JP5222165B2 - 光源装置及びそれを有するヘッドアップディスプレイ装置 - Google Patents
光源装置及びそれを有するヘッドアップディスプレイ装置 Download PDFInfo
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- JP5222165B2 JP5222165B2 JP2009014892A JP2009014892A JP5222165B2 JP 5222165 B2 JP5222165 B2 JP 5222165B2 JP 2009014892 A JP2009014892 A JP 2009014892A JP 2009014892 A JP2009014892 A JP 2009014892A JP 5222165 B2 JP5222165 B2 JP 5222165B2
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- 239000010409 thin film Substances 0.000 claims description 52
- 239000010408 film Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
- 239000011147 inorganic material Substances 0.000 claims description 8
- 241000872198 Serjania polyphylla Species 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 229910005540 GaP Inorganic materials 0.000 description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 125000002066 L-histidyl group Chemical group [H]N1C([H])=NC(C([H])([H])[C@](C(=O)[*])([H])N([H])[H])=C1[H] 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002816 nickel compounds Chemical class 0.000 description 1
- -1 nickel nitride Chemical class 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/01—Head-up displays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Instrument Panels (AREA)
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Description
2 ミラー
4 ホログラムミラー
10 光源装置
11 LEDアレイ
12 基板
16 平坦化膜
17 アノード回路
18 カソード回路
23 アノード配線
24 カソード配線
25 反射膜
31、31a−1、31a−2、31a−3、31b−1、31b−2、31b−3、31c−1、31c−2、31c−3 LED素子
35 遮光層
Claims (8)
- (a)ヘッドアップディスプレイ装置に使用される光源装置であって、
(b)金属基板と、
(c)該金属基板上に形成された絶縁膜から成る平坦化膜と、
(d)該平坦化膜上に形成された金属薄膜から成る複数の反射膜と、
(e)該複数の反射膜のそれぞれに分子間力により接合されている二次元状に配列された複数のLED薄膜と、
(f)該複数のLED薄膜のそれぞれの第1の電極に電気的に接続された複数の第1配線と、
(g)前記反射膜を介して前記複数のLED薄膜のそれぞれの第2の電極に電気的に接続され、前記第1配線と略直交する複数の第2配線と、
(h)前記複数のLED薄膜のうち第1の方向に配列されたLED薄膜を選択的に駆動する第1の駆動素子と、
(i)前記複数のLED薄膜のうち前記第1の方向と直交する第2の方向に配列されたLED薄膜を選択的に駆動する第2の駆動素子とを有することを特徴とする光源装置。 - 前記複数のLED薄膜は、少なくとも3つの異なる波長で発光するLED薄膜を含み、
同じ波長で発光するLED薄膜は、前記第1の方向又は第2の方向のいずれか一方向に配列されている請求項1に記載の光源装置。 - 前記LED薄膜は、無機材料をエピタキシャル成長させた積層薄膜であって、pn接合デバイスである請求項1に記載の光源装置。
- 前記金属基板は、取付孔を備える請求項1に記載の光源装置。
- (a)金属基板と、該金属基板上に形成された絶縁膜から成る平坦化膜と、該平坦化膜上に形成された金属薄膜から成る複数の反射膜と、該複数の反射膜のそれぞれに分子間力により接合されている二次元状に配列された複数のLED薄膜と、該複数のLED薄膜のそれぞれの第1の電極に電気的に接続された複数の第1配線と、前記反射膜を介して前記複数のLED薄膜のそれぞれの第2の電極に電気的に接続され、前記第1配線と略直交する複数の第2配線と、前記複数のLED薄膜のうち第1の方向に配列されたLED薄膜を選択的に駆動する第1の駆動素子と、前記複数のLED薄膜のうち前記第1の方向と直交する第2の方向に配列されたLED薄膜を選択的に駆動する第2の駆動素子とを有する光源装置と、
(b)ミラーと、
(c)ホログラムミラーとを有することを特徴とするヘッドアップディスプレイ装置。 - 前記第1配線及び前記第2配線の上を覆い、前記複数のLED薄膜のそれぞれの周囲を包囲するように形成された遮光層を更に有する請求項1に記載の光源装置。
- 前記遮光層は、顔料で黒色に着色したフォトレジストから成る請求項6に記載の光源装置。
- 前記光源装置は、前記第1配線及び前記第2配線の上を覆い、前記複数のLED薄膜のそれぞれの周囲を包囲するように形成された遮光層を更に有する請求項5に記載のヘッドアップディスプレイ装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009014892A JP5222165B2 (ja) | 2009-01-27 | 2009-01-27 | 光源装置及びそれを有するヘッドアップディスプレイ装置 |
EP10151530.2A EP2211386B1 (en) | 2009-01-27 | 2010-01-25 | Light source apparatus and head-up display apparatus incorporating the light source apparatus |
US12/656,301 US8421710B2 (en) | 2009-01-27 | 2010-01-25 | Light source apparatus and head-up display apparatus incorporating the light source apparatus |
CN201010104513.9A CN101789206B (zh) | 2009-01-27 | 2010-01-27 | 光源装置和包括该光源装置的平视显示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009014892A JP5222165B2 (ja) | 2009-01-27 | 2009-01-27 | 光源装置及びそれを有するヘッドアップディスプレイ装置 |
Publications (2)
Publication Number | Publication Date |
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JP2010177224A JP2010177224A (ja) | 2010-08-12 |
JP5222165B2 true JP5222165B2 (ja) | 2013-06-26 |
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JP2009014892A Active JP5222165B2 (ja) | 2009-01-27 | 2009-01-27 | 光源装置及びそれを有するヘッドアップディスプレイ装置 |
Country Status (4)
Country | Link |
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US (1) | US8421710B2 (ja) |
EP (1) | EP2211386B1 (ja) |
JP (1) | JP5222165B2 (ja) |
CN (1) | CN101789206B (ja) |
Cited By (1)
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US11620937B2 (en) | 2020-07-14 | 2023-04-04 | Samsung Electronics Co.. Ltd. | Light source device and light emission control method |
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JP2012108397A (ja) * | 2010-11-19 | 2012-06-07 | Nippon Seiki Co Ltd | 表示装置 |
WO2012085735A2 (en) * | 2010-12-21 | 2012-06-28 | Koninklijke Philips Electronics N.V. | Lighting system and method of manufacture |
TW201324736A (zh) * | 2011-12-08 | 2013-06-16 | Genesis Photonics Inc | 發光裝置 |
JP5671486B2 (ja) * | 2012-01-27 | 2015-02-18 | 株式会社沖データ | 発光パネル、及びそれを備えたヘッドアップディスプレイ |
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JP2014013818A (ja) * | 2012-07-04 | 2014-01-23 | Sony Corp | デバイスおよび電子装置 |
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2009
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2010
- 2010-01-25 US US12/656,301 patent/US8421710B2/en active Active
- 2010-01-25 EP EP10151530.2A patent/EP2211386B1/en active Active
- 2010-01-27 CN CN201010104513.9A patent/CN101789206B/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11620937B2 (en) | 2020-07-14 | 2023-04-04 | Samsung Electronics Co.. Ltd. | Light source device and light emission control method |
Also Published As
Publication number | Publication date |
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EP2211386B1 (en) | 2019-10-16 |
US20100188720A1 (en) | 2010-07-29 |
JP2010177224A (ja) | 2010-08-12 |
EP2211386A3 (en) | 2014-08-27 |
EP2211386A2 (en) | 2010-07-28 |
US8421710B2 (en) | 2013-04-16 |
CN101789206B (zh) | 2014-10-29 |
CN101789206A (zh) | 2010-07-28 |
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