JP5146160B2 - Elastic wave resonator and ladder type filter - Google Patents

Description

  The present invention relates to an acoustic wave resonator used in, for example, a band-pass filter of a mobile phone and a ladder type filter using the acoustic wave resonator. The present invention relates to an elastic wave resonator and a ladder type filter.

  2. Description of the Related Art Conventionally, an acoustic wave filter device configured using an acoustic wave resonator has been widely used for a band filter of a cellular phone or the like.

  For example, Patent Document 1 below discloses an IDT (interdigital transducer) used in this type of acoustic wave filter device. FIG. 9 is a schematic configuration diagram of an IDT described in Patent Document 1 as being conventionally used.

  The IDT 1001 is configured by forming the illustrated IDT electrode 1002 on a piezoelectric substrate. The IDT electrode 1002 has first and second bus bars 1003 and 1004 facing each other. A plurality of first electrode fingers 1005 are formed so as to extend from the first bus bar 1003 to the second bus bar 1004 side. A plurality of second electrode fingers 1006 are formed from the second bus bar 1004 so as to extend to the first bus bar 1003 side.

In the IDT electrode 1002, a surface acoustic wave is excited by applying an alternating voltage between the first electrode finger 1005 and the second electrode finger 1006. A portion where the surface acoustic wave is excited, that is, the excitation portion 1007 is a portion having a width indicated by an arrow W in FIG. In the excitation unit, the surface acoustic wave propagates in a direction orthogonal to the extending direction of the first and second electrode fingers 1005 and 1006. In the IDT electrode 1002, the sound velocity of the surface acoustic wave propagating through the excitation unit 1007 is made slower than the sound velocity of the elastic wave propagating through the first and second bus bars 1003 and 1004. Therefore, it is described that the excited surface acoustic wave is confined in the excitation unit 1007.
Japanese Patent Laid-Open No. 10-145173

  As described in Patent Document 1, in the conventional IDT electrode 1002, surface acoustic waves are confined in the excitation unit 1007, and leakage of surface acoustic waves to the first and second bus bars 1003 and 1004 is extremely reduced. ing.

  However, when cross width weighting is applied to the IDT electrode, weighting is applied so that a rhombus shape is formed by the envelope on the first bus bar side and the envelope on the second bus bar side. It is found that the elastic wave leaks to the bus bar and the resonance characteristics and the filter characteristics may be deteriorated.

  The object of the present invention is to solve the above-described conventional state of the art, and even if the IDT electrode is subjected to various forms of cross width weighting, the elastic wave is less likely to leak to the bus bar, and therefore has good resonance. An object is to provide an elastic wave resonator having characteristics and a ladder filter using the elastic wave resonator.

  An elastic wave resonator according to the present invention is an elastic wave resonator including a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate, wherein the IDT electrode includes a first bus bar and a first bus bar. And a plurality of first electrode fingers extending from the first bus bar toward the second bus bar but not to reach the second bus bar. And extending from the second bus bar toward the first bus bar, but not so as to reach the first bus bar, and are arranged so as to be inserted into the first electrode fingers. Second electrode fingers, and the first and second bus bars respectively extend outward from the ends of the plurality of first electrode fingers or the ends of the plurality of second electrode fingers. A plurality of extended first and second electrode finger extensions and a plurality of first and second electrodes The electrode finger extension covering portion covering the electrode finger extension and the plurality of first and second electrode finger extensions are extended outward in a direction perpendicular to the elastic wave propagation direction, and A metal film having an electrode finger extension non-covering portion that does not cover the first and second electrode finger extensions, and the inner edge of the metal film constitutes the inner edge of the bus bar, When the average density of the first and second electrode finger extensions is ρ1, the film thickness is H1, the average density of the metal film is ρ2, and the film thickness is H2, ρ1 × H1 is greater than ρ2 × H2. Is also made larger.

  In a specific aspect of the elastic wave resonator according to the present invention, the IDT electrode has a crossing width so that the electrode finger crossing width decreases from the portion where the electrode finger crossing width is maximum toward both sides of the elastic wave propagation direction. Weighted so that the inner edge of the second bus bar is positioned at a certain distance from the first envelope formed by connecting the tips of the plurality of first electrode fingers. And the inner edge of the first bus bar is located at a certain distance from the second envelope formed by connecting the tips of the plurality of second electrode fingers. The inner edge of the first and second bus bars has an inclined portion that is inclined with respect to the elastic wave propagation direction. Even if the inner end edges of the first and second bus bars have the inclined portion, according to the present invention, the elastic wave can be surely confined in the excitation portion. The elastic wave leakage to the bus bar side can be reliably suppressed.

  In another specific aspect of the acoustic wave resonator according to the present invention, the metal constituting the plurality of first and second electrode finger extension portions is Al or an alloy mainly composed of Al. In this case, since the electrode finger extension non-covering portion is formed of Al having a high sound velocity or an alloy mainly composed of Al, the elastic wave can be reliably confined in the excitation portion according to the present invention.

  In still another specific aspect of the acoustic wave resonator according to the present invention, the first and second electrode fingers are laminated on the piezoelectric substrate side of the Al film and the Al film and have a density higher than that of the Al film. Mainly an electrode film made of a large high-density metal. In this case, confinement of elastic waves can be further increased.

  In still another specific aspect of the acoustic wave resonator according to the present invention, when the metal film of the first and second bus bars is a first metal film, the first metal film is laminated on the upper surface of the first metal film. A second metal film formed, and an inner edge of the second metal film is located outside an outer edge of the electrode finger extension portion, whereby the first metal film The electrode finger extension non-covering portion is located between the electrode finger extension and the inner edge of the second metal film. In this case, the electrode finger extension covering portion is provided between the electrode finger extension and the inner edge of the second metal film, and the elastic wave is reliably excited by the electrode finger extension non-covering portion. Leakage to the outside can be suppressed, and on the other hand, a metal having low conductivity can be appropriately used as the metal constituting the first metal film, and the wiring resistance can be lowered.

  In still another specific aspect of the acoustic wave resonator according to the present invention, when the average conductivity of the first metal film is σ2, and the average conductivity of the second metal film is σ3 and the film thickness H3, σ2 × H2 <σ3 × H3. In this case, the resistance of the bus bar and the wiring can be reduced. Thereby, the electrical characteristics of the acoustic wave resonator can be improved.

  The ladder filter according to the present invention includes an elastic wave resonator configured according to the present invention, as a series arm resonator or a parallel arm resonator. Accordingly, since the series arm resonator or the parallel arm resonator including the elastic wave resonator is provided, the filter characteristics can be improved.

  In the acoustic wave resonator according to the present invention, the first and second bus bars do not cover the first and second electrode finger extension portions and the first or second electrode finger extension portions. Since ρ1 × H1 is larger than ρ2 × H2, the elastic wave can be surely confined inside the electrode finger extension non-covered portion, and elastic wave resonance is achieved. The electrical characteristics of the child can be improved.

  Therefore, when a filter device such as a ladder filter is configured using the acoustic wave resonator according to the present invention, the filter characteristics can be improved.

  Hereinafter, the present invention will be clarified by describing specific embodiments of the present invention with reference to the drawings.

  FIG. 1A is a schematic plan view of a ladder type filter device provided with an acoustic wave resonator according to an embodiment of the present invention as a series arm resonator and a parallel arm resonator, and FIG. It is front sectional drawing which shows the principal part of a resonator. FIG. 2 is a circuit diagram of a duplexer including the ladder type filter.

  A ladder type filter device 1 shown in FIG. 1A is configured by forming the illustrated electrode structure on a piezoelectric substrate 2.

  The ladder filter device 1 is used as a transmission side band filter in the duplexer 3 shown in FIG.

  In this embodiment, the ladder filter device 1 is used as a transmission side band filter of a duplexer of a band 8 type mobile phone having a transmission band of 880 MHz to 915 MHz and a reception band of 925 MHz to 960 MHz. .

  As shown in FIG. 2, the duplexer 3 has an antenna terminal 4 connected to the antenna of the mobile phone. One end of a ladder filter device 1 is connected to the antenna terminal 4 as a transmission side band filter. The other end of the ladder type filter device 1 is a transmission terminal 5.

  On the other hand, in the duplexer 3, a reception side band filter 6 is connected to the antenna terminal 4. The reception-side band filter 6 is a band filter having a balanced-unbalanced conversion function, and has first and second balanced terminals 8 and 9. In the reception-side band filter 6, first and second elastic wave filter units 14 and 15 are connected to a connection point 11 on the antenna terminal 4 side via elastic wave resonators 12 and 13, respectively. The first and second elastic wave filter units 14 and 15 are 3IDT type elastic wave filters each having a balance-unbalance conversion function. 3IDT type third and fourth elastic wave filters 16 and 17 are cascaded in the subsequent stage of the first and second elastic wave filter sections 14 and 15, respectively.

  On the other hand, the ladder filter device 1 constituting the transmission side filter has a series arm extending between the antenna terminal 4 and the transmission terminal 5, and in the series arm, a plurality of series arm resonators S1 to S8 are provided. They are connected in series with each other. The first parallel arm resonator P1 is provided on the first parallel arm that connects the connection point between the series arm resonator S2 and the series arm resonator S3 and the ground potential. The second parallel arm resonator P2 is provided on the second parallel arm that connects the connection point between the series arm resonator S4 and the series arm resonator S5 and the ground potential. A third parallel arm resonator P3 is provided on the parallel arm that connects the connection point between the connection point of the series arm resonator S6 and the series arm resonator S7 and the ground potential. A capacitance C is connected in parallel to the series arm resonators S3 and S4. In each parallel arm, inductances L1 to L3 are connected in series to the parallel arm resonators P1 to P3, respectively. The ground side ends of the inductances L1 and L2 are connected in common and connected to the ground potential via the inductance L4.

  In FIG. 1A, the series arm resonators S1 to S8 and the parallel arm resonators P1 to P3, and the comb electrode 18 constituting the capacitance C are illustrated. The inductances L1 to L4 are inductance portions formed by wiring patterns.

  The feature of this embodiment is that the structure of the bus bar of the IDT electrode of the series arm resonators S1 to S8 and the parallel arm resonators P1 to P3 is improved. This will be described with reference to FIG. 1B and FIGS. 3 to 5 on behalf of the series arm resonator S1.

  FIG. 5 is a plan view showing the series arm resonator S1. The series arm resonator S1 includes first and second bus bars 21 and 22 that face each other. A plurality of first electrode fingers 23 are formed from the first bus bar 21 toward the second bus bar 22 so as not to reach the second bus bar 22. A plurality of second electrode fingers 24 are extended from the second bus bar 22 toward the first bus bar 21, but not so as to reach the first bus bar 21. The plurality of first electrode fingers 23 and the plurality of second electrode fingers 24 are interleaved with each other.

  Although not particularly essential, a first dummy electrode finger 25 extending from the second bus bar 22 toward the first bus bar 21 is formed at the tip of the first electrode finger 23 with a gap therebetween. ing. Similarly, a second dummy electrode finger 26 is formed extending from the first bus bar 21 toward the second bus bar 22 with a gap from the tip of the second electrode finger 24.

The first and second electrode fingers 23 and 24, the first and second dummy electrode fingers 25 and 26, and the bus bars 21 and 22 are all made of a metal material. Formed. First, an insulating film made of an insulating material such as SiO ₂ is formed on the entire surface of the piezoelectric substrate 2 with the same thickness as the first and second electrode fingers 23 and 24. Thereafter, patterning is performed by a photolithography method, and first and second electrode fingers 23 and 24, first and second dummy electrode fingers 25 and 26, electrode finger extension portions and dummy electrode finger extension portions described later are provided. The insulating film is patterned so that the portion becomes an opening. Thereafter, a metal material is applied to the entire surface of the dielectric film by vapor deposition or sputtering, and the unnecessary metal film on the insulating film is removed together with the resist.

  In this way, as shown in FIG. 3, the first and second electrode fingers 23 and 24 and the first and second dummy electrode fingers 25 and 26 having the same thickness as the insulating film 27 are formed. Here, electrode finger extension portions 23 a and 24 a are connected to the base end sides of the first and second electrode fingers 23 and 24. The first and second dummy electrode finger extensions 25 a and 26 a are also connected to the proximal end sides of the first and second dummy electrode fingers 25 and 26.

  Thereafter, as shown in FIG. 4, first metal films 28 and 29 are formed. The first metal films 28 and 29 have inner end edges 28 a and 29 a forming inner end edges of the first and second bus bars 21 and 22.

  The “inner side” means excitation in which the first and second electrode fingers 23 and 24 intersect in the direction orthogonal to the elastic wave propagation direction, that is, the direction in which the first and second electrode fingers 23 and 24 extend. The “outside” means a direction away from the excitation unit in a direction orthogonal to the elastic wave propagation direction.

  Next, by forming second metal films 30 and 31 on the first metal films 28 and 29, the electrode structure shown in FIG. 5 is formed. The inner end edges 30a and 31a of the second metal films 30 and 31 are located outside the inner end edges 28a and 29a of the first metal films 28 and 29.

  By the way, the first electrode finger extension 23 a and the second dummy electrode finger extension 26 a are portions covered with the metal film 28. In other words, the excitation part side, that is, the inner part of the metal film 28 from the inner edge 28a is the first electrode finger 23 and the second dummy electrode finger 26, and the part covered by the metal film 28 is the first part. An electrode finger extension 23a and a second dummy electrode finger extension 26a.

  The bus bar is a portion where a plurality of electrode fingers connected to the same potential are short-circuited. According to this definition, in the bus bar 21, since the plurality of first electrode fingers 23 are electrically connected by the metal film 28, the inner edge 28 a of the metal film 28 corresponds to the inner edge of the bus bar 21. Will be. Therefore, the first electrode finger 23 and the first electrode finger extension 23 a located below the metal film 28 are distinguished in this way, and the electrode finger extension 23 a is not included in the electrode finger 23. To do.

  Similarly, also on the second bus bar 22 side, the inner edge 29a of the metal film 29 is a boundary that partitions the second electrode finger 24 and the second electrode finger extension, and the first dummy electrode This is a boundary that partitions the finger 25 and the first dummy electrode finger extension 25a.

  FIG. 1B shows a partially enlarged portion where the first bus bar 21 and the first electrode finger 23 are formed. Here, on the piezoelectric substrate 2, the 1st electrode finger 23 and the 1st electrode finger extension part 23a are connected. The metal film 28 is formed on the first electrode finger extension 23a so as to cover the first electrode finger extension 23a. The metal film 28 extends further outward from the first electrode finger extension 23a. A second metal film 30 is formed on the first metal film 28. The first metal film 28 includes an electrode finger extension covering portion 28b that covers the first electrode finger extension 23a, and a first electrode finger extension that does not cover the first electrode finger extension 23a. And an uncovered portion 28c. That is, the first electrode finger extension non-covering portion 28c is provided between the inner edge 30a of the second metal film 30 and the first electrode finger extension 23a.

  Although not essential, in this embodiment, the insulating film 32 is formed below the metal film 28 except for the portion where the first electrode finger extension 23a is present. Therefore, the surface on which the second metal film 30 is formed and the upper surface of the metal film 28 are planarized. Therefore, the second metal film 30 can be easily and accurately formed.

  In addition, reflectors 33 and 34 are provided on both sides of the IDT electrode in the elastic wave propagation direction, thereby forming a one-port type elastic wave resonator in this embodiment.

  In addition, although the electrode structure was demonstrated about series arm resonator S1, other series arm resonators S2-S8 and parallel arm resonators P1-P3 also have the same structure.

  In the present embodiment, the IDT electrode of the series arm resonator S1 is subjected to cross width weighting. That is, in the IDT electrode, the first envelope A connecting the tips of the plurality of first electrode fingers 23 and the second envelope connecting the tips of the plurality of second electrode fingers 24 form a rhombus. Cross width weighting is applied as shown. In other words, the IDT electrodes are weighted so that the cross width gradually decreases from the portion with the largest cross width weighting toward the end portion in the elastic wave propagation direction. The inner edges of the bus bars 21 and 22, that is, the inner edges 28 a and 29 a of the first metal films 28 and 29 are shaped so as to follow the envelope B or the envelope A. Accordingly, the inner end edges 28a and 29a respectively have inclined portions C and D that are inclined inward toward the elastic wave propagation direction end. In other words, the inner edges 28a and 29a have inclined portions C and D that are inclined so as to have a substantially constant distance from the envelope B or the envelope A. In such a structure, since the width of the excitation portion changes in the elastic wave propagation direction, there is a portion where the excited elastic wave reaches the bus bar 21 or 22. For example, an elastic wave excited near both ends in a direction orthogonal to the elastic wave propagation direction in the maximum crossing width portion reaches the bus bar 21 or the bus bar 22 when traveling in the elastic wave propagation direction. Therefore, there exists a problem that the elastic wave excited by the excitation part tends to leak to the bus bar side.

  The feature of this embodiment is that when the average density of the electrode finger extension portions 23a and 24a is ρ1, the film thickness is H1, the average density of the first metal films 28 and 29 is ρ2, and the film thickness H2 is ρ1. XH1 is larger than ρ2xH2. In such a configuration, the acoustic velocity of the excited elastic wave is higher in the electrode finger extension non-covering portion 28c where only the metal film 28 exists than in the region where the first electrode finger extension 23a is provided. Relatively fast. Therefore, the elastic wave excited by the IDT electrode is confined inside the inner edge of the electrode finger extension non-covering portion 28c of the bus bar 21, and leakage of the elastic wave to the outside can be reliably suppressed. . Thereby, in the series arm resonator S1, the resonance characteristic is improved.

  Since the other series arm resonators S2 to S8 and the parallel arm resonators P1 to P3 have the same structure, the ladder-type filter device 1 of the present embodiment can improve the filter characteristics. This will be described more specifically with reference to FIGS.

  Further, since the cross width weighting as described above is applied, a desired resonance characteristic can be easily obtained. In other words, it is possible to adjust the frequency characteristics of the acoustic wave resonator over a wide range by devising the correspondence of weighting.

6 and 7 show impedance characteristics and return loss of an acoustic wave resonator of a comparative example prepared for comparison and impedance characteristics of the acoustic wave resonator as the series arm resonator S1 according to an embodiment of the present invention. It is a figure which shows a characteristic, respectively. A solid line shows the result of the embodiment, and a broken line shows the result of the comparative example. The used piezoelectric substrate 2 is a LiNbO ₃ substrate having a cut angle of 126 °. In the above embodiment, the number of pairs of electrode fingers of the IDT is 88 pairs, the crossover width at the center is 80 μm, the crossover width decreases toward both ends, and the crossover width at both ends is 8 μm. The wavelength λ determined by the electrode finger pitch in the IDT electrode was 4 μm, and the duty of the IDT electrode was 0.5. Further, the size of the gap between the tips of the first and second electrode fingers 23 and 24 and the first and second dummy electrode fingers 25 and 26 was set to 0.4 μm. In the center of the IDT electrode, the length as a dummy electrode is 0, that is, no dummy electrode is disposed.

  The lengths of the first and second dummy electrode fingers at both ends of the IDT electrode were set to 7.4 μm when the number of dummy electrode fingers was 17.

  The number of electrode fingers in the first and second reflectors is the same as the number of dummy electrode fingers. The opening length of the electrode fingers in the reflectors 33 and 34 is the same as the opening length (= cross width + 2 × dummy electrode finger length) at the end of the IDT electrode.

  The wavelength λ determined by the pitch of the electrode fingers of the reflector is the same as the wavelength λ of the IDT electrode, and the duty of the electrode fingers is 0.5.

Further, as the insulating film disposed between the electrode fingers, a 200 nm thick SiO ₂ film was formed.

  The first and second electrode fingers 23 and 24, the first and second dummy electrode fingers 25 and 26, the electrode finger extension portion and the dummy electrode finger extension portion are Ti / Al / Ti / Pt / NiCr in order from the upper layer. Were laminated in this order, and a laminated film having a thickness of 10/80/10/80/10 (unit: nm) was used. In addition, the first metal films 28 and 29 were formed of a laminated metal film in which Ti / Al / Ti was laminated from the upper layer so as to have a thickness of 10/100/10 (unit: nm). For the second metal films 30 and 31, a laminated metal film was used in which Al / Ti was laminated from the upper layer to 2000/200 (unit: nm).

  The length of the first and second electrode finger extension uncovered portions 28c and 29c in the direction orthogonal to the surface wave propagation direction was 1λ, that is, 4 μm.

Further, as shown in FIG. 1B, a 1000 nm SiO ₂ film and a 50 nm thick SiN film were sequentially formed as a protective film.

  In the elastic wave resonator of the comparative example, the first metal film is not formed on the first electrode finger extension portion and the second electrode finger extension portion without providing the electrode finger extension non-covering portion shown in FIG. A second metal film 30 and a second metal film 31 were further formed on the portions where the 28 and the first metal film 29 were laminated. In other words, the first and second bus bars have a structure in which the second metal film is laminated in the entire region where the metal film is laminated on the first and second electrode finger extension portions.

  As is apparent from FIG. 6, according to the embodiment, the ratio of the valleys and valleys is larger than that of the elastic wave resonator of the comparative example. Further, as is apparent from the return loss characteristics of FIG. 7, it can be seen that the return loss can be significantly improved in the vicinity of 910 MHz and in the vicinity of 950 MHz according to the above embodiment as compared with the comparative example.

  Further, the elastic wave resonators of the above-described embodiments are employed in the series arm resonators S1 to S8 of the ladder filter device 1, and parallel arm resonators P1 to P3 having the same structure but different resonance characteristics are used. The frequency characteristic of the ladder type filter device 1 is shown by a solid line in FIG. For comparison, frequency characteristics of a ladder type filter device configured in the same manner using the elastic wave resonator of the comparative example are shown by broken lines in FIG.

  As can be seen from FIG. 8, the insertion loss at the right shoulder of the passband is improved by 0.09 dB by using the elastic wave resonator of the above embodiment.

  In the said embodiment, the 1st electrode finger 23 and the 1st electrode finger extension part 23a are integrally formed with the same metal material. The second electrode finger 24 and the second electrode finger extension 24a are also integrally formed of the same metal material. Furthermore, the first and second dummy electrode fingers 25 and 26 and the first and second dummy electrode finger extensions 25a and 26a are also integrally formed of the same metal material. The metal material for forming such electrode fingers 23 and 24 and dummy electrode fingers 25 and 26 is not particularly limited, and Al, Cu, Ag, or an alloy thereof can be appropriately used.

  However, since it is inexpensive and the acoustic velocity of elastic waves is high, it is desirable to use Al or an alloy mainly composed of Al. The first and second electrode fingers 23 and 24 may be formed of a laminated metal film in which a plurality of metal films are laminated. In this case, the first and second electrode fingers 23 and 24 are preferably made of an Al film and a high-density metal that is laminated on the piezoelectric substrate side of the Al film and has a higher density than Al. It is preferable to use a metal film as a main component. Thereby, the confinement effect of the elastic wave can be further enhanced. Examples of the high-density metal having a higher density than Al include Cu, W, Au, and Pt.

  Further, as the first metal films 28 and 29, an appropriate metal having a lower density than the first electrode finger extension 23 and the second electrode finger extension 24a, for example, Al, AlCu alloy, or the like can be used. . The first metal films 28 and 29 may also be formed of a stacked metal film formed by stacking a plurality of metal films. In any case, as long as ρ1 × H1 is larger than ρ2 × H2, the metal films 28 and 29 can be formed from an appropriate metal.

  The second metal films 30 and 31 can also be formed of an appropriate metal such as Al, an Al alloy, or Au. The second metal films 30 and 31 may also be formed of a stacked metal film formed by stacking a plurality of metal films.

  A thin layer of Ti or NiCr alloy may be further laminated on the first and second metal films.

  In the above embodiment, the serial arm resonator of the ladder type filter device uses the elastic wave resonator of the embodiment of the present invention as the parallel arm resonator, but the series arm resonator and the parallel arm resonator of the ladder type filter device have the same structure. By using the elastic wave resonator of the present invention for at least one of at least one, the filter characteristics can be improved.

  Further, the elastic wave resonator of the present invention can be suitably used for various elastic wave filter devices configured using one or more elastic wave resonators, not limited to the ladder type filter.

  The elastic wave resonator to which the present invention is applied is not limited to a surface acoustic wave resonator using a surface acoustic wave, but may be a boundary acoustic wave resonator using a boundary acoustic wave.

(A) is a typical top view for demonstrating the electrode structure of the ladder type filter apparatus of one Embodiment of this invention, (b) is front sectional drawing which shows the principal part. 1 is a circuit diagram of a duplexer in which a ladder filter device according to an embodiment of the present invention is used as a transmission side band filter. FIG. It is a schematic plan view for demonstrating the electrode formation process of the elastic wave resonator of this invention. It is a schematic plan view for demonstrating the electrode formation process of the elastic wave resonator of this invention. It is a top view which expands and shows the electrode structure of the elastic wave resonator of one Embodiment of this invention. It is a figure which shows the impedance characteristic of the elastic wave resonator of embodiment and a comparative example. It is a figure which shows the return loss characteristic of the elastic wave resonator of embodiment and a comparative example. It is a figure which shows each frequency characteristic of the ladder type filter apparatus comprised using the elastic wave resonator of embodiment and a comparative example. It is a typical top view for demonstrating the conventional surface acoustic wave apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Ladder type filter apparatus 2 ... Piezoelectric substrate 3 ... Duplexer 4 ... Antenna terminal 5 ... Transmission terminal 6, 7 ... Reception side band filter 8, 9 ... 2nd balanced terminal 11 ... Connection point 12, 13 ... Elastic wave resonator DESCRIPTION OF SYMBOLS 14, 15 ... 1st, 2nd elastic wave filter part 16, 17 ... 3rd, 4th elastic wave filter 18 ... Comb electrode 21, 22 ... 1st, 2nd bus bar 23, 24 ... 1st, 2nd electrode finger 23a, 24a ... 1st, 2nd electrode finger extension part 25, 26 ... 1st, 2nd dummy electrode finger 25a, 26a ... 1st, 2nd dummy electrode finger extension part 27 ... Insulation Films 28, 29 ... 1st metal film 28a, 29a ... Inner edge 28b ... Electrode finger extension covering part 28c ... Electrode finger extension non-covering part 30, 31 ... Second metal film 30a, 31a ... Inner edge 32 ... Insulating film 33, 34 ... Reflector L1-L4 ... In Inductance P1~P3 ... the parallel arm resonators S1~S8 ... series arm resonator

Claims (7)

A piezoelectric substrate;
An acoustic wave resonator comprising an IDT electrode provided on the piezoelectric substrate,
The IDT electrode is directed to the first bus bar, the second bus bar arranged so as to face the first bus bar, and from the first bus bar to the second bus bar, but not to the second bus bar. A plurality of first electrode fingers extended so as not to extend from the second bus bar toward the first bus bar, but not so as to reach the first bus bar, and A plurality of second electrode fingers arranged so as to interleave with one electrode finger;
The first and second bus bars are respectively extended to the outside from the ends of the plurality of first electrode fingers or the ends of the plurality of second electrode fingers. Electrode finger extension, electrode finger extension covering portion covering a plurality of first and second electrode finger extension portions, and elastic wave propagation from a plurality of first and second electrode finger extension portions A metal film that extends outward in a direction orthogonal to the direction and has an electrode finger extension non-covering portion that does not cover the first and second electrode finger extension portions. The inner edge constitutes the inner edge of the bus bar,
When the average density of the first and second electrode finger extensions is ρ1, the film thickness is H1, the average density of the metal film is ρ2, and the film thickness is H2, ρ1 × H1 is greater than ρ2 × H2. An elastic wave resonator characterized by being large.   The IDT electrode is weighted so that the electrode finger cross width decreases from the portion where the electrode finger cross width is maximum to both sides of the elastic wave propagation direction. Connect the tips of the plurality of second electrode fingers so that the inner edge of the second bus bar is located at a certain distance from the first envelope formed by connecting the tips. The inner edges of the first bus bar and the second bus bar are positioned so that the inner edges of the first bus bar are located at a predetermined distance from the second envelope formed by the elastic wave propagation. The acoustic wave resonator according to claim 1, comprising an inclined portion inclined with respect to a direction.   3. The acoustic wave resonator according to claim 1, wherein the metal constituting the metal film having an electrode finger extension non-covering portion is Al or an alloy mainly composed of Al. 4.   The first and second electrode fingers and the first and second electrode finger extensions are made of an Al film and a high-density metal having a higher density than that of the Al film and laminated on the piezoelectric substrate side of the Al film. The acoustic wave resonator according to any one of claims 1 to 3, mainly comprising an electrode film.   When the metal film of the first and second bus bars is a first metal film, the second metal film further includes a second metal film laminated on an upper surface of the first metal film. An inner edge of the electrode finger extension is located outside the outer edge of the electrode finger extension, whereby the electrode finger extension non-covering portion of the first metal film is connected to the electrode finger extension and the electrode finger extension. The elastic wave resonator of any one of Claims 1-4 located between the inner edge of a 2nd metal film.   6. The elastic wave according to claim 5, wherein σ2 × H2 <σ3 × H3, where σ2 is an average conductivity of the first metal film, σ3 is an average conductivity of the second metal film, and H3 is a film thickness. Resonator.   A ladder filter comprising the elastic wave resonator according to claim 1 as a series arm resonator or a parallel arm resonator.

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