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JP5105073B2 - 感放射線性樹脂組成物、ならびに層間絶縁膜およびマイクロレンズの製造方法 - Google Patents

感放射線性樹脂組成物、ならびに層間絶縁膜およびマイクロレンズの製造方法 Download PDF

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Publication number
JP5105073B2
JP5105073B2 JP2008076158A JP2008076158A JP5105073B2 JP 5105073 B2 JP5105073 B2 JP 5105073B2 JP 2008076158 A JP2008076158 A JP 2008076158A JP 2008076158 A JP2008076158 A JP 2008076158A JP 5105073 B2 JP5105073 B2 JP 5105073B2
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group
radiation
weight
resin composition
coating film
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JP2008076158A
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Japanese (ja)
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JP2009229892A (ja
Inventor
友希 大沼
政暁 花村
謙一 濱田
孝浩 飯島
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JSR Corp
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JSR Corp
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Priority to JP2008076158A priority Critical patent/JP5105073B2/ja
Priority to CN2009101270632A priority patent/CN101546127B/zh
Priority to TW098109358A priority patent/TWI430025B/zh
Priority to KR1020090024420A priority patent/KR101525254B1/ko
Publication of JP2009229892A publication Critical patent/JP2009229892A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
    • C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2008076158A 2008-03-24 2008-03-24 感放射線性樹脂組成物、ならびに層間絶縁膜およびマイクロレンズの製造方法 Active JP5105073B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008076158A JP5105073B2 (ja) 2008-03-24 2008-03-24 感放射線性樹脂組成物、ならびに層間絶縁膜およびマイクロレンズの製造方法
CN2009101270632A CN101546127B (zh) 2008-03-24 2009-03-23 感射线性树脂组合物以及层间绝缘膜和微透镜的制造方法
TW098109358A TWI430025B (zh) 2008-03-24 2009-03-23 感放射線性樹脂組成物、與層間絕緣膜及微透鏡之製法
KR1020090024420A KR101525254B1 (ko) 2008-03-24 2009-03-23 감방사선성 수지 조성물, 및 층간 절연막 및 마이크로렌즈의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008076158A JP5105073B2 (ja) 2008-03-24 2008-03-24 感放射線性樹脂組成物、ならびに層間絶縁膜およびマイクロレンズの製造方法

Publications (2)

Publication Number Publication Date
JP2009229892A JP2009229892A (ja) 2009-10-08
JP5105073B2 true JP5105073B2 (ja) 2012-12-19

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JP2008076158A Active JP5105073B2 (ja) 2008-03-24 2008-03-24 感放射線性樹脂組成物、ならびに層間絶縁膜およびマイクロレンズの製造方法

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JP (1) JP5105073B2 (ko)
KR (1) KR101525254B1 (ko)
CN (1) CN101546127B (ko)
TW (1) TWI430025B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011136073A1 (ja) * 2010-04-28 2011-11-03 Jsr株式会社 ポジ型感放射線性組成物、表示素子用層間絶縁膜及びその形成方法
CN102934028B (zh) * 2010-05-13 2016-06-29 日产化学工业株式会社 感光性树脂组合物及显示器装置
JP5655529B2 (ja) * 2010-12-01 2015-01-21 Jsr株式会社 感放射線性樹脂組成物、層間絶縁膜及び層間絶縁膜の形成方法
JP6186766B2 (ja) * 2012-03-30 2017-08-30 東レ株式会社 感光性シロキサン組成物、それから形成された硬化膜、およびその硬化膜を有する素子
US9341946B2 (en) * 2012-05-25 2016-05-17 Lg Chem, Ltd. Photosensitive resin composition, pattern formed using same and display panel comprising same
TWI524150B (zh) 2014-06-27 2016-03-01 奇美實業股份有限公司 感光性樹脂組成物、保護膜及具有保護膜之元件
TWI524141B (zh) 2014-06-27 2016-03-01 奇美實業股份有限公司 感光性樹脂組成物、保護膜及具有保護膜之元件
CN112368336A (zh) * 2018-08-31 2021-02-12 东丽株式会社 树脂组合物、其固化膜
JP7491933B2 (ja) * 2018-12-31 2024-05-28 ドンジン セミケム カンパニー リミテッド ポジ型感光性樹脂組成物
KR20240037946A (ko) * 2021-07-28 2024-03-22 닛산 가가쿠 가부시키가이샤 특정 공중합체를 포함하는 포지티브형 감광성 수지 조성물

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3835120B2 (ja) * 2000-05-22 2006-10-18 Ｊｓｒ株式会社 感放射線性樹脂組成物並びに層間絶縁膜およびマイクロレンズ
EP1331518A3 (en) * 2002-01-24 2004-04-07 JSR Corporation Radiation sensitive composition for forming an insulating film, insulating film and display device
US6984476B2 (en) * 2002-04-15 2006-01-10 Sharp Kabushiki Kaisha Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device
JP4677871B2 (ja) * 2005-10-03 2011-04-27 Ｊｓｒ株式会社 感放射線性樹脂組成物ならびに層間絶縁膜およびマイクロレンズの形成
KR101280478B1 (ko) * 2005-10-26 2013-07-15 주식회사 동진쎄미켐 감광성 수지 조성물
JP4655914B2 (ja) * 2005-12-13 2011-03-23 東レ株式会社 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子
KR20090010044A (ko) * 2006-05-16 2009-01-28 닛산 가가쿠 고교 가부시키 가이샤 포지티브형 감광성 수지 조성물 및 이로부터 얻어지는 다공질막

Also Published As

Publication number Publication date
CN101546127B (zh) 2012-11-28
TWI430025B (zh) 2014-03-11
KR101525254B1 (ko) 2015-06-02
TW200949441A (en) 2009-12-01
KR20090101847A (ko) 2009-09-29
CN101546127A (zh) 2009-09-30
JP2009229892A (ja) 2009-10-08

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