JP5375312B2 - Polycrystalline silicon production equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing polycrystal silicon, in which the productivity is improved and the cost is reduced. <P>SOLUTION: In the apparatus for manufacturing polycrystal silicon, a carbon core material 16 arranged in a reaction vessel 2 is energized and heated, and polycrystal silicon S is deposited on the surface of the core material 16 by reaction of a raw material gas. The core material 16 has a cross-sectional shape formed flat and has planes, on which polycrystal silicon S is deposited, arranged vertically. A receiving means to receive polycrystal silicon S dropping from the core material 16 is installed under the core material 16, and is installed with a chamber 4 for carrying out polycrystal silicon separable from the reaction vessel 2. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a polycrystalline silicon manufacturing apparatus, and more particularly to a polycrystalline silicon manufacturing apparatus that facilitates the removal of precipitated polycrystalline silicon.

  Siemens method, fluidized bed process, and the like are generally known as manufacturing processes for high-purity polycrystalline silicon, but their main application is semiconductor applications. As for purposes other than semiconductor applications, solar cell applications, which are promising candidates for preventing global warming, are in the spotlight. Polycrystalline silicon required for solar cell applications does not require higher purity than semiconductor applications, but is required to be cheaper. In recent years, it has also been proposed to produce polycrystalline silicon by metallurgically purifying silicon for solar cells. However, it is difficult to stably obtain the required high purity polycrystalline silicon by metallurgical refining.

  Therefore, proposals have been made to improve the productivity by taking advantage of the Siemens method that can obtain a high-purity product. For example, in the polycrystalline silicon manufacturing apparatus described in Patent Document 1, a pair of electrodes are arranged in a reaction vessel whose upper side can be opened and closed by a disk-shaped lid, and a tubular shape is formed between these electrodes. A polycrystalline silicon seed rod is installed. Then, the seed rod is energized and heated with the lid closed, and a reactive gas is supplied to the wall surface to deposit polycrystalline silicon. Then, the lid is removed and the polycrystalline silicon is taken out. In addition, the seed rod is doped with impurities for solar cell applications.

  In addition, in the polycrystalline silicon manufacturing apparatus described in Patent Document 2, a cylindrical hollow body having a thermal expansion coefficient different from that of polycrystalline silicon, such as molybdenum, tungsten, or carbon, is provided in the reaction vessel along the vertical direction. In addition, a heater is provided inside the hollow body. And after heating a hollow body with this heater and depositing polycrystalline silicon on the outer surface of the hollow body, heating by the heater is stopped and the hollow body is cooled by a nitrogen purge or the like. Using the difference in thermal expansion between silicon and the hollow body, the polycrystalline silicon is peeled off from the hollow body and dropped. A recovery container that receives polycrystalline silicon dropped from the hollow body is provided below the reaction container, and the reaction container and the recovery container can be opened and closed by a valve.

Japanese translation of PCT publication No. 2008-509070 Special table 2008-535758

In the invention presented in Patent Document 1, since the lid is opened and closed to attach the seed rod and remove the polycrystalline silicon, it becomes a so-called batch operation, and there is still a problem in improving productivity, There is a need for further improvements to reduce costs.
In addition, the polycrystalline silicon used as a seed rod is doped with impurities and energized to obtain Joule heat. However, it is technically difficult to make the dopant concentration uniform throughout the seed rod, and the dopant concentration is not uniform. When using a different seed rod, there is also a problem that the surface temperature becomes non-uniform.
On the other hand, in the invention described in Patent Document 2, since the heating of the hollow body by the heater and the cooling by the nitrogen purge are repeated by batch processing, extra electric power such as heating and heating after cooling the hollow body is used. As a result, the amount of power used per unit weight (unit power consumption) is larger than the amount of polycrystalline silicon produced, and the cost tends to increase.
The present invention has been made in view of such circumstances, and an object of the present invention is to provide a polycrystalline silicon manufacturing apparatus that improves productivity and reduces costs.

The polycrystalline silicon production apparatus of the present invention is a polycrystalline silicon production apparatus in which a purified carbon core material disposed in a reaction vessel is energized and heated, and polycrystalline silicon is deposited on the surface by reaction of a raw material gas. The core material is provided at the lower end portion of the electrode portion provided through the wall of the body portion of the reaction vessel from above, and the core material has a flat cross section and is formed of polycrystalline silicon. A plane for precipitation is arranged along the vertical direction, and a receiving means for receiving polycrystalline silicon falling from the core material is provided below the core material, and the receiving means is a polycrystal capable of being isolated from the reaction vessel. A silicon unloading chamber is provided.

That is, when polycrystalline silicon is deposited on the surface by energizing and heating the core material, the contact surface with the core material is heated to a high temperature, but the outer surface is in contact with the atmosphere of the reaction vessel If the temperature is low and the amount of precipitation on the core increases, thermal strain due to temperature distribution in the thickness direction increases. In addition, since the core material has a flat cross section, the precipitation of polycrystalline silicon on the outer surface thereof is not uniform in the circumferential direction, but is deposited in a large amount on the plane along the vertical direction, and the amount of precipitation is on both side edges of the plane. There are few, and it is in the state which is easy to concentrate stress locally. Moreover, since the effect | action by own gravity becomes large with the increase in the amount of precipitation, a crack arises from the both-sides edge part of a plane, and it peels and falls from a core material. The dropped polycrystalline silicon may be received by the receiving means below the core material, taken out of the chamber and processed.
Moreover, the core material is made of carbon, and this is energized and heated, and no other heat source is required.
By keeping the core material in an electrically heated state, the deposition and peeling of polycrystalline silicon are repeated, enabling continuous production and less wasteful power consumption.

In the polycrystalline silicon manufacturing apparatus of the present invention, the core material may be a flat plate, and the flat surface may be the front and back surfaces.
By making the core material a flat plate, a plane on which polycrystalline silicon is deposited can be easily arranged.

Moreover, in the polycrystalline silicon manufacturing apparatus of the present invention, both ends of the core material are supported by the electrode portions, and the both end portions are narrow portions having a narrower width than the intermediate portion. Good.
In the middle part of the core material, the thickness of the deposited polycrystalline silicon is not uniform in the circumferential direction, but the cross-section is flattened. When the temperature is higher than that of the middle portion, polycrystalline silicon is deposited in a thick and nearly circular shape, and is strong and difficult to break, enabling long-term use.

  According to the polycrystalline silicon manufacturing apparatus of the present invention, it is possible to repeatedly cause deposition and peeling of polycrystalline silicon on the plane of the core material simply by energizing and heating the core material, thereby wasting power consumption. Therefore, it is possible to continuously produce polycrystalline silicon. Then, by transferring the fallen polycrystalline silicon to the chamber of the receiving means, it is possible to simultaneously manufacture new polycrystalline silicon in the reaction vessel and subsequent processing of the removed polycrystalline silicon. Productivity can be improved and costs can be reduced.

1 is a schematic diagram showing a first embodiment of a polycrystalline silicon manufacturing apparatus according to the present invention. It is an arrow line view which follows the AA line of FIG. It is an enlarged front view of the core material of FIG. 1, and its holding | maintenance part. FIG. 4 is a top view of FIG. 3. It is sectional drawing which expands and shows the electrode part of FIG. 1, (b) is sectional drawing which follows the DD line | wire of (a). It is sectional drawing which follows the BB line of FIG. It is a schematic diagram which shows 2nd Embodiment of the polycrystalline-silicon manufacturing apparatus which concerns on this invention. It is an arrow line view which follows the EE line of FIG. It is the enlarged view which looked at the core material of FIG. 7, and its holding part along the plane of a core material.

Embodiments of a polycrystalline silicon manufacturing apparatus according to the present invention will be described below with reference to the drawings.
1 to 5 show a first embodiment. As shown in FIGS. 1 and 2, the polycrystalline silicon manufacturing apparatus 1 according to the first embodiment includes a reaction vessel 2 in which polycrystalline silicon S is deposited, and a pair connected to the front and rear of the lower portion of the reaction vessel 2. Chambers 3 and 4, a valve 5 for opening and closing between the reaction vessel 2 and both chambers 3 and 4, and a valve 7 for opening and closing the carry-in / out port 6 of both chambers 3 and 4.
The reaction vessel 2 includes a transfer tunnel portion 8 installed on the floor, a cylindrical straight body portion 9 extending upward from an intermediate position in the length direction of the tunnel portion 8, and the straight body portion 9. It is set as the structure by which the trunk | drum 10 arrange | positioned horizontally at the upper end was connected integrally.

  A rail 11 is laid inside the tunnel portion 8 along the length direction of the tunnel portion 8, and the tray 12 can slide on the rail 11. The chambers 3 and 4 are connected to both ends of the tunnel portion 8, and a conveyor 13 in which a plurality of rollers are arranged inside is installed. When the valve 5 between the tunnel portions 8 is opened, the inside of the tunnel portion 8 A conveyor 13 is arranged on the extension of the rail 11 in the length direction so that the tray 12 can be transferred while sliding between the two. Moreover, the carry-in / out port 6 of both the chambers 3 and 4 is formed on the extension of the conveyor 13 on the opposite side to the connection part with the tunnel part 8.

Therefore, the conveyor 13 in both chambers 3 and 4 and the rail 11 in the tunnel portion 8 are arranged in a straight line, and the carry-in / out port 6 of both the chambers 3 and 4 is arranged on the extension, and one chamber 3 The tray 12 can be carried into the conveyor 13 from the carry-in / out entrance 6 and can be transferred from the conveyer 13 in the other chamber 4 to the carry-in / out entrance 6 via the rail 11 in the tunnel portion 8. Yes. In the example shown in FIG. 1, the tray 12 is transported from the right chamber 3 of the tunnel portion 8 to the left chamber 4, one for each chamber 3, 4, and inside the tunnel portion 8. The three trays 12 are arranged respectively.
In order to prevent contamination of silicon, the rail 11 is made of quartz, and the tray 12 is made of carbon.

And the trunk | drum 10 is connected to the midway position of the length direction of the tunnel part 8 via the cylindrical straight trunk | drum 9 along an up-down direction. The body part 10 is provided with a plurality of pairs of electrode parts 14 connected to an external power source (not shown) penetrating through the wall of the body part 10 from above, and at the lower ends of these electrode parts 14 The core material holder 15 is provided with a core material 16 so as to communicate between the pair of electrode portions 14. The core material holder 15 and the core material 16 are made of carbon and purified.
As shown in FIGS. 3 and 4, the core material 16 is formed of a belt-like flat plate as a whole, and a narrow width portion 17 formed by gradually decreasing the width toward the tip is formed at both ends thereof. Has been.
The core material holder 15 holds the tip of the narrow portion 17 of the core material 16, and a receiving portion 18 that supports the narrow portion 17 from below is integrally formed. By holding both ends of the core material 16 in the core material holder 15, the core materials 16 are parallel to each other in the body portion 10 along the horizontal direction and side by side. In this state, the front and back planes 19 of each core member 16 are arranged along the vertical direction.
In order to allow thermal expansion of the core material 16, the core material holder 15 holds the core material 16 in a state in which a space is secured in both ends of the core material 16 and the core material 16 can be moved slightly. It has become.

A plurality of guide plates 21 projecting from the lower portion of the body portion 10 and the inner wall surface of the straight body portion 9 are provided below the core members 16. These guide plates 21 are provided so as to be inclined downward from the inner wall surface of the body part 10 and the straight body part 9, and receive and slide on the upper surface the polycrystalline silicon falling from above as described later, It is guided to the central part of the cylindrical straight body part 9. A wear-resistant coating made of cemented carbide (tungsten carbide) or the like is formed on the upper surface of each guide plate 21.
The body portion 10 is connected with a source gas supply pipe 22, an exhaust gas pipe 23, and a gas supply pipe 24 and a gas discharge pipe 25 for replacing the inside with an inert gas or the like during maintenance. The chambers 3 and 4 are also provided with a gas supply pipe 26 that is alternatively connected to the inert gas supply system and the hydrogen gas supply system, and a gas discharge pipe 27 that discharges the internal gas. Yes. Each of these pipes is opened and closed by a valve 28.
In addition, a door 29 that can be opened and closed is provided on the side of the body portion 10 so that the electrode portion 14 and the core material 16 of the reaction vessel 2 can be disassembled and assembled. A possible viewing window 29a is provided.
As shown in FIG. 5, the electrode portion 14 is composed of a metal tube 31 that penetrates the wall of the body portion 10, and a cylindrical support bracket portion 32 that is fixed to the tip of the metal tube 31. In addition, an insulating material 33 is provided so as to surround the periphery of the metal tube 31 in the through portion with the wall of the body portion 10. In addition, a partition wall 34 is provided inside the metal tube 31 and the support bracket portion 32, and the partition wall 34 circulates in the support bracket 32 from a space on one side half of the metal tube 31 as indicated by an arrow. Thus, a cooling flow path 35 for circulating the cooling water is formed so as to circulate again in the space on the other side of the metal pipe 31. The core material holder 15 is formed with a threaded portion at an end thereof, and is screwed into the internal threaded portion of the inner peripheral portion of the support bracket portion 32 and is fixed by a nut member 36.
Moreover, the wall of the reaction vessel 2, the door 29, the tunnel portion 8, and the straight body portion 9 have a jacket structure, and cooling water is circulated therein. Reference numeral 37 in FIG. 5 indicates a cooling flow path formed on the wall of the reaction vessel 2.

Next, a method for producing polycrystalline silicon using the thus constructed polycrystalline silicon production apparatus 1 will be described.
First, an empty tray 12 is placed on the rail 11 in the tunnel portion 8 below the straight body portion 9. Further, the next tray 12 is prepared in the tunnel portion 8 and in the chamber 3 on the entrance side. Further, cooling water for cooling is circulated through the reaction vessel 2, the tunnel portion 8, the straight body portion 9, and the metal pipe 31.
Then, when the core material 16 in the reaction vessel 2 is energized from the electrode portion 14 to generate heat, the core material 16 is heated, and a source gas containing trichlorosilane and hydrogen gas is supplied from the source gas supply pipe 22 from above the core material 16. While the source gas flows while contacting the surface of the core material 16, polycrystalline silicon S is deposited on the surface of the core material 16. The exhaust gas after the reaction is discharged outside from the exhaust gas pipe 23.

  When the supply of the source gas is continued, the polycrystalline silicon S grows in the radial direction of the core material 16. In this case, the core 16 is flat and the cross section is flat, and the front and back planes 19 are arranged along the vertical direction, so that the polycrystalline silicon S does not grow in a columnar shape, As shown by a chain line in FIG. 6, it grows to have a flat elliptical cross section. That is, in the middle part of the height of the plane 19 along the vertical direction, the reaction gas is sufficiently heated from the plane 19 and grows thick, but at the upper and lower ends, heating from a limited surface of the side edge 40 is performed. Therefore, the growth does not proceed, and as a result, the cross section of the polycrystalline silicon S becomes a flat ellipse. Therefore, the deposited portions on both side edge portions 40 of the core material 16 are thin, and the sharp side edge portions 40 of the core material 16 are disposed inside, so that stress is easily concentrated.

On the other hand, the inner side of the deposited polycrystalline silicon S is heated to, for example, 1000 ° C. or more by the core material 16, but the outer surface is in contact with the inner atmosphere of the reaction vessel 2, and heating means is provided in the inner atmosphere. Since this is not done, temperature distribution occurs between the inside and outside as precipitation proceeds. In particular, since the cooling water flows through the wall of the reaction vessel 2, the temperature distribution of the polycrystalline silicon S becomes large. The temperature distribution causes thermal strain, and stress due to the thermal strain concentrates on the thin portion on the side edge portion 40 of the core material 16.
Moreover, since the core material 16 is flat and the front and back planes 19 are arranged along the vertical direction, its own gravity acts on the polycrystalline silicon S deposited on the plane 19 downward along the plane 19. .
For this reason, as shown in FIG. 6, a crack C is generated in the polycrystalline silicon S from the interface with the core material 16 at the side edge portion 40 of the core material 16, and the crack C is developed and divided. When the silicon S cannot withstand its own gravity, the silicon S peels off from the core material 16 and falls.
When polycrystalline silicon is deposited in a cylindrical shape with an equal thickness, distortion that is partially concentrated is less likely to occur. This is because the thickness of the silicon S is not uniform in the circumferential direction of the core material 16, so that distortion is likely to occur, and peeling from the core material 16 becomes easy.

The lump of the polycrystalline silicon S that has fallen is brought to the center of the straight body part 9 and collides with the guide plate 21 disposed from the lower part of the body part 10 to the straight body part 9 and falls onto the tray 12 below. To do.
Since the core material 16 from which the polycrystalline silicon S has been peeled is in a state of being heated by energization, new polycrystalline silicon is deposited on the surface of the core material 16 when the raw material gas contacts and reacts. In the same manner as described above, the polycrystalline silicon S grows around the core material 16, and then peels off from the core material 16. Thereafter, this growth and separation are alternately repeated.
In addition, since the wear-resistant coating is formed on the upper surface of the guide plate 21 at the position where the core 16 is dropped, damage from the impact of dropping the silicon can be prevented, and contamination can be prevented. Can be prevented.

On the other hand, the trays 12 having received the polycrystalline silicon S are sequentially sent one by one and are taken out from the chamber 4. At this time, the valves 7 of the carry-in / out entrances 6 of both the chambers 3 and 4 are closed, the both valves 5 of the tunnel unit 8 are opened, and the tray 12 is moved by the conveyor 13 of the entrance-side chamber 3, whereby the tunnel unit 8. The inner tray 12 is fed into the chamber 4 on the outlet side. Next, both the chambers 3 and 4 are isolated from the reaction vessel 2 by closing the valves 5 at both ends of the tunnel portion 8. Then, the atmosphere in both chambers 3 and 4 is replaced with an inert gas, thereby cooling the polycrystalline silicon S of the tray 12 in the chamber 4 on the outlet side, and then opening the valve 7 of the carry-in / out port 6, A tray 12 loaded with polycrystalline silicon S is carried out in the chamber 4 on the outlet side, and a new empty tray 12 is carried in the chamber 3 on the inlet side. Thereafter, the valve 7 at the carry-in / out port 6 of both the chambers 3 and 4 is closed, and the internal atmosphere is replaced with hydrogen gas to prepare for the next carry-in / out. Since this hydrogen gas is a part of the source gas, there is no problem of contamination even if it is mixed in the tunnel portion 8.
In this first embodiment, the receiving means for receiving polycrystalline silicon is provided by the chambers 3 and 4, the tunnel portion 8 and the valves 5 and 7 for opening and closing them, the conveyor 13 installed inside, the rail 11 and the tray 12. Composed.

In this manner, the deposition of the polycrystalline silicon S on the core material 16 and the separation from the core material 16 are repeated in the body portion 10, and the tray 12 is dropped while being fed one by one. The operation of sequentially discharging the polycrystalline silicon S is performed continuously, whereby the polycrystalline silicon can be continuously produced without stopping the operation. In this series of production steps, there is no need to carry out the operation of collecting the polycrystalline silicon S from the body portion 10 and the operation of installing the core material in the middle, and only the loading and unloading of the tray 12 is repeated. Will improve dramatically.
In addition, since both ends of the core material 16 are narrow portions 17 and have high resistance, the temperature is higher than the intermediate portion in the length direction. Therefore, as shown in FIG. 3 and FIG. A large amount of crystalline silicon S is deposited and the strength is high, and since it is deposited in a shape close to a circular shape compared to the middle portion of the core material 16, it is less likely to be distorted. is there.

7 to 9 show a second embodiment of the present invention. In the polycrystalline silicon production apparatus 41 of the second embodiment, the reaction vessel 42 is a vertical type that is long in the vertical direction, and the strip-like core material 16 is vertically arranged therein. In this case, the core material 16 is arranged at intervals in the circumferential direction of the reaction vessel 42. The electrode portion 14 penetrates the wall of the reaction vessel 42 in the radial direction, and the core material holder 15 at the tip of the electrode portion 14 is arranged such that the core material 16 is placed on the lower core material holder 15. The core material 16 is held. Therefore, in the second embodiment, the receiving portion 18 is formed in the lower core material holder 15, and the upper core material holder 15 holds the core material 16 in a state in which thermal expansion upward of the core material 16 is allowed. doing.
In the second embodiment, a chamber 44 is attached to the lower end of the reaction vessel 42 via a valve 43, and the chamber 44 is provided with a mesh-like partition plate 45 on the way. A bulk of the polycrystalline silicon S is received above the plate 45, and a polymer receiving portion 46 that stores the polymer produced in the reaction vessel 42 together with the polycrystalline silicon S is connected via the valve 47 below the partition plate 45. ing. Further, a pressurized gas introduction pipe 48 and a polymer extraction pipe 49 are connected to the polymer receiving portion 46 and are opened and closed by valves 50 and 51, respectively.
In addition, the same code | symbol is attached | subjected to 1st Embodiment and a common part, and description is abbreviate | omitted. Also in the second embodiment, the reaction vessel 42, the valve 43, and the chamber 44 have a jacket structure and are cooled with cooling water or the like.

  Also in the polycrystalline silicon manufacturing apparatus 41 of the second embodiment, since the plate-like core material 16 has the front and back planes 19 arranged along the vertical direction, as in the case of the first embodiment, polycrystalline The deposited thickness of the silicon S is not uniform in cross section, and the stress is likely to be concentrated locally on the side edge portion 40 (see FIG. 6) of the core material 16, and the inside and outside of the deposited polycrystalline silicon S The thermal distribution is caused by the temperature distribution between and the stress due to the thermal strain is concentrated on the side edge portion 40 of the core material 16, and the side edge portion 40 of the core material 16 is combined with the action of gravity of the polycrystalline silicon S. In the vicinity, a crack C occurs in the polycrystalline silicon S, and the crack C develops, and the polycrystalline silicon S peels off from the core material 16 and falls.

Further, the valves 43 and 47 at the lower end of the reaction vessel 42 are normally opened, and the dropped polycrystalline silicon S is stored in the chamber 44 below the reaction vessel 42. When the polycrystalline silicon S accumulates in the chamber 44, the upper and lower valves 43 and 47 are closed, the inside of the chamber 44 is replaced with an inert gas, and then the valve 7 at the front carry-in / out port 6 is opened to take out the polycrystalline silicon S. . Meanwhile, in the reaction vessel 42, the polycrystalline silicon S falling from the core material 16 is stored on the valve 43. When the inside of the chamber 44 is emptied, the front valve 7 is closed and the inside of the chamber 44 is made a hydrogen atmosphere, then the valves 43 and 47 are opened, and the polycrystalline silicon S on the valve 43 is placed in the chamber 44. Drop into. By repeating this, polycrystalline silicon is continuously produced.
In the case of the second embodiment, the chamber 44 below the reaction vessel 42 and the valves 43 and 7 constitute a polycrystalline silicon receiving means. The polymer flowing along the walls of the reaction vessel 42 and the chamber 44 flows down from the partition plate 45 and is collected in the polymer receiving portion 46. The accumulated polymer is extracted by supplying the pressurized gas to the polymer receiving portion 46 by opening both the valves 50 and 51 of the pressurized gas supply pipe 48 and the polymer extraction pipe 49 with the valve 47 closed. It can be extracted from the tube 49.

In addition, this invention is not limited to the said embodiment, A various change can be added in the range which does not deviate from the meaning of this invention.
For example, although the core material is formed of a strip-shaped flat plate, it may not necessarily be a flat plate but may have a flat elliptical cross section as long as the cross section is flat. In addition, the flat surface does not hinder not only a flat surface but also a slightly convex or concave curved surface. Furthermore, the plane does not necessarily have to be parallel to the vertical direction as long as the plane is arranged along the vertical direction.
Moreover, in the said embodiment, although the lump of the polycrystalline silicon which falls from a core material was guided with the guide plate, in 1st Embodiment, a straight body part and in 2nd Embodiment, the lower part of a trunk | drum part is faced down, and diameter reduction is carried out. The guide plate may be omitted by forming it into a tapered shape.
Further, the function of the polymer receiving portion as shown in the second embodiment can also be provided in the first embodiment. In this case, a polymer receiving portion may be provided in the tunnel portion 8 at a position (for example, a position below the tray) that does not obstruct the running of the tray immediately below the straight body portion 9.
Further, SiC coating may be applied to the inner peripheral surface of the reaction vessel, the electrode section, the core material holder, the tray, etc. to prevent contamination.

DESCRIPTION OF SYMBOLS 1 Polycrystalline silicon manufacturing apparatus 2 Reaction container 3, 4 Chamber 5 Valve 6 Carrying in / out opening 7 Valve 8 Tunnel part 9 Straight trunk | drum 10 trunk | drum 11 Rail 12 Tray 13 Conveyor 14 Electrode part 15 Core material holder 16 Core material 17 Narrow part 18 receiving portion 19 flat surface 21 guide plate 22 source gas supply pipe 23 exhaust gas pipes 24 and 26 gas supply pipes 25 and 27 gas exhaust pipe 28 valve 29 door 29a viewing window 31 metal pipe 32 support bracket part 33 insulating material 34 partition wall 35 cooling Flow path 36 Nut member 37 Cooling flow path 40 Side edge portion 41 Polycrystalline silicon production apparatus 42 Reaction vessel 43 Valve 44 Chamber 45 Partition plate 46 Polymer receiving portion 47 Valve 48 Pressurized gas introduction pipe 49 Polymer extraction pipe 50, 51 Valve S Polycrystalline silicon C crack

Claims (3)

A polycrystalline silicon production apparatus that heats and energizes a carbon core disposed in a reaction vessel, and deposits polycrystalline silicon on the surface by reaction of a raw material gas,
The core material is provided at the lower end portion of the electrode portion provided through the wall of the body portion of the reaction vessel from above, and the core material has a flat cross section and deposits polycrystalline silicon. A plane is arranged along the vertical direction, and receiving means for receiving polycrystalline silicon falling from the core material is provided below the core material. An apparatus for producing polycrystalline silicon, characterized in that a chamber is provided.   The polycrystalline silicon manufacturing apparatus according to claim 1, wherein the core material is a flat plate, and the flat surface is the front and back surfaces thereof.   3. The multi-component according to claim 1, wherein both end portions of the core member are supported by electrode portions, and the both end portions are narrow portions having a width smaller than the intermediate portion. Crystal silicon manufacturing equipment.

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