JP4935024B2 - ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE USING THE SAME - Google Patents
ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE USING THE SAME Download PDFInfo
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- JP4935024B2 JP4935024B2 JP2005244208A JP2005244208A JP4935024B2 JP 4935024 B2 JP4935024 B2 JP 4935024B2 JP 2005244208 A JP2005244208 A JP 2005244208A JP 2005244208 A JP2005244208 A JP 2005244208A JP 4935024 B2 JP4935024 B2 JP 4935024B2
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- 125000005400 pyridylcarbonyl group Chemical group N1=C(C=CC=C1)C(=O)* 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- DLJHXMRDIWMMGO-UHFFFAOYSA-N quinolin-8-ol;zinc Chemical compound [Zn].C1=CN=C2C(O)=CC=CC2=C1.C1=CN=C2C(O)=CC=CC2=C1 DLJHXMRDIWMMGO-UHFFFAOYSA-N 0.000 description 1
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- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
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- 235000021286 stilbenes Nutrition 0.000 description 1
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- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Electroluminescent Light Sources (AREA)
Description
本発明は有機エレクトロルミネッセンス素子に関し、特に発光効率の高い、発光寿命の長い有機エレクトロルミネッセンス素子に関する。 The present invention relates to an organic electroluminescence element, and particularly relates to an organic electroluminescence element having high luminous efficiency and a long emission lifetime.
従来、発光型の電子ディスプレイデバイスとして、エレクトロルミネッセンスディスプレイ(以下、ELDという)がある。ELDの構成要素としては、無機エレクトロルミネッセンス素子や有機エレクトロルミネッセンス素子(以下、有機EL素子という)が挙げられる。無機エレクトロルミネッセンス素子は平面型光源として使用されてきたが、発光素子を駆動させるためには交流の高電圧が必要である。有機EL素子は、発光する化合物を含有する発光層を陰極と陽極で挟んだ構成を有し、発光層に電子及び正孔を注入して、再結合させることにより励起子(エキシトン)を生成させ、このエキシトンが失活する際の光の放出(蛍光・燐光)を利用して発光する素子であり、数V〜数十V程度の電圧で発光が可能であり、さらに、自己発光型であるために視野角に富み、視認性が高く、薄膜型の完全固体素子であるために省スペース、携帯性等の観点から注目されている。 Conventionally, as a light-emitting electronic display device, there is an electroluminescence display (hereinafter referred to as ELD). Examples of constituent elements of ELD include inorganic electroluminescent elements and organic electroluminescent elements (hereinafter referred to as organic EL elements). Inorganic electroluminescent elements have been used as planar light sources, but an alternating high voltage is required to drive the light emitting elements. An organic EL device has a structure in which a light emitting layer containing a compound that emits light is sandwiched between a cathode and an anode, and injects electrons and holes into the light emitting layer and recombines them to generate excitons. An element that emits light by using light emission (fluorescence / phosphorescence) when this exciton is deactivated, and can emit light at a voltage of several V to several tens V, and is self-luminous. Therefore, it has a wide viewing angle, high visibility, and since it is a thin-film type complete solid-state device, it has attracted attention from the viewpoints of space saving and portability.
しかしながら、今後の実用化に向けた有機EL素子においては、さらに低消費電力で効率よく高輝度に発光する有機EL素子の開発が望まれている。 However, in organic EL elements for practical use in the future, development of organic EL elements that emit light efficiently and with high luminance with lower power consumption is desired.
特許第3093796号明細書では、スチルベン誘導体、ジスチリルアリーレン誘導体またはトリススチリルアリーレン誘導体に、微量の蛍光体をドープし、発光輝度の向上、素子の長寿命化を達成している。 In Japanese Patent No. 3093796, a small amount of phosphor is doped into a stilbene derivative, a distyrylarylene derivative or a tristyrylarylene derivative to achieve an improvement in light emission luminance and a longer device lifetime.
また、8−ヒドロキシキノリンアルミニウム錯体をホスト化合物として、これに微量の蛍光体をドープした有機発光層を有する素子(例えば、特開昭63−264692号公報)、8−ヒドロキシキノリンアルミニウム錯体をホスト化合物として、これにキナクリドン系色素をドープした有機発光層を有する素子(例えば、特開平3−255190号公報)等が知られている。 Further, an element having an organic light-emitting layer in which an 8-hydroxyquinoline aluminum complex is used as a host compound and a small amount of phosphor is doped thereto (for example, JP-A 63-264692), and an 8-hydroxyquinoline aluminum complex is used as a host compound. For example, an element having an organic light emitting layer doped with a quinacridone dye (for example, JP-A-3-255190) is known.
以上のように、励起一重項からの発光を用いる場合、一重項励起子と三重項励起子の生成比が1:3であるため発光性励起種の生成確率が25%であり、光の取り出し効率が約20%であるため、外部取り出し量子効率(ηext)の限界は5%とされている。 As described above, when light emission from excited singlet is used, the generation ratio of singlet excitons and triplet excitons is 1: 3, and thus the generation probability of luminescent excited species is 25%. Since the efficiency is about 20%, the limit of the external extraction quantum efficiency (ηext) is set to 5%.
ところが、プリンストン大より励起三重項からの燐光発光を用いる有機EL素子の報告(M.A.Baldo et al.,nature、395巻、151−154ページ(1998年))がされて以来、室温で燐光を示す材料の研究が活発になってきている。 However, since Princeton University reported on organic EL devices using phosphorescence emission from excited triplets (MA Baldo et al., Nature, 395, 151-154 (1998)), at room temperature. Research on materials that exhibit phosphorescence has become active.
例えばM.A.Baldo et al.,nature、403巻、17号、750−753ページ(2000年)、また米国特許第6,097,147号明細書等にも開示されている。 For example, M.M. A. Baldo et al. , Nature, 403, 17, 750-753 (2000), US Pat. No. 6,097,147, and the like.
励起三重項を使用すると、内部量子効率の上限が100%となるため、励起一重項の場合に比べて原理的に発光効率が4倍となり、冷陰極管とほぼ同等の性能が得られる可能性があることから照明用途としても注目されている。 When excited triplets are used, the upper limit of internal quantum efficiency is 100%, so that in principle the luminous efficiency is four times that of excited singlets, and there is a possibility that almost the same performance as cold cathode tubes can be obtained. Therefore, it is attracting attention as a lighting application.
例えば、S.Lamansky et al.,J.Am.Chem.Soc.,123巻,4304ページ(2001年)等においては、多くの化合物がイリジウム錯体系等重金属錯体を中心に合成検討されている。 For example, S.M. Lamansky et al. , J .; Am. Chem. Soc. , 123, 4304 (2001), etc., many compounds have been studied for synthesis centering on heavy metal complexes such as iridium complexes.
また、前述のM.A.Baldo et al.,nature,403巻,17号,750−753ページ(2000年)においては、ドーパントとして、トリス(2−フェニルピリジン)イリジウムを用いた検討がされている。 In addition, the aforementioned M.I. A. Baldo et al. , Nature, Vol. 403, No. 17, pages 750-753 (2000), studies have been made using tris (2-phenylpyridine) iridium as a dopant.
その他、M.E.Tompson等は、The 10th International Workshop on Inorganic and Organic Electroluminescence(EL’00、浜松)において、ドーパントとしてL2Ir(acac)、例えば、(ppy)2Ir(acac)を、また、Moon−Jae Youn.0g、Tetsuo Tsutsui等は、やはり、The 10th International Workshop on Inorganic and Organic Electroluminescence(EL’00、浜松)において、ドーパントとして、トリス(2−(p−トリル)ピリジン)イリジウム(Ir(ptpy)3),トリス(ベンゾ[h]キノリン)イリジウム(Ir(bzq)3)等を用いた検討を行っている(なおこれらの金属錯体は一般にオルトメタル化イリジウム錯体と呼ばれている。)。 In addition, M.M. E. Thompson et al., In The 10th International Works on Inorganic and Organic Electroluminescence (EL'00, Hamamatsu), used L 2 Ir (acac), for example, (ppy) 2 Ir (acac) as a dopant. 0 g, Tetsuo Tsutsui, etc., again, The 10th International Workshop on Inorganic and Organic Electroluminescence (EL'00, Hamamatsu) in, as a dopant tris (2-(p-tolyl) pyridine) iridium (Ir (ptpy) 3), Studies using tris (benzo [h] quinoline) iridium (Ir (bzq) 3 ) and the like are being conducted (note that these metal complexes are generally called orthometalated iridium complexes).
また、前記、S.Lamansky et al.,J.Am.Chem.Soc.,123巻,4304ページ(2001年)等においても、各種イリジウム錯体を用いて素子化する試みがされている。 In addition, S. Lamansky et al. , J .; Am. Chem. Soc. , 123, 4304 (2001), etc., attempts have been made to form devices using various iridium complexes.
また、高い発光効率を得るために、The 10th International Workshop on Inorganic and Organic Electroluminescence(EL’00、浜松)では、Ikai等はホール輸送性の化合物を燐光性化合物のホストとして用いている。また、M.E.Tompson等は、各種電子輸送性材料を燐光性化合物のホストとして、これらに新規なイリジウム錯体をドープして用いている。 In order to obtain high luminous efficiency, in the 10th International Works on Inorganic and Organic Electroluminescence (EL'00, Hamamatsu), Ikai et al. Uses a hole transporting compound as a host of a phosphorescent compound. In addition, M.M. E. Thompson et al. Use various electron transporting materials as a host of a phosphorescent compound, doped with a novel iridium complex.
中心金属をイリジウムの代わりに白金としたオルトメタル化錯体も注目されている。この種の錯体に関しては、配位子に特徴を持たせた例が多数知られている(例えば、特許文献1〜5及び非特許文献1参照。)。 Orthometalated complexes in which the central metal is platinum instead of iridium are also attracting attention. With regard to this type of complex, there are many known examples in which a ligand is characterized (see, for example, Patent Documents 1 to 5 and Non-Patent Document 1).
何れの場合も発光素子とした場合の発光輝度や発光効率は、その発光する光が燐光に由来することから、従来の素子に比べ大幅に改良されるものであるが、素子の発光寿命については従来の素子よりも低いという問題点があった。このように、りん光性の高効率の発光材料は、発光波長の短波化と素子の発光寿命の改善が難しく実用に耐えうる性能を十分に達成できていないのが現状である。 In any case, the light emission luminance and light emission efficiency of the light emitting device are greatly improved compared to conventional devices because the emitted light is derived from phosphorescence. There was a problem that it was lower than the conventional element. As described above, phosphorescent high-efficiency light-emitting materials are not capable of sufficiently achieving practical performance because it is difficult to shorten the emission wavelength and improve the light emission lifetime of the device.
これらを改善するものとして、フェニルイミダゾール誘導体を配位子としたIr錯体やPt錯体が知られている(特許文献6、7参照。)。しかし、これら錯体の発光効率と素子寿命は十分なものでなく、更なる効率と素子寿命向上が求められている。
本発明は係る課題に鑑みてなされたものであり、本発明の目的は、発光波長が制御され、高い発光効率を示し、且つ、発光寿命の長い有機EL素子、照明装置及び表示装置を提供することである。 The present invention has been made in view of the above problems, and an object of the present invention is to provide an organic EL element, a lighting device, and a display device that have a light emission wavelength controlled, exhibit high light emission efficiency, and have a long light emission lifetime. That is.
上記課題は、以下の構成(1)〜(9)により解決することができ、特に本願発明は、構成(1)において、一般式(1)中のA1、B2がベンゼン環を形成するのに必要な残基を表し、B1がピラゾール環を形成するのに必要な残基を表し、Lが単なる結合手を表わすものである。 Above-mentioned problems, Ki de be solved by the following constitution (1) to (9), in particular the present invention, in the configuration (1), the general formula (1) of A1, B2 is to form a benzene ring Represents a residue necessary for forming a pyrazole ring, and L represents a simple bond.
(1)陽極と陰極により挟まれた、少なくとも発光層を含有する有機エレクトロルミネッセンス素子において、前記発光層が下記一般式(1)で表される化合物の少なくとも1つを含有する事を特徴とする有機エレクトロルミネッセンス素子。 (1) In an organic electroluminescence device containing at least a light emitting layer sandwiched between an anode and a cathode, the light emitting layer contains at least one compound represented by the following general formula (1). Organic electroluminescence device.
(式中、Raは水素原子、脂肪族基、芳香族基、複素環基を表し、Rb、Rcは水素原子又は置換基を表し、XはN又はCを表し、A1、B2は芳香族環、芳香族複素環を形成するのに必要な残基を表し、B1は芳香族複素環を形成するのに必要な残基を表し、Lは連結基又は単なる結合手を表し、MはIr又はPtを表し、nは1又は2を表し、mは1又は2を表し、m+nは2又は3である。但し、複数の配位子が全て同じである事はない。)
(2)前記一般式(1)で表される化合物が下記一般式(2)、(3)又は(4)で表される化合物である事を特徴とする前記(1)記載の有機エレクトロルミネッセンス素子。
(In the formula, Ra represents a hydrogen atom, an aliphatic group, an aromatic group or a heterocyclic group, Rb and Rc represent a hydrogen atom or a substituent, X represents N or C , and A1 and B2 represent an aromatic ring. represents a residue necessary to form an aromatic heterocyclic ring, B1 represents a residue necessary to form a Fang aromatic heterocycle, L represents a linkage group or a single bond, M is Ir Or Pt, n represents 1 or 2, m represents 1 or 2, and m + n is 2 or 3. However, the plurality of ligands are not all the same.)
(2) The organic electroluminescence as described in (1) above, wherein the compound represented by the general formula (1) is a compound represented by the following general formula (2), (3) or (4) element.
(式中、Ra、Rb、Rcは前記一般式(1)におけるRa、Rb、Rcと各々同義であり、Rfは水素原子、脂肪族基、芳香族基、複素環基を表し、Rd、Reは水素原子又は置換基を表し、A1、B2、M、n、m、m+nは前記一般式(1)におけるA1、B2、M、n、m、m+nと各々同義である。但し、複数の配位子が全て同じである事はない。) (In the formula, Ra, Rb and Rc are respectively synonymous with Ra, Rb and Rc in the general formula (1), Rf represents a hydrogen atom, an aliphatic group, an aromatic group and a heterocyclic group; Represents a hydrogen atom or a substituent, and A 1, B 2, M, n, m, and m + n have the same meanings as A 1, B 2, M, n, m, and m + n in the general formula (1), respectively. The ranks are not all the same.)
(式中、Ra、Rb、Rcは前記一般式(1)におけるRa、Rb、Rcと各々同義であり、Rh、Ri、Rjは水素原子又は置換基を表し、A1、B2、M、n、m、m+nは前記一般式(1)におけるA1、B2、M、n、m、m+nと各々同義である。) (In the formula, Ra, Rb and Rc are respectively synonymous with Ra, Rb and Rc in the general formula (1), Rh, Ri and Rj represent a hydrogen atom or a substituent, and A1, B2, M, n, m and m + n have the same meanings as A1, B2, M, n, m and m + n in the general formula (1), respectively.
(式中、Ra、Rb、Rcは前記一般式(1)におけるRa、Rb、Rcと各々同義であり、Rl、Rnは水素原子又は置換基を表し、Rkは脂肪族基、芳香族基、複素環基を表し、A1、B2、M、n、m、m+nは前記一般式(1)におけるA1、B2、M、n、m、m+nと各々同義である。)
(3)前記一般式(1)〜(4)の何れかで表される化合物のA1がベンゼン環を形成する残基である事を特徴とする前記(1)又は(2)に記載の有機エレクトロルミネッセンス素子。
(In the formula, Ra, Rb and Rc are respectively synonymous with Ra, Rb and Rc in the general formula (1), Rl and Rn represent a hydrogen atom or a substituent, Rk represents an aliphatic group, an aromatic group, Represents a heterocyclic group, and A1, B2, M, n, m, and m + n have the same meanings as A1, B2, M, n, m, and m + n in the general formula (1).
(3) The organic as described in (1) or (2) above, wherein A1 of the compound represented by any one of the general formulas (1) to (4) is a residue that forms a benzene ring Electroluminescence element.
(4)前記一般式(1)〜(4)の何れかで表される化合物のMがIrである事を特徴とする前記(1)〜(3)の何れか1項に記載の有機エレクトロルミネッセンス素子。 (4) The organic electro of any one of (1) to (3), wherein M of the compound represented by any one of the general formulas (1) to (4) is Ir. Luminescence element.
(5)青色に発光することを特徴とする前記(1)〜(4)のいずれか1項に記載の有機エレクトロルミネッセンス素子。 (5) The organic electroluminescence device as described in any one of (1) to (4) above, which emits blue light.
(6)白色に発光することを特徴とする(1)〜(4)のいずれか1項に記載の有機エレクトロルミネッセンス素子。 (6) The organic electroluminescent element according to any one of (1) to (4), which emits white light.
(7)前記(1)〜(6)のいずれか1項に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする表示装置。 (7) A display device comprising the organic electroluminescence element according to any one of (1) to (6).
(8)前記(1)〜(6)のいずれか1項に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする照明装置。 (8) An illuminating device comprising the organic electroluminescence element according to any one of (1) to (6).
(9)前記(8)に記載の照明装置と、表示手段として液晶素子を備えたことを特徴とする表示装置。 (9) A display device comprising the illumination device according to (8) and a liquid crystal element as display means.
本発明により、発光効率が高く、長寿命の有機EL素子を形成することが可能で、それを用いた照明装置及び表示装置を提供することが出来た。 According to the present invention, an organic EL element having high luminous efficiency and a long lifetime can be formed, and an illumination device and a display device using the organic EL element can be provided.
本発明の有機EL素子は、陽極と陰極により挟まれた、少なくとも発光層を含有する有機EL素子において、前記発光層が前記一般式(1)で表される化合物の少なくとも1つを含有する事を特徴とする。 The organic EL device of the present invention is an organic EL device containing at least a light emitting layer sandwiched between an anode and a cathode, wherein the light emitting layer contains at least one compound represented by the general formula (1). It is characterized by.
前記一般式(1)において、Raが表す脂肪族基としては、例えば、メチル基、エチル基、n−プロピル基、イソプロピル基、tert−ブチル基、n−オクチル基、エイコシル基、2−クロロエチル基、2−シアノエチル基、2−エチルヘキシル基、ビニル基、アリル基等であり、芳香族基としては、例えば、フェニル基、o−トリル基、m−トリル基、p−トリル基、ナフチル基、m−クロロフェニル基、4−ジメチルアミノフェニル基、o−ヘキサデカノイルアミノフェニル基、ナフチル基等であり、複素環基としては、例えばピリジル基、チアゾリル基、オキサゾリル基、イミダゾリル基、フリル基、ピロリル基、ピラジニル基、ピリミジニル基、ピリダジニル基、セレナゾリル基、スルホラニル基、ピペリジニル基、ピラゾリル基、テトラゾリル基等を表す。 In the general formula (1), examples of the aliphatic group represented by Ra include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, a tert-butyl group, an n-octyl group, an eicosyl group, and a 2-chloroethyl group. , 2-cyanoethyl group, 2-ethylhexyl group, vinyl group, allyl group, etc., and examples of the aromatic group include phenyl group, o-tolyl group, m-tolyl group, p-tolyl group, naphthyl group, m -Chlorophenyl group, 4-dimethylaminophenyl group, o-hexadecanoylaminophenyl group, naphthyl group, etc., and examples of the heterocyclic group include pyridyl group, thiazolyl group, oxazolyl group, imidazolyl group, furyl group, pyrrolyl group , Pyrazinyl group, pyrimidinyl group, pyridazinyl group, selenazolyl group, sulfolanyl group, piperidinyl group, pyrazolyl group It represents a tetrazolyl group, and the like.
Rb、Rcで表される置換基としては、例えば、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、tert−ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、シクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基等)、アルケニル基(例えば、ビニル基、アリル基等)、アルキニル基(例えば、エチニル基、プロパルギル基等)、アリール基(例えば、フェニル基、p−クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等)、芳香族複素環(例えば、フリル基、チエニル基、ピリジル基、ピリダジル基、ピリミジル基、ピラジル基、トリアジル基、イミダゾリル基、ピラゾリル基、チアゾリル基、ベンゾイミダゾリル基、ベンゾオキサゾリル基、キナゾリル基、フタラジル基等)、複素環基(例えば、ピロリジル基、イミダゾリジル基、モルホリル基、オキサゾリジル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)、スルファモイル基(例えば、アミノスルホニル基、メチルアミノスルホニル基、ジメチルアミノスルホニル基、ブチルアミノスルホニル基、ヘキシルアミノスルホニル基、シクロヘキシルアミノスルホニル基、オクチルアミノスルホニル基、ドデシルアミノスルホニル基、フェニルアミノスルホニル基、ナフチルアミノスルホニル基、2−ピリジルアミノスルホニル基等)、アシル基(例えば、アセチル基、エチルカルボニル基、プロピルカルボニル基、ペンチルカルボニル基、シクロヘキシルカルボニル基、オクチルカルボニル基、2−エチルヘキシルカルボニル基、ドデシルカルボニル基、フェニルカルボニル基、ナフチルカルボニル基、ピリジルカルボニル基等)、アシルオキシ基(例えば、アセチルオキシ基、エチルカルボニルオキシ基、ブチルカルボニルオキシ基、オクチルカルボニルオキシ基、ドデシルカルボニルオキシ基、フェニルカルボニルオキシ基等)、アミド基(例えば、メチルカルボニルアミノ基、エチルカルボニルアミノ基、ジメチルカルボニルアミノ基、プロピルカルボニルアミノ基、ペンチルカルボニルアミノ基、シクロヘキシルカルボニルアミノ基、2−エチルヘキシルカルボニルアミノ基、オクチルカルボニルアミノ基、ドデシルカルボニルアミノ基、フェニルカルボニルアミノ基、ナフチルカルボニルアミノ基等)、カルバモイル基(例えば、アミノカルボニル基、メチルアミノカルボニル基、ジメチルアミノカルボニル基、プロピルアミノカルボニル基、ペンチルアミノカルボニル基、シクロヘキシルアミノカルボニル基、オクチルアミノカルボニル基、2−エチルヘキシルアミノカルボニル基、ドデシルアミノカルボニル基、フェニルアミノカルボニル基、ナフチルアミノカルボニル基、2−ピリジルアミノカルボニル基等)、ウレイド基(例えば、メチルウレイド基、エチルウレイド基、ペンチルウレイド基、シクロヘキシルウレイド基、オクチルウレイド基、ドデシルウレイド基、フェニルウレイド基、ナフチルウレイド基、2−ピリジルアミノウレイド基等)、スルフィニル基(例えば、メチルスルフィニル基、エチルスルフィニル基、ブチルスルフィニル基、シクロヘキシルスルフィニル基、2−エチルヘキシルスルフィニル基、ドデシルスルフィニル基、フェニルスルフィニル基、ナフチルスルフィニル基、2−ピリジルスルフィニル基等)、アルキルスルホニル基(例えば、メチルスルホニル基、エチルスルホニル基、ブチルスルホニル基、シクロヘキシルスルホニル基、2−エチルヘキシルスルホニル基、ドデシルスルホニル基等)、アリールスルホニル基(例えば、フェニルスルホニル基、ナフチルスルホニル基、2−ピリジルスルホニル基等)、アミノ基(例えば、アミノ基、エチルアミノ基、ジメチルアミノ基、ブチルアミノ基、シクロペンチルアミノ基、2−エチルヘキシルアミノ基、ドデシルアミノ基、アニリノ基、ナフチルアミノ基、2−ピリジルアミノ基等)、ハロゲン原子(例えば、フッ素原子、塩素原子、臭素原子等)、フッ化炭化水素基(例えば、フルオロメチル基、トリフルオロメチル基、ペンタフルオロエチル基、ペンタフルオロフェニル基等)、シアノ基、シリル基(例えば、トリメチルシリル基、トリイソプロピルシリル基、トリフェニルシリル基、フェニルジエチルシリル基等)等が挙げられる。これらの基は更に置換基を有していてもよい。 Examples of the substituent represented by Rb and Rc include an alkyl group (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group). , Tetradecyl group, pentadecyl group etc.), cycloalkyl group (eg cyclopentyl group, cyclohexyl group etc.), alkenyl group (eg vinyl group, allyl group etc.), alkynyl group (eg ethynyl group, propargyl group etc.), aryl Groups (for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group, etc.), Aromatic heterocycle (eg, furyl, thienyl, Lysyl group, pyridazyl group, pyrimidyl group, pyrazyl group, triazyl group, imidazolyl group, pyrazolyl group, thiazolyl group, benzoimidazolyl group, benzoxazolyl group, quinazolyl group, phthalazyl group, etc.), heterocyclic group (for example, pyrrolidyl group, Imidazolidyl group, morpholyl group, oxazolidyl group, etc.), alkoxy group (for example, methoxy group, ethoxy group, propyloxy group, pentyloxy group, hexyloxy group, octyloxy group, dodecyloxy group, etc.), cycloalkoxy group (for example, Cyclopentyloxy group, cyclohexyloxy group, etc.), aryloxy group (eg, phenoxy group, naphthyloxy group, etc.), alkylthio group (eg, methylthio group, ethylthio group, propylthio group, pentylthio group, hexylthio group, octylthio group) , Dodecylthio group etc.), cycloalkylthio group (eg cyclopentylthio group, cyclohexylthio group etc.), arylthio group (eg phenylthio group, naphthylthio group etc.), alkoxycarbonyl group (eg methyloxycarbonyl group, ethyloxycarbonyl group) Butyloxycarbonyl group, octyloxycarbonyl group, dodecyloxycarbonyl group, etc.), aryloxycarbonyl group (eg, phenyloxycarbonyl group, naphthyloxycarbonyl group, etc.), sulfamoyl group (eg, aminosulfonyl group, methylaminosulfonyl group) , Dimethylaminosulfonyl group, butylaminosulfonyl group, hexylaminosulfonyl group, cyclohexylaminosulfonyl group, octylaminosulfonyl group, dodecylaminosulfonyl group Group, phenylaminosulfonyl group, naphthylaminosulfonyl group, 2-pyridylaminosulfonyl group, etc.), acyl group (for example, acetyl group, ethylcarbonyl group, propylcarbonyl group, pentylcarbonyl group, cyclohexylcarbonyl group, octylcarbonyl group, 2- Ethylhexylcarbonyl group, dodecylcarbonyl group, phenylcarbonyl group, naphthylcarbonyl group, pyridylcarbonyl group, etc.), acyloxy group (for example, acetyloxy group, ethylcarbonyloxy group, butylcarbonyloxy group, octylcarbonyloxy group, dodecylcarbonyloxy group) , Phenylcarbonyloxy group, etc.), amide group (for example, methylcarbonylamino group, ethylcarbonylamino group, dimethylcarbonylamino group, propylcarbonylamino group) Group, pentylcarbonylamino group, cyclohexylcarbonylamino group, 2-ethylhexylcarbonylamino group, octylcarbonylamino group, dodecylcarbonylamino group, phenylcarbonylamino group, naphthylcarbonylamino group, etc.), carbamoyl group (for example, aminocarbonyl group, Methylaminocarbonyl group, dimethylaminocarbonyl group, propylaminocarbonyl group, pentylaminocarbonyl group, cyclohexylaminocarbonyl group, octylaminocarbonyl group, 2-ethylhexylaminocarbonyl group, dodecylaminocarbonyl group, phenylaminocarbonyl group, naphthylaminocarbonyl Group, 2-pyridylaminocarbonyl group, etc.), ureido group (for example, methylureido group, ethylureido group, pentylurea) Group, cyclohexylureido group, octylureido group, dodecylureido group, phenylureido group, naphthylureido group, 2-pyridylaminoureido group, etc.), sulfinyl group (for example, methylsulfinyl group, ethylsulfinyl group, butylsulfinyl group, cyclohexylsulfinyl group) 2-ethylhexylsulfinyl group, dodecylsulfinyl group, phenylsulfinyl group, naphthylsulfinyl group, 2-pyridylsulfinyl group, etc.), alkylsulfonyl group (for example, methylsulfonyl group, ethylsulfonyl group, butylsulfonyl group, cyclohexylsulfonyl group, 2 -Ethylhexylsulfonyl group, dodecylsulfonyl group, etc.), arylsulfonyl group (for example, phenylsulfonyl group, naphthylsulfonyl group, 2-pyridyls) Sulfonyl group, etc.), amino group (for example, amino group, ethylamino group, dimethylamino group, butylamino group, cyclopentylamino group, 2-ethylhexylamino group, dodecylamino group, anilino group, naphthylamino group, 2-pyridylamino group) Etc.), halogen atoms (eg fluorine atom, chlorine atom, bromine atom etc.), fluorinated hydrocarbon groups (eg fluoromethyl group, trifluoromethyl group, pentafluoroethyl group, pentafluorophenyl group etc.), cyano group And silyl groups (for example, trimethylsilyl group, triisopropylsilyl group, triphenylsilyl group, phenyldiethylsilyl group, etc.). These groups may further have a substituent.
A1、B2は各々芳香族環、芳香族複素環を形成するのに必要な残基を表し、A1、B2により形成される芳香族環としては、例えば、ベンゼン環、ナフタレン環等であり、A1、B2により形成される芳香族複素環としては、例えば、フラン環、チオフェン環、ピリジン環、ピリダジン環、ピリミジン環、ピラゾール環、トリアジン環、イミダゾール環、ピラゾール環、チアゾール環、ベンゾイミダゾール環、ベンゾオキサゾール環、キナゾール環、フタラジン環等が挙げられる。これらの基は更にRbで挙げた置換基により置換されてもよい。A1により形成される芳香族環としては、ベンゼン環であることが好ましい。 A1 and B2 each represent a residue necessary for forming an aromatic ring or an aromatic heterocycle, and examples of the aromatic ring formed by A1 and B2 include a benzene ring and a naphthalene ring. As the aromatic heterocycle formed by B2, for example, furan ring, thiophene ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazole ring, triazine ring, imidazole ring, pyrazole ring, thiazole ring, benzimidazole ring, benzo An oxazole ring, a quinazole ring, a phthalazine ring, etc. are mentioned. These groups may be further substituted with the substituents exemplified for Rb. The aromatic ring formed by A1 is preferably a benzene ring.
B1は芳香族複素環を形成するのに必要な残基を表し、B1により形成される芳香族複素環としては、例えば、フラン環、チオフェン環、ピリジン環、ピリダジン環、ピリミジン環、ピラゾール環、トリアジン環、イミダゾール環、ピラゾール環、チアゾール環、ベンゾイミダゾール環、ベンゾオキサゾール環、キナゾール環、フタラジン環等が挙げられる。 B1 represents a residue necessary for forming an aromatic heterocycle, and examples of the aromatic heterocycle formed by B1 include a furan ring, a thiophene ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazole ring, Examples thereof include a triazine ring, an imidazole ring, a pyrazole ring, a thiazole ring, a benzimidazole ring, a benzoxazole ring, a quinazole ring, and a phthalazine ring.
Lが表す連結基としては、例えば、アルキレン基、アリーレン基、等を挙げることができる。これらの基は更にRbで挙げた置換基により置換されていてもよい。 Examples of the linking group represented by L include an alkylene group and an arylene group. These groups may be further substituted with the substituents exemplified for Rb.
MはIr又はPtを表し、好ましくはIrである。 M represents Ir or Pt, preferably Ir.
前記一般式(1)で表される化合物が前記一般式(2)、(3)又は(4)で表される化合物であることが好ましい。 It is preferable that the compound represented by the general formula (1) is a compound represented by the general formula (2), (3), or (4).
前記一般式(2)、(3)又は(4)におけるRa、Rb、Rc、A1、B2、M、n、m、m+nは前記一般式(1)におけるA1、B2、M、n、m、m+nと各々同義である。 Ra, Rb, Rc, A1, B2, M, n, m, m + n in the general formula (2), (3) or (4) are A1, B2, M, n, m in the general formula (1). Each is synonymous with m + n.
Rd、Re、Rf、Rh、Ri、Rj、Rk、Rl、Rnで表される置換基としては、Rbで挙げた置換基等を挙げることができる。 Examples of the substituent represented by Rd, Re, Rf, Rh, Ri, Rj, Rk, Rl, and Rn include the substituents exemplified for Rb.
下記に本発明に係る前記一般式(1)〜(4)で表される化合物を具体的に示すが本発明はこれらに限定されるものではない。 The compounds represented by the general formulas (1) to (4) according to the present invention are specifically shown below, but the present invention is not limited thereto.
中心金属Mに配位するリガンド(配位子)の具体例を下記に示す。 Specific examples of the ligand (ligand) coordinated to the central metal M are shown below.
上記リガンドと中心金属により形成された具体的化合物例を下記に示す。 Specific examples of compounds formed by the ligand and the central metal are shown below.
尚、化合物は(La)nM(Lb)mとして表し、表中、La、n、Lb、m、Mで示した。 In addition, a compound is represented as (La) n M (Lb) m and is represented by La, n, Lb, m, and M in the table.
次に、本発明の有機EL素子の発光層に用いられるホスト化合物として有用なアザカルバゾール誘導体について、以下に具体例を挙げる。しかし、本発明はこれらに限定されるものではない。 Next, specific examples of the azacarbazole derivative useful as a host compound used in the light emitting layer of the organic EL device of the present invention are given below. However, the present invention is not limited to these.
また、以下に本発明の有機EL素子のホスト化合物として有用なカルバゾール誘導体、について、具体例を挙げる。しかし、本発明はこれらに限定されるものではない。 Specific examples of the carbazole derivative useful as a host compound for the organic EL device of the present invention are given below. However, the present invention is not limited to these.
本発明の有機EL素子の構成層について説明する。本発明において、有機EL素子の層構成の好ましい具体例を以下に示すが、本発明はこれらに限定されない。 The constituent layers of the organic EL element of the present invention will be described. In this invention, although the preferable specific example of the layer structure of an organic EL element is shown below, this invention is not limited to these.
(i)陽極/発光層/電子輸送層/陰極
(ii)陽極/正孔輸送層/発光層/電子輸送層/陰極
(iii)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極
(iv)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
(v)陽極/陽極バッファー層/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
本発明の有機EL素子においては、青色発光層の発光極大波長は430〜480nmにあるものが好ましいく、緑色発光層は発光極大波長が510〜550nm、赤色発光層は発光極大波長が600〜640nmの範囲にある単色発光層であることが好ましく、これらを用いた表示装置であることが好ましい。また、これらの少なくとも3層の発光層を積層して白色発光層としたものであってもよい。更に発光層間には非発光性の中間層を有していてもよい。本発明の有機EL素子としては、白色発光層であることが好ましく、これらを用いた照明装置であることが好ましい。
(I) Anode / light emitting layer / electron transport layer / cathode (ii) Anode / hole transport layer / light emitting layer / electron transport layer / cathode (iii) Anode / hole transport layer / light emitting layer / hole blocking layer / electron Transport layer / cathode (iv) Anode / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer / cathode (v) Anode / anode buffer layer / hole transport layer / light emitting layer / hole Blocking layer / electron transport layer / cathode buffer layer / cathode In the organic EL device of the present invention, the blue light emitting layer preferably has an emission maximum wavelength of 430 to 480 nm, and the green light emitting layer has an emission maximum wavelength of 510 to 550 nm. The red light emitting layer is preferably a monochromatic light emitting layer having a light emission maximum wavelength in the range of 600 to 640 nm, and is preferably a display device using these. Alternatively, a white light emitting layer may be formed by laminating at least three light emitting layers. Further, a non-light emitting intermediate layer may be provided between the light emitting layers. The organic EL element of the present invention is preferably a white light emitting layer, and is preferably a lighting device using these.
本発明の有機EL素子を構成する各層について説明する。 Each layer which comprises the organic EL element of this invention is demonstrated.
《陽極》
有機EL素子における陽極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としてはAu等の金属、CuI、インジウムチンオキシド(ITO)、SnO2、ZnO等の導電性透明材料が挙げられる。また、IDIXO(In2O3−ZnO)等非晶質で透明導電膜を作製可能な材料を用いてもよい。陽極はこれらの電極物質を蒸着やスパッタリング等の方法により、薄膜を形成させ、フォトリソグラフィー法で所望の形状のパターンを形成してもよく、あるいはパターン精度をあまり必要としない場合は(100μm以上程度)、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。あるいは、有機導電性化合物のように塗布可能な物質を用いる場合には、印刷方式、コーティング方式など湿式製膜法を用いることもできる。この陽極より発光を取り出す場合には、透過率を10%より大きくすることが望ましく、また陽極としてのシート抵抗は数百Ω/□以下が好ましい。更に膜厚は材料にもよるが、通常10〜1000nm、好ましくは10〜200nmの範囲で選ばれる。
"anode"
As the anode in the organic EL element, an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used. Specific examples of such electrode materials include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO 2 and ZnO. Alternatively, an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used. For the anode, these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a pattern having a desired shape may be formed by a photolithography method. ), A pattern may be formed through a mask having a desired shape when the electrode material is deposited or sputtered. Or when using the substance which can be apply | coated like an organic electroconductivity compound, wet film forming methods, such as a printing system and a coating system, can also be used. When light emission is extracted from the anode, it is desirable that the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred Ω / □ or less. Further, although the film thickness depends on the material, it is usually selected in the range of 10 to 1000 nm, preferably 10 to 200 nm.
《陰極》
一方、陰極としては、仕事関数の小さい(4eV以下)金属(電子注入性金属と称する)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム−カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。陰極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させることにより、作製することができる。また、陰極としてのシート抵抗は数百Ω/□以下が好ましく、膜厚は通常10nm〜5μm、好ましくは50〜200nmの範囲で選ばれる。なお、発光した光を透過させるため、有機EL素子の陽極または陰極のいずれか一方が、透明または半透明であれば発光輝度が向上し好都合である。
"cathode"
On the other hand, as the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like. Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Suitable are a magnesium / aluminum mixture, a magnesium / indium mixture, an aluminum / aluminum oxide (Al 2 O 3 ) mixture, a lithium / aluminum mixture, aluminum and the like. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance as the cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 to 200 nm. In order to transmit the emitted light, if either one of the anode or the cathode of the organic EL element is transparent or translucent, the emission luminance is advantageously improved.
また、陰極に上記金属を1〜20nmの膜厚で作製した後に、陽極の説明で挙げた導電性透明材料をその上に作製することで、透明または半透明の陰極を作製することができ、これを応用することで陽極と陰極の両方が透過性を有する素子を作製することができる。 Moreover, after producing the said metal with a film thickness of 1-20 nm on a cathode, a transparent or semi-transparent cathode can be produced by producing the electroconductive transparent material quoted by description of the anode on it, By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.
次に、本発明の有機EL素子の構成層として用いられる、注入層、阻止層、電子輸送層等について説明する。 Next, an injection layer, a blocking layer, an electron transport layer and the like used as the constituent layers of the organic EL element of the present invention will be described.
《注入層:電子注入層、正孔注入層》
注入層は必要に応じて設け、電子注入層と正孔注入層があり、上記の如く陽極と発光層または正孔輸送層の間、及び陰極と発光層または電子輸送層との間に存在させてもよい。
<< Injection layer: electron injection layer, hole injection layer >>
The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, it exists between the anode and the light emitting layer or the hole transport layer and between the cathode and the light emitting layer or the electron transport layer. May be.
注入層とは、駆動電圧低下や発光輝度向上のために電極と有機層間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123〜166頁)に詳細に記載されており、正孔注入層(陽極バッファー層)と電子注入層(陰極バッファー層)とがある。 An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance. “Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) 2), Chapter 2, “Electrode Materials” (pages 123 to 166) in detail, and includes a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
陽極バッファー層(正孔注入層)は、特開平9−45479号公報、同9−260062号公報、同8−288069号公報等にもその詳細が記載されており、具体例として、銅フタロシアニンに代表されるフタロシアニンバッファー層、酸化バナジウムに代表される酸化物バッファー層、アモルファスカーボンバッファー層、ポリアニリン(エメラルディン)やポリチオフェン等の導電性高分子を用いた高分子バッファー層等が挙げられる。 The details of the anode buffer layer (hole injection layer) are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069 and the like. As a specific example, copper phthalocyanine is used. Examples thereof include a phthalocyanine buffer layer represented by an oxide, an oxide buffer layer represented by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
陰極バッファー層(電子注入層)は、特開平6−325871号公報、同9−17574号公報、同10−74586号公報等にもその詳細が記載されており、具体的にはストロンチウムやアルミニウム等に代表される金属バッファー層、フッ化リチウムに代表されるアルカリ金属化合物バッファー層、フッ化マグネシウムに代表されるアルカリ土類金属化合物バッファー層、酸化アルミニウムに代表される酸化物バッファー層等が挙げられる。上記バッファー層(注入層)はごく薄い膜であることが望ましく、素材にもよるがその膜厚は0.1nm〜5μmの範囲が好ましい。 The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc. Metal buffer layer typified by lithium, alkali metal compound buffer layer typified by lithium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride, oxide buffer layer typified by aluminum oxide, etc. . The buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 μm although it depends on the material.
《阻止層:正孔阻止層、電子阻止層》
阻止層は、上記の如く、有機化合物薄膜の基本構成層の他に必要に応じて設けられるものである。例えば、特開平11−204258号公報、同11−204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。
<Blocking layer: hole blocking layer, electron blocking layer>
As described above, the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film. For example, it is described in JP-A Nos. 11-204258, 11-204359, and “Organic EL elements and their forefront of industrialization” (issued by NTT, Inc. on November 30, 1998). There is a hole blocking (hole blocking) layer.
正孔阻止層とは広い意味では電子輸送層の機能を有し、電子を輸送する機能を有しつつ正孔を輸送する能力が著しく小さい正孔阻止材料からなり、電子を輸送しつつ正孔を阻止することで電子と正孔の再結合確率を向上させることができる。また、後述する電子輸送層の構成を必要に応じて、本発明に係わる正孔阻止層として用いることができる。 The hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking. Moreover, the structure of the electron carrying layer mentioned later can be used as a hole-blocking layer concerning this invention as needed.
本発明の有機EL素子の正孔阻止層は、発光層に隣接して設けられていることが好ましい。 The hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
正孔阻止層には、前述のホスト化合物として挙げたアザカルバゾール誘導体を含有することが好ましい。 The hole blocking layer preferably contains the azacarbazole derivative mentioned as the host compound.
また、本発明においては、複数の発光色の異なる複数の発光層を有する場合、その発光極大波長が最も短波にある発光層が、全発光層中、最も陽極に近いことが好ましいが、このような場合、該最短波層と、該層の次に陽極に近い発光層との間に正孔阻止層を追加して設けることが好ましい。更には、該位置に設けられる正孔阻止層に含有される化合物の50質量%以上が、前記最短波発光層のホスト化合物に対し、そのイオン化ポテンシャルが0.3eV以上大きいことが好ましい。 In the present invention, when a plurality of light emitting layers having different light emission colors are provided, the light emitting layer having the shortest wavelength of light emission is preferably closest to the anode among all the light emitting layers. In this case, it is preferable to additionally provide a hole blocking layer between the shortest wave layer and the light emitting layer next to the anode next to the layer. Furthermore, it is preferable that 50% by mass or more of the compound contained in the hole blocking layer provided at the position has an ionization potential of 0.3 eV or more higher than the host compound of the shortest wave emitting layer.
イオン化ポテンシャルは化合物のHOMO(最高被占分子軌道)レベルにある電子を真空準位に放出するのに必要なエネルギーで定義され、例えば下記に示すような方法により求めることができる。 The ionization potential is defined by the energy required to emit an electron at the HOMO (highest occupied molecular orbital) level of the compound to the vacuum level, and can be obtained by the following method, for example.
(1)米国Gaussian社製の分子軌道計算用ソフトウェアであるGaussian98(Gaussian98、Revision A.11.4,M.J.Frisch,et al,Gaussian,Inc.,Pittsburgh PA,2002.)を用い、キーワードとしてB3LYP/6−31G*を用いて構造最適化を行うことにより算出した値(eV単位換算値)の小数点第2位を四捨五入した値としてイオン化ポテンシャルを求めることができる。この計算値が有効な背景には、この手法で求めた計算値と実験値の相関が高いためである。 (1) Keywords using Gaussian 98 (Gaussian 98, Revision A.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.), which is molecular orbital calculation software manufactured by Gaussian, USA. The ionization potential can be obtained as a value obtained by rounding off the second decimal place of the value (eV unit converted value) calculated by performing structural optimization using B3LYP / 6-31G *. This calculation value is effective because the correlation between the calculation value obtained by this method and the experimental value is high.
(2)イオン化ポテンシャルは光電子分光法で直接測定する方法により求めることもできる。例えば、理研計器社製の低エネルギー電子分光装置「Model AC−1」を用いて、あるいは紫外光電子分光として知られている方法を好適に用いることができる。 (2) The ionization potential can also be obtained by a method of directly measuring by photoelectron spectroscopy. For example, a method known as ultraviolet photoelectron spectroscopy can be suitably used by using a low energy electron spectrometer “Model AC-1” manufactured by Riken Keiki Co., Ltd.
一方、電子阻止層とは広い意味では正孔輸送層の機能を有し、正孔を輸送する機能を有しつつ電子を輸送する能力が著しく小さい材料からなり、正孔を輸送しつつ電子を阻止することで電子と正孔の再結合確率を向上させることができる。また、後述する正孔輸送層の構成を必要に応じて電子阻止層として用いることができる。本発明に係わる正孔阻止層、電子輸送層の膜厚としては好ましくは3nm〜100nmであり、更に好ましくは5nm〜30nmである。 On the other hand, the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved. Moreover, the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed. The film thickness of the hole blocking layer and the electron transport layer according to the present invention is preferably 3 nm to 100 nm, and more preferably 5 nm to 30 nm.
《発光層》
本発明に係る発光層は、電極または電子輸送層、正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層であり、発光する部分は発光層の層内であっても発光層と隣接層との界面であってもよい。
<Light emitting layer>
The light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
本発明の有機EL素子の発光層には、ホスト化合物と本発明に係る前記一般式(1)〜(4)で表される化合物を含有する。本発明においては、ホスト化合物として前述した化合物を用いることが好ましいが、公知のホスト化合物であってもよく、また併用しても良い。 The light emitting layer of the organic EL device of the present invention contains a host compound and the compounds represented by the general formulas (1) to (4) according to the present invention. In the present invention, the above-described compounds are preferably used as the host compound, but may be known host compounds or may be used in combination.
ここで、本発明においてホスト化合物とは、発光層に含有される化合物の内で、その層中での質量比が20%以上であり、かつ室温(25℃)においてリン光発光のリン光量子収率が、0.1未満の化合物と定義される。好ましくはリン光量子収率が0.01未満である。 Here, in the present invention, the host compound is a compound contained in the light emitting layer, the mass ratio in the layer is 20% or more, and phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C.). A rate is defined as a compound of less than 0.1. The phosphorescence quantum yield is preferably less than 0.01.
更に公知のホスト化合物を複数種併用して用いてもよい。ホスト化合物を複数種用いることで、電荷の移動を調整することが可能であり、有機EL素子を高効率化することができる。また、本発明の前記一般式(1)〜(4)で表される化合物を複数種用いることで、異なる発光を混ぜることが可能となり、これにより任意の発光色を得ることができる。発光性金属錯体の種類、ドープ量を調整することで白色発光が可能であり、照明、バックライトへの応用もできる。 Further, a plurality of known host compounds may be used in combination. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. In addition, by using a plurality of compounds represented by the general formulas (1) to (4) of the present invention, it is possible to mix different luminescence, and thereby any luminescent color can be obtained. White light emission is possible by adjusting the kind of the luminescent metal complex and the doping amount, and it can be applied to illumination and backlight.
併用してもよい公知のホスト化合物としては、正孔輸送能、電子輸送能を有しつつ、且つ発光の長波長化を防ぎ、なお且つ高Tg(ガラス転移温度)である化合物が好ましい。 As a known host compound that may be used in combination, a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from being increased in wavelength, and has a high Tg (glass transition temperature) is preferable.
公知のホスト化合物の具体例としては、以下の文献に記載されている化合物が挙げられる。 Specific examples of known host compounds include compounds described in the following documents.
特開2001−257076号公報、同2002−308855号公報、同2001−313179号公報、同2002−319491号公報、同2001−357977号公報、同2002−334786号公報、同2002−8860号公報、同2002−334787号公報、同2002−15871号公報、同2002−334788号公報、同2002−43056号公報、同2002−334789号公報、同2002−75645号公報、同2002−338579号公報、同2002−105445号公報、同2002−343568号公報、同2002−141173号公報、同2002−352957号公報、同2002−203683号公報、同2002−363227号公報、同2002−231453号公報、同2003−3165号公報、同2002−234888号公報、同2003−27048号公報、同2002−255934号公報、同2002−260861号公報、同2002−280183号公報、同2002−299060号公報、同2002−302516号公報、同2002−305083号公報、同2002−305084号公報、同2002−308837号公報等。 JP-A-2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579, 2002-105445 gazette, 2002-343568 gazette, 2002-141173 gazette, 2002-352957 gazette, 2002-203683 gazette, 2002-363227 gazette, 2002-231453 gazette, No. 003-3165, No. 2002-234888, No. 2003-27048, No. 2002-255934, No. 2002-286061, No. 2002-280183, No. 2002-299060, No. 2002. -302516, 2002-305083, 2002-305084, 2002-308837, and the like.
本発明においては、複数の発光層を有する場合、これら各層のホスト化合物の50質量%以上が同一の化合物であることが、有機層全体に渡って均質な膜性状を得やすいことから好ましく、更には該化合物の燐光発光エネルギーが2.9eV以上であることが、ドーパントからのエネルギー移動を効率的に抑制し、高輝度を得る上で有利となることからより好ましい。 In the present invention, in the case of having a plurality of light emitting layers, it is preferable that 50% by mass or more of the host compound in each layer is the same compound because it is easy to obtain a uniform film property over the entire organic layer. It is more preferable that the phosphorescence emission energy of the compound is 2.9 eV or more because it is advantageous in efficiently suppressing energy transfer from the dopant and obtaining high luminance.
本発明でいうところの燐光発光エネルギーとは、ホスト化合物を基板上に100nmの蒸着膜のフォトルミネッセンスを測定し、その燐光発光の0−0バンドのピークエネルギーを言う。 The phosphorescence emission energy as used in the field of this invention means the peak energy of the 0-0 band of the phosphorescence emission which measures the photoluminescence of a 100 nm vapor deposition film | membrane on a board | substrate with a host compound.
本発明において用いるホスト化合物は、燐光発光エネルギーが2.9eV以上かつTgが90℃以上のものであることが好ましい。Tgが90℃より低いと素子の経時での劣化(輝度低下、膜性状の劣化)が大きく、光源としての市場ニーズを満足し得ない。即ち、輝度と耐久性の両方を満足するためには、燐光発光エネルギーが2.9eV以上かつTgが90℃以上のものであることが好ましい。Tgは、更に好ましくは100℃以上である。 The host compound used in the present invention preferably has a phosphorescence energy of 2.9 eV or more and a Tg of 90 ° C. or more. If the Tg is lower than 90 ° C., the deterioration of the element over time (decrease in luminance, deterioration of film properties) is large and the market needs as a light source cannot be satisfied. That is, in order to satisfy both luminance and durability, it is preferable that phosphorescence emission energy is 2.9 eV or more and Tg is 90 ° C. or more. Tg is more preferably 100 ° C. or higher.
本発明においては、複数の発光層を有する場合、発光層のホスト化合物の50質量%以上が、燐光発光エネルギーが2.9eV以上かつTgが90℃以上のものである同一の化合物であることが好ましい。驚くべきことにTgが90℃以上で、個々には耐久性に優れた材料でも、発光層ごとに別の化合物を用いた場合には素子全体の保存特性が、全発光層に同じ化合物を用いた場合と比較し、劣化する場合があることが見出された。この原因については、明確には判っていないが、全発光層のホスト化合物の50質量%以上が同一、即ち実質的に全発光層のホスト化合物が同一の場合には、均一の膜面性状が得られやすが、発光層ごと別の化合物を用いた場合には、個々の化合物は安定でも、層界面等で不均一性が発生しやすいことがこの原因とも考えられる。 In the present invention, in the case of having a plurality of light emitting layers, 50% by mass or more of the host compound of the light emitting layer is the same compound having a phosphorescence emission energy of 2.9 eV or more and Tg of 90 ° C. or more. preferable. Surprisingly, even if the Tg is 90 ° C or higher and the material is individually excellent in durability, when a different compound is used for each light emitting layer, the same compound is used for all the light emitting layers in terms of the storage characteristics of the entire device. It was found that there was a case where it deteriorated compared with the case where it was. Although the cause of this is not clearly understood, when 50% by mass or more of the host compounds in all the light emitting layers are the same, that is, when the host compounds in all the light emitting layers are substantially the same, uniform film surface properties are obtained. Although it is easy to obtain, when a different compound is used for each light emitting layer, each compound is stable, but non-uniformity is likely to occur at the layer interface or the like.
(本発明の金属錯体化合物)
発光層に使用される材料(以下、発光材料という)としては、上記のホスト化合物を含有すると同時に、本発明の前記一般式(1)〜(4)で表される化合物を含有する。
(Metal complex compound of the present invention)
The material used for the light emitting layer (hereinafter referred to as the light emitting material) contains the above-mentioned host compound and at the same time the compounds represented by the general formulas (1) to (4) of the present invention.
本発明の金属錯体化合物は、励起三重項からの発光が観測される化合物であり、室温(25℃)にてリン光発光する化合物であり、リン光量子収率が、25℃において0.01以上の化合物である。リン光量子収率は好ましくは0.1以上である。上記リン光量子収率は、第4版実験化学講座7の分光IIの398頁(1992年版、丸善)に記載の方法により測定できる。溶液中でのリン光量子収率は種々の溶媒を用いて測定できるが、本発明に用いられるリン光性化合物は、任意の溶媒のいずれかにおいて上記リン光量子収率が達成されればよい。 The metal complex compound of the present invention is a compound in which light emission from an excited triplet is observed, is a compound that emits phosphorescence at room temperature (25 ° C.), and has a phosphorescence quantum yield of 0.01 or more at 25 ° C. It is a compound of this. The phosphorescence quantum yield is preferably 0.1 or more. The phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence quantum yield used in the present invention only needs to achieve the above phosphorescence quantum yield in any solvent.
リン光性発光性錯体の発光は原理としては2種挙げられ、一つはキャリアが輸送されるホスト化合物上でキャリアの再結合が起こってホスト化合物の励起状態が生成し、このエネルギーをリン光性発光性錯体に移動させることでリン光性発光性錯体からの発光を得るというエネルギー移動型、もう一つはリン光性発光性錯体がキャリアトラップとなり、リン光性発光性錯体上でキャリアの再結合が起こりリン光性発光性錯体からの発光が得られるというキャリアトラップ型であるが、いずれの場合においても、リン光性発光性錯体の励起状態のエネルギーはホスト化合物の励起状態のエネルギーよりも低いことが条件である。 There are two types of light emission of the phosphorescent light emitting complex in principle. One is the recombination of the carrier on the host compound to which the carrier is transported to generate an excited state of the host compound, and this energy is phosphorescent. The energy transfer type is to obtain light emission from the phosphorescent luminescent complex by transferring to the phosphorescent luminescent complex, and the other is the carrier trap of the phosphorescent luminescent complex. It is a carrier trap type in which recombination occurs and light emission from the phosphorescent luminescent complex is obtained. In either case, the excited state energy of the phosphorescent luminescent complex is greater than the excited state energy of the host compound. The condition is also low.
本発明の前記一般式(1)〜(4)で表される化合物に加えて、元素の周期表で8族〜10族の金属を含有する錯体系化合物、好ましくはイリジウム化合物、オスミウム化合物、または希土類錯体を併用しても良い。 In addition to the compounds represented by the general formulas (1) to (4) of the present invention, a complex compound containing a group 8-10 metal in the periodic table of elements, preferably an iridium compound, an osmium compound, or A rare earth complex may be used in combination.
これらの化合物は、例えば、Inorg.Chem.40巻、1704〜1711に記載の方法等により合成できる。 These compounds are described, for example, in Inorg. Chem. 40, 1704-1711, and the like.
本発明においては、リン光性発光性錯体のリン光発光極大波長としては特に制限されるものではなく、原理的には中心金属、配位子、配位子の置換基等を選択することで得られる発光波長を変化させることができる。 In the present invention, the phosphorescent light emission maximum wavelength of the phosphorescent light emitting complex is not particularly limited, and in principle, by selecting a central metal, a ligand, a ligand substituent, and the like. The emission wavelength obtained can be changed.
本発明の有機EL素子や本発明に係る化合物の発光する色は、「新編色彩科学ハンドブック」(日本色彩学会編、東京大学出版会、1985)の108頁の図4.16において、分光放射輝度計CS−1000(コニカミノルタセンシング社製)で測定した結果をCIE色度座標に当てはめたときの色で決定される。 The light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 4.16 on page 108 of “New Color Science Handbook” (edited by the Japan Color Society, University of Tokyo Press, 1985). It is determined by the color when the result measured with the total CS-1000 (manufactured by Konica Minolta Sensing) is applied to the CIE chromaticity coordinates.
本発明でいうところの白色素子とは、2℃視野角正面輝度を上記方法により測定した際に、1000Cd/m2でのCIE1931表色系における色度がX=0.33±0.07、Y=0.33±0.07の領域内にあることをいう。 The white element referred to in the present invention means that when the front luminance at 2 ° C. viewing angle is measured by the above method, the chromaticity in the CIE 1931 color system at 1000 Cd / m 2 is X = 0.33 ± 0.07, It is in the region of Y = 0.33 ± 0.07.
発光層は上記化合物を、例えば、真空蒸着法、スピンコート法、キャスト法、LB法、インクジェット法等の公知の薄膜化法により製膜して形成することができる。 The light emitting layer can be formed by forming the above compound by a known thinning method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink jet method.
本発明においては、発光層は発光極大波長が各々430〜480nm、510〜550nm、600〜640nmの範囲にある発光スペクトルの異なる層、或いはこれらが積層された層を含む。 In the present invention, the light emitting layer includes layers having different emission spectra in which the emission maximum wavelengths are in the range of 430 to 480 nm, 510 to 550 nm, and 600 to 640 nm, or a layer in which these are laminated.
発光層の積層順としては、特に制限はなく、また各発光層間に非発光性の中間層を有していてもよい。本発明においては、少なくとも一つの青発光層が、全発光層中最も陽極に近い位置に設けられていることが好ましい。 There is no restriction | limiting in particular as a lamination order of a light emitting layer, You may have a nonluminous intermediate | middle layer between each light emitting layer. In the present invention, it is preferable that at least one blue light emitting layer is provided at a position closest to the anode in all the light emitting layers.
また、発光層を4層以上設ける場合には、陽極に近い順から、例えば青/緑/赤/青、青/緑/赤/青/緑、青/緑/赤/青/緑/赤のように青、緑、赤を順に積層することが、輝度安定性を高める上で好ましい。 When four or more light-emitting layers are provided, for example, blue / green / red / blue, blue / green / red / blue / green, blue / green / red / blue / green / red from the order close to the anode. In order to improve luminance stability, it is preferable to sequentially stack blue, green, and red.
発光層の膜厚の総和は特に制限はないが、通常2nm〜5μm、好ましくは2〜200nmの範囲で選ばれる。本発明においては、更に10〜20nmの範囲にあるのが好ましい。薄すぎると膜の均質性が得られにくい。またこれより厚いと発光を得るのに高電圧を要するため好ましくない。膜厚を20nm以下にすると電圧面のみならず、駆動電流に対する発光色の安定性が向上する効果があり好ましい。 The total film thickness of the light emitting layer is not particularly limited, but is usually 2 nm to 5 μm, preferably 2 to 200 nm. In the present invention, it is preferably in the range of 10 to 20 nm. If it is too thin, it is difficult to obtain film uniformity. If it is thicker than this, a high voltage is required to obtain light emission, which is not preferable. A film thickness of 20 nm or less is preferable because it has the effect of improving the stability of the emission color with respect to the driving current as well as the voltage surface.
個々の発光層の膜厚は、好ましくは2〜100nmの範囲で選ばれ、2〜20nmの範囲にあるのが更に好ましい。青、緑、赤の各発光層の膜厚の関係については、特に制限はないが、3発光層中、青発光層(複数層ある場合はその総和)が最も厚いことが好ましい。 The film thickness of each light emitting layer is preferably selected in the range of 2 to 100 nm, and more preferably in the range of 2 to 20 nm. Although there is no restriction | limiting in particular about the film thickness relationship of each light emitting layer of blue, green, and red, It is preferable that the blue light emitting layer (the sum total when there are two or more layers) is the thickest among three light emitting layers.
また、前記の極大波長を維持する範囲において、各発光層には複数の発光性化合物を混合してもよい。例えば、青発光層に、極大波長430〜480nmの青発光性化合物と、同510〜550nmの緑発光性化合物を混合して用いてもよい。 Moreover, in the range which maintains the said maximum wavelength, you may mix a several luminescent compound in each light emitting layer. For example, the blue light emitting layer may be used by mixing a blue light emitting compound having a maximum wavelength of 430 to 480 nm and a green light emitting compound having the same wavelength of 510 to 550 nm.
《正孔輸送層》
正孔輸送層とは正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層、電子阻止層も正孔輸送層に含まれる。正孔輸送層は単層または複数層設けることができる。
《Hole transport layer》
The hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers.
正孔輸送材料としては、正孔の注入または輸送、電子の障壁性のいずれかを有するものであり、有機物、無機物のいずれであってもよい。例えば、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体及びピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体、アニリン系共重合体、また導電性高分子オリゴマー、特にチオフェンオリゴマー等が挙げられる。 The hole transport material has any one of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
正孔輸送材料としては上記のものを使用することができるが、ポルフィリン化合物、芳香族第3級アミン化合物及びスチリルアミン化合物、特に芳香族第3級アミン化合物を用いることが好ましい。 The above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
芳香族第3級アミン化合物及びスチリルアミン化合物の代表例としては、N,N,N′,N′−テトラフェニル−4,4′−ジアミノフェニル;N,N′−ジフェニル−N,N′−ビス(3−メチルフェニル)−〔1,1′−ビフェニル〕−4,4′−ジアミン(TPD);2,2−ビス(4−ジ−p−トリルアミノフェニル)プロパン;1,1−ビス(4−ジ−p−トリルアミノフェニル)シクロヘキサン;N,N,N′,N′−テトラ−p−トリル−4,4′−ジアミノビフェニル;1,1−ビス(4−ジ−p−トリルアミノフェニル)−4−フェニルシクロヘキサン;ビス(4−ジメチルアミノ−2−メチルフェニル)フェニルメタン;ビス(4−ジ−p−トリルアミノフェニル)フェニルメタン;N,N′−ジフェニル−N,N′−ジ(4−メトキシフェニル)−4,4′−ジアミノビフェニル;N,N,N′,N′−テトラフェニル−4,4′−ジアミノジフェニルエーテル;4,4′−ビス(ジフェニルアミノ)クオードリフェニル;N,N,N−トリ(p−トリル)アミン;4−(ジ−p−トリルアミノ)−4′−〔4−(ジ−p−トリルアミノ)スチリル〕スチルベン;4−N,N−ジフェニルアミノ−(2−ジフェニルビニル)ベンゼン;3−メトキシ−4′−N,N−ジフェニルアミノスチルベンゼン;N−フェニルカルバゾール、更には米国特許第5,061,569号明細書に記載されている2個の縮合芳香族環を分子内に有するもの、例えば、4,4′−ビス〔N−(1−ナフチル)−N−フェニルアミノ〕ビフェニル(NPD)、特開平4−308688号公報に記載されているトリフェニルアミンユニットが3つスターバースト型に連結された4,4′,4″−トリス〔N−(3−メチルフェニル)−N−フェニルアミノ〕トリフェニルアミン(MTDA
TA)等が挙げられる。
Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ', N'-tetraphenyl-4,4'-diaminophenyl; N, N'-diphenyl-N, N'- Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' − (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl; N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino- (2-diphenylvinyl) benzene; 3-methoxy-4′-N, N-diphenylaminostilbenzene; N-phenylcarbazole, and also two of those described in US Pat. No. 5,061,569. Having a condensed aromatic ring in the molecule, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-3086 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 8 are linked in a starburst type ( MTDA
TA) and the like.
更にこれらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。また、p型−Si、p型−SiC等の無機化合物も正孔注入材料、正孔輸送材料として使用することができる。 Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used. In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
また、特開平11−251067号公報、J.Huang et.al.著文献(Applied Physics Letters 80(2002),p.139)に記載されているような所謂p型正孔輸送材料を用いることもできる。本発明においては、より高効率の発光素子が得られることから、これらの材料を用いることが好ましい。 JP-A-11-251067, J. Org. Huang et. al. It is also possible to use so-called p-type hole transport materials as described in the literature (Applied Physics Letters 80 (2002), p. 139). In the present invention, it is preferable to use these materials because a light-emitting element with higher efficiency can be obtained.
正孔輸送層は上記正孔輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができる。正孔輸送層の膜厚については特に制限はないが、通常は5nm〜5μm程度、好ましくは5〜200nmである。この正孔輸送層は上記材料の1種または2種以上からなる一層構造であってもよい。 The hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can. Although there is no restriction | limiting in particular about the film thickness of a positive hole transport layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5-200 nm. The hole transport layer may have a single layer structure composed of one or more of the above materials.
また、不純物をドープしたp性の高い正孔輸送層を用いることもできる。その例としては、特開平4−297076号、特開2000−196140号、特開2001−102175号、J.Appl.Phys.,95,5773(2004)などに記載されたものが挙げられる。 Alternatively, a hole transport layer having a high p property doped with impurities can be used. Examples thereof include JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
本発明においては、このようなp性の高い正孔輸送層を用いることが、より低消費電力の素子を作製することができるため好ましい。 In the present invention, it is preferable to use a hole transport layer having such a high p property because a device with lower power consumption can be produced.
《電子輸送層》
電子輸送層とは電子を輸送する機能を有する材料からなり、広い意味で電子注入層、正孔阻止層も電子輸送層に含まれる。電子輸送層は単層または複数層設けることができる。
《Electron transport layer》
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided as a single layer or a plurality of layers.
従来、単層の電子輸送層、及び複数層とする場合は発光層に対して陰極側に隣接する電子輸送層に用いられる電子輸送材料(正孔阻止材料を兼ねる)としては、陰極より注入された電子を発光層に伝達する機能を有していればよく、その材料としては従来公知の化合物の中から任意のものを選択して用いることができ、例えば、ニトロ置換フルオレン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、カルボジイミド、フレオレニリデンメタン誘導体、アントラキノジメタン及びアントロン誘導体、オキサジアゾール誘導体等が挙げられる。更に、上記オキサジアゾール誘導体において、オキサジアゾール環の酸素原子を硫黄原子に置換したチアジアゾール誘導体、電子吸引基として知られているキノキサリン環を有するキノキサリン誘導体も、電子輸送材料として用いることができる。更にこれらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。 Conventionally, in the case of a single electron transport layer and a plurality of layers, an electron transport material (also serving as a hole blocking material) used for an electron transport layer adjacent to the light emitting layer on the cathode side is injected from the cathode. As long as it has a function of transferring electrons to the light-emitting layer, any material can be selected and used from among conventionally known compounds. For example, nitro-substituted fluorene derivatives, diphenylquinone derivatives Thiopyrandioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane and anthrone derivatives, oxadiazole derivatives and the like. Furthermore, in the above oxadiazole derivative, a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group can also be used as an electron transport material. Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
また、8−キノリノール誘導体の金属錯体、例えば、トリス(8−キノリノール)アルミニウム(Alq)、トリス(5,7−ジクロロ−8−キノリノール)アルミニウム、トリス(5,7−ジブロモ−8−キノリノール)アルミニウム、トリス(2−メチル−8−キノリノール)アルミニウム、トリス(5−メチル−8−キノリノール)アルミニウム、ビス(8−キノリノール)亜鉛(Znq)等、及びこれらの金属錯体の中心金属がIn、Mg、Cu、Ca、Sn、GaまたはPbに置き替わった金属錯体も、電子輸送材料として用いることができる。その他、メタルフリーもしくはメタルフタロシアニン、またはそれらの末端がアルキル基やスルホン酸基等で置換されているものも、電子輸送材料として好ましく用いることができる。また、発光層の材料として例示したジスチリルピラジン誘導体も、電子輸送材料として用いることができるし、正孔注入層、正孔輸送層と同様に、n型−Si、n型−SiC等の無機半導体も電子輸送材料として用いることができる。 In addition, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), and the like, and the central metals of these metal complexes are In, Mg, Metal complexes replaced with Cu, Ca, Sn, Ga or Pb can also be used as the electron transport material. In addition, metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material. In addition, the distyrylpyrazine derivative exemplified as the material of the light emitting layer can also be used as an electron transport material, and similarly to the hole injection layer and the hole transport layer, inorganic such as n-type-Si and n-type-SiC can be used. A semiconductor can also be used as an electron transport material.
電子輸送層は上記電子輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができる。電子輸送層の膜厚については特に制限はないが、通常は5nm〜5μm程度、好ましくは5〜200nmである。電子輸送層は上記材料の1種または2種以上からなる一層構造であってもよい。 The electron transport layer can be formed by thinning the electron transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. Although there is no restriction | limiting in particular about the film thickness of an electron carrying layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5-200 nm. The electron transport layer may have a single layer structure composed of one or more of the above materials.
また、不純物をドープしたn性の高い電子輸送層を用いることもできる。その例としては、特開平4−297076号公報、特開平10−270172号公報、特開2000−196140号公報、特開2001−102175号公報、J.Appl.Phys.,95,5773(2004)などに記載されたものが挙げられる。 Further, an electron transport layer having a high n property doped with impurities can also be used. Examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.
本発明においては、このようなn性の高い電子輸送層を用いることがより低消費電力の素子を作製することができるため好ましい。 In the present invention, it is preferable to use an electron transport layer having such a high n property because an element with lower power consumption can be manufactured.
《支持基板》
本発明の有機EL素子に用いることのできる支持基板(以下、基体、基板、基材、支持体等ともいう)としては、ガラス、プラスチック等の種類には特に限定はなく、また、透明であっても不透明であってもよい。支持基板側から光を取り出す場合には、支持基板は透明であることが好ましい。好ましく用いられる透明な支持基板としては、ガラス、石英、透明樹脂フィルムを挙げることができる。特に好ましい支持基板は、有機EL素子にフレキシブル性を与えることが可能な樹脂フィルムである。
《Support substrate》
The support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention is not particularly limited in the type of glass, plastic, etc., and is transparent. Or opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
樹脂フィルムとしては、例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステル、ポリエチレン、ポリプロピレン、セロファン、セルロースジアセテート、セルローストリアセテート、セルロースアセテートブチレート、セルロースアセテートプロピオネート(CAP)、セルロースアセテートフタレート(TAC)、セルロースナイトレート等のセルロースエステル類又はそれらの誘導体、ポリ塩化ビニリデン、ポリビニルアルコール、ポリエチレンビニルアルコール、シンジオタクティックポリスチレン、ポリカーボネート、ノルボルネン樹脂、ポリメチルペンテン、ポリエーテルケトン、ポリイミド、ポリエーテルスルホン(PES)、ポリフェニレンスルフィド、ポリスルホン類、ポリエーテルイミド、ポリエーテルケトンイミド、ポリアミド、フッ素樹脂、ナイロン、ポリメチルメタクリレート、アクリル或いはポリアリレート類、アートン(商品名JSR社製)或いはアペル(商品名三井化学社製)といったシクロオレフィン系樹脂等を挙げられる。樹脂フィルムの表面には、無機物、有機物の被膜またはその両者のハイブリッド被膜が形成されていてもよく、水蒸気透過度が0.01g/m2/day・atm以下のバリア性フィルムであることが好ましく、更には、酸素透過度10-3g/m2/day以下、水蒸気透過度10-5g/m2/day以下の高バリア性フィルムであることが好ましい。 Examples of the resin film include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones, Cycloolefin resins such as polyether imide, polyether ketone imide, polyamide, fluororesin, nylon, polymethyl methacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by Mitsui Chemicals) Can be mentioned. The surface of the resin film may be formed with an inorganic film, an organic film, or a hybrid film of both, and is preferably a barrier film having a water vapor permeability of 0.01 g / m 2 / day · atm or less. Furthermore, a high barrier film having an oxygen permeability of 10 −3 g / m 2 / day or less and a water vapor permeability of 10 −5 g / m 2 / day or less is preferable.
該バリア膜を形成する材料としては、水分や酸素など素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素などを用いることができる。更に該膜の脆弱性を改良するためにこれら無機層と有機材料からなる層の積層構造を持たせることがより好ましい。無機層と有機層の積層順については特に制限はないが、両者を交互に複数回積層させることが好ましい。 As a material for forming the barrier film, any material may be used as long as it has a function of suppressing intrusion of an element such as moisture or oxygen that causes deterioration of the element. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and layers made of organic materials. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times.
該バリア膜の形成方法については、特に限定はなく、例えば真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ−イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法などを用いることができるが、特開2004−68143号に記載されているような大気圧プラズマ重合法によるものが特に好ましい。 The method for forming the barrier film is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
不透明な支持基板としては、例えばアルミ、ステンレス等の金属板、フィルムや不透明樹脂基板、セラミック製の基板等が挙げられる。 Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.
本発明の有機EL素子の発光の室温における外部取り出し効率は1%以上であることが好ましく、より好ましくは5%以上である。ここに、外部取り出し量子効率(%)=有機EL素子外部に発光した光子数/有機EL素子に流した電子数×100である。 The external extraction efficiency at room temperature of light emission of the organic EL device of the present invention is preferably 1% or more, more preferably 5% or more. Here, the external extraction quantum efficiency (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.
また、カラーフィルター等の色相改良フィルター等を併用しても、有機EL素子からの発光色を蛍光体を用いて多色へ変換する色変換フィルターを併用してもよい。色変換フィルターを用いる場合においては、有機EL素子の発光のλmaxは480nm以下が好ましい。 In addition, a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor. In the case of using a color conversion filter, the λmax of light emission of the organic EL element is preferably 480 nm or less.
《封止》
本発明に用いられる封止手段としては、例えば封止部材と、電極、支持基板とを接着剤で接着する方法を挙げることができる。
<Sealing>
As a sealing means used for this invention, the method of adhere | attaching a sealing member, an electrode, and a support substrate with an adhesive agent can be mentioned, for example.
封止部材としては、有機EL素子の表示領域を覆うように配置されておればよく、凹板状でも、平板状でもよい。また、透明性、電気絶縁性は特に問わない。 The sealing member may be disposed so as to cover the display area of the organic EL element, and may be concave or flat. Further, transparency and electrical insulation are not particularly limited.
具体的には、ガラス板、ポリマー板・フィルム、金属板・フィルム等が挙げられる。ガラス板としては、特にソーダ石灰ガラス、バリウム・ストロンチウム含有ガラス、鉛ガラス、アルミノケイ酸ガラス、ホウケイ酸ガラス、バリウムホウケイ酸ガラス、石英等を挙げることができる。また、ポリマー板としては、ポリカーボネート、アクリル、ポリエチレンテレフタレート、ポリエーテルサルファイド、ポリサルフォン等を挙げることができる。金属板としては、ステンレス、鉄、銅、アルミニウム、マグネシウム、ニッケル、亜鉛、クロム、チタン、モリブテン、シリコン、ゲルマニウムおよびタンタルからなる群から選ばれる一種以上の金属または合金からなるものが挙げられる。本発明においては、素子を薄膜化できるということからポリマーフィルム、金属フィルムを好ましく使用することができる。更には、ポリマーフィルムは、酸素透過度10-3g/m2/day以下、水蒸気透過度10-5g/m2/day以下のものであることが好ましい。 Specific examples include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz. Examples of the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone. Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum. In the present invention, a polymer film and a metal film can be preferably used because the element can be thinned. Furthermore, the polymer film preferably has an oxygen permeability of 10 −3 g / m 2 / day or less and a water vapor permeability of 10 −5 g / m 2 / day or less.
封止部材を凹状に加工するのは、サンドブラスト加工、化学エッチング加工等が使われる。 For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.
接着剤として具体的には、アクリル酸系オリゴマー、メタクリル酸系オリゴマーの反応性ビニル基を有する光硬化および熱硬化型接着剤、2−シアノアクリル酸エステルなどの湿気硬化型等の接着剤を挙げることができる。また、エポキシ系などの熱および化学硬化型(二液混合)を挙げることができる。また、ホットメルト型のポリアミド、ポリエステル、ポリオレフィンを挙げることができる。また、カチオン硬化タイプの紫外線硬化型エポキシ樹脂接着剤を挙げることができる。 Specific examples of the adhesive include photocuring and thermosetting adhesives having a reactive vinyl group of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylate. be able to. Moreover, the heat | fever and chemical curing types (two-component mixing), such as an epoxy type, can be mentioned. Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
なお、有機EL素子が熱処理により劣化する場合があるので、室温から80℃までに接着硬化できるものが好ましい。また、前記接着剤中に乾燥剤を分散させておいてもよい。封止部分への接着剤の塗布は、市販のディスペンサーを使ってもよいし、スクリーン印刷のように印刷してもよい。 In addition, since an organic EL element may deteriorate by heat processing, what can be adhesive-hardened from room temperature to 80 degreeC is preferable. A desiccant may be dispersed in the adhesive. Application | coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print it like screen printing.
また、有機層を挟み支持基板と対向する側の電極の外側に、該電極と有機層を被覆し、支持基板と接する形で無機物、有機物の層を形成し封止膜とすることも好適にできる。この場合、該膜を形成する材料としては、水分や酸素など素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素などを用いることができる。更に該膜の脆弱性を改良するためにこれら無機層と有機材料からなる層の積層構造を持たせることが好ましい。これらの膜の形成方法については、特に限定はなく、例えば真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ−イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法などを用いることができる。 In addition, it is also preferable to coat the electrode and the organic layer on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and form an inorganic or organic layer in contact with the support substrate to form a sealing film. it can. In this case, the material for forming the film may be any material that has a function of suppressing intrusion of elements that cause deterioration of the element such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like is used. it can. Furthermore, in order to improve the brittleness of the film, it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials. The method for forming these films is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster-ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
封止部材と有機EL素子の表示領域との間隙には、気相および液相では、窒素、アルゴン等の不活性気体や、フッ化炭化水素、シリコンオイルのような不活性液体を注入することが好ましい。また、真空とすることも可能である。また、内部に吸湿性化合物を封入することもできる。 In the gap between the sealing member and the display area of the organic EL element, an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil is injected in the gas phase and the liquid phase. Is preferred. A vacuum can also be used. Moreover, a hygroscopic compound can also be enclosed inside.
吸湿性化合物としては例えば金属酸化物(例えば、酸化ナトリウム、酸化カリウム、酸化カルシウム、酸化バリウム、酸化マグネシウム、酸化アルミニウム等)、硫酸塩(例えば、硫酸ナトリウム、硫酸カルシウム、硫酸マグネシウム、硫酸コバルト等)、金属ハロゲン化物(例えば、塩化カルシウム、塩化マグネシウム、フッ化セシウム、フッ化タンタル、臭化セリウム、臭化マグネシウム、沃化バリウム、沃化マグネシウム等)、過塩素酸類(例えば過塩素酸バリウム、過塩素酸マグネシウム等)等があげられ、硫酸塩、金属ハロゲン化物および過塩素酸類においては無水塩が好適に用いられる。 Examples of the hygroscopic compound include metal oxides (eg, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide), sulfates (eg, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate, etc.). Metal halides (eg, calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide, etc.), perchloric acids (eg, barium perchlorate, In particular, anhydrous salts are preferably used in sulfates, metal halides and perchloric acids.
《保護膜、保護板》
有機層を挟み支持基板と対向する側の前記封止膜あるいは前記封止用フィルムの外側に、素子の機械的強度を高めるために保護膜、あるいは保護板を設けてもよい。特に、封止が前記封止膜により行われている場合には、その機械的強度は必ずしも高くないため、このような保護膜、保護板を設けることが好ましい。これに使用することができる材料としては、前記封止に用いたのと同様なガラス板、ポリマー板・フィルム、金属板・フィルム等を用いることができるが、軽量かつ薄膜化ということからポリマーフィルムを用いることが好ましい。
《Protective film, protective plate》
In order to increase the mechanical strength of the element, a protective film or a protective plate may be provided outside the sealing film or the sealing film on the side facing the support substrate with the organic layer interposed therebetween. In particular, when sealing is performed by the sealing film, the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate. As a material that can be used for this, the same glass plate, polymer plate / film, metal plate / film, etc. used for the sealing can be used. Is preferably used.
《光取出し》
有機エレクトロルミネッセンス素子は、空気よりも屈折率の高い(屈折率が1.7〜2.1程度)層の内部で発光し、発光層で発生した光のうち15%から20%程度の光しか取り出せないことが一般的に言われている。これは、臨界角以上の角度θで界面(透明基板と空気との界面)に入射する光は、全反射を起こし素子外部に取り出すことができないことや、透明電極ないし発光層と透明基板との間で光が全反射を起こし、光が透明電極ないし発光層を導波し、結果として、光が素子側面方向に逃げるためである。
《Light extraction》
An organic electroluminescence element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1), and only 15% to 20% of the light generated in the light emitting layer. It is generally said that it cannot be taken out. This is because light incident on the interface (interface between the transparent substrate and air) at an angle θ greater than the critical angle causes total reflection and cannot be taken out of the device, or between the transparent electrode or light emitting layer and the transparent substrate. This is because light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the side surface of the device.
この光の取り出しの効率を向上させる手法としては、例えば、透明基板表面に凹凸を形成し、透明基板と空気界面での全反射を防ぐ方法(米国特許第4774435号)、基板に集光性を持たせることにより効率を向上させる方法(特開昭63−314795号)、素子の側面等に反射面を形成する方法(特開平1−220394号)、基板と発光体の間に中間の屈折率を持つ平坦層を導入し、反射防止膜を形成する方法(特開昭62−172691号)、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法(特開2001−202827号)、基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法(特開平11−283751号)などがある。 As a method for improving the light extraction efficiency, for example, a method of forming irregularities on the surface of the transparent substrate to prevent total reflection at the interface between the transparent substrate and the air (US Pat. No. 4,774,435), condensing light to the substrate. A method for improving the efficiency by providing the surface (Japanese Patent Laid-Open No. 63-314795), a method for forming a reflecting surface on the side surface of the element (Japanese Patent Laid-Open No. 1-220394), an intermediate refractive index between the substrate and the light emitter A method of introducing a flat layer having a refractive index and forming an antireflection film (Japanese Patent Laid-Open No. 62-172691), and a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitting body (Japanese Patent Laid-Open No. 2001) -202827), and a method of forming a diffraction grating between any one of the substrate, the transparent electrode layer and the light emitting layer (including between the substrate and the outside) (Japanese Patent Laid-Open No. 11-283951).
本発明においては、これらの方法を本発明の有機エレクトロルミネッセンス素子と組み合わせて用いることができるが、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法、あるいは基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法を好適に用いることができる。 In the present invention, these methods can be used in combination with the organic electroluminescence device of the present invention, but a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, A method of forming a diffraction grating between any layers of the transparent electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
本発明は、これらの手段を組み合わせることにより、更に高輝度あるいは耐久性に優れた素子を得ることができる。 In the present invention, by combining these means, it is possible to obtain an element having higher luminance or durability.
透明電極と透明基板の間に低屈折率の媒質を光の波長よりも長い厚みで形成すると、透明電極から出てきた光は、媒質の屈折率が低いほど、外部への取り出し効率が高くなる。 When a low refractive index medium is formed between the transparent electrode and the transparent substrate with a thickness longer than the wavelength of light, the light extracted from the transparent electrode has a higher extraction efficiency to the outside as the refractive index of the medium is lower. .
低屈折率層としては、例えば、エアロゲル、多孔質シリカ、フッ化マグネシウム、フッ素系ポリマーなどが挙げられる。透明基板の屈折率は一般に1.5〜1.7程度であるので、低屈折率層は、屈折率がおよそ1.5以下であることが好ましい。またさらに1.35以下であることが好ましい。 Examples of the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Furthermore, it is preferable that it is 1.35 or less.
また、低屈折率媒質の厚みは、媒質中の波長の2倍以上となるのが望ましい。これは、低屈折率媒質の厚みが、光の波長程度になってエバネッセントで染み出した電磁波が基板内に入り込む膜厚になると、低屈折率層の効果が薄れるからである。 The thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
全反射を起こす界面もしくはいずれかの媒質中に回折格子を導入する方法は、光取り出し効率の向上効果が高いという特徴がある。この方法は、回折格子が1次の回折や、2次の回折といったいわゆるブラッグ回折により、光の向きを屈折とは異なる特定の向きに変えることができる性質を利用して、発光層から発生した光のうち、層間での全反射等により外に出ることができない光を、いずれかの層間もしくは、媒質中(透明基板内や透明電極内)に回折格子を導入することで光を回折させ、光を外に取り出そうとするものである。 The method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency. This method is generated from the light emitting layer by utilizing the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction or second-order diffraction. Of the light, light that cannot go out due to total reflection between layers, etc., is diffracted by introducing a diffraction grating in any layer or medium (in the transparent substrate or transparent electrode) It tries to take out light.
導入する回折格子は、二次元的な周期屈折率を持っていることが望ましい。これは、発光層で発光する光はあらゆる方向にランダムに発生するので、ある方向にのみ周期的な屈折率分布を持っている一般的な1次元回折格子では、特定の方向に進む光しか回折されず、光の取り出し効率がさほど上がらない。しかしながら、屈折率分布を二次元的な分布にすることにより、あらゆる方向に進む光が回折され、光の取り出し効率が上がる。 The introduced diffraction grating desirably has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. The light extraction efficiency does not increase so much. However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and light extraction efficiency is increased.
回折格子を導入する位置としては前述のとおり、いずれかの層間もしくは、媒質中(透明基板内や透明電極内)でも良いが、光が発生する場所である有機発光層の近傍が望ましい。 As described above, the position where the diffraction grating is introduced may be in any of the layers or in the medium (in the transparent substrate or the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
このとき、回折格子の周期は、媒質中の光の波長の約1/2〜3倍程度が好ましい。 At this time, the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
回折格子の配列は、正方形のラチス状、三角形のラチス状、ハニカムラチス状など、2次元的に配列が繰り返されることが好ましい。 The arrangement of the diffraction gratings is preferably two-dimensionally repeated, such as a square lattice, a triangular lattice, or a honeycomb lattice.
《集光シート》
本発明の有機エレクトロルミネッセンス素子は、基板の光取出し側に、例えばマイクロレンズアレイ状の構造を設けるように加工したり、あるいは、所謂集光シートと組み合わせることにより、特定方向、例えば素子発光面に対し正面方向に集光することにより、特定方向上の輝度を高めることができる。
<Condenser sheet>
The organic electroluminescence device of the present invention is processed in a microlens array-like structure on the light extraction side of the substrate, or combined with a so-called condensing sheet, for example, in a specific direction, for example, the device light emitting surface. On the other hand, the brightness | luminance in a specific direction can be raised by condensing in a front direction.
マイクロレンズアレイの例としては、基板の光取り出し側に一辺が30μmでその頂角が90度となるような四角錐を2次元に配列する。一辺は10μm〜100μmが好ましい。これより小さくなると回折の効果が発生して色付く、大きすぎると厚みが厚くなり好ましくない。 As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are two-dimensionally arranged on the light extraction side of the substrate. One side is preferably 10 μm to 100 μm. If it becomes smaller than this, the effect of diffraction will generate | occur | produce and color, and if too large, thickness will become thick and is not preferable.
集光シートとしては、例えば液晶表示装置のLEDバックライトで実用化されているものを用いることが可能である。このようなシートとして例えば、住友スリーエム社製輝度上昇フィルム(BEF)などを用いることができる。プリズムシートの形状としては、例えば基材に頂角90度、ピッチ50μmの△状のストライプが形成されたものであってもよいし、頂角が丸みを帯びた形状、ピッチをランダムに変化させた形状、その他の形状であっても良い。 As the condensing sheet, for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used. As the shape of the prism sheet, for example, a substrate may be formed with a Δ-shaped stripe having an apex angle of 90 degrees and a pitch of 50 μm, or the apex angle is rounded and the pitch is changed randomly. Other shapes may also be used.
また、発光素子からの光放射角を制御するために光拡散板・フィルムを、集光シートと併用してもよい。例えば、(株)きもと製拡散フィルム(ライトアップ)などを用いることができる。 Moreover, in order to control the light emission angle from a light emitting element, you may use together a light diffusing plate and a film with a condensing sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
《有機EL素子の作製方法》
本発明の有機EL素子の作製方法の一例として、陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極からなる有機EL素子の作製法について説明する。
<< Method for producing organic EL element >>
As an example of the method for producing the organic EL device of the present invention, a method for producing an organic EL device comprising an anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode will be described.
まず適当な基体上に所望の電極物質、例えば、陽極用物質からなる薄膜を1μm以下、好ましくは10〜200nmの膜厚になるように、蒸着やスパッタリング等の方法により形成させ、陽極を作製する。 First, a thin film made of a desired electrode material, for example, a material for an anode is formed on a suitable substrate by a method such as vapor deposition or sputtering so as to have a film thickness of 1 μm or less, preferably 10 to 200 nm to produce an anode. .
次に、この上に有機EL素子材料である正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層、正孔阻止層の有機化合物薄膜を形成させる。 Next, an organic compound thin film of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a hole blocking layer, which are organic EL element materials, is formed thereon.
この有機化合物薄膜の薄膜化の方法としては、前記の如く蒸着法、ウェットプロセス(スピンコート法、キャスト法、インクジェット法、印刷法)等があるが、均質な膜が得られやすく、且つピンホールが生成しにくい等の点から、本発明においては、スピンコート法、インクジェット法、印刷法等の塗布法による製膜が特に好ましい。 As a method for thinning the organic compound thin film, there are a vapor deposition method and a wet process (spin coating method, casting method, ink jet method, printing method) as described above, but it is easy to obtain a uniform film and a pinhole. In the present invention, film formation by a coating method such as a spin coating method, an ink jet method, or a printing method is particularly preferable.
本発明においては、発光層の形成において、本発明の金属錯体を溶解または分散した液を用いて塗布法により成膜することが好ましく、特に塗布法がインクジェット法であることが好ましい。 In the present invention, in the formation of the light emitting layer, it is preferable to form a film by a coating method using a solution in which the metal complex of the present invention is dissolved or dispersed, and the coating method is particularly preferably an ink jet method.
本発明の金属錯体を溶解または分散する液媒体としては、例えば、メチルエチルケトン、シクロヘキサノンなどのケトン類、酢酸エチル等の脂肪酸エステル類、ジクロロベンゼン等のハロゲン化炭化水素類、DMF、DMSO等の有機溶媒を用いることができる。また、分散方法としては、超音波、高剪断力分散やメディア分散等の分散方法により分散することができる。 Examples of the liquid medium for dissolving or dispersing the metal complex of the present invention include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, and organic solvents such as DMF and DMSO. Can be used. Moreover, as a dispersion method, it can disperse | distribute by dispersion methods, such as an ultrasonic wave, high shear force dispersion | distribution, and media dispersion | distribution.
これらの層を形成後、その上に陰極用物質からなる薄膜を、1μm以下好ましくは50nm〜200nmの範囲の膜厚になるように、例えば、蒸着やスパッタリング等の方法により形成させ、陰極を設けることにより所望の有機EL素子が得られる。 After forming these layers, a thin film made of a cathode material is formed thereon by a method such as vapor deposition or sputtering so as to have a film thickness of 1 μm or less, preferably in the range of 50 nm to 200 nm, and a cathode is provided. Thus, a desired organic EL element can be obtained.
また作製順序を逆にして、陰極、電子注入層、電子輸送層、発光層、正孔輸送層、正孔注入層、陽極の順に作製することも可能である。このようにして得られた多色の表示装置に、直流電圧を印加する場合には、陽極を+、陰極を−の極性として電圧2〜40V程度を印加すると、発光が観測できる。また交流電圧を印加してもよい。なお、印加する交流の波形は任意でよい。 In addition, it is also possible to reverse the production order and produce the cathode, the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer, the hole injection layer, and the anode in this order. When a DC voltage is applied to the multicolor display device thus obtained, light emission can be observed by applying a voltage of about 2 to 40 V with the positive polarity of the anode and the negative polarity of the cathode. An alternating voltage may be applied. The alternating current waveform to be applied may be arbitrary.
《用途》
本発明の有機エレクトロルミネッセンス素子は、表示デバイス、ディスプレイ、各種発光光源として用いることができる。発光光源として、例えば、家庭用照明、車内照明、時計や液晶用のバックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるがこれに限定するものではないが、特に液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
<Application>
The organic electroluminescence element of the present invention can be used as a display device, a display, or various light sources. Examples of light sources include home lighting, interior lighting, clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, and light sources for optical sensors. However, the present invention is not limited to this, but it can be effectively used particularly as a backlight of a liquid crystal display device and a light source for illumination.
本発明に係わる有機エレクトロルミネッセンス素子においては、必要に応じ製膜時にメタルマスクやインクジェットプリンティング法等でパターニングを施してもよい。パターニングする場合は、電極のみをパターニングしてもいいし、電極と発光層をパターニングしてもいいし、素子全層をパターニングしてもいい。 In the organic electroluminescence element according to the present invention, patterning may be performed by a metal mask, an ink jet printing method, or the like at the time of film formation, if necessary. When patterning, only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire element layer may be patterned.
以下、実施例により本発明を説明するが、本発明の実施態様はこれらに限定されるものではない。 EXAMPLES Hereinafter, although an Example demonstrates this invention, the embodiment of this invention is not limited to these.
実施例1
〈有機EL素子1−1〜48の作製〉
陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm製膜した基板(NHテクノグラス社製NA45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行なった。この透明支持基板を市販の真空蒸着装置の基板ホルダーに固定し、一方、モリブデン製抵抗加熱ボートにα−NPDを200mg入れ、別のモリブデン製抵抗加熱ボートにホスト化合物としてH−22を200mg入れ、別のモリブデン製抵抗加熱ボートにバソキュプロイン(BCP)を200mg入れ、別のモリブデン製抵抗加熱ボートに例示化合物1を100mg入れ、更に別のモリブデン製抵抗加熱ボートにAlq3を200mg入れ、真空蒸着装置に取付けた。
Example 1
<Preparation of organic EL elements 1-1 to 48>
Transparent support provided with this ITO transparent electrode after patterning on a substrate (NH45 manufactured by NH Techno Glass) made of ITO (indium tin oxide) with a thickness of 100 nm on a glass substrate of 100 mm × 100 mm × 1.1 mm as an anode The substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes. This transparent support substrate was fixed to a substrate holder of a commercially available vacuum deposition apparatus, while 200 mg of α-NPD was put in a molybdenum resistance heating boat, and 200 mg of H-22 as a host compound was put in another molybdenum resistance heating boat, 200 mg of bathocuproin (BCP) is put in another resistance heating boat made of molybdenum, 100 mg of Exemplified Compound 1 is put in another resistance heating boat made of molybdenum, and 200 mg of Alq 3 is put in another resistance heating boat made of molybdenum. Installed.
次いで、真空槽を4×10-4Paまで減圧した後、α−NPDの入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/secで透明支持基板に蒸着し、膜厚40nmの正孔輸送層を設けた。更に、H−22と例示化合物1の入った前記加熱ボートに通電して加熱し、それぞれ蒸着速度0.2nm/sec、0.012nm/secで前記正孔輸送層上に共蒸着して、膜厚40nmの発光層を設けた。なお、蒸着時の基板温度は室温であった。更に、BCPの入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/secで前記発光層の上に蒸着して膜厚10nmの正孔阻止の役割も兼ねた電子輸送層を設けた。その上に、更に、Alq3の入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/secで前記電子輸送層の上に蒸着して更に膜厚40nmの電子注入層を設けた。なお、蒸着時の基板温度は室温であった。 Next, after the pressure in the vacuum chamber was reduced to 4 × 10 −4 Pa, the heating boat containing α-NPD was energized and heated, and deposited on the transparent support substrate at a deposition rate of 0.1 nm / sec. The hole transport layer was provided. Further, the heating boat containing H-22 and Exemplified Compound 1 was energized and heated, and co-deposited on the hole transport layer at a deposition rate of 0.2 nm / sec and 0.012 nm / sec, respectively. A light emitting layer having a thickness of 40 nm was provided. In addition, the substrate temperature at the time of vapor deposition was room temperature. In addition, an electron transport layer that also serves as a hole blocking function with a film thickness of 10 nm is provided by energizing and heating the heating boat containing BCP and depositing on the light emitting layer at a deposition rate of 0.1 nm / sec. It was. Furthermore, the heating boat containing Alq 3 was further energized and heated, and was deposited on the electron transport layer at a deposition rate of 0.1 nm / sec to provide an electron injection layer having a thickness of 40 nm. . In addition, the substrate temperature at the time of vapor deposition was room temperature.
引き続きフッ化リチウム0.5nm及びアルミニウム110nmを蒸着して陰極を形成し、有機EL素子1−1を作製した。 Then, 0.5 nm of lithium fluoride and 110 nm of aluminum were vapor-deposited, the cathode was formed, and the organic EL element 1-1 was produced.
有機EL素子1−1の作製において、発光層のゲスト化合物として用いている例示化合物1を表22に示す化合物に置き換えてゲスト化合物とした以外は有機EL素子1−1と同じ方法で1−2〜1−48を作製した。上記で使用した化合物の構造を以下に示す。 In the production of the organic EL element 1-1, 1-2 was performed in the same manner as the organic EL element 1-1 except that the compound shown in Table 22 was used instead of the exemplified compound 1 used as the guest compound of the light emitting layer to obtain a guest compound. ˜1-48 was produced. The structure of the compound used above is shown below.
《有機EL素子の評価》
得られた有機EL素子1−1〜1−48を評価するに際しては、作製後の各有機EL素子の非発光面をガラスケースで覆い、厚み300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを上記陰極上に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止して、図1、図2に示すような照明装置を形成して評価した。
<< Evaluation of organic EL elements >>
When evaluating the obtained organic EL elements 1-1 to 1-48, the non-light emitting surface of each organic EL element after production was covered with a glass case, and a glass substrate having a thickness of 300 μm was used as a sealing substrate. An epoxy-based photo-curing adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealing material in the periphery, and this is placed on the cathode to be in close contact with the transparent support substrate and irradiated with UV light from the glass substrate side. Then, it was cured and sealed, and an illumination device as shown in FIGS. 1 and 2 was formed and evaluated.
図1は照明装置の概略図を示し、有機EL素子101はガラスカバー102で覆われている(なお、ガラスカバーでの封止作業は、有機EL素子101を大気に接触させることなく窒素雰囲気下のグローブボックス(純度99.999%以上の高純度窒素ガスの雰囲気下)で行った)。図2は照明装置の断面図を示し、図2において、105は陰極、106は有機EL層、107は透明電極付きガラス基板を示す。なお、ガラスカバー102内には窒素ガス108が充填され、捕水剤109が設けられている。 FIG. 1 shows a schematic diagram of a lighting device, in which an organic EL element 101 is covered with a glass cover 102 (in addition, sealing with a glass cover is performed in a nitrogen atmosphere without bringing the organic EL element 101 into contact with the atmosphere. (In a high purity nitrogen gas atmosphere with a purity of 99.999% or more). FIG. 2 shows a cross-sectional view of the lighting device. In FIG. 2, 105 denotes a cathode, 106 denotes an organic EL layer, and 107 denotes a glass substrate with a transparent electrode. The glass cover 102 is filled with nitrogen gas 108 and a water catching agent 109 is provided.
(外部取り出し量子効率)
有機EL素子を室温(約23〜25℃)、2.5mA/cm2の定電流条件下による点灯を行い、点灯開始直後の発光輝度(L)[cd/m2]を測定することにより、外部取り出し量子効率(η)を算出した。ここで、発光輝度の測定はCS−1000(コニカミノルタセンシング製)を用いた。外部取り出し量子効率は有機EL素子1−47(比較1)を100とする相対値で表した。
(External quantum efficiency)
By lighting the organic EL element under a constant current condition of room temperature (about 23 to 25 ° C.) and 2.5 mA / cm 2 , and measuring the emission luminance (L) [cd / m 2 ] immediately after the start of lighting, The external extraction quantum efficiency (η) was calculated. Here, CS-1000 (manufactured by Konica Minolta Sensing) was used for measurement of light emission luminance. The external extraction quantum efficiency was expressed as a relative value where the organic EL element 1-47 (Comparative 1) was 100.
(発光寿命)
有機EL素子を室温下、2.5mA/cm2の定電流条件下による連続点灯を行い、初期輝度の半分の輝度になるのに要する時間(τ1/2)を測定した。発光寿命は有機EL素子1−47(比較1)を100と設定する相対値で表した。
(Luminescent life)
At room temperature the organic EL device, the continuous lighting by constant current condition of 2.5 mA / cm 2, to measure the time taken to become half of the initial luminance (τ 1/2). The light emission lifetime was expressed as a relative value where the organic EL element 1-47 (Comparative 1) was set to 100.
得られた結果を表22に示す。 The obtained results are shown in Table 22.
表22から、本発明に係る金属錯体を用いて作製した有機EL素子は、比較1、2を用いた有機EL素子1−47、48に比べ、高い発光効率と発光寿命の長寿命化が達成できることが明らかである。 From Table 22, the organic EL element produced using the metal complex according to the present invention achieved higher luminous efficiency and longer lifetime compared to the organic EL elements 1-47 and 48 using Comparative 1 and 2. Obviously you can.
実施例2
実施例1で作製した本発明の有機EL素子1−1において、発光層のホスト化合物として用いているH−22をH−17に置き換えてホスト化合物とした以外は有機EL素子1−1と同じ方法で2−1を作製した。
Example 2
In the organic EL device 1-1 of the present invention produced in Example 1, the same as the organic EL device 1-1 except that H-22 used as the host compound in the light emitting layer was replaced with H-17 to form a host compound. 2-1 was produced by the method.
有機EL素子2−1の作製において、発光層のゲスト化合物として用いている例示化合物1を表23に示す化合物に置き換えてゲスト化合物とした以外は有機EL素子2−1と同じ方法で2−2〜2−39を作製した。上記で使用した化合物の構造を以下に示す。 In the production of the organic EL element 2-1, 2-2 was prepared in the same manner as the organic EL element 2-1, except that the compound shown in Table 23 was used instead of the exemplified compound 1 used as the guest compound of the light emitting layer to obtain a guest compound. ˜2-39 was produced. The structure of the compound used above is shown below.
《有機EL素子の評価》
得られた有機EL素子2−1〜2−39を評価するに際しては、作製後の各有機EL素子の非発光面をガラスケースで覆い、厚み300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを上記陰極上に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止して、図1、図2に示すような照明装置を形成して評価した。
<< Evaluation of organic EL elements >>
When evaluating the obtained organic EL elements 2-1 to 2-39, the non-light-emitting surface of each organic EL element after production was covered with a glass case, and a glass substrate having a thickness of 300 μm was used as a sealing substrate. An epoxy-based photo-curing adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealing material in the periphery, and this is placed on the cathode to be in close contact with the transparent support substrate and irradiated with UV light from the glass substrate side. Then, it was cured and sealed, and an illumination device as shown in FIGS. 1 and 2 was formed and evaluated.
外部取り出し量子効率、発光寿命を実施例1と同様の方法で評価を行った。外部取り出し量子効率、発光寿命は、有機EL素子2−38(比較1)を100として各々相対値で表した。得られた結果を表23に示す。 External extraction quantum efficiency and light emission lifetime were evaluated in the same manner as in Example 1. The external extraction quantum efficiency and the light emission lifetime are expressed as relative values with the organic EL element 2-38 (Comparative 1) as 100. The results obtained are shown in Table 23.
表23から、本発明に係る金属錯体を用いて作製した有機EL素子は、比較例の有機EL素子に比べ、高い発光効率と発光寿命の長寿命化が達成できることが明らかである。 From Table 23, it is clear that the organic EL device produced using the metal complex according to the present invention can achieve higher luminous efficiency and longer lifetime than the organic EL device of the comparative example.
実施例3
実施例1の透明電極基板の電極を20mm×20mmにパターニングし、その上に実施例1と同様に正孔注入/輸送層としてα−NPDを50nmの厚さで成膜し、更にH−22の入った前記加熱ボートと化合物1の入ったボートおよびbtp2Ir(acac)の入ったボートをそれぞれ独立に通電して発光ホストである化合物H−22と発光ドーパントである化合物1およびbtp2Ir(acac)の蒸着速度が100:5:0.6になるように調節し膜厚30nmの厚さになるように蒸着し発光層を設けた。
Example 3
The electrode of the transparent electrode substrate of Example 1 was patterned to 20 mm × 20 mm, and α-NPD was formed as a hole injection / transport layer with a thickness of 50 nm thereon as in Example 1, and further H-22 The heating boat containing the compound, the boat containing the compound 1 and the boat containing the btp 2 Ir (acac) are energized independently, and the compound H-22 as the light emitting host and the compound 1 and btp 2 Ir as the light emitting dopant are supplied. The vapor deposition rate of (acac) was adjusted to 100: 5: 0.6, and the light emitting layer was provided by vapor deposition to a thickness of 30 nm.
次いで、BCPを10nm成膜して電子輸送層を設けた。更に、Alq3を40nmで成膜し電子注入層を設けた。 Next, BCP was deposited to a thickness of 10 nm to provide an electron transport layer. Further, Alq 3 was formed at 40 nm to provide an electron injection layer.
次に、真空槽を開け、電子注入層の上にステンレス鋼製の透明電極とほぼ同じ形状の正方形穴あきマスクを設置し、陰極バッファー層として弗化リチウム0.5nmおよび陰極としてアルミニウム110nmを蒸着成膜した。 Next, the vacuum chamber is opened, and a square perforated mask having the same shape as the stainless steel transparent electrode is placed on the electron injection layer, and 0.5 nm of lithium fluoride is deposited as a cathode buffer layer and 110 nm of aluminum is deposited as a cathode. A film was formed.
この素子を実施例1と同様な方法および同様な構造の封止缶を用いて封止し平面ランプを作製した。 This element was sealed using a sealing can having the same method and the same structure as in Example 1 to produce a flat lamp.
この平面ランプに通電したところほぼ白色の光が得られ、照明装置として使用出来ることが判った。尚、発光ホストを本発明の他の化合物に置き換えても同様に白色の発光が得られることが判った。 When this flat lamp was energized, almost white light was obtained, and it was found that it could be used as a lighting device. It has been found that even when the light emitting host is replaced with another compound of the present invention, white light emission can be obtained.
101 有機EL素子
102 ガラスカバー
107 透明電極付きガラス基板
106 有機EL層
105 陰極
108 窒素ガス
109 捕水剤
DESCRIPTION OF SYMBOLS 101 Organic EL element 102 Glass cover 107 Glass substrate with a transparent electrode 106 Organic EL layer 105 Cathode 108 Nitrogen gas 109 Water catching agent
Claims (8)
前記発光層が下記一般式(1)で表される化合物の少なくとも1つを含有する事を特徴とする有機エレクトロルミネッセンス素子。
The said light emitting layer contains at least 1 of the compound represented by following General formula (1), The organic electroluminescent element characterized by the above-mentioned.
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US9051344B2 (en) * | 2005-05-06 | 2015-06-09 | Universal Display Corporation | Stability OLED materials and devices |
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