JP5360571B2 - Position inspection method and apparatus, exposure method and apparatus, and in-line inspection system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a position inspection device capable of detecting a pattern position accurately during an exposure process, when a substrate is patterned by exposure light. <P>SOLUTION: The image position inspection device 21 for obtaining positional information of a pattern formed on a sheet substrate P by irradiating exposure light, comprises a resin layer forming device 22 forming a reformable resin layer in a mark 42A on the sheet substrate P by exposure light, a suction device 24 exposing a partial pattern without having an substantive influence on the region except the mark 42A on the sheet substrate P after the partial pattern is formed on the resin layer by irradiating exposure light; and a mark detection device 26 for measuring positional information of the exposed partial pattern. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a position inspection technique for obtaining position information of a pattern formed on a substrate by exposure light exposure, an exposure technique using this position inspection technique, and an in-line inspection technique. Furthermore, the present invention relates to a device manufacturing technique using the exposure technique.

In recent years, liquid crystal display panels are frequently used as display devices. A liquid crystal display panel is usually manufactured by patterning a transparent thin film electrode on a glass plate using a photolithography process. In the photolithography process, an exposure apparatus is used to expose an image of a mask pattern onto a glass plate.
Recently, a long sheet substrate wound up in a roll shape may be used instead of a glass plate. In such a conventional exposure apparatus for a long sheet substrate, when the second and subsequent layers of the sheet substrate are overlaid and exposed, the position of the alignment mark image on the mask is measured on the exposure table side in advance. Then, based on the measurement result, the pattern image of the mask is aligned with one pattern formation region of the sheet substrate, and the pattern formation region is collectively exposed (static exposure) via the mask and the projection optical system. Was. After that, the sheet substrate is intermittently moved from the supply roller to the take-up roller side by repeating the operation of sucking and moving the sheet substrate with the exposure table and the above-described batch exposure operation for the next pattern formation region of the sheet substrate. (For example, refer to Patent Document 1).

JP 2007-114385 A

  When a conventional exposure apparatus is used to overlay and expose a sheet substrate, if the relative position of the mask pattern image and the pattern formation area of the sheet substrate shifts during exposure, the mask that is exposed to the sheet substrate thereafter The relative position of the pattern image and each pattern formation region is also shifted. That is, since exposure is performed in units of rolls, if the overlay accuracy is lowered in the middle, the state in which the overlay accuracy is lowered continues thereafter, and the yield of devices that are finally manufactured is lowered.

It is also possible to detect the image of the mask alignment mark formed on the photosensitive layer of the sheet substrate at the stage of the latent image. However, at present, when detecting a latent image formed on the photosensitive layer, it is difficult to increase measurement accuracy because the contrast of the detection signal is low.
In view of such circumstances, an aspect of the present invention is to make it possible to detect the position of a pattern with high accuracy during an exposure process when a pattern is formed on a substrate with exposure light.

According to a first aspect of the present invention, there is provided a position inspection method for obtaining position information of a pattern formed on a substrate by irradiating the substrate with ultraviolet light , wherein the predetermined region of the substrate is hydrophilic by the ultraviolet light. Forming a resin layer that changes , forming a partial pattern of the pattern by irradiating the resin layer with ultraviolet light , and substantially affecting the region other than the predetermined region of the substrate. without giving an be manifested by a partial pattern which hydrophilicity is changed and colored by ink material by irradiation of ultraviolet light, and detects the partial pattern that is manifested by colored, the position of the partial pattern Measuring the information, and providing a position inspection method.

According to the second aspect of the present invention, in the exposure method of irradiating the substrate with ultraviolet light , and sequentially superimposing and forming a plurality of patterns including the first and second patterns on the substrate, Forming a first partial pattern of the first pattern in the first region; forming a second partial pattern of the second pattern in a second region corresponding to the first region of the substrate; and Using the position inspection method according to the first aspect of the present invention, the first partial pattern that is manifested by the coloring and the second partial pattern that is manifested by the coloring are detected, and the first partial pattern is detected . And measuring the position information of the second partial pattern.

According to another aspect, on the basis of the result of detecting the position of the substrate mark formed in advance on the substrate, the pattern formation region for the display element set on the substrate is set apart from the substrate mark. an exposure method of irradiating by aligning the ultraviolet light, before irradiating the ultraviolet light on the pattern formation region of the substrate, on the substrate remote from the pattern formation region as well as close to the substrate mark In the predetermined region, a resin layer whose hydrophilicity is changed by the ultraviolet light is formed, and the ultraviolet light is irradiated to the resin layer when the pattern formation region on the substrate is irradiated with the ultraviolet light . without giving forming a mark pattern to be aligned with its substrate mark, substantially affect the area other than the predetermined region on the substrate, the hydrophilic by irradiation of ultraviolet light And it but to elicit an altered mark pattern colored with ink material, by measuring the relative positional relationship between the manifestation has been marked pattern and its substrate mark, the pattern formation region of the substrate as the exposure Storing the alignment error with the light, and irradiating the ultraviolet light to another pattern formation region on the substrate based on the stored alignment error, the relative position between the substrate and the ultraviolet light An exposure method is provided.
Further, according to the third aspect of the present invention, a pattern is formed on a substrate using the exposure method according to the second aspect of the present invention or another aspect thereof, and the substrate on which the pattern is formed is And a device manufacturing method including processing based on the pattern.
According to a fourth aspect of the present invention, there is provided a position inspection apparatus for obtaining position information of a pattern formed on a substrate by irradiation with ultraviolet exposure light, wherein the exposure light is applied to a predetermined region of the substrate by hydrophilicity. A resin layer forming apparatus that forms a resin layer with a variable thickness, and at least a partial pattern of the pattern is formed on the resin layer by irradiation of the exposure light, and then substantially in a region other than the predetermined region of the substrate. The partial pattern revealing device including a colored portion that makes the partial pattern whose hydrophilicity changed by irradiation of the exposure light without being affected by coloring with an ink material, and the revealed portion There is provided a position inspection apparatus including a pattern measuring apparatus that detects a pattern and measures position information of the partial pattern.

According to a fifth aspect of the present invention, there is provided an exposure apparatus for irradiating a substrate with exposure light to form a pattern on the substrate, the position inspection apparatus according to the fourth aspect of the present invention, and the substrate An exposure optical system is provided that includes an exposure optical system that irradiates a region including the predetermined region with the exposure light to form the pattern.
According to the sixth aspect of the present invention, a pattern is formed on a substrate using the exposure apparatus according to the fifth aspect of the present invention, and the substrate on which the pattern is formed is based on the pattern. And a device manufacturing method is provided.

  According to the seventh aspect of the present invention, the position inspection apparatus according to the fourth aspect of the present invention, a transport mechanism that moves the substrate in a predetermined direction, and the exposure of the substrate in an area other than the predetermined area. It is measured by a photosensitive layer forming apparatus that forms a photosensitive layer that is exposed to light, an exposure optical system that irradiates an area including the predetermined area of the substrate to form the pattern, and a position inspection apparatus. An in-line inspection system is provided that includes a control device that performs processing according to the position information.

  According to the aspect of the present invention, since the partial pattern that has been revealed after being formed on the resin layer of the substrate is detected, when the pattern is formed on the substrate by exposure light, the portion of the pattern is exposed during the exposure process. Based on the position of the pattern, the position of the pattern can be detected with high accuracy.

It is a perspective view which shows the mechanism part of the in-line exposure inspection system 10 which concerns on 1st Embodiment. It is a block diagram which shows the control system of the in-line exposure inspection system of FIG. (A) is a front view showing a state in which a photoresist is applied to the sheet substrate, (B) is a plan view showing the sheet substrate of FIG. 3 (A), and (C) is UV-cured in the substrate mark of the sheet substrate. The front view which shows the state which has apply | coated resin, (D) is an enlarged plan view which shows the board | substrate mark in FIG.3 (C), (E) is sectional drawing which follows the EE line | wire of FIG.3 (D). FIG. 4A is an enlarged plan view showing a part of a sheet substrate on which an image of a mask mark is formed, and FIG. 4B is an enlarged perspective view showing a state where uncured resin is sucked from the substrate mark of FIG. (C) is an enlarged perspective view showing a state where uncured resin is sucked. (A) is an enlarged plan view showing a substrate mark and a cured mark, and (B) is a diagram showing a configuration of a mark detection device. It is a flowchart which shows an example of exposure and test | inspection operation | movement of 1st Embodiment. (A) is an enlarged plan view showing an image of a cured mark and a mask mark formed on the second layer of the sheet substrate, (B) is a sectional view taken along line BB in FIG. 7 (A), and (C) is a sheet substrate. FIG. 7D is an enlarged plan view showing the substrate mark formed on the second layer, FIG. 7D is a sectional view taken along the line DD in FIG. 7C, and FIG. 5E is the mask mark formed on the third layer of the sheet substrate. FIG. 8F is an enlarged plan view showing an image, FIG. 7F is a sectional view taken along line FF in FIG. 7E, and FIG. 8G is a sectional view showing a state in which uncured resin is sucked from the state of FIG. . It is a perspective view which shows the mechanism part of 10 A of in-line exposure inspection systems which concern on 2nd Embodiment. (A) is an enlarged plan view showing a state in which a polyimide resin is applied in the substrate mark of the sheet substrate, (B) is a sectional view taken along line BB in FIG. 9 (A), and (C) is in FIG. 9 (A). The enlarged plan view which shows the state which exposed the image of the mask mark to the polyimide resin, (D) is sectional drawing which follows the DD line of FIG.7 (C). (A) is an enlarged cross-sectional view showing a state in which the polyimide resin of FIG. 9 (D) is colored, (B) is an enlarged cross-sectional view showing a state in which the image of the mask mark in FIG. 10 (A) is colored, (C) FIG. 11 is an enlarged plan view showing a substrate mark and a colored mark in FIG. It is a flowchart which shows an example of the manufacturing process of a liquid crystal display panel.

[First Embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a perspective view showing a schematic configuration of a mechanism part of an inline exposure inspection system 10 of the present embodiment, and FIG. 2 is a block diagram showing a control system of the inline exposure inspection system 10. The in-line exposure inspection system 10 sequentially applies a photoresist to the surface of the sheet substrate P, exposes an image of a mask pattern, while moving the sheet substrate P, which is a long sheet-shaped substrate that can be wound and stored in a roll. In addition, the image position of the exposed pattern is inspected. A large number of patterns for manufacturing a display element (for example, a liquid crystal display panel) are formed on the sheet substrate P along the longitudinal direction.

  As an example, the sheet substrate P is formed of a heat-resistant synthetic resin film that transmits visible light, specifically, a film of polyethylene resin, polypropylene resin, cellulose resin, polycarbonate resin, or vinyl acetate resin. That the substrate is sheet-like means that the thickness is sufficiently small (thin) compared to the size (area) of the substrate and the substrate has flexibility.

  In the following description, the positional relationship of each member will be described with reference to the XYZ orthogonal coordinate system set in FIG. The XYZ orthogonal coordinate system is set on a horizontal plane with the X axis and the Y axis, and the Z axis is set in the vertical direction. In the present embodiment, the sheet substrate P is transported (moved) intermittently or continuously in a direction parallel to the X axis (X direction) and in the + X direction with the surface parallel to the XY plane. .

  On the surface of the sheet substrate P of the present embodiment, a series of rectangular pattern forming regions 40A, 40B, 40C,... In which display elements are manufactured at predetermined intervals along the longitudinal direction (X direction) are arranged. In the formation regions 40A, 40B, etc., a first layer circuit pattern (not shown) is formed in the device manufacturing process so far. Further, substrate marks 42A and 44A made up of substantially square frame-shaped convex portions as alignment marks are formed in mark forming regions in contact with the pattern forming regions 40A and 40B in the + X direction. As shown in FIG. 3B, which is a plan view of a part of the sheet substrate P, the substrate having the same shape as the substrate marks 42A and 44A is also formed in the mark formation region in contact with the −X direction such as the pattern formation region 40B. Marks 43A and 45A are formed.

  Further, as shown in the enlarged plan view of FIG. 3D and the enlarged sectional view of FIG. 3E, as an example, the substrate mark 42A is a square frame-like convex portion of about 500 μm square, and the step ( The step is about 10 μm. The substrate mark 42A may be formed as a recess (dent) having a depth of about 10 μm on a flat surface. Furthermore, a thin film for forming a second-layer circuit pattern is formed in the mark formation region including the pattern formation region 40B and the like and the substrate marks 42A to 45A. The following description will be given with reference to one of the substrate marks 42A and 44A, but the same processing is performed for the other substrate marks 43A and 45A.

  In FIG. 1, an in-line exposure inspection system 10 includes a flat base member 12 elongated in the X direction placed on the floor surface via a vibration isolation mechanism (not shown), and an end portion of the base member 12 in the −X direction. A supply roller 14 that unwinds the sheet substrate P that is fixed to the upper surface and wound in a roll shape, a winding roller 16 that is fixed to the upper surface of the end of the base member 12 in the + X direction, and winds up the sheet substrate P, and a supply roller Guide rollers 13A and 13B are disposed immediately after 14 and immediately before the take-up roller 16, and guide the sheet substrate P so that the surface of the sheet substrate P is parallel to the XY plane and the Z position is constant. . The supply roller 14 includes a roller 15A that unwinds the sheet substrate P, a drive motor 15B that rotates the roller 15A, and support members 15C and 15D that support the roller 15A and the drive motor 15B. The take-up roller 16 includes a roller 17A that takes up the sheet substrate P, a drive motor 17B that rotates the roller 17A, and support members 17C and 17D that support the roller 17A and the drive motor 17B.

The guide rollers 13A and 13B are supported on the upper surface of the base member 12 so as to follow the movement of the sheet substrate P via support members (not shown) and rotary encoders 13AR and 13BR that detect a rotation angle, respectively. ing. The relative position in the X direction of the sheet substrate P can be detected from the rotation angles of the guide rollers 13A and 13B.
Further, the in-line exposure inspection system 10 includes a resist coater 18 for applying a photoresist (photosensitive agent) to the surface of the sheet substrate P at a position close to the supply roller 14, and a mask pattern in a region where the photoresist of the sheet substrate P is applied. And an exposure apparatus EX having a function of detecting the position of the image and a main controller 50 (see FIG. 2) comprising a computer that controls the overall operation of the system. . The position information in the X direction of the sheet substrate P is obtained from the detection signals of the rotary encoders 13AR and 13BR by the plate position calculation system 54 in FIG. 2, and this position information is supplied to the main controller 50. Based on this position information and the like, main controller 50 controls the operation of drive motors 15B and 17B via substrate control system 55. In this case, the moving speed of the sheet substrate P is defined by the drive motor 17B, and the drive motor 15B sends out the sheet substrate P so that the sheet substrate P does not loosen.

  In FIG. 1, a resist coater 18 includes two head portions 19A and 19B arranged in the Y direction for individually applying a photoresist, a guide portion 19D supported in parallel to the X axis, and a linear encoder (not shown). Based on the positional information of the head parts 19A and 19B measured in step S19, the head parts 19A and 19B are moved via a drive part 19C that moves the head parts 19A and 19B along the guide part 19D and a flexible pipe 19E. And a supply unit 19F for supplying a photoresist. The head portions 19A and 19B may be divided into three or more head portions.

  The exposure apparatus EX includes an exposure main body 20 that exposes an image of a mask pattern on the surface of the sheet substrate P via the projection optical system PL with exposure light IL in a substantially ultraviolet region, and an image position inspection apparatus 21. The image position inspection device 21 includes a resin layer forming device 22 for applying an ultraviolet curable resin in the substrate mark 42A (or a region in the vicinity thereof) of the sheet substrate P, and a suction device for sucking uncured resin from the substrate mark 42A. 24 and an image processing type mark detection device 26 that measures the amount of positional deviation in the X and Y directions between the substrate mark 42A and a cured mark (described later) formed by curing the ultraviolet curable resin therein. . The mark detection device 26 is disposed in front of the take-up roller 16. The resin layer forming apparatus 22 includes a nozzle head 23A for applying an ultraviolet curable resin to the surface of the sheet substrate P between the head portions 19A and 19B of the resist coater 18 and the projection optical system PL, and a flexible pipe 23B. And a supply unit 23C for supplying an ultraviolet curable resin to the nozzle head 23A. The ultraviolet curable resin is cured by irradiation with the exposure light IL. A drive unit (not shown) that adjusts the position of the nozzle head 23A in the Y direction is also provided.

  The suction device 24 includes a blowing nozzle 25A that blows out a compressed clean gas (such as dry air), a suction nozzle 25B that sucks uncured resin together with the compressed gas, and a flexible pipe 25C. A compressor 25E that supplies compressed gas to the blower nozzle 25A, and a suction pump 25F that sucks gas and resin from the suction nozzle 25B through a flexible pipe 25D. The nozzles 25A and 25B are disposed between the projection optical system PL and the mark detection device 26. A drive unit (not shown) for adjusting the positions of the nozzles 25A and 25B in the Y direction is also provided. In practice, as shown in an enlarged view in FIG. 4B, the blower nozzle 25A is composed of two blower nozzles 25AX and 25AY that blow out compressed gas in the −X direction and the + Y direction, and the suction nozzle 25B is −X. And two suction nozzles 25BX and 25BY for sucking gas and resin in the + Y direction. The suction device 24 may include only the suction nozzle 25B, the pipe 25D, and the suction pump 25F.

2 controls the operation of the supply unit 19F and the drive unit 19C of the resist coater 18 via the coater control system 60, and also controls the operation of the supply unit 23C of the resin layer forming device 22. Further, the main controller 50 controls the operations of the compressor 25E and the suction pump 25F of the suction device 24 via the suction device control system 59.
As shown in FIG. 5B, the mark detection device 26 includes, for example, a light source unit 27A that generates detection light DL in the visible range, and a collimator system that includes lenses 27B and 27C that make the detection light DL substantially parallel. A beam splitter 27D that transmits part of the detection light DL and an objective lens 27E that irradiates two detection marks on the surface of the sheet substrate P with the detection light DL transmitted through the beam splitter 27D. The detection light DL reflected from the surface of the sheet substrate P returns to the beam splitter 27D via the objective lens 27E. Further, the mark detection device 26 includes a mirror 27F that reflects the detection light DL reflected by the beam splitter 27D, and an imaging lens 27G that collects the reflected detection light DL and forms images of two test marks. And a CCD or CMOS type two-dimensional image sensor 27H for detecting the image. 2 is obtained from the detection signal of the image sensor 27H by the misalignment calculation system 58 of FIG. 2, and the misalignment amount is supplied to the main controller 50.

  In FIG. 1, the scanning exposure type exposure main body 20 of the exposure apparatus EX has, for example, a substantially ultraviolet range selected from a wavelength range including g-line (wavelength 436 nm), h-line (wavelength 405 nm), and i-line (wavelength 365 nm). An exposure light source 30 that generates the exposure light IL, a light transmission optical system 31 that folds and transmits the exposure light IL from the exposure light source 30, and an illumination area of the pattern surface of the mask M with the exposure light IL from the light transmission optical system 31 An illumination device 32 that illuminates (in the present embodiment, four illumination areas) and a mask stage MST that holds the mask M by suction and moves back and forth substantially along the X direction are provided. Further, the exposure main body 20 moves the projection optical system PL that projects a partial image of the pattern of the mask M onto the sheet substrate P and the sheet substrate P by suction and moves at a predetermined speed in the + X direction during scanning exposure. A substrate stage PST for performing the above and an exposure control system 51 of FIG. 2 are provided. For convenience of explanation, in FIG. 1, the mask M and the mask stage MST are represented by two-dot chain lines. Mask stage MST is movably mounted via an air bearing on an upper surface parallel to the XY plane of a mask base (not shown) in which an opening through which exposure light passes is formed between illumination device 32 and projection optical system PL. Is placed. The substrate stage PST is mounted on an upper surface parallel to the XY plane of a flat substrate base PB fixed to the base member 12 so as to be movable via an air bearing.

  The illuminating device 32 branches the exposure light IL incident from the light transmission optical system 31 into four light beams, and each light beam passes through an optical integrator, a relay optical system, a variable blind (variable field stop), and a condenser lens. Irradiation is performed on an illumination area indicated by a thin dotted line in the Y direction corresponding to the mask M. The exposure control system 51 controls the light emission operation of the exposure light source 30 and the opening / closing operation of the variable blind in the illumination device 32.

  The pattern area of the mask M is divided into four partial pattern areas M1, M2, M3, and M4 in the Y direction, and a cross-shaped mask mark 38A as an alignment mark at the end of the pattern area on the + X direction side. In addition, a square frame-shaped mask mark 38B is formed. The mask marks 38A and 38B are opening patterns formed in the light shielding film. A similar mask mark (not shown) is also formed at the end of the pattern region on the −X direction side. The positional relationship information between the mask marks 38A, 38B and the like and the device patterns in the partial pattern areas M1 to M4 is stored in the storage unit in the main controller 50. The positional relationship between the partial pattern regions M1 to M4 of the mask M and the mask mark 38A is the same except for the manufacturing error and the positional relationship between the pattern formation regions 40A, 40B and the like of the sheet substrate P and the substrate marks 42A in the vicinity thereof. is there. In addition, illumination areas are set so as to be alternately shifted in the X direction in the partial pattern areas M1 to M4. In addition, as marks for alignment of the mask M, two marks (not shown) formed corresponding to the partial pattern areas M1 to M4 may be used.

  The projection optical system PL of the present embodiment includes four partial projection optical systems PL1, PL2, PL3 that form four erect images at the same magnification corresponding to the four illumination areas of the mask M on the surface of the sheet substrate P. It has PL4. The partial projection optical systems PL1 to PL4 each form an image of the same size as the pattern in the illumination area of the mask M in an exposure area (area optically conjugate with the illumination area) indicated by a dotted line on the surface of the sheet substrate P. Each of the partial projection optical systems PL1 to PL4 is, for example, a catadioptric system.

  Position information of the mask stage MST holding the mask M is measured by the X-axis two-axis interferometers 33XA and 33XB and the Y-axis interferometer 33Y, and the measured value is supplied to the stage coordinate calculation system 52 in FIG. . Similarly, the position information of the substrate stage PST is measured by a substrate-side interferometer 35 (see FIG. 2) made of, for example, an interferometer having three or more axes, and the measured value is supplied to the stage coordinate calculation system 52. The stage coordinate calculation system 52 determines the X direction and Y direction positions of the mask stage MST and the substrate stage PST, and the rotation angle around the axis parallel to the Z axis (hereinafter referred to as the θz direction) from the above measurement values. The position information is obtained and supplied to the main controller 50 and the exposure control system 51. The exposure control system 51 controls the position and speed of the mask stage MST via a drive mechanism 53M such as a linear motor based on the position information and the control information from the main controller 50, and a drive mechanism such as a linear motor. The position and speed of the substrate stage PST are controlled via 53P. Further, the exposure control system 51 controls the adsorption and desorption of the sheet substrate P with respect to the upper surface of the substrate stage PST via an adsorption device 53V including an adsorption pad (not shown) on the upper surface of the substrate stage PST.

  When the moving speed of the sheet substrate P is controlled with high accuracy by the take-up roller 16 and the supply roller 14, the substrate stage PST may be simply used as a guide member for the sheet substrate P. In this case, the substrate stage PST is fixed to the substrate base PB, and a plurality of vacuum preload type air pads for moving the sheet substrate P in a non-contact manner are installed on the upper surface of the substrate stage PST.

  In addition, mask alignment systems 34A and 34B including an aerial image measurement system for measuring the position of an image by any of the partial projection optical systems PL1 to PL4 such as the mask marks 38A and 38B of the mask M are installed on the substrate stage PST. Has been. Further, the exposure main body 20 detects the positions of the substrate marks 42A, 44A, etc. of the sheet substrate P between the supply roller 14 and the head portions 19A, 19B of the resist coater 18 and image processing type substrate alignment systems 36A, 36B. It has. Detection signals of the mask alignment systems 34A and 34B and the substrate alignment systems 36A and 36B are supplied to the alignment calculation system 56 of FIG. The alignment calculation system 56 determines the position of the pattern area (partial patterns M1 to M4) of the mask M in the X direction, the Y direction, and the rotation angle in the θz direction (position information of the mask M) from the images of the mask marks 38A and 38B. Then, from the positions of the substrate marks 42A, 44A, etc., the positions of the pattern formation regions 40A, 40B, etc. of the sheet substrate P in the X direction, the Y direction, and the rotation angle (position information of the sheet substrate P) in the θz direction are obtained.

  Further, the detection center of the substrate alignment system 36A, 36B and the image of the mask mark 38A, 38B, etc. in a state where the image of the mask mark 38A, 38B, etc. is detected by the mask alignment system 34A, 34B in advance by, for example, a test print. A baseline which is a positional relationship with the center of the center (interval in the X direction, Y direction, and rotation angle in the θz direction) is obtained, and this baseline is stored in the storage unit of the alignment calculation system 56. Further, the offset information of the baseline is stored in the storage device 57, and the alignment calculation system 56 corrects the baseline with the offset stored in the storage device 57 as necessary. The alignment calculation system 56 supplies the position information of the mask M and the position information of the sheet substrate P corrected with the corrected baseline to the main controller 50. The position information is also supplied from the main controller 50 to the exposure control system 51. The storage section of the main controller 50 includes detection centers of the substrate alignment systems 36A and 36B, head sections 19A and 19B of the resist coater 18, nozzle head 23A of the resin layer forming apparatus 22, and nozzles 25A and 25B of the suction apparatus 24. Information on relative positional relationships is also stored.

  At the time of scanning exposure, based on the above position information, the exposure control system 51 makes the mask stage MST and the mask stage MST and the image of the partial pattern areas M1 to M4 of the mask M overlap with the pattern formation areas 40A and 40B of the sheet substrate P and the like. The substrate stage PST is synchronously driven in the + X direction at the same speed. Then, the scanning of the mask M with respect to the illumination area irradiated with the exposure light IL from the illumination device 32 in the + X direction and the scanning of the sheet substrate P with respect to the exposure area in the + X direction are performed in synchronization with each other. The pattern image of the partial pattern areas M1 to M4 and the image of the mask marks 38A and 38B are exposed to the areas including the P pattern formation areas 40A and 40B and the substrate marks 42 adjacent thereto, respectively.

Hereinafter, an example of the exposure and inspection operations of the inline exposure inspection system 10 of the present embodiment will be described with reference to the flowchart of FIG. This operation is controlled by the main controller 50. Hereinafter, for convenience of explanation, a case where exposure is performed on the pattern formation region after the pattern formation region 40B of the sheet substrate P will be described.
First, in step 101 of FIG. 6, the mask M is loaded on the mask stage MST of FIG. 1, the position information of the mask M is measured via the mask alignment systems 34A and 34B, and the measurement result is the main controller 50. To the exposure control system 51. In accordance with the measurement result, for example, correction of the rotation angle of the mask M in the θz direction (alignment) is performed. In the next step 102, the base lines of the substrate alignment systems 36A and 36B are set in the alignment calculation system 56 as described above. At this stage, main controller 50 sets the offset of the baseline stored in storage device 57 to zero. In the next step 103, one roll of sheet substrate P is attached to the supply roller 14, the leading end of the sheet substrate P is bridged to the take-up roller 16 via the guide rollers 13A and 13B, and the take-up roller 16 makes the sheet substrate P Begins scraping in the + X direction.

  Thereafter, the substrate alignment systems 36A and 36B of the exposure main body 20 continuously detect the substrate marks 42A and 44A on the sheet substrate P at a predetermined sampling rate. Then, in step 104, if the substrate marks 42A and 44A in the + X direction of the pattern formation region 40B of the sheet substrate P are detected, the process proceeds to step 105. Then, the alignment calculation system 56 corrects the detected positions of the substrate marks 42A and 44A using the offset read out from the storage device 57, and corrects it with the above-described baseline, and uses the pattern image of the mask M as a reference. The position of the pattern formation region 40B in the X direction and the Y direction and the rotation angle in the θz direction (position information of the sheet substrate P) are obtained, and this position information is sent to the main controller 50. This position information is also supplied to the exposure control system 51. At this stage, the offset read from the storage device 57 is 0, and the baseline offset is not substantially corrected.

  In the next step 106, the head portions 19A and 19B of the resist coater 18 are moved in the −X direction relative to the sheet substrate P from the position A31 in FIG. A photoresist PR is applied to a predetermined thickness. As shown in FIG. 3B, which is a plan view of FIG. 3A, the resist coating region 41B covers the region including the substrate marks 44A and 45A among the pattern formation region 40B and the mark formation region. The photoresist PR is not applied to the substrate mark 42A and the mark formation region in the vicinity thereof. Similarly, the photoresist PR is also applied to the resist application areas 41A and 41C covering the pattern formation areas 40A and 40C.

  In the next step 107, as shown in FIG. 3C, the ultraviolet curable resin 46 is poured (applied) from the nozzle head 23A of the resin layer forming apparatus 22 into the substrate mark 42A adjacent to the pattern forming region 40B. . In this embodiment, as shown in FIG. 3E, which is a cross-sectional view taken along the line EE in FIGS. 3D and 3D, the ultraviolet curable resin 46 is a convex frame-shaped substrate mark 42A. It is applied only inside.

  In the next step 108, the exposure main body 20 of the exposure apparatus EX performs the mark formation region (the resist coating region 41B and the substrate mark 42A) including the pattern formation region 40B and the substrate marks 42A to 45A of the sheet substrate P in FIG. The pattern images of the partial pattern areas M1 to M4 of the mask M and the images of the mask marks 38A and 38B are subjected to scanning exposure. At this time, the mask stage MST and the substrate stage PST move in the + X direction synchronously. As a result, as shown in FIG. 4A, an image 38BP of the mask mark 38B is exposed to the mark forming region including the substrate mark 44A in the resist coating region 41B, and the ultraviolet curable resin 46 in the substrate mark 42A is exposed. The image 38AP of the mask mark 38A is exposed. Only the portion of the image 38AP of the ultraviolet curable resin 46 is cured.

After the scanning exposure is completed, the mask stage MST returns to the next scanning start position in the −X direction at high speed, and the substrate stage PST releases the suction of the sheet substrate P and then moves to the next scanning start position in the −X direction at high speed. Return. Note that when the scanning speed of the sheet substrate P is also controlled by the winding roller 16 and the supply roller 14, the substrate stage PST may remain stationary.
In the next step 109, the take-up roller 16 moves the substrate mark 42 </ b> A of the sheet substrate P to below the nozzles 25 </ b> A and 25 </ b> B of the suction device 24. Thereafter, as shown in an enlarged view in FIG. 4B, gas is blown from the blow nozzles 25AX and 25BY to the ultraviolet curable resin 46 in the substrate mark 42A, and is sucked by the suction nozzles 25BX and 25BY. The uncured portion of the ultraviolet curable resin 46 is removed by suction with the suction device 24. As a result, as shown in FIG. 4C, a portion corresponding to the image 38AP in the substrate mark 42A is manifested as a cross-shaped convex cured mark 46A.

  In the next step 110, the portion of the substrate mark 42 </ b> A of the sheet substrate P is moved within the field of view of the mark detection device 26 by the winding roller 16. Then, the mark detection device 26 is used to detect the image of the substrate mark 42A and the curing mark 46A on the sheet substrate P as shown in FIGS. From this detection result, the positional deviation amount calculation system 58 obtains positional deviation amounts ΔX and ΔY in the X direction and Y direction of the curing mark 46A with respect to the substrate mark 42A. At this time, both the substrate mark 42A and the cured mark 46A are convex marks, and at least their edge portions are images with high contrast (high SN ratio), and thus the positional deviation amounts ΔX and ΔY are detected with high accuracy. it can. The main controller 50 corrects the above-described baseline offset in the storage device 57 using the positional deviation amounts ΔX and ΔY. In this case, for example, (−ΔX, −ΔY) is the offset in the X direction and Y direction after correction. This offset is also an overlay error between the pattern image of the mask M and the pattern formation region 40B of the sheet substrate P.

  Further, for example, a cured mark of an ultraviolet curable resin is formed also in the substrate mark 43A on the −X direction side of the pattern forming region 40B of FIG. 3B, and a positional deviation amount between these marks is measured to determine a pattern. You may obtain | require the positional offset amount of the X direction of the formation area 40B and the pattern image of the mask M, a Y direction, and the rotation angle of (theta) z direction. In this case, the rotation angle of the baseline offset in the θz direction can also be corrected.

  In the next step 111, it is determined whether or not the exposure has been completed on all the pattern formation regions 40A, 40B, etc. of the sheet substrate P. If there are unexposed pattern formation regions 40A, 40B, etc., the operation returns to step 104, and the exposure and inspection operations in steps 104-110 are repeated for the next pattern formation region 40C, etc. of the sheet substrate P. Actually, for example, the operations of Steps 104 to 106 and the operations of Steps 107 to 110 are executed in parallel on the adjacent pattern formation regions 40B and 40C of the sheet substrate P. Next, when the positions of the substrate marks 42A and 44A in the pattern formation area 40D of the sheet substrate P are detected by the substrate alignment systems 36A and 36B, in step 105, the offset of the storage device 57 corrected in the previous step 110 is detected. Is used to correct the baseline. Therefore, even if an overlay error (offset) between the pattern image of the mask M and, for example, the pattern formation region 40B occurs during the exposure of the series of pattern formation regions 40A and 40B on the sheet substrate P, the next step 105 is performed. Thus, by correcting the offset, it is possible to reduce an overlay error between the next pattern formation region 40D of the sheet substrate P and the pattern image of the mask M.

Thereafter, when the exposure for all the pattern formation areas of the sheet substrate P is completed in step 111, the operation proceeds to step 112, and the roll substrate 16 unloads and unloads the sheet substrate P for one roll. The sheet substrate P is developed by a developing device (not shown).
FIG. 7A is an enlarged view showing the substrate mark 42A and the curing mark 46A of the sheet substrate P of FIG. 4C and the mask mark image 38BP formed in the resist coating region 41B. Further, in FIG. 7B, which is a cross-sectional view taken along the line BB of FIG. 7A, the substrate mark 42A is formed on the first layer of the sheet substrate P, and the substrate mark 42A is covered with the second layer of thin film 47A. The image 38BP is formed on the photoresist PR layer on the surface of the thin film 47A. Thereafter, through a photoresist development and pattern formation process, a substrate mark 42B is formed adjacent to the substrate mark 42A as shown in FIG. 7C. As shown in FIG. 7D, which is a cross-sectional view taken along the line DD of FIG. 7C, the substrate mark 42B is formed on the second thin film 47A, and the substrate mark 42B is covered with the third thin film 47B. It has been broken. In the second layer photoresist development process, the cured mark 46A in the substrate mark 42A is removed, but the substrate mark 42A is covered with the second and third thin films 47A and 47B. The position detection accuracy may decrease.

  Therefore, in the step of exposing the third layer of the sheet substrate P, as shown in FIG. 7E, which is a cross-sectional view taken along the line FF in FIGS. The UV curable resin 46 is applied, the mask mark image 38CP of the mask for the third layer is exposed in the UV curable resin 46, and another mask mark image is applied to the photoresist PR applied adjacent to the substrate mark 42B. 38DP is exposed. Further, by removing the portion of the ultraviolet curable resin 46 other than the image 38CP during the exposure process, a cured mark 46B is formed in the substrate mark 42B as shown in FIG. Therefore, the overlay error can be obtained in the middle of the exposure process by measuring the amount of positional deviation between the substrate mark 42B and the cured mark 46B by the mark detection device 26.

Further, by developing the photoresist PR and passing through a pattern forming process, the portion of the image 38DP becomes the third layer substrate mark 42C. Therefore, exposure is performed in the same manner as when the substrate mark 42A is used using this substrate mark 42C. Overlay errors can be determined during the process.
The effects and the like of this embodiment are as follows.
(1) The image position inspection apparatus 21 of the present embodiment is a position inspection apparatus that obtains position information of the pattern image of the mask M formed on the sheet substrate P by irradiation with the exposure light IL, and is a substrate mark on the sheet substrate P. Resin layer forming apparatus 22 for forming a layer of ultraviolet curable resin 46 cured by exposure light IL in 42A (predetermined region), and mask mark 38A in the pattern image by irradiation of exposure light IL to the layer of resin 46 After the image 38AP (partial pattern) is formed, the image 38AP formed on the layer of the ultraviolet curable resin 46 is used as the curing mark 46A without substantially affecting the area other than the substrate mark 42A of the sheet substrate P. Marking device 26 (pattern) that measures the amount of misalignment between the suction device 24 (the revealing device) that makes it manifest and the substrate mark 42A and the curing mark 46A It includes a measuring device), a.

In the case where the pattern image of the mask M is formed on the sheet substrate P by the exposure light IL by detecting the cured mark 46A that has been formed after being formed in the layer of the ultraviolet curable resin 46 using the image position inspection device 21. In addition, the position of the pattern image can be detected with high accuracy based on the position of the curing mark 46A during the exposure process.
Further, the exposure and inspection operations using the exposure apparatus EX (the exposure main body unit 20 and the image position inspection apparatus 21) of the present embodiment are performed on the mask M formed on the sheet substrate P by irradiating the sheet substrate P with the exposure light IL. A position inspection method for obtaining position information of a pattern image, in which a step 107 of forming a layer of an ultraviolet curable resin 46 in a substrate mark 42A of a sheet substrate P is irradiated with an exposure light IL on the layer of the ultraviolet curable resin 46 Of the pattern image, the step 108 of forming the image 38AP of the mask mark 38A and the image 38AP formed on the ultraviolet curable resin 46 are made visible without substantially affecting the area other than the substrate mark 42A. A step 109 for setting the curing mark 46A and a step 110 for measuring the amount of positional deviation between the substrate mark 42A and the image 38AP are included.

According to this embodiment, since the cured mark 46A that has been made visible after being formed on the ultraviolet curable resin 46 is detected, the position of the pattern image of the mask M can be detected with high accuracy during the exposure process.
(2) Further, in the present embodiment, in order to make the image 38AP appear, the ultraviolet curable resin 46 is used to remove the resin that has not been exposed (uncured portion). Since the ultraviolet curable resin is easy to handle, the image 38AP can be easily revealed.

  (3) In this embodiment, the image 38AP of the mask mark 38A is made visible by the resin layer forming device 22 and the suction device 24. However, an image of a part of the circuit pattern (partial pattern) of the pattern in the partial pattern areas M1 to M4 of the mask M is made visible, and the position of the cured mark corresponding to the circuit pattern image is determined by the mark detection device 26. It may be detected.

(4) In this embodiment, the amount of positional deviation between the actual image 38AP (curing mark 46A) and the substrate mark 42A (background mark) of the sheet substrate P is measured. Therefore, during the exposure process, an overlay error between the pattern image of the mask M and the pattern formation regions 40A, 40B, etc. of the sheet substrate P can be directly measured with high accuracy.
Instead of using the substrate mark 42A of the sheet substrate P as a reference, for example, the position of the image 38AP (cured mark 46A) that is made visible based on the index mark or the like of the mark detection device 26 may be measured.

(5) The substrate mark 42A is a convex frame-shaped mark, and the image 38AP is formed in the substrate mark 42A (in the vicinity of the substrate mark 42A). In this case, since the ultraviolet curable resin 46 can be easily applied only inside the substrate mark 42A, the ultraviolet curable resin 46 does not adhere to other regions of the sheet substrate P.
The image 38AP may be formed at a position near the substrate mark 42A that is laterally displaced in the X direction or the Y direction.

(6) The exposure apparatus EX of the present embodiment is an exposure apparatus that irradiates the sheet substrate P with the exposure light IL and forms a pattern image of the mask M on the sheet substrate P. And a projection optical system PL (exposure optical system) that forms a pattern image of the mask M by irradiating the substrate mark 42A of the substrate P and the pattern formation regions 40A and 40B with the exposure light IL.
Further, the exposure method of the exposure apparatus EX is to irradiate the sheet substrate P with the exposure light IL to form a pattern (first pattern) formed in the pattern formation region 40B and the mark formation region adjacent thereto, and a mask. In an exposure method in which a plurality of patterns including an M pattern image (second pattern) are sequentially overlapped and formed on a sheet substrate P, the first pattern is formed on a mark formation region in contact with the pattern formation region 40B of the sheet substrate P. A step of forming a part of the substrate mark 42A, a step 108 of forming an image 38AP (second pattern) of the mask mark 38A of the mask M in the substrate mark 42A of the sheet substrate P, and a step 107 of the present embodiment The position information of the image 38AP (curing mark 46A) with respect to the substrate mark 42A is obtained using the exposure and inspection operations up to ˜110. It is measured.

Therefore, the overlay error between the pattern image of the mask M and the pattern formation region 40B of the sheet substrate P can be measured without developing the photoresist during the exposure process.
(7) Further, the in-line exposure inspection system 10 of the present embodiment is other than the image position inspection device 21, the supply roller 14 and the take-up roller 16 that move the sheet substrate P in the + X direction, and the substrate mark 42A of the sheet substrate P. A resist coater 18 (photosensitive layer forming apparatus) that forms a photoresist (photosensitive layer) that is exposed to the exposure light IL in the pattern formation regions 40A and 40B and the mark formation region, and a mask by irradiating the sheet substrate P with the exposure light IL A projection optical system PL that forms an image of an M pattern, and a main controller 50 that performs processing according to positional information of the image 38AP (cured mark 46A) with respect to the substrate mark 42A measured by the mark detection device 26 are provided. Yes.

Therefore, for example, while moving a long sheet substrate P wound on a roll, the photoresist is applied to the series of pattern formation regions 40A and the like and the mark formation region of the sheet substrate P, the exposure of the pattern image of the mask M, and the sheet substrate P Inspection of overlay errors between the pattern formation region 40A and the pattern image of the mask M can be efficiently performed.
[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. Hereinafter, in FIG. 8, FIG. 9 (A), FIG. 9 (C), and FIG. 10 (A), the part corresponding to FIG. 1, FIG. 3 (D), FIG. 4 (A), and FIG. Are denoted by the same reference numerals, and detailed description thereof is omitted.

  FIG. 8 is a perspective view showing a mechanism part of the inline exposure inspection system 10A of the present embodiment. In FIG. 8, the in-line exposure inspection system 10A includes a supply roller 14, a take-up roller 16, a resist coater 18, and an exposure apparatus EXA. The exposure apparatus EXA includes an exposure main body 20 and an image position inspection apparatus 21A. Further, the image position inspection device 21A includes a resin layer forming device 70 for applying a polyimide resin, which is a resin whose hydrophilicity is changed by irradiation of the exposure light IL, into the substrate mark 42A of the sheet substrate P, and exposure light in the polyimide resin. A coloring device 74 for coloring a portion whose hydrophilicity has been changed by irradiation of IL with a predetermined ink material, and a mark detection device 26 are provided.

  The resin layer forming apparatus 70 includes a coating apparatus 71 and a baking processing apparatus 73 that bakes and hardens the applied polyimide resin. The coating device 71 includes a nozzle head 72A for dropping a polyimide resin, and a supply unit 72C for supplying the polyimide resin to the nozzle head 72A via a flexible pipe 72B. The nozzle head 72A is disposed in the vicinity of the + X direction side of the substrate alignment systems 36A and 36B, and the bake processing device 73 is disposed on the + X direction side with respect to the nozzle head 72A. Between the bake processing device 73 and the projection optical system PL, the head portions 19A and 19B of the resist coater 18 are arranged so as to be movable in the X direction.

  The coloring device 74 includes a nozzle head 75A that drops silver (Ag) nanoparticles as an ink material, and a supply unit 75B that supplies the ink material to the nozzle head 75A via a flexible pipe. The nozzle heads 72A and 75A are also provided with a drive unit (not shown) for adjusting the position in the Y direction. Further, as the control system of the in-line exposure inspection system 10A, a control system for controlling the supply unit 75B of the coloring device 74 is provided instead of the suction device control system 59 in the control system of FIG. 2, and the coater control system 60 is a resin layer. A control system that controls the supply unit 72C and the bake processing device 73 of the forming apparatus 70 can be used. The other configuration is the same as that of the embodiment of FIG.

  Also in the in-line exposure inspection system 10A of the present embodiment, the exposure and the inspection of the position of the pattern image of the mask M are performed by substantially the same operation as in the flowchart of FIG. However, in this embodiment, polyimide resin is supplied instead of step 107 in FIG. However, the supply of the polyimide resin is executed before step 106. That is, the polyimide resin 76 is supplied into the substrate mark 42A of the sheet substrate P in FIG. 9A by the coating device 71 of the resin layer forming device 70. The substrate mark 42 </ b> A is a square convex frame of about 500 μm square. As shown in FIG. 9B, which is a sectional view taken along line BB in FIG. 9A, the height (depth) of the convex portion of the substrate mark 42A is about 10 μm. Thereafter, the polyimide resin 76 in the substrate mark 42 </ b> A is baked and hardened by the bake processing device 73.

  Thereafter, a photoresist PR is applied in step 106 of FIG. In the next step 108, as shown in FIG. 9B, the sheet substrate P is irradiated with the exposure light IL, and as shown in FIG. 9C, the hydrophobic polyimide resin 76 in the substrate mark 42A. The mask mark image 38AP is exposed inside. Further, the mask mark image 38BP is exposed to the photoresist PR in the resist coating region 41B on the + Y direction side. As shown in FIG. 9D, which is a cross-sectional view taken along the line DD in FIG. 9C, the portion of the image 38AP in the polyimide resin 76 becomes hydrophilic, and the other portions remain hydrophobic. .

  Thereafter, in a process corresponding to step 109 in FIG. 6, using the coloring device 74 in FIG. 8, as shown in FIG. 10A, an ink material made of mercury nanoparticles on the polyimide resin 76 in the substrate mark 42A. IK is added dropwise. As a result, as shown in FIG. 10B, the ink material IK adheres to the portion of the image 38AP (the hydrophilic portion 76A) in the polyimide resin 76, and the image 38AP becomes a manifested colored mark IKA. Accordingly, in the process corresponding to the next step 110 in FIG. 6, as shown in FIG. 10C, the color mark IKA (image 38AP) is displaced with respect to the substrate mark 42A using the mark detection device 26 in FIG. The quantities ΔX and ΔY can be measured with high accuracy. Accordingly, as in the first embodiment, the pattern offset image of the mask M and the next pattern formation region of the sheet substrate P are corrected by correcting the base line offset of the substrate alignment systems 36A and 36B based on the amount of displacement. Overlay errors with 40D and the like can be reduced.

  In the second embodiment, polyimide resin is used as the resin whose hydrophilicity changes by irradiation with the exposure light IL, but other resins can be used. As the ink material IK, a hydrophilic or hydrophobic material other than mercury nanoparticles can be used. When the ink material IK is hydrophobic, the ink material adheres to a portion other than the image 38AP, so that detection can be performed with high accuracy as well.

Also in this embodiment, the polyimide resin 76 may be attached to a region laterally shifted in the X and Y directions from the substrate mark 42A, and the image 38AP may be exposed in this region.
In each of the above embodiments, the following modifications are possible.
(1) In each of the above embodiments, the baseline offset of the substrate alignment systems 36A and 36B is corrected using the measurement result of the mark detection device 26. However, without correcting the offset of the baseline, for example, when an overlay error exceeds an allowable range from the measurement result of the mark detection device 26, an alarm is generated, and the movement of the sheet substrate P is stopped to perform the exposure process. You may interrupt. In this case, for example, after the baseline is remeasured, the exposure of the sheet substrate P is restarted from the position where the exposure process is interrupted, thereby preventing the device yield from being lowered.

(2) In each of the above-described embodiments, as the resin that can be modified by irradiation with the exposure light IL, an ultraviolet curable resin or a resin whose hydrophilicity changes is used. Other resins with varying physical or chemical properties can be used as the modifiable resin.
(3) In the above embodiment, the sheet substrate P is moved intermittently or continuously in the + X direction. However, if necessary, an operation of rewinding the sheet substrate P in the −X direction is included. Good.

  (4) In each of the above-described embodiments, the projection optical system PL has the equal-magnification partial projection optical systems PL1 to PL4. However, as the projection optical system PL, a single projection optical system may be used in addition to the projection optical system having an arbitrary number of partial projection optical systems. Furthermore, the magnification of the projection optical system PL (or a partial projection optical system constituting the projection optical system PL) may be reduced or enlarged other than the same magnification. Further, the projection optical system PL may form an inverted image in the X direction and / or the Y direction.

(5) As the exposure light IL, light from an ultraviolet LED, laser light from a KrF excimer laser (248 nm) or ArF excimer laser (193 nm), or a harmonic of a solid-state laser (semiconductor laser or the like), for example, 3 of a YAG laser The present invention can be applied even when using a double harmonic (wavelength 355 nm) or the like.
(6) As the exposure main body 20, in addition to the scanning exposure type exposure main body, it is also possible to use a batch exposure type exposure main body, an electron beam drawing method or a laser beam drawing drawing device, or the like. is there.

(7) For example, in the embodiment of FIG. 1, the interval between the mark detection device 26 and the take-up roller 16 may be widened, and a photoresist developing device may be installed at this interval.
(8) In the in-line exposure inspection systems 10 and 10A, the resist coater 18 may be omitted, and the in-line exposure inspection systems 10 and 10A may perform only the exposure of the pattern image of the mask M and the inspection of the image position. .

(9) In the above-described embodiment, the exposure target is the long sheet substrate P having flexibility. However, the exposure target substrate is a rectangular plate having a relatively high rigidity for manufacturing a liquid crystal display panel or the like. A glass plate, a ceramic substrate for manufacturing a thin film magnetic head, a circular semiconductor wafer for manufacturing a semiconductor element, or the like can also be used.
Moreover, by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on the sheet substrate P using the exposure apparatus EX, EXA or the exposure method (or the inline exposure inspection system 10, 10A) of the above embodiment. A large number of liquid crystal display panels (liquid crystal display elements) as micro devices can also be obtained. Hereinafter, an example of this manufacturing method will be described with reference to the flowchart of FIG.

  In step S401 (pattern formation process) in FIG. 11, first, a liquid crystal is applied using the above-described exposure apparatus, which is a coating process in which a photoresist is coated on a sheet-like plate to be exposed to prepare a photosensitive substrate (sheet substrate P). An exposure process for transferring and exposing the mask pattern for the display panel to a number of pattern forming regions on the photosensitive substrate and a developing process for developing the photosensitive substrate are performed. A predetermined resist pattern is formed on the plate by a lithography process including the coating process, the exposure process, and the development process. Following this lithography process, a predetermined pattern including a large number of electrodes and the like is formed on the plate through an etching process using the resist pattern as a mask, a resist stripping process, and the like. The lithography process or the like is executed a plurality of times according to the number of layers on the plate.

  In the next step S402 (color filter forming step), a large number of three fine filter sets corresponding to red R, green G, and blue B are arranged in a matrix, or red R, green G, and blue B are arranged. A color filter is formed by arranging a set of three stripe-shaped filters in the horizontal scanning line direction. In the next step S403 (cell assembly process), for example, liquid crystal is injected between the plate having the predetermined pattern obtained in step S401 and the color filter obtained in step S402, and a liquid crystal panel (liquid crystal cell) is obtained. ).

In subsequent step S404 (module assembling process), a liquid crystal display panel is mounted by attaching components such as an electric circuit and a backlight for causing a large number of liquid crystal panels (liquid crystal cells) thus assembled to perform a display operation. Complete as.
According to the above-described method for manufacturing a liquid crystal display panel, a mask pattern image (latent image pattern) is formed on the photosensitive substrate (sheet substrate P) using the exposure method or exposure apparatus of the above-described embodiment (step S401). And a step of processing (developing, etching, etc.) the photosensitive substrate on which the latent image pattern is formed by this process (the other part of step S401).

According to the exposure method or the exposure apparatus, since the overlay accuracy in the entire pattern formation region of the sheet substrate P can be improved as a whole, the device can be manufactured with high accuracy and high yield.
In addition, this invention is not limited to the above-mentioned embodiment, A various structure can be taken in the range which does not deviate from the summary of this invention.

  DESCRIPTION OF SYMBOLS 10,10A ... In-line exposure inspection system, EX, EXA ... Exposure apparatus, M ... Mask, PL ... Projection optical system, P ... Sheet substrate, 14 ... Supply roller, 16 ... Winding roller, 18 ... Resist coater, 20 ... Exposure Main unit, 21, 21A ... Image position inspection device, 22, 70 ... Resin layer forming device, 24 ... Suction device, 26 ... Mark detection device, 36A, 36B ... Substrate alignment system, 38A, 38B ... Mask mark, 42A, 42B ... Board mark, 50 ... Main control device, 74 ... Coloring device

Claims (19)

A position inspection method for obtaining position information of a pattern formed on a substrate by irradiating the substrate with ultraviolet light ,
Forming a resin layer whose hydrophilicity is changed by the ultraviolet light in a predetermined region of the substrate;
Irradiating the resin layer with the ultraviolet light to form a partial pattern of the pattern;
Coloring and revealing the partial pattern whose hydrophilicity has been changed by the irradiation of the ultraviolet light with an ink material without substantially affecting the region other than the predetermined region of the substrate;
Detecting the partial pattern manifested by the coloring and measuring positional information of the partial pattern;
A position inspection method comprising: The resin whose hydrophilicity changes is a polyimide resin,
Wherein forming the resin layer, according to claim 1, characterized in that it comprises the the applying the polyimide resin in a predetermined region, and heating the polyimide resin coated on the predetermined area Position inspection method. Position inspection method according to claim 1 or 2, wherein the ink material is characterized by containing mercury nanoparticles. Measuring the position information of the partial pattern includes measuring an amount of positional deviation between the partial pattern that is made visible by the coloring in the predetermined region and a base mark formed on the substrate. The position inspection method according to any one of claims 1 to 3 . The position inspection method according to claim 4 , wherein the predetermined area is an area adjacent to the base mark. The substrate is positioned inspection method according to any one of claims 1 to 5, characterized in that it is formed into a sheet. In the exposure method of irradiating the substrate with ultraviolet light and sequentially forming a plurality of patterns including the first and second patterns on the substrate,
Forming a first partial pattern of the first pattern in a first region of the substrate;
Forming a second partial pattern of the second pattern in a second region corresponding to the first region of the substrate;
The position inspection method according to any one of claims 1 to 6 , wherein the first partial pattern that is made visible by the coloring and the second partial pattern that is made visible by the coloring are detected. and measuring the position information of the second partial pattern for the first partial pattern,
An exposure method comprising: 8. The exposure method according to claim 7 , further comprising correcting a pattern formation position with respect to the substrate based on position information of the second partial pattern with respect to the first partial pattern. Based on the detection result of the position of the substrate mark formed in advance on the substrate, the pattern forming region for the display element set on the substrate is positioned and irradiated with the ultraviolet light away from the substrate mark. An exposure method comprising:
Before irradiating the ultraviolet light onto the pattern forming region on the substrate, in a predetermined region on the substrate remote from the pattern forming regions with proximity to the substrate marks, resin hydrophilicity is changed by the ultraviolet light Forming a layer;
And forming said on irradiation of the ultraviolet light to the pattern forming region, the mark pattern to be aligned with the substrate marks by irradiating the ultraviolet light to the resin layer on the substrate,
Coloring the mark pattern whose hydrophilicity has been changed by the irradiation of the ultraviolet light with an ink material so as to be manifested without substantially affecting a region other than the predetermined region on the substrate;
Measuring a relative positional relationship between the manifested mark pattern and the substrate mark, and storing an alignment error between the pattern formation region on the substrate and the ultraviolet ray;
And that on the basis of the registration error which is the storage, when irradiating the ultraviolet light in addition to the pattern formation region on the substrate, for correcting the relative position between the substrate and the ultraviolet light,
An exposure method comprising: Using the exposure method according to any one of claims 7 to 9 to form a pattern on the substrate;
Processing the substrate on which the pattern is formed based on the pattern;
A device manufacturing method including: A position inspection device for obtaining position information of a pattern formed on a substrate by irradiation with ultraviolet exposure light,
A resin layer forming apparatus for forming a resin layer whose hydrophilicity is changed by irradiation of the exposure light in a predetermined region of the substrate;
After at least a partial pattern of the pattern is formed on the resin layer by irradiation with the exposure light, hydrophilicity can be obtained by irradiation with the exposure light without substantially affecting a region other than the predetermined region of the substrate. The partial pattern revealing device including a colored portion that colors and reveals the partial pattern with changed properties with an ink material ;
A pattern measuring device for detecting the manifested partial pattern and measuring positional information of the partial pattern;
A position inspection apparatus comprising: The resin layer whose hydrophilicity changes is a polyimide resin,
The said resin layer forming apparatus contains the application part which apply | coats the said polyimide resin to the said predetermined area | region, and the heating part which heats the said polyimide resin apply | coated to the said predetermined area | region, The Claim 11 characterized by the above-mentioned. Position inspection device. The pattern measurement apparatus, and the partial patterns that are manifested in the predetermined region by the colored, to claim 11 or 12, characterized in that to measure the positional deviation amount between the base mark formed on the substrate The described position inspection device. The position inspection apparatus according to claim 11 , wherein the substrate is formed in a sheet shape. An exposure apparatus that irradiates a substrate with ultraviolet exposure light to form a pattern on the substrate,
The position inspection device according to any one of claims 11 to 14 ,
An exposure optical system that forms the pattern by irradiating the exposure light to a region including the predetermined region of the substrate;
An exposure apparatus comprising: A board measuring device for measuring position information of the board;
The exposure apparatus according to claim 15 , further comprising: a control device that corrects a measurement result of the substrate measurement device based on a measurement result of the position inspection device. Forming a pattern on a substrate using the exposure apparatus according to claim 15 or 16 ,
Processing the substrate on which the pattern is formed based on the pattern;
A device manufacturing method including: The position inspection device according to any one of claims 11 to 14 ,
A transport mechanism for moving the substrate in a predetermined direction;
A photosensitive layer forming apparatus for forming a photosensitive layer that is exposed to the exposure light in an area other than the predetermined area of the substrate;
An exposure optical system that forms the pattern by irradiating the exposure light to a region including the predetermined region of the substrate;
A control device that performs processing according to the position information measured by the position inspection device;
An in-line inspection system comprising: Comprising a substrate measuring device for measuring information relating to the movement position of the substrate;
The in-line inspection system according to claim 18 , wherein the control device corrects a measurement result of the substrate measurement device based on the position information measured by the position inspection device.

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