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JP5102497B2 - Method for manufacturing metal-ceramic bonded circuit board - Google Patents

Method for manufacturing metal-ceramic bonded circuit board Download PDF

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JP5102497B2
JP5102497B2 JP2007009783A JP2007009783A JP5102497B2 JP 5102497 B2 JP5102497 B2 JP 5102497B2 JP 2007009783 A JP2007009783 A JP 2007009783A JP 2007009783 A JP2007009783 A JP 2007009783A JP 5102497 B2 JP5102497 B2 JP 5102497B2
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aluminum
circuit board
laser
solder
plating layer
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JP2008177383A (en
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貴幸 高橋
睦 浪岡
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Dowa Metaltech Co Ltd
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Description

本発明は金属セラミックス接合回路基板およびその製造方法、特に、アルミニウムセラミックス接合基板に搭載される半導体素子やチップ部品の半田付けに際し、半導体素子やチップ部品が所定の場所から位置ズレするのを防止できる金属セラミックス接合回路基板及びその製造方法に関する。   INDUSTRIAL APPLICABILITY The present invention can prevent a metal element / chip component from being displaced from a predetermined position when soldering a semiconductor element / chip component mounted on the aluminum / ceramic bonding substrate, in particular, a method for manufacturing the same. The present invention relates to a metal ceramics bonded circuit board and a manufacturing method thereof.

特許文献1には、所定の回路パターンを有する導電層を備えた回路基板と、この回路基板に半田により接合された放熱板と、この放熱板に半田で接合された半導体素子と、これら各部を電気的に接続するボンディングワイヤとを備えている半導体装置が開示されている。そして半導体素子が固着されるこの放熱板の主面は、半田付け可能な領域と、半田をはじく金属領域とを有し、放熱板のチップが搭載されていない領域が半田をはじく領域とし、この結果、マウント半田流れが防止され、バラツキがなくなり半田厚が均一になり、TFTレベルが向上することが開示されている。   In Patent Document 1, a circuit board provided with a conductive layer having a predetermined circuit pattern, a heat sink joined to the circuit board by solder, a semiconductor element joined to the heat sink by solder, and each of these parts A semiconductor device including a bonding wire that is electrically connected is disclosed. The main surface of the heat sink to which the semiconductor element is fixed has a solderable region and a metal region that repels solder, and a region where the chip of the heat sink is not mounted is a region that repels solder. As a result, it is disclosed that the flow of the mount solder is prevented, there is no variation, the solder thickness becomes uniform, and the TFT level is improved.

特許文献2には、回路基板の表面に導体薄膜が形成されており、かつ導体薄膜が、素子搭載領域の周囲において接合材を接合目的で溶融させたときにその溶融物の過剰分が流入し貯留可能な仕切り溝を有することが開示されている。
特開平8−148647号 特開2004−39988号
In Patent Document 2, a conductive thin film is formed on the surface of a circuit board, and when the conductive thin film melts a bonding material around the element mounting region for the purpose of bonding, an excess of the melt flows. It is disclosed to have a partition groove that can be stored.
JP-A-8-148647 JP 2004-39988 A

特許文献1に記載の半田をはじく金属領域あるいは半田付可能な金属領域の作製は、例えばそれらの金属を貼り付けたり、或いはマスキングをしてエッチング法などで形成する必要がある。また、特許文献2ではレーザーにより導体を除去しセラミックス基板を露出させる加工を行うため、導体の厚さが薄くないとあるいはセラミックス基板を露出させないと効果を得られなかった。   The production of a metal region that repels solder or a metal region that can be soldered described in Patent Document 1 needs to be formed by, for example, etching or attaching such metal or masking. Moreover, in patent document 2, since the process which removes a conductor with a laser and exposes a ceramic substrate is performed, the effect cannot be obtained unless the thickness of the conductor is thin or the ceramic substrate is exposed.

本発明の目的は、例えばパワー半導体を搭載する、比較的厚い回路用金属板が接合された金属セラミックス接合回路基板において、半導体やチップ部品を半田で搭載する際の半田流れを防止し、半導体やチップ部品の位置ズレを防止する金属セラミックス接合回路基板を短時間に簡単に作製できる方法を提供することにある。   An object of the present invention is to prevent a solder flow when a semiconductor or a chip component is mounted with solder in a metal-ceramic bonded circuit board on which a relatively thick circuit metal plate is bonded, for example, on which a power semiconductor is mounted. An object of the present invention is to provide a method capable of easily producing a metal-ceramic bonded circuit board for preventing displacement of chip parts in a short time.

本発明の金属セラミックス接合回路基板の製造方法は、ろう接法、直接接合法、及び溶湯接合法の何れかによりセラミックス基板とアルミニウム板を接合、接合されたアルミニウム板を加工することにより、セラミックス基板にアルミニウム回路板を形成した後、該アルミニウム回路板の表面に半田付け可能なニッケルめっき層、ニッケル合金めっき層、及び銅めっき層の1つ電気めっきまたは無電解めっきにより形成し、該めっき層の、半導体素子またはチップ部品を半田付けする部分の周囲めっき層が除去され該アルミニウム回路板が露出する条件で、レーザーを照射し、半田の濡れない部分を形成することを特徴とする。 The method for manufacturing a metal ceramic bonded circuit board according to the present invention includes bonding a ceramic substrate and an aluminum plate by any one of a brazing method, a direct bonding method, and a molten metal bonding method, and processing the bonded aluminum plate. After forming an aluminum circuit board on the substrate, one of a nickel plating layer , a nickel alloy plating layer, and a copper plating layer that can be soldered to the surface of the aluminum circuit board is formed by electroplating or electroless plating. A portion where the plating layer is removed around the portion of the layer where the semiconductor element or the chip component is soldered and the aluminum circuit board is exposed is irradiated with a laser to form a portion where the solder is not wetted.

前記レーザー照射が、YAG、YVO 4 、CO 2 のいずれかを用いたレーザーマーカー用のレーザー照射装置によるものであることを特徴とする。 Irradiation of the laser, YAG, characterized der Rukoto by laser irradiation apparatus for laser marker using either YVO 4, CO 2.

前記アルミニウム回路板が、厚さ0.1〜1.0mmのアルミニウムやアルミニウム合金であることを特徴とする。 The aluminum circuit board, wherein the aluminum or aluminum alloy der Rukoto thickness 0.1 to 1.0 mm.

本発明によれば、例えばパワー半導体を搭載する、比較的厚い回路用金属板が接合されたアルミニウムセラミックス接合回路基板において、半導体やチップ部品を半田で搭載する際の半田流れを防止し、半導体やチップ部品の位置ズレを防止する金属セラミックス接合回路基板及びこれを短時間に簡単に作製できる方法を提供することができる。   According to the present invention, for example, in an aluminum ceramic bonded circuit board on which a power semiconductor is mounted and a relatively thick circuit metal plate is bonded, solder flow when mounting a semiconductor or a chip component with solder is prevented. It is possible to provide a metal-ceramic bonding circuit board for preventing displacement of chip components and a method for easily producing the same in a short time.

また、本発明においては、半田の濡れない部分を作製するためには、レーザーを照射するだけで良い。即ち、半田の濡れない金属や樹脂(半田レジスト等)を貼り付けて形成したり、マスキングしてエッチングしたりする必要がないのでコストダウンがはかれる。さらにレーザーで加工するため微細な部分のみ半田の濡れない部分を形成できるので、回路基板を小型化することも可能となる。また、その材質から高温半田やPbレス半田等、比較的高い半田付けの温度条件でも使用できる。   Further, in the present invention, in order to produce a portion where the solder does not get wet, it is only necessary to irradiate a laser. That is, it is not necessary to form a metal or resin (solder resist or the like) that does not wet solder, or to perform masking and etching, thereby reducing the cost. Further, since processing is performed with a laser, only a fine portion can be formed where the solder is not wetted, so that the circuit board can be reduced in size. Moreover, it can be used even under relatively high soldering temperature conditions such as high-temperature solder and Pb-less solder.

さらに、レーザ照射により加工するのは、アルミニウム回路板の表面の一部だけなので、1つの回路板(アイランド)に2箇所以上の半田付けされない部分を形成することができる。すなわち例えば半導体チップを1つのアイランドに複数搭載することができ回路設計において自由度が高いという特徴をもたせることができる。   Furthermore, since only part of the surface of the aluminum circuit board is processed by laser irradiation, two or more unsoldered parts can be formed on one circuit board (island). That is, for example, a plurality of semiconductor chips can be mounted on one island, and the circuit design can have a high degree of freedom.

以下図面によって本発明を説明する。   The present invention will be described below with reference to the drawings.

本発明の一例としてのアルミニウムセラミックス接合回路基板は、セラミックス基板1にろう材2を介して回路用金属板としてアルミニウム回路板3を加熱、接合し、その後、必要に応じて、回路パターン形成のためのマスキング、露光、エッチング、マスキング部材の剥離を行い、回路パターンを形成した。このアルミニウム回路板3の表面に半田付け可能なめっき層4を施す。半田付け性の良好なめっき層4としては、ニッケルめっき層あるいはニッケル合金めっき層、銅、金、銀、錫めっき層が好ましい。これらのめっき層は電気めっきやまたは無電解めっきにより、形成することができる。   An aluminum ceramic bonded circuit board as an example of the present invention heats and bonds an aluminum circuit board 3 as a circuit metal plate to a ceramic board 1 via a brazing material 2 and then forms a circuit pattern as necessary. Masking, exposure, etching, and peeling of the masking member were performed to form a circuit pattern. A solderable plating layer 4 is applied to the surface of the aluminum circuit board 3. As the plating layer 4 having good solderability, a nickel plating layer, a nickel alloy plating layer, copper, gold, silver, or a tin plating layer is preferable. These plating layers can be formed by electroplating or electroless plating.

その後、半導体素子またはチップ部分(コンデンサや抵抗等)を搭載する部分5のめっき層周囲にレーザーを照射し、半田の濡れない部分6を形成する。レーザー照射された部分はレーザー照射によって、アルミニウム表面が露出するため、またはアルミニウムが露出し、その表面が酸化して半田濡れ性が悪くなる、あるいはアルミニウム表面が露出しないまでも、めっき層4の組織の変化や酸化等により半田濡れ性が悪くなると考えられる。また、半田の濡れない部分は図示されるように1つのアルミニウム板3(アイランド)に2箇所以上形成しても良い。   Thereafter, a laser is irradiated around the plating layer of the portion 5 on which the semiconductor element or chip portion (capacitor, resistor, etc.) is mounted to form a portion 6 where the solder does not get wet. Since the aluminum surface is exposed to the laser irradiated portion by the laser irradiation, or the aluminum is exposed and the surface is oxidized to deteriorate the solder wettability or the aluminum surface is not exposed, the structure of the plating layer 4 It is considered that the solder wettability is deteriorated due to the change of the solder or oxidation. Further, as shown in the figure, two or more portions where solder does not wet may be formed on one aluminum plate 3 (island).

前記セラミックス基板1とアルミニウム回路板3の接合は、ろう接法以外にも、直接接合法、接着剤を介した接合法、及び溶湯接合法の何れかとなし得る。また、両面にアルミニウム回路板を接合しても良く、アルミニウム回路板を接合した反対の面に放熱板を接合しても良い。   The bonding of the ceramic substrate 1 and the aluminum circuit board 3 can be any of a direct bonding method, a bonding method using an adhesive, and a molten metal bonding method, in addition to the brazing method. Moreover, an aluminum circuit board may be joined to both surfaces, and a heat sink may be joined to the opposite surface where the aluminum circuit board is joined.

また、前記半田の濡れない部分は、レーザー照射によりめっき表面を加工して形成するために、アルミニウム回路板3上のめっき層4より、低い位置に形成される。   Further, the portion where the solder does not get wet is formed at a position lower than the plated layer 4 on the aluminum circuit board 3 in order to form the plated surface by laser irradiation.

前記セラミックス基板1としてはパワーモジュール用アルミニウムセラミックス基板に使用されている、アルミナ、窒化アルミニウム、窒化珪素を主とする組成のセラミックス基板が代表的であり、これらを使用することが好ましい。   The ceramic substrate 1 is typically a ceramic substrate having a composition mainly composed of alumina, aluminum nitride, and silicon nitride, which is used for an aluminum ceramic substrate for a power module, and these are preferably used.

前記ろう材2は、アルミニウム製の回路基板を接合するために、Al系ろう材、例えばAl−Si系ろう材を用いることが好ましい。   The brazing material 2 is preferably an Al-based brazing material, for example, an Al—Si based brazing material, for joining aluminum circuit boards.

また、前記アルミニウム回路板3としては、99.5%以上の純度のアルミニウムやアルミニウム合金(Al−Si系合金等)の使用が好ましい。また厚さは0.1〜1.0mm、さらには0.15〜0.6mm更に好ましくは0.25〜0.5mm程度が好ましい。パワー半導体を搭載する等の場合、電気抵抗等より、ある程度厚いものが要求されるからである。   The aluminum circuit board 3 is preferably made of aluminum or aluminum alloy (Al-Si alloy or the like) having a purity of 99.5% or more. The thickness is preferably 0.1 to 1.0 mm, more preferably 0.15 to 0.6 mm, and still more preferably about 0.25 to 0.5 mm. This is because, in the case of mounting a power semiconductor or the like, a thickness that is somewhat thicker than electric resistance or the like is required.

レーザ照射する装置としては、YAGやYVO4 、Co2 を用いたレーザーがあるがどの装置を用いても良い。例えば、レーザーマーカー用であれば、プログラムにより、所定の形状に沿って細いパターンにレーザを照射することが容易であるので好ましい。また、同時に製品名等のマーキングも可能であり、また、装置にワークをのせればあとは、プログラムで自動的に加工されるので、簡単で短時間(数〜数10秒/枚)で加工できる。レーザー加工はめっき層が除去されアルミニウム表面が露出する程度(めっき表面からの深さで0.5〜20μm程度)が好ましい。 As a laser irradiation apparatus, there is a laser using YAG, YVO 4 , or Co 2 , but any apparatus may be used. For example, it is preferable for a laser marker because it is easy to irradiate a laser on a thin pattern along a predetermined shape by a program. At the same time, it is possible to mark the product name, etc. Also, if a workpiece is placed on the device, it is automatically processed by a program, so it can be processed easily and in a short time (several to several tens of seconds / sheet). it can. Laser processing is preferably performed so that the plating layer is removed and the aluminum surface is exposed (about 0.5 to 20 μm in depth from the plating surface).

前記めっきの厚さは0.5〜10μm程度が好ましい。薄すぎると半田付け性が悪く、厚すぎるとレーザー照射時間を長くして加工しなければならないので、前記範囲が好ましい。さらに好ましくは、1〜6μmである。   The thickness of the plating is preferably about 0.5 to 10 μm. If the thickness is too thin, the solderability is poor. If the thickness is too thick, the laser irradiation time must be increased for processing. More preferably, it is 1-6 micrometers.

セラミックス基板として縦50mm×幅50mm、厚さ0.6mmの窒化アルミニウム基板を準備し、溶湯接合法によって、厚さ0.5mmの99.9%アルミニウム板を窒化アルミニウム基板の両面のほぼ全面に形成した。その次に、回路パターン形状に形成されたエッチングレジストをアルミニウム板の表面に塗布し、UV硬化してマスキングした。その後、塩化鉄溶液により不要なアルミニウム板を除去し、アルミニウム回路板を得た。   An aluminum nitride substrate having a length of 50 mm, a width of 50 mm, and a thickness of 0.6 mm is prepared as a ceramic substrate, and a 99.9% aluminum plate having a thickness of 0.5 mm is formed on almost both surfaces of the aluminum nitride substrate by a molten metal bonding method. did. Next, an etching resist formed in a circuit pattern shape was applied to the surface of the aluminum plate, and UV cured and masked. Thereafter, an unnecessary aluminum plate was removed with an iron chloride solution to obtain an aluminum circuit board.

この後に、無電解めっきにより、アルミニウム回路板の表面の全面にニッケル−リンめっき層を3μm施した。   Thereafter, a nickel-phosphorous plating layer was applied to 3 μm over the entire surface of the aluminum circuit board by electroless plating.

次に、一辺10mmの正方形の半導体チップを搭載する部分を想定し、その周囲にYVO4レーザー装置(KEYENCE製)でレーザーを幅0.5mmにわたって照射するようにプログラムした。その後、レーザー照射加工を実施した結果、照射部に変色が見られた。また、レーザー加工した部分はめっき層表面より低い位置であった。   Next, assuming a portion on which a square semiconductor chip having a side of 10 mm was mounted, the periphery was programmed to irradiate a laser beam with a width of 0.5 mm with a YVO4 laser device (manufactured by KEYENCE). After that, as a result of laser irradiation processing, discoloration was observed in the irradiated part. Moreover, the laser-processed part was a position lower than the plating layer surface.

次に、レーザー加工後のアルミニウムセラミックス接合回路基板を、共晶半田が溶けた半田槽(230℃)に30秒間ディップしたところ、レーザー加工部のみ半田が濡れなかった。   Next, when the aluminum ceramic bonded circuit board after laser processing was dipped in a solder bath (230 ° C.) in which eutectic solder was melted for 30 seconds, only the laser processed portion did not get wet.

前記めっきがニッケルの電気めっきであること以外は、実施例1記載の方法でサンプルを作製し、同様の評価を行ったところ、実施例1と同様にレーザー加工部のみ半田が濡れなかった。   A sample was prepared by the method described in Example 1 except that the plating was nickel electroplating, and the same evaluation was performed. As in Example 1, the solder was not wetted only in the laser processed part.

アルミニウム板と窒化アルミニウム基板の接合をAl−Si系ろう材を介して接合した以外は、実施例1記載の方法でサンプルを作製し、同様の評価を行ったところ、実施例1と同様にレーザー加工部のみ半田が濡れなかった。   A sample was prepared by the method described in Example 1 except that the aluminum plate and the aluminum nitride substrate were bonded via an Al—Si brazing material, and the same evaluation was performed. Solder did not get wet only in the processed part.

前記めっきがニッケルの電気めっきであること以外は、実施例3記載の方法でサンプルを作製し、同様の評価を行ったところ、実施例1と同様にレーザー加工部のみ半田が濡れなかった。   A sample was prepared by the method described in Example 3 except that the plating was nickel electroplating, and the same evaluation was performed. As in Example 1, the solder did not get wet only in the laser processed part.

実施例1〜4のサンプルの半導体搭載部分に、一辺を10mmとする厚さ0.1mmの共晶半田箔を乗せ、その上に10mm角の半導体チップ(半田付面はメタライズされている)を載せ、250℃まで加熱したあとに冷却、接合した。このとき、レーザー加工部を超えて半田が流れ出すことがなく、所定の位置に半導体チップが半田付けされ、位置ズレもなかった。   A eutectic solder foil having a thickness of 0.1 mm with a side of 10 mm is placed on the semiconductor mounting portion of the samples of Examples 1 to 4, and a 10 mm square semiconductor chip (soldered surface is metallized) thereon. After being mounted and heated to 250 ° C., it was cooled and joined. At this time, the solder did not flow out beyond the laser processing portion, the semiconductor chip was soldered at a predetermined position, and there was no positional deviation.

(比較例1)   (Comparative Example 1)

セラミックス基板として縦50mm×幅50mm、厚さ0.6mmの窒化アルミニウム基板を準備し、Ag−Cu−Ti系ろう材を介して厚さ0.2mmの銅板を窒化アルミニウム基板の両面のほぼ全面に接合した以外は、実施例1記載の方法でサンプルを作製し、同様の評価を行った。   An aluminum nitride substrate having a length of 50 mm, a width of 50 mm, and a thickness of 0.6 mm is prepared as a ceramic substrate, and a 0.2 mm-thick copper plate is placed on almost the entire surface of both sides of the aluminum nitride substrate with an Ag-Cu-Ti brazing material. A sample was prepared by the method described in Example 1 except that it was joined, and the same evaluation was performed.

レーザ照射加工を実施した部分は変色がみられた。実施例1と同じ条件の半田濡れ評価では、レーザ照射加工された部分にも半田が濡れてしまった。   Discoloration was observed in the laser-irradiated part. In the solder wetting evaluation under the same conditions as in Example 1, the solder was also wetted on the laser-irradiated portion.

本発明の方法により得た金属セラミックス基板の斜視図である。It is a perspective view of the metal ceramic substrate obtained by the method of this invention. 図1に示す金属セラミックス基板のA−A線断面図である。It is the sectional view on the AA line of the metal ceramic substrate shown in FIG.

符号の説明Explanation of symbols

1 セラミックス基板
2 ろう材
3 アルミニウム回路板
4 めっき層
5 半導体またはチップ部品を半田付けする部分
6 ハンダの濡れない部分
DESCRIPTION OF SYMBOLS 1 Ceramic substrate 2 Brazing material 3 Aluminum circuit board 4 Plating layer 5 The part which solders a semiconductor or a chip component 6 The part which does not wet solder

Claims (3)

ろう接法、直接接合法、及び溶湯接合法の何れかによりセラミックス基板とアルミニウム板を接合、接合されたアルミニウム板を加工することにより、セラミックス基板にアルミニウム回路板を形成した後、該アルミニウム回路板の表面に半田付け可能なニッケルめっき層、ニッケル合金めっき層、及び銅めっき層の1つ電気めっきまたは無電解めっきにより形成し、該めっき層の、半導体素子またはチップ部品を半田付けする部分の周囲めっき層が除去され該アルミニウム回路板が露出する条件で、レーザーを照射し、半田の濡れない部分を形成することを特徴とする金属セラミックス接合回路基板の製造方法。 After the aluminum circuit board is formed on the ceramic substrate by bonding the ceramic substrate and the aluminum plate by any one of the brazing method, the direct bonding method, and the molten metal bonding method, and processing the bonded aluminum plate , the aluminum circuit A portion where one of a nickel plating layer , a nickel alloy plating layer, and a copper plating layer that can be soldered to the surface of the plate is formed by electroplating or electroless plating , and a semiconductor element or chip component of the plating layer is soldered A method for producing a metal-ceramic bonding circuit board, comprising forming a portion where solder is not wetted by irradiating a laser under the condition that the plating layer is removed around the aluminum substrate and the aluminum circuit board is exposed . 前記レーザー照射が、YAG、YVO 4 、CO 2 のいずれかを用いたレーザーマーカー用のレーザー照射装置によるものであることを特徴とする請求項1記載の金属セラミックス接合回路基板の製造方法。 The irradiation of the laser, YAG, YVO 4, claim 1 metal ceramic bonding circuit manufacturing method of the substrate, wherein the der Rukoto by laser irradiation apparatus for laser marker with either CO 2. 前記アルミニウム回路板が、厚さ0.1〜1.0mmのアルミニウムやアルミニウム合金であることを特徴とする請求項1または2記載の金属セラミックス接合回路基板の製造方法。 The aluminum circuit board, according to claim 1 or 2 metal ceramic bonding circuit manufacturing method of the substrate, wherein the aluminum or aluminum alloy der Rukoto thickness 0.1 to 1.0 mm.
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