JP4935325B2 - Method and apparatus for cleaving brittle materials - Google Patents

Description

  TECHNICAL FIELD The present invention relates to a brittle material cleaving method and apparatus, and more specifically, a brittle material cleaving method for forming a groove on a surface of a brittle material and extending a crack from the groove to cleave the brittle material into a chip having a required shape, and the apparatus. Relates to the device.

Conventionally, by forming a groove on the surface of a brittle material such as a semiconductor wafer or a glass plate, and extending a crack from the groove, a method of cleaving such a brittle material into a semiconductor chip or a liquid crystal display panel having a required shape It has been known.
As a method for cleaving such a brittle material, when the brittle material is held on the upper surface of the support member and a groove is formed on the surface of the brittle material, light such as laser light is irradiated from above the brittle material, It is known that a thermal stress is generated inside to break a brittle material by extending a crack from the groove. (Patent Document 1)
Further, when the brittle material is cleaved, it is also cleaved in a state where the brittle material is adhered to the surface of the pressure-sensitive adhesive tape. (Patent Document 2)
JP-A-8-276398 Japanese Patent Laid-Open No. 2001-226650 (particularly the configuration of FIG. 2)

Here, when the crack formed in the brittle material is expanded as described above, the cullet (dust) is generated from the cleaved portion, and the cullet may adhere to the surface of the brittle material. .
And if it cuts by irradiating a laser beam from the upper direction of a brittle material like patent document 1, the said cullet will be melted by the heating by a laser beam, and it will stick to a brittle material, As a result, a defective article may generate | occur | produce. there were.
In view of such a problem, the present invention provides a brittle material cleaving method and apparatus that does not cause defective products due to cullet.

The method of cleaving a brittle material according to claim 1 is a method of cleaving a brittle material by forming a groove on a cleaved planned line on the surface side of the brittle material and extending a crack from the groove to cleave the brittle material into chips of a predetermined shape. In the method
Adhering the pressure-sensitive adhesive sheet that expands by the required light irradiation to the surface of the transparent support plate that transmits the light, and adhering and supporting the brittle material on the side opposite to the transparent support plate in the pressure-sensitive adhesive sheet,
By irradiating light from the transparent support plate side along the planned cutting line in which the groove of the brittle material is formed, the adhesive sheet at the position irradiated with the light is locally expanded, and the crack is extended from the groove. It is characterized by breaking the brittle material.

  The brittle material cleaving method according to claim 2 is the brittle material cleaving method according to claim 1, wherein the adhesive sheet is formed with adhesive layers having different properties on the brittle material side and the transparent support plate side, At least one of the adhesive layers is characterized by having a property of expanding when irradiated with required light.

The brittle material cleaving method described in claim 3 is the brittle material cleaving method according to claim 2, wherein the brittle material side adhesive layer has a property of losing adhesive force by irradiation with the first light,
When the brittle material is cleaved by the chip, the adhesive force of the adhesive layer on the brittle material side is lost by irradiating the first light from the transparent support plate side to the area where the required chip is adhered, The feature is that a required chip can be picked up.

  The brittle material cleaving method according to claim 4 is the brittle material cleaving method according to claim 3, wherein the first light is infrared light, and the adhesive layer on the brittle material side is infrared light. It is characterized by having the property of being heated and expanded by irradiation and losing adhesive force and not losing adhesive force by irradiation with ultraviolet light.

The brittle material cleaving method according to claim 5 is the brittle material cleaving method according to any one of claims 2 to 4, wherein the adhesive layer on the transparent support plate side is bonded by irradiation with the second light. Has the ability to lose power,
After the brittle material is cleaved into the chip and before picking up the chip, by irradiating the second light from the transparent support plate side to the bonding range of the transparent support plate and the adhesive sheet, The adhesive force of the adhesive layer on the transparent support plate side is lost, and the transparent support plate and the pressure-sensitive adhesive sheet are peeled off.

  The brittle material cleaving method according to claim 6 is the brittle material cleaving method according to claim 5, wherein the second light is ultraviolet light, and the adhesive layer on the transparent support plate side is ultraviolet light. It is characterized in that it has a property of losing adhesive strength upon irradiation and not losing adhesive strength upon irradiation with infrared light.

According to a seventh aspect of the present invention, there is provided a brittle material cleaving apparatus comprising: a supporting member that supports a brittle material having grooves formed on a surface-side cleaving line; an irradiating unit that irradiates required light; A moving means for relatively moving the means,
The support means and the irradiation means are moved relative to each other by the moving means, and the light from the irradiation means is irradiated along the planned cutting line in which the groove is formed, and the crack is extended from the groove to form the brittle material in a predetermined shape. In a brittle material cleaving apparatus that cleaves the chip,
The support member includes a pressure-sensitive adhesive sheet that expands upon irradiation with required light, and adheres and supports the brittle material on the surface of the pressure-sensitive adhesive sheet.
Providing a transparent support plate for supporting the support member and transmitting the light, and bonding the transparent support plate to the opposite side of the brittle material in the pressure-sensitive adhesive sheet;
The irradiation unit is provided on the transparent support plate side, and the irradiation unit irradiates the light from the transparent support plate side along the planned cutting line, thereby locally applying the adhesive sheet at the position irradiated with the light. The brittle material is cleaved by expanding the crack and extending the crack from the groove.

  The brittle material cleaving apparatus according to claim 8 is the brittle material cleaving apparatus according to claim 7, wherein the adhesive sheet is formed with adhesive layers having different properties on the brittle material side and the transparent support plate side, At least one of the adhesive layers is characterized by having a property of expanding when irradiated with required light.

A brittle material cleaving device according to claim 9 is the brittle material cleaving device according to claim 8, comprising pick-up means for picking up a chip from the support member,
The adhesive layer on the brittle material side has the property of losing the adhesive strength by irradiation with the first light,
The irradiating means includes first irradiating means for irradiating first light, and the first irradiating means irradiates the first light from the transparent support plate side to a range where a required chip is bonded, thereby causing the brittleness. The adhesive force of the adhesive layer on the material side is lost, and the required chip can be picked up by pick-up means.

  The brittle material cleaving device according to claim 10 is the brittle material cleaving device according to claim 9, wherein the first light is infrared light, and the adhesive layer on the brittle material side is infrared light. It is characterized by having the property of being heated and expanded by irradiation and losing adhesive force and not losing adhesive force by irradiation with ultraviolet light.

The brittle material cleaving apparatus according to claim 11 is the brittle material cleaving apparatus according to any one of claims 8 to 10, wherein the adhesive layer on the transparent support plate side is bonded by irradiation with the second light. Has the ability to lose power,
The irradiation means includes a second irradiation means for irradiating the second light, and the second irradiation means irradiates the second light from the transparent support plate side to the adhesion range of the transparent support plate and the pressure-sensitive adhesive sheet. The adhesive force of the adhesive layer on the transparent support plate side is lost, and the transparent support plate and the pressure-sensitive adhesive sheet are peeled off.

  The brittle material cleaving apparatus according to claim 12 is the brittle material cleaving apparatus according to claim 11, wherein the second light is ultraviolet light, and the adhesive layer on the transparent support plate side is ultraviolet light. It is characterized in that it has a property of losing adhesive strength upon irradiation and not losing adhesive strength upon irradiation with infrared light.

According to the method and apparatus for cleaving the brittle material according to claims 1 and 7, the brittle material is bonded and supported on the surface of the pressure-sensitive adhesive sheet that expands by light irradiation, and the brittle material is opposite to the brittle material in the pressure-sensitive adhesive sheet. Since the transparent support plate that transmits light is bonded, the light can be irradiated from the transparent support plate side.
As a result, when light passes through the transparent support plate and reaches the pressure-sensitive adhesive sheet, and the pressure-sensitive adhesive sheet in the portion irradiated with light expands, the pressing force generated by the expansion acts on the groove formed in the brittle material. Thus, the brittle material can be cleaved by extending a crack from the groove.
By irradiating the light from the transparent support plate side, the cullet generated during the cleaving process is heated by the laser beam so that it does not adhere to the brittle material, and the occurrence of defective products can be suppressed. It becomes.

  According to the brittle material cleaving method and cleaving apparatus of claim 2 and claim 8, at least one of the adhesive layer to which the brittle material is adhered or the adhesive layer to which the transparent support plate is adhered is provided. If expanded, the brittle material can be cleaved.

  According to the brittle material cleaving method and the cleaving apparatus according to claim 3 and claim 9, since the adhesive layer on the brittle material side loses the adhesive force due to the first light, it is optional by irradiating the first light. It becomes possible to pick up only the chips.

  According to the brittle material cleaving method and the cleaving apparatus according to claim 4 and claim 10, since the adhesive layer on the brittle material side does not lose its adhesive strength by ultraviolet light, ultraviolet light is irradiated when cleaving the brittle material. Different work can be done.

  According to the brittle material cleaving method and the cleaving apparatus according to claim 5 and claim 11, after the brittle material is cleaved, the transparent support plate is peeled off from the pressure-sensitive adhesive sheet by irradiating the second light. Each chip can be easily picked up.

  According to the brittle material cleaving method and the cleaving apparatus according to claim 6 and claim 12, since the adhesive layer on the transparent support plate side does not lose its adhesive strength depending on infrared light, infrared light is used to cleave the brittle material. By using, the brittle material can be cleaved and the transparent support plate can be peeled at different timings, and the brittle material can be cleaved reliably.

1 and 2 show a cleaving station 1 and a pickup station 2 constituting a cleaving apparatus according to the present invention. The cleaving station 1 cleaves a semiconductor wafer 3 as a brittle material. The pick-up station 2 is a device that holds the semiconductor chips 3a obtained by the cleaving one by one and conveys them to the subsequent process.
The semiconductor wafer 3 has a substantially circular shape, and when the semiconductor wafer 3 is cleaved by the cleaving station 1, a substantially square semiconductor chip 3a is obtained. Further, it is desirable that the thickness of the semiconductor wafer 3 to be cut is 0.3 mm or less.
The semiconductor wafer 3 is supported by a support member 4 shown in FIGS. 1 and 2. When the semiconductor wafer 3 is cleaved at the cleaving station 1, the semiconductor wafer 3 is provided between the cleaving station 1 and the pickup station 2. The semiconductor chip 3 a together with the support member 4 is transported to the pickup station 2 by the transport means that does not.

As shown in FIG. 1, the support member 4 includes a ring-shaped holding ring 11 and a double-sided pressure-sensitive adhesive sheet 12 bonded to the lower surface of the holding ring 11.
The inner diameter of the holding ring 11 is formed larger than the outer diameter of the semiconductor wafer 3. When the semiconductor wafer 3 is bonded and supported on the surface of the double-sided pressure-sensitive adhesive sheet 12, the outer circumference of the semiconductor wafer 3 and the inner circumference of the holding ring 11 are reduced. A predetermined interval is formed between them.
In the cleaving station 1, the support member 4 is bonded and supported on a transparent support plate 13 described later.

FIG. 3 shows an enlarged cross-sectional view of the semiconductor wafer 3 and the support member 4. Here, the double-sided pressure-sensitive adhesive sheet 12 will be described. In FIG. 3, the double-sided pressure-sensitive adhesive sheet 12 is shown thick for explanation, but the actual thickness is 0.1 mm or less.
The double-sided pressure-sensitive adhesive sheet 12 has a three-layer structure, and a tape base material 12a located at the center and a first adhesive layer 12b that is laminated on the upper surface of the tape base material 12a and bonds the holding ring 11 and the semiconductor wafer 3 together. And a second adhesive layer 12c that is laminated on the lower surface of the tape base material 12a and adheres the transparent support plate 13 to each other.
The tape base material 12a is made of a stretchable material such as polyester, polyimide, polyethylene, or polyolefin.
Although the first adhesive layer 12b has an adhesive force at room temperature, it has a property of expanding and losing the adhesive force by heating, and direct irradiation with infrared light whose wavelength as a heating source is an infrared region, Due to heat transfer from the tape base material 12a heated by irradiation with infrared light, the first adhesive layer 12b is heated to expand and lose its adhesive force.
The second adhesive layer 12c has a property of being cured and losing adhesive force and transmitting infrared light when irradiated with ultraviolet light having a wavelength in the ultraviolet region.
The first adhesive layer 12b does not lose the adhesive force in response to the ultraviolet light, and the second adhesive layer 12c does not lose the adhesive force in response to the infrared light. In addition, a conventionally well-known adhesive agent can be used for the 1st contact bonding layer 12b and the 2nd contact bonding layer 12c mentioned above.

The cleaving station 1 includes a transparent support plate 13 that supports the support member 4, a holding means 21 that holds the transparent support plate 13, a scriber 22 that forms minute grooves on the surface of the semiconductor wafer 3, and a transparent support First laser light irradiation means 23 for irradiating infrared laser light as first light from the back side of the plate 13 and ultraviolet light irradiation for irradiating ultraviolet light as second light from the back side of the transparent support plate 13 Means 24.
The transparent support plate 13 is made of a transparent material that transmits infrared light and ultraviolet light, and is held horizontally by the holding means 21. Further, when the support member 4 is supported on the transparent support plate 13, the adhesion range between the transparent support plate 13 and the double-sided pressure-sensitive adhesive sheet 12 is completely exposed downward.
The scriber 22 is composed of a disc-shaped cutter 22a and moving means 22b for moving the cutter 22a. The cutter 22a is rotatably provided on the moving means 22b, and an edge is formed on the outer peripheral portion thereof. ing.
By rotating the cutter 22a while pressing it against the surface of the semiconductor wafer 3, a groove 3b is formed on the surface of the semiconductor wafer 3 as shown in FIG. The grooves 3b are formed in a lattice pattern on the surface of the semiconductor wafer 3 by being moved along.

The first laser light irradiating means 23 is provided below the transparent support plate 13, and a laser oscillator 23a that oscillates infrared laser light, a condenser lens 23b that condenses the oscillated infrared laser light, and a laser oscillator 23a and moving means 23c for moving the condensing lens 23b integrally in the horizontal direction.
As the laser oscillator 23a, a CO ₂ laser that oscillates laser light in the far infrared region or a YAG laser that oscillates laser light in the near infrared region can be used. When using a YAG laser, a transparent support plate is used. The material of 13 can be glass.
The infrared laser light oscillated by the laser oscillator 23a is condensed and irradiated onto the first adhesive layer 12b located on the back side of the groove 3b in the semiconductor wafer 3 by the condenser lens 23b. (Fig. 3 (b))
The irradiated infrared laser light passes through the transparent support plate 13, the second adhesive layer 12c, and the tape base material 12a, and reaches the first adhesive layer 12b, and then reaches the first adhesive layer 12b and the tape base material 12a. They are absorbed to heat them.
As a result, the portion of the first adhesive layer 12b irradiated with the infrared laser light is locally heated, and the portion of the first adhesive layer 12b irradiated with the infrared laser light expands locally. It becomes like this.

The moving means 23c moves the laser oscillator 23a and the condenser lens 23b along the planned cutting line, and at this time moves the laser oscillator 23a and the condenser lens 23b following a predetermined distance behind the cutter 22a of the scriber 22.
Thus, by moving the position irradiated with the infrared laser light along the groove 3b formed by the scriber 22, the portion of the first adhesive layer 12b irradiated with the infrared laser light becomes the groove 3b. It expands locally at the position where is formed.
When the first adhesive layer 12b expands, a pressing force is generated toward the front side and the back side of the double-sided pressure-sensitive adhesive sheet 12, but the transparent support plate 13 bonded to the back side of the double-sided pressure-sensitive adhesive sheet 12 is deformed. Since it is regulated, the semiconductor wafer 3 side is raised by this pressing force.
As a result, a crack extends from the groove 3b formed on the surface of the semiconductor wafer 3 by this pressing force, and when the crack reaches the back surface of the semiconductor wafer 3, the semiconductor wafer 3 is cleaved.
The scriber 22 completes the formation of the grooves 3b in a lattice pattern along the planned cutting line on the entire surface of the semiconductor wafer 3, and then the first laser beam irradiating means 23 irradiates the infrared laser beam. You may make it cleave.

The ultraviolet light irradiating means 24 is provided below the transparent support plate 13, and an ultraviolet lamp 24a that emits ultraviolet light and a reflection that reflects the ultraviolet light emitted by the ultraviolet light lamp 24a toward the transparent support plate 13 side. A mirror 24b and moving means 24c for moving the ultraviolet lamp 24a and the reflecting mirror 24b are provided.
The ultraviolet light irradiated from the ultraviolet lamp 24a is reflected directly or reflected by the reflecting mirror 24b, then passes through the transparent support plate 13 and is irradiated on the second adhesive layer 12c of the double-sided pressure-sensitive adhesive sheet 12.
The moving means 24c moves the ultraviolet lamp 24a and the reflecting mirror 24b so that the entire bonding range between the second adhesive layer 12c and the transparent support plate 13 is irradiated with ultraviolet light.
In addition, you may use the thing of the structure which irradiates the whole adhesion range of the 2nd contact bonding layer 12c and the transparent support plate 13 at once as the ultraviolet light irradiation means 24. FIG. In that case, the moving means 24c is unnecessary.

The pickup station 2 includes a holding unit 31 that holds the holding ring 11 of the support member 4, a separation unit 32 that separates the cleaved semiconductor chips 3 a from each other, and a first light from the back side of the semiconductor wafer 3. The second laser beam irradiating means 33 for irradiating the infrared laser light and the pickup means 34 for sucking and holding the semiconductor chip 3a and transporting it to the subsequent process.
A support member 4 peeled off from the transparent support plate 13 of the cleaving station 1 is conveyed to the pickup station 2, and the holding means 31 holds the support member 4 horizontally. ing.
The separation means 32 includes an elevating mechanism 32a for elevating and lowering the holding means 31 and a ring-shaped pressing member 32b. When the support member 4 is transported to the pickup station 2, the elevating mechanism 32a is a holding means. 31 is positioned upward so that the double-sided PSA sheet 12 of the support member 4 and the pressing member 32b do not contact each other.
The pressing member 32 b has a ring shape, and is manufactured to have a diameter larger than the outer diameter of the semiconductor wafer 3 and smaller than the inner diameter of the holding ring 11. Further, when the support member 4 is held by the holding means 31, the center of the holding ring 11 and the center of the pressing member 32b coincide with each other.
When the holding means 31 is lowered by the elevating mechanism 32a, the pressing member 32b comes into contact with the double-sided adhesive sheet 12 positioned between the semiconductor wafer 3 and the holding ring 11, and the double-sided adhesive on the inner peripheral side with respect to the pressing member 32b. The sheet 12 is pressed upward relative to the holding ring 11.
As a result, the double-sided pressure-sensitive adhesive sheet 12 expands in all directions, the semiconductor chips 3a on the double-sided pressure-sensitive adhesive sheet 12 are separated from each other, and a gap is formed between each semiconductor chip 3a.
By separating the semiconductor chips 3a from each other in this manner, the semiconductor chips 3a can be picked up, and at this time, the adjacent semiconductor chips 3a are in contact with each other and the adjacent semiconductor chips 3a are prevented from being separated. Can do.

Since the second laser light irradiation means 33 has substantially the same configuration as the first laser light irradiation means 23, a detailed description thereof will be omitted, but the second laser light irradiation means 33 is also a YAG laser or a CO ₂ laser. Irradiation with infrared laser light.
The condensing lens 33b of the second laser light irradiating means 33 has the first adhesive layer in a range where the infrared laser light is substantially the same as or narrower than the adhesive range between the single semiconductor chip 3a and the first adhesive layer 12b. It concentrates so that 12b may be irradiated.
The moving means 33C moves the laser oscillator 33a and the condensing lens 33b to the position of the required semiconductor chip 3a. In particular, the condensing lens 33b collects infrared laser light in a range narrower than the bonding range. In the case of light, the moving means 33b moves the laser oscillator 33a and the condenser lens 33b so that the entire laser beam is irradiated with infrared laser light.
In this way, when the second laser beam irradiation means 33 irradiates the infrared laser beam to the required bonding range of the semiconductor chip 3a, the first adhesive layer 12b of the portion concerned is transmitted from the infrared laser beam or the tape substrate 12a. Heated by heat, expands and loses adhesive strength.
As a result, the semiconductor chip 3a is lifted with respect to the adjacent semiconductor chip 3a, and the adhesive force of the first adhesive layer 12b in the portion is lost, so that it can be easily picked up by the pickup means 34. become.
The pickup means 34 is provided above the support member 4 and includes a suction head 34a that sucks and holds the upper surface of the cleaved semiconductor chip 3a, and a moving means 34b that moves the suction head 34a.
The suction head 34a sucks and holds the semiconductor chips 3a one by one by generating a negative pressure in a suction nozzle provided at the tip thereof by a negative pressure generating means (not shown).
The moving means 34b moves the suction head 34a above the semiconductor chip 3a to be picked up, and when the semiconductor chip 3a is held by the suction head 34a, the semiconductor chip 3a is transported to a later process (not shown). Yes.

Hereinafter, a method for manufacturing the semiconductor chip 3a using the cleaving station 1 and the pickup station 2 having the above-described configuration will be described.
First, the support member 4 and the semiconductor wafer 3 are supplied to the cleaving station 1.
Specifically, the double-sided pressure-sensitive adhesive sheet 12 is bonded to the upper surface of the transparent support plate 13 with the transparent support plate 13 held in advance by the holding means 21.
Next, when the holding ring 11 is bonded to the first adhesive layer 12 b of the double-sided pressure-sensitive adhesive sheet 12 to obtain the support member 4, the semiconductor wafer 3 is bonded to the first adhesive layer 12 b inside the holding ring 11.

Next, in the cleaving station 1, the semiconductor wafer 3 is cleaved using the scriber 22 and the first laser light irradiation means 23.
Specifically, a groove 3b is formed on the surface of the semiconductor wafer 3 along the planned cutting line by the scriber 22 (FIG. 3 (a)), and infrared light is irradiated from the back side of the groove 3b by the first laser light irradiation means 23. Irradiate with laser light. (Fig. 3 (b))
By irradiating infrared laser light from the back surface side of the groove 3b of the semiconductor wafer 3, the infrared laser light passes through the transparent support plate 13, the second adhesive layer 12c, and the tape base material 12a to reach the first adhesive layer 12b. While being irradiated and heated, it is also heated by heat transfer from the tape substrate 12a heated by irradiation with infrared laser light.
The first adhesive layer 12b is locally expanded by heating, and the semiconductor wafer 3 is pressed from the back side by the pressing force due to the expansion. As a result, the crack extends from the groove 3b and the semiconductor wafer 3 is cut.
Thereafter, by moving the scriber 22 and the first laser beam irradiation means 23 along a predetermined cutting line, the semiconductor wafer 3 is cut into a lattice shape, and the semiconductor chip 3a is obtained.

When the semiconductor wafer 3 is cleaved by the semiconductor chip 3 a, the support member 4 is peeled from the transparent support plate 13 and the support member 4 is transported to the pickup station 2.
Specifically, the ultraviolet light irradiation means 24 irradiates the entire area of the bonding range between the transparent support plate 13 and the second adhesive layer 12c from below the support member 4 to cure the second adhesive layer 12c. After the adhesive force is lost and the support member 4 can be peeled from the transparent support plate 13 (FIG. 3C), a conveying means (not shown) adsorbs the holding ring 11 of the support member 4 and moves upward. It peels by moving.
Then, the support member 4 is transported from the cleaving station 1 to the pickup station 2.

In the pickup station 2, the semiconductor chips 3a on the double-sided adhesive sheet 12 are first separated from each other. (Fig. 3 (d))
First, when the support member 4 is held by the holding means 31 of the pickup station 2, the elevating mechanism 32a of the separation means 32 positions the holding means 31 upward. For this reason, the double-sided pressure-sensitive adhesive sheet 12 of the support member 4 and the pressing member 32b. And are not in contact with each other.
Next, the elevating mechanism 32a lowers the holding means 31 to bring the double-sided pressure-sensitive adhesive sheet 12 of the support member 4 into contact with the pressing member 32b, and the double-sided pressure-sensitive adhesive sheet 12 located on the inner peripheral side of the pressing member 32b holds the holding ring. 11 is pressed relatively upward.
As a result, the double-sided pressure-sensitive adhesive sheet 12 on the inner peripheral side of the holding ring 11 expands in all directions, and the semiconductor chips 3a that are in close contact with each other on the double-sided pressure-sensitive adhesive sheet 12 are separated from each other.

Next, the pick-up station 2 picks up a required semiconductor chip 3a and transports the semiconductor chip 3 to a subsequent process (not shown) (FIG. 3E).
Specifically, infrared laser light is irradiated from the back side of the required semiconductor chip 3a to be picked up by the operation of the second laser light irradiation means 33, and the pickup means 34 picks up the semiconductor chip 3a and Not carried to the subsequent process.
At this time, the second laser light irradiation means 33 irradiates infrared laser light, so that the first adhesive layer 12b in the range of adhesion with the required semiconductor chip 3a expands and loses the adhesive force, and as a result, the semiconductor The chip 3a is lifted upward with respect to the surrounding semiconductor chip 3a.
From this state, the pickup means 34 sucks and holds the semiconductor chip 3a from above, moves the sucked and held semiconductor chip 3a upward, peels the semiconductor chip 3a from the first adhesive layer 12b, and holds the semiconductor chip 3a. Transport to the subsequent process.

As described above, according to the cleaving apparatus of this embodiment, when the semiconductor wafer 3 is cleaved, the infrared laser light is not irradiated from above, so that the cullet generated by cleaving the semiconductor wafer 3 adheres to the surface of the semiconductor wafer 3. Even so, it is possible to prevent the cullet from welding to the semiconductor wafer 3.
Further, since the crack is extended from the groove 3b to cleave the semiconductor wafer 3, it is not necessary to set a cutting margin necessary for cutting the semiconductor wafer using laser light, water flow, or the like. The semiconductor chip 3a can be obtained.

Next, a second embodiment according to the present invention will be described. In the second embodiment, the same cleaving apparatus as in the first embodiment can be used, and the same operations as those in the first embodiment are carried out for matters not described below. Shall.
In the present embodiment, the first adhesive layer 12b of the double-sided pressure-sensitive adhesive sheet 12 in the support member 4 has a property of losing adhesive force by irradiation with ultraviolet light, and the second adhesive layer 12c expands by irradiation with infrared light. At the same time, it has the property of losing adhesive strength.
The cleaving station 1 is provided with the first laser light irradiation means 23 and an infrared light irradiation means instead of the ultraviolet light irradiation means 24, and the infrared light irradiation means is a red light emitting infrared light. An external light lamp and a reflecting mirror that reflects infrared light toward the semiconductor wafer 3 are provided.
The second laser light irradiation means 33 in the pickup station 2 emits ultraviolet laser light instead of infrared laser light.

In this second embodiment, in order to cleave the semiconductor wafer 3 at the cleaving station 1, the first laser beam irradiating means 23 irradiates the infrared laser beam along a required cleaving line. .
As a result, the portion of the second adhesive layer 12c irradiated with the infrared laser light locally expands, and the pressing force generated by the expansion of the second adhesive layer 12c passes through the tape substrate 12a and the first adhesive layer 12b. The semiconductor wafer 3 is cleaved by extending a crack from the groove on the surface of the semiconductor wafer 3.
Next, when the support member 4 is peeled from the transparent support plate 13 in the cleaving station 1, infrared light is irradiated to the entire bonding range between the transparent support plate 13 and the second adhesive layer 12c by infrared light irradiation means. The adhesive force of the second adhesive layer is lost.
In the pickup station 2, when the semiconductor chips 3a previously separated from each other by the separation means are picked up, the second laser light irradiation means 33 irradiates the back surface of the required semiconductor chip 3a with ultraviolet laser light, The first adhesive layer 12b that adheres the semiconductor chip 3a loses the adhesive force and is picked up by the pickup means 34.
Thus, the semiconductor wafer 3 can also be cleaved by locally expanding the second adhesive layer 12c formed on the side of the transparent support plate 13 of the double-sided pressure-sensitive adhesive sheet 12, and the first embodiment described above. The same effect can be obtained.

In the first embodiment, the first adhesive layer 12b of the double-sided pressure-sensitive adhesive sheet 12 has a property of swelling by ultraviolet light and loses adhesive strength, and the second adhesive layer 12c has a property of losing adhesive strength by heating. May be.
Further, instead of the second laser beam irradiation means 33 of the pickup station 2 of the first embodiment, the adhesive range of the chip 3a is heated via the chip 3a by directly contacting the required chip 3a, or a double-sided adhesive sheet A heater that directly heats the bonding range of the required chip 3a in No. 12 from the back side may be used.
Further, instead of the first laser beam irradiation means of the cleaving station of the second embodiment, a heater that heats the transparent support plate and heats the second adhesive layer by the heat transfer to expand the portion may be used. good.
In the first and second embodiments, the scriber 22, the first and second laser light irradiation means 23 and 33, the ultraviolet light irradiation means 24, the pickup means 34, and the infrared light irradiation means are respectively moved by moving means. Although it moves, the said holding means 21 and 31 may be moved and these and the support member 4 may be moved relatively.
Further, the double-sided pressure-sensitive adhesive sheet 12 may be one in which the tape base material 12a is not laminated.

The side view which showed the cleaving station which comprises the cleaving apparatus concerning a present Example. The side view which showed the pick-up station which comprises the said cleaving apparatus. The expanded sectional view about a supporting member and a semiconductor wafer is shown, (a) shows the state where the groove is formed in the semiconductor wafer, (b) shows the state where the semiconductor wafer is cleaved by irradiation with infrared laser light, (C) is a state in which the adhesive force of the second adhesive layer is lost by irradiating ultraviolet light, (d) is a state in which the double-sided adhesive sheet is expanded and the semiconductor chips are separated, and (e) is A state is shown in which pick-up is performed while losing the adhesive force in the required semiconductor chip bonding range.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Cleaving station 2 Pick-up station 3 Semiconductor wafer 3a Semiconductor chip 12 Double-sided adhesive sheet 12a Tape base material 12b First adhesive layer 12c Second adhesive layer 13 Transparent support plate 22 Scriber 23 First laser light irradiation means 24 Ultraviolet light irradiation means 32 Separation Means 33 Second laser light irradiation means 34 Pickup means

Claims (12)

In the method of cleaving a brittle material, a groove is formed on the planned cutting line on the surface side of the brittle material, and a crack is extended from the groove to cleave the brittle material into chips of a predetermined shape.
Adhering the pressure-sensitive adhesive sheet that expands by the required light irradiation to the surface of the transparent support plate that transmits the light, and adhering and supporting the brittle material on the side opposite to the transparent support plate in the pressure-sensitive adhesive sheet,
By irradiating light from the transparent support plate side along the planned cutting line in which the groove of the brittle material is formed, the adhesive sheet at the position irradiated with the light is locally expanded, and the crack is extended from the groove. A method for cleaving a brittle material, characterized by cleaving the brittle material.   The pressure-sensitive adhesive sheet is characterized in that an adhesive layer having different properties is formed on the brittle material side and the transparent support plate side, and at least one of the adhesive layers has a property of expanding when irradiated with required light. The method for cleaving a brittle material according to claim 1. The adhesive layer on the brittle material side has the property of losing the adhesive strength by irradiation with the first light,
When the brittle material is cleaved by the chip, the adhesive force of the adhesive layer on the brittle material side is lost by irradiating the first light from the transparent support plate side to the area where the required chip is adhered, The brittle material cleaving method according to claim 2, wherein a required chip can be picked up.   The first light is infrared light, and the adhesive layer on the brittle material side is heated and expanded by irradiation with infrared light and loses adhesive strength, and does not lose adhesive strength by irradiation with ultraviolet light. The method for cleaving a brittle material according to claim 3. The adhesive layer on the transparent support plate side has the property of losing the adhesive strength by irradiation with the second light,
After the brittle material is cleaved into the chip and before picking up the chip, by irradiating the second light from the transparent support plate side to the bonding range of the transparent support plate and the adhesive sheet, The brittle material cleaving method according to any one of claims 2 to 4, wherein the adhesive force of the adhesive layer on the transparent support plate side is lost, and the transparent support plate and the pressure-sensitive adhesive sheet are peeled off.   The second light is ultraviolet light, and the adhesive layer on the transparent support plate side has a property of losing adhesive force when irradiated with ultraviolet light and not losing adhesive force when irradiated with infrared light. The brittle material cleaving method according to claim 5, wherein the brittle material is cleaved. A support member for supporting a brittle material having grooves formed on the planned cutting line on the surface side, irradiation means for irradiating required light, and movement means for relatively moving the support member and the irradiation means,
The support means and the irradiation means are moved relative to each other by the moving means, and the light from the irradiation means is irradiated along the planned cutting line in which the groove is formed, and the crack is extended from the groove to form the brittle material in a predetermined shape. In a brittle material cleaving apparatus that cleaves the chip,
The support member includes a pressure-sensitive adhesive sheet that expands upon irradiation with required light, and adheres and supports the brittle material on the surface of the pressure-sensitive adhesive sheet.
Providing a transparent support plate for supporting the support member and transmitting the light, and bonding the transparent support plate to the opposite side of the brittle material in the pressure-sensitive adhesive sheet;
The irradiation unit is provided on the transparent support plate side, and the irradiation unit irradiates the light from the transparent support plate side along the planned cutting line, thereby locally applying the adhesive sheet at the position irradiated with the light. The brittle material cleaving apparatus is characterized in that the brittle material is cleaved by expanding the cracks and extending the cracks from the grooves.   The pressure-sensitive adhesive sheet is characterized in that an adhesive layer having different properties is formed on the brittle material side and the transparent support plate side, and at least one of the adhesive layers has a property of expanding when irradiated with required light. The brittle material cleaving apparatus according to claim 7. Pickup means for picking up a chip from the support member,
The adhesive layer on the brittle material side has the property of losing the adhesive strength by irradiation with the first light,
The irradiating means includes first irradiating means for irradiating first light, and the first irradiating means irradiates the first light from the transparent support plate side to a range where a required chip is bonded, thereby causing the brittleness. 9. The brittle material cleaving apparatus according to claim 8, wherein the adhesive force of the adhesive layer on the material side is lost, and the required chip can be picked up by pick-up means.   The first light is infrared light, and the adhesive layer on the brittle material side is heated and expanded by irradiation with infrared light and loses adhesive strength, and does not lose adhesive strength by irradiation with ultraviolet light. The brittle material cleaving device according to claim 9, comprising: The adhesive layer on the transparent support plate side has the property of losing the adhesive strength by irradiation with the second light,
The irradiation means includes a second irradiation means for irradiating the second light, and the second irradiation means irradiates the second light from the transparent support plate side to the adhesion range of the transparent support plate and the pressure-sensitive adhesive sheet. The brittle material cleaving apparatus according to any one of claims 8 to 10, wherein the adhesive force of the adhesive layer on the transparent support plate side is lost, and the transparent support plate and the adhesive sheet are peeled off.   The second light is ultraviolet light, and the adhesive layer on the transparent support plate side has a property of losing adhesive force when irradiated with ultraviolet light and not losing adhesive force when irradiated with infrared light. 12. The brittle material cleaving device according to claim 11, wherein

Images