JP5193957B2 - Organic EL device and manufacturing method thereof - Google Patents

Description

    The present invention relates to an organic EL element in which an organic layer is sandwiched between a pair of electrodes and power is supplied from one side of the electrode, and a method for manufacturing the same.

  In general, in an organic EL (electroluminescence) element, an organic light emitting layer and a cathode electrode are laminated on an anode electrode formed on a substrate. In order to extract the light generated in the organic light emitting layer, one of the electrodes is made of a transparent material. Further, in order to prevent the wiring connected to the electrode from blocking the light emitting region and to facilitate the connection with the external drive circuit, as shown in Patent Documents 1 and 2, the terminal part (feeding part) is connected to the electrode. A configuration provided on one side has been proposed.

  By the way, it is necessary to extract light from at least one of the electrodes with reference to the organic light emitting layer. Therefore, the electrode provided on the light extraction side is made of a material having a higher volume resistivity than the other electrode. For this reason, when the terminal portion is formed on one side of the electrode, the current path from the electrode made of a material having a high volume resistivity to the other electrode through the organic light emitting layer is an electrode made of a material having a high volume resistivity. The resistance value varies greatly depending on whether it is near or far from the terminal.

  For example, when the anode side of the organic EL element is the light extraction surface, the resistance value of the current path flowing from the portion close to the anode terminal to the cathode through the organic light emitting layer is small. On the other hand, the resistance value of a current path that flows from a location far from the terminal of the anode to the cathode via the organic light emitting layer increases. For this reason, when the driving power exceeds a certain value, the vicinity of the anode terminal is bright, and the area near the anode terminal is dark, resulting in uneven brightness.

  As a result, the entire light emitting region cannot emit light with high brightness. In addition, since the luminance distribution is not uniform, it may not be used as a light emitting element. In addition, the lifetime differs between a location where a large amount of current flows and a location where a small amount of current flows, and a lifetime difference occurs in the light emitting region of the element. Because the life is shortened in the part where the current is large, the organic light-emitting layer near the anode terminal is heavily loaded compared to the element in which the current flows uniformly, so the deterioration near the anode terminal progresses faster than the other parts. There was a problem such as.

  In order to solve the above problems, as shown in Patent Document 3, the thickness of the organic EL layer in the vicinity of the terminal portion of the anode made of a material having a high volume resistivity is increased, and the terminal portion of the anode There has been proposed an organic EL element in which the thickness of the organic EL layer is made thinner toward the center farther from the substrate and formed into a concave shape. The film thickness of the organic EL layer in the vicinity of the anode terminal portion is made thicker than that in the central portion, and the resistance of the organic EL layer in the vicinity of the anode terminal portion is increased so that the luminance of the light emitting region becomes uniform.

Japanese Patent Laid-Open No. 2005-100904 JP-A-2005-100916 Japanese Patent Laid-Open No. 11-40362

  However, when the resistance is increased by changing the film thickness of the organic EL layer, the resistance value in each current path is not uniform unless the film thickness is considerably increased as it approaches the anode terminal portion side. Further, when the organic EL layer is formed in a concave shape and the curvature thereof is increased, disconnection of the electrode laminated on the organic EL layer is likely to occur.

  If the film thickness of the organic EL layer is changed between the central portion and the vicinity of the anode terminal portion, the emission color may be greatly different between the central portion and the vicinity of the anode terminal portion due to light interference when the organic EL layer emits light. is there. For this reason, there has been a problem that a structure that does not interfere with light has to be added, and an advanced element design is required.

  Moreover, in order to form the organic EL layer thicker as it approaches the anode terminal side, for example, a complicated mask as shown in Patent Document 3 is prepared, It was necessary to redesign the dimensions of each part of the mask according to the inclination, which was troublesome and costly.

  The present invention was devised to solve the above-described problems, and prevents luminance unevenness in the light emitting region of the organic EL element and deterioration of the organic layer in the vicinity of the power feeding portion of the electrode, thereby preventing electrode disconnection and light emission interference. An object of the present invention is to provide an organic EL element that can be formed without using a complicated mask and a method for manufacturing the same.

  In order to achieve the above object, an organic EL device of the present invention includes a first electrode, a second electrode having a volume resistivity higher than that of the first electrode, the first electrode, and the second electrode. And an organic layer in the vicinity of the power supply unit by irradiating the organic layer with ultraviolet light, and an organic layer sandwiched between the organic layer and a power supply unit provided to supply power to one side of the second electrode. The main feature is that the resistance value of the region is higher than the resistance value of the organic layer located farther than the organic layer region.

  Moreover, the manufacturing method of the organic EL element of the present invention includes a first electrode, a second electrode having a volume resistivity higher than that of the first electrode and on the light extraction side, the first electrode, and the second electrode. An organic layer sandwiched between the electrodes of the second electrode and a power supply unit provided to supply power to one side of the second electrode, and when viewed from the back surface of the second electrode, A first step of covering the back surface of the second electrode with a light shielding mask that blocks ultraviolet light so that the organic layer region in the vicinity of the power feeding portion is not hidden, and the light shielding mask and the second from the rear of the light shielding mask after the first step. The main feature is that it includes a second step of irradiating ultraviolet light toward the electrode.

  The organic EL element of the present invention includes a first electrode, a second electrode having a higher volume resistivity than the first electrode, an organic layer sandwiched between the first electrode and the second electrode, A power supply unit provided to supply power to one side of the second electrode, and by irradiating the organic layer with ultraviolet light, the resistance value of the organic layer close to the power supply unit is It is configured to be higher than the resistance value of the distant organic layer. In this way, by using ultraviolet light, the resistance value can be changed without changing the film thickness of the organic layer, so that disconnection of electrodes and interference of light emission can be prevented and a complicated mask can be formed. A high resistance region can be formed without using it.

  In addition, even after the organic EL element is completed or after the organic EL element is packaged and completed as an organic EL device, the resistance value is changed for each region of the organic layer by ultraviolet light irradiation by a simple process. Can increase production efficiency.

It is a top view which shows the structural example of the organic EL element of this invention. It is a figure which shows the AA cross section of FIG. 1, and a BB cross section. It is a figure which shows the general view of the organic electroluminescent apparatus using the organic electroluminescent element of this invention. It is a figure which shows CC cross section of FIG. It is the top view and sectional drawing which show the other structural example of the organic EL element of this invention. It is process drawing which performs the resistance increase process by ultraviolet light irradiation using an organic EL apparatus. It is a figure which shows the relationship between a light shielding mask and a light emission area | region. It is a figure which shows the structural example of a light shielding mask. It is a figure which shows the relationship between the edge position of a light shielding mask, ultraviolet light irradiation amount, and the luminance distribution of a light emission area | region.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The drawings are schematic and different from the actual ones. Moreover, the part from which the relationship and ratio of a mutual dimension differ also in between drawings is contained.

  First, as an example of the organic EL element 10 of the present invention, cross-sectional views of an element composed of an anode, an organic layer, and a cathode are shown in FIGS. On the other hand, FIG. 1 is a plan view of the organic EL element 10 of the present invention as viewed from above, and the AA cross section of FIG. 1 is FIG. 2A, and the BB cross section of FIG. ).

  An organic layer 2 is laminated on the anode 1, and a cathode 3 is formed on the organic layer 2. The organic layer 2 is sandwiched between the anode 1 and the cathode 3. The anode 1 includes a power feeding portion 1a and an electrode region 1b provided on one side of the anode. The power feeding unit 1a corresponds to a connection terminal for supplying power to the organic layer 2 from the outside, and the electrode region 1b is a region in contact with the organic layer 2 and corresponds to a light emitting region. The cathode 3 includes a power feeding portion 3a and an electrode region 3b provided on one side of the cathode. The power feeding unit 3a corresponds to a connection terminal for supplying power to the organic layer 2 from the outside, and the electrode region 3b is a region in contact with the organic layer 2 and corresponds to a light emitting region.

  Here, the anode 1 is an electrode for injecting holes into the organic layer 2. In this embodiment, light is extracted to the anode 1 side. The anode 1 is made of a metal oxide such as ITO, IZO, tin oxide, zinc oxide, or titanium nitride, or a metal nitride so as to be transparent to light including visible light and ultraviolet light. On the other hand, when light is extracted to the cathode 3 side, a material that reflects light is used for the anode 1, and metals such as Al, Ni, Ti, and alloys thereof are used.

  On the other hand, the cathode 3 is an electrode for injecting electrons into the organic layer 2, and a metal such as Al, Li, Mg, or Ag is used to reflect light and guide it to the anode on the light extraction side. Moreover, when taking out light to the cathode 3 side, the electrode etc. which laminated | stacked the transparent conductive oxide on thin film alloys, such as Mg-silver, are used.

  The organic layer 2 is usually composed of a laminate of organic layers including an organic light emitting layer. Since the volume resistivity of the anode 1 is much larger than that of the cathode 3, the current supplied from the power feeding portion 1 a progresses in the electrode region 1 b as shown by the broken arrow in FIG. The amount of current decreases. For this reason, conventionally, a large current flows in the organic layer close to the power feeding portion of the anode, and a small current flows in a portion far from the power feeding portion, that is, the central portion of the organic layer.

  In the present invention, in the organic layer 2, the resistance value of the P2 region (shaded portion in the drawing) closest to the end of the power feeding portion 1a of the anode 1 having a high volume resistivity is formed highest, and the central portion P1 region of the organic layer 2 is formed. The resistance in the shaded area in the figure was formed to be the lowest. Further, the resistance value of the organic layer 2 is inclined in the region between P1 and P2. By configuring as described above, the resistance value increases in order as the organic layer in the P1 region progresses to the organic layer in the P2 region, and current hardly flows. For this reason, the amount of current reaching the central portion (corresponding to the position of P1) in the electrode region 1b is increased, and the current flowing from the anode 1 to the cathode 3 through each region of the organic layer 2 can be made substantially equal. it can.

  In the present invention, ultraviolet light irradiation (UV irradiation) is used to change the resistance value of each part of the organic layer 2 without changing the film thickness or material of the organic layer 2. When the organic layer 2 is irradiated with ultraviolet light, the upper layer of the organic layer 2 is particularly altered and the resistance value is increased. Further, the higher the ultraviolet light irradiation amount, the higher the resistance.

  Using this action, an organic EL element was produced as follows. First, the organic EL element is packaged and formed into a final product form of the organic EL device. For example, as shown in FIG. 3, an organic EL device using a rectangular substrate 21 and a hollow sealed can 22 can be used as a housing that houses an organic EL element.

  A CC cross section of FIG. 3 is shown in FIG. A rectangular organic EL element 10 is disposed on the substrate 21, and a sealing can 22 is covered so as to completely enclose the organic EL element 10. A desiccant 23 is provided inside the sealed can 22 so as to absorb moisture and the like. The substrate 21 is made of a material that transmits light including ultraviolet light in order to extract light emitted from the organic EL element 10, and is made of, for example, glass or plastic. Moreover, glass, metal, etc. can be used for the sealing can 22.

  The organic EL element 10 has the configuration shown in FIGS. Specifically, ITO was used for the anode 1 and Al was used for the cathode 3. In addition, the laminate of the organic layer 2 was formed by stacking two units of a blue light emitting laminate and a red light emitting laminate in order on the anode 1 to obtain a white element. First, the blue light-emitting laminate includes an α-NPD layer having a thickness of 50 nm as a hole transport layer, a layer having a thickness of 30 nm as a light-emitting layer and a DPVBi doped with 10 Wt% BCzVBi, and an aluminum complex having a thickness of 40 nm as an electron transport layer. As the (Alq) layer, a layer in which a lithium complex (Liq) layer having a thickness of 1 nm was sequentially stacked as an electron injection layer was used. Next, Al having a thickness of 1 nm was laminated as an intermediate electrode, and a red light emitting laminate was laminated.

  By making the thickness of the intermediate electrode thin as described above, the red light emitted from the red light emitting laminate can be transmitted to the anode 1 side. The red light-emitting laminate has a 50 nm-thick α-NPD layer as a hole transport layer, a 30 nm-thick Alq layer doped with 5 Wt% DCM as a light-emitting layer, and a 40 nm-thick Alq layer as an electron transport layer. A layer in which a Liq layer having a thickness of 1 nm is stacked is used as the electron injection layer. Finally, 100 nm-thick Al was laminated as the cathode 3.

  The total size of the organic EL element 10 in FIG. 1 or the size of the anode 1 is formed to be about 150 mm × 150 mm, and the size of the light emitting region corresponding to the electrode regions 1b and 3b is about 130 mm × 130 mm. It formed so that it might become.

  The organic EL element 10 can also be configured as shown in FIG. 5, for example. 1 and 2, the power feeding portion 1 a of the anode 1 is provided at both ends of the rectangular anode 1, but in the embodiment of FIG. 5, it is provided only at one side. On the other hand, the cathode 3 is provided with the power feeding part 3a only on one side. The power feeding unit 1a and the power feeding unit 3a are formed at both ends of the organic EL element and face each other.

  Here, the resistance value of the organic layer region closest to the end of the power feeding portion 1a of the anode 1 having a high volume resistivity is formed highest, and the resistance value of the organic layer region closest to the end of the power feeding portion 3a of the cathode 3 is the highest. It is formed low, and the resistance value of the organic layer 2 is inclined between these regions. For this reason, as indicated by the broken-line arrow in FIG. 5B, the amount of current supplied from the power feeding unit 1a decreases as it travels through the electrode region 1b. The amount of current reaching the end portion can be increased, and the current flowing from the anode 1 to the cathode 3 through each region of the organic layer 2 can be made substantially equal.

  FIG. 6 shows a configuration in which a light shielding mask is arranged on the device configured as shown in FIG. As shown in FIG. 6, the light shielding mask 30 is disposed on the back surface of the substrate 21. The light shielding mask 30 is made of a material that does not transmit at least ultraviolet light, and for example, a SUS mask is used. FIG. 7 shows a plan view of the arrangement relationship of the organic EL element 10, the anode 1, the light shielding mask 30, and the like in FIG. 6 viewed from the light shielding mask 30 side. For the sake of clarity, only the relationship among the light shielding mask 30, the anode 1, and the organic EL element 10 is shown.

  In FIG. 7, the shaded area is an area where the light shielding mask 30 is arranged. As can be seen from this figure, the light shielding mask 30 covers the back surface of the anode 1 and is composed of a mask having a width shorter than the length between the power feeding portions 1 a of the anode 1. The center of the light shielding mask 30 and the center of the power feeding unit 1a are arranged to coincide with each other. The length of the light shielding mask 30 in the direction along the power feeding portion 1a (vertical direction in FIG. 7) is required to be at least the length covering the entire light emitting region, that is, the length in the vertical direction of the electrode region 1b. In FIG. 7, it is formed longer than the light emitting region.

As described above, when the light shielding mask 30 is disposed, a region that is not covered with the light shielding mask 30 is generated in the organic layer 2 of the organic EL element 10. When this region is 10a, it corresponds to an organic layer region in the vicinity of the power feeding portion 1a. As shown in FIG. 6, when the ultraviolet light is irradiated from the rear side of the light shielding mask 30 to the light shielding mask 30 side, the region 10a is irradiated as it is without being blocked by the ultraviolet light, and the resistance is increased. The region 10a in the organic layer 2 is referred to as a high resistance region. Here, the higher resistance region 10a has higher resistance as the amount of ultraviolet light irradiation (J / cm ² ) is larger. Therefore, by preparing several shading masks 30 of different sizes and sequentially changing them from a larger one to a smaller one and irradiating a certain amount of ultraviolet light each time, the resistance value of the organic layer 2 is inclined. I will make it.

  For example, a light shielding mask 30 as shown in FIG. 8 is prepared. This illustrates several types of masks that differ only in the width of the light shielding mask 30, that is, in the length direction between the feeding portions 1 a of the anode 1. Four types of masks having a lateral width of L1, L2, L3, and L4 are illustrated. When the length between the power feeding portions 1a of the anode 1 is L, L> L1> L2> L3> L4 are formed.

  First, a light shielding mask 30 having a lateral width of L1 is arranged as shown in FIGS. 6 and 7, and then irradiated with ultraviolet light. Next, the light shielding mask having a lateral width of L1 is removed, and is replaced with a light shielding mask having a lateral width of L2. Irradiate light. Thereafter, the mask is replaced with the L3 width mask 30 and irradiated with ultraviolet light, and finally the light mask 30 is replaced with the L4 width mask and irradiated with ultraviolet light.

  In this way, when the light shielding mask 30 having the lateral width of L1 is used, the region 10a of the organic layer 2 that protrudes from the light shielding mask 30 is irradiated with the most ultraviolet light when integrated. Highest resistance. Next, the region 10b having the difference between the L1 width mask and the L2 width mask has the second highest resistance. Similarly, the regions 10c and 10d are arranged in descending order of resistance. In summary, the magnitude of the resistance value in each region is 10a> 10b> 10c> 10d. In this manner, the resistance value can be changed depending on the region of the organic layer 2 to be inclined.

  In the above example, four types of masks having different widths are used. However, the resistance value of the organic layer 2 may be more finely inclined by using five or more types of masks having different widths.

  Further, as shown in FIG. 4, after packaging into an organic EL device, the high resistance process is performed when the organic EL element 10 is completed without performing the high resistance process as shown in FIG. Also good. In this case, the light shielding mask 30 is not disposed on the back surface of the substrate 21 but is disposed on the back surface of the anode 1 of the organic EL element 10. The subsequent usage of the light shielding mask 30 and the ultraviolet light irradiation method are the same as described above.

  When the high-resistance region is produced by the above method, the organic layer is subjected to high-resistance treatment until the organic EL element 10 is completed or until it is assembled into a final device form such as the organic EL device of FIG. There is no need. As described above, after the element is completed or after the device is completed, the organic layer can be easily subjected to a high resistance process in a separate process, so that the productivity is greatly improved.

  As described above, FIG. 9 shows the evaluation of light emission by producing a high resistance region step by step for each region of the organic layer 2 using four kinds of light shielding masks. The vertical axis in FIG. 9 is a region where the organic layer 2 is not covered by the light shielding mask 30 when the center of the light shielding mask 30 with the shorter width and the center of the anode 1 are combined. At this time, the width of the gap between the end of the power feeding portion 1a of the anode 1 and the end of the mask 30 is called a distance from the anode and is shown on the vertical axis. When the length between the feeding parts 1a of the anode 1 is L and the distance from the anode is expressed using L1 to L4 in FIG. 7, (L-L1) / 2, (L-L2) / 2, (L -L3) / 2 and (L-L4) / 2.

  Since an element having a light emitting region area of 130 mm × 130 mm is used, L = 130 mm. As can be seen from the above calculation formula, when the distance from the anode is 1 mm, the width of the light shielding mask is 128 mm. When the distance from the anode is 5 mm, the width of the light shielding mask is 120 mm. Next, when the distance from the anode is 10 mm, the horizontal width of the light shielding mask is 110 mm, and when the distance from the anode is 20 mm, the horizontal width of the light shielding mask is 90 mm.

Using the four types of masks as described above, the UV light is irradiated sequentially using the mask having the largest width (distance 1 mm from the anode in FIG. 9). The horizontal axis indicates the ultraviolet light irradiation amount, and the unit is J / cm ² . The amount of ultraviolet light irradiation is constant in the process of sequentially replacing the four types of light shielding masks. In order to investigate the dependency on the ultraviolet light irradiation amount, the irradiation amount was changed to 0, 1, 3, 6, 12 (J / cm ² ) to produce a high resistance region, and the light emitting state of the device after the production Was measured with a luminance meter.

  First, the luminance of the central portion (one location) of the light emitting region of the organic layer 2 and the portion (four locations) that entered 10 mm inside the light emitting region from the middle points of the four sides of the rectangular light emitting region were measured. The average of the brightness | luminance of 5 places measured at this time was computed, and the standard deviation by the brightness | luminance of the said 5 places was computed with respect to this brightness | luminance average, and it was set as evaluation. The measurement and evaluation described above were performed each time four types of light shielding masks having a distance from the anode of 1 mm to 20 mm were used. X in FIG. 9 indicates that a standard deviation of 16% or more occurs in the luminance distribution. Δ similarly indicates that the standard deviation of the luminance distribution is 11% or more and 15% or less. ○ similarly indicates that the standard deviation of the luminance distribution is 10% or less.

For example, when a mask having a distance of 5 mm from the anode is used, ultraviolet light is irradiated at 3 (J / cm ² ), and a current density of 10 (mA / cm ² ) is applied to the organic EL element, the emission region The luminance at the central location was 1900 (cd / m ² ), and the luminance at the other four locations was 2360, 2350, 2260, 2270 (cd / m ² ). The average luminance was 2228 (cd / m ² ), and the standard deviation of luminance was 8%. On the other hand, the brightness | luminance of five places was measured as mentioned above about the conventional element which does not perform ultraviolet light processing (it does not perform high resistance processing) with the same structure. The luminance at the center of the light emitting region was 1320 (cd / m ² ), and the luminance at the other four locations was 2470, 2650, 2530, 2580 (cd / m ² ). The average luminance was 2310 (cd / m ² ), and the standard deviation of luminance was 22%. Also from this result, the effect of the present invention is well understood.

  When the ultraviolet light irradiation amount is 0 (when no mask processing is performed), the standard deviation of the brightness is 16% or more when any of the four types of light shielding masks with a distance from the anode of 1 mm to 20 mm is used. Occur. When the ultraviolet light irradiation amount is 1, the standard deviation of the brightness is 15% or less when any of the four types of light shielding masks is used. When the amount of ultraviolet light irradiation is 3, there is one item where the standard deviation of luminance is 11% or more and 15% or less, but the standard deviation of luminance is less than 10% in other items. When the ultraviolet light irradiation amount is 6, there is one item with a standard deviation of luminance of 16% or more, one item with a standard deviation of luminance of 11% or more and 15% or less, and the other items are luminance. The standard deviation is less than 10%. When the dose is 12, there are three items with a standard deviation of luminance of 16% or more, and the uniformity is extremely poor.

From FIG. 9, if the ultraviolet light irradiation amount is 1 or 3 (J / cm ² ), for example, four types of light shielding masks with distances from the anode of 1 mm to 20 mm are not used. Even if one of them is used, it can be said that it is an allowable range as having uniform luminance distribution. If the ultraviolet light irradiation amount is 6 (J / cm ² ), all three types of masks with a distance from the anode of 1 mm to 10 mm may be used, or only one type may be used. Recognize.

  As described above, ultraviolet light is irradiated, and the resistance value is formed stepwise from higher to lower as the region of the organic layer 2 moves away from the side closer to the power supply portion of the light extraction side electrode. As a result, the values of the currents flowing through the respective regions can be made close to each other, and it is possible to prevent a difference in luminance distribution and the lifetime depending on the region of the organic layer.

  The organic layer 2 may not be configured as described above, but may be configured to be a blue single color, a green single color, or a red single color. In order to configure a single blue color, the organic layer 2 is, for example, α-NPD layer (film thickness 50 nm) / Alq in the order of hole transport layer / light emitting layer / electron transport layer / electron injection layer from the anode side. It can be set as the laminated body which laminated | stacked the layer (film thickness of 30 nm) / Alq layer (film thickness of 40 nm) / Liq layer (film thickness of 1 nm) which doped TBpe 10Wt% in order.

  In order to configure a green single color, a layer in which Alq is doped with 10 wt% TBpe is changed to a layer (film thickness: 30 nm) in which Alq is doped with 10 wt% of coumarin 6 in the blue-colored laminate. . In order to form a green single color, a layer in which Alq is doped with 10 wt% TBpe may be changed to a layer in which Alq is doped with 5 wt% DCM (thickness: 30 nm). In any of the above-described blue single color, green single color, and red single color, the anode 1 can be made of ITO and the cathode 3 can be made of Al (film thickness: 100 nm).

  The organic layer 2 may have a structure in which three units of blue, green, and red are laminated. For example, the anode is ITO, α-NPD layer (film thickness 50 nm) / Alq layer doped with TBpe 10 wt% (film thickness 30 nm) / Alq layer (film thickness 40 nm) / Liq layer (film thickness 1 nm) / Al layer (Thickness 1 nm) / α-NPD layer (thickness 50 nm) / Alq doped layer 10% by weight of coumarin 6 (thickness 30 nm) / Alq (thickness 40 nm) / Liq layer (thickness 1 nm) / Al layer ( 1 nm thick) / α-NPD layer (50 nm thick film) / Alq layer doped with 5 wt% of DCM (film thickness 30 nm) / Alq layer (film thickness 40 nm) / Liq layer (film thickness 1 nm) be able to. The cathode is composed of an Al layer (film thickness 100 nm).

  Further, the organic layer 2 may have a structure in which blue and red are put in the same light emitting layer. For example, the anode is ITO, α-NPD (film thickness 50 nm) / Alq is a 10 W% doped layer of TBpe (film thickness 15 nm) / Alq is doped with 5 W% DCM (film thickness 15 nm) / Alq (film thickness 40 nm) ) / Liq (film thickness: 1 nm). The cathode is composed of an Al layer (film thickness 100 nm).

  As described above, in the examples, the organic EL element of the present invention has been described with typical material configurations, but the present invention is not limited to these and can be applied to any other organic EL element. The present invention includes various embodiments not described herein.

  The configuration of the organic EL element of the present invention can be widely applied to optical devices such as light emitting devices and lighting devices.

DESCRIPTION OF SYMBOLS 1 Anode 1a Feed part 1b Electrode area 2 Organic layer 3 Cathode 3a Feed part 3b Electrode area 4 Insulating film 10 Organic EL element 10a High resistance area 21 Substrate 22 Sealing can 23 Desiccant 30 Light shielding mask

Claims (5)

A first electrode;
A second electrode having a higher volume resistivity than the first electrode;
An organic layer sandwiched between the first electrode and the second electrode;
A power supply unit provided to supply power to one side of the second electrode,
The organic layer is irradiated with ultraviolet light so that the resistance value of the organic layer region in the vicinity of the power feeding unit is higher than the resistance value of the organic layer located farther than the organic layer region. EL element.   The power feeding portion is provided on each of two opposing sides of the second electrode, and the resistance value of the organic layer is stepped from the organic layer in the vicinity of the power feeding portion to the organic layer located in the middle of the two opposing sides. The organic EL device according to claim 1, wherein the organic EL device is configured to be small. A first electrode; a second electrode having a higher volume resistivity than the first electrode; and a light extraction side; an organic layer sandwiched between the first electrode and the second electrode; A power supply unit provided to supply power to one side of the electrode,
A first step of covering the back surface of the second electrode with a light shielding mask that blocks ultraviolet light so that the organic layer region in the vicinity of the power feeding portion of the second electrode is not hidden when viewed from the back surface of the second electrode; A method for producing an organic EL element, comprising: a second step of irradiating ultraviolet light from the rear of the light shielding mask toward the light shielding mask and the second electrode after the first step.   4. The method of manufacturing an organic EL element according to claim 3, wherein the first step is performed after the organic EL element is incorporated in a housing and configured as an organic EL device.   The plurality of light shielding masks having different sizes are prepared, and the first step and the second step are repeated for each of the light shielding masks having different sizes. 2. A method for producing an organic EL device according to item 1.

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