JP5318435B2 - 半導体ウエハの裏面研削用粘着シート及びこの裏面研削用粘着シートを用いる半導体ウエハの裏面研削方法 - Google Patents
半導体ウエハの裏面研削用粘着シート及びこの裏面研削用粘着シートを用いる半導体ウエハの裏面研削方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2423/00—Presence of polyolefin
- C09J2423/006—Presence of polyolefin in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2431/00—Presence of polyvinyl acetate
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2433/00—Presence of (meth)acrylic polymer
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
- C09J2433/006—Presence of (meth)acrylic polymer in the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
下記条件で半導体ウエハの裏面研削用粘着シートを作製し、高さ200μmのバンプの形成された厚さ750μm(バンプ含まず)の直径8インチの半導体ウエハの表面に貼り合わせる。粘着シートの貼り合わせには日東精機(株)製DR−3000IIを用いる。
半導体ウエハ表面に粘着シートを貼り合わせた後に、ウエハの裏面をディスコ(株)製シリコンウエハ研削機により厚さ250μmまで研削を行う。
半導体ウエハの裏面研削終了後、粘着シート側から460mJ/cm2の紫外線を照射して粘着剤層を硬化させる。そして、粘着シート剥離用シートを貼り付けた後に、この剥離用シートとともに粘着シートを剥離する。粘着シートの剥離には、日東精機(株)製HR−8500IIを用いる。
実施例および比較例の粘着シートの粘着剤は以下のものを用いる。
原料樹脂ペレットを型枠に入れ、120〜160℃の熱をかけて、厚さ2mmのプレスシートを作製する。作製した試験片を14mmになるように重ね合わせる。重ねた後、JIS−K−6301−1995に規定されている方法により測定する。
下記に規定した条件以外は、すべてJIS Z−0237−1991に規定される方法により測定する。SUS304−BA板の表面に粘着シートを貼り付け、1時間放置する。粘着シートの一部をチャックし、剥離180度、剥離速度300mm/minでSUS304−BA板の表面からシートを剥離する際の応力を測定し、N/25mmの粘着力に換算する。
基材の樹脂として、ポリエチレンテレフタレートを用いた。中間層の樹脂としては、JIS−A硬度60のエチレン−酢酸ビニル共重合体樹脂を用いた。これらを、ラミネート法により、厚さ38μmの基材と厚さ450μmの中間層の積層体を作製した。次いで、この中間層の粘着剤層を設ける面にコロナ処理を施し、厚みが35μmである粘着剤層を中間層のコロナ処理を施した面に転写した。転写後、45℃×24時間加熱した後、室温まで冷却することにより半導体ウエハの裏面研削用粘着シートを得た。粘着シートの粘着力は8.5N/25mmであった。
基材の樹脂として、ポリエチレンテレフタレートを用いた。中間層の樹脂としては、JIS−A硬度68のエチレン−酢酸ビニル共重合体樹脂を用いた。これらを、ラミネート法により、厚さ38μmの基材と厚さ500μmの中間層の積層体を作製した。次いで、この中間層の粘着剤層を設ける面にコロナ処理を施し、厚みが35μmである粘着剤層を中間層のコロナ処理を施した面に転写した。転写後、45℃×24時間加熱した後、室温まで冷却することにより半導体ウエハの裏面研削用粘着シートを得た。粘着シートの粘着力は9.2N/25mmであった。
基材の樹脂として、ポリエチレンテレフタレートを用いた。中間層の樹脂としては、JIS−A硬度60のエチレン−酢酸ビニル共重合体樹脂を用いた。これらを、ラミネート法により、厚さ38μm基材と厚さ350μmの中間層の積層体を作製した。次いで、この中間層の粘着剤層を設ける面にコロナ処理を施し、厚みが45μmである粘着剤層を中間層のコロナ処理を施した面に転写した。転写後、45℃×24時間加熱した後、室温まで冷却することにより半導体ウエハの裏面研削用粘着シートを得た。粘着シートの粘着力は6.3N/25mmであった。
基材の樹脂として、ポリエチレンテレフタレートを用いた。中間層の樹脂として、JIS−A硬度72のエチレン−酢酸ビニル共重合体樹脂を用い、ラミネート法により、厚さ38μmの基材と厚さ550μmの中間層の積層体を作製した。次いで、この中間層の粘着剤層を設ける面にコロナ処理を施し、厚みが45μmである粘着剤層を中間層のコロナ処理を施した面に転写した。転写後、45℃×24時間加熱した後、室温まで冷却することにより半導体ウエハの裏面研削用粘着シートを得た。粘着シートの粘着力は10.2N/25mmであった。
基材の樹脂として、ポリエチレンテレフタレートを用いた。中間層の樹脂としては、JIS−A硬度38のエチレン−酢酸ビニル共重合体樹脂を用いた。これらを、ラミネート法により、厚さ38μmの基材と厚さ450μmの中間層の積層体を作製した。次いで、この中間層の粘着剤層を設ける面にコロナ処理を施し、厚みが40μmである粘着剤層を中間層のコロナ処理を施した面に転写した。転写後、45℃×24時間加熱した後、室温まで冷却することにより半導体ウエハの裏面研削用粘着シートを得た。粘着シートの粘着力は7.4N/25mmであった。
基材の樹脂として、ポリエチレンテレフタレートを用いた。中間層の樹脂としては、JIS−A硬度58のエチレン−酢酸ビニル共重合体樹脂を用いた。これらを、ラミネート法により、厚さ38μmの基材と厚さ280μmの中間層の積層体を作製した。次いで、この中間層の粘着剤層を設ける面にコロナ処理を施し、厚みが25μmである粘着剤層を中間層のコロナ処理を施した面に転写した。転写後、45℃×24時間加熱した後、室温まで冷却することにより半導体ウエハの裏面研削用粘着シートを得た。粘着シートの粘着力は4.8N/25mmであった。
基材の樹脂として、ポリエチレンテレフタレートを用いた。中間層の樹脂としては、JIS−A硬度38のエチレン−酢酸ビニル共重合体樹脂を用いた。これらを、ラミネート法により、厚さ38μmの基材と厚さ250μmの中間層の積層体を作製した。次いで、この中間層の粘着剤層を設ける面にコロナ処理を施し、厚みが20μmである粘着剤層を中間層のコロナ処理を施した面に転写した。転写後、45℃×24時間加熱した後、室温まで冷却することにより半導体ウエハの裏面研削用粘着シートを得た。粘着シートの粘着力は4.2N/25mmであった。
2 中間層
3 粘着剤層
4 半導体ウエハの裏面研削用粘着シート
5 半導体ウエハの回路表面
6 半導体ウエハ
Claims (6)
- 半導体ウエハの裏面を研削する際にその回路形成表面に貼付ける半導体ウエハの裏面研削用粘着シートであって、
前記回路形成表面側より粘着剤層、中間層、基材で構成され、
前記中間層の厚みが、300〜600μmであり、
前記中間層がJIS−A硬度が55より大きく80より小さいことを特徴とする半導体ウエハの裏面研削用粘着シート。 - 前記中間層が、密度が0.89g/cm3未満である低密度ポリエチレン、酢酸ビニル単位の含有量が30〜50重量%であるエチレン−酢酸ビニル共重合体及びアルキルアクリレート単位の含有量が30〜50重量%であり、アルキル基の炭素数が1〜4であるエチレン−アルキルアクリレート共重合体から選ばれた少なくとも1種の共重合体を含む請求項1記載の半導体ウエハの裏面研削用粘着シート。
- 前記粘着剤層が、アクリル系粘着剤からなる請求項1または2に記載の半導体ウエハの裏面研削用粘着シート。
- 前記粘着剤層の厚みが、30〜60μmである請求項1〜3のいずれかに記載の半導体ウエハの裏面研削用粘着シート。
- 前記半導体ウエハの裏面研削用粘着シートの粘着力が、5〜15N/25mmである請求項1〜4のいずれかに記載の半導体ウエハの裏面研削用粘着シート。
- 請求項1〜5のいずれかに記載の半導体ウエハの裏面研削用粘着シートを、ウエハの回路形成表面に貼付けてウエハの裏面を研削する半導体ウエハの裏面研削方法。
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AT09002783T ATE554149T1 (de) | 2008-02-29 | 2009-02-26 | Klebefolie zum abschleifen der oberfläche eines halbleiterwafers und verfahren zum abschleifen der oberfläche eines halbleiterwafers unter verwendung der klebefolie |
TW098106244A TWI459455B (zh) | 2008-02-29 | 2009-02-26 | 用於研磨半導體晶圓背面之黏著片材及使用其之研磨半導體晶圓背面之方法 |
EP09002783A EP2096153B1 (en) | 2008-02-29 | 2009-02-26 | Adhesive sheet for grinding back surface of semiconductor wafer and method for grinding back surface of semiconductor wafer using the same |
CN2009101186488A CN101518887B (zh) | 2008-02-29 | 2009-02-27 | 用于研磨半导体晶片背面的粘合片以及使用其研磨半导体晶片背面的方法 |
US12/394,762 US20090221215A1 (en) | 2008-02-29 | 2009-02-27 | Adhesive sheet for grinding back surface of semiconductor wafer and method for grinding back surface of semiconductor wafer using the same |
KR1020090016880A KR101294435B1 (ko) | 2008-02-29 | 2009-02-27 | 반도체 웨이퍼의 배면 연마용 점착 시트 및 이를 이용한 반도체 웨이퍼의 배면 연마 방법 |
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CN103026469B (zh) * | 2010-07-28 | 2016-06-15 | 三井-杜邦聚合化学株式会社 | 层合膜及使用其的半导体制造用膜 |
JP6230354B2 (ja) * | 2013-09-26 | 2017-11-15 | 株式会社ディスコ | デバイスウェーハの加工方法 |
JP6595296B2 (ja) * | 2015-10-19 | 2019-10-23 | デクセリアルズ株式会社 | 保護テープ、及び半導体装置の製造方法 |
JP6906843B2 (ja) * | 2017-04-28 | 2021-07-21 | 株式会社ディスコ | ウェーハの加工方法 |
CN110663106B (zh) | 2017-05-18 | 2023-09-22 | 株式会社迪思科 | 在加工晶圆中使用的保护片、用于晶圆的处理系统以及晶圆与保护片的组合体 |
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CN101518887B (zh) | 2013-04-24 |
EP2096153B1 (en) | 2012-04-18 |
EP2096153A3 (en) | 2010-07-21 |
TWI459455B (zh) | 2014-11-01 |
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