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JP5261085B2 - Substrate placing mechanism, substrate processing apparatus, substrate placing mechanism control method, and storage medium - Google Patents

Substrate placing mechanism, substrate processing apparatus, substrate placing mechanism control method, and storage medium Download PDF

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JP5261085B2
JP5261085B2 JP2008228751A JP2008228751A JP5261085B2 JP 5261085 B2 JP5261085 B2 JP 5261085B2 JP 2008228751 A JP2008228751 A JP 2008228751A JP 2008228751 A JP2008228751 A JP 2008228751A JP 5261085 B2 JP5261085 B2 JP 5261085B2
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Prior art keywords
substrate
lifter
processed
mounting
mounting mechanism
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JP2008228751A
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JP2010062461A (en
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直也 三枝
昭彦 志村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008228751A priority Critical patent/JP5261085B2/en
Priority to KR1020090082972A priority patent/KR20100029042A/en
Priority to TW098129876A priority patent/TWI512881B/en
Priority to CN200910171076XA priority patent/CN101667520B/en
Publication of JP2010062461A publication Critical patent/JP2010062461A/en
Priority to KR1020120049188A priority patent/KR20120054004A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/061—Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/063—Transporting devices for sheet glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a method for controlling a base plate carrying mechanism, a base plate treating device and a base plate carrying mechanism. The base plate carrying mechanism can reliably support the treated base plate, and can evenly treat the base plate. The base plate carrying mechanism includes: a first elevator which is equipped for supporting the periphery edge section of the treated base plate and is freely projected or emerged at the inner side of the carrying bench; and a second elevator which can be equipped outside the carrying bench and can be moved to the upper side of the carrying surface of the carrying bench, and is at the position which is more closer to the central part of the treated base plate than the position of the treated base plate for supporting the first elevator, under the state that the backing side of the treated base plate is partly connected to the carrying surface, the treated base plate hands over between the first elevator and the second elevator.

Description

この発明は、フラットパネルディスプレイ（ＦＰＤ）用ガラス基板等の可撓性を有する被処理基板が載置される基板載置機構、この基板載置機構を備えた基板処理装置、基板載置機構の制御方法及びこの制御方法をコンピュータに実行させるコンピュータ読み取り可能な記憶媒体に関する。   The present invention relates to a substrate placement mechanism on which a flexible substrate to be processed such as a glass substrate for a flat panel display (FPD) is placed, a substrate processing apparatus provided with the substrate placement mechanism, and a substrate placement mechanism. The present invention relates to a control method and a computer-readable storage medium that causes a computer to execute the control method.

ＦＰＤの製造プロセスにおいては、被処理基板であるＦＰＤ用のガラス基板に対して、ドライエッチングやスパッタリング、化学気相成長（ＣＶＤ）等の各種処理が施される。このような処理は通常、チャンバー内に設けられた載置台にガラス基板を載置した状態で行われ、載置台に対する基板のローディングおよびアンローディングは、一般的に、載置台の載置面に対して突没可能に設けられた複数の昇降ピン（リフター）によって行われる。基板をローディングする際には、昇降ピンを上昇させて載置台の載置面から突出させ、搬送アーム等の搬送機構によって搬送されたガラス基板を昇降ピン上に移し替えた後、昇降ピンを下降させて、ガラス基板を載置台の載置面に載置させる。また、基板をアンローディングする際には、昇降ピンを上昇させて、ガラス基板を載置台の載置面から離間させた後、昇降ピン上のガラス基板を、搬送アーム等の搬送機構に載せ替える。   In the FPD manufacturing process, various processes such as dry etching, sputtering, and chemical vapor deposition (CVD) are performed on a glass substrate for FPD that is a substrate to be processed. Such processing is usually performed in a state where a glass substrate is mounted on a mounting table provided in a chamber, and generally loading and unloading of a substrate with respect to the mounting table is performed on the mounting surface of the mounting table. And a plurality of lifting pins (lifters) provided so as to be able to project and retract. When loading the substrate, the lifting pins are raised to protrude from the mounting surface of the mounting table, and after the glass substrate transferred by the transfer mechanism such as the transfer arm is transferred onto the lifting pins, the lifting pins are lowered. Then, the glass substrate is placed on the placement surface of the placement table. Further, when unloading the substrate, the lifting pins are raised to separate the glass substrate from the mounting surface of the mounting table, and then the glass substrate on the lifting pins is transferred to a transport mechanism such as a transport arm. .

近時、ＦＰＤは薄型化、あるいは大型化が指向され、厚さが１．１ｍｍ、０．７ｍｍ、０．４ｍｍ以下のような薄いガラス基板や、一辺が２ｍを超えるような巨大なガラス基板も出現するに至っている。   Recently, FPDs are becoming thinner or larger, and thin glass substrates with a thickness of 1.1 mm, 0.7 mm, 0.4 mm or less, and huge glass substrates with a side exceeding 2 m are also available. It has come to appear.

このように薄い、あるいは巨大なガラス基板は撓みやすく、昇降ピンがガラス基板の外周縁部を支持するだけでは、確実な支持が困難になってきている。   Such a thin or huge glass substrate is easy to bend, and it is difficult to reliably support the glass substrate by simply supporting the lifting pins on the outer peripheral edge of the glass substrate.

そこで、ガラス基板を確実に支持できるように、載置台の中央部にも昇降ピンを設けることが行われている（例えば、特許文献１参照）。
特開２００２−２４６４５０号公報 Therefore, raising and lowering pins are also provided at the center of the mounting table so that the glass substrate can be reliably supported (see, for example, Patent Document 1).
JP 2002-246450 A

しかしながら、載置台は、各種処理時に下部電極として機能する。このため、載置台の中央部に昇降ピンを設けると、この昇降ピンを設けた箇所が下部電極上の特異点となって、被処理基板に対する均一な処理が損なわれてしまう、という事情がある。   However, the mounting table functions as a lower electrode during various processes. For this reason, when a raising / lowering pin is provided in the center of the mounting table, there is a circumstance that the portion where the raising / lowering pin is provided becomes a singular point on the lower electrode, and uniform processing on the substrate to be processed is impaired. .

この発明は、被処理基板を確実に支持でき、かつ、被処理基板に対する均一な処理も可能な基板載置機構、この基板載置機構を備えた基板処理装置、基板載置機構の制御方法及びこの制御方法をコンピュータに実行させるコンピュータ読み取り可能な記憶媒体を提供することを目的とする。   The present invention provides a substrate mounting mechanism that can reliably support a substrate to be processed and can perform uniform processing on the substrate to be processed, a substrate processing apparatus including the substrate mounting mechanism, a method for controlling the substrate mounting mechanism, and It is an object of the present invention to provide a computer-readable storage medium that causes a computer to execute this control method.

上記目的を達成するために、この発明の第１の態様に係る基板載置機構は、被処理基板を載置する載置台と、前記載置台の内側に、突没自在に設けられ、前記被処理基板の外周縁部を支持する第１リフターと、前記載置台の外側に、前記載置台の載置面の上方に移動可能に設けられ、前記第１リフターが前記被処理基板を支持する位置よりも前記被処理基板の中央部分を支持する第２リフターと、を具備し、前記被処理基板の裏面を前記載置面上に部分的に当接させた状態において、前記第１リフターと前記第２リフター間にて前記被処理基板の受け渡しを行うように構成されている。   In order to achieve the above object, a substrate mounting mechanism according to a first aspect of the present invention is provided on a mounting table on which a substrate to be processed is mounted and on the inner side of the mounting table so as to protrude and retract. A first lifter that supports the outer peripheral edge of the processing substrate, and a position that is provided on the outside of the mounting table so as to be movable above the mounting surface of the mounting table, and where the first lifter supports the substrate to be processed A second lifter that supports a central portion of the substrate to be processed, and in a state where the back surface of the substrate to be processed is partially in contact with the placement surface, the first lifter and the The substrate to be processed is transferred between the second lifters.

また、この発明の第２の態様に係る基板処理装置は、被処理基板に処理を施すチャンバーと、前記チャンバーの内部に設けられ、前記被処理基板が載置される基板載置機構と、を備えた基板処理装置であって、前記基板載置機構に、上記第１の態様に係る基板載置機構が用いられている。   In addition, a substrate processing apparatus according to a second aspect of the present invention includes a chamber that performs processing on a substrate to be processed, and a substrate mounting mechanism that is provided inside the chamber and on which the substrate to be processed is mounted. The substrate processing apparatus includes the substrate mounting mechanism according to the first aspect.

また、この発明の第３の態様に係る基板載置機構の制御方法は、被処理基板を載置する載置台と、前記載置台の内側に、突没自在に設けられ、前記被処理基板の外周縁部を支持する第１リフターと、前記載置台の外側に、前記載置台の載置面の上方に移動可能に設けられ、前記第１リフターが前記被処理基板を支持する位置よりも前記被処理基板の中央部分を支持する第２リフターと、を備えた基板載置機構の制御方法であって、前記第２リフターが、前記被処理基板を搬送してきた搬送機構から前記被処理基板を前記載置面の上方で受け取り、前記受け取った被処理基板の裏面を前記載置面上に部分的に当接させる工程と、前記被処理基板の裏面が前記載置面上に部分的に当接された状態で、前記第１リフターが前記被処理基板の外周縁部を持ち上げ、前記被処理基板を前記第２リフターから離脱させる工程と、前記被処理基板が前記第２リフターから離脱した状態で、前記第２リフターを前記載置面の上方から退避させる工程と、前記第２リフターが前記載置面の上方から退避された状態で、前記第１リフターが前記被処理基板を前記載置面上に載置する工程と、を具備する。   According to a third aspect of the present invention, there is provided a substrate mounting mechanism control method comprising: a mounting table on which a substrate to be processed is mounted; A first lifter that supports the outer peripheral edge, and is provided on the outside of the mounting table so as to be movable above the mounting surface of the mounting table, and the first lifter is positioned above the position where the substrate to be processed is supported. And a second lifter for supporting a central portion of the substrate to be processed. The method for controlling the substrate mounting mechanism includes: a second lifter that transfers the substrate to be processed from a transport mechanism that transports the substrate to be processed; Receiving the upper surface of the mounting surface and partially contacting the back surface of the received substrate to be processed on the mounting surface; and the back surface of the substrate to be processed is partially applied to the mounting surface. The first lifter is in contact with the outer peripheral edge of the substrate to be processed. Lifting and removing the substrate to be processed from the second lifter; retreating the second lifter from above the mounting surface in a state where the substrate to be processed is detached from the second lifter; and The first lifter placing the substrate to be processed on the placement surface in a state where the second lifter is retracted from above the placement surface.

また、この発明の第４の態様に係る記憶媒体は、コンピュータ上で動作し、基板載置機構を制御するプログラムが記憶されたコンピュータ読み取り可能な記憶媒体であって、前記プログラムは、実行時に、上記第３の態様に係る基板載置機構の制御方法が行われるように、コンピュータに前記基板載置機構を制御させる。   A storage medium according to a fourth aspect of the present invention is a computer-readable storage medium that operates on a computer and stores a program for controlling the substrate mounting mechanism. A computer is caused to control the substrate placement mechanism so that the substrate placement mechanism control method according to the third aspect is performed.

この発明によれば、被処理基板を確実に支持でき、かつ、被処理基板に対する均一な処理も可能な基板載置機構、この基板載置機構を備えた基板処理装置、基板載置機構の制御方法及びこの制御方法をコンピュータに実行させるコンピュータ読み取り可能な記憶媒体を提供できる。   According to the present invention, the substrate mounting mechanism that can reliably support the substrate to be processed and can perform uniform processing on the substrate to be processed, the substrate processing apparatus including the substrate mounting mechanism, and the control of the substrate mounting mechanism It is possible to provide a method and a computer-readable storage medium that causes a computer to execute the control method.

以下、この発明の実施形態を、図面を参照して説明する。この説明に際し、全図にわたり、共通の部分には共通の参照符号を付す。   Embodiments of the present invention will be described below with reference to the drawings. In this description, common parts are denoted by common reference symbols throughout the drawings.

（第１の実施形態）
図１Ａはこの発明の第１の実施形態に係る基板載置機構を備えた基板処理装置を概略的に示す水平断面図、図１Ｂは図１Ａ中の１Ｂ−１Ｂ線に沿う断面図である。本例では、基板処理装置として、被処理基板であるフラットパネルディスプレイ（ＦＰＤ）用のガラス基板（以下、単に「基板」と記す）Ｇに対してプラズマエッチングを施すプラズマエッチング装置を例示するが、この発明はプラズマエッチング装置に限って適用されるものではない。 (First embodiment)
FIG. 1A is a horizontal sectional view schematically showing a substrate processing apparatus including a substrate mounting mechanism according to the first embodiment of the present invention, and FIG. 1B is a sectional view taken along line 1B-1B in FIG. 1A. In this example, as a substrate processing apparatus, a plasma etching apparatus that performs plasma etching on a glass substrate (hereinafter simply referred to as “substrate”) G for a flat panel display (FPD) that is a substrate to be processed is illustrated. The present invention is not limited to the plasma etching apparatus.

図１Ａ及び図１Ｂに示すように、プラズマエッチング装置１は、基板Ｇに対してエッチングを行う容量結合型平行平板プラズマエッチング装置として構成されている。ＦＰＤとしては、液晶ディスプレイ（ＬＣＤ）、エレクトロルミネセンス（Ｅｌｅｃｔｒｏ Ｌｕｍｉｎｅｓｃｅｎｃｅ；ＥＬ）ディスプレイ、プラズマディスプレイパネル（ＰＤＰ）等が例示される。   As shown in FIGS. 1A and 1B, the plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus that performs etching on a substrate G. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like.

プラズマエッチング装置１は、基板Ｇを収容する処理容器としてのチャンバー２を備えている。チャンバー２は、例えば、表面がアルマイト処理（陽極酸化処理）されたアルミニウムからなり、基板Ｇの形状に対応して四角筒形状に形成されている。   The plasma etching apparatus 1 includes a chamber 2 as a processing container that accommodates the substrate G. The chamber 2 is made of, for example, aluminum whose surface is anodized (anodized), and is formed in a square tube shape corresponding to the shape of the substrate G.

チャンバー２内の底壁には、基板Ｇを載置する載置台としてのサセプタ４が設けられている。サセプタ４は、基板Ｇの形状に対応して四角板状または柱状に形成されており、金属等の導電性材料からなる基材４ａと、基材４ａの底部を覆うように設けられて基材４ａを支持する絶縁部材４ｂとを備えている。基材４ａには、高周波電力を供給するための給電線２３が接続されており、この給電線２３には整合器２４および高周波電源２５が接続されている。高周波電源２５からは例えば１３．５６ＭＨｚの高周波電力がサセプタ４に印加され、これにより、サセプタ４が下部電極として機能するように構成されている。また、サセプタ４には、載置された基板Ｇを吸着するための図示しない静電吸着機構が内蔵されている。   A susceptor 4 as a mounting table on which the substrate G is mounted is provided on the bottom wall in the chamber 2. The susceptor 4 is formed in a square plate shape or a column shape corresponding to the shape of the substrate G, and is provided so as to cover the base 4a made of a conductive material such as metal and the bottom of the base 4a. And an insulating member 4b for supporting 4a. A power supply line 23 for supplying high-frequency power is connected to the base material 4a, and a matching unit 24 and a high-frequency power source 25 are connected to the power supply line 23. For example, high frequency power of 13.56 MHz is applied to the susceptor 4 from the high frequency power supply 25, and thereby, the susceptor 4 is configured to function as a lower electrode. The susceptor 4 has a built-in electrostatic adsorption mechanism (not shown) for adsorbing the placed substrate G.

チャンバー２の上部または上壁には、チャンバー２内に処理ガスを供給するとともに上部電極として機能するシャワーヘッド１１が、サセプタ４と対向するように設けられている。シャワーヘッド１１は、内部に処理ガスを拡散させるガス拡散空間１２が形成されているとともに、裏面またはサセプタ４との対向面に処理ガスを吐出する複数の吐出孔１３が形成されている。このシャワーヘッド１１は接地されており、サセプタ４とともに一対の平行平板電極を構成している。   A shower head 11 that supplies a processing gas into the chamber 2 and functions as an upper electrode is provided on the upper or upper wall of the chamber 2 so as to face the susceptor 4. In the shower head 11, a gas diffusion space 12 for diffusing the processing gas is formed therein, and a plurality of discharge holes 13 for discharging the processing gas are formed on the back surface or the surface facing the susceptor 4. The shower head 11 is grounded and forms a pair of parallel plate electrodes together with the susceptor 4.

シャワーヘッド１１の上面にはガス導入口１４が設けられ、このガス導入口１４には、処理ガス供給管１５が接続されており、この処理ガス供給管１５には、バルブ１６およびマスフローコントローラ１７を介して、処理ガス供給源１８が接続されている。処理ガス供給源１８からは、エッチングのための処理ガスが供給される。処理ガスとしては、ハロゲン系のガス、Ｏ２ガス、Ａｒガス等、通常この分野で用いられるガスを用いることができる。 A gas inlet 14 is provided on the upper surface of the shower head 11, and a processing gas supply pipe 15 is connected to the gas inlet 14. A valve 16 and a mass flow controller 17 are connected to the processing gas supply pipe 15. A processing gas supply source 18 is connected to the via. A processing gas for etching is supplied from the processing gas supply source 18. As the processing gas, a gas usually used in this field, such as a halogen-based gas, an O 2 gas, or an Ar gas, can be used.

チャンバー２の底壁には排気管１９が接続されており、この排気管１９には排気装置２０が接続されている。排気装置２０はターボ分子ポンプなどの真空ポンプを備えており、これによりチャンバー２内を所定の減圧雰囲気まで真空引き可能なように構成されている。   An exhaust pipe 19 is connected to the bottom wall of the chamber 2, and an exhaust device 20 is connected to the exhaust pipe 19. The exhaust device 20 includes a vacuum pump such as a turbo molecular pump, and is configured so that the inside of the chamber 2 can be evacuated to a predetermined reduced pressure atmosphere.

チャンバー２の側壁には、基板Ｇを搬入出するための搬入出口２１が形成されているとともに、この搬入出口２１を開閉する図示せぬゲートバルブが設けられており、搬入出口２１の開放時に、基板Ｇが、搬送機構としての搬送アーム４０により下方から支持された状態で隣接する図示せぬ搬送室、又はロードロック室との間で搬送されるように構成されている。   A loading / unloading port 21 for loading / unloading the substrate G is formed on the side wall of the chamber 2, and a gate valve (not shown) for opening and closing the loading / unloading port 21 is provided. When the loading / unloading port 21 is opened, The substrate G is configured to be transferred between an adjacent transfer chamber (not shown) or a load lock chamber while being supported from below by a transfer arm 40 as a transfer mechanism.

チャンバー２の底壁及びサセプタ４には、これらを貫通する挿通孔７ａが、サセプタ４の周縁部の位置に形成されている。さらに、サセプタ４の外側におけるチャンバー２の底壁には、挿通孔７ｂが形成されている。   In the bottom wall of the chamber 2 and the susceptor 4, an insertion hole 7 a penetrating them is formed at the peripheral edge of the susceptor 4. Further, an insertion hole 7 b is formed in the bottom wall of the chamber 2 outside the susceptor 4.

挿通孔７ａには、基板Ｇを下方から支持して昇降させる第１リフター８ａがサセプタ４の載置面に対して突没可能に挿入されている。第１リフター８ａはピンであり、突出時に基板Ｇの外周縁部に当接するように設けられている。   A first lifter 8 a that supports the substrate G from below and moves up and down is inserted into the insertion hole 7 a so as to protrude and retract with respect to the mounting surface of the susceptor 4. The first lifter 8a is a pin, and is provided so as to contact the outer peripheral edge of the substrate G when protruding.

挿通孔７ｂには、基板Ｇを下方から支持して昇降させる第２リフター８ｂが昇降可能、かつ、サセプタ４の載置面の上方に向かって移動可能なように構成されている。第２リフター８ｂがサセプタ４の載置面の上方に向かって移動することで、第２リフター８ｂは、第１リフター８ａが支持する基板Ｇの外周縁部よりも、さらに内側を支持することが可能となっている。   The insertion hole 7b is configured such that a second lifter 8b that supports the substrate G from below and moves up and down can be moved up and down and can be moved above the mounting surface of the susceptor 4. By moving the second lifter 8b toward the upper side of the mounting surface of the susceptor 4, the second lifter 8b can support the inner side further than the outer peripheral edge of the substrate G supported by the first lifter 8a. It is possible.

第１リフター８ａは、下部がチャンバー２の外側に突出しており、下端部が駆動部９ａに接続されている。駆動部９ａは、第１リフター８ａを垂直方向に昇降させる。この昇降動作により、第１リフター８ａは、サセプタ４の載置面に対して突出および没入する。   The first lifter 8a has a lower portion protruding outside the chamber 2, and a lower end portion connected to the drive portion 9a. The drive unit 9a raises and lowers the first lifter 8a in the vertical direction. By this raising / lowering operation, the first lifter 8 a protrudes and is immersed in the mounting surface of the susceptor 4.

第２リフター８ｂも第１リフター８ａと同様に、下部がチャンバー２の外側に突出し、下端部が駆動部９ｂに接続されている。駆動部９ｂは、第２リフター８ｂを垂直方法に昇降させるとともに、第２リフター８ｂをサセプタ４の載置面の上方に向かって移動させる。   Similarly to the first lifter 8a, the lower part of the second lifter 8b protrudes outside the chamber 2, and the lower end part is connected to the drive unit 9b. The drive unit 9 b moves the second lifter 8 b up and down in a vertical manner and moves the second lifter 8 b toward the upper side of the mounting surface of the susceptor 4.

駆動部９ａ、９ｂはそれぞれ、例えば、ステッピングモータやサーボモータを用いて構成される。   The drive units 9a and 9b are each configured using, for example, a stepping motor or a servo motor.

駆動部９ａ、９ｂの駆動は、マイクロプロセッサ（コンピュータ）を備えたコントローラ３１によって別個に制御される構成となっており、これにより、第１リフター８ａと第２リフター８ｂとは、互いに独立して動作することが可能に構成されている。   The driving of the drive units 9a and 9b is configured to be controlled separately by a controller 31 having a microprocessor (computer), whereby the first lifter 8a and the second lifter 8b are independent of each other. It is configured to be able to operate.

コントローラ３１には、工程管理者が駆動部９ａ、９ｂの駆動を管理するためにコマンドの入力操作等を行うキーボードや、駆動部９ａ、９ｂの駆動状況を可視化して表示するディスプレイ等からなるユーザーインターフェース３２と、駆動部９ａ、９ｂの駆動をコントローラ３１の制御にて実現するための制御プログラムや駆動条件データ等が記録されたレシピが格納された記憶部３３とが接続されている。そして、必要に応じて、ユーザーインターフェース３２からの指示等にて任意のレシピを記憶部３３から呼び出してコントローラ３１に実行させることで、コントローラ３１の制御下で駆動部９ａ、９ｂの駆動および停止が行われる。前記レシピは、例えば、ＣＤ−ＲＯＭ、ハードディスク、フラッシュメモリなどのコンピュータ読み取り可能な記憶媒体に格納された状態のものを利用したり、あるいは、他の装置から、例えば専用回線を介して随時伝送させて利用したりすることも可能である。   The controller 31 includes a keyboard on which a process manager manages the drive of the drive units 9a and 9b and a display for visualizing and displaying the drive status of the drive units 9a and 9b. The interface 32 is connected to a storage unit 33 in which a control program for realizing driving of the drive units 9a and 9b by the control of the controller 31 and a recipe in which drive condition data is recorded is stored. If necessary, an arbitrary recipe is called from the storage unit 33 by an instruction from the user interface 32 and is executed by the controller 31 so that the drive units 9a and 9b are driven and stopped under the control of the controller 31. Done. For example, the recipe is stored in a computer-readable storage medium such as a CD-ROM, a hard disk, or a flash memory, or is transmitted from another device at any time via, for example, a dedicated line. It is also possible to use it.

コントローラ３１、ユーザーインターフェース３２および記憶部３３は、駆動部９ａ、９ｂによるリフターピン８ａ、８ｂの昇降を制御する制御部を構成し、基板載置機構は、サセプタ４、第１リフター８ａ、第２リフター８ｂ、駆動部９ａ、９ｂおよび制御部により構成される。   The controller 31, the user interface 32, and the storage unit 33 constitute a control unit that controls the lifting and lowering of the lifter pins 8a and 8b by the drive units 9a and 9b, and the substrate mounting mechanism includes the susceptor 4, the first lifter 8a, and the second The lifter 8b, the drive units 9a and 9b, and a control unit are included.

図２Ａ乃至図２Ｃは、第２リフター８ｂの例を示す斜視図である。   2A to 2C are perspective views showing examples of the second lifter 8b.

図２Ａに示す第２リフター８ｂ１は、図１Ａ及び図１Ｂに示した第２リフター８ｂの一つを拡大して示したものである。第２リフター８ｂ１は、垂直方向への昇降動作と、水平方向への旋回動作とが可能なように構成されており、特に、旋回動作により、第２リフター８ｂ１を、サセプタ４の載置面の上方に向かって移動させる。   The second lifter 8b1 shown in FIG. 2A is an enlarged view of one of the second lifters 8b shown in FIGS. 1A and 1B. The second lifter 8b1 is configured so as to be able to move up and down in the vertical direction and swing in the horizontal direction. In particular, the second lifter 8b1 is moved to the surface of the mounting surface of the susceptor 4 by the turning operation. Move upward.

このような第２リフター８ｂ１は、例えば、垂直方向に昇降可能で、水平方向に回転なシャフト８ｃと、シャフト８ｃの先端部分に取り付けられ、シャフト８ｃの回転により、水平方向に旋回可能な旋回アーム８ｄとを含んで構成することができる。旋回アーム８ｄが旋回されると、旋回アーム８ｄの先端がサセプタ４の載置面の上方に移動する。旋回アーム８ｄの先端には、支持部材８ｅが取り付けられており、支持部材８ｅは、基板Ｇの裏面を、例えば、点で支持する。   Such a second lifter 8b1 is, for example, a vertically movable shaft 8c that is rotatable in the horizontal direction, and a pivot arm that is attached to the tip portion of the shaft 8c and that can pivot in the horizontal direction by the rotation of the shaft 8c. 8d. When the turning arm 8d is turned, the tip of the turning arm 8d moves above the mounting surface of the susceptor 4. A support member 8e is attached to the tip of the turning arm 8d, and the support member 8e supports the back surface of the substrate G with, for example, a point.

図２Ｂに示す第２リフター８ｂ２は、垂直方向への昇降動作と、水平方向への伸縮動作が可能なように構成されており、特に、伸縮動作により、第２リフター８ｂ２を、サセプタ４の載置面の上方に向かって移動させる。   The second lifter 8b2 shown in FIG. 2B is configured to be able to move up and down in the vertical direction and expand and contract in the horizontal direction. In particular, the second lifter 8b2 is mounted on the susceptor 4 by the expansion and contraction operation. Move upward above the placement surface.

このような第２リフター８ｂ２は、例えば、垂直方向に昇降可能なシャフト８ｆと、シャフト８ｃの先端部分に取り付けられ、水平方向に伸縮可能な伸縮アーム８ｇとを含んで構成することができる。伸縮アーム８ｇが伸びると、伸縮アーム８ｇの先端がサセプタ４の載置面の上方に移動する。伸縮アーム８ｇの先端には、図２Ａに示した第２リフター８ｂ１と同様な支持部材８ｅが取り付けられている。   Such a second lifter 8b2 can be configured to include, for example, a shaft 8f that is vertically movable and a telescopic arm 8g that is attached to the tip portion of the shaft 8c and can expand and contract in the horizontal direction. When the extendable arm 8g extends, the tip of the extendable arm 8g moves above the mounting surface of the susceptor 4. A support member 8e similar to the second lifter 8b1 shown in FIG. 2A is attached to the tip of the telescopic arm 8g.

図２Ｃに示す第２リフター８ｂ３は、旋回動作と、伸縮動作との双方を行うものである。   The 2nd lifter 8b3 shown to FIG. 2C performs both turning operation | movement and expansion-contraction operation | movement.

このような第２リフター８ｂ３は、例えば、垂直方向に昇降可能で、水平方向に旋回可能なシャフト８ｃと、シャフト８ｃの先端部分に取り付けられ、水平方向に旋回可能な旋回アーム８ｄと、この旋回アーム８ｄ内に取り付けられ、水平方向に伸縮可能な伸縮アーム８ｇとを含んで構成することができる。   Such a second lifter 8b3 is, for example, a vertically movable shaft 8c that can be swung horizontally, a swivel arm 8d that is attached to the tip of the shaft 8c and that can swivel horizontally, and this swivel. A telescopic arm 8g which is attached in the arm 8d and can be expanded and contracted in the horizontal direction can be configured.

このような第２リフター８ｂ３の動作としては、まず、旋回アーム８ｄを旋回させ、旋回アーム８ｄの先端を、サセプタ４の載置面の上方に移動させる。この状態で、伸縮アーム８ｇを伸ばし、伸縮アーム８ｇの先端を、サセプタ４の載置面の中央部分に向かって、さらに伸ばす。このようにして、伸縮アーム８ｇの先端を、載置面の中央部分に向かってより深く移動させる。   As the operation of the second lifter 8 b 3, first, the turning arm 8 d is turned, and the tip of the turning arm 8 d is moved above the mounting surface of the susceptor 4. In this state, the extendable arm 8g is extended, and the tip of the extendable arm 8g is further extended toward the central portion of the mounting surface of the susceptor 4. In this way, the tip of the extendable arm 8g is moved deeper toward the center portion of the placement surface.

次に、第１の実施形態に係る基板載置機構の載置動作の一例を説明する。   Next, an example of the placement operation of the substrate placement mechanism according to the first embodiment will be described.

図３Ａ乃至図３Ｇは、基板Ｇをサセプタ４上に載置する動作例を示す図である。なお、本動作例においては、第２リフターとして、図２Ａに示した第２リフター８ｂ１を用いた場合を示すが、図２Ｂ、図２Ｃに示した第２リフター８ｂ２、８ｂ３を用いた場合にも、同様の動作で良い。   FIGS. 3A to 3G are diagrams showing an operation example of placing the substrate G on the susceptor 4. In this operation example, the case where the second lifter 8b1 shown in FIG. 2A is used as the second lifter is shown, but the case where the second lifters 8b2 and 8b3 shown in FIGS. 2B and 2C are used is also shown. The same operation is acceptable.

まず、図３Ａに示すように、搬送アームを用いて、基板Ｇの中央部を下方から支持した状態で、基板Ｇをチャンバー２の内部へ搬送する。   First, as shown in FIG. 3A, the substrate G is transported into the chamber 2 using the transport arm while the central portion of the substrate G is supported from below.

次に、図３Ｂに示すように、第２リフター８ｂ１のシャフト８ｃを、サセプタ４の載置面よりも上に上昇させた後、旋回アーム８ｄを載置面側に旋回させ、旋回アーム８ｄ先端の支持部材８ｅを基板Ｇの中央部下方に位置させる。   Next, as shown in FIG. 3B, after the shaft 8c of the second lifter 8b1 is raised above the placement surface of the susceptor 4, the turning arm 8d is turned to the placement surface side, and the tip of the turning arm 8d The support member 8e is positioned below the central portion of the substrate G.

次に、図３Ｃに示すように、シャフト８ｃを上昇させ、支持部材８ｅを基板Ｇの裏面に接触させる。引き続き、シャフト８ｃを上昇させ、基板Ｇを、搬送アーム４０から第２リフター８ｂ１に載せ替える。   Next, as shown in FIG. 3C, the shaft 8 c is raised and the support member 8 e is brought into contact with the back surface of the substrate G. Subsequently, the shaft 8c is raised, and the substrate G is transferred from the transfer arm 40 to the second lifter 8b1.

次に、図３Ｄに示すように、搬送アーム４０を、基板Ｇの下方から退避させる。次に。シャフト８ｃを下降させ、撓んでいる基板Ｇの中央部を、サセプタ４の載置面の上に接触させる。   Next, as shown in FIG. 3D, the transfer arm 40 is retracted from below the substrate G. next. The shaft 8 c is lowered, and the center portion of the bent substrate G is brought into contact with the mounting surface of the susceptor 4.

次に、図３Ｅに示すように、基板Ｇの中央部をサセプタ４の載置面の上に接触させた状態で、第１リフター８ａを上昇させ、基板Ｇの裏面の、上記支持部材８ｅで支持された部分よりも外周縁部を第１リフター８ａに接触させる。引き続き、第１リフター８ａを上昇させ、基板Ｇを支持部材８ｅから離脱させ、基板Ｇを第２リフター８ｂ１から第１リフター８ａに載せ替える。   Next, as shown in FIG. 3E, the first lifter 8a is lifted with the central portion of the substrate G in contact with the mounting surface of the susceptor 4, and the support member 8e on the back surface of the substrate G is lifted. An outer peripheral edge part is made to contact the 1st lifter 8a rather than the supported part. Subsequently, the first lifter 8a is raised, the substrate G is detached from the support member 8e, and the substrate G is transferred from the second lifter 8b1 to the first lifter 8a.

次に、図３Ｆに示すように、基板Ｇが支持部材８ｅから離脱された状態で旋回アーム８ｄをサセプタ４の載置面の外側に旋回させ、旋回アーム８ｄを載置面の上方から退避させ、シャフト８ｃを下降させる。   Next, as shown in FIG. 3F, with the substrate G detached from the support member 8e, the turning arm 8d is turned to the outside of the placement surface of the susceptor 4, and the turning arm 8d is retracted from above the placement surface. The shaft 8c is lowered.

次に、図３Ｇに示すように、第１リフター８ａを下降させ、基板Ｇをサセプタ４の載置面上に載置する。   Next, as shown in FIG. 3G, the first lifter 8 a is lowered and the substrate G is placed on the placement surface of the susceptor 4.

このようにして、搬送アーム４０によってチャンバー２に搬入されてきた基板Ｇが、サセプタ４の載置面上に載置される。   In this way, the substrate G carried into the chamber 2 by the transfer arm 40 is placed on the placement surface of the susceptor 4.

図４Ａ乃至図４Ｇは、基板Ｇをサセプタ４上から持ち上げる動作例を示す図である。基板Ｇをサセプタ４上から持ち上げる動作は、基本的にサセプタ４上に載置する動作と逆の手順で良い。   4A to 4G are diagrams illustrating an operation example of lifting the substrate G from the susceptor 4. The operation of lifting the substrate G from the susceptor 4 may basically be performed in the reverse order to the operation of placing the substrate G on the susceptor 4.

例えば、図４Ａに示すように、基板Ｇがサセプタ４上に載置されている状態から、図４Ｂに示すように、第１リフター８ａを上昇させ、基板Ｇの裏面中央部分がサセプタ４の載置面上に接触した状態のまま、基板Ｇの外周縁部を持ち上げる。   For example, as shown in FIG. 4A, from the state where the substrate G is placed on the susceptor 4, the first lifter 8 a is raised as shown in FIG. 4B, and the back surface central portion of the substrate G is placed on the susceptor 4. The outer peripheral edge of the substrate G is lifted while being in contact with the placement surface.

次に、図４Ｃに示すように、基板Ｇの外周縁部が、旋回アーム８ｄが基板Ｇの下方に旋回可能な状態まで持ち上がったら、旋回アーム８ｄをサセプタ４の載置面の上方に向かって旋回させ、支持部材８ｅを基板Ｇの下方に位置させる。   Next, as shown in FIG. 4C, when the outer peripheral edge of the substrate G is lifted up to a state in which the turning arm 8 d can turn below the substrate G, the turning arm 8 d is moved upward above the mounting surface of the susceptor 4. The support member 8e is positioned below the substrate G by turning.

次に、図４Ｄに示すように、第１リフター８ａを下降させ、基板Ｇの裏面を支持部材８ｅに当接させ、さらに第１リフター８ａを下降させて、第１リフター８ａを基板Ｇの裏面から離脱させる。このようにして、基板Ｇを第１リフター８ａから第２リフター８ｂ１に載せ替える。   Next, as shown in FIG. 4D, the first lifter 8a is lowered, the back surface of the substrate G is brought into contact with the support member 8e, the first lifter 8a is further lowered, and the first lifter 8a is moved to the back surface of the substrate G. To leave. In this way, the substrate G is transferred from the first lifter 8a to the second lifter 8b1.

次に、図４Ｅに示すように、シャフト８ｃを上昇させ、基板Ｇをサセプタ４の載置面上から離脱させる。基板Ｇが、基板Ｇの下方に搬送アーム４０が進入可能な状態まで持ち上がったら、搬送アーム４０を基板Ｇの下方に進入させる。   Next, as shown in FIG. 4E, the shaft 8 c is raised and the substrate G is detached from the mounting surface of the susceptor 4. When the substrate G is lifted to a state where the transfer arm 40 can enter under the substrate G, the transfer arm 40 is moved under the substrate G.

次に、図４Ｆに示すように、シャフト８ｃを下降させ、基板Ｇを搬送アーム４０に当接させ、さらにシャフト８ｃを下降させて、支持部材８ｅを基板Ｇの裏面から離脱させる。このようにして、基板Ｇを第２リフター８ｂ１から搬送アーム４０に載せ替える。   Next, as shown in FIG. 4F, the shaft 8 c is lowered, the substrate G is brought into contact with the transport arm 40, and the shaft 8 c is further lowered, so that the support member 8 e is detached from the back surface of the substrate G. In this way, the substrate G is transferred from the second lifter 8b1 to the transfer arm 40.

次に、図４Ｇに示すように、基板Ｇが支持部材８ｅから離脱された状態で旋回アーム８ｄをサセプタ４の載置面の外側に旋回させ、旋回アーム８ｄを載置面の上方から退避させる。次に、シャフト８ｃを下降させる。   Next, as shown in FIG. 4G, with the substrate G detached from the support member 8e, the turning arm 8d is turned to the outside of the placement surface of the susceptor 4, and the turning arm 8d is retracted from above the placement surface. . Next, the shaft 8c is lowered.

このようにして、チャンバー２の内部において処理、例えば、プラズマエッチングされた基板Ｇが、サセプタ４の載置面上から離脱され、搬送アーム４０によって、チャンバー２から搬送室、又はロードロック室に搬出される。   In this way, the substrate G that has been processed, for example, plasma-etched, inside the chamber 2 is detached from the mounting surface of the susceptor 4, and is transported from the chamber 2 to the transport chamber or the load lock chamber by the transport arm 40. Is done.

このような第１の実施形態に係る基板載置機構によれば、例えば、図５Ａに示す参考例のように、ピン状のリフター１００を用いて、基板Ｇの外周縁部１０１のみを支持するだけでは、基板Ｇが撓みすぎて確実に支持できないような薄い、又は巨大な基板Ｇであっても、図５Ｂに示すように、外周縁部１０１よりも、さらに基板Ｇの中央部分に近い部分１０２を第２リフター８ｂで支持することで、確実に支持することができる。   According to such a substrate mounting mechanism according to the first embodiment, for example, as in the reference example shown in FIG. 5A, only the outer peripheral edge 101 of the substrate G is supported using the pin-shaped lifter 100. As shown in FIG. 5B, a portion closer to the central portion of the substrate G than the outer peripheral edge portion 101, even if the substrate G is a thin or huge substrate G that cannot be reliably supported due to excessive bending. By supporting 102 with the second lifter 8b, it can be reliably supported.

しかも、第２リフター８ｂは、上述したようにサセプタ４の外側から、サセプタ４の載置面上に移動、例えば、水平移動してくるので、サセプタ４の中央部にピン状のリフターを設ける必要がなく、サセプタ４に特異点を形成することもない。従って、サセプタ４の中央部にピン状のリフターを設けているサセプタに比較して、基板Ｇに対する均一な処理を行うことができる。   Moreover, as described above, the second lifter 8b moves from the outside of the susceptor 4 onto the mounting surface of the susceptor 4, for example, moves horizontally, so that it is necessary to provide a pin-shaped lifter at the center of the susceptor 4. No singular point is formed on the susceptor 4. Therefore, compared with a susceptor in which a pin-like lifter is provided at the center of the susceptor 4, a uniform process can be performed on the substrate G.

さらに、第２リフター８ｂによれば、図６Ａに示すように、撓んだ基板Ｇの中央部分をサセプタ４の載置面上に当接させる。当接させた後に、図６Ｂに示すように、基板Ｇの外周縁部を、ピン状の第１リフター８ａを用いて持ち上げ、第２リフター８ｂの支持部材８ｅを、基板Ｇの裏面から離脱させる。   Furthermore, according to the second lifter 8b, as shown in FIG. 6A, the central portion of the bent substrate G is brought into contact with the mounting surface of the susceptor 4. After the contact, as shown in FIG. 6B, the outer peripheral edge of the substrate G is lifted using the pin-shaped first lifter 8a, and the support member 8e of the second lifter 8b is separated from the back surface of the substrate G. .

このように第２リフター８ｂの支持部材８ｅを、基板Ｇの裏面から離脱させることで、第２リフター８ｂをサセプタ４の載置面の上方から基板Ｇの裏面を傷つけることなく、退避させることができる。   Thus, by detaching the support member 8e of the second lifter 8b from the back surface of the substrate G, the second lifter 8b can be retracted from above the mounting surface of the susceptor 4 without damaging the back surface of the substrate G. it can.

しかも、基板Ｇの中央部分をサセプタ４の載置面上に当接させてあるから、第１リフター８ａが、たとえ、基板Ｇの外周縁部のみを支持していたとしても、基板Ｇが第１リフター８ａから脱落してしまうようなこともない。   Moreover, since the central portion of the substrate G is brought into contact with the mounting surface of the susceptor 4, even if the first lifter 8 a supports only the outer peripheral edge of the substrate G, the substrate G There is no possibility of dropping off from one lifter 8a.

このように、第１の実施形態に係る基板載置機構によれば、基板Ｇ、即ち、被処理基板を確実に支持でき、かつ、被処理基板に対する均一な処理も可能な基板載置機構と、この基板載置機構を備えた基板処理装置とを得ることができる。   Thus, according to the substrate mounting mechanism according to the first embodiment, the substrate mounting mechanism that can reliably support the substrate G, that is, the substrate to be processed, and can perform uniform processing on the substrate to be processed is also provided. A substrate processing apparatus provided with this substrate mounting mechanism can be obtained.

（第２の実施形態）
図７は、この発明の第２の実施形態に係る基板載置機構の一例を概略的に示す図である。 (Second Embodiment)
FIG. 7 is a view schematically showing an example of a substrate mounting mechanism according to the second embodiment of the present invention.

図７に示すように、第２の実施形態に係る基板載置機構は、第１リフター８ａの基板Ｇを支持する部分、及び第２リフター８ｂの基板Ｇを支持する部分それぞれに、重量センサー８１ａ、８１ｂを設けたものである。第２リフター８ｂの構成としては、例えば、図２Ａ乃至図２Ｃに示した構成を用いることができる。   As shown in FIG. 7, the substrate mounting mechanism according to the second embodiment includes weight sensors 81 a on the portion of the first lifter 8 a that supports the substrate G and the portion of the second lifter 8 b that supports the substrate G. , 81b. As the configuration of the second lifter 8b, for example, the configuration shown in FIGS. 2A to 2C can be used.

重量センサー８１ａ、８１ｂはそれぞれ、支持部に係る重量を測定するもので、得られた信号は、例えば、重量検出器８２に送られて、例えば、数値化される。測定された重量は、例えば、第１リフター８ａ、第２リフター８ｂの制御に利用することができる。   Each of the weight sensors 81a and 81b measures the weight of the support portion, and the obtained signal is sent to, for example, the weight detector 82 and digitized, for example. The measured weight can be used for controlling the first lifter 8a and the second lifter 8b, for example.

以下、測定された重量に基づいた、第１リフター８ａ、第２リフター８ｂの制御例を説明する。   Hereinafter, a control example of the first lifter 8a and the second lifter 8b based on the measured weight will be described.

図８は、重量センサー８１ａ、８１ｂにかかる重量の時間ごとの変化を示す図である。図８の縦軸は測定された重量であり、横軸は時間である。また、重量センサー８１ａにかかる重量は一点鎖線で、重量センサー８１ｂにかかる重量は実線で示す。   FIG. 8 is a diagram showing the change of the weight applied to the weight sensors 81a and 81b over time. The vertical axis in FIG. 8 is the measured weight, and the horizontal axis is time. The weight applied to the weight sensor 81a is indicated by a one-dot chain line, and the weight applied to the weight sensor 81b is indicated by a solid line.

また、図９Ａ乃至図９Ｅ、及び図１０Ａ乃至図１０Ｅはタイミング毎の基板Ｇの状態を示している。   9A to 9E and 10A to 10E show the state of the substrate G at each timing.

まず、図９Ａに示す状態は、基板Ｇが第２リフター８ｂで支持されている状態である。この状態においては、重量センサー８１ａには重量がかからないが、重量センサー８１ｂには基板Ｇの重量が全てかかっている。   First, the state shown in FIG. 9A is a state where the substrate G is supported by the second lifter 8b. In this state, the weight sensor 81a is not weighted, but the weight sensor 81b is fully loaded with the weight of the substrate G.

次に、図９Ｂに示すように、第２リフター８ｂのシャフト８ｃを下降させ、基板Ｇの裏面の中央部分をサセプタ４の載置面上に当接させる。この状態においては、基板Ｇの重量の一部をサセプタ４が負担するようになるため、重量センサー８１ｂにかかる重量は減少しだす（図８中時刻ｔ０）。   Next, as shown in FIG. 9B, the shaft 8 c of the second lifter 8 b is lowered, and the center portion of the back surface of the substrate G is brought into contact with the mounting surface of the susceptor 4. In this state, since the susceptor 4 comes to bear a part of the weight of the substrate G, the weight applied to the weight sensor 81b starts to decrease (time t0 in FIG. 8).

基板Ｇとサセプタ４との当接量が、所定の当接量に達したか否かは、重量センサー８１ｂにかかる重量が、所定の値まで減少したか否かで判断することができる。重量センサー８１ｂにかかる重量が、所定の値まで減少したら、基板Ｇの当接量が所定の当接量に達したと判断し、シャフト８ｃの下降を停止する（図８中の時刻ｔ１)。   Whether or not the contact amount between the substrate G and the susceptor 4 has reached a predetermined contact amount can be determined by whether or not the weight applied to the weight sensor 81b has decreased to a predetermined value. When the weight applied to the weight sensor 81b decreases to a predetermined value, it is determined that the contact amount of the substrate G has reached the predetermined contact amount, and the lowering of the shaft 8c is stopped (time t1 in FIG. 8).

次に、第１リフター８ａを上昇させる。第１リフター８ａが上昇し、図９Ｃに示すように、第１リフター８ａが基板Ｇの裏面に当接されると、基板Ｇの重量の一部を、さらに第１リフター８ａが負担するようになる。このため、重量センサー８１ａにかかる重量が増加しだし、反対に、重量センサー８１ｂにかかる重量が低下しだす（図８中の時刻ｔ２）。   Next, the first lifter 8a is raised. When the first lifter 8a rises and the first lifter 8a comes into contact with the back surface of the substrate G as shown in FIG. 9C, a part of the weight of the substrate G is further borne by the first lifter 8a. Become. For this reason, the weight applied to the weight sensor 81a starts increasing, and conversely, the weight applied to the weight sensor 81b starts decreasing (time t2 in FIG. 8).

重量センサー８１ｂにかかる重量がゼロになると、図９Ｄに示すように、基板Ｇの裏面が、第２リフター８ｂから完全に離脱した、と判断できる（図８中の時刻ｔ３）。

第２リフター８ｂが基板Ｇの裏面から完全に離脱した後、第２リフター８ｂを、サセプタ４の載置面の上方から退避させる。次に、第１リフター８ａを下降させる。第１リフター８ａが下降していくにつれて、基板Ｇの、サセプタ４の載置面上への当接量が増える。このため、重量センサー８１ａにかかる重量は減少しだす（図８中の時刻ｔ４）。 When the weight applied to the weight sensor 81b becomes zero, it can be determined that the back surface of the substrate G has completely detached from the second lifter 8b as shown in FIG. 9D (time t3 in FIG. 8).

After the second lifter 8b is completely detached from the back surface of the substrate G, the second lifter 8b is retracted from above the mounting surface of the susceptor 4. Next, the first lifter 8a is lowered. As the first lifter 8a is lowered, the contact amount of the substrate G on the mounting surface of the susceptor 4 increases. For this reason, the weight applied to the weight sensor 81a starts to decrease (time t4 in FIG. 8).

重量センサー８１ａにかかる重量がゼロになると、図９Ｅに示すように、基板Ｇが、サセプタ４の載置面上に完全に載置された、と判断できる（図８中の時刻ｔ５）。   When the weight applied to the weight sensor 81a becomes zero, it can be determined that the substrate G is completely placed on the placement surface of the susceptor 4 as shown in FIG. 9E (time t5 in FIG. 8).

このように、重量センサー８１ａ、８１ｂにかかる重量を測定し、把握することで、基板Ｇが、どのような状態にあるかを、例えば、基板Ｇの状態を目測したり、あるいは画像認識したりすることなく、知ることができる。重量センサー８１ａ、８１ｂにかかる重量の測定結果を、第１リフター８ａ、第２リフター８ｂの制御にフィードバックすることで、この発明に係る基板載置機構を、より高精度に制御することが可能となる。   In this way, by measuring and grasping the weight applied to the weight sensors 81a and 81b, the state of the substrate G can be measured, for example, by measuring the state of the substrate G or recognizing images. You can know without doing. By feeding back the measurement results of the weight applied to the weight sensors 81a and 81b to the control of the first lifter 8a and the second lifter 8b, the substrate mounting mechanism according to the present invention can be controlled with higher accuracy. Become.

例えば、基板Ｇの状態を目測したり、あるいは画像認識したりする場合には、基板Ｇと、第１リフター８ａ、あるいは第２リフター８ｂとのわずかな離脱量や、基板Ｇとサセプタ４の載置面とのわずかな当接量を精度良く知ることは難しい。   For example, when measuring the state of the substrate G or recognizing an image, a slight detachment amount between the substrate G and the first lifter 8a or the second lifter 8b, or mounting of the substrate G and the susceptor 4 is considered. It is difficult to accurately know the slight contact amount with the mounting surface.

これに対して、重量センサー８１ａ、８１ｂを用いれば、目測、あるいは画像認識に比較して、上記わずかな離脱量、あるいはわずかな当接量を、より精度良く知ることができる。従って、この発明に係る基板載置機構を、より高精度に制御できる。   On the other hand, if the weight sensors 81a and 81b are used, the slight separation amount or the slight contact amount can be known with higher accuracy than eye measurement or image recognition. Therefore, the substrate mounting mechanism according to the present invention can be controlled with higher accuracy.

また、重量センサー８１ａ、８１ｂは、基板Ｇをサセプタ４上に載置するときばかりでなく、サセプタ４上から持ち上げる場合にも利用できる。   Further, the weight sensors 81 a and 81 b can be used not only when the substrate G is placed on the susceptor 4 but also when the substrate G is lifted from the susceptor 4.

まず、図１０Ａに示す状態は、基板Ｇが完全にサセプタ４の載置面上に載置されている状態である。この状態においては、重量センサー８１ａ、８１ｂの双方とも重量がかからない。   First, the state shown in FIG. 10A is a state in which the substrate G is completely placed on the placement surface of the susceptor 4. In this state, the weight sensors 81a and 81b are not weighted.

次に、図１０Ｂに示すように、第１リフター８ａを上昇させる。第１リフター８ａが上昇し、第１リフター８ａが基板Ｇの裏面に当接しだすと、重量センサー８１ａにかかる重量が増加しだす（図８中の時刻ｔ６）
基板Ｇが持ち上がり、基板Ｇとサセプタ４との当接量が、所定の当接量に達したか否かは、重量センサー８１ａにかかる重量が、所定の値まで増加したが否かで判断することができる。重量センサー８１ａにかかる重量が、所定の値まで増加したら、基板Ｇの当接量が所定の当接量に達したと判断し、第１リフター８ａの上昇を停止する（図８中の時刻ｔ７)。 Next, as shown in FIG. 10B, the first lifter 8a is raised. When the first lifter 8a rises and the first lifter 8a starts to contact the back surface of the substrate G, the weight applied to the weight sensor 81a starts to increase (time t6 in FIG. 8).
Whether the substrate G is lifted and the contact amount between the substrate G and the susceptor 4 has reached a predetermined contact amount is determined by whether or not the weight applied to the weight sensor 81a has increased to a predetermined value. be able to. When the weight applied to the weight sensor 81a increases to a predetermined value, it is determined that the contact amount of the substrate G has reached the predetermined contact amount, and the ascent of the first lifter 8a is stopped (time t7 in FIG. 8). ).

次に、第２リフター８ｂのシャフト８ｃを上昇させ、図１０Ｂに示すように、第２リフター８ｂを、サセプタ４の載置面の上方に移動させる。   Next, the shaft 8c of the second lifter 8b is raised, and the second lifter 8b is moved above the mounting surface of the susceptor 4 as shown in FIG. 10B.

次に、第１リフター８ａを下降させる。第１リフター８ａが下降し、図１０Ｃに示すように、第２リフター８ｂが基板Ｇの裏面に当接されると、基板Ｇの重量の一部を、第２リフター８ｂが負担するようになる。このため、重量センサー８１ａにかかる重量が減少し、反対に、重量センサー８１ｂにかかる重量が増加しだす（図８中の時刻ｔ８）。   Next, the first lifter 8a is lowered. When the first lifter 8a is lowered and the second lifter 8b is brought into contact with the back surface of the substrate G as shown in FIG. 10C, the second lifter 8b bears a part of the weight of the substrate G. . For this reason, the weight applied to the weight sensor 81a decreases, and conversely, the weight applied to the weight sensor 81b starts to increase (time t8 in FIG. 8).

重量センサー８１ａにかかる重量がゼロになると、図１０Ｄに示すように、基板Ｇの裏面が、第１リフター８ａから完全に離脱した、と判断できる（図８中の時刻ｔ９）。   When the weight applied to the weight sensor 81a becomes zero, it can be determined that the back surface of the substrate G is completely detached from the first lifter 8a as shown in FIG. 10D (time t9 in FIG. 8).

次に、第２リフター８ｂのシャフト８ｃを上昇させる。基板Ｇが持ち上がり、基板Ｇとサセプタ４との当接量が減りだすと、重量センサー８１ｂにかかる重量が増加しだす（図８中の時刻ｔ１０）。   Next, the shaft 8c of the second lifter 8b is raised. When the substrate G is lifted and the contact amount between the substrate G and the susceptor 4 decreases, the weight applied to the weight sensor 81b increases (time t10 in FIG. 8).

重量センサー８１ｂにかかる重量が増加し、やがてかかる重量が安定すると、図１０Ｅに示すように、基板Ｇがサセプタ４の載置面上から完全に離脱した、と判断できる（図８中の時刻ｔ１１）。   When the weight applied to the weight sensor 81b is increased and the applied weight is eventually stabilized, it can be determined that the substrate G is completely detached from the mounting surface of the susceptor 4 as shown in FIG. 10E (time t11 in FIG. 8). ).

この後、基板Ｇの裏面とサセプタ４の載置面との間に、図１０Ｅでは図示を省略している搬送アーム４０を進入させ、基板Ｇを第２リフター８ｂから搬送アーム４０に載せ替えれば良い。   Thereafter, the transfer arm 40 (not shown in FIG. 10E) is inserted between the back surface of the substrate G and the mounting surface of the susceptor 4, and the substrate G is transferred from the second lifter 8b to the transfer arm 40. good.

尚、上記実施形態では、第１リフター８ａの基板Ｇを支持する部分、及び第２リフター８ｂの基板Ｇを支持する部分それぞれに、重量センサー８１ａ、８１ｂを設けたが、第１リフター８ａを支持する部分、及び第２リフター８ｂを支持する部分自体に重量センサーを設けても良い。   In the above-described embodiment, the weight sensors 81a and 81b are provided on the portion of the first lifter 8a that supports the substrate G and the portion of the second lifter 8b that supports the substrate G, respectively, but the first lifter 8a is supported. The weight sensor may be provided in the portion that supports the second lifter 8b.

（第３の実施形態）
図１１は、この発明の第３の実施形態に係る基板載置機構の一例を概略的に示す図である。 (Third embodiment)
FIG. 11 is a diagram schematically showing an example of a substrate mounting mechanism according to the third embodiment of the present invention.

図１１に示すように、第３の実施形態に係る基板載置機構は、第２リフター８ｂの旋回アーム８ｄを複数本設けた例である。   As shown in FIG. 11, the substrate mounting mechanism according to the third embodiment is an example in which a plurality of turning arms 8d of the second lifter 8b are provided.

このように、第２リフター８ｂの水平方向に移動する部分、例えば、旋回アーム８ｄ、あるいは図２Ｂに示した伸縮アーム８ｇは複数設けることが可能である。   As described above, a part of the second lifter 8b that moves in the horizontal direction, for example, the swing arm 8d or the extendable arm 8g shown in FIG. 2B can be provided in plural.

第２リフター８ｂの水平方向に移動する部分を複数設けた場合の動作例を説明する。   An example of operation when a plurality of portions that move in the horizontal direction of the second lifter 8b are provided will be described.

図１２Ａ乃至図１２Ｅは、基板Ｇをサセプタ４上から持ち上げる動作例を示す図である。   12A to 12E are diagrams illustrating an operation example of lifting the substrate G from the susceptor 4.

まず、図１２Ａは、基板Ｇがサセプタ４の載置面上に完全に載置されている状態を示している。   First, FIG. 12A shows a state in which the substrate G is completely placed on the placement surface of the susceptor 4.

次に、図１２Ｂに示すように、第１リフター８ａを上昇させ、基板Ｇの外周縁部を持ち上げる。次に、第２リフター８ｂのシャフト８ｃを上昇させ、さらに、第２リフター８ｂの第１旋回アーム８ｄ１を旋回させ、第１旋回アーム８ｄ１を基板Ｇの裏面下方に位置させる。   Next, as shown in FIG. 12B, the first lifter 8 a is raised and the outer peripheral edge of the substrate G is lifted. Next, the shaft 8c of the second lifter 8b is raised, the first turning arm 8d1 of the second lifter 8b is turned, and the first turning arm 8d1 is positioned below the back surface of the substrate G.

次に、図１２Ｃに示すように、第１リフター８ａを下降させ、基板Ｇを第１リフター８ａから第２リフター８ｂに載せ替える。   Next, as shown in FIG. 12C, the first lifter 8a is lowered, and the substrate G is transferred from the first lifter 8a to the second lifter 8b.

次に、図１２Ｄに示すように、第２リフター８ｂの第１旋回アーム８ｄ２を旋回させ、第２旋回アーム８ｄ２を基板Ｇの裏面下方に位置させる。このとき、第２旋回アーム８ｄ２の先端部分に設けられた支持部材８ｅは、第１旋回アーム８ｄ１の先端部分に設けられた支持部材８ｅよりも、さらに基板Ｇの中央部分を支持するようにする。   Next, as shown in FIG. 12D, the first turning arm 8d2 of the second lifter 8b is turned, and the second turning arm 8d2 is positioned below the back surface of the substrate G. At this time, the support member 8e provided at the tip portion of the second turning arm 8d2 supports the central portion of the substrate G further than the support member 8e provided at the tip portion of the first turning arm 8d1. .

次に、図１２Ｅに示すように、第２リフター８ｂのシャフト８ｃを上昇させ、基板Ｇをサセプタ４の載置面上から完全に離脱させる。   Next, as shown in FIG. 12E, the shaft 8 c of the second lifter 8 b is raised, and the substrate G is completely detached from the mounting surface of the susceptor 4.

このような第３の実施形態によれば、複数の旋回アーム、本例では２本の旋回アーム８ｄ１、８ｄ２を用いて、基板Ｇを、基板Ｇの外周縁部から少しずつ中央部分に向かって支持するようにすることができる。このため、基板Ｇが、より薄く、あるいはより巨大になり、より撓みやすくなった場合でも、基板Ｇの撓み量を抑制したまま、基板Ｇをサセプタ４上から持ち上げ、あるいは反対にサセプタ４上に載置することが可能となる。   According to the third embodiment as described above, the substrate G is gradually moved from the outer peripheral edge portion of the substrate G toward the central portion by using a plurality of swing arms, in this example, two swing arms 8d1 and 8d2. Can be supported. For this reason, even when the substrate G becomes thinner or larger and becomes easier to bend, the substrate G is lifted from the susceptor 4 while suppressing the amount of bending of the substrate G, or on the susceptor 4 on the contrary. It can be placed.

もちろん、第３の実施形態においても、サセプタ４の中央部にピン状のリフターを設ける必要がないので、サセプタ４に特異点を形成することもない。従って、第１の実施形態と同様に、基板Ｇに対する均一な処理を行うことができる。   Of course, also in the third embodiment, since it is not necessary to provide a pin-like lifter at the center of the susceptor 4, no singular point is formed on the susceptor 4. Accordingly, as in the first embodiment, uniform processing can be performed on the substrate G.

以上、この発明をいくつかの実施形態を参照して説明したが、この発明は、上記実施形態に限定されるものではなく、種々の変更が可能である。   As described above, the present invention has been described with reference to some embodiments. However, the present invention is not limited to the above-described embodiments, and various modifications can be made.

例えば、上記実施形態では、下部電極に高周波電力を印加するＲＩＥタイプの容量結合型平行平板プラズマエッチング装置に適用した例について説明したが、これに限らず、アッシング、ＣＶＤ成膜等の他のプラズマ処理装置に適用可能であり、基板を載置台に載置して処理する、プラズマ処理装置以外の基板処理装置全般にも適用可能である。   For example, in the above-described embodiment, an example in which the present invention is applied to an RIE type capacitively coupled parallel plate plasma etching apparatus that applies high-frequency power to the lower electrode has been described. However, the present invention is not limited thereto, and other plasmas such as ashing and CVD film formation are used. The present invention can be applied to a processing apparatus, and can also be applied to any substrate processing apparatus other than a plasma processing apparatus that mounts a substrate on a mounting table for processing.

さらに、上記実施形態ではＦＰＤ用のガラス基板に適用した例について説明したが、ＦＰＤ用のガラス基板以外の可撓性を有する基板全般に適用可能である。   Furthermore, although the said embodiment demonstrated the example applied to the glass substrate for FPD, it is applicable to the board | substrate with flexibility other than the glass substrate for FPD.

図１Ａはこの発明の第１の実施形態に係る基板載置機構を備えた基板処理装置を概略的に示す水平断面図、図１Ｂは図１Ａ中の１Ｂ−１Ｂ線に沿う断面図である。FIG. 1A is a horizontal sectional view schematically showing a substrate processing apparatus including a substrate mounting mechanism according to the first embodiment of the present invention, and FIG. 1B is a sectional view taken along line 1B-1B in FIG. 1A. 図２Ａ乃至図２Ｃは第２リフターの例を示す斜視図2A to 2C are perspective views showing examples of the second lifter. 図３Ａ乃至図３Ｇは基板をサセプタ上に載置する動作例を示す図3A to 3G are diagrams showing an example of an operation of placing a substrate on a susceptor. 図４Ａ乃至図４Ｇは基板をサセプタ上から持ち上げる動作例を示す図4A to 4G are views showing an operation example of lifting the substrate from the susceptor. 図５Ａは参考例を示す図、図５Ｂは実施形態を示す図FIG. 5A is a diagram showing a reference example, and FIG. 5B is a diagram showing an embodiment. 図６Ａ及び図６Ｂは実施形態を示す図6A and 6B show an embodiment. この発明の第２の実施形態に係る基板載置機構の一例を概略的に示す図The figure which shows schematically an example of the substrate mounting mechanism based on 2nd Embodiment of this invention 重量センサーにかかる重量の時間ごとの変化を示す図The figure which shows the change for every time of the weight concerning a weight sensor 図９Ａ乃至図９Ｅはタイミング毎の基板の状態を示す図9A to 9E are diagrams showing the state of the substrate at each timing. 図１０Ａ乃至図１０Ｅはタイミング毎の基板の状態を示す図10A to 10E are diagrams showing the state of the substrate at each timing. この発明の第３の実施形態に係る基板載置機構の一例を概略的に示す図The figure which shows roughly an example of the board | substrate mounting mechanism which concerns on 3rd Embodiment of this invention 図１２Ａ乃至図１２Ｅは基板をサセプタ上から持ち上げる動作例を示す図12A to 12E are diagrams showing an operation example of lifting the substrate from the susceptor.

符号の説明Explanation of symbols

２…チャンバー、４…サセプタ（載置台）、８ａ…第１リフター、８ｂ…第２リフター、８ｃ、８ｆ…シャフト、８ｄ…旋回アーム、８ｅ…支持部材、８ｇ…伸縮アーム、８１ａ、８１ｂ…重量センサー。
2 ... chamber, 4 ... susceptor (mounting table), 8a ... first lifter, 8b ... second lifter, 8c, 8f ... shaft, 8d ... swivel arm, 8e ... support member, 8g ... telescopic arm, 81a, 81b ... weight sensor.

Claims (12)

被処理基板を載置する載置台と、
前記載置台の内側に、突没自在に設けられ、前記被処理基板の外周縁部を支持する第１リフターと、
前記載置台の外側に、前記載置台の載置面の上方に移動可能に設けられ、前記第１リフターが前記被処理基板を支持する位置よりも前記被処理基板の中央部分を支持する第２リフターと、を具備し、
前記被処理基板の裏面を前記載置面上に部分的に当接させた状態において、前記第１リフターと前記第２リフター間にて前記被処理基板の受け渡しを行うように構成されていることを特徴とする基板載置機構。 A mounting table for mounting the substrate to be processed;
A first lifter which is provided on the inner side of the mounting table so as to project freely and supports an outer peripheral edge of the substrate to be processed;
A second support that is provided on the outside of the mounting table so as to be movable above the mounting surface of the mounting table, and that supports a central portion of the substrate to be processed rather than a position at which the first lifter supports the substrate to be processed; A lifter,
The substrate to be processed is transferred between the first lifter and the second lifter in a state where the back surface of the substrate to be processed is partially in contact with the placement surface. A substrate mounting mechanism. 前記第２リフターが、前記被処理基板を搬送してきた搬送機構から前記被処理基板を前記載置面の上方で受け取り、前記受け取った被処理基板の裏面を前記載置面上に部分的に当接させ、
前記被処理基板の裏面が前記載置面上に部分的に当接された状態で、前記第１リフターが前記被処理基板の外周縁部を持ち上げ、前記被処理基板を前記第２リフターから離脱させ、
前記被処理基板が前記第２リフターから離脱した状態で、前記第２リフターを前記載置面の上方から退避させ、
前記第２リフターが前記載置面の上方から退避された状態で、前記第１リフターが前記被処理基板を前記載置面上に載置するように構成されていることを特徴とする請求項１に記載の基板載置機構。 The second lifter receives the substrate to be processed from above the placement surface from a transport mechanism that transports the substrate to be processed, and partially applies the back surface of the received substrate to be treated to the placement surface. Contact
In a state where the back surface of the substrate to be processed is partially in contact with the mounting surface, the first lifter lifts the outer peripheral edge of the substrate to be processed and detaches the substrate to be processed from the second lifter. Let
With the substrate to be processed being detached from the second lifter, the second lifter is retracted from above the placement surface,
The first lifter is configured to place the substrate to be processed on the placement surface in a state where the second lifter is retracted from above the placement surface. 2. The substrate mounting mechanism according to 1. 前記被処理基板の裏面が前記載置面上に部分的に当接された状態で、前記第１リフターが前記被処理基板の外周縁部を持ち上げ、
前記被処理基板の裏面が前記載置面上に部分的に当接され、かつ、前記被処理基板の外周縁部が持ち上げられた状態で、前記第２リフターを前記載置面の上方に移動させ、
前記被処理基板の裏面が前記載置面上に部分的に当接された状態で、前記第１リフターが前記被処理基板を前記第２リフターに載せ替え、
前記第２リフターが、前記被処理基板を持ち上げ、前記被処理基板を前記載置面から離脱させるように構成されていることを特徴とする請求項２に記載の基板載置機構。 With the back surface of the substrate to be processed partially in contact with the mounting surface, the first lifter lifts the outer peripheral edge of the substrate to be processed,
The second lifter is moved above the mounting surface in a state where the back surface of the processing substrate is partially in contact with the mounting surface and the outer peripheral edge of the processing substrate is lifted. Let
In a state where the back surface of the substrate to be processed is partially in contact with the mounting surface, the first lifter replaces the substrate to be processed with the second lifter,
The substrate mounting mechanism according to claim 2, wherein the second lifter is configured to lift the substrate to be processed and to detach the substrate to be processed from the mounting surface. 前記第２リフターが、
垂直方向に移動可能、かつ、旋回可能なシャフトと、
前記シャフトの先端部分に取り付けられ、前記載置台の載置面の上方に旋回可能な旋回アームと、
を具備することを特徴とする請求項１乃至請求項３いずれか一項に記載の基板載置機構。 The second lifter is
A shaft that is vertically movable and pivotable;
A revolving arm attached to a tip portion of the shaft and capable of revolving above the placement surface of the mounting table;
The substrate mounting mechanism according to claim 1, wherein the substrate mounting mechanism is provided. 前記第２リフターが、
垂直方向に移動可能なシャフトと、
前記シャフトの先端部分に取り付けられ、前記載置台の載置面の上方に伸縮可能な伸縮アームと、
を具備することを特徴とする請求項１乃至請求項３いずれか一項に記載の基板載置機構。 The second lifter is
A vertically movable shaft;
A telescopic arm attached to the tip portion of the shaft and capable of expanding and contracting above the mounting surface of the mounting table,
The substrate mounting mechanism according to claim 1, wherein the substrate mounting mechanism is provided. 前記第２リフターが、
垂直方向に移動可能、かつ、旋回可能なシャフトと、
前記シャフトの先端部分に取り付けられ、前記載置台の載置面の上方に旋回可能な旋回アームと、
前記旋回アームに取り付けられ、前記載置台の載置面の上方に伸縮可能な伸縮アームと、
を具備することを特徴とする請求項１乃至請求項３いずれか一項に記載の基板載置機構。 The second lifter is
A shaft that is vertically movable and pivotable;
A revolving arm attached to a tip portion of the shaft and capable of revolving above the placement surface of the mounting table;
A telescopic arm attached to the swivel arm and capable of extending and contracting above the mounting surface of the mounting table,
The substrate mounting mechanism according to claim 1, wherein the substrate mounting mechanism is provided. 前記第１リフター、及び第２リフターに、重量センサーが、さらに設けられていることを特徴とする請求項１乃至請求項６いずれか一項に記載の基板載置機構。   The substrate mounting mechanism according to any one of claims 1 to 6, wherein a weight sensor is further provided in the first lifter and the second lifter. 前記第２リフターが、前記載置台の載置面の上方に移動可能な部材を、複数有することを特徴とする請求項１乃至請求項７いずれか一項に記載の基板載置機構。   The substrate mounting mechanism according to claim 1, wherein the second lifter includes a plurality of members that are movable above the mounting surface of the mounting table. 被処理基板に処理を施すチャンバーと、
前記チャンバーの内部に設けられ、前記被処理基板が載置される基板載置機構と、を備えた基板処理装置であって、
前記基板載置機構に、請求項１乃至請求項８いずれか一項に記載の基板載置機構が用いられていることを特徴とする基板処理装置。 A chamber for processing a substrate to be processed;
A substrate processing apparatus provided inside the chamber and provided with a substrate mounting mechanism on which the substrate to be processed is mounted,
A substrate processing apparatus, wherein the substrate mounting mechanism according to claim 1 is used for the substrate mounting mechanism. 被処理基板を載置する載置台と、
前記載置台の内側に、突没自在に設けられ、前記被処理基板の外周縁部を支持する第１リフターと、
前記載置台の外側に、前記載置台の載置面の上方に移動可能に設けられ、前記第１リフターが前記被処理基板を支持する位置よりも前記被処理基板の中央部分を支持する第２リフターと、を備えた基板載置機構の制御方法であって、
前記第２リフターが、前記被処理基板を搬送してきた搬送機構から前記被処理基板を前記載置面の上方で受け取り、前記受け取った被処理基板の裏面を前記載置面上に部分的に当接させる工程と、
前記被処理基板の裏面が前記載置面上に部分的に当接された状態で、前記第１リフターが前記被処理基板の外周縁部を持ち上げ、前記被処理基板を前記第２リフターから離脱させる工程と、
前記被処理基板が前記第２リフターから離脱した状態で、前記第２リフターを前記載置面の上方から退避させる工程と、
前記第２リフターが前記載置面の上方から退避された状態で、前記第１リフターが前記被処理基板を前記載置面上に載置する工程と、
を具備することを特徴とする基板載置機構の制御方法。 A mounting table for mounting the substrate to be processed;
A first lifter which is provided on the inner side of the mounting table so as to project freely and supports an outer peripheral edge of the substrate to be processed;
A second support that is provided on the outside of the mounting table so as to be movable above the mounting surface of the mounting table, and that supports a central portion of the substrate to be processed rather than a position at which the first lifter supports the substrate to be processed; A method of controlling a substrate mounting mechanism comprising a lifter,
The second lifter receives the substrate to be processed from above the placement surface from a transport mechanism that transports the substrate to be processed, and partially applies the back surface of the received substrate to be treated to the placement surface. A contact process;
In a state where the back surface of the substrate to be processed is partially in contact with the mounting surface, the first lifter lifts the outer peripheral edge of the substrate to be processed and detaches the substrate to be processed from the second lifter. A process of
Retreating the second lifter from above the mounting surface in a state where the substrate to be processed is detached from the second lifter;
The first lifter placing the substrate to be processed on the placement surface in a state where the second lifter is retracted from above the placement surface;
A method for controlling a substrate mounting mechanism, comprising: 前記被処理基板の裏面が前記載置面上に部分的に当接された状態で、前記第１リフターが前記被処理基板の外周縁部を持ち上げる工程と、
前記被処理基板の裏面が前記載置面上に部分的に当接され、かつ、前記被処理基板の外周縁部が持ち上げられた状態で、前記第２リフターを前記載置面の上方に移動させる工程と、
前記被処理基板の裏面が前記載置面上に部分的に当接された状態で、前記第１リフターが前記被処理基板を前記第２リフターに載せ替える工程と、
前記第２リフターが、前記被処理基板を持ち上げ、前記被処理基板を前記載置面から離脱させる工程と、
をさらに具備することを特徴とする請求項１０に記載の基板載置機構の制御方法。 The first lifter lifting the outer peripheral edge of the substrate to be processed in a state where the back surface of the substrate to be processed is partially in contact with the mounting surface;
The second lifter is moved above the mounting surface in a state where the back surface of the processing substrate is partially in contact with the mounting surface and the outer peripheral edge of the processing substrate is lifted. A process of
A step in which the first lifter replaces the substrate to be treated with the second lifter in a state where the back surface of the substrate to be treated is partially in contact with the placement surface;
The second lifter lifts up the substrate to be processed and causes the substrate to be removed from the mounting surface;
The method for controlling a substrate mounting mechanism according to claim 10, further comprising: コンピュータ上で動作し、基板載置機構を制御するプログラムが記憶されたコンピュータ読み取り可能な記憶媒体であって、
前記プログラムは、実行時に、前記請求項１０又は請求項１１いずれか一項に記載の基板載置機構の制御方法が行われるように、コンピュータに前記基板載置機構を制御させることを特徴とするコンピュータ読み取り可能な記憶媒体。 A computer-readable storage medium that operates on a computer and stores a program for controlling the substrate mounting mechanism,
The program causes a computer to control the substrate mounting mechanism so that the method for controlling the substrate mounting mechanism according to any one of claims 10 and 11 is performed at the time of execution. A computer-readable storage medium.
JP2008228751A 2008-09-05 2008-09-05 Substrate placing mechanism, substrate processing apparatus, substrate placing mechanism control method, and storage medium Expired - Fee Related JP5261085B2 (en)

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TW098129876A TWI512881B (en) 2008-09-05 2009-09-04 Substrate placement mechanism, substrate processing device, control method of substrate placement mechanism, and memory medium
CN200910171076XA CN101667520B (en) 2008-09-05 2009-09-04 Method for controlling base plate carrying mechanism, base plate treating device and base plate carrying mechanism
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JP2010062461A (en) 2010-03-18
TWI512881B (en) 2015-12-11

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