JP5165017B2 - 電子機器の冷却構造 - Google Patents
電子機器の冷却構造 Download PDFInfo
- Publication number
- JP5165017B2 JP5165017B2 JP2010061782A JP2010061782A JP5165017B2 JP 5165017 B2 JP5165017 B2 JP 5165017B2 JP 2010061782 A JP2010061782 A JP 2010061782A JP 2010061782 A JP2010061782 A JP 2010061782A JP 5165017 B2 JP5165017 B2 JP 5165017B2
- Authority
- JP
- Japan
- Prior art keywords
- heat
- cooling structure
- cooling
- cpu
- electronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20509—Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
Claims (8)
- 同一形状の複数の発熱部品を第1の熱伝導部材を介して1つの熱拡散板に接続した冷却構造体を同一基板上に複数備え、前記複数の冷却構造体の各熱拡散板を第2の熱伝導部材を介して一つの放熱体に接続した電子機器の冷却構造であって、前記第1及び第2の熱伝導部材は弾性を有し、少なくとも2つの冷却構造体に含まれる発熱部品の高さが異なっている電子機器の冷却構造。
- 前記放熱体の内部に平板型ヒートパイプを用いた請求項1記載の電子機器の冷却構造。
- 各冷却構造体と前記放熱板体との間に設けられた各第2の熱伝導材は、各冷却構造体の高さ寸法の最大公差値よりも厚い請求項1記載の電子機器の冷却構造。
- 各冷却構造体の第1の熱伝導材は、各冷却構造体と前記放熱板体との間に設けられた各第2の熱伝導材より薄い請求項1記載の電子機器の冷却構造。
- 前記複数の冷却構造体の1つがCPUを含んだ冷却構造体である場合、前記CPUを含んだ冷却構造体以外の冷却構造体と前記放熱板体との間に設けられた第2の熱伝導部材は、前記CPUを含んだ冷却構造体の高さ寸法の最大公差よりも厚い請求項1記載の電子機器の冷却構造。
- 前記CPUを含んだ冷却構造体以外の冷却構造体の第1の熱伝導材は前記第2の熱伝導材より薄い請求項5記載の電子機器の冷却構造。
- 前記第1及び第2の熱伝導部材は荷重0.3[MPa]時の圧縮率が30%以上である請求項1記載の電子機器の冷却構造。
- 前記高さの異なる発熱部品はCPUと該CPUに電力を供給するための電源部品である請求項1記載の電子機器の冷却構造。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010061782A JP5165017B2 (ja) | 2010-03-18 | 2010-03-18 | 電子機器の冷却構造 |
US12/960,962 US8564957B2 (en) | 2010-03-18 | 2010-12-06 | Cooling structure for electronic equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010061782A JP5165017B2 (ja) | 2010-03-18 | 2010-03-18 | 電子機器の冷却構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011198868A JP2011198868A (ja) | 2011-10-06 |
JP5165017B2 true JP5165017B2 (ja) | 2013-03-21 |
Family
ID=44647105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010061782A Expired - Fee Related JP5165017B2 (ja) | 2010-03-18 | 2010-03-18 | 電子機器の冷却構造 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8564957B2 (ja) |
JP (1) | JP5165017B2 (ja) |
Families Citing this family (23)
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US8841820B2 (en) | 2011-07-21 | 2014-09-23 | Lockheed Martin Corporation | Synthetic jet apparatus |
US8780561B2 (en) * | 2012-03-30 | 2014-07-15 | Raytheon Company | Conduction cooling of multi-channel flip chip based panel array circuits |
DE202012008739U1 (de) * | 2012-09-12 | 2013-12-16 | Abb Technology Ag | Kühlkreislauf mit ausreichend knapp bemessenem Wärmetauscher |
US20140239479A1 (en) * | 2013-02-26 | 2014-08-28 | Paul R Start | Microelectronic package including an encapsulated heat spreader |
DE202013002411U1 (de) * | 2013-03-12 | 2013-06-27 | Congatec Ag | Wärmeverteiler mit Flachrohrkühlelement |
US9576930B2 (en) * | 2013-11-08 | 2017-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermally conductive structure for heat dissipation in semiconductor packages |
KR20190055662A (ko) * | 2017-11-15 | 2019-05-23 | 에스케이하이닉스 주식회사 | 열 재분배 패턴을 포함하는 반도체 패키지 |
KR102607055B1 (ko) * | 2018-05-11 | 2023-11-30 | 삼성전자주식회사 | 반도체 패키지 시스템 |
US10991638B2 (en) * | 2018-05-14 | 2021-04-27 | Samsung Electronics Co., Ltd. | Semiconductor package system |
CN111651020A (zh) * | 2018-05-24 | 2020-09-11 | 华为技术有限公司 | 散热装置及其制造方法、服务器 |
WO2020022243A1 (ja) * | 2018-07-27 | 2020-01-30 | 日本精機株式会社 | 表示装置 |
JP7251951B2 (ja) * | 2018-11-13 | 2023-04-04 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
US11830787B2 (en) | 2019-08-06 | 2023-11-28 | Intel Corporation | Thermal management in integrated circuit packages |
US20210043573A1 (en) * | 2019-08-06 | 2021-02-11 | Intel Corporation | Thermal management in integrated circuit packages |
US12007170B2 (en) | 2019-08-06 | 2024-06-11 | Intel Corporation | Thermal management in integrated circuit packages |
US11784108B2 (en) | 2019-08-06 | 2023-10-10 | Intel Corporation | Thermal management in integrated circuit packages |
US11037857B1 (en) * | 2019-12-12 | 2021-06-15 | Amulaire Thermal Technology, Inc. | IGBT module with heat dissipation structure having copper layers of different thicknesses |
US11769710B2 (en) * | 2020-03-27 | 2023-09-26 | Xilinx, Inc. | Heterogeneous integration module comprising thermal management apparatus |
US11791240B2 (en) * | 2020-12-28 | 2023-10-17 | Baidu Usa Llc | High performance baseboard cooling architecture |
US11469154B2 (en) * | 2021-01-17 | 2022-10-11 | Amulaire Thermal Technology, Inc. | IGBT module with heat dissipation structure having specific layer thickness ratio |
BE1029924B1 (de) * | 2021-11-15 | 2023-06-12 | Phoenix Contact Gmbh & Co | Wärmebrücke zum wärmeleitenden Transport von Wärme |
TW202327433A (zh) * | 2021-12-28 | 2023-07-01 | 十銓科技股份有限公司 | 均溫散熱裝置之結構 |
JP2023111629A (ja) * | 2022-01-31 | 2023-08-10 | パナソニックIpマネジメント株式会社 | 電気機器 |
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-
2010
- 2010-03-18 JP JP2010061782A patent/JP5165017B2/ja not_active Expired - Fee Related
- 2010-12-06 US US12/960,962 patent/US8564957B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20110228485A1 (en) | 2011-09-22 |
US8564957B2 (en) | 2013-10-22 |
JP2011198868A (ja) | 2011-10-06 |
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