system of Al _X Ga _1-X N and Al _X In _1-X N (where 0 <X <1).

  In the group III nitride compound semiconductor and GaN, at least part of the group III element may be substituted with boron (B), thallium (Tl), etc., and at least part of nitrogen (N) may be phosphorus (P ), Arsenic (As), antimony (Sb), bismuth (Bi) and the like.

  Further, the group III nitride compound semiconductor may contain an arbitrary dopant. As the n-type impurity, silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C), or the like can be used. As the p-type impurity, magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), or the like can be used. Although the group III nitride compound semiconductor can be exposed to electron beam irradiation, plasma irradiation or furnace heating after doping with p-type impurities, it is not essential.

  The group III nitride compound semiconductor layer is formed by MOCVD (metal organic chemical vapor deposition). It is not necessary to form all the semiconductor layers constituting the element by the MOCVD method, and the molecular beam crystal growth method (MBE method), halide vapor phase epitaxy method (HVPE method), sputtering method, ion plating method, etc. are used in combination. Is possible.

  As a structure of the light-emitting element, a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a pn junction can be used. A quantum well structure (single quantum well structure or multiple quantum well structure) can also be adopted as the light emitting layer. As such a group III nitride compound semiconductor light emitting element, a face-up type in which the main light receiving and emitting direction (electrode surface) is the optical axis direction of the optical device, and the reflected light with the main light receiving and emitting direction opposite to the optical axis direction. A flip chip type using the above can be used.

  The heat resistance temperature of the group III nitride compound semiconductor device is about 600 ° C., and the heat resistance temperature of the GaAs semiconductor device is about 600 ° C., both of which are stable with respect to the temperature when molding low-melting glass. is there.

(Power transmission means)
The optical device includes power receiving means. The power receiving means is an electrical component that supplies power to the light emitting element and extracts the power generated in the light receiving element upon receiving light. The lead for connecting the optical device to an external electrical line, the lead and the optical Bonding wires for wiring the elements are included. Bonding wires are often made of gold wires or gold alloy wires. The heat resistance temperature of bonding between the bonding wire itself and the bonding wire and the lead or the optical element is 600 ° C. or more, both of which are stable with respect to the temperature when the low melting point glass is molded.

(First sealing member)
The first sealing member covers at least a part of the optical element and the power receiving means. In the present invention, the first sealing member is SiO ₂ —Nb ₂ O ₅ type, B ₂ O ₃ —F type, P ₂ O ₅ —F type, P ₂ O ₅ —ZnO type, SiO ₂ —B ₂ O type. ₃ -La ₂ O ₃ system or selected glass of _SiO 2 _-B 2 _{O 3} -based.

  Any of these low melting glass can be press-molded at 350 to 600 ° C. The first sealing member of the present invention can also be formed by natural welding.

  A fluorescent material can also be dispersed in the first sealing member. As the fluorescent material, powder of an inorganic fluorescent material can be used and mixed with the low melting point glass. It is also possible to fluoresce the low melting point glass by doping rare earth ions. By appropriately combining the light emitting element and the fluorescent material, it is possible to obtain an arbitrary emission color including white light.

  In the combination of the first sealing member and the optical element, the Abbe number of the first sealing member is 40 or less, the refractive index is 1.6 or more, and the light receiving and emitting wavelength of the optical element is 546.1 nm ( The wavelength of Na e-line) or less is preferable. That is, it is advantageous that the external quantum efficiency of light emitted in the high refractive material is higher in the refractive index of the sealing material with respect to the wavelength of the emitted light. The refractive index of an optical material is defined by the d-line of Na. Generally, the shorter the wavelength, the higher the refractive index, and the degree of change of the refractive index with respect to the wavelength of light is indicated by the Abbe number. In particular, in light emitting devices with short wavelength emission, which is a problem with conventional resin sealing, light output is reduced due to yellowing of the resin by selecting a material having a high refractive index in the Na d-line and a large refractive index change with respect to the wavelength. In addition, it is possible to realize sealing with a material having a high refractive index for short-wavelength light, and to obtain a high external quantum efficiency.

Examples of the low melting point glass having such optical characteristics include SiO ₂ —Nb ₂ O ₅ based glass, and SiO ₂ —Nb ₂ O ₅ —Na ₂ O glass is particularly preferable.

  The first sealing member is preferably arranged at least in the light receiving / emitting direction in the light emitting element so as to cover it. This is for reliably preventing discoloration in the direction.

  The shape of the first sealing member is not particularly limited, and is appropriately designed according to the optical characteristics required for the optical device. In the case of a light emitting element, it is preferable that the first sealing member disposed in the light emission direction is a convex lens type.

(Second sealing member)
In this invention, the optical element may be sealed with a plurality of sealing members including the first sealing member described above. Here, the second sealing member covers the optical element from the direction opposite to the main light receiving and emitting direction.

Similarly to the first sealing member, the second sealing member is also composed of SiO ₂ —Nb ₂ O ₅ system, B ₂ O ₃ —F system, P ₂ O ₅ —F system, and P ₂ O ₅ —ZnO system. _{, SiO 2 -B 2 O 3 -La} 2 O 3 system, and may be a low melting glass selected from _SiO 2 _-B 2 _{O 3} based. Here, the second sealing member may be the same material as the first sealing member or may be a different material.

  When both are made of different low melting point glass materials, it is preferable that the refractive index of the first sealing member (existing in the main light receiving and emitting direction of the optical element) is higher than the refractive index of the second sealing member. . Thereby, when using a light emitting element as an optical element, the critical angle in the interface of a light emitting element and a sealing member becomes large, and a light efficiency will improve.

  In the case of the second sealing member made of low melting point glass, it can be formed by press molding or natural welding in the same manner as the first sealing member.

  In addition, a fluorescent material can be dispersed in the second sealing member made of low-melting glass, similarly to the first sealing member.

  It is also possible to form the second sealing member with a non-transparent material. Examples of the second sealing member include a metal plate, a ceramic plate and the like in addition to the low melting point glass. In this case, the second sealing member is preferably made of a material that reflects light efficiently. When the second sealing member is formed of a material other than the low-melting glass, the linear expansion coefficient of the first sealing member is set to the linear expansion coefficient of the second sealing member and the linear expansion of the optical element. Preferably between the coefficients. Thereby, even when the optical device is heat-treated in a solder reflow furnace or the like, it is possible to reduce the internal stress of the optical device based on the difference in the linear expansion coefficient of different materials.

  The present invention will be described below with reference to examples.

(First embodiment)
In this example, a face-up type III nitride compound semiconductor light emitting device 1010 shown in FIG. 30 was used as an optical element. This light emitting element emits blue light.

The specifications of each layer of the light emitting element 1010 are as follows.
Layer: Composition p-type layer 1015: p-GaN: Mg
Layer 1014 including light emitting layer: InGaN layer n-type layer 1013: n-GaN: Si
Buffer layer 1012: AlN
Substrate 1011: Sapphire

  An n-type layer 1013 made of GaN doped with Si as an n-type impurity is formed on the substrate 1011 via a buffer layer 1012. Here, sapphire is used for the substrate 1011, but the present invention is not limited to this. Sapphire, spinel, silicon carbide, zinc oxide, magnesium oxide, manganese oxide, zirconium boride, group III nitride compound semiconductor single crystal Etc. can be used. Further, the buffer layer is formed by MOCVD using AlN, but the present invention is not limited to this, and GaN, InN, AlGaN, InGaN, AlInGaN, etc. can be used as the material, and molecular beam crystal growth is used as the manufacturing method. A method (MBE method), a halide vapor phase epitaxy method (HVPE method), a sputtering method, an ion plating method, or the like can be used. When a group III nitride compound semiconductor is used as the substrate, the buffer layer can be omitted.

  Further, the substrate and the buffer layer can be removed as necessary after the semiconductor element is formed.

  Here, the n-type layer 1013 is formed of GaN, but AlGaN, InGaN, or AlInGaN can be used.

  The n-type layer 1013 is doped with Si as an n-type impurity, but Ge, Se, Te, C, or the like can also be used as an n-type impurity.

  The layer 1014 including the light-emitting layer may include a quantum well structure (multiple quantum well structure or single quantum well structure), and the light-emitting element has a single hetero type, a double hetero type, or a homojunction type. Things may be used.

  The layer 1014 including a light emitting layer may include a group III nitride compound semiconductor layer having a wide band gap doped with Mg or the like on the p-type layer 1015 side. This is for effectively preventing electrons injected into the layer 1014 including the light emitting layer from diffusing into the p-type layer 1015.

  A p-type layer 1015 made of GaN doped with Mg as a p-type impurity is formed on the layer 1014 including the light-emitting layer. The p-type layer 1015 can be AlGaN, InGaN, or InAlGaN, and Zn, Be, Ca, Sr, or Ba can be used as the p-type impurity. After introducing the p-type impurity, the resistance can be lowered by a known method such as electron beam irradiation, heating in a furnace, or plasma irradiation. In the light emitting device having the above-described configuration, each group III nitride compound semiconductor layer is formed by performing MOCVD under general conditions, a molecular beam crystal growth method (MBE method), a halide vapor phase epitaxy method (HVPE method). ), A sputtering method, an ion plating method, or the like.

  The n-electrode 1018 is composed of two layers of Al and V. After the p-type layer 1015 is formed, the p-type layer 1015, the layer 1014 including the light emitting layer, and a part of the n-type layer 1013 are removed by etching. It is formed by vapor deposition on the exposed n-type layer 1013.

  The translucent electrode 1016 is a thin film containing gold and is stacked on the p-type layer 1015. The p-electrode 1017 is also made of a material containing gold and is formed on the translucent electrode 1016 by vapor deposition. After forming each layer and each electrode by the above process, the separation process of each chip is performed.

  As shown in FIG. 31, the light emitting element 1010 has a light emitting element 1010 fixed on a mount lead 1021 as a power transmission means, and the mount lead 1021 and other power transmission means from the electrode on the upper surface of the light emitting element 1010. Bonding wires 1023 and 1024 are suspended from the sub-lead 1022, respectively. In order to reflect light from the light emitting element 1010 efficiently, the surface of the mount lead 1021 is silver-plated. Further, in order to ensure light reflection efficiency, the light emitting element 1010 can be fixed to the mount lead 1021 using an inorganic white adhesive. Furthermore, it is possible to use a copper alloy close to pure copper and have high heat dissipation. A gold wire is used as the bonding wire.

The assembly 1020 shown in FIG. 30 is set as a core in a pressing die 1025 as shown in FIG. A low melting point glass is set in each of the recesses 1026 and 1027 of the pressing mold 1025 and the mold 1025 is closed to form a sealing member 1028 (first sealing member) shown in FIG. . In this example, P ₂ O ₅ —F-based glass (Sumida Optical Glass Co., Ltd .: trade name K-PG325) was selected as the low-melting glass, and the molding temperature was 430 ° C.

  As a result, as shown in FIG. 33, all of the light emitting element 1010 and a part of the leads 1021 and 1022 are covered with a hemispherical sealing member 1028. The shape of the sealing member 1028 can be appropriately designed according to the optical characteristics required for the optical device 1002, and for example, a shell type can be adopted.

(Second embodiment)
An optical device 1003 shown in FIG. 34 is obtained by adding a fluorescent material in low-melting glass in the optical device 1001 shown in FIG. Note that the same elements as those in FIG. 33 are denoted by the same reference numerals and description thereof is omitted. In this embodiment, the sealing member 1038 is formed of low melting point glass doped with a rare earth element as a fluorescent material.

  By including an arbitrary fluorescent material in the low melting point glass, the emission color of the optical device 1003 can be controlled.

(Third embodiment)
An optical device 1004 shown in FIG. 35 is obtained by covering the sealing member 1028 with a shell-shaped cover 1048 in the optical device 1002 of FIG. The cover 1048 is made of an epoxy resin or other translucent resin and is molded. By providing the cover 1048 as described above, a large-sized optical device can be obtained. Thereby, a standard-shaped glass sealing body can be created, and various optical systems can be obtained from this by using a mold-type facility and a resin that is easier to work with. At this time, since the density of light emitted from the light emitting element is high and the vicinity of the light emitting element where the temperature rises is a glass material, light output deterioration can be suppressed to a negligible level. It is also possible to cover the sealing member 1038 shown in FIG. Further, the sealing members 1058, 1068, 1069, and 1079 shown in FIGS. 36, 38, and 39, which will be described later, can be covered with the cover 1048. The cover 1048 can contain a fluorescent material.

(Fourth embodiment)
An optical device 1005 shown in FIG. 36 has a sealing member 1058 formed by natural welding. The same elements as those in FIG. 33 are denoted by the same reference numerals, and the description thereof is omitted.

  The sealing member 1058 is formed as follows. As shown in FIG. 37, a cylindrical body 1058a made of low-melting glass is prepared, and this is put on the assembly 1020 of the light emitting element 1010 and the leads 1021, 1022. This is put in a furnace to soften the cylindrical body 1058a. As a result, the cylindrical body 1058a covers the assembly body 1020 in a lens shape by the surface tension of the material.

  According to this embodiment, since a pressing mold is not required, an inexpensive optical device can be provided.

(5th Example)
In the optical device 1006 shown in FIG. 38, the light emitting element 1010 and the leads 1021 and 1022 are covered with different types of low melting glass. In FIG. 38, the same elements as those in FIG. 33 are denoted by the same reference numerals, and the description thereof is omitted.

In the example of FIG. 38, the light emitting element is a blue light emitting element as in the above-described embodiment, and the upper side (main light emitting direction) of the light emitting element 1010 is the first sealing made of SiO ₂ —Nb ₂ O ₅ glass. A sealing member 6108 (refractive index 1.8, Abbe number 25) is sealed, and the lower side of the light emitting element 1010 (the direction opposite to the main light emission direction) is a second sealing made of P ₂ O ₅ —F-based glass. Sealed with a member 1069. From the viewpoint of improving the light extraction efficiency, the first sealing member 1068 selects a material having a high refractive index. Moreover, the manufacturing restrictions caused thereby can be relaxed by the second sealing member, and can be actually produced. As a result, the refractive index of the first sealing member 1068 is larger than the refractive index of the second sealing member 1069. In addition, the first sealing member 1068 is made of a material having a small Abbe number, and has an actual refractive index higher than that of a blue light-emitting element.

  The optical device 1006 shown in FIG. 38 can be formed by using different materials for filling the recesses 1026 and 1027 of the mold 1025 in FIG.

Note that when a red light emitting element is used, a material having a large refractive index can be selected as the first sealing member 1068 by selecting a material having a high refractive index and a large Abbe number. For example, there is SiO ₂ —B ₂ O ₃ —La ₂ O ₃ based glass having a refractive index of 1.8 and an Abbe number of 45.

(Sixth embodiment)
In the optical device 1007 shown in FIG. 39, a metal thin plate (Al thin plate) is used as the second sealing member 1079. The same elements as those in FIG. 38 are denoted by the same reference numerals, and the description thereof is omitted. By using a metal material as the second sealing member, light from the light-emitting element 1010 can be reflected efficiently. The second sealing member 1079 exclusively serves as a reflector, and a resin plate or the like can be used in addition to the metal thin plate.

  The optical device 1007 is manufactured as follows. As shown in FIG. 40, a thin metal plate 1079 is attached to the back side of the assembly 1020 of the light emitting element 1010 and the leads 1021, 1022. This is set in the mold 1025 as a core. At this time, the low melting point glass is filled only in the concave portion 1026 on the upper side of the press die 1025. Thereafter, the mold is clamped to obtain the optical device 1007 of FIG.

  When the first sealing member 1068 and the second sealing member 1079 are formed of different materials as in this embodiment, the value of the linear expansion coefficient of the first sealing member is set to the second sealing member. It is preferable that the linear expansion coefficient of the member and the linear expansion coefficient of the light emitting element be in the middle.

(Seventh embodiment)
In this embodiment, a flip chip type light emitting element 1100 is used. As shown in FIG. 41, the flip-chip type light-emitting element has a thick p-electrode 1101 laminated on the entire surface of the p-type layer 1015 instead of the translucent electrode 1016 and the p-electrode 1017 in the light-emitting element of FIG. It is a configuration. 30 identical to those in FIG. 30 are assigned the same codes as in FIG. 30, and descriptions thereof are omitted.

  The flip chip type light emitting element 1100 is mounted on the mount lead 1021 via the submount 1110, and the submount 1110 and the sublead 1022 are connected by a bonding wire 1124 to form an assembly 1120. A circuit pattern is formed on the submount 1110, and the electrodes 1018, 1101 of the light emitting element 1100 are electrically connected to the leads 1021, 1022 directly or via bonding wires 1124. Using this assembly 1120 as a core, a sealing member 1028 is formed in the same manner as in the first embodiment, and an optical device 1008 shown in FIG. 42 is obtained. As described above, in the light emitting device including the flip chip type light emitting element, only one bonding wire is delicate in the sealing process, so that the process management becomes easy and the manufacturing yield is improved. Further, since the bonding wire is not close to the light emitting surface of the light emitting element, the bonding wire does not affect the external radiation efficiency.

  In addition, the same code | symbol is attached | subjected to the element same as 1st Example, and description is simplified.

  The sealing members described in the second to sixth embodiments can be applied to the assembly 1120 of the flip-chip type light emitting element 1100 shown in FIG. Examples thereof are shown in FIGS. In order to simplify the description, the same elements as those described above are denoted by the same reference numerals, and the description thereof is omitted.

(Eighth embodiment)
In this embodiment, as shown in FIG. 47, circuit patterns 1201 and 1202 as power transmitting means are formed on the surface of an inorganic material substrate 1200 made of AlN or the like. A flip chip type light emitting element 1100 is mounted on the circuit patterns 1201 and 1202 via bumps 1205 and 1206. The substrate 1200 is mounted on the leads 1021 and 1022 using a eutectic material. Then, using this assembly 1220 as a core, a sealing member 1028 is formed in the same manner as in the first embodiment, and an optical device 1009 shown in FIG. 48 is obtained.

  In addition, the same code | symbol is attached | subjected to the element same as 1st Example, and description is simplified.

  The sealing member described in the second to sixth embodiments can be applied to the assembly 1220 shown in FIG. Examples thereof are shown in FIGS. 49 to 51. In order to simplify the description, the same elements as those described above are denoted by the same reference numerals, and the description thereof is omitted.

  In the above example, the entire assembly 1220 is covered with the sealing member. However, a part of the light emitting element 1100 and the circuit patterns 1201 and 1202 may be covered with the sealing member 1228 as shown in FIG. The optical device having the configuration shown in FIG. 53 can be used as a chip LED.

  The optical device of this embodiment has no thermally and mechanically fragile bonding wires, and does not contain an organic material in the device, so that a low-melting glass can be pressed at a high temperature. . Moreover, it becomes stable against heat treatment in a reflow furnace or the like. Therefore, manufacture becomes easy and the range of selection of the low melting glass applicable is also expanded. Accordingly, it is possible to provide an inexpensive optical device.

  Not only the above eutectic material, but optical element mounting by gold bumps may be performed. This also enables stable device formation using only wireless and inorganic materials.

(Ninth embodiment)
FIG. 54 is a sectional view of the optical device of this embodiment, and FIG. 55 is a plan view thereof.

  The optical device 1230 includes a flip chip type light emitting element 1100, an AlN substrate 1231, a metal pattern 1236, and a sealing member 1238.

Although the substrate 1231 is made of AlN in this embodiment, at least the mounting surface of the light emitting element 1100 only needs to be formed of an insulating material such as AlN. For example, the base portion of the substrate formed of an aluminum plate and AlN laminated on the surface can be used as the substrate. As the insulating material, Al ₂ O ₃ or the like can be used in addition to AlN.

  Through holes 1231 and 1232 are formed in the substrate 1231.

Almost the entire mounting surface of the substrate 1231 is covered with the metal patterns 1235 and 1236. In this embodiment, metal patterns 1235 and 1236 are formed by a metallization method. For this reason, the bonding force between the metal patterns 1235 and 1236 and the substrate 1231 is strong, and the bonding force between both is improved by increasing the contact area with the substrate 1231. The metal patterns 1235 and 1236 of the example are formed by plating nickel on tungsten, and the light emitting element mounting portion and the metal pattern exposed portion (location where the low melting point glass is not sealed) are further plated with gold. Such a metal material has a strong bonding force with a sealing member made of an insulating material and a low melting point glass on the substrate mounting surface. In addition, the glass and the metal material have substantially the same linear thermal expansion coefficient (approximately 10 to 20 × 10 ⁻⁶ (1 / ° C.)), and stress due to thermal shrinkage hardly occurs. Note that the shape and forming material of the metal pattern are appropriately selected according to the material of the substrate mounting surface and the material of the sealing member.

  The metal patterns 1235 and 1236 serve as power transmission means for the light emitting element 1100. In addition, a metal pattern can be formed as a separate body from the power receiving means, and the bonding force between the substrate and the sealing member can be ensured.

  Eutectic material plating is applied to the electrode surface (the lower side surface in the drawing) of the light emitting element 1100 of the flip chip type. Then, the light emitting element 1100 is soldered to the metal patterns 1235 and 1236 through a general-purpose reflow furnace.

  Here, since the eutectic material plating is widely and thinly formed on the electrode surface of the light emitting element 1100, the heat dissipation to the substrate side is excellent. Further, even if the distance between the p-electrode and the n-electrode is narrow as in a flip-chip type light emitting element, there is no short circuit.

The sealing member 1238 is made of low-melting glass that is transparent with respect to the wavelength of the light-emitting element 1100. As such low melting point glass, SiO ₂ —Nb ₂ O ₅ system, B ₂ O ₃ —F system, P ₂ O ₅ —F system, P ₂ O ₅ —ZnO system, SiO ₂ —B ₂ O ₃ —La ₂ O ₃ A low melting point glass selected from the system and SiO ₂ —B ₂ O ₃ system can be employed.

  The sealing member 1238 is molded in a nitrogen atmosphere under reduced pressure.

  According to such an optical device 1230, the adhesion between the low melting point glass forming the sealing member 1238 and the metal forming the metal patterns 1235 and 1236 is high, and the adhesion between the metal and the AlN substrate 1231 is also high. Sex is secured. For this reason, the sealing member 1238 is firmly bonded to the substrate 1231, and interface peeling hardly occurs. Further, in this optical device, there is no thermally or mechanically fragile bonding wire, and since no organic material is contained in the device, the low-melting glass can be press-molded at a higher temperature. Moreover, it becomes stable against heat treatment in a reflow furnace or the like. Therefore, manufacture becomes easy and the range of selection of the low melting glass applicable is also expanded.

  Hereinafter, the embodiment shown in FIGS. 56 to 64 will be described in detail.

(Optical element)
Optical elements include light emitting diodes, laser diodes and other light emitting elements and light receiving elements. The light receiving and emitting wavelength of the optical element is not particularly limited, and a group III nitride compound semiconductor element effective for ultraviolet to green light, a GaAs semiconductor element effective for red light, or the like can be used. In addition, an optical element formed of SiC, AlInGaP, or the like can be used.

The problem of the sealing member is particularly noticeable in the group III nitride compound semiconductor light emitting device that emits a short wavelength. Here, the group III nitride compound semiconductor is represented by a general formula of Al _X Ga _Y In _1- XYN (0 <X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ X + Y ≦ 1). Among these, those containing Al include a so-called binary system of AlN, a so-called ternary system of Al _X Ga _1-X N and Al _X In _1-X N (where 0 <X <1). In the group III nitride compound semiconductor and GaN, at least part of the group III element may be substituted with boron (B), thallium (Tl), etc., and at least part of nitrogen (N) may be phosphorus (P ), Arsenic (As), antimony (Sb), bismuth (Bi) and the like.

  Further, the group III nitride compound semiconductor may contain an arbitrary dopant. As the n-type impurity, silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C), or the like can be used. As the p-type impurity, magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), or the like can be used. Although the group III nitride compound semiconductor can be exposed to electron beam irradiation, plasma irradiation or furnace heating after doping with p-type impurities, it is not essential.

  The group III nitride compound semiconductor layer is formed by MOCVD (metal organic chemical vapor deposition). It is not necessary to form all the semiconductor layers constituting the element by the MOCVD method, and the molecular beam crystal growth method (MBE method), halide vapor phase epitaxy method (HVPE method), sputtering method, ion plating method, etc. are used in combination. Is possible.

  As a structure of the light-emitting element, a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a pn junction can be used. A quantum well structure (single quantum well structure or multiple quantum well structure) can also be adopted as the light emitting layer. As such a group III nitride compound semiconductor light emitting element, a face-up type in which the main light receiving and emitting direction (electrode surface) is the optical axis direction of the optical device, and the reflected light with the main light receiving and emitting direction opposite to the optical axis direction. A flip chip type using the above can be used.

  The epi-growth temperature of the group III nitride compound semiconductor device is about 1050 ° C., and the epi-growth temperature of the GaAs-based semiconductor device has a heat-resistant temperature of 600 ° C. or higher. Processing without damage influence is possible.

(Inorganic material substrate)
In the optical device of the present invention, the above-described optical element is mounted on an inorganic material substrate. The base material and shape of the inorganic material substrate can be appropriately selected according to the use of the optical device. For example, a rectangular plate such as AlN, Al ₂ O ₃ , glass-containing Al ₂ O _3, or the like is used. it can.

  It is only necessary that at least the surface of the substrate is formed of the base material. For example, a substrate in which the central portion is formed of Al or an Al alloy and the surface is surrounded by AlN can be used.

(Metal pattern)
A metal pattern is formed on the inorganic material substrate, and each electrode of the optical element and an external circuit are electrically coupled to receive power from the optical element. That is, when the optical element is a light emitting element, electric power is applied from the external circuit to the optical element, and when the optical element is a light receiving element, the electric power generated by the optical element is taken out to the external circuit.

  In addition to the power transmission / reception function, the metal pattern of the present invention also has the function of an adhesive layer that stably adheres the inorganic sealing member to the inorganic material substrate. Since the sealing member is arranged so as to surround the optical element, by forming the metal pattern in the area so as to surround the optical element, the metal pattern interposed between the sealing member and the inorganic material substrate is formed. The area can be maximized. The metal pattern surrounding the optical element is not limited to a continuous body, and may be a non-continuous body. It is not necessary for all parts of such a discontinuous metal pattern to assume the power receiving function.

Since the metal pattern also has a function of reflecting light, by surrounding the optical element with this, the metal pattern also has a function of improving the light extraction efficiency by reflecting all the light of the optical element. For example, a substrate made of black AlN absorbs light from the optical element, and a substrate made of Al ₂ O ₃ transmits light from the optical element, so that the metal element surrounds the optical element. Thus, the light from the optical element can be efficiently reflected to the outside.

  The material for forming the metal pattern is appropriately selected according to the material of the sealing member and the material of the inorganic material substrate, which has excellent binding properties with them. The metal pattern can be a multilayer structure. For example, W, W \ Ni (Ni laminated on Ni), W \ Ni \ Ag (Ni and Ag sequentially laminated on W), Cu foil, etc. are used as the metal pattern forming material. can do.

  Here, the W layer enters the sealing member and the inorganic material of the substrate like a wedge by heating, and a strong bond is formed between them. When the Ni layer is formed on the W layer, a chemical bond is generated between the Ni layer and the sealing member by heating, and a strong bond is obtained between the two.

  The Ag layer is a high reflectivity layer that improves the light reflection efficiency of the metal pattern, and is preferably formed partially on the periphery of the optical element. Also, an Au layer can be formed as a coupling means on the portion where the optical element is mounted. With this Au layer, the optical element can be bonded to the metal pattern.

  Au bumps can be used as the coupling means. Further, in addition to the Au bump, a mount coupling means using a eutectic material such as a solder bump or solder plating may be used.

  From the viewpoint of reducing the amount of thermal deformation of the substrate, it is preferable to form the metal pattern on the substantially entire surface of the optical element mounting surface (surface) of the substrate.

  When the metal pattern is formed up to the back surface of the substrate, the substrate surface, the pattern, and the pattern on the back surface of the substrate can be connected by forming a through hole (via hole) in the substrate and passing the metal pattern material therethrough. Since the electrical terminal is drawn from the surface on which the optical element of the substrate is mounted to the back surface side, the surface of the substrate on which the optical element is mounted is not covered with the optical element sealing member for the electrical terminal. There is no need to provide a location, and the entire surface can be sealed with a plate-shaped sealing member. For this reason, it can be excellent in mass productivity. At this time, if the substrate does not have a through hole, the sealing member of the optical element on the surface side on which the optical element is mounted does not come out to the back surface side.

  The method for forming the metal pattern is not particularly limited, but in the examples, W paste was screen-printed on the inorganic material substrate, and this was fired to form a W metal pattern on the inorganic material substrate. The Ni layer is plated on the W layer to form a metal pattern made of W \ Ni, and heat treatment is performed. W \ Ni \ Ag deposits more Ag on the plated Ni layer.

  These metal layers can also be formed by sputtering or other known methods.

(Sealing member)
The inorganic sealing member is not particularly limited as long as it is transparent to the light receiving and emitting wavelength of the optical element and can protect the optical element, but considering that the heat resistant temperature of the optical element is about 600 ° C., It is preferable to employ a low-melting glass having a lower melting point (softening point).

As such low melting point glass, in addition to lead glass and chalcogenide glass, SiO ₂ —Nb ₂ O ₅ system, B ₂ O ₃ —F system, P ₂ O ₅ —F system, P ₂ O ₅ —ZnO system, SiO ₂ -B ₂ O ₃ -La ₂ O ₃ system or may be employed glass _SiO 2 _-B 2 _{O 3} -based. Any of these low melting glass can be press-molded at 350 to 600 ° C.

  A fluorescent material can also be dispersed in the sealing member. As the fluorescent material, powder of an inorganic fluorescent material can be used and mixed with the low melting point glass. It is also possible to fluoresce the low melting point glass by doping rare earth ions. By appropriately combining the light emitting element and the fluorescent material, it is possible to obtain an arbitrary emission color including white light.

  In this combination of the sealing member and the optical element, the Abbe number of the sealing member is 40 or less, the refractive index is 1.6 or more, and the light receiving and emitting wavelength of the optical element is 546.1 nm (the wavelength of Na e-line) ) The following is preferable. That is, it is advantageous that the external quantum efficiency of light emitted in the high refractive material is higher in the refractive index of the sealing material with respect to the wavelength of the emitted light. The refractive index of an optical material is defined by the d-line of Na. Generally, the shorter the wavelength, the higher the refractive index. In particular, in light emitting devices with short wavelength emission, which is a problem with conventional resin sealing, light output is reduced due to yellowing of the resin by selecting a material having a high refractive index in the Na d-line and a large refractive index change with respect to the wavelength. In addition, it is possible to realize sealing with a material having a high refractive index for short-wavelength light, and to obtain a high external quantum efficiency.

Examples of the low melting point glass having such optical characteristics include SiO ₂ —Nb ₂ O ₅ based glass, and SiO ₂ —Nb ₂ O ₅ —Na ₂ O glass is particularly preferable.

  The light emitting element can be surrounded by the sealing member by superimposing a sealing member made of plate-shaped low melting point glass on the optical element and heating it so as to be softened. This heating is preferably performed in a reduced-pressure atmosphere so that air does not enter between the sealing member and the optical element. By this heating, a chemical reaction occurs at the interface between the low melting point glass and the metal pattern, and the two are firmly bonded.

  The present invention will be described below with reference to examples.

(Tenth embodiment)
In this example, a flip chip type group III nitride compound semiconductor light emitting element 2010 shown in FIG. 56 was used as an optical element. This light emitting element emits blue light.

The specifications of each layer of the light emitting element 2010 are as follows.
Layer: Composition p-type layer 2015: p-GaN: Mg
Layer 2014 including light emitting layer: InGaN layer including n-type layer 2013: n-GaN: Si
Buffer layer 2012: AlN
Substrate 2011: Sapphire

  An n-type layer 2013 made of GaN doped with Si as an n-type impurity is formed on the substrate 2011 through the buffer layer 12. Here, although sapphire is used for the substrate 2011, the present invention is not limited to this. Sapphire, spinel, silicon carbide, zinc oxide, magnesium oxide, manganese oxide, zirconium boride, a group III nitride compound semiconductor single crystal Etc. can be used. Further, the buffer layer is formed by MOCVD using AlN, but the present invention is not limited to this, and GaN, InN, AlGaN, InGaN, AlInGaN, etc. can be used as the material, and molecular beam crystal growth is used as the manufacturing method. A method (MBE method), a halide vapor phase epitaxy method (HVPE method), a sputtering method, an ion plating method, or the like can be used. When a group III nitride compound semiconductor is used as the substrate, the buffer layer can be omitted.

  Further, the substrate and the buffer layer can be removed as necessary after the semiconductor element is formed.

  Here, the n-type layer 2013 is formed of GaN, but AlGaN, InGaN, or AlInGaN can be used.

  The n-type layer 2013 is doped with Si as an n-type impurity, but Ge, Se, Te, C, or the like can also be used as an n-type impurity.

  The layer 2014 including a light emitting layer may include a quantum well structure (multiple quantum well structure or single quantum well structure), and the light emitting element has a single hetero type, a double hetero type, and a homojunction type. Things may be used.

  The layer 2014 including a light emitting layer may include a group III nitride compound semiconductor layer having a wide band gap doped with Mg or the like on the p-type layer 2015 side. This is for effectively preventing electrons injected into the layer 2014 including the light emitting layer from diffusing into the p-type layer 2015.

  A p-type layer 2015 made of GaN doped with Mg as a p-type impurity is formed on the layer 2014 including the light emitting layer. The p-type layer 2015 may be AlGaN, InGaN, or InAlGaN, and Zn, Be, Ca, Sr, or Ba may be used as the p-type impurity. After introducing the p-type impurity, the resistance can be lowered by a known method such as electron beam irradiation, heating in a furnace, or plasma irradiation.

  In the light emitting device having the above-described configuration, each group III nitride compound semiconductor layer is formed by performing MOCVD under general conditions, a molecular beam crystal growth method (MBE method), a halide vapor phase epitaxy method (HVPE method). ), A sputtering method, an ion plating method, or the like.

  The n-electrode 2018 is composed of two layers of Al and V. After the p-type layer 2015 is formed, the p-type layer 2015, the layer 2014 including the light emitting layer 2014, and a part of the n-type layer 2013 are removed by etching. It is formed by vapor deposition on the exposed n-type layer 2013.

  The p electrode 2016 is laminated on the p-type layer 2015 by vapor deposition. After forming each layer and each electrode by the above process, the separation process of each chip is performed.

  Next, an inorganic material substrate for mounting the light emitting element 2010 is prepared.

  A paste containing W is screen-printed on both surfaces of the inorganic material substrate 2021 made of AlN before firing to obtain patterns 2023 and 2024 shown in FIG. As shown in FIG. 57B, a through hole 2025 is formed in the substrate 2021, and the mount surface (front surface) pattern 2023 and the back surface pattern 2024 are electrically coupled through the through hole 2025.

  Thereafter, AlN is sintered at a temperature exceeding 1500 ° C. and paste W is baked onto the substrate 2021. Thereby, W and a board | substrate are couple | bonded firmly. It is also possible to form this W by sputtering. Further, instead of W, a refractory metal such as Mo may be used.

  Next, the Ni layer 2026 is heated at about 700 ° C. by the plating method on the W pattern 2023 on the surface side of the substrate 2021 to react Ni and W. As a result, the metal pattern is firmly bonded on the AlN substrate 2021.

  Next, as shown in FIG. 58, the light emitting element 2010 is mounted at a predetermined position by gold bumps 2027 and 2028. Note that the bump 2027 is connected to the n-electrode 2018 of the light-emitting element 2010, and the bump 2028 is connected to the p-electrode 2016 of the light-emitting element 2010. In the state of FIG. 58A, the light emitting element 2010 is surrounded by the metal pattern 2023.

  Next, as illustrated in FIG. 59, a plate-shaped low melting glass serving as a sealing member is stacked on the surface side of the substrate 2021, and this is heated and fused in a reduced pressure atmosphere to seal the light emitting element 2010. As a result, Ni on the surface of the metal pattern and the low melting point glass 2029 are chemically bonded and firmly bonded via the oxide on the surface of Ni. Moreover, residual bubble generation at the time of sealing can be prevented.

  Further, by adopting a flip chip type as the light emitting element 2010, a bonding wire is omitted, and this point is also mechanically stable. Therefore, it can be said that the optical device having such a configuration is suitable for a mass production process.

  Finally, the substrate 2021 is divided along the dividing line D to obtain the optical device of the embodiment.

(Eleventh embodiment)
60 to 63 show optical devices of other embodiments.

  FIG. 60 is a plan view of this optical device. In this optical device, the pattern on the substrate surface (mounting surface) side is divided into a first portion (annular portion) 2103 and a second portion (coupling portion) 2104 and 2105. A plurality of holes 2107 are formed in the first portion 2103. The first portion 2103 is formed with a conductive portion 2108 that extends to the periphery of the substrate. The conductive portion 2108 is used for applying an electric field during plating.

  The first portion 2103 is a laminated body of a W layer and an Ni layer formed in the same manner as in the tenth embodiment, and an inorganic sealing member is pasted thereon to form a substrate 2110-first portion. 2103-A strong bond is obtained between the sealing members 2140. The second parts 2104 and 2105 made of Cu formed by plating penetrate the first substrate 2111.

The substrate 2110 of this embodiment is made of Al ₂ O ₃ as a base material, and a first substrate 2111 and a second substrate 2112 are bonded together. AlN, glass-containing Al ₂ O _{3 and} other inorganic materials can be used as the base material of each substrate, and the base material of the first substrate 2111 and that of the second substrate 2112 can be different. .

  A through hole 2107 is formed in the base material of the first substrate 2111, and the metal layer of the first portion 2103 which is a metal pattern is laminated on the peripheral surface of the hole 2107.

  Metal patterns 2120, 2121, and 212 shown in FIG. 62 are formed on the surface of the second substrate 2112. An annular metal pattern 2120 having a notch faces the hole 2107 of the first substrate 111. Similar to the first portion 2103 of the first metal pattern, the metal pattern 2120 is formed of a laminate of a W layer and an Ni layer. According to the metal pattern 2120 configured as described above, a sufficient bonding force can be obtained between the sealing member and the inorganic material (low melting point glass or the like) that has entered the bottom of the hole 2107.

  The metal patterns 2121 and 2122 formed in the center of the second substrate 2112 are formed at positions facing the second portions 2104 and 2105 of the metal patterns of the first substrate 2111, respectively. When the first substrate 2111 and the second substrate 2112 are bonded to each other, the metal patterns 2121 and 2122 are electrically coupled to the second portions 2104 and 2105, respectively. The metal patterns 2121 and 2122 were obtained by further laminating an Au layer on a laminate of a W layer and an Ni layer. By providing the Au layer, the connectivity between the metal patterns 2121 and 2122 and the second portions 2104 and 2105 is improved.

  Through holes 2125 and 2126 are formed in the second substrate 2112. Wide patterns of metal patterns 2131 and 2132 are formed on the back surface of the second substrate 2112. The metal pattern 2121 on the front surface side of the second substrate 2112 is electrically coupled to the metal pattern 2131 on the back surface side through a conductive metal material filled in the through hole 2125. Accordingly, power is transmitted and received from the metal pattern 2131 to one electrode of the element 2010 through the metal pattern 2104 on the surface of the first substrate 2111. Similarly, the metal pattern 2122 on the front surface side of the second substrate 2112 is electrically coupled to the metal pattern 2132 on the back surface side through a conductive metal material filled in the through hole 2126. Thus, power is transmitted and received from the metal pattern 2132 to the other electrode of the element 2010 through the metal pattern 2105 on the surface of the first substrate 2111.

  Conductive portions 2135 and 2136 are formed on the metal patterns 2131 and 2132 formed on the back surface of the second substrate 2112, respectively. The conductive portions 2135 and 2136 are used when the metal patterns 2131 and 2132 are formed by plating.

  The metal patterns 2131 and 2132 on the back surface of the second substrate 2112 were obtained by further laminating an Au layer on the laminated body of the W layer and the Ni layer. By providing the Au layer, the connectivity between the metal patterns 2131 and 2132 and the external electrode is improved. The metal material in the through holes 2125 and 2126 is formed when the metal patterns 2131 and 2132 and the metal patterns 2121 and 2122 on the surface side are formed.

  In this embodiment, an inorganic material substrate 2110 is formed by preparing a first substrate 2111 and a second substrate 2112 separately and bonding them. The method for bonding the first substrate 2111 and the second substrate 2112 is not particularly limited, and an adhesive can also be used.

  By dividing the substrate 2110, a metal pattern can be formed on the dividing surface, and the degree of freedom in circuit design is improved. Further, if the hole 2107 penetrates the substrate 2110, depending on the material of the sealing member, the hole 2107 may adhere to the lower mold that supports the substrate 2110, and the mold separation may be deteriorated. When the hole 2107 is bottomed as in this embodiment, contact between the material of the sealing member and the lower mold can be prevented. Further, if the hole 2107 penetrates, it is difficult to apply a negative pressure for extracting air between the sealing member and the substrate surface to the entire surface of the substrate. On the other hand, if the hole 2107 has a bottom, even if air between the sealing member and the substrate remains, the air escapes into the hole, so that bubbles are generated between the sealing member and the substrate. Can be prevented. The formation of the bottomed hole 2107 by closing one opening portion of the through hole formed in the first substrate 2111 with the second substrate 2112 can be achieved by forming a bottom plate on a single plate-like substrate. Compared to drilling holes, it is excellent in mass productivity.

  A sealing member 2140 made of an inorganic translucent material is coated on the surface of the substrate 2110. In this embodiment, the material of the sealing member 2140 is firmly bonded to the metal pattern 2103 on the surface of the substrate 2110. In this embodiment, the material of the sealing member 2140 goes around into the hole 2107, and the material of the sealing member 2140 The substrate 2110 is physically engaged. Thereby, even if there is a large difference in thermal expansion coefficient between the sealing member 2140 and the substrate 2110, the deformation of both is physically suppressed, and the sealing member 2140 is more reliably peeled off from the substrate 2110. Is prevented.

  As described above, the unevenness is provided on the substrate surface to be covered with the sealing member, so that the sealing member and the substrate are physically engaged with each other, so that the sealing member can be more reliably prevented from being peeled off from the substrate. . As the unevenness, in addition to the bottomed hole of the embodiment, a groove or a through hole can be used. Further, by making the substrate surface rough (Ra = 0.5 μm or more), physical engagement between the two can be obtained. If the surface of the base material is roughened on the substrate, even if a metal pattern is formed thereon, the roughness is reflected on the surface of the metal pattern. Further, by providing holes only in the metal pattern 2103, that is, by forming the metal pattern 2103 in a lattice shape, for example, the unevenness can be formed.

  The effect of the unevenness is effective even when the sealing member made of an inorganic translucent material is directly coated on the base material of the inorganic material substrate without any metal pattern.

  The example of FIG. 64 shows an example in which a bottomed hole 2257 is formed in the substrate of the optical element of the tenth embodiment. As shown in FIGS. 64 and 60, it is preferable that the holes or irregularities are evenly distributed on the substrate surface. This is for securing the engagement between the sealing material and the projections and depressions on the entire surface of the substrate and preventing the both from peeling off.

  Hereinafter, the embodiment illustrated in FIGS. 65 to 74 will be described in detail.

(Optical element)
Optical elements include light emitting diodes, laser diodes and other light emitting elements and light receiving elements. The light receiving and emitting wavelength of the optical element is not particularly limited, and a group III nitride compound semiconductor element effective for ultraviolet to green light, a GaAs semiconductor element effective for red light, or the like can be used. In addition, an optical element formed of SiC, AlInGaP, or the like can be used.

The problem of the sealing member is particularly noticeable in the group III nitride compound semiconductor light emitting device that emits a short wavelength. Here, the group III nitride compound semiconductor is represented by a general formula of Al _X Ga _Y In _1- XYN (0 <X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ X + Y ≦ 1). Among these, those containing Al include a so-called binary system of AlN, a so-called ternary system of Al _X Ga _1-X N and Al _X In _1-X N (where 0 <X <1). In the group III nitride compound semiconductor and GaN, at least part of the group III element may be substituted with boron (B), thallium (Tl), etc., and at least part of nitrogen (N) may be phosphorus (P ), Arsenic (As), antimony (Sb), bismuth (Bi) and the like.

  Further, the group III nitride compound semiconductor may contain an arbitrary dopant. As the n-type impurity, silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C), or the like can be used. As the p-type impurity, magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), or the like can be used. Although the group III nitride compound semiconductor can be exposed to electron beam irradiation, plasma irradiation or furnace heating after doping with p-type impurities, it is not essential.

  The group III nitride compound semiconductor layer is formed by MOCVD (metal organic chemical vapor deposition). It is not necessary to form all the semiconductor layers constituting the element by the MOCVD method, and the molecular beam crystal growth method (MBE method), halide vapor phase epitaxy method (HVPE method), sputtering method, ion plating method, etc. are used in combination. Is possible.

  As a structure of the light-emitting element, a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a pn junction can be used. A quantum well structure (single quantum well structure or multiple quantum well structure) can also be adopted as the light emitting layer. As such a group III nitride compound semiconductor light emitting element, a face-up type in which the main light receiving and emitting direction (electrode surface) is the optical axis direction of the optical device, and the reflected light with the main light receiving and emitting direction opposite to the optical axis direction. A flip chip type using the above can be used.

  The epi-growth temperature of the group III nitride compound semiconductor device is about 1050 ° C., and the epi-growth temperature of the GaAs-based semiconductor device has a heat-resistant temperature of 600 ° C. or higher. Processing without damage influence is possible.

(Inorganic material substrate)
In the optical device of the present invention, the above-described optical element is mounted on an inorganic material substrate. The base material and shape of the inorganic material substrate can be appropriately selected according to the use of the optical device. For example, a rectangular plate such as AlN, Al ₂ O ₃ , glass-containing Al ₂ O _3, or the like is used. it can.

  It is only necessary that at least the surface of the substrate is formed of the base material. For example, a substrate in which the central portion is formed of Al or an Al alloy and the surface is surrounded by AlN can be used.

(Metal pattern)
A first metal pattern and a second metal pattern are formed on the inorganic material substrate.

  The first metal pattern electrically couples each electrode of the optical element and an external circuit to transmit power to the optical element. That is, when the optical element is a light emitting element, electric power is applied from the external circuit to the optical element, and when the optical element is a light receiving element, the electric power generated by the optical element is taken out to the external circuit.

  The second metal pattern has a function of an adhesive layer that stably adheres the inorganic sealing member to the inorganic material substrate. Since the sealing member is arranged so as to surround the optical element, the second metal pattern is also arranged so as to surround the first metal pattern for mounting the optical element, so that the sealing member, the inorganic material substrate, The area of the second metal pattern interposed between the two can be maximized. Note that the second metal pattern is not limited to a continuous body, and may be a non-continuous body.

  The first metal pattern and the second metal pattern may be continuous. However, as long as the first metal pattern and the second metal pattern are insulated, each function can be obtained by applying an electric field independently. It is possible to perform electroplating on the most suitable material.

Since the metal layer also has a function of reflecting light, by surrounding the optical element with the first metal pattern and the second metal pattern, it also has a function of improving the light extraction efficiency by reflecting the light of the optical element without omission. For example, a substrate made of black AlN absorbs light from the optical element, and a substrate made of Al ₂ O ₃ transmits light from the optical element, so that the metal element surrounds the optical element. Thus, the light from the optical element can be efficiently reflected to the outside.

  In order to improve the light reflection efficiency, the surface of the first metal pattern formed closer to the optical element is preferably a highly reflective metal layer such as Ag.

  The material for forming the first metal pattern needs to have a surface layer that is compatible with the bonding material for bonding the optical element. For example, when an Au bump is used as the bonding material, the surface layer of the first metal pattern is formed of Au or Ag. The layers other than the surface layer are preferably formed of the same material as the second metal pattern from the viewpoint of improving productivity.

  In addition to the Au bumps described above, eutectic materials such as solder bumps and solder plating can be used as a bonding material for bonding the optical element and the substrate.

  Since the Ag layer has a high light reflectance, it is preferable that the Ag layer is partially formed on the peripheral portion of the optical element in the first metal pattern.

As a material for forming the second metal pattern, a material excellent in binding property with the material of the sealing member and the material of the inorganic material substrate is appropriately selected. The metal pattern can be a multilayer structure. For example, W, W \ Ni (a laminate of Ni on W), W \ Ni \ Ag (a laminate of Ni and Ag on W), Cu foil (glass) The contained Al ₂ O ₃ substrate can obtain adhesive strength through an oxide, and the substrate has a thermal expansion coefficient close to that of an inorganic sealing member such as 13 × 10 ⁻⁶ (1 / ° C.). .) Etc. can be employed.

  Here, the W layer enters the sealing member and the inorganic material of the substrate like a wedge by heating, and a strong bond is formed between them. When the Ni layer is formed on the W layer, a chemical bond is generated between the Ni layer and the sealing member by heating, and a strong bond is obtained between the two.

  The surface of the second metal pattern is preferably made of a soft sealing member and a material with good wettability. Examples of such a material include at least one of Ni, Cr, Ti, Cu, and alloys thereof.

  The second metal pattern for joining the substrate surface and the sealing member is preferably formed as large as possible on the substrate surface.

  A second metal pattern that should occupy a large area on the substrate surface by a material having a thermal expansion coefficient intermediate between the thermal expansion coefficients of the sealing member (thermal expansion coefficient: small) and the inorganic material substrate (thermal expansion coefficient: large). It is preferable to form. Thereby, the difference of each thermal expansion coefficient of a sealing member and an inorganic material board | substrate is relieve | moderated. When this is cooled to room temperature from the high temperature state when the optical element is covered with the sealing member, the sealing member and the inorganic material substrate shrink according to their respective thermal expansion coefficients, but there is a difference in the thermal expansion coefficient between them. If it is large, the substrate may be deformed or the sealing member may be peeled off from the substrate. By interposing a second metal pattern having an intermediate thermal expansion coefficient between the two, stress based on the difference in thermal expansion coefficient between them is relieved.

The sealing member is a low-melting-point glass, the thermal expansion coefficient when the substrate was AlN low-melting glass: a ^{17.3 × 10 -6 /℃,AlN:4.5×10 -6 / ℃} . In this case, Ni (thermal expansion coefficient: 12.8 × 10 ⁻⁶ / ° C.) has an intermediate value and is preferably used as a material for forming these metal patterns.

  From the viewpoint of reducing the amount of thermal deformation of the substrate, it is preferable to form the second metal pattern over a wide range on the optical element mounting surface (front surface) of the substrate. Furthermore, it is further preferable to form a metal pattern made of the same or similar material over a wide area on the back surface of the substrate to further suppress the amount of thermal deformation of the substrate.

  In order to extend the metal pattern material on the substrate surface to the back surface of the substrate, a through hole (via hole) is provided in the substrate and the metal pattern material is passed therethrough to form the substrate surface, the pattern, and the pattern on the substrate back surface. Can be linked. Since the electrical terminal is drawn out from the surface on which the optical element of the substrate is mounted to the back surface side thereof, the surface of the substrate on which the optical element is mounted is not covered with the optical element sealing member for the electrical terminal. There is no need to provide a location, and the entire surface can be sealed with a plate-shaped sealing member. For this reason, it can be excellent in mass productivity. At this time, if the substrate does not have a through hole, the sealing member of the optical element on the surface side on which the optical element is mounted does not come out to the back surface side. In addition, when the through hole is formed at the mounting position of the optical element, the heat of the optical element can be released outside through the metal pattern material in the through hole. This improves the heat dissipation efficiency, and is particularly suitable for a group III nitride compound semiconductor light emitting device having a large calorific value.

  The method for forming the first and second metal patterns is not particularly limited, but in the embodiment, the paste of W is screen-printed on the inorganic material substrate, and further baked to form the W metal pattern on the inorganic material substrate. Formed. The Ni layer is plated on the W layer to form a metal pattern made of W \ Ni, and heat treatment is performed. W \ Ni \ Ag deposits more Ag on the plated Ni layer.

  These metal layers can also be formed by sputtering or other known methods.

  A metal thin film such as a Cu foil can be bonded to the back surface of the substrate which does not require a complicated and accurate pattern shape.

(Sealing member)
The inorganic sealing member is not particularly limited as long as it is transparent to the light receiving and emitting wavelength of the optical element and can protect the optical element, but considering that the heat resistant temperature of the optical element is about 600 ° C., It is preferable to employ a low-melting glass having a lower melting point (softening point).

As such low melting point glass, in addition to lead glass and chalcogenide glass, SiO ₂ —Nb ₂ O ₅ system, B ₂ O ₃ —F system, P ₂ O ₅ —F system, P ₂ O ₅ —ZnO system, SiO ₂ -B ₂ O ₃ -La ₂ O ₃ system or may be employed glass _SiO 2 _-B 2 _{O 3} -based. Any of these low melting glass can be press-molded at 350 to 600 ° C.

  A fluorescent material can also be dispersed in the sealing member. As the fluorescent material, powder of an inorganic fluorescent material can be used and mixed with the low melting point glass. It is also possible to fluoresce the low melting point glass by doping rare earth ions. By appropriately combining the light emitting element and the fluorescent material, it is possible to obtain an arbitrary emission color including white light.

  In this combination of the sealing member and the optical element, the Abbe number of the sealing member is 40 or less, the refractive index is 1.6 or more, and the light receiving and emitting wavelength of the optical element is 546.1 nm (the wavelength of Na e-line) ) The following is preferable. That is, it is advantageous that the external quantum efficiency of light emitted in the high refractive material is higher in the refractive index of the sealing material with respect to the wavelength of the emitted light. The refractive index of an optical material is defined by the d-line of Na. Generally, the shorter the wavelength, the higher the refractive index. In particular, in light emitting devices with short wavelength emission, which is a problem with conventional resin sealing, light output is reduced due to yellowing of the resin by selecting a material having a high refractive index in the Na d-line and a large refractive index change with respect to the wavelength. In addition, it is possible to realize sealing with a material having a high refractive index for short-wavelength light, and to obtain a high external quantum efficiency.

Examples of the low melting point glass having such optical characteristics include SiO ₂ —Nb ₂ O ₅ based glass, and SiO ₂ —Nb ₂ O ₅ —Na ₂ O glass is particularly preferable.

  The light emitting element can be surrounded by the sealing member by superimposing a sealing member made of plate-shaped low melting point glass on the optical element and heating it so as to be softened. This heating is preferably performed in a reduced-pressure atmosphere so that air does not enter between the sealing member and the optical element. By this heating, a chemical reaction occurs at the interface between the low melting point glass and the second metal pattern, and both are firmly bonded.

  Concavities and convexities can be formed on the softened sealing member superimposed on the optical element. For example, by providing the sealing member with a recess (thin portion) along the dividing line of the inorganic material substrate, the dividing operation is facilitated. Also, as a result, the sealing member is formed with a fine grid pattern of convex portions corresponding to the chips and concave portions along the dividing lines. Therefore, the thermal deformation does not correspond to the plate-like size before the formation of the unevenness, but corresponds to a fine lattice-like size, so that the thermal deformation of the sealing member can be reduced, and the sealing member Even if there is a large difference in thermal expansion coefficient between the substrate and the substrate, the separation between the substrate and the sealing member can be prevented, and further, the problem of warpage of the substrate can be alleviated.

  By forming the convex portion of the sealing member into a convex lens shape, the light from the light emitting element can be concentrated in the optical axis direction. Further, external light can be concentrated on the light receiving element. In this case, it is preferable to use a material having a high refractive index as the material of the sealing member.

  When the sealing member in the softened state is bonded to the optical element, it is preferably performed in a reduced pressure state. This is to prevent air from being trapped inside the sealing member. The unevenness of the sealing member is formed by pressing after the plate-like sealing member is bonded to the optical element, and while the sealing member is maintained in a softened state or by reheating to soften the sealing member. Is possible.

  The present invention will be described below with reference to examples.

(Twelfth embodiment)
In this example, a flip chip type group III nitride compound semiconductor light emitting element 3010 shown in FIG. 65 was used as an optical element. This light emitting element emits blue light.

The specifications of each layer of the light emitting element 3010 are as follows.
Layer: Composition p-type layer 3015: p-GaN: Mg
Layer 3014 including a light emitting layer: InGaN layer n-type layer 3013: n-GaN: Si
Buffer layer 3012: AlN
Substrate 3011: Sapphire

  An n-type layer 3013 made of GaN doped with Si as an n-type impurity is formed on the substrate 3011 through a buffer layer 3012. Here, sapphire is used for the substrate 3011, but the present invention is not limited to this. Sapphire, spinel, silicon carbide, zinc oxide, magnesium oxide, manganese oxide, zirconium boride, group III nitride compound semiconductor single crystal Etc. can be used. Further, the buffer layer is formed by MOCVD using AlN, but the present invention is not limited to this, and GaN, InN, AlGaN, InGaN, AlInGaN, etc. can be used as the material, and molecular beam crystal growth is used as the manufacturing method. A method (MBE method), a halide vapor phase epitaxy method (HVPE method), a sputtering method, an ion plating method, or the like can be used. When a group III nitride compound semiconductor is used as the substrate, the buffer layer can be omitted.

  Further, the substrate and the buffer layer can be removed as necessary after the semiconductor element is formed.

  Here, the n-type layer 3013 is formed of GaN, but AlGaN, InGaN, or AlInGaN can be used.

  The n-type layer 3013 is doped with Si as an n-type impurity, but Ge, Se, Te, C, or the like can also be used as an n-type impurity.

  The layer 3014 including a light emitting layer may include a quantum well structure (multiple quantum well structure or single quantum well structure), and the light emitting element has a single hetero type, a double hetero type, and a homojunction type. Things may be used.

  The layer 3014 including a light emitting layer may include a group III nitride compound semiconductor layer having a wide band gap doped with Mg or the like on the p-type layer 3015 side. This is for effectively preventing electrons injected into the layer 3014 including the light emitting layer from diffusing into the p-type layer 3015.

  A p-type layer 3015 made of GaN doped with Mg as a p-type impurity is formed on the layer 3014 including the light-emitting layer. The p-type layer 3015 can be AlGaN, InGaN, or InAlGaN, and Zn, Be, Ca, Sr, or Ba can be used as the p-type impurity. After introducing the p-type impurity, the resistance can be lowered by a known method such as electron beam irradiation, heating in a furnace, or plasma irradiation.

  In the light emitting device having the above-described configuration, each group III nitride compound semiconductor layer is formed by performing MOCVD under general conditions, a molecular beam crystal growth method (MBE method), a halide vapor phase epitaxy method (HVPE method). ), A sputtering method, an ion plating method, or the like.

  The n-electrode 3018 is composed of two layers of Al and V. After the p-type layer 3015 is formed, the p-type layer 15, the layer 3014 including a light emitting layer, and a part of the n-type layer 3013 are removed by etching. It is formed on the exposed n-type layer 3013 by vapor deposition.

  A p-electrode 3016 is stacked on the p-type layer 3015 by vapor deposition. After forming each layer and each electrode by the above process, the separation process of each chip is performed.

  Next, an inorganic material substrate for mounting the light emitting element 3010 is prepared.

  The base material of the inorganic material substrate 3021 of the embodiment is AlN, and metal patterns 3023 and 3024 are formed on the upper and lower surfaces thereof. The upper surface side pattern 3023 includes first metal patterns 3025n and 3025p and a second metal pattern 26, as shown in FIG. The first metal pattern 3025n is connected to the n electrode 3018 of the optical element 3010 via an Au bump 3027, and the first metal pattern 3025p is connected to the p electrode 3016 of the optical element via an Au bump 3028. As shown in FIG. 67, the first metal pattern 25n is electrically coupled to the metal pattern 3024n on the back surface of the substrate through a through hole 3031 formed in the base material of the inorganic material substrate 3021. Similarly, the first metal pattern 3025p is electrically coupled to the metal pattern 3024p on the back surface of the substrate through the through hole 3032. Each through hole 3031 and 3032 is filled with Cu by plating as shown in FIG. 68 (enlarged view of the main part of FIG. 67).

  The second metal pattern 3026 is formed in an annular region that is separated from and surrounds the first metal patterns 3025n and 3025p.

  The back side metal patterns 3024n and 3024p are preferably formed in as large an area as possible, as shown in FIG. In this way, by bonding a large area pattern made of a metal material having a thermal expansion coefficient intermediate between the sealing member and the substrate to the back surface of the substrate 3021, the deformation amount of the substrate 3021 when the thermal history is applied is sealed. The deformation amount of the member 3029 can be closer. Thereby, the curvature of the board | substrate 3021 and peeling between a sealing member and a board | substrate can be prevented more reliably.

Each metal pattern is formed as follows. First, a paste containing W is applied to both surfaces of the inorganic material substrate 3021 before firing in which through holes are formed by screen printing or the like and through holes for forming through holes. Thereafter, AlN is sintered at a temperature exceeding 1500 ° C. and paste W is baked onto the substrate 3021. Thereby, W and a board | substrate are couple | bonded firmly. It is also possible to form this W by sputtering. Further, instead of W, a refractory metal such as Mo may be used.
Next, a Ni layer is formed on the W pattern by plating, and further heated at approximately 700 ° C. to react Ni and W. As a result, the metal pattern is firmly bonded on the AlN substrate 3021.

  Ni is chemically bonded to a sealing member made of an inorganic light-transmitting material. Further, since the inorganic material of the softened sealing member has good wettability to Ni, the material of the sealing member comes into contact with the entire surface of the second electrode pattern to prevent generation of bubbles, and both A strong binding force can be obtained between them.

  In the first metal patterns 3025n and 3025p, it is preferable that an Au bump can be satisfactorily bonded on the Ni layer and an Ag layer having a high reflectance is formed. Note that if the light emitting element has a reflective surface on the bottom surface, only the bonding property by the Au bumps should be considered. For example, for a blue light emitting element, an Au layer is formed on the Ni layer. May be.

  Since the through holes 3031 and 3032 are formed immediately below the first metal patterns 3025n and 3025p, the heat of the optical element 10 can be efficiently transferred to the outside (the back surface of the substrate 3021 through the metal material in the through holes. ).

  Next, as shown in FIG. 67, the light emitting element 3010 is mounted at a predetermined position by Au bumps 3027 and 3028. Note that the bump 3027 is connected to the n-electrode 3018 of the light-emitting element 3010, and the bump 3028 is connected to the p-electrode 3016 of the light-emitting element 3010. 66, the light emitting element 3010 is surrounded by the first metal patterns 3025n and 3025p.

  Next, as illustrated in FIG. 67, a plate-like low melting glass serving as a sealing member is stacked on the surface side of the substrate 3021, and this is heated and fused in a reduced-pressure atmosphere to seal the light emitting element 3010. Thereby, Ni on the surface of the metal pattern and the low melting point glass 3039 are chemically bonded and firmly bonded via the oxide on the surface of Ni. Moreover, residual bubble generation at the time of sealing can be prevented.

  When the plate-like low-melting glass is softened, it is preferable to press and form irregularities on it. By making the concave portion of the sealing member 3039 coincide with the dividing line 3037 (notch) of the substrate 3021, the substrate can be easily divided. The convex portion of the sealing member 3039 is preferably formed in a lens shape to improve light extraction efficiency.

  In the series of manufacturing steps described above, the light emitting element 3010 and the first metal patterns 3025n and 3025p are connected by the gold bumps 3027 and 3028 having a melting point higher than the processing temperature, so that the bumps 3027 and 3028 are softened at the sealing temperature. There is nothing. Therefore, even if force is applied to the light emitting element in the sealing operation, the light emitting element 3010 is not displaced from the specified position. Further, by adopting a flip chip type as the light emitting element 3010, a bonding wire is omitted, and this point is also mechanically stable. Therefore, it can be said that the optical device having such a configuration is suitable for a mass production process.

Furthermore, the thermal expansion coefficient of the Ni layer that occupies most of the film thickness of the metal pattern is 12.8 × 10 ⁻⁶ / ° C., and the thermal expansion coefficient of AlN (4.5 × 10 ⁻⁶ / ° C.) and the low melting point. An intermediate value of the coefficient of thermal expansion (17.3 × 10 ⁻⁶ / ° C.) of the glass 3039 is taken.

  In this manner, by interposing the metal pattern between the inorganic sealing member 3039 and the inorganic material substrate 3021, the sealing member 3039 and the substrate 3021 are firmly bonded, and in addition, the sealing member 3039 The stress caused by the difference between the thermal expansion coefficients of the substrate 3021 can be relaxed. Accordingly, it is possible to reliably prevent a warp or a crack in the substrate 3021 or a problem that the sealing member 3039 and the substrate 3021 are peeled off.

  Finally, the substrate 3021 is divided at the dividing line 3037 to obtain the optical device of the embodiment.

  70 to 73 show a modification of this embodiment. 70 to 73, the same elements as those in FIG. 22 are denoted by the same reference numerals, and the description thereof is omitted.

  In the optical device of FIG. 69, the second metal pattern 3041 has a rectangular annular shape.

  In the optical device of FIG. 70, the second metal pattern 43 is a discontinuous body.

  In the example shown in FIG. 72, a GaN substrate 3011a or SiC is employed instead of the sapphire substrate as the substrate of the flip chip type light emitting element. Since such an element substrate has a higher refractive index than a sapphire substrate, the light extraction efficiency can be improved by combining this with a high refractive index sealing member (such as a low-melting glass).

  By chamfering the peripheral edge of the GaN substrate 3011a, the light extraction efficiency from the optical element 3010 is further improved.

In the example of FIG. 72, Al ₂ O ₃ (thermal expansion coefficient: 6.7 × 10 ⁻⁶ ), which has a larger thermal expansion coefficient than AlN and is cheaper, is used as the base material of the inorganic material substrate 3051.

In the example shown in FIG. 73, Al ₂ O ₃ containing glass is used as the base material of the inorganic material substrate 3061. Then, Cu foil was bonded to the entire surface of the substrate 3061. Through holes 3031 and 3032 were filled with Cu by plating. When the inorganic material substrate 3061 is heated to 1000 ° C., Cu and Al ₂ O ₃ are chemically bonded. By forming a Cu layer having a thermal expansion coefficient equivalent to that of glass over a wide range on the back surface of the Al ₂ O ₃ substrate containing glass, problems of substrate warpage and separation between the sealing member and the substrate can be prevented.

  The first metal pattern and the second metal pattern are the same base (Cu foil), and only the areas 3025n and 3025p for mounting the light emitting elements are formed by applying Ag or Au plating. This can be easily formed by masking the second metal pattern area.

  For example, Ni may be plated on the same base Cu foil to form a reflective layer of the second metal pattern for the blue light emitting element. Thus, the first metal patterns 3025n and 3025p and the second metal pattern 3026 may not be separated.

(Thirteenth embodiment)
FIG. 74 shows an optical device of this example. The light emitting element 3100 used in this embodiment is a type having electrodes on the upper and lower sides. As a result, a bonding wire 3101 is required.

  A through hole 3111 is formed in the inorganic material substrate 3110 made of AlN, and the through hole 3111 is filled with Cu by plating. Metal patterns made of W \ Ni are formed over a wide range on both surfaces of the substrate 3110. The formation method of this metal pattern is the same as that of Example 12.

  From the viewpoint of improving heat extraction efficiency, one electrode of the light emitting element 3100 is mounted on the first metal pattern 3113a above the through hole 3111. The bonding wire 3101 is drawn out from the other electrode and bonded to the second metal pattern 3113b.

  On the other hand, a plate-like spacer 3120 made of low melting point glass is prepared. Holes through which the light emitting element 3100 and the bonding wire 3101 are passed are formed in the spacer 3120, and the spacer 3120 can be superimposed on the substrate 3110 without any interference with these (state of FIG. 74). In this state, a sealing member 3130 made of low melting point glass is attached. At this time, the bonding wire 3101 may be deformed by the material of the sealing member, but the deformation is restricted by the spacer 3120. Therefore, cutting and short-circuiting of the bonding wire 3101 can be prevented in advance.

  Note that, from the viewpoint of protecting the bonding wire 3101, it is preferable that the spacer 3120 wraps around to the lower side of the bonding wire 3101.

  Hereinafter, the embodiment shown in FIGS. 75 to 83 will be described in detail.

(Light emitting element)
The light emitting elements include light emitting diodes, laser diodes and other light emitting elements. The emission wavelength of the light emitting element is not particularly limited, and a group III nitride compound semiconductor element effective for ultraviolet to green light, a GaAs semiconductor element effective for red light, or the like can be used. In addition, a light-emitting element formed of SiC, AlInGaP, or the like can be used.

  In the above, the group III nitride compound semiconductor light-emitting device having an insulating substrate has a problem of exhaust heat as described above, and particularly when this light-emitting device is used as, for example, a white light source, a high output is obtained. It has been demanded.

Here, the group III nitride compound semiconductor is represented by a general formula of Al _X Ga _Y In _1- XYN (0 <X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ X + Y ≦ 1). Among these, those containing Al include a so-called binary system of AlN, a so-called ternary system of Al _X Ga _1-X N and Al _X In _1-X N (where 0 <X <1). In the group III nitride compound semiconductor and GaN, at least part of the group III element may be substituted with boron (B), thallium (Tl), etc., and at least part of nitrogen (N) may be phosphorus (P ), Arsenic (As), antimony (Sb), bismuth (Bi) and the like.

  Further, the group III nitride compound semiconductor may contain an arbitrary dopant. As the n-type impurity, silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C), or the like can be used. As the p-type impurity, magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), or the like can be used. Although the group III nitride compound semiconductor can be exposed to electron beam irradiation, plasma irradiation or furnace heating after doping with p-type impurities, it is not essential.

  The group III nitride compound semiconductor layer is formed by MOCVD (metal organic chemical vapor deposition). It is not necessary to form all the semiconductor layers constituting the element by the MOCVD method, and the molecular beam crystal growth method (MBE method), halide vapor phase epitaxy method (HVPE method), sputtering method, ion plating method, etc. are used in combination. Is possible.

  As a structure of the light-emitting element, a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, or a pn junction can be used. A quantum well structure (single quantum well structure or multiple quantum well structure) can also be adopted as the light emitting layer. As such a group III nitride compound semiconductor light emitting device, a face-up type in which the main light emitting direction (electrode surface) is set to the optical axis direction of the light emitting device, or a flip that uses reflected light with the main light emitting direction opposite to the optical axis direction. A chip type can be used.

(Submount)
The base material of the submount can be appropriately selected according to the use of the light emitting device as long as it has high thermal conductivity. For example, an inorganic material such as AlN, Al ₂ O ₃ , SiC, Si ₃ N ₄ , or Si can be selected.

  The inorganic material forming the submount has an intermediate thermal expansion coefficient between the semiconductor material of the light emitting element and the metal material of the lead frame. Therefore, even if a large thermal history is applied in the manufacturing process of the light emitting device (for example, when the submount is soldered to the first and second lead frames), it is caused by the coefficient of thermal expansion between the light emitting element and the lead frame. To relieve stress.

  The shape of the submount can be set at one end in a first recess formed in the first lead frame, and the other end can be set in a second recess formed in the second lead frame. I can do it.

  When a flip chip type light emitting element is employed, a wire is omitted, so that a large current can be applied to the light emitting element. As a result, the light-emitting element can emit light with high luminance, and heat from the light-emitting element can be efficiently released. Further, by omitting the wire, the impact resistance of the light emitting device is improved.

  Instead of wires, wiring patterns such as through holes and side metals are formed on the submount. With this wiring pattern, each electrode of the light emitting element mounted on the upper surface of the submount is electrically coupled to the first lead frame and the second lead frame. The metal pattern forming material needs to have a surface layer compatible with a bonding material for bonding the light emitting element. For example, when an Au bump is used as the bonding material, the surface layer of the metal pattern is formed of Au or Ag.

  In addition to the Au bumps described above, eutectic materials such as solder bumps and solder plating can be used as a bonding material for bonding the light emitting element and the wiring pattern of the submount.

(First lead frame, second lead frame)
A first recess is formed at one end of the first lead frame, and a second recess is formed at one end of the second lead frame. The first recess and the second recess can be formed by cutting or etching a groove in the thickness direction in the first and second lead frames, respectively. Also, the first and second recesses can be formed by pressing the materials of the first and second lead frames, respectively. Moreover, a convex part can be provided in the surface of the 1st and 2nd lead frame, and the part enclosed by the convex part can also be made into a recessed part.

  These recesses serve as receiving seats for the submount, and the shape and depth thereof are appropriately designed according to the submount.

  One end of the submount is set in the first recess, the other end is set in the second recess, and the submount and the first and second lead frames are soldered with a metal eutectic material (for example, (Pb-Sn, Au-Sn, etc.) or Ag paste or the like.

  By reducing the margin between the submount and the first and second recess peripheral walls, for example, when the submount and the first and second recesses are substantially fitted, the submount The mounting position is stable, and thus the displacement of the light emitting element is prevented. Therefore, the light distribution characteristic when the light emitting element is sealed with the lens-shaped sealing member is stabilized.

  In addition, when the submount and the first and second lead frames are set at substantially the same height in the state where they are set in the first recess and the second recess, the light emitted from the light emitting element to the side is reduced. Control becomes easy and light extraction efficiency can be improved.

  Further, when the submount and the first and second lead frames are substantially the same height, and the gap between the submount and the first and second lead frames is small (fitted state) ), That is, if both are substantially flush, the reflection efficiency by the lead frame is also improved.

  Examples of the present invention will be described below.

  The light emitting element 10 is a group III nitride compound semiconductor light emitting element. The configuration is schematically shown in FIG. As shown in FIG. 75, the light emitting element 4010 has a configuration in which a plurality of group III nitride compound semiconductor layers are stacked on a sapphire substrate. The specifications of each layer of the light emitting element 4010 are as follows.

Layer: Composition p-type semiconductor layer 4015: p-GaN: Mg
Layer 4014 including light emitting layer: InGaN layer including n-type semiconductor layer 4013: n-GaN: Si
Buffer layer 4012: AlN
Substrate 4011: Sapphire

  On the substrate 4011, an n-type semiconductor layer 4013 made of GaN doped with Si as an n-type impurity was formed via a buffer layer 4012. Here, sapphire is used for the substrate 4011. However, the present invention is not limited to this, but sapphire, spinel, silicon, silicon carbide, zinc oxide, gallium phosphide, gallium arsenide, magnesium oxide, manganese oxide, group III A nitride compound semiconductor single crystal or the like can be used. Further, the buffer layer is formed by MOCVD using AlN, but the present invention is not limited to this, and GaN, InN, AlGaN, InGaN, AlInGaN, etc. can be used as the material, and molecular beam crystal growth is used as the manufacturing method. A method (MBE method), a halide vapor phase epitaxy method (HVPE method), a sputtering method, an ion plating method, an electron shower method, or the like can be used. When a group III nitride compound semiconductor is used as the substrate, the buffer layer can be omitted.

  Further, the substrate and the buffer layer can be removed as necessary after the semiconductor element is formed.

  Here, the n-type semiconductor layer 4013 is formed of GaN, but AlGaN, InGaN, or AlInGaN can be used.

  In addition, although the n-type semiconductor layer 4013 is doped with Si as an n-type impurity, Ge, Se, Te, C, or the like can also be used as an n-type impurity.

  The n-type semiconductor layer 4013 can have a two-layer structure including a low electron concentration n layer on the layer 4014 side including a light emitting layer and a high electron concentration n + layer on the buffer layer 12 side.

  The layer 4014 including a light emitting layer may include a quantum well structure (multiple quantum well structure or single quantum well structure), and the light emitting element has a single hetero type, a double hetero type, or a homojunction type. Things may be used.

  The layer 4014 including a light emitting layer can also include a group III nitride compound semiconductor layer with a wide band gap doped with an acceptor such as magnesium on the p-type semiconductor layer 4015 side. This is for effectively preventing the electrons injected into the layer 4014 including the light emitting layer from diffusing into the p-type layer 4015.

  A p-type semiconductor layer 4015 made of GaN doped with Mg as a p-type impurity was formed on the layer 4014 including the light-emitting layer. The p-type semiconductor layer 4015 can be AlGaN, InGaN, or InAlGaN, and Zn, Be, Ca, Sr, or Ba can be used as the p-type impurity.

  Further, the p-type semiconductor layer 4015 can have a two-layer structure including a low hole concentration p− layer on the layer 4014 side including a light emitting layer and a high hole concentration p + layer on the electrode side.

  In the light emitting diode having the above-described configuration, each group III nitride compound semiconductor layer is formed by performing MOCVD under general conditions, a molecular beam crystal growth method (MBE method), a halide vapor phase epitaxy method (HVPE method). ), A sputtering method, an ion plating method, an electron shower method, or the like.

  The n-electrode 4018 is composed of two layers of Al and V. After the p-type semiconductor layer 4015 is formed, the p-type semiconductor layer 4015, the layer 4014 including a light emitting layer, and a part of the n-type semiconductor layer 4013 are etched. It is removed and formed on the n-type semiconductor layer 4013 by vapor deposition.

  The p-electrode 4016 is a film containing gold and is stacked on the p-type semiconductor layer 4015 by vapor deposition.

  After forming each semiconductor layer and each electrode by the above process, a separation process of each chip is performed.

  As shown in FIG. 76A, the submount 4020 is an insulating plate-like member made of AlN. Surface electrodes 4021 and 4022 are formed on the upper surface thereof, and back electrodes 4023 and 4024 are formed on the rear surface side. ing. These electrodes 4021, 4022, 4023, and 4024 are formed by laminating titanium, Ni, and Au in this order, and are electrically connected by a through hole 4025 (filled with a conductive metal).

  In the submount 4020 of this embodiment, the front surface electrodes 4021 and 4022 and the back surface electrodes 4023 and 4024 are electrically connected by through holes. However, a metal layer (side metal) is formed on the side surface of the submount 4020 so that the both are electrically connected. You can also plan.

  The n electrode of the light emitting element 4010 is electrically connected to the surface electrode 4021 through the Au bump 4031, and the p electrode is electrically connected to the surface electrode 4022 through the Au bump 4032. It is also possible to use solder balls instead of the bumps.

  A groove 4043 and a groove 4044 are formed by cutting at the mutually opposing edges of the first lead frame 4041 and the second lead frame 4042, respectively. The shapes of the grooves 4043 and 4044 are such that both ends of the submount 4020 can be fitted with almost no gap, and thereby the position of the submount 4020 is defined. The first and second lead frames 4041 and 4042 and the submount 4020 are fixed with solder (Sn—Ag cream solder or the like) 4035.

  In this embodiment, the depths of the grooves 4043 and the grooves 4044 are adjusted so that the surfaces of the first and second lead frames 4041 and 4042 and the surface of the submount 4020 have substantially the same height. This facilitates control of light emitted from the light emitting element 4010 (particularly, light emitted to the side).

  Alternatively, the groove may be deepened so that light emitted from the light-emitting element 4010 is reflected by a sidewall of the groove.

  Then, as shown in FIG. 77, the light emitting element 4010 is covered with a sealing member 4051 to obtain a light emitting device 4050 of the example. By mixing a fluorescent material in the sealing member 4051, an arbitrary emission color such as white can be obtained. The sealing member 4051 is appropriately selected from those that can transmit light from the light-emitting element according to the use of the light-emitting device. For example, it can be formed of an organic material such as epoxy resin, polyimide, or silicone elastomer, and an inorganic material such as low-melting glass. In this embodiment, the sealing member 4051 is formed with an imide resin that can withstand reflow, and then the submount 4020 is soldered to the first and second lead frames 4041 and 4042.

  FIG. 78 shows another form of a sealing member 4053. In this example, the end portions of the first and second lead frames 4041 and 4042 and the submount 4020 are also covered with the sealing member 4053. The sealing member 4053 is formed by molding after fixing the submount 4022 to the first and second lead frames 4041 and 4042. An epoxy resin can be adopted as the molding material.

  According to the light emitting device 4050 of the embodiment configured as described above, the heat generated in the light emitting element 4010 is transmitted to the first and second lead frames 4041 and 4042 through the submount 4020 almost evenly. Therefore, a sufficient heat transfer path is ensured and the heat dissipation efficiency is improved.

  Further, the position of the submount 4020, that is, the position of the light emitting element 4010 is defined by the groove 4043 and the groove 4044. Therefore, the light distribution characteristic as the light emitting device is stabilized.

  Described below is a modification of each element of the above embodiment. The same elements as those shown in FIGS. 77 to 78 are denoted by the same reference numerals, and the description thereof is omitted.

  In the example of FIG. 80, the groove 4045 of the first lead frame 4041 is shortened, and the groove 4046 is formed long in the second lead frame 4042. As a result, the member of the second lead frame 4042 (the peripheral wall of the groove 4046) is positioned immediately below the light emitting element 4010. Therefore, the distance from the light emitting element 4010 to the lead frame is the shortest, and heat can be released from the light emitting element 4010 more efficiently.

  In the example of FIG. 80, the groove 4047 and the groove 4048 are open to the side surfaces of the lead frames 4041 and 4042. This makes it easier to set the submount 4020 to the groove 4047 and the groove 4048.

  In the example of FIG. 81, a groove 4049 is formed on the side of the first lead frame 4041. As shown in this embodiment, the groove forming direction and position in the lead frame are arbitrary and can be appropriately selected according to the use of the light emitting device.

  In the example shown in FIG. 82, the recesses 4061 and 4062 are formed by pressing at the tips of the first and second lead frames 4041 and 4042. A submount can be set in the recesses 4061 and 4062 in the same manner as in FIG.

  In the example shown in FIG. 83, U-shaped convex portions 4071 and 4072 are formed on the tips of the first and second lead frames 4041 and 4042 by pressing. Portions surrounded by the convex portions 4071 and 4072 become concave portions 4073 and 4074. The submount is set in the recesses 4073 and 4074 in the same manner as in FIG.

  FIG. 84 is a cross-sectional view showing the configuration of the light emitting device according to the thirteenth embodiment. The light emitting device 5010 includes a substrate portion 5011 as a power supply member, an LED element 5012 mounted on the upper surface of the substrate portion 5011, and a buffer layer 5013 sealed on the upper surface of the substrate portion 5011 so as to cover the LED element 5012. And a sealing member 5014 formed to cover the buffer layer 5013 and the upper surface of the substrate portion 5011.

  The substrate portion 5011 includes a high expansion ceramic substrate 5011a (insulating substrate), wiring layers 5011b, 5011c, 5011d, and 5011e formed in a predetermined pattern on the upper surface of the ceramic substrate 5011a, and a lower surface of the ceramic substrate 5011a. The wiring layers 5011f and 5011g formed in a predetermined pattern, the Au plating film 5011h coated on the surface of the wiring layer 11c, the Au plating film 5011i coated on the surface of the wiring layer 5011d, and the surface of the wiring layer 5011f The coated Au plated film 5011j, the Au plated film 5011k coated on the surface of the wiring layer 5011g, the through hole 511l connecting the wiring layer 5011b and the wiring layer 5011f, and the through connecting the wiring layer 5011d and the wiring layer 5011g. And a hall 5011m.

As the ceramic substrate 5011a, for example, a glass-containing Al ₂ O ₃ material (thermal expansion coefficient: 13.2 × 10 ⁻⁶ / ° C.) can be used. The wiring layers 5011b, 5011d, 5011j, and 5011g function as electrodes for supplying power. Further, the Au plating films 5011h, 5011i, 5011j, and 5011k are provided in order to improve connectivity, conductivity, and corrosion resistance. The substrate portion 5011 has wiring layers 5011b to 5011g, Au plating films 5011h, 5011i, and 5011j, Au plating films 5011k, and through holes 511l and 5011m formed in the ceramic substrate 5011a in advance before mounting the LED element 5012. It is necessary to keep it.

The LED element 12 is configured by using a semiconductor such as GaN or AlInGaP, and the chip size is 0.3 × 0.3 mm (standard size), 1 × 1 mm (large size), or the like. A silicon resin is used for the buffer layer 5013. Examples of the sealing member 5014 include “K-PSK100” (thermal expansion coefficient: 11.4 × 10 ⁻⁶ / ° C.) manufactured by Sumita Optical Glass Co., Ltd.

  As the sealing member 5014, a glass material having translucency and a low melting point is used. The LED element 5012 has power supply electrodes 5012 a and 5012 b on the lower surface, and the electrodes 5012 a and 5012 b are soldered onto a predetermined wiring layer of the substrate portion 11.

  Hereinafter, assembly of the light emitting device 10 will be described.

  First, the LED element 5012 is positioned so that the electrodes 5012a and 5012b are placed on the wiring layers 5011c and 5011d of the substrate portion 5011, and the wiring layer 5011c and the electrode 5012a, and the wiring layer 5011d and the electrode 5012b are soldered, respectively. .

  Next, a liquid silicon resin material is dropped from directly above the central portion of the LED element 5012, and the buffer layer 13 is formed by coating the entire upper surface and side surfaces of the LED element 5012 in layers.

  Next, with the buffer layer 5013 formed, the substrate portion 5011 and the LED element 5002 are placed in a temperature atmosphere of about 150 ° C., and the buffer layer 5013 is primarily cured.

Next, a sealing member 5014 made of a glass material is sealed on the surface of the buffer layer 5013 and the surface of the substrate portion 5011. A mold is used for sealing the sealing member 5014, and it is formed into a semicircular shape as shown in FIG. 84 by a predetermined temperature atmosphere and pressure press. Thus, the light emitting device 5010 is completed. Note that, during the glass sealing process, the silicon resin breaks the chemical bond by heat and becomes SiO ₂ , but the blackening phenomenon does not occur and does not become a light absorption factor.

  In the light emitting device 5010 having the above configuration, for example, if the wiring layer 5011f is on the anode side of the LED element 5012, the plus side of a DC power supply (not shown) is connected to the wiring layer 5011f, and the minus side is connected to the wiring layer 5011g. Is done. When a forward voltage is applied to the LED element 12 via the bump 2 electrically connected to the pad electrode 5108 and the n-type electrode 5109, hole and electron carrier recovery is performed in the light emitting layer in the LED element 5012. Coupling occurs to emit light, and output light is emitted to the outside of the LED element 5012 through the sapphire substrate 5101. Most of this light passes through the sealing member 5014 and exits from the sealing member 5014, and part of the light is reflected from the inner surface and exits from the sealing member 5014.

  According to the thirteenth embodiment described above, the following effects are obtained.

(1) By sealing the whole with the sealing member 5014 made of a glass material, it is possible to reduce attenuation of light due to yellowing or coloring, which is a problem in resin sealing.

(2) By providing the buffer layer 5013 around the LED element 5012, the external force applied to the LED element 5012 through the glass material having a high viscosity when the sealing member 5014 is sealed is reduced. That is, since the LED element 5012 and the sealing member 5014 are not in direct contact with each other through the buffer layer 5013, the buffer layer 5013 can absorb the stress caused by the thermal expansion / contraction.

(3) By sealing the LED element 5012 with glass through the buffer layer 5013, it is possible to prevent the occurrence of cracks in the vicinity of the LED element 5012. Such a configuration in which the buffer layer 5013 is provided is particularly effective in the large-size (1 mm × 1 mm) LED element 5012 in which the contact area with the sealing member 5014 is widened.

(4) By surrounding the LED element 5012 with the buffer layer 5013, a short circuit between the electrodes due to the crushing of the bump 5002 can be prevented. Further, since the buffer layer 5013 suppresses the collapse of the bump shape, the optical axis of the LED element 5012 can be prevented from being tilted by glass sealing.

(5) When the LED element 5012 is formed by scribing the wafer, fine unevenness is generated on the side surface of the scribed LED element 5012. This unevenness forms an unbalanced portion of stress at the interface between the LED element 5012 and the sealing member 5014 for the glass-sealed light emitting device 5010, which in turn causes microcracks. With respect to such a problem, by providing the buffer layer 5021 on the side surface serving as the scribe surface of the LED element 5012, generation of micro cracks at the time of thermal contraction of the sealing member 5014 can be prevented.

  FIG. 85 is a sectional view showing a modification of the light emitting device according to the thirteenth embodiment. The light emitting device 5020 is different in that the buffer layer 5021 is provided only on the side surface of the LED element 5012. Even with such a configuration, a short circuit between the electrodes due to the crushing of the bumps 5002 and stress caused by thermal contraction of the sealing member 5014 can be relieved. In addition, since the buffer layer is not provided on the substrate side of the LED element 12, extraction of light emitted from the LED element 5012 is not hindered.

  FIG. 86 is a cross-sectional view showing a light emitting device according to the fourteenth embodiment. The light emitting device 5030 in FIG. 86 is a face-up type, and is sealed so as to cover the substrate part 31 as a power supply member, the LED element 5032 mounted on the upper surface of the substrate part 31, and the LED element 5032. The buffer layer 5033, the sealing member 5034 formed so as to cover the upper surface of the buffer layer 33 and the substrate portion 31, and the wires 5035a and 5035b for connecting the electrode of the LED element 5032 and the wiring layer on the substrate portion 5031. And is configured.

  The substrate portion 5031 includes a ceramic substrate 5031a as an insulating substrate using the same material as the substrate portion 5011 in FIG. 84, wiring layers 5031b and 5031c formed in a predetermined pattern on the upper surface of the ceramic substrate 5031a, and the ceramic substrate 5031a. Wiring layers 5031d and 5031e formed in a predetermined pattern on the lower surface, through-holes 5031f connecting the wiring layers 5031b and 5031d, and through-holes 5031g connecting the wiring layers 5031c and 5031e. . The wiring layers 5031b to 5031e are provided with an Au plating film on the surface, but the illustration is omitted here.

For example, a glass-containing Al ₂ O ₃ material can be used for the ceramic substrate 5031a. The wiring layers 5031b to 5031e function as electrodes for supplying power. In addition, before the LED element 5032 is mounted on the substrate portion 5031, the wiring layers 5031b to 5031e and the through holes 5031f and 5031g need to be formed in the ceramic substrate 5031a in advance. As the sealing member 5034, a glass material having translucency and a low melting point is used.

  The LED element 5032 is fixed on the wiring layer 5031c with an adhesive or the like. One electrode (not shown) on the upper surface of the LED element 5032 and the wiring layer 5031b are connected by a wire 5035a, and the other upper surface of the LED element 5032 is connected. The electrode (not shown) and the wiring layer 5031c are connected by a wire 5035b.

  The buffer layer 5033 covers the exposed surface of the LED element 5032 and the wires 5035a and 5035b.

  The sealing member 5034 is formed in a hemispherical shape so as to cover the surface of the buffer layer 5033 and the wiring layer exposed on the upper surface of the substrate portion 5031 and a part of the exposed portion of the substrate portion 5031.

  Hereinafter, assembly of the light-emitting device 5030 will be described.

  First, a substrate portion 5031 in which wiring layers 5031b to 5031e and through holes 5031f and 5031g are formed on a ceramic substrate 5031a is prepared, and an LED element 5032 is mounted at a predetermined position on the wiring layer 5031c.

  Next, the LED element 5032 and the wiring layers 5031b and 5031c are connected by bonding using the wires 5035a and 5035b.

  Next, a liquid silicon material is dropped so as to have a predetermined thickness so as to cover the exposed surface of the LED element 5032 and the wires 5035a and 5035b.

  Next, after placing in a temperature atmosphere of about 150 ° C. having the LED element 5032 and the wires 5035a and 5035b and performing primary curing of the buffer layer 5033, a sealing member 5034 based on molding of a glass material is formed around the buffer layer 5033. Form. Thus, the light emitting device 5030 is completed.

  In the light emitting device 5030, for example, if the wiring layer 5031d is the anode side of the LED element 5032, the plus side of a DC power supply (not shown) is connected to the wiring layer 5031d, and the minus side is connected to the wiring layer 5031e. By this energization, the LED element 5032 emits light. The light is emitted from the upper surface of the LED element 5032 in the figure, most of the light is emitted to the outside through the sealing member 5034, and the other part is internally reflected in the sealing member 5034, and then the sealing member 5034. I go out.

  According to the fourteenth embodiment described above, since the buffer layer 5033 is provided around the LED element 5032 of the light emitting device 5030 on which the LED element 5032 is mounted face up, the wires 5035a and 5035b are deformed when the glass material is sealed. In addition to preventing crushing and shorting between the electrodes, it is possible to prevent the occurrence of cracks in the vicinity of the LED element 5012 due to the high thermal expansion of the sealing member 5034 as in the first embodiment. It becomes possible to do.

  For example, when the buffer layer 5033 is not provided, if the temperature after glass sealing is set high, the LED element is damaged, and thus there is a temperature restriction, and the glass sealing is performed in a state where the glass has a high viscosity. It is inevitable that an external force is applied to the wires 5035a and 5035b, and it is difficult to maintain the wires 5035a and 5035b in a desired posture. For example, when the wire 5035a is crushed by a pressure press of a glass material, there is a problem that the wiring layers 5031b and 5031c are short-circuited. In this case, not only light emission but also a power supply side (not shown) is affected. Incidentally, such a problem does not occur in the resin material.

  In the face-up type LED element, the presence of a wire that is a metal member on the upper surface itself becomes a buffer material. However, the problem is that it collapses and causes an electrical short. For this reason, it is important that there is an electrical short-circuit preventing element for preventing crushing or the like even without a cushioning element.

  FIG. 87 is a cross-sectional view showing a light emitting device according to the fifteenth embodiment of the present invention. In the light emitting device 5040, a submount 5043 on which the LED element 5041 is mounted is mounted on the lead portions 5044a and 5044b. In FIG. 87, the submount is illustrated in a non-cross-sectional state.

  The light emitting device 5040 includes an LED element 5041 having a bump 5042 provided on the mounting surface, a submount 5043 on which the LED element 5041 is mounted, lead portions 5044a and 5044b as power supply members on which the submount 5043 is mounted, It has a buffer layer 5045 provided so as to cover the exposed surface of the LED element 5041, and a sealing member 5046 made of translucent glass that seals the buffer layer 5045 and its periphery.

  The submount 5043 is made of, for example, high thermal conductivity AlN (aluminum nitride), and electrodes 5043a connected to the bumps 5042 are formed on the mounting surface side of the LED element 5041. The opposite surface (on the lead frame side) On the surface), electrodes 5043b for connection to the pair of lead portions 5044a and 5044b are formed. A through hole 5043c is provided in the submount 5043 to connect the electrode 5043a and the electrode 5043b.

  The lead portions 5044a and 5044b are formed as a part of the lead frame so as to face each other with a predetermined gap inside the belt-like portions on both sides, and a pair is assigned to one LED element. A part of the tip portion of each of the lead portions 5044a and 5044b is made thin so that a step is generated, and the submount 5043 is placed on the step portion.

  The buffer layer 5045 is provided based on the same material and processing as the buffer layers 5013, 5021, and 5033 described in the other embodiments.

  The sealing member 5046 is made of a glass material having translucency and a low melting point as in the other embodiments described above.

  In the light emitting device 5040, if the lead portion 5044a is a positive (+) power supply terminal, the current supplied to the lead portion 5044a is one of the lead portion 5044a and the electrode 5043b, one of the through hole 5043c, and the electrode 5043a. On the other hand, the current that flows to the anode of the LED element 5041 through one of the bumps 42 and further from the cathode of the LED element 41 is supplied to the other of the bumps 5042, the other of the electrodes 5043a, the other of the through holes 5043c, and the electrodes 5043b. The LED element 5041 emits light by flowing to the lead portion 5044b through the other.

  Hereinafter, assembly of the light emitting device 5040 will be described.

  First, a submount 5043 in which electrodes 5043a and 5043b and through holes 5043c are formed in advance is prepared, and an LED element 5041 is mounted at a predetermined position on the submount 5043 through bumps 5042. As a result, the LED element 5041 is electrically connected and mechanically fixed.

  Next, the LED elements 5041 mounted on the submount 5043 are arranged in the recesses at the tips of the lead portions 5044a and 5044b so that the energization directions are matched.

  Next, a liquid silicon material is dropped to a predetermined thickness so as to cover the periphery of the LED element 5041.

  Next, the LED element 5032, the submount 5043, and the lead portions 5044 a and 5044 b are placed in a temperature atmosphere of about 150 ° C., and primary curing is performed to form a buffer layer 5045 around the LED element 5032.

  Next, a glass sheet for forming the sealing member 5045 is disposed above and below the LED element 5041, and a mold is disposed above and below the LED element 5041, respectively.

  Next, the glass sheet is formed into a predetermined shape by performing pressure pressing with a mold in a predetermined temperature atmosphere. Thus, the light emitting device 5040 is completed. Eventually, the other ends of the lead portions 5044a and 5044b are separated from the lead frame and individualized into individual light emitting devices 5040.

  According to the fifteenth embodiment described above, when the LED element 5041 mounted on the high thermal conductivity submount 5043 is sealed with a glass material, the buffer layer 5045 causes the LED element 5041 and the sub It is possible to prevent cracks and peeling from occurring around the mount 5043.

  Note that in the light emitting device 5040, a phosphor may be mixed in the buffer layer 5045. In this case, wavelength conversion based on a mixture of excitation light emitted from the phosphor excited by the emitted light of the LED element 5041 and emitted light of the LED element 5041 is performed. As the phosphor, for example, Ce (cerium): YAG (yttrium, aluminum, garnet) that is excited by blue light emitted from the LED element 5041 to emit yellow light can be used.

  FIG. 88 is a sectional view showing a light emitting apparatus according to the sixteenth embodiment of the invention. This light emitting device 5050 has a configuration in which a heat radiating member is attached to the light emitting device 5040 of FIG. In other words, the heat dissipating member 5051 using a metal material having excellent thermal conductivity such as copper is attached to the lower part of the submount 5052 made of AlN or the like.

  The light emitting device 5050 includes a heat dissipating member 5051 functioning as a heat dissipator, a submount 5052 mounted on the heat dissipating member 5051, and lead portions 5053a and 5053b having tip portions placed on stepped portions at both ends of the submount 5052. A pair of bumps 5042 for supplying power on the lower surface, an LED element 5041 mounted on the submount 5052, a buffer layer 5054 provided to cover the exposed surface of the LED element 5041, a buffer layer 5054, and And a sealing member 5055 made of transparent glass having a low melting point for sealing the periphery.

  The submount 5052 is processed to be thin so that a predetermined range at both ends generates a step, and the leading ends of the lead portions 5053a and 5053b are placed on the thin portion, and the leading ends thereof are the side surfaces of the wiring patterns 5052a and 5052b. Connected by soldering or the like. Furthermore, the submount 5052 is provided with wiring patterns 5052a and 5052b that contact the pair of bumps 5042 from the upper surface to the side surface.

  The buffer layer 5054 has a function of wavelength conversion as well as stress buffering by using a porous phosphor-containing SiO2 in which a phosphor is mixed with Si-based alkoxide and sintered.

  As described in the fifteenth embodiment, Ce (cerium): YAG (yttrium, aluminum, garnet) or the like can be used as the phosphor.

  Since the assembly of the light emitting device 5050 in the sixteenth embodiment conforms to the fifteenth embodiment, the redundant description is omitted here, but the part above the submount 5052 in FIG. 88 is completed first. Thereafter, the heat radiating member 5051 may be attached to the lower surface by bonding or the like.

  According to the above sixteenth embodiment, the following effects can be obtained.

(1) Since the heat dissipating member 5051 for promoting heat dissipating is provided at the lower part of the submount 5052, the heat generated when the LED element 5041 is turned on can be efficiently dissipated to the outside, and the thermal expansion accompanying the temperature rise of the sealing member 5055 or the like made of glass -The occurrence of cracks can be prevented by suppressing the occurrence of heat shrinkage.

(2) By mixing the phosphor in the buffer layer 5054, wavelength conversion can be performed and light extraction efficiency can be improved.

  In each of the above-described embodiments, reflection surfaces may be formed on the surfaces of the substrate portions 5011 and 5031 and the lead portions 5044a, 5044b, 5053a, and 5053b to increase the light emission efficiency.

  Further, the phosphor may be partially mixed on the LED elements 5012 and 5032 in the sealing members 5014 and 5034, or the wavelength converting phosphor may be mixed in the buffer layers 5013 and 5033.

  In addition, when a TiO 2 ceramic material is used for the buffer layer 5054, the refractive index has a large value of 2.4, so that the light extraction efficiency from the LED element 5041 can be increased.

  Further, in each of the above-described embodiments, the number of LED elements disposed in one sealing member is one, but a multi-light-emitting type light emitting device having two or more LED elements is provided. You can also The plurality of LED elements to be mounted may have a configuration in which a plurality of LED elements having different emission colors are provided or a configuration in which a plurality of LED elements having the same emission color are provided. Furthermore, as a drive form of the LED element, all of the plurality of LED elements may be connected in parallel or in parallel in units of groups, may be connected in series in a plurality of units, or all may be connected in series.

  Further, the sealing member 5014 has been described as “K-PSK100” manufactured by Sumita Optical Glass Co., Ltd., but is not limited thereto, and may be glass that is softened at a temperature at which sealing processing can be performed without causing thermal damage to the light emitting element. Other than that.

  In addition, the shape of the sealing members 5014, 5034, 5046, and 5055 has a hemispherical configuration, but the present invention is not limited to the illustrated shape, and a shape that does not have a lens portion, a polygon, or a cylinder It can be in any shape such as shape.

  Further, the molding of the sealing members 5014, 5034, 5046, and 5055 is not limited to a molding method using a pressure press using a glass sheet. For example, molten glass is supplied near the LED element to form a gold Other sealing methods such as thermoforming with a mold may be used.

  Further, the buffer layer 5054 is not limited to a porous material, and has a buffering effect such as brittle stress absorption, a thermal expansion coefficient intermediate between the LED element and the sealing glass, and has insulation and heat resistance. If it is good.

  FIG. 89 is a cross-sectional view showing a configuration of a light emitting device according to a seventeenth embodiment of the present invention. The light emitting device 6010 includes a substrate portion 6011 as a power supply member, bumps 6012a and 6012b made of at least a pair of Au for supplying power, and LED elements 6012 mounted on the upper surface of the substrate portion 6011, and LED elements 6012. An insulating layer 6013 filled between the lower surface and the substrate portion 6011 and a sealing member 6014 formed so as to cover the upper surfaces of the LED element 6012 and the substrate portion 6011 are configured.

  The substrate portion 6011 includes a ceramic substrate 6011a, wiring layers 6011b, 6011c, 6011d, and 6011e formed in a predetermined pattern on the upper surface of the ceramic substrate 6011a, and a wiring layer 6011f formed in a predetermined pattern on the lower surface of the ceramic substrate 6011a. , 6011g, an Au plated film 6011h coated on the surface of the wiring layer 6011c, an Au plated film 6011i coated on the surface of the wiring layer 6011d, an Au plated film 6011j coated on the surface of the wiring layer 6011f, An Au plated film 6011k coated on the surface of the layer 6011g, a through hole 611l for connecting the wiring layer 6011b and the wiring layer 6011f, and a through hole 6011m for connecting the wiring layer 6011d and the wiring layer 6011g are provided.

As the ceramic substrate 6011a, for example, a glass-containing Al ₂ O ₃ material (thermal expansion coefficient: 13.2 × 10 ⁻⁶ / ° C.) is used. The wiring layers 6011c, 6011d, 6011f, and 6011g function as electrodes for supplying power. Further, the Au plating films 6011h, 6011i, 6011j, and 6011k are provided in order to improve connectivity, conductivity, and corrosion resistance. Note that before the LED element 6012 is mounted on the substrate portion 6011, the wiring layers 6011b to 6011g, the Au plating films 6011h, 6011i, 6011j, and 6011k, and the through holes 6011l and 6011m are formed in the ceramic substrate 6011a in advance.

  The LED element 6012 is configured using a semiconductor such as GaN or AlInGaP, for example, and the chip size is 0.3 × 0.3 mm (standard size), 1 × 1 mm (large size), or the like. The LED element 6012 has power supply electrodes 6012 a and 6012 b on the lower surface, and the electrodes 6012 a and 6012 b are soldered onto a predetermined wiring layer of the substrate portion 6011.

The insulating layer 6013 is formed of a silicon-based material or an insulating material containing diamond, BN, SiC, or AlN powder. When a silicon resin is used as the silicon-based material, the high temperature associated with the sealing of the sealing member 6014 causes the chemical bond to break, so that it becomes SiO ₂ and functions as an insulator having heat resistance. Further, instead of SiO ₂ formed of silicon resin, ceramic formed of Si-based or Ti-based alkoxide can be used. Diamond has high thermal conductivity. BN, SiC, and AlN are inferior in thermal conductivity to diamond but are inexpensive. Further, diamond, BN, and SiC are transparent or white and have a feature of little light absorption.

The sealing member 6014 is formed using a glass material having translucency and a low melting point. For example, “K-PSK100” (thermal expansion coefficient: 11.4 × 10 ⁻ made by Sumita Optical Glass Co., Ltd.). ⁶ / ° C.). In the experiments by the inventors, in order to obtain a good bonding between the ceramic and the glass, the ceramic substrate 6011a and the sealing member 6014 are substantially equal in thermal expansion coefficient (ratio of thermal expansion coefficient difference is within 15%). Here, the ratio of the thermal expansion coefficients is 0.86.

  Hereinafter, assembly of the light emitting device 6010 will be described.

  After positioning the Au bumps 6012a and 6012b on the wiring layers 6011c and 6011d and disposing the LED element 6012 on the substrate portion 6011, an insulating layer 6013 is formed by dropping, filling or the like.

Next, a sealing member 6014 made of a glass material is sealed on the exposed surface of the LED element 6012 and the insulating layer 6013 and the exposed surface of the substrate portion 6011. A mold is used for sealing the sealing member 6014, and it is formed into a semicircular shape as shown in FIG. 89 by a predetermined temperature atmosphere and pressure press. At the time of sealing, the silicon material as the insulating layer 6013 is changed to SiO ₂ , and the lower surface of the LED element 6012 and the bumps 6012a and 6012b are fixed. Therefore, deformation of the bumps 6012a and 6012b, a short circuit between the bumps, and the like Is avoided. Thus, the light emitting device 6010 is completed.

  In the light emitting device 6010, for example, if the wiring layer 6011f is on the anode side of the LED element 6012, the plus side of a DC power source (not shown) is connected to the wiring layer 6011f, and the minus side is connected to the wiring layer 6011g. . When a forward voltage is applied to the LED element 6012 via a bump 6002 electrically connected to a p-type electrode and an n-type electrode (not shown), hole and electron carrier recombination occurs in the active layer of the LED element 6012. Is generated to emit light, and output light is emitted to the outside of the LED element 6012. Most of this light passes through the sealing member 6014 and exits from the sealing member 6014, and part of the light is reflected from the inner surface and exits from the sealing member 6014.

  According to the seventeenth embodiment described above, the following effects are obtained.

(1) By sealing the whole with the sealing member 6014 made of a glass material, it is possible to reduce attenuation of light due to yellowing or coloring, which is a problem in resin sealing.

(2) Since the insulating layer 13 having heat resistance is provided under the LED element 6012, the sealing member 6014 presses the bumps 6012a and 6012b with high heat when the sealing member 14 is sealed. Will no longer cause damage. That is, it is possible to prevent the bumps 6012a and 6012b from being deformed or damaged due to the high heat and high pressure of the sealing member 14 to cause a short circuit between the bumps.

(3) When an insulating material containing diamond, BN, SiC, or AlN powder is used, an effect of radiating the heat generated by the LED element 6012 can be expected, so that heat dissipation can be improved.

  FIG. 90 is a cross-sectional view showing the configuration of the light emitting device according to the eighteenth embodiment. The light emitting device 6020 is a metal lead type mounted on a lead frame using a submount 6022. The LED element 6021 having bumps 6021a and 6021b provided on the mounting surface, and the submount on which the LED element 6021 is mounted. 6022, lead portions 6023a and 6023b as power supply members on which the submount 6022 is mounted, an insulating layer 6024 filled between the upper surfaces of the lead portions 6023a and 6023b and the lower surface of the LED element 6021, and an insulating layer 6024 And a sealing member 6025 made of translucent glass for sealing the leading ends of the lead portions 6023a and 6023b including the surface of the LED element 6021.

  The submount 6022 is made of, for example, high thermal conductivity AlN (aluminum nitride), and the wiring layer 6022a connected to one of the bumps 6021a is formed in a U shape over the upper surface, the side surface, and the lower surface. On the opposite side, a wiring layer 6022b connected to the bump 6021b is formed so as to form a U shape over the upper surface, the side surface, and the lower surface.

  Further, the submount 6022 can incorporate a circuit such as a Zener diode for preventing element destruction as needed. Further, instead of the wiring layers 6022a and 6022b, a wiring means by a combination of electrodes provided on the upper and lower surfaces and through-holes communicating the upper and lower electrodes may be used.

  The lead parts 6023a and 6023b are made of copper or iron metal, and are formed as a part of a lead frame (not shown) so as to face the inner side of the belt-like parts on both sides with a predetermined gap. On the other hand, a pair is assigned. A part of the tip portion of each of the lead portions 6023a and 6023b is made thin so that a step is formed, and the submount 6022 is placed on the step portion.

As the insulating layer 6024, a silicon material or an insulating material containing diamond or AlN powder can be used as in the insulating layer 6013 in the seventeenth embodiment. The insulating layer 6013 includes a generation process in which a chemical bond is broken when the sealing member 6025 is sealed and the silicon material becomes SiO ₂ , and a heat dissipation effect when an insulating material containing diamond, BN, SiC, or AlN powder is used. It is the same as the case of.

  As the sealing member 6025, a glass material having translucency and a low melting point is used as in the above-described embodiment.

  In the light emitting device 6020, if the lead portion 6023a is a positive (+) power supply terminal, the current supplied to the lead portion 6023a passes through the lead portion 6023a, the wiring layer 6022a, and the bump 6021a, and the anode of the LED element 6021. Furthermore, the current from the cathode of the LED element 21 flows to the lead portion 6023b through the bump 6021b and the wiring layer 6022b, whereby the LED element 6021 emits light.

  Hereinafter, the assembly of the light emitting device 6020 will be described.

  First, a submount 6022 in which wiring layers 6022a and 6022b are formed in advance is prepared. Bumps 6021a and 6021b are formed at predetermined positions on the submount 6022, LED elements 6021 are mounted thereon, the bumps 6021a and the wiring layers 6022a, and the bumps 6021b and the wiring layers 6022b are electrically connected and mechanically. Fix it.

  Next, the LED elements 6021 mounted on the submount 6022 are arranged in the recesses at the tips of the lead portions 6023a and 6023b so that the energization directions are matched. In addition, after mounting the LED element 21 on the submount 6022, the order in which the submount 6022 is mounted on the lead portions 6023a and 6023b may be used.

Next, a silicone material as the insulating layer 6024 is filled between the lower surface of the LED element 6021 and the upper surface of the submount 6022 (this filling may be performed before the submount 22 is mounted on the lead portions 6023a and 6023b). good.). The glass sheet (not shown) for carrying in this state in a metal mold | die and forming the sealing member 25 is arrange | positioned above and the downward direction of the LED element 6021, and hemispherical by predetermined temperature and pressure press Mold. At the time of sealing, the silicone material is converted to SiO ₂ to form the insulating layer 6024, and the lower surface of the LED element 6021 and the bumps 6012a and 6012b are fixed. Thus, the light emitting device 6020 is completed. Finally, the other ends of the lead portions 6023a and 6023b are separated from a lead frame (not shown) to be individualized into individual light emitting devices 6020.

  According to the eighteenth embodiment described above, by using the lead portions 6023a and 6023b having excellent adhesion to the glass material and providing the insulating layer 6024 below the LED element 6021, the sealing member 6025 is sealed. In some cases, the sealing member 6025 does not damage the LED element 6021, so that deformation, movement, short circuit, or the like can be prevented from occurring in the bumps 6021 a and 6021 b. Furthermore, by sealing the whole with the sealing member 6025 made of a glass material, it is possible to prevent the light from being attenuated due to yellowing or coloring as in the case where the sealing member is a resin material.

  FIG. 91 is a cross-sectional view showing a light emitting device according to a nineteenth embodiment. This light emitting device 6030 is a metal lead type mounted on a lead frame using a submount, as in the eighteenth embodiment. Here, as in FIG. 90, only the configuration of the main part is illustrated, and the submount 6032 is illustrated in a non-cross-sectional state. This embodiment differs from the eighteenth embodiment in the structure of the submount and the configuration and formation range of the insulating layer.

  The light emitting device 30 includes an LED element 6031 provided with bumps 6031a and 6031b on the mounting surface, a submount 6032 on which the LED element 6031 is mounted, and a power supply member on which the submount 6032 is mounted on the tip. Lead portions 6033a and 6033b are mixed with phosphor 6034a and filled or dropped so as to cover the entire surface of the LED element 6031. Lead ends 6033a and 6033b including the upper surface of the LED element 6031 And a sealing member 6035 made of translucent glass.

  The submount 6032 is made of, for example, high thermal conductivity AlN (aluminum nitride), and electrodes 6032a and 6032b connected to the bumps 6031a and 6031b are formed on the mounting surface side of the LED element 6031. On the surface on the frame side, electrodes 6032c and 6032d for connection to the pair of lead portions 6033a and 6033b are formed. Through holes 6032e and 6032f are provided in the submount 6032 to connect the electrodes 6032a and 6032c, and the electrodes 6032c and 6032d.

  The lead parts 6033a and 6033b are made of copper or iron metal, and are formed as a part of a lead frame (not shown) so as to be opposed to the inner side of the belt-like parts on both sides with a predetermined gap. A pair is assigned. A part of the tip portion of each of the lead portions 6033a and 6033b is made thin so that a step is generated, and the submount 6032 is placed on the step portion.

  The insulating layer 6034 is mainly made of a silicone material, and a phosphor 6034a is mixed therewith. Note that the process of generating a SiO2 by breaking the chemical bond of the silicone material when the sealing member 6025 is sealed, the heat dissipation effect when using an insulating material containing diamond or AlN powder, and the like are the same as in the case of the insulating layer 6013. It is the same.

  As the phosphor 6034a, for example, when the LED element 6021 emits blue light, Ce (cerium): YAG (yttrium, aluminum, garnet) having a characteristic of emitting yellow light when excited by the blue light is used.

  The sealing member 6035 is made of a glass material having translucency and a low melting point as in the above-described embodiments.

  In the light-emitting device 6030, if the lead portion 6033a is a positive (+) power supply terminal, the current supplied to the lead portion 6033a causes the lead portion 6033a, the electrode 6032c, the through hole 6032e, the electrode 6032a, and the bump 6031a. Then, the current that flows to the anode of the LED element 6031 and the current that has exited the cathode of the LED element 6031 flows to the lead portion 6033b through the bump 6031b, the electrode 6032b, the through hole 6032f, and the electrode 6032d, whereby the LED element 6031 emits light. To do.

  Hereinafter, assembly of the light-emitting device 6030 will be described.

  First, a submount 6032 in which electrodes 6032a to 6032d and through holes 6032e and 6032f are formed in advance is prepared. Bumps 6031a and 6031b are formed at predetermined positions on the submount 6032, and the LED element 6031 is mounted. Accordingly, the LED element 6031 is electrically connected to the electrodes 6032a and 6032b via the bumps 6031a and 6031b, and is mechanically fixed at the same time.

  Next, the LED elements 6031 mounted on the submount 6032 are arranged in the recesses at the tips of the lead portions 6033a and 6033b so that the energization directions are matched. Alternatively, the procedure of mounting the LED element 6031 on the submount 6032 after mounting the submount 6032 on the lead portions 6033a and 6033b may be used.

  Next, the insulating layer 6034 mixed with the phosphor 6034 a is dropped or filled so as to cover the upper surface, the side surface, and the upper surface of the submount 6032.

  Next, the glass sheet (not shown) for carrying in a metal mold | die and forming the sealing member 35 is arrange | positioned above and the downward direction of the LED element 6031, and hemisphere by pressure press under predetermined temperature The light-emitting device 6030 is completed when it is molded into a shape. At the time of sealing, the silicon material is changed to SiO 2 to form the insulating layer 6034, and the lower surface of the LED element 6031 and the bumps 6031a and 6031b are fixed, so that the deformation of the bump 6012a, the short circuit between the bumps, and the like are avoided. . Eventually, the other ends of the lead portions 6033a and 6033b are separated from the lead frame and individualized into individual light emitting devices.

  According to the nineteenth embodiment described above, the following effects are obtained.

(1) The provision of the insulating layer 6034 prevents the sealing member 6035 from damaging the LED element 6031 when the sealing member 6035 is sealed, so that the bumps 6031a and 6031b are deformed, moved, short-circuited, and the like. It can be prevented from occurring.

(2) Since the phosphor 6034a is mixed in the insulating layer 6034, light absorption by the electrode on the lead portion (or the wiring layer on the submount) can be reduced. Usually, Au plating is given to an electrode and a wiring layer. This Au plating has a high absorption rate of blue or violet light, but by providing an insulating layer 6034 containing a phosphor, the wavelength of light emitted from the side surface of the LED element can be converted. Absorption can be prevented.

(3) Wavelength conversion can also be performed on light emitted from the upper surface of the LED element 6031.

  Further, since the whole is sealed with the sealing member 6035 made of a glass material, it is possible to prevent light attenuation due to yellowing or coloring as in the case where the sealing member is a resin material.

  Instead of this, the submount 6022 having the “U” -shaped wiring layers 6022 a and 6022 b shown in FIG. 90 may be used. Conversely, the submount 6032 shown in FIG. 91 may be used instead of the submount 6022 of FIG.

  FIG. 92 is a plan view showing a bump forming surface of a standard size LED element. This LED element 6031 is a 0.3 mm square LED element, and is mounted on the small pattern 6042 on which the pump 6041 connected to the n electrode is mounted, the large pattern 6043 connected to the p electrode, and the large pattern 6043. Pumps 6044a and 6044b are provided. As the LED element 6031 becomes a high output type, a larger current flows. Therefore, the number of pumps on the p-electrode side is made plural so that a large current capacity can be accommodated.

  FIG. 93 is a plan view showing a bump forming surface of a large-size LED element. The LED element 6031 is a 1 mm square LED element, and includes a wiring pattern 6054 provided with bumps 6052a and 6052b and a wiring pattern 6055 provided with bumps 6053a to 6053p. Large-size LED elements have a larger light emitting area than the standard size, and thus a larger current flows. Therefore, in order to achieve uniform light emission on the light emitting surface, a plurality of bumps serving as electrode contacts are provided in accordance with the shape areas of the wiring patterns 6054 and 6055.

  As shown in FIGS. 92 and 93, in an LED element that is electrically connected through bumps, the bumps are easily crushed by the temperature and pressure at the time of glass sealing. In particular, as shown in FIG. 93, in the case of having a large number of bumps 6053a to 6053p, the distance between the bumps approaches, so that if the bumps are deformed, a short circuit is more likely to occur. In contrast to such an LED element 6031, the insulating layer 6034 covers the bump forming surface to ensure insulation between the bumps, and withstands the pressure during glass sealing, thereby suppressing the deformation of the bumps 6053a to 6053p. As a result, the sealing member 6035 can be formed from a glass material.

  In each of the embodiments described above, the bumps 6012a and 6012b made of Au have been described. However, the bumps are not limited to Au, and may be bumps formed of solder. Moreover, not only a bump but solder plating formed on an electrode may be used. “K-PSK100” manufactured by Sumita Optical Glass Co., Ltd. is crushed even at Au bumps due to the sealing process at a temperature exceeding 400 ° C. and the glass viscosity at the time of processing is high. On the other hand, the hybrid low melting point glass with inorganic / organic mixture can be sealed at a lower temperature, but if the melting point is lower than the sealing temperature, such as a solder bump, a short circuit between the electrodes occurs even at a small pressure. . The present invention is effective for this.

  Further, in each of the above-described embodiments, a phosphor layer for wavelength conversion can be formed on the LED elements 6012 and 6032 in the sealing members 6014, 6025, and 6035.

  Further, in each of the above-described embodiments, the number of LED elements disposed in one sealing member is one, but a multi-light-emitting type light emitting device having two or more LED elements is provided. You can also The plurality of LED elements to be mounted may have a configuration in which a plurality of LED elements having different emission colors are provided or a configuration in which a plurality of LED elements having the same emission color are provided. Furthermore, as a drive form of the LED element, all of the plurality of LED elements may be connected in parallel or in parallel in units of groups, may be connected in series in a plurality of units, or all may be connected in series.

  Moreover, although the dome-shaped structure was shown as the shape of the sealing members 6014, 6025, and 6035, the present invention is not limited to the illustrated shape, and a shape without a lens portion, a polygon, a cylinder, or the like. , Can be any shape.

  Furthermore, the molding of the sealing members 6014, 6025, and 6035 is not limited to a molding method using a pressure press using a glass sheet, and other sealing methods may be used.

  FIG. 94 is a cross-sectional view showing the structure of the light emitting device according to the twentieth embodiment of the present invention. Usually, the lead frame is provided with a belt-like portion connecting the outer side of each lead portion on both sides, but the illustration is omitted here. A plurality of LED elements are usually mounted on the lead frame, but only one of them is shown here. Further, in FIG. 94, the submount is shown in a non-cross-sectional state.

The light-emitting device 7010 is a metal lead mounting type, and a GaN-based LED element 7001 (thermal expansion coefficient: 4.5 to ⁶ × 10 ⁻⁶ / ° C.) that is flip-chip bonded to the mounting surface via bumps 7002; A submount 7003 on which the LED element 7001 is mounted, and a lead portion made of Cu as a power supply member on which the submount 3 is mounted (thermal expansion coefficient 15 to 17 × 10 ⁻⁶ / ° C., thermal conductivity 400 W · m ⁻¹ K- ¹ ) 7004A and 7004B, and a transparent glass sealing member 7005 that seals the periphery of the LED element 7001 as a center.

For example, AlN (aluminum nitride: thermal expansion coefficient 5 × 10 ⁻⁶ / ° C., thermal conductivity 180 W · m ⁻¹ · K ⁻¹ ) is used for the submount 7003, and electrodes 7031A and 7031B connected to the bumps 7002 are used. Are formed on the mounting surface side of the LED element 1, and electrodes 7032A and 7032B for connection to a pair of lead portions 7004A and 7004B are formed on the opposite surface (the surface on the lead frame side). The mounting surface of the LED element 7001 on the upper surface of the lead portions 7004A and 7004B is processed one step lower than the other portions, and a submount 7003 is disposed in the recessed portion. A through hole 7033 is provided in the submount 7003 to connect the electrodes 7031A and 7031B and the electrodes 7032A and 7032B.

  The sealing member 7005 is heat-sealed with a sheet-like glass that is transparent, has a low melting point, and has a thermal expansion coefficient close to that of the lead portions 7004A and 7004B (or within a predetermined thermal expansion coefficient difference). Thus, a translucent glass portion that seals part of the LED element 7001, the sub-mound 7003, and the lead portions 7004A and 7004B is formed.

  If the lead portion 7004A is a positive (+) power supply terminal, the current supplied to the lead portion 7004A is one of the lead portion 7004A, the electrodes 7032A and 7032B, one of the via holes 7033, one of the electrodes 7031A and 7031B, and The current flowing to the anode of the LED element 7001 through one of the bumps 7002 and further from the cathode of the LED element 7001 is caused by the other of the pump 7002, the other of the electrodes 7031A and 7031B, the other of the via hole 7033, and the electrodes 7032A and 7032B. The LED element 7001 emits light by flowing to the lead portion 704B through the other.

  FIG. 95 is a plan view showing a state in which the submount is mounted on the lead frame. The submount 7003 has an LED element 7001 mounted at the center. The lead portions 7004A and 7004B are formed as a part of the lead frame so as to face each other with a predetermined gap inside the belt-like portions on both sides, and a pair is assigned to one LED element.

  FIG. 96 is a diagram showing a state immediately before performing glass sealing using a mold. In the same figure, the state cut | disconnected by the AA part of FIG. 95 is shown. Hereinafter, a method for manufacturing the light emitting device 7010 will be described with reference to FIGS. 94 to 96.

  First, the LED element 7001 provided with the bump 7002 is positioned on the submount 7003 and reflowed to electrically connect the bump 7002 and the electrode 7031 and mechanically fix them.

  Next, the LED element 7001 mounted on the submount 7003 is disposed in the recesses at the tip portions of the lead portions 7004A and 7004B so that the energization direction is matched. Note that the submount 7003 uses electrodes 7031A and 7031B, electrodes 7032A and 7032B, and via holes 7033 already formed.

  Next, the lead frame 7006 is carried into a mold, and glass sheets 7007 and 7008 are disposed above and below the LED element 7001. The glass sheets 7007 and 7008 are for forming the sealing member 7005 and have a size capable of simultaneously sealing a plurality of LED elements 7001.

  Next, the upper mold 7011 is disposed so as to cover the glass sheet 7007, and the lower mold 7012 is disposed so as to cover the glass sheet 7008. Next, in a vacuum atmosphere, the glass sheets 7007 and 7008 are heated to 450 ° C. and softened, and the upper mold 7011 and the lower mold 7012 are moved in the direction of the arrows in FIG. When the pressure is applied, the glass sheets 7007 and 7008 are formed in a dome shape like a sealing member 7005 shown in FIG. 94 along the recess 7011A of the upper mold 7011 and the recess 7012A of the lower mold 7012.

  Next, unnecessary portions such as strips of the lead frame 7004 are removed to separate each of the light emitting devices 7010 from the lead frame 7004.

  When a forward voltage is applied to the light emitting device 7010 through the bump 7002 electrically connected to the pad electrode 7108 and the n-type electrode 7109, hole and electron carrier recombination occurs in the active layer of the LED element 7001. The light is emitted and the output light is radiated to the outside of the LED element 7001 through the sapphire substrate 7101. This output light passes through the sealing member 7005 and is emitted to the outside.

  According to the twentieth embodiment described above, the following effects are obtained.

(1) Since the LED element 7001 having a small coefficient of thermal expansion is sealed so as to be entirely surrounded by a glass material sealing material 7005 having a large coefficient of thermal expansion, the internal stress generated based on the difference in the coefficient of thermal expansion is the LED. Adjustment is made so as to go to the center of the element 7001. That is, even if an internal stress based on the thermal shrinkage of the glass material occurs after the glass processing, the internal stress becomes a compressive force toward the central direction of the LED element 1, so that the glass material having strength against compression is destroyed. A glass sealing structure can be realized.

(2) Since the LED element 7001 having a low thermal expansion coefficient is mounted on the submount 7003 having a low thermal expansion coefficient and mounted on the lead portions 7004A and 7004B having a high thermal expansion coefficient, the sealing member 7005 is formed. The glass material that is used is required to adhere to both the LED element 7001 having a low thermal expansion coefficient and the lead portions 7004A and 7004B having a high thermal expansion coefficient. It is preferable to select and seal. Since lead portions 7004A and 7004B formed of a soft metal such as Cu are richer in elasticity than glass materials, the difference in coefficient of thermal expansion between LED element 1 and submount 3 is 150% to 400%. If it is a range, the stress based on a thermal contraction difference can be structurally absorbed, maintaining favorable adhesiveness with a glass material. Therefore, even when the lead portions 7004A and 7004B are sandwiched between glass materials and sealed, defects such as cracks do not occur.

(3) Even when the input power to the LED element 7001 is large and the heat generation temperature is high, the heat generated by the LED element 7001 can be dissipated to the outside, and a decrease in luminous efficiency can be effectively prevented. In particular, this can be realized by setting the thermal conductivity of the submount 7003 and the lead portions 7004A and 7004B to 100 W · m ⁻¹ · K ⁻¹ or more.

(4) Since the sealing member 7005 is formed using the low melting point glass sheets 7007 and 7008, the time required for heating can be shortened and a simple heating apparatus can be used, and the glass sealing process is facilitated.

(5) Since defects such as cracks are less likely to occur during processing, high sealing performance with glass can be stably maintained over a long period of time, and light emission characteristics do not deteriorate even under water or in high humidity conditions, and it is excellent over a long period of time. Demonstrate durability.

  In the first embodiment, the configuration using the GaN-based LED element 7001 as the LED element 7001 has been described. However, the LED element is not limited to the GaN-based element, and other LED elements may be used. Is possible.

In the above-described embodiment, the configuration in which the submount 7003 made of AlN is mounted on the lead portions 7004A and 7004B made of Cu has been described. For example, the lead portion made of brass (thermal conductivity 106 W · m ⁻¹ · configuration such to K ^-1) for mounting the submount 3 made of Si (thermal conductivity 170W · ^{m -1} · ^K -1) is also possible.

  Further, the sealing member 7005 is not limited to a method of forming a plurality of LED elements 7001 and submounts 7003 in a lump using a sheet-like glass, and a molten glass material is used for LED. It may be formed by supplying it to the periphery of the element 7001 and the submount 7003 and performing hot press molding with the upper mold 7011 and the lower mold 7012. Further, the glass material to be used is not limited to being transparent as long as it has optical transparency, and may be colored.

  Further, the sealing member 7005 can have various shapes depending on specifications and the like. For example, in addition to a round shape, an oval shape, a square shape, and the like, shapes with a lens and without a lens are possible.

  In the twentieth embodiment described above, the flip chip type light emitting device using the metal lead as the power feeding member has been described. However, the present invention can be applied to other types of light emitting devices. For example, the present invention can be applied to a face-up (FU) type light emitting device using wire bonding.

  FIG. 97 is a cross-sectional view showing a modification of the light emitting apparatus according to the twentieth embodiment. The light emitting device 7010 has a configuration in which an inclined portion 7003A is provided by removing a corner portion of the submount 7003 to prevent cracks due to thermal expansion / contraction of the sealing member 7005. By using the submount 3 as described above, it is possible to realize a glass-sealed light emitting device 7010 in which cracks are hardly generated in addition to the preferable effects of the twentieth embodiment.

  FIG. 98 is a cross-sectional view showing a face-up light emitting device according to the twenty-first embodiment of the present invention. The light emitting device 7040 is mounted on the top surface of the leading end portion of the lead portion 7004A via an adhesive or the like as lead portions 7004A and 7004B as power supply members arranged horizontally and in a straight line with the tip portion spaced apart. GaN-based LED element 7041, wire 7042 for connecting two electrodes (not shown) on LED element 7041 and lead portions 7004A and 7004B, and tip portions of LED element 7041 and lead portions 7004A and 7004B are sealed. And a sealing member 7005 made of a glass material.

  The sealing member 7005 is made of a glass material having transparency, a low melting point, and a coefficient of thermal expansion within a predetermined value. In particular, in the face-up type, by using a wire, the wire 7042 and the wire connection portion 7042A softened by heating are easily crushed by pressurization during glass sealing, so that a short circuit or the like is likely to occur. For this reason, it is desirable to use a glass material having a low melting point as much as possible.

  Hereinafter, assembly of the light emitting device 7040 will be described.

  First, the LED element 7041 is mounted on the top surface of the leading end of the lead portion 7004A in a state before the lead frame is separated. Next, one electrode on the upper surface of the LED element 7041 and the upper surface of the lead portion 7004A are connected by a wire 7042, and the other electrode on the upper surface of the LED element 7041 and the upper surface of the lead portion 7004B are connected by a wire 7042. Is done. Next, as described in the twentieth embodiment, a glass material is molded by a mold, and a sealing member 7005 having a predetermined shape is formed. Finally, unnecessary portions of the lead frame 7004 are removed, whereby each of the light emitting devices 7040 is separated from the lead frame 7004.

  In FIG. 98, for example, if the lead portion 7004A is on the anode side, the plus side of a DC power supply (not shown) is connected to the lead portion 7004A, and the minus side is connected to the lead portion 7004B. By this energization, the LED element 7041 emits light. The light is emitted from the upper surface of the LED element 7041, most of which is transmitted through the sealing member 7005 and emitted to the outside, and the other part is emitted from the sealing member 7005 through internal reflection.

  According to the twenty-first embodiment described above, in addition to the preferable effects of the twentieth embodiment, the value of the coefficient of thermal expansion between the lead portions 7004A and 7004B and the sealing member 7005 is taken into account, and the glass material has a low melting point. By using the above, even the face-up light emitting device 7040 can prevent peeling and cracking.

  In each of the above-described embodiments, a reflection surface may be formed on the surface of the lead portions 7004A and 7004B to increase the light emission efficiency.

  In addition, in the sealing member 7005 above the LED elements 7001 and 7042, a wavelength conversion unit using a phosphor or the like excited by light of a predetermined wavelength can be provided.

  Further, in each of the above-described embodiments, the number of LED elements disposed in one sealing member is one, but a multi-light-emitting type light emitting device having two or more LED elements is provided. You can also As the type of the light emitting device in this case, the configuration of FIG. 94 which is a flip chip bonding type is suitable. The plurality of LED elements to be mounted may have a configuration in which a plurality of LED elements having different emission colors are provided or a configuration in which a plurality of LED elements having the same emission color are provided.

  Furthermore, as a drive form of the LED element, all of the plurality of LED elements may be connected in parallel or in parallel in units of groups, may be connected in series in a plurality of units, or all may be connected in series.

  Further, as the shape of the sealing member 7005, a hemispherical structure in which a lens portion is formed on the top portion is shown, but the sealing member 7005 is not limited to the illustrated shape, and has a shape without a lens portion, Any shape such as a polygonal shape or a cylindrical shape can be used.

  Furthermore, in the molding of the sealing member 7005, the glass sheet is used, but the method is not limited to the method using the glass sheet, and other sealing methods may be used.

  99A and 99B show a flip-chip type light emitting device according to a twenty-second embodiment of the present invention. FIG. 99A is a cross-sectional view, and FIG. 99B is a side view seen from the right side of FIG. Note that common reference numerals are given to portions having the same configuration as that of the twentieth embodiment. This light emitting device 7010 has a configuration in which a submount element 7003 is mounted on a heat radiation portion 7050 made of Cu and integrally sealed with a sealing member 7005 made of low melting glass as shown in FIG. 99 (a). The lens 7005A is formed on the sealing member 7005.

  The submount element 7003 is accommodated in a groove part 7051 provided in the heat radiating part 7050. The wiring pattern 7053 provided on the surface of the submount element 7003 and the electrode of the LED element 7001 are electrically connected by the bump 7002, thereby the power supply part. Part of it. The wiring pattern 7053 is soldered to lead portions 7004A and 7004B made of soft metal Cu after bonding to the LED element 7001. In the lead portion 7004B, the sealing member 5 is heated and pressed while being insulated from the heat radiating portion 7050 by interposing a rod-like glass material 7052 having a rectangular cross section in the groove portion 7051 as shown in FIG. 99 (b). At this time, the lead portion 7004A is processed in the same manner as the lead portion 7004B. The lead portions 7004A and 7004B are integrated in a state where they are insulated from the heat radiating portion 7050 by the glass material 7052 and the sealing member 7005 melted based on the heating press.

  According to the twenty-second embodiment, since the heat radiating portion 7050 on which the submount element 7003 is mounted is integrally sealed with the sealing member 7005 made of a glass material, in addition to the preferable effects of the first embodiment. Thus, the heat dissipation of the heat transmitted from the submount element 7003 can be improved, and the heat dissipation can be improved not only during the glass sealing process but also when the amount of heat generated from the LED element 7001 increases due to, for example, an increase in current. A light emitting device 7001 which is excellent and hardly causes package cracking due to a difference in thermal expansion coefficient can be obtained.

In the above-described twenty-second embodiment, the configuration using the heat radiating portion 7050 made of Cu has been described. However, for example, the thermal conductivity of Cu alloy or aluminum is good, and the sealing member 7005 Those having a small difference in thermal expansion coefficient can also be used. If the heat radiating portion 7050 is made of aluminum, the difference in coefficient of thermal expansion between the LED element 7001 and the submount 7003 is about 500%.
FIGS. 100A and 100B show a face-up light emitting device according to a twenty-third embodiment of the present invention, wherein FIG. 100A is a cross-sectional view and FIG. 100B is a side view as viewed from the right side of FIG. Note that common reference numerals are given to portions having the same configuration as that of the twenty-first embodiment. In the light emitting device 70040, as shown in FIG. 100A, an LED element 7040 is bonded to the center of a heat radiating portion 50 made of Cu, and lead portions 7004A and 7004B for supplying power to the LED element 7040 and electrodes of the LED element 7040 Are electrically connected by a wire 7042. Further, the LED element 7040, the wire 7042, and the lead portions 7004A and 7004B are covered with a silicon coat portion 7060 made of a silicon resin so as to have heat resistance against heat at the time of processing the low melting point glass. The sealing member 7005 covers the silicon coating part 7060 and is integrated with the heat dissipation part 7050. Note that a lens 7005A is formed on the sealing member 7005.

  According to the twenty-third embodiment, even if it is a face-up type light emitting device 7040, the periphery of the LED element 7041 is covered with the silicon coat portion 7060 having heat resistance and elasticity, so that the LED due to the pressure at the time of glass sealing processing Since glass sealing is possible while preventing deformation of the electrode of the element 7041 and the wire 7042, in addition to the preferable effect of the twenty-first embodiment, the LED element 7041 is excellent in mountability and not only during glass sealing processing. For example, even when the amount of heat generated from the LED element 7041 increases due to an increase in current, a light emitting device 7001 that has good heat dissipation and is less likely to cause package cracking due to a difference in thermal expansion coefficient can be obtained. Further, the silicon coat part 7060 may contain a phosphor.

  In the above-described twenty-third embodiment, the configuration in which power is supplied from the pair of lead portions 7004A and 7004B to the LED element 7041 mounted on the heat dissipation portion 7050 has been described. For example, the heat dissipation portion 7050 and one lead It is good also as a structure which integrates a part and insulates the other lead part and the thermal radiation part 7050 with the glass material 7052.

  In addition to using a silicon resin as the coating material, other heat-resistant materials such as a ceramic coating material can be used. About the structure which provides this coating material, it is not limited to a face-up type LED element, It can apply also to a flip chip type LED element.

  If a light emitting element such as an LED is a material having a refractive index of 2 or more, light is extracted from the element by sealing the element with a sealing material having a refractive index of about 1.5 or more. The efficiency can be increased about twice or more. At this time, the sealing material needs to be translucent. The light-receiving element does not have this effect, and the effect of directly sealing and sealing the element with a translucent material is only the effect of reducing reflection at different interfaces of the medium. If it is not an optical element, there is no need for translucency.

  Further, although the sealing material has been described as glass, it may be crystallized after glass processing, and may be an inorganic material having high chemical stability.

As described above, according to the present invention, a sealing process can be performed without damaging the solid element even when a hard glass material of 10 ⁸ to 10 ⁹ poise is used. Therefore, it becomes possible to use a low melting point glass, and it is possible to realize a good glass sealing process while reducing the thermal load applied to the solid element. By embodying a glass-encapsulated solid element device that requires high-temperature processing and is a hard material as compared with a resin material, it can be used in an environment that requires high-temperature environment and weather resistance. Furthermore, by using a light-transmitting glass, it is possible to realize high reliability that the light transmittance is stable and does not change with time as an optical device. Further, by selecting a high refractive index glass for the solid light emitting element, the light extraction efficiency from the light emitting element can be improved, and a high efficiency light emitting device can be realized.

1 light emitting device 2 GaN-based LED element 3 glass-containing _Al 2 _{O 3} substrate 4 circuit pattern 5 Au stud bumps 6 P ₂ O ₅ -ZnO-based glass sealing part

Claims (9)

An inorganic material substrate;
A plurality of solid elements mounted on the inorganic material substrate by flip chip mounting and connected in series ;
A sealing glass that is bonded to the inorganic material substrate in contact with the plurality of solid elements and seals the plurality of solid elements;
A surface pattern formed on the inorganic material substrate and applying a current to the plurality of solid elements, the surface pattern being formed on the surface of the inorganic material substrate and connected to the plurality of solid elements, and the surface pattern A circuit pattern including a back surface pattern that is connected and formed on the back surface of the inorganic material substrate and connected to the outside ;
A heat dissipating pattern provided on the back surface of the inorganic material substrate on which the plurality of solid elements are mounted, and releasing heat of the plurality of solid elements to the outside;
The heat dissipation pattern is a solid element device that is provided in a portion corresponding to the plurality of solid elements on the back surface of the inorganic material substrate and in which the back surface pattern is not formed . The solid element device according to claim 1, wherein a bonding surface between the sealing glass and the inorganic material substrate surrounds the surface pattern of the circuit pattern. The surface pattern, solid state device as claimed in claim 1 or 2 outer shape is formed larger than the plurality of solid state element before Symbol circuit pattern. The inorganic material substrate has a rectangular shape,
The back pattern of the circuit pattern is exposed from the inorganic material substrate at a corner of the back surface of the inorganic material substrate,
The solid-state element device according to any one of claims 1 to 3, wherein the heat radiation pattern is provided except for the exposed portion of the back surface pattern of the circuit pattern. The solid surface element device according to claim 1, wherein the front surface pattern and the back surface pattern of the circuit pattern are formed by electrolytic plating. The plurality of solid elements are LED elements,
6. The circuit pattern according to claim 1, wherein the front surface pattern and the back surface pattern of the circuit pattern include a first circuit pattern connected to an anode of the LED element and a second circuit pattern connected to a cathode of the LED element. The solid element device according to any one of the above. A plurality of the first circuit patterns are provided for each element group including a plurality of the LED elements connected in series,
The solid-state element device according to claim 6, wherein the second circuit pattern is provided in common for the plurality of element groups.   The solid-state device according to claim 6 or 7, comprising a phosphor layer containing a phosphor.   The solid-state element device according to claim 6, wherein the phosphor layer covers the entire periphery of the LED element.

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