JP5088709B2 - ELECTRO-OPTICAL DEVICE, SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL DEVICE SUBSTRATE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to an electro-optical device configured using a thin film, a substrate for an electro-optical device used in the electro-optical device, and a semiconductor device. The present invention also relates to an electronic apparatus using these manufacturing methods and electro-optical devices.

  In recent years, a pattern forming method using an inkjet process (manufacturing method using a droplet discharge method) has attracted attention in a manufacturing process of an organic electroluminescence (hereinafter referred to as EL) element or a color filter. For example, in an electro-optical device using an organic EL thin film, this manufacturing method is used to form a plurality of pixels in a predetermined pattern on a display substrate and perform display by controlling light emission in each pixel. Yes. Hereinafter, a thin film forming method using an ink jet process will be described by taking an electro-optical device using an organic EL thin film as an example.

FIG. 28 is a cross-sectional view of a main part of a pixel portion of a conventional electro-optical device, and FIG. 29 is a diagram schematically illustrating a drying process when forming a thin film in the conventional electro-optical device. As described above, the organic EL thin film is prepared for each predetermined section in a predetermined pattern on the substrate. On the substrate, partition members (hereinafter referred to as “partition walls”) 242 having convex cross sections are adjacent to each other so that the liquid material (thin film material liquid) discharged from the organic EL thin film by the inkjet process does not flow out to adjacent pixels. Are provided between the pixels. This partition is composed of a first partition 243 on a pixel electrode (not shown) formed on the substrate 260 and a second partition 244 formed thereon, and surrounds the droplet filling region R _S. Formed. Here, the opening of the lower surface of the second partition 244 is made larger than the opening of the upper surface of the first partition 243, and the cross section thereof is configured in a staircase pattern. The first partition 243 and the pixel electrode are formed of an inorganic material having lyophilicity with respect to the thin film material liquid, and the second partition 244 is an organic material having liquid repellency with respect to the thin film material liquid. Formed by.

Each light emitting region surrounded by such partition walls is filled with a thin film material solution using an inkjet process. In the initial state, the surface of the droplet is raised from the upper surface of the second partition 244 as shown by a line segment L1 in FIG. However, by drying the thin film material liquid, the surface of the droplet gradually falls as indicated by line segment L1 to line segment L4, and finally a thin film 245 whose surface is indicated by line segment L4 is formed. It is formed. It should be noted that in this drying course, the droplet is repelled by the surface of the second partition wall 244, the fit on the surface of the surface and the pixel electrode of the first partition wall 243, substantially in the droplet filling region R _S on the pixel electrode A flat organic EL thin film is formed (see Patent Document 1).

Japanese Patent No. 3328297

  However, in the above method, as shown in FIG. 30, when forming a light emitting region having a long and semi-circular shape at both ends, or when forming a light emitting region having corners as shown in FIG. However, there is a problem that an organic EL thin film having a uniform thickness cannot be formed on the pixel electrode.

  That is, as shown in FIG. 30, when the light emitting region is an elongated ellipse, the thin film material droplet 250 filled by the inkjet process spreads over the entire region initially surrounded by the partition wall 242 (left in the drawing) Thereafter, the droplets gradually return to a spherical shape due to surface tension, and accumulate in the vicinity of the center in the partition 242. Also, as shown in FIG. 31, when the droplets are filled in the partition walls 242 having the corners, the thin film material droplets 250 spread over the entire region initially surrounded by the partition walls 242 (the left side in the figure). Similarly, it accumulates at the center of the region. Accordingly, in any case, the organic EL thin film is formed at the periphery of the light emitting region, that is, in the vicinity of both ends in the longitudinal direction in the case of an elongated light emitting region, and in the vicinity of the corner in the case of a light emitting region having corners. The film thickness is reduced, and the film thickness is increased in the center of the light emitting region. As a result, there arises a problem that non-uniformity in emission luminance occurs in one pixel due to the variation in film thickness.

  The present invention has been made in view of the above problems, and has a structure in which a functional thin film layer can be formed with a uniform film thickness and a uniform film quality in a partition region surrounded by a partition wall, and thus has a light emission luminance. It is an object of the present invention to provide an electro-optical device capable of displaying with good uniformity and an electronic apparatus using the same. Another object of the present invention is to provide a manufacturing method for manufacturing these.

  In order to solve the above-described problems and achieve the object, an electro-optical device according to the present invention is an electro-optical device in which a thin film is formed on a thin film forming surface surrounded by a partition partitioning a predetermined region. The partition member includes a first partition wall having a lyophilic surface and a second partition wall formed on the first partition wall and having a liquid repellency. It has an exposed portion that is not covered with two barrier ribs, and a functional thin film layer is provided in a region surrounded by the first barrier rib and the second barrier rib.

  In the electro-optical device according to the present invention, the second partition is laminated on the first partition whose surface is lyophilic with respect to the thin film material liquid so that a predetermined region of the first partition is exposed. To do. Thus, by making the surface of the first partition lyophilic, the wettability between the thin film material solution and the surface of the first partition can be improved. In addition, when the thin film material liquid is filled, the droplets spread uniformly and reliably in the region surrounded by the first partition wall, so that the thin film can be formed uniformly. Furthermore, since the surface of the second partition wall is made liquid repellent, the thin film material liquid can be easily separated from the second partition wall during drying, and even if the amount of the thin film material solution exceeding the height of the second partition wall is filled. The thin film material liquid does not flow out of the second partition due to the surface tension of the thin film material liquid.

  Furthermore, in the present invention, since the exposed portion of the lyophilic first partition wall has a predetermined shape in a predetermined region, the exposed portion of the first partition wall is a large portion or a special shape portion. Then, the thin film material liquid is dried while being strongly pulled by the exposed portion of the first partition. This prevents the thin film material liquid from being collected at the center of the region surrounded by the first and second partitions due to surface tension. As a result, the drying of the thin film material liquid is completed without causing a variation in film thickness between the central portion and the peripheral portion of the region surrounded by the first partition and the second partition.

  The thin film thus formed is in a state where the film thickness is uniform throughout the region surrounded by the first partition wall and the second partition wall, so that a functional thin film layer (light emitting layer) with a uniform film thickness can be obtained. In addition, there is no non-uniformity or variation in the light emission luminance within the pixel due to variations in the film thickness of the thin film. Therefore, the electro-optical device according to the present invention has an effect of providing a high-quality electro-optical device without quality deterioration.

  In order to solve the above-described problems and achieve the object, an electro-optical device according to the present invention is an electro-optical device in which a thin film is formed on a thin-film forming surface surrounded by a partition partitioning a predetermined region. A first partition having a flat surface substantially parallel to the thin film forming surface and not covered by the second partition and having a lyophilic surface, and is laminated on the first partition. In the region surrounded by the first partition and the second partition, the exposed surface of the flat surface of the first partition is different in the predetermined region and the surface has a liquid repellency. And a functional thin film layer formed thereon.

  In this invention, it comprises so that the exposed area of the flat surface of a 1st partition may differ in a predetermined area | region. In the portion where the exposed area of the flat surface of the first partition wall is large, the thin film material liquid is dried while being strongly pulled toward the flat surface side of the first partition wall. This prevents the thin film material liquid from being collected at the center of the region surrounded by the first partition and the second partition due to the surface tension, and the thin film material liquid is stored in the region surrounded by the first partition and the second partition. It dries without causing a variation in film thickness between the central part and the peripheral part.

  As a result, since the thin film has a uniform thickness up to every corner of the region surrounded by the first partition and the second partition, a functional thin film layer (light emitting layer) with a uniform thickness can be obtained. Therefore, there is no non-uniformity or variation in the light emission luminance within the pixel due to the film thickness variation. Therefore, the electro-optical device according to the present invention has an effect of providing a high-quality electro-optical device without quality deterioration.

  Further, according to a preferred aspect of the present invention, the first partition is formed such that the thin film forming surface surrounded by the partition has a corner, and the exposed area of the flat surface of the first partition near the corner is The second partition is formed so as to be larger than the exposed area of the flat surface of the first partition in the portion other than the vicinity of the corner. As a result, a thin film with good film thickness uniformity can be formed up to every corner in the region having the corners surrounded by the partition walls. For example, in a pixel of an organic EL display device having corners, a functional thin film layer (light emitting layer) with good film thickness uniformity can be reliably formed. As a result, there is an effect that it is possible to provide a high-quality electro-optical device that does not deteriorate in quality due to variations in the thickness of the functional thin film layer (light emitting layer).

  Further, according to a preferred aspect of the present invention, the opening of the second partition near the corner is arcuate, and the inclination angle of the second partition near the corner is equal to the inclination angle of the portion other than the vicinity of the corner. The second partition is formed so as to be smaller than that. That is, the inclination angle of the substantially arc-shaped second partition formed in the vicinity of the corner is formed to be smaller than the inclination angle of the second partition formed in a portion other than the vicinity of the corner. At this time, when the second partition is formed from a liquid containing an organic resin, the stress applied to the arc portion is stronger than the stress applied to the linear portion as the compressive stress of the second partition material. The inclination angle of the second partition wall formed in a substantially arc shape in the vicinity of the corner of the opening is smaller than in the vicinity of the portion and the short side. As a result, the distance between the liquid surface containing the thin film material and the thin film formation region surrounded by the first partition can be increased. Therefore, the thin film material liquid is prevented from collecting at the center of the thin film forming surface due to surface tension.

  According to a preferred aspect of the present invention, the first partition is formed so that the thin film forming surface surrounded by the partition has an elongated shape, and the flat surface of the first partition near both ends in the longitudinal direction of the elongated shape is formed. The second partition is formed such that the exposed area is larger than the exposed area of the flat surface of the first partition in a portion other than the vicinity of both ends. As a result, a thin film can be easily and reliably formed with good film thickness uniformity up to every corner of the elongated region surrounded by the partition walls. For example, in a pixel having an elongated shape that is a combination of a semicircle and a rectangle, a functional thin film layer (light-emitting layer) can be reliably formed in a state where the film thickness is uniform to every corner in the pixel region. As a result, it is possible to provide a high-quality electro-optical device that does not deteriorate in quality due to variations in the thickness of the functional thin film layer (light emitting layer).

  According to a preferred aspect of the present invention, the opening of the second partition wall in the vicinity of both ends in the longitudinal direction of the elongated shape has an arc shape, and the inclination angle of the second partition wall in the vicinity of both ends in the longitudinal direction of the elongated shape is The second partition is formed so as to be smaller than the inclination angle of the portion other than the vicinity of the both end portions. That is, the inclination angle of the substantially arc-shaped second partition wall formed in the vicinity of both ends of the elongated shape in the longitudinal direction is compared with the inclination angle of the second partition wall formed in the vicinity of the elongated straight line portion (long side portion). Forming low. For example, when the second partition is formed from a liquid containing an organic resin, the stress applied to the arc portion is stronger than the stress applied to the linear portion in the compressive stress of the second partition material. Part), the inclination angle of the second partition formed in a substantially arc shape at both ends in the longitudinal direction of the elongated shape becomes smaller. By doing so, the distance between the liquid surface containing the thin film material and the thin film formation region surrounded by the first partition wall can be increased, so that the thin film material liquid is collected at the center of the thin film formation surface due to surface tension. Is prevented.

  In order to solve the above-described problems and achieve the object, the present invention provides an electro-optical device in which a thin film is formed on a thin film forming surface surrounded by a partition partitioning a predetermined region, the partition member Has a slope part which extends a part of the first partition wall layer and is not covered with the second partition wall, and has a lyophilic surface on the first partition wall, and is laminated on the first partition wall, and There is provided an electro-optical device characterized in that a surface is composed of a second partition wall having liquid repellency, and a functional thin film layer is provided in a region surrounded by the first partition wall and the second partition wall.

Since the surface area of the first partition wall layer in the partition region can be increased by providing the first partition layer having the sloped portion facing the partition region in this way, a functional thin film layer (charge transport) can be provided by arranging a liquid material. When the layer or the light emitting layer is formed, the liquid material can be satisfactorily held at the outer peripheral portion of the partition region where the slope portion is disposed. As a result, the material liquid can be prevented from being deformed into a spherical shape in the partitioned region, and a functional thin film layer having a uniform thickness can be formed in the partitioned region.
Further, since the first partition wall layer extending in the partition region has an inclined shape, the surface area can be increased while suppressing the protruding length of the first partition layer in the surface direction of the partition region. Therefore, a large area for forming the functional thin film can be secured. In particular, when the functional thin film is a light emitting element, it is effective in obtaining a bright display. Furthermore, it is possible to provide a high-quality electro-optical device that does not deteriorate in quality due to variations in the thickness of the functional thin film layer.

  According to a preferred aspect of the present invention, the slope portion is provided along a peripheral end portion of the partition region. According to this configuration, since the material liquid can be held by the first partition layer on the entire periphery of the edge of the partition region, the uniformity of the formed functional layer can be further improved.

  According to another preferred aspect of the present invention, the slope portion may be provided at an end portion in the major axis direction of the partition region in plan view. In such a configuration, the partition region is formed in a substantially rectangular shape in plan view, and the inclined surface portion is provided along the short side end of the partition region. The deformation of the liquid material in the partition region described above is particularly likely to occur when the planar shape of the partition region is long in one direction. Therefore, if the slope portion of the first partition wall layer is provided at the end portion in the major axis direction as in this configuration, the compressive stress applied to the liquid material can be controlled, and the uneven distribution of the liquid material in the partition region can be effectively prevented. . Moreover, the same effect can be acquired also when a slope part is provided along the short side edge of a division area.

  According to another preferred aspect of the present invention, the partition region has a substantially polygonal shape in plan view, and the slope portion corresponds to a top portion that protrudes outward in the planar region of the partition region. The arrangement is assumed. The uneven distribution of the liquid material is also likely to occur in the top portion protruding outward in the planar region of the partition region. Therefore, if the slope portion of the first partition wall layer is arranged corresponding to the top portion as in this configuration, the uneven distribution of the liquid material in the partition region can be effectively prevented.

  The electro-optical device according to the present invention is an electro-optical device having a circuit layer between a base and a partition member, and a convex portion is formed on the surface of the circuit layer at a position overlapping the partition member in a plane. It is characterized by that. According to this configuration, since the slope portion of the first partition wall layer can be formed by the convex portion formed on the surface of the circuit layer, the member for forming the slope portion is provided between the circuit layer and the partition member. There is no need to provide a separate electro-optical device that can be efficiently manufactured.

  According to a preferred aspect of the present invention, it is preferable that the convex portion is formed on the surface of the circuit layer due to the conductive member provided on the circuit layer. According to this configuration, since the convex portion can be formed by a conductive member provided in the circuit layer or an insulating film formed so as to cover the conductive member, for example, when a driving element such as a thin film transistor is provided, A connected scanning line, signal line, or the like can be used as the conductive member. The conductive member may be a dummy wiring that is not connected to the driving element. In the case of the dummy wiring, restrictions on the arrangement, thickness, width, etc. are relaxed compared to the wiring connected to the driving element, so the degree of freedom of arrangement of the convex portions is increased, for example, according to the shape of the partition area Thus, it is possible to easily cope with a change in the position of the slope portion of the first partition wall layer.

  In the electro-optical device according to the aspect of the invention, it is preferable that the first partition layer is mainly composed of an inorganic material and the second partition layer is mainly composed of an organic material. According to this configuration, the first partition layer and the second partition layer having different surface characteristics can be easily obtained.

  The electro-optical device according to the present invention is characterized in that an organic electroluminescence film is formed in the thin film forming step. As a result, an organic electroluminescence film with good film thickness uniformity can be formed, and a high-quality organic EL device free from quality deterioration due to variations in the film thickness of the organic electroluminescence film can be provided.

  In order to solve the above-described problems and achieve the object, a semiconductor device according to the present invention is a semiconductor device in which a thin film is formed on a thin film forming surface surrounded by a partition partitioning a predetermined region. The partition member includes a first partition wall having a lyophilic surface and a second partition wall formed on the first partition wall and having a liquid repellency. The first partition wall is a second partition wall. And a semiconductor thin film layer is provided in a region surrounded by the first partition and the second partition.

  In the semiconductor device according to the present invention, the semiconductor thin film layer is formed in the region surrounded by the first partition and the second partition having the same properties and the same configuration as the electro-optical device described above. Therefore, the obtained thin film is in a state where the film thickness is uniform to every corner of the region surrounded by the first partition wall and the second partition wall, and a semiconductor thin film having a uniform film thickness can be obtained. As a result, there is an effect that it is possible to provide a high-quality semiconductor device without causing non-uniformity and variations in light emission luminance within the pixels due to variations in the thickness of the thin film.

  In order to solve the above-described problems and achieve the object, the substrate for an electro-optical device according to the present invention includes an electro-optical device in which a thin film is formed on a thin film forming surface surrounded by a partition partitioning a predetermined region. An apparatus substrate, wherein the partition member includes a first partition wall having a lyophilic surface and a second partition wall having a liquid-repellent surface formed on the first partition wall. One partition has an exposed portion that is not covered by the second partition, and a functional thin film layer is provided in a region surrounded by the first partition and the second partition.

  In the electro-optical device substrate according to the present invention as described above, the functional thin film layer can be formed in the region surrounded by the first partition and the second partition having the same properties and the same configuration as the electro-optical device described above. A substrate can be provided. Therefore, there is no non-uniformity or variation in the light emission luminance within the pixel due to variations in the thickness of the thin film, and there is an effect that a high-quality electro-optical device substrate can be provided.

  In order to solve the above problems and achieve the object, an electro-optical device manufacturing method according to the present invention includes a first barrier rib having a predetermined exposed region and a lyophilic surface as a thin film forming surface. A first barrier rib forming step formed on the first barrier rib, a second barrier rib forming step of forming a second barrier rib having a liquid repellent surface, and surrounded by the first barrier rib and the second barrier rib. A thin film forming step of filling the region with a thin film material solution and then drying to form a thin film.

  In the electro-optical device manufacturing method according to the present invention, the surface of the first partition is exposed on the first partition whose surface is lyophilic with respect to the thin film material liquid. A second partition is stacked. Since the surface of the first partition is lyophilic, the wettability between the thin film material solution and the surface of the first partition can be improved. In addition, when the thin film material liquid is filled, the droplets spread uniformly and reliably in the region surrounded by the first partition wall, so that the thin film can be formed uniformly. Furthermore, since the surface of the second partition wall is made liquid repellent, the thin film material liquid can be easily separated from the second partition wall during drying, and even if the amount of the thin film material solution exceeding the height of the second partition wall is filled. The thin film material liquid does not flow out of the second partition due to the surface tension of the thin film material liquid.

  Furthermore, in the present invention, since the exposed portion of the lyophilic first partition wall has a predetermined shape in a predetermined region, the exposed portion of the first partition wall is a large portion or a special shape portion. Then, the thin film material liquid is dried while being strongly pulled by the exposed portion of the first partition. This prevents the thin film material liquid from being collected at the center of the region surrounded by the first and second partitions due to surface tension. As a result, the drying of the thin film material liquid is completed without causing a variation in film thickness between the central portion and the peripheral portion of the region surrounded by the first partition and the second partition.

  The thin film thus formed is in a state where the film thickness is uniform throughout the region surrounded by the first partition wall and the second partition wall, so that a functional thin film layer (light emitting layer) with a uniform film thickness can be obtained. In addition, there is no non-uniformity or variation in the light emission luminance within the pixel due to variations in the film thickness of the thin film. Therefore, the electro-optical device according to the present invention has an effect that a high-quality electro-optical device can be manufactured without quality deterioration due to variations in film thickness.

  According to a preferred aspect of the present invention, in the first and second partition formation steps, the formation of the first partition having a flat surface substantially parallel to the thin film formation surface and having a lyophilic surface. Forming a second barrier rib that is laminated on the first barrier rib, the second barrier rib is formed so that the exposed area of the flat surface of the first barrier rib is different within the predetermined region, and the surface has liquid repellency And a process.

  In this invention, it comprises so that the exposed area of the flat surface of a 1st partition may differ in a predetermined area | region. In the portion where the exposed area of the flat surface of the first partition wall is large, the thin film material liquid is dried while being strongly pulled toward the flat surface side of the first partition wall. Then, the thin film material solution is dried while being strongly pulled to the flat surface side of the first partition wall, so that the thin film material solution collects at the center of the region surrounded by the first partition wall and the second partition wall due to surface tension. Is prevented from drying. As a result, the thin film material liquid is completely dried without causing variations in film thickness between the central portion and the peripheral portion of the region surrounded by the first and second partitions.

  As a result, the semiconductor thin film is formed in a state where the film thickness is uniform as a whole up to every corner of the region surrounded by the first and second partitions. Therefore, according to the method for manufacturing a semiconductor device according to the present invention, a semiconductor thin film with good film thickness uniformity can be easily and reliably formed to every corner of the region surrounded by the partition wall. There is an effect that it is possible to manufacture a high-quality electro-optical device without quality deterioration due to variations in film thickness.

  According to a preferred aspect of the present invention, in the first and second partition forming steps, the formation of the first partition having a sloped portion facing the partition region and having a lyophilic surface, And a second partition forming step of forming a second partition that is laminated on the first partition and has a liquid repellent surface.

According to this manufacturing method, since the first partition wall having the sloped portion facing the partition region is formed in the partition wall forming step, the liquid material disposed in the partition region in the subsequent functional film formation step is made lyophilic. It can hold | maintain by the slope part of the said 1st partition which has, and can wet and spread it uniformly in a division area | region. Therefore, a functional thin film having a uniform film thickness and film quality can be formed in the partition region, and a high-quality electro-optical device can be manufactured.
In addition, the slope portion formed in this manufacturing method can increase the surface area of the extended portion while suppressing the extension length of the first partition wall layer in the surface direction of the substrate, so that the functional layer formation region is narrowed. Therefore, uniform wettability of the liquid material can be ensured.

  According to a preferred aspect of the present invention, an organic electroluminescence film is produced in the thin film forming step. As a result, an organic electroluminescence film with good film thickness uniformity can be formed, and a high-quality organic EL device free from quality deterioration due to variations in the film thickness of the organic electroluminescence film can be provided.

  In order to solve the above-described problems and achieve the object, a method for manufacturing a semiconductor device according to the present invention includes a first barrier rib having a predetermined exposed region and having a lyophilic surface. A first barrier rib forming step formed on a forming surface; a second barrier rib forming step of forming a second barrier rib formed on the first barrier rib and having a liquid repellent surface; the first barrier rib and the second barrier rib; A thin film forming step of filling a thin film material solution in a region surrounded by a thin film and then drying to form a thin film.

  In the semiconductor device manufacturing method according to the present invention as described above, the semiconductor thin film layer is formed in the region surrounded by the first partition and the second partition having the same properties and the same configuration as the electro-optical device described above. . Therefore, the obtained thin film is in a state where the film thickness is uniform to every corner of the region surrounded by the first partition wall and the second partition wall, and a semiconductor thin film having a uniform film thickness can be obtained. As a result, there is an effect that a high-quality semiconductor device can be manufactured without causing non-uniformity and variation in light emission luminance within the pixel due to variation in film thickness of the thin film.

  In order to solve the above-described problems and achieve the object, a method for manufacturing a substrate for an electro-optical device according to the present invention has a predetermined exposed region and the surface is close to a thin film material liquid. A first barrier rib forming step of forming a liquid first barrier rib on a thin film forming surface; a second barrier rib forming step of forming a second barrier rib on the first barrier rib and having a surface having liquid repellency; And a thin film forming step of filling a region surrounded by the first partition wall and the second partition wall with a thin film material solution and then forming a thin film by drying.

  In the electro-optical device substrate according to the present invention as described above, a functional thin film layer is formed in a region surrounded by the first partition and the second partition having the same properties and the same configuration as the electro-optical device described above. . Therefore, the obtained thin film is in a state in which the film thickness is uniform throughout the area surrounded by the first partition wall and the second partition wall, and a functional thin film having a uniform film thickness can be obtained. As a result, it is possible to manufacture a high-quality electro-optical device that does not cause deterioration in quality within the pixel due to variations in the thickness of the thin film.

  In addition, according to the present invention, an electronic apparatus having the above electro-optical device is provided. Thereby, a higher quality electronic device is realizable.

1 is a plan view illustrating a wiring structure of an electro-optical device according to a first embodiment. 2 is a cross-sectional view illustrating a structure of a pixel region of the electro-optical device illustrated in FIG. FIG. 3 is a plan view schematically showing one pixel in the pixel region. FIG. 4 is a flowchart showing a manufacturing process of the electro-optical device. FIG. 5A is a cross-sectional view illustrating a manufacturing process of the electro-optical device. FIG. 5B is a cross-sectional view illustrating the manufacturing process of the electro-optical device. FIG. 5C is a cross-sectional view illustrating the manufacturing process of the electro-optical device. FIG. 5-4 is a cross-sectional view illustrating the manufacturing process of the electro-optical device. FIG. 5-5 is a plan view illustrating the manufacturing process of the electro-optical device. FIGS. 5-6 is sectional drawing which shows the manufacturing process of an electro-optical apparatus. FIG. 5-7 is a plan view illustrating the manufacturing process of the electro-optical device. FIGS. 5-8 is sectional drawing which shows the manufacturing process of an electro-optical apparatus. FIGS. FIGS. 5-9 is sectional drawing which shows the manufacturing process of an electro-optical apparatus. FIGS. 5-10 is sectional drawing which shows the manufacturing process of an electro-optical apparatus. FIGS. FIGS. 5-11 is sectional drawing which shows the manufacturing process of an electro-optical apparatus. FIGS. 5-12 is sectional drawing which shows the manufacturing process of an electro-optical apparatus. FIG. 6 is a plan view showing another structural example of the pixel region of the electro-optical device. FIG. 7 is a cross-sectional view showing an example of the shape of the recess. FIG. 8 is a cross-sectional view showing an example of the shape of the recess. FIG. 9 is a plan view showing another structural example of the pixel region of the electro-optical device. FIG. 10 is a cross-sectional view of the main part along the line AA ′ in FIG. 9. FIG. 11 is a cross-sectional view illustrating the structure of the pixel region of the electro-optical device according to the second embodiment. FIG. 12 is a plan view schematically showing one pixel in the pixel region. FIG. 13A is a cross-sectional view illustrating the manufacturing process of the electro-optical device. FIG. 13B is a plan view illustrating the manufacturing process of the electro-optical device. FIG. 13C is a cross-sectional view illustrating the manufacturing process of the electro-optical device. FIG. 13D is a plan view illustrating the manufacturing process of the electro-optical device. FIG. 14 is a plan view illustrating another structural example of the pixel region of the electro-optical device. FIG. 15 is a plan view illustrating another structural example of the pixel region of the electro-optical device. FIG. 16 is a plan view illustrating a wiring structure of the electro-optical device according to the third embodiment. FIG. 17 is a plan view illustrating a structure of a pixel region according to the third embodiment. 18 is a cross-sectional view taken along line XX in FIG. 19 is a cross-sectional view taken along line YY of FIG. 20A and 20B are a plan view and a cross-sectional view illustrating another structure example of the pixel region. FIG. 21 is a plan view showing another structural example of the pixel region. FIG. 22 is a cross-sectional view showing another structural example of the pixel region. FIG. 23 is a cross-sectional view showing a manufacturing process of the electro-optical device. FIG. 24 is a cross-sectional view showing a manufacturing process of the electro-optical device. FIG. 25 illustrates an example of an electronic device. FIG. 26 illustrates an example of an electronic device. FIG 27 illustrates an example of an electronic device. FIG. 28 is a cross-sectional view of a main part of a pixel portion of a conventional electro-optical device. FIG. 29 is a diagram schematically showing a thin film forming process in a conventional electro-optical device. FIG. 30 is a diagram schematically illustrating a thin film forming process in a conventional electro-optical device. FIG. 31 is a diagram schematically showing a thin film forming process in a conventional electro-optical device.

  Hereinafter, with reference to the drawings, the electro-optical device, the semiconductor device, the electro-optical device substrate according to the present invention, and the electro-optical device manufacturing method, the semiconductor device manufacturing method, and the electro-optical device substrate manufacturing the same. A method and an electronic device will be described. In the following, an organic electroluminescence (EL) display device using an organic EL thin film that is a semiconductor thin film as a light emitting layer of an electro-optical device will be described as an example. However, the present invention is not limited to the following description. It can be changed as appropriate. In addition, the cross-sectional views of the electro-optical device used in the following examples are schematic, and the relationship between the thickness and width of the layers, the ratio of the thicknesses of the layers, and the like are different from the actual ones.

[Example 1-1]
<Electro-optical device, semiconductor device, substrate for electro-optical device>
FIG. 1 is a schematic plan view of the wiring structure of the electro-optical device according to this example. As shown in this figure, the electro-optical device 1 includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction intersecting the scanning lines 101 at a substantially right angle with a space therebetween, and signal lines 102. A plurality of power supply lines 103 extending in parallel are respectively wired. A pixel region A is provided in a matrix at each intersection of the scanning line 101 and the signal line 102.

  A data drive circuit 104 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning drive circuit 105 including a shift register and a level shifter is connected to the scanning line 101.

  In each of the pixel regions A, a switching TFT 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101, and a storage capacitor cap that holds a pixel signal supplied from the signal line 102 via the switching TFT 112. A driving TFT 113 to which a pixel signal held by the holding capacitor cap is supplied to the gate electrode, a pixel electrode (anode) 41 into which a driving current flows from the power supply line 103 via the driving TFT 113, and the pixel electrode A counter electrode (cathode) 46 paired with 41 and a functional layer 45 sandwiched therebetween are provided. The pixel electrode 41, the counter electrode 46, and the functional layer 45 constitute a light emitting element portion. The functional layer 45 corresponds to an organic EL thin film including a light emitting layer described later.

  In such an electro-optical device 1, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor cap, and according to the state of the holding capacitor cap, The on / off state of the driving TFT 113 is determined. That is, in the light emitting element, the amount of current supplied from the power supply line 103 via the driving TFT 113 changes according to the state of the storage capacitor, and thus the luminance changes according to the amount of current flowing. In this way, the electro-optical device 1 can show a desired display state.

  2 and 3 are cross-sectional views schematically showing the structure of the pixel region A of the electro-optical device according to this example. FIG. 2 is a more detailed structure of the functional layer 45 and the driving TFT 113 in FIG. FIG. FIG. 3 is a plan view schematically showing one pixel in the pixel region A. As shown in FIG. 3, each pixel has a substantially rectangular shape having a long and narrow shape, and has four corners at the periphery. And the area | region enclosed by the 1st partition 43 mentioned later becomes a light emission area | region. In the present invention, the entire region surrounded by a partition wall 42 to be described later is defined as one pixel. The electro-optical device 1 includes a substrate 10, a drive element unit 20 in which active elements such as TFTs and wirings are formed on the substrate 10, and a functional element unit 40 in which an organic EL thin film is formed.

  As the substrate 10, various glass materials, resin materials, ceramic materials including single crystals, metal materials, or the like can be used, and a substrate can be selected according to the application. In FIG. 2, a glass substrate is used as the substrate. The case of doing is given as an example.

The drive element unit 20 includes a switching TFT 112, a drive TFT 113, and other elements and wirings. The driving TFT 113 is formed of island-shaped polysilicon formed at a predetermined position on the base layer 21 made of SiO ₂ or the like formed on the substrate 10. In FIG. 2, a longitudinal sectional view of the driving TFT 113 cut in the longitudinal direction is drawn. The gate electrode 24 of the driving TFT 113 is electrically connected to the drain electrode of the switching TFT 112 shown in FIG. Further, source / drain electrodes 27 are formed in the source region and the drain region of the driving TFT 113 through contact holes 26 formed in the first interlayer insulating film 23 and the second interlayer insulating film 25, respectively. Is done. One of these source / drain electrodes 27 is electrically connected to the power supply line 103 shown in FIG. 1, and the other is connected to the functional element portion via a contact hole 29 formed in the third interlayer insulating film 28. It is electrically connected to 40 pixel electrodes 41. The first to third interlayer insulating films 23, 25, and 28 of the drive element unit 20 are made of an insulating material such as SiO ₂ .

  The functional element unit 40 includes a functional layer 45 made of an organic EL thin film as an organic compound layer including a light emitting layer and a hole injection layer, and a pair of electrodes 41 (anode) and 46 (cathode) for operating the functional layer 45. And a partition wall 42 for forming the functional layer 45 in a predetermined region, and a seal layer 47 for blocking the functional layer 45 from the surrounding atmosphere.

The partition wall 42 is formed on the drive element unit 20 so as to surround a predetermined region, that is, the droplet filling region _RS filled with the thin film material liquid when the functional layer 45 is formed, and the surface thereof is changed to the thin film material liquid. On the other hand, it comprises a first partition wall 43 having good lyophilicity and a second partition wall 44 formed on the first partition wall 43 and having a surface having liquid repellency with respect to the thin film material liquid. The upper opening portion of the first partition wall 43 is formed wider than the lower opening portion. That is, the side surface of the first partition wall 43 is formed to have an inclined portion 43a with respect to a direction perpendicular to the substrate surface. Similarly, the upper opening portion of the second partition wall 44 is formed wider than the lower opening portion. That is, the side surface of the second partition wall 44 is also formed to have an inclined portion 44a with respect to a direction perpendicular to the substrate surface.

  Further, the upper opening portion of the first partition wall 43 is located closer to the center side in the plane of the functional layer 45 than the lower opening portion of the second partition wall 44. In other words, the second partition wall 44 is formed on the first partition wall 43 so that the flat surface 43b of the first partition wall is exposed when viewed from above. That is, as shown in FIG. 2, the cross-sectional shape of the first partition wall 43 and the second partition wall 44 constituting the partition wall 42 is stepped.

  Further, the first partition wall 43 has the flat surfaces 43b and 43b 'of the first partition wall on the outer periphery of the opening, that is, the outer periphery of the functional layer 45. The flat surface 43b is located near the corner of the functional layer 45. It is formed in a substantially arc shape. The flat surface 43b ′ of the first partition wall in the vicinity of the corner portion has a larger area than the flat surface 43b of the first partition wall formed in the vicinity of the straight portion (long side portion, short side portion), and is lyophilic. The area of the first partition wall 43 is secured widely. In the second partition 44, the inclined portion 44a rises along the outer periphery of the flat surfaces 43b and 43b ′ of the first partition, and a flat surface is formed on the outer periphery. The inclination angle of the substantially arc-shaped second partition wall formed at the corner portion of the first partition wall is compared with the inclination angle of the second partition wall formed near the straight portion (long side portion, short side portion) of the opening. It is low. In general, when the second partition is formed from a liquid containing an organic resin, the compressive stress of the second partition material is stronger in the force applied to the arc portion than the stress applied to the straight portion. Therefore, the inclination angle of the second partition formed in a substantially arc shape is smaller from the vicinity of the straight line portion (long side portion, short side) of the opening. By doing in this way, the space | interval of the liquid surface containing a thin film material and the thin film formation area enclosed by the 1st partition can be kept away. As a result, the thin film material liquid can be prevented from collecting at the center of the opening due to surface tension.

The first partition wall 43 is made of an insulating material that is lyophilic with a liquid material for forming a thin film, which will be described later, has good adhesion to the underlying anode 41, and can be easily patterned by photolithography. As such a material, an inorganic material such as SiO ₂ or TiO ₂ can be used. Further, the second partition 44 is made of an insulating material that has liquid repellency with the above-described liquid material, has good adhesion to the underlying first partition 43, and is easily patterned by photolithography. As such a material, for example, an organic material such as polyimide or acrylic can be used.

  The functional layer 45 includes a light emitting layer 45b that emits light and a hole transport layer 45a that transfers holes to the light emitting layer and blocks the transfer of electrons from the light emitting layer. In this embodiment, the case where the functional layer 45 is composed of the light emitting layer 45b and the hole transport layer 45a is taken as an example, but the auxiliary layer may include an electron injection layer, an electron transport layer, a positive layer, and the like. A layer having a function for enhancing light emission in the light-emitting layer, such as a hole blocking layer, an electron blocking layer, or a hole injection layer, may be provided.

  As the light-emitting material constituting the light-emitting layer 45b, a known light-emitting material that becomes fluorescent or phosphorescent can be used. Specifically, (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), polyvinyl carbazole (PVK), polythiophene derivative, polydialkyl Polysilanes such as fluorene (PDAF), polyfluorene benzothiadiazole (PFBT), polyalkylthiophene (PAT), and polymethylphenylsilane (PMPS) are preferably used.

  In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as. Note that the light emitting layer 45b may be configured to emit a single color, or may be configured to emit multiple colors such as red, blue, and green for each pixel. Moreover, it can also be set as the structure which light-emits these intermediate colors. For example, it may be configured to emit six different colors for each pixel, such as printer ink.

  Further, as the hole transporting material constituting the hole transport layer 45a, for example, a polythiophene derivative, a polypyrrole derivative, or a doped body thereof can be used. Specifically, 3,4-polyethylenedioxythiophene / polystyrene sulfonic acid (PEDOT / PSS) dispersion, that is, 3,4-polyethylenedioxythiophene is dispersed in polystyrene sulfonic acid as a dispersion medium. A dispersion liquid in which water is dispersed can be used.

  Using these materials, the thickness of the entire functional layer 45 is formed to be approximately the same as the thickness of the first partition wall 43. The film thickness of the hole transport layer 45a is not more than the thickness of the first partition. Further, the light emitting layer 45b is formed in a state where the film thickness is uniform up to every corner of the region surrounded by the first partition wall 43 (the opening region of the first partition wall 43). That is, the light emitting layer 45b is formed with a uniform film thickness over the entire surface with no film thickness variation such that the film thickness is thick in the vicinity of the center of the light emitting region and the film thickness is thin in the periphery.

  The electrodes 41 and 46 are formed so as to sandwich the functional layer 45 from above and below. Hereinafter, the electrode 41 formed on the substrate 10 side may be referred to as a pixel electrode (anode), and the electrode 46 disposed to face the pixel electrode may be referred to as a counter electrode (cathode).

  When the electro-optical device 1 is a top emission type that emits light from the functional element unit 40 side, the counter electrode (cathode) 46 is formed of a transparent conductive material such as indium tin oxide (hereinafter referred to as ITO). The pixel electrode (anode) 41 is formed of a metal material that is normally used as an electrode. Further, a light transmissive material such as ITO may be used. Furthermore, it is good also as a structure which thinned said electrode material and provided the light transmittance.

When the electro-optical device 1 is a bottom emission type that emits light from the substrate 10 side, the pixel electrode (anode) 41 is formed of a transparent conductive material, and the counter electrode (cathode) 46 is usually used as an electrode. It is made of an opaque metal material as used. For example, it can be composed of a single material such as aluminum (Al), magnesium (Mg), lithium (Li), calcium (Ca), or an alloy material in which the ratio of Mg to Ag is 10: 1. Alternatively, a two-layer or three-layer electrode structure made of the above materials may be used. Specifically, a metal laminated film composed of two layers of Li ₂ O (film thickness of about 5 nm) / Al (film thickness of about 200 nm) or LiF (film thickness of about 0.5 nm) / Al (film thickness of about 200 nm). A metal laminated film composed of two layers or a metal laminated film composed of two layers of MgF 2 (film thickness of about 0.5 nm) / Al (film thickness of about 200 n) can be used.

  Further, when the electro-optical device 1 emits light from both sides of the substrate 10, both the pixel electrode (anode) 41 and the counter electrode (cathode) 46 may be formed of a transparent conductive material.

  The sealing layer 47 is a layer formed on the cathode 46 so that water vapor, oxygen, etc. in the atmosphere do not come into contact with the functional layer 45, and a casing made of a can or a sealing film having a gas barrier property is formed on the organic EL element. It may be provided. As such a sealing material, various known resin materials can be used.

  In the electro-optical device 1 configured as described above, the functional layer 45 has a uniform film thickness throughout the area surrounded by the first partition wall 43, thereby varying the film thickness of the light emitting layer 45 b. There is no non-uniformity or variation in the emission luminance due to the above. Therefore, a high quality electro-optical device is realized by the present invention.

<Electro-optical device, semiconductor device, and method for manufacturing electro-optical device substrate>
Next, a method for manufacturing the electro-optical device according to the present invention will be described. FIG. 4 is a flowchart illustrating a manufacturing process of the electro-optical device 1 according to the present embodiment, and FIGS. 5-1 to 5-12 are cross-sectional views schematically illustrating the manufacturing process. As shown in FIG. 4, the electro-optical device manufacturing method includes a drive element portion forming step (S1), a pixel electrode (anode) forming step (S2), a first partition wall forming step (S3), a second A partition formation step (S4), a lyophilic adjustment step (S5), a functional layer formation step (S6), a counter electrode (cathode) formation step (S7), and a seal layer formation step (S8). Yes.

First, in the drive element portion forming step (S1), as shown in FIGS. 5-1 to 5-2, the wiring such as the scanning line 101 and the signal line 102, the switching TFT 112, the driving TFT 113, and the like are formed on the substrate 10. An active element is formed. For example, when the driving TFT 113 is formed as shown in FIG. 5B, first, the base layer 21 made of SiO ₂ is formed on the substrate 10, and an amorphous silicon film is formed thereon by plasma CVD (Chemical Vapor Deposition). Next, the amorphous silicon film is melted, cooled, and solidified by laser annealing to form a polysilicon film. Then, etching is performed so that only the polysilicon film 22 for the driving TFT 113 is left on the substrate 10.

Further, a first interlayer insulating film 23 is formed so as to cover the polysilicon film 22 and the surface of the substrate 10, and then N ⁺ ions are implanted near the center of the polysilicon film 22 to form an n channel 22a. A gate electrode 24 is formed near the top of the first interlayer insulating film 23 in which the channel 22a is formed. Further, a second interlayer insulating film 25 is formed so as to cover the surface of the gate electrode 24 and the first interlayer insulating film 23, and the first interlayer insulating film 23 and the second interlayer insulating film 25 are penetrated to form a polycrystal. Two contact holes 26 are formed at positions sandwiching the gate electrode 24 so as to reach the silicon film 22. Then, after forming the source electrode / drain electrode 27 around the contact hole 26 and the periphery thereof, a third interlayer insulating film 28 is formed so as to cover the surface of the source / drain electrode 27 and the second interlayer insulating film 25. Form. In this way, the drive element unit 20 is formed.

  Next, in the pixel electrode (anode) formation step (S2), as shown in FIG. 5-3, the contact hole 29 leading to the source or drain electrode 27 is passed through, and then the pixel electrode (anode) is formed on the drive element unit 20. A conductive material to be 41 is formed by sputtering, vapor deposition, or other film forming means. This electrode thin film is preferably formed of a material having lyophilicity with respect to a thin film material to be described later. Thereby, the familiarity with the composition surface filled with the inkjet process mentioned later improves. Then, when the liquid material is filled, the liquid spreads uniformly and reliably on the surface of the pixel electrode (anode) 41, so that a high-quality thin film can be formed.

  Thereafter, using a photo-etching process, the conductive thin film formed as shown in FIG. 5-3 is patterned into a pixel electrode shape to form a pixel electrode (anode) 41. At this time, since the conductive material is also formed in the contact hole 29 formed in the third interlayer insulating film 28, the pixel electrode (anode) 41 of the functional element section 40 and the electrode terminal of the driving TFT 113 are Electrical connection is made through the contact hole 29.

Next, in the first partition formation step (S3), a thin film, for example, a SiO ₂ film, which becomes the first partition 43 is formed on the patterned pixel electrode (anode) 41 and the third interlayer insulating film. Next, as shown in FIGS. 5-4 and 5-5, this SiO ₂ film is etched away at a predetermined position on the pixel electrode (anode) 41, and an opening for forming the functional layer 45 is provided. That is, the first partition wall 43 is left on the periphery of the pixel electrode (anode) 41 so as to surround the formation region of the functional layer 45. In the present embodiment, the opening for forming the functional layer 45 has an elongated rectangular shape as shown in FIG. 5-5, and has a shape having four corners at the peripheral edge. Further, the opening of the first partition wall 43 is formed so that the upper part is wider than the lower part. That is, the side surface of the first partition wall 43 is formed to have an inclined portion 43a with respect to a direction perpendicular to the substrate surface as shown in FIG. 5-4.

  Next, in the second partition forming step (S4), a photosensitive insulating organic material is applied onto the first partition 43 and the pixel electrode (anode) 41, irradiated with ultraviolet rays through the mask, and then developed. As a result, the second partition 44 as shown in FIGS. 5-6 and 5-7 is formed. At this time, the upper opening portion of the second partition wall 44 is formed wider than the lower opening portion. That is, the side surface of the second partition wall 44 is formed to have an inclined portion 44a with respect to a direction perpendicular to the substrate surface. Therefore, as shown in FIGS. 5-6, the cross-sectional shape of the partition wall 42 constituted by the first partition wall 43 and the second partition wall 44 is stepped. The thickness of the second partition wall 44 is not particularly limited, but is determined in consideration of the amount of the composition filled in the functional layer forming process described later, the electrical parasitic capacitance generated between the circuit board and the like. The

  The second partition wall 44 is formed on the first partition wall 43 so that the flat surfaces 43b and 43b 'of the first partition wall are exposed when viewed from above, and the corner of the opening of the first partition wall 43, that is, the functional layer 45. Patterning is performed so that the vicinity of each corner is arcuate. By doing in this way, the first partition flat surface 43b ′ near the corner of the opening has a larger area than the first partition flat surface 43b near the straight line (long side portion, short side portion) of the opening, The area of the lyophilic first partition wall 43 can be increased.

  Next, in the lyophilic adjustment step (S5), a process for adjusting the degree of lyophilicity is performed on the surfaces of the pixel electrode (anode) 41, the first partition wall 43, and the second partition wall 44. . In other words, the pixel electrode (anode) 41 and the first partition wall 43 are subjected to a treatment for enhancing the lyophilicity with respect to the thin film material liquid, and the second partition wall 44 is lyophilic with respect to the thin film material liquid. In other words, a process for improving the liquid repellency is performed. For example, the surface of the pixel electrode (anode) 41 and the first partition wall 43 is subjected to oxygen plasma treatment, UV irradiation treatment, exposure treatment to ozone-containing gas, and the like. Thus, by improving the lyophilicity with respect to the thin film material liquid, the wettability of the thin film material liquid on the surface of the pixel electrode (anode) 41 and the surface of the first partition wall 43 can be improved, which will be described later. The familiarity with the composition of the thin film material liquid filled in the inkjet process is improved. When the thin film material solution is filled, the thin film material solution is easily spread uniformly on the surface of the pixel electrode (anode) 41.

Further, the surface of the second partition 44 is subjected to a fluorine plasma treatment using a gas such as CF ₄ , SF ₆ , or CHF ₃ to make the surface liquid-repellent. Accordingly, when the thin film material liquid filled in the inkjet process described later is dried, the thin film material liquid is easily separated from the second partition wall 44, and the thin film is formed without the liquid material remaining on the surface of the second partition wall 44. be able to. When the pixel electrode (anode) 41 and the first partition wall 43 are made of a material having sufficiently good lyophilicity with respect to the thin film material liquid, this lyophilicity adjustment processing step is not particularly performed. Also good. Similarly, when the second partition wall 44 is made of a material having sufficiently good liquid repellency with respect to the thin film material liquid, this lyophilicity adjustment processing step is not particularly required.

Next, in the functional layer formation step (S6), the functional layer 45 including the light emitting layer 45b and the hole transport layer 45a is formed as shown in FIG. Procedure, the material composition constituting the hole transport layer 45a is dried by filling into droplets filling region R _S, to form a hole transport layer 45a in Figure 5-9. At this time, the amount of the thin film material solution filled in the droplet filling region R _S is adjusted so that the thickness of the hole transport layer 45a after drying is equal to or less than the thickness of the first partition wall 43.

Next, the thin film material liquid containing the material composition constituting the light emitting layer 45b is filled on the hole transport layer 45a in the droplet filling region _RS and dried to emit light as shown in FIG. 5-10. Layer 45b is formed. At this time, similarly to the above, the amount of the thin film material liquid filled in the droplet filling region R _S is adjusted so that the thickness of the functional layer 45 after drying is substantially equal to the thickness of the first partition wall 43.

  In the present invention, as described above, of the flat surface of the first partition wall exposed from the second partition wall, the corner of the opening of the first partition wall 43, that is, the vicinity of the corner of the functional layer 45 is formed into a substantially arc shape, and the flat surface 43b. The vicinity of the corner portion of ′ is designed to have a larger area than the vicinity 43b of the straight line (long side portion, short side portion) of the opening. For this reason, the luminescent material liquid is dried while being strongly pulled toward the outer peripheral side of the opening by the substantially arc-shaped first partition flat surface 43b ′ having a large area, so that the thin film material liquid is centered in the opening by the surface tension. It is prevented from gathering in the part.

Generally, when a thin film changes from a liquid layer to a solid phase, compressive stress is applied to the liquid. As for this compressive stress, the stress applied to the arc portion is stronger than the stress applied to the straight portion. Therefore, a strong compressive stress is applied to the thin film material liquid on the flat surface 43b ′ of the first partition wall which is substantially arc-shaped near the corner of the opening from the vicinity of the straight line (long side, short side) of the opening, The taper angle of the outer edge portion of the thin film material liquid droplet is reduced. By reducing the taper angle, the liquid surface wets and spreads over a wide range, and the thin film material liquid is prevented from collecting at the center of the opening due to surface tension.
As a result, the light emitting layer 45b is formed in a state where the film thickness is uniformly uniform throughout the corners of the region surrounded by the first partition wall 43 (opening region of the first partition wall 43). It is possible to prevent non-uniformity and variation in emission luminance within one pixel due to the variation in film thickness of 45b.

As a result, the hole transport layer 45 a and the light emitting layer 45 b are stacked on the pixel electrode (anode) 41, and the functional layer 45 substantially equal to the thickness of the first partition wall 43 is formed. Incidentally, in the case of forming a plurality of auxiliary layer is dried by filling the desired auxiliary layer similarly droplets filling the thin film material solution containing a composition constituting the region R _S, a plurality of auxiliary layers Can be formed.

  Next, in the counter electrode (cathode) forming step (S7), a thin film to be the counter electrode (cathode) is formed on the functional layer 45 by vapor deposition, sputtering, or other film forming means, and this thin film is formed into a predetermined shape ( By patterning into a counter electrode shape, a counter electrode (cathode) 46 as shown in FIG. 5-11 is formed. The counter electrode (cathode) 46 is made of, for example, a single material such as aluminum (Al), magnesium (Mg), lithium (Li), calcium (Ca), or an alloy in which the ratio of Mg to Ag is Mg: Ag = 10: 1. It can be formed of a material. The counter electrode (cathode) 25 may be configured as a single metal layer, or may be configured as a two-layer metal layer or a three-layer metal layer made of the above materials.

  In the seal layer forming step (S8), as shown in FIG. 5-12, the seal layer 47 is formed on the surface of the substrate 10 on which the functional layer 45 is formed by the above-described steps. The seal layer 47 prevents moisture and oxygen in the atmosphere from coming into contact with the functional layer 45 and the electrode material and deteriorating them. As the sealing material, various resin materials such as a thermosetting epoxy resin and an ultraviolet curable epoxy resin can be used.

  According to the electro-optical device manufacturing method described above, the electro-optical device 1 shown in FIGS. 2 and 3 can be manufactured by performing the steps S1 to S10, and the region within the region surrounded by the partition wall Thus, the light emitting layer 45b (functional layer 45) having a uniform film thickness can be easily and reliably formed to every corner of the peripheral edge. Therefore, it is possible to manufacture a high-quality electro-optical device that does not deteriorate in quality due to variations in the thickness of the light-emitting layer 45b (functional layer 45).

  A substrate in which the drive element unit 20 and a part of the functional element unit 40 (pixel electrode (anode) 41, partition wall 42) are formed on the substrate 10 in the above-described steps up to S5 (or up to S4) is described in this specification. This is called an electro-optical device substrate.

[Example 1-2]
Further, the present invention can be configured as shown in FIG. 6, in the configuration of the pixel shown in FIG. 3, the flat surface 43 b ′ of the substantially arc-shaped first partition formed near the corner of the opening of the first partition 43, that is, near the corner of the functional layer 45. Further, a recess 48 is provided as a liquid reservoir for the thin film material solution. Thus, by providing the recess 48 on the flat surface 43b ′ of the substantially arc-shaped first partition, the thin film material liquid on the flat surface 43b ′ of the first partition is accumulated in the recess 48 when the thin film material liquid is dried. The thin film material liquid is more strongly pulled toward the flat surface 43b ′ side of the substantially arc-shaped first partition wall. As a result, the thin film material liquid dries while being strongly pulled by the substantially arcuate corners, so that the thin film material liquid dries while being prevented from collecting at the center of the opening due to surface tension. As a result, the light emitting layer 45b can be formed in a state where the film thickness is uniform up to the corners of the region surrounded by the first partition wall 43 (the opening region of the first partition wall 43).
Therefore, it is possible to reliably prevent non-uniform emission luminance within one pixel due to variations in the thickness of the light emitting layer 45b, and a high quality electro-optical device can be manufactured.

The shape of the recess 48 is not particularly limited, and can take various forms such as a columnar shape, a prismatic shape, or a dimple shape. Further, the depth of the recess 48 is not particularly limited, and the area of the flat surface 43b ′ of the substantially arc-shaped first partition, the droplet amount of the thin film material liquid filled in the droplet filling region R _S , etc. It can be set appropriately according to the various conditions. That is, the depth of the recess 48 may be up to a midpoint in the thickness direction of the second partition 44 as shown in FIG. 7, and penetrates the second partition 44 and the first partition 43 in the thickness direction as shown in FIG. It is good also as the form which did. However, in this case, it is a condition that the pixel electrode (anode) 41 is not formed below the first partition wall 43. In the case where the recess 48 has a form penetrating the second partition 44 and the first partition 43 in the thickness direction, the functional layer 45 is formed in the recess 48 and the counter electrode (cathode) 46 is formed thereon. This is because there is a possibility of light emission also in the recess 48, which causes unevenness in light emission luminance.

[Example 1-3]
Moreover, it can also be set as a structure as shown in FIG. 9 as said other modification. FIG. 9 shows the pixel configuration shown in FIG. 3 in which the flat surface 43b of the first partition wall in the long side direction of the pixel electrode (anode) 41 having a substantially rectangular shape is eliminated and the periphery of the corner of the pixel electrode (anode) 41 is removed. The flat surface 43b 'of the substantially arc-shaped first partition is formed only on the top. The cross-sectional shape of line segment AA ′ in FIG. 9 is as shown in FIG. 10, and the inclined portion 43a of the first partition wall and the inclined portion 44a of the second partition wall 44 do not have the flat surface 43b of the first partition wall. A continuous side surface is formed in the state. For easy understanding, FIG. 9 shows a state where the counter electrode (cathode) 46 and the seal layer 47 are not formed, that is, the state of the electro-optical device substrate. Further, in FIG. 10, inclined portions 43 a and 44 a of the first partition wall 43 and the second partition wall 44 are shown in the cross-sectional shape along the line segment AA ′ in FIG. 9.

Thus, by forming the substantially arc-shaped flat surface 43 b ′ of the first partition only around the corner of the pixel electrode (anode) 41, the thin film material solution can be removed from the opening when the thin film material solution is dried. Although it is not pulled to the outer peripheral side in the vicinity of the straight line portion (long side portion), it is pulled to the flat surface 43b 'side of the substantially arc-shaped first partition wall. Thus, the thin film material liquid is prevented from collecting at the center of the opening due to surface tension. As a result, the light emitting layer 45b can be formed in a state where the film thickness is uniform up to the corners of the region surrounded by the first partition wall 43 (the opening region of the first partition wall 43).
Accordingly, the light emitting layer 45b having a uniform film thickness can be more reliably formed as a whole, and thus a high-quality electro-optical device that does not have uneven light emission luminance due to variations in the film thickness of the light emitting layer 45b is manufactured. can do.

[Example 2-1]
<Electro-optical device>
11 and 12 are cross-sectional views schematically showing the structure of the pixel region B (FIG. 1) of the electro-optical device 1 according to this example. FIG. 11 shows the functional layer 45 and the driving TFT 113 in FIG. It is sectional drawing which shows the more detailed structure of this part. FIG. 12 is a plan view schematically showing one pixel in the pixel region A. As shown in FIG. 12, one pixel has an elongated shape, and both ends in the longitudinal direction have an arc shape. A region surrounded by a first partition wall 52 to be described later is a light emitting region. The electro-optical device 1 includes a substrate 10, a drive element unit 20 in which active elements such as TFTs and wirings are formed on the substrate 10, and a functional element unit 40 in which an organic EL thin film is formed.

  The functional element unit 40 includes a functional layer 45 including a light emitting layer and a hole injection layer, a pair of electrodes 41 (anode) and 46 (cathode) for operating the functional layer 45, and the functional layer 45 in a predetermined region. A partition wall 51 for forming the functional layer 45 and a seal layer 47 for shielding the functional layer 45 from the surrounding atmosphere are provided.

The partition wall 51 forms a droplet filling region R _S when the functional layer 45 is formed, and the surface of the partition wall 51 has a good lyophilic property with respect to the thin film material liquid. The second partition wall 53 is formed and has a liquid repellency with respect to the thin film material liquid. The upper opening portion of the first partition 52 is formed wider than the lower opening portion. That is, the side surface of the first partition 52 is formed so as to have an inclined portion 52a with respect to a direction perpendicular to the substrate surface. Similarly, the upper opening of the second partition wall 53 is formed wider than the lower opening, and the side surface of the second partition wall 53 is formed so as to be inclined 53a with respect to the direction perpendicular to the substrate surface.

  The upper opening portion of the first partition wall 52 is located closer to the center of the functional layer 45 than the lower opening portion of the second partition wall 53. In other words, the second partition wall 53 is formed on the first partition wall 52 so that the flat surface 52b of the first partition wall is exposed when viewed from above. That is, as shown in FIG. 11, the cross-sectional shapes of the first partition 52 and the second partition 53 constituting the partition 51 are stepped.

  The first partition 52 has flat surfaces 52b and 52b ′ of the first partition on the outer periphery of the opening of the first partition 52, that is, the outer periphery of the functional layer 45. The flat surface of the first partition 52b has substantially semicircular ends in the longitudinal direction of the opening. Here, the flat surface 52b ′ of the first partition wall in the vicinity of both ends in the longitudinal direction of the opening portion has a larger area than the flat surface 52b of the first partition wall formed in the vicinity of the straight line portion (long side portion) of the opening portion. Thus, the area of the first partition wall having a lyophilic surface is secured widely. In the second partition wall 53, the inclined portion 53a rises along the outer periphery of the flat surfaces 52b and 52b ′ of the first partition wall, and a flat surface is formed on the outer periphery portion.

  Further, the width L2 of the flat surface 52b 'of the first partition (the distance between the longitudinal end of the first partition 52 and the lower opening of the second partition 44) L2 is the width of the flat surface 52b of the first partition. (Distance between the long side of the opening of the first partition 52 and the lower opening of the second partition 44) is longer than L1. Thereby, the inclination angle of the second partition wall formed in the substantially arc shape of the functional layer 45 becomes lower than the inclination angle of the straight portion (long side portion) of the opening. Therefore, when the second partition is formed from a liquid containing an organic resin, the compressive stress of the second partition material is stronger than the stress applied to the linear portion, and the stress applied to the arc portion is stronger than the stress applied to the linear portion. From the vicinity of the long side portion, the second partition formed in a substantially arc shape at both ends becomes smaller. By doing in this way, the space | interval of the liquid surface containing a thin film material and the thin film formation area enclosed by the 1st partition can be kept away. Therefore, the thin film material liquid is prevented from collecting at the center of the opening due to surface tension.

  In the pixel region, the thickness of the entire functional layer 45 is formed to be substantially the same as the thickness of the first partition 52, and the thickness of the hole transport layer 45a can be less than or equal to the thickness of the first partition. In addition, the light emitting layer 45b (functional layer 45) has a uniform film thickness as a whole to the corners at both ends in the longitudinal direction in the region surrounded by the first partition 52 (opening region of the first partition 52). The light emitting layer 45b is formed in a state, and the film thickness variation is eliminated such that the film thickness is thick in the vicinity of the center of the light emitting region and the film thickness is small in the peripheral portion, and the film is uniformly formed on the entire surface. As a result, a high-quality electro-optical device that does not cause non-uniform emission luminance within the pixel due to variations in the thickness of the light emitting layer 45b is realized.

<Method of manufacturing electro-optical device>
Next, an example of a method for manufacturing the electro-optical device 1 according to the present embodiment will be described. Since the basic flow of the manufacturing method is the same as that of the above-described first embodiment, only parts different from the first embodiment will be described.

In the first partition formation step (S3), for example, a SiO ₂ film is formed as a thin film to be the first partition 52 on the patterned pixel electrode (anode) 41 and the third interlayer insulating film 28. Next, as shown in FIGS. 13A and 13B, the SiO ₂ film is patterned so that the opening for forming the functional layer 45 is formed at a predetermined position on the pixel electrode (anode) 41. To do. As a result, the first partition wall 52 is formed on the peripheral edge of the pixel electrode (anode) 41 so as to surround the formation region of the functional layer 45. In the present embodiment, the opening for forming the functional layer 45 has an elongated shape as shown in FIG. 13-2, and both ends in the longitudinal direction are arcuate. In addition, the upper opening of the first partition 52 is formed wider than the lower opening. That is, the side surface of the first partition 52 is formed to have an inclined portion 52a with respect to a direction perpendicular to the substrate surface as shown in FIG.

In the second partition formation step (S4), as shown in FIGS. 13-3 and 13-4, the second partition 53 is formed so as to surround the formation region of the functional layer 45.
Here, the second partition wall 53 is formed on the first partition wall 52 by exposing the flat surfaces 52b and 52b ′ of the first partition wall so that the upper surface of the first partition wall 52 is exposed when viewed from above. The second partition 53 is formed by patterning so that both ends in the longitudinal direction of the opening of the first partition 52, that is, the vicinity of both ends in the longitudinal direction of the functional layer 45 are substantially semicircular. By forming the second partition wall 53 in this way, the flat surface 52b ′ of the first partition wall in the vicinity of both end portions in the longitudinal direction of the opening portion is flat in the first partition wall in the vicinity of the straight line portion (long side portion) of the opening portion. The area is larger than that of the surface 52b, and the area of the lyophilic first partition wall 52 can be secured widely.

  In this embodiment, the width of the flat surface 52b ′ at the both ends in the longitudinal direction of the opening of the first partition 52 (the distance between the longitudinal end of the first partition 52 and the lower opening of the second partition 44) is L2. The width of the flat surface 52b in the straight portion (long side portion) of the opening of the first partition 52 is longer than the width L1 (the distance between the long side of the opening of the first partition 52 and the lower opening of the second partition 44). It forms so that it may become. By making L2 longer than L1, the area of the flat surface 52b ′ near both ends of the opening is made larger than the flat surface 52b of the straight part of the opening, and the area of the lyophilic first partition wall 52 is increased. Widely secured. In the present embodiment, both end portions in the longitudinal direction of the opening are arcuate, but the same applies to the case where the shape is linear.

  As described above, in this embodiment, both ends in the longitudinal direction of the opening of the first partition 52 among the flat surface of the first partition, that is, the vicinity of both ends in the longitudinal direction of the functional layer 45 are substantially semicircular. Accordingly, the flat surface 52b ′ of the first partition wall has a larger area than the flat surface 52b of the first partition wall formed in the vicinity of the straight portion (long side portion) of the opening, and the lyophilic first partition wall 52b. A large area is secured. Thereby, the thin film material liquid of the light emitting layer 45b is dried while being strongly pulled toward the outer peripheral side of the opening by the flat surface 52b ′ of the substantially semicircular first partition having a large area. And it is prevented that a thin film material liquid collects in the center part of an opening part by surface tension by drying while being pulled.

Generally, when a thin film is changed from a liquid layer to a solid phase, a compressive stress is applied, and the compressive stress is applied to an arc portion in comparison with a stress applied to a straight portion. Therefore, the contact angle of the liquid droplet on the flat surface 52b ′ of the first partition wall having the substantially semicircular opening is smaller than the straight portion (long side portion) of the opening, and the liquid droplet spreads over a wide area. , It is prevented from gathering at the center of the opening.
As a result, the light emitting layer 45b is formed in a state where the film thickness is uniform to every corner of the region surrounded by the first partition wall 52, and non-uniformity of the light emission luminance within one pixel due to the variation in film thickness occurs. There is nothing.

[Example 2-2]
Moreover, it can also be set as a structure as shown in FIG. 14 as said modification. In FIG. 14, arcuate concave portions 55 are provided on the substantially semicircular flat surfaces 52 b ′ at both ends of the first partition 52 as the liquid reservoir portions of the thin film material solution along the shape of both ends of the opening. By providing the recess 55 in this way, droplets also accumulate in the recess 55, and the thin film material liquid is more strongly pulled toward the flat surface 52b ′ side of the substantially semicircular first partition wall. For this reason, since the thin film material is dried while being pulled more strongly in the both end directions, the material is prevented from gathering at the center of the opening. As a result, the light emitting layer 45b having a uniform thickness can be formed in the region surrounded by the first partition 52 (the opening region of the first partition 52), and the film of the light emitting layer 45b (functional layer 45). A high-quality electro-optical device can be manufactured without quality deterioration due to thickness variations.

Here, the shape of the recess 55 is not particularly limited as in the case of the first embodiment, and can take various forms such as a columnar shape, a prismatic shape, and a dimple shape. Further, the depth of the concave portion 55 is not particularly limited, and the area of the flat surface 52b ′ of the substantially semicircular first partition and the droplet amount of the thin film material liquid filled in the droplet filling region R _S. It can be appropriately set according to various conditions such as.

[Example 2-3]
Moreover, it can also be set as a structure as shown in FIG. 15 as another modification. In the example shown in FIG. 15, in the pixel configuration shown in FIG. 12, the area of the flat surface 52b of the first partition wall is small in the straight line portion (long side portion) at the center of the opening, and the longitudinal direction of the opening of the first partition wall 52 The outer peripheral portions of the flat surfaces 52b and 52b ′ of the first partition are formed in a curved shape so that the area of the flat surface 52b ′ of the first partition is large at both ends. Also in this case, the same effect as in the above case can be obtained, and the light emitting layer 45b can be formed in a state where the film thickness is uniform up to every corner of the region surrounded by the first partition 52. Therefore, it is possible to manufacture a high-quality electro-optical device that does not deteriorate in quality due to variations in the thickness of the light-emitting layer 45b (functional layer 45).

  In the first and second embodiments described above, the case where the functional element unit 40 is formed using the anode as the pixel electrode 41 and the cathode as the counter electrode 46 is illustrated, but the present invention is not limited to this, and the cathode serves as the pixel. The functional element unit 40 may be formed using the electrode 41 and the anode as the counter electrode 46. In the above-described embodiment and embodiment 2, the case where a TFT is used as a drive element or a switching element as an active matrix type electro-optical device has been described. However, a TFD (thin film diode) is used as the drive element or the switching element. You can also. The electro-optical device can be applied not only to an active matrix type electro-optical device but also to a passive matrix type electro-optical device.

  Further, in the above-described first and second embodiments, the case where an electro-optical device having an organic EL thin film is manufactured has been described as an example. However, in manufacturing an electro-optical device, a thin film such as a color filter is used as a droplet discharge method. The present invention can also be widely applied to the case of forming with the use of. In addition, it can be widely applied not only to electro-optical devices but also to the manufacture of semiconductor devices and display devices in which a thin film layer is formed at a predetermined position by a droplet discharge method such as an ink jet process.

[Example 3-1]
<Electro-optical device>
FIG. 17 is a diagram illustrating a planar structure of each pixel region A provided in the organic EL device 1 of the present embodiment. 16A is a diagram mainly showing a pixel driving portion such as a TFT in the pixel region A of FIG. 16, and FIG. 11B is a diagram showing a partition wall (partitioning member) for partitioning the pixels. is there. 18 shows a cross-sectional configuration along the line XX in FIG. 17A, and FIG. 19 shows a cross-sectional configuration along the line YY.

  In FIG. 17A, the pixel region A includes a pixel electrode 141 having a substantially rectangular shape in plan view, a signal line 132, a common power supply line 133, a scanning line 131, and other unillustrated signal lines 132 that are disposed around the four sides. It consists of scanning lines for pixel electrodes. Looking at the cross-sectional structure of the pixel region A shown in FIG. 18, a driving TFT 143 is provided on the substrate (base) 10, and further, an organic film is formed on the insulating film 240 formed so as to cover the driving TFT 143 and the like. An EL element 200 is formed. The organic EL element 200 mainly includes an organic functional layer 140 provided in a region surrounded by a partition wall (second partition layer; partition member) 150 erected on the substrate 10, and the organic functional layer 140 is a pixel. A configuration in which the electrode 141 is sandwiched between the common electrode 154 is provided.

  In the planar structure shown in FIG. 17B, the partition wall 150 has a partition region 151 having a substantially rectangular shape in plan view corresponding to the formation region of the pixel electrode 141, and the above organic function is inside the partition region 151. A layer 140 is formed. A part of the inorganic partition wall 149 (first partition wall layer described later) extends along the inner periphery of the partition region 151, and the organic functional layer 140 and the pixel electrode 141 are in contact with each other in the opening of the inorganic partition wall 149. It is supposed to be.

  In FIG. 18, the driving TFT 143 includes a source region 143a, a drain region 143b, and a channel region 143c formed in the semiconductor film 210, a gate insulating film 220 formed on the semiconductor film surface, and a gate electrode 143A. ing. Further, a first interlayer insulating film 230 covering the semiconductor film 210 and the gate insulating film 220 is formed thereon, and the first interlayer insulating film 230 and the gate insulating film 220 penetrate through these to form a semiconductor. There are contact holes 232 and 234 that reach the film 210. Both the drain electrode 236 and the source electrode 238 are connected to the drain region 143b and the source region 143a through the contact holes, respectively.

A second interlayer insulating film 240 is further formed on the first interlayer insulating film 230. A portion of the second interlayer insulating film 240 that covers the signal line 132, the drain electrode 236, and the like is shown in FIG. It protrudes upward like 19 and forms the convex part 240a. The convex portion 240a has a substantially rectangular frame shape in plan view surrounding the organic functional layer 140 corresponding to the scanning line 131, the signal line 132 and the like surrounding the pixel electrode 141 in a plane.
Note that the base insulating film 210 to the second interlayer insulating film 240 formed between the substrate 10 and the organic EL element 200 constitute a circuit layer of the organic EL device according to the present invention.

  The pixel electrode 141 is formed so as to run on the convex portion 240a surrounding the periphery. Further, a part of the pixel electrode 11 is embedded in a contact hole 240b penetrating the second interlayer insulating film 240, and the pixel electrode 141 and the drain electrode 236 are connected via the contact hole 240b, so that the driving TFT 143 and the pixel The electrode 141 is electrically connected.

  The partition wall (first partition layer) 149 according to the present invention is formed so as to cover a part of the pixel electrode 141 formed on a part of the convex part 240a and to cover the convex part 240a. By doing so, the partition wall 149 has a slope portion 149a on the pixel electrode 141 that follows the slope shape on the side of the convex portion 240a. Further, a partition wall (second partition layer) 150 made of an organic material is stacked on the partition wall 149 made of an inorganic material, and forms a partition member in the organic EL device together with the inorganic partition wall 149. A region surrounded by the side wall surface of the partition wall 150 on the pixel electrode 141 side is a partition region 151. In addition, the inner wall surface of the partition 150 is formed at a position retracted outward from the slope 149a of the inorganic partition as shown in FIG.

Here, the partition wall 149 and the partition wall 150 have not only a function of isolating the pixel electrode 141 but also a function of forming a lyophilic region and a liquid repellent region when forming the organic functional layer 140 using a liquid phase method. The inorganic partition wall 149 disposed on the lower layer side is preferably lyophilic and the partition wall 150 is preferably liquid repellent. As a result, it is possible to reduce the occurrence of problems due to the mixing of liquid into adjacent pixels.
In order to express such a difference in affinity for the liquid material, the material of the inorganic partition wall 149 and the partition wall 150 are made different from each other as described above, and surface modification processing such as plasma treatment is performed on these partition walls 149 and 150. The method of applying can be illustrated. In addition, a configuration in which fluoride is mixed into an organic material forming the partition 150 to impart liquid repellency to the partition 150 itself can be applied regardless of plasma treatment.

  In the organic EL element 200, a hole injection layer (charge transport layer) 140A and a light emitting layer 140B formed using a liquid phase method are stacked on the pixel electrode 141 in the partition region 151 surrounded by the partition wall 150, Further, a common electrode 154 that covers the light emitting layer 140B and the partition 150 is formed. In the case of the present embodiment, the hole injection layer 140A is formed over the pixel electrode 141 and the edge of the inorganic partition wall 149 in the region surrounded by the inorganic partition wall 149, and the side surface portion thereof is the inorganic partition wall. 149 is in contact with the slope portion 149a. The light emitting layer 140B is formed on the hole injection layer 140A and is in contact with the inclined surface portion 149a of the inorganic partition wall 149 at the side surface portion.

As the substrate 10, in the case of a so-called bottom emission type organic EL device, a transparent substrate such as glass is used because light is extracted from the substrate side. In the case of the top emission type, an opaque substrate can be used.
In the case of a bottom emission type in which light is extracted through the substrate 10, the pixel electrode 141 is formed of a light-transmitting conductive material such as ITO (indium tin oxide). In the case of the top emission type, it does not need to be translucent and can be formed of an appropriate conductive material such as a metal material. Since the hole injection layer 140A according to this embodiment is formed by a liquid phase method, the surface of the pixel electrode 141 is preferably lyophilic, and water-based ink is used as a material for forming the hole injection layer 140A. In many cases, hydrophilicity is more preferable.

  The common electrode 154 is formed on the substrate 10 so as to cover the light emitting layer 140 </ b> B, the upper surfaces of the partition walls 150, and the wall surfaces forming the side surfaces of the partition walls 150. As a material for forming the common electrode 154, in the case of the bottom emission type, a light reflective metal material such as Al or Ag is preferably used, and in the case of the top emission type, a transparent conductive material is used. ITO is suitable as the transparent conductive material, but other translucent conductive materials may be used.

  A cathode protective layer may be formed on the upper layer side of the common electrode 154. By providing such a cathode protective layer, an effect of preventing the common electrode 154 from being corroded during the manufacturing process can be obtained, and an inorganic compound such as silicon oxide, silicon nitride, silicon nitride oxide or the like can be used. Can be formed. By covering the common electrode 50 with a cathode protective layer made of an inorganic compound, it is possible to satisfactorily prevent oxygen and the like from entering the common electrode 154 made of an inorganic oxide. The cathode protective layer is formed to a thickness of about 10 nm to 300 nm.

  In the organic EL device of the present embodiment having the above-described configuration, the inorganic bank 149 that surrounds the organic functional layer 140 extends into the partition region 151, and the extending portion forms a slope 149a in the partition region. Therefore, the hole injection layer 140A and the light emitting layer 140B can be planarized when the organic functional layer 140 is formed using a liquid phase method, and an organic functional layer having a uniform film thickness and film quality can be formed. It has become a thing. In the organic EL device of the present embodiment, since the extending portion of the inorganic partition wall 149 has a slope shape, the exposed area of the inorganic partition wall 149 into the partition region 151 is reduced without reducing the aperture ratio of the pixel region. There are advantages that can be increased.

<Method of manufacturing electro-optical device>
Next, a method for manufacturing the organic EL device (electro-optical device) 1 using the droplet discharge device (IJ) will be described with reference to FIGS. 23 and 24, only a single pixel region A (a diagram corresponding to the cross-sectional configuration shown in FIG. 19) is shown for the sake of simplicity. In the organic EL device according to the present invention, both a configuration for extracting light from the organic EL element from the substrate side (bottom emission) and a configuration for extracting the light from the side opposite to the substrate (top emission) can be adopted. A type organic EL device will be described.

First, as shown in FIG. 23A, the driving TFT 143 (not shown) is formed on the substrate 10, and the scanning line 131 and the signal line 132 are formed on the first interlayer insulating film 230. In the bottom emission type organic EL device of the present embodiment, the substrate 10 is a light-transmitting substrate such as glass or quartz.
Next, as shown in FIG. 23B, a second interlayer insulating film 240 is formed so as to cover the first interlayer insulating film 230 and the upper surface of each wiring. At this time, the second interlayer insulating film 240 in the region on the scanning line 131 and the signal line 132 is partially protruded upward in the figure of the substrate 10 to form a convex portion 240a. That is, the second interlayer insulating film 240 is formed to a thickness that does not flatten the unevenness due to the scanning lines 131 and the like on the first interlayer insulating film 230.

  Next, as shown in FIG. 23C, a pixel electrode 141 is formed by patterning using a known photolithography technique. At this time, the pixel electrode 141 is disposed so that the peripheral end thereof runs over the convex portion 240a. Although not shown, the pixel electrode 141 is electrically connected to the existing TFT 143 on the substrate 10 (see FIG. 18). Accordingly, the drain region 143b of the driving TFT 143 is conductively connected to the position surrounded by the signal line, the common power supply line, and the scanning line as shown in FIG. A pixel electrode 141 is formed. In this embodiment, since the organic EL device is a bottom emission type, the pixel electrode 141 is formed using a transparent conductive material such as ITO.

Next, as shown in FIG. 23D, an inorganic bank (first partition wall layer) 149 made of an inorganic insulating material such as silicon oxide is formed so as to partially overlap the peripheral portion of the pixel electrode 141 in a planar manner. .
At this time, the inorganic bank 149 is formed so as to cover the convex portion 240a. Thereby, the inorganic bank 149 which has the slope part 149a which follows the cross-sectional shape of the convex part 240a can be formed. Specifically, after a silicon oxide film is formed so as to cover the pixel electrode 141 and the second interlayer insulating film 240, a predetermined region (a region indicated by reference numeral 141a in the drawing) on the pixel electrode 141 using a known photolithography technique. ) Is selectively removed, and the surface of the pixel electrode 141 is partially exposed.

Next, as shown in FIG. 24A, a bank (second partition layer) 150 made of an organic insulating material such as acrylic or polyimide is formed on the inorganic bank 149 in the region on the convex portion 240a.
The height of the bank 150 is set to about 1 to 2 μm, for example, and functions as a partition member for the organic EL element on the substrate 10. Under such a configuration, a partition formed of a sufficiently high step between the hole injection layer and the light emitting layer of the organic EL element, that is, the application position of these forming materials and the surrounding bank 150. Region 151 is formed.
Further, when the bank 150 is formed, the position of the wall surface of the bank 150 constituting the partition region 151 is formed to recede from the slope portion 149a of the inorganic bank 149. By exposing the slope 149a of the inorganic bank 149 in the partition region 151 in this way, the wet spread of the liquid material disposed in the bank 150 in a later step can be improved.

After the bank 150 is formed, a liquid repellent treatment is performed on the region on the substrate including the bank 150 and the pixel electrode 141. Since the bank 150 functions as a partition member for partitioning the organic EL element, the bank 150 preferably exhibits non-affinity (liquid repellency) with respect to the liquid material discharged from the droplet discharge head 20. By liquid treatment, non-affinity can be selectively expressed in the bank 150.
As such liquid repellent treatment, for example, a method of treating the surface of the bank with a fluorine compound or the like can be employed. Examples of the fluorine compound include CF ₄ , SF ₆ , and CHF _3. Examples of the surface treatment include plasma treatment and UV irradiation treatment.

In such a liquid repellent treatment, even if the entire surface of the substrate is treated, the surface of the pixel electrode 141 made of an inorganic material made of an ITO film and the surface of the inorganic bank 149 made of silicon oxide are formed on the bank 150 made of an organic material. Since it is less liable to be liquid repellent than the surface, only the surface of the bank 150 is selectively made liquid repellent, and a plurality of regions having different affinity for the liquid material are formed in the region surrounded by the bank 150.
Alternatively, the bank 150 having the same liquid repellency can be formed by using a resin material to which fluoride is added as a forming material of the bank 150.

  After the liquid repellent treatment is performed, as shown in FIG. 24A, the liquid material 114a containing the hole injection layer forming material is then applied to the droplet discharge head with the upper surface of the substrate 10 facing upward. 300 is selectively applied to the application position surrounded by the bank 150. The liquid material 114a for forming the hole injection layer includes a hole injection layer forming material and a solvent.

  When the liquid material 114a containing the hole injection layer forming material is discharged onto the substrate 10 from the droplet discharge head 300, the bank 150 is formed so as to surround the applied position. It is designed not to spread beyond it. In this embodiment, the surface of the pixel electrode 141 is a lyophilic region, and the surface of the inorganic bank 149 that surrounds the pixel electrode 141 has a higher affinity with the liquid material than the surface of the pixel electrode 141. The liquid material 114a applied onto the pixel electrode 141 spreads over the pixel electrode 141 without any gap, and is uniformly filled in the bank 150.

  Next, as shown in FIG. 24B, the solvent of the liquid material 114 a is evaporated by heating or light irradiation to form a solid hole injection layer 140 </ b> A on the pixel electrode 141. Alternatively, firing may be performed at a predetermined temperature and time (for example, 200 ° C., 10 minutes) in an air environment or a nitrogen gas atmosphere. Or you may make it remove a solvent by arrange | positioning under the pressure environment (vacuum environment) lower than atmospheric pressure. At this time, in the step of disposing the liquid material shown in FIG. 24A, the liquid material is uniformly spread in the bank 150. Therefore, as shown in FIG. Thus, a flat film-shaped hole injection layer 140A is obtained.

Subsequently, as shown in FIG. 24B, the liquid material 114b containing the light emitting layer forming material and the solvent is injected from the droplet discharge head 300 with the upper surface of the substrate 10 facing upward to inject holes into the bank 150. Selectively apply on layer 140A.
As this light emitting layer forming material, for example, a material containing a precursor of a conjugated polymer organic compound and a fluorescent dye for changing the light emission characteristics of the light emitting layer to be obtained can be suitably used. The precursor of the conjugated polymer organic compound is discharged from a droplet discharge head together with a fluorescent dye, etc., formed into a thin film, and then cured by heating to form a light emitting layer that becomes a conjugated polymer organic EL layer. For example, in the case of a sulfonium salt of a precursor, the sulfonium group is eliminated by heat treatment to become a conjugated polymer organic compound.

  When the liquid material 114b containing the light emitting layer forming material of each color is discharged and applied in this manner, the solvent in the liquid material 114b is evaporated. By this step, as shown in FIG. 24C, a solid light emitting layer 140B is formed on the hole injection layer 140A, and thereby an organic functional layer 140 composed of the hole injection layer 140A and the light emitting layer 140B is obtained. . Here, regarding the evaporation of the solvent in the liquid material 114b containing the light emitting layer forming material, treatment such as heating or decompression is performed as necessary. However, the light emitting layer forming material usually has a good drying property and a fast drying property. Therefore, the light emitting layer 140B of each color can be formed in the order of application by sequentially discharging and applying the light emitting layer forming material of each color without performing such a process. Further, as described above, since the surface of the hole injection layer 140A on which the liquid material 114b is arranged is satisfactorily flattened, the light emitting layer 140B formed thereon is also formed with good flatness, The film thickness and film quality are uniform. Since the liquid material 114b is also dried while being in contact with the slope portion 149a of the inorganic bank 149, the slope portion 149a prevents the liquid material from being unevenly distributed, and better uniformity can be obtained.

  As described above, according to the method for manufacturing an electro-optical device according to the present invention, when the partition 150 and the organic EL element 200 are formed on the substrate 10, the inorganic partition having the slope 149 a at the peripheral portion of the pixel electrode 141. 149 is extended, and then the liquid material 114a is disposed inside the partition wall 150. Therefore, the liquid material is effectively prevented from being deformed into a spherical shape on the surface of the pixel electrode 141, and the liquid material is made uniform. It can be wet and spread and dried and solidified with a uniform film thickness. In addition, the light emitting layer 140B having a uniform film thickness is thereby obtained. Therefore, uniform light emission characteristics can be obtained in the pixel region A, and since the film thickness is uniform, the short circuit between the electrodes hardly occurs, and the organic EL element 200 having excellent reliability can be manufactured.

  Further, the convex portion 240a formed in the second interlayer insulating film 240 to form the inorganic partition wall 149 having the slope portion 149a is formed by the scanning line 131 and the signal line 132 formed together with the TFT 143 for driving the pixel. Since it is formed following the uneven shape, the height of the step can be easily controlled by the thickness of these wirings and the thickness of the second interlayer insulating film 240. In addition, since the manufacturing method of the other part of a present Example is the same as that of Example 1, it omits.

[Example 3-2]
In the above embodiment, the case where the convex portion 240a is caused by the uneven shape of the wiring (scanning line 131, signal line 132, etc.) provided on the lower layer side has been described. However, the electro-optic according to the present invention is described. In the apparatus, a conductive member such as a dummy wiring may be provided on the lower layer side (substrate side) than the pixel electrode 141 in order to provide the convex portion 240a.
FIG. 20A is a plan configuration diagram showing a pixel configuration of an organic EL device having such a dummy wiring. FIG. 20B is a cross-sectional configuration diagram taken along the line ZZ in FIG. 20A, and illustration of wiring and the like connected to the substrate and TFT is omitted. In FIG. 20, the same components as those in FIGS. 16 to 19 are denoted by the same reference numerals, and description thereof is omitted.

  In the organic EL device of the present embodiment, as shown in FIG. 20A, a plurality of dummy wirings 136 and 137 are provided along the side edges of the pixel electrode (rectangular region indicated by a broken line) 141. In other words, the pixel electrode 141 is arranged in a rectangular region surrounded by the dummy wirings 136 and 137. 20B, dummy wirings 136 are formed on the first interlayer insulating film 230. The dummy wirings 136 are formed on the first interlayer insulating film 230 so as to cover these dummy wirings 136. The second interlayer insulating film 240 has a portion (convex portion 240a) protruding upward in a region on the dummy wiring 136 following the uneven shape on the first interlayer insulating film 230 caused by the dummy wiring 136. ing. The pixel electrode 141 formed on the second interlayer insulating film 240 is disposed on the convex portion 240a so as to run over the peripheral portion thereof, and the inorganic barrier rib formed in the region including the pixel electrode 141 on the convex portion 240a. 149 has an inclined surface 149 a on the center side of the pixel electrode 141. A partition wall 150 is provided on the inorganic partition wall 149, and the organic functional layer 140 is formed in a partition region 151 surrounded by the partition walls 149 and 150.

  According to the organic EL device of the present embodiment having the above configuration, when the organic functional layer 140 is formed by the liquid phase method, the forming material is in the partition region 151 as in the organic EL device of the previous embodiment. The organic functional layer 140 having a uniform film thickness and film quality can be formed effectively. Therefore, short-circuiting between electrodes and variations in light emission luminance due to non-uniform film thickness and film quality hardly occur, and high-quality light emission can be obtained.

  Further, if the dummy wirings 136 and 13 are arranged along the side edge portion of the pixel electrode 141 and the convex portion 240a is formed as in the present embodiment, the convex portion is formed by the film thickness of the dummy wirings 136 and 137. The height of 240a (that is, the height of the inclined surface portion 149a) can be freely controlled, and the film thickness change of the organic functional layer 140 can be easily handled. The dummy wirings 136 and 137 may be formed in the same layer or in different layers. When they are formed in the same layer, they may be integrally formed in a lattice shape in plan view.

[Example 3-3]
In the embodiment, the case where the dummy wirings 136 and 137 are arranged so as to surround the pixel electrode 141 in a plan view has been described. However, the dummy wirings 136 and 137 are different from the scanning lines and signal lines constituting the driving unit, and There are almost no restrictions on the arrangement. Therefore, a configuration in which these dummy wirings are locally formed around the pixel electrode 141 may be employed. FIG. 21 is a plan view showing a variation of the arrangement of such dummy wirings. FIG. 21A shows a case where dummy wirings 137 and 137 are arranged at both ends of the pixel electrode 141 in the long axis direction. FIG. 21B shows a case where the dummy wiring 138 is arranged near the top of the pixel electrode 141.

  As described above, the liquid material disposed in the partition region 151 tends to become a more stable spherical shape. However, when the partition region 151 has a substantially rectangular shape as shown in FIG. The phenomenon tends to occur. Therefore, as shown in FIG. 21A, if the dummy wirings 137 and 137 are arranged along both ends of the substantially rectangular partition region 151 in the long side direction, the liquid material is separated from the inorganic partition wall 149. The holding force of the liquid material at both ends in the long side direction, which is an easy part, can be increased, and the liquid material can be uniformly wetted and spread on the pixel electrode 141. Thereby, an organic functional layer having a uniform film thickness and film quality can be formed in the partition region 151.

  In addition, when the partition region 151 has a top portion that protrudes outward in the planar shape, the liquid material is easily separated from the inorganic partition wall 149 also at this top portion. Therefore, as shown in FIG. 21 (b), by arranging dummy wirings 138 at the four corners (each vertex) of the partition region 151, uneven distribution of the liquid material in the partition region 151 can be prevented and uniform. The organic functional layer 140 having a film thickness and quality can be obtained.

[Example 3-4]
FIG. 22 is a diagram showing an organic EL device according to another embodiment of the present invention, and is a cross-sectional configuration diagram corresponding to FIG. 20B shown in the previous embodiment.
In each of the above embodiments, the inorganic bank 149 having the inclined surface portion 149a is formed by using the convex portion 240a formed by the wiring (scanning line, signal line, dummy wiring, etc.) provided below the pixel electrode 141. Although the case has been described, as shown in FIG. 22, by forming the concave portion 240b in the second interlayer insulating film 240, the convex portion 240a can be formed around the concave portion 240b. In this case, the second interlayer insulating film 240 is planarized on the first interlayer insulating film 230 on which the TFT or the like is formed on the lower layer side, and a recess 240b is formed at a predetermined position of the second interlayer insulating film 240 by etching.

  If the convex portion 240a is formed by partially removing the second interlayer insulating film 240 as the planarizing film in this way, the pixel electrode 141 and the TFT provided on the lower layer side of the insulating film are connected. Therefore, the contact hole and the recess 240b can be formed at the same time, and the process efficiency and the manufacturing cost can be reduced.

Example 4
In the fourth embodiment, a specific example of an electronic apparatus including the electro-optical device described in the first, second, and third embodiments will be described. FIGS. 25 to 27 are examples of electronic apparatuses equipped with the above-described electro-optical device according to the invention. FIG. 25 is a perspective view illustrating an example of a mobile phone. Reference numeral 100 denotes a mobile phone main body, and 108 is a display unit comprising the electro-optical device according to the present invention. FIG. 26 is a perspective view illustrating an example of a wristwatch-type electronic device. Reference numeral 110 denotes a timepiece main body incorporating a timepiece function, and reference numeral 111 denotes a display unit comprising the electro-optical device according to the present invention. FIG. 27 is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 27, 120 denotes a portable information processing device, 122 denotes an input unit such as a keyboard, 124 denotes an information processing device main unit storing arithmetic means, storage means, and the like, and 126 denotes an electro-optic according to the present invention. It is the display part which consists of an apparatus.

  In these electronic apparatuses, if the electro-optical device according to the present invention is used, a high-quality electronic apparatus can be realized. Note that the electronic apparatus is not limited to these as long as the electro-optical device can be mounted. Therefore, as an electronic apparatus provided with such an electro-optical device, in addition to the mobile phone shown in FIG. 25, the wristwatch-type electric device shown in FIG. 26, the portable information processing device shown in FIG. , Digital still cameras, in-vehicle monitors, digital video cameras, viewfinder type or monitor direct-view type video tape recorders, car navigation devices, pagers, electronic notebooks, calculators, workstations, video phones, POS terminals, etc. Can be mentioned.

  As described above, the electro-optical device and the method for manufacturing the same according to the present invention can form a uniform thin film everywhere in the region partitioned by the partition wall. Suitable for electro-optical devices that affect the characteristics.

  DESCRIPTION OF SYMBOLS 1 Electro-optical device, 10 Substrate, 20 Drive element part, 40 Functional element part, 41 Pixel electrode, 42 Partition, 43 1st partition, 43a Inclined part of 1st partition, 43b Flat surface of 1st partition, 44 2nd partition 44a, slope of second partition, 45 functional layer, 46 counter electrode, 47 seal layer, 140 functional layer, 141 pixel electrode, 149 first partition, 149a slope of first partition, 150 second partition, 154 common electrode, 200 Organic EL element.

Claims (13)

An electro-optical device having a thin film formed by applying a thin film material liquid to a partition region surrounded by a partition wall provided on a substrate,
Scanning lines;
A signal line intersecting the scanning line;
A power line;
A pixel region provided at an intersection of the scanning line and the signal line;
A pixel electrode provided in the pixel region;
A counter electrode;
A functional layer including at least a light-emitting layer disposed between the pixel electrode and the counter electrode;
A light emitting element part having
A drive unit for driving the light emitting element unit,
The partition has a first partition having a lyophilic surface with respect to the thin film material liquid, and a second partition having a surface formed on the first partition and having a liquid repellency with respect to the thin film material liquid. And consist of
The first partition has an exposed portion not covered by the second partition,
The thin film is provided in a region surrounded by the first partition among the partition regions,
An interlayer insulating film covering the surface of the substrate;
The interlayer insulating film has a convex portion that protrudes by being formed on the scanning line and the signal line, and has a concave portion corresponding to the partition region by the convex portion ,
The second partition wall is provided on the first partition wall surrounding the recess;
The electro-optical device, wherein the first partition has a portion that covers the inner wall of the recess as the exposed portion that is not covered by the second partition. An electro-optical device having a thin film formed by applying a thin film material liquid to a partition region surrounded by a partition wall provided on a substrate,
Scanning lines;
A signal line intersecting the scanning line;
A power line;
A pixel region provided at an intersection of the scanning line and the signal line;
A pixel electrode provided in the pixel region;
A counter electrode;
A functional layer including at least a light-emitting layer disposed between the pixel electrode and the counter electrode;
A light emitting element part having
A drive unit for driving the light emitting element unit,
The partition has a first partition having a lyophilic surface with respect to the thin film material liquid, and a second partition having a surface formed on the first partition and having a liquid repellency with respect to the thin film material liquid. And consist of
The first partition has an exposed portion not covered by the second partition,
The thin film is provided in a region surrounded by the first partition among the partition regions,
An interlayer insulating film covering the surface of the substrate;
The interlayer insulating film has a convex part that protrudes when formed on a dummy wiring different from the scanning line and the signal line, and has a concave part corresponding to the partition region by the convex part. The second partition wall is provided on the first partition wall surrounding the recess,
The electro-optical device, wherein the first partition has a portion that covers the inner wall of the recess as the exposed portion that is not covered by the second partition. Inner wall of the recess of the interlayer insulating film, an electro-optical device according to claim 1 or claim 2, characterized in that it is inclined relative to the surface of the substrate. The partition region is substantially rectangular in plan view,
4. The electro-optical device according to claim 3 , wherein an inner wall of the concave portion of the interlayer insulating film is inclined at a portion along the opposing short side portion of the partition region. The first partition wall is mainly of inorganic material, an electro-optical device according to any one of claims 1 to 4 wherein the second partition wall, characterized in that it is made mainly of organic materials. The electro-optical device according to any one of claims 1 to 5, characterized in that the thin film is an organic electroluminescent layer. A method of manufacturing an electro-optical device having a thin film in a thin film forming region on a substrate,
A first barrier rib forming step for forming a first barrier rib surrounding the thin film forming region and having a lyophilic surface with respect to the thin film material liquid;
A second partition wall is formed on the first partition wall, surrounding the partition region including the thin film forming region with a part of the first partition wall exposed, and having a surface having liquid repellency with respect to the thin film material liquid. A second barrier rib forming step,
A thin film forming step of filling the partition region surrounded by the second partition wall with the thin film material solution and then drying to form the thin film in the thin film formation region surrounded by the first partition;
Including
Before the first partition forming step, comprising an interlayer insulating film forming step of forming an interlayer insulating film covering the surface of the substrate and having a recess corresponding to the partition region;
The interlayer insulating film is formed on the scanning line and the signal line to form a protruding portion that protrudes, and the partition region surrounded by the protruding portion is formed to be a relatively recessed portion ,
In the first partition formation step, the first partition is formed so as to cover the inner wall of the recess,
In the second partition formation step, the second partition is formed on the first partition with the portion of the first partition covering the inner wall of the recess exposed. Method. A method of manufacturing an electro-optical device having a thin film in a thin film forming region on a substrate,
  A first barrier rib forming step for forming a first barrier rib surrounding the thin film forming region and having a lyophilic surface with respect to the thin film material liquid;
  A second partition wall is formed on the first partition wall, surrounding the partition region including the thin film forming region with a part of the first partition wall exposed, and having a surface having liquid repellency with respect to the thin film material liquid. A second barrier rib forming step,
  A thin film forming step of filling the partition region surrounded by the second partition wall with the thin film material solution and then drying to form the thin film in the thin film formation region surrounded by the first partition;
Including
  Before the first partition forming step, comprising an interlayer insulating film forming step of forming an interlayer insulating film covering the surface of the substrate and having a recess corresponding to the partition region;
  The interlayer insulating film is formed on the dummy wiring to form a protruding portion that protrudes, and the partition region surrounded by the protruding portion is formed to be a relatively recessed portion,
  In the first partition formation step, the first partition is formed so as to cover the inner wall of the recess,
  In the second partition formation step, the second partition is formed on the first partition with the portion of the first partition covering the inner wall of the recess exposed. Method.
The interlayer insulating film forming step, the inner wall of the recess, according to claim 7 or claim 8, characterized in that to form the interlayer insulating film having the recess so as to be inclined with respect to the surface of the substrate Manufacturing method of the electro-optical device. The partition region is substantially rectangular in plan view,
The interlayer insulating film forming step includes forming the interlayer insulating film having the recess so that an inner wall of the recess is inclined at a portion along the opposing short side portion of the partition region. 10. A method for manufacturing the electro-optical device according to 9 . The partition region is substantially rectangular in plan view,
The electro-optical device according to claim 9 , wherein the interlayer insulating film forming step forms the interlayer insulating film having the recess so that an inner wall of the recess is inclined at a corner of the partition region. Manufacturing method. The thin film formation step, the method of manufacturing an electro-optical device according to any one of claims 7 to 11 and forming an organic electroluminescent film. An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 6.

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