JP5333056B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  In the manufacturing process of a semiconductor device, as a method of mounting a chip on which a circuit is formed on a substrate, the chip is directly mounted on the substrate in a so-called face-down state in which the chip circuit is directed to the substrate without performing wire bonding. Flip chip mounting for mounting is known. In this case, a bump electrode called a bump is formed on the chip-side electrode, and the bump and the substrate-side electrode are joined.

Here, a conventional example of a method of manufacturing a semiconductor device when performing flip chip mounting will be described below.
First, bumps are formed on circuit electrodes formed on the wafer, and then the wafer is diced to form a plurality of chips.
On the other hand, a thermosetting adhesive is applied, printed, or transferred onto the substrate with a dispenser or the like so as to cover the electrodes.

  Next, the chip is sucked and held with a bonding tool, and the chip is placed on the thermosetting adhesive formed on the substrate so that the bumps face the substrate. At this time, the joining tool is heated and the chip is pressed toward the substrate. Thereby, the bump and the electrode are electrically connected. Further, the paste adhesive applied to the substrate is thermally cured until a predetermined curing rate is obtained.

  Thereafter, the substrate on which the chip is mounted is post-cured to completely cure the paste adhesive. Further, a BGA (Ball Grid Array) is formed on the surface of the substrate opposite to the surface on which the chip is mounted, and then the substrate is individualized by dicing along a cutting line.

  Here, in the semiconductor device manufacturing process, there is a case where a chip on the substrate is sealed with a resin portion made of a resin material after the chip is mounted. The resin part is formed by curing the thermosetting resin after it is once melted. Furthermore, a plurality of chips are collectively sealed with a sealing film.

  Moreover, what is equipped with the penetration process and the sealing process is known in the process of sealing a chip | tip using the sealing film which consists of resin materials. In the infiltration step, the substrate, the chip, and the sealing film are accommodated in a bag, and the bag is heated to, for example, less than 150 ° C., which is lower than the curing temperature, to soften the sealing film. Thereby, the softened sealing film is pressed by the pressure difference inside and outside the bag and enters between the chips. Next, the sealing film is cured in a curing process.

  When mounting the chip, instead of using a paste-like thermosetting adhesive, a thermosetting resin may be attached to the electrode of the substrate with an attaching tool. In this case, after pasting the thermosetting resin, the chip is pressed against the substrate with a load of 20 gf with a heated joining tool. The bumps enter the thermosetting resin by the pressing force of the joining tool, and the thermosetting resin is melted by heat. As a result, the bumps of the chip are bonded to the electrodes on the substrate side.

JP 2004-327623 A International Publication WO 97/02596 Specification International Publication WO2005 / 071731 Specification International Publication WO98 / 30073 Specification

  However, if a paste adhesive is used for chip connection, it is necessary to cure the paste adhesive each time a chip is temporarily mounted in the process of mounting the chip on the substrate. It takes longer time. Even when a thermosetting resin is used, it is necessary to cure the thermosetting resin every time one chip is temporarily mounted, so that the operation time becomes long. Such a problem is particularly noticeable when the number of chips mounted on one substrate is large. For example, when 300 to 400 chips are mounted on a sheet, it may take about one hour for pressure bonding.

Further, when using a paste-like adhesive, there is a possibility that the position of the chip may be shifted between the time when the chip is placed and the time when the adhesive is cured.
The present invention has been made in view of such circumstances, and a main object of the present invention is to make it possible to reliably mount a chip in a short time.

According to one aspect of the present application, a step of providing a B-staged adhesive layer on a chip or a substrate, a step of fixing a plurality of the chips to the substrate using the adhesive layer, and fixing to the substrate A step of forming a B-staged sealing film on the substrate so as to cover a plurality of the chips , and softening the sealing film between the adjacent chips and on the substrate. After the step of disposing the material constituting the sealing film and the step of softening the sealing film, the chip is pressed against the substrate through the sealing film, and the protruding electrode terminal formed on the chip And a step of electrically connecting the electrodes of the substrate, and a step of curing the adhesive layer and the sealing film.

  According to the present invention, since the chip and the substrate are temporarily fixed by providing the B-staged adhesive layer, it is not necessary to cure each time the chip is temporarily mounted as in the prior art, and the manufacturing time can be shortened.

FIG. 1 is a flowchart showing manufacturing steps of the semiconductor device according to the first embodiment of the present invention. FIG. 2 is a diagram illustrating a process of forming bumps on the chip. FIG. 3 is a diagram for explaining a substrate manufacturing process. FIG. 4 is a diagram illustrating a process of attaching a film adhesive to the substrate. FIG. 5 is a diagram illustrating a process of temporarily mounting a chip on a substrate. FIG. 6 is a diagram showing a state where the chip is temporarily mounted on the substrate. FIG. 7 is a diagram in which a sealing film is supplied. FIG. 8 is a diagram illustrating a chip sealing process. FIG. 9 is a diagram in which bumps are formed after sealing the chip. FIG. 10 is a view of the semiconductor device completed by cutting the substrate. FIG. 11 is a plan view showing a wafer on which bumps are formed. 12 is a cross-sectional view taken along line AA in FIG. FIG. 13 is a diagram illustrating a process of forming an adhesive layer made of a resin using a printing mask and a squeegee. FIG. 14 is a diagram in which an adhesive layer made of resin is formed on the wafer after the bumps are formed on the wafer and before individualization. FIG. 15 is a diagram illustrating a chip sealing process.

The objects and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims.
It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not intended to limit the invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In the drawings, similar components are given the same reference numerals.
(First embodiment)

First, an outline of a method of manufacturing a semiconductor device according to this embodiment will be described with reference to the flowchart of FIG.
First, a chip having a circuit formed by a semiconductor process is manufactured (step S101). In parallel with this, a substrate on which a chip is mounted is manufactured (step S102). Bumps are formed on the chip (step S103), and a film adhesive is supplied and attached to the substrate (step S104). Note that steps S101 and S103, which are chip-side processes, and steps S102 and S104, which are substrate-side processes, do not necessarily have to be performed in parallel.

  Next, the chip is temporarily mounted on the substrate by flip chip mounting (step S105). Subsequently, a sealing film is supplied to the substrate on which the chip is temporarily mounted (step S106), and the bump connection of the chip and the sealing of the chip are performed (step S107). Then, a ball is formed on the substrate (step S108), and then the substrate is cut into a predetermined size (step S109).

Hereinafter, each step will be described in detail.
First, in the chip manufacturing process in step S101, a circuit is first formed on a wafer using semiconductor technology. After this, the wafer is back-ground and individualized into chips by typing.

  Next, step S103 will be described with reference to FIG. A bump 2 that is a protruding electrode terminal is formed at a predetermined position of the individual chip 1 by using, for example, a ball bonding method. In the ball bonding method, a ball is formed by passing a bonding wire made of a gold material (not shown) through the capillary 3 and melting the bonding wire drawn from the lower part of the capillary 3. The bump 2 is formed by bringing the ball into contact with the electrode formed on the chip 1.

  On the other hand, in step S102, a substrate on which a chip is mounted is manufactured. As shown in FIG. 3, a sheet material 11 made of, for example, an epoxy resin is used for the substrate 10. When the substrate 10 is manufactured, the via hole 12 is formed in the sheet material 11 by drilling, and the circuit pattern 13 is formed on the surface using a printing technique or the like. An insulating protective film 14 is formed thereon. By forming the opening 14A in a part of the protective film 14, a part of the lower circuit pattern 13 is exposed. A part of the circuit pattern 13 exposed in this way becomes an electrode pad 13A for electrically connecting the bump 2 and the like.

In subsequent step S104, as shown in FIG. 4, a film adhesive 21 serving as an adhesive layer is attached to a predetermined position on the substrate 10. The film adhesive 21 is, for example, one that is detachably attached on the reel tape 22. When affixing the film adhesive 21, the film adhesive 21 is first cut into a predetermined size with a cutter 23. In addition, the film thickness and volume of the film adhesive 21 are set to an appropriate thickness to fill a gap formed between the chip 1 and the substrate 10 as will be described in detail later.

  Thereafter, the cut film adhesive 21 is attached to the mounting position of the chip 1 on the surface of the substrate 10. The electrode pad 13A is exposed around the film adhesive 21 at the mounting position. The film adhesive 21 is, for example, an epoxy resin thermosetting resin. For example, PET (polyethylene terephthalate) or Teflon (registered trademark) is used for the reel tape 22. The reel tape 22 to which the film adhesive 21 is attached is attached to an attaching device (not shown) in a wound state. The film adhesive 21 is cut by automatic processing and supplied to the substrate 10 side. The film adhesive 21 may be affixed using a known affixing machine, or the operator may affix the film adhesive 21 to the substrate 10 manually.

  Here, as the film adhesive 21, an adhesive that maintains the B stage at room temperature and shifts to the C stage at 180 ° C. or higher, for example, an epoxy resin, is used, and a curing agent or a curing accelerator is used as a base. In addition, it has a configuration in which a filler or the like is added. An example of such an adhesive is a product name “DS99” manufactured by Sony Chemical & Information Device.

  The B stage and the C stage indicate the state of the resin material, and there are other A stages. More specifically, the A stage is in a liquid or solid state and melts by heating. It is also positioned as a polymer precursor having a three-dimensional crosslinked structure. The B stage is further heated from the A stage and is usually in a solid state at room temperature. Compared with the C stage, crosslinking is insufficient, and it is sometimes referred to as a semi-cured state. The C stage is further heated from the B stage, becomes insoluble in the solvent at this stage, and does not swell. Furthermore, it will not melt even if heated further. The state of the C stage is also referred to as a cured state.

  In step S <b> 105, the chip 1 is temporarily mounted on the substrate 10. First, a large number of chips 1 are accommodated in a tray (not shown). At this time, the chip 1 is accommodated in the tray so that the bumps 2 face downward, that is, the back surface of the chip 1 is disposed on the upper side. Next, as shown in FIG. 5, the back surface of the chip 1 is held by the bonding tool 31 of the flip chip bonder. For holding the chip 1, for example, suction holding using a suction hole 31A formed in the bonding tool 31 can be used.

  Next, after suspending the chip 1 with the bonding tool 31, the chip 1 is moved above an imaging device (not shown) to confirm the position of the chip 1. Further, the recognition marks formed on the chip 1 side and the substrate 10 side are confirmed, and the substrate 10 and the chip 1 are aligned. Thereafter, the bonding tool 31 is moved to temporarily mount the chip 1 on the substrate 10 at the mounting position. The mounting position is a position at which the bump 2 formed on the chip 1 is disposed above the electrode pad 13A formed on the substrate 10. The bonding tool 31 presses the chip 1 against the substrate 10 with a predetermined pressure. As a result, as shown in FIG. 6, the B-staged, that is, uncured film adhesive 21 is deformed and spreads so that the film adhesive 21 covers the bumps 2.

Here, the position where the chip 1 is mounted is the position where the film adhesive 21 is supplied in step S104. As a result, the chip 1 is fixed to the substrate 10 via the film adhesive 21 that is adhesive in an uncured state. Therefore, even if the substrate 10 is moved after this, the position of the bump 2 formed on the chip 1 and the position of the electrode pad 13A on the substrate 10 are prevented from shifting. In addition, the height from the board | substrate 10 to the chip | tip 1 at this time shall be 50 micrometers-100 micrometers. This process is repeated until a necessary number of chips 1 are temporarily mounted on the substrate 10. Since it is not necessary to dry the adhesive each time one chip 1 is mounted as in the prior art, the working time can be shortened.

  In subsequent step S106, as shown in FIG. 7, the sealing film 41 is supplied onto the substrate 10 on which the chip 1 is temporarily mounted. What sealed the sealing film 41 beforehand to the magnitude | size which covers the board | substrate 10 and the chip | tip 1 is used. In this state, the bump 2 and the electrode pad 13A may not be connected.

  The sealing film 41 is an epoxy-based thermosetting film, and maintains a semi-cured B-stage state while maintaining elasticity in a temperature range from room temperature to 80 ° C., and a temperature range from 80 ° C. to 150 ° C. Then, a material that softens and becomes semi-liquid and starts to cure in a temperature range of 150 ° C. or higher is used. Examples of such a sealing film 41 include an epoxy sheet (trade name) manufactured by Nagase ChemteX Corporation.

  Since this process is performed at room temperature, the sealing film 41 maintains a B-staged sheet state on the chip 1. For this reason, a space 40 is formed between two adjacent chips 1. Note that the thickness of the sealing film 41 is, for example, about 300 μm when the target value of the thickness after sealing is about 200 μm.

In step S107, the bump 2 of the chip 1 and the electrode pad 13A of the substrate 10 are connected and the chip 1 is sealed. This process can be further divided into four processes: a head heating process, an interchip sealing process, a pressure connection process, and a curing process.
First, as shown in FIG. 8A, in the first stage head heating step, the substrate 10 is placed on a stage 42 that can be heated, and a press head 43 that can be controlled in temperature is attached to a sealing film 41. It arranges above. At this stage, the press head 43 is not in contact with the sealing film 41. The temperature of the stage 42 is set to a temperature at which the film adhesive 21 and the sealing film 41 are not cured, for example, about 70 ° C. Further, the temperature of the press head 43 is 80 ° C. Note that the press head 43 has a size that can uniformly contact the sealing film 41 above the substrate 10.

  Next, an inter-chip sealing process is performed as a second stage. As shown in FIG. 8B, the press head 43 heated to 80 ° C. is lowered. In this temperature region, the sealing film 41 softens from the B stage and becomes semi-liquid, so that the material of the sealing film 41 melted by the press head 43 is filled in the space 40 between the chips 1. The thickness of the sealing film 41 at this time is about 250 μm to 300 μm when the target value of the distance from the substrate 10 to the back surface of the chip 1 is 200 μm. The film adhesive 21 maintains the B stage state.

  Here, you may hold | maintain the press head 43 for several seconds in the state which contacted the sealing film 41. FIG. Further, when the sealing film 41 is filled between the chips 1, if the surroundings are in a vacuum atmosphere, void entrainment or unfilling between the chips 1 is less likely to occur.

  The Young's modulus of the film adhesive 21 and the sealing film 41 is larger in the film adhesive 21 than in the sealing film 41. Thereby, the film material of the sealing film 41 can be filled between the chips 1 while maintaining a gap between the temporarily fixed chip 1 and the substrate 10.

Further, as a third stage, a pressure connection process is performed. First, the temperature of the press head 43 is set to 180 ° C. and further lowered. At this time, the curing of the sealing film 41 is not sufficiently progressed and maintains a semi-liquid state. Moreover, since the film adhesive 21 between the board | substrate 10 and the chip | tip 1 is heated at 180 degreeC, it softens and becomes semi-liquid. In this state, since the film adhesive 21 and the sealing film 41 have a hardness that can transmit the pressing force of the press head 43 to the chip 1, as shown in FIG. The bump 2 of the chip 1 pressed through the sealing film 41 and the electrode pad 13A on the substrate 10 side come into contact with each other and are electrically connected.

  In addition, since the material of the sealing film 41 is filled so as to cover the chip 1 in the stage before this processing, the chip 1 and the press head 43 are prevented from coming into direct contact and chipping does not occur. In addition, since a large number of chips 1 are pressed uniformly through the sealing film 41, variations in the height of the chips 1 with respect to the substrate 10 can be suppressed.

  And as a 4th step, a hardening process is implemented. That is, the temperature and pressing of the press head 43 are continued, and the film adhesive 21 and the sealing film 41 are substantially cured. Thereafter, post-curing is performed to completely cure the film adhesive 21 and the sealing film 41. In the curing process, the temperature of the press head 43 may be raised from the previous stage to accelerate the curing.

  In the next step S108, a ball used for mounting the substrate 10 on another apparatus is formed. As shown in FIG. 9, the ball 45 is made of solder on each electrode pad 13A after the flux is printed on the electrode pad 13A formed on one surface of the substrate 10, that is, the surface on which the chip 1 is not mounted. A ball 45 is formed to form a BGA. Next, the ball 45 and the electrode pad 13A are connected in a reflow process, and then the flack is washed.

  Further, when the substrate 10 is divided along a predetermined cutting line L1 in step S109, a plurality of semiconductor devices 50 each having a package as shown in FIG. 10 are obtained.

  As described above, in this embodiment, the chip 1 is temporarily fixed to the substrate 10 using the film adhesive 21. Since the film adhesive 21 has an adhesive force that can prevent displacement of the chip 1 when the chip 1 is pressed, the chip is temporarily attached as in the case of using a conventional paste-like adhesive. There is no need to cure each time it is mounted, and manufacturing time can be shortened.

  Since the film adhesive 21 has an adhesive force that can prevent the positional deviation of the chip 1, the positional deviation between the chip 1 and the substrate 10 can be prevented in the manufacturing process without performing a curing process. In addition, the adhesive force between the gold bump 2 and the gold electrode pad 13A may be small by simply pressing the chip 1 against the substrate 10 with the press head 43. Since the substrate 10 is bonded, the positional deviation between the chip 1 and the substrate 10 is prevented even in the semiconductor device 50.

  Further, in the step of pressing the chip 1 against the substrate 10 with the press head 43, the temperature of the press head 43 is controlled so that the space 40 between the chips 1 is filled with the material of the sealing film 41. You can save time. Further, by controlling the temperature of the press head 43, before the sealing film 41 is cured, the film adhesive 21 can be made semi-liquid to form an electrical connection between the bump 2 and the electrode pad 13A.

Here, a modification of this embodiment will be described below.
11 and 12, bumps 52 are formed on the wafer 51 before being divided into chips 1. For example, the bump 52 is grown by electrolytic plating after forming a mask on the wafer 51 and providing an opening at the bump formation position of the mask. After the bumps 52 are formed, the mask is removed, and then back-grinding is performed and the chips are separated into individual chips. The semiconductor device 50 can be formed by mounting the chip 1 thus formed on the substrate 10 in the same manner as described above. The manufacturing time can be shortened when the bumps 52 are formed in many locations.

(Second Embodiment)
As shown in FIG. 13, a print mask 61 is mounted on the substrate 10 side, and a resin paste adhesive 62 is supplied from above with a squeegee 63. In the print mask 61, an opening 61A is formed in a region where the chip 1 is mounted and where the electrode pad 13A for bump connection is avoided. After applying the paste adhesive 62, the printing mask 61 is removed. Thereby, the film adhesive 21 as shown in FIG. 5 is formed. As the adhesive 62, a paste-like adhesive having the same composition as the material of the film adhesive 21 of the first embodiment is used. Then, as in the first embodiment, the chip 1 is temporarily mounted, and the semiconductor device 50 is manufactured while utilizing the difference in curing temperature between the adhesive 62 and the sealing film 41. Thereby, the same effect as that of the first embodiment can be obtained.

(Third embodiment)
Also, as shown in FIGS. 11 and 12, after the bumps 52 are formed on the wafer 51 and before dicing, a paste-like adhesive 62 is applied to the surface of the wafer 51 using a spin coat method. The adhesive 62 is preferably made of the same material as the film adhesive 21 of the first embodiment. When the adhesive 62 is adjusted to a desired thickness to cover the bumps 52 by rotating a spinner or the like and then dried, an adhesive layer 66 is formed as shown in FIG. At this time, the adhesive layer 66 is a pseudo B stage. Thereafter, the wafer 51 is back-ground and then diced to divide it into chips 1. The adhesive layer 66 is preferably formed to a thickness that covers the bumps 52, but may be the same film thickness as the bumps 52 or a film thickness smaller than the bumps 52.

  When temporarily fixing the chip 1 to the substrate 10, the adhesive layer 66 is pressed against a predetermined position of the substrate 10. At this stage, the bump 52 on the chip 1 side and the electrode 13A on the substrate 10 side are not electrically connected. Thereafter, the semiconductor device 50 is formed by performing steps S106 to S109 in FIG.

(Fourth embodiment)
In this embodiment, a sealing film 41 having a temperature that becomes semi-liquid from the B stage is higher than that of the film adhesive 21 is used. The adhesive used for the film adhesive 21 and the sealing film 41 has a configuration in which a curing agent, a curing accelerator, a filler, and the like are added to the epoxy main agent. The film adhesive 21 lowers the curing temperature by using an imidazole-based material as a curing accelerator. On the other hand, the sealing film 41 uses the same thing as the film adhesive 21 for an epoxy main ingredient and a hardening | curing agent, and raises hardening temperature by using a phosphorus-type material for a hardening accelerator.

  The semiconductor device 50 is manufactured according to the flowchart of FIG. 1, and the content of the process in step S107 is different from that of the first embodiment. In this embodiment, step S107 is further divided into a head heating process, a pressure connection process, an inter-chip sealing process, and a curing process.

  First, after temporarily mounting the chip 1 on the substrate 10 using the film adhesive 21, when the sealing film 41 is supplied, it is placed on the stage 42 as shown in FIG. Let In addition, when the thickness from the board | substrate 10 after mounting to the chip | tip 1 is 200 micrometers, the film thickness of the sealing film 41 shall be about 200 micrometers-250 micrometers.

  In the first head heating step, the temperature of the press head 43 is set to a temperature at which the Young's modulus of the film adhesive 21 is smaller than the Young's modulus of the sealing film 41 in the range of room temperature to 150 ° C. At this stage, since the press head 43 is not in contact with the sealing film 41, both the film adhesive 21 and the sealing film 41 maintain the B stage.

  Next, as a pressure connection process, the press head 43 is lowered and the chip 1 is pressed toward the substrate 10 through the sealing film 41. The temperature of the press head 43 is set so that the sealing film 41 is not liquefied but the film adhesive 21 is softened and becomes semi-liquid. When the height of the chip 1 from the substrate 10 reaches a predetermined height, the lowering of the press head 42 is stopped. As a result, the chip 1 is flip-chip connected to the substrate 10 as shown in FIG.

  In the subsequent inter-chip sealing step, the temperature of the press head 43 is set to a temperature at which both the film adhesive 21 and the sealing film 41 become semi-liquid. Thereby, the sealing film 41 is softened and filled in the space 40 between the chips 1, and the chip 1 is sealed. In addition, when this process is implemented in a vacuum atmosphere, generation | occurrence | production of void entrainment, unfilling of a film material, etc. can be prevented.

  And in a hardening process, heating is continued, maintaining the pressing force by the press head 43, and the sheet adhesive 21 and the sealing film 41 are hardened substantially. Then, the film adhesive 21 and the sealing film 41 are C-staged by performing post cure.

  In this embodiment, the same effect as in the first embodiment can be obtained. Further, the resin formed in the second or third embodiment may be used. Further, bumps 52 as shown in FIGS. 11 and 12 may be used.

The present invention can be widely applied without being limited to the above-described embodiments.
For example, the adhesive layer (for example, the film adhesive 21) or the type of the sealing film 41 may be any material that maintains the B stage at room temperature and has different temperatures from the B stage to the C stage and different curing times. The above is not limited. Additives for changing the curing temperature are not limited to imidazole materials and phosphorus materials. Further, the temperature at which each of the adhesive layer and the sealing film 41 is cured from the B stage through a semi-liquid state is not limited to the embodiment.

Further, the temperature of the press head 43 may be changed for changing the stage, or a material whose stage changes with time without changing the temperature may be used.
Furthermore, after applying the adhesive to the substrate 10 by screen printing, spin coating, or spray coating, a pseudo B stage state is obtained by performing a drying process to volatilize the solvent in the adhesive to a dry state. You may form the adhesive bond layer which has.

  All examples and conditional expressions given here are intended to help the reader understand the inventions and concepts that have contributed to the promotion of technology, such examples and It should be construed without being limited to the conditions, and the organization of such examples in the specification is not related to showing the superiority or inferiority of the present invention. Although embodiments of the present invention have been described in detail, it should be understood that various changes, substitutions and variations can be made thereto without departing from the spirit and scope of the present invention.

Hereinafter, features of the embodiment will be added.
(Supplementary note 1) A step of providing a B-staged adhesive layer on a chip or a substrate, a step of fixing the chip to the substrate using the adhesive layer, and a B-staged sealing on the chip A step of stacking films, a step of softening the sealing film, filling a space between adjacent chips with a material constituting the sealing film, and pressing the chip against the substrate through the sealing film And a step of electrically connecting the protruding electrode terminal formed on the chip and the electrode of the substrate, and a step of curing the adhesive layer and the sealing film. Manufacturing method.
(Additional remark 2) The process of electrically connecting the said protruding electrode terminal and the electrode of the said board | substrate is implemented after the process of filling the material which comprises the said sealing film between the said chips. The manufacturing method of the semiconductor device as described in any one of Claims 1-3.
(Additional remark 3) The process of filling the material which comprises the said sealing film between the said chip | tips makes the press head which presses the said chip | tip toward the said board | substrate contact | abut to the said sealing film, and sets the temperature of the said press head. The step of heating the adhesive layer to a temperature at which the B-stage is maintained and the sealing film is softened, and the step of electrically connecting the protruding electrode terminal and the electrode of the substrate includes the press head The semiconductor device according to claim 2, further comprising a step of pressing the chip toward the substrate with the press head while heating the temperature to a temperature at which the sealing film and the adhesive are both softened. Manufacturing method.
(Additional remark 4) The process of filling the material which comprises the said sealing film between the said chips is implemented after the process of electrically connecting the said protruding electrode terminal and the electrode of the said board | substrate. Additional remark 1 characterized by the above-mentioned. The manufacturing method of the semiconductor device as described in any one of Claims 1-3.
(Supplementary Note 5) In the step of electrically connecting the protruding electrode terminal and the electrode of the substrate, the temperature of the press head is heated to a temperature at which the sealing film maintains the B stage and the adhesive is softened. However, the step of pressing the chip toward the substrate with the press head, the step of filling the material constituting the sealing film between the chips, the temperature of the press head is the adhesive layer The method for manufacturing a semiconductor device according to appendix 4, further comprising a step of heating to a temperature at which the sealing film is softened.
(Additional remark 6) The process of providing the said adhesive bond layer on the said chip | tip or the said board | substrate cut | disconnects the film of the adhesive agent made into B stage into a predetermined shape, Then, it attaches to the said board | substrate. The manufacturing method of the semiconductor device as described in any one of Claim 5 thru | or Addendum 5.
(Appendix 7) In the step of providing the adhesive layer on the chip or the substrate, a paste-like adhesive is applied to the substrate using a mask and then B-staged to form the adhesive layer. The method for manufacturing a semiconductor device according to any one of appendix 1 to appendix 5, wherein: (Supplementary note 8) The adhesive layer is formed by forming the protruding electrode terminal on the wafer and then applying a paste-like adhesive on the surface of the wafer and then forming a B-stage to form the adhesive layer. The method for manufacturing a semiconductor device according to any one of appendix 5.

1 Chip 2,52 Bump 10 Substrate 21 Film adhesive 41 Sealing film 43 Press head

Claims (4)

Providing a B-staged adhesive layer on the chip or on the substrate;
Fixing the plurality of chips to the substrate using the adhesive layer;
After the step of fixing to the substrate, forming a sealing film B-staged on the substrate so as to cover the plurality of chips;
Softening the sealing film, placing the material constituting the sealing film on the substrate between the adjacent chips; and
After the step of softening the sealing film, the step of pressing the chip against the substrate through the sealing film and electrically connecting the protruding electrode terminal formed on the chip and the electrode of the substrate; ,
Curing the adhesive layer and the sealing film;
A method for manufacturing a semiconductor device, comprising: The step of forming the material constituting the sealing film on the substrate between the chips includes contacting a press head that presses the chip against the substrate against the sealing film, and setting the temperature of the press head to The adhesive layer maintains the B stage and has a step of heating to a temperature at which the sealing film softens;
The step of electrically connecting the protruding electrode terminal and the electrode of the substrate includes the step of heating the chip with the press head while heating the temperature of the press head to a temperature at which the sealing film and the adhesive are softened together. The method for manufacturing a semiconductor device according to claim 1 , further comprising a step of pressing toward the substrate. Providing a B-staged adhesive layer on the chip or on the substrate;
Fixing the plurality of chips to the substrate using the adhesive layer;
After the step of fixing to the substrate, forming a B-staged sealing film on the substrate so as to cover the plurality of chips;
Pressing the chip against the substrate through the sealing film, and electrically connecting the protruding electrode terminal formed on the chip and the electrode of the substrate;
After the step of electrically connecting, the step of softening the sealing film and disposing the material constituting the sealing film on the substrate between the adjacent chips;
Curing the adhesive layer and the sealing film;
A method for manufacturing a semiconductor device, comprising: The step of electrically connecting the protruding electrode terminal and the electrode of the substrate is performed by heating the press head to a temperature at which the sealing film maintains the B stage and the adhesive softens. A step of pressing the chip against the substrate with a press head;
The step of forming the material constituting the sealing film on the substrate between the chips includes the step of heating the temperature of the press head to a temperature at which the adhesive layer and the sealing film are softened. A method of manufacturing a semiconductor device according to claim 3 .

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