JP5210439B2 - High pressure processor and high pressure sealing method - Google Patents

Description

  The present invention relates to a high-pressure processing apparatus and a high-pressure sealing method, and more particularly to a high-pressure processing apparatus and a high-pressure sealing capable of increasing the number of wafers that can be cleaned simultaneously as compared with the volume and preventing pressure leakage. Regarding the method.

  Generally, the high-pressure processor is an apparatus used for supercritical dry cleaning using carbon dioxide, and the internal pressure is about 30 to 50 bar in the initial stage, and the cleaning process proceeds. The pressure is about 120 to 300 bar.

  Thus, the maintenance of the high-pressure internal atmosphere is absolutely necessary for the cleaning process, and Patent Document 1 discloses a structure of a high-pressure processor that prevents such pressure leakage.

  However, in the conventional high-pressure processor having such a structure, since the wafer mounting device for mounting the wafer moves up and down during the cleaning process, the volume of the apparatus becomes large, especially as the number of wafers to be processed simultaneously increases. Since a space for mounting the wafer and moving up and down is necessary, the increase in the volume is further deepened.

  Such an increase in volume can induce an increase in the operating distance of the wafer loading and unloading apparatus, which can lead to a decrease in productivity due to a delay in the cleaning process. It was.

  Moreover, in order to maintain airtightness, the first sealing agent and the second sealing agent having a “U” shape are used, but high-pressure carbon dioxide flows into the central portion of the “U” shape. In this case, a force that pushes the upper element upward acts, and as a result, there is a problem that high-pressure carbon dioxide flows out and it is not easy to maintain the pressure. Since the replacement cycle of the agent and the second sealant is short and the cleaning process cannot proceed during replacement, there is a problem in that productivity is reduced.

Korean Patent Registration No. 10-0731209

  The present invention has been made in view of the above-described problems, and an object thereof is to provide a high-pressure processor and a high-pressure sealing method in which pressure leakage does not occur due to internal pressure.

  Another object of the present invention is to provide a high-pressure processor and a high-pressure sealing method capable of processing a wafer at a high pressure while maintaining the sealing state without moving the wafer up and down.

  Yet another object of the present invention is to completely prevent the occurrence of pressure leakage during the progress of the treatment process, and to minimize the exposure of the airtight maintenance means to high pressure carbon dioxide and additives. An object of the present invention is to provide a high-pressure processor and a high-pressure sealing method that can extend the service life.

  Another object of the present invention is to minimize the friction of the mechanical drive part, reduce the generation of foreign matter, and prevent the occurrence of pressure leakage due to wear due to the use of the equipment. It is an object of the present invention to provide a high-pressure processor and a high-pressure sealing method that can extend the life of the apparatus.

  In order to achieve the above object, a high-pressure processor according to the present invention is provided with a high-pressure carbon dioxide supplied inside to clean or rinse a wafer with the high-pressure carbon dioxide or dry a microelectromechanical system. In the processor, a door for blocking pressure leakage is installed between the inside and outside of the high-pressure processor, and the door is located between the inside and outside of the high-pressure processor by the internal pressure, It closely adheres to a door cover that provides a space where wafers can be loaded and unloaded to prevent pressure leakage.

  The high-pressure sealing method according to the present invention is a method in which high-pressure carbon dioxide or high-pressure carbon dioxide and an additive are supplied, and the wafer is cleaned or rinsed in a pressurized atmosphere or the microelectromechanical system is dried. The high pressure carbon dioxide or the pressure of the high pressure carbon dioxide and the additive prevents the leakage of pressure by bringing the door into close contact with the door cover provided with a space where the wafer is loaded and unloaded. Before the difference occurs, the degree of adhesion can be adjusted by moving the door forward and backward.

  The high-pressure processor and the high-pressure sealing method according to the present invention can maintain the high-pressure atmosphere of the high-pressure processor without leakage using the difference between the internal processing pressure and the external pressure, and can ensure the reliability of the process. There is an effect.

  In addition, the high-pressure processor and the high-pressure sealing method according to the present invention can minimize the volume by loading, unloading, and cleaning in a state where the wafer is fixed without moving up and down, and is limited to the installation space. There is an effect that can be installed without being done.

  In addition, the high-pressure processor according to the present invention can easily maintain the airtightness of the door even at the initial pressure, minimize the exposure of the airtight part to the high pressure carbon dioxide and the additive, and extend the life of the airtight part. There is an effect that can be made.

  In addition, the high-pressure processor according to the present invention can move the door up and down, and can also move back and forth with the door closed, improving airtightness, The friction can be minimized, the amount of wear can be reduced, the life of the high-pressure processor can be extended, and the generation of foreign matter can be prevented.

It is a perspective view of the high-pressure processor by this invention. It is a partial cross section figure which shows the state which closed the door in FIG. FIG. 2 is a partial cross-sectional view illustrating a state in which the door is opened in FIG. 1. It is a disassembled perspective view of the door applied to the high-pressure processor by this invention. It is a perspective view of the wafer support part applied to this invention in the state in which the wafer was mounted. It is a partial expansion perspective view of a wafer support part.

  Hereinafter, preferred embodiments of the high-pressure processor according to the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a perspective view of a high-pressure processor according to the present invention, FIG. 2 is a partial cross-sectional view showing a closed state of the door in FIG. 1, and FIG. 3 is a state in which the door is opened in FIG. FIG. 4 is an exploded perspective view of a door applied to the high-pressure processor according to the present invention.

  1 to 4, the high-pressure processor according to the present invention is provided with a supply port 11 to which high-pressure carbon dioxide is supplied, and a wafer storage space 12 connected to the supply port 11 and A main body 10 in which an opening / closing space 13 higher than the upper and lower spaces of the wafer storage space 12 is positioned in front of the wafer storage space 12 and the wafer storage space 12, and a plurality of wafers are vertically separated from each other. The wafer support 20 for supplying high-pressure carbon dioxide supplied through the supply port 11 through a plurality of supply holes between the wafers and the cylinder 31 to the inside of the door cover 46 by driving the cylinder 31. A door drive unit 30 including a moving shaft 32 that moves up and down in an inserted and installed state, and is connected to a moving shaft 32 of the door drive unit 30 via a connecting unit 33; Driven up and down inside the closed space 13, the loading and unloading of the wafer to enable, and a door 40 to maintain the airtightness during the cleaning process.

  The door 40 is connected to the connecting portion 33 in a state of being close to the inner surface of the door cover 46, and the fixed door 41 is transmitted by a plurality of bellows 45 and a fixed door 41 to which the vertical movement of the door driving unit 30 is transmitted. Are connected to the movable door 42, and the distance between the fixed door 41 is adjusted by the action of the bellows 45, and is exposed to a hole provided in a central portion of the fixed door 41, and external air is exposed to the bellows. 45, or an interval adjusting port 44 for discharging the air of the bellows 45 to the outside, and an O-ring 43 provided at the end of the movable door 42 and maintaining airtightness.

  Hereinafter, the configuration and operation of the high-pressure processor according to the present invention configured as described above will be described in more detail.

  First, the main body 10 is provided with an open / close space 13 inside the front stage so that the door 40 can be opened and closed, and a rear stage of the open / close space 13 is compared with the open / close space 13. A wafer storage space 12 having a lower height is provided.

  The wafer storage space 12 is a space where high-pressure carbon dioxide supplied through a supply port 11 protruding from the rear of the main body 10 is located, and has a minimum margin space for maintaining the pressure. It is preferable.

  In the drawing, the door 40 of the main body 10 is illustrated as being provided on the front surface. However, if necessary, the door 40 may be rotated and disposed so as to be positioned on the upper surface.

  Further, although the door 40 is illustrated as being maintained in the closed state when lowered, the structure can be easily changed to a structure for closing the main body 10 when the door 40 is lifted as necessary.

  Although not shown, an ultrasonic generator can be added to the main body 10 for easy mixing of the inflowing carbon dioxide and the additive. This can be applied regardless of the position or structure as long as it is easy to seal and can generate a high-frequency vibration inside the main body 10.

  A wafer support 20 is fastened to the wafer storage space 12.

  FIG. 5 is a perspective view of the wafer support portion 20 in a state where the wafer is mounted, and FIG. 6 is a partially enlarged perspective view of the wafer support portion 20.

  Referring to FIGS. 5 and 6, the wafer storage space 12 applied to the present invention is a high-pressure carbon dioxide supplied to the supply port 11 or an additive mixed with high-pressure carbon dioxide in the vertical direction. Dispersion supply unit 21 provided with dispersion grooves 23 provided inside for dispersing and supplying carbon dioxide supplied through the supply holes 22 along the surface of the wafer. And a plurality of wafers vertically arranged from both side ends of the distributed supply unit 21, and provided with a holding projection 25 on each inner side, and a wafer holding unit 24 for holding the wafer.

  As the additive, a cleaning additive for cleaning, a rinse additive for rinsing, or a dry additive for drying can be used.

  With this configuration, the wafer support unit 20 can mount a large number of wafers, and has a fixed structure rather than a structure that moves up and down as in the prior art.

  Although the supply port 11 and the supply line connected to the supply port 11 are also fixed due to the fixed structure, the probability that leakage will occur when high-pressure carbon dioxide is supplied. Can be reduced.

  Although not shown, the bottom surface of the main body 10 includes a number of discharge ports through which high-pressure carbon dioxide that has passed through the wafer can be selectively discharged to the outside.

  The cylinder 31 is supported by a support base (reference number omitted) and generates a driving force for driving the moving shaft 32 up and down via a link 34. In the drawing, the cylinder 31 is illustrated as being located on the upper side of the main body 10, but it is natural that the shape of the link portion 34 can be changed and positioned on the side surface or the back surface of the main body 10, and stable. In order to generate the driving force, a large number of them can be arranged and replaced with a motor.

  The moving shaft 32 covers the front surface of the open / close space portion 13 of the main body 10 and is inserted vertically into both side surface portions of the door cover 46 having an opening that allows loading and unloading of the wafer. Yes.

  A connecting portion 33 for coupling with the door 40 is provided at the end of the moving shaft 32, and the connecting portion 33 is located inside the opening of the door cover 46 and outside the fixed door 41 of the door 40. Combined with

  Accordingly, the drive of the cylinder 31 causes the door 40 to move up and down, and the door 40 seals the opening of the door cover 46 or moves to the upper side of the opening to open the open / close space portion. 13 is located on the top side, allowing the wafer to be loaded and unloaded. Here, the meaning of fixing of the fixed door 41 is a door in a state of being fixed without moving back and forth.

  The door 40 includes a fixed door 41 to which the drive of the cylinder 31 is transmitted, and a movable door 42 that can move forward and backward of the main body 10. The fixed door 41 and the movable door 42 are coupled by a plurality of bellows 45.

  Accordingly, when air flows into the bellows 45 with the fixed door 41 fixed in the front-rear direction, the movable door 42 moves backward away from the door cover 46, and the internal air is removed from the outside. If it flows out, it moves forward so as to be in close contact with the door cover 46.

  Such inflow and outflow of air are enabled by a distance adjusting port 44 fixed to the movable door 42 and connected to the bellows 45 by a conduit through which air can flow. This will be described in more detail.

  The distance adjusting port 44 must be exposed so that it can be connected to an external vacuum and pressure device. For this reason, the distance adjusting port 44 is provided on a part of the fixed door 41. It has a hole to be exposed.

  In this structure, the cylinder 31 is driven to move the door 40 upward in order to load the wafer on the wafer support 20 at first.

  The driving force of the cylinder 31 is transmitted to the moving shaft 32 through the link portion 34, and the moving shaft 32 is lifted so that the door 40 coupled to the moving shaft 32 through the connecting portion 33 is lifted.

  At this time, air is introduced into the bellows 45 of the door 40, and thus the moving door 42 is separated from the door cover 46. That is, the door cover 46 and the O-ring 43 of the moving door 42 are separated from each other, so that the friction during the upward movement of the door 40 can be reduced, the generation of foreign matters can be prevented, and the life of the apparatus can be extended.

  As described above, with the door 40 opened, a large number of wafers are simultaneously loaded by a robot or the like outside and mounted on the wafer support unit 20. After the wafer is mounted in this manner, the door 40 must be closed for the cleaning process.

  For this reason, if the cylinder 31 generates a downward driving force, the moving shaft 32 transmitted through the link portion 34 moves downward, so that the door 40 is moved to the door cover 46. It moves downward to the opening side.

  Also at this time, the bellows 45 is filled with air, and therefore the door cover 46 and the O-ring 43 do not rub.

  If the door 40 is located at the closed position in such a state, there is a slight gap between the O-ring 43 and the door cover 46, and the gap adjustment port 44 is used to seal the gap outside. The vacuum device causes the internal air of the bellows 45 to be discharged, so that the moving door 42 moves forward, and the O-ring 43 comes into close contact with the door cover 46.

  If the cleaning process proceeds in the close contact state as described above, high-pressure carbon dioxide is initially supplied through the supply port 11, and a plurality of supply units provided vertically in the distributed supply unit 21 of the wafer support unit 20. High-pressure carbon dioxide is discharged to the dispersion grooves 23 that are supplied through the holes 22 and communicate with the supply holes 22.

  Such initial pressure is lower than the process pressure but higher than the atmospheric pressure, and the supplied carbon dioxide moves from the wafer storage space 12 to the open / close space 13 side. Airtightness between the O-ring 43 and the door cover 46 by the pressure bonding of the bellows 45 is maintained, and carbon dioxide does not flow out.

  The supply ports 11 may include two or more. Initially, carbon dioxide is supplied through a supply port at a position where carbon dioxide is not directly injected to the wafer among the plurality of supply ports 11 up to a certain pressure. Like that.

  This is because when initial liquid carbon dioxide is supplied through the supply port, the phase can be changed to dry ice due to a temperature drop due to temporary pressure reduction, and the supply port does not directly inject carbon dioxide onto the wafer as described above. In this case, carbon dioxide is supplied to prevent damage to the wafer element pattern caused by dry ice.

  As time elapses and the internal pressure of the main body 10 further increases, the moving door 42 is pressed against the door cover 46 by the pressure, and thus the pressure leaks during the process. This can be completely prevented.

  When the cleaning process is completed in this manner, although not shown in the drawings, carbon dioxide is discharged through a plurality of exhaust ports provided on the bottom surface of the main body 10, and the internal pressure of the main body 10 is equal to the external pressure. Be the same.

  If the cleaning process is completed, the air flows into the bellows 45 of the door 40 during the loading, and the moving door 42 moves backward, and the O-ring 43 and the door cover 46 do not rub. The door 40 is opened.

  When the door 40 is opened, the wafer cleaned by the robot is unloaded, and the wafer to be cleaned is loaded onto the wafer support 20.

  As described above, the high-pressure processor according to the present invention can prevent the possibility of leakage due to the movement by fixing the wafer support 20 that injects the high-pressure carbon dioxide uniformly to the wafer. 40 has a double structure, and this double structure door is designed so that it can move back and forth, enhancing the effect of leakage prevention, minimizing friction with peripheral devices and preventing foreign matter generation, extending the life of equipment Can be made.

  The high-pressure processor and the high-pressure sealing method according to the present invention can maintain the high-pressure atmosphere of the high-pressure processor without leakage using the difference between the internal processing pressure and the external pressure, and can ensure the reliability of the process. There is industrial applicability.

  In addition, the high-pressure processor and the high-pressure sealing method according to the present invention can minimize the volume by loading, unloading, and cleaning in a state where the wafer is fixed without moving up and down, and is limited to the installation space. It can be installed without being used and has industrial applicability.

  In addition, the high-pressure processor according to the present invention can easily maintain the airtightness of the door even at the initial pressure, minimize the exposure of the airtight part to the high pressure carbon dioxide and the additive, and extend the life of the airtight part. And can be used industrially.

DESCRIPTION OF SYMBOLS 10 Main body 11 Supply port 12 Wafer storage space part 13 Opening / closing space part 20 Wafer support part 21 Dispersion supply part 22 Supply hole 23 Dispersion groove 24 Wafer holding part 25 Holding protrusion 30 Door drive part 31 Cylinder 32 Moving shaft 33 Connection part 34 Link part 40 Door 41 Fixed door 42 Moving door 43 O-ring 44 Spacing adjustment port 45 Bellows 46 Door cover

Claims (11)

In a method in which high pressure carbon dioxide or high pressure carbon dioxide and additives are supplied and the wafer is cleaned or rinsed in a pressurized atmosphere or the microelectromechanical system is dried,
The pressure of the supplied high-pressure carbon dioxide or high-pressure carbon dioxide and additive prevents the leakage of pressure by bringing the door into close contact with the door cover provided with a space where the wafer is loaded and unloaded, A high-pressure sealing method in which the degree of adhesion can be adjusted by moving the door forward and backward before a pressure difference occurs. (A) open the door so that the wafer can be loaded inward using a door cover located at the interface between the interior and exterior and providing a space where the wafer can be loaded and unloaded; And retracting the door cover so that it can be separated from the door cover by a predetermined distance when the door is opened;
(B) moving the door to a position where the space of the door cover can be sealed, and moving forward so that the door cover and the door can be in close contact with each other;
(C) When the inside of the door is in a high pressure atmosphere due to cleaning, rinsing or drying treatment, the door is brought into close contact with the door cover due to a pressure difference between the inside and the outside to enhance sealing. When;
(D) after the cleaning, rinsing or drying process is completed, with the internal pressure being the same as the outside, the door is retracted and then opened to unload the processed wafer. , High pressure sealing method.   3. The air according to claim 1, wherein when the door moves forward, air is injected into a bellows provided in the center of the doors divided from each other, and when the door moves backward, the air filled in the bellows is discharged. The high-pressure sealing method described. In a high-pressure processor in which high-pressure carbon dioxide is supplied inside and the wafer is cleaned or rinsed with the high-pressure carbon dioxide or the microelectromechanical system is dried,
A door for blocking pressure leakage is installed between the inside and outside of the high-pressure processor, and the door is located between the inside and outside of the high-pressure processor by the internal pressure, and the wafer is loaded and loaded. A high-pressure processor that adheres to the door cover to provide a space that can be unloaded and prevents pressure leakage. A storage space in which high-pressure carbon dioxide is supplied to the inside and the wafer can be cleaned with the high-pressure carbon dioxide, and an open / close space that is higher than the height of the storage space in the previous stage of the storage space A main body comprising:
A wafer support unit fixedly installed in the storage space of the main body, mounting the wafer, and cleaning the inflowed high-pressure carbon dioxide to flow along the surface of the wafer;
A door cover that seals one side of the open / close space of the main body and is provided with an opening capable of loading and unloading the wafer;
A door that can move up and down in the open / close space and can move back and forth toward the door cover;
A high-pressure processor including: a door driving unit configured to drive the door in a vertical direction. The door
A fixed door to which the vertical movement of the door driving unit is transmitted in a state of being close to the inner surface of the door cover;
A movable door connected to the inner surface of the fixed door by a plurality of bellows, and the distance from the fixed door is adjusted by expansion and contraction of the bellows;
An interval adjusting port, one side of which is fixed to the movable door, is exposed to the outside by a hole provided in the central portion of the fixed door, and external air is supplied to the bellows or air of the bellows is discharged to the outside. When;
6. The high-pressure processor according to claim 4, further comprising: an O-ring that is provided at an outer edge portion of the movable door and maintains an airtightness with the door cover. The bellows
The high-pressure processor according to claim 6, wherein when the door is in a closed state, air is introduced and expanded, and when the door moves, the air is discharged to the outside and contracted. The door cover is
The high-pressure processor according to claim 6, wherein a moving shaft of the door driving unit is inserted vertically into the width thereof so that a driving force can be transmitted to the door. The wafer support is
A large number of supply holes that are fixedly installed in the storage space and that disperse and move high-pressure carbon dioxide flowing in the vertical direction, and communicate with the supply holes and spray laterally along the surface of the stored wafer. A dispersion supply unit comprising a dispersion groove for
The high-pressure processor according to claim 6, comprising a plurality of wafer holders protruding from each of both side ends of the distributed supply unit and provided with holding protrusions on the inside thereof. In the main body,
The high-pressure processor according to claim 9, further comprising an ultrasonic generator for easy mixing of the introduced carbon dioxide and the additive. In the main body,
A plurality of supply ports for supplying carbon dioxide are provided, and in order to prevent wafer damage due to dry ice by supplying the initial carbon dioxide, only the supply ports at positions where carbon dioxide is not directly injected to the wafer among the supply ports are provided. Carbon dioxide is supplied through the high-pressure processor according to claim 4 or 5.

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