JP5094006B2 - Liquid crystal composition and liquid crystal electro-optical device - Google Patents

Description

  The present invention relates to a liquid crystal composition used for a liquid crystal display element and an electro-optical device using the liquid crystal composition.

In recent years, liquid crystal electro-optical devices can be reduced in weight, size, and thickness, and are being used in various applications. With the development of a driving method using a high-speed response liquid crystal such as a field sequential color method, the response speed has been reduced. Improvements are particularly required. Moreover, it is known that the response time of the liquid crystal is proportional to the viscosity, and a decrease in the viscosity represents a reduction in the response time. Attempts have been made to lower the viscosity of the liquid crystal by a method such as mixing two or more types of liquid crystals. (Patent Document 1)
JP-A-7-278545

  However, in the method of mixing two or more types of liquid crystals as described above, the liquid crystals influence each other, and various liquid crystal characteristics such as voltage holding ratio and phase transition temperature change. The problem to be solved by the present invention is to provide a liquid crystal composition having a high response speed without deteriorating various liquid crystal properties such as voltage holding ratio and phase transition temperature.

This is characterized by using a liquid crystal composition of nematic liquid crystal and an inert liquid containing fluorine (C _m F _n or C _m F _n O, where m and n are natural numbers) as the liquid crystal material. Thus, a liquid crystal composition having a high liquid crystal response speed can be obtained. At this time, as the nematic liquid crystal, materials such as biphenyl, terphenyl, phenylcyclohexane, pyrimidine, fluorine, tolan or ester can be used. Examples of the fluorine-based inert solution can be perfluoro (2-butyl _{tetrahydrofuran)} C ₈ F _{16 O,} and _{C 8 F 18, C 6 F} 14. However, it is not limited to these. The amount of the inert liquid containing fluorine may be about 10 to 60 wt%, preferably about 20 to 30 wt% with respect to the amount of the liquid crystal composition.

By using the present invention, the response time of the liquid crystal can be increased. The inert liquid containing a nematic liquid crystal and fluorine (C m _{F n,} or C _{m F} n _O, where m, n are natural numbers) despite using a liquid crystal composition containing a voltage holding ratio No decrease in phase or change in phase transition temperature is observed.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
A method for manufacturing a liquid crystal electro-optical device will be described below.
1A and 1B are cross-sectional views of the liquid crystal electro-optical device of the present invention. Here, a case where the present invention is applied to the simplest liquid crystal electro-optical device will be described as an example. 101 and 102 are translucent substrates. Reference numeral 103 denotes a light-transmitting conductive film, 104 denotes an alignment film, 105 denotes a sealing material, 106 a denotes a columnar spacer, 106 b denotes a spherical spacer, and 107 denotes a liquid crystal composition.

  A light-transmitting conductive film 103 is formed over the light-transmitting substrates 101 and 102. The substrate is made of an alkali-free glass or a quartz substrate. Note that a flexible material, for example, a plastic material such as polyimide or polycarbonate may be used as long as it is a light-transmitting substrate. Thus, what is formed by a well-known method with a well-known material can be utilized as a translucent conductive film. For example, an indium and tin oxide film (Indium Tin Oxide), tin oxide, zinc oxide, or the like may be used.

  The alignment film 104 can be made of a material generally used for liquid crystal electro-optical devices, such as polyimide and polyamide. The material of the alignment film is selected according to the operation mode of the liquid crystal to be used. When the alignment film is applied on the substrate, it is possible to use a printing method or a spinner.

The alignment film 104 is subjected to an alignment process for aligning the liquid crystal. The alignment process is selected according to the operation mode of the liquid crystal to be used. For example, in the TN mode, processing is performed so that the major axis of the liquid crystal molecules is parallel to the substrate. Moreover, you may utilize the photo-alignment process using an ultraviolet-ray etc.

  The sealant 105 is made of an adhesive material for the purpose of finally sealing the liquid crystal between the substrates so as not to leak to the outside and bonding the pair of substrates together.

As the sealing material 105, materials having adhesiveness include epoxy resin, acrylic resin, and the like. The curing method may be either a thermosetting type or a photocuring type.

In addition, in order to make the space | interval of a board | substrate constant, you may add the additive which is hard to receive the deformation | transformation with respect to a sealing material as needed. When this is used when the distance between the substrates is approximately 3 μm or more, it is effective in reducing the variation in the distance between the substrates with respect to the distance between the substrates of the liquid crystal electro-optical device. At this time, a spacer having a spherical shape and a constant diameter is used as the additive. As the additive, an inorganic material such as SiO ₂ or an organic material mainly composed of divinylbenzene can be used.

  The diameter of the spacer added at this time is appropriately selected depending on the liquid crystal to be used or the operation mode. For example, in the TN mode, it is about 2 to 5 μm, and for the ferroelectric liquid crystal and antiferroelectric liquid crystal, it is about 0.5 to 3 μm.

  The amount of spacer added to the sealing material depends on the spacer used, but in many cases it may be about 3 wt%. If too much is added, the added spacers overlap each other, and a certain distance between the substrates cannot be obtained.

  The height of the columnar spacer 106a is basically good enough to prevent the sealant from seeping out to the pixel portion, but the distance between the opposing electrodes formed on the pair of substrates, that is, the substrate It is also possible to set so that the interval can be a predetermined interval. In the case of this embodiment, a conductive film, an alignment film, and the like are formed, and in some cases, a step due to these components is generated, so the height is determined in consideration of the step. That is, for example, when it is desired to set the interval between the substrates to 4 μm, if a step is formed 0.2 μm higher than the substrate surface at the position where the columnar spacer 106 a should be raised, the height of the columnar spacer 106 a should be 3.8 μm. Good. A columnar spacer corresponds to the gap retaining material.

  The spacer may be formed on either of the substrates 101 and 102, and may be formed on both substrates.

When the columnar spacer 106a is not formed, the spherical spacer 106b is dispersed on the substrate as shown in FIG. The spherical spacer 106b is a spherical substance made of an organic substance or an inorganic substance, and a substance and a spraying method used in a conventional liquid crystal electro-optical device can be used as they are. If the density of the spacers in the liquid crystal electro-optical device is generally 20 to 200 / mm ² , the distance between the substrates can be kept constant.

  In order to form the liquid crystal electro-optical device after forming the sealing material 105 and the spacer 106 on one of the pair of substrates 101 and 102 on which the light-transmitting conductive film 103 and the alignment film 104 are formed in this way. Paste to.

Next, the liquid crystal composition 107 will be described. The liquid crystal composition 107 is a mixture containing a nematic liquid crystal and an inert liquid containing fluorine (C _m F _n or C _m F _n O, where m and n are natural numbers). As the nematic liquid crystal, materials such as biphenyl, terphenyl, phenylcyclohexane, pyrimidine, fluorine, tolan or ester can be used. The inert liquid containing fluorine is a fluorocarbon organic solvent, and C _m F _n or C _m F _n O in the chemical formula, where m and n are represented by natural numbers. Specifically, perfluoro (2-butyltetrahydrofuran) C ₈ F ₁₆ O, C ₈ F ₁₈ , or C ₆ F ₁₄ can be used. For example, FLUORINERT (registered trademark) FC-77, FC-43, FC-70 manufactured by Sumitomo 3M, Galden (registered trademark) manufactured by Augmont, and Freon (registered trademark) manufactured by DuPont can be used. However, it is not limited to these, and it is needless to say that those satisfying the above chemical formula can be used. Further, the amount of the inert liquid containing fluorine may be about 10 to 60 wt%, preferably about 20 to 30 wt% with respect to the amount of the liquid crystal composition. If too much is added, the proportion of nematic liquid crystal is reduced, and unevenness is produced when displayed on a panel. Moreover, when there is little addition amount, an effect will not be acquired.

A method of mixing the nematic liquid crystal and an inert liquid containing fluorine (C _m F _n or C _m F _n O, where m and n are natural numbers) will be described. In the present embodiment, these materials are mixed and stirred for 1 hour while heating above the isotropic phase-nematic phase transition point (NI point) of the nematic liquid crystal. By stirring above the isotropic phase-nematic phase transition point (NI point), the nematic liquid crystal and the inert liquid containing fluorine are mixed. At this time, it is desirable to stir near the isotropic phase-nematic phase transition point (NI point). If the temperature is too high, the characteristics of the nematic liquid crystal will change.

  The liquid crystal composition 107 is injected into the liquid crystal cell formed by the substrates 101 and 102 by using capillary action at a temperature higher than the isotropic phase-nematic phase transition point (NI point) of the nematic liquid crystal. Also at this time, it is desirable to inject near the isotropic phase-nematic phase transition point (NI point). If the temperature is too high, the characteristics of the nematic liquid crystal change. Further, a vacuum injection method may be used for the injection. When the alignment state after the injection is confirmed by sandwiching it between polarizing plates on the backlight, it cannot be confirmed that it is separated.

Through the above steps, the nematic liquid crystal and fluorine inert liquid containing (C m _{F n,} or C _{m F} n _O, where m, n are natural numbers) liquid crystal electro-optical high response speed comprised of mixture containing A device can be made.

(Embodiment 2)
2A and 2B are cross-sectional views of the liquid crystal electro-optical device of the present invention. Here, a case where the present invention is applied to an active matrix type liquid crystal electro-optical device will be described as an example. Here, as an example, the drive circuit is formed on the same substrate in the active matrix substrate. 201 is an active matrix substrate, and 202 is a counter substrate. Reference numeral 203 denotes a pixel portion, 204 denotes a driving circuit (gate driver) for controlling the pixel portion 203, 205a denotes a columnar spacer, 205b denotes a spherical spacer, 206 denotes a sealing material, 207 denotes a counter electrode, 208 denotes an alignment film, and 209 denotes a liquid crystal composition It is a thing. The pixel portion corresponds to a pixel region.

  In the active matrix substrate 201, pixel electrodes and signal electrodes are formed over a light-transmitting substrate. The substrate is made of an alkali-free glass or a quartz substrate. Note that a flexible material, for example, a plastic material such as polyimide or polycarbonate may be used as long as it is a light-transmitting substrate. As described above, an active matrix substrate having a known circuit configuration and formed of a known material can be used. As the active matrix substrate, a substrate formed on a glass substrate, a substrate formed on a Si wafer, and a substrate formed on a metal substrate can be used.

  As the active matrix substrate 201, a substrate in which a pixel circuit using active elements is formed, or a substrate in which a drive circuit is formed around the pixel circuit on the same substrate can be used.

  As the counter substrate 202, a light-transmitting substrate can be used. The substrate is made of an alkali-free glass or a quartz substrate. In addition to this, the substrate may be a flexible material, for example, a plastic material such as polyimide or polycarbonate.

The counter substrate 202 is formed by a known technique such as a liquid crystal electro-optical device in which a color filter on the substrate is processed into a desired shape for color display, or a transparent electrode and a black matrix alone. Can be used.

  The alignment film 208 can be made of a material generally used for a liquid crystal electro-optical device, such as polyimide or polyamide. The material of the alignment film is selected according to the operation mode of the liquid crystal to be used. When the alignment film is applied on the substrate, it is possible to use a printing method or a spinner.

  Since the alignment film 208 is generally made of an electrically insulating material, the electrode surface is exposed so that the signal electrode formed on the substrate can be electrically connected to the external electric circuit. Process into desired shape. In order to process the alignment film into a desired shape, a printing method is desirable.

  The alignment film 208 is subjected to an alignment process for aligning the liquid crystal. The alignment process is selected according to the operation mode of the liquid crystal to be used. For example, in the TN mode, processing is performed so that the major axis of the liquid crystal molecules is parallel to the substrate. Moreover, you may utilize the photo-alignment process using an ultraviolet-ray etc.

  The sealant 206 is made of an adhesive material for the purpose of finally sealing the liquid crystal between the substrates so as not to leak to the outside and bonding the pair of substrates together.

  As the sealing material 206, an epoxy resin, an acrylic resin, or the like can be given as an adhesive material. The curing method may be either a thermosetting type or a photocuring type.

In addition, in order to make the space | interval of a board | substrate constant, you may add the additive which is hard to receive the deformation | transformation with respect to a sealing material as needed. If this is used when the distance between the substrates is approximately 3 μm or more, it is effective in reducing variations in the distance between the substrates of the liquid crystal electro-optical device. At this time, a spacer having a spherical shape and a constant diameter is used as the additive. As the additive, an inorganic material such as SiO ₂ or an organic material mainly composed of divinylbenzene can be used.

  The diameter of the spacer added at this time is appropriately selected depending on the liquid crystal to be used or the operation mode. For example, in the TN mode, it is about 2 to 5 μm, and for the ferroelectric liquid crystal and antiferroelectric liquid crystal, it is about 0.5 to 3 μm.

  The amount of spacer added to the sealing material depends on the spacer used, but in many cases it may be about 3 wt%. If too much is added, the added spacers overlap each other, and a certain distance between the substrates cannot be obtained.

  In addition, the height of the columnar spacer 205a is basically good enough to prevent the sealing material from seeping into the pixel portion, but the interval between the opposing pixel electrodes formed on the pair of substrates, that is, It can also be set so that the interval between the substrates can be a predetermined interval. In particular, when the active matrix substrate 201 is used, signal wiring, a black matrix, an auxiliary capacitor, an interlayer insulating film, and the like are formed. In some cases, a step due to these components is generated. Decide. That is, for example, when it is desired to set the interval between the substrates to 4 μm, if a step is formed 0.2 μm higher than the substrate surface at the position where the columnar spacers 205 a should be raised, the height of the columnar spacers 205 a should be 3.8 μm. Good. A columnar spacer corresponds to the gap retaining material.

  Note that a columnar spacer may be provided in a portion that does not affect display in the pixel portion, for example, on a source wiring, a gate wiring, or a black matrix, and may be used for holding a gap between substrates.

  Further, although the case where the spacer is formed on the active matrix substrate 201 is taken as an example, the present invention is not limited to this, and the spacer may be formed on the counter substrate 202 or may be formed on both substrates. However, when the spacer is also formed in the pixel portion, it is desirable to form the spacer on the active matrix substrate by a photolithography method in order to increase the alignment accuracy between the pixel formed on the substrate and the spacer. This is because the mask aligner generally has higher alignment accuracy than the bonding apparatus.

When the columnar spacer 205a is not formed, spherical spacers 205b are dispersed on the substrate as shown in FIG. The spherical spacer is a spherical substance made of an organic substance or an inorganic substance, and a substance and a spraying method used in a conventional liquid crystal electro-optical device can be used as they are. If the density of the spacers in the liquid crystal electro-optical device is generally 20 to 200 / mm ² , the distance between the substrates can be kept constant.

  In this manner, spacers are formed on any of the alignment film, the seal pattern, the active matrix substrate, and the counter substrate, and then bonded to form a liquid crystal electro-optical device.

Next, the liquid crystal composition 209 will be described. A liquid crystal composition 209 is a mixture including a nematic liquid crystal and an inert liquid containing fluorine (C _m F _n or C _m F _n O, where m and n are natural numbers), and is described in Embodiment Mode 1. Can be used. As the nematic liquid crystal, materials such as biphenyl, terphenyl, phenylcyclohexane, pyrimidine, fluorine, tolan or ester can be used. The amount of the inert liquid containing fluorine may be about 20 to 30 wt% with respect to the amount of the liquid crystal composition. If too much is added, the proportion of nematic liquid crystal is reduced, and unevenness is produced when displayed on a panel. If the amount added is too small, the effect cannot be obtained.

A method of mixing the nematic liquid crystal and an inert liquid containing fluorine (C _m F _n or C _m F _n O, where m and n are natural numbers) will be described. In the present embodiment, these materials are mixed and stirred for 1 hour while heating above the isotropic phase-nematic phase transition point (NI point) of the nematic liquid crystal. By stirring above the isotropic phase-nematic phase transition point (NI point), the nematic liquid crystal and the inert liquid containing fluorine are mixed. At this time, it is desirable to stir near the isotropic phase-nematic phase transition point (NI point). If the temperature is too high, the characteristics of the nematic liquid crystal will be altered.

  The liquid crystal composition 209 is injected into the liquid crystal cell formed by the substrates 201 and 202 by using capillary action at a temperature higher than the isotropic phase-nematic phase transition point (NI point) of the nematic liquid crystal. Also at this time, it is desirable to inject near the isotropic phase-nematic phase transition point (NI point), and if the temperature is too high, the characteristics of the nematic liquid crystal will be altered. Further, a vacuum injection method may be used for the injection. When the alignment state after the injection is confirmed by sandwiching it between polarizing plates on the backlight, it cannot be confirmed that it is separated.

Through the above steps, the nematic liquid crystal and fluorine inert liquid containing (C m _{F n,} or C _{m F} n _O, where m, n are natural numbers) fast liquid crystal electro-optical device response speed consists of a mixture of Can be produced.

  Although an active matrix type liquid crystal electro-optical device has been described as an example in this embodiment mode, the present invention can also be applied to a simple matrix type liquid crystal electro-optical device.

  The liquid crystal composition 209 used in this embodiment can also be applied to a liquid crystal electro-optical device manufactured by a manufacturing method using a dropping injection method.

A method for manufacturing a liquid crystal electro-optical device will be described below.
A transparent conductive film (Indium Tin Oxide (hereinafter referred to as ITO)) is formed to a thickness of 100 nm on a glass substrate by a sputtering method. After applying a resist and calcining, exposure was performed using an electrode mask, and the resist was developed by a wet etching method. The transparent conductive film (ITO) was etched by a wet etching method, and the resist was removed with a stripping solution. After removing the resist, the transparent conductive film (ITO) was baked at 250 ° C. for 1 hour.

  The glass substrate on which the transparent conductive film (ITO) electrode was formed was cleaned. A polyimide resin was printed to a thickness of about 40 nm by letterpress printing, and the polyimide resin was baked at 200 ° C. for 90 minutes. After firing, the polyimide resin was aligned by a rubbing method, and the glass substrate was washed.

  A glass substrate on which one transparent conductive film (ITO) electrode is formed is coated with a thermosetting sealing material mixed with a 2.2 μm gap retaining material, and a pattern is formed so as to surround the outside of the electrode using a dispenser. did.

  On the glass substrate on which the other transparent conductive film (ITO) electrode was formed, a 2 μm spherical spacer was mixed in isopropyl alcohol and wet spraying was performed using a spinner.

An ultraviolet curable sealant was dropped on the opposite side of the glass substrate on which the spacers were dispersed, and was bonded to a glass substrate on which a pattern was formed with a thermosetting sealant. Pressing was performed at a pressure of 1.0 kgf / cm ² for 15 minutes, and ultraviolet rays were irradiated for 1 minute to cure the ultraviolet curable sealing material. After completion of pressing, hot pressing was performed at a pressure of 1.0 kgf / cm ² , and the bonded substrate was cut into a panel size.

For the production of the liquid crystal composition, TL215 made by Merck Co., which is a nematic liquid crystal, and FLUORINERT (registered trademark) FC-43 made by Sumitomo 3M, which is an inert liquid containing fluorine, were used. As for the physical properties of the nematic liquid crystal TL215, the refractive index anisotropy value Δn is about 0.2 and the dielectric constant is 8.5. The physical properties of FLUORINERT (registered trademark) FC-43 are a boiling point of 174 ° C., a melting point of −50 ° C., a density of 1.88 kg / m ³ , and a kinematic viscosity of 2.8 cSt. FLUORINERT (registered trademark) FC-43 is mixed with nematic liquid crystal TL215 at a ratio of 0 wt%, 30 wt%, and 60 wt%, and stirred while heating at 90 ° C so that the liquid crystal material is in an isotropic phase (liquid) state. By performing for 1 hour, the liquid-crystal composition was obtained.

  A liquid crystal composition of an inert liquid containing nematic liquid crystal and fluorine was injected while the cut panel was heated to 90 ° C. on a hot plate.

  A simple liquid crystal electro-optical device was manufactured by connecting lead wires to a cell into which a liquid crystal composition of nematic liquid crystal TL215 and FLUORINERT (registered trademark) FC-43 was injected (FIG. 1).

  A polarizing microscope was used to observe the response of the liquid crystal using an oscilloscope by applying a voltage to the lead wire with the polarizing plate crossed Nicol and sandwiching the cell into which the liquid crystal composition was injected. A rectangular wave of 0V-10V and a voltage of a frequency of 0.1 Hz were applied with an arbitrary waveform generator. The relationship between the response time of the liquid crystal composition and the ratio of FLUORINERT (registered trademark) FC-43 added to the nematic liquid crystal is shown in FIG. The vertical axis represents the response time (ms) of the liquid crystal composition, and the horizontal axis represents the ratio (wt%) of FLUORINERT (registered trademark) FC-43 added to the nematic liquid crystal. The rise response time refers to the response time required when the display is switched from the OFF state to the ON state, and the fall response time is the response time required when the display is switched from the ON state to the OFF state. Point to. In addition, the AVE. Is the average time of rise time and fall time. From this result, it is confirmed that the response speed of the liquid crystal composition to which FLUORINERT (registered trademark) FC-43 is added is higher than the response speed of nematic liquid crystal TL215 (when the ratio is 0 wt%, that is, pure nematic liquid crystal TL215). done.

  The isotropic phase-nematic phase transition point (NI point) of the nematic liquid crystal TL215 is 83.3 ° C., and the isotropic phase-nematic phase transition point of the liquid crystal composition to which FLUORINERT (registered trademark) FC-43 is added. The (NI point) was 83.5 ° C. at 30 wt% and 83.3 ° C. at 60 wt%. From this, it was confirmed that the transition point (NI point) of the isotropic phase-nematic phase did not change even when the addition amount of FLUORINERT (registered trademark) FC-43 was increased.

Next, the voltage holding ratio was measured. Using a field-effect transistor, a pulse of 64 μsec and 10 V was applied to the liquid crystal cell every 30 msec, and the rate of decrease in the potential of the liquid crystal electro-optical device cell at that time was obtained from the effective value to obtain the voltage holding ratio. Even though the amount of FLUORINERT (registered trademark) FC-43 increased with respect to the voltage holding ratio of 99% of the nematic liquid crystal TL215, the voltage holding ratio was 98 to 99%, and no particular change was observed.

Instead of FLUORINERT (registered trademark) FC-43 used in Example 1, the same procedure as in Example 1 was used except that FLUORINERT (registered trademark) FC-70 manufactured by Sumitomo 3M, which is an inert liquid containing fluorine, was used. A liquid crystal electro-optical device of Example 2 was produced. (FIG. 1) The physical properties of FLUORINERT (registered trademark) FC-70 are a boiling point of 215 ° C., a melting point of −25 ° C., a density of 1.94 kg / m ³ , and a kinematic viscosity of 14.0 cSt.

  Using a polarizing microscope, the response of the liquid crystal was observed using an oscilloscope by applying a voltage to the lead wire in a state where the polarizing plate was crossed Nicol and the cell into which the liquid crystal composition was injected was sandwiched. A rectangular wave of 0V-10V and a voltage of a frequency of 0.1 Hz were applied with an arbitrary waveform generator. The relationship between the response time of the liquid crystal composition and the ratio of FLUORINERT (registered trademark) FC-70 added to the nematic liquid crystal is shown in FIG. The vertical axis represents the response time (ms) of the liquid crystal composition, and the horizontal axis represents the ratio (wt%) of FLUORINERT (registered trademark) FC-70 added to the nematic liquid crystal. From this result, it is confirmed that the response speed of the liquid crystal composition to which FLUORINERT (registered trademark) FC-70 is added becomes higher than the response speed of nematic liquid crystal TL215 (when the ratio is 0 wt%, that is, pure nematic liquid crystal TL215). done.

  The isotropic-nematic phase transition point (NI point) of the nematic liquid crystal TL215 is 83.3 ° C., and the isotropic phase-nematic phase transition point of the liquid crystal composition to which FLUORINERT (registered trademark) FC-70 is added. The (NI point) was 83.5 ° C. at 30 wt% and 83.7 ° C. at 60 wt%. From this, it was confirmed that the transition point (NI point) of the isotropic phase-nematic phase did not change even when the addition amount of FLUORINERT (registered trademark) FC-70 was increased.

  Next, the voltage holding ratio was measured. Using a field-effect transistor, a pulse of 64 μsec and 10 V was applied to the liquid crystal cell every 30 msec, and the rate of decrease in the potential of the liquid crystal electro-optical device cell at that time was obtained from the effective value to obtain the voltage holding ratio. There was no particular change in the voltage holding ratio of 98 to 99% even when the amount of FLUORINERT (registered trademark) FC-70 was increased with respect to the voltage holding ratio of 99% of the nematic liquid crystal TL215.

Instead of FLUORINERT (registered trademark) FC-43 used in Example 1, the same procedure as in Example 1 was used except that FLUORINERT (registered trademark) FC-77 made by Sumitomo 3M, which is an inert liquid containing fluorine, was used. A liquid crystal electro-optical device of Example 3 was produced. (FIG. 1) The physical properties of FLUORINERT (registered trademark) FC-77 are a boiling point of 97 ° C., a melting point of −110 ° C., a density of 1.78 kg / m ³ , and a kinematic viscosity of 0.8 cSt.

  Using a polarizing microscope, the response of the liquid crystal was observed using an oscilloscope by applying a voltage to the lead wire in a state where the polarizing plate was crossed Nicol and the cell into which the liquid crystal composition was injected was sandwiched. A rectangular wave of 0V-10V and a voltage of a frequency of 0.1 Hz were applied with an arbitrary waveform generator. The relationship between the response time of the liquid crystal composition and the ratio of FLUORINERT (registered trademark) FC-70 added to the nematic liquid crystal is shown in FIG. The vertical axis represents the response time (ms) of the liquid crystal composition, and the horizontal axis represents the ratio (wt%) of FLUORINERT (registered trademark) FC-77 added to the nematic liquid crystal. From this result, it is confirmed that the response speed of the liquid crystal composition to which FLUORINERT (registered trademark) FC-77 is added becomes higher than the response speed of nematic liquid crystal TL215 (when the ratio is 0 wt%, that is, pure nematic liquid crystal TL215). done.

  The isotropic-nematic phase transition point (NI point) of the nematic liquid crystal TL215 is 83.3 ° C., and the isotropic phase-nematic phase transition point of the liquid crystal composition to which FLUORINERT (registered trademark) FC-77 is added. (NI point) was 82.8 ° C. at 30 wt% and 83.3 ° C. at 60 wt%. From this, it was confirmed that the transition point (NI point) of the isotropic phase-nematic phase did not change even when the addition amount of FLUORINERT (registered trademark) FC-77 was increased.

  Next, the voltage holding ratio was measured. Using a field-effect transistor, a pulse of 64 μsec and 10 V was applied to the liquid crystal cell every 30 msec, and the rate of decrease in the potential of the liquid crystal electro-optical device cell at that time was obtained from the effective value to obtain the voltage holding ratio. Even though the amount of FLUORINERT (registered trademark) FC-77 increased with respect to the voltage holding ratio of 99% of the nematic liquid crystal TL215, the voltage holding ratio was 98 to 99%, and no particular change was observed.

  Instead of the nematic liquid crystal (TL215 manufactured by Merck) used in Example 1, nematic liquid crystal (ZLI4792 manufactured by Merck) was used, and FLUORINERT (registered trademark) FC-43 was 0 wt%, 10 wt% relative to the nematic liquid crystal ZLI4792. %, 20 wt%, 30 wt%, 40 wt%, 50 wt%, and 60 wt% were mixed in the same manner as in Example 1 to produce a liquid crystal electro-optical device of Example 4. (FIG. 1) The physical properties of nematic liquid crystal ZLI4792 are a refractive index anisotropy value Δn of about 0.09 and a dielectric constant of 5.2.

  Using a polarizing microscope, the response of the liquid crystal was observed using an oscilloscope by applying a voltage to the lead wire in a state where the polarizing plate was crossed Nicol and the cell into which the liquid crystal composition was injected was sandwiched. A rectangular wave of 0V-10V and a voltage of a frequency of 0.1 Hz were applied with an arbitrary waveform generator. FIG. 6 shows the relationship between the response time of the liquid crystal composition and the ratio of FLUORINERT (registered trademark) FC-43 added to the nematic liquid crystal. The vertical axis represents the response time (ms) of the liquid crystal composition, and the horizontal axis represents the ratio (wt%) of FLUORINERT (registered trademark) FC-43 added to the nematic liquid crystal. From this result, it is confirmed that the response speed of the liquid crystal composition to which FLUORINERT (registered trademark) FC-43 is added is higher than the response speed of nematic liquid crystal ZLI4792 (when the ratio is 0 wt%, that is, pure nematic liquid crystal ZLI4792). done.

  The isotropic-nematic phase transition point (NI point) of the nematic liquid crystal ZLI4792 is 97.6 ° C., and the isotropic phase-nematic phase transition point of the liquid crystal composition to which FLUORINERT (registered trademark) FC-43 is added. (NI point) is 97.5 ° C. at 10 wt%, 97.7 ° C. at 20 wt%, 97.3 ° C. at 30 wt%, 97.1 ° C. at 40 wt%, 97.4 ° C. at 50 wt%, and 97.000 at 60 wt%. It was 1 ° C. From this, it was confirmed that the transition point (NI point) of the isotropic phase-nematic phase did not change even when the addition amount of FLUORINERT (registered trademark) FC-43 was increased.

Next, the voltage holding ratio was measured. Using a field-effect transistor, a pulse of 64 μsec and 10 V was applied to the liquid crystal cell every 30 msec, and the rate of decrease in the potential of the liquid crystal electro-optical device cell at that time was obtained from the effective value to obtain the voltage holding ratio. The voltage holding ratio was 98 to 99% even when the addition amount of FLUORINERT (registered trademark) FC-43 was increased with respect to the voltage holding ratio of 98% of the nematic liquid crystal ZLI4792.

  In this embodiment, a method for manufacturing a TFT provided in a pixel when the present invention is applied to an active matrix electro-optical device will be described.

  First, as shown in FIG. 7A, a base film 501 is formed over a substrate 500. As the substrate 500, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a stainless steel substrate, or the like can be used. It is also possible to use a substrate made of a plastic such as PET, PES, or PEN, or a flexible synthetic resin such as acrylic.

  The base film 501 is provided to prevent an alkali metal such as Na or an alkaline earth metal contained in the substrate 500 from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element. Therefore, an insulating film such as silicon nitride or silicon oxide containing nitrogen that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film is used. In this embodiment, a silicon oxide film containing nitrogen is formed to a thickness of 10 nm to 400 nm (preferably 50 nm to 300 nm) by a plasma CVD method.

  Note that even though the base film 501 is a single layer of an insulating film such as silicon nitride, silicon oxide containing nitrogen, or silicon nitride containing oxygen, insulation such as silicon oxide, silicon nitride, silicon oxide containing nitrogen, or silicon nitride containing oxygen is used. A plurality of laminated films may be used. In addition, when using a substrate containing an alkali metal or alkaline earth metal, such as a glass substrate, a stainless steel substrate, or a plastic substrate, it is effective to provide a base film from the viewpoint of preventing impurity diffusion. However, when diffusion of impurities does not cause any problem, such as a quartz substrate, it is not necessarily provided.

    Next, a semiconductor film 502 is formed over the base film 501. The thickness of the semiconductor film 502 is 25 nm to 100 nm (preferably 30 nm to 60 nm). Note that the semiconductor film 502 may be an amorphous semiconductor or a polycrystalline semiconductor. As the semiconductor, not only silicon (Si) but also silicon germanium (SiGe) can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

  Next, as shown in FIG. 7B, the semiconductor film 502 is irradiated with a linear laser 499 to be crystallized. In the case of laser crystallization, heat treatment at 500 ° C. for 1 hour may be performed on the semiconductor film 502 in order to increase the resistance of the semiconductor film 502 to the laser before laser crystallization.

  For laser crystallization, a pulsed laser having an oscillation frequency of 10 MHz or more, preferably 80 MHz or more can be used as a continuous wave laser or a pseudo CW (Continuous-Wave) laser.

Specifically, as a continuous wave laser, Ar laser, Kr laser, CO ₂ laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, GdVO ₄ laser, Y ₂ O ₃ laser, ruby laser, alexandrite laser Ti: sapphire laser, helium cadmium laser, and the like.

As a pseudo CW laser, an Ar laser, a Kr laser, an excimer laser, a CO ₂ laser, a YAG laser, a YVO ₄ laser, a YLF laser, if the oscillation frequency is 10 MHz or more, preferably 80 MHz or more can be oscillated. A pulsed laser such as YAlO ₃ laser, GdVO ₄ laser, Y ₂ O ₃ laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser, or gold vapor laser can be used.

  Such a pulsed laser has an effect equivalent to that of a continuous wave laser as the oscillation frequency is increased.

For example, when a solid-state laser capable of continuous oscillation is used, a crystal having a large grain size can be obtained by irradiating laser light of second to fourth harmonics. Typically, it is desirable to use the second harmonic (532 nm) or the third harmonic (355 nm) of a YAG laser (fundamental wave 1064 nm). For example, laser light emitted from a continuous wave YAG laser is converted into a harmonic by a non-linear optical element, and irradiated to the semiconductor film 502. Energy density may be about 0.01 to 100 MW / cm ² (preferably 0.1~10MW / cm ^2).

  Note that laser light irradiation may be performed in an atmosphere containing an inert gas such as a rare gas or nitrogen. Thereby, roughness of the semiconductor surface due to laser light irradiation can be suppressed, and variation in threshold voltage caused by variation in interface state density can be suppressed.

  By irradiating the semiconductor film 502 with laser light, the crystalline semiconductor film 504 with higher crystallinity is formed.

  Next, as illustrated in FIG. 7C, the crystalline semiconductor film 504 is processed into a desired shape, so that island-shaped semiconductor films 507 to 509 are formed.

Next, an impurity for threshold control is introduced into the island-shaped semiconductor film. In this embodiment, boron (B) is introduced into the island-shaped semiconductor film by doping diborane (B ₂ H ₆ ).

  Next, an insulating film 510 is formed so as to cover the island-shaped semiconductor films 507 to 509. For the insulating film 510, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxide containing nitrogen (SiON), or the like can be used. As a film formation method, a plasma CVD method, a sputtering method, or the like can be used.

  Next, after a conductive film is formed over the insulating film 510, the gate electrode 570 to 572 is formed by processing the conductive film into a desired shape.

  The gate electrodes 570 to 572 are formed using a structure in which a single conductive film or two or more conductive films are stacked. In the case where two or more conductive films are stacked, an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al), or the element as a main component The gate electrodes 570 to 572 may be formed by stacking alloy materials or compound materials to be stacked. Alternatively, the gate electrode may be formed using a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus (P).

  In this embodiment, the gate electrodes 570 to 572 are formed as follows. First, as the first conductive film 511, for example, a tantalum nitride (TaN) film is formed with a thickness of 10 to 50 nm, for example, 30 nm. Then, as the second conductive film 512, for example, a tungsten (W) film is formed with a thickness of 200 to 400 nm, for example, 370 nm, over the first conductive film 511, and the first conductive film 511 and the second conductive film 512 are formed. Is formed (FIG. 7D).

  Next, the second conductive film 512 is etched by anisotropic etching to form upper gate electrodes 560 to 562 (FIG. 8A). Next, the first conductive film 511 is etched by isotropic etching to form lower gate electrodes 563 to 565 (FIG. 8B). Thus, gate electrodes 570 to 572 are formed.

  The gate electrodes 570 to 572 may be formed as part of the gate wiring, or another gate wiring may be formed and the gate electrodes 570 to 572 may be connected to the gate wiring.

  Then, using the gate electrodes 570 to 572 or a resist film formed into a desired shape as a mask, each of the island-like semiconductor films 507 to 509 has one conductivity (n-type or p-type conductivity). A source region, a drain region, a low-concentration impurity region, and the like are formed by adding an impurity that imparts.

First, phosphorous (P) is introduced into the island-shaped semiconductor film using phosphine (PH ₃ ) with an acceleration voltage of 60 to 120 keV and a dose of 1 × 10 ¹³ to 1 × 10 ¹⁵ cm ⁻² . When this impurity is introduced, channel formation regions 522 and 527 of n-channel TFTs 550 and 552 are formed.

Further, in order to manufacture the p-channel TFT 551, diborane (B ₂ H ₆ ) is applied with an applied voltage of 60 to 100 keV, for example, 80 keV, a dose amount of 1 × 10 ^{13 to} 5 × 10 ¹⁵ cm ⁻² , for example, 3 × 10 ¹⁵ cm ^{−. Under} the condition (2), boron (B) is introduced into the island-shaped semiconductor film. Accordingly, a source region or a drain region 523 of the p-channel TFT and a channel formation region 524 are formed when this impurity is introduced (FIG. 8C).

  Next, the insulating film 510 is processed into a desired shape to form gate insulating films 580 to 582.

After the gate insulating films 580 to 582 are formed, an applied voltage of 40 to 80 keV, for example, 50 keV, and a dose amount of 1.0 × 10 ¹⁵ are formed using phosphine (PH ₃ ) in the island-shaped semiconductor films to be the n-channel TFTs 550 and 552. Phosphorus (P) is introduced at ˜2.5 × 10 ¹⁶ cm ⁻² , for example, 3.0 × 10 ¹⁵ cm ⁻² . Thus, low-concentration impurity regions 521 and 526 and source or drain regions 520 and 525 of the n-channel TFT are formed (FIG. 9A).

In this embodiment, the source or drain regions 520 and 525 of the n-channel TFTs 550 and 552 each contain phosphorus (P) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ^−3. Become. Each of the low-concentration impurity regions 521 and 526 of the n-channel TFTs 550 and 552 contains phosphorus (P) at a concentration of 1 × 10 ^{18 to} 5 × 10 ¹⁹ cm ⁻³ . Further, the source or drain region 523 of the p-channel TFT 551 contains boron (B) at a concentration of 1 × 10 ^{19 to} 5 × 10 ²¹ cm ⁻³ .

  Next, a first interlayer insulating film 530 is formed to cover the island-shaped semiconductor films 507 to 509 and the gate electrodes 570 to 572 (FIG. 9B).

  As the first interlayer insulating film 530, an insulating film containing silicon, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon oxide film containing nitrogen (SiON), using plasma CVD or sputtering, Or it forms with the laminated film. Needless to say, the first interlayer insulating film 530 is not limited to a silicon oxide film or silicon nitride film containing nitrogen, or a laminated film thereof, and other insulating films containing silicon may be used as a single layer or a laminated structure. .

  In this embodiment, after introducing impurities, a silicon oxide film containing nitrogen (SiON film) is formed to a thickness of 50 nm by plasma CVD, and the impurities are activated by laser irradiation or RTA. Alternatively, after forming a silicon oxide film containing nitrogen, the impurity may be activated by heating at 550 ° C. for 4 hours in a nitrogen atmosphere.

  Next, a silicon nitride film (SiN film) is formed with a thickness of 50 nm by plasma CVD, and a silicon oxide film (SiON film) containing nitrogen is further formed with a thickness of 600 nm. The stacked film of the silicon oxide film containing nitrogen, the silicon nitride film, and the silicon oxide film containing nitrogen is the first interlayer insulating film 530.

  Next, the whole is heated at 410 ° C. for 1 hour, and hydrogen is released by releasing hydrogen from the silicon nitride film.

  Next, a second interlayer insulating film 531 that functions as a planarization film is formed so as to cover the first interlayer insulating film 530.

  As the second interlayer insulating film 531, a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, and a stacked structure thereof can be used. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, as a substituent, an organic group containing at least hydrogen and a fluoro group may be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

  In this embodiment, siloxane is formed as the second interlayer insulating film 531 by a spin coating method.

  The first interlayer insulating film 530 and the second interlayer insulating film 531 are etched to form contact holes reaching the island-shaped semiconductor films 507 to 509 in the first interlayer insulating film 530 and the second interlayer insulating film 531.

  Note that a third interlayer insulating film may be formed on the second interlayer insulating film 531, and contact holes may be formed in the first to third interlayer insulating films. As the third interlayer insulating film, a film that hardly transmits moisture, oxygen, or the like as compared with other insulating films is used. Typically, a silicon nitride film, a silicon oxide film, a silicon nitride film containing oxygen (SiNO film (composition ratio N> O) or SiON film (composition ratio N <O)) obtained by sputtering or CVD, carbon A thin film (for example, a DLC film or a CN film) whose main component is can be used.

  A third conductive film is formed over the second interlayer insulating film 531 through a contact hole, and the third conductive film is processed into a desired shape to form electrodes or wirings 540 to 544.

  In this embodiment, a metal film is used for the third conductive film. As the metal film, a film made of an element of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si) or an alloy film using these elements may be used. In this embodiment, a titanium film (Ti), a titanium nitride film (TiN), a silicon-aluminum alloy film (Al-Si), and a titanium film (Ti) are laminated to 60 nm, 40 nm, 300 nm, and 100 nm, respectively. Etching into a shape forms electrodes or wirings 540 to 544.

  Alternatively, the electrodes or wirings 540 to 544 may be formed of an aluminum alloy film containing at least one element selected from nickel, cobalt, and iron, and carbon. Such an aluminum alloy film can prevent mutual diffusion of silicon and aluminum even when it comes into contact with silicon. In addition, since such an aluminum alloy film does not cause an oxidation-reduction reaction even when it comes into contact with a transparent conductive film, for example, an ITO (Indium Tin Oxide) film, both can be brought into direct contact with each other. Furthermore, such an aluminum alloy film is useful as a wiring material because of its low specific resistance and excellent heat resistance.

  Each of the electrodes or wirings 540 to 544 may be formed with electrodes and wirings at the same time, or electrodes and wirings may be separately formed and connected.

  Through the above series of steps, a CMOS circuit 553 including the n-channel TFT 550 and the p-channel TFT 551 and a semiconductor device including the n-channel TFT 552 can be formed (FIG. 9C). Note that the method for manufacturing a semiconductor device of the present invention is not limited to the manufacturing process described above after the formation of the island-shaped semiconductor film.

  In this embodiment, an example in which a liquid crystal electro-optical device (Liquid Crystal Display (LCD)) is manufactured using the present invention will be described.

  The manufacturing method of the electro-optical device described in this embodiment is a method of simultaneously manufacturing a pixel portion including a pixel TFT and a TFT of a driver circuit portion provided around the pixel portion. However, in order to simplify the explanation, a CMOS circuit which is a basic unit with respect to the drive circuit is illustrated.

  First, based on Example 5, the processes up to formation of electrodes or wirings 540 to 544 in FIG. In addition, the same thing as the said Example is represented with the same code | symbol.

  Next, a third interlayer insulating film 610 is formed over the second interlayer insulating film 531 and the electrodes or wirings 540 to 544. Note that the third interlayer insulating film 610 can be formed using a material similar to that of the second interlayer insulating film 531.

Next, a resist mask is formed using a photomask, and a part of the third interlayer insulating film 610 is removed by dry etching to form an opening (a contact hole is formed). In this contact hole formation, carbon tetrafluoride (CF ₄ ), oxygen (O ₂ ), and helium (He) were used as etching gases, and CF ₄ , O ₂ , and He were used at flow rates of 50 sccm, 50 sccm, and 30 sccm, respectively. . Note that the bottom of the contact hole reaches the electrode or wiring 544.

  Next, after removing the resist mask, a second conductive film is formed over the entire surface. Next, using the photomask, the second conductive film is processed into a desired shape, so that the pixel electrode 623 electrically connected to the electrode or the wiring 544 is formed (FIG. 10). In this embodiment, since a reflective liquid crystal display panel is manufactured, it has light reflectivity such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum) by sputtering. What is necessary is just to form using a metal material.

When a transmissive liquid crystal display panel is manufactured, a transparent conductive film such as indium tin oxide (ITO), indium tin oxide containing silicon oxide, zinc oxide (ZnO), or tin oxide (SnO ₂ ) is used. A pixel electrode 623 is formed.

  FIG. 12 shows an enlarged top view of a part of the pixel portion 650 including the pixel TFT. In FIG. 12, a diagram cut along a solid line A-A ′ corresponds to the cross section of the pixel portion in FIG. 10, and the same reference numerals are used for portions corresponding to FIG. 10.

  As shown in FIG. 12, the gate electrode 572 is connected to the gate wiring 630. The electrode 543 is integrally formed with the source wiring.

  In addition, a capacitor wiring 631 is provided, and the storage capacitor is formed of the pixel electrode 623 and the capacitor wiring 631 overlapping the pixel electrode, using the first interlayer insulating film 530 as a dielectric.

  In this embodiment, in the region where the pixel electrode 623 and the capacitor wiring 631 overlap, the second interlayer insulating film 531 and the third interlayer insulating film 610 are etched, and the storage capacitor has the pixel electrode 623, the first interlayer insulating film 530, and A capacitor wiring 631 is formed. However, if the second interlayer insulating film 531 and the third interlayer insulating film 610 can also be used as dielectrics, the second interlayer insulating film 531 and the third interlayer insulating film 610 need not be etched. In that case, the first interlayer insulating film 530, the second interlayer insulating film 531 and the third interlayer insulating film 610 function as a dielectric. Alternatively, only the third interlayer insulating film 610 may be etched, and the first interlayer insulating film 530 and the second interlayer insulating film 531 may be used as a dielectric.

  Through the above steps, the TFT substrate of the liquid crystal electro-optical device in which the CMOS circuit 553 and the pixel electrode 623 including the top-gate pixel TFT 552, the top-gate n-channel TFT 550, and the p-channel TFT 551 are formed on the substrate 500 is obtained. Complete. In this embodiment, a top gate type TFT is formed, but a bottom gate type TFT can be used as appropriate.

  Next, an alignment film 624 a is formed so as to cover the pixel electrode 623. Note that the alignment film 624a may be formed using a droplet discharge method, a screen printing method, or an offset printing method. Thereafter, a rubbing process is performed on the surface of the alignment film 624a.

  The counter substrate 625 is provided with a color filter composed of a colored layer 626a, a light shielding layer (black matrix) 626b, and an overcoat layer 627, a counter electrode 628 composed of a transparent electrode or a reflective electrode, and an alignment film thereon. 624b is formed (FIG. 11). Then, a sealing material 600 having a closed pattern is formed so as to surround a region overlapping with the pixel portion 650 including the pixel TFT by a droplet discharge method (FIG. 13A). Here, an example in which a sealing material 600 having a closed pattern is drawn in order to drop liquid crystal is shown. However, a dip type (in which liquid crystal is injected by using a capillary phenomenon after providing a sealing pattern having an opening and bonding the substrate 500 together) A pumping type) may be used.

  Next, the liquid crystal composition 629 is dropped under reduced pressure so that bubbles do not enter (FIG. 13B), and both the substrates 500 and 625 are attached (FIG. 13C). The liquid crystal is dropped once or a plurality of times in the closed loop seal pattern. As the liquid crystal composition, those shown in Examples 1 to 4 may be used. As an alignment mode of the liquid crystal composition 629, a TN mode in which the alignment of liquid crystal molecules is twisted by 90 ° from light incidence to light emission is used. And it bonds so that the rubbing direction of a board | substrate may orthogonally cross.

  Note that the distance between the pair of substrates may be maintained by scattering spherical spacers, forming columnar spacers made of resin, or including a filler in the sealant 600. The columnar spacer is an organic resin material mainly containing at least one of acrylic, polyimide, polyimide amide, and epoxy, or any one material of silicon oxide, silicon nitride, and silicon oxide containing nitrogen, or a laminate thereof. It is an inorganic material made of a film.

  Next, the substrate is divided. In case of multi-chamfering, each panel is divided. In the case of one-sided chamfering, the separation step can be omitted by attaching a counter substrate that has been cut in advance (FIG. 13D).

  Then, an FPC (Flexible Printed Circuit) is attached through an anisotropic conductor layer using a known technique. The liquid crystal electro-optical device is completed through the above steps. If necessary, an optical film is attached. In the case of a transmissive liquid crystal electro-optical device, the polarizing plate is attached to both the TFT substrate and the counter substrate.

  FIG. 18A shows a top view of the liquid crystal electro-optical device obtained through the above steps, and FIG. 18B shows an example of a top view of another liquid crystal electro-optical device.

  In FIG. 18A, reference numeral 500 denotes a TFT substrate, 625 denotes a counter substrate, 650 denotes a pixel portion, 600 denotes a sealing material, and 801 denotes an FPC. Note that the liquid crystal composition is discharged by a droplet discharge method, and the pair of substrates 500 and 625 is bonded to each other with the sealant 600 under reduced pressure.

  In FIG. 18B, 500 is a TFT substrate, 625 is a counter substrate, 802 is a source signal line driver circuit portion, 803 is a gate signal line driver circuit portion, 650 is a pixel portion, 600a is a first sealant, and 801 is an FPC. It is. Note that the liquid crystal composition is discharged by a droplet discharge method, and the pair of substrates 500 and 625 are bonded to each other with the first sealant 600a and the second sealant 600b. Since the driving circuit portions 802 and 803 do not require liquid crystal, only the pixel portion 650 holds the liquid crystal, and the second sealant 600b is provided to reinforce the entire panel.

  As described above, in this example, a liquid crystal electro-optical device can be manufactured using the liquid crystal composition of the present invention and a TFT having a crystalline semiconductor film. This makes it possible to reduce manufacturing time and manufacturing costs. The liquid crystal electro-optical device manufactured in this embodiment can be used as a display portion of various electronic devices.

  In this embodiment, the top gate type TFT is used as the TFT. However, the present invention is not limited to this structure, and a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT can be used as appropriate. . Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

  Further, this embodiment can be freely combined with any description of the above embodiment modes and embodiments, if necessary.

  In this example, an example of using a droplet discharge method in which a liquid crystal composition is dropped is shown. In this example, a large-area substrate 1110 is used, and examples of manufacturing four panels are shown in FIGS. 14A to 14D, FIGS. 15A to 15B, and FIGS. As shown in FIG.

  FIG. 14A is a cross-sectional view in the middle of liquid crystal layer formation by a dispenser (or ink jet), and a liquid crystal composition 1114 is applied to a droplet discharge device 1116 so as to cover a pixel portion 1111 surrounded by a sealant 1112. Nozzle 1118 is discharged, jetted, or dropped. The droplet discharge device 1116 is moved in the direction of the arrow in FIG. Although the example in which the nozzle 1118 is moved is shown here, the liquid crystal layer may be formed by fixing the nozzle and moving the substrate.

  FIG. 14B is a perspective view. A state in which the liquid crystal composition 1114 is selectively ejected, jetted, or dropped only in a region surrounded by the sealant 1112 and the dropping surface 1115 moves in accordance with the nozzle scanning direction 1113 is shown.

  14C and 14D are enlarged cross-sectional views of a portion 1119 surrounded by a dotted line in FIG. When the viscosity of the liquid crystal composition is high, the liquid crystal composition is continuously discharged and attached while being connected as shown in FIG. On the other hand, when the viscosity of the liquid crystal composition is low, the liquid crystal composition is discharged intermittently, and droplets are dropped as shown in FIG.

  In FIG. 14C, reference numeral 1120 denotes a top gate TFT, and 1121 denotes a pixel electrode. The pixel portion 1111 includes pixel electrodes arranged in a matrix, switching elements connected to the pixel electrodes, here, top gate TFTs, and storage capacitors.

  Although a top gate TFT is used in this embodiment, a bottom gate TFT may be used.

  Here, with reference to FIGS. 15A to 15B and FIGS. 16A to 16B, the flow of panel fabrication will be described below.

  First, a first substrate 1110 having a pixel portion 1111 formed on an insulating surface is prepared. The first substrate 1110 is previously subjected to formation of an alignment film, rubbing treatment, spherical spacer dispersion, columnar spacer formation, or color filter formation. Next, as shown in FIG. 15A, a sealant 1112 is formed at a predetermined position (a pattern surrounding the pixel portion 1111) on the first substrate 1110 with a dispenser device or an inkjet device under an inert gas atmosphere or under reduced pressure. . The translucent sealing material 1112 includes a filler (diameter 6 μm to 24 μm) and a viscosity of 40 to 400 Pa · s. It is preferable to select a material that does not dissolve in the liquid crystal that comes into contact later. As the sealing material 1112, an acrylic photo-curing resin or an acrylic thermosetting resin may be used. In addition, since the sealing pattern is simple, the sealing material 1112 can be formed by a printing method.

  Next, a liquid crystal composition 1114 is dropped by an inkjet method into a region surrounded by the sealant 1112 (FIG. 15B). As the liquid crystal composition 1114, those shown in Examples 1 to 4 may be used. In addition, since the viscosity of the liquid crystal composition can be set by adjusting the temperature, it is suitable for the ink jet method. A necessary amount of the liquid crystal composition 1114 can be held in a region surrounded by the sealant 1112 without waste by an inkjet method.

  Next, the first substrate 1110 provided with the pixel portion 1111 and the second substrate 1031 provided with the counter electrode and the alignment film are bonded together under reduced pressure so that bubbles do not enter. Here, the sealing material 1112 is cured by performing ultraviolet irradiation or heat treatment at the same time as bonding. In addition to ultraviolet irradiation, heat treatment may be performed.

  FIGS. 17A and 17B illustrate an example of a bonding apparatus that can perform ultraviolet irradiation or heat treatment at the time of bonding or after bonding.

  17A and 17B, reference numeral 1041 denotes a first substrate support, 1042 a second substrate support, 1044 a translucent window, 1048 a lower surface plate, and 1049 an ultraviolet light source. It is. 17A to 17B, FIGS. 14A to 14D, 15A to 15B, and 16A to 16B. The same reference numerals are used for portions corresponding to.

  The lower surface plate 1048 has a built-in heater, and cures the sealing material 1112. The second substrate support 1042 is provided with a light-transmitting window 1044 so that ultraviolet light from the light source 1049 can pass therethrough. Although not shown here, the substrate is aligned through the window 1044. In addition, the second substrate 1031 to be the counter substrate is cut into a desired size in advance, and is fixed to the second substrate support 1042 with a vacuum chuck or the like. FIG. 17A shows a state before bonding.

  At the time of bonding, the first substrate support base 1041 and the second substrate support base 1042 are lowered, and then the first substrate 1110 and the second substrate 1031 are bonded together by applying pressure, and cured by irradiating ultraviolet light as it is. Let The state after bonding is shown in FIG.

  Next, the first substrate 1110 is cut using a cutting device such as a scriber device, a breaker device, or a roll cutter (FIG. 16B). Thus, four panels can be manufactured from one substrate. Then, the FPC is pasted using a known technique.

  Note that a glass substrate or a plastic substrate can be used as the first substrate 1110 and the second substrate 1031.

  Further, this embodiment can be freely combined with any description of the above embodiment modes and embodiments, if necessary.

  As the liquid crystal electro-optical device to which the present invention is applied, a video camera, a digital camera, a goggle type display, a navigation system, an audio playback device (car audio component, etc.), a computer, a game machine, a portable information terminal (mobile computer, mobile phone, Portable game machines, electronic books, etc.), image playback devices equipped with recording media (specifically, devices equipped with a display capable of playing back recording media such as Digital Versatile Disc (DVD) and displaying the images), etc. Is mentioned. Specific examples of these liquid crystal electro-optical devices are shown in FIGS. 19, 20, 21A to 21B, 22A to 22B, 23, and 24A. 24 (E).

  FIG. 19 shows a liquid crystal module in which a display panel 5001 and a circuit board 5011 are combined. A circuit board 5011 is provided with a control circuit 5012, a signal dividing circuit 5013, and the like, and is electrically connected to the display panel 5001 through a connection wiring 5014.

  The display panel 5001 includes a pixel portion 5002 provided with a plurality of pixels, a scanning line driver circuit 5003, and a signal line driver circuit 5004 for supplying a video signal to the selected pixel. Note that in the case of manufacturing a liquid crystal module, the display panel 5001 may be manufactured by using the above embodiment modes and examples. In addition, a control driver circuit portion such as the scan line driver circuit 5003 or the signal line driver circuit 5004 can be manufactured using the TFT formed in the above embodiment.

  A liquid crystal television receiver can be completed with the liquid crystal module shown in FIG. FIG. 20 is a block diagram showing a main configuration of the liquid crystal television receiver. A tuner 5101 receives a video signal and an audio signal. The video signal includes a video signal amplifying circuit 5102, a video signal processing circuit 5103 that converts a signal output from the video signal into a color signal corresponding to each color of red, green, and blue, and the video signal as input specifications of the driver IC. Processing is performed by a control circuit 5012 for conversion. The control circuit 5012 outputs a signal to each of the scanning line side and the signal line side. In the case of digital driving, a signal dividing circuit 5013 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

  Of the signals received by the tuner 5101, the audio signal is sent to the audio signal amplifier circuit 5105, and the output is supplied to the speaker 5107 through the audio signal processing circuit 5106. The control circuit 5108 receives control information on the receiving station (reception frequency) and volume from the input unit 5109 and sends a signal to the tuner 5101 and the audio signal processing circuit 5106.

  As shown in FIG. 21A, a television receiver can be completed by incorporating a liquid crystal module into a housing 5201. A display screen 5202 is formed by the liquid crystal module. In addition, a speaker 5203, an operation switch 5204, and the like are provided as appropriate.

  FIG. 21B shows a television receiver that can carry only a display wirelessly. A housing and a signal receiver are incorporated in the housing 5212, and the display portion 5213 and the speaker portion 5217 are driven by the battery. The battery can be repeatedly charged by a charger 5210. The charger 5210 can transmit and receive a video signal, and can transmit the video signal to a signal receiver of the display. The housing 5212 is controlled by operation keys 5216. The device illustrated in FIG. 21B can also be called a video / audio two-way communication device because a signal can be sent from the housing 5212 to the charger 5210 by operating the operation key 5216. In addition, by operating the operation key 5216, a signal is transmitted from the housing 5212 to the charger 5210, and further, a signal that can be transmitted by the charger 5210 is received by another electronic device, thereby controlling communication of the other electronic device. It can be said to be a general-purpose remote control device. The present invention can be applied to the display portion 5213, a control circuit portion, and the like.

  By using the present invention for the television receiver shown in FIGS. 19, 20, 21A to 21B, a television receiver having a display portion with high-speed response can be manufactured.

  Of course, the present invention is not limited to a television receiver, and is applied to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

  FIG. 22A shows a module in which a display panel 5301 and a printed wiring board 5302 are combined. The display panel 5301 includes a pixel portion 5303 provided with a plurality of pixels, a first scan line driver circuit 5304, a second scan line driver circuit 5305, and a signal line driver circuit that supplies a video signal to the selected pixel. 5306 is provided.

  The printed wiring board 5302 is provided with a controller 5307, a central processing unit (CPU) 5308, a memory 5309, a power supply circuit 5310, an audio processing circuit 5311, a transmission / reception circuit 5312, and the like. The printed wiring board 5302 and the display panel 5301 are connected by a flexible wiring board (FPC) 5313. The printed wiring board 5302 may be provided with a capacitor, a buffer circuit, or the like so that noise is added to the power supply voltage or the signal or the rise of the signal is not slowed. The controller 5307, the audio processing circuit 5311, the memory 5309, the CPU 5308, the power supply circuit 5310, and the like can be mounted on the display panel 5301 using a COG (Chip On Glass) method. The scale of the printed wiring board 5302 can be reduced by the COG method.

  Various control signals are input and output through an interface (I / F) unit 5314 provided in the printed wiring board 5302. An antenna port 5315 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 5302.

  FIG. 22B is a block diagram of the module shown in FIG. This module includes a VRAM 5316, a DRAM 5317, a flash memory 5318, and the like as the memory 5309. The VRAM 5316 stores image data to be displayed on the panel, the DRAM 5317 stores image data or audio data, and the flash memory stores various programs.

  The power supply circuit 5310 supplies power for operating the display panel 5301, the controller 5307, the CPU 5308, the sound processing circuit 5311, the memory 5309, and the transmission / reception circuit 5312. Depending on the specifications of the panel, the power supply circuit 5310 may be provided with a current source.

  The CPU 5308 includes a control signal generation circuit 5320, a decoder 5321, a register 5322, an arithmetic circuit 5323, a RAM 5324, an interface 5319 for the CPU 5308, and the like. Various signals input to the CPU 5308 through the interface 5319 are temporarily held in the register 5322 and then input to the arithmetic circuit 5323, the decoder 5321, and the like. The arithmetic circuit 5323 performs an operation based on the input signal and designates a place to send various commands. On the other hand, the signal input to the decoder 5321 is decoded and input to the control signal generation circuit 5320. The control signal generation circuit 5320 generates a signal including various instructions based on the input signal, and a location designated by the arithmetic circuit 5323, specifically, a memory 5309, a transmission / reception circuit 5312, an audio processing circuit 5311, a controller 5307, and the like. Send to.

  The memory 5309, the transmission / reception circuit 5312, the sound processing circuit 5311, and the controller 5307 operate according to the received commands. The operation will be briefly described below.

  A signal input from the input unit 5325 is sent to the CPU 5308 mounted on the printed wiring board 5302 via the I / F unit 5314. The control signal generation circuit 5320 converts the image data stored in the VRAM 5316 into a predetermined format according to a signal sent from the input unit 5325 such as a pointing device or a keyboard, and sends the image data to the controller 5307.

  The controller 5307 performs data processing on a signal including image data sent from the CPU 5308 in accordance with the specifications of the panel, and supplies the processed signal to the display panel 5301. Further, the controller 5307 generates an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and a switching signal L / R based on the power supply voltage input from the power supply circuit 5310 and various signals input from the CPU 5308. Generated and supplied to the display panel 5301.

  In the transmission / reception circuit 5312, signals transmitted / received as radio waves in the antenna 5328 are processed. Specifically, high-frequency signals such as an isolator, a band-pass filter, a VCO (Voltage Controlled Oscillator), an LPF (Low Pass Filter), a coupler, and a balun. Includes circuitry. A signal including audio information among signals transmitted and received in the transmission / reception circuit 5312 is sent to the audio processing circuit 5311 in accordance with a command from the CPU 5308.

  A signal including audio information sent in accordance with a command from the CPU 5308 is demodulated into an audio signal by the audio processing circuit 5311 and sent to the speaker 5327. An audio signal sent from the microphone 5326 is modulated in the audio processing circuit 5311 and sent to the transmission / reception circuit 5312 in accordance with a command from the CPU 5308.

  The controller 5307, the CPU 5308, the power supply circuit 5310, the sound processing circuit 5311, and the memory 5309 can be mounted as a package of this embodiment. This embodiment can be applied to any circuit other than a high-frequency circuit such as an isolator, a band pass filter, a VCO (Voltage Controlled Oscillator), an LPF (Low Pass Filter), a coupler, and a balun.

  FIG. 23 illustrates one mode of a cellular phone including the module illustrated in FIGS. 22 (A) to 22 (B). The display panel 5301 is incorporated in a housing 5330 so as to be detachable. The shape and size of the housing 5330 can be changed as appropriate in accordance with the size of the display panel 5301. The housing 5330 to which the display panel 5301 is fixed is fitted to the printed board 5331 and assembled as a module.

  The display panel 5301 is connected to the printed board 5331 through the FPC 5313. A signal processing circuit 5335 including a speaker 5332, a microphone 5333, a transmission / reception circuit 5334, a CPU, a controller, and the like is formed over the printed circuit board 5331. Such a module is combined with the input means 5336, the battery 5337, and the antenna 5340 and stored in the housing 5339. The pixel portion of the display panel 5301 is arranged so that it can be seen from an opening window formed in the housing 5339.

  The mobile phone according to the present embodiment can be transformed into various modes according to the function and application. For example, the above-described effects can be obtained even when a plurality of display panels are provided, or the housing is divided into a plurality of cases and is opened and closed by a hinge.

  By using the present invention for the mobile phone shown in FIGS. 22A to 22B and FIG. 23, a mobile phone having a display portion with high-speed response can be manufactured.

  FIG. 24A illustrates a liquid crystal display which includes a housing 6001, a support base 6002, a display portion 6003, and the like. The present invention can be applied to the display portion 6003 using the structure of the liquid crystal module shown in FIG. 19 and the display panel shown in FIG.

  By using the present invention, a display having a display portion with high-speed response can be manufactured.

  FIG. 24B illustrates a computer which includes a main body 6101, a housing 6102, a display portion 6103, a keyboard 6104, an external connection port 6105, a pointing mouse 6106, and the like. The present invention can be applied to the display portion 6103 using the structure of the liquid crystal module shown in FIG. 19 and the display panel shown in FIG.

  By using the present invention, a computer having a high-speed response display portion can be manufactured.

  FIG. 24C illustrates a portable computer, which includes a main body 6201, a display portion 6202, a switch 6203, operation keys 6204, an infrared port 6205, and the like. The present invention can be applied to the display portion 6202 by using the liquid crystal module shown in FIG. 19 and the structure of the display panel shown in FIG.

  By using the present invention, a computer having a high-speed response display portion can be manufactured.

  FIG. 24D illustrates a portable game machine including a housing 6301, a display portion 6302, speaker portions 6303, operation keys 6304, a recording medium insertion portion 6305, and the like. The present invention can be applied to the display portion 6302 using the structure of the liquid crystal module shown in FIG. 19 and the display panel shown in FIG.

  By using the present invention, a game machine having a high-speed response display portion can be manufactured.

  FIG. 24E shows a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 6401, a housing 6402, a display portion A6403, a display portion B6404, and a recording medium (DVD or the like). A reading unit 6405, operation keys 6406, a speaker unit 6407, and the like are included. The display portion A 6403 mainly displays image information, and the display portion B 6404 mainly displays character information. The present invention can be applied to the display portion A 6403, the display portion B 6404, the control circuit portion, and the like by using the structure of the liquid crystal module shown in FIG. 19 and the display panel shown in FIG. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.

  By using the present invention, it is possible to manufacture the present image reproducing device having a display section with high-speed response.

  Display devices used for these liquid crystal electro-optical devices can use not only a glass substrate but also a heat-resistant plastic substrate depending on the size, strength, or purpose of use. As a result, the weight can be further reduced.

  It should be noted that the examples shown in the present embodiment are only examples and are not limited to these applications.

  This embodiment can be implemented by being freely combined with any description of the above embodiment modes and embodiments.

(A) Schematic of the liquid crystal electro-optical device of the present invention using columnar spacers. (B) Schematic of the liquid crystal electro-optical device of the present invention using a spherical spacer. (A) Schematic of the liquid crystal electro-optical device of the present invention using columnar spacers. (B) Schematic of the liquid crystal electro-optical device of the present invention using a spherical spacer. FIG. 6 is a diagram illustrating response time characteristics with respect to an addition amount of an inert liquid containing fluorine in the liquid crystal electro-optical device according to the first embodiment of the present invention. FIG. 10 is a diagram illustrating response time characteristics with respect to an addition amount of an inert liquid containing fluorine in the liquid crystal electro-optical device according to the second embodiment of the present invention. FIG. 10 is a graph showing response time characteristics with respect to the addition amount of an inert liquid containing fluorine in the liquid crystal electro-optical device according to Example 3 of the present invention. FIG. 10 is a diagram illustrating response time characteristics with respect to the addition amount of an inert liquid containing fluorine in the liquid crystal electro-optical device according to Example 4 of the present invention. 10A and 10B illustrate a manufacturing process of a semiconductor device. 10A and 10B illustrate a manufacturing process of a semiconductor device. 10A and 10B illustrate a manufacturing process of a semiconductor device. 6A and 6B show a manufacturing process of a liquid crystal electro-optical device of the invention. 6A and 6B show a manufacturing process of a liquid crystal electro-optical device of the invention. 1 is a diagram showing one pixel of a liquid crystal electro-optical device of the present invention. 6A and 6B show a manufacturing process of a liquid crystal electro-optical device of the invention. 4A and 4B illustrate a manufacturing process of a liquid crystal electro-optical device using the liquid crystal dropping method of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal electro-optical device using the liquid crystal dropping method of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal electro-optical device using the liquid crystal dropping method of the present invention. 4A and 4B illustrate a manufacturing process of a liquid crystal electro-optical device using the liquid crystal dropping method of the present invention. 6A and 6B show a manufacturing process of a liquid crystal electro-optical device of the invention. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied. FIG. 11 illustrates an example of an electronic device to which the present invention is applied.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Substrate 102 Substrate 103 Translucent conductive film 104 Alignment film 105 Sealing material 106 Spacer 106a Columnar spacer 106b Spherical spacer 107 Liquid crystal composition 201 Active matrix substrate 202 Counter substrate 203 Pixel portion 204 Drive circuit 205a Columnar spacer 205b Spherical spacer 206 Sealing material 207 Counter electrode 208 Alignment film 209 Liquid crystal composition 499 Linear laser 500 Substrate 501 Base film 502 Semiconductor film 504 Crystalline semiconductor film 507 Island-like semiconductor film 508 Island-like semiconductor film 509 Island-like semiconductor film 510 Insulating film 511 First Second conductive film 520 Source region or drain region 521 Low concentration impurity region 522 Channel formation region 523 Source region or drain region 524 Channel formation region 525 Source region or drain region 5 6 low-concentration impurity regions 527 channel forming region 530 first interlayer insulating film 531 second interlayer insulating film 540 electrode or wiring 541 electrode or wiring 542 electrode or wiring 543 electrode or wiring 544 electrode or wiring 550 n-channel type TFT
551 p-channel TFT
552 n-channel TFT
553 CMOS circuit 560 Upper gate electrode 561 Upper gate electrode 562 Upper gate electrode 563 Lower gate electrode 564 Lower gate electrode 565 Lower gate electrode 570 Gate electrode 571 Gate electrode 572 Gate electrode 580 Gate insulating film 581 Gate insulating film 582 Gate insulating film 600 Seal Material 600a First sealing material 600b Second sealing material 610 Third interlayer insulating film 623 Pixel electrode 624a Alignment film 624b Alignment film 625 Counter substrate 626a Colored layer 626b Light shielding layer 627 Overcoat layer 628 Counter electrode 629 Liquid crystal composition 630 Gate wiring 631 Capacitance wiring 650 Pixel portion 801 FPC
802 Source signal line driver circuit unit 803 Gate signal line driver circuit unit 1031 Second substrate 1041 First substrate support table 1042 Second substrate support table 1044 Window 1048 Lower surface plate 1049 Light source 1110 First substrate 1111 Pixel unit 1112 Sealing material 1113 Nozzle scanning direction 1114 Liquid crystal composition 1115 Dropping surface 1116 Droplet discharge device 1118 Nozzle 1119 Portion surrounded by dotted line 1120 Top gate TFT
1121 Pixel electrode 5001 Display panel 5002 Pixel unit 5003 Scanning line driving circuit 5004 Signal line driving circuit 5011 Circuit board 5012 Control circuit 5013 Signal dividing circuit 5014 Connection wiring 5101 Tuner 5102 Video signal amplification circuit 5103 Video signal processing circuit 5105 Audio signal amplification circuit 5106 Audio signal processing circuit 5107 Speaker 5108 Control circuit 5109 Input unit 5201 Case 5202 Display screen 5203 Speaker 5204 Operation switch 5210 Charger 5212 Case 5213 Display unit 5216 Operation key 5217 Speaker unit 5301 Display panel 5302 Printed wiring board 5303 Pixel unit 5304 Scanning Line drive circuit 5305 Scanning line drive circuit 5306 Signal line drive circuit 5307 Controller 5308 CPU
5309 Memory 5310 Power supply circuit 5311 Audio processing circuit 5312 Transmission / reception circuit 5313 FPC
5314 I / F Unit 5315 Antenna Port 5316 VRAM
5317 DRAM
5318 Flash memory 5320 Control signal generation circuit 5321 Decoder 5322 Register 5323 Arithmetic circuit 5324 RAM
5325 Input means 5326 Microphone 5327 Speaker 5328 Antenna 5330 Housing 5331 Printed circuit board 5332 Speaker 5333 Microphone 5334 Transmission / reception circuit 5335 Signal processing circuit 5336 Input means 5337 Battery 5339 Case 5340 Antenna 6001 Case 6002 Support base 6003 Display portion 6101 Main body 6102 Case 6103 Display unit 6104 Keyboard 6105 External connection port 6106 Pointing mouse 6201 Main body 6202 Display unit 6203 Switch 6204 Operation key 6205 Infrared port 6301 Case 6302 Display unit 6303 Speaker unit 6304 Operation key 6305 Recording medium insertion unit 6401 Main unit 6402 Case 6403 Display unit A
6404 Display portion B
6405 Recording medium reading unit 6406 Operation key 6407 Speaker unit

Claims (4)

A liquid crystal composition comprising a nematic liquid crystal and an inert liquid,
The inert liquid _body, the liquid crystal composition, characterized in that _{C 8 F 16 O, C 8} F 18, 10wt% or more of any of C _{6 F 14} to the liquid crystal composition, containing the following 60 wt% object. A liquid crystal composition comprising a nematic liquid crystal and an inert liquid,
The inert liquid _body, the liquid crystal composition, characterized in that _{C 8 F 16 O, C 8} F 18, C 6 20wt% or more of any of the _{F 14} to the liquid crystal composition, containing the following 30 wt% object. A liquid crystal electro-optical device having a liquid crystal composition containing a nematic liquid crystal and an inert liquid between a pair of substrates having a transparent electrode,
The inert liquid _is a liquid crystal electro-optical, characterized in that _{C 8 F 16 O, C 8} F 18, 10wt% or more of any of C _{6 F 14} to the liquid crystal composition, containing the following 60 wt% apparatus. A liquid crystal electro-optical device having a liquid crystal composition containing a nematic liquid crystal and an inert liquid between a pair of substrates having a transparent electrode,
The inert liquid _is a liquid crystal electro-optical, characterized in that _{C 8 F 16 O, C 8} F 18, C 6 20wt% or more of any of the _{F 14} to the liquid crystal composition, containing the following 30 wt% apparatus.

Images