JP5101813B2 - Bevel processing equipment - Google Patents

Description

The present invention relates to behenate bell processor be polished or cleaned various substrates such as a semiconductor wafer, in particular, unnecessary deposition adhered to the edge portion of the semiconductor wafer, behenate be removed by polishing or washing the dust The present invention relates to a bell processing device.

  Various semiconductor elements include a film forming process for forming various films on the surface of a semiconductor wafer (hereinafter simply referred to as a wafer), an etching process for removing unnecessary portions from the formed thin film, a cleaning process for cleaning the wafer surface, and drying. It is manufactured by repeating various processes such as a drying process to form a fine pattern on the wafer surface.

However, an unnecessary film such as an insulating film or a metal film is formed on the peripheral edge of the formed wafer, that is, the edge portion, and the film formation on the edge portion or a part of the film is about to peel off. Etc. are in an unstable state. If this state is left as it is, the end portion is chipped or peeled off during the transfer process to the next process, and the peeled pieces are scattered as dust. When such dust is scattered, it reattaches to the processed wafer and causes particles.
Therefore, in order to eliminate such dust generation, unnecessary processed films are removed from the edge portion by etching, polishing, or the like (see, for example, Patent Documents 1 to 3 below).

6A and 6B show a wafer edge polishing processing apparatus described in the following Patent Document 1, FIG. 6A is a process diagram of edge polishing, and FIG. 6B is a schematic diagram of the polishing processing apparatus.
As shown in FIG. 6A, an edge polishing method using this wafer edge polishing processing apparatus includes a polishing step 30 for polishing the edge of the wafer, a first cleaning step 31 for cleaning the polished wafer with an acidic cleaning liquid, A second cleaning step 32 for cleaning with an alkaline cleaning liquid, and a drying step 33 for rotating the cleaned wafer at a high speed, spraying pure water to scatter the cleaning liquid and the pure water by centrifugal force, and drying.

  Among these steps, the edge polishing apparatus that performs the polishing step 30 is arranged on a rotary table (not shown) that sandwiches and rotates the wafer W and an outer peripheral edge of the rotary table, as shown in FIG. 6B. The polishing drums 40A to 40C are provided, and the polishing drums 40A to 40C are each provided with a compressible and flexible polishing pad 41A to 41C on the surface thereof, and each polishing drum is attached to the wafer W. In this configuration, different portions of the wafer edge are polished by being pressed against each other at different angles.

FIG. 7 is a top view schematically showing the peripheral unnecessary film removing apparatus described in Patent Document 2 below.
The unnecessary film removing apparatus 42 includes a chuck unit 43 that chucks the wafer W and rotates it around its axis, and a pair of bevel surface polishing members 44a that polish the upper and lower bevel surfaces of the wafer W held by the chuck unit. 44b, an end surface polishing member 45 for polishing the end surface of the wafer W, and a corner polishing member 46 for polishing these corner portions, and the wafer W is rotated, and polishing members are respectively provided at the edge portions of the rotating wafer. By pressing and contacting, the wafer edge is polished to remove unnecessary films. Reference numerals 47 and 48 denote wafer transfer devices.

FIG. 8 shows a wafer cleaning apparatus described in Patent Document 3 below, FIG. 8 (a) is a schematic perspective view, and FIG. 8 (b) is a side view of a wafer supported by a support.
The wafer cleaning apparatus includes a plurality of rollers 49 that support and rotate the wafer W, and a roll 50 that contacts the wafer W rotated by the rollers and supplies a processing liquid. The structure is configured such that a chemical solution is supplied from a pipe 51 to the rotating roll 50 while being pressed against the back surface and cleaned. The roller 49 has a sponge 52 mounted in the groove, and while the wafer W is rotating, the chemical liquid is soaked into the sponge in the roller using the surface tension of the chemical liquid, and the edge portion is formed by the sponge 52 soaked with the chemical liquid. Etching is performed.

  According to the processing apparatuses described in these Patent Documents 1 to 3, unnecessary film formation on the wafer edge portion can be removed. However, according to these polishing processing apparatuses, the region where the semiconductor element is formed on the wafer surface. The so-called device surface may also be contaminated by the cleaning liquid and cause pattern defects, and further cleaning and drying processes are required in the next process, and it is essential to install a cleaning and drying apparatus in order to carry out these processes. It has become.

  That is, the polishing apparatus described in Patent Document 1 includes a polishing process for polishing a wafer edge, a first cleaning process for cleaning the polished wafer with an acidic cleaning liquid, and then a second cleaning process for cleaning with an alkaline cleaning liquid. Further, each apparatus for performing a drying process for drying the cleaned wafer, that is, an edge polishing apparatus, a first cleaning apparatus, a second cleaning apparatus, and a drying apparatus, each of which is a partitioned processing chamber. The wafer is transferred to each processing chamber by an individual transfer device.

  According to this polishing apparatus, the first and second cleaning apparatuses, the drying apparatus, and a transfer device such as a robot arm for transferring the wafer between the apparatuses are required, and the polishing apparatus becomes large and expensive. In addition, since the processing apparatus described in Patent Document 2 has almost the same configuration, there is a similar problem.

  In the processing apparatus described in Patent Document 3, a sponge is attached to a roller of a support that supports a wafer simultaneously with wafer backside processing, and a chemical solution is impregnated into the sponge in the roller. The edge portion is etched by this. Since this apparatus also causes chemicals to adhere to the device surface of the wafer and the material peeled off from the edge or back surface may contaminate the device surface, a cleaning and drying apparatus is separately provided in the same manner as in the above-mentioned Patent Documents 1 and 2. Necessary.

Accordingly, the present inventor has developed a new bevel polishing apparatus to solve these problems, and has already filed a patent application as Japanese Patent Application No. 2005-185807 (hereinafter referred to as a prior application). 9 schematically shows a bevel processing section of the bevel polishing apparatus disclosed in the prior application, FIG. 9A is a cross-sectional view of the bevel processing section, and FIG. 9B is X _{1 in} FIG. 9A. it is a longitudinal sectional view of -X ₁ line. In addition, the cross-sectional view of FIG. 9A is cut at a position passing through a substantially central portion in the vertical direction so that the internal polishing member can be seen.

As shown in FIG. 9, this bevel polishing apparatus is in contact with a substrate rotating part (not shown) for holding and rotating a wafer and an edge part including a beveled part of a wafer W held by the substrate rotating part. A bevel processing unit 60 that polishes the edge portion, and the bevel processing unit 60 is a pair of first and second arms arranged facing each other with a gap D so that a part of the edge portion of the wafer W can be inserted. The first and second arm members 61 and 62 include members 61 and 62, and a polishing member 63 that is mounted in the gap D and contacts and polishes the edge portion of the wafer W, specifically a rotating grindstone. Is provided with supply ports 61 ₁ and 62 ₁ for supplying cleaning liquid to the rotating grindstone 63, and various substances such as droplets supplied to the wafer W and debris detached from the wafer are sucked and discharged in the vicinity of the grindstone 63. Outlet 64 And it has a formed configuration.

Japanese Patent Laid-Open No. 2003-151925 (FIGS. 2, 3, and 6, paragraphs [0011] to [0013]) JP 2002-367939 A (FIGS. 1 and 2, paragraphs [0022] to [0025]) JP 2002-231676 A (FIG. 6, FIG. 7, paragraphs [0018] to [0022])

However, an improvement was found in the bevel polishing apparatus of this prior application. The improvement is that dust or the like may remain at the tip W ₀ of the edge portion even after polishing and cleaning, and it is necessary to remove such dust or the like. Therefore, when this polishing / cleaning process was verified, when the cleaning liquid was supplied from the supply ports 61 ₁ , 62 ₁ , the cleaning liquid was supplied to the rotating edge portion and the rotating grindstone 63 to be used. The cleaning liquid and the substance such as debris separated from the wafer by polishing are sucked and discharged from the discharge port 64 at the back of the gap D and discharged from the bevel polishing unit 60 to the outside. However, in the course of the flow of the cleaning liquid, the used cleaning liquid and the polished material flow in the direction of the arrow shown in FIG. 9A, but the contact portion between the edge portion of the wafer W and the rotating grindstone 63 is rotated. A part of the grindstone 63, that is, a narrow contact surface in a recess provided in the rotary grindstone, and the wafer W and the grindstone 63 are rotated while the cleaning liquid is supplied to this contact surface. After that, it was found that the cleaning liquid cannot follow, and a cleaning residue is generated at the tip portion W ₀ of the edge portion, and dust or the like remains.

Further, in this bevel polishing apparatus, since it is necessary to prepare a polishing member depending on the shape of the edge portion, the polishing member is eliminated, and a bevel polishing apparatus for performing only cleaning with a cleaning liquid is prototyped, and the above cleaning is performed. The cleaning performance including the rest was verified. 10 schematically shows a bevel processing section of a prototype bevel polishing apparatus, FIG. 10A is a cross-sectional view, and FIG. 10B is a vertical cross section taken along line X ₂ -X _{2 in} FIG. FIG. In addition, the cross-sectional view of FIG. 10A is cut at a position passing through a substantially central portion in the vertical direction so that the internal polishing member can be seen.

The bevel processing unit 60A has substantially the same structure as the bevel processing unit 60, and the difference is that the polishing member is eliminated. When the cleaning liquid supplied from the supply ports 61A ₁ and 62A _{1 is} supplied to the edge portions that rotate with each other, the bevel processing unit 60A removes a substance such as residue from the wafer due to the flow of the used cleaning liquid from the gap D. It is sucked into the rear outlet 64A and discharged from the bevel grinder 60A. In the flow of the cleaning liquid or the like, the used cleaning liquid and the material separated by the liquid flow pass through the narrow part D _{0 of the} gap, that is, the narrow gap between the edge part of the wafer W and the discharge port inlet, and then from the discharge port 64A. A flow F indicated by an arrow in FIG. 10B is formed by suction and discharge, and in this flow F, the cleaning liquid supplied from the supply ports 61A ₁ and 62A ₁ is sufficient at the end portion W ₀ of the edge portion. hit not, sometimes dust remains washed remainder occurs in the distal end portion W _0.

  The present invention has been made to solve the above-mentioned problems of the prior art and to improve the improvement of the prior invention. The object of the present invention is to apply a processing solution or slurry to the device surface during edge processing. It is an object of the present invention to provide a bevel processing method that can perform processing without causing the processing residue to occur without scattering the process.

  In addition to the above object, another object of the present invention is to provide a bevel processing method that shortens the processing time and improves the processing efficiency.

  Another object of the present invention is to provide a small-sized bevel processing apparatus having a simple structure capable of realizing the above object.

  Furthermore, another object of the present invention is to provide a low-priced bevel processing apparatus that eliminates the need for a special drying apparatus, a complicated conveying apparatus, etc. in addition to the above-described object.

In order to achieve the above object, an invention of a bevel processing apparatus according to claim 1 of the present application is as follows.
A bevel process comprising: a target substrate rotating unit that holds and rotates a target substrate; and a bevel processing unit that cleans an edge portion including the bevel portion of the target substrate held by the target substrate rotating unit. In the device
The bevel processing unit includes a pair of first and second arm members arranged to face each other with a gap into which a part of the edge portion of the substrate to be processed is inserted, and at least one of the first and second arm members Is provided with a supply port for supplying cleaning liquid, a discharge port for sucking and discharging used cleaning liquid is provided in the vicinity of the edge portion inserted into the bevel processing unit, and the edge portion for rotating the supply port is provided with the bevel Provided on the inlet side to be inserted into the processing unit, the discharge port is provided on the outlet side from which the edge portion exits from the bevel processing unit, and a predetermined distance is provided between the supply port and the discharge port. A flow path is formed along the outer peripheral edge of the edge portion, and in the vicinity of the supply port, a mist generating means for misting the cleaning liquid supplied from the supply port is provided, and the cleaning liquid is supplied to the supply port. After cleaning the edge, By sucking and discharging the substances separated from the used washing liquid and the substrate to be processed from the outlet, the edge portion to a dry state when the cleaning edge portion comes out of the beveled portion, the mist generation means Is formed of a concave groove having a predetermined opening width and depth .

By providing the above configuration, the present invention has the following excellent effects. That is, according to the first aspect of the present invention, since the cleaning liquid is supplied in the form of a mist to the edge portion of the substrate to be processed, the cleaning liquid spreads almost uniformly on the edge portion, and good cleaning can be performed.
In addition, the cleaning of the edge portion of the substrate to be processed is processed in the bevel processing section, and the supplied cleaning solution and all substances that affect the device surface such as debris peeled off from the substrate are sucked and discharged from the discharge port. As a result, the cleaning liquid and the like are no longer scattered from the bevel processing unit, and the device surface cleaning / drying process required in the prior art becomes unnecessary. As a result, the device surface cleaning / drying processing apparatus and the transport apparatus necessary for these processes are not required, and the apparatus can be easily downsized and manufactured at low cost. In addition, when the edge portion cleaned in the bevel processing section exits the bevel processing section, all substances that affect the substrate to be processed such as cleaning liquid and waste of the substrate to be processed are sucked and discharged by the discharge port. Therefore, it is in a dry state. As a result, the cleaning liquid supplied to the edge portion in the bevel processing unit does not reach the device surface of the substrate to be processed, and the entire surface of the substrate to be processed except the portion covered by the bevel processing unit is in a dry state. Since the process is performed while maintaining, a series of cleaning processes can be performed without affecting the device surface or the like. In addition, since the edge portion is cleaned by the cleaning liquid that forms the flow path along the outer peripheral edge thereof, there is no cleaning residue on the edge portion, and no dust or the like remains on the edge portion. Furthermore, fog is generated because the pressure of the fluid containing the cleaning liquid changes due to the concave groove. Therefore, the fog generating means can be formed with a simple structure.

  Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a bevel processing method and a bevel processing apparatus for embodying the technical idea of the present invention, and the present invention is specified to the bevel processing method and the bevel processing apparatus. And other embodiments within the scope of the claims are equally applicable.

  1 is a schematic sectional view showing a bevel processing apparatus according to an embodiment of the present invention, FIG. 2 is a plan view showing the relationship between a polishing head and a wafer, FIG. 3 shows the polishing head of FIG. 2, and FIG. Is a perspective view, and FIG. 3B is a cross-sectional view taken along line AA of FIG. The bevel processing apparatus of FIG. 1 shows a state in which a part thereof is cut at a position where a wafer rotation shaft 4 connected to a rotation drive mechanism 5 described later is provided so that the structure can be easily understood. .

  As shown in FIGS. 1 and 2, the bevel processing apparatus 1 has a rotary table 2 that holds and rotates the wafer W substantially horizontally, and an edge portion that is located on a part of the outer peripheral edge of the wafer W and polishes the edge portion. A bevel processing unit 7 for cleaning, and the turntable 2 and the bevel processing unit 7 are accommodated in a processing cup 6. The bevel processing unit 7 includes a support arm (not shown) having a predetermined length and a polishing head 8 (cleaning heads 8A and 8B) (see FIGS. 3 and 4) coupled to one end of the support arm. The other end is fixed to a support base (not shown) so as to be rotatable. The support arm is rotated by a driving mechanism (not shown) so that the polishing head 8 is pressed and brought into contact with the edge portion of the wafer W with a predetermined pressure.

  The turntable 2 includes a holding table 3 on which the wafer W is placed, a rotating shaft 4 connected to the holding table 3, a rotation driving mechanism 5 connected to the rotating shaft 4 and rotated together with the holding table 3, have. As shown in FIG. 2, the holding table 3 has a disk shape smaller than the wafer W, and is fixed by a chuck for holding and fixing the wafer W placed coaxially on the holding table 3.

  As shown in FIG. 2, one or a plurality of bevel processing units 7 are arranged along the outer periphery of the wafer W. A polishing head 8 for polishing the edge portion or cleaning heads 8A and 8B for cleaning the edge portion are selected and attached to the bevel processing unit 7. First, a processing apparatus provided with the polishing head 8 will be described. Reference numeral 7 ′ denotes another bevel processing unit.

  As shown in FIG. 3, the polishing head 8 includes a pair of first and second arm members 9 and 10 made of plate members that extend from a support arm (not shown) and are vertically opposed to each other. A U-shaped groove 12 having a gap D into which a part of the edge portion of the wafer W extending in the horizontal direction is inserted is formed between the arm members 9 and 10. A rotating grindstone 13 that is rotatably mounted is provided at the back of the U-shaped groove 12.

The first arm member 9 and the second arm member 10 have supply ports 9 ₁ , 10 _{1 through} which the cleaning liquid is supplied to the inner surfaces thereof, that is, the rotating wafer W is first inserted into the U-shaped groove 12. Each is formed opposite to the entrance side. A discharge port 14 is provided at a position away from these supply ports 9 ₁ , 10 ₁ , that is, at the back of the exit-side groove 12 through which the rotating wafer W comes out of the U-shaped groove 12.

The supply ports 9 ₁ , 10 ₁ and the discharge port 14 discharge the supply ports 9 ₁ , 10 ₁ to the entrance side of the U-shaped groove 12, that is, the unprocessed side of the wafer W with respect to the rotation direction of the wafer W. When the outlet 14 is disposed on the outlet side of the U-shaped groove 12, that is, on the processed side of the wafer W, as shown in FIG. 3B, between the supply ports 9 ₁ , 10 ₁ and the discharge port 14. A predetermined distance is formed, and the cleaning liquid supplied from the supply ports 9 ₁ , 10 ₁ forms a flow path F that flows along the outer peripheral edge of the edge portion of the wafer W during this period. By this flow path F, the cleaning liquid spreads uniformly over the edge portion in the polishing head 8, so that no cleaning residue remains and no dust or the like remains. The supply ports 9 ₁ , 10 ₁ are provided opposite to the first and second arm members 9, 10, but may be provided only on one of the arm members.

As shown in FIG. ₁ , the supply ports 9 ₁ , 10 ₁ of the polishing head 8 are connected to a cleaning liquid supply source 16a via a valve V ₁ in the middle of the supply path L ₁ . For example, pure water is used as the cleaning liquid supplied from the cleaning liquid supply source 16a. In addition, ion water (functional water), ozone water, chemical liquid, etc. may be used as the cleaning liquid. The discharge port 14 is connected to the suction and discharge equipment 16b midway through the valve V ₂ by the discharge path L _2. Suction is adjusted by a valve V ₂ by using the factory exhaust pressure. The time may be via a pump for assisting in the middle of the discharge passage L _2.

  The rotating grindstone 13 has a conical shape with a constricted central part, and a through hole is formed in the axial direction of the rotating grindstone 13. The constricted portion 13 a of the rotating grindstone 13 has a curved shape so that the bevel portion and the edge side surface of the oblique upper surface and the oblique lower surface of the wafer W can be polished. The rotary grindstone 13 is fixed to the through hole by rotating the support shaft 13b, and both ends of the support shaft 13b are rotatably coupled to the first and second arm members 9 and 10. One end of the support shaft 13b is connected to a rotation mechanism (not shown).

Next, a wafer polishing / cleaning method using the polishing apparatus configured as described above will be described mainly with reference to FIGS.
First, the wafer W is placed on the holding table 3 of the turntable 2 so that the center of the wafer W is located on the extension line of the axis of the rotary shaft 4, and the wafer W is fixed by evacuating the placement surface. Then, the wafer W is rotated in a predetermined direction, for example, clockwise by a rotation drive mechanism 5 connected to the rotation shaft 4 at a predetermined speed, for example, a speed of one rotation in 20 seconds. Next, the support mechanism (not shown) is rotated by the drive mechanism of the bevel processing unit 7 so that the polishing head 8 mounted on the bevel processing unit 7 is brought into press contact with the edge portion of the wafer W.

Subsequently, the rotary drive mechanism 5 is operated to rotate the rotary grindstone 13, and at the same time, the cleaning liquid is supplied from the supply ports 9 ₁ , 10 _1, and the edge portion of the wafer W is polished by the rotary grindstone 13, and the discharge port The used cleaning liquid and polishing residue are sucked and discharged from No.14.

Further, each of the supply ports of the polishing head ₉ 1, 10 ₁ and outlet 14, the supply ports ₉ 1 with respect to the rotation direction of the wafer W, 10 ₁ the inlet side of the U-shaped groove 12, i.e. non wafer W Since the discharge port 14 is disposed on the exit side of the U-shaped groove 12 on the processing side, that is, on the processed side of the wafer, as shown in FIG. 3B, the supply ports 9 ₁ , 10 ₁ The supplied cleaning liquid has a predetermined distance between each of the supply ports 9 ₁ , 10 ₁ and the discharge port 14, and a flow path F that flows along the outer peripheral edge of the edge portion is formed therebetween. Due to the path F, the cleaning liquid is evenly distributed over the edge portion in the polishing head 8, so that no cleaning residue remains and no dust or the like remains.

In addition, by this suction / exhaust, the cleaning liquid is sprayed, the edge is cleaned and dried at the contact polishing portion between the wafer edge portion and the rotating grindstone, and the cleaning solution is not scattered outside the polishing head. . Therefore, since this polishing head 8 has a predetermined width, when a part of the outer peripheral edge of the wafer W is inserted into the U-shaped groove 12, the upper and lower surfaces of the wafer edge are covered in a predetermined range. Since polishing, cleaning, used cleaning liquid, and the like are sucked and discharged at the covered portion and returned to the dry state, the cleaning liquid can be prevented from jumping to the device surface of the wafer W.
According to this bevel processing unit, when a part of the outer peripheral edge of the wafer W is inserted into the U-shaped groove 12, the upper and lower surfaces of the wafer edge are covered within a predetermined range, and polishing, cleaning and use are performed at the covered portion. Since the cleaning liquid is sucked and discharged, and the atmosphere in the processing cup 6 is also discharged through the U-shaped groove 12, the atmosphere is returned to the dry state, so that the cleaning liquid is applied to the device surface of the wafer W. You can stop jumping out.

  If the drying is insufficient, one or more discharge ports dedicated to drying are provided in the first and second arm members 9, 10, etc., and the wafer passes through the polishing head 8 in a completely dry state. You may make it come out. Further, when a plurality of the bevel processing portions are arranged along the outer periphery of the wafer W, the edge portion can be efficiently polished and cleaned, and the processing speed can be increased. Furthermore, by attaching a different polishing member to each bevel processing section, it becomes possible to perform efficient polishing and cleaning in accordance with the state of the edge section. Therefore, in this bevel processing apparatus, the wafer enters the polishing head in a dry state, wet polishes, and comes out in the dry state, that is, dry-in / dry-out.

  In the above-described bevel processing apparatus, the polishing member is used. However, when dust or the like adhering to the edge portion is removed, the polishing member is not particularly necessary, and can be removed by cleaning only with the cleaning liquid. Accordingly, the cleaning heads 8A and 8B that perform such cleaning will be described below. 4A and 4B show the cleaning head, FIG. 4A is a perspective view, and FIG. 4B is a cross-sectional view taken along the line A′-A ′ of FIG. The cleaning head 8A has substantially the same structure as the polishing head 8, and the difference is that the polishing member is eliminated. Therefore, avoiding repeated explanation, the same part is denoted by A and the explanation of the polishing head is used.

The cleaning head 8A is provided with a pair of first and second arm members 9A and 10A made of plates that are vertically opposed to each other, and the edge of the wafer W extends horizontally between the arm members 9A and 10A. A U-shaped groove 12A having a gap D into which a part of the portion is inserted is formed. In the first arm member 9A and the second arm member 10A, supply ports 9A ₁ and 10A _{1 through} which cleaning liquid is supplied to the inner surface are provided at one end portion of the cleaning head 8A, that is, the rotating wafer W enters the U-shaped groove 12A. Each is formed opposite to the entrance side to enter first. A discharge port 14A is provided at a position away from the supply ports 9A ₁ , 10A ₁ , that is, at the back of the exit-side groove 12A through which the rotating wafer W comes out of the U-shaped groove 12A.

Each supply ports _9A 1, 10A ₁ and an outlet 14A, the respective supply ports _9A 1, 10A ₁ with respect to the rotation direction of the wafer W inlet side of the U-shaped groove 12A, that is, unprocessed side of the wafer W, discharging When the outlet 14A is arranged on the inlet / outlet side of the U-shaped groove 12A, that is, the processed side of the wafer W, as shown in FIG. 4B, between the supply ports 9A ₁ , 10A ₁ and the outlet 14A. A predetermined distance is formed, and a flow path F is formed between the cleaning liquids supplied from the supply ports 9A ₁ and 10A ₁ along the outer peripheral edge of the edge portion. The flow path F, washing the edge portion of the head 8A evenly cleaning liquid spreads also eliminates residual dust cleaning remainder is eliminated generated at the tip W ₀ of the wafer W that shown in FIG. 10 (b) . Each supply ports _9A 1, 10A ₁ first, second arm member 9A, is provided to face the 10A, may be provided only on either one of the arm members.

Further, in such a cleaning head 8A, it is preferable that the cleaning liquid supplied from the supply ports 9A ₁ , 10A ₁ is in the form of a mist in the head. FIG. 5 shows a cleaning head provided with a mist generating means, FIG. 5 (a) is a cross-sectional view, and FIG. 5 (b) is a cross-sectional view taken along line BB of FIG. 5 (a). FIG. 5A is a cross-sectional view corresponding to FIG. This cleaning head 8B has substantially the same structure as the above-described cleaning head 8A, and the difference is that a mist generating means is provided. Therefore, avoiding repeated explanation, the same part is given the same number with A ′ and the explanation of the cleaning head 8A is used.

Mist generation means 15 is composed of a concave groove 15A formed in the vicinity of the supply port 9A _'1. The concave groove 15A, as shown in FIG. 5 (a), the supply ports 9A 'immediately below _1, i.e., the supply port 9A' in the direction the cleaning liquid supplied from the ₁ is orthogonal to the direction of flow to the discharge port 14A ', It is formed with a predetermined opening width and depth.

'The provision in the vicinity of _1, the wafer W and the first arm member 9A' such concave grooves 15A supply port 9A gap between the gap D ₁ of the portion where the recessed groove 15A is formed is not formed a groove portion the greater becomes than the gap D _2, the cleaning liquid passing through the gap becomes atomized changes air pressure as it flows to a place wider from where narrow gap. Therefore, since the cleaning liquid is atomized, it can be supplied to the edge portion of the wafer W substantially uniformly, so that good cleaning can be performed. The concave groove 15A is 'are formed in the vicinity of _1, the supply port 10A facing' supply port 9A is also formed in _one.

  Therefore, according to the polishing head 8 or the cleaning heads 8A and 8B, the edge portion of the wafer W is polished, cleaned and dried by the polishing portion and the cleaning portion, and polishing residue, cleaning liquid, etc. are removed from the polishing head or the cleaning head. Will not be scattered.

  As described above, the bevel processing apparatus of the present invention is characterized in that the wafer enters the bevel processing section in a dry state, wet polishes, and comes out in the dry state, that is, dry-in / dry-out. Moreover, it is not necessary to use a chemical. Furthermore, the polishing head 8 and the cleaning heads 8A and 8B are configured as individual heads or connected ones.

  In this embodiment, a rotating grindstone is used as the polishing member. However, this grindstone is appropriately made of metal, metal oxide, metal nitride, metal carbide, ceramics, synthetic resin, diamond, or a composite material thereof. You can select and use. Moreover, although the case where the rotating grindstone which consists of a column-shaped rigid body with which the center part was narrowed as a polishing member was demonstrated here, as this polishing member, comparatively flexible flexible members, such as resin and a buff, a brush, Polishing may be performed using a sponge or a composite material thereof, and such a polishing member may be selected according to the state of the wafer edge. Further, as shown in FIG. 2, the embodiment in which one bevel processing unit 7 is provided on the outer periphery of the wafer has been described. However, as shown by the dotted line in FIG. 2, two or more bevel processing units 7 are provided. Also good. By providing a plurality of bevel processing units 7, it is possible to increase the processing efficiency.

FIG. 1 is a schematic sectional view showing a bevel processing apparatus according to an embodiment of the present invention. FIG. 2 is a plan view showing the relationship between the bevel processing unit and the wafer. 3 shows the polishing head of FIG. 2, FIG. 3 (a) is a perspective view, and FIG. 3 (b) is a cross-sectional view taken along line AA of FIG. 3 (a). FIG. 4 shows the cleaning head, FIG. 4 (a) is a perspective view, and FIG. 4 (b) is a cross-sectional view taken along the line A'-A 'of FIG. 4 (a). FIG. 5 shows another cleaning head, FIG. 5 (a) is a sectional view, and FIG. 5 (b) is a sectional view taken along the line BB of FIG. 5 (a). FIG. 6 shows a conventional edge polishing method and polishing apparatus, FIG. 6 (a) is a process chart of an edge polishing process, and FIG. 6 (b) is a schematic diagram of the polishing apparatus. FIG. 7 is a top view schematically showing another peripheral portion unnecessary film removing apparatus according to another prior art. FIG. 8 is a cross-sectional view of a wafer supported by a support showing still another prior art wafer cleaning apparatus. 9 schematically shows a bevel processing section of the bevel polishing apparatus disclosed in the prior application, FIG. 9A is a cross-sectional view of the bevel processing section, and FIG. 9B is X _{1 in} FIG. 9A. it is a longitudinal sectional view of -X ₁ line. 10 schematically shows a bevel processing section of a bevel polishing apparatus as a prototype related to FIG. 9, FIG. 10 (a) is a cross-sectional view, and FIG. 10 (b) is X ₂ -X in FIG. 10 (a). It is a longitudinal cross-sectional view of ₂ lines.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Bevel processing apparatus 2 Rotary table (substrate rotating part to be processed)
DESCRIPTION OF SYMBOLS 3 Holding stand 4 Rotating shaft 5 Rotation drive mechanism 6 Processing cup 7 Bevel processing part 8 Polishing head 8A, 8B Cleaning head 9 1st arm member 10 2nd arm member 9 ₁ , 10 ₁ supply port 12 U-shaped groove 13 Rotating grindstone 14 Discharge port W Wafer (Processed substrate)

Claims (1)

A bevel process comprising: a target substrate rotating unit that holds and rotates a target substrate; and a bevel processing unit that cleans an edge portion including the bevel portion of the target substrate held by the target substrate rotating unit. In the device
The bevel processing unit includes a pair of first and second arm members arranged to face each other with a gap into which a part of the edge portion of the substrate to be processed is inserted, and at least one of the first and second arm members Is provided with a supply port for supplying cleaning liquid, a discharge port for sucking and discharging used cleaning liquid is provided in the vicinity of the edge portion inserted into the bevel processing unit, and the edge portion for rotating the supply port is provided with the bevel Provided on the inlet side to be inserted into the processing unit, the discharge port is provided on the outlet side from which the edge portion exits from the bevel processing unit, and a predetermined distance is provided between the supply port and the discharge port. A flow path is formed along the outer peripheral edge of the edge portion, and in the vicinity of the supply port, a mist generating means for misting the cleaning liquid supplied from the supply port is provided, and the cleaning liquid is supplied to the supply port. After cleaning the edge, By sucking and discharging the substances separated from the used washing liquid and the substrate to be processed from the outlet, the edge portion to a dry state when the cleaning edge portion comes out of the beveled portion, the mist generation means Is formed with a concave groove having a predetermined opening width and depth .

Images