JP5332281B2 - Gas barrier laminated film - Google Patents

Description

  The present invention relates to a laminated film in which a gas barrier property is further improved in a gas barrier laminated film in which a vapor deposition film is provided on a substrate made of a plastic film.

Gas barrier laminated films are mainly used as packaging materials for foods and pharmaceuticals in order to prevent the influence of oxygen and water vapor, which cause changes in the quality of contents, and are used in liquid crystal display panels and EL display panels. In order to prevent the formed element from deteriorating performance due to contact with oxygen or water vapor, it is used as a packaging material for electronic devices and the like.
Among such gas barrier laminate films, those having a silicon oxide (SiO _x ) vapor deposition film or a carbon-containing silicon oxide (SiO _x C _z ) vapor deposition film formed by chemical vapor deposition (CVD) are known. However, as the required gas barrier level increases, a laminated film that can exhibit higher gas barrier properties is demanded.

In response to the above requirements, by including nitrogen in the vapor deposition film containing silicon as a main component, a denser film can be obtained as compared with a silicon oxide vapor deposition film not containing nitrogen or a carbon-containing silicon oxide vapor deposition film. It has been found that the barrier properties against gas and water vapor are improved. However, it is technically difficult to mix nitrogen into the deposited film as compared with oxygen, and various problems occur in terms of manufacturing. For example, Patent Document 4 describes that a toxic raw material such as silane gas is used together with ammonia gas in order to form a deposited film made of silicon nitride (SiN _y ). Could not be applied to a large-scale vapor deposition machine such as a roll-to-roll system because of safety measures.
Japanese Patent No. 3481001 JP-A-8-14254 JP-A-11-322982 Japanese Patent No. 38539595

  An object of the present invention is to provide a gas barrier laminate film that exhibits high barrier properties against oxygen gas and water vapor and can be efficiently mass-produced without using dangerous raw materials.

The present inventors have sought the structure of various gas barrier laminate films and, as a result of intensive studies, have found the conditions necessary to achieve the above-mentioned problems.
Specifically, a silicon compound vapor-deposited film and a gas barrier coating film are alternately laminated in this order twice or more on one surface of a substrate made of a plastic film, and the gas barrier coating film is formed. Is a gas barrier laminated film formed so that the outermost layer has a composition of SiO _x N _y C _z {0.4 <x <1.0, 0.3 <y <1.5, 1.0 <z <2.0 0.1 <y / (x + y + z) <0.5}, the gas barrier laminate film exhibited extremely high gas barrier properties and could be efficiently produced by a roll-to-roll method.
Further, by laminating the silicon compound vapor deposition film constituting the gas barrier laminate film by the plasma chemical vapor deposition method, a dense film quality can be obtained and an extremely high gas barrier property can be exhibited.

Further, in the general formula _{^{R 1 n M (OR 2)}} m ( wherein, R ^1, R ² is an organic group having 1 to 8 carbon atoms, M is a metal atom, n is an integer of 0 or more, m is an integer of 1 or more, and n + m is a valence of M), and polyvinyl alcohol and / or ethylene / vinyl alcohol are hydrolyzed by a sol-gel method. The gas barrier coating film obtained by applying and drying the gas barrier composition obtained by condensation has good compatibility with the film quality of the silicon compound deposited film constituting the gas barrier laminated film of the present invention. Exhibits excellent gas barrier properties.

Furthermore, this invention provides the manufacturing method of the said gas-barrier laminated | multilayer film. Specifically, a step (a) of laminating a silicon compound vapor-deposited film on one surface of a substrate made of a plastic film, and a step (b) of laminating a gas barrier coating film on the silicon compound vapor-deposited film, Is a method for producing a gas barrier laminated film comprising alternately repeating twice or more times, wherein in the step (a), a film forming monomer gas comprising at least one organosilicon compound, A film-forming mixed gas composition containing a nitrogen-containing gas that reacts with the film-forming monomer gas and an inert gas is used, and the composition of the silicon compound vapor-deposited film is SiO _x N _y C _z {0.4 <x <1.0 , 0.3 <y <1.5, 1.0 <z <2.0, 0.1 <y / (x + y + z) <0.5}, wherein the composition ratio of the mixed gas composition for film formation is adjusted. Provide a method.
Furthermore, in this invention, the said manufacturing method can be performed by a roll toe roll system.

The gas barrier laminate film of the present invention is a transparent gas barrier film that can cope with an extremely high level of gas barrier properties required in the electric and electronic fields such as semiconductors.
The silicon compound vapor-deposited film constituting the gas barrier laminate film of the present invention contains nitrogen in a suitable weight ratio with oxygen and carbon, and is therefore dense, and therefore exhibits excellent gas barrier properties. it can.

Furthermore, in this invention, since carbon exists in a suitable weight ratio in a silicon compound vapor deposition film | membrane, the hydrophobicity of a film | membrane increases and it can show high gas barrier property with respect to water vapor | steam. Moreover, since flexibility is imparted to the film as compared with a vapor deposition film not containing carbon, generation of cracks due to stress during processing can be prevented, and a decrease in gas barrier ability can be suppressed.
In addition, the gas barrier coating film constituting the gas barrier laminated film of the present invention enables extremely high gas barrier performance, and can be generated when another film is laminated by the gas barrier coating film being the outermost layer. It is possible to minimize delamination and deterioration of gas barrier properties due to insufficient adhesion strength.
Moreover, in this invention, since a silicon compound vapor deposition film is formed without using silane gas, it is preferable in terms of safety. Furthermore, since it is possible to use a large-scale vapor deposition apparatus by a roll-to-roll system, the gas barrier laminate film of the present invention is excellent in productivity and preferable in terms of cost.

The present invention will be described in detail below with reference to the drawings. Moreover, the resin names used in the present invention are those commonly used in the industry.
FIG. 1 is a schematic cross-sectional view showing an example of the layer structure of the gas barrier laminate film of the present invention.
As shown in FIG. 1, the gas barrier laminate film of the present invention is formed by sequentially laminating a silicon compound vapor-deposited film 2 and a gas barrier coat film 3 on one surface of a substrate 1 made of a plastic film, and further thereon. The basic structure is a structure in which the silicon compound vapor deposition film 4 and the gas barrier coating film 5 are laminated.
Further, the gas barrier property can be further enhanced by further laminating a laminate unit composed of a silicon compound vapor deposition film and a gas barrier coating film once or more on the gas barrier coating film 5.
The silicon compound vapor deposition film may be a single layer or a multilayer composed of two or more layers.

Next, the material which comprises the gas barrier laminated film of this invention, its manufacturing method, etc. are demonstrated.
<1> Substrate made of plastic film In the present invention, the substrate made of plastic film is excellent in chemical or physical strength, withstands the conditions for forming a silicon compound vapor-deposited film, and has the characteristics of the silicon compound vapor-deposited film. Any plastic film that can be held well without loss can be used.

  Specific examples of such plastic films include, for example, polyolefin resins such as polyethylene resins or polypropylene resins, cyclic polyolefin resins, polystyrene resins, acrylonitrile-styrene copolymers (AS resins), acrylonitrile- Butadiene-styrene copolymer (ABS resin), poly (meth) acrylic resin, polycarbonate resin, polyester resin such as polyethylene terephthalate and polyethylene naphthalate, various polyamide resins such as nylon, polyurethane resin, acetal Films made of various plastic materials such as resins and cellulose resins can be used.

  In the present invention, as the various films, for example, one or more of the various resins described above are used, and film forming methods such as an extrusion method, a cast molding method, a T-die method, a cutting method, and an inflation method are used. Using the above-mentioned various resins alone, forming a multilayer co-extrusion film using two or more kinds of resins, and using two or more kinds of resins. Various films are manufactured by a method of mixing and forming a film before forming a film, and further, for example, using a tenter method, a tubular method, etc. Various films stretched in the direction can be used.

In addition, when using one or more of the above-mentioned various resins and forming the film, for example, film processability, heat resistance, weather resistance, mechanical properties, dimensional stability, antioxidant properties, slipperiness, Various plastic compounding agents and additives can be added for the purpose of improving and modifying mold release properties, flame retardancy, antifungal properties, electrical properties, strength, etc. From a very small amount to several tens of percent, it can be arbitrarily added depending on the purpose.
In the above, as a general additive, for example, a lubricant, a crosslinking agent, an antioxidant, an ultraviolet absorber, a light stabilizer, a filler, a reinforcing agent, an antistatic agent, a pigment, and the like can be used. In this case, a modifying resin or the like can also be used.
In addition, if necessary, the surface of the substrate can be optionally subjected to surface activation treatment such as corona treatment, plasma treatment, flame treatment, and the like.

<2> Silicon Compound Vapor Deposition Film In the present invention, the silicon compound vapor deposition film comprises a film forming monomer gas composed of at least one organic silicon compound, a nitrogen-containing gas, and oxygen gas and water remaining in the chamber of the vapor deposition machine. A chemical reaction is caused in a plasma atmosphere, and the reaction product is closely adhered to the surface of the base material or the surface of the gas barrier coating film described later to form a dense continuous thin film with high flexibility.

The composition formula is represented by SiO _x N _y C _z , where 0.4 <x <1.0, 0.3 <y <1.5, 1.0 <z <2.0, 0.1 <y / (x + y + z) <0.5. As a result of forming a silicon compound vapor-deposited film under various conditions, the inventors of the present invention have excellent oxygen gas barrier properties and pure water nitridation by setting the parameters x, y, and z within an appropriate range. It was found that an excellent water vapor barrier property comparable to a silicon (SiN _y ) film can be obtained. Specifically, in order to increase the oxygen gas barrier property and the water vapor barrier property, the oxygen content in the silicon compound deposition film is decreased, the nitrogen content is increased, and the carbon content is within the range of 1.0 <z <2.0. It is preferable to do. When the oxygen content is too high and / or when the nitrogen content is too low, the water vapor barrier property of the silicon compound deposited film is lowered. On the other hand, if the carbon content is too low, the silicon compound vapor-deposited film becomes brittle and barrier deterioration can occur. Conversely, if the carbon content is too high, the water vapor barrier property is lowered. However, considering the balance between each element in order to obtain a practical product using a large-sized vapor deposition apparatus, the above numerical ranges, 0.4 <x <1.0, 0.3 <y <1.5, 1.0 <z <2.0, 0.1 < It is preferable that y / (x + y + z) <0.5.

  Here, the values of x, y, and z are mainly the kind of the organic silicon compound to be used and the film forming monomer gas: nitrogen-containing gas: inert gas: oxygen gas remaining in the chamber: water remaining in the chamber. It varies depending on the molar ratio of the plasma and the energy of the plasma.

The silicon compound vapor deposition film of the present invention can further contain hydrogen in addition to silicon, oxygen, nitrogen and carbon, such as a C—H bond-containing site, such as a CH ₃ group, or a Si—H bond-containing site, For example, SiH ₃ group or hydroxyl group OH can be contained.
In the present invention, the above physical properties can be confirmed by conducting elemental analysis of the silicon compound vapor-deposited film using a surface analyzer such as an X-ray photoelectron spectrometer (XPS).
Moreover, in this invention, the film thickness of a silicon compound vapor deposition film can be arbitrarily selected, for example in the range of 5-1000cm, Preferably it is 50-500cm.

<3> Vapor Deposition Method In the present invention, the silicon compound vapor deposition film is formed by a chemical vapor deposition method (Chemical Vapor Deposition method, CVD method), preferably a plasma chemical vapor deposition method.
In the present invention, specifically, a film-forming monomer gas comprising at least one organosilicon compound is used as a raw material, a nitrogen-containing gas that reacts with the film-forming monomer gas is used, and an argon gas is used as a carrier gas. Using an inert gas such as helium gas, the silicon compound vapor deposition film is formed on the substrate surface or the gas barrier coating film surface described later using a low temperature plasma chemical vapor deposition method utilizing a low temperature plasma generator or the like. Can be formed.

In the above, as the low-temperature plasma generator, for example, generators such as high-frequency plasma, pulse wave plasma, microwave plasma can be used, but in the present invention, in order to obtain a highly active stable plasma, It is desirable to use a high frequency plasma generator.
An example of the method for forming a silicon compound deposited film by low temperature plasma chemical vapor deposition in the present invention will be described. FIG. 2 is a schematic configuration diagram of a roll-to-roll low temperature plasma chemical vapor deposition apparatus used in the above plasma chemical vapor deposition method.
In the present invention, the roll-to-roll method refers to a production method in which a layer structure is constructed on a base material wound in a roll shape and is wound around a roll again. Compared with the batch method, the production efficiency is extremely good, but since it is performed by a large-sized apparatus, it can be applied only to a specific manufacturing method.

  In the present invention, as shown in FIG. 2, a film to be deposited 20, for example, a base material or a gas barrier coating film, is transferred from an unwinding roll 23 arranged in a vacuum chamber 22 of a low temperature plasma chemical vapor deposition apparatus 21. The film as the outer layer is fed out, and the film to be deposited 20 is further transported on the circumferential surface of the cooling / electrode drum 25 in the deposition chamber 36 through the auxiliary roll 24 at a predetermined line speed. Nitrogen-containing gas, inert gas, film forming monomer gas, and the like are supplied from the gas supply devices 26 and 27 and the raw material volatilization supply device 28, and the raw material supply nozzle 29 is prepared while adjusting the mixed gas composition for film formation composed of these. Then, the mixed gas composition for film formation is introduced into the vapor deposition chamber 36, and the plasma is generated by the glow discharge plasma 30 on the film 20 to be vapor-deposited on the circumferential surface of the cooling / electrode drum 25. It is generated and irradiated to form a silicon compound vapor deposition film. At that time, the cooling / electrode drum 25 is applied with a predetermined power from a power source 31 disposed outside the vacuum chamber 22, and a magnet 32 is disposed in the vicinity of the cooling / electrode drum 25. The generation of plasma is promoted. Next, the deposited film 20 is wound around the winding roll 34 via the auxiliary roll 33 after forming a silicon compound deposited film on the deposition surface. In the figure, 35 represents a vacuum pump.

In the raw material volatilization supply device, the organosilicon compound as the raw material is volatilized and mixed with a nitrogen-containing gas, an inert gas, etc. supplied from the gas supply device, and this mixed gas is vapor-deposited through the raw material supply nozzle. Introduce into the chamber.
In the present invention, the composition of the resulting silicon compound vapor-deposited film is adjusted to SiO _x by adjusting the mixing ratio of the monomer gas for film formation obtained by volatilizing the organosilicon compound, the nitrogen-containing gas, and the inert gas. N _y C _z {0.4 <x <1.0, 0.3 <y <1.5, 1.0 <z <2.0, 0.1 <y / (x + y + z) <0.5}. The mixing ratio is, for example, 1 to 40% by volume of the film forming monomer gas, 10 to 70% by volume of the nitrogen-containing gas, and 10 to 60% of the inert gas. Although it can be about volume%, it changes according to various conditions, such as the kind of organosilicon compound to be used, oxygen gas and water remaining in the chamber, and the energy of plasma.

On the other hand, since a predetermined voltage is applied to the cooling / electrode drum from the electrode, glow discharge plasma is generated in the vicinity of the opening of the raw material supply nozzle in the vapor deposition chamber and the cooling / electrode drum. In this state, a silicon compound vapor deposition film is formed on the vapor deposition film on the circumferential surface of the cooling / electrode drum. Here, the vapor-deposited film is transported at a constant line speed to obtain a gas barrier laminated film including a silicon compound vapor-deposited film having a uniform film thickness.
In addition, the line speed which conveys a vapor deposition film can be about 10-300 m / min, Preferably it can be about 50-150 m / min.

In the above low-temperature plasma chemical vapor deposition apparatus, the silicon compound vapor deposition film is formed into a thin film on the film to be deposited using the plasma source gas. A rich continuous layer.
Therefore, it is possible to prevent a silicon compound vapor-deposited film from being broken due to deformation or bending of the film, and to obtain a gas barrier laminated film that can exhibit high gas barrier properties over a long period of time.

In the present invention, as the monomer gas for film formation, an organic silicon compound such as hexamethyldisiloxane (HMDSO), tetramethyldisiloxane (TMDSO), hexamethyldisilazane (HMDS), octamethylcyclotetrasiloxane, etc. Or it can be used as a mixture of two or more.
Further, as the nitrogen-containing gas that reacts with the monomer gas for film formation, nitrogen gas can be used alone, or a mixture with other reactive gas, for example, a mixed gas of oxygen gas and nitrogen gas can be used. .
As the inert gas, for example, argon gas, helium gas or the like can be used.

<4> Surface treatment of silicon compound vapor deposition film In the present invention, before laminating the gas barrier coating film, the surface of the silicon compound vapor deposition film is preliminarily subjected to plasma treatment to provide a plasma treatment surface. The adhesion between the film and the gas barrier coating film can be improved. The plasma-treated surface can be formed using a plasma surface treatment method in which surface modification is performed using a plasma gas generated by a gas arc discharge.
In the present invention, as the plasma gas, an inert gas such as nitrogen gas, argon gas, or helium gas, oxygen gas, or a mixture of the inert gas and oxygen gas can be used. The plasma-treated surface can be formed by performing in-line plasma treatment immediately after forming the silicon compound deposition film.

In the present invention, the plasma treatment is preferably performed in consideration of conditions such as plasma output, plasma gas type, plasma gas supply amount, treatment time, and the like. As a method for generating plasma, for example, a direct current glow discharge, a high frequency discharge, a microwave discharge, or the like can be used.
By providing the plasma treatment surface on the surface of the silicon compound vapor deposition film constituting the gas barrier laminate film of the present invention, the surface tension of the film can be increased.

<5> Gas barrier coating film In the present invention, a gas barrier composition obtained by hydrolyzing and polycondensing an alkoxide and a water-soluble polymer by a sol-gel method is further coated on the silicon compound deposition film. A dried gas barrier coating film is provided. Thereby, gas barrier property can further be improved.
As the alkoxide that can be used in the gas barrier composition, the general formula R ¹ _n M (OR ² ) _m (wherein R ¹ and R ² are organic groups having 1 to 8 carbon atoms, and M is a metal atom) And n is an integer of 0 or more, m is an integer of 1 or more, and n + m is a valence of M).
As the water-soluble polymer, either a polyvinyl alcohol resin or an ethylene / vinyl alcohol copolymer or both can be preferably used.
In the present invention, as the alkoxide represented by the general formula R ¹ _n M (OR ² ) _m , silicon, zirconium, titanium, aluminum or the like can be used as the metal atom M. Moreover, in this invention, the alkoxide of 2 or more types of different metal atoms can be mixed and used in the same solution.

In the alkoxide represented by the general formula R ¹ _n M (OR ² ) _m , specific examples of the organic group represented by R ¹ include, for example, a methyl group, an ethyl group, an n-propyl group, i Examples include -propyl group, n-butyl group, i-butyl group, sec-butyl group, t-butyl group, n-hexyl group, n-octyl group and other alkyl groups.
In the alkoxide represented by the general formula R ¹ _n M (OR ² ) _m , specific examples of the organic group represented by R ² include, for example, a methyl group, an ethyl group, an n-propyl group, i -Propyl group, n-butyl group, sec-butyl group and the like.
In the present invention, these alkyl groups may be the same or different in the same molecule.
In the present invention, as the alkoxide represented by the general formula R ¹ _n M (OR ² ) _m , for example, an alkoxysilane in which M is Si can be used. As the alkoxysilane, for example, tetramethoxy Examples thereof include silane Si (OCH ₃ ) ₄ , tetraethoxysilane Si (OC ₂ H ₅ ) ₄ , tetrapropoxysilane Si (OC ₃ H ₇ ) ₄ , tetrabutoxysilane Si (OC ₄ H ₉ ) _{4 and the} like.

Moreover, in this invention, it is preferable that content of a polyvinyl alcohol-type resin and / or an ethylene vinyl alcohol copolymer is the range of 5-500 weight part with respect to 100 weight part of total amounts of said alkoxide. In the above, if it exceeds 500 parts by weight, the formed gas barrier coating film becomes more brittle and its weather resistance and the like are also unfavorable.
In the present invention, as the polyvinyl alcohol-based resin, generally obtained by saponifying polyvinyl acetate can be used. Specific examples of the polyvinyl alcohol resin include PVA110 (degree of saponification = 98 to 99%, degree of polymerization = 1100), PVA117 (degree of saponification = 98 to 99%, degree of polymerization = 1700), PVA124 (made by Kuraray Co., Ltd.) Degree of saponification = 98-99%, degree of polymerization = 2400), PVA135H (degree of saponification = 99.7% or more, degree of polymerization = 3500), RS-110 (degree of saponification = 99%) manufactured by the same company , Degree of polymerization = 1,000), Kuraray Poval LM-20SO (degree of saponification = 40%, degree of polymerization = 2,000) manufactured by the same company, Gohsenol NM-14 (degree of saponification = 99%, degree of polymerization = 1,400) and gohsenol NH-18 (degree of saponification = 98 to 99%, degree of polymerization = 1700) and the like can be used.

  In the present invention, as the ethylene-vinyl alcohol copolymer, a saponified product of a copolymer of ethylene and vinyl acetate, that is, a product obtained by saponifying an ethylene-vinyl acetate random copolymer should be used. Can do. Such saponification products include partial saponification products in which several tens mol% of acetic acid groups remain to complete saponification products in which only several mol% of acetic acid groups remain or no acetic acid groups remain. The Although not particularly limited, it is desirable to use a saponification degree of 80 mol% or more, more preferably 90 mol% or more, and still more preferably 95 mol% or more from the viewpoint of gas barrier properties. The content of repeating units derived from ethylene in the ethylene / vinyl alcohol copolymer (hereinafter also referred to as “ethylene content”) is usually 0 to 50 mol%, preferably 20 to 45 mol%. Is preferably used. Specific examples of the ethylene / vinyl alcohol copolymer include Kuraray Co., Ltd., Eval EP-F101 (ethylene content: 32 mol%), Nippon Synthetic Chemical Industry Co., Ltd., Soarnol D2908 (ethylene content: 29 mol%). ) Etc. can be used.

  In the present invention, a silane coupling agent or the like can also be added to prepare a gas barrier composition for forming a gas barrier coating film according to the present invention. Suitable silane coupling agents include N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, N- (2- Amino group-containing silane coupling agents such as aminoethyl) -3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 2 -Epoxy group-containing silanes such as (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane Coupling agent, 3-mercaptopropi Examples include mercapto group-containing silane coupling agents such as rumethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane, and isocyanate group-containing silane coupling agents such as 3-isocyanatopropyltriethoxysilane and 3-isocyanatopropyltrimethoxysilane. .

<6> Method for Forming Gas Barrier Coating Film The gas barrier composition used in the present invention comprises hydrolysis and polycondensation of alkoxide and water-soluble polymer by sol-gel method in the presence of acid, water and organic solvent. Can be prepared.
The gas barrier composition is a two-layer laminated structure composed of a substrate / silicon compound deposited film, or a four-layer laminated structure composed of a substrate / silicon compound deposited film / gas barrier coated film / silicon compound deposited film, or It is applied onto a silicon compound vapor deposition film having a multilayer laminated structure in which a gas barrier coating film / silicon compound vapor deposition film is laminated one or more times, and is applied at 20 to 200 ° C., preferably 140 ° C. or higher. A gas barrier coating film can be formed by heat treatment at a temperature not higher than the melting point of the plastic film constituting the material for 10 seconds to 10 minutes.
Moreover, as an acid used in preparation of said gas-barrier composition, organic acids, such as mineral acids, such as a sulfuric acid, hydrochloric acid, nitric acid, and an acetic acid, tartaric acid, etc. can be used, for example. Furthermore, as the organic solvent, for example, methyl alcohol, ethyl alcohol, isopropyl alcohol, n-propyl alcohol, or the like can be used.
Further, regarding the gas barrier composition, the polyvinyl alcohol resin and / or the ethylene / vinyl alcohol copolymer is preferably in a state of being dissolved in a coating solution containing the alkoxide, the silane coupling agent, or the like. Therefore, the type of the organic solvent is appropriately selected. In the present invention, as the ethylene / vinyl alcohol copolymer solubilized in a solvent, for example, one commercially available as Soarnol (manufactured by Nippon Synthetic Chemical Co., Ltd.) can be used.
When the above gas barrier composition is applied onto a silicon compound vapor-deposited film and heated to remove the solvent and the alcohol produced by the polycondensation reaction, the polycondensation reaction is completed and a transparent gas barrier coating film is formed. The

Furthermore, since the hydroxyl group generated by hydrolysis and the silanol group derived from the silane coupling agent are bonded to the hydroxyl group on the surface of the silicon compound deposition film, the close adhesion between the silicon compound deposition film and the gas barrier coating film is good. It will be something.
By being formed as described above, the gas barrier coating film of the present invention includes a linear polymer having crystallinity and has a structure in which a large number of minute crystals are embedded in an amorphous portion. . Such a crystal structure is the same as that of a crystalline organic polymer (for example, vinylidene chloride or polyvinyl alcohol), and a polar group (OH group) is partially present in the molecule, and the cohesive energy of the molecule is high. Good gas barrier properties.
In the present invention, the silicon compound vapor-deposited film and the gas barrier coating film form, for example, a chemical bond, a hydrogen bond, or a coordinate bond by hydrolysis / co-condensation, and the adhesion between these two layers is improved. The synergistic effect can exert a better barrier effect.
In the present invention, the gas barrier composition may be applied by one or more times by a coating means such as a roll coat such as a gravure roll coater, a spray coat, dipping, a brush, a bar coat, or an applicator. With this coating, a gas barrier coating film having a dry film thickness of 0.01 to 30 μm, preferably 0.1 to 10 μm can be formed.
Next, the present invention will be specifically described with reference to examples.

[Reference Example 1]
As the substrate, a biaxially stretched polyethylene terephthalate film (thickness: 12 μm) having a corona treatment on one side was used. Further, hexamethyldisiloxane (HMDSO) was used as the monomer gas for film formation, argon gas was used as the inert gas, and nitrogen gas (N ₂ ) was used as the nitrogen-containing gas. A silicon compound (SiO _x N _y C _z ) vapor-deposited film having a thickness of 200 mm was formed on the corona-treated surface of the above biaxially stretched polyethylene terephthalate film using a low temperature plasma chemical vapor deposition apparatus under the following conditions.

(Deposition conditions)
Introduction gas amount Hexamethyldisiloxane (HMDSO): Nitrogen gas: Argon gas = 1.0: 1.5: 3.0 (unit: slm, standard liter minute)
Degree of vacuum in vacuum chamber 2-6 × 10 ^-4 Pa
Degree of vacuum in the deposition chamber 2-5 × 10 ⁻¹ Pa
Cooling / electrode drum supply power 15kW
Line speed 80m / min

Next, immediately after forming the silicon compound vapor deposition film having a thickness of 200 mm as described above, a glow discharge plasma generator is used on the surface of the silicon compound vapor deposition film, and the power is 9 kw, nitrogen gas (N ₂ ): argon gas (Ar ) = 7.0: 2.5 (unit: slm) is used, and nitrogen / argon mixed gas plasma treatment is performed at a mixed gas pressure of 8 × 10 ⁻³ Pa. A plasma-treated surface having a surface tension improved by 54 mN / m or more was formed.

Next, a gas barrier composition having the following composition was applied to the plasma-treated surface of the formed silicon compound vapor-deposited film by a gravure roll coating method, followed by heat treatment at 180 ° C. for 60 seconds to obtain a thickness of 0.3 μm (dry Gas barrier coating film of (state) was formed.
Further, on this gas barrier coating film, a silicon compound vapor deposition film having a thickness of 200 mm is formed in the same manner as described above, a plasma treated surface is formed, a gas barrier coating film is formed, and a biaxially stretched polyethylene terephthalate film / silicon compound deposited film / gas barrier coating film / silicon compound deposition layer / gas barrier coating film, to obtain a Tona Ruga gas barrier laminated film.

<Preparation of gas barrier composition>

  To the prepared mixture of polyvinyl alcohol of composition a, isopropyl alcohol and ion-exchanged water, add a hydrolyzed solution of ethyl silicate, silane coupling agent, hydrochloric acid, isopropyl alcohol and ion-exchanged water of composition b prepared in advance. And stirred to obtain a colorless and transparent composition for forming a barrier coat.

[Reference Example 2]
Gas barrier laminate film as in Reference Example 1 except that the amount of introduced gas was hexamethyldisiloxane (HMDSO): nitrogen gas: argon gas = 1.0: 3.0: 3.0 (unit: slm) Got.

[ Example 1]
Gas barrier laminate film as in Reference Example 1 , except that the amount of introduced gas was hexamethyldisiloxane (HMDSO): nitrogen gas: argon gas = 1.0: 4.5: 3.0 (unit: slm) Got.
[ Example 2]
Gas barrier laminate film as in Reference Example 1 except that the amount of introduced gas was hexamethyldisiloxane (HMDSO): nitrogen gas: argon gas = 1.0: 6.0: 3.0 (unit: slm) Got.

[Reference Example 3]
As the nitrogen-containing gas, a mixed gas of oxygen gas and nitrogen gas is used instead of nitrogen gas, and the amount of introduced gas is hexamethyldisiloxane (HMDSO): nitrogen gas: oxygen gas: argon gas = 1.0: 1. A gas barrier laminate film was obtained in the same manner as in Reference Example 1 except that 5: 0.3: 3.0 (unit: slm).

[ Example 3]
As the monomer gas for film formation, hexamethyldisilazane (HMDS) is used instead of hexamethyldisiloxane, and the flow rate of introduced gas is hexamethyldisilazane: nitrogen gas: argon gas = 0.8: 4.5: 3. A gas barrier laminate film was obtained in the same manner as in Reference Example 1 except that 0 (unit: slm) was used.

[ Example 4]
As the monomer gas for film formation, hexamethyldisilazane (HMDS) is used instead of hexamethyldisiloxane, and the flow rate of introduced gas is hexamethyldisilazane: nitrogen gas: argon gas = 0.8: 6.0: 3. A gas barrier laminate film was obtained in the same manner as in Reference Example 1 except that 0 (unit: slm) was used.

[ Example 5]
Oite Example 3, was obtained a gas barrier layered film in the same manner except that the cooling-electrode drum supplied power was 25 kW.

[Comparative Example 1]
Gas barrier laminate as in Reference Example 1 except that the amount of introduced gas was hexamethyldisiloxane (HMDSO): nitrogen gas: argon gas = 1.0: 1.0: 3.0 (unit: slm) A film was obtained.

[Comparative Example 2]
As the nitrogen-containing gas, a mixed gas of oxygen gas and nitrogen gas is used instead of nitrogen gas, and the amount of introduced gas is hexamethyldisiloxane (HMDSO): nitrogen gas: oxygen gas: argon gas = 1.0: 1. A gas barrier laminate film was obtained in the same manner as in Reference Example 1 except that 5: 0.9: 3.0 (unit: slm) was used.

[Comparative Example 3]
Instead of the nitrogen gas used as the nitrogen-containing gas that reacts with the monomer gas for film formation, oxygen gas (O ₂ ) is used, and the amount of introduced gas is hexamethyldisiloxane (HMDSO): oxygen gas: argon gas = 1. A gas barrier laminate film was obtained in the same manner as in Reference Example 1 except that 0: 1.5: 3.0 (unit: slm).

[Comparative Example 4]
Gas barrier laminate comprising biaxially stretched polyethylene terephthalate film / silicon compound deposited film / gas barrier coated film / silicon compound deposited film in the same manner as in Reference Example 2 except that the second gas barrier coated film forming step was omitted. A film was obtained.

[result]
Reference Example 1-3, the gas barrier laminate films obtained in Examples 1 to 5及 beauty Comparative Examples 1-4, using the XPS surface analyzer ESCA (UK, VG Scientific Co. ESCA LAB220I-XL), Elemental analysis of the formed silicon compound deposited film was performed.
Further, the oxygen permeability of the gas barrier laminate film was measured under the conditions of 23 ° C. and humidity 90% RH using OXTRAN 2/20 manufactured by MOCON, USA.
Furthermore, the water vapor permeability of the gas barrier laminate film was measured under conditions of 40 ° C. and humidity 90% RH using AQUATRAN manufactured by MOCON, USA.
The measurement results were as shown in Table 1 below.

As apparent from Table 1 above, all of the gas barrier laminated films of Examples 1 to 5 exhibited lower water vapor permeability than Comparative Examples 1 to 4.
Then, Reference Examples 1 to 3, the surface of the gas barrier coating film for the gas barrier laminate films of Examples 1 to 5及 beauty Comparative Examples 1 to 3, also in the plasma-treated surface for gas barrier laminate film of Comparative Example 4 Then, a polyethylene film (thickness 50 μm) was dry laminated to obtain a gas barrier laminate. About each gas-barrier laminated material, the 15-mm width sample was cut out and the laminated strength was measured with the T character peeling method (measurement speed 50mm / min) using the tensilon.
The results were as shown in Table 2 below.

As can be seen from Table 2 above, in the gas barrier laminate samples using the gas barrier laminate films of Examples 1 to 5 , high lamination strength was obtained. On the other hand, in the sample using the gas barrier laminate film of Comparative Example 4, delamination easily occurred with a weak force.

It is a schematic sectional drawing which shows the layer structure of the gas barrier laminated film of this invention. It is a schematic block diagram of the low temperature plasma chemical vapor deposition apparatus used for the method of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Base material 2, 4 Silicon compound vapor deposition film 3, 5 Gas barrier coating film 20 Deposition film 21 Low-temperature plasma chemical vapor deposition apparatus 22 Vacuum chamber 23 Unwinding rolls 24, 33 Auxiliary roll 25 Cooling / electrode drums 26, 27 Gas Supply device 28 Raw material volatilization supply device 29 Raw material supply nozzle 30 Glow discharge plasma 31 Power source 32 Magnet 34 Winding roll 35 Vacuum pump 36 Deposition chamber

Claims (4)

A silicon compound deposition film and a gas barrier coating film are alternately laminated in this order twice or more on one surface of a plastic film substrate, and the gas barrier coating film becomes the outermost layer. The silicon compound vapor deposition film is formed by plasma chemical vapor deposition, and the composition of the silicon compound vapor deposition film is SiO _x N _y C _z {0.4 <x <1.0 , 20/29 ≦ y <1.5, 1.0 <z <2.0, 0.1 <y / (x + y + z) <0.5}. The gas barrier coating film has a general formula R ¹ _n M (OR ² ) _m (wherein R ¹ and R ² are organic groups having 1 to 8 carbon atoms, M is a metal atom, and n is 0 or more. 1 or more alkoxides represented by (M + is an integer of 1 or more, n + m is the valence of M), and polyvinyl alcohol and / or ethylene / vinyl alcohol are hydrolyzed by a sol-gel method. The gas barrier laminate film according to claim 1, which is a film formed by applying a gas barrier composition obtained by decomposition and polycondensation and drying the composition. A step (a) of laminating a silicon compound vapor-deposited film by plasma chemical vapor deposition on one surface of a substrate made of a plastic film, and a step of laminating a gas barrier coating film on the silicon compound vapor-deposited film (b) ) And alternately, repeatedly or twice or more, wherein the method for producing a gas barrier laminate film according to claim 1 or 2,
In the step (a), a film-forming mixed gas composition comprising a film-forming monomer gas comprising at least one organic silicon compound, a nitrogen-containing gas that reacts with the film-forming monomer gas, and an inert gas Use
The composition of the silicon compound deposition film is SiO _x N _y C _z {0.4 <x <1.0 , 20/29 ≦ y <1.5, 1.0 <z <2.0, 0.1 <y / (x + y + z) <0.5}. The said manufacturing method characterized by adjusting the composition ratio of this mixed gas composition for film-forming.   The manufacturing method according to claim 3, wherein the manufacturing method is a roll-to-roll method.

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