JP5080758B2 - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device excellent in heat radiation and thermal resistance. <P>SOLUTION: The semiconductor light-emitting device comprises chip LEDs 3-6 on a silicon submount element 2. On the silicon submount element 2, a wiring pattern 7 consists of a chip connecting terminal 7a for connecting the chip LEDs 3-6, an external connecting terminal 7b, and a plurality of lead portions 7c connecting corresponding chip connecting terminal 7a and the external connecting terminal 7b. An area of the chip connecting terminal 7a is set larger than that of region where the chip connecting terminal 7a and the chip LEDs 3-6 are superposed each other. <P>COPYRIGHT: (C)2007,JPO&amp;INPIT

Description

The present invention relates to a semiconductor equipment formed by mounting a semiconductor chip on a silicon submount.

  Conventionally, cold cathode fluorescent lamps have been widely used as backlights for large liquid crystal display panels applied to liquid crystal displays and liquid crystal televisions. However, in order to clear the so-called RoHS directive concerning environmental protection, mercury has been used as a raw material. The use of cold-cathode tubes that use is avoided. Further, in the liquid crystal display panel, improving the vividness of the image quality is one of the most important technical issues, and from this viewpoint, the color reproduction range is narrow, and in particular, the cooling of the green color is insufficient. The use of cathode tubes is avoided.

  As a backlight device that replaces the cold cathode tube, no harmful substance such as mercury is used, and since the color reproduction range is wide, a light emitting diode (abbreviated as “LED” in this specification) is formed on the silicon submount element. The use of a semiconductor light-emitting device (for example, see Patent Document 1) formed by flip-chip mounting has been studied.

  Conventionally, as a semiconductor module, as shown in FIG. 16, first and second electric circuits 101 and 102 to which a power supply voltage is applied, and an LED connection disposed between these first and second electric circuits. A third electric circuit 103, an insulating connecting member 104 that extends in the width direction and is spaced apart in the longitudinal direction to connect the electric circuits 101, 102, 103, and the connecting member 104 And an LED 105 having an electrical connection terminal connected to the third electrical path 103 has been proposed (see, for example, Patent Document 2). The first to third electric paths 101, 102, 103 are produced by pressing a long flat conductor such as a copper plate, and the connecting member 104 is formed by insert molding a resin material. Is done.

In the semiconductor module described in Patent Document 2, since the connecting members 104 made of resin are intermittently provided on the long electric paths 101, 102, 103 made of a copper plate or the like, the exposed portions of the electric paths 101, 102, 103 are easy. The entire module can be processed into an arbitrary shape. Further, since the electric paths 101, 102, 103 made of a copper plate or the like are exposed, the heat dissipation is excellent, and the LED 105 can be prevented from being damaged due to an excessive temperature rise.
Japanese Patent Laid-Open No. 2003-218397 JP 2004-253328 A

  By the way, since the LED consumes a large amount of power and thus generates a large amount of heat, it is necessary to take sufficient heat dissipation measures in order to put this type of semiconductor light emitting device into practical use.

  In the technique described in Patent Document 1, a heat dissipation block is arranged by disposing a heat dissipation block on the back surface of the silicon submount element. However, the upper surface of the silicon submount element (LED mounting surface) has a special heat dissipation. No measures have been taken and there is still room for improvement in this regard. That is, in the silicon submount element, the upper surface on which the LED is mounted has the highest temperature, so it is most reasonable to take measures against heat dissipation to prevent overheating of the LED. Since the heat dissipation block is arranged only on the back surface of the mount element, and no special heat dissipation measures are taken on the upper surface of the silicon submount element, the heat dissipation of the silicon submount element cannot be performed efficiently, and the LED There are fears that various disadvantages associated with overheating of the steel, such as deterioration of characteristics, may occur.

  Further, in the semiconductor module described in Patent Document 2, each electric circuit 101, 102, 103 is formed by pressing a copper plate or the like, and the connecting member 104 is formed by insert molding a resin. After the formation of 104, it is necessary to cut off the branches that have been temporarily fixed between the electric circuits 101, 102, and 103, so that there is a problem that the manufacturing process is complicated and the cost is easily increased. Moreover, since the semiconductor module described in Patent Document 1 is configured to process the entire module into an arbitrary shape by plastically deforming the exposed portions of the electric circuits 101, 102, and 103 made of a copper plate or the like, naturally it is flexible. There is a problem that it is limited and difficult to apply to a wider range of applications.

  The present invention has been made in view of the actual state of the prior art, and an object thereof is to provide a semiconductor device having excellent heat dissipation and heat resistance. Another object of the present invention is to provide a semiconductor module having excellent flexibility at low cost and a method for manufacturing the same.

  In order to solve the above problems, the present invention provides a silicon submount element having an insulating oxide layer formed on the surface and a required wiring pattern formed on the oxide layer, and the silicon submount element. A plurality of chip connection terminal portions for connecting the semiconductor chip, a plurality of external connection terminal portions for connecting an external device, and corresponding chip connection terminals. In a semiconductor device comprising a plurality of lead portions for connecting the portion and the external connection terminal portion, the area of the chip connection terminal portion is larger than the area of the region where the chip connection terminal portion and the semiconductor chip overlap each other. did.

  With this configuration, almost the entire upper surface of the silicon submount element can be covered with the wiring pattern. Since the wiring pattern is formed of a metal material having excellent conductivity and thermal conductivity such as copper, the wiring pattern functions as a heat radiating member on the upper surface of the silicon submount element, and the low temperature of the upper surface of the silicon submount element is reduced. And soaking can be realized. Therefore, inconvenience associated with overheating of the LED can be efficiently suppressed or prevented.

  According to the present invention, in the semiconductor device having the above configuration, the outer peripheral dimension of the chip connection terminal portion is larger than the outer peripheral dimension of the terminal portion formed on the semiconductor chip and connected to the chip connection terminal portion. .

  According to such a configuration, the positioning accuracy of the semiconductor chip relative to the chip connection terminal portion can be made moderate to some extent, so that the productivity of the semiconductor device can be increased and the cost of the semiconductor device can be reduced.

  According to the present invention, in the semiconductor device having the above configuration, the outer peripheral size of the external connection terminal portion is larger than the outer peripheral size of the chip connection terminal portion.

  According to such a configuration, the positioning accuracy of the external device with respect to the external connection terminal portion can be moderated to some extent, so that the productivity of the semiconductor device can be increased and the cost of the semiconductor device can be reduced.

  According to the present invention, in the semiconductor device having the above configuration, the wiring pattern is made of a copper plating product.

  Since the wiring pattern made of a copper plating product has high electrical conductivity, it is difficult to generate heat even when a large current is applied, and the amount of heat generated by the semiconductor device can be suppressed.

  In the present invention, at least one light emitting diode and a drive circuit element for the light emitting diode are mounted on the silicon submount element as the semiconductor chip.

  As described above, when the LED and the drive circuit element of the LED are mounted on the silicon submount element, the semiconductor device can be integrated, so that the semiconductor device can be downsized and enhanced in function.

  In the present invention, at least one light emitting diode and a protection circuit element for the light emitting diode are mounted on the silicon submount element as the semiconductor chip.

  As described above, when the LED and the protection circuit element of the LED are mounted on the silicon submount element, the semiconductor device can be integrated, and the semiconductor device can be reduced in size and function, and the electrostatic capacity of the LED can be increased. Breakage and the like can be prevented, and the reliability of the semiconductor device can be improved.

  According to the present invention, in the semiconductor device provided with the LED, red, green, and blue light emitting diodes are mounted on the silicon submount element as the light emitting diodes.

  As described above, when the red, green, and blue light emitting diodes are mounted on the silicon submount element, white light can be obtained by mixing the light of each color emitted from each light emitting diode. Alternatively, it can be used as a backlight of a liquid crystal display panel.

  In addition, the present invention includes a heat sink attached to the back surface of the silicon submount element, and the area of the heat sink is larger than the area of the silicon submount element.

  Thereby, the heat generated from the silicon submount element can be efficiently radiated.

  In the semiconductor device, the semiconductor chip may be a light emitting diode, and light emitted from the light emitting diode may be emitted from the surface of the silicon submount element on which the light emitting diode is mounted. In order to irradiate efficiently in the direction away from the surface where the light emitting diode of the silicon submount element is mounted, an optical member is provided so as to cover the light emitting diode.

  Light emitted from the LED can be efficiently emitted in a direction away from the surface where the light emitting diode of the silicon submount element is mounted (upper surface direction of the silicon submount element), and high light utilization efficiency can be obtained. Therefore, high illuminance and low power consumption can be achieved.

  According to the present invention, in the semiconductor device, the optical member is formed of a translucent material.

  Light emitted from the LED can be irradiated more efficiently in the direction away from the surface where the light emitting diode of the silicon submount element is mounted (upper surface direction of the silicon submount element), and high light utilization efficiency is obtained. Therefore, high illuminance and low power consumption can be achieved.

  Further, in the semiconductor device according to the present invention, the optical member includes a lens provided on a side opposite to the silicon submount element of the light emitting diode, and the silicon submount element side of the lens is a flat surface. The flat surface on the silicon submount element side of the lens is disposed so as to face the surface of the silicon submount element so as to be substantially parallel to the surface on which the light emitting diode is mounted. I made it.

  With this configuration, the flat surface on the silicon submount element side of the lens and the surface on which the light emitting diodes of the silicon submount element are mounted serve as positioning points, and the lens can be assembled by aligning the position and direction of the lens. The lens can be easily and accurately attached.

  In the semiconductor device according to the present invention, a transparent resin is filled between a flat surface of the lens on the silicon submount element side and a surface of the silicon submount element on which the light emitting diode is mounted. I made it.

  With this configuration, it is possible to easily cope with a case where a plurality of LEDs having different heights are mounted on a silicon submount element.

  In the semiconductor device according to the present invention, the optical member includes a lens provided on a surface of the light emitting diode on the side opposite to the silicon submount element, and an outer periphery of a surface of the lens on the silicon mount element side. A cylindrical body formed so as to extend from the portion toward the silicon submount element side, a surface of the lens on the silicon mount element side, and an inner wall of the cylindrical body. The housing portion is configured to have a housing portion and a contact portion that is provided at a distal end portion of the cylindrical body and contacts an outer peripheral portion of the light emitting diode on the silicon submount element.

  As described above, since the housing portion that houses the light emitting diode and the contact portion that contacts the outer peripheral portion of the light emitting diode on the silicon submount element are provided, a plurality of LEDs having different heights are mounted on the silicon submount element. If this happens, it can be handled easily.

  In order to solve the above problems, the present invention relates to a semiconductor module, a tape-like flexible wiring board having a required conductive pattern and a semiconductor device mounting hole, and attached to the flexible wiring board and connected to the conductive pattern. A semiconductor module comprising a plurality of semiconductor devices, wherein the semiconductor device is mounted on a silicon submount element having a required wiring pattern, and is inserted into the semiconductor device mounting hole. Or a plurality of semiconductor chips, and a surface of the silicon submount element on which the semiconductor chip is mounted is disposed to face one surface of the flexible wiring board, and the semiconductor chip is connected to the semiconductor device. Than the other side of the flexible printed circuit board through the mounting hole And the configuration that is arranged to output.

  A flexible wiring board is formed by forming a conductive pattern made of copper foil or the like on a substrate film made of polyimide resin or the like, and is excellent in mass productivity, can be manufactured at low cost, and is excellent in flexibility. It can be elastically deformed into an arbitrary shape. Therefore, compared with the case where an electric furnace made of a thin metal plate is used, it is possible to realize cost reduction of the semiconductor module and easy processing according to the use location. In addition, since the silicon submount element has a thermal expansion coefficient similar to that of a semiconductor chip, a semiconductor module including a semiconductor device in which one or more semiconductor chips are mounted on the silicon submount element includes: Inconvenience due to the difference in thermal expansion from the mounting member, for example, destruction of the semiconductor chip is difficult to occur, and the durability is excellent. Further, when the upper surface of the semiconductor chip is arranged above the upper surface of the flexible wiring board, that is, the semiconductor chip protrudes from the other surface (upper surface) of the flexible printed wiring board through the semiconductor device mounting hole. When the LED is used as the semiconductor chip, the light emitted from the LED is not blocked by the flexible wiring board, so that an illumination device with low power consumption and high illuminance can be realized. Further, when the lower surface of the silicon submount element is disposed below the lower surface of the flexible wiring board, that is, the surface (upper surface) on which the semiconductor chip is mounted is one surface (lower surface) of the flexible wiring board. ) Can be disposed on the back surface of the silicon submount element as necessary, so that a semiconductor module having more excellent heat dissipation characteristics can be easily produced.

  According to the present invention, in the semiconductor module having the above-described configuration, a heat radiating plate is attached to a surface of the silicon submount element opposite to the surface on which the semiconductor chip is mounted.

  According to such a configuration, heat generated from the semiconductor chip such as an LED can be efficiently radiated through the heat radiating plate, so that various inconveniences due to heating of the semiconductor chip, such as deterioration of characteristics of the semiconductor chip, can be prevented. .

  In the semiconductor module having the above-described configuration, the surface of the heat radiating plate attached to the silicon submount element is fixed to the one surface of the flexible printed wiring board. .

  According to such a configuration, since the coupling between the flexible wiring board and the semiconductor device can be strengthened, disconnection of the connecting portion between the flexible wiring board and the semiconductor device can be prevented, and the durability of the semiconductor module can be improved.

  In the semiconductor module having the above-described configuration, the semiconductor chip is a light-emitting diode, and light emitted from the light-emitting diode is transmitted on a surface side on which the light-emitting diode of the silicon submount element is mounted. In order to efficiently irradiate the silicon submount element in a direction away from the surface on which the light emitting diode is mounted, an optical member is provided so as to cover the semiconductor chip.

  Light emitted from the LED can be efficiently emitted in a direction away from the surface where the light emitting diode of the silicon submount element is mounted (upper surface direction of the silicon submount element), and high light utilization efficiency can be obtained. Therefore, high illuminance and low power consumption can be achieved.

  On the other hand, in order to solve the above-mentioned problems, the present invention has a process for preparing a tape-like flexible wiring board having a required conductive pattern and a semiconductor device mounting hole, and a required wiring pattern. A step of preparing a semiconductor device comprising a silicon submount element and one or more semiconductor chips mounted on the silicon submount element; and transferring the flexible wiring substrate in one direction while Of the elements, the surface on which the semiconductor chip is mounted is disposed so as to face one surface of the flexible printed wiring board, and the semiconductor chip is inserted into the semiconductor device mounting hole from one surface side of the flexible wiring board. Attaching the semiconductor device so that is inserted, and the semiconductor chip is the Including a step of connecting the conductive pattern and the wiring pattern in a state of being disposed so as to protrude from the other surface of the flexible printed wiring board through the conductor device mounting hole. The manufacturing method is configured to be manufactured.

  According to such a configuration, since the semiconductor device mounting hole is opened in the flexible wiring board, the semiconductor device can be positioned with respect to the flexible wiring board simply by mounting the semiconductor device so that the semiconductor chip is inserted into the semiconductor device mounting hole. It can be carried out. In addition, while transferring the flexible wiring board in one direction, the silicon submount element is disposed so that the surface on which the semiconductor chip is mounted faces the one surface of the flexible printed wiring board. The semiconductor device is mounted so that the semiconductor chip is inserted into the semiconductor device mounting hole from the surface side, and the conductive pattern formed on the flexible wiring board is connected to the wiring pattern formed on the silicon submount element. The semiconductor device can be efficiently attached to the substrate.

  Inconvenience associated with overheating of the semiconductor chip can be efficiently suppressed or prevented.

  Embodiments of a semiconductor device according to the present invention will be described below with reference to the drawings, taking a semiconductor light emitting device as an example. 1 is a perspective view of a semiconductor light emitting device according to an embodiment, FIG. 2 is a side view of the semiconductor light emitting device according to the embodiment, and FIG. 3 is formed on a silicon submount element of the semiconductor light emitting device according to the embodiment. FIG. 4 is a plan view showing a first modification of the semiconductor light emitting device according to the embodiment, and FIG. 5 is an equivalent circuit of the semiconductor light emitting device according to the first modification. FIG. 6 is a plan view showing a second modification of the semiconductor light emitting device according to the embodiment, and FIG. 7 is a plan view showing a third modification of the semiconductor light emitting device according to the embodiment.

  As shown in FIG. 1, the semiconductor light emitting device 1 of this example includes a silicon submount element 2 and four chip LEDs 3, 4, 5, 6 mounted on the element 2. FIG. 1A shows an embodiment in which four chip LEDs 3, 4, 5, 6 are arranged in a matrix of 2 rows and 2 columns, and FIG. It is an example of an embodiment in which 5 and 6 are arranged in one row.

  As shown in FIG. 2, the silicon submount element 2 has an insulating oxide layer 2b formed almost uniformly on the surface including at least the mounting surface 2a of the chip LEDs 3, 4, 5 and 6, and the oxide A wiring pattern 7 is formed in a predetermined arrangement on the layer 2b.

  As illustrated in FIG. 3A, the wiring pattern 7 includes four sets (8 in total) of chip connection terminal portions 7a, each of which connects two chips LED3, 4, 5, and 6 as one set. The number of external connection terminal portions 7b corresponding to the number of chip connection terminal portions 7a for connecting external devices not shown, and a plurality of lead portions for connecting the corresponding chip connection terminal portions 7a and external connection terminal portions 7b to each other 7c, between the two chip connection terminal portions 7a arranged adjacent to each other, between the chip connection terminal portion 7a and the lead portion 7c, and between the two lead portions 7c. A groove-like space 7d is provided and is partitioned from each other. As is clear from FIG. 3A, in the wiring pattern 7 of this example, the width of the largest portion of each space 7d is the same as or smaller than the width of the smallest portion of the lead portion 7c. It is formed to be smaller. Further, as shown in FIG. 3A, the area of both of the pair of chip connection terminal portions 7a provided for each of the chip LEDs 3, 4, 5 and 6 is the chip connection terminal portion 7a and the chip LEDs 3, 4 , 5 and 6 are larger than the area of the overlapping region. The wiring pattern 7 is preferably formed of a copper plating product because it has good conductivity and generates little heat even when a large current is passed. Further, it is preferable to provide a gold layer, a tin layer, a solder layer, or the like for facilitating connection of the chip LEDs 3, 4, 5, 6 and an external device on a predetermined portion of the surface of the wiring pattern 7.

  FIG. 3B is a diagram showing an example of a wiring pattern 700 formed on the silicon submount element 2 in the prior art. The same number of chip connection terminal portions 700a as the wiring pattern 7 according to the embodiment and external connection are shown. A terminal portion 700b and a lead portion 700c are formed. The shape and dimensions of the chip connection terminal portion 700a are formed substantially the same as the shape and dimensions of the terminal portions formed on the chip LEDs 3, 4, 5, and 6 connected thereto. On the other hand, the external connection terminal portion 700b is formed in a plane shape having an optimum dimension capable of easily and highly accurately connecting an external device, like the external connection terminal portion 7b according to the embodiment. Similarly to the lead portion 7c according to the embodiment, the lead portion 7c is formed in a linear shape having an optimum dimension with low resistance and easy routing. Therefore, as is apparent from a comparison between FIG. 3A and FIG. 3B, in the prior art, between the chip connection terminal portion 700a and the lead portion 700c arranged adjacent to each other, and the two lead portions. Between the portion 700c, unlike the silicon submount element 2 according to the embodiment, the width of the largest portion of each space 700d is not necessarily equal to or smaller than the width of the smallest portion of the lead portion 700c. In other words, a planar space 700d having a width larger than the width of the smallest width portion of the lead portion 700c is formed.

  The wiring pattern 700 is preferably formed of a copper plating product because it has good conductivity and generates little heat even when a large current is passed. Further, it is preferable to provide a gold layer, a tin layer, a solder layer, or the like for facilitating connection of the chip LEDs 3, 4, 5, 6 and an external device on a predetermined portion of the surface of the wiring pattern 700.

  The upper surface of the silicon submount element 2 according to the embodiment is almost entirely covered with a wiring pattern 7 as shown in FIG. As described above, the wiring pattern 7 is formed of a metal material having excellent conductivity and thermal conductivity, such as copper. Therefore, the wiring pattern 7 functions as a heat radiating member on the upper surface of the silicon submount element. Compared with the conventional silicon submount element 200 shown in FIG. 3B, the heat dissipation of the upper surface of the silicon submount element 2 can be improved, and the temperature can be lowered and the temperature can be equalized. Therefore, various inconveniences such as characteristic deterioration due to overheating of the chip LEDs 3 to 6 can be efficiently suppressed or prevented. Further, in the semiconductor light emitting device 1 of this example, since the desired wiring pattern 7 is formed by enlarging the chip connection terminal portion 7a, the positioning accuracy of the chips LED3 to 6 with respect to the chip connection terminal portion 7a is moderately moderate to some extent. Therefore, the productivity of the semiconductor device can be improved and the cost of the semiconductor device can be reduced.

  As chip LEDs 3, 4, 5, and 6, any chip LED can be used in any combination, but when white light is obtained by color mixing, the emission efficiency of green LED is that of red LED and blue LED. In consideration of the worse, it is desirable to have two green LEDs and one red LED and one blue LED. As shown in FIG. 1A, when the four chip LEDs 3 to 6 are arranged in two rows and two columns, the two green LEDs 3 and 4 are diagonally arranged in order to improve the uniformity of the color mixture. It is particularly desirable to arrange. In addition, as shown in FIG. 1B, when four chip LEDs 3 to 6 are arranged in a row, one green LED 3 is interposed between the red LED 5 and the blue LED 6 in order to increase the uniformity of the color mixture. It is particularly desirable to arrange another green LED 4 outside the red LED 5 or outside the blue LED 6. As shown in FIG. 2, terminal portions for facilitating connection with the chip connection terminal portions 7 a formed on the silicon submount element 2 are provided on the back surfaces of these chip LEDs 3 to 6 (the back surface of the light emitting surface). 3a is formed, and a bonding gold layer, tin layer, solder layer, or the like is formed on a predetermined portion of the surface thereof. Each of the chip LEDs 3 to 6 is mounted on the silicon submount element 2 by a flip chip method. In addition, about the number and combination of chip LED to be used, it is not limited to this, It can select arbitrarily.

  Further, when the chips LED3 to 6 are mounted as semiconductor chips on the silicon submount element 2, as shown in FIGS. 4 and 5, in addition to the chip LEDs 3 to 6, the protection circuit elements of these chips LED3 to 6 are provided. 11, 12, 13, 14 can be implemented. As the protection circuit elements 11 to 14, in addition to the Zener diode illustrated in FIG. 5, other diodes and circuit elements having surge absorption characteristics can be used. As described above, when the chip LEDs 3 to 6 and the protection circuit elements 11 to 14 of the chip LEDs 3 to 6 are mounted on the silicon submount element 2, the configuration of the semiconductor light emitting device can be integrated. As a result, the chip LED 3 to 6 can be prevented from electrostatic breakdown and the reliability of the semiconductor light emitting device can be improved.

  Further, when mounting the chips LED3 to 6 as semiconductor chips on the silicon submount element 2, in addition to the chips LED3 to 6, the drive circuit elements 15 of these chips LED3 to 6 are mounted as shown in FIG. can do. An IC chip can be used as the drive circuit element 15. As described above, when the chip LEDs 3 to 6 and the drive circuit elements 15 of the chips LED 3 to 6 are mounted on the silicon submount element 2, the configuration of the semiconductor light emitting device can be integrated. And higher functionality can be achieved. Of course, it is also possible to mount the chip LEDs 3 to 6, the protection circuit elements 11 to 14 of the chip LEDs 3 to 6, and the drive circuit element 15 of the chip LEDs 3 to 6 together on the silicon submount element 2.

  Further, in the embodiment, as is clear from comparison between FIG. 3A and FIG. 3B, the desired wiring pattern 7 is formed by enlarging the chip connection terminal portion 7a. Instead of such a configuration, as schematically shown in FIG. 7, a desired wiring pattern 7 can be formed by increasing the size of the external connection terminal portion 7b. In this case, the positioning accuracy of the terminal portion provided in the external device with respect to the external connection terminal portion 7b can be moderately moderate to some extent. As a result, the productivity of the electronic device composed of the semiconductor device and the external device can be improved. The cost of the electronic device can be reduced.

  In the semiconductor light emitting device 1 of this example, a wiring pattern 7 including a chip connection terminal portion 7a, an external connection terminal portion 7b, and lead portions 7c for connecting these terminal portions 7a and 7b is formed on the silicon submount element 2. At the same time, a groove-like space 7d having a substantially constant width is formed between two adjacent chip connection terminal portions 7a, between the chip connection terminal portion 7a and the lead portion 7c, and between the two lead portions 7c. Then, the width of the widest portion of each space 7d is made equal to or smaller than the width of the narrowest portion of the lead portion 7c. Further, the area of both of the pair of chip connection terminal portions 7a provided for each of the chip LEDs 3, 4, 5, 6 is larger than the area of the overlapping region of the chip connection terminal portion 7a and the chip LEDs 3, 4, 5, 6. It was made to become. Thereby, the heat dissipation characteristic from the upper surface of the silicon submount element 2 can be enhanced, and various inconveniences associated with overheating of the chip LEDs 3 to 6 can be efficiently suppressed or prevented.

  Here, the heat dissipation efficiency of the wiring pattern 7 of the semiconductor device according to the present invention shown in FIG. 3A and the heat dissipation efficiency of the wiring pattern 700 of the conventional semiconductor device shown in FIG. Compared. Both silicon submount elements 2 used a 1.5 mm × 1.5 mm rectangular substrate. In the conventional semiconductor device, the area of the wiring pattern 700 is 3.18 mm 2 (35% of the area of the silicon submount element 2), and the area other than the wiring pattern 700 is 5.82 mm 2 (65% of the area of the silicon submount element 2). ). In contrast, in the semiconductor device according to the present invention, the area of the wiring pattern 7 is 5.6 mm 2 (67% of the area of the silicon submount element 2), and the area other than the wiring pattern 7 is 3.4 mm 2 (silicon submount element). 33% of the area of 2). When a common power of 2.02 W was supplied to these semiconductor devices, the conventional semiconductor device rose to 49.53 ° C., but the semiconductor device according to the present invention remained at 44.67 ° C. When the reference temperature is 25 ° C., the temperature rise per unit power is (49.53−25) /2.02=12.14 (° C./W) in the conventional semiconductor device, whereas In the semiconductor device according to the invention, it was (44.67-25) /2.02=9.74 (° C./W). Thus, the temperature rise per unit power could be reduced by about 2.4 (° C./W), and as a result, the efficiency could be improved by about 20%.

Hereinafter, a method for manufacturing the semiconductor light emitting device according to the embodiment will be described with reference to FIG.
FIG. 8 is a flowchart showing a manufacturing procedure of the semiconductor light emitting device according to the embodiment.

  First, as shown in FIG. 8A, a silicon wafer 21 capable of obtaining a large number of semiconductor light emitting devices of a required size (for example, 3 mm square) is prepared. In addition, the code | symbol 22 in Fig.8 (a) has shown the scheduled scribe line. Next, a thermal oxidation process is performed on the surface of the silicon wafer 21 to form an insulating oxide layer 2b on the surface of the silicon wafer 21, as shown in FIG. Next, as shown in FIG. 8C, required wiring including the chip connection terminal portion 7a, the external connection terminal portion 7b and the lead portion 7c on the surface of the thermally oxidized silicon wafer 21 by, for example, a photoresist method or the like. Pattern 7 is formed. Next, as shown in FIG. 8D, the chip LEDs 3 to 6 are flip-chip mounted on the chip connection terminal portion 7 a formed on the silicon wafer 21. The connection between the chip connection terminal portion 7a and the chip LEDs 3 to 6 can be performed by diffusion bonding of metal layers using ultrasonic waves, reflow soldering, or the like. Finally, as shown in FIG. 8 (e), the silicon wafer 21 is scribed along the planned scribe line 22 to obtain individual pieces of the semiconductor light emitting device 1.

  In the manufacturing method of the semiconductor light emitting device 1 of this example, since the insulating oxide layer 2b is formed on the surface of the silicon wafer 21 by thermal oxidation, the insulating layer is formed by covering the surface of the silicon wafer 21 with an insulating material. Unlike the case where the insulating layer is peeled off, the insulating layer cannot be peeled off from the silicon wafer 21, and a semiconductor light emitting device having excellent durability can be manufactured. Further, since the thermal oxidation process, the formation of the wiring pattern 7 and the mounting of the chip LEDs 3 to 6 are performed at the wafer stage, a required semiconductor light emitting device is required as compared with the case where these processes are performed after the silicon wafer 21 is divided into individual pieces. 1 can be manufactured with high efficiency, and the cost of the semiconductor light emitting device 1 can be reduced.

  Hereinafter, an example of a semiconductor module using the semiconductor light emitting device according to the embodiment will be described with reference to FIGS. 9 to 13 by taking the semiconductor module for illumination device as an example. 9 is a partial plan view of the semiconductor module according to the embodiment, FIG. 10 is a partial cross-sectional view of the semiconductor module according to the embodiment, and FIG. 11 is a flowchart showing the manufacturing procedure of the semiconductor module according to the embodiment. FIG. 13 is a cross-sectional view of an essential part showing another example of the semiconductor module according to the embodiment, and FIG. 13 is a side view of a mirror structure provided in the semiconductor module of FIG.

  As shown in FIGS. 9 and 10, the semiconductor module 31 for the illumination device of the present example includes the semiconductor light emitting device 1 described above, and a heat radiating plate 32 called a metal substrate attached to the back surface of the semiconductor light emitting device 1. And a tape-like flexible wiring board 41 on which a plurality of semiconductor light emitting devices 1 are mounted. In addition, parts corresponding to those in FIG.

  The metal substrate (heat radiating plate) 32 functions as a heat radiating body and a reinforcing body of the semiconductor light emitting device 1 and is formed of a metal material having excellent thermal conductivity such as aluminum or copper. It adheres to the back surface (back surface of the silicon submount element 2) via an adhesive 33 having excellent thermal conductivity such as silver paste.

  As shown in FIG. 9, FIG. 10 and FIG. 12, the flexible wiring substrate 41 is desired on the surface of a tape-like substrate 42 made of a resin material having excellent heat resistance, toughness and insulation properties such as polyimide resin and polyamide resin. The conductive pattern 43 made of copper foil or the like is formed with the arrangement of the above, and the outer surface of the conductive pattern 43 is covered with an insulating cover coat 42a, and the work through holes 44, 45, and 46 are arranged at a desired position in the desired arrangement. Formed. The through holes 44 are mounting holes for the semiconductor light emitting device 1 and are opened at equal intervals in the longitudinal direction of the flexible wiring board 41. Leads 43 a formed on the portion of the conductive pattern 43 facing the semiconductor device mounting hole 44 have a shape and arrangement that can be connected to the external connection terminal portion 7 b formed on the silicon submount element 2 of the semiconductor light emitting device 1. It is formed. The through holes 45 are positioning holes for positioning the semiconductor device mounting holes 44 with respect to a supply device (not shown) of the semiconductor light emitting device 1, and are opened at predetermined intervals before and after the semiconductor device mounting holes 44. The through holes 46 are feed holes of the flexible wiring board 41 and are opened at equal intervals along both longitudinal sides of the flexible wiring board 41. A sprocket tooth (not shown) provided in the illumination device manufacturing apparatus is engaged with the feed hole 46.

  In FIG. 9, two rows of wiring patterns 43 and through holes 44, 45, 46 are formed in parallel in the longitudinal direction of the flexible wiring board 41, but the conductive patterns 43 formed on the flexible wiring board 41 and The number of rows of the through holes 44, 45, 46 is not limited to this, and it is of course possible to use one row or a plurality of rows of three or more rows. The flexible wiring board 41 includes systems such as TCP (tape carrier package) and COF (chip on film).

  As shown in FIG. 10, the semiconductor light emitting device 1 is inserted into the mounting hole 44 from the lower side of the flexible wiring board 41 so that at least the light emitting surfaces of the chip LEDs 3 to 6 protrude above the upper surface of the flexible wiring board 41. Then, the lead 43 a of the flexible wiring board 41 is connected to the external connection terminal portion 7 b formed on the silicon submount element 2. As a connection method between the external connection terminal portion 7b and the lead 43a, thermocompression connection, ultrasonic connection, soldering, wire bonding, or the like can be employed. In the example of FIG. 10, the semiconductor light emitting device 1 and the flexible wiring board 41 are in contact with each other only at the external connection terminal portion 7 b, but the mounting stability of the semiconductor light emitting device 1 with respect to the flexible wiring board 41 is improved. In order to enhance the structure, the upper surface of the metal substrate 32 provided in the semiconductor light emitting device 1 may be bonded to the lower surface of the flexible wiring substrate 41.

  This semiconductor module is manufactured according to the procedure shown in FIG. That is, first, the semiconductor light emitting device 1 manufactured by the procedure shown in FIG. 8, the metal substrate 32, and the flexible wiring substrate 41 are prepared. The flexible wiring board 41 is supplied while being wound around the reel 51. Next, a silver paste is attached to one side of the metal substrate 32, the silicon submount element 2 of the semiconductor light emitting device 1 is mounted on the silver paste attached surface of the metal substrate 32, and then this is heated and dried to obtain the semiconductor light emitting device. 1 and the metal substrate 32 are obtained. The attachment 1A is attached to the flexible wiring board 41 by winding one end of the flexible wiring board 41 drawn out from the reel 51 around the take-up reel 52 and winding the flexible wiring board 41 from the reel 51 side using the feed hole 46. This is performed by sequentially transferring to the reel 52 side. When attaching the joined body 1A, first, the lead forming device 53 is pressed against both the front and back surfaces of the flexible wiring board 41, and the leads 43a formed on the flexible wiring board 41 are formed into a predetermined shape. Positioning of the lead molding device 53 with respect to the flexible wiring substrate 41 is performed by inserting a pin-shaped positioning projection 54 formed in the lead molding device 53 into a positioning hole 45 provided in the flexible wiring substrate 41. Next, the chip LEDs 3 to 6 of the joined body 1 </ b> A transferred from below the flexible wiring board 41 are inserted into the mounting holes 44 formed in the flexible wiring board 41, and external connections formed on the silicon submount element 2. A lead 43 a formed on the flexible wiring board 41 is connected to the terminal portion 7 b using a required connecting device 55. Positioning of the bonded body 1A with respect to the flexible wiring board 41 is performed by inserting a pin-shaped positioning protrusion 57 formed in the bonded body conveying device 56 into a positioning hole 45 provided in the flexible wiring board 41. Finally, the potting resin is supplied to the connecting portion and heat-dried, and the potting resin is supplied to the chip LEDs 3 to 6 and heat-dried to complete the manufacture of the tape-shaped illumination device.

  The illumination device and the semiconductor module for illumination device thus manufactured are appropriately cut or connected and used as a dot-like, planar or linear light-emitting device having a required number of chip LEDs 3 to 6. The manufacturing method of the illumination device and the semiconductor module for the lighting device of this example is such that the lead 43a is continuously formed while the tape-like flexible wiring board 41 is sequentially wound around the take-up reel 52, and the joined body 1A to the flexible wiring board 41 is obtained. And the potting of a predetermined portion are performed, so that the illumination device can be manufactured efficiently and the cost of the illumination device can be reduced.

  In addition, as shown in FIG. 12, in order to irradiate the light radiated | emitted from chip | tip LED3-6 efficiently in the normal line direction of the silicon submount element 2, as for the said illuminating device, a peripheral part of chip | tip LED3-6 is required. A mirror structure 61 having a shape can also be arranged. The mirror structure 61 is formed of a plastic material in which a reflective material made of a metal material having a high light reflectivity or a metal material having a high light reflectivity is formed on the surface. It is attached to the peripheral part. The mirror structure 61 reflects the light emitted from the end face portions of the chip LEDs 3 to 6 in the normal direction of the chip mounting surface 2a. The shape of the reflecting surface is as shown in FIG. It can also be a slope shape, and can also be a concave curved surface shape as shown in FIG. Thus, when the mirror structure 61 having a required shape is set in the peripheral portion of the chip LEDs 3 to 6, the light emitted from the end surface portions of the chip LEDs 3 to 6 is reflected in the normal direction of the chip mounting surface 2a, Since it can be made to merge with the light radiated | emitted from the surface part of chip | tip LED3-6, the utilization efficiency of light can be improved, and the illuminating device with low illuminance and high power consumption can be obtained.

  As described above, the semiconductor module of the present invention attaches a semiconductor device directly to a flexible wiring board excellent in mass productivity and flexibility, so that a semiconductor module that can be elastically deformed into an arbitrary shape according to the use location is inexpensive. Can be manufactured. In addition, since the semiconductor chip is mounted on the silicon submount element whose thermal expansion coefficient is close to that of the semiconductor chip, the semiconductor chip is hardly broken and has excellent durability. In addition, since the upper surface of the semiconductor chip is disposed above the upper surface of the flexible wiring board, when an LED is used as the semiconductor chip, an illumination device with low power consumption and high illuminance can be realized. Furthermore, since the lower surface of the silicon submount element is disposed below the lower surface of the flexible wiring board, a semiconductor module having excellent heat dissipation characteristics can be easily created by disposing a heat sink on the back surface of the silicon submount element. Can do.

  In addition, since the semiconductor module manufacturing method of the present invention inserts the semiconductor device into the semiconductor device mounting hole established in the flexible wiring board, the semiconductor device can be easily positioned with respect to the flexible wiring board. A semiconductor module provided with a semiconductor device can be easily manufactured. In addition, while the flexible wiring board was transferred in one direction, the semiconductor device was inserted into the semiconductor device mounting hole from below the flexible wiring board, and the conductive pattern and the silicon submount element formed on the flexible wiring board were formed. Since the wiring pattern is connected, the semiconductor device can be efficiently attached to the flexible wiring board, and the cost of the semiconductor module can be reduced.

  Next, the configuration of a semiconductor device including lenses on the chip LEDs 3 to 6 will be described with reference to the drawings. FIG. 14 is a cross-sectional view of a semiconductor device provided with a lens. FIG. 14 is similar to FIG. 10 and FIG. 12, and the flexible wiring board 41 shown in FIG. 10 and FIG. 12 is omitted for convenience. In FIG. 14, two chip LEDs are displayed for convenience of explanation.

  In FIG. 12, the light emitted from the chip LEDs 3 to 6 is the surface on which the chip LEDs 3 to 6 of the silicon submount element 2 are mounted and the surface on which the chip LEDs 3 to 6 of the silicon submount element 2 are mounted. In order to irradiate efficiently in the direction away from the mirror, the mirror structure 61 is disposed in the peripheral portion of the chip LEDs 3 to 6, whereas in FIG. 14, as the optical member so as to cover the chip LEDs 3 to 6 The difference is that a convex lens 16 and a transparent resin portion 17 are provided.

As shown in FIG. 14, the convex lens 16 is provided on the side opposite to the silicon submount element 2 side of the chip LEDs 3 to 6. The surface 16a on the silicon submount element side of the convex lens 16 is formed into a flat surface, and the side opposite to the silicon submount element 2 of the convex lens 16 is formed into a convex surface. Here, the convex lens 16 is formed of a translucent material.
Thus, since the convex lens 16 as an optical member is provided so as to cover the chip LEDs 3 to 6, the light emitted from the chip LEDs 3 to 6 is mounted on the chips LED 3 to 6 of the silicon submount element. Irradiation can be performed more efficiently in a direction away from the surface (upper surface direction of the silicon submount element), high light utilization efficiency can be obtained, and high illuminance and low power consumption can be achieved.

  Further, as shown in FIG. 14, the surface 16a on the silicon submount element side of the convex lens 16 is opposed to be substantially parallel to the surface on which the chips LED3 to 6 of the silicon submount element are mounted. Has been placed. With this configuration, the surface 16a on the silicon submount element side of the convex lens 16 and the surface on which the chip LEDs 3 to 6 of the silicon submount element 2 are mounted serve as positioning points, and the position and direction of the convex lens 16 are aligned. As a result, the convex lens 16 can be easily and accurately attached.

As shown in FIG. 14, a transparent resin material is filled between the surface 16a of the convex lens 16 on the silicon submount element side and the surface on which the chips 3 to 6 of the silicon submount element 2 are mounted. As a result, the transparent resin portion 17 is formed. The convex lens 16 is fixed to the silicon submount element 2 by the transparent resin portion 17. The transparent resin portion 17 is filled with no gap between the surface 16a of the convex lens 16 on the silicon submount element side and the surface on which the chips 3 to 6 of the silicon submount element 2 are mounted. With this configuration, it is possible to easily cope with a case where a plurality of chip LEDs 3 to 6 having different heights are mounted on the silicon submount element. That is, by doing so, the convex lens 16 can be stably held.
In FIG. 14, the chip connection terminal portion 7a and the external connection terminal portion 7b are formed on the wiring sharing pattern 7d.

  Next, a configuration of a modified example of the semiconductor device provided with lenses on the chip LEDs 3 to 6 will be described based on the drawings. FIG. 15 is a cross-sectional view of a modified example of a semiconductor device including a lens. FIG. 15 is similar to FIG. 10 and FIG. 12 as in FIG. 14, and the flexible wiring board 41 shown in FIG. 10 and FIG. 12 is omitted for convenience. Further, in FIG. 15, for convenience of explanation, two chip LEDs having different heights are displayed.

  As shown in FIG. 14, in the semiconductor device provided with lenses on the chip LEDs 3 to 6, the light emitted from the chip LEDs 3 to 6 is converted into the surface side on which the chip LEDs 3 to 6 of the silicon submount element 2 are mounted. Thus, in order to efficiently irradiate the silicon submount element 2 in the direction away from the surface where the chips LED3 to 6 are mounted, the convex lens 16 and the transparent resin portion 17 as optical members are provided so as to cover the chips LED3 to 6. As shown in FIG. 15, in the modified example of the semiconductor device having the lenses on the chip LEDs 3 to 6, the convex lens 16 and the tube as an optical member are provided so as to cover the chip LEDs 3 to 6 as shown in FIG. The difference is that a cover 19 in which the body 18 is integrated is provided.

  As shown in FIG. 15, the cover 19 includes a convex lens 16, a cylindrical body portion 18, a housing portion 20, and a contact portion 18 a. The cylindrical portion 18 is formed in a cylindrical shape from a transparent material. Further, the cylindrical portion 18 is formed so as to extend from the outer peripheral portion of the surface on the silicon submount element 2 side of the convex lens 16 toward the silicon submount element 2 side. In addition, the convex lens 16 and the cylindrical part 18 may be integrally formed by resin molding or the like. In the housing part 20, chip LEDs 3 to 6 are housed. The accommodating portion 20 is formed so as to be surrounded by the surface of the convex lens 16 on the silicon mount element side and the inner wall of the cylindrical portion 18. As shown in FIG. 15, when the chip LEDs 3 to 6 having different heights are mounted on the silicon submount element 2, the accommodating portion 18 is formed so that the highest chip LED is sufficiently accommodated. . The contact portion 18 a is provided at the distal end portion of the cylindrical body portion 18. A contact portion 18 a is in contact with the outer peripheral portion of the chip LEDs 3 to 6 on the silicon submount element 2. Further, the accommodating portion 20 is filled with a transparent resin material without a gap, and a transparent resin portion 17a is formed.

  With this configuration, the contact portion 18a is in contact with the outer peripheral portion of the chip LEDs 3 to 6 on the silicon submount element 2, so that a plurality of LEDs having different heights are mounted on the silicon submount element. Even in this case, the cover 19 can be stably mounted on the silicon submount element 2.

1 is a perspective view of a semiconductor light emitting device according to an example embodiment. 1 is a side view of a semiconductor light emitting device according to an example embodiment. It is a top view which shows the wiring pattern formed on the silicon submount element of the semiconductor light-emitting device based on the example of an embodiment compared with a prior art. It is a top view which shows the 1st modification of the semiconductor light-emitting device which concerns on the embodiment. FIG. 6 is an equivalent circuit diagram of a semiconductor light emitting device according to a first modification. It is a top view which shows the 2nd modification of the semiconductor light-emitting device which concerns on the embodiment. It is a top view which shows the 3rd modification of the semiconductor light-emitting device which concerns on the embodiment. It is a flowchart which shows the manufacture procedure of the semiconductor light-emitting device concerning the example of an embodiment. It is a fragmentary top view of the semiconductor module using the semiconductor light-emitting device concerning the example of an embodiment. It is principal part sectional drawing of the semiconductor module using the semiconductor light-emitting device concerning the example of an embodiment. It is a flowchart which shows the manufacture procedure of the semiconductor module using the semiconductor light-emitting device concerning the example of an embodiment. It is principal part sectional drawing which shows the other example of the semiconductor module using the semiconductor light-emitting device which concerns on the embodiment. It is a side view of the mirror structure with which the semiconductor module of FIG. 12 is equipped. It is sectional drawing of the semiconductor device provided with the lens. It is sectional drawing of the modification of the semiconductor device provided with the lens. It is a perspective view of the semiconductor module which concerns on a well-known example.

Explanation of symbols

1 Semiconductor light-emitting device (semiconductor device)
2 Silicon submount element 2a Chip mounting surface 3-6 chip LED
DESCRIPTION OF SYMBOLS 7 Wiring pattern 7a Chip connection terminal part 7b External connection terminal part 7c Lead part 7d Space 7e Wiring shared pattern 11-14 Protection circuit element 15 Drive circuit element 16 Convex lens 17 Transparent resin part 18 Cylindrical part 18a Contact part 19 Cover 31 Semiconductor Module 32 Metal substrate (heat sink)
41 Flexible wiring board 43 Conductive pattern 44, 45, 46 Through hole

Claims (12)

Comprising: a silicon submount elements required wiring pattern on an insulating oxide layer is formed and the oxide layer formed on the surface, a plurality of semiconductor chips mounted on the silicon submount, a A semiconductor device,
The plurality of semiconductor chips include at least one light emitting diode;
The wiring pattern for each of the semiconductor chips,
A plurality of chip connection terminal portions for connecting the semiconductor chip;
A plurality of external connection terminals for connecting external devices;
A plurality of lead portions to be connected to the corresponding said chip connection terminal portion and the external connection terminal portion has a,
When viewing the corresponding chip connection terminal portion and the external connection terminal portion, the external connection terminal portion is disposed on the outer edge portion on the silicon submount element more than the chip connection terminal portion. ,
The area of the chip connection terminal portion, the chip connection terminal portion and the much larger than the area of the semiconductor chip and overlap each other region,
Adjacent ones are separated by providing a substantially constant space between adjacent chip connection terminal parts, between a chip connection terminal part and a lead part, and between adjacent lead parts. ,
The semiconductor device according to claim 1, wherein the width of the space is substantially equal to or less than the maximum width of the lead portion even at the widest portion . 2. The semiconductor device according to claim 1, wherein an outer peripheral dimension of the chip connection terminal portion is larger than an outer peripheral dimension of a terminal portion formed on the semiconductor chip and connected to the chip connection terminal portion. The semiconductor device according to claim 1, wherein the wiring pattern is made of a copper plating product. 4. The device according to claim 1, wherein at least one light-emitting diode and a drive circuit element for the light-emitting diode are mounted on the silicon submount element as the semiconductor chip. 5. Semiconductor device. 4. The semiconductor chip according to claim 1, wherein at least one light-emitting diode and a protection circuit element for the light-emitting diode are mounted on the silicon submount element as the semiconductor chip. 5. Semiconductor device. The semiconductor device according to claim 4, wherein red, green, and blue light emitting diodes are mounted on the silicon submount element as the light emitting diodes. The semiconductor device according to claim 1, further comprising a heat sink attached to a back surface of the silicon submount element, wherein an area of the heat sink is larger than an area of the silicon submount element. The semiconductor chip is a light emitting diode,
Light emitted from the light emitting diode is efficiently irradiated in a direction away from the surface on which the light emitting diode of the silicon submount element is mounted on the surface side of the silicon submount element on which the light emitting diode is mounted. The semiconductor device according to claim 1, further comprising: an optical member disposed so as to cover the light emitting diode. The semiconductor device according to claim 8, wherein the optical member is made of a translucent material. The optical member includes a lens provided on the side opposite to the silicon submount element side of the light emitting diode,
Of the lenses, the silicon submount element side is formed on a flat surface,
The flat surface on the silicon submount element side of the lens is disposed so as to face the surface of the silicon submount element so as to be substantially parallel to the surface on which the light emitting diode is mounted. The semiconductor device according to claim 8. The semiconductor device according to claim 10, wherein a transparent resin is filled between a flat surface of the lens on the silicon submount element side and a surface of the silicon submount element on which the light emitting diode is mounted. The optical member is
A lens provided on a surface of the light emitting diode opposite to the silicon submount element;
A cylindrical body formed so as to extend from the outer peripheral portion of the surface of the lens on the silicon mount element side toward the silicon submount element side;
A housing portion for housing the light emitting diode, formed by being surrounded by a surface of the lens on the silicon mount element side and an inner wall of the cylindrical body;
The semiconductor device according to claim 8, further comprising: an abutting portion that is provided at a distal end portion of the cylindrical body and abuts on an outer peripheral portion of the light emitting diode on the silicon submount element.

Images