JP4909533B2 - Semiconductor laser device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor laser element applied to, for example, a blue-violet semiconductor laser element as a light source for writing / reading on a high-density optical disk, and a method for manufacturing the same.

A Group 3-5 nitride compound semiconductor represented by GaN (denoted as InGaAlN) has a large forbidden band width (3.4 eV at room temperature GaN) and can realize a device that emits light in a wavelength region from green to ultraviolet. Has attracted attention as a material. So far, green and blue light emitting diodes using InGaAlN have been commercialized and widely used for various displays and traffic lights. White light-emitting diodes that emit white light by exciting phosphors with blue light-emitting diodes or ultraviolet light-emitting diodes have been commercialized and are used for liquid crystal backlights and the like. As an application field of InGaAlN, a blue-violet semiconductor laser element that can be applied to a light source for a next-generation high-density optical disk is expected next to a light-emitting diode. For practical application, high output and long life are indispensable to support high-speed writing, but through the reduction of defects accompanying the progress of epitaxial growth technology and the improvement of performance accompanying the progress of device structure and process development. These have reached a level almost satisfying the specifications of the next-generation optical disc. In the future, it will be necessary to develop a blue-violet semiconductor laser device that satisfies the output specifications and is excellent in mass productivity and can be produced at high yield and low cost.

The structure of the high-power blue-violet semiconductor laser element that has been reported so far will be described below.
FIG. 7 is a cross-sectional view showing the structure of a conventional GaN-based blue-violet semiconductor laser element (see, for example, Non-Patent Document 1).

The blue-violet semiconductor laser device includes an n-type GaN layer 2, an n-type AlGaN cladding layer 3, an n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer 6, a p-type AlGaN electron barrier layer 7, A Ti / Au pad electrode 11, a Ti / Al / Ni / Au electrode 12, a sapphire substrate 13, a Ni / Au electrode 21, a p-type AlGaN cladding layer 20, a p-type GaN contact layer 23, and a SiO ₂ passivation film 22 are provided.

  On the sapphire substrate 13, for example, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, and an n-type GaN guide layer are formed by an epitaxial growth method using a metal organic chemical vapor deposition (MOCVD) method or the like. 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer 6, a p-type AlGaN electron barrier layer 7, a p-type AlGaN cladding layer 20, and a p-type GaN contact layer 21 are sequentially formed.

The p-type AlGaN cladding layer 20 and the p-type GaN contact layer 21 are partially etched to form stripe-shaped convex portions. The SiO ₂ passivation film 22 is formed so as to cover the side wall of the convex portion. At the top of the convex portion, an opening is provided in the SiO ₂ passivation film 22, and the Ni / Au electrode 19 and the Ti / Au pad electrode 11 are formed as ohmic electrodes on the p-type side. At this time, a part of the epitaxial growth layer is etched so that the n-type GaN layer 2 is exposed, and the Ti / Al / Ni / Au electrode 12 is on the n-type side on the exposed n-type GaN layer 2. It is formed as an ohmic electrode.

In the blue-violet semiconductor laser device having the above structure, the convex portion functions as a waveguide stripe of the semiconductor laser device, and the 405 nm light emitted from the InGaN multiple quantum well active layer 5 is emitted from the p-type AlGaN cladding layer 20 and the SiO ₂ passivation film. It is confined in the convex part due to the difference in refractive index with respect to 22. A blue-violet laser is realized by such a so-called ridge waveguide structure.
S. Nakamura et. Al., "The Blue Laser Diode", Springer-Verlag Berlin Heidelberg New York: p255

  By the way, in the semiconductor laser device having the conventional ridge structure shown in FIG. 7 and the manufacturing method thereof, in order to sufficiently increase the light confinement factor in the direction perpendicular to the active layer, specifically, AlGaN having an Al composition of 7%. In this case, it is necessary to form a clad layer having a total thickness of about 1.5 μm by setting the thickness of the n-type clad layer to 1 μm and the thickness of the p-type clad layer to 0.5 μm. However, in the epitaxial growth layer of the conventional semiconductor laser device, the lattice mismatch with the sapphire substrate is sufficiently relaxed in the n-type GaN layer, and the AlGaN layer formed thereon has a crystal strain to lattice match with the GaN layer. The crystal grows while having. Since AlGaN has a smaller lattice constant than GaN, the AlGaN layer grows while having tensile strain. For this reason, cracks are likely to occur in the AlGaN layer during or after crystal growth. This crack is more likely to occur as the Al composition of the AlGaN layer is larger or the film thickness of the AlGaN layer is larger. Therefore, as a method of suppressing cracks, a method of reducing the Al composition or reducing the film thickness is conceivable, but in order to obtain sufficient vertical light confinement in the semiconductor laser element, as described above, an Al of 7% composition is used. Since a composition and a film thickness of about 1.5 μm are required, this method cannot suppress cracks in the AlGaN layer. Further, in order to realize a low threshold current, it is necessary to match the peak of the light distribution with the peak of the gain, so that the thickness of the p-type cladding layer cannot be reduced to 0.5 μm or less. Thus, cracks in the AlGaN layer cannot be suppressed.

In addition, when AlGaN is epitaxially grown by a commonly used MOCVD method, sufficient crystal growth is possible due to a gas phase reaction between an Al source such as TMA (Tri-Methyl Aluminum) and an N source such as NH _3. It is difficult to obtain a speed, for example, it is very difficult to obtain a speed of 1 μm / hour or more. As a result, the growth rate of epitaxial growth for forming a semiconductor layer containing a large amount of AlGaN is slowed down, so that a conventional semiconductor laser device having an AlGaN layer as a cladding layer is expensive.

  In view of the above problems, it is a first object of the present invention to provide a high-yield semiconductor laser device in which cracks in the epitaxial growth layer are suppressed and a method for manufacturing the same.

  It is a second object of the present invention to provide a low-cost semiconductor laser device with a reduced epitaxial growth time and a method for manufacturing the same.

  In order to achieve the above object, a semiconductor laser device of the present invention includes a light emitting layer made of a semiconductor, and a current blocking layer which is located above the light emitting layer, has an opening, and is made of a first dielectric. And a transparent electrode that is formed in the opening, is transparent to the light of the light emitting layer, and functions as a cladding layer.

  With such a configuration, in the semiconductor laser structure, the cladding layer can be configured by a transparent electrode instead of the epitaxial growth layer, and the layer thickness of the AlGaN layer in the epitaxial growth layer can be reduced, thereby reducing the stress in the layer, Cracks generated during or after epitaxial growth can be reduced. As a result, it becomes difficult to be affected by cracks generated in the AlGaN layer, so that a high yield semiconductor laser device is realized. At the same time, the thickness of the epitaxially grown layer, particularly the growth rate of the AlGaN layer, which is slow and requires a long time for growth, is reduced, so that the crystal growth time is shortened and the manufacturing cost is reduced.

  Here, the transparent electrode may be made of a conductive oxide, and may have a refractive index that is larger than the refractive index of the current blocking layer and smaller than the refractive index of the light emitting layer.

  By adopting such a configuration, in the semiconductor laser structure, the cladding layer can be composed of a conductive oxide instead of the epitaxial growth layer, and the thickness of the AlGaN layer in the epitaxial growth layer can be reduced, thereby reducing the stress in the layer. In addition, cracks occurring during or after epitaxial growth can be reduced. As a result, a high yield semiconductor laser device is realized. At the same time, since crystal growth can be performed in a short time, a low-cost semiconductor laser device can be realized.

  The conductive oxide may be any one of indium oxide to which tin is added, tin oxide to which antimony is added, and zinc oxide.

By adopting such a configuration, the refractive index of the transparent electrode is larger than that of a dielectric such as SiO ₂ or SiN, and the resistivity is as small as 10 ⁻³ Ωcm or less. Therefore, the transparent electrode is used as a waveguide and an electrode. It is possible to realize a semiconductor laser device that can function, has a high yield, and is low in cost.

  The semiconductor laser device further includes a dielectric layer formed in the opening and made of a second dielectric, and the dielectric layer is located above the light emitting layer with the transparent electrode interposed therebetween. The refractive index may be larger than the refractive index of the current blocking layer and smaller than the refractive index of the light emitting layer.

  By adopting such a configuration, in the semiconductor laser structure, the cladding layer can be configured not by an epitaxial growth layer but by a thin transparent electrode and a high refractive index dielectric layer, and the thickness of the AlGaN layer in the epitaxial growth layer can be reduced. Therefore, it is possible to reduce the stress in the layer and reduce the cracks generated during or after the epitaxial growth. As a result, a high yield semiconductor laser device is realized. At the same time, since crystal growth can be performed in a short time, a low-cost semiconductor laser device can be realized. Furthermore, since the dielectric layer having a high refractive index can function as a waveguide, absorption in the waveguide is reduced. As a result, a high-power semiconductor laser device is realized.

The second dielectric may be any one of SiN, Nb ₂ O ₅ , ZrO ₂ , TiO ₂ and Ta ₂ O ₅ .

  With such a configuration, a dielectric film having the same refractive index can be easily formed with good reproducibility by a vapor deposition method or a sputtering method, so that a semiconductor laser device with a high yield and a low cost can be obtained. Can be realized.

  The semiconductor laser element may further include a p-type light guide layer made of a semiconductor and positioned between the light emitting layer and the current blocking layer and in contact with the transparent electrode.

  With such a configuration, ohmic contact with the transparent electrode can be ensured, so that a semiconductor laser element with a small series resistance and series voltage can be realized. For example, a resistivity of 1 Ωcm or less is possible.

  Further, the impurity concentration of the light guide layer may increase in a direction from the light emitting layer toward the transparent electrode.

  With such a configuration, it is possible to reduce the contact resistance of the transparent electrode with respect to the light guide layer, and thus it is possible to realize a semiconductor laser element having a smaller series resistance and series voltage.

The light guide layer may be composed of a semiconductor to which Mg is added.
With such a configuration, a p-type GaN-based semiconductor having a large carrier concentration can be used as the p-type guide layer, and the contact resistance with the transparent electrode can be reduced. Therefore, a semiconductor having a small series resistance and series voltage A laser element can be realized.

  The semiconductor laser element further includes a metal film located above the transparent electrode and a first substrate located above the metal film, and the first substrate is along a waveguide of the semiconductor laser element. It may have a cleavage plane perpendicular to the direction.

  By adopting such a configuration, it is possible to cleave a transparent electrode that is generally poorly cleaved together with the substrate, so that a semiconductor laser device with a high reflectivity of the resonator mirror and a low threshold current / low operating current is realized. Can do.

The metal film may include at least one of Au and AuSn.
By adopting such a structure, it is possible to bond different substrates by heating and eutecticizing the metal film. For example, transfer to a substrate excellent in heat dissipation or a substrate excellent in cleavage is possible. Therefore, it is possible to realize a semiconductor laser element having a long lifetime and a low threshold current.

  The first substrate may be made of any one of Si, GaAs, InP, and SiC.

  With such a structure, the substrate to be bonded becomes a substrate having excellent crystallinity and cleavage, so that a semiconductor laser element having a long lifetime and a low threshold current can be realized.

  The cleavage plane of the first substrate may be parallel to the <110> direction or the <1-100> direction.

  With such a configuration, the flatness of the cleavage plane is improved, so that a semiconductor laser element with a low threshold current can be realized.

The light emitting layer may be made of a compound semiconductor containing nitrogen.
With such a configuration, cracks occurring during or after epitaxial growth can be suppressed, so that a high yield blue-violet semiconductor laser device can be realized. In addition, since crystal growth can be performed in a short time, a low-cost blue-violet semiconductor laser device can be realized.

The semiconductor laser device further includes a second substrate on which the light emitting layer is formed. The second substrate is made of any one of sapphire, SiC, GaN, AlN, MgO, LiGaO ₂ and LiAlO _2. It may be configured.

  With such a configuration, an epitaxially grown layer having excellent crystallinity can be formed on the substrate, so that a semiconductor laser device having a low threshold current and a low operating current can be realized.

The first _dielectric, SiO 2, SiN, may be one of Nb ₂ O _5, ZrO ₂ and Ta ₂ O _5.

  With such a configuration, a dielectric film having the same refractive index can be easily formed with good reproducibility by a vapor deposition method or a sputtering method, so that a semiconductor laser device with a high yield and a low cost can be obtained. Can be realized.

The transparent electrode may include Ni.
With such a configuration, for example, a transparent electrode can be formed of Ni / ITO or Ni / Au, and the contact resistance to the light guide layer made of GaN can be reduced. A semiconductor laser device having an operating current can be realized.

  The present invention also provides a light emitting layer forming step of forming a light emitting layer made of a semiconductor on a first substrate, and a current blocking forming a current blocking layer made of a first dielectric on the light emitting layer. A layer forming step, an opening forming step of forming an opening in the current blocking layer, and a transparent electrode that is transparent to the light of the light emitting layer and functions as a cladding layer in the opening It is also possible to provide a method for manufacturing a semiconductor laser device including an electrode forming step.

  With such a configuration, in the semiconductor laser structure, the cladding layer can be configured by a transparent electrode instead of the epitaxial growth layer, and the layer thickness of the AlGaN layer in the epitaxial growth layer can be reduced, thereby reducing the stress in the layer, Cracks generated during or after epitaxial growth can be reduced. As a result, it becomes difficult to be affected by cracks generated in the AlGaN layer, so that a high yield semiconductor laser device is realized. At the same time, the thickness of the epitaxially grown layer, particularly the growth rate of the AlGaN layer, which is slow and requires a long time for growth, is reduced, so that the crystal growth time is shortened and the manufacturing cost is reduced.

  Here, in the transparent electrode forming step, a transparent electrode made of a conductive oxide and having a refractive index larger than the refractive index of the current blocking layer and smaller than the refractive index of the light emitting layer may be formed. .

  By adopting such a configuration, in the semiconductor laser structure, the cladding layer can be composed of a conductive oxide instead of the epitaxial growth layer, and the thickness of the AlGaN layer in the epitaxial growth layer can be reduced, thereby reducing the stress in the layer. In addition, cracks occurring during or after epitaxial growth can be reduced. As a result, a high yield semiconductor laser device is realized. At the same time, since crystal growth can be performed in a short time, a low-cost semiconductor laser device can be realized.

  The method of manufacturing the semiconductor laser device may further include a second dielectric having a refractive index larger than the refractive index of the current blocking layer and smaller than the refractive index of the light emitting layer in the opening. A dielectric layer forming step of forming a dielectric layer may be included, and in the dielectric layer forming step, the dielectric layer may be formed so as to be positioned above the light emitting layer with the transparent electrode interposed therebetween.

  By adopting such a configuration, in the semiconductor laser structure, the cladding layer can be configured not by an epitaxial growth layer but by a thin transparent electrode and a high refractive index dielectric layer, and the thickness of the AlGaN layer in the epitaxial growth layer can be reduced. Therefore, it is possible to reduce the stress in the layer and reduce the cracks generated during or after the epitaxial growth. As a result, a high yield semiconductor laser device is realized. At the same time, since crystal growth can be performed in a short time, a low-cost semiconductor laser device can be realized. Furthermore, since the dielectric layer having a high refractive index can function as a waveguide, absorption in the waveguide is reduced. As a result, a high-power semiconductor laser device can be realized.

  The semiconductor laser device manufacturing method further includes a first metal film forming step of forming a first metal film above the transparent electrode, and a second metal film forming of forming a second metal film on the second substrate. A step of crimping the first metal film and the second metal film, and a removing step of removing the first substrate. In the crimping process, a direction along the waveguide of the semiconductor laser element May be pressure-bonded so as to be perpendicular to the cleavage plane of the second substrate.

  By adopting such a configuration, for example, a substrate having excellent heat dissipation or cleavage can be obtained by bonding different substrates together by, for example, eutecticization by heating after the first metal film and the second metal film are bonded, and further separating the substrates. Therefore, it is possible to realize a semiconductor laser device having a long lifetime and a low threshold current.

  In the removing step, the first substrate may be removed by separating the first substrate from the semiconductor laser element by irradiating light from the back surface of the first substrate on which the active layer is not formed. Good.

  With such a configuration, a large-area substrate can be separated with good reproducibility, so that it is possible to manufacture a semiconductor laser device that can be easily separated even if it is difficult to separate the substrate by polishing. A method can be realized.

  In the removing step, light may be irradiated using a pulsed laser as a light source.

  With such a configuration, it is possible to increase the output power of light used for substrate separation, and thus it is possible to realize a method of manufacturing a semiconductor laser device that can more easily separate the substrate.

Moreover, in the said removal process, you may irradiate light using the bright line of a mercury lamp as a light source.
With such a configuration, since the spot size of light used for substrate separation can be increased, a method for manufacturing a semiconductor laser device that can shorten the time required for substrate separation can be realized. .

  Further, in the removing step, light may be irradiated so as to scan the back surface of the first substrate.

  With such a configuration, a large-area substrate can be separated without being affected by the beam size of the light source of light used for substrate separation, and thus a semiconductor that can be easily separated. A method for manufacturing a laser element can be realized.

  In the removing step, the first substrate may be removed by polishing the first substrate.

  With such a configuration, it is possible to realize a method of manufacturing a semiconductor laser device that can separate a large-area substrate at low cost.

  In the first metal film forming step or the second metal film forming step, a first metal film or a second metal film containing at least one of Au and AuSn may be formed.

  By adopting such a structure, it is possible to bond different substrates by heating and eutecticizing the metal film. For example, transfer to a substrate excellent in heat dissipation or a substrate excellent in cleavage is possible. Therefore, it is possible to realize a semiconductor laser element having a long lifetime and a low threshold current.

  In the second metal film forming step, the second metal film may be formed on a second substrate made of any one of Si, GaAs, InP, and SiC.

  With such a structure, the substrate to be bonded becomes a substrate having excellent crystallinity and cleavage, so that a semiconductor laser element having a long lifetime and a low threshold current can be realized.

  Moreover, in the said crimping | compression-bonding process, you may crimp | bond so that the direction along the waveguide of the said semiconductor laser element may become parallel to a <110> direction or a <1-100> direction.

  With such a configuration, the flatness of the cleavage plane is improved, so that a semiconductor laser element with a low threshold current can be realized.

  In the light emitting layer forming step, a light emitting layer composed of a compound semiconductor containing nitrogen may be formed.

  With such a configuration, cracks occurring during or after epitaxial growth can be suppressed, and thus a high-yield semiconductor laser device can be realized. In addition, since crystal growth can be performed in a short time, a low-cost semiconductor laser device can be realized.

Further, in the light emitting layer forming step, the light emitting layer may be formed on a first substrate made of any one of sapphire, SiC, GaN, AlN, MgO, LiGaO ₂ and LiAlO ₂ .

  With such a configuration, an epitaxially grown layer having excellent crystallinity can be formed on the substrate, so that a semiconductor laser device having a low threshold current and a low operating current can be realized.

  As is clear from the above description, according to the semiconductor laser device and the manufacturing method thereof according to the present invention, a semiconductor laser device with a high yield can be realized. In addition, a low-cost semiconductor laser element can be realized. In addition, a semiconductor laser element with a low operating current can be realized. In addition, a high-power semiconductor laser device can be realized. In addition, a semiconductor laser device having a low threshold current and a low operating current can be realized. In addition, a long-life semiconductor laser device can be realized.

Generation of kinks in the current-light output characteristics during high output operation can be suppressed, and the design margin for obtaining a stable single transverse mode high output laser device can be increased. In addition, by precisely controlling the refractive index difference, the design margin in the structural design of the self-oscillation type low noise laser element can be increased. Furthermore, since the interface resistance at the regrowth portion can be reduced and the electrode area on the p-type GaN layer can be increased, a semiconductor laser device with low series resistance and low operating voltage is realized. Furthermore, for example, an n-type AlGaN layer is formed below the n-type GaN cladding layer, and a refractive index difference is further provided in the cladding layer, thereby maintaining a high optical confinement coefficient Γ _V perpendicular to the active layer, A structural design that reduces the vertical divergence angle θ _V is possible, and a semiconductor laser element having a low threshold current and high beam utilization efficiency for optical disc applications is realized.

  Hereinafter, a semiconductor laser device and a manufacturing method thereof according to embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a perspective view showing the structure of the blue-violet semiconductor laser device of the first embodiment.

This semiconductor laser element includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, an n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5 as a light emitting layer, an undoped GaN guide layer 6, a p-type. AlGaN electron barrier layer 7, p-type GaN guide layer 8 as a light guide layer, SiO ₂ block layer 9 as a current blocking layer, Ni / ITO clad layer electrode 10 as a transparent electrode, Ti / Au pad electrode 11 and Ti / Au An Al / Ni / Au electrode 12 is provided.

  On the GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, an n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer are formed by an epitaxial growth method using, for example, the MOCVD method. 6, a p-type AlGaN electron barrier layer 7 and a p-type GaN guide layer 8 are sequentially formed. That is, a nitride semiconductor layer is formed on the GaN substrate 1. At this time, 405 nm blue-violet emission is generated from the InGaN multiple quantum well active layer 5 by current injection. The impurity concentration of the p-type GaN guide layer 8 increases in the direction from the InGaN multiple quantum well active layer 5 toward the Ni / ITO clad layer electrode 10.

In the SiO ₂ block layer 9 formed on the p-type GaN guide layer 8, for example, a stripe-shaped opening having a width of 2 μm (the stripe direction is the A direction in FIG. 1) is formed. On the p-type GaN guide layer 8 and the SiO ₂ block layer 9, a Ni / ITO clad layer electrode 10 is formed so as to embed the stripe-shaped opening. A Ti / Au pad electrode 11 is formed on the Ni / ITO clad layer electrode 10, and a Ti / Al / Ni / Au electrode 12 is formed on the back surface of the GaN substrate 1.

The Ni / ITO clad layer electrode 10 functions as an ohmic electrode to the p-type layer. That is, the Ni / ITO clad layer electrode 10 has a resistivity of 10 ⁻⁴ Ωcm or less, and functions as an ohmic electrode to the p-type GaN guide layer 8. For example, the contact resistance of the Ni / ITO clad layer electrode 10 to the p-type GaN guide layer 8 is 10 ⁻³ Ωcm ² or less.

In the Ni / ITO clad layer electrode 10, Ni at the interface diffuses into the surface and changes to NiO due to sintering in an O ₂ atmosphere for reducing contact resistance, so that absorption of light emitted from the active layer is not absorbed. It is small and transmits light from the active layer. Moreover, since the refractive index of ITO at a wavelength of 405 nm is 2.1 and the refractive index of SiO ₂ at a wavelength of 405 nm is 1.46, the refractive index of the Ni / ITO clad layer electrode 10 is SiO ₂ block layer. It is larger than the refractive index of 9. Further, the refractive index of the Ni / ITO clad layer electrode 10 is smaller than about 2.3 which is the refractive index of the InGaN multiple quantum well active layer 5 and close to the refractive index of the InGaN multiple quantum well active layer 5.

In the semiconductor laser device having the above structure, the refractive index of the Ni / ITO cladding layer electrode 10 embedded in a stripe shape in the opening of the SiO ₂ blocking layer 9, the Ni / ITO cladding layer electrode 10 and the SiO ₂ blocking layer 9 The difference functions as a clad layer for confining light in the waveguide of the blue-violet laser, that is, in the waveguide stripe, and light is confined in the Ni / ITO clad layer electrode 10 formed in the opening.

  As a result, the p-type AlGaN cladding layer in the conventional semiconductor laser device is replaced with a polycrystalline or amorphous Ni / ITO cladding layer electrode 10. Therefore, since the thickness of the AlGaN layer in the epitaxial growth layer is reduced, stress in the layer is reduced, and cracks generated during or after the epitaxial growth are reduced. As a result, it becomes difficult to be affected by cracks generated in the AlGaN layer, so that a high yield semiconductor laser device is realized. At the same time, the thickness of the epitaxially grown layer, particularly the growth rate of the AlGaN layer, which is slow and requires a long time for growth, is reduced, so that the crystal growth time is shortened and the manufacturing cost is reduced. Furthermore, since the cladding layer becomes a low resistance layer, the operating voltage is reduced.

As described above, according to the semiconductor laser device of the present embodiment, the stripe-shaped opening is formed in the SiO ₂ block layer on the p-type guide layer, and the p-type cladding layer and the p-type ohmic electrode are formed in the opening. A Ni / ITO clad layer electrode is also formed. Therefore, cracks in the epitaxial growth layer can be reduced, and a high yield can be realized. At the same time, since the epitaxial growth time can be shortened, the cost can be reduced.

In the semiconductor laser device of the present embodiment, the semiconductor laser structure is formed on the GaN substrate. However, in the semiconductor laser structure, as long as a dislocation density of, for example, 10 ⁶ cm ⁻² can be realized, the waveguide stripe is positioned at a low dislocation above the insulating film such as SiO ₂ patterned in a stripe shape. As described above, it may be formed on another substrate by using lateral growth (Epitaxial Lateral Overgrowth: ELOG). Further, the semiconductor laser structure may be formed on, for example, an AlN layer on a sapphire substrate in order to reduce dislocation.

Moreover, the Ni / ITO clad layer electrode comprised from the indium oxide (ITO) to which tin was added, and Ni was illustrated as a transparent electrode which functions as a clad layer and a p-type electrode. However, the absorption with respect to the laser beam (405 nm blue-violet emission) is sufficiently small, and the refractive index is between the refractive index of the material constituting the block layer (SiO ₂ ) and the refractive index of the material constituting the active layer, And if it functions as a favorable ohmic electrode with respect to a p-type layer (p-type GaN layer), it will not be restricted to this, For example, a tin oxide (ATO) to which antimony was added, zinc oxide (ZnO), or a single layer It may be made of a conductive oxide such as ITO. Also in this case, a high yield can be obtained by forming a stripe-shaped opening in the block layer on the p-type GaN guide layer and forming a transparent electrode serving as the p-type cladding layer and the p-type ohmic electrode in the opening. Moreover, cost reduction can be realized.

Although the block layer is made of SiO ₂ , it is not limited to this as long as it is made of a dielectric, and may be made of SiN, Nb ₂ O ₅ , ZrO ₂ or Ta ₂ O ₅ , for example.

  Next, a method for manufacturing a blue-violet semiconductor laser device having the above structure will be described with reference to cross-sectional views shown in FIGS. 2A to 2D.

First, as shown in FIG. 2A, for example, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, an n-type AlGaN clad layer 3 and an n-type AlGaN cladding layer 3 are formed on the (0001) surface of a GaN substrate 1 having a transition density of 10 ⁶ cm ⁻² by MOCVD. A type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer 6, a p-type AlGaN electron barrier layer 7 and a p-type GaN guide layer 8 are formed. At this time, the n-type layer is formed by, for example, Si doping using SiH ₄ gas, and the p-type layer is formed by, for example, Mg doping using Cp ₂ Mg.

Next, as shown in FIG. 2B, SiO _{2 having a} thickness of about 500 nm is formed on the p-type GaN guide layer 8 by, for example, a vapor deposition method (Chemical Vapor Deposition: CVD method) using SiH ₄ gas and O ₂ gas. Block layer 9 is formed. Thereafter, a photoresist having a stripe-shaped opening (stripe width is about 2 μm) is formed on the SiO ₂ block layer 9. Using this photoresist as a mask, reactive ion etching (RIE) using, for example, CF ₄ gas and O ₂ gas is performed to selectively remove a part of the SiO ₂ block layer 9.

Next, as shown in FIG. 2C, the Ni / ITO clad layer electrode 10 is formed on the SiO ₂ blocking layer 9 and the p-type GaN guide layer 8 in the stripe-shaped opening by, for example, electron beam evaporation and lift-off. . Thereafter, sintering is performed, for example, at 600 ° C. in an O ₂ atmosphere in order to reduce the contact resistance of the p-type layer. Because of this sintering, Ni moves as NiO to the vicinity of the surface of the Ni / ITO clad layer electrode 10, so that the internal loss due to light absorption in the clad layer is reduced to a level necessary for laser oscillation. At this time, in order to improve the cleavage and orientation of the Ni / ITO clad layer electrode 10, the Ni / ITO clad layer electrode 10 is formed by an ablation method using an excimer laser called a pulsed laser deposition (PLD). It is desirable to form. Note that a layer having an Mg concentration higher than that inside the p-type GaN guide layer 8 may be formed on the outermost surface of the p-type GaN guide layer 8 in order to reduce contact resistance.

  Next, as shown in FIG. 2D, a Ti / Au pad electrode 11 is formed as a pad electrode to the p-type layer on the Ni / ITO clad layer electrode 10 by, for example, electron beam evaporation and lift-off. Thereafter, the GaN substrate 1 is polished and thinned to 150 μm, for example, and a Ti / Al / Ni / Au electrode 12 is formed on the back surface of the GaN substrate 1 as an ohmic electrode for the n-type layer. Subsequently, the wafer is cleaved in a direction perpendicular to the stripe direction to form a resonator mirror of the semiconductor laser element. As a result, a semiconductor laser device having a structure as shown in FIG. 1 is formed. At this time, in order to improve the flatness of the cleaved surface and form a mirror with high reflectivity, it is better that the orientation of the Ni / ITO clad layer electrode 10 is high.

  As described above, according to the manufacturing method of the semiconductor laser device of the present embodiment, the step of forming the waveguide by dry etching the p-type AlGaN cladding layer in a stripe shape as in the conventional manufacturing method of the semiconductor laser device. Not included. That is, since the step of dry etching the GaN-based semiconductor is not included, a damaged layer is not formed around the waveguide by dry etching, and a leak current due to the damaged layer does not occur. Therefore, it is possible to realize a low operating current semiconductor laser element with little leakage current.

  Further, according to the method for manufacturing a semiconductor laser device of the present embodiment, the p-type guide layer is not determined by the dry etching rate, unlike the conventional method for manufacturing a semiconductor laser device. It is determined only by the epitaxial growth thickness. Control of the layer thickness of the p-type layer on the side surface of the waveguide is very important from the viewpoint of the structural design of the high-power semiconductor laser device. As the light output level (kink level) changes, the beam divergence angle (horizontal divergence angle) in the direction parallel to the joint surface also changes greatly. Therefore, the control of the layer thickness of the p-type layer, which is very important in considering application to an optical disk light source, becomes easy, so that the reproducibility and uniformity of the layer thickness of the p-type layer is improved, and the yield is improved. It is possible to realize a high-power semiconductor laser device capable of

(Second Embodiment)
FIG. 3 is a perspective view showing the structure of the blue-violet semiconductor laser device of the second embodiment.

This semiconductor laser device includes a sapphire substrate 13, an n-type GaN layer 2, an SiO ₂ mask 14, an n-type AlGaN cladding layer 3, an n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer 6, p Type AlGaN electron barrier layer 7, p-type GaN guide layer 8, SiO ₂ blocking layer 9, Ni / ITO thin film electrode 16 as a transparent electrode, Nb ₂ O ₅ cladding layer 15 as a dielectric layer, Ti / Au pad electrode 11 And a Ti / Al / Ni / Au electrode 12.

  On the sapphire substrate 13, for example, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, an n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer by an epitaxial growth method using MOCVD or the like. 6. A p-type AlGaN electron barrier layer 7 and a p-type GaN guide layer 8 are sequentially formed. At this time, 405 nm blue-violet emission is generated from the InGaN multiple quantum well active layer 5 by current injection. The impurity concentration of the p-type GaN guide layer 8 increases in the direction from the InGaN multiple quantum well active layer 5 toward the Ni / ITO thin film electrode 16.

In the n-type GaN layer 2, a striped SiO ₂ mask 14 having a mask width of, for example, 10 μm is formed. The SiO ₂ mask 14 is formed by forming a part of the n-type GaN layer 2 on the sapphire substrate 13, forming the SiO ₂ mask 14 thereon, and then covering the SiO ₂ mask 14 with the n-type GaN layer 2. The remaining n-type GaN layer 2 is formed by lateral growth on a part of the substrate. In the epitaxial growth layer above the SiO ₂ mask 14, the dislocation density is in the order of 10 ⁶ cm ⁻² , and is reduced from the dislocation density of 10 ⁹ cm ^{−2 in} the other epitaxial growth layers.

In the SiO ₂ block layer 9 formed on the p-type GaN guide layer 8, for example, openings having a stripe shape with a width of 5 μm (the stripe direction is the A direction in FIG. 3) are formed. The stripe-shaped opening of the SiO ₂ block layer 9 is located above the SiO ₂ mask 14 and the waveguide is formed in a portion having a low dislocation density. An Nb ₂ O ₅ cladding layer 15 and a Ni / ITO thin film electrode 16 are selectively formed on the p-type GaN guide layer 8 and the SiO ₂ block layer 9 so as to fill the stripe-shaped opening. A Ti / Au pad electrode 11 is formed as a p-type layer pad electrode on the Nb ₂ O ₅ cladding layer 15 so as to be in contact with the Ni / ITO thin film electrode 16. The Nb ₂ O ₅ cladding layer 15 is formed on the p-type GaN guide layer 8 via the Ni / ITO thin film electrode 16. The Ti / Al / Ni / Au electrode 12 as an n-type electrode is formed on the surface of the n-type GaN layer 2 exposed by selectively removing a part of the epitaxial growth layer and the SiO ₂ block layer 9. Yes.

The Ni / ITO thin film electrode 16 functions as an ohmic electrode to the p-type layer. That is, the Ni / ITO thin film electrode 16 functions as an ohmic electrode to the p-type GaN guide layer 8. For example, the contact resistance of the Ni / ITO thin film electrode 16 to the p-type GaN guide layer 8 is 10 ⁻³ Ωcm ² or less.

  Here, since the film thickness of the Ni / ITO thin film electrode 16 is, for example, about 10 nm or less, the light absorption from the active layer is small, and the light from the active layer is transmitted.

Further, since the refractive index of the SiO ₂ blocking layer 9 at the wavelength of 405 nm is 1.46 and the refractive index of the Nb ₂ O ₅ cladding layer 15 at the wavelength of 405 nm is 2.1, the Nb ₂ O ₅ cladding layer 15 Is larger than the refractive index of the SiO ₂ block layer 9. Further, the refractive index of the Nb ₂ O ₅ cladding layer 15 is smaller than about 2.3 which is the refractive index of the InGaN multiple quantum well active layer 5 and close to the refractive index of the InGaN multiple quantum well active layer 5.

In the semiconductor laser device having the above-described structure, the Nb ₂ O ₅ cladding layer 15 and the Ni / ITO thin film electrode 16 embedded in the stripe-shaped opening of the SiO ₂ blocking layer 9 include the Nb ₂ O ₅ cladding layer 15 and the SiO ₂ Due to the difference in refractive index with the block layer 9, it functions as a waveguide of blue-violet laser, that is, a cladding layer that confines light in the waveguide stripe, and the Nb ₂ O ₅ cladding layer 15 and Ni / ITO formed in this opening Light is confined in the thin film electrode 16.

As a result, the p-type AlGaN cladding layer in the conventional semiconductor laser device is replaced with the amorphous Nb ₂ O ₅ cladding layer 15 and the Ni / ITO thin film electrode 16. Therefore, since the thickness of the AlGaN layer in the epitaxial growth layer is reduced, stress in the layer is reduced, and cracks generated during or after the epitaxial growth are reduced. As a result, it becomes difficult to be affected by cracks generated in the AlGaN layer, so that a high yield semiconductor laser device is realized. At the same time, the thickness of the epitaxially grown layer, particularly the growth rate of the AlGaN layer, which is slow and requires a long time for growth, is reduced, so that the crystal growth time is shortened and the manufacturing cost is reduced. Furthermore, since a part of the cladding layer becomes a low resistance layer, the operating voltage is reduced.

As described above, according to the semiconductor laser device of the present embodiment, the stripe-shaped opening is formed in the SiO ₂ block layer on the p-type guide layer, and the Nb ₂ O ₅ cladding layer and Ni / An ITO thin film electrode is formed. Therefore, cracks in the epitaxial growth layer can be reduced, and a high yield can be realized. At the same time, the thickness of the epitaxial growth layer can be reduced and the growth time can be shortened, resulting in a reduction in cost.

Further, according to the semiconductor laser device of the present embodiment, the Nb ₂ O ₅ cladding layer 15 functions as a cladding layer. Therefore, light absorption in the waveguide can be reduced as compared with the semiconductor laser element of the first embodiment, so that a high-power semiconductor laser element can be realized.

Further, according to the semiconductor laser device of the present embodiment, the stripe-shaped opening of the SiO ₂ block layer 9 is located above the SiO ₂ mask 14. Therefore, since the active layer and the waveguide are formed in a portion where the dislocation density is small, a long-life semiconductor laser device can be realized.

In the semiconductor laser device of the present embodiment, the semiconductor laser structure is formed on the sapphire substrate by lateral growth so that the waveguide stripe is located in the portion where the dislocation is lowered. However, the semiconductor laser structure may be formed on the GaN substrate as long as a dislocation density of, for example, 10 ⁶ cm ⁻² can be realized. Further, the semiconductor laser structure may be formed on, for example, an AlN layer on a sapphire substrate in order to reduce dislocation.

Further, as the dielectric layer serving as a cladding layer, and exemplified Nb ₂ O ₅ cladding layer. However, if the absorption with respect to laser light (405 nm blue-violet emission) is sufficiently small and the refractive index is between the refractive index of the material constituting the block layer (SiO ₂ ) and the refractive index of the material constituting the active layer, The dielectric layer is not limited to this, and the dielectric layer may be made of a dielectric such as SiN, ZrO ₂ , TiO _2, or Ta ₂ O ₅ . Similarly, a Ni / ITO thin film electrode was exemplified as a transparent electrode functioning as a cladding layer and a p-type electrode. However, if the absorption with respect to laser light (405 nm blue-violet emission) is sufficiently small and functions as a good ohmic electrode for the p-type layer (p-type GaN layer), the transparent electrode is not limited to this, for example, ATO, You may comprise from ZnO or single layer ITO.

  Next, a method for manufacturing the blue-violet semiconductor laser device having the above structure will be described with reference to cross-sectional views shown in FIGS. 4A to 4F.

First, as shown in FIG. 4A, the n-type GaN layer 2 is formed on the (0001) plane of the sapphire substrate 13 by MOCVD or the like, for example. Thereafter, an SiO ₂ mask 14 having a thickness of about 100 nm is formed on the n-type GaN layer 2 by, for example, a CVD method using SiH ₄ gas and O ₂ gas. Subsequently, a stripe-shaped opening having a width of about 5 μm is formed in the SiO ₂ mask 14 by selective etching using, for example, a hydrogen fluoride (HF) aqueous solution using a photoresist as a mask, and a stripe-shaped having a width of about 10 μm. The SiO ₂ mask 14 is formed.

Next, as shown in FIG. 4B, the n-type GaN layer 2 and the n-type AlGaN cladding layer are grown by, for example, MOCVD so that the growth occurs from the n-type GaN layer 2 exposed at the opening of the SiO ₂ mask 14. 3. An n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer 6, a p-type AlGaN electron barrier layer 7 and a p-type GaN guide layer 8 are formed. In this crystal growth, the crystal growth so as to laterally grown on the SiO ₂ mask 14 is made, the threading dislocation density in the epitaxial growth layer which is located above the SiO ₂ mask 14 is greatly reduced, resulting in 10 ⁶ cm -Dislocation density of ² units. At this time, the n-type layer is formed by, for example, Si doping using SiH ₄ gas, and the p-type layer is formed by, for example, Mg doping using Cp ₂ Mg.

Next, as shown in FIG. 4C, an SiO ₂ blocking layer 9 having a thickness of about 500 nm is formed on the p-type GaN guide layer 8 by the CVD method. Thereafter, a photoresist having a stripe-shaped opening (stripe width is about 2 μm) is formed on the SiO ₂ block layer 9. Using this photoresist as a mask, for example, RIE is performed to selectively remove a part of the SiO ₂ block layer 9.

Next, as shown in FIG. 4D, a Ni / ITO thin film as a p-type ohmic electrode is formed on the SiO ₂ blocking layer 9 and the p-type GaN guide layer 8 in the stripe-shaped opening by, for example, electron beam evaporation and lift-off. The electrode 16 is formed. Thereafter, the striped Nb ₂ O ₅ cladding layer 15 is formed on the Ni / ITO thin film electrode 16 so that at least a part is formed in the striped opening of the SiO ₂ blocking layer 9 by, for example, electron beam evaporation and lift-off. Form. At this time, in order to reduce the contact resistance of the p-type layer, after the Ni / ITO thin film electrode 16 or the Nb ₂ O ₅ cladding layer 15 is formed, sintering is performed in an O ₂ atmosphere at 600 ° C., for example. By this sintering, Ni moves as NiO to the vicinity of the surface of the Ni / ITO thin film electrode 16, so that the internal loss due to light absorption in the cladding layer is reduced to a level necessary for laser oscillation. Note that a layer having an Mg concentration higher than that inside the p-type GaN guide layer 8 may be formed on the outermost surface of the p-type GaN guide layer 8 in order to reduce contact resistance.

Next, as shown in FIG. 4E, the epitaxial growth layer and the SiO ₂ block layer 9 are formed by using dry etching such as ICP (Inductive Coupled Plasma) etching so that the surface of the n-type GaN layer 2 is exposed. Selectively remove some. Here, the surface of the n-type GaN layer 2 is exposed in a form having an opening parallel to the opening pattern of the SiO ₂ blocking layer 9 which is a waveguide stripe.

Next, as shown in FIG. 4F, for example, by electron beam evaporation and lift-off, the Nb ₂ O ₅ cladding layer 15 is covered, and on the Nb ₂ O ₅ cladding layer 15 so as to be in contact with the Ni / ITO thin film electrode 16, p A Ti / Au pad electrode 11 is formed as a pad electrode of the mold layer. Thereafter, a Ti / Al / Ni / Au electrode 12 and a Ti / Au pad electrode 11 are formed on the n-type GaN layer 2 by, for example, electron beam evaporation and lift-off. As a result, a semiconductor laser device having a structure as shown in FIG. 3 is formed. At this time, in order to improve the flatness of the cleaved surface and form a mirror with high reflectivity, it is better that the orientation of the Nb ₂ O ₅ cladding layer 15 is high, and the Nb ₂ O ₅ cladding is produced by a method such as PLD. It is desirable to form layer 15.

  As described above, according to the manufacturing method of the semiconductor laser device of the present embodiment, the step of forming the waveguide by dry etching the p-type AlGaN cladding layer in a stripe shape as in the conventional manufacturing method of the semiconductor laser device. Not included. That is, since the step of dry etching the GaN-based semiconductor is not included, a damaged layer is not formed around the waveguide by dry etching, and a leak current due to the damaged layer does not occur. Therefore, it is possible to realize a low operating current semiconductor laser element with little leakage current.

  Further, according to the method for manufacturing a semiconductor laser device of the present embodiment, the p-type guide layer is not determined by the dry etching rate, unlike the conventional method for manufacturing a semiconductor laser device. It is determined only by the epitaxial growth thickness. Therefore, a stable kink level and a stable horizontal divergence angle in the current-light characteristics can be obtained, so that a high-power semiconductor laser device capable of improving the yield can be realized.

(Third embodiment)
FIG. 5 is a perspective view showing the structure of the blue-violet semiconductor laser device of the third embodiment.

This semiconductor laser device includes an n-type GaN layer 2, an n-type AlGaN cladding layer 3, an n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer 6, a p-type AlGaN electron barrier layer 7, and a p-type. GaN guide layer 8, SiO ₂ block layer 9, Ni / ITO clad layer electrode 10, Ti / Au electrode 30 as metal film, Ti / Al / Ni / Au electrode 12, Au / AuSn / Au / Ni as metal film An electrode 17, a low resistance SiC substrate 18 and a Ni / Au electrode 19 are provided.

  On the n-type GaN layer 2, an n-type AlGaN cladding layer 3, an n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer 6, a p-type AlGaN electron barrier layer 7, and a p-type GaN guide layer 8 are sequentially formed. At this time, 405 nm blue-violet emission is generated from the InGaN multiple quantum well active layer 5 by current injection.

The SiO ₂ block layer 9 formed on the p-type GaN guide layer 8 has openings in a stripe shape (the stripe direction is the A direction in FIG. 5). On the p-type GaN guide layer 8 and the SiO ₂ block layer 9, a Ni / ITO clad layer electrode 10 is formed so as to embed the stripe-shaped opening. A Ti / Au electrode 30 is formed on the Ni / ITO clad layer electrode 10 and the SiO ₂ block layer 9, and an Au / AuSn / Au / Ni electrode 17 and a low resistance are formed on the Ti / Au electrode 30. A Ni / Au electrode 19 that functions as an ohmic electrode to the SiC substrate 18 and the p-type layer is sequentially formed. A Ti / Al / Ni / Au electrode 12 that functions as an ohmic electrode to the n-type layer is formed on the n-type GaN layer 2.

  The Ni / ITO clad layer electrode 10 functions as an ohmic electrode to the p-type layer. That is, the Ni / ITO clad layer electrode 10 functions as an ohmic electrode to the p-type GaN guide layer 8.

  Here, the epitaxial growth layer is a low-resistance SiC substrate through the Ti / Au electrode 30 and the Au / AuSn / Au / Ni electrode 17 so that the cleavage direction of the epitaxial growth layer coincides with the cleavage direction of the low-resistance SiC substrate 18. After being bonded to 18, it is separated from, for example, a sapphire substrate used for crystal growth. At this time, the epitaxial growth layer and the low-resistance SiC substrate 18 are bonded so that the cleavage plane of the low-resistance SiC substrate 18 is perpendicular to the stripe direction, that is, along the waveguide of the semiconductor laser element (resonator direction).

In the semiconductor laser device having the above structure, the refractive index of the Ni / ITO cladding layer electrode 10 embedded in a stripe shape in the opening of the SiO ₂ blocking layer 9, the Ni / ITO cladding layer electrode 10 and the SiO ₂ blocking layer 9 The difference functions as a clad layer for confining light in the waveguide of the blue-violet laser, that is, in the waveguide stripe, and light is confined in the Ni / ITO clad layer electrode 10 formed in the opening.

  As a result, the thickness of the AlGaN layer in the epitaxial growth layer is reduced as in the semiconductor laser device of the first embodiment, so that cracks occurring during or after the epitaxial growth are reduced, and a semiconductor laser device with a high yield is realized. Is done. At the same time, the thickness of the epitaxially grown layer, particularly the growth rate of the AlGaN layer, which is slow and requires a long time for growth, is reduced, so that the crystal growth time is shortened and the manufacturing cost is reduced. Furthermore, since the cladding layer becomes a low resistance layer, the operating voltage is reduced. Furthermore, since the Ni / ITO clad layer electrode 10 is sandwiched between the low resistance SiC substrate 18 and the epitaxial growth layer, and the cleavage planes of the epitaxial growth layer and the low resistance SiC substrate 18 match, a flat resonator mirror is formed. Therefore, it becomes possible to realize a semiconductor laser device with a low threshold current.

As described above, according to the semiconductor laser device of the present embodiment, the Ni / ITO clad that functions as a cladding layer is formed in the SiO ₂ block layer on the p-type guide layer in the stripe-shaped opening. A layer electrode is formed. Therefore, cracks in the epitaxial growth layer can be reduced, and a high yield can be realized. At the same time, the thickness of the epitaxial growth layer can be reduced and the growth time can be shortened, resulting in a reduction in cost.

  In addition, according to the semiconductor laser device of the present embodiment, the epitaxial growth layer is bonded to the SiC substrate so that the cleavage planes coincide. Therefore, even in the semiconductor laser device of the present embodiment including a layer that is difficult to cleave, such as a Ni / ITO clad layer electrode, it is possible to realize a semiconductor laser device that is excellent in cleavage and has a low threshold current.

  Moreover, according to the semiconductor laser device of the present embodiment, the SiC substrate is provided. Therefore, it is possible to realize a long-life semiconductor laser device with excellent heat dissipation.

In addition, the Ni / ITO clad layer electrode was illustrated as a transparent electrode which functions as a clad layer and a p-type electrode. However, the absorption with respect to the laser beam (405 nm blue-violet emission) is sufficiently small, and the refractive index is between the refractive index of the material constituting the block layer (SiO ₂ ) and the refractive index of the material constituting the active layer, And if it functions as a favorable ohmic electrode with respect to a p-type layer (p-type GaN layer), it will not be restricted to this, For example, even if a transparent electrode is comprised from electroconductive oxides, such as ATO, ZnO, or single layer ITO. Good. Further, the SiC substrate is exemplified as the substrate on which the epitaxial growth layer is bonded. However, the substrate is not limited to this as long as it has good heat dissipation and cleavage, and the substrate to which the epitaxial growth layer is bonded may be, for example, an InP substrate, a Si substrate, or a GaAs substrate.

  Further, the Ti / Au electrode 30 and the Au / AuSn / Au / Ni electrode 17 are exemplified as the metal film for bonding the low-resistance SiC substrate 18 and the epitaxial growth layer, but the metal film containing Au and AuSn is not limited thereto. I can't.

  Next, a method for manufacturing the blue-violet semiconductor laser device having the above structure will be described with reference to cross-sectional views shown in FIGS. 6A to 6G.

First, as shown in FIG. 6A, an n-type GaN layer 2 is formed on the (0001) surface of a sapphire substrate by MOCVD or the like, for example, as in the method of manufacturing the semiconductor laser device of the second embodiment. . Thereafter, a striped SiO ₂ mask 14 having a width of about 10 μm and a thickness of about 100 μm is formed on the n-type GaN layer 2 by CVD and wet etching.

Next, as shown in FIG. 6B, the n-type GaN layer 2 and the n-type AlGaN cladding layer are grown by, for example, MOCVD so that the growth occurs from the n-type GaN layer 2 exposed at the opening of the SiO ₂ mask 14. 3. An n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped GaN guide layer 6, a p-type AlGaN electron barrier layer 7 and a p-type GaN guide layer 8 are formed. In this crystal growth, the crystal growth so as to laterally grown on the SiO ₂ mask 14 is made, the threading dislocation density in the epitaxial growth layer which is located above the SiO ₂ mask 14 is greatly reduced, resulting in 10 ⁶ cm -Dislocation density of ² units. At this time, the n-type layer is formed by, for example, Si doping using SiH ₄ gas, and the p-type layer is formed by, for example, Mg doping using Cp ₂ Mg.

Next, as shown in FIG. 6C, an SiO ₂ blocking layer 9 having a thickness of about 500 nm is formed on the p-type GaN guide layer 8 by the CVD method. Thereafter, for example, RIE is performed to form a stripe-shaped opening (stripe width is about 2 μm) in the SiO ₂ block layer 9. Subsequently, the Ni / ITO clad layer electrode 10 is formed on the SiO ₂ blocking layer 9 and the p-type GaN guide layer 8 in the stripe-shaped opening by, for example, electron beam evaporation and lift-off. At this time, sintering is performed, for example, in an O ₂ atmosphere at 600 ° C. in order to reduce the contact resistance of the p-type layer.

  Next, as shown in FIG. 6D, a Ti / Au electrode 30 is formed on the Ni / ITO clad layer electrode 10 by, for example, electron beam evaporation. Thereafter, an Au / AuSn / Au / Ni electrode 17 is formed on the (0001) surface of the low-resistance SiC substrate 18 by, for example, vacuum deposition. Subsequently, the substrates are bonded by applying a weight, for example, at 370 ° C. so that Au on the low resistance SiC substrate 18 and Au on the Ni / ITO clad layer electrode 10 are in contact with each other. At this time, bonding is performed so that the <11-20> direction, the <110> direction, or the <1-100> direction, which are cleavage directions, coincide.

  Next, as shown in FIG. 6E, a KrF excimer laser (wavelength 248 nm) is irradiated from the back surface of the sapphire substrate 13 on which no epitaxial growth layer is formed so as to scan the substrate surface. At this time, the irradiated laser light is not absorbed by the sapphire substrate 13 but is absorbed only by the n-type GaN layer 2. Therefore, local heat generation occurs, and the GaN bond is decomposed near the interface between the sapphire substrate 13 and the n-type GaN layer 2. As a result, the fire substrate 13 is separated and removed, and an epitaxially grown layer bonded to the low resistance SiC substrate 18 is obtained. As a light source used for separating the sapphire substrate 13, a third harmonic (wavelength 355 nm) of a pulsed YAG laser may be used instead of a pulsed KrF excimer laser (wavelength 248 nm). A mercury lamp emission line (wavelength 365 nm) may be used.

Next, as shown in FIG. 6F, a part of the n-type GaN layer 2 and the SiO ₂ mask 14 are removed by polishing.

  Next, as shown in FIG. 6G, a Ti / Al / Ni / Au electrode 12 is formed on the n-type GaN layer 2 exposed by polishing, for example, by electron beam evaporation. As a result, a semiconductor laser device having a structure as shown in FIG. 5 is formed.

  As described above, according to the manufacturing method of the semiconductor laser device of the present embodiment, the step of forming the waveguide by dry etching the p-type AlGaN cladding layer in a stripe shape as in the conventional manufacturing method of the semiconductor laser device. Not included. That is, since the step of dry etching the GaN-based semiconductor is not included, a damaged layer is not formed around the waveguide by dry etching, and a leak current due to the damaged layer does not occur. Therefore, it is possible to realize a low operating current semiconductor laser element with little leakage current.

  The semiconductor laser device and the manufacturing method thereof according to the present invention have been described above based on the embodiment. However, the present invention is not limited to this embodiment, and various modifications can be made without departing from the scope of the present invention. It goes without saying that variations or modifications of the above are possible.

For example, the GaN substrate and the sapphire substrate may have any plane orientation, and may have a plane orientation with an off-angle from a representative plane such as the (0001) plane. The substrate may be a SiC substrate, ZnO substrate, Si substrate, GaAs substrate, GaP substrate, InP substrate, LiGaO ₂ substrate, AlN substrate, MgO substrate, LiAlO ₂ substrate, or a mixed crystal thereof. In addition, the epitaxial growth layer may have any composition ratio as long as desired laser characteristics can be realized, may include any multilayer structure, and is not MOCVD, for example, molecular beam epitaxy (MBE) or A layer formed by a crystal growth method such as a hydride vapor phase epitaxy (HVPE) may be included. The epitaxial growth layer may contain a Group 5 element such as As and P or a Group 3 element such as B as a constituent element. Further, the method of forming a dielectric film such as ITO or Nb ₂ O ₅ constituting the waveguide is not limited to electron beam evaporation or PLD, but may be a method such as RF sputtering or ion beam sputtering.

  INDUSTRIAL APPLICABILITY The present invention can be used for a semiconductor laser device and a manufacturing method thereof, and in particular, can be used for a high-power or low-noise blue-violet semiconductor laser device as a writing and reading light source for a high density optical disk.

It is a perspective view which shows the structure of the blue-violet semiconductor laser element of the 1st Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is a perspective view which shows the structure of the blue-violet semiconductor laser element of the 2nd Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is a perspective view which shows the structure of the blue-violet semiconductor laser element of the 3rd Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing for demonstrating the manufacturing method of the semiconductor laser element. It is sectional drawing which shows the structure of the conventional blue-violet semiconductor laser element.

Explanation of symbols

1 GaN substrate 2 n-type GaN layer 3 n-type AlGaN cladding layer 4 n-type GaN guide layer 5 InGaN multiple quantum well active layer 6 undoped GaN guide layer 7 p-type AlGaN electron barrier layer 8 p-type GaN guide layer 9 SiO ₂ block layer 10, 16 Ni / ITO thin film electrode 11 Ti / Au pad electrode 12 Ti / Al / Ni / Au electrode 13 Sapphire substrate 14 SiO ₂ mask 15 Nb ₂ O ₅ cladding layer 17 Au / AuSn / Au / Ni electrode 18 Low resistance SiC Substrate 19, 21 Ni / Au electrode 20 p-type AlGaN cladding layer 22 SiO ₂ passivation film 23 p-type GaN contact layer 30 Ti / Au electrode

Claims (28)

A light emitting layer composed of a semiconductor;
A current blocking layer located above the light emitting layer, having an opening, and comprising a first dielectric;
A transparent electrode formed in the opening, transparent to the light of the light emitting layer, and functioning as a cladding layer ;
A dielectric layer formed in the opening and composed of a second dielectric,
The semiconductor layer is located above the light emitting layer with the transparent electrode interposed therebetween, and has a refractive index larger than the refractive index of the current blocking layer and smaller than the refractive index of the light emitting layer. Laser element. 2. The semiconductor laser according to claim 1, wherein the transparent electrode is made of a conductive oxide and has a refractive index larger than a refractive index of the current blocking layer and smaller than a refractive index of the light emitting layer. element. 3. The semiconductor laser device according to claim 2, wherein the conductive oxide is any one of indium oxide to which tin is added, tin oxide to which antimony is added, and zinc oxide. 2. The semiconductor laser device according to claim 1 , wherein the second dielectric is one of SiN, Nb ₂ O ₅ , ZrO ₂ , TiO _2, and Ta ₂ O ₅ . 2. The semiconductor laser device according to claim 1, further comprising a p-type light guide layer made of a semiconductor and positioned between the light emitting layer and the current blocking layer and in contact with the transparent electrode. The semiconductor laser device described. The semiconductor laser device according to claim 5 , wherein an impurity concentration of the light guide layer increases in a direction from the light emitting layer toward the transparent electrode. The semiconductor laser device according to claim 5 , wherein the light guide layer is made of a semiconductor to which Mg is added. The semiconductor laser element further includes:
A metal film located above the transparent electrode;
A first substrate located above the metal film,
The semiconductor laser device according to claim 1, wherein the first substrate has a cleavage plane perpendicular to a direction along a waveguide of the semiconductor laser device. The semiconductor laser device according to claim 8 , wherein the metal film includes at least one of Au and AuSn. The semiconductor laser device according to claim 8 , wherein the first substrate is made of any one of Si, GaAs, InP, and SiC. The semiconductor laser device according to claim 8 , wherein the cleavage plane of the first substrate is parallel to a <110> direction or a <1-100> direction. The semiconductor laser device according to claim 1, wherein the light emitting layer is made of a compound semiconductor containing nitrogen. The semiconductor laser element further includes a second substrate on which the light emitting layer is formed,
2. The semiconductor laser device according to claim 1, wherein the second substrate is made of any one of sapphire, SiC, GaN, AlN, MgO, LiGaO _2, and LiAlO ₂ . _2. The semiconductor laser device according to claim 1, wherein the first dielectric is any one of SiO ₂ , SiN, Nb ₂ O ₅ , ZrO _2, and Ta ₂ O ₅ . The semiconductor laser device according to claim 1, wherein the transparent electrode includes Ni. A light emitting layer forming step of forming a light emitting layer composed of a semiconductor on the first substrate;
A current blocking layer forming step of forming a current blocking layer made of a first dielectric material on the light emitting layer;
An opening forming step of forming an opening in the current blocking layer;
In the opening, a transparent electrode forming step of forming a transparent electrode that is transparent to the light of the light emitting layer and functions as a cladding layer ;
Forming a dielectric layer formed of a second dielectric material having a refractive index larger than the refractive index of the current blocking layer and smaller than the refractive index of the light-emitting layer in the opening; Including
In the dielectric layer forming step, a dielectric layer is formed so as to be positioned above the light emitting layer with the transparent electrode interposed therebetween . In the transparent electrode forming step, a transparent electrode made of a conductive oxide and having a refractive index larger than the refractive index of the current blocking layer and smaller than the refractive index of the light emitting layer is formed. Item 17. A method for manufacturing a semiconductor laser device according to Item 16 . The method for manufacturing the semiconductor laser device further includes:
A first metal film forming step of forming a first metal film above the transparent electrode;
A second metal film forming step of forming a second metal film on the second substrate;
A crimping step of crimping the first metal film and the second metal film;
Removing the first substrate; and
The method of manufacturing a semiconductor laser device according to claim 16 , wherein in the pressing step, the bonding is performed so that a direction along the waveguide of the semiconductor laser device is perpendicular to a cleavage plane of the second substrate. In the removing step, the first substrate is removed by separating the first substrate from the semiconductor laser element by irradiating light from the back surface of the first substrate on which the active layer is not formed. The method for manufacturing a semiconductor laser device according to claim 18 . 20. The method of manufacturing a semiconductor laser device according to claim 19 , wherein in the removing step, light is emitted using a laser that oscillates in a pulse shape as a light source. 20. The method of manufacturing a semiconductor laser device according to claim 19 , wherein, in the removing step, light is emitted using a bright line of a mercury lamp as a light source. The method for manufacturing a semiconductor laser device according to claim 19 , wherein, in the removing step, light is irradiated so as to scan the back surface of the first substrate. The method of manufacturing a semiconductor laser device according to claim 18 , wherein, in the removing step, the first substrate is removed by polishing the first substrate. 19. The semiconductor according to claim 18 , wherein in the first metal film forming step or the second metal film forming step, a first metal film or a second metal film containing at least one of Au and AuSn is formed. A method for manufacturing a laser element. 19. The semiconductor according to claim 18 , wherein, in the second metal film forming step, the second metal film is formed on a second substrate composed of any one of Si, GaAs, InP, and SiC. A method for manufacturing a laser element. 19. The semiconductor laser device according to claim 18 , wherein in the crimping step, the semiconductor laser device is crimped so that a direction along the waveguide of the semiconductor laser device is parallel to a <110> direction or a <1-100> direction. Production method. The method for manufacturing a semiconductor laser device according to claim 16 , wherein, in the light emitting layer forming step, a light emitting layer composed of a compound semiconductor containing nitrogen is formed. In the light-emitting layer forming step, claim characterized sapphire, SiC, GaN, AlN, MgO, to form a light emitting layer on a first substrate constituted by any of the LiGaO ₂ and LiAlO ₂ 16 The manufacturing method of the semiconductor laser element as described in any one of.

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