JP5055011B2 - Ion source - Google Patents

Description

  The present invention relates to an inspection / analysis technique for electronic components such as a semiconductor device such as a semiconductor memory, a microprocessor, a semiconductor laser, and a magnetic head, and more particularly to a processing / observation technique using an ion beam for a cross section of a sample.

  High-yield manufacturing is required in the manufacture of semiconductor components such as dynamic random access memory (DRAM), semiconductor devices such as microprocessors and semiconductor lasers, and electronic components such as magnetic heads. This is because a decrease in product yield due to the occurrence of defects leads to a deterioration in profitability. For this reason, the early detection and early countermeasures of the defect and foreign material which cause a defect, and a processing defect become a big subject.

  For example, at the manufacturing site of electronic parts, efforts are focused on finding defects by careful inspection and analyzing the cause of occurrence. In an actual electronic component manufacturing process using a wafer, a wafer in the middle of the process is inspected, and a countermeasure method is investigated by pursuing the cause of an abnormal part such as a circuit pattern defect or foreign matter.

  Usually, a high-resolution scanning electron microscope (SEM: Scanning Electron Microscope, hereinafter abbreviated as SEM) is used for observing an abnormal portion of a sample. In recent years, an SEM and a focused ion beam (FIB) combined machine FIB-SEM apparatus has come to be used. In this FIB-SEM apparatus, the cross section can be observed by SEM by irradiating the FIB and forming a square hole at a desired location.

  For example, Japanese Patent Laid-Open No. 2002-150990 discloses an apparatus for observing / analyzing defects, foreign matters, and the like by forming a square hole in the vicinity of an abnormal portion of a sample by FIB and observing a cross section of the square hole with an SEM apparatus. Is disclosed.

  On the other hand, International Publication No. WO99 / 05506 discloses a technique for extracting a micro sample for TEM observation from a bulk sample using an FIB and a probe.

  In addition, as a technique related to an ion beam processing apparatus, Japanese Patent Laid-Open No. 2-062039 discloses a reaction corresponding to the material of a layer to be processed when performing reactive etching processing locally at an ion beam irradiation section. In order to switch and supply a reactive gas, a configuration is disclosed in which reactive gas cylinders of a plurality of gas types are connected to an ionization chamber via a valve.

JP 2002-150990 A International Publication WO99 / 05506 Japanese Patent Laid-open No. H2-062039

  However, in the technique of processing a sample with an ion beam to form a cross section and observing the cross section with an SEM (or TEM), it is natural that an FIB irradiation system and an SEM irradiation system (or TEM irradiation system) are combined. Have both. For this reason, the apparatus structure becomes complicated and its control is also complicated. As a result, there has been a problem that the apparatus cost increases. Further, regarding the performance of the ion beam and the electron beam, if both can be irradiated to the same point of the sample, each lens interferes spatially. To solve this problem, it was difficult to achieve the maximum performance of each.

  Further, the sample can be observed even if the sample is irradiated with an ion beam without using an electron beam. However, using the types of ions used for processing has the problem that the sample surface is scraped off during observation, making it difficult to observe the desired cross section. Ion beam processing / observation technology solves this problem Has not been realized yet.

  An object of the present invention is to provide a technique for observing a cross section of an electronic component in view of the above-described problems, by processing a sample using an ion beam extracted from the same ion source, and observing a processed portion of the sample. It is to provide an ion beam processing / observation technology that enables it.

  In order to achieve the above object, in the present invention, a gas ion for processing a sample as an apparatus capable of irradiating the sample with at least two kinds of gas ions having different mass numbers without using an electron beam to observe a cross section. An apparatus capable of switching between a beam type and a gas ion beam type when observing a sample.

  As an ion source for realizing switching between a gas ion beam type at the time of sample processing and a gas ion beam type at the time of sample observation, at least two introduction systems including a gas cylinder, a gas pipe, a gas amount adjusting valve, and a stop valve are provided. The gas pressure condition in the vacuum vessel can be set by each gas amount adjustment valve in each gas system, and the gas introduced into the vacuum vessel can be switched by operating the stop valve of each gas system. A certain ion source is used.

  In particular, in order to provide an apparatus capable of processing at high speed, when irradiating a gas ion beam for processing a sample, ions that project the hole shape of the aperture mask in the ion beam irradiation column into a sample shape. A beam processing / observation device.

  In particular, in order to provide a device that reduces the amount of sample being cut during cross-sectional observation, a mechanism for mass-separating a gas ion beam extracted from an ion source is provided, and ions having a relatively small mass number are sampled. The ion beam processing / observation apparatus controls so that ions having a relatively large mass number do not reach the sample when irradiating the sample.

  Sample cross-section processing / observation methods include a step of irradiating a sample with a relatively large mass number to form a cross section substantially perpendicular to the sample surface, and a gas ion having a relatively small mass number. The sample cross-sectional observation method includes the step of irradiating the cross-section to observe the cross-section.

  As described above, the present invention is suitable for observation using an ion beam having a smaller mass number than the ion beam irradiated for the cross-section processing, instead of observing the cross-section using an electron beam as in the prior art. The above-described problems are solved by providing a simple device.

  Hereinafter, characteristic configuration examples of the present invention will be listed.

  (1) An ion source according to the present invention includes a vacuum vessel and a gas supply mechanism that introduces gas into the vacuum vessel. In the ion source that generates gas ions in the vacuum vessel, the gas supply mechanism includes a gas cylinder. And at least two gas introduction systems each including at least a gas amount adjusting valve and a stop valve, and in each of the gas introducing systems, the gas pressure condition in the vacuum vessel is set by each of the gas amount adjusting valves. The gas type introduced into the vacuum vessel can be switched by operating the stop valve of each gas introduction system.

  Further, in the ion source having the above configuration, the ion source is an ion source that generates gas ions by gas discharge, and has a function of storing at least two gas discharge voltages, and the gas discharge voltage can be switched. A control device is provided, and the gas type is switched by the switching operation of the stop valve and the discharge voltage.

  In the ion source having the above-described configuration, one of the gas introduction systems supplies any one gas species of argon, xenon, krypton, neon, oxygen, and nitrogen, and the other of the gas introduction systems includes hydrogen, helium Any one of the above gas species can be supplied.

  (2) The ion beam processing / observation apparatus of the present invention comprises a vacuum vessel and a gas supply mechanism for introducing gas into the vacuum vessel, an ion source for generating gas ions in the vacuum vessel, and a sample. A sample chamber for storing, an ion beam irradiation column connected to the vacuum vessel, for extracting an ion beam from the ion source, and irradiating the sample with the ion beam, and the gas supply mechanism includes a gas cylinder and a gas At least two gas introduction systems equipped with a quantity adjustment valve and a stop valve are provided, and in each gas introduction system, the gas pressure conditions in the vacuum vessel can be individually set by each gas quantity adjustment valve. The gas species introduced into the vacuum vessel can be switched by operating a stop valve of the system, and the gas ion beam species for processing the sample and the sample Characterized in that characterized that it has configured to be able to switch between a gas ion beam species Judging.

  In the ion beam processing / observation apparatus having the above-described configuration, the ion source is an ion source that generates gas ions using gas discharge, and has a function of storing at least two gas discharge voltages. A control device capable of switching the discharge voltage of the gas ion beam, and switching the gas ion beam type by switching the stop valve and the discharge voltage.

  In the ion beam processing / observation apparatus having the above configuration, when irradiating a gas ion beam for processing the sample, a hole shape of a mask provided in the ion beam irradiation column is projected onto the sample. To do.

  In the ion beam processing / observation apparatus having the above configuration, when irradiating a gas ion beam for observing the sample, the ion beam emitted from the ion source is focused on the sample in a point-like manner. .

  (3) The ion beam processing / observation apparatus of the present invention includes an ion source capable of generating at least two types of gas ions having different mass numbers, a gas ion beam extracted from the ion source, and the gas ion beam as a sample. An ion beam irradiation column for irradiation, the ion beam irradiation column includes a mass separation mechanism for mass-separating the gas ion beam drawn from the ion source, and relative to the mass-separated gas ions. The sample cross section can be processed with ions having a large mass number, the sample cross section can be observed with ions having a relatively small mass number, and when irradiating the sample with ions having a relatively small mass number, Control is performed so that ions having a relatively large mass number do not reach the sample.

  In the ion beam processing / observation apparatus having the above-described configuration, the ion source can introduce two or more kinds of gases at the same time.

  In the ion beam processing / observation apparatus having the above-described configuration, at least two types of masks having apertures for limiting the shape of the gas ion beam are provided in the ion beam irradiation column, and the gas having a relatively large mass number is irradiated. It is characterized in that the plate thickness of the aperture when irradiating a gas having a relatively small mass number is made thinner than the plate thickness of the aperture.

  In the ion beam processing / observation apparatus having the above-described configuration, the ions having a relatively large mass number are gas ions including at least one of argon, xenon, krypton, neon, oxygen, and nitrogen, and the relative The ion having a small mass number is either hydrogen or helium, or a mixed gas ion.

  (4) An ion beam processing / observation apparatus of the present invention includes an evacuated vessel and a gas supply mechanism for introducing gas into the evacuated vessel, and generates an ion source by gas discharge in the evacuated vessel. And an ion beam irradiation column for extracting a gas ion beam from the ion source and irradiating the sample with the gas ion beam, wherein the gas supply mechanism supplies a first gas species, The gas introduction system that supplies at least two systems, the gas introduction system that supplies the two gas species, and the gas species supplied from each gas introduction system into the vacuum vessel during processing of the sample by the gas ion beam and during observation It has the means to switch according to.

  Further, in the ion beam processing / observation apparatus having the above configuration, the switching unit has a function of storing at least two discharge voltages of the gas, and includes a control device capable of switching the gas discharge voltage, and the discharge voltage The gas species are switched based on the switching operation.

  In the ion beam processing / observation apparatus having the above configuration, the first gas species is a gas containing at least one of argon, xenon, krypton, neon, oxygen, and nitrogen, and the second gas species is , Hydrogen or helium, or a mixed gas.

  (5) The sample cross-sectional observation method according to the present invention includes a step of irradiating a sample with a gas ion beam extracted from an ion source capable of generating at least two types of gas ions having different mass numbers. Irradiating the sample with a gas ion having a relatively large mass number among at least two kinds of gas ions to form a cross section substantially perpendicular to the sample surface; and a gas ion having a relatively small mass number Irradiating the cross section to observe the cross section.

  In the sample cross-sectional observation method having the above-described configuration, the cross-section is observed by irradiating the ions having a relatively small mass number with a current smaller than the maximum current when the ions having a relatively large mass number are irradiated. It is characterized by that.

  Further, in the sample cross-sectional observation method having the above-described configuration, the step of simultaneously generating at least two types of gas ions with the ion source and the mass separation of at least two types of gas ions having different mass numbers are performed to obtain a relative mass number. Irradiating the sample with a large gas ion beam to process a cross section substantially perpendicular to the sample surface, and changing the mass separation condition to irradiate the cross section with a gas ion beam having a relatively small mass number Observing a cross section.

  Further, in the sample cross-sectional observation method having the above configuration, the ions having a relatively large mass number are gas ions including at least one of argon, xenon, krypton, neon, oxygen, and nitrogen, and the relatively mass The small number of ions is either hydrogen or helium, or mixed gas ions.

  According to the present invention, in a technique for observing a cross section of an electronic component such as a semiconductor device such as a semiconductor memory, a microprocessor, a semiconductor laser, and a magnetic head, a sample is extracted using an ion beam extracted from the same ion source. To realize an ion beam processing / observation technology that enables observation of the part to be processed of the sample.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

Example 1
FIG. 1 shows an ion beam processing / observation apparatus of this embodiment. In this embodiment, an apparatus capable of irradiating a sample with two types of gas ions using a duoplasmatron 1 as a plasma ion source will be described. In general, the brightness of a plasma ion source is at least two to three orders of magnitude lower than that of a liquid metal ion source such as Ga. Therefore, in this embodiment, a case will be described in which a stencil mask 5 having an opening with a predetermined shape is inserted in the middle of the ion beam irradiation system in the ion beam column 21 and a shaped beam in which the shape of the opening is projected onto the sample is used. . Here, selecting an element species such as inert gas, oxygen, or nitrogen as the ion species of the ion source will not affect the electrical characteristics of the device, so the processed wafer is returned to the process after processing with an ion beam. However, there are few things that cause defects.

  A vacuum sample chamber 23 is disposed below the ion beam column 21. In the vacuum sample chamber 23, a first sample stage 13 on which the sample 11 is placed, a secondary particle detector 12, a deposition gas source 18, and the like. Is stored. In addition, a probe 15 for transporting a sample piece extracted from the sample 11 on the first sample stage 13 using ion beam processing, a manipulator 16 for driving the probe 15, and a micro sample 303 are mounted on the apparatus. A second sample stage 24 is provided. Needless to say, the inside of the ion beam column 21 is also maintained in a vacuum.

  As devices for controlling this device, a duoplasmatron control device 91, a lens control device 94, a stencil mask control device 95, a first sample stage control device 14, a manipulator control device 17, a deposition gas source control device 19, a secondary electron detection device. Control devices 27 and 28 and a calculation processing device 98 are arranged. Here, the calculation processing device 98 includes a display that displays an image generated based on the detection signal of the secondary particle detector 12, information input by the information input means, and the like.

  Here, the first sample stage 13 includes a linear movement mechanism in two orthogonal directions within the sample placement surface, a linear movement mechanism in a direction perpendicular to the sample placement surface, a sample placement surface rotation mechanism, and a tilt axis. And a tilt function capable of changing the irradiation angle of the ion beam to the sample by rotating the sample to the first position, and these controls are performed by the first sample stage control device 14 in response to a command from the calculation processing device 98. Further, since the second sample stage 24 is disposed on the first sample stay 13, the linear movement in two orthogonal directions within the first sample mounting surface and the straight line in the direction perpendicular to the sample mounting surface are provided. The movement, the rotation within the sample mounting surface, and the tilt by rotating around the tilt axis are made possible by moving, rotating, and tilting the first sample stage 13.

  FIG. 2 shows details of an ion source having a gas supply mechanism according to the present invention. The gas supply mechanism has two systems consisting of gas cylinders 53 and 54 having cylinder valves 51 and 52, pressure reducing valves 55 and 56, stop valves 57 and 58, and needle valves 59 and 60 capable of adjusting a minute gas flow rate. Is provided. The first gas cylinder 53 in one system is filled with argon, xenon, krypton, neon, oxygen, or nitrogen at a high pressure. The other second gas cylinder 54 is filled with helium or hydrogen at a high pressure. The duoplasmatron includes a cathode 71, an intermediate electrode 72, an anode 73, a magnet 74, and the like. In this embodiment, an example in which the first gas cylinder is filled with xenon and the second gas cylinder is filled with hydrogen will be described.

  Next, the operation of the ion source will be described. The cylinder valve 51 of the xenon cylinder is opened, and then the pressure in the gas pipe is adjusted by the pressure reducing valve 55. Next, the stop valve 57 for opening and closing the gas supply to the ion source is opened. Finally, the gas flow rate into the ion source is adjusted by the needle valve 59. A gas discharge occurs when a voltage of about 1 kV is applied between the cathode 71 and the anode 73 by adjusting the degree of vacuum of the ion source to several Pa. Xenon ions are extracted from the discharge plasma through the anode hole. That is, a high voltage of 20 kV is applied to the ion source, and the ion beam 75 is extracted toward the extraction electrode 76 having the ground potential. In addition, the 20 kV voltage of the ion source voltage is applied within the dotted line 85 in FIG. Here, the gas flow rate is adjusted by the needle valve 59 so that the amount of the xenon ion beam is maximized, and the discharge voltage is also adjusted. The needle valve adjustment knob 61 is fixed, and the discharge voltage is stored in the control device 91.

  Next, the stop valve is closed, the discharge voltage is released, the discharge of xenon is stopped, and the bypass valve 81 is opened, and the xenon in the ion source is exhausted by the vacuum pump 82. The ion source column is also evacuated by the vacuum pump 83.

  Next, similarly for the hydrogen gas, the hydrogen cylinder valve 52 is opened, the pressure in the gas pipe is adjusted by the pressure reducing valve 56, and the stop valve 58 is opened. Finally, the gas flow into the ion source is adjusted by the needle valve 60 so that gas discharge occurs. As for xenon, the gas flow rate is adjusted by the needle valve 60 so that the amount of hydrogen ion beam is maximized, and the discharge voltage is also adjusted. Again, the needle valve adjustment knob 62 is fixed and the discharge voltage is stored in the control device 91.

  Next, in order to switch to the xenon beam, similarly, the stop valve 58 is closed, the discharge voltage is canceled to stop the discharge of hydrogen, and the bypass valve 81 is opened to exhaust the hydrogen in the ion source. Then, to generate xenon ions, the xenon stop valve 57 is opened to switch to the stored discharge voltage. In this way, the gas type is switched by the switching operation of the stop valve and the discharge voltage, and each needle valve is fixed.

  Here, in general, the amount of gas in the ion source differs between xenon and hydrogen under conditions that maximize the amount of ion beam. Further, a needle valve that adjusts a minute gas flow rate is not reproducible. For this reason, when a single needle valve is used to switch the gas type, it is necessary to adjust the needle valve each time it is switched, making it difficult to quickly switch the gas type. In the present embodiment, two types of independent gas supply systems are provided, and each is adjusted to the optimum condition in advance, thereby realizing rapid gas type switching.

  These gas type switching operations can be intensively performed by the calculation processing device 98. That is, a gas type, a gas type changeover switch, a button, and the like are displayed on the display of the calculation processing device 98. Then, when a gas type on the display is selected or a changeover switch is selected, an operation for switching the gas type is automatically performed.

  Next, the operation of the ion beam irradiation system will be described. The operation of the ion beam irradiation system is controlled by a command from the calculation processing device 98. First, the xenon ion beam extracted from the duoplasmatron 1 of the ion source is focused near the center of the objective lens 3 by the condenser lens 2. That is, the voltage applied to the electrode of the condenser lens 2 is set by the calculation processing device to a value obtained by calculation in advance so as to satisfy this condition. Then, the xenon ion beam passes through the stencil mask 5 having a rectangular hole. The objective lens 3 is controlled under conditions for projecting the stencil mask 5 onto the sample. Again, the voltage applied to the electrodes of the objective lens 3 is set by the calculation processing device 98 to a value obtained by calculation in advance so as to satisfy the above conditions. In this way, a rectangular shaped ion beam is irradiated onto the sample. Further, since a shaped beam is used here, the sample can be irradiated with a large current beam of about 100 nA. When this shaped ion beam is continuously irradiated, a rectangular hole is formed in the sample. Here, the rectangular hole shape is finished so as to be sufficiently deeper than the depth region for observation and to be perpendicular to the sample surface.

  Next, the sample stage controller tilts the first sample stage 13 as shown in FIG. 3 so that the sample cross section formed by the ion beam can be observed from the ion beam irradiation system. Further, the operation of the ion source is switched from xenon to hydrogen by the procedure described above. Further, the voltage conditions of the condenser lens 2 and the objective lens 3 of the ion beam are changed, and the anode hole of the ion source is used as a light source, and this is reduced and projected onto the sample by the condenser lens and the objective lens. As a result, it is possible to obtain a fine spot-like beam on the sample that is 1 / 100th of the anode hole diameter. In this case, the current is as small as several pA, but the beam diameter can be as small as several tens of nm. A detailed observation image can be obtained by scanning the fine ion beam on the sample cross section. That is, high-resolution observation is realized by using a smaller focused ion beam current for observation than for the shaped ion beam current used for processing.

  Here, when the xenon ion beam used for processing is used for observation, the sample surface is scraped off and detailed observation becomes difficult. However, in this embodiment, since the ratio of scraping by using a hydrogen ion beam decreases, it is detailed. Observation becomes possible.

  Note that the observation function using a hydrogen ion beam can be used not only for observing a cross section of a sample, but also for observing the structure, foreign matter, and defects of the sample surface.

  In this example, the ion source was reduced and projected onto the sample to form a dot-like hydrogen ion beam, and this was scanned on the sample to obtain a sample image. However, a mask hole was formed in the stencil mask. A small limiting mechanism may be provided, and the sample image may be acquired by scanning the sample with a shaped beam projected through the hole. In this case, it is not necessary to change the lens voltage during processing and observation, and there is no fear that the beam irradiation axis shifts, and the apparatus control is stabilized.

  As a mechanism for restricting the mask hole to be small, a stencil mask structure having a hole with a small diameter in advance or a structure in which another fine aperture is overlaid on the stencil mask may be used. When the stencil mask is irradiated with an ion beam, the hole is enlarged by sputtering, or the mask plate thickness is reduced, and the hole shape is finally deformed. For this reason, it is preferable that the stencil mask plate is thick. However, it is generally difficult to make fine holes in a thick plate. For this reason, when irradiating ions with a relatively large mass number, such as xenon, at the time of processing, a mask with a relatively thick plate is used, while on the other hand, against hydrogen with a smaller sputtering rate than xenon. Uses a thin aperture. Thereby, it becomes possible to form a finer hole in the aperture, so that a fine beam can be obtained and observed with high resolution.

  In this embodiment, a duoplasmatron is used as an ion source. However, a plasma ion source using microwaves, an inductively coupled plasma ion source, a multicusp ion source, a field ionization ion source, and the like are also used. Effects can be obtained.

  Further, the secondary electron detector may include not only secondary electrons but also reflected electrons and secondary ions. The secondary electron detector control device is provided with two systems 27 and 28. On the other hand, in the secondary electron detector control device 27, the detector signal is DC amplified. The other secondary electron detector controller 28 measures the signal intensity by counting the pulses of the detector signal. In the latter case, since the number of detection particles is directly counted and detector noise can be removed, the detection sensitivity is high. Conventionally, it was not necessary to count pulses with a sufficiently large number of ion beams and electron beams applied to a sample. However, particularly when a fine hydrogen ion beam is irradiated, since the ion current is small, the detector controller 28 that measures the signal intensity by counting pulses is effective. Thereby, observation with higher resolution than before is possible. However, when counting pulses, the number of pulses that can be counted is limited to about 1 million per second, and cannot be counted with a large current of the picoampere level or higher. Therefore, the two control devices are switched in accordance with the magnitude of the ion current to be irradiated. This can be switched automatically by the computer 98 by monitoring the current of charged particles irradiated on the sample.

  Note that the minute sample 303 can be extracted from the sample 11 and placed on the second stage 24 using the ion beam processing, the probe 15 at the tip of the manipulator 16 and the ion beam assist deposition film. A micro sample can be made into a sample for a transmission electron microscope by thin film processing. This procedure will be described in Example 2 described later.

  As described above, according to the ion beam processing / observation apparatus and the processing observation method described in this embodiment, it is possible to process a sample cross section with a xenon-shaped ion beam and to observe a cross section with a hydrogen fine ion beam. That is, if a cross section of an abnormal portion such as a defect or foreign matter in a semiconductor circuit pattern is formed, the cross section of the defect or foreign matter can be observed and the cause of the occurrence can be analyzed.

In particular, in this embodiment, by using a shaped ion beam, high-precision processing can be performed with a larger current. In particular, even with an ion source with low brightness, the beam current can be increased and the processing accuracy can be increased, so that the effect of enabling cross-section processing in a short time can be achieved. In the semiconductor device manufacturing process, an ion beam of an inert gas or a gas element such as oxygen or nitrogen that does not significantly affect the characteristics of the sample is used instead of Ga, which is likely to cause defects. Means that you can. Therefore, to improve the yield of semiconductor devices, etc., it is possible to form a cross-section with an ion beam without contaminating the wafer with a metal such as Ga, and the cross-section can be observed without cleaving the wafer. Therefore, there is provided a new inspection / analysis method that does not cause waste even when the wafer from which a sample for inspection is taken out is returned to the process. Further, evaluation can be performed without cleaving the wafer, no new defects are generated, and expensive wafers are not wasted. As a result, the manufacturing yield of the semiconductor device is improved (Example 2).
In the ion beam processing / observation apparatus having the configuration shown in the first embodiment, the ion beam irradiation system is arranged in the vertical direction. In this embodiment, the ion beam irradiation system is inclined from the vertical direction. An apparatus in which the stage surface is fixed in the horizontal direction will be described.

  Further, in this embodiment, an ion beam processing / observation apparatus is provided that removes ions having a large mass number when a mass separator is provided in the course of the ion beam and is irradiated with ions having a relatively small mass number. To do.

  In this embodiment, a means for extracting a minute sample from a sample to produce a transmission electron microscope (TEM) sample will also be described.

  In this embodiment, a molded ion beam obtained by projecting the shape of the mask opening onto the sample is also used.

  FIG. 4 shows an ion beam processing / observation apparatus of the present embodiment. This ion beam processing / observation apparatus includes an ion source duoplasmatron 1 that emits gas ions such as argon, neon, xenon, krypton, oxygen, nitrogen, helium, hydrogen, etc., a mass analyzer 300, an ion source aperture 26, and a condenser. An ion beam irradiation system including a lens 2, an objective lens 3, an ion beam scanning deflector 4, a stencil mask 5, and a lens barrel for an ion beam column 21 for storing these is arranged. The mass analyzer 300 of the present embodiment is a so-called ExB mass separator in which the electric field and the magnetic field are perpendicular to the ion beam, and the electric field direction and the magnetic field direction are perpendicular to each other. In this embodiment, a permanent magnet is used, but an electromagnet may be used instead. Further, mass separation using only a magnetic field may be used.

  In addition, this apparatus includes an electron gun 7, an electron lens 9 for focusing an electron beam 8 emitted from the electron gun 7, an electron beam scanning deflector 10, an electron beam column (SEM column) 22 for storing them, and the like. Equipped with an electron beam irradiation system. A vacuum sample chamber 23 is disposed below the ion beam column 21 and the SEM column 22, and in the vacuum sample chamber 23, a first sample stage 13 on which the sample 11 is placed, a secondary particle detector 12, and a deposition gas. A source 18 and the like are stored. Further, in this apparatus, a probe 15 for transporting a sample piece extracted from a sample on the first sample stage using ion beam processing, a manipulator 16 for driving the probe 15, and a second sample on which a micro sample 303 is mounted. A sample stage 24 is provided. Needless to say, the inside of the ion beam column 21 is also maintained in a vacuum. Here, in the present apparatus, the sample irradiation point of the ion beam and the electron beam sample irradiation point are located at positions away from the center of the sample placement surface, and are located at different positions. That is, the ion beam irradiation axis 301 and the electron beam irradiation axis 302 do not intersect.

  As a device for controlling this device, a duoplasmatron control device 91, a mass separator control device 62, an ion source aperture control device 93, a lens control device 94, a stencil mask control device 95, an ion beam scanning deflector control device 96, a first 1 sample stage controller 14, second sample stage controller 25, manipulator controller 17, deposition gas source controller 18, secondary electron detector controllers 27 and 28, electron beam irradiation system controller 97, and calculation processing A device 98 or the like is arranged. Here, the calculation processing device 98 includes a display that displays an image generated based on the detection signal of the secondary particle detector, information input by the information input means, and the like. Note that reference numeral 30 in the figure denotes a sample height measuring instrument control device 30 that controls the sample height measuring instrument 29.

  In this embodiment, an ion source having a gas supply system as shown in FIG. 5 will be described. This gas supply mechanism can adjust two types of gas cylinders 53 and 54 having cylinder valves 51 and 52, pressure reducing valves 55 and 56 of each cylinder, stop valves 57 and 58 of each gas system, and a minute gas flow rate. The needle valve 59 is. The first gas cylinder 53 is filled with argon, xenon, krypton, neon, oxygen, or nitrogen at a high pressure. The other second gas cylinder 54 is filled with helium or hydrogen at a high pressure. In this embodiment, an example in which the first gas cylinder is filled with argon and the second gas cylinder is filled with helium will be described.

  Next, the operation of the ion source will be described. The cylinder valve 51 of the argon cylinder 53 is opened, and then the pressure in the gas pipe is adjusted by the pressure reducing valve 55. Next, the stop valve 57 for opening and closing the gas supply to the ion source is opened. Finally, the gas flow rate into the ion source is adjusted by the needle valve 59. When the degree of vacuum of the ion source is adjusted to several Pa and a voltage of about 1 kV is applied between the cathode 71 and the anode 73, gas discharge occurs. Argon ions are extracted from the discharge plasma through the anode hole. In addition, the 20 kV voltage of the ion source voltage is applied within the dotted line 85 in FIG. Here, the gas flow rate is adjusted by the needle valve 59 so that the amount of the ion beam 75 is maximized, and the discharge voltage is also adjusted. Here, the needle valve adjustment knob 61 is fixed, and the discharge voltage is stored in the control device 91.

  Next, the stop valve 57 is closed, the application of the discharge voltage is canceled to stop the discharge of argon, and the bypass valve 81 is opened to exhaust the argon in the ion source. The ion source column is also evacuated by the vacuum pump 83.

  Next, similarly for the helium gas, the helium cylinder valve 52 is opened, the pressure in the gas pipe is adjusted by the pressure reducing valve 56, and the stop valve 58 is opened. Finally, the needle valve 59 remains fixed. The gas flow rate into the ion source is adjusted by the secondary pressure of the pressure reducing valve 56 so that gas discharge occurs. Also for helium, the gas flow rate is adjusted so that the amount of the helium ion beam is maximized, the discharge voltage is also adjusted, and the discharge voltage is stored in the control device 91.

  Next, in order to switch to the argon beam, similarly, the stop valve 58 is closed, the discharge voltage is released to stop the discharge of helium, and the bypass valve is opened to exhaust the helium in the ion source. Then, in order to generate argon ions, the argon stop valve is opened to switch to the stored discharge voltage. As described above, the gas type is switched by the switching operation of the stop valve and the discharge voltage, and the needle valve 59 is fixed.

  Here, generally, the conditions for maximizing the amount of ion beam in the ion source differ between argon and helium. In this embodiment, the gas type is switched by one needle valve, so the accuracy of adjusting the gas amount is not good compared to the case of having the two-system gas supply mechanism of the first embodiment, but there is only one needle valve. It has the effect of simplifying the structure.

  Next, the operation of the ion beam irradiation system will be described. First, an argon ion beam is extracted from the duoplasmatron 1. The mass separator 300 is operated to allow the argon ion beam to pass. The function of the mass separator is executed by the operation of the mass separator control device according to a command from the calculation processing device. Then, the argon ion beam that has passed through the mass analyzer 300 is focused near the center of the objective lens 3 by the condenser lens 2. That is, the voltage applied to the electrode of the condenser lens 2 is set by the calculation processing device 98 to a value obtained by calculation in advance so as to satisfy this condition. The ion beam then passes through the stencil mask 5 having a rectangular hole. The objective lens 3 is controlled under conditions for projecting the stencil mask 5 onto the sample. Again, the voltage applied to the electrodes of the objective lens 3 is set by the calculation processing device 98 to a value obtained by calculation in advance so as to satisfy the above conditions. In this way, a rectangular shaped ion beam is irradiated onto the sample. Since a shaped beam is used, the sample can be irradiated with a large current beam of about 100 nA. When this shaped ion beam is continuously irradiated, a rectangular hole is formed in the sample. Here, the rectangular hole shape is finished so as to be sufficiently deeper than the depth region for observation and to be perpendicular to the sample surface.

  Next, the first stage 13 is rotated 90 degrees as shown in FIG. 6 by the sample stage control device so that the sample cross section formed by the ion beam can be observed from the ion beam irradiation system. FIG. 6 shows a side view and a top view, respectively, during processing with an ion beam and during observation. A state in which the rectangular hole 202 is formed by irradiating the sample 11 with the argon ion beam 201 from the inclined direction is shown in the left diagram of FIG. Next, the state rotated 90 degrees is shown in the right figure of FIG.

  The operation of the ion source is switched from argon to helium by the procedure as described above, and the mass analyzer 300 is operated so that the helium ion beam passes. Further, the voltage conditions of the condenser lens and objective lens of the ion beam are changed, and the anode hole of the ion source is used as a light source, and this is reduced and projected onto the sample by the condenser lens and the objective lens. As a result, it is possible to obtain a minute spot-like beam on the sample that is 1 / 100th of the anode hole diameter. In this case, the current is as small as several pA, but the beam diameter can be as small as several tens of nm. A detailed cross-sectional observation image can be obtained by irradiating and scanning this fine helium ion beam 203 on the vertical cross section of the sample as shown in the right figure of FIG. That is, high-resolution observation is realized by using a smaller focused ion beam current for observation than for the shaped ion beam current used for processing.

  Here, when a mass spectrometer is not used, residual argon in the ion source may be ionized and irradiated onto the sample. Although the sample surface may be scraped off due to the argon ions, detailed observation may be difficult. However, in this embodiment, since only the helium ions are used for observation by the mass analyzer, the ratio of scraping is reduced, so that detailed observation is possible. Is possible.

  The observation function using a helium ion beam can be used not only for observing a cross section of a sample, but also for observing the structure, foreign matter, and defects on the sample surface.

  Further, it goes without saying that the apparatus of this embodiment is also effective when using ion sources of two systems of gas supply mechanisms as shown in FIG. Alternatively, argon and helium gas may be mixed and introduced into the ion source at the same time, or a previously prepared mixed gas of argon and helium may be introduced to simultaneously generate ions of argon and helium. Also in this case, when the helium ion beam is irradiated, there is an effect that the sample is not irradiated with the argon ion beam. In this case, it is not always easy to maximize the ion current for each ion species, but in particular, an effect that the ion species can be switched only by the mass analyzer can be achieved.

  Next, the operation of the electron beam irradiation system will be described. An electron beam 8 emitted from the electron gun 7 is focused by an electron lens 9 and irradiated onto a sample 11. At this time, the electron beam 8 is irradiated onto the sample surface while being scanned by the electron beam scanning deflector 10, secondary electrons emitted from the sample surface are detected by the secondary particle detector 12, and the intensity is converted into the luminance of the image. Once converted, the sample can be observed. According to the sample observation function using the electron beam, it is possible to observe an abnormal portion such as a defect or a foreign matter in a circuit pattern formed on the sample. In particular, since this apparatus is structured to irradiate the sample with an electron beam from the vertical direction, it is suitable for obtaining information on abnormality in a hole having a large ratio of depth to hole diameter.

  In this apparatus, the observation function using an electron beam is also used for observing a cross section of a sample defect or foreign material, observing a cross section of a thin film sample for an electron microscope, and grasping a processing end point. That is, in this apparatus, the sample cross section can be observed not only with an ion beam but also with an electron beam. In general, observation images using ion beams have a high element contrast, while image observations using electron beams have a high spatial resolution, and this device has the advantage of enabling both observations. Can play.

  Further, in this apparatus, the sample irradiation point of the ion beam and the electron beam sample irradiation point are located at positions away from the center of the sample mounting surface, and exist at different positions. For this reason, each objective lens can be disposed in the vicinity of the sample without causing spatial interference, so that the work distance of each objective lens can be shortened. That is, the ion beam and electron beam are excellent in miniaturization or high current performance.

  Next, a procedure for extracting a micro sample from a sample on the first stage using a shaped ion beam will be described with reference to FIGS. 7A and 7B. 7A and 7B are top views as viewed from above the sample, and right views of FIGS. 7A and 7B are side views as viewed from the side of the sample. Since this apparatus uses a micron-sized ion beam, it is not always appropriate to mark the processing position with the ion beam. Therefore, this apparatus uses a nanometer-sized electron beam.

  First, the first sample stage 13 is moved so that a region for extracting a micro sample can be irradiated with an electron beam. In FIG. 7A, two end marks 130 indicating the observation cross section are formed by irradiating the electron beam 8 while supplying the deposition gas from the deposition gas source 18 to form a deposition film on the surface of the sample 11. Make one. That is, the observation position is specified by the mark while observing the sample image on the display screen of the calculation processing apparatus. In this way, although it is a processing device using a micrometer-sized ion beam, marking on the nanometer order has become possible through cooperation with an electron beam.

  Next, the first sample stage 13 is moved so that the first shaped ion beam 131 of argon can be irradiated in the vicinity of the mark. Here, the stencil mask is switched to the hole having the shape shown in FIG. At this time, a current of about 200 nA is obtained. Therefore, as shown in FIG. 7A (b), the first molded ion beam 131 of argon is irradiated so as to include two marks on the inside thereof, and a first molded hole 132 (molded) having a depth of about 15 μm is formed. Hole A) is provided.

  Next, the ion beam is switched from argon to helium, and the stencil mask is switched to the circular hole shown in FIG. At this time, the beam has a substantially circular cross section. However, since the ion beam is inclined on the sample because it is inclined with respect to the sample, the sample can be observed by scanning it. The switching operation is executed when the apparatus user inputs a switching command via the information input means or when the calculation control apparatus transmits a switching control signal to the mask control mechanism.

  Next, as shown in (c) of FIG. 7A, the sample is rotated about 180 degrees by the sample stage control device with the axis perpendicular to the sample surface as the rotation axis. Here, the first formed hole is recognized by performing image processing on a secondary electron image formed by secondary electrons generated from the sample by irradiation with an elliptical helium ion beam. In FIG. 7A (d), while observing the secondary electron image obtained by irradiating the helium ion beam 133, the position of the probe 15 is moved by the probe control device and transferred to the end of the sample to be extracted. Touch the probe at the tip.

  Here, since the helium ion beam is used instead of the argon ion beam, the probe is less likely to be damaged by the ion beam irradiation. Then, in order to fix the probe to the sample to be extracted, the ion beam is scanned in the region including the probe tip while flowing the deposition gas. In this way, the deposition film 134 is formed in the ion beam irradiation region, and the probe and the sample to be extracted are connected.

  Next, the ion beam is switched from helium to argon, and the stencil mask is adjusted in advance so that the sample irradiation position of the shaped beam 135 having the shape shown in FIG. In FIG. 7B (e), the ion beam irradiation position is controlled by the ion beam control device based on the sample shape information obtained by the irradiation of the elliptical beam, and two marks are put inside it together with the first shaped beam. A second molding ion beam 135 is irradiated so as to include a second molding hole 136 (molding hole B) having a depth of about 15 μm. This molding hole B intersects with the molding hole A previously formed by the first molding ion beam. 7A to 7B (e), the wedge-shaped micro sample 137 having a triangular cross section including the mark is held by the probe.

  Next, the ion beam is switched from argon to helium, and the stencil mask is switched to the circular hole shown in FIG. As shown in FIG. 7B (f), while observing the secondary electron image obtained by irradiating the ion beam, the probe position is moved by the probe control device, and the micro sample 137 is extracted by being connected to the tip of the probe. Is moved to the sample holder 140 on the second stage. In FIG. 7B (g), the helium ion beam is irradiated to the contact portion between the micro sample 137 and the sample holder 140 while introducing the deposition gas. Here, a deposition film 138 is formed in the ion beam irradiation region, and the micro sample 137 can be connected to the sample holder 140.

  Next, as shown in (h) of FIG. 7B, the ion beam is switched from helium to argon, and the deposition film connecting the probe and the micro sample is irradiated with the argon ion beam to remove the sputter. 15 is separated from the micro sample 137.

  The ion beam apparatus according to the present embodiment is characterized in that the ion beam column is arranged so as to be inclined with respect to the sample. In the case of this structure, when a minute sample is extracted with an ion beam, it is possible to achieve an effect that it can be realized by rotating the stage without tilting the sample stage.

  The apparatus includes a probe 15 for transporting a micro sample 137 extracted from the sample 11 on the first sample stage 13 using ion beam processing, and a second sample stage 24 on which the micro sample is placed, The second sample stage rotates around the tilt axis and has a tilt function that can vary the irradiation angle of the ion beam to the micro sample.

  Further, if the cross section is oriented in the direction perpendicular to the helium ion beam using the tilt function of the second stage, the cross section can be observed in detail from the vertical direction. In other words, in this device, cross-section cutting with an argon ion beam and observation with a helium ion beam can be repeated to obtain three-dimensional information in the sample, and a three-dimensional image is constructed using a plurality of two-dimensional observation images. It is also possible to do.

  Next, in sample preparation for an electron microscope, processing is performed so that the sample thickness is reduced while sequentially switching three types of stencil mask holes prepared so that the beam current decreases in the order of rough processing, intermediate processing, and finishing processing. Finally, the observation region is thinly finished so as to be a wall having a thickness of about 100 nm or less to obtain an electron microscope sample. As a result of the above processing, a TEM observation region is completed. In addition, although the example which the operator controlled the apparatus using the input device of the calculation processing apparatus was demonstrated above, the memory | storage means, such as a memory, were provided in the calculation processing apparatus, and the control sequence of the control conditions of all the processes was carried out. By storing as, sampling can be performed fully automatically.

  After performing the thin film processing as described above, the micro sample is introduced into the sample chamber of the TEM. In TEM observation, cross sections such as defects and foreign substances can be observed with higher resolution than in SEM observation, and the cause of the defect can be analyzed in more detail from the observation results.

  In this example, an argon ion beam was used during processing, but it is clear that similar effects can be obtained with nitrogen, oxygen, neon, xenon, krypton, etc. Since the ratio of the isotope having a mass number of 40 is as high as 99.6%, there is an effect that the decrease in current is small even after mass separation. In addition, a helium ion beam was used for observation, but it is clear that the same effect can be obtained with hydrogen. However, in the case of a helium beam, the number of molecular ions is small and the ratio of ions having a helium mass number of 4 is used. Therefore, even if the mass is separated, there is an effect that there is little decrease in current.

  In this embodiment, the case of using a duoplasma ion source has been described. However, a microwave plasma ion source, an inductively coupled plasma ion source, a multicusp ion source, a field ionization ion source, or the like is used. The same effect can be obtained.

  In addition, this apparatus includes a transmission ion detector 1201 that detects hydrogen ions that have passed through the sample, so that a so-called scanning transmission ion microscope image can be obtained. There is an effect that sample observation with high spatial resolution becomes possible.

  As described above, according to the ion beam processing / observation apparatus, processing / observation method, and micro sample preparation method described in the present embodiment, in addition to the effects described in the first embodiment, the mass number is relatively large when the helium ion beam is irradiated. The effect of avoiding ion irradiation can be obtained, and the time required for evacuation and replacement of argon ions when switching to a helium ion beam can be shortened, so that the time required for ion beam switching can be shortened. Also, impurity ions such as metal ions generated in the ion source are removed by the mass separator and do not reach the sample, and the sample is not contaminated with impurities, so that the device manufacturing yield is not lowered. be able to.

(Example 3)
FIG. 9 shows an example in which a field ionization ion source is used as the ion source. In the present embodiment, the gas supply mechanism has the same configuration as that described in the first embodiment, and therefore description of its operation is omitted.

  In this ion source, the tip of the tungsten ion emitter tip 402 is sharply processed. Further, the ion emitter tip 402 is cooled to about several tens K by the refrigerator 401. Further, when the gas is cooled and a strong electric field is applied to the ion emitter tip 402, an ion beam can be extracted from the vicinity of the tip of the emitter tip.

  At this time, when extracting helium ions or hydrogen ions, an atomic nanopyramid structure 404 is formed at the tip 403 of the ion emitter tip as shown in FIG. In this way, ions are generated only in the vicinity of 1 to 3 atoms, so that an ion source with extremely high luminance is realized. That is, an ion beam 405 having a beam diameter of 1 nm or less can be obtained on the sample, and observation with very high spatial resolution becomes possible.

  However, the ion mass is small and the ion beam current is small, which is not suitable for processing. Therefore, in processing, the gas supplied to the ion source is switched from helium to argon, and the nanopyramid structure at the tip of the ion emitter tip is removed by electrolytic evaporation. In this way, ions are generated from a relatively wide region near the tip of the ion emitter tip, so that a nanoampere-order argon ion beam 406 can be obtained and processed. Next, in order to extract a fine helium ion beam, an atomic nanopyramid structure may be formed again. As a method of forming the nanopyramid structure, there is a method such as vapor deposition of palladium or platinum on tungsten and high-temperature annealing.

  As described above, according to the ion beam processing / observation apparatus, the processing / observation method, and the micro sample preparation method described in the present embodiment, in addition to the effects described in the first embodiment, an extremely fine helium or hydrogen ion beam can be obtained. In addition, since an ion beam of a large current such as argon or xenon can be obtained at the time of processing, it is possible to achieve an effect that extremely fine processing and ultrahigh resolution observation are possible.

  As described above in detail, according to the present invention, an apparatus for observing a cross section of an electronic component is provided that can be manufactured at a lower cost than the conventional apparatus. In addition, a sample cross-sectional observation method that can be realized at a lower cost than conventional methods is provided. Also provided is an ion beam processing / observation apparatus that shortens the cross-section forming processing time by the ion beam.

  In addition, a new wafer that uses an inert gas, oxygen, or nitrogen ions for the ion beam is not wasted for evaluation, and no defect is generated even if the wafer from which the sample for inspection is taken out is returned to the process. Inspection and analysis methods are provided. Further, by using the electronic component manufacturing method according to the present invention, the wafer can be evaluated without cleaving, no new defect is generated, and an expensive wafer is not wasted. As a result, the manufacturing yield of electronic components is improved.

  The ion beam processing / observation apparatus and the sample cross-sectional observation method according to the present invention include the following configuration examples.

  (1) A sample stage for holding a sample, an ion source for generating an ion beam of at least two kinds of gases, and an irradiation optical system for irradiating the sample held on the sample stage with an ion beam, The ion beam irradiation system is a projection ion beam irradiation system that irradiates the sample with an ion beam through a mask having an aperture of a desired shape, and a mask driving mechanism or an aperture driving mechanism in which at least two or more ion beam lenses and apertures are variable. An ion beam processing / observation apparatus characterized by comprising:

  (2) It has a sample stage for holding a sample, an ionization ion source for generating ion beams of at least two kinds of gases, and an irradiation optical system for irradiating the sample held on the sample stage with an ion beam. , Neon, Argon, Krypton, Xenon ion beam processing and observation equipment that can be processed with any ion of helium or hydrogen.

  (3) a first sample stage that holds a sample, an ion source that generates an ion beam of at least two kinds of gases, and an irradiation optical system that irradiates the sample held on the sample stage with the ion beam And a probe for transporting a micro sample extracted from the sample using the first gas species ion beam processing, and a second sample stage on which the sample piece is placed, and by the ion beam of the second gas species Ion beam processing / observation equipment that can observe probes and minute samples.

  (4) A sample stage that holds the sample substantially horizontally, an ion source that can generate at least two kinds of gas ions having different mass numbers, and a sample that is held on the sample stage is irradiated with an ion beam Irradiating a sample with ions having a relatively large mass number to form a cross section substantially perpendicular to the sample surface in a sample cross-sectional observation method using an ion beam processing observation apparatus equipped with an irradiation optical system. A method for observing a cross section of a sample, comprising the steps of inclining a sample stage about a horizontal axis and observing the cross section by irradiating the cross section with gas ions having a relatively small mass number.

  (5) A sample stage that holds a sample substantially horizontally, an ion source that can generate at least two kinds of gas ions having different mass numbers, and a sample that is held on the sample stage is irradiated with an ion beam. In a sample cross-sectional observation method using an ion beam processing and observation apparatus in which the ion beam irradiation system is inclined with respect to the vertical axis, the sample surface is irradiated with ions having a relatively large mass number A sample cross section including a step of forming a cross section substantially perpendicular to the surface, a step of rotating the sample stage about the vertical axis, and irradiating the cross section with gas ions having a relatively small mass number Observation method.

  (6) A sample stage that holds a sample, a field ionization ion source that can generate at least two types of gas ions having different mass numbers, and an ion beam that irradiates the sample held on the sample stage In a sample observation method using an ion beam processing observation apparatus equipped with an irradiation optical system, a step of processing using an ion beam of neon, argon, krypton, or xenon, and an ion of either helium or hydrogen Ion beam processing / observation method including the step of observing with.

  (7) A sample stage for holding a sample, a field ionization ion source capable of generating at least two kinds of gas ions having different mass numbers, and a sample held on the sample stage are irradiated with an ion beam In a sample observation method using an ion beam processing observation apparatus equipped with an irradiation optical system, a step of processing using an ion beam of neon, argon, krypton, or xenon, and an atomic nanopyramid structure at the tip of the ion emitter An ion beam processing / observation method including: a step of observing with one of helium and hydrogen ions; and a step of removing the nanopyramid structure of atoms.

The figure explaining the structure at the time of the process of the ion beam processing and observation apparatus in Example 1 of this invention. The figure explaining the structure of the ion source in Example 1 of this invention. The figure explaining the structure at the time of observation of the ion beam processing and observation apparatus in Example 1 of this invention. The figure explaining the ion beam processing and observation apparatus in Example 2 of this invention. The figure explaining the structure of the ion source in Example 2 of this invention. FIG. 6 is a diagram illustrating a state in which a cross section is observed using stage rotation in Example 2. The figure explaining the flow (a)-(d) which extracts a micro sample from a sample in Example 2. FIG. The figure explaining the flow (e)-(h) which extracts a micro sample from a sample in Example 2. FIG. The figure which shows the example of the hole shape of a stencil mask. The figure explaining the structure of the field ionization type ion source in Example 3 of this invention. The figure explaining the emitter front-end | tip part of the field ionization type ion source in Example 3 of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Duoplasmatron, 2 ... Condenser lens, 3 ... Objective lens, 4 ... Ion beam scanning deflector, 5 ... Stencil mask, 6 ... Ion beam, 7 ... Electron gun, 8 ... Electron beam, 9 ... Electron lens, 10 DESCRIPTION OF SYMBOLS ... Electron beam scanning deflector, 11 ... Sample, 12 ... Secondary particle detector, 13 ... First sample stage, 14 ... First sample stage controller, 15 ... Probe, 16 ... Manipulator, 17 ... Manipulator controller , 18 ... Depo gas source, 19 ... Depo gas source control device, 20 ... Ion beam deflector, 21 ... Ion beam column, 22 ... Electron beam column, 23 ... Vacuum sample chamber, 24 ... Second sample stage, 25 ... Second Sample stage control device, 26 ... Ion source aperture, 27, 28 ... Secondary particle detector control device, 29 ... Sample height measuring device, 30 ... Sample height measurement Control device, 51, 52 ... cylinder valve, 53, 54 ... gas cylinder, 55, 56 ... pressure reducing valve, 57, 58 ... stop valve, 59, 60 ... needle valve, 71 ... cathode, 72 ... intermediate electrode, 73 ... anode, 74 ... Magnet, 75 ... Ion beam, 76 ... Extraction electrode, 91 ... Duoplasmatron control device, 92 ... Lens control device, 93 ... Ion beam scanning deflection control device, 95 ... Calculation processing device, 130 ... Mark, 131 ... No. DESCRIPTION OF SYMBOLS 1 shaping | molding ion beam, 132 ... 1st shaping | molding hole, 133 ... Ion beam, 134 ... Depot film, 135 ... 2nd shaping | molding ion beam, 136 ... 2nd shaping | molding hole, 137 ... Micro sample, 138 ... Deposition film 140 Sample holder.

Claims (8)

In an ion source comprising a vacuum vessel and a gas supply mechanism for introducing gas into the vacuum vessel, and generating gas ions in the vacuum vessel,
The gas supply mechanism includes at least two gas introduction systems including at least a gas cylinder, a gas amount adjusting valve, a stop valve, and a needle valve for adjusting a gas flow rate into the vacuum vessel ,
In each of the gas introduction systems, the gas pressure condition in the vacuum vessel can be set by each of the gas amount adjustment valves,
It is possible to switch the gas type to be introduced into the vacuum vessel by operating the stop valve of each gas introduction system ,
The ion source is an ion source that generates gas ions by gas discharge, has a function of storing at least two gas discharge voltages, and includes a control device capable of switching the gas discharge voltage,
The ion source is characterized in that the gas type is switched by the switching operation of the stop valve and the discharge voltage . The ion source according to claim 1,
The gas supply mechanism includes:
A first gas introduction system in which the vacuum vessel and the first needle valve are connected by a first pipe and a gas ion beam species for processing a sample is introduced;
A second gas introduction system in which the vacuum vessel and the second needle valve are connected by a second pipe and a gas ion beam species for observing the sample is introduced. Ion source. The ion source according to claim 1 ,
An ion source configured to be switchable between a gas ion beam species for processing a sample and a gas ion beam species for observing the sample . The ion source according to claim 1,
The ion source includes a vacuum pump, and a valve provided between the vacuum pump and the vacuum vessel,
When discharging ions from the ion source, the valve provided between the vacuum pump and the vacuum vessel is closed,
The ion source , wherein the valve provided between the vacuum pump and the vacuum vessel is opened when the switching is performed . The ion source according to claim 4.
A calculation processing device for controlling the stop valve, and the valve provided between the vacuum pump and the vacuum vessel ,
An ion source characterized in that the calculation processing device displays a gas type to which the ion source can be switched and a gas switch . The ion source according to claim 1 ,
The ion source is characterized in that the needle valve is fixed in an adjusted state before the switching . The ion source according to claim 1 ,
One of the gas introduction systems supplies any one of argon, xenon, krypton, neon, oxygen, and nitrogen, and the other of the gas introduction systems supplies any one of hydrogen and helium. ion source according to claim give Rukoto to. The ion source according to claim 1,
The ion source includes an ion source, wherein the gas field ion source der Rukoto.

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