[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP4937724B2 - Substrate mounting table, substrate mounting table manufacturing method, substrate processing apparatus, fluid supply mechanism - Google Patents

Substrate mounting table, substrate mounting table manufacturing method, substrate processing apparatus, fluid supply mechanism Download PDF

Info

Publication number
JP4937724B2
JP4937724B2 JP2006337683A JP2006337683A JP4937724B2 JP 4937724 B2 JP4937724 B2 JP 4937724B2 JP 2006337683 A JP2006337683 A JP 2006337683A JP 2006337683 A JP2006337683 A JP 2006337683A JP 4937724 B2 JP4937724 B2 JP 4937724B2
Authority
JP
Japan
Prior art keywords
plate
gas
mounting table
substrate mounting
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006337683A
Other languages
Japanese (ja)
Other versions
JP2008153314A (en
Inventor
雄大 上田
義之 小林
薫 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006337683A priority Critical patent/JP4937724B2/en
Priority to CN2007101544027A priority patent/CN101207061B/en
Priority to KR1020070127552A priority patent/KR100948984B1/en
Priority to US11/954,832 priority patent/US8491752B2/en
Priority to TW096148083A priority patent/TWI427734B/en
Publication of JP2008153314A publication Critical patent/JP2008153314A/en
Application granted granted Critical
Publication of JP4937724B2 publication Critical patent/JP4937724B2/en
Priority to US13/944,948 priority patent/US8869376B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Description

本発明は、基板載置台、基板載置台の製造方法、基板処理装置、流体供給機構に関し、特に半導体基板等のプラズマ処理に好適な基板載置台、基板載置台の製造方法、基板処理装置、流体供給機構に関する。   The present invention relates to a substrate mounting table, a substrate mounting table manufacturing method, a substrate processing apparatus, and a fluid supply mechanism, and more particularly to a substrate mounting table suitable for plasma processing of a semiconductor substrate or the like, a substrate mounting table manufacturing method, a substrate processing apparatus, and a fluid It relates to a supply mechanism.

従来から、例えば半導体基板等にプラズマエッチング等のプラズマ処理を施す基板処理装置等においては、基板を載置する基板載置台に、ヘリウムガス等の冷却ガスを基板裏面側に供給するための流体供給機構を具備したものが知られている。又、上記のような基板載置台においては、静電チャックを構成する絶縁層等として、基板載置面にＡｌ2Ｏ3等のセラミック溶射層を設けることが知られている（例えば、特許文献１参照。）。
特開２００４−４７６５３号公報 2. Description of the Related Art Conventionally, in a substrate processing apparatus that performs plasma processing such as plasma etching on a semiconductor substrate, for example, a fluid supply for supplying a cooling gas such as helium gas to the substrate back surface on the substrate mounting table on which the substrate is mounted. Those equipped with a mechanism are known. Further, in the substrate mounting table as described above, it is known that a ceramic sprayed layer such as Al 2 O 3 is provided on the substrate mounting surface as an insulating layer or the like constituting the electrostatic chuck (for example, Patent Documents). 1).
JP 2004-47653 A

上記のような基板載置台を製造する方法としては、例えば、複数のガス供給孔を形成した第１の板状部材と、これらのガス供給孔にガスを供給するためのガス供給路となる溝が表面に形成された第２の板状部材とを別体に構成し、これらをろう付け等によって溶接接合して一体化し、この後、載置面にセラミックを溶射することによってセラミック溶射層を形成する方法が考えられる。   As a method for manufacturing the substrate mounting table as described above, for example, a first plate member having a plurality of gas supply holes, and a groove serving as a gas supply path for supplying gas to these gas supply holes Is formed separately from the second plate-like member formed on the surface, and these are welded and integrated by brazing or the like, and then the ceramic sprayed layer is formed by thermally spraying the ceramic on the mounting surface. A method of forming is conceivable.

上記の方法では、セラミック溶射の際に、ガス供給孔内に溶射セラミックが侵入する。このため、ガス供給孔から空気等を噴出させつつ、セラミック溶射を行い、ガス供給孔内に溶射セラミックが侵入し難いようにさせる。しかし、このような空気等の噴出では、ガス供給孔の内部に溶射セラミックが侵入することを完全に防止することはできない。このため、ガス供給孔の内部に侵入してその底部に付着した溶射セラミックを、洗浄して洗い流す工程を行う必要がある。   In the above method, the sprayed ceramic enters the gas supply hole during the ceramic spraying. For this reason, ceramic spraying is performed while air or the like is ejected from the gas supply hole so that the sprayed ceramic is less likely to enter the gas supply hole. However, such ejection of air or the like cannot completely prevent the sprayed ceramic from entering the gas supply hole. For this reason, it is necessary to perform a process of washing and washing away the sprayed ceramic that has entered the inside of the gas supply hole and adhered to the bottom thereof.

しかし、本発明者等が精査したところ、ガス供給孔の底部等に強固に付着した溶射セラミック等は、洗浄で完全に除去することが困難となる場合があり、溶射セラミックが溶射残渣として残る場合がある。そして、製品として使用している最中にこの溶射残渣が剥がれて半導体ウエハや処理チャンバー内を汚染したり、ガス供給孔の孔詰まりを発生させて冷却ガスの圧力低下による温度制御上の不具合の発生を招くことがあるという問題があった。   However, when the present inventors have scrutinized, it is difficult to completely remove the sprayed ceramic that adheres firmly to the bottom of the gas supply hole, etc., and the sprayed ceramic remains as a sprayed residue. There is. In addition, the thermal spray residue peels off during use as a product, contaminates the semiconductor wafer and the processing chamber, or clogs the gas supply holes, causing problems in temperature control due to the pressure drop of the cooling gas. There was a problem that it might be caused.

本発明は、上記従来の事情に対処してなされたもので、流体流路内に溶射残渣が残ることを防止することができ、溶射残渣による汚染の発生や、流体流路の孔詰まりの発生を防止することのできる基板載置台、基板載置台の製造方法、基板処理装置、流体供給機構を提供することを目的とする。   The present invention has been made in response to the above-described conventional circumstances, and can prevent the spray residue from remaining in the fluid flow path, causing contamination due to the spray residue and occurrence of clogging of the fluid flow path. It is an object to provide a substrate mounting table, a substrate mounting table manufacturing method, a substrate processing apparatus, and a fluid supply mechanism.

請求項１の基板載置台は、基板が載置される載置面と、前記載置面に開口し当該載置面と前記基板との間にガスを供給する複数のガス吐出孔と、前記ガス吐出孔へガスを供給するためのガス供給路とを有する板状部材を具備し、前記載置面を覆うセラミック溶射層が設けられた基板載置台であって、少なくとも前記ガス吐出孔と対向する部位の前記ガス供給路の内壁が、当該ガス供給路の幅方向に沿った縦断面形状が下部に向けて凸形状となるＲ面となるように、曲面状に形成されていることを特徴とする。 The substrate mounting table according to claim 1 includes a mounting surface on which the substrate is mounted, a plurality of gas discharge holes that open to the mounting surface and supply gas between the mounting surface and the substrate, A substrate mounting table having a plate-like member having a gas supply path for supplying gas to the gas discharge hole, and provided with a ceramic sprayed layer covering the mounting surface, facing at least the gas discharge hole The inner wall of the gas supply path of the portion to be formed is formed in a curved surface shape so that the longitudinal cross-sectional shape along the width direction of the gas supply path becomes an R surface convex toward the lower part. And

請求項２の基板載置台は、請求項１記載の基板載置台であって、前記ガス供給路は、複数の前記ガス吐出孔により共有されていることを特徴とする。   The substrate mounting table of claim 2 is the substrate mounting table of claim 1, wherein the gas supply path is shared by the plurality of gas discharge holes.

請求項３の基板載置台は、請求項２記載の基板載置台であって、前記板状部材は、前記ガス吐出孔を有する第１の板状部材と、底部が曲面状とされた溝を有する第２の板状部材とを接合して構成されていることを特徴とする。   The substrate mounting table according to claim 3 is the substrate mounting table according to claim 2, wherein the plate-shaped member includes a first plate-shaped member having the gas discharge holes and a groove having a curved bottom portion. It is characterized by being formed by joining a second plate-like member having it.

請求項４の基板載置台は、請求項３記載の基板載置台であって、前記第２の板状部材に、前記ガス供給路内にガスを供給するためのガス供給穴と、前記ガス供給路内を洗浄するための流体を供給又は排出するための洗浄用穴が設けられていることを特徴とする。   The substrate mounting table according to claim 4 is the substrate mounting table according to claim 3, wherein a gas supply hole for supplying gas into the gas supply path to the second plate member, and the gas supply A cleaning hole for supplying or discharging a fluid for cleaning the inside of the passage is provided.

請求項５の基板載置台は、請求項１〜４いずれか１項記載の基板載置台であって、前記板状部材がアルミニウムからなり、前記ガス供給路内に陽極酸化皮膜が形成されていることを特徴とする。   The substrate mounting table according to claim 5 is the substrate mounting table according to any one of claims 1 to 4, wherein the plate-like member is made of aluminum, and an anodized film is formed in the gas supply path. It is characterized by that.

請求項６の基板載置台の製造方法は、基板が載置される載置面と、前記載置面に開口し当該載置面と前記基板との間にガスを供給する複数のガス吐出孔と、前記ガス吐出孔へガスを供給するためのガス供給路とを有する板状部材を具備し、前記載置面を覆うセラミック溶射層が設けられた基板載置台の製造方法であって、少なくとも前記ガス吐出孔と対向する部位の前記ガス供給路の内壁を曲面状とした前記板状部材を形成する工程と、前記ガス吐出孔からガスを吐出させながら、前記板状部材の前記載置面にセラミック溶射層を形成する工程と、前記ガス供給路の内部を洗浄する工程とを具備したことを特徴とする。   The method for manufacturing a substrate mounting table according to claim 6 includes: a mounting surface on which the substrate is mounted; and a plurality of gas discharge holes that open to the mounting surface and supply gas between the mounting surface and the substrate. And a plate-like member having a gas supply path for supplying gas to the gas discharge hole, and a method for manufacturing a substrate mounting table provided with a ceramic sprayed layer covering the mounting surface, A step of forming the plate-like member having a curved inner wall of the gas supply path at a portion facing the gas discharge hole, and the placement surface of the plate-like member while discharging gas from the gas discharge hole And a step of forming a ceramic sprayed layer, and a step of cleaning the inside of the gas supply path.

請求項７の基板載置台の製造方法は、請求項６記載の基板載置台の製造方法であって、前記ガス供給路は、複数の前記ガス吐出孔により共有されていることを特徴とする。   A manufacturing method of a substrate mounting table according to claim 7 is the manufacturing method of a substrate mounting table according to claim 6, wherein the gas supply path is shared by the plurality of gas discharge holes.

請求項８の基板載置台の製造方法は、請求項７記載の基板載置台の製造方法であって、前記板状部材は、前記ガス吐出孔を有する第１の板状部材と、底部が曲面状とされた溝を有する第２の板状部材とを接合して形成することを特徴とする。   The manufacturing method of the substrate mounting table according to claim 8 is the manufacturing method of the substrate mounting table according to claim 7, wherein the plate-like member includes a first plate-like member having the gas discharge holes and a bottom portion having a curved surface. It is characterized by being formed by joining a second plate-like member having a groove.

請求項９の基板載置台の製造方法は、請求項８記載の基板載置台の製造方法であって、前記第２の板状部材に設けられたガス供給穴と、前記第２の板状部材に設けられた洗浄用穴とを用いて、前記ガス供給路の内部に洗浄用流体を供給及び排出して洗浄を行うことを特徴とする。   The method for manufacturing the substrate mounting table according to claim 9 is the method for manufacturing the substrate mounting table according to claim 8, wherein the gas supply hole provided in the second plate member and the second plate member are provided. Cleaning is performed by supplying and discharging a cleaning fluid into the gas supply path using a cleaning hole provided in the gas supply path.

請求項１０の基板載置台の製造方法は、請求項６〜９いずれか１項記載の基板載置台の製造方法であって、前記板状部材がアルミニウムからなり、セラミック溶射層を形成する工程の前に前記ガス供給路内に陽極酸化皮膜を形成する工程を具備したことを特徴とする。   The method for manufacturing a substrate mounting table according to claim 10 is the method for manufacturing a substrate mounting table according to any one of claims 6 to 9, wherein the plate-like member is made of aluminum and forms a ceramic sprayed layer. A step of forming an anodic oxide film in the gas supply path is provided.

請求項１１の基板処理装置は、基板を収容して処理する処理チャンバーを具備した基板処理装置であって、前記処理チャンバー内に、請求項１〜５いずれか１項記載の基板載置台が配設されていることを特徴とする。   The substrate processing apparatus according to claim 11 is a substrate processing apparatus including a processing chamber for accommodating and processing a substrate, wherein the substrate mounting table according to any one of claims 1 to 5 is arranged in the processing chamber. It is provided.

請求項１２の流体供給機構は、複数の流体吐出孔を具備した第１の板状部材と、複数の前記流体吐出孔に共有され当該流体吐出孔に流体を供給するための流体供給路を形成する溝を具備した第２の板状部材とを、前記第１の板状部材の下側に前記第２の板状部材が位置するように接合して構成された板状部材を有し、前記第１の板状部材の表面にセラミック溶射膜層が形成された流体供給機構であって、少なくとも前記流体吐出孔と対向する部位の前記流体供給路を形成する前記溝の底部が、当該溝の幅方向に沿った縦断面形状が下部に向けて凸形状となるＲ面となるように、曲面状に形成されていることを特徴とする。 The fluid supply mechanism according to claim 12 forms a first plate-like member having a plurality of fluid discharge holes and a fluid supply path that is shared by the plurality of fluid discharge holes and supplies fluid to the fluid discharge holes. A plate-like member constituted by joining a second plate-like member provided with a groove to be positioned so that the second plate-like member is positioned below the first plate-like member, A fluid supply mechanism in which a ceramic sprayed coating layer is formed on the surface of the first plate member, wherein at least a bottom portion of the groove forming the fluid supply path in a portion facing the fluid discharge hole is the groove. It is characterized by being formed in a curved surface shape so that the longitudinal cross-sectional shape along the width direction becomes an R surface convex toward the lower part.

本発明によれば、流体流路内に溶射残渣が残ることを防止することができ、溶射残渣による汚染の発生や、流体流路の孔詰まりの発生を防止することのできる基板載置台、基板載置台の製造方法、基板処理装置、流体供給機構を提供することができる。   According to the present invention, it is possible to prevent a thermal spray residue from remaining in the fluid flow path, and to prevent the occurrence of contamination due to the thermal spray residue and the occurrence of clogging of the fluid flow path. A mounting table manufacturing method, a substrate processing apparatus, and a fluid supply mechanism can be provided.

以下、本発明の実施の形態について図面を参照して説明する。図１は、本実施形態に係る基板処理装置としてのプラズマエッチング装置の断面構成を示すものである。まず、図１を参照してプラズマエッチング装置の構成について説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a cross-sectional configuration of a plasma etching apparatus as a substrate processing apparatus according to the present embodiment. First, the configuration of the plasma etching apparatus will be described with reference to FIG.

プラズマエッチング装置１は、電極板が上下平行に対向し、プラズマ形成用電源が接続された容量結合型平行平板エッチング装置として構成されている。   The plasma etching apparatus 1 is configured as a capacitively coupled parallel plate etching apparatus in which electrode plates are opposed in parallel in the vertical direction and a power source for plasma formation is connected.

プラズマエッチング装置１は、例えば表面が陽極酸化処理されたアルミニウム等からなり円筒形状に成形された処理チャンバー（処理容器）２を有しており、この処理チャンバー２は接地されている。処理チャンバー２内の底部にはセラミックなどの絶縁板３を介して、被処理物、例えば半導体ウエハＷを載置するための略円柱状のサセプタ支持台４が設けられている。さらに、このサセプタ支持台４の上には、下部電極を構成する基板載置台（サセプタ）５が設けられており、基板載置台５には、ハイパスフィルター（ＨＰＦ）６が接続されている。この基板載置台５の詳細な構成については、後述する。   The plasma etching apparatus 1 has a processing chamber (processing container) 2 formed of, for example, aluminum whose surface is anodized and formed into a cylindrical shape, and the processing chamber 2 is grounded. A substantially cylindrical susceptor support 4 for placing an object to be processed, for example, a semiconductor wafer W, is provided at the bottom of the processing chamber 2 via an insulating plate 3 such as ceramic. Further, a substrate mounting table (susceptor) 5 constituting a lower electrode is provided on the susceptor support 4, and a high pass filter (HPF) 6 is connected to the substrate mounting table 5. The detailed configuration of the substrate mounting table 5 will be described later.

サセプタ支持台４の内部には、冷媒室７が設けられており、この冷媒室７には、冷媒が冷媒導入管８を介して導入されて循環し、その冷熱が基板載置台５を介して半導体ウエハＷに対して伝熱され、これにより半導体ウエハＷが所望の温度に制御される。   A refrigerant chamber 7 is provided inside the susceptor support 4, and refrigerant is introduced into the refrigerant chamber 7 through a refrigerant introduction pipe 8 and circulated, and the cold heat is transmitted through the substrate mounting table 5. Heat is transferred to the semiconductor wafer W, whereby the semiconductor wafer W is controlled to a desired temperature.

基板載置台５は、その上側中央部が凸状の円板状に成形され、その上に半導体ウエハＷと略同形の静電チャック１１が設けられている。静電チャック１１は、絶縁材（セラミック溶射膜からなる）１０の間に電極１２を配置して構成されている。そして、電極１２に接続された直流電源１３から例えば１．５ｋＶの直流電圧が印加されることにより、例えばクーロン力によって半導体ウエハＷを静電吸着する。   The substrate mounting table 5 has an upper central portion formed into a convex disk shape, and an electrostatic chuck 11 having substantially the same shape as the semiconductor wafer W is provided thereon. The electrostatic chuck 11 is configured by disposing an electrode 12 between insulating materials (made of a ceramic sprayed film) 10. Then, when a DC voltage of, for example, 1.5 kV is applied from the DC power source 13 connected to the electrode 12, the semiconductor wafer W is electrostatically attracted by, for example, Coulomb force.

絶縁板３、サセプタ支持台４、基板載置台５、静電チャック１１には、半導体ウエハＷの裏面に、伝熱媒体（例えばＨｅガス等）を供給するためのガス通路１４が形成されており、この伝熱媒体を介して基板載置台５の冷熱が半導体ウエハＷに伝達され半導体ウエハＷが所定の温度に維持されるようになっている。   In the insulating plate 3, the susceptor support 4, the substrate mounting table 5, and the electrostatic chuck 11, a gas passage 14 for supplying a heat transfer medium (for example, He gas) is formed on the back surface of the semiconductor wafer W. The cold heat of the substrate mounting table 5 is transmitted to the semiconductor wafer W through the heat transfer medium, so that the semiconductor wafer W is maintained at a predetermined temperature.

基板載置台５の上端周縁部には、静電チャック１１上に載置された半導体ウエハＷを囲むように、環状のフォーカスリング１５が配置されている。このフォーカスリング１５は、例えば、シリコンなどの導電性材料から構成されており、エッチングの均一性を向上させる作用を有する。   An annular focus ring 15 is arranged at the upper peripheral edge of the substrate platform 5 so as to surround the semiconductor wafer W placed on the electrostatic chuck 11. The focus ring 15 is made of, for example, a conductive material such as silicon, and has an effect of improving etching uniformity.

基板載置台５の上方には、この基板載置台５と平行に対向して上部電極２１が設けられている。この上部電極２１は、絶縁材２２を介して、処理チャンバー２の上部に支持されている。上部電極２１は、電極板２４と、この電極板２４を支持する導電性材料からなる電極支持体２５とによって構成されている。電極板２４は、基板載置台５との対向面を構成し、多数の吐出孔２３を有する。この電極板２４は、例えば、シリコンから構成されるか、又は表面に陽極酸化処理（アルマイト処理）されたアルミニウムに石英カバーを設けて構成されている。基板載置台５と上部電極２１とは、その間隔を変更可能とされている。   An upper electrode 21 is provided above the substrate mounting table 5 so as to face the substrate mounting table 5 in parallel. The upper electrode 21 is supported on the upper portion of the processing chamber 2 via an insulating material 22. The upper electrode 21 includes an electrode plate 24 and an electrode support 25 made of a conductive material that supports the electrode plate 24. The electrode plate 24 constitutes a surface facing the substrate mounting table 5 and has a large number of ejection holes 23. The electrode plate 24 is made of, for example, silicon, or is formed by providing a quartz cover on aluminum whose surface is anodized (anodized). The distance between the substrate mounting table 5 and the upper electrode 21 can be changed.

上部電極２１における電極支持体２５の中央にはガス導入口２６が設けられ、このガス導入口２６には、ガス供給管２７が接続されている。さらにこのガス供給管２７には、バルブ２８、並びにマスフローコントローラ２９を介して、処理ガスとしてのエッチングガスを供給するための処理ガス供給源３０が接続されている。   A gas inlet 26 is provided in the center of the electrode support 25 in the upper electrode 21, and a gas supply pipe 27 is connected to the gas inlet 26. Further, a processing gas supply source 30 for supplying an etching gas as a processing gas is connected to the gas supply pipe 27 via a valve 28 and a mass flow controller 29.

処理チャンバー２の底部には排気管３１が接続されており、この排気管３１には排気装置３５が接続されている。排気装置３５はターボ分子ポンプなどの真空ポンプを備えており、処理チャンバー２内を所定の減圧雰囲気、例えば１Ｐａ以下の所定の圧力まで真空引き可能なように構成されている。また、処理チャンバー２の側壁にはゲートバルブ３２が設けられており、このゲートバルブ３２を開にした状態で半導体ウエハＷが隣接するロードロック室（図示せず）との間で搬送されるようになっている。   An exhaust pipe 31 is connected to the bottom of the processing chamber 2, and an exhaust device 35 is connected to the exhaust pipe 31. The exhaust device 35 includes a vacuum pump such as a turbo molecular pump, and is configured to be able to evacuate the processing chamber 2 to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 1 Pa or less. Further, a gate valve 32 is provided on the side wall of the processing chamber 2 so that the semiconductor wafer W is transferred to and from an adjacent load lock chamber (not shown) with the gate valve 32 opened. It has become.

上部電極２１には、第１の高周波電源４０が接続されており、その給電線には整合器４１が介挿されている。また、上部電極２１にはローパスフィルター（ＬＰＦ）４２が接続されている。この第１の高周波電源４０は、５０〜１５０ＭＨｚの範囲の周波数を有している。このように高い周波数を印加することにより処理チャンバー２内に好ましい解離状態でかつ高密度のプラズマを形成することができる。   A first high frequency power supply 40 is connected to the upper electrode 21, and a matching device 41 is inserted in the feeder line. Further, a low pass filter (LPF) 42 is connected to the upper electrode 21. The first high frequency power supply 40 has a frequency in the range of 50 to 150 MHz. By applying such a high frequency, it is possible to form a high-density plasma in a preferable dissociated state in the processing chamber 2.

下部電極としての基板載置台５には、第２の高周波電源５０が接続されており、その給電線には整合器５１が介挿されている。この第２の高周波電源５０は、第１の高周波電源４０より低い周波数の範囲を有しており、このような範囲の周波数を印加することにより、被処理体である半導体ウエハＷに対してダメージを与えることなく適切なイオン作用を与えることができる。第２の高周波電源５０の周波数は１〜２０ＭＨｚの範囲が好ましい。   A second high frequency power supply 50 is connected to the substrate mounting table 5 as a lower electrode, and a matching unit 51 is inserted in the power supply line. The second high-frequency power supply 50 has a lower frequency range than the first high-frequency power supply 40. By applying a frequency in such a range, the semiconductor wafer W that is the object to be processed is damaged. Appropriate ion action can be given without giving. The frequency of the second high frequency power supply 50 is preferably in the range of 1 to 20 MHz.

上記構成のプラズマエッチング装置１は、制御部６０によって、その動作が統括的に制御される。この制御部６０には、ＣＰＵを備えプラズマエッチング装置１の各部を制御するプロセスコントローラ６１と、ユーザインタフェース部６２と、記憶部６３とが設けられている。   The operation of the plasma etching apparatus 1 having the above configuration is controlled by the control unit 60. The control unit 60 includes a process controller 61 that includes a CPU and controls each unit of the plasma etching apparatus 1, a user interface unit 62, and a storage unit 63.

ユーザインタフェース部６２は、工程管理者がプラズマエッチング装置１を管理するためにコマンドの入力操作を行うキーボードや、プラズマエッチング装置１の稼働状況を可視化して表示するディスプレイ等から構成されている。   The user interface unit 62 includes a keyboard that allows a process manager to input commands in order to manage the plasma etching apparatus 1, a display that visualizes and displays the operating status of the plasma etching apparatus 1, and the like.

記憶部６３には、プラズマエッチング装置１で実行される各種処理をプロセスコントローラ６１の制御にて実現するための制御プログラム（ソフトウエア）や処理条件データ等が記憶されたレシピが格納されている。そして、必要に応じて、ユーザインタフェース部６２からの指示等にて任意のレシピを記憶部６３から呼び出してプロセスコントローラ６１に実行させることで、プロセスコントローラ６１の制御下で、プラズマエッチング装置１での所望の処理が行われる。また、制御プログラムや処理条件データ等のレシピは、コンピュータで読取り可能なコンピュータ記憶媒体（例えば、ハードディスク、ＣＤ、フレキシブルディスク、半導体メモリ等）などに格納された状態のものを利用したり、或いは、他の装置から、例えば専用回線を介して随時伝送させてオンラインで利用したりすることも可能である。   The storage unit 63 stores a recipe in which a control program (software) for realizing various processes executed by the plasma etching apparatus 1 under the control of the process controller 61 and processing condition data are stored. Then, if necessary, an arbitrary recipe is called from the storage unit 63 by an instruction from the user interface unit 62 and is executed by the process controller 61, so that the process in the plasma etching apparatus 1 is performed under the control of the process controller 61. Desired processing is performed. In addition, recipes such as control programs and processing condition data may be stored in a computer-readable computer storage medium (eg, hard disk, CD, flexible disk, semiconductor memory, etc.), or It is also possible to transmit the data from other devices as needed via a dedicated line and use it online.

上記構成のプラズマエッチング装置１によって、半導体ウエハＷをプラズマエッチングする場合、まず、半導体ウエハＷは、ゲートバルブ３２が開放された後、図示しないロードロック室から処理チャンバー２内へと搬入され、静電チャック１１上に載置される。そして、直流電源１３から直流電圧が印加されることによって、半導体ウエハＷが静電チャック１１上に静電吸着される。次いで、ゲートバルブ３２が閉じられ、排気装置３５によって、処理チャンバー２内が所定の真空度まで真空引きされる。   When the semiconductor wafer W is subjected to plasma etching by the plasma etching apparatus 1 having the above-described configuration, first, after the gate valve 32 is opened, the semiconductor wafer W is carried into the processing chamber 2 from a load lock chamber (not shown) and statically. It is placed on the electric chuck 11. The semiconductor wafer W is electrostatically attracted onto the electrostatic chuck 11 by applying a DC voltage from the DC power source 13. Next, the gate valve 32 is closed, and the processing chamber 2 is evacuated to a predetermined degree of vacuum by the exhaust device 35.

その後、バルブ２８が開放されて、処理ガス供給源３０から所定の処理ガス（エッチングガス）が、マスフローコントローラ２９によってその流量を調整されつつ、ガス供給管２７、ガス導入口２６を通って上部電極２１の中空部へと導入され、さらに電極板２４の吐出孔２３を通って、図１の矢印に示すように、半導体ウエハＷに対して均一に吐出される。   Thereafter, the valve 28 is opened, and a predetermined processing gas (etching gas) from the processing gas supply source 30 is adjusted in flow rate by the mass flow controller 29, and passes through the gas supply pipe 27 and the gas introduction port 26, and the upper electrode. 21 is introduced into the hollow portion 21 and further discharged through the discharge holes 23 of the electrode plate 24 and uniformly discharged onto the semiconductor wafer W as indicated by the arrows in FIG.

そして、処理チャンバー２内の圧力が、所定の圧力に維持される。その後、第１の高周波電源４０から所定の周波数の高周波電力が上部電極２１に印加される。これにより、上部電極２１と下部電極としての基板載置台５との間に高周波電界が生じ、処理ガスが解離してプラズマ化する。   Then, the pressure in the processing chamber 2 is maintained at a predetermined pressure. Thereafter, high frequency power having a predetermined frequency is applied to the upper electrode 21 from the first high frequency power supply 40. As a result, a high frequency electric field is generated between the upper electrode 21 and the substrate mounting table 5 as the lower electrode, and the processing gas is dissociated into plasma.

他方、第２の高周波電源５０から、上記の第１の高周波電源４０より低い周波数の高周波電力が下部電極である基板載置台５に印加される。これにより、プラズマ中のイオンが基板載置台５側へ引き込まれ、イオンアシストによりエッチングの異方性が高められる。   On the other hand, high frequency power having a frequency lower than that of the first high frequency power supply 40 is applied from the second high frequency power supply 50 to the substrate mounting table 5 serving as a lower electrode. As a result, ions in the plasma are attracted to the substrate mounting table 5 side, and the anisotropy of etching is enhanced by ion assist.

そして、プラズマエッチングが終了すると、高周波電力の供給及び処理ガスの供給が停止され、上記した手順とは逆の手順で、半導体ウエハＷが処理チャンバー２内から搬出される。   When the plasma etching is completed, the supply of the high frequency power and the supply of the processing gas are stopped, and the semiconductor wafer W is unloaded from the processing chamber 2 by a procedure reverse to the above procedure.

次に、図２〜４を参照して、本実施形態に係る基板載置台（サセプタ）５について説明する。図２〜４に示すように、基板載置台５は、円板状に形成された第１の板状部材５１０と、円板状に形成された第２の板状部材５２０とを接合して構成され、全体として円板状に形成されている。本実施形態では、これらの第１の板状部材５１０及び第２の板状部材５２０は、アルミニウムから構成されている。   Next, a substrate mounting table (susceptor) 5 according to this embodiment will be described with reference to FIGS. As shown in FIGS. 2 to 4, the substrate mounting table 5 is formed by joining a first plate-like member 510 formed in a disc shape and a second plate-like member 520 formed in a disc shape. It is comprised and is formed in disk shape as a whole. In the present embodiment, the first plate-like member 510 and the second plate-like member 520 are made of aluminum.

第１の板状部材５１０には、図２，３に示すように、多数のガス吐出孔５１１が設けられている。また、第２の板状部材５２０には、図２，４に示すように、上記の各ガス吐出孔５１１にガスを供給するガス供給路を形成するための溝５２１が同心円状に形成されている。この溝５２１のうち、最外周部に設けられた溝５２１は、第１の板状部材５１０最外周部に設けられた複数のガス吐出孔５１１によって共有されるようになっている。また、最外周部以外に設けられた複数の同心円状及びこれらを接続する径方向の溝５２１は、第１の板状部材５１０最外周部以外に設けられた複数のガス吐出孔５１１によって共有されるようになっている。これによって、冷却ガスのガス圧を、最外周部（エッヂ部）とその他の部位とで変更することができるようになっている。   As shown in FIGS. 2 and 3, the first plate-like member 510 is provided with a large number of gas discharge holes 511. Further, as shown in FIGS. 2 and 4, grooves 521 for forming gas supply passages for supplying gas to the respective gas discharge holes 511 are formed concentrically on the second plate-like member 520. Yes. Of the grooves 521, the groove 521 provided in the outermost peripheral portion is shared by a plurality of gas discharge holes 511 provided in the outermost peripheral portion of the first plate-like member 510. Further, the plurality of concentric circles provided outside the outermost peripheral part and the radial groove 521 connecting them are shared by the plurality of gas discharge holes 511 provided outside the outermost peripheral part of the first plate-like member 510. It has become so. As a result, the gas pressure of the cooling gas can be changed between the outermost peripheral portion (edge portion) and other portions.

また、図３に示すように、第１の板状部材５１０には、半導体ウエハＷの載置時に半導体ウエハＷを昇降させるためのピンが夫々配置される３つのピン穴５１２が設けられており、図４に示すように、これらのピン穴５１２に対応する位置に第２の板状部材５２０にもピン穴５２２が設けられている。また、図４に示すように、第２の板状部材５２０には、最外周及びその他の溝５２１に夫々冷却ガスを供給するための２つのガス供給穴５２３、及び、最外周及びその他の溝５２１の洗浄時に使用するための複数（図４に示す例では合計８つ）の洗浄用穴５２４が設けられている。なお、これらの洗浄用穴５２４は、後述する洗浄工程等の製造工程で使用されるものであり、基板載置台５の使用時には、閉塞部材によって閉塞される。   As shown in FIG. 3, the first plate member 510 is provided with three pin holes 512 in which pins for raising and lowering the semiconductor wafer W are placed when the semiconductor wafer W is placed. As shown in FIG. 4, pin holes 522 are also provided in the second plate-like member 520 at positions corresponding to these pin holes 512. As shown in FIG. 4, the second plate-like member 520 has two gas supply holes 523 for supplying cooling gas to the outermost periphery and other grooves 521, and the outermost periphery and other grooves, respectively. A plurality of cleaning holes 524 (a total of eight in the example shown in FIG. 4) are provided for use in cleaning 521. These cleaning holes 524 are used in manufacturing processes such as a cleaning process described later, and are closed by a closing member when the substrate mounting table 5 is used.

図２に示されるガス吐出孔５１１の径は、例えば１ｍｍ程度とされている。一方、図２に示される溝５２１の幅は例えば３ｍｍ程度、深さは例えば２ｍｍ程度とされている。また、溝５２１の底部５２１ａは曲面状とされており、本実施形態では、その断面形状が下部に向けて凸形状となる半径が１．５ｍｍのＲ面とされている。このように、溝５２１の底部５２１ａの形状を曲面状とするのは、ここに溶射セラミックが強固に付着し難くするためのものである。したがって、溝５２１のうち、少なくともガス吐出孔５１１と対向する部位（ガス吐出孔５１１の底部）のみが曲面状とされていれば良いが、溝５２１全体の切削工程を同一の工程で行えるように、本実施形態では、溝５２１全体に亘りその底部５２１ａを曲面状としている。これらの溝５２１等からガス吐出孔５１１へ冷却ガスをガス供給路が構成されており、溝５２１内等のガス供給路の内壁は、陽極酸化皮膜（アルマイト皮膜）（図示せず。）によって覆われている。   The diameter of the gas discharge hole 511 shown in FIG. 2 is about 1 mm, for example. On the other hand, the width of the groove 521 shown in FIG. 2 is about 3 mm and the depth is about 2 mm, for example. Further, the bottom 521a of the groove 521 has a curved surface, and in this embodiment, the radius of the radius of 1.5 mm that makes the cross-sectional shape convex toward the bottom is 1.5 mm. Thus, the reason why the shape of the bottom portion 521a of the groove 521 is a curved surface is to make it difficult for the sprayed ceramic to adhere firmly thereto. Therefore, it is only necessary that at least a portion of the groove 521 facing the gas discharge hole 511 (the bottom of the gas discharge hole 511) has a curved shape, but the cutting process of the entire groove 521 can be performed in the same process. In this embodiment, the bottom portion 521a is curved over the entire groove 521. A gas supply path for cooling gas is formed from these grooves 521 and the like to the gas discharge holes 511, and the inner wall of the gas supply path such as in the grooves 521 is covered with an anodized film (alumite film) (not shown). It has been broken.

また、第１の板状部材５１０の上側の載置面には、静電チャック１１が設けられている。この静電チャック１１は、Ａｌ2Ｏ3等のセラミック溶射膜からなる絶縁材１０の間に、金属（本実施形態では、タングステンの金属溶射膜）からなる電極１２を配置して構成されている。 An electrostatic chuck 11 is provided on the upper mounting surface of the first plate-like member 510. The electrostatic chuck 11 is configured by disposing an electrode 12 made of metal (in this embodiment, a tungsten metal spray film) between insulating materials 10 made of a ceramic spray film such as Al 2 O 3 . .

次に、上記基板載置台５の製造方法について説明する。まず、アルミニウム製の円板に多数のガス吐出孔５１１を形成して第１の板状部材５１０を形成するとともに、アルミニウム製の円板に、ガス吐出孔５１１へのガス供給路となる溝５２１を形成した第２の板状部材５２０を形成する。なお、第１の板状部材５１０には、前記したピン穴５１２、第２の板状部材５２０には、前記したピン穴５２２、ガス供給穴５２３、及び、洗浄用穴５２４等も形成する   Next, a method for manufacturing the substrate mounting table 5 will be described. First, a number of gas discharge holes 511 are formed in an aluminum disk to form the first plate-like member 510, and a groove 521 serving as a gas supply path to the gas discharge holes 511 is formed in the aluminum disk. The 2nd plate-shaped member 520 which formed is formed. The first plate member 510 is also formed with the pin hole 512 described above, and the second plate member 520 is formed with the pin hole 522, gas supply hole 523, cleaning hole 524, and the like.

次に、上記第１の板状部材５１０と、第２の板状部材５２０とを、ろう付け等によって溶接接合する。このろう付け工程では、接合面の近傍の部材表面が荒れる傾向があるが、このように部材表面が荒れた状態となると、後述するセラミック溶射工程において、表面が荒れた部分に溶射セラミックが強固に付着してしまう場合がある。このため、例えば、図５に示すように、溝６２１の底部６２１ａにおいて、第１の板状部材６１０と、第２の板状部材６２０とを溶接接合すると、溝６２１の底部６２１ａが荒れた状態ととなり、塊状の溶射セラミック６３０が強固に付着する可能性が高くなる。そこで、本実施形態では、図２に示すように、溝５２１の底部ではなく溝５２１の上部において、第１の板状部材５１０と、第２の板状部材５２０とを、ろう付けする構造となっている。このような構造を採用することによって、塊状の溶射セラミック５３０が付着し易い溝５２１の底部５２１ａが荒れた状態となることを抑制することができる。   Next, the first plate member 510 and the second plate member 520 are welded together by brazing or the like. In this brazing process, the surface of the member in the vicinity of the joint surface tends to be rough, but when the surface of the member becomes rough in this way, in the ceramic spraying process to be described later, the sprayed ceramic is firmly formed in the roughened surface. It may adhere. For this reason, for example, as shown in FIG. 5, when the first plate-like member 610 and the second plate-like member 620 are welded to each other at the bottom 621a of the groove 621, the bottom 621a of the groove 621 is rough. Thus, there is a high possibility that the massive sprayed ceramic 630 adheres firmly. Therefore, in the present embodiment, as shown in FIG. 2, the first plate member 510 and the second plate member 520 are brazed at the top of the groove 521 instead of the bottom of the groove 521. It has become. By adopting such a structure, it is possible to prevent the bottom portion 521a of the groove 521 to which the massive sprayed ceramic 530 easily adheres from being in a rough state.

次に、ガス吐出孔５１１の内側面及び溝５２１の内側面等のガス供給路となる部分に陽極酸化処理（アルマイト処理）により、陽極酸化皮膜（アルマイト皮膜）を形成する。この陽極酸化皮膜は、溶射セラミックが強固に付着し難くする効果を有する。このような陽極酸化皮膜の形成においても、上記したとおり、溝５２１の底部５２１ａが荒れた状態となっていないので、表面が滑らかな良好な陽極酸化皮膜を形成することができる。そして、このような表面が滑らかな良好な陽極酸化皮膜が、溶射セラミックが強固に付着し難くする効果を増大させる。   Next, an anodic oxidation film (alumite film) is formed by anodizing treatment (alumite treatment) on a portion serving as a gas supply path such as the inner side surface of the gas discharge hole 511 and the inner side surface of the groove 521. This anodized film has the effect of making it difficult for the sprayed ceramic to adhere firmly. Also in the formation of such an anodic oxide film, as described above, the bottom 521a of the groove 521 is not in a rough state, so that a good anodic oxide film having a smooth surface can be formed. A good anodic oxide film having such a smooth surface increases the effect of making it difficult for the sprayed ceramic to adhere firmly.

次に、ガス供給穴５２３、及び、洗浄用穴５２４等から、圧縮空気等の気体を供給して各ガス吐出孔５１１から圧縮空気等の気体を噴出しつつ、載置面にＡｌ2Ｏ3等のセラミック溶射膜１０、金属溶射膜（電極）１２、セラミック溶射膜１０を順次積層させて３層の静電チャック１１を形成する。この時、気体の噴出により、ガス吐出孔５１１内には溶射セラミック等が入り難くはなっているが、その一部はガス吐出孔５１１内に入り込み、図２に点線で示すように、塊状の溶射セラミック５３０となってその底部５２１ａに付着する。ところが、本実施形態では、図２に示されるように、溝５２１の底部５２１ａが曲面状とされているため、図５に示したように、溝６２１の底部６２１ａが平面の場合に比べて、ガス吐出孔５１１内に入り込んだ溶射セラミック等が強固に付着することを防止することができる。 Next, a gas such as compressed air is supplied from the gas supply hole 523, the cleaning hole 524, and the like, and a gas such as compressed air is ejected from each gas discharge hole 511, while Al 2 O 3 is applied to the mounting surface. A three-layer electrostatic chuck 11 is formed by sequentially laminating a ceramic sprayed film 10 such as a metal sprayed film (electrode) 12 and a ceramic sprayed film 10. At this time, it is difficult for the sprayed ceramic or the like to enter the gas discharge hole 511 due to the gas ejection, but a part of it enters the gas discharge hole 511, and as shown by a dotted line in FIG. It becomes the thermal sprayed ceramic 530 and adheres to its bottom 521a. However, in this embodiment, as shown in FIG. 2, the bottom 521a of the groove 521 has a curved surface, so that the bottom 621a of the groove 621 is flat as shown in FIG. It is possible to prevent the sprayed ceramic or the like that has entered the gas discharge hole 511 from being firmly attached.

最後に、溝５２１内に流体、例えば、圧縮空気や水を導入して洗浄を行い、セラミック溶射工程で溝５２１内に付着した塊状の溶射セラミック５３０を除去する。この洗浄工程は、図４に示した洗浄用穴５２４及びガス供給穴５２３を使用して行い、圧縮空気によるエアパージ工程、圧縮空気によるエアパージと通水を同時に行う工程、アセトン等の溶媒に浸漬する工程等を適宜組み合わせて行うことができる。この時、上述したとおり、ガス吐出孔５１１内に入り込んだ溶射セラミック等が強固に付着することがないため、溝５２１内に付着した塊状の溶射セラミック５３０を容易に剥離することができ、溶射残渣が残る確率を従来に比べて大幅に低減することができる。   Finally, a fluid such as compressed air or water is introduced into the groove 521 for cleaning, and the massive sprayed ceramic 530 adhering to the groove 521 is removed in the ceramic spraying process. This cleaning process is performed using the cleaning hole 524 and the gas supply hole 523 shown in FIG. 4, and is immersed in a solvent such as acetone, an air purge process using compressed air, an air purge process using compressed air and water passing simultaneously. It can be performed by appropriately combining the steps. At this time, as described above, since the sprayed ceramic or the like that has entered the gas discharge hole 511 does not adhere firmly, the massive sprayed ceramic 530 attached in the groove 521 can be easily peeled off, and the sprayed residue The probability of remaining can be greatly reduced compared to the conventional case.

実際に、上記した図２に示すような構造の実施例について、セラミック溶射後に、洗浄工程を実施したところ、エアパージ工程のみによって塊状の溶射セラミック５３０を全て除去することができ、溝５２１内の塊状の溶射セラミック５３０の残渣の個数をゼロとすることができた。一方、比較例として、図５に示したように溝６２１の底部６２１ａが平面状の基板載置台について調べたところ、エアパージ工程、エアパージと通水を同時に行う工程、アセトンに浸漬する工程、エアパージ工程、エアパージと通水を同時に行う工程、を順次実施して洗浄を行ったにもかかわらず、溝６２１内の塊状の溶射セラミック６３０の残渣の個数が６個あり、ゼロとすることができなかった。   Actually, in the embodiment having the structure as shown in FIG. 2 described above, when the cleaning process was performed after the ceramic spraying, all of the massive sprayed ceramic 530 can be removed only by the air purge process, and the massive form in the groove 521 can be removed. The number of residues of the thermal sprayed ceramic 530 could be reduced to zero. On the other hand, as a comparative example, as shown in FIG. 5, when the bottom 621a of the groove 621 was examined for a planar substrate mounting table, an air purge step, a step of simultaneously performing air purge and water flow, a step of immersing in acetone, an air purge step In spite of performing cleaning by sequentially performing the steps of performing air purge and water flow at the same time, there were six residues of the massive sprayed ceramic 630 in the groove 621 and could not be reduced to zero. .

以上説明したとおり、本実施形態によれば、冷却ガス供給路内に溶射残渣が残ることを防止することができ、溶射残渣による汚染の発生や、流体流路の孔詰まりの発生を防止することができる。なお、本発明は上記の実施形態に限定されるものではなく、各種の変形が可能である。例えば、上記の実施形態では、本発明をプラズマエッチング装置に適用した場合について説明したが、プラズマエッチング装置に限らず、例えばＣＶＤ装置等あらゆる基板処理装置についても同様にして適用することができる。また、上記実施形態では、本発明を冷却ガスを供給する基板載置台に適用した実施形態について説明したが、本発明は基板載置台に限らず、処理ガス等の他の流体を供給するための流体供給機構についても同様にして適用することができる。   As described above, according to the present embodiment, it is possible to prevent the thermal spray residue from remaining in the cooling gas supply path, and to prevent the occurrence of contamination due to the thermal spray residue and the clogging of the fluid flow path. Can do. In addition, this invention is not limited to said embodiment, Various deformation | transformation are possible. For example, in the above embodiment, the case where the present invention is applied to the plasma etching apparatus has been described. However, the present invention is not limited to the plasma etching apparatus, and can be similarly applied to any substrate processing apparatus such as a CVD apparatus. In the above-described embodiment, the embodiment in which the present invention is applied to the substrate mounting table for supplying the cooling gas has been described. However, the present invention is not limited to the substrate mounting table, and for supplying other fluids such as processing gas. The same applies to the fluid supply mechanism.

本発明の実施形態に係るプラズマエッチング装置の概略構成を示す図。The figure which shows schematic structure of the plasma etching apparatus which concerns on embodiment of this invention. 本発明の実施形態に係る基板載置台の要部断面構成を拡大して示す図。The figure which expands and shows the principal part cross-section structure of the substrate mounting base which concerns on embodiment of this invention. 図２の基板載置台の第１の板状部材の上面側の構成を示す図。The figure which shows the structure of the upper surface side of the 1st plate-shaped member of the substrate mounting base of FIG. 図２の基板載置台の第２の板状部材の上面側の構成を示す図。The figure which shows the structure of the upper surface side of the 2nd plate-shaped member of the substrate mounting base of FIG. 比較例の基板載置台の要部断面構成を拡大して示す図。The figure which expands and shows the principal part cross-section structure of the substrate mounting base of a comparative example.

符号の説明Explanation of symbols

５……基盤載置台、１０……絶縁材（セラミック溶射層）、１１……静電チャック、１２……電極、５１０……第１の板状部材、５１１……吐出孔、５２０……第２の板状部材、５２１……溝、５２１ａ……底部。   5... Platform mounting table 10. Insulating material (ceramic sprayed layer) 11. Electrostatic chuck 12. Electrode 510. First plate member 511. 2 plate-like members, 521... Groove, 521a.

Claims (12)

基板が載置される載置面と、前記載置面に開口し当該載置面と前記基板との間にガスを供給する複数のガス吐出孔と、前記ガス吐出孔へガスを供給するためのガス供給路とを有する板状部材を具備し、前記載置面を覆うセラミック溶射層が設けられた基板載置台であって、
少なくとも前記ガス吐出孔と対向する部位の前記ガス供給路の内壁が、当該ガス供給路の幅方向に沿った縦断面形状が下部に向けて凸形状となるＲ面となるように、曲面状に形成されていることを特徴とする基板載置台。 A mounting surface on which the substrate is mounted, a plurality of gas discharge holes that open to the mounting surface and supply gas between the mounting surface and the substrate, and supply gas to the gas discharge holes Comprising a plate-like member having a gas supply path, and a substrate mounting table provided with a ceramic sprayed layer covering the mounting surface,
At least the inner wall of the gas supply passage at a portion facing the gas discharge hole is curved so that the longitudinal cross-sectional shape along the width direction of the gas supply passage becomes a convex surface toward the lower portion. A substrate mounting table which is formed. 請求項１記載の基板載置台であって、
前記ガス供給路は、複数の前記ガス吐出孔により共有されていることを特徴とする基板載置台。 The substrate mounting table according to claim 1,
The substrate mounting table, wherein the gas supply path is shared by the plurality of gas discharge holes. 請求項２記載の基板載置台であって、
前記板状部材は、前記ガス吐出孔を有する第１の板状部材と、底部が曲面状とされた溝を有する第２の板状部材とを接合して構成されていることを特徴とする基板載置台。 The substrate mounting table according to claim 2,
The plate-like member is formed by joining a first plate-like member having the gas discharge hole and a second plate-like member having a groove having a curved bottom portion. Substrate mounting table. 請求項３記載の基板載置台であって、
前記第２の板状部材に、前記ガス供給路内にガスを供給するためのガス供給穴と、前記ガス供給路内を洗浄するための流体を供給又は排出するための洗浄用穴が設けられていることを特徴とする基板載置台。 The substrate mounting table according to claim 3, wherein
The second plate member is provided with a gas supply hole for supplying a gas into the gas supply path and a cleaning hole for supplying or discharging a fluid for cleaning the gas supply path. A substrate mounting table. 請求項１〜４いずれか１項記載の基板載置台であって、
前記板状部材がアルミニウムからなり、前記ガス供給路内に陽極酸化皮膜が形成されていることを特徴とする基板載置台。 A substrate mounting table according to any one of claims 1 to 4,
The substrate mounting table, wherein the plate member is made of aluminum, and an anodized film is formed in the gas supply path. 基板が載置される載置面と、前記載置面に開口し当該載置面と前記基板との間にガスを供給する複数のガス吐出孔と、前記ガス吐出孔へガスを供給するためのガス供給路とを有する板状部材を具備し、前記載置面を覆うセラミック溶射層が設けられた基板載置台の製造方法であって、
少なくとも前記ガス吐出孔と対向する部位の前記ガス供給路の内壁を曲面状とした前記板状部材を形成する工程と、
前記ガス吐出孔からガスを吐出させながら、前記板状部材の前記載置面にセラミック溶射層を形成する工程と、
前記ガス供給路の内部を洗浄する工程と
を具備したことを特徴とする基板載置台の製造方法。 A mounting surface on which the substrate is mounted, a plurality of gas discharge holes that open to the mounting surface and supply gas between the mounting surface and the substrate, and supply gas to the gas discharge holes Comprising a plate-like member having a gas supply path, and a manufacturing method of a substrate mounting table provided with a ceramic sprayed layer covering the mounting surface,
Forming the plate-like member having a curved inner wall of the gas supply path at a site facing at least the gas discharge hole;
Forming a ceramic sprayed layer on the mounting surface of the plate-like member while discharging gas from the gas discharge hole;
And a step of cleaning the inside of the gas supply path. 請求項６記載の基板載置台の製造方法であって、
前記ガス供給路は、複数の前記ガス吐出孔により共有されていることを特徴とする基板載置台の製造方法。 It is a manufacturing method of the substrate mounting base according to claim 6,
The method for manufacturing a substrate mounting table, wherein the gas supply path is shared by the plurality of gas discharge holes. 請求項７記載の基板載置台の製造方法であって、
前記板状部材は、前記ガス吐出孔を有する第１の板状部材と、底部が曲面状とされた溝を有する第２の板状部材とを接合して形成することを特徴とする基板載置台の製造方法。 It is a manufacturing method of the substrate mounting base according to claim 7,
The plate-like member is formed by joining a first plate-like member having the gas discharge hole and a second plate-like member having a groove having a curved bottom portion. A method for manufacturing the table. 請求項８記載の基板載置台の製造方法であって、
前記第２の板状部材に設けられたガス供給穴と、前記第２の板状部材に設けられた洗浄用穴とを用いて、前記ガス供給路の内部に洗浄用流体を供給及び排出して洗浄を行うことを特徴とする基板載置台の製造方法。 It is a manufacturing method of the substrate mounting base according to claim 8,
A cleaning fluid is supplied to and discharged from the gas supply path using a gas supply hole provided in the second plate-like member and a cleaning hole provided in the second plate-like member. And a substrate mounting table manufacturing method. 請求項６〜９いずれか１項記載の基板載置台の製造方法であって、
前記板状部材がアルミニウムからなり、セラミック溶射層を形成する工程の前に前記ガス供給路内に陽極酸化皮膜を形成する工程を具備したことを特徴とする基板載置台の製造方法。 It is a manufacturing method of the substrate mounting base according to any one of claims 6 to 9,
A method for manufacturing a substrate mounting table, wherein the plate-like member is made of aluminum and includes a step of forming an anodized film in the gas supply path before the step of forming a ceramic sprayed layer. 基板を収容して処理する処理チャンバーを具備した基板処理装置であって、
前記処理チャンバー内に、請求項１〜５いずれか１項記載の基板載置台が配設されていることを特徴とする基板処理装置。 A substrate processing apparatus comprising a processing chamber for accommodating and processing a substrate,
6. A substrate processing apparatus, wherein the substrate mounting table according to claim 1 is disposed in the processing chamber. 複数の流体吐出孔を具備した第１の板状部材と、複数の前記流体吐出孔に共有され当該流体吐出孔に流体を供給するための流体供給路を形成する溝を具備した第２の板状部材とを、前記第１の板状部材の下側に前記第２の板状部材が位置するように接合して構成された板状部材を有し、前記第１の板状部材の表面にセラミック溶射膜層が形成された流体供給機構であって、
少なくとも前記流体吐出孔と対向する部位の前記流体供給路を形成する前記溝の底部が、当該溝の幅方向に沿った縦断面形状が下部に向けて凸形状となるＲ面となるように、曲面状に形成されていることを特徴とする流体供給機構。 A first plate member having a plurality of fluid discharge holes, and a second plate having a groove that is shared by the plurality of fluid discharge holes and forms a fluid supply path for supplying fluid to the fluid discharge holes. And a plate-like member formed by joining the second plate-like member so that the second plate-like member is located below the first plate-like member, and the surface of the first plate-like member A fluid supply mechanism having a ceramic sprayed coating layer formed thereon,
At least the bottom of the groove forming the fluid supply path at a portion facing the fluid discharge hole is an R surface in which the longitudinal cross-sectional shape along the width direction of the groove is convex toward the lower part. A fluid supply mechanism which is formed in a curved surface.
JP2006337683A 2006-12-15 2006-12-15 Substrate mounting table, substrate mounting table manufacturing method, substrate processing apparatus, fluid supply mechanism Active JP4937724B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006337683A JP4937724B2 (en) 2006-12-15 2006-12-15 Substrate mounting table, substrate mounting table manufacturing method, substrate processing apparatus, fluid supply mechanism
CN2007101544027A CN101207061B (en) 2006-12-15 2007-09-11 Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism
KR1020070127552A KR100948984B1 (en) 2006-12-15 2007-12-10 Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism
US11/954,832 US8491752B2 (en) 2006-12-15 2007-12-12 Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism
TW096148083A TWI427734B (en) 2006-12-15 2007-12-14 Manufacturing method of substrate mounting table
US13/944,948 US8869376B2 (en) 2006-12-15 2013-07-18 Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006337683A JP4937724B2 (en) 2006-12-15 2006-12-15 Substrate mounting table, substrate mounting table manufacturing method, substrate processing apparatus, fluid supply mechanism

Publications (2)

Publication Number Publication Date
JP2008153314A JP2008153314A (en) 2008-07-03
JP4937724B2 true JP4937724B2 (en) 2012-05-23

Family

ID=39567127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006337683A Active JP4937724B2 (en) 2006-12-15 2006-12-15 Substrate mounting table, substrate mounting table manufacturing method, substrate processing apparatus, fluid supply mechanism

Country Status (4)

Country Link
JP (1) JP4937724B2 (en)
KR (1) KR100948984B1 (en)
CN (1) CN101207061B (en)
TW (1) TWI427734B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011225949A (en) 2010-04-21 2011-11-10 Ibiden Co Ltd Carbon component and method of manufacturing the same
JP6100564B2 (en) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 Substrate processing apparatus and mounting table
CN104752258A (en) * 2013-12-30 2015-07-01 中微半导体设备(上海)有限公司 Cleaning method for plasma-processing chamber
KR101885750B1 (en) * 2014-01-20 2018-08-06 에이에스엠엘 네델란즈 비.브이. Substrate holder and support table for lithography
CN106311843B (en) * 2016-08-31 2018-09-21 重庆泽田汽车部件有限责任公司 A kind of cold punching pressure device of automatic discharging
KR102188779B1 (en) * 2018-10-15 2020-12-08 세메스 주식회사 Apparatus for surpoting substrate and manufacturing mathod threrof
JP7203585B2 (en) * 2018-12-06 2023-01-13 東京エレクトロン株式会社 Substrate support, substrate processing apparatus, substrate processing system, and method of detecting adhesive erosion in substrate support
KR20210090279A (en) * 2018-12-07 2021-07-19 어플라이드 머티어리얼스, 인코포레이티드 Components, methods of manufacturing components, and methods of cleaning components

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338360A (en) * 1980-05-01 1982-07-06 General Motors Corporation Method for coating porous metal structure
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
JPH06349938A (en) * 1993-06-11 1994-12-22 Tokyo Electron Ltd Vacuum processing device
JP3488334B2 (en) * 1996-04-15 2004-01-19 京セラ株式会社 Electrostatic chuck
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
JPH1112742A (en) * 1997-06-27 1999-01-19 Nissin Electric Co Ltd Cvd device, and its cleaning method
US6939409B2 (en) * 2000-12-18 2005-09-06 Sumitomo Precision Products Co., Ltd. Cleaning method and etching method
US6490145B1 (en) * 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
KR20030094492A (en) * 2002-06-04 2003-12-12 삼성전자주식회사 Chuck for supporting a substrate and method for manufacturing the same
JP4260450B2 (en) * 2002-09-20 2009-04-30 東京エレクトロン株式会社 Manufacturing method of electrostatic chuck in vacuum processing apparatus
JP4128469B2 (en) * 2003-02-25 2008-07-30 株式会社日立ハイテクノロジーズ Plasma processing equipment
KR20050116078A (en) * 2004-06-04 2005-12-09 삼성전자주식회사 Electrode for plasma generating apparatus and method of making the same
TWI267940B (en) * 2004-06-28 2006-12-01 Kyocera Corp Electrostatic chuck
JP5004436B2 (en) * 2005-05-23 2012-08-22 東京エレクトロン株式会社 Electrostatic adsorption electrode and processing device
JP2006352151A (en) * 2006-07-24 2006-12-28 Kyocera Corp Electrostatic chuck and its manufacturing method

Also Published As

Publication number Publication date
CN101207061B (en) 2010-09-29
JP2008153314A (en) 2008-07-03
KR20080055645A (en) 2008-06-19
KR100948984B1 (en) 2010-03-23
TWI427734B (en) 2014-02-21
TW200834804A (en) 2008-08-16
CN101207061A (en) 2008-06-25

Similar Documents

Publication Publication Date Title
JP4754469B2 (en) Manufacturing method of substrate mounting table
JP4937724B2 (en) Substrate mounting table, substrate mounting table manufacturing method, substrate processing apparatus, fluid supply mechanism
TWI480949B (en) Substrate handling device and sprinkler
JP5612300B2 (en) Substrate mounting table, manufacturing method thereof, and substrate processing apparatus
JP2005033221A (en) Substrate mounting stand and processor
US8869376B2 (en) Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism
US8636873B2 (en) Plasma processing apparatus and structure therein
TWI533396B (en) Plasma processing apparatus
US20210142983A1 (en) Plasma processing apparatus
JP4493863B2 (en) Plasma processing apparatus, cleaning method thereof, and electrostatic chuck static elimination method
JP4709047B2 (en) Substrate processing apparatus and side wall parts
JP2011040461A (en) Baffle plate and plasma processing apparatus
JP2022028461A (en) Cleaning method of plasma processing device and plasma processing device
JP7537843B2 (en) CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS
JP5302813B2 (en) Deposit control cover and plasma processing apparatus
JP4616605B2 (en) Plasma processing method, plasma processing apparatus, and storage medium
JP7365912B2 (en) Edge ring and substrate processing equipment
JP2004071791A (en) Substrate placement member and substrate treatment apparatus using same
US20080145556A1 (en) Method for manufacturing substrate mounting table
JP5089871B2 (en) Manufacturing method of semiconductor device
JP4126286B2 (en) Processing equipment
US20210098269A1 (en) Substrate processing apparatus and stage cleaning method
JP2021077662A (en) Wafer, cleaning method, substrate processing device, and plasma processing system

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091007

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110222

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110408

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120202

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120221

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120222

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150302

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4937724

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250